MITSUBISHI HVIGBT MODULESCM1800HC-34HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1800HC-34H IC ................................................................ 1800A VCES ....................................................... 1700V Insulated Type 1-element in a Pack AISiC Baseplate Soft Reverse Recover

CM1000DXL-24SPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBT www.pwrx.comNX-Series Module1000 Amperes/1200 VoltsABG CDJEKL FAM AMK AHAMAT AU AU AV AUAJAL63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41LAEYMX(4 PLACES)40 AMAK391R Q383736DETAIL "A"ZS35T342

CM150DX-34SAPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBT www.pwrx.comNX-Series Module150 Amperes/1700 VoltsADH EJFKGAKAZ ALL YAG9 8AQAJARASU AB (4 PLACES) ACT 10 7DETAIL "C"M ADP AMN BAPAF (4 PLACES) 611SDETAIL "A"R1 2 3 4 5AE DETAIL "A"AMZ AA AYVQ Description:Y ANY

CM1200DC-34NPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBTMODwww.pwrx.comHVIGBT Module1200 Amperes/1700 VoltsADDUK (4 TYP)42QFBC EY3 1Description:E1 Z E2Powerex IGBTMOD Modules AA VG1 G2 M (3 TYP) are designed for use in switching Wapplications. Each module consists C1 C2of two IGBT Transistors in

CM150DX-24APowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272Dual IGBTMOD NX-Series Module150 Amperes/1200 VoltsADEJ F JY(4 PLACES)G ADAEHAF46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25Q47 24S TUAA BZ ABR48 23S TUQDETAIL "B"AG1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22Desc

MITSUBISHI HVIGBT MODULESCM1600HC-34HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1600HC-34H IC ................................................................ 1600A VCES ....................................................... 1700V Insulated Type 1-element in a Pack AISiC Baseplate Soft Reverse Recover

CM1200HCB-34N HIGH POWER SWITHCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM2400HCB-34N IC 1200 A VCES

MITSUBISHI HVIGBT MODULESCM1200HA-66HHIGH POWER SWITCHING USEHVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HA-66H IC................................................................ 1200A VCES ....................................................... 3300V Insulated Type 1-element in a packAPPLICATIONInverters, Converters, DC choppers, Ind

CM100DU-12FPowerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignDual IGBTMOD100 Amperes/600 VoltsAN DP - NUTS (3 TYP)TC MEASURED POINTYEC2E1 E2 C1WQ (2FPLACES)X GBFDescription:Powerex IGBTMOD Modules M K K Jare designed for use in switching Rapplications. Each module con-H (4PLACES)sis

Green PackageTO-92 PTM15003T NPN Silicon Power Transistor 1.5 Amperes / 1.1 Watts Switch Mode series NPN silicon Power Transistor 1 2 - High voltage, high speed power switching 3 - Suitable for switching regulator, inverters motor controls 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25 unless otherwise noted CHARACTERISTICS SYMBOL RATING UNIT Coll

MITSUBISHI HVIGBT MODULESCM1200DB-34NHIGH POWER SWITCHING USE4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200DB-34N IC ................................................................ 1200A VCES ....................................................... 1700V Insulated Type 2-element in a Pack Cu Baseplate Trench Gate IGBT : CSTB

MITSUBISHI IGBT MODULESCM10MD-24HMEDIUM POWER SWITCHING USEINSULATED TYPECM10MD-24HIC ..................................................................... 10AVCES ......................................................... 1200VInsulated TypeCIB Module3 Inverter+3 Converter+BrakeUL RecognizedYellow Card No. E80276 (N)File No. E80271APPLICATIONAC & DC mot

CM150EXS-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current IC .................................... 1 5 0 A Collector-emitter voltage V ...................... 1 2 0 0 V CESMaximum junction temperature T .............. 1 7 5 C j maxFlat base Type Copper base plate (non-plating) Tin plating pin terminals RoHS Directive co

CM100DU-24FPowerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignDual IGBTMOD100 Amperes/1200 VoltsAN DP - NUTS (3 TYP)TC MEASURED POINTYEC2E1 E2 C1WQ (2 FPLACES)X GBFDescription:Powerex IGBTMOD Modules M K K Jare designed for use in switching Rapplications. Each module con-H (4PLACES)sis

MITSUBISHI HVIGBT MODULESCM1200HB-66HHIGH POWER SWITCHING USE2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HB-66H IC................................................................ 1200A VCES ....................................................... 3300V Insulated Type 1-element in a packAPPLICATIONInverters, Converters, DC c

CM150RX-12APowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272Six IGBTMOD + BrakeNX-Series Module150 Amperes/600 VoltsANAHAL AL ALAL AL ALAM AM AMAPAK AKAM AMAJ AJADEATRFAQAD H ARGAE AS34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13JDETAIL "A"AUALAA(4 PLACES) 1235R Q11P10N M L K B

CM150DU-24FPowerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignDual IGBTMOD150 Amperes/1200 VoltsAT - (4 TYP.)DTC MEASURED POINTU (4 PLACES)G2HE2CJB E LCMC2E1 E2 C1E1HG1Description:GPowerex IGBTMOD Modules Q Q P NS - NUTS are designed for use in switching (3 TYP)applications. Each m

MITSUBISHI HVIGBT MODULESCM1200HC-50HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HC-50H IC ................................................................ 1200A VCES ....................................................... 2500V Insulated Type 1-element in a Pack AISiC BaseplateAPPLICATIONTraction

CM100RL-12NFPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Six IGBTMOD + Brakewww.pwrx.comNF-Series Module100 Amperes/600 VoltsE AF DM G H J JKN8 1 1 1 1C BCN UP VP WPP NAA ABKB U V WQUPLT Description:K KK KPowerex IGBTMOD Modules S R R Rare designed for use in switching applications. Each module K

MITSUBISHI IGBT MODULESCM1400DU-24NFHIGH POWER SWITCHING USECM1400DU-24NF IC ................................................................ 1400A VCES ......................................................... 1200V Insulated Type 2-elements in a packAPPLICATIONUPS & General purpose inverters, etcOUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mmA,B HO

MITSUBISHI HVIGBT MODULESCM1200HC-66HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HC-66H IC ................................................................ 1200A VCES ....................................................... 3300V Insulated Type 1-element in a Pack AISiC BaseplateAPPLICATIONTraction

GWM13S65Y POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to withstand SJ MOS high energy in the avalanche mode and switch efficiently. This Higher Current Rating new high energy device also offers a drain-to-source diode Lower Rds(on) with fast recovery time. Designed for high voltage, high speed Lower Capacitances switchin

MITSUBISHI IGBT MODULESCM150E3U-24FHIGH POWER SWITCHING USECM150E3U-24FIC ...................................................................150AVCES ......................................................... 1200VInsulated Type1-element in a packAPPLICATIONBrakeOUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm10893 0.25414 14 14Tc measured pointCMC2

CM1800HCB-34N HIGH POWER SWITHCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM2400HCB-34N IC 1800 A VCES

MITSUBISHI HVIGBT MODULESCM1200E4C-34NHIGH POWER SWITCHING USE4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200E4C-34N IC ................................................................ 1200A VCES ....................................................... 1700V Insulated Type 1-element in a Pack (for brake) AISiC Baseplate Trench

CM150DY-24NFPowerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Dual IGBTMODNF-Series Module150 Amperes/1200 VoltsTC MEASURED POINTTC MEASURED POINT(BASEPLATE)(BASEPLATE)AAF FF FE EE EG2G2E2 GE2 GBBJJN HN HC2E1 E2 C1 E1C2E1 E2 C1 E1G1 GG1 GDescription:Powerex IGBTMOD ModulesK K KK K KM NUTS

CM150DX-24SPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBT www.pwrx.comNX-Series Module150 Amperes/1200 VoltsARAPASADANAQEJ F JDETAIL "A"GSYH AE(4 PLACES)L AF46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25Q K47 24S TUAA BZ ABAZ R48 23S TUQDETAIL "B"AG1 2 3 4 5 6 7 8

CM150RL-12NFPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Six IGBTMOD + Brakewww.pwrx.comNF-Series Module150 Amperes/600 VoltsE AF DM G H J JKN8 1 1 1 1C BCN UP VP WPP NAA ABKB U V WQUPLDescription:TK KK KPowerex IGBTMOD Modules S R R Rare designed for use in switching applications. Each module

MITSUBISHI IGBT MODULESCM150DU-24NFHHIGH POWER SWITCHING USECM150DU-24NFHIC ...................................................................150AVCES ......................................................... 1200VInsulated Type2-elements in a packAPPLICATIONHigh frequency switching use (30kHz to 60kHz).Gradient amplifier, Induction heating, power supply, etc.OUTL

CM150TL-24NFPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Six IGBTMODwww.pwrx.comNF-Series Module150 Amperes/1200 VoltsADE F H H EG G G MKNLW V UEV (6 PLACES)ABCNCNB G1 8BX8CNGACXJ1 1 1P GDescription:WPWP VP UPPowerex IGBTMOD Modules Eare designed for use in switching R S S Kap

CM100TU-24FPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignSix IGBTMOD100 Amperes/1200 VoltsJT (4 TYP.)KS - NUTS (5 TYP)KRCMN PP GUP EUP GVP EVP GWP EWPL N L N LB EQMGUN EUN GVN EVN GWN EWNTC TC MEASURING MEASURINGU V WPOINT POINTDescription:J JPowerex IGBTMOD ModulesLLLare designe

CM1800DY-34SPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual Half-Bridge www.pwrx.comIGBT HVIGBT Series Module1800 Amperes/1700 VoltsAAN ASAPAQ H (12 PLACES)XARG YE2 G2 C2F J (18 PLACES)FPLSE2 E2 LC2E1D VC BC2E1C1 C1AALLKQ AVK K TE FW ABF G1 E1 C1P URAWFATAU ADNM (8 PLACES)AC

MITSUBISHI HVIGBT MODULESCM1200HG-66HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HG-66H IC ............................................................... 1200 A VCES ...................................................... 3300 V High Insulated Type 1-element in a Pack AISiC BaseplateA

CM100TU-12FPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignSix IGBTMOD100 Amperes/600 VoltsJT (4 TYP.)S - NUTS (5 TYP) KKRCMN PPGUP EUP GVP EVP GWP EWPL N L N LB EQMGUN EUN GVN EVN GWN EWNTC TC MEASURING MEASURINGPOINT U V W POINTDescription:J JPowerex IGBTMOD ModulesL N L N Lare desig

CM150TU-12FPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignSix IGBTMOD150 Amperes/600 VoltsJT (4 TYP.)KS - NUTS (5 TYP)KRCMN PP GUP EUP GVP EVP GWP EWPL N L N LB EQMGUN EUN GVN EVN GWN EWNTC TC MEASURING MEASURINGU V WPOINT POINTDescription:J JPowerex IGBTMOD ModulesL L Lare design

CM100DU-24NFHPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBTwww.pwrx.comNFH-Series Module100 Amperes/1200 VoltsTC MEASUREMENT POINTAN DM K KFEC2E1 E2 C1SB H GFRJP - NUTS (3 TYP) UQ - (2 TYP)Description:Powerex IGBT Modules are designed for use in high frequency applications; 30 kHz W W W Wfor hard switchi

CM150TX-24SPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Six IGBT www.pwrx.comNX-Series Module150 Amperes/1200 VoltsAEA ADAFEFKACGAAKK K K ABDETAIL "A"Q K K K CJ M M MZ53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31AJAKAL 54 30N K K55 29(4 PLACES) AHK KS56 2857 27R BAM L L

CM1800HC-34NPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272Single IGBTMODHVIGBT Module1800 Amperes/1700 VoltsADD UK (4 TYP)42 FBVCE3 1Description:Powerex IGBTMOD Modules Care designed for use in switching E GM (3 TYP)applications. Each module consists Wof one IGBT Transistor in a reverse-connected super-fast L

MITSUBISHI HVIGBT MODULESCM1200HC-34HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HC-34H IC ................................................................ 1200A VCES ....................................................... 1700V Insulated Type 1-element in a Pack AISiC Baseplate Soft Reverse Recover

RFM12P08

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPM1A800A120C5/DMPM1A800A120C5Motorola Preferred DevicePreliminary Data SheetHybrid Power Module800 AMP, 1200 VOLT HYBRID POWER MODULEThis module is designed for use in switching applications. Each moduleutilizes advanced insulated gate bipolar transistors (IGBT) in a singleconfiguration with a reverseconnected

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPM1A120A120C5/DMPM1A120A120C5Motorola Preferred DevicePreliminary Data SheetHybrid Power Module1200 AMP, 1200 VOLT HYBRID POWER MODULEThis module is designed for use in switching applications. Each moduleutilizes advanced insulated gate bipolar transistors (IGBT) in a singleconfiguration with a reverseconnecte

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

PHM18NQ15TTrenchMOS standard level FETRev. 02 20 August 2004 Product dataM3D8791. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features SOT96 (SO-8) footprint compatible Low thermal resistance Surface mounted package Low profile.1.3 Applications DC-to-DC converter primary sid

PHM15NQ20TTrenchMOS standard level FETRev. 03 11 September 2003 Product dataM3D8791. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features SOT96 (SO-8) footprint compatible Low thermal resistance Surface mounted package Low profile.1.3 Applications DC-to-DC primary side Porta

PHM12NQ20TTrenchMOS standard level FETRev. 01 30 January 2003 Preliminary data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PHM12NQ20T in SOT685-1 (QLPAK).1.2 Features SOT96 (SO-8) footprint compatible Low thermal resistance Surface mount package Low profile.

