Биполярный транзистор KSD5049 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: KSD5049
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 125 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1300 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 550 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 6 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 6
Корпус транзистора: TO247
KSD5049 Datasheet (PDF)
ksd5041.pdf
KSD5041AF Output Amplifier for Electronic Flash Unit Low Collector-Emitter Saturation Voltage High Performance at Low Supply VoltageTO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 20 VVEBO Emitter
ksd5041.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
ksd5071pfc.pdf
NPN TRIPLE DIFFUSEDKSD5071 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTTO-3PFAPPLICATION (DAMPER DIODE BUILT IN) High Collector-Base Voltage (VCBO=1500V) High Switching Speed (tf. max=0.4uS)ABSOLUTE MAXIMUM RATINGCharacteristic Symbol Rating Unit Collector Base Voltage VCBO 1500 V Collector Emitter Voltage VCEO 800 V Emitter Base Voltage VEBO 6 V Collector
ksd5018.pdf
KSD5018 NPN SILICON DARLINGTON TRANSISTORHIGH VOLTAGE POWER DARLINGTON TRTO-220BUILT-IN RESISTOR BETWEEN BASE ANDEMITTER FOR MOTOR DRIVEABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Base Voltage VCBO 600 V Collector Emitter Voltage VCEO 275 V Emitter Base Voltage VEBO 10 V Collector Current (DC) IC 4 A*Collector Current (Pulse) IC 6 A1.Base 2.Collec
ksd5075pfc.pdf
NPN TRIPLE DIFFUSEDKSD5075 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTTO-3PFAPPLICATION (NO Damper Diode) High Collector-Base Voltage (VCBO=1500V) High Speed Switching (tf. max=0.4uS)ABSOLUTE MIXIMUM RATINGCharacteristic Symbol Rating Unit Collector- Base Voltage VCBO 1500 V Collector- Emitter Voltage VCEO 800 V Emitter- Base Voltage VEBO 6 V Collector Cur
ksd5060.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5060 DESCRIPTION High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode APPLICATIONS Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage
ksd5059.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5059 DESCRIPTION High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability APPLICATIONS Designed for color monitor horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 1500 V VCEO Collec
ksd5061.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5061 DESCRIPTION High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode APPLICATIONS Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage
ksd5017.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5017 DESCRIPTION High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability APPLICATIONS Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 1500 V VCEO Collector-E
ksd5068.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5068 DESCRIPTION High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability APPLICATIONS Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 1500 V VCEO Collector-E
ksd5070.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5070 DESCRIPTION High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode APPLICATIONS Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage
ksd5057.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5057 DESCRIPTION High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode APPLICATIONS Designed for color monitor horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Vo
ksd5018.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors KSD5018 DESCRIPTION High Breakdown Voltage- : V(BR)CEO= 275V(Min) Built-in Resistor Between Base and Emitter Wide Area of Safe Operation APPLICATIONS Designed for motor drive and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collecto
ksd5065.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5065 DESCRIPTION High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability APPLICATIONS Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 1500 V VCEO Collector-E
ksd5058.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5058 DESCRIPTION High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability APPLICATIONS Designed for color monitor horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 1500 V VCEO Collec
ksd5056.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5056 DESCRIPTION High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode APPLICATIONS Designed for color monitor horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Vo
ksd5062.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5062 DESCRIPTION High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode APPLICATIONS Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage
ksd5064.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5064 DESCRIPTION High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability APPLICATIONS Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 1500 V VCEO Collector-E
ksd5066.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5066 DESCRIPTION High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability APPLICATIONS Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 1500 V VCEO Collector-E
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
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