Справочник транзисторов. KSR2105

 

Биполярный транзистор KSR2105 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: KSR2105
   Маркировка: R55
   Тип материала: Si
   Полярность: Pre-Biased-PNP
   Встроенный резистор цепи смещения R1 = 4.7 kOhm
   Встроенный резистор цепи смещения R2 = 10 kOhm
   Соотношение сопротивлений R1/R2 = 0.47
   Максимальная рассеиваемая мощность (Pc): 0.2 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 200 MHz
   Ёмкость коллекторного перехода (Cc): 5.5 pf
   Статический коэффициент передачи тока (hfe): 30
   Корпус транзистора: SOT23

 Аналоги (замена) для KSR2105

 

 

KSR2105 Datasheet (PDF)

 ..1. Size:53K  fairchild semi
ksr2105.pdf

KSR2105
KSR2105

KSR2105Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=4.7K, R2=10K) Complement to KSR11052SOT-2311. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingR1BR55R2PNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted

 8.1. Size:52K  fairchild semi
ksr2101.pdf

KSR2105
KSR2105

KSR2101Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1 =4.7K, R2=4.7K) Complement to KSR11012SOT-2311. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingR1BR51R2PNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted

 8.2. Size:53K  fairchild semi
ksr2107.pdf

KSR2105
KSR2105

KSR2107Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=22K, R2=47K) Complement to KSR11072SOT-2311. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingR1BR57R2PNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted

 8.3. Size:52K  fairchild semi
ksr2104.pdf

KSR2105
KSR2105

KSR2104Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=47K, R2=47K) Complement to KSR11042SOT-2311. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingR1BR54R2PNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted

 8.4. Size:53K  fairchild semi
ksr2103.pdf

KSR2105
KSR2105

KSR2103Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=22K, R2=22K) Complement to KSR11032SOT-2311. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingR1BR53R2PNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted

 8.5. Size:41K  fairchild semi
ksr2102.pdf

KSR2105
KSR2105

KSR2102Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10K, R2=10K) Complement to KSR11022SOT-2311. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingR1R52 BR2PNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Sy

 8.6. Size:49K  fairchild semi
ksr2109.pdf

KSR2105
KSR2105

KSR2109Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R=4.7K) Complement to KSR11092SOT-2311. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingRR59 BPNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter

 8.7. Size:68K  samsung
ksr2108.pdf

KSR2105
KSR2105

 8.8. Size:70K  samsung
ksr2106.pdf

KSR2105
KSR2105

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2SC945 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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