DISCRETE SEMICONDUCTORSDATA SHEETk, halfpageM3D087PZTM1101NPN transistor/Schottky-diodemodule1996 May 09Product specificationPhilips Semiconductors Product specificationNPN transistor/Schottky-diode module PZTM1101FEATURES DESCRIPTION Low output capacitance Combination of an NPN transistor and a Schottky barrier diode in a plasticSOT223 package. PNP complement: PZT

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D087PZTM1102PNP transistor/Schottky-diodemodule1996 May 09Product specificationFile under Discrete Semiconductors, SC01Philips Semiconductors Product specificationPNP transistor/Schottky-diode module PZTM1102FEATURES DESCRIPTION Low output capacitance Combination of a PNP transistor and a Schottky barrier diode i

AM1011-300RF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTING.LOW RF THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.400 x .600 2LFL (M207).P 325 W MIN. WITH 7.7 dB GAINOUT =hermetically sealed.1030/1090 MHZ OPERATIONBRANDINGORDER CODEAM1011-300AM1011-300PIN CONNECTION

AM1011-075RF & MICROWAVE TRANSISTORSL-BAND AVIONICS APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.10:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE .400 x .400 2LFL (S036)hermetically sealed.P = 75 W MIN. WITH 9.2 dB GAINOUTORDER CODE BRANDINGAM1011-075 1011-75DESCRIPTIONPIN CONNE

STGW25M120DF3 STGWA25M120DF3Trench gate field-stop IGBT, M series 1200 V, 25 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 25 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria

AM1011-070RF & MICROWAVE TRANSISTORSL-BAND AVIONICS APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.P = 70 W MIN. WITH 6.7 dB GAINOUT.400 x .400 2NLFL (S042)hermetically sealedORDER CODE BRANDINGAM1011-70 1011-70DESCRIPTIONPIN CONNECTIONThe AM1011-070

STGW40M120DF3 STGWA40M120DF3Trench gate field-stop IGBT, M series 1200 V, 40 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 40 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria

STGW25M120DF3 STGWA25M120DF3Trench gate field-stop IGBT, M series 1200 V, 25 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 25 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria

STGW15M120DF3 STGWA15M120DF3Trench gate field-stop IGBT, M series 1200 V, 15 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 15 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria

STGW40M120DF3 STGWA40M120DF3Trench gate field-stop IGBT, M series 1200 V, 40 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 40 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria

AM1214-300RF & MICROWAVE TRANSISTORSL-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.5:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.400 x .500 2LFL (S038).P = 270 W MIN. WITH 6.3 dB GAINOUThermetically sealedORDER CODE BRANDINGAM1214-300 1214-300PIN CONNECTIONDESCRIP

AM1517-012RF & MICROWAVE TRANSISTORSSATELLITE COMMUNICATIONS APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED. :1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.METAL/CERAMIC HERMETIC PACKAGE.P 12 W MIN. WITH 8.5 dB GAIN .400 x .400 2NLFL (S042)OUT =hermeticallysealedORDER CODE BRANDINGAM1517-012 1517-12PIN CONNECTIONDESCRIPTION

STGW15M120DF3 STGWA15M120DF3Trench gate field-stop IGBT, M series 1200 V, 15 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 15 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria

AM1011-500RF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.P 500 W MIN. WITH 8.5 dB MIN.OUT =GAIN.10:1 LOAD VSWR CAPABILITY @ 10S.,1% DUTY.SIXPAC HERMETIC METAL/CERAMICPACKAGE.EMITTER SITE BALLASTED OVERLAY.400 x .600 2LFL (M198)GEOMETRYhermetically sealed.REFRACTORY/GOLD METALLIZATION.LOW THERMAL RESISTANCE ORDER CODEBRANDINGAM1011-500.INTERNAL INPUT/OUT

AM1214-325RF & MICROWAVE TRANSISTORSL-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.5:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.400 x .500 2LFL (S038).POUT 325 W MIN. WITH 6.4 dB GAIN hermetically sealed=ORDER CODE BRANDINGAM1214-325 1214-325PIN CONNECTIONDESCRIPTI

AM1214-200RF & MICROWAVE TRANSISTORSL-BAND RADAR APPLICATIONSPRELIMINARY DATA.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.P 200 W MIN. WITH 7.0 dB GAINOUT =.400 x .500 2LFL (M205)hermetically sealedORDER CODE BRANDINGAM1214-200 1214-200PIN CONNECTIONDESCRIPTION

AM1011-400RF & MICROWAVE TRANSISTORSL-BAND AVIONICS APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.15:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.400 x .500 2LFL (S038).POUT 400 W MIN. WITH 8.0 dB GAIN=hermetically sealedORDER CODE BRANDINGAM1011-400 1011-400PIN CONNECTIONDESC

AM1214-100RF & MICROWAVE TRANSISTORSL-BAND RADAR APPLICATIONSPRELIMINARY DATA.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.P 100 W MIN. WITH 6.0 dB GAINOUT =.400 x .500 2LFL (S038)hermetically sealedORDER CODE BRANDINGAM1214-100 1214-100PIN CONNECTIONDESCRIPTION

AM1517-025RF & MICROWAVE TRANSISTORSSATELLITE COMMUNICATIONS APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED. :1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE .400 x .400 2NLFL (S042)hermetically sealed.P 25 W MIN. WITH 8.5 dB GAIN=OUTORDER CODE BRANDINGAM1517-025 1517-25PIN CON

STGW40M120DF3 STGWA40M120DF3Trench gate field-stop IGBT, M series 1200 V, 40 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 40 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria

STGW15M120DF3 STGWA15M120DF3Trench gate field-stop IGBT, M series 1200 V, 15 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 15 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria

AM1214-175RF & MICROWAVE TRANSISTORSL-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.3:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.400 x .500 2LFL (S038).POUT = 160 W MIN. WITH 7.3 dB GAINhermetically sealedORDER CODE BRANDINGAM1214-175 1214-175PIN CONNECTIONDESCRIPTI

TK40P03M1MOSFETs Silicon N-Channel MOS (U-MOS-H)TK40P03M1TK40P03M1TK40P03M1TK40P03M11. Applications1. Applications1. Applications1. Applications DC-DC Converters Desktop PCs2. Features2. Features2. Features2. Features(1) High-speed switching(2) Low gate charge: QSW = 5.7 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 8.3 m (typ.) (VGS = 10

TK50P03M1MOSFETs Silicon N-Channel MOS (U-MOS-H)TK50P03M1TK50P03M1TK50P03M1TK50P03M11. Applications1. Applications1. Applications1. Applications DC-DC Converters Desktop PCs2. Features2. Features2. Features2. Features(1) High-speed switching(2) Low gate charge: QSW = 8.2 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 5.8 m (typ.) (VGS = 10

TK40P04M1MOSFETs Silicon N-Channel MOS (U-MOS-H)TK40P04M1TK40P04M1TK40P04M1TK40P04M11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Low gate charge: QSW = 7.4 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 8.5 m (t

TK20P04M1MOSFETs Silicon N-Channel MOS (U-MOS-H)TK20P04M1TK20P04M1TK20P04M1TK20P04M11. Applications1. Applications1. Applications1. Applications DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) High-speed switching(2) Low gate charge: QSW = 3.7 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 19 m

SM12G45,SM12J45,SM12G45A,SM12J45A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM12G45,SM12J45,SM12G45A,SM12J45A AC POWER CONTROL APPLICATIONS Unit: mm Repetitive Peak Off-State Voltage : VDRM = 400, 600V R.M.S On-State Current : I = 12A T (RMS) High Commutating (dv / dt) MAXIMUM RATINGS CHARACTERISTIC SYMBOL RATING UNITSM12G45 400 SM12G45A Repeti

GT40M101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT40M101 Unit: mmHIGH POWER SWITCHING APPLICATIONS High input impedance High speed : tf = 0.4s (Max.) Low saturation voltage : VCE(sat) = 3.4V (Max.) Enhancement mode type MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNITCollector-Emitter Voltage VCES 900 VGate-Emitter Voltage V

TK45P03M1MOSFETs Silicon N-Channel MOS (U-MOS-H)TK45P03M1TK45P03M1TK45P03M1TK45P03M11. Applications1. Applications1. Applications1. Applications DC-DC Converters Desktop Computers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Low gate charge: QSW = 8.0 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 6.5 m (typ.) (VG

MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TPM1919-60 TECHNICAL DATA FEATURES HIGH POWER PARTIALLY MATCHED TYPE P1dB=48.0dBm at 1.96GHz HIGH GAIN HERMETICALLY SEALED PACKAGE G1dB=13.0dB at 1.96GHz RF PERFORMANCE SPECIFICATIONS ( Ta= 25C ) CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX.Output Power at 1dB Gain P1dB dBm 47.0 48.0 Compression

RFM12U7X TOSHIBA Field Effect Transistor Silicon N Channel MOS Type RFM12U7X VHF- and UHF-band Amplifier Applications Unit: mm(Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use. Do not use these TOSHIBA products listed in t

TK50P04M1MOSFETs Silicon N-Channel MOS (U-MOS-H)TK50P04M1TK50P04M1TK50P04M1TK50P04M11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Low gate charge: QSW = 9.4 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 6.7 m (t

TK60P03M1MOSFETs Silicon N-Channel MOS (U-MOS-H)TK60P03M1TK60P03M1TK60P03M1TK60P03M11. Applications1. Applications1. Applications1. Applications DC-DC Converters Desktop Computers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Low gate charge: QSW = 13 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 4.6 m (typ.) (VGS

Preliminary DatasheetRJH60M1DPP-M0 R07DS0528EJ0100600 V - 8 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techn

Preliminary DatasheetRJH60M1DPE R07DS0529EJ0100600 V - 8 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer technolo

Preliminary Datasheet RJK03M1DPA 30V, 50A, 2.3mmax. R07DS0765EJ0200N Channel Power MOS FET Rev.2.00High Speed Power Switching Feb 08, 2013Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DE-A(Package nam

Preliminary Datasheet RJH60M1DPE R07DS0529EJ0300600V - 8A - IGBT Rev.3.00Application: Inverter May 25, 2012Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer technolo

Preliminary Datasheet RJH60M1DPP-M0 R07DS0528EJ0300600V - 8A - IGBT Rev.3.00Application: Inverter May 25, 2012Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (75 ns typ.) in one package Trench gate and thin wafer techno

IRLM110AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.44 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.5 A Improved Gate Charge Extended Safe Operating AreaSOT-223 Lower Leakage Current : 10 A(Max.) @ VDS = 100V2 Lower RDS(ON) : 0.336 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum R

SSM1N45B 450V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.5A, 450V, RDS(on) = 4.25 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.5 nC)planar, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has been especially tailored to 100% avalanche te

IRFM110AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.5 A Improved Gate Charge Extended Safe Operating AreaSOT-223 Lower Leakage Current : 10 A (Max.) @ VDS = 100V2 Lower RDS(ON) : 0.289 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbo

IRFM120AAdvanced Power MOSFETIEEE802.3af CompatibleFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.3 A Improved Gate Charge Extended Safe Operating AreaSOT-223 Lower Leakage Current : 10 A (Max.) @ VDS = 100V2 Lower RDS(ON) : 0.155 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum

IRFM120AAdvanced Power MOSFETIEEE802.3af CompatibleFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.3 A Improved Gate Charge Extended Safe Operating AreaSOT-223 Lower Leakage Current : 10 A (Max.) @ VDS = 100V2 Lower RDS(ON) : 0.155 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum

FSAM15SH60ASPMTM (Smart Power Module)General Description FeaturesFSAM15SH60A is an advanced smart power module UL Certified No. E209204(SPM) that Fairchild has newly developed and designed to 600V-15A 3-phase IGBT inverter bridge including controlprovide very compact and high performance ac motorICs for gate driving and protection drives mainly targeting high speed low-pow

FSAM10SH60ASPMTM (Smart Power Module)General Description FeaturesFSAM10SH60A is an advanced smart power module UL Certified No. E209204(SPM) that Fairchild has newly developed and designed to 600V-10A 3-phase IGBT inverter bridge including controlprovide very compact and high performance ac motorICs for gate driving and protection drives mainly targeting high speed low-pow

IRLM120AAdvanced Power MOSFETFEATURESBVDSS = 100 Vn Avalanche Rugged TechnologyRDS(on) = 0.22 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = 2.3 An Improved Gate Chargen Extended Safe Operating AreaSOT-223n Lower Leakage Current : 10 A(Max.) @ VDS = 100V2n Lower RDS(ON) : 0.176 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum Ratings

DATA SHEETNPN SILICON RF TWIN TRANSISTORPA859TDNPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)IN A 6-PIN LEAD-LESS MINIMOLDFEATURES Low voltage operation 2 different built-in transistors (2SC5737, 2SC5676)Q1: Low noise transistorNF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHzQ2: Low phase distortion transistor suited for OSC applicationsfT = 5.

