K2112B - Даташиты. Аналоги. Основные параметры

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2112 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2112 is a N-channel MOS FET of a vertical type and PACKAGE DIMENSIONS (in mm) is a switching element that can be directly driven by the output of 4.5 0.1 an IC operating at 5 V. 1.6 0.2 1.5 0.1 This product has a low ON resistance and superb switching characteristics and is idea

SMD Type MOSFET N-Channel MOSFET 2SK2112 1.70 0.1 Features VDS (V) = 100V ID = 1 A 0.42 0.1 0.46 0.1 RDS(ON) 0.8 (VGS = 10V) Drain (D) RDS(ON) 1.2 (VGS = 4V) 1.Gate 2.Drain Gate (G) Internal diode 3.Source Gate protection diode Source (S) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 100