K2112B Datasheet. Specs and Replacement
Type Designator: K2112B 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 1700 MHz
Collector Capacitance (Cc): 1 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO72
K2112B Substitution
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K2112B datasheet
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2112 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2112 is a N-channel MOS FET of a vertical type and PACKAGE DIMENSIONS (in mm) is a switching element that can be directly driven by the output of 4.5 0.1 an IC operating at 5 V. 1.6 0.2 1.5 0.1 This product has a low ON resistance and superb switching characteristics and is idea... See More ⇒
SMD Type MOSFET N-Channel MOSFET 2SK2112 1.70 0.1 Features VDS (V) = 100V ID = 1 A 0.42 0.1 0.46 0.1 RDS(ON) 0.8 (VGS = 10V) Drain (D) RDS(ON) 1.2 (VGS = 4V) 1.Gate 2.Drain Gate (G) Internal diode 3.Source Gate protection diode Source (S) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 100 ... See More ⇒
Detailed specifications: K2109B, K2110, K2110A, K2110B, K2111, K2111A, K2111B, K2112A, BC327, K2113A, K2113B, K2114A, K2114B, K2115, K2115A, K2115B, K2116A
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