NPN SILICON GERMANIUM RF TRANSISTORNESG2101M16NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high-gain amplification PO (1 dB) = 21 dBm TYP. @ VCE = 3.6 V, IC (set) = 10 mA (RF OFF), f = 2 GHz

NEC's NPN SILICON TRANSISTORNE685M13OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: Small transistor outline 1.0 X 0.5 X 0.5 mm0.70.05(Bottom View) Low profile / 0.50 mm package height0.5+0.1 0.050.3 Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT:fT = 12 GHz2 LOW NOISE FIGU

DATA SHEETNPN SILICON RF TWIN TRANSISTORPA891TDNPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS)IN A 6-PIN LEAD-LESS MINIMOLDFEATURES Built-in low phase distortion transistor suited for OSC operationfT = 5.0 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz Built-in 2 transistors (2 2SC5600) 6-pin lead-less minimold packageBUILT-IN TRA

NPN SILICON GERMANIUM C RF TRANSISTORNESG4030M14NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) FEATURES The device is an ideal choice for low noise, high-gain amplification NF = 1.1 dB TYP., Ga = 11.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz Maximum stable power gain: MSG = 15 dB TYP. @ VCE = 2 V, IC = 20 mA,

DATA SHEETNPN SILICON RF TWIN TRANSISTORPA855TDNPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)IN A 6-PIN LEAD-LESS MINIMOLDFEATURES Low voltage operation 2 different built-in transistors (2SC5737, 2SC5745)Q1: Low noise transistorNF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHzQ2: Low phase distortion transistor suited for OSC operationfT = 5.5 G

NEC's NPN SILICON TRANSISTOR NE851M13OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: Small transistor outline0.70.05 1.0 X 0.5 X 0.5 mm(Bottom View) Low profile / 0.50 mm package height0.5+0.1 0.050.3 Flat lead style for better RF performance IDEAL FOR 3 GHz OSCILLATORS LOW PHASE NOISE23 L

NEC's NPN SILICON TRANSISTOR NE681M13OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: Small transistor outline +0.1+0.10.50.050.15 0.31.0 X 0.5 X 0.5 mm0.05 Low profile / 0.50 mm package height12 Flat lead style for better RF performance0.35 HIGH GAIN BANDWIDTH PRODUCT:+0.1+0.11.0 0.70.0

PRELIMINARY DATA SHEETNPN SILICON TRANSISTOR NE688M13OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: Small transistor outline +0.1+0.10.50.050.150.05 0.31.0 X 0.5 X 0.5 mm Low profile / 0.50 mm package height12 Flat lead style for better RF performance0.35 HIGH GAIN BANDWIDTH PRODUCT:+0.1+0.1

DATA SHEETNPN SILICON RF TWIN TRANSISTORPA895TSNPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES Built-in low voltage operation, low phase distortion transistor suited for OSC applications fT = 4.5 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz Built-in 2 transistors (2 2SC5800) 6-pin super lead-les

DATA SHEETNPN SILICON RF TWIN TRANSISTORPA841TDNPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)IN A 6-PIN LEAD-LESS MINIMOLDFEATURES Low voltage operation 2 different built-in transistors (2SC5435, 2SC5600)Q1: Built-in high-gain transistorfT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHzQ2: Built-in low phase distortion

NPN SILICON TRANSISTOR NE894M13FEATURES OUTLINE DIMENSIONS (Units in mm)PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: Small transistor outline 0.70.05 1.0 X 0.5 X 0.5 mm (Bottom View) Low profile / 0.50 mm package height 0.5+0.1 0.050.3 Flat lead style for better RF performance IDEAL FOR > 3 GHz OSCILLATORS LOW NOISE, HIGH GAIN23

NPN SILICON GERMANIUM RF TRANSISTORNESG2021M16NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f

NPN SILICON HIGHNE662M16FREQUENCY TRANSISTORFEATURES HIGH GAIN BANDWIDTH: fT = 25 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz NEW LOW PROFILE M16 PACKAGE: Flat Lead Style with a height of just 0.50mmDESCRIPTIONNEC's NE662M16 is fabricated using NEC's UHS0 25 GHz fTM16wafer process. With a typical transition frequ

NPN SILICON GERMANIUM RF TRANSISTORNESG3032M14NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PACKAGE) FEATURES The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz

PRELIMINARY DATA SHEETNPN SILICON TRANSISTOR NE681M13OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: Small transistor outline +0.1+0.10.50.050.150.05 0.31.0 X 0.5 X 0.5 mm Low profile / 0.50 mm package height12 Flat lead style for better RF performance0.35 HIGH GAIN BANDWIDTH PRODUCT:+0.1+0.1

DATA SHEETNPN SILICON RF TWIN TRANSISTORPA863TDNPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)IN A 6-PIN LEAD-LESS MINIMOLDFEATURES Low voltage operation 2 different built-in transistors (2SC5436, 2SC5800)Q1: Built-in high gain transistorfT = 12.0 GHz TYP., S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHzQ2: Built-in low phase distortion

NPN SILICON GERMANIUM RF TRANSISTORNESG2031M16NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.2 GHz

NPN SILICON GERMANIUM RF TRANSISTORNESG3031M14NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) FEATURES The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz NF = 0.95 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz

DATA SHEETNPN SILICON RF TWIN TRANSISTORPA860TDNPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)IN A 6-PIN LEAD-LESS MINIMOLDFEATURES Low voltage operation 2 different built-in transistors (2SC5435, 2SC5786)Q1: High-gain transistorfT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHzQ2: Low phase distortion transistor suitab

NE687M13NEC's NPN SILICON TRANSISTOROUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: Small transistor outline0.70.05 1.0 X 0.5 X 0.5 mm(Bottom View) Low profile / 0.50 mm package height0.5+0.1 0.050.3 Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT:fT = 14 GHz23 LOW NOISE F

DATA SHEETNPN SILICON RF TWIN TRANSISTORPA861TDNPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)IN A 6-PIN LEAD-LESS MINIMOLDFEATURES Low voltage operation 2 different built-in transistors (2SC5436, 2SC5786)Q1: High-gain transistorfT = 12.0 GHz TYP., S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHzQ2: Low phase distortion transistor suitab

DATA SHEETNPN SILICON RF TWIN TRANSISTORPA895TDNPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS)IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE)FEATURES Built-in low phase distortion transistor suited for OSC applicationsfT = 4.5 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz Built-in 2 transistors (2 2SC5800) 6-pin lead-less minimol

DATA SHEETNPN SILICON RF TWIN TRANSISTORPA854TDNPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)IN A 6-PIN LEAD-LESS MINIMOLDFEATURES Low voltage operation 2 different built-in transistors (2SC5435, 2SC5745)Q1: High gain transistorfT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHzQ2: Low phase distortion transistor suited

DATA SHEETNPN SILICON RF TWIN TRANSISTORPA851TDNPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)IN A 6-PIN LEAD-LESS MINIMOLDFEATURES Low voltage operation 2 different built-in transistors (2SC5737, 2SC5736)Q1: Low noise transistorNF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHzQ2: Low phase distortion transistor suited for OSC applicationsfT = 5.

NPN SILICON GERMANIUM RF TRANSISTORNESG3033M14NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) FEATURES The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz SiG

DATA SHEETNPN SILICON RF TWIN TRANSISTORPA892TDNPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS)IN A 6-PIN LEAD-LESS MINIMOLDFEATURES Ideal for low noise high-gain amplification and oscillation at 3 GHz or overNF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz Maximum available power gain: MAG = 12.5 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz High fT: fT =

DATA SHEETNPN SILICON RF TWIN TRANSISTORPA862TDNPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)IN A 6-PIN LEAD-LESS MINIMOLDFEATURES Low voltage operation 2 different built-in transistors (2SC5435, 2SC5800)Q1: Built-in high gain transistorfT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHzQ2: Built-in low phase distortion

DATA SHEETNPN SILICON RF TWIN TRANSISTORPA873TDNPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS)IN A 6-PIN LEAD-LESS MINIMOLDFEATURES Built-in low phase distortion transistor suited for OSC applicationsfT = 4.5 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz Built-in 2 transistors (2 2SC5800) 6-pin lead-less minimold packageBUILT-IN

PRELIMINARY DATA SHEETNPN SILICON TRANSISTOR NE856M13OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: Small transistor outline +0.1+0.10.50.051.0 X 0.5 X 0.5 mm 0.150.05 0.3 Low profile / 0.50 mm package height12 Flat lead style for better RF performance0.35 LOW NOISE FIGURE:+0.1+0.11.0 0.7

DATA SHEETNPN SILICON RF TWIN TRANSISTORPA873TSNPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES Built-in low voltage operation, low phase distortion transistor suited for OSC applications fT = 4.5 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz Built-in 2 transistors (2 2SC5800) 6-pin super lead-les

DATA SHEETNPN SILICON RF TWIN TRANSISTORPA828TDNPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES Built-in low phase distortion transistor suited for OSC applications fT = 9.0 GHz TYP., S21e2 = 7.5 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz Built-in 2 transist

BUK9M10-30EN-channel 30 V, 10 m logic level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetit

BUK9M12-60EN-channel 60 V, 12 m logic level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetit

BUK9M15-60EN-channel 60 V, 15 m logic level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetit

BUK7M15-40HN-channel 40 V, 15.0 m standard level MOSFET in LFPAK3329 January 2019 Product data sheet1. General descriptionAutomotive qualified standard level N-channel MOSFET in an LFPAK33 package using Trench 9TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in highperformance automotive applications.2. Features and benefits Fully aut

BUK9M14-40EN-channel 40 V, 14 m logic level MOSFET in LFPAK3313 May 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive av

BUK9M19-60EN-channel 60 V, 19 m logic level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetit

BUK9M120-100EN-channel 100 V, 120 m logic level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Rep

BUK7M15-60EN-channel 60 V, 15 m standard level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK33 (Power33) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 Compliant R

BUK9M17-30EN-channel 30 V, 17 m logic level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetit

BUK9M11-40EN-channel 40 V, 11 m logic level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetit

BUK7M11-40HN-channel 40 V, 11.0 m standard level MOSFET in LFPAK3329 January 2019 Product data sheet1. General descriptionAutomotive qualified standard level N-channel MOSFET in an LFPAK33 package using Trench 9TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in highperformance automotive applications.2. Features and benefits Fully aut

BUK7M19-60EN-channel 60 V, 19 m standard level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK33 (Power33) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 Compliant R

BUK9M15-40HN-channel 40 V, 15.0 m logic level MOSFET in LFPAK3329 January 2019 Product data sheet1. General descriptionAutomotive qualified logic level N-channel MOSFET in an LFPAK33 package using Trench 9TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in highperformance automotive applications.2. Features and benefits Fully automotiv

BUK7M17-80EN-channel 80 V, 17 m standard level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK33 (Power33) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 Compliant R

BUK9M156-100EN-channel 100 V, 156 m logic level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Rep

BUK7M10-40EN-channel 40 V, 10 m standard level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK33 (Power33) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 Compliant R

BUK7M12-40EN-channel 40 V, 12 m standard level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK33 (Power33) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 Compliant R

BUK9M11-40HN-channel 40 V, 11.0 m logic level MOSFET in LFPAK3329 January 2019 Product data sheet1. General descriptionAutomotive qualified logic level N-channel MOSFET in an LFPAK33 package using Trench 9TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in highperformance automotive applications.2. Features and benefits Fully automotiv

BUK7M12-60EN-channel 60 V, 12 m standard level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK33 (Power33) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 Compliant R

IRLM110AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.44 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.5 A Improved Gate Charge Extended Safe Operating AreaSOT-223 Lower Leakage Current : 10 A (Max.) @ VDS = 100V2 Lower RDS(ON) : 0.336 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbo

Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V2 Lower RDS(ON) : 0.289 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V2 Lower RDS(ON) : 0.155 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

IRLM120AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.22 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.3 A Improved Gate Charge Extended Safe Operating AreaSOT-223 Lower Leakage Current : 10 A (Max.) @ VDS = 100V2 Lower RDS(ON) : 0.176 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbo

BSM 100 GAL 120 DN2IGBT Power Module Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 100 GAL 120 DN2 1200V 150A HALF BRIDGE GAL 2 C67076-A2012-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 120

Data Sheet4V Drive Nch + Pch MOSFET SH8M14 Structure Dimensions (Unit : mm)SOP8Silicon N-channel MOSFET/Silicon P-channel MOSFET(8) (5)Features1) Low on-resistance.2) High power package(SOP8).(1) (4)3) Low voltage drive(4V drive). ApplicationSwitching Packaging specifications Inner circuitPackage Taping(8) (7) (6) (5)TypeCode TBBasic o

Data Sheet4V Drive Nch + Pch MOSFETQS8M11 Structure Dimensions (Unit : mm)TSMT8Silicon N-channel MOSFET/(8) (7) (6) (5)Silicon P-channel MOSFETFeatures(1) (2) (3) (4)1) Low on-resistance.2) High power package(TSMT8).3) Low voltage drive(4V drive).Abbreviated symbol : M11 ApplicationSwitching Packaging specifications Inner circuitPackage Tapi

Data Sheet4V Drive Nch + Pch MOSFET TT8M11 Structure Dimensions (Unit : mm)Silicon N-channel MOSFET/TSST8Silicon P-channel MOSFET(8) (7) (6) (5)Features1) Low on-resistance.(1) (2) (3) (4)2) Low voltage drive(4V drive).3) Small surface mount package(TSST8).Abbreviated symbol : M11 ApplicationSwitching Packaging specificationsInner circuit(8)

Data Sheet4V Drive Nch + Pch MOSFET QS8M13 Structure Dimensions (Unit : mm)TSMT8Silicon N-channel MOSFET/(8) (7) (6) (5)Silicon P-channel MOSFETFeatures1) Low on-resistance.(1) (2) (3) (4)2) High power package(TSMT8).3) Low voltage drive(4V drive).Abbreviated symbol : M13 ApplicationSwitching Inner circuit(8) (7) (6) (5) Packaging specificati

