MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N4125/DAmplifier TransistorsPNP Silicon2N41252N4126COLLECTOR32BASE1EMITTER123MAXIMUM RATINGSCASE 29 04,

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N4123/DGeneral Purpose TransistorsNPN Silicon2N41232N4124COLLECTOR32BASE1EMITTER123MAXIMUM RATINGSCASE 2

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862N4126PNP general purpose transistor1997 Mar 25Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP general purpose transistor 2N4126FEATURES PINNING Low current (max. 200 mA)PIN DESCRIPTION Low voltage (max. 25 V).1

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862N4124NPN general purpose transistor1997 Mar 25Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN general purpose transistor 2N4124FEATURES PINNING Low current (max. 200 mA)PIN DESCRIPTION Low voltage (max. 25 V).1

2N4125C TO-92BEPNP General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents of 10 A to 100 mA.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsV Collector-Emitter Voltage 30 VCEOV Collector-Base Voltage 30 VCBOV Emitter-Base Voltage 4.0 VEBOI Collector Cur

2N4124 MMBT4124CETO-92CB BSOT-23EMark: ZCNPN General Purpose AmplifierThis device is designed as a general purpose amplifier and switch.The useful dynamic range extends to 100 mA as a switch and to100 MHz as an amplifier.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 25 VVCBO Collector-Base Vo

[]]]]]]]]]]]]]]][]]]]]]]]]]]]]]2N4123C TO-92BENPN General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 100 mA. Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 30 VV Collector-Base Voltage 40 VCBOVEBO Emitter-Base Voltage

2N4126 MMBT4126CEC TO-92B BSOT-23EMark: ZFPNP General Purpose AmplifierThis device is designed for general purpose amplifier and switch-ing applications at collector currents to 10 A as a switch and to100 mA as an amplifier.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 25 VVCBO Collector-Base

TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com

2N4123, 2N4124General PurposeTransistorsNPN Siliconhttp://onsemi.comFeatures Pb-Free Packages are Available*COLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO Vdc2N4123 302N4124 251EMITTERCollector-Base Voltage VCBO Vdc2N4123 402N4124 30Emitter-Base Voltage VEBO 5.0 VdcCollector Current - Continuous IC 200 mAdcTO

2N4123, 2N4124General PurposeTransistorsNPN Siliconhttp://onsemi.comFeatures Pb-Free Packages are Available*COLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO Vdc2N4123 302N4124 251EMITTERCollector-Base Voltage VCBO Vdc2N4123 402N4124 30Emitter-Base Voltage VEBO 5.0 VdcCollector Current - Continuous IC 200 mAdcTO

2N4124 0.2 A, 30 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 High DC Current Gain High Transition FrequencyG H Emitter Base CollectorJA DB CollectorMillimeterREF.Min. Max.KA 4.40 4.70B 4.30 4.70C 12.70 -D 3.30 3.

2N4126 -0.2 A, -25 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 PNP Silicon Epitaxial Transistor for Switching and Amplifier Applications. Complementary of the 2N4124 G H Emitter Base CollectorJA DMillimeter REF. BMin. Max.Collecto