JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 KTA1298 TRANSISTOR (PNP) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Low frequency power amplifier application Power switching application MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -35 V VCEO Collector-Emit

SEMICONDUCTOR KTA1298TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORLOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. EL B LFEATURESDIM MILLIMETERS High DC Current Gain : hFE=100 320. _+2.93 0.20AB 1.30+0.20/-0.15 Low Saturation VoltageC 1.30 MAX2: VCE(sat)=-0.4V(Max.) (IC=-500mA, IB=-20mA). 3 D 0.45+0.15/-0.05E 2.40+0.30/-0.20 Suitable

KTA1298 TRANSISTOR (PNP) SOT-23 1. BASE FEATURES 2. EMITTER Low frequency power amplifier application 3. COLLECTOR Power switching application MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current Continuous -0.8 A

KTA1298 SOT-23 Transistor(PNP)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Low frequency power amplifier application Power switching application MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -35 V Dimensions in inches and (millimeters)VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V

SMD Type TransistorsPNP TransistorsKTA1298SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Power Dissipation: PC=200mW Collector Current: IC=-800mA1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Emitter Voltage VCEO -35 VCollector-Ba

Plastic-Encapsulate TransistorsFEATURESLow frequency power amplifier application KTA1298(PNP)Power switching applicationMAXIMUM RATINGS (TA=25 unless otherwise noted)Parameter Symbol Value UnitVCBOCollector-Base Voltage -35 VVCEOCollector-Emitter Voltage -30 VVEBOEmitter-Base Voltage -5 VICCollector Current -Continuous -800 mA1. BASECollector Power Dissipation PC 2

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO 92S KTA1297 TRANSISTOR (PNP) 1. EMITTER FEATURES 2. COLLECTOR General Purpose Switching Application 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -20 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base

SEMICONDUCTOR KTA1296TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORPOWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION.B CFEATURES Low Saturation Voltage. : VCE(sat)=-0.5V(Max.) at IC=-2AN DIM MILLIMETERS Complementary to KTC3266. A 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85MAXIMUM RATING (Ta=25 )H 0.45_HJ 14.00 + 0.50CHARAC

MCCKTA1270-OMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311KTA1270-YPhone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS PNPCompliant. See ordering information)Plastic-Encapsulate Epoxy meets

MCCKTA1267-OMicro Commercial ComponentsTM20736 Marilla Street ChatsworthKTA1267-YMicro Commercial ComponentsCA 91311Phone: (818) 701-4933KTA1267-GRFax: (818) 701-4939Features Excellent hFE Linearity: hFE(0.1mA)/hFE(2.0mA)=0.95(Typ)PNP General Low Noise: NF=1.0dB(Typ.), 10dB(Max.) Complementary to KTC3199Purpose Application Marking: A1267 Epox

SEMICONDUCTOR KTA1282TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. B CFEATURES Complementary to KTC3210.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXMAXIMUM RATING (Ta=25 ) GC 3.70 MAXDCHARACTERISTIC SYMBOL RATING UNIT D 0.45E 1.00F 1.27VCBO -30 VCollector-Base VoltageG 0.85H 0.45VCEO -30 VCollector-Emitter Voltage_HJ 14.00 +

SEMICONDUCTOR KTA1225D/LTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE APPLICATION.FEATURES AI C JHigh Transition Frequency : fT=100MHz(Typ.).DIM MILLIMETERSComplementary to KTC2983D/L _A 6.60 + 0.2_B 6.10 + 0.2_C 5.0 + 0.2_D 1.10 + 0.2_E 2.70 + 0.2_F 2.30 + 0.1H 1.00 MAX_I 2.30 + 0.2MAXIMUM RATING (Ta=25 ) _J 0.5 + 0.1_H K 2

SEMICONDUCTOR KTA1275TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORCOLOR TV VERT. DEFELECTION OUTPUT APPLICATION.COLOR TV CLASS B SOUND OUTPUT APPLICATION.B DFEATURESHigh Voltage : VCEO=-160V.DIM MILLIMETERSPLarge Continuous Collector Current Capability.DEPTH:0.2A 7.20 MAXComplementary to KTC3228. B 5.20 MAXCC 0.60 MAXSD 2.50 MAXQE 1.15 MAXKF 1.27G 1.70

SEMICONDUCTOR KTA1266TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.FEATURES Excellent hFE Linearity: hFE(2)=80(Typ.) at VCE=-6V, IC=-150mA: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).Low Noise : NF=1dB(Typ.). at f=1kHz.Complementary to KTC3198. MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBO -50 VCollecto

SEMICONDUCTOR KTA1281TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORPOWER AMPLIFIER APPLICATIONS.POWER SWITCHING APPLICATIONS. FEATURESLow Collector Saturation Voltage : VCE(sat)=-0.5V(Max.) (IC=-1A)High Speed Switching Time : tstg=1.0S(Typ.)Complementary to KTC3209.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBO -50 VCollector-Base VoltageVCEO