Data Sheet4V Drive Nch + Pch MOSFET MP6M14 Structure Dimensions (Unit : mm)Silicon N-channel MOSFET/MPT6(Duel)Silicon P-channel MOSFET(6) (5) (4)Features1) Low on-resistance.2) Low voltage drive(4V drive).(1) (2) (3) ApplicationSwitching Packaging specifications Inner circuitPackage Taping(6) (5) (4)TypeCode TR1Basic ordering unit (

Data Sheet1.2V Drive Nch + Pch MOSFET VT6M1 Structure Dimensions (Unit : mm)Silicon N-channel MOSFET/VMT6Silicon P-channel MOSFET1.2 0.5(6) (5) (4)Features1) Low on-resistance.(1) (2) (3)2) Small package(VMT6).0.16 0.133) Low voltage drive(1.2V drive). 0.4 0.40.80.1Abbreviated symbol : M01 ApplicationSwitching Packaging specifications In

Data Sheet4V Drive Nch + Pch MOSFET MP6M11 Structure Dimensions (Unit : mm)Silicon N-channel MOSFET/MPT6(Duel)Silicon P-channel MOSFET(6) (5) (4)Features1) Low on-resistance.2) Built-in G-S Protection Diode.(1) (2) (3)3) Small Surface Mount Package (MPT6). ApplicationSwitching Inner circuit(6) (5) (4)1 Packaging specificationsPackage Ta

Data Sheet4V Drive Nch + Pch MOSFET SH8M11 Structure Dimensions (Unit : mm)SOP8Silicon N-channel MOSFET/Silicon P-channel MOSFET(8) (5)Features1) Low on-resistance.2) High power package(SOP8).(1) (4)3) Low voltage drive(4V drive). ApplicationSwitching Packaging specifications Inner circuit(8) (7) (6) (5)Package TapingTypeCode TBBasic o

1.5V Drive Nch+Pch MOSFET US6M11 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET / TUMT6Silicon P-channel MOSFET Features 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive). 4) Built-in G-S Protection Diode. Abbreviated symbol : M11 Applications Inner circuit Switching (6) (5) (4)1 Packa

Data Sheet4V Drive Nch + Pch MOSFET SH8M12 StructureDimensions (Unit : mm)SOP8Silicon N-channel MOSFET/Silicon P-channel MOSFET(8) (5)Features1) Low on-resistance.2) High power package(SOP8).(1) (4)3) Low voltage drive(4V drive). ApplicationSwitchingInner circuit(8) (7) (6) (5) Packaging specificationsPackage Taping2 2(1) Tr1 Sou

US6M1 Transistors 4V+2.5V Drive Nch+Nch MOSFET US6M1 Structure Dimensions (Unit : mm) Silicon N-channel / P-channel MOSFET TUMT6 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TUMT6). Abbreviated symbol : M01 Application Power switching, DC / DC converter. Packaging specifications Equivalent circuit Package Tapi

Data Sheet4V Drive Nch + Pch MOSFETSH8M13 Structure Dimensions (Unit : mm)Silicon N-channel MOSFET/SOP8Silicon P-channel MOSFET(8) (5)Features1) Low on-resistance.2) Built-in G-S Protection Diode.(1) (4)3) Small Surface Mount Package (SOP8). ApplicationSwitching Packaging specifications Inner circuitPackage Taping(8) (7) (6) (5)TypeCode

Data Sheet4V Drive Nch + Pch MOSFETMP6M12 StructureDimensions (Unit : mm)Silicon N-channel MOSFET/MPT6(Duel)Silicon P-channel MOSFET(6) (5) (4)Features1) Low on-resistance.2) Built-in G-S Protection Diode.(1) (2) (3)3) Small Surface Mount Package (MPT6). ApplicationSwitchingInner circuit(6) (5) (4)1 Packaging specifications2Pac

Data Sheet4V Drive Nch + Pch MOSFET QS8M12 Structure Dimensions (Unit : mm)TSMT8Silicon N-channel MOSFET/(8) (7) (6) (5)Silicon P-channel MOSFETFeatures1) Low on-resistance.(1) (2) (3) (4)2) High power package(TSMT8).3) Low voltage drive(4V drive).Abbreviated symbol : M12 ApplicationSwitching Inner circuit(8) (7) (6) (5) Packaging specificati

1.5V Drive Nch + Pch MOSFET TT8M1 Structure Dimensions (Unit : mm)Silicon N-channel MOSFET/ TSST8Silicon P-channel MOSFET(8) (7) (6) (5)Features1) Low on-resistance.(1) (2) (3) (4)2) High power package (TSST8).3) Low voltage drive (1.5V drive). Abbreviated symbol :M01 ApplicationSwitching Packaging specifications Inner circuitPackage TapingType

SP8M10FRASP8M10Transistors AEC-Q101 Qualified4V Drive Nch+Pch MOSFETSP8M10FRASP8M10 Structure Dimensions (Unit : mm)Silicon N-channel / P-channel MOSFET SOP85.01.750.4(8) (5) Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). (1) (4)0.21.271pin mark Application Power switching, DC / DC converter.

SQM110N06-04Lwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) 60 TrenchFET Power MOSFETRDS(on) () at VGS = 10 V 0.0035 Package with Low Thermal ResistanceRDS(on) () at VGS = 4.5 V 0.0050 AEC-Q101 QualifieddID (A) 120 100 % Rg and UIS T

SUM110N04-05HVishay SiliconixN-Channel 40-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) Qg (Typ.) 175 C Junction TemperatureRoHS0.0053 at VGS = 10 V 40 95110COMPLIANT High Threshold Voltage at High TemperatureDTO-263GG D STop View SN-Channel MOSFETOrdering Information: SUM110N04-05H-E

SQM120N04-04www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.0035 TrenchFET Power MOSFETID (A) 120 Package with Low Thermal ResistanceConfiguration Single AEC-Q101 QualifieddD 100 % Rg and UIS Tested Co

SUM18N25-165Vishay SiliconixN-Channel 250-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) ID (A)rDS(on) () 175 C Junction TemperatureRoHS0.165 at VGS = 10 V 250 18COMPLIANT Low Thermal Resistance PackageDTO-263GG D STop ViewSOrdering Information: SUM18N25-165-E3 (Lead (Pb)-free) N-Channel MOSFETABSOLU

SQM120N02-1m3Lwww.vishay.comVishay SiliconixAutomotive N-Channel 20 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 20DefinitionRDS(on) () at VGS = 10 V 0.0013 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.0017 Package with Low Thermal ResistanceID (A) 120 100 % Rg and UIS TestedConfiguration Sin

SQM120N08-05www.vishay.comVishay SiliconixAutomotive N-Channel 75 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 75DefinitionRDS(on) () at VGS = 10 V 0.0048 TrenchFET Power MOSFETID (A) 120 Package with Low Thermal ResistanceConfiguration Single AEC-Q101 QualifieddD 100 % Rg and UIS TestedTO-263

New ProductSUM110P08-11Vishay SiliconixP-Channel 80-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)b Qg (Typ)RoHS0.0111 at VGS = - 10 V - 110 113 nC- 80COMPLIANTTO-263SGDrain Connected to TabG D STop ViewDOrdering Information: SUM110P08-11 (Lead (Pb)-free) P-Channel MOSFETABSOLUTE MAXIMUM RATINGS TA = 25 C

New ProductSUM110N04-2m1PVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS0.0021 at VGS = 10 V 110COMPLIANT 40 240 nC0.0024 at VGS = 4.5 V 110APPLICATIONS Synchronous Rectification Power SuppliesDTO-263 GG D S Top View S

SQM110P06-8m9Lwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 60 Package with Low Thermal ResistanceRDS(on) () at VGS = - 10 V 0.0089 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.0132 AEC-Q101 QualifieddID (A) - 110 Material categorization:Configuratio

SQM120N06-3m5Lwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0035 AEC-Q101 QualifieddRDS(on) () at VGS = 4.5 V 0.0039 100 % Rg and UIS TestedID (A) 120 Material categorization:Configuration Single

SQM100N04-3m5www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0030 100 % Rg and UIS TestedID (A) 100 AEC-Q101 QualifieddConfiguration Single Material categorization:DFor definitions of compliance ple

SQM100N10-10www.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 100 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0105 AEC-Q101 QualifieddRDS(on) () at VGS = 4.5 V 0.0120 100 % Rg and UIS TestedID (A) 100 Material categorization:Configuration Sin

SQM120N03-1m5LVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 30DefinitionRDS(on) () at VGS = 10 V 0.0015 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.0020 Package with Low Thermal ResistanceID (A) 120 100 % Rg and UIS TestedConfiguration Single AEC-Q10

SQM120P04-04Lwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 40DefinitionRDS(on) () at VGS = - 10 V 0.0040 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.0060 Package with Low Thermal ResistanceID (A) - 120 AEC-Q101 QualifieddConfiguration

SQM110N04-03www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) 40 TrenchFET Power MOSFETRDS(on) () at VGS = 10 V 0.0028 Package with Low Thermal ResistanceID (A) 120 AEC-Q101 qualifieddConfiguration Single 100 % Rg and UIS Tested Compl

SQM110P04-04Lwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 40DefinitionRDS(on) () at VGS = - 10 V 0.0040 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.0060 Package with Low Thermal ResistanceID (A) - 120 AEC-Q101 QualifieddConfiguration

SUM110P04-04LVishay SiliconixP-Channel 40-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)dAvailable New Package with Low Thermal Resistance0.0042 at VGS = - 10 V - 110RoHS*- 400.0062 at VGS = - 4.5 V - 110COMPLIANTSTO-263GG D STop ViewOrdering Information: SUM110P04-04LSUM110P04-04L (Lead (Pb

SQM120N04-02Lwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.0023 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.0041 Package with Low Thermal ResistanceID (A) 120 AEC-Q101 QualifieddConfiguration Single

SUM110N04-04Vishay SiliconixN-Channel 40-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature40 0.0035 at VGS = 10 V 110aRoHS*COMPLIANTTO-263DGG D STop ViewSOrdering Information: SUM110N04-04SUM110N04-04-E3 (Lead (Pb)-free) N-Channel MOSFETABSOLUTE MAXIMUM RA

SQM18N33-160Hwww.vishay.comVishay SiliconixAutomotive N-Channel 330 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 330 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.160 AEC-Q101 QualifiedID (A) 31 100 % Rg and UIS TestedConfiguration Single Material categorization:For definitions of compliance plea

SQM120N04-1m9www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURES TrenchFET Power MOSFETPRODUCT SUMMARY Package with Low Thermal ResistanceVDS (V) 40 AEC-Q101 QualifieddRDS(on) () at VGS = 10 V 0.0019 100 % Rg and UIS TestedID (A) 120 Material categorization:Configuration SingleFor definitions of compliance please

SUM110N06-3m4LVishay SiliconixN-Channel 60-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) 100 % Rg TestedRoHS0.0034 at VGS = 10 V COMPLIANT 60110a0.0041 at VGS = 4.5 V DTO-263GG D STop ViewSN-Channel MOSFETOrdering Information: SUM110N06-3m4L-E3 (Lead (Pb)-free)ABSOLUTE MAXIMUM RATINGS

SQM120P06-07Lwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 60 Package with Low Thermal ResistanceRDS(on) () at VGS = - 10 V 0.0067 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.0088 AEC-Q101 QualifieddID (A) - 120 Material categorization:Configurat

SQM120N06-06www.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.006 AEC-Q101 qualified dID (A) 120 100 % Rg and UIS testedConfiguration SinglePackage TO-263 Material categorization: for definitions of co

SQM110N06-06www.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.006 TrenchFET Power MOSFETID (A) 120 Package with Low Thermal ResistanceConfiguration Single AEC-Q101 QualifieddTO-263 D 100 % Rg and UIS Tested

SUM110N04-02LVishay SiliconixN-Channel 40-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A)Available New Package with Low Thermal Resistance 0.0023 at VGS = 10 V RoHS*40110a0.0038 at VGS = 4.5 V COMPLIANTDTO-263 GG D S Top View SOrdering Information: SUM110N04-02LSUM110N04-02L-E3 (Lead (Pb)-fr

SQM100N04-2m7www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 40 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.0027 100 % Rg and UIS testedID (A) 100 AEC-Q101 qualified dConfiguration SinglePackage TO-263 Material categorization: for definitions of

SQM120N04-1m7Lwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0017 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.0020 AEC-Q101 QualifieddID (A) 120 Material categorization:Configuration Sin

SUM110P06-08LVishay SiliconixP-Channel 60-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)dAvailable Package with Low Thermal Resistance0.008 at VGS = - 10 V RoHS*- 60 - 110 100 % Rg Tested0.0105 at VGS = - 4.5 V COMPLIANTSTO-263GG D STop ViewDOrdering Information: SUM110P06-08LSUM110P06-08L-E

SUM110N06-3m9HVishay SiliconixN-Channel 60-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) Qg (Typ) 175 C Junction TemperatureRoHS0.0039 at VGS = 10 V 60110a 200COMPLIANT Low Thermal Resistance Package High Threshold Voltage At High Temperature 100 % Rg TestedDTO-263GG D STop Vi

New ProductSUM110P08-11LVishay SiliconixP-Channel 80-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)b Qg (Typ)RoHS0.0112 at VGS = - 10 V - 110COMPLIANT- 80 85 nC0.0145 at VGS = - 4.5 V - 109TO-263SGDrain Connected to TabG D STop ViewDOrdering Information: SUM110P08-11L-E3 (Lead (Pb)-free) P-Channel MOSFETA

