Биполярный транзистор 2N3788 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N3788
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 100 W
Макcимально допустимое напряжение коллектор-база (Ucb): 400 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 325 V
Макcимальный постоянный ток коллектора (Ic): 2 A
Предельная температура PN-перехода (Tj): 200 °C
Граничная частота коэффициента передачи тока (ft): 5 MHz
Ёмкость коллекторного перехода (Cc): 400 pf
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора: TO3
2N3788 Datasheet (PDF)
2n3789 2n3790 2n3791 2n3792.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
DATA SHEET2N3789 2N3790 2N3791 2N3792 PNP POWER TRANSISTORS JEDEC TO-3 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3789 Series types are silicon power transistors manufactured by the epitaxial planar process and designed for medium speed switching and amplifier applications. MAXIMUM RATINGS (TC=25C unless otherwise noted) 2N3789 2N3790 SYMBOL 2N3791 2N3792 UNITS Col
2n3713-2n3714-2n3715-2n3716-2n3789-2n3790-2n3791-2n3792.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2N3713/2N3714/2N3715/2N3716 - NPN2N3789/2N3790/2N3791/2N3792 - PNPEPITAXIAL-BASE NPN - PNPThe 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPNpower transistor in Jedec TO-3 metal case. They are inteded for use in powerlinear and switching applications. The complementary PNPtypes are 2N3789, 2N3790, 2N3791 and 2N3792 respectively.ABSOLUTE MAXIMUM RATINGSSymbol Rat
2n3789xsmd.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2N3789XSMDDimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar PNP Device. 2VCEO = 60V IC = 10A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26
2n3789x.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2N3789XDimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar PNP Device. 3VCEO = 60V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
2n3789.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon PNP Power Transistor 2N3789DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSDesigned for medium-speed switching andamplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .