Биполярный транзистор 2N3792SM
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N3792SM
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 150
W
Макcимально допустимое напряжение коллектор-база (Ucb): 80
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7
V
Макcимальный постоянный ток коллектора (Ic): 10
A
Предельная температура PN-перехода (Tj): 200
°C
Граничная частота коэффициента передачи тока (ft): 4
MHz
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора:
TO252
Аналоги (замена) для 2N3792SM
2N3792SM
Datasheet (PDF)
0.1. Size:10K semelab
2n3792smd.pdf 
2N3792SMDDimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar PNP Device. 2VCEO = 80V IC = 10A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (
8.1. Size:223K motorola
2n3791 2n3792.pdf 
Order this documentMOTOROLAby 2N3791/DSEMICONDUCTOR TECHNICAL DATA2N3791Silicon PNP Power Transistors 2N3792. . . designed for mediumspeed switching and amplifier applications. These devicesfeature:10 AMPERE Total Switching Time @ 3.0 A [ 1.0 s (typ)POWER TRANSISTORS hFE (min) = 50 @ 1.0 APNP SILICON Low VCE(sat) = 0.5 V (typ) @ IC = 5.0 A, IB = 0.5 A60
8.2. Size:122K central
2n3789 2n3790 2n3791 2n3792.pdf 
DATA SHEET2N3789 2N3790 2N3791 2N3792 PNP POWER TRANSISTORS JEDEC TO-3 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3789 Series types are silicon power transistors manufactured by the epitaxial planar process and designed for medium speed switching and amplifier applications. MAXIMUM RATINGS (TC=25C unless otherwise noted) 2N3789 2N3790 SYMBOL 2N3791 2N3792 UNITS Col
8.3. Size:172K comset
2n3713-2n3714-2n3715-2n3716-2n3789-2n3790-2n3791-2n3792.pdf 
2N3713/2N3714/2N3715/2N3716 - NPN2N3789/2N3790/2N3791/2N3792 - PNPEPITAXIAL-BASE NPN - PNPThe 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPNpower transistor in Jedec TO-3 metal case. They are inteded for use in powerlinear and switching applications. The complementary PNPtypes are 2N3789, 2N3790, 2N3791 and 2N3792 respectively.ABSOLUTE MAXIMUM RATINGSSymbol Rat
8.4. Size:130K inchange semiconductor
2n3791 2n3792.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N3791 2N3792 DESCRIPTION With TO-3 package Complement to type 2N3715 ,2N3716 Excellent safe operating area APPLICATIONS Designed for medium-speed switching and amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorABSOLUTE M
8.5. Size:191K inchange semiconductor
2n3792.pdf 
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N3792DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for medium-speed switching andamplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V
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