SQM110N08-05www.vishay.comVishay SiliconixAutomotive N-Channel 75 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) 75 TrenchFET Power MOSFETRDS(on) () at VGS = 10 V 0.0048 Package with Low Thermal ResistanceID (A) 120 AEC-Q101 QualifieddConfiguration Single 100 % Rg and UIS TestedDTO-263

SQM200N04-1m1Lwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0011 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.0013 AEC-Q101 QualifieddID (A) 200 Material categorization:Configuration Sin

SUM110N10-09Vishay SiliconixN-Channel 100 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) New Package with Low Thermal Resistance 100 0.0095 at VGS = 10 V 110a 100 % Rg TestedDTO-263 GG D S Top View SOrdering Information: SUM110N10-09-E3 (Lead (Pb)-free) N-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC =

SQM110N04-04www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) 40 TrenchFET Power MOSFETRDS(on) () at VGS = 10 V 0.0035 Package with Low Thermal ResistanceID (A) 120 AEC-Q101 QualifieddConfiguration Single 100 % Rg and UIS TestedD Co

SQM120N04-2m1www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0021 100 % Rg and UIS TestedID (A) 120 AEC-Q101 QualifieddConfiguration Single Material categorization:DFor definitions of compliance

SQM110N04-03Lwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.0035 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.0053 Package with Low Thermal ResistanceID (A) 120 AEC-Q101 QualifieddConfiguration Single

SUM110N04-03PVishay SiliconixN-Channel 40-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.0031 at VGS = 10 V 40110aRoHS* Package with Low Thermal ResistanceCOMPLIANT Extremely Low Qgd WFETTM Technology for Low Switching Losses 100 % Rg TestedDTO

SUP50N03-5m1PVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.0051 at VGS = 10 V50d TrenchFET Power MOSFET30 21.70.0063 at VGS = 4.5 V50d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Supply- Seco

SQM110N10-09www.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) 100 TrenchFET Power MOSFETRDS(on) () at VGS = 10 V 0.0095 Package with Low Thermal ResistanceID (A) 120 AEC-Q101 QualifieddConfiguration Single 100 % Rg and UIS TestedD

SQM110P06-07Lwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 60 Package with Low Thermal ResistanceRDS(on) () at VGS = - 10 V 0.0067 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.0088 AEC-Q101 QualifieddID (A) - 120 Material categorization:For definitio

SUM110N05-06LVishay SiliconixN-Channel 55-V (D-S), 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) Qg (Typ)Available 175 C Junction Temperature0.006 at VGS = 10 V 110RoHS*55 65 Low Thermal Resistance Package0.0085 at VGS = 4.5 V 92 COMPLIANTAPPLICATIONS IndustrialDTO-263GG D STop ViewS

SQM120N10-3m8www.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 100 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0038 AEC-Q101 QualifieddID (A) 120 100 % Rg and UIS TestedConfiguration Single Material categorization:DFor definitions of compliance p

SQM120N04-03Lwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.0035 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.0053 Package with Low Thermal ResistanceID (A) 120 AEC-Q101 QualifieddConfiguration Single

SUM110N04-2m3LVishay SiliconixN-Channel 40-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) 100 % Rg TestedRoHS0.0023 at VGS = 10 V COMPLIANT 40110a0.003 at VGS = 4.5 V DTO-263GG D STop ViewSN-Channel MOSFETOrdering Information: SUM110N04-2m3L-E3 (Lead (Pb)-free)ABSOLUTE MAXIMUM RATINGS T

SQM120N04-1m8Vishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.0018 TrenchFET Power MOSFETID (A) 120 Package with Low Thermal ResistanceConfiguration Single AEC-Q101 QualifieddD 100 % Rg and UIS Tested Compliant to RoHS

SQM120N10-09www.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100DefinitionRDS(on) () at VGS = 10 V 0.0095 TrenchFET Power MOSFETID (A) 120 Package with Low Thermal ResistanceConfiguration Single AEC-Q101 QualifieddD 100 % Rg and UIS Tested

SUM110N04-03Vishay SiliconixN-Channel 40-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A)Available Package with Low Thermal Resistance0.0028 at VGS = 10 V40110aRoHS*COMPLIANTDTO-263GG D STop ViewSOrdering Information: SUM110N04-03SUM110N04-03-E3 (Lead (Pb)-free)N-Channel MOSFETABSOLUTE MA

SQM120N06-04Lwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.0035 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.0050 Package with Low Thermal ResistanceID (A) 120 AEC-Q101 QualifieddConfiguration Single

SQM50N04-4m1www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0041 AEC-Q101 QualifieddID (A) 50 100 % Rg and UIS TestedConfiguration Single Material categorization:For definitions of compliance please s

SUM120N04-1m7Lwww.vishay.comVishay SiliconixN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) d Qg (TYP.) 100 % Rg and UIS tested0.0017 at VGS = 10 V 12040 190 Material categorization: 0.0020 at VGS = 4.5 V 120For definitions of compliance please see www.vishay.com/doc?99912 TO-263DAPPLICATIONS

SQM120N04-03www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.0028 TrenchFET Power MOSFETID (A) 120 Package with Low Thermal ResistanceConfiguration Single AEC-Q101 qualifiedd 100 % Rg and UIS TestedD Co

SUM110N03-03PVishay SiliconixN-Channel 30-V (D-S) 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETD 175_C Junction TemperatureV(BR)DSS (V) rDS(on) (W) ID (A)aD Optimized for Low-Side Synchronous Rectifier0.0026 @ VGS = 10 V 110aD 100% Rg Tested30300.004 @ VGS = 4.5 V 110aAPPLICATIONSD Desktop or Server CPU CoreDTO-263DRAIN connected to TABGG D

SQM110N04-02Lwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) 40 TrenchFET Power MOSFETRDS(on) () at VGS = 10 V 0.0023 Package with Low Thermal ResistanceRDS(on) () at VGS = 4.5 V 0.0041 AEC-Q101 QualifieddID (A) 120 100 % Rg and UIS T

SUM110P06-07Lwww.vishay.comVishay SiliconixP-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) ()ID (A) d Package with low thermal resistance0.0069 at VGS = -10 V -60 -110 Material categorization: 0.0088 at VGS = -4.5 V for definitions of compliance please see www.vishay.com/doc?99912 STO-263GSSP-C

SUM110P08-11LVishay SiliconixP-Channel 80 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)b Qg (Typ) Material categorization:For definitions of compliance please see0.0112 at VGS = - 10 V - 110- 80 85 nCwww.vishay.com/doc?999120.0145 at VGS = - 4.5 V - 109TO-263SGDrain Connected to TabG D STop ViewDOrder

SQM110N04-04Vishay SiliconixAutomotiveN-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.0035 TrenchFET Power MOSFETID (A) 120 Package with Low Thermal ResistanceConfiguration Single AEC-Q101 QualifieddD Compliant to RoHS Directive 2002/95/ECTO-263

SUM110N03-04PNew ProductVishay SiliconixN-Channel 30-V (D-S) 175_C MOSFETFEATURESD TrenchFETr Power MOSFETD 175_C Junction TemperaturePRODUCT SUMMARYD Optimized for Low-Side Synchronous Rectifier OperationD New Package with Low Thermal ResistanceV(BR)DSS (V) rDS(on) (W) ID (A)D 100% Rg Tested0.0042 @ VGS = 10 V 11030300.0065 @ VGS = 4.5 V 77 APPLICATIONSD DC/DC C

SQM120N04-1m7www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURES TrenchFET Power MOSFETPRODUCT SUMMARY Package with Low Thermal ResistanceVDS (V) 40 AEC-Q101 QualifieddRDS(on) () at VGS = 10 V 0.0017 100 % Rg and UIS TestedID (A) 120 Material categorization:Configuration SingleFor definitions of compliance please

SQM110N05-06Lwww.vishay.comVishay SiliconixAutomotive N-Channel 55 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 55DefinitionRDS(on) () at VGS = 10 V 0.006 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.010 Package with Low Thermal ResistanceID (A) 110 AEC-Q101 QualifiedcConfiguration Single

SUM110P04-05Vishay SiliconixP-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)a Qg (Typ.)RoHS0.005 at VGS = - 10 V - 110 185 nC- 40COMPLIANTTO-263SGDrain Connected to TabG D STop ViewDOrdering Information: SUM110P04-05-E3 (Lead (Pb)-free) P-Channel MOSFETABSOLUTE MAXIMUM RATINGS TA = 25 C, unless o

SUM110N08-07PVishay SiliconixN-Channel 75 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSVDS (V) RDS(on) () ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.007 at VGS = 10 V75 Material categorization:110d 69For definitions of compliance please seewww.vishay.com/doc?99912TO-263 APPLICATIONS Synchronous RectificationDGDG STop Vie

SQD50N04-4m1www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0041 AEC-Q101 QualifieddID (A) 50 100 % Rg and UIS TestedConfiguration Single Material categorization:For definitions of compliance please s

CZDM1003NSURFACE MOUNT SILICONwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CZDM1003N is aMOSFET3.0 Amp, 100 Volt silicon N-Channel enhancement-mode MOSFET, designed for motor control and relay driver applications. This MOSFET offers high current, low rDS(ON), and low gate charge.MARKING: FULL PART NUMBERSOT-223 CASEFEATURES:APPL

CMKT5089M10www.centralsemi.comSURFACE MOUNTDUAL NPN SILICONDESCRIPTION:MATCHED hFE TRANSISTORSThe CENTRAL SEMICONDUCTOR CMKT5089M10 consists of two (2) individually isolated 5089NPN silicon transistors with matched hFE. This ULTRAmini device is manufactured by the epitaxial planar process and epoxy molded in an SOT-363 surface mount package. The CMKT5089M10 has been d

CXDM1002NSURFACE MOUNT SILICONwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CXDM1002N is MOSFETa high voltage silicon N-Channel enhancement-mode MOSFET designed for high speed pulsed amplifier and driver applications. This MOSFET offers high voltage, low rDS(ON), low threshold voltage, and low leakage current.MARKING: FULL PART NUMBE

D a t a S h e e t , Aug. 2010 Control Integrated POwer System (CIPOS) IGCM1 5F60G A http://www.lspst.com F o r P o w e r M a n a g e m e n t A p p l i c a t i o n CIPOS IGCM15F60GA Revision History: 2010-08 Ver.1.1 Previous Version: Datasheet Ver. 1.0 Page Subjects (major changes since last revision) 11 tFLTCLR Authors: Junho Song, Junbae Lee and Daewoong Chung

IMW65R048M1HMOSFETPG-TO 247-3650 V CoolSiC M1 SiC Trench Power DeviceThe 650 V CoolSiC is built over the solid silicon carbide technologydeveloped in Infineon in more than 20 years. Leveraging the wide bandgapTabSiC material characteristics, the 650V CoolSiC MOSFET offers a uniquecombination of performance, reliability and ease of use. Suitable for hightemperature and

IMZ120R090M1H IMZ120R090M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Drainpin 1 Very low switching losses Gate Threshold-free on state characteristic pin 4 Benchmark gate threshold voltage, V = 4.5V GS(th)Sense Source 0V turn-off gate voltage for easy and simple gate drive pin 3 pin 2 Fully controllable dV/dt Robust

IMZ120R140M1H IMZ120R140M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Drainpin 1 Very low switching losses Gate Threshold-free on state characteristic pin 4 Benchmark gate threshold voltage, V = 4.5V GS(th)Sense Source 0V turn-off gate voltage for easy and simple gate drive pin 3 pin 2 Fully controllable dV/dt Robust

IMW120R060M1H IMW120R060M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drainpin 2Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control

FF45MR12W1M1_B11EasyDUAL Modul mit CoolSiC Trench MOSFET und PressFIT / NTCEasyDUAL module with CoolSiC Trench MOSFET and PressFIT / NTCVorlufige Daten / Preliminary DataJV = 1200VDSSI = 25A / I = 50AD nom DRMPotentielle Anwendungen Potential Applications Anwendungen mit hohen Schaltfrequenzen High Frequency Switching application DC/DC Wandler DC/DC c

IMZA65R072M1HMOSFETPG-TO 247-4-3650 V CoolSiC M1 SiC Trench Power DeviceThe 650 V CoolSiC is built over the solid silicon carbide technologydeveloped in Infineon in more than 20 years. Leveraging the wide bandgapTabSiC material characteristics, the 650V CoolSiC MOSFET offers a uniquecombination of performance, reliability and ease of use. Suitable for hightemperature a

IMZA65R048M1HMOSFETPG-TO 247-4-3650 V CoolSiC M1 SiC Trench Power DeviceThe 650 V CoolSiC is built over the solid silicon carbide technologydeveloped in Infineon in more than 20 years. Leveraging the wide bandgapTabSiC material characteristics, the 650V CoolSiC MOSFET offers a uniquecombination of performance, reliability and ease of use. Suitable for hightemperature a

IMW120R090M1H IMW120R090M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drainpin 2Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control

Technische Information / Technical InformationIGBT-ModuleBSM 150 GB 60 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 600 Vcollector-emitter voltageTc= 60C IC,nom. 150 AKollektor-DauergleichstromDC-collector currentTc= 25C IC 180 APeriodischer Kollektor Spitzenstrom

IMZ120R350M1H IMZ120R350M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Drainpin 1 Very low switching losses Gate Threshold-free on state characteristic pin 4 Benchmark gate threshold voltage, V = 4.5V GS(th)Sense Source 0V turn-off gate voltage for easy and simple gate drive pin 3 pin 2 Fully controllable dV/dt Robust

