KSC5367F - описание и поиск аналогов

NPN TRIPLE DIFFUSED KSC5367F PLANAR SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY High speed Switching TO-220F Wide Safe Operating Area High Collector Base Voltage ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage VCBO 1,600 V Collector Emitter Voltage VCEO 800 V Emitter Base Voltage VEBO 12 V Collector Current DC IC 3 A Pulse

NPN TRIPLE DIFFUSED KSC5367 PLANAR SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TO-220 High speed Switching Wide Safe Operating Area High Collector Base Voltage ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage VCBO 1600 V Collector Emitter Voltage VCEO 800 V Emitter Base Voltage VEBO 12 V Collector Current DC IC 3 A Pulse I

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5367 DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO= 800V(Min) High Switching Speed Wide Area of Safe Operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collect

May 2010 KSC5338D/KSC5338DW NPN Triple Diffused Planar Silicon Transistor Features High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time Two Package Choices TO-220 or D2-PAK Equivalent Circuit D2-PAK C 1 B TO-220 E 1 1.Base 2.Coll

KSC5386 High Voltage Color Display Horizontal Equivalent Circuit C Deflection Output (Damper Diode Built In) High Collector-Base Breakdown Voltage BVCBO=1500V B TO-3PF High Speed Switching tF=0.1 s (Typ) 1 Wide S.O.A 50 typ. 1.Base 2.Collector 3.Emitter For C-Monitor (48KHz) E NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings unless

May 2010 KSC5305D NPN Silicon Transistor Features High Voltage High Speed Power Switch Application Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications No need to interest an hFE value because of low variable storage-time spread even though corner spirit product Low base drive requirement Equival

KSC5338D NPN SILICON TRANSISTOR TO-220 HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION Wide S.O.A. Built-in Free-wheel Diode Suitable for ballast App;ication Low Variable Storage-time spread ABSOLUTE MIXIMUM RATING Characteristic Symbol Rating Unit 1.Base 2.Collector 3.Emitter Collector Base Voltage VCBO 1000 V Collector Emitter Voltage VCEO 450 V Internal schematic diagram

NPN TRIPLE DIFFUSED KSC5321F PLANAR SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TO-220F High speed Switching Wide Safe Operating Area ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage VCBO 800 V Collector Emitter Voltage VCEO 500 V Emitter Base Voltage VEBO 7 V Collector Current DC IC 5 A Pulse ICP 10 Base Current DC IB 2 A Pu

KSC5337F NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY HIGH SPEED SWITCHING TO-220F WIDE SOA ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit V Collector-Base Vltage VCBO 700 V Collector-Emitter Voltage V CEO 400 V Emitter-Base Voltage VEBO 9 A Collector Current (DC) IC 8 A Collector Current (Pulse) IC 15 A Base Current IB 4 W Collector Di

NPN TRIPLE DIFFUSED KSC5321 PLANAR SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TO-220 High speed Switching Wide Safe Operating Area ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage VCBO 800 V Collector Emitter Voltage VCEO 500 V Emitter Base Voltage VEBO 7 V Collector Current DC IC 5 A Pulse ICP 10 Base Current DC IB 2 A 1.Ba

KSC5338F NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATION TO-220F High Speed Switching Wide SOA ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1000 V Collector-Emitter Voltage VCEO 450 V Emitter-Base Voltage VEBO 9 V Collector Current (DC) IC 5 A Collector Current (Pulse) IC 10 A Base Current (DC) IB 2 A 1

NPN TRIPLE DIFFUSED KSC5337 PLANER SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH TO-220 SWITCHING APPLICATION High Speed Switching Wide SOA ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO 700 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 9 A Collector Current (DC) IC 8 A Collector Current (Pulse) IC 15 A

KSC5338 NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH TO-220 SWITCHING APPLICATION High Speed Switching Wide SOA ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1000 V Collector-Emitter Voltage VCEO 450 V Emitter-Base Voltage VEBO 9 V Collector Current (DC) IC 5 A 1.Base 2.Collector 3.Emitter Collector Current (Pulse) IC 10 A

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

isc Silicon NPN Power Transistor KSC5338D DESCRIPTION Collector Emitter Sustaining Voltage V 450V(Min) CEO Low Collector Saturation Voltage V = 0.5V(Max.)@ I = 0.8A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5321 DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR) CEO= 500V(Min) High Switching Speed Wide Area of Safe Operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collec

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5386 DESCRIPTION High Collector-Base Voltage- VCBO = 1500V(Min) High Switching Speed Built-in Damper Diode APPLICATIONS Designed for use in high definition color display horizontal deflection output application. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCB

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5337 DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR) CEO= 400V(Min) High Switching Speed Wide Area of Safe Operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collec

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5338 DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR) CEO= 450V(Min) High Switching Speed Wide Area of Safe Operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collec