2N3773 Datasheet. Equivalente

 ..1. Size:205K  motorola
 2n3773 2n6609.pdf

Order this document MOTOROLA by 2N3773/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3773* Complementary Silicon Power PNP 2N6609 Transistors The 2N3773 and 2N6609 are PowerBase power transistors designed for high *Motorola Preferred Device power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid d

 ..2. Size:83K  st
 2n3773.pdf

2N3773 High power NPN transistor Features High power dissipation Low collector-emitter saturation voltage Description The device is a planar NPN transistor mounted in 1 TO-3 metal case. It is intended for linear 2 amplifiers and inductive switching applications. TO-3 Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking Package Packaging 2N3773

 ..3. Size:80K  central
 2n3773 2n6609.pdf

TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 www.centralsemi.com

 ..4. Size:93K  onsemi
 2n3773 2n6609.pdf

NPN 2N3773*, PNP 2N6609 Preferred Device Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBaset power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching http //onsemi.com circuits such as relay or solenoid drivers, DC-DC converters or inverters. 16 A COMPLEMENTARY Feat

 ..5. Size:32K  utc
 2n3773.pdf

UTC 2N3773/2N6099 P O W E R TRANSISTOR COMPLEMENTARY SILICON TRANSISTORS The 2N3773/2N6099 are power-base power transistors designed for high power audio, disk head positions and other linear applications. These device can be used in power switching circuits such as relay or solened drivers, DC to DC converters or inverts. FEATURES *High safe operating area(100 tested) 150W and 100V

 ..6. Size:214K  cdil
 2n3773.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3773 NPN SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package Complementary 2N6609 General Purpose Amplifier specially suited for Power Conditioning Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL UNITS VALUE Collector Base Voltage VCBO 160 V Collector Emitter Voltage VCEO V 140

 ..7. Size:172K  jmnic
 2n3773.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N3773 DESCRIPTION With TO-3 package Complement to type 2N6609 High DC current gain Low saturation voltage High safe operating area APPLICATIONS Designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as

 ..8. Size:167K  cn sptech
 2n3773.pdf

SPTECH Product Specification isc Silicon NPN Power Transistor 2N3773 DESCRIPTION Excellent Safe Operating Area High DC Current Gain-h =15(Min)@I = 8A FE C Low Saturation Voltage- V )= 1.4V(Max)@ I = 8A CE(sat C Complement to Type 2N6609 APPLICATIONS Designed for high power audio ,disk head positioners and other linear applications, which can also be used in power switch

 ..9. Size:192K  inchange semiconductor
 2n3773.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3773 DESCRIPTION Excellent Safe Operating Area High DC Current Gain-h =15(Min)@I = 8A FE C Low Saturation Voltage- V )= 1.4V(Max)@ I = 8A CE(sat C Complement to Type 2N6609 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for high

 0.1. Size:182K  onsemi
 2n3773g.pdf

2N3773 NPN Power Transistors The 2N3773 is a PowerBaset power transistor designed for high power audio, disk head positioners and other linear applications. This device can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters or inverters. http //onsemi.com Features High Safe Operating Area (100% Tested) 150 W @ 100 V 16 A NPN Completely

 0.2. Size:1274K  cn sps
 2n3773t3bl.pdf

2N3773T3BL Silicon NPN Power Transistor DESCRIPTION Excellent Safe Operating Area High DC Current Gain-h =15(Min)@I = 8A FE C Low Saturation Voltage- V )= 1.4V(Max)@ I = 8A CE(sat C Complement to Type 2N6609 APPLICATIONS Designed for high power audio ,disk head positioners and other linear applications, which can also be used in power switching circuits such as relay or

 9.1. Size:204K  motorola
 2n3771re.pdf

Order this document MOTOROLA by 2N3771/D SEMICONDUCTOR TECHNICAL DATA * 2N3771 High Power NPN Silicon Power 2N3772 Transistors *Motorola Preferred Device . . . designed for linear amplifiers, series pass regulators, and inductive switching 20 and 30 AMPERE applications. POWER TRANSISTORS Forward Biased Second Breakdown Current Capability NPN SILICON IS/b = 3.75 Adc @ VCE = 4

