KTA1298 Todos los transistores

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 KTA1298 TRANSISTOR (PNP) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Low frequency power amplifier application Power switching application MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -35 V VCEO Collector-Emit

SEMICONDUCTOR KTA1298 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS High DC Current Gain hFE=100 320. _ + 2.93 0.20 A B 1.30+0.20/-0.15 Low Saturation Voltage C 1.30 MAX 2 VCE(sat)=-0.4V(Max.) (IC=-500mA, IB=-20mA). 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 Suitable

KTA1298 TRANSISTOR (PNP) SOT-23 1. BASE FEATURES 2. EMITTER Low frequency power amplifier application 3. COLLECTOR Power switching application MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current Continuous -0.8 A

KTA1298 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Low frequency power amplifier application Power switching application MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -35 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V

SMD Type Transistors PNP Transistors KTA1298 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Power Dissipation PC=200mW Collector Current IC=-800mA 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Emitter Voltage VCEO -35 V Collector-Ba

Plastic-Encapsulate Transistors FEATURES Low frequency power amplifier application KTA1298(PNP) Power switching application MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -800 mA 1. BASE Collector Power Dissipation PC 2

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO 92S KTA1297 TRANSISTOR (PNP) 1. EMITTER FEATURES 2. COLLECTOR General Purpose Switching Application 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -20 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base

SEMICONDUCTOR KTA1296 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. B C FEATURES Low Saturation Voltage. VCE(sat)=-0.5V(Max.) at IC=-2A N DIM MILLIMETERS Complementary to KTC3266. A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RATING (Ta=25 ) H 0.45 _ H J 14.00 + 0.50 CHARAC

MCC KTA1270-O Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 KTA1270-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS PNP Compliant. See ordering information) Plastic-Encapsulate Epoxy meets

MCC KTA1267-O Micro Commercial Components TM 20736 Marilla Street Chatsworth KTA1267-Y Micro Commercial Components CA 91311 Phone (818) 701-4933 KTA1267-GR Fax (818) 701-4939 Features Excellent hFE Linearity hFE(0.1mA)/hFE(2.0mA)=0.95(Typ) PNP General Low Noise NF=1.0dB(Typ.), 10dB(Max.) Complementary to KTC3199 Purpose Application Marking A1267 Epox

SEMICONDUCTOR KTA1282 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURES Complementary to KTC3210. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX MAXIMUM RATING (Ta=25 ) G C 3.70 MAX D CHARACTERISTIC SYMBOL RATING UNIT D 0.45 E 1.00 F 1.27 VCBO -30 V Collector-Base Voltage G 0.85 H 0.45 VCEO -30 V Collector-Emitter Voltage _ H J 14.00 +

SEMICONDUCTOR KTA1225D/L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURES A I C J High Transition Frequency fT=100MHz(Typ.). DIM MILLIMETERS Complementary to KTC2983D/L _ A 6.60 + 0.2 _ B 6.10 + 0.2 _ C 5.0 + 0.2 _ D 1.10 + 0.2 _ E 2.70 + 0.2 _ F 2.30 + 0.1 H 1.00 MAX _ I 2.30 + 0.2 MAXIMUM RATING (Ta=25 ) _ J 0.5 + 0.1 _ H K 2

SEMICONDUCTOR KTA1275 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR COLOR TV VERT. DEFELECTION OUTPUT APPLICATION. COLOR TV CLASS B SOUND OUTPUT APPLICATION. B D FEATURES High Voltage VCEO=-160V. DIM MILLIMETERS P Large Continuous Collector Current Capability. DEPTH 0.2 A 7.20 MAX Complementary to KTC3228. B 5.20 MAX C C 0.60 MAX S D 2.50 MAX Q E 1.15 MAX K F 1.27 G 1.70

SEMICONDUCTOR KTA1266 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity hFE(2)=80(Typ.) at VCE=-6V, IC=-150mA hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). Low Noise NF=1dB(Typ.). at f=1kHz. Complementary to KTC3198. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO -50 V Collecto

SEMICONDUCTOR KTA1281 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. FEATURES Low Collector Saturation Voltage VCE(sat)=-0.5V(Max.) (IC=-1A) High Speed Switching Time tstg=1.0 S(Typ.) Complementary to KTC3209. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO -50 V Collector-Base Voltage VCEO

SEMICONDUCTOR KTA1277 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. DC-DC CONVERTER. B D LOW POWER SWITCHING REGULATOR. FEATURES DIM MILLIMETERS P High Breakdown Voltage. DEPTH 0.2 A 7.20 MAX Low Collector Saturation Voltage. B 5.20 MAX C C 0.60 MAX S High Speed Switching. D 2.50 MAX Q E 1.15 MAX K F 1.27 G 1.70 MAX H 0.55 MAX FF _ J 14.0

