Биполярный транзистор 2N3773 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N3773
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 150 W
Макcимально допустимое напряжение коллектор-база (Ucb): 160 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 160 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 16 A
Предельная температура PN-перехода (Tj): 200 °C
Граничная частота коэффициента передачи тока (ft): 0.2 MHz
Статический коэффициент передачи тока (hfe): 15
Корпус транзистора: TO4AA
2N3773 Datasheet (PDF)
0.1. 2n3773 2n6609.pdf 
Size:205K _motorola
Order this documentMOTOROLAby 2N3773/DSEMICONDUCTOR TECHNICAL DATANPN2N3773*Complementary Silicon PowerPNP2N6609TransistorsThe 2N3773 and 2N6609 are PowerBase power transistors de
0.2. 2n3773.pdf Size:83K _st
2N3773High power NPN transistorFeatures High power dissipation Low collector-emitter saturation voltageDescriptionThe device is a planar NPN transistor mounted in 1TO-3 metal case. It is intended for linear 2amplifiers and inductive switching applications.TO-3Figure 1. Internal schematic diagramTable 1. Device summaryOrder code Marking Package Packaging2N3773
0.3. 2n3773 2n6609.pdf Size:80K _central
TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com
0.4. 2n3773 2n6609.pdf Size:93K _onsemi
NPN 2N3773*, PNP 2N6609Preferred DeviceComplementary SiliconPower TransistorsThe 2N3773 and 2N6609 are PowerBaset power transistorsdesigned for high power audio, disk head positioners and other linearapplications. These devices can also be used in power switchinghttp://onsemi.comcircuits such as relay or solenoid drivers, DC-DC converters orinverters.16 A COMPLEMENTARYFeat
0.5. 2n3773g.pdf Size:126K _onsemi
2N3773NPN Power TransistorsThe 2N3773 is a PowerBaset power transistor designed for highpower audio, disk head positioners and other linear applications. Thisdevice can also be used in power switching circuits such as relay orsolenoid drivers, DC-DC converters or inverters.http://onsemi.comFeatures High Safe Operating Area (100% Tested) 150 W @ 100 V16 A NPN Completely
0.6. 2n3773.pdf Size:32K _utc
UTC 2N3773/2N6099 P O W E R TRANSISTORCOMPLEMENTARY SILICONTRANSISTORS The 2N3773/2N6099 are power-base power transistorsdesigned for high power audio, disk head positions andother linear applications. These device can be used inpower switching circuits such as relay or solened drivers,DC to DC converters or inverts.FEATURES*High safe operating area(100 tested) 150W and 100V
0.7. 2n3773.pdf Size:214K _cdil
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company2N3773NPN SILICON PLANAR POWER TRANSISTORTO-3Metal Can PackageComplementary 2N6609General Purpose Amplifier specially suited for Power Conditioning ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL UNITSVALUECollector Base Voltage VCBO 160 VCollector Emitter Voltage VCEO V140
0.8. 2n3773.pdf Size:172K _jmnic
Product Specification www.jmnic.comSilicon NPN Power Transistors 2N3773 DESCRIPTION With TO-3 package Complement to type 2N6609 High DC current gain Low saturation voltage High safe operating area APPLICATIONS Designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as
0.9. 2n3773.pdf Size:192K _inchange_semiconductor
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N3773DESCRIPTIONExcellent Safe Operating AreaHigh DC Current Gain-h =15(Min)@I = 8AFE CLow Saturation Voltage-: V )= 1.4V(Max)@ I = 8ACE(sat CComplement to Type 2N6609100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for high
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
