KTD1003B - Даташиты. Аналоги. Основные параметры

SEMICONDUCTOR KTD1003 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. A C FEATURES G H High DC Current Gain L M hFE=800 3200. (VCE=5.0V, IC=300mA). Wide Area of Safe Operation. N Low Collector Saturation Voltage D D VCE(sat)=0.17V (IC=500mA, IB=5.0mA). K DIM MILLIMETERS F F A 4.70 MAX _ + B 2.50 0.20 C 1.70 MAX D 0.45+0.15/-0.10 1

SEMICONDUCTOR KTD1047 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q B K FEATURES Complementary to KTB817. Recommended for 60W Audio Frequency DIM MILLIMETERS Amplifier Output Stage. A 15.9 MAX B 4.8 MAX _ C 20.0 + 0.3 _ D 2.0 + 0.3 D d 1.0+0.3/-0.25 E 2.0 F 1.0 MAXIMUM RATING (Ta=25 ) G 3.3 MAX d H 9.0 CHARACTERISTIC SYMBOL RATIN

SEMICONDUCTOR KTD1047B TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A FEATURES Q B N O K Complementary to KTB817B. DIM MILLIMETERS Recommended for 60W Audio Frequency _ A + 15.60 0.20 _ B 4.80 + 0.20 Amplifier Output Stage. _ C 19.90 + 0.20 _ D 2.00 0.20 + _ d + 1.00 0.20 _ E + 3.00 0.20 _ F 3.80 + 0.20 _ G 3.50 + 0.20 D _

SEMICONDUCTOR KTD1028 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURES High DC Current Gain hFE=800 3200 (VCE=5.0V, IC=300mA). Wide Area of Safe Operation. Low Collector Saturation Voltage. VCE(sat)=0.17V (IC=500mA, IB=5.0mA). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Vo