Биполярный транзистор KTB1369 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: KTB1369
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 20 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 180 V
Макcимальный постоянный ток коллектора (Ic): 2 A
Предельная температура PN-перехода (Tj): 175 °C
Статический коэффициент передачи тока (hfe): 70
Корпус транзистора: TO220F
KTB1369 Datasheet (PDF)
ktb1369.pdf
SEMICONDUCTOR KTB1369TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE APPLICATION TV, MONITOR VERTICAL OUTPUT APPLICATIONACDRIVER STAGE APPLICATIONDIM MILLIMETERSSCOROR TV CLASS B SOUND OUTPUT APPLICATION_A 10.0 0.3+_+B 15.0 0.3EC _2.70 0.3+D 0.76+0.09/-0.05FEATURES_E 3.2 0.2+High Breakdown Voltage : VCEO=-180V(Min.) _F 3.0 0.3+
ktb1369.pdf
isc Silicon PNP Power Transistor KTB1369DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -180V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -1.0V(Max)@ (I = -0.5A, I = -50mA)CE(sat) C BComplement to Type KTD2061Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh Voltage applicationTV, monitor verti
ktb1368.pdf
SEMICONDUCTOR KTB1368TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTORGENERAL PURPOSE APPLICATION.ACFEATURES DIM MILLIMETERSSGood Linearity of hFE._A 10.0 + 0.3_+B 15.0 0.3EComplementary to KTD2060.C _2.70 0.3+D 0.76+0.09/-0.05_E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_+J 13.6 0.5L LMAXIMUM RATING (Ta=25 )RK _3.7 0.2
ktb1366.pdf
SEMICONDUCTOR KTB1366TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTORGENERAL PURPOSE APPLICATION.ACFEATURESDIM MILLIMETERSSLow Collector Saturation Voltage_A 10.0 + 0.3_+B 15.0 0.3E: VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A.C _2.70 0.3+D 0.76+0.09/-0.05Collector Power Dissipation_E 3.2 0.2+: PC=25W (Tc=25 ) _F 3.0 0.3+_12.0 0.3G +Comple
ktb1367.pdf
SEMICONDUCTOR KTB1367TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTORGENERAL PURPOSE APPLICATION. ACFEATURESDIM MILLIMETERSSLow Collector-Emitter Saturation Voltage_A 10.0 + 0.3_+B 15.0 0.3E: VCE(sat)=-2.0V(Max.).C _2.70 0.3+D 0.76+0.09/-0.05Complementary to KTD2059._E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_+J 13.6 0.5L
ktb1366.pdf
isc Silicon PNP Power Transistor KTB1366DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOCollector Power Dissipation-: P = 25 W@ T = 25C CLow Collector Saturation Voltage-: V = -1.0V(Max)@ (I = -2A, I = -0.2A)CE(sat) C BComplement to Type KTD2058Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATI
ktb1367.pdf
isc Silicon PNP Power Transistor KTB1367DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOCollector Power Dissipation-: P = 30W@ T = 25C CLow Collector Saturation Voltage-: V = -2.0V(Max)@ (I = -4A, I = -0.4A)CE(sat) C BComplement to Type KTD2059Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATI
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050