Справочник транзисторов. GT100-7

 

Биполярный транзистор GT100-7 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: GT100-7
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 400 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 700 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 700 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
   Макcимальный постоянный ток коллектора (Ic): 160 A
   Предельная температура PN-перехода (Tj): 125 °C
   Статический коэффициент передачи тока (hfe): 50
   Корпус транзистора: XM37

 Аналоги (замена) для GT100-7

 

 

GT100-7 Datasheet (PDF)

 9.1. Size:181K  vishay
vs-gt100tp60n.pdf

GT100-7 GT100-7

VS-GT100TP60Nwww.vishay.comVishay SemiconductorsHalf Bridge IGBT Power Module, 600 V, 100 AFEATURES Low VCE(on) trench IGBT technology 5 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (

 9.2. Size:184K  vishay
vs-gt100tp120n.pdf

GT100-7 GT100-7

VS-GT100TP120Nwww.vishay.comVishay SemiconductorsHalf Bridge IGBT Power Module, 1200 V, 100 AFEATURES Low VCE(sat) trench IGBT technology 10 s short circuit capability VCE(sat) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using

 9.3. Size:172K  vishay
vs-gt100la120ux.pdf

GT100-7 GT100-7

VS-GT100LA120UXwww.vishay.comVishay SemiconductorsLow Side Chopper IGBT SOT-227(Trench IGBT), 100 AFEATURES Trench IGBT technology Very low VCE(on) Square RBSOA HEXFRED clamping diode 10 s short circuit capability Fully isolated packageSOT-227 Very low internal inductance ( 5 nH typical) Industry standard outline UL approved

 9.4. Size:172K  vishay
vs-gt100na120ux.pdf

GT100-7 GT100-7

VS-GT100NA120UXwww.vishay.comVishay SemiconductorsHigh Side Chopper IGBT SOT-227(Trench IGBT), 100 AFEATURES Trench IGBT technology Very low VCE(on) Square RBSOA HEXFRED clamping diode 10 s short circuit capability Fully isolated packageSOT-227 Very low internal inductance ( 5 nH typical) Industry standard outline UL approved

 9.5. Size:185K  apt
aptgt100sk120d1.pdf

GT100-7 GT100-7

APTGT100SK120D1 VCES = 1200V Buck chopper IC = 100A @ Tc = 80C Trench IGBT Power Module Application AC and DC motor control 3Q1 Switched Mode Power Supplies 4 Features Trench + Field Stop IGBT Technology 5- Low voltage drop 1- Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage

 9.6. Size:232K  apt
aptgt100x120te3.pdf

GT100-7 GT100-7

APTGT100X120TE3 VCES = 1200V 3 Phase bridge IC = 100A @ Tc = 80C Trench IGBT Power Module Application AC Motor control Features Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA ra

 9.7. Size:185K  apt
aptgt100da170d1.pdf

GT100-7 GT100-7

APTGT100DA170D1 VCES = 1700V Boost chopper IC = 100A @ Tc = 80C Trench IGBT Power Module Application 3 AC and DC motor control Switched Mode Power Supplies Power Factor Correction Features 1 Trench + Field Stop IGBT Technology Q2- Low voltage drop 6- Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes 72

 9.8. Size:225K  apt
aptgt100x120e3.pdf

GT100-7 GT100-7

APTGT100X120E3 VCES = 1200V 3 Phase bridge IC = 100A @ Tc = 80C Trench IGBT Power Module Application AC Motor control Features Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rat

 9.9. Size:185K  apt
aptgt100da120d1.pdf

GT100-7 GT100-7

APTGT100DA120D1 VCES = 1200V Boost chopper IC = 100A @ Tc = 80C Trench IGBT Power Module Application AC and DC motor control 3 Switched Mode Power Supplies Power Factor Correction Features 1 Trench + Field Stop IGBT Technology Q2- Low voltage drop 6- Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes 7-

 9.10. Size:185K  apt
aptgt100sk170d1.pdf

GT100-7 GT100-7

APTGT100SK170D1 VCES = 1700V Buck chopper IC = 100A @ Tc = 80C Trench IGBT Power Module Application 3 AC and DC motor control Q1 Switched Mode Power Supplies 4Features Trench + Field Stop IGBT Technology 51 - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF 2 - Low leakage c

 9.11. Size:185K  apt
aptgt100a120d1.pdf

GT100-7 GT100-7

APTGT100A120D1 VCES = 1200V Phase Leg IC = 100A @ Tc = 80C Trench IGBT Power Module Application Welding converters 3Q1 Switched Mode Power Supplies 4 Uninterruptible Power Supplies Motor control 5Features 1Q2 Trench + Field Stop IGBT Technology 6- Low voltage drop - Low tail current - Switching frequency up to 20 kHz 7- Soft r

 9.12. Size:185K  apt
aptgt100a170d1.pdf

GT100-7 GT100-7

APTGT100A170D1 VCES = 1700V Phase leg IC = 100A @ Tc = 80C Trench IGBT Power Module Application Welding converters 3Q1 Switched Mode Power Supplies Uninterruptible Power Supplies 4 Motor control 5Features 1Q2 Trench + Field Stop IGBT Technology - Low voltage drop 6- Low tail current - Switching frequency up to 20 kHz 7- Soft r

 9.13. Size:641K  goford
gt1003b.pdf

GT100-7 GT100-7

GOFORD GT1003B Description The GT1003B uses advanced trench technology and design to provide excellent R , low gate charge. This DS(ON)device is suitable for use in high frequency Synchronous- recification application. General Features Schematic Diagram @ (Typ) 10V GT1003B100V 7 A 115m 10N10 High density cell design for ultra low Rdson Lead free

 9.14. Size:621K  goford
gt1003a.pdf

GT100-7 GT100-7

GOFORD GT1003A Description The GT1003A uses advanced trench technology and design to provide excellent R , low gate charge. This DS(ON)device is suitable for use in high frequency Synchronous- recification application. General Features Schematic Diagram @ (Typ) 10V GT1003A 100V 7 A 115m 10N10 High density cell design for ultra low Rdson RoHS Co

 9.15. Size:430K  macmic
mmgt100wd120xb6c.pdf

GT100-7 GT100-7

MMGT100WD120XB6C1200V 100A PIM ModuleSeptember 2015 Version 0 RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper

 9.16. Size:371K  macmic
mmgt100w120x6c.pdf

GT100-7 GT100-7

MMGT100W120X6C1200V 100A Six-Pack ModuleSeptember 2015 Version 0 RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated cop

 9.17. Size:260K  macmic
mmgt100j120uz6c.pdf

GT100-7 GT100-7

MMGT100J120UZ6C1200V 100A IGBT ModuleNovember 2018 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) Low switching losses Low saturation voltage and positive temperature coefficient Fast switching and short tail current Popular SOT-227 Package TJmax=175APPLICATIONS AC motor control Motion/servo control Inver

 9.18. Size:878K  cn super semi
sgt100n45t sgp100n45t.pdf

GT100-7 GT100-7

SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 100V Super Gate Power Transistor SG*100N45T Rev. 1.0 Dec. 2016 www.supersemi.com.cn Jun, 2015 SG-FET SGT100N45T/SGP100N45T 100V N-Channel MOSFET Description Features The SG-MOSFET uses trench MOSFET technology that is VDS 100V ID (at Vgs=10V) 25A uniquely optimized to

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