Биполярный транзистор KSC5038 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: KSC5038
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 7 W
Макcимально допустимое напряжение коллектор-база (Ucb): 220 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 200 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 0.15 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 400 MHz
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора: TO126
KSC5038 Datasheet (PDF)
ksc5030f.pdf
KSC5030FHigh Voltage Fast Switching TransistorFeatures Fast Speed Switching Wide Safe Operating AreaTO-3PF11.Base 2.Collector 3.EmitterAbsolute Maximum RatingsSymbol Parameter Value UnitsVCBO Collector-Base Voltage 1100 VVCEO Collector-Emitter Voltage 800 VVEBO Emitter-Base Voltage 7 VIC Collector Current (DC) 6 AICP * Collector Current (Pulse) 20 APC Collect
ksc5039.pdf
KSC5039High Voltage Power Switch Switching ApplicationTO-22011.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 5 A ICP Collector Current (Pulse) 10 AIB Base
ksc5039f.pdf
KSC5039FHigh Voltage Power Switch Switching ApplicationTO-220F11.Base 2.Collector 3.EmitterNPN Planar Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 800 V V CEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 5 A ICP Collector Current (Pulse) 10 A
ksc5030pwd.pdf
KSC5030 NPN SILICON TRANSISTORHIGH VOLTAGE AND HIGH RELIABILTYTO-3PHIGH SPEED SWITCHINGWIDE SOAABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector- Base Voltage VCBO 1100 V Collector- Emitter Voltage VCEO 800 V Emitter- Base Voltage VEBO 7 V Collector Current (DC) IC 6 A Collector Current (Pulse) IC 20 A Base Current IB 3 A Collector Dissipation (TC=25
ksc5039.pdf
KSC5039 NPN SILICON TRANSISTORHIGH VOLTAGE POWER SWITCHTO-220SWITCHING APPLICATIONABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 800 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 5 A Collector Current (Pulse) IC 10 A Base Current IB 3 A Collector Dissipation ( TC=25 ) PC 70 W1.Base
ksc5039f.pdf
KSC5039F NPN PLANAR SILICON TRANSISTORHIGH VOLTAGE POWER SWITCHSWITCHING APPLICATION TO-220FABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 800 V Collector-Emitter Voltage V CEO 400 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 5 A Collector Current (Pulse) IC 10 A Base Current IB 3 A Collector Dissipation (TC=25 ) PC 30 W
ksc5031.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5031 DESCRIPTION High Breakdown Voltage- : V(BR)CBO= 1100V(Min) Fast Switching speed Wide Area of Safe Operation High Reliability APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltag
ksc5030f.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5030F DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 800V(Min) High Switching Speed Wide Area of Safe Operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Col
ksc5039.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5039 DESCRIPTION Collector-Emitter Breakdown Voltage- : V(BR)CEO = 400V(Min) High Switching Speed Wide Area of Safe Operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collec
Другие транзисторы... HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2222A , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050