Биполярный транзистор 2N3799 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N3799
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.36 W
Макcимально допустимое напряжение коллектор-база (Ucb): 90 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 90 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.05 A
Предельная температура PN-перехода (Tj): 200 °C
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 4 pf
Статический коэффициент передачи тока (hfe): 225
Корпус транзистора: TO18
2N3799 Datasheet (PDF)
2n3799.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2N3799SEMELABMECHANICAL DATADimensions in mm (inches)PNP, LOW NOISE5.84 (0.230)5.31 (0.209)AMPLIFIER4.95 (0.195)4.52 (0.178)TRANSISTORFEATURES SILICON PLANAR EPITAXIAL PNPTRANSISTOR0.48 (0.019)0.41 (0.016) CECC SCREENING OPTIONSdia. LOW NOISE AMPLIFIER2.54 (0.100)Nom.APPLICATIONS:3 1 Low Level Amplifier2 Instrumentation Amplifier
2n3791 2n3792.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Order this documentMOTOROLAby 2N3791/DSEMICONDUCTOR TECHNICAL DATA2N3791Silicon PNP Power Transistors 2N3792. . . designed for mediumspeed switching and amplifier applications. These devicesfeature:10 AMPERE Total Switching Time @ 3.0 A [ 1.0 s (typ)POWER TRANSISTORS hFE (min) = 50 @ 1.0 APNP SILICON Low VCE(sat) = 0.5 V (typ) @ IC = 5.0 A, IB = 0.5 A60
2n3789 2n3790 2n3791 2n3792.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
DATA SHEET2N3789 2N3790 2N3791 2N3792 PNP POWER TRANSISTORS JEDEC TO-3 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3789 Series types are silicon power transistors manufactured by the epitaxial planar process and designed for medium speed switching and amplifier applications. MAXIMUM RATINGS (TC=25C unless otherwise noted) 2N3789 2N3790 SYMBOL 2N3791 2N3792 UNITS Col
2n3713-2n3714-2n3715-2n3716-2n3789-2n3790-2n3791-2n3792.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2N3713/2N3714/2N3715/2N3716 - NPN2N3789/2N3790/2N3791/2N3792 - PNPEPITAXIAL-BASE NPN - PNPThe 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPNpower transistor in Jedec TO-3 metal case. They are inteded for use in powerlinear and switching applications. The complementary PNPtypes are 2N3789, 2N3790, 2N3791 and 2N3792 respectively.ABSOLUTE MAXIMUM RATINGSSymbol Rat
2n3790smd.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2N3790SMDDimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar PNP Device. 2VCEO = 80V IC = 10A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (
2n3790xsmd.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2N3790XSMDDimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar PNP Device. 2VCEO = 80V IC = 10A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26
2n3792smd.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2N3792SMDDimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar PNP Device. 2VCEO = 80V IC = 10A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (
2n3791smd.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2N3791SMDDimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar PNP Device. 2VCEO = 60V IC = 10A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (
2n3791 2n3792.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N3791 2N3792 DESCRIPTION With TO-3 package Complement to type 2N3715 ,2N3716 Excellent safe operating area APPLICATIONS Designed for medium-speed switching and amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorABSOLUTE M
2n3790.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon PNP Power Transistor 2N3790DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for medium-speed switching andamplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C
2n3792.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N3792DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for medium-speed switching andamplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V
Другие транзисторы... 2N3792 , 2N3792LP , 2N3792SM , 2N3793 , 2N3794 , 2N3795 , 2N3798 , 2N3798A , TIP3055 , 2N3799A , 2N3799X , 2N38 , 2N380 , 2N3800 , 2N3800DCSM , 2N3801 , 2N3801DCSM .