IMZ120R060M1H IMZ120R060M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Drainpin 1 Very low switching losses Gate Threshold-free on state characteristic pin 4 Benchmark gate threshold voltage, V = 4.5V GS(th)Sense Source 0V turn-off gate voltage for easy and simple gate drive pin 3 pin 2 Fully controllable dV/dt Robust

AIMW120R045M1 AIMW120R045M1 CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Revolutionary semiconductor material - Silicon Carbide Very low switching losses Threshold-free on state characteristic IGBT-compatible driving voltage (15V for turn-on) 0V turn-off gate voltage Benchmark gate threshold voltage, V =4.5V GS(th) Fully c

D a t a S h e e t , Aug. 2010 Control Integrated POwer System (CIPOS) IGCM10F60G A http://www.lspst.com F o r P o w e r M a n a g e m e n t A p p l i c a t i o n CIPOS IGCM10F60GA Revision History: 2010-08 Ver.1.1 Previous Version: Datasheet Ver. 1.0 Page Subjects (major changes since last revision) 11 tFLTCLR Authors: Junho Song, Junbae Lee and Daewoong Chung E

IMW120R220M1H IMW120R220M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drainpin 2Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control

IMW65R027M1HMOSFETPG-TO 247-3650 V CoolSiC M1 SiC Trench Power DeviceThe 650 V CoolSiC is built over the solid silicon carbide technologydeveloped in Infineon in more than 20 years. Leveraging the wide bandgapTabSiC material characteristics, the 650V CoolSiC MOSFET offers a uniquecombination of performance, reliability and ease of use. Suitable for hightemperature and

IMW120R140M1H IMW120R140M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drainpin 2Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control

DF23MR12W1M1P_B11EasyPACK Modul mit CoolSiC Trench MOSFET und PressFIT / NTC / TIMEasyPACK module with CoolSiC Trench MOSFET and PressFIT / NTC / TIMVorlufige Daten / Preliminary Data V = 1200VDSSI = 25A / I = 50AD nom DRMPotentielle Anwendungen Potential Applications Solar Anwendungen Solar applicationsElektrische Eigenschaften Electrical Features

IMW120R350M1H IMW120R350M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drainpin 2Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control

D a t a S h e e t , Aug. 2010 Control Integrated POwer System (CIPOS) IGCM10F60HA http://www.lspst.com F o r P o w e r M a n a g e m e n t A p p l i c a t i o n CIPOS IGCM10F60HA Revision History: 2010-08 Ver.1.1 Previous Version: Datasheet Ver. 1.0 Page Subjects (major changes since last revision) 11 tFLTCLR Authors: Junho Song, Junbae Lee and Daewoong Chung Ed

IMW120R030M1H IMW120R030M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drainpin 2Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control

DF11MR12W1M1P_B11EasyPACK Modul mit CoolSiC Trench MOSFET und PressFIT / NTC / TIMEasyPACK module with CoolSiC Trench MOSFET and PressFIT / NTC / TIMVorlufige Daten / Preliminary Data V = 1200VDSSI = 50A / I = 100AD nom DRMPotentielle Anwendungen Potential Applications Solar Anwendungen Solar applicationsElektrische Eigenschaften Electrical Features

F3L15MR12W2M1_B69EasyPACK Modul mit CoolSiC Trench MOSFET und PressFIT / NTCEasyPACK module with CoolSiC Trench MOSFET and PressFIT / NTCVorlufige Daten / Preliminary DataJV = 1200VDSSI = 75A / I = 150AD nom DRMPotentielle Anwendungen Potential Applications Anwendungen mit hohen Schaltfrequenzen High Frequency Switching application DC/DC Wandler

IMZA65R027M1HMOSFETPG-TO 247-4-3650 V CoolSiC M1 SiC Trench Power DeviceThe 650 V CoolSiC is built over the solid silicon carbide technologydeveloped in Infineon in more than 20 years. Leveraging the wide bandgapTabSiC material characteristics, the 650V CoolSiC MOSFET offers a uniquecombination of performance, reliability and ease of use. Suitable for hightemperature a

Technische Information / technical informationIGBT-ModuleBSM100GB120DLCIGBT-modules62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emitter voltageKollektor-Dauergleichstro

IMW120R045M1 IMW120R045M1 CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET DrainFeatures pin 2 Very low switching losses Gate Threshold-free on state characteristic pin 1 Wide gate-source voltage range Sourcepin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage Fully controllable dV/dt Commutation robus

IMZ120R220M1H IMZ120R220M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Drainpin 1 Very low switching losses Gate Threshold-free on state characteristic pin 4 Benchmark gate threshold voltage, V = 4.5V GS(th)Sense Source 0V turn-off gate voltage for easy and simple gate drive pin 3 pin 2 Fully controllable dV/dt Robust

IMW65R107M1HMOSFETPG-TO 247-3650 V CoolSiC M1 SiC Trench Power DeviceThe 650 V CoolSiC is built over the solid silicon carbide technologydeveloped in Infineon in more than 20 years. Leveraging the wide bandgapTabSiC material characteristics, the 650V CoolSiC MOSFET offers a uniquecombination of performance, reliability and ease of use. Suitable for hightemperature and

IMZ120R030M1H IMZ120R030M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Drainpin 1 Very low switching losses Gate Threshold-free on state characteristic pin 4 Benchmark gate threshold voltage, V = 4.5V GS(th)Sense Source 0V turn-off gate voltage for easy and simple gate drive pin 3 pin 2 Fully controllable dV/dt Robust

Technische Information / technical informationIGBT-ModuleBSM150GB120DLCIGBT-modules62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emitter voltageKollektor-Dauergleichstro

IMW65R072M1HMOSFETPG-TO 247-3650 V CoolSiC M1 SiC Trench Power DeviceThe 650 V CoolSiC is built over the solid silicon carbide technologydeveloped in Infineon in more than 20 years. Leveraging the wide bandgapTabSiC material characteristics, the 650V CoolSiC MOSFET offers a uniquecombination of performance, reliability and ease of use. Suitable for hightemperature and

GWM 180-004X2VDSS = 40 VThree phase full BridgeID25 = 180 Awith Trench MOSFETsRDSon typ. = 1.9 mWin DCB isolated high current packageL+Preliminary dataG3 G5G1S3 S5S1L1L2L3Straight leads Surface Mount DeviceG4 G6G2S4S6S2L-ApplicationsMOSFETsAC drivesSymbol Conditions Maximum Ratings in automobilesVDSS TJ = 25C to 150C 40 V - electr

VDSS ID25 RDS(on)MegaMOSTMFET IXTH / IXTM 10N100 1000 V 10 A 1.20 IXTH / IXTM 12N100 1000 V 12 A 1.05 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C 10N

FMD 15-06KC5Advanced Technical InformationFDM 15-06KC5ID25 = 15 ACoolMOS 1) Power MOSFETVDSS = 600 Vwith HiPerDyn FREDRDS(on) max = 0.165 Buck and Boost Topologies3 3ISOPLUS i4Electrically isolated back surfaceT2500 V electrical isolation5DN-Channel Enhancement Mode144Low RDSon, high VDSS MOSFET isolated backE72873 5Ultra low gate char

Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine

GWM100-0085X1VDSS = 85 VThree phase full BridgeID25 = 103 Awith Trench MOSFETsRDSon typ. = 5.5 mWin DCB isolated high current packageL+G3 G5G1S3 S5S1L1L2L3Straight leads Surface Mount DeviceG4 G6G2S4S6S2L-ApplicationsMOSFETsAC drivesSymbol Conditions Maximum Ratings in automobilesVDSS TJ = 25C to 150C 85 V - electric power steering

VDSS ID25 RDS(on)IXTH / IXTM 11N80 800 V 11 A 0.95 MegaMOSTMFETIXTH / IXTM 13N80 800 V 13 A 0.80 N-Channel Enhancement ModeTO-247 AD (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VD (TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C 11N80 11

VDSS ID25 RDS(on)StandardIXTH 12 N50A 500 V 12 A 0.4 Power MOSFETIXTM 12 N50A 500 V 12 A 0.4 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VD (TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C12 AIDM TC

Advance Technical InformationTrenchT2TM HiperFET VDSS = 150VFMM110-015X2FN-Channel Power ID25 = 53A MOSFET RDS(on) 20m 33T1trr(typ) = 85ns5544T211Phase Leg TopologyISOPLUS i4-PakTM22Symbol Test Conditions Maximum RatingsTJ -55 ... +175 C 1TJM 175 CIsolated TabTstg -55 ... +175 C5VISOLD 50/60HZ, RMS, t

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM 10 N100 1000 V 10 A 1.20 Power MOSFETsIXFH/IXFM 12 N100 1000 V 12 A 1.05 N-Channel Enhancement Mode 250 ns High dv/dt, Low trr, HDMOSTM Family trr Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M

VCES IC25 VCE(sat)Low VCE(sat) IGBT IXGH/IXGM 17 N100 1000 V 34 A 3.5 VHigh speed IGBT IXGH/IXGM 17 N100A 1000 V 34 A 4.0 VSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 M 1000 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C34 AIC90 TC = 90C17 A TO-204 AE (IXGM)ICM TC = 25C

GWM 100-01X1VDSS = 100 VThree phase full BridgeID25 = 90 Awith Trench MOSFETsRDSon typ. = 7.5 mWin DCB isolated high current packageL+G3 G5G1S3 S5S1L1L2L3Straight leads Surface Mount DeviceG4 G6G2S4S6S2L-ApplicationsMOSFETsAC drivesSymbol Conditions Maximum Ratings in automobilesVDSS TJ = 25C to 150C 100 V - electric power steering

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM 10 N90 900 V 10 A 1.1 Power MOSFETsIXFH/IXFM 12 N90 900 V 12 A 0.9 IXFH/IXFT 13 N90 900 V 13 A 0.8 N-Channel Enhancement Mode 250 ns High dv/dt, Low trr, HDMOSTM Family trr TO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 1

VCES IC25 VCE(sat)Low VCE(sat) IGBT IXGH/IXGM 17 N100 1000 V 34 A 3.5 VHigh speed IGBT IXGH/IXGM 17 N100A 1000 V 34 A 4.0 VSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 M 1000 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C34 AIC90 TC = 90C17 A TO-204 AE (IXGM)ICM TC = 25C

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM 15 N60 600 V 15 A 0.50 WPower MOSFETsIXFH/IXFM 20 N60 600 V 20 A 0.35 Wtrr 250 nsN-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 MW 600 V(TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 2

HiPerFETTM IXFH 13 N50 VDSS = 500 VPower MOSFETs IXFM 13 N50 ID (cont) = 13 ARDS(on) = 0.4 WN-Channel Enhancement Modetrr 250 nsHigh dv/dt, Low trr, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 MW 500 V(TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C13 ATO-204 AA

VMM 1500-0075X2VDSS = 75 VDual PowerID25 = 1560 AMOSFET ModuleRDS(on) = 0.38 mPhaseleg Configuration113103291889 111102FeaturesMOSFET T1 + T2 Trench MOSFETsSymbol Conditions Maximum Ratings - low RDSonVDSS TVJ = 25C to 150C 75 V - optimized intrinsic reverse diodeVGS 20 V package - low inductive current pathID25 TC = 2

FDM 100-0045SPID25 = 100 ABuck ChopperVDSS = 55 Vwith Trench Power MOSFETRDSon typ. = 5.7 mand Schottky Diodein ISOPLUS i4-PACTM3Preliminary data54125Features MOSFET trench MOSFETSymbol Conditions Maximum Ratings - very low on state resistance RDSon- fast switchingVDSS TVJ = 25C to 150C 55 V Schottky diode- low forward

GWM 120-0075X1VDSS = 75 VThree phase full BridgeID25 = 110 Awith Trench MOSFETsRDSon typ. = 4.0 mWin DCB isolated high current packageL+G3 G5G1S3 S5S1L1L2L3Straight leads Surface Mount DeviceG4 G6G2S4S6S2L-ApplicationsMOSFETsAC drivesSymbol Conditions Maximum Ratings in automobilesVDSS TVJ = 25C to 150C 75 V - electric power steerin

GWM 160-0055X1VDSS = 55 VThree phase full BridgeID25 = 150 Awith Trench MOSFETsRDSon typ. = 2.7 mWin DCB isolated high current packageL+G3 G5G1S3 S5S1L1L2L3Straight leads Surface Mount DeviceG4 G6G2S4S6S2L-ApplicationsMOSFETsAC drivesSymbol Conditions Maximum Ratings in automobilesVDSS TJ = 25C to 150C 55 V - electric power steering

GWM100-0085X1VDSS = 85 VThree phase full BridgeID25 = 103 Awith Trench MOSFETsRDSon typ. = 5.5 mWin DCB isolated high current packageL+G3 G5G1S3 S5S1L1L2L3Straight leads Surface Mount DeviceG4 G6G2S4S6S2L-ApplicationsMOSFETsAC drivesSymbol Conditions Maximum Ratings in automobilesVDSS TJ = 25C to 150C 85 V - electric power steering

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM 11 N80 800 V 11 A 0.95 WPower MOSFETsIXFH/IXFM 13 N80 800 V 13 A 0.80 Wtrr 250 nsN-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 MW 800 VVGS Continuous 20 V(TAB)VGSM Transient 30 VID25 TC = 2

Advance Technical InformationTrenchT2TM HiperFET VDSS = 75VFMM150-0075X2FN-Channel Power ID25 = 120A MOSFET RDS(on) 5.8m 33T1trr(typ) = 66ns5544T211Phase Leg TopologyISOPLUS i4-PakTM22Symbol Test Conditions Maximum RatingsTJ -55 ... +175 C 1TJM 175 CIsolated TabTstg -55 ... +175 C5VISOL 50/60HZ, RMS, t

