Биполярный транзистор KSC5338F - описание производителя. Основные параметры. Даташиты.
Наименование производителя: KSC5338F
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 40 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1000 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 450 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 14 MHz
Ёмкость коллекторного перехода (Cc): 70 pf
Статический коэффициент передачи тока (hfe): 15
Корпус транзистора: TO220F
KSC5338F Datasheet (PDF)
ksc5338f.pdf
KSC5338F NPN SILICON TRANSISTORHIGH VOLTAGE POWER SWITCHSWITCHING APPLICATIONTO-220F High Speed Switching Wide SOAABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1000 V Collector-Emitter Voltage VCEO 450 V Emitter-Base Voltage VEBO 9 V Collector Current (DC) IC 5 A Collector Current (Pulse) IC 10 A Base Current (DC) IB 2 A1
ksc5338d.pdf
May 2010KSC5338D/KSC5338DWNPN Triple Diffused Planar Silicon TransistorFeatures High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time Two Package Choices : TO-220 or D2-PAKEquivalent CircuitD2-PAKC1BTO-220E11.Base 2.Coll
ksc5338d.pdf
KSC5338D NPN SILICON TRANSISTORTO-220HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION Wide S.O.A. Built-in Free-wheel Diode Suitable for ballast App;ication Low Variable Storage-time spreadABSOLUTE MIXIMUM RATINGCharacteristic Symbol Rating Unit 1.Base 2.Collector 3.Emitter Collector Base Voltage VCBO 1000 V Collector Emitter Voltage VCEO 450 VInternal schematic diagram
ksc5338.pdf
KSC5338 NPN SILICON TRANSISTORHIGH VOLTAGE POWER SWITCHTO-220SWITCHING APPLICATION High Speed Switching Wide SOAABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1000 V Collector-Emitter Voltage VCEO 450 V Emitter-Base Voltage VEBO 9 V Collector Current (DC) IC 5 A1.Base 2.Collector 3.Emitter Collector Current (Pulse) IC 10 A
ksc5338d ksc5338dw.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
ksc5338d.pdf
isc Silicon NPN Power Transistor KSC5338DDESCRIPTIONCollectorEmitter Sustaining VoltageV 450V(Min)CEO:Low Collector Saturation Voltage: V = 0.5V(Max.)@ I = 0.8ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY
ksc5338.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5338 DESCRIPTION Collector-Emitter Breakdown Voltage- : V(BR) CEO= 450V(Min) High Switching Speed Wide Area of Safe Operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collec
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