SEMICONDUCTOR KTA1272 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURES B High hFE hFE=100 320. Complementary to KTC3204. DIM MILLIMETERS O A 3.20 MAX H M B 4.30 MAX C 0.55 MAX _ D 2.40 + 0.15 E 1.27 MAXIMUM RATING (Ta=25 ) F 2.30 C _ + G 14.00 0.50 CHARACTERISTIC SYMBOL RATING UNIT H 0.60 MAX J 1.05 VCBO -35 V Collector-Base

SEMICONDUCTOR KTA1273 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. B D FEATURES Complementary to KTC3205. DIM MILLIMETERS P DEPTH 0.2 A 7.20 MAX B 5.20 MAX C C 0.60 MAX S MAXIMUM RATING (Ta=25 ) D 2.50 MAX Q E 1.15 MAX K CHARACTERISTIC SYMBOL RATING UNIT F 1.27 G 1.70 MAX VCBO -30 V H 0.55 MAX Collector-Base Voltage FF _ J 14.00 + 0.50 K 0

SEMICONDUCTOR KTA1279 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION. B C MAXIMUM RATING (Ta=25 ) N DIM MILLIMETERS CHARACTERISTIC SYMBOL RATING UNIT A 4.70 MAX E K B 4.80 MAX G VCBO -300 V Collector-Base Voltage C 3.70 MAX D D 0.45 VCEO -300 V Collector-Emitter Voltage E 1.00 F 1.27 G 0.85 VEBO -5.0 V Emitter-Base Voltage

SEMICONDUCTOR KTA1266A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Excellent hFE Linearity hFE(2)=80(Typ.) at VCE=-6V, IC=-150mA hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N DIM MILLIMETERS A 4.70 MAX Low Noise NF=1dB(Typ.). at f=1kHz. E K B 4.80 MAX G Complementary to KTC3198A. C 3.70 MAX D D 0.45 E

SEMICONDUCTOR KTA1241 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. B D FEATURES hFE=100 320 (VCE=-2V, IC=-0.5A). DIM MILLIMETERS P hFE=70(Min.) (VCE=-2V, IC=-4A). DEPTH 0.2 A 7.20 MAX Low Collector Saturation Voltage. B 5.20 MAX C C 0.60 MAX S VCE(sat)=-0.5V (IC=-3A, IB=-75mA). D 2.50 MAX Q E 1.15 MAX K High Power Dis

SEMICONDUCTOR KTA1267 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. B FEATURES Excellent hFE Linearity hFE(0.1mA)/hFE(2mA)=0.95(Typ.). DIM MILLIMETERS O A 3.20 MAX Low Noise NF=1dB(Typ.), 10dB(Max.). H M B 4.30 MAX C 0.55 MAX Complementary to KTC3199. _ D 2.40 + 0.15 E 1.27 F 2.30 C _ + G 14.00 0.50 H 0.60

SEMICONDUCTOR KTA1268 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES Low Noise. NF=3dB(Typ.), Rg=100 , VCE=-6V, IC=-100 A, f=1kHz NF=0.5dB(Typ.), Rg=1k , VCE=-6V, IC=-100 A, f=1kHz. High DC Current Gain hFE=200 700. High Voltage VCEO=-120V. Low Pulse Noise. Low 1/f Noise. Complementar

SEMICONDUCTOR KTA1274 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. B D FEATURES Complementary to KTC3227. DIM MILLIMETERS P DEPTH 0.2 A 7.20 MAX B 5.20 MAX C C 0.60 MAX S MAXIMUM RATING (Ta=25 ) D 2.50 MAX Q E 1.15 MAX K CHARACTERISTIC SYMBOL RATING UNIT F 1.27 G 1.70 MAX VCBO -80 V Collector-Base Voltage H 0.55 MAX FF _ J 14.00 + 0.50

SEMICONDUCTOR KTA1242D/L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. A I C J FEATURES DIM MILLIMETERS hFE=100 320 (VCE=-2V, IC=-0.5A). _ A 6.60 + 0.2 _ B 6.10 + 0.2 Low Collector Saturation Voltage. _ C 5.0 + 0.2 _ D 1.10 + 0.2 VCE(sat)=-0.5V (IC=-3A, IB=-75mA). _ E 2.70 + 0.2 _ F 2.30 + 0.1 H 1.00 MAX _ I 2.3

