KSD5041Q datasheet, аналоги, основные параметры
Наименование производителя: KSD5041Q 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.75 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 150 MHz
Ёмкость коллекторного перехода (Cc): 50 pf
Статический коэффициент передачи тока (hFE): 230
Корпус транзистора: TO92
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Аналоги (замена) для KSD5041Q
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KSD5041Q даташит
7.1. Size:68K fairchild semi
ksd5041.pdf 
KSD5041 AF Output Amplifier for Electronic Flash Unit Low Collector-Emitter Saturation Voltage High Performance at Low Supply Voltage TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter
7.2. Size:319K onsemi
ksd5041.pdf 
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.2. Size:24K samsung
ksd5071pfc.pdf 
NPN TRIPLE DIFFUSED KSD5071 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT TO-3PF APPLICATION (DAMPER DIODE BUILT IN) High Collector-Base Voltage (VCBO=1500V) High Switching Speed (tf. max=0.4uS) ABSOLUTE MAXIMUM RATING Characteristic Symbol Rating Unit Collector Base Voltage VCBO 1500 V Collector Emitter Voltage VCEO 800 V Emitter Base Voltage VEBO 6 V Collector
9.3. Size:54K samsung
ksd5018.pdf 
KSD5018 NPN SILICON DARLINGTON TRANSISTOR HIGH VOLTAGE POWER DARLINGTON TR TO-220 BUILT-IN RESISTOR BETWEEN BASE AND EMITTER FOR MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage VCBO 600 V Collector Emitter Voltage VCEO 275 V Emitter Base Voltage VEBO 10 V Collector Current (DC) IC 4 A *Collector Current (Pulse) IC 6 A 1.Base 2.Collec
9.4. Size:24K samsung
ksd5075pfc.pdf 
NPN TRIPLE DIFFUSED KSD5075 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT TO-3PF APPLICATION (NO Damper Diode) High Collector-Base Voltage (VCBO=1500V) High Speed Switching (tf. max=0.4uS) ABSOLUTE MIXIMUM RATING Characteristic Symbol Rating Unit Collector- Base Voltage VCBO 1500 V Collector- Emitter Voltage VCEO 800 V Emitter- Base Voltage VEBO 6 V Collector Cur
9.5. Size:121K inchange semiconductor
ksd5060.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5060 DESCRIPTION High Breakdown Voltage- VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode APPLICATIONS Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage
9.6. Size:128K inchange semiconductor
ksd5059.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5059 DESCRIPTION High Breakdown Voltage- VCBO= 1500V (Min) High Switching Speed High Reliability APPLICATIONS Designed for color monitor horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collec
9.7. Size:120K inchange semiconductor
ksd5061.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5061 DESCRIPTION High Breakdown Voltage- VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode APPLICATIONS Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage
9.8. Size:124K inchange semiconductor
ksd5017.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5017 DESCRIPTION High Breakdown Voltage- VCBO= 1500V (Min) High Switching Speed High Reliability APPLICATIONS Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-E
9.9. Size:117K inchange semiconductor
ksd5068.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5068 DESCRIPTION High Breakdown Voltage- VCBO= 1500V (Min) High Switching Speed High Reliability APPLICATIONS Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-E
9.10. Size:128K inchange semiconductor
ksd5070.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5070 DESCRIPTION High Breakdown Voltage- VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode APPLICATIONS Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage
9.11. Size:132K inchange semiconductor
ksd5057.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5057 DESCRIPTION High Breakdown Voltage- VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode APPLICATIONS Designed for color monitor horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Vo
9.12. Size:129K inchange semiconductor
ksd5018.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors KSD5018 DESCRIPTION High Breakdown Voltage- V(BR)CEO= 275V(Min) Built-in Resistor Between Base and Emitter Wide Area of Safe Operation APPLICATIONS Designed for motor drive and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collecto
9.13. Size:116K inchange semiconductor
ksd5065.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5065 DESCRIPTION High Breakdown Voltage- VCBO= 1500V (Min) High Switching Speed High Reliability APPLICATIONS Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-E
9.14. Size:128K inchange semiconductor
ksd5058.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5058 DESCRIPTION High Breakdown Voltage- VCBO= 1500V (Min) High Switching Speed High Reliability APPLICATIONS Designed for color monitor horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collec
9.15. Size:132K inchange semiconductor
ksd5056.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5056 DESCRIPTION High Breakdown Voltage- VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode APPLICATIONS Designed for color monitor horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Vo
9.16. Size:121K inchange semiconductor
ksd5062.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5062 DESCRIPTION High Breakdown Voltage- VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode APPLICATIONS Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage
9.17. Size:117K inchange semiconductor
ksd5064.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5064 DESCRIPTION High Breakdown Voltage- VCBO= 1500V (Min) High Switching Speed High Reliability APPLICATIONS Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-E
9.18. Size:117K inchange semiconductor
ksd5066.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5066 DESCRIPTION High Breakdown Voltage- VCBO= 1500V (Min) High Switching Speed High Reliability APPLICATIONS Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-E
Другие транзисторы: KSD5014, KSD5015, KSD5016, KSD5017, KSD5018, KSD5041, KSD5041O, KSD5041P, BC337, KSD5049, KSD5056, KSD5057, KSD5058, KSD5059, KSD5060, KSD5061, KSD5062