 9.2. Size:42K  st
 2n3771.pdf

2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 2N3771

 9.3. Size:44K  st
 2n3771 2n3772.pdf

2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 2N3771

 9.4. Size:85K  onsemi
 2n3771 2n3772.pdf

2N3771, 2N3772 2N3771 is a Preferred Device High Power NPN Silicon Power Transistors These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications. Features http //onsemi.com Forward Biased Second Breakdown Current Capability 20 and 30 AMPERE IS/b = 3.75 Adc @ VCE = 40 Vdc - 2N3771 = 2.5 Adc @ VCE = 60 Vdc - 2N3772 POWER TRANSISTO

 9.5. Size:86K  onsemi
 2n3771g.pdf

2N3771, 2N3772 2N3771 is a Preferred Device High Power NPN Silicon Power Transistors These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications. Features http //onsemi.com Forward Biased Second Breakdown Current Capability 20 and 30 AMPERE IS/b = 3.75 Adc @ VCE = 40 Vdc - 2N3771 = 2.5 Adc @ VCE = 60 Vdc - 2N3772 POWER TRANSISTO

 9.6. Size:86K  onsemi
 2n3772g.pdf

2N3771, 2N3772 2N3771 is a Preferred Device High Power NPN Silicon Power Transistors These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications. Features http //onsemi.com Forward Biased Second Breakdown Current Capability 20 and 30 AMPERE IS/b = 3.75 Adc @ VCE = 40 Vdc - 2N3771 = 2.5 Adc @ VCE = 60 Vdc - 2N3772 POWER TRANSISTO

 9.7. Size:147K  utc
 2n3772.pdf

UNISONIC TECHNOLOGIES CO., LTD 2N3772 SILICON NPN TRANSISTOR SILICON NPN TRANSISTORS DESCRIPTION The UTC 2N3772 is a silicon power transistor in TO-3 metal case. It is designed for linear amplifiers, series pass regulators, and inductive switching applications. 1 TO-3 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2N3

 9.8. Size:138K  cdil
 2n3772.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3772 NPN SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package Designed for Linear Amplifiers, Series Pass Regulators, and Inductive Switching Applications. ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL UNITS VALUE Collector Base Voltage VCBO V 100 Collector Emitter Voltage VCEO V 60 Colle

 9.9. Size:167K  cn sptech
 2n3772.pdf

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2N3772 DESCRIPTION Excellent Safe Operating Area High DC Current Gain-h =15(Min)@I = 10A FE C Low Saturation Voltage- V )= 1.4V(Max)@ I = 10A CE(sat C APPLICATIONS Designed for linear amplifiers, series pass regulators, and inductive switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME

 9.10. Size:166K  cn sptech
 2n3771.pdf

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2N3771 DESCRIPTION Excellent Safe Operating Area High DC Current Gain-h =15(Min)@I = 15A FE C Low Saturation Voltage- V )= 2.0V(Max)@ I = 15A CE(sat C APPLICATIONS Designed for linear amplifiers, series pass regulators, and inductive switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME

 9.11. Size:195K  inchange semiconductor
 2n3772.pdf

isc Silicon NPN Power Transistor 2N3772 DESCRIPTION Excellent Safe Operating Area High DC Current Gain-h =15(Min)@I = 10A FE C Low Saturation Voltage- V )= 1.4V(Max)@ I = 10A CE(sat C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for linear amplifiers, series pass regulators, and inducti

 9.12. Size:197K  inchange semiconductor
 2n3771.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3771 DESCRIPTION Excellent Safe Operating Area High DC Current Gain-h =15(Min)@I = 15A FE C Low Saturation Voltage- V )= 2.0V(Max)@ I = 15A CE(sat C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for linear amplifiers, series pass

 9.13. Size:204K  inchange semiconductor
 2n3772j.pdf

isc Silicon NPN Power Transistor 2N3772J DESCRIPTION J High DC Current Gain-h 100-150@I = 10A FE C Low Saturation Voltage- V )= 1.4V(Max)@ I = 10A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for linear amplifiers, series pass regulators, and inductive switching applications. ABSOLUTE MAXIMUM RATINGS(T