SEMICONDUCTOR KTA1243 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. B C FEATURES hFE=100 320 (VCE=-2V, IC=-0.5A). hFE=70(Min.) (VCE=-2V, IC=-4A). N DIM MILLIMETERS Low Collector Saturation Voltage. A 4.70 MAX E K B 4.80 MAX VCE(sat)=-0.5V (IC=-3A, IB=-75mA). G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ MA

SEMICONDUCTOR KTA1271A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURES B C High hFE hFE=100 320. Complementary to KTC3203A. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G MAXIMUM RATING (Ta=25 ) C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 G 0.85 VCBO -35 V Collector-Base Voltage H 0.45 _ H J 14.00 + 0

SEMICONDUCTOR KTA1270 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity hFE(2)=25(Min.) at VCE=-6V, IC=-400mA. Complementary to KTC3202. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO -35 V Collector-Base Voltage VCEO -30 V Collector-Emitter Voltage VEBO Emitter-Base Voltag

SEMICONDUCTOR KTA1271 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURES High hFE hFE=100 320. Complementary to KTC3203. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D MAXIMUM RATING (Ta=25 ) D 0.45 E 1.00 CHARACTERISTIC SYMBOL RATING UNIT F 1.27 G 0.85 VCBO -35 V Collector-Base Voltage H 0.45 _ H J 14.00 + 0.50 K 0.

KTA1273 TRANSISTOR (PNP) SOT-89-3L FEATURES 1. BASE High Current Low Voltage 2. COLLECTOR Complementary to KTC3205 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -2 A PC Collector Power Dissipation 5

KTA1266(PNP) TO-92 Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Excellent hFE Linearity Low noise Complementary to KTC3198 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters) IC Co

KTA1281 TO-92MOD Transistor (PNP) TO-92MOD 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE Features 5.800 6.200 Low Collector Saturation Voltage VCE(sat)=-0.5V(Max.)(IC=-1A) High Speed Switching time tstg=1.0 S(Typ.). 8.400 8.800 Complementary to KTC3209. 0.900 1.100 0.400 MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.600 Symbol Parameter Value Units 13.8

KTA1281 TO-92L Transistor (PNP) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 4.700 5.100 2 3 1 Features 7.800 Low Collector Saturation Voltage VCE(sat)=-0.5V(Max.)(IC=-1A) 8.200 High Speed Switching time tstg=1.0 S(Typ.). 0.600 Complementary to KTC3209. 0.800 0.350 MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.550 13.800 Symbol Parameter Value Units 14.2

KTA1273 TO-92L Transistor (PNP) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 2 3 4.700 1 5.100 Features Complementary to KTC3205. 7.800 8.200 MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.600 0.800 Symbol Parameter Value Units 0.350 VCBO Collector-Base Voltage -30 V 0.550 13.800 VCEO Collector-Emitter Voltage -30 V 14.200 VEBO Emitter-Base Voltage -5 V IC Co

KTA1270(PNP) TO-92 Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Geenral purpose application switching application MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters) IC Collector Curren

KTA1266 WEITRON PNP Plastic-Encapsulate Transistor P b Lead(Pb)-Free 1. EMITTER 2. COLLECTOR 3. BASE FEATURES Excellent hFE Linearity TO-92 Low noise MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -0.1

KTA1266 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features , , KTC3198 Excellent hFE linearity, low noise, complementary pair with KTC3198. / Applications General purpose and switchi

KTA1268 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features h , FE Low noise, high hFE, high breakdown voltage. / Applications Low noise audio amplifier application. / Equivalent Ci

DIP Type Transistors PNP Transistors KTA1266 Unit mm TO-92 4.8 0.3 3.8 0.3 Features Excellent hFE Linearity Low Noise Complementary to KTC3198 0.60 Max 0.45 0.1 0.5 2 1 3 1.Emitter 2.Collector 1.27 2.54 3.Base Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO

DIP Type Transistors PNP Transistors KTA1281 TO-92L Unit mm 4.9 0.2 0.7 0.1 Features 0.45 0.1 Low Collector Saturation Voltage High Speed Switching Time 2 1 3 Comlementary to KTC3209 1.27 2.54 0.1 1.60 (max) Emitter 1. 2.Collector 3.Base 4.0(min) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage V

DIP Type Transistors PNP Transistors KTA1270 Unit mm TO-92 4.8 0.3 3.8 0.3 Features Excellent hFE Linearity Complementary to KTC3202. 0.60 Max 0.45 0.1 0.5 2 1 3 1.Emitter 2.Collector 1.27 2.54 3.Base Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -35 Collector - Emitter Voltage VCEO -30 V Emitter