KSD1692Feature High Dc Durrent Gain Low Collector Saturation Voltage Built-in a Damper Diode at E-C High Power Dissipation : PC = 1.3W (Ta=25C)TO-12611. Emitter 2.Collector 3.BaseNPN Silicon Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSym-Parameter Value Unitsbol VCBO Collector-Base Voltage 150 V VCEO Collector-Emitt

KSD1691Feature Low Collector-Emtter Saturation Voltage & Large Collector Current High Power Dissipation: PC = 1.3W (Ta=25C) Complementary to KSB1151TO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Volta

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

KSD1691(NPN) TO-126 TransistorTO-1261. EMITTER 2. COLLECTOR 3. BASE 3 21 Features Low Collector-Emitter Saturation Voltage & Large Collector Current High Power Dissipation: PC = 1.3W (Ta=25C) 2.5007.4002.9001.1007.8001.5003.9003.0004.100MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)3.20010.6000.0

KSD1691 TO-126C Transistor (NPN)TO-126C1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 Features Low Collector-Emitter Saturation Voltage & Large Collector Current High Power Dissipation: PC = 1.3W (Ta=25C) 3.0007.8003.4008.200 1.800MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)2.2004.0404.240Symbol Parameter Value Uni