OM120L60SB OM90L120SBPreliminary Data SheetOM100F60SB OM70F120SBIGBTS IN HERMETIC ISOLATED POWERBLOCK PACKAGESHigh Current, High Voltage 600V And 1200V,Up To 150 Amp IGBTs With FRED DiodesFEATURES Includes Internal FRED Diode Rugged Package Design Solder Terminals Very Low Saturation Voltage Fast Switching, Low Drive Current Available Screened To MIL-

205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.comELECTRICAL CHARACTERISTICS: OM150F120CMD (Tc= 25C unless otherwise specified)Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICSCollector Emitter Breakdown Voltage, VCE=0V VCES 1200 VZero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 2AGate Emitter Leakage Current, VGE=+/-15

205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.comELECTRICAL CHARACTERISTICS: OM150F120CMC (Tc= 25C unless otherwise specified)Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICSCollector Emitter Breakdown Voltage, VCE=0V VCES 1200 VZero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 2AGate Emitter Leakage Current, VGE=+/-15

OM11N60SAOM11N55SAPOWER MOSFET IN HERMETIC ISOLATEDTO-254AA PACKAGE600V & 550V, 11 Amp, N-ChannelMOSFET In Hermetic Metal PackageFEATURES Isolated Hermetic Metal Package Fast Switching Low RDS(on) Available Screened To MIL-S-19500, TX, TXV And S Ceramic Feedthroughs Also AvailableDESCRIPTIONThis series of hermetically packaged products feature the latest

205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.comELECTRICAL CHARACTERISTICS: OM150L120CMD (Tc= 25C unless otherwise specified)Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICSCollector Emitter Breakdown Voltage, VCE=0V VCES 1200 VZero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 2AGate Emitter Leakage Current, VGE=+/-15

205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246,www.omnirel.comELECTRICAL CHARACTERISTICS: OM150L120CMA (Tc= 25C unless otherwise specified)Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICSCollector Emitter Breakdown Voltage, VCE=0V VCES 1200 VZero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 2AGate Emitter Leakage Current, VGE=+/-15V

OM130STCRADIATION HARDENED POWER MOSFETSIN HERMETIC ISOLATED PACKAGE N-CHANNEL100V, 10 Amp, N-Channel, Radiation HardenedPower MOSFET In A Hermetic Metal PackageFEATURES Rated As Radiation Hard Avalanche Energy Rated Isolated Hermetic Package Low RDS(on) High Switching Speeds Screened to TX, TXV And S LevelsDESCRIPTIONThis N-Channel Power MOSFET produ

OM1N100SA OM5N100SA OM1N100STOM3N100SA OM6N100SA OM3N100STPOWER MOSFET IN HERMETIC ISOLATEDJEDEC PACKAGE1000V, Up To 6 Amp, N-ChannelMOSFET In Hermetic Metal PackageFEATURES Isolated Hermetic Metal Package Fast Switching Low RDS(on) Available Screened To MIL-19500, TX, TXV And S Ceramic Feedthroughs Also AvailableDESCRIPTIONThis series of hermetically pa

205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.comELECTRICAL CHARACTERISTICS: OM150L120CMC (Tc= 25C unless otherwise specified)Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICSCollector Emitter Breakdown Voltage, VCE=0V VCES 1200 VZero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 2AGate Emitter Leakage Current, VGE=+/-15

205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246,www.omnirel.comELECTRICAL CHARACTERISTICS: OM150F120CMA (Tc= 25C unless otherwise specified)Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICSCollector Emitter Breakdown Voltage, VCE=0V VCES 1200 VZero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 2AGate Emitter Leakage Current, VGE=+/-15V

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

This product complies with the RoHS Directive (EU 2002/95/EC).MTM13127Silicon P-channel MOS FETFor DC-DC converter circuitsFor swiching circuits Overview PackageMTM13127 is the P-channel MOS FET that is highly suitable ofr DC-DC Codeconverter and other switching circuits. Mini3-G3-BPackage dimension clicks here. Click! Features Low drain

Doc No. TT4-EA-14584Revision. 2Product StandardsMOS FETMTM131230BBFMTM131230BBFSilicon P-channel MOSFETUnit : mm 2.9For switching0.4 0.163 Features Low drain-source ON resistance : RDS(on)typ. = 40 m ( VGS = -4.0 V ) Halogen-free / RoHS compliant(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)1 21.1 Marking Symbol:BL(0.95)(0.95)1.91. Gate

This product complies with the RoHS Directive (EU 2002/95/EC).MTM13227Silicon N-channel MOSFETFor switching Features Package Low on-resistance: Ron = 85 mW (VGS = -4.0 V) Code Small package: Mini3-G3-B Mini3-G3-B Contributes to miniaturization of sets, reduction of component count. Pin Name Eco-friendly Halogen-free package 1: Gate Packaging

APT20M18B2VRA20M18LVR200V 100A 0.018B2VR POWER MOS V MOSFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LV

APT20M18B2VFRA20M18LVFR200V 100A 0.018B2VFR POWER MOS V FREDFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.

APT20M18B2VFRAPT20M18LVFR200V 100A 0.018WB2VFRPOWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVFR Identical

APT30M17JLL300V 135A 0.017WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's

APT20M16B2LLAPT20M16LLL200V 100A 0.016WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast

APT20M11JLL200V 176A 0.011R POWER MOS 7 MOSFETPower MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching losses"UL Recognized"along with exceptionall

APT20M11JVFR200V 175A 0.011POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.ISOTOP Fast Recovery Body Diode 100% Avalanche

APT20M16B2LLAPT20M16LLL200V 100A 0.016RB2LL POWER MOS 7 MOSFETT-MAXPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesLL

APT30M19JVFR300V 130A 0.019POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.ISOTOP Fast Recovery Body Diode 100% Avalanche

APT10M19BVR100V 75A 0.019POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

APT20M10JLL200V 185A 0.010 WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's

APT10M19BVR100V 75A 0.019POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

APT20M18B2VRAPT20M18LVR200V 100A 0.018WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specificati

APT10M19BVFR100V 75A 0.019POWER MOS V FREDFETTO-247Power MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avala

APT10M11JVR100V 144A 0.011POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche

APT10M11B2VR100V 100A 0.011POWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D L

APT10M19SVR100V 75A 0.019POWER MOS VD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

APT20M10JFLL200V 185A 0.010WTMFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent wi

APT10M11B2VFRAPT10M11LVFR100V 100A 0.011WB2VFRPOWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVFR Identical

APT10M19BVFRAPT10M19SVFR100V 75A 0.019BVFR POWER MOS V FREDFETD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementTO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.SV

APT10M11LVR100V 100A 0.011POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.. Faster Switching 100% Avalanche Tested D Low

APT20M13PVR200V 146A 0.013POWER MOS VP-PackPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS V alsoachieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lowe

APT20M11JVR200V 175A 0.011POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche

APT20M10JLL200V 185A 0.010WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's

APT20M16B2FLLAPT20M16LFLL200V 100A 0.016RB2FLL POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching losses

APT20M19JVR200V 112A 0.019POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche

APT20M11JFLL200V 176A 0.011R POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with exceptionally fast switchin

APT10M11JVFR100V 144A 0.011POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switchi

APT20M16B2FLLAPT20M16LFLL200V 100A 0.016WTMFREDFET POWER MOS 7B2FLLPower MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchingT-MAXTO-264losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with excepti

APT10M19BVFRAPT10M19SVFR100V 75A 0.019BVFR POWER MOS V FREDFETD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementTO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.SV

APT30M19JVR300V 130A 0.019POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche

APT30M17JFLL300V 135A 0.017R POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching losses"UL Recognized"along with exceptiona

VDS 1700 VID @ 25C 5.3 AC2M1000170J RDS(on) 1.0 Silicon Carbide Power MOSFET TM C2M MOSFET TechnologyN-Channel Enhancement ModeFeatures PackageTAB High blocking voltage with low RDS(on)Drain Easy to parallel and simple to drive Low parasitic inductance Separate driver source pin Ultra-low drain-gate capacitance Halogen Free, RoHS compli

VDS 1700 VID @ 25C 4.9 AC2M1000170D RDS(on) 1.0 Silicon Carbide Power MOSFET TM Z-FET MOSFETN-Channel Enhancement ModeFeatures Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Resistant to Latch-Up Halogen Free, RoHS CompliantBenefitsTO-247-3 Higher System Effi

CAS100H12AM1VDS 1.2 kV1.2 kV, 100A Silicon Carbide RDS(on) (TJ = 25C) 16 mHalf-Bridge ModuleEOFF (TJ = 125C) 1.8 mJZ-FETTM MOSFET and Z-RecTM DiodeFeatures Package Ultra Low Loss Zero Turn-off Tail Current from MOSFET Zero Reverse Recovery Current from Diode High-Frequency Operation Positive Temperature Coefficient on VF and VDS(on) AlSiC Base

VDS 1.2 kVCCS050M12CM21.2kV, 50A Silicon Carbide RDS(on) (TJ = 25C) 25 mSix-Pack (Three Phase) ModuleEOFF (TJ = 150C) 0.6 mJZ-FETTM MOSFET and Z-RecTM DiodeFeatures Package Ultra Low Loss Zero Reverse Recovery Current Zero Turn-off Tail Current High-Frequency Operation Positive Temperature Coefficient on VF and VDS(on) Cu Baseplate, AlN DBCSy

Technische Information / technical informationIGBT-ModuleBSM150GAL120DLCIGBT-modules62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Vorlufige Daten / preliminary dataHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emit

Technische Information / Technical InformationIGBT-ModuleBSM 100 GB 170 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-SperrspannungVCES 1700 Vcollector-emitter voltageTC = 80 C IC,nom. 100 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 200 APeriodischer Kollektor Spitzens

BSM 10 GD 120 DN2IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 10 GD 120 DN2 1200V 15A ECONOPACK 2 C67076-A2513-A67BSM 10 GD120DN2E3224 1200V 15A ECONOPACK 2K C67070-A2513-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1

Technische Information / Technical InformationIGBT-ModuleBSM10GP60IGBT-ModulesElektrische Eigenschaften / Electrical propertiesHchstzulssige Werte / Maximum rated valuesDiode Gleichrichter/ Diode RectifierPeriodische Rckw. SpitzensperrspannungVRRM 1600 Vrepetitive peak reverse voltageDurchlastrom GrenzeffektivwertIFRMSM 40 ARMS forward current per chip Dauergl

Technische Information / Technical InformationIGBT-ModuleBSM 150 GB 170 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 1700 Vcollector-emitter voltageTC = 80 C IC,nom. 150 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 300 APeriodischer Kollektor Spitzen

Technische Information / Technical InformationIGBT-ModuleBSM 150 GB 60 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 600 Vcollector-emitter voltageTc= 60C IC,nom. 150 AKollektor-DauergleichstromDC-collector currentTc= 25C IC 180 APeriodischer Kollektor Spitzenstrom

BSM 100 GB 170 DN2IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate RG on,min = 15 OhmType VCE IC Package Ordering CodeBSM 100 GB 170 DN2 1700V 145A HALF-BRIDGE 2 C67070-A2703-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1700 VCollector-gate voltage VCGRRGE = 20 k 1700

Technische Information / Technical InformationIGBT-ModuleBSM 150 GD 60 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 600 Vcollector-emitter voltageTc= 55C IC,nom. 150 AKollektor-DauergleichstromDC-collector currentTc= 25C IC 180 APeriodischer Kollektor Spitzenstrom

BSM 15 GD 120 DN2IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 15 GD 120 DN2 1200V 25A ECONOPACK 2 C67076-A2504-A67BSM 15 GD120DN2E3224 1200V 25A ECONOPACK 2K C67070-A2504-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1

BSM 150 GAL 120 DN2IGBT Power Module Single switch with chopper diode at collector Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 150 GAL 120 DN2 1200V 210A HALF BRIDGE GAL 2 C67076-A2013-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE

BSM 150 GAR 120 DN2IGBT Power Module Single switch with chopper diode at collector Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 150 GAR 120 DN2 1200V 210A HALF BRIDGE GAR 2 C67076-A2013-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE

BSM 10 GD 120 DN2 E3224IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 10 GD 120 DN2 1200V 15A ECONOPACK 2 C67076-A2513-A67BSM 10 GD120DN2E3224 1200V 15A ECONOPACK 2K C67070-A2513-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage

BSM 150 GB 170 DN2IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate RG on,min = 10 OhmType VCE IC Package Ordering CodeBSM 150 GB 170 DN2 1700V 220A HALF-BRIDGE 2 C67070-A2704-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1700 VCollector-gate voltage VCGRRGE = 20 k 1700

BSM 150 GB 120 DN2IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 150 GB 120 DN2 1200V 210A HALF-BRIDGE 2 C67076-A2108-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate-emitter voltage VGE

Technische Information / Technical InformationIGBT-ModuleBSM10GP120IGBT-ModulesElektrische Eigenschaften / Electrical propertiesHchstzulssige Werte / Maximum rated valuesDiode Gleichrichter/ Diode RectifierPeriodische Rckw. SpitzensperrspannungVRRM 1600 Vrepetitive peak reverse voltageDurchlastrom GrenzeffektivwertIFRMSM 40 ARMS forward current per chip Dauergl