SEMICONDUCTOR KTA1277TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE APPLICATION.DC-DC CONVERTER.B DLOW POWER SWITCHING REGULATOR.FEATURES DIM MILLIMETERSP High Breakdown Voltage.DEPTH:0.2A 7.20 MAX Low Collector Saturation Voltage. B 5.20 MAXCC 0.60 MAXS High Speed Switching.D 2.50 MAXQE 1.15 MAXKF 1.27G 1.70 MAXH 0.55 MAXFF_J 14.0

SEMICONDUCTOR KTA1272TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. FEATURES BHigh hFE : hFE=100320.Complementary to KTC3204.DIM MILLIMETERSOA 3.20 MAXHM B 4.30 MAXC 0.55 MAX_D 2.40 + 0.15E 1.27MAXIMUM RATING (Ta=25)F 2.30C_+G 14.00 0.50CHARACTERISTIC SYMBOL RATING UNITH 0.60 MAXJ 1.05VCBO -35 VCollector-Base

SEMICONDUCTOR KTA1273TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION.B DFEATURES Complementary to KTC3205.DIM MILLIMETERSPDEPTH:0.2A 7.20 MAXB 5.20 MAXCC 0.60 MAXSMAXIMUM RATING (Ta=25 )D 2.50 MAXQE 1.15 MAXKCHARACTERISTIC SYMBOL RATING UNITF 1.27G 1.70 MAXVCBO -30 VH 0.55 MAXCollector-Base Voltage FF_J 14.00 + 0.50K 0

SEMICONDUCTOR KTA1279TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE APPLICATION.TELEPHONE APPLICATION.B CMAXIMUM RATING (Ta=25 )N DIM MILLIMETERSCHARACTERISTIC SYMBOL RATING UNITA 4.70 MAXEKB 4.80 MAXGVCBO -300 VCollector-Base VoltageC 3.70 MAXDD 0.45VCEO -300 VCollector-Emitter Voltage E 1.00F 1.27G 0.85VEBO -5.0 VEmitter-Base Voltage

SEMICONDUCTOR KTA1266ATECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURES Excellent hFE Linearity: hFE(2)=80(Typ.) at VCE=-6V, IC=-150mA: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).N DIM MILLIMETERSA 4.70 MAXLow Noise : NF=1dB(Typ.). at f=1kHz. EKB 4.80 MAXGComplementary to KTC3198A. C 3.70 MAXDD 0.45E

SEMICONDUCTOR KTA1241TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSTROBO FLASH APPLICATION.HIGH CURRENT APPLICATION.B DFEATUREShFE=100 320 (VCE=-2V, IC=-0.5A).DIM MILLIMETERSPhFE=70(Min.) (VCE=-2V, IC=-4A).DEPTH:0.2A 7.20 MAXLow Collector Saturation Voltage. B 5.20 MAXCC 0.60 MAXS: VCE(sat)=-0.5V (IC=-3A, IB=-75mA). D 2.50 MAXQE 1.15 MAXKHigh Power Dis

SEMICONDUCTOR KTA1267TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION SWITCHING APPLICATION.BFEATURESExcellent hFE Linearity: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).DIM MILLIMETERSOA 3.20 MAXLow Noise : NF=1dB(Typ.), 10dB(Max.).HM B 4.30 MAXC 0.55 MAXComplementary to KTC3199._D 2.40 + 0.15E 1.27F 2.30C_+G 14.00 0.50H 0.60

SEMICONDUCTOR KTA1268TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORLOW NOISE AMPLIFIER APPLICATION.HIGH VOLTAGE APPLICATION.FEATURES Low Noise. : NF=3dB(Typ.), Rg=100, VCE=-6V, IC=-100A, f=1kHz: NF=0.5dB(Typ.), Rg=1k, VCE=-6V, IC=-100A, f=1kHz.High DC Current Gain : hFE=200700.High Voltage : VCEO=-120V.Low Pulse Noise. Low 1/f Noise. Complementar

SEMICONDUCTOR KTA1274TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. B DFEATURES Complementary to KTC3227.DIM MILLIMETERSPDEPTH:0.2A 7.20 MAXB 5.20 MAXCC 0.60 MAXSMAXIMUM RATING (Ta=25 )D 2.50 MAXQE 1.15 MAXKCHARACTERISTIC SYMBOL RATING UNITF 1.27G 1.70 MAXVCBO -80 VCollector-Base Voltage H 0.55 MAXFF_J 14.00 + 0.50

SEMICONDUCTOR KTA1242D/LTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSTROBO FLASH APPLICATION.HIGH CURRENT APPLICATION.AI C JFEATURESDIM MILLIMETERShFE=100 320 (VCE=-2V, IC=-0.5A)._A 6.60 + 0.2_B 6.10 + 0.2Low Collector Saturation Voltage. _C 5.0 + 0.2_D 1.10 + 0.2: VCE(sat)=-0.5V (IC=-3A, IB=-75mA). _E 2.70 + 0.2_F 2.30 + 0.1H 1.00 MAX_I 2.3

SEMICONDUCTOR KTA1243TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSTROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. B CFEATURES hFE=100 320 (VCE=-2V, IC=-0.5A). hFE=70(Min.) (VCE=-2V, IC=-4A).N DIM MILLIMETERS Low Collector Saturation Voltage. A 4.70 MAXEKB 4.80 MAX: VCE(sat)=-0.5V (IC=-3A, IB=-75mA). GC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85H 0.45_MA

SEMICONDUCTOR KTA1271ATECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. FEATURES B CHigh hFE : hFE=100320.Complementary to KTC3203A.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGMAXIMUM RATING (Ta=25)C 3.70 MAXDD 0.45CHARACTERISTIC SYMBOL RATING UNITE 1.00F 1.27G 0.85VCBO -35 VCollector-Base VoltageH 0.45_HJ 14.00 + 0

SEMICONDUCTOR KTA1270TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. FEATURES Excellent hFE Linearity: hFE(2)=25(Min.) at VCE=-6V, IC=-400mA.Complementary to KTC3202.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBO -35 VCollector-Base VoltageVCEO -30 VCollector-Emitter VoltageVEBOEmitter-Base Voltag

SEMICONDUCTOR KTA1271TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. B CFEATURES High hFE : hFE=100 320. Complementary to KTC3203.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDMAXIMUM RATING (Ta=25 )D 0.45E 1.00CHARACTERISTIC SYMBOL RATING UNITF 1.27G 0.85VCBO -35 VCollector-Base Voltage H 0.45_HJ 14.00 + 0.50K 0.

KTA1273 TRANSISTOR (PNP) SOT-89-3L FEATURES 1. BASE High Current Low Voltage2. COLLECTOR Complementary to KTC3205 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -2 A PC Collector Power Dissipation 5

KTA1266(PNP)TO-92 TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Excellent hFE Linearity Low noise Complementary to KTC3198 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 VVCEO Collector-Emitter Voltage -50 VVEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters)IC Co

KTA1281 TO-92MOD Transistor (PNP)TO-92MOD1. EMITTER 1 22. COLLECTOR 3 3. BASE Features5.8006.200 Low Collector Saturation Voltage: VCE(sat)=-0.5V(Max.)(IC=-1A) High Speed Switching time: tstg=1.0 S(Typ.). 8.4008.800Complementary to KTC3209. 0.9001.1000.400MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.600Symbol Parameter Value Units13.8

KTA1281 TO-92L Transistor (PNP)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 4.7005.100 2 3 1Features7.800 Low Collector Saturation Voltage: VCE(sat)=-0.5V(Max.)(IC=-1A) 8.200 High Speed Switching time: tstg=1.0 S(Typ.). 0.600Complementary to KTC3209. 0.8000.350MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.55013.800Symbol Parameter Value Units14.2

KTA1273 TO-92L Transistor (PNP)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 2 3 4.70015.100Features Complementary to KTC3205. 7.800 8.200MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.6000.800Symbol Parameter Value Units0.350VCBO Collector-Base Voltage -30 V0.55013.800VCEO Collector-Emitter Voltage -30 V 14.200VEBO Emitter-Base Voltage -5 V IC Co

KTA1270(PNP)TO-92 TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Geenral purpose application switching application MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters)IC Collector Curren

KTA1266WEITRONPNP Plastic-Encapsulate TransistorP b Lead(Pb)-Free1. EMITTER2. COLLECTOR3. BASEFEATURES : Excellent hFE LinearityTO-92 Low noiseMAXIMUM RATINGS (TA=25 unless otherwise noted)Parameter Symbol Value UnitsCollector-Base Voltage VCBO -50 VCollector-Emitter Voltage VCEO -50 VEmitter-Base Voltage VEBO -5 VCollector Current -Continuous IC -0.1

KTA1266 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features ,, KTC3198 Excellent hFE linearity, low noise, complementary pair with KTC3198. / Applications General purpose and switchi

KTA1273T(BR3CG1273T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features KTC3205T(BR3DG3205T) Complementary pair with KTC3205T(BR3DG3205T). / Applications High current applications. / Equivalent Circuit

KTA1268 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features h , FELow noise, high hFE, high breakdown voltage. / Applications Low noise audio amplifier application. / Equivalent Ci

DIP Type TransistorsPNP TransistorsKTA1266Unit:mmTO-924.8 0.3 3.8 0.3 Features Excellent hFE Linearity Low Noise Complementary to KTC31980.60 Max0.45 0.1 0.521 31.Emitter2.Collector1.272.54 3.Base Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO

DIP Type TransistorsPNP TransistorsKTA1281TO-92LUnit:mm4.9 0.20.7 0.1 Features0.45 0.1 Low Collector Saturation Voltage High Speed Switching Time21 3 Comlementary to KTC32091.27 2.54 0.11.60 (max)Emitter1.2.Collector3.Base4.0(min) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage V

DIP Type TransistorsPNP TransistorsKTA1270Unit:mmTO-924.8 0.3 3.8 0.3 Features Excellent hFE Linearity Complementary to KTC3202.0.60 Max0.45 0.1 0.521 31.Emitter2.Collector1.272.54 3.Base Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -35 Collector - Emitter Voltage VCEO -30 V Emitter