Биполярный транзистор KSD5068
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: KSD5068
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 150
W
Макcимально допустимое напряжение коллектор-база (Ucb): 1500
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 8
A
Предельная температура PN-перехода (Tj): 150
°C
Статический коэффициент передачи тока (hfe): 8
Корпус транзистора:
TO247
Аналоги (замена) для KSD5068
KSD5068
Datasheet (PDF)
..1. Size:117K inchange semiconductor
ksd5068.pdf INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5068 DESCRIPTION High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability APPLICATIONS Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 1500 V VCEO Collector-E
8.1. Size:121K inchange semiconductor
ksd5060.pdf INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5060 DESCRIPTION High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode APPLICATIONS Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage
8.2. Size:120K inchange semiconductor
ksd5061.pdf INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5061 DESCRIPTION High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode APPLICATIONS Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage
8.3. Size:116K inchange semiconductor
ksd5065.pdf INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5065 DESCRIPTION High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability APPLICATIONS Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 1500 V VCEO Collector-E
8.4. Size:121K inchange semiconductor
ksd5062.pdf INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5062 DESCRIPTION High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode APPLICATIONS Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage
8.5. Size:117K inchange semiconductor
ksd5064.pdf INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5064 DESCRIPTION High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability APPLICATIONS Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 1500 V VCEO Collector-E
8.6. Size:117K inchange semiconductor
ksd5066.pdf INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5066 DESCRIPTION High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability APPLICATIONS Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 1500 V VCEO Collector-E
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