Technische Information / Technical InformationIGBT-ModuleBSM15GP120IGBT-ModulesElektrische Eigenschaften / Electrical propertiesHchstzulssige Werte / Maximum rated valuesDiode Gleichrichter/ Diode RectifierPeriodische Rckw. SpitzensperrspannungVRRM 1600 Vrepetitive peak reverse voltageDurchlastrom GrenzeffektivwertIFRMSM 40 ARMS forward current per chip Dauerg

BSM 100 GB 120 DN2IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 100 GB 120 DN2 1200V 150A HALF-BRIDGE 2 C67076-A2107-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate-emitter voltage VGE

Technische Information / Technical InformationIGBT-ModuleBSM15GP60IGBT-ModulesElektrische Eigenschaften / Electrical propertiesHchstzulssige Werte / Maximum rated valuesDiode Gleichrichter/ Diode RectifierPeriodische Rckw. SpitzensperrspannungVRRM 1600 Vrepetitive peak reverse voltageDurchlastrom GrenzeffektivwertIFRMSM 40 ARMS forward current per chip Dauergle

BSM 100 GAR 120 DN2IGBT Power Module Single switch with chopper diode at collector Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 100 GAR 120 DN2 1200V 150A HALF BRIDGE GAR 2 C67076-A2012-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE

Technische Information / technical informationIGBT-ModuleBSM100GB120DLCKIGBT-modulesIGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emitter voltageKollektor-Dauergleichstrom T = 80C, T = 150C I 100 ADC-collector current T = 25C, T = 150C I 205 APeriodischer Kollektor Spitzen

BSM 100 GB 120 DN2KIGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 100 GB 120 DN2K 1200V 145A HALF-BRIDGE 1 C67070-A2107-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate-emitter voltage V

Technische Information / Technical InformationIGBT-ModuleBSM 100 GB 60 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 600 Vcollector-emitter voltageTc= 70C IC,nom. 100 AKollektor-DauergleichstromDC-collector currentTc= 25C IC 130 APeriodischer Kollektor Spitzenstrom

BSM 100 GAL 120 DN2IGBT Power Module Single switch with chopper diode at collector Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 100 GAL 120 DN2 1200V 150A HALF BRIDGE GAL 2 C67076-A2012-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE

Technische Information / Technical InformationIGBT-ModuleBSM 100 GD 60 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 600 Vcollector-emitter voltageTc= 65C IC,nom. 100 AKollektor-DauergleichstromDC-collector currentTc= 25C IC 130 APeriodischer Kollektor Spitzenstrom

7MBR25VM120-50 IGBT ModulesIGBT MODULE (V series)1200V / 25A / PIMFeaturesLow V (sat)CECompact PackageP.C.Board Mount ModuleConverter Diode Bridge Dynamic Brake CircuitRoHS compliant productApplicationsInverter for Motor DriveAC and DC Servo Drive AmplifierUninterruptible Power SupplyMaximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25C unless o

7MBR35VM120-50 IGBT ModulesIGBT MODULE (V series)1200V / 35A / PIMFeaturesLow V (sat)CECompact PackageP.C.Board Mount ModuleConverter Diode Bridge Dynamic Brake CircuitRoHS compliant productApplicationsInverter for Motor DriveAC and DC Servo Drive AmplifierUninterruptible Power SupplyMaximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25C unless o

7MBR50VM120-50 IGBT ModulesIGBT MODULE (V series)1200V / 50A / PIMFeaturesLow V (sat)CECompact PackageP.C.Board Mount ModuleConverter Diode Bridge Dynamic Brake CircuitRoHS compliant productApplicationsInverter for Motor DriveAC and DC Servo Drive Amplifi erUninterruptible Power SupplyMaximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25C unless

FRM130D, FRM130R,FRM130H14A, 100V, 0.180 Ohm, Rad Hard,N-Channel Power MOSFETsJune 1998Features PackageTO-204AA 14A, 100V, RDS(on) = 0.180 Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)

FRM140D, FRM140R,FRM140H23A, 100V, 0.130 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 23A, 100V, RDS(on) = 0.130TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)

N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6661M1A VDSS = 90V , ID = 1.0A, RDS(ON) = 4.0 Fast Switching Low Threshold Voltage (Logic Level) Low CISS Integral Source-Drain Body Diode Hermetic Metal TO-257AA Package High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VDS Drain Source V

NORMALLY-OFF SILICON CARBIDE POWER JFET SML100M12MSF RDS(on)max of 0.150 High Temperature Operation Tj = 200C Low Gate Charge and Intrinsic Capacitance Positive Temperature Coefficient and Temperature Independent Switching Behaviour APPLICATIONS UPS SMPS Induction Heating Motor Drive ABSOLUTE MAXIMUM RATINGS (TC = 25C unless othe

2N7224SEMEIRFM150LABMECHANICAL DATADimensions in mm (inches)NCHANNEL13.59 (0.535) 6.32 (0.249)POWER MOSFET13.84 (0.545) 6.60 (0.260)3.53 (0.139) 1.02 (0.040)Dia.3.78 (0.149) 1.27 (0.050)VDSS 100VID(cont) 34ARDS(on) 0.0701 2 3FEATURES REPETITIVE AVALANCHE RATING ISOLATED AND HERMETICALLY SEALED ALTERNATIVE TO TO-3 PACKAGE0.89 (0.035)1.14 (0

IRFM1310STMECHANICAL DATADimensions in mm (inches)NCHANNEL POWER MOSFET VDSS 100VID(cont) 34ARDS(on) 0.070 FEATURES REPETITIVE AVALANCHE RATING ISOLATED AND HERMETICALLY SEALED EASE OF PARALLELINGTO254Z Package SIMPLE DRIVE REQUIREMENTSPin 1 Drain Pin 2 Sou

SUM1960NE 0.32A , 60V , RDS(ON) 2 N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SOT-363 These miniature surface mount MOSFETs utilize a high AEcell density trench process to provide low RDS(on) and to Lensure minimal power loss and heat dissipation

TSM150P04LCS Taiwan Semiconductor P-Channel Power MOSFET -40V, -22A, 15m FEATURES KEY PERFORMANCE PARAMETERS Low RDS(ON) to minimize conductive losses PARAMETER VALUE UNIT Logic level VDS -40 V Low gate charge for fast power switching RDS(on) VGS = -10V 15 100% UIS and Rg tested m Compliant to RoHS directive 2011/65/EU and in (max) VGS = -4.5V

TSM10N60 600V N-Channel MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)()(max) ID (A) 2. Drain 3. Source 600 0.75 @ VGS =10V 10 Features Block Diagram Advanced high dense cell design. High Power and Current handing capability. Application Power Supply. Lighting. Ordering Information Part No. Package Packing

TSM100N06 60V N-Channel Power MOSFET TO-220 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Drain 3. Source 60 6.7 @ VGS =10V 100 Features Block Diagram Advanced Trench Technology Low RDS(ON) 6.7m (Max.) Low gate charge typical @ 81nC (Typ.) Low Crss typical @ 339pF (Typ.) Ordering Information Part No. Package Packing

TSM10N06 60V N-Channel MOSFET TO-252 Pin Definition: PRODUCT SUMMARY 1. Gate (DPAK) VDS (V) RDSON (m) ID (A) 2. Drain 3. Source 65 @ VGS = 10V 10 60 80 @ VGS = 5V 10 110 @ VGS = 4V 9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering In

TSM10NC60CF Taiwan Semiconductor N-Channel Power MOSFET 600V, 10A, 0.75 FEATURES KEY PERFORMANCE PARAMETERS 100% UIS and Rg tested PARAMETER VALUE UNIT Advanced planar process VDS 600 V Compliant to RoHS Directive 2011/65/EU and in RDS(on) (max) 0.75 accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 Qg 33 nC APPLICATIONS

TSM160N10 100V N-Channel Power MOSFET TO-220 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Drain 3. Source 100 5.5 @ VGS =10V 160 Features Block Diagram Advanced Trench Technology Low RDS(ON) 5.5m (Max.) Low gate charge typical @ 154nC (Typ.) Low Crss typical @ 300pF (Typ.) Ordering Information Part No. Package Packing

TSM1NB60S 600V N-Channel Power MOSFET TO-92 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 600 10 @ VGS =10V 0.25 General Description The TSM1NB60S N-Channel Power MOSFET is produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching per

TSM1N80 800V N-Channel MOSFET TO-92 SOT-223 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 21.6 @ VGS =10V 0.15 800 General Description The TSM1N80 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to with

Preliminary TSM1N45D 450V N-Channel Power MOSFET SOP-8 PRODUCT SUMMARY Pin Definition: 1. Source 1 8. Drain 1 VDS (V) RDS(on)() ID (A) 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 450 4.25 @ VGS =10V 0.25 4. Gate 2 5. Drain 2 General Description The TSM1N45 is N-Channel enhancement mode power field effect transistors are produced using planar DMOS technology process

TSM1N60S 600V N-Channel Power MOSFET TO-92 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 600 11 @ VGS =10V 0.3 General Description The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand

TSM10N80 800V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 800 1.05 @ VGS =10V 9.5 General Description The TSM10N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, pr

TSM10P06 60V P-Channel MOSFET TO-252 Pin Definition: PRODUCT SUMMARY 1. Gate (DPAK) 2. Drain VDS (V) RDSON (m) ID (A) 3. Source 170 @ VGS = -10V -5 -60 220 @ VGS = -4.5V -2 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Pa

TSM1NB60 600V N-Channel Power MOSFET TO-251 TO-252 SOT-223 PRODUCT SUMMARY Pin Definition: (IPAK) (DPAK) 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 600 10 @ VGS =10V 0.5 General Description The TSM1NB60 N-Channel Power MOSFET is produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, p

TSM1N60L 600V N-Channel Power MOSFET PRODUCT SUMMARY TO-252 TO-251 VDS (V) RDS(on)() ID (A) Pin Definition: 1. Gate 600 12 @ VGS =10V 1 2. Drain 3. Source General Description The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withs

TSM190N08 75V N-Channel Power MOSFET TO-220 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Drain 3. Source 75 4.2 @ VGS =10V 190 Features Block Diagram Advanced Trench Technology Low RDS(ON) 4.2m (Max.) Low gate charge typical @ 160nC (Typ.) Low Crss typical @ 300pF (Typ.) Ordering Information Part No. Package Packing

TSM1N45 450V N-Channel Power MOSFET TO-92 SOT-223 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 450 4.25 @ VGS =10V 0.25 General Description The TSM1N45 is N-Channel enhancement mode power field effect transistors are produced using planar DMOS technology process. This advanced technology has been especially tailored to minimize

TSM13N50 500V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 500 0.48 @ VGS =10V 13 General Description The TSM13N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, prov

TSM15N50 500V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 500 0.44 @ VGS =10V 14 General Description The TSM15N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, pro

TSM1N60L 600V N-Channel Power MOSFET TO-252 TO-251 Pin Definition: PRODUCT SUMMARY 1. Gate 2. Drain VDS (V) RDS(on)() ID (A) 3. Source 600 12 @ VGS =10V 1 General Description The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to wit

TSM19N20 200V N-Channel Power MOSFET TO-252 Pin Definition: PRODUCT SUMMARY 1. Gate (DPAK) VDS (V) RDS(on)(m) ID (A) 2. Drain 3. Source 200 92 @ VGS =10V 18 Features Block Diagram Advanced Trench Technology Low RDS(ON) 92m (Max.) Low gate charge typical @ 55nC (Typ.) Low Crss typical @ 73pF (Typ.) Ordering Information Part No. Package Pa

TSM15N03PQ33 30V N-Channel Power MOSFET PDFN33 PRODUCT SUMMARY Pin Definition: 1. Source 8. Drain VDS (V) RDS(on)(m) ID (A) 2. Source 7. Drain 12 @ VGS =10V 7.8 3. Source 6. Drain 30 4. Gate 5. Drain 17 @ VGS =4.5V 7 Features Block Diagram Advanced Trench Technology Low On-Resistance Low gate charge typical @ 3.6nC (Typ.) Low Crss typical @

TSM1N60S 600V N-Channel Power MOSFET TO-92 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 600 11 @ VGS =10V 0.3 General Description The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand

J0003A SERIES High speed switchingSilicon P-channel MOSFETDESCRIPTION OUTLINE DRAWING (Unitmm) INJ0003A is a Silicon P-channel MOSFET. INJ0003AU1 This product is most suitable for low voltage 1.5use such as portable machinery , because of 0.35 0.80.35low voltage drive and low on resistance. JEITASC-75A FEATURE JEDEC Input impedan

0002A SERIES High speed switchingSilicon N-channel MOSFETDESCRIPTION OUTLINE DRAWING (Unitmm) INK0002A is a Silicon N-channel MOSFET. INK0002AU1 This product is most suitable for low voltage 1.5use such as portable machinery , because of 0.35 0.80.35low voltage drive and low on resistance. JEITASC-75A FEATURE JEDEC Input imped

0010A SERIES High speed switchingSilicon N-channel MOSFETDESCRIPTION OUTLINE DRAWING (Unitmm) INK0010A is a Silicon N-channel MOSFET. INK0010AU1 This product is most suitable for low voltage 1.5use such as portable machinery , because of 0.35 0.80.35low voltage drive and low on resistance. JEITASC-75A FEATURE JEDEC Input imped

0003A SERIES High speed switchingSilicon N-channel MOSFETDESCRIPTION OUTLINE DRAWING (Unitmm) INK0003A is a Silicon N-channel MOSFET. INK0003AU1 This product is most suitable for low voltage 1.5use such as portable machinery , because of 0.35 0.80.35low voltage drive and low on resistance. JEITASC-75A FEