All Transistors. KTD1003B Datasheet

 

KTD1003B Datasheet, Equivalent, Cross Reference Search


   Type Designator: KTD1003B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 250 MHz
   Forward Current Transfer Ratio (hFE), MIN: 1200
   Noise Figure, dB: -
   Package: SOT89

 KTD1003B Transistor Equivalent Substitute - Cross-Reference Search

   

KTD1003B Datasheet (PDF)

 7.1. Size:398K  kec
ktd1003.pdf

KTD1003B KTD1003B

SEMICONDUCTOR KTD1003TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. A CFEATURESGH High DC Current GainLM: hFE=800 3200. (VCE=5.0V, IC=300mA). Wide Area of Safe Operation.N Low Collector Saturation VoltageD D: VCE(sat)=0.17V (IC=500mA, IB=5.0mA).KDIM MILLIMETERSF FA 4.70 MAX_+B 2.50 0.20C 1.70 MAXD 0.45+0.15/-0.101

 9.1. Size:72K  kec
ktd1047.pdf

KTD1003B KTD1003B

SEMICONDUCTOR KTD1047TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH POWER AMPLIFIER APPLICATION.A Q BKFEATURES Complementary to KTB817. Recommended for 60W Audio Frequency DIM MILLIMETERSAmplifier Output Stage.A 15.9 MAXB 4.8 MAX_C 20.0 + 0.3_D 2.0 + 0.3Dd 1.0+0.3/-0.25E 2.0F 1.0MAXIMUM RATING (Ta=25 )G 3.3 MAXdH 9.0CHARACTERISTIC SYMBOL RATIN

 9.2. Size:365K  kec
ktd1047b.pdf

KTD1003B KTD1003B

SEMICONDUCTOR KTD1047BTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH POWER AMPLIFIER APPLICATION. AFEATURES Q BNO KComplementary to KTB817B.DIM MILLIMETERSRecommended for 60W Audio Frequency _A +15.60 0.20_B4.80 + 0.20Amplifier Output Stage._C 19.90 + 0.20_D 2.00 0.20+_d +1.00 0.20_E +3.00 0.20_F 3.80 + 0.20_G 3.50 + 0.20D _

 9.3. Size:307K  kec
ktd1028.pdf

KTD1003B KTD1003B

SEMICONDUCTOR KTD1028TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. FEATURESHigh DC Current Gain: hFE=800 3200 (VCE=5.0V, IC=300mA).Wide Area of Safe Operation. Low Collector Saturation Voltage. : VCE(sat)=0.17V (IC=500mA, IB=5.0mA).MAXIMUM RATING (Ta=25 )CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage 60 VVCEOCollector-Emitter Vo

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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