Биполярный транзистор KSA1220 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: KSA1220
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 20 W
Макcимально допустимое напряжение коллектор-база (Ucb): 120 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 120 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1.2 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 175 MHz
Ёмкость коллекторного перехода (Cc): 26 pf
Статический коэффициент передачи тока (hfe): 60
Корпус транзистора: TO126
KSA1220 Datasheet (PDF)
ksa1220 ksa1220a.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
ksa1220-a.pdf
KSA1220/1220AAudio Frequency Power AmplifierHigh Frequency Power Amplifier Complement to KSC2690/KSC2690ATO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage : KSA1220 - 120 V : KSA1220A - 160 VVCEO Collector-Emitter Voltage : KSA1220 - 120
ksa1220-ksa1220a.pdf
KSA1220/1220A(PNP) TO-126 TransistorTO-1261. EMITTER 2. COLLECTOR 3. BASE 3 21 Features Audio frequency power amplifier High frequency power amplifier Complement to KSC2690/KSC2690A MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)2.5007.4002.9001.1007.8001.500Symbol Parameter Value Units3.9003.000
ksa1201.pdf
July 2005KSA1201PNP Epitaxial Silicon TransistorPower Amplifier Collector-Emitter Voltage: VCEO= -120V fT=120MHz Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board Complement to KSC2881Marking1 2 0 1P Y W WSOT-891Weekly code1. Base 2. Collector 3. EmitterYear codehFE grageAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbo
ksa1244.pdf
KSA1244High Current Switching Low Collector-Emitter Saturation Voltage Complement to KSC30741I-PACK1. Base 2. Collector 3. EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage - 60 VVCEO Collector-Emitter Voltage - 50 VVEBO Emitter-Base Voltage - 5 VIB Base Curren
ksa1281.pdf
January 2009KSA1281Audio Power Amplifier Collector Power Dissipation : PC=1W 3 Watt Output ApplicationTO-92L11. Emitter 2. Collector 3. BaseAbsolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -50 VVCEO Collector-Emitter Voltage -50 VVEBO Emitter-Base Voltage -5 VIC Collector Current (DC) -2 APC Collec
ksa1298.pdf
KSA1298Low Frequency Power Amplifier 3 Complement to KSC32652SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage -30 VVCEO Collector-Emitter Voltage -25 VVEBO Emitter-Base Voltage -5 VIC Collector Current -800 mAIB Base Current -160
ksa1203.pdf
July 2005KSA1203PNP Epitaxial Silicon TransistorLow Frequency Power Amplifier 3W Output application Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board Complement to KSC2883Marking1 2 0 3P Y W WSOT-891Weekly code1. Base 2. Collector 3. EmitterYear codehFE grageAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Ratings
ksa1243.pdf
KSA1243Power Amplifier Applications Complement to KSC30731I-PACK1. Base 2. Collector 3. EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage - 30 VVCEO Collector-Emitter Voltage - 30 VVEBO Emitter-Base Voltage - 5 VIB Base Current - 0.6 AIC Collector Current - 3 AP
ksa1298.pdf
KSA1298 PNP EPITAXIAL SILICON TRANSISTORLOW FREQUENCY POWER STO-23Complement to KSC3265ABSOLUTE MAXIMUM RATINGS (T =25 )ACharacteristic Symbol Rating UnitCollector-Base Voltage VCBO -30 VCollector-Emitter Voltage VCEO -25 VEmitter-Base Voltage VEBO -5 VCollector Current IC -800 mABase Current IB -160 mACollector Dissipation PC 200 mWJunction Temperature TJ 150 Sto
ksa1281.pdf
KSA1281PNP Epitaxial SiliconTransistorFeatures Audio Power Amplifierwww.onsemi.com 3 W Output ApplicationABSOLUTE MAXIMUM RATINGS (Values are at TA = 25C unless otherwise noted.)Parameter Symbol Value UnitCollector-Base Voltage VCBO -50 VTCollector-Emitter Voltage VCEO -50 VEmitter-Base Voltage VEBO -5 VCollector Current IC -2 AJunction Temperature TJ 150
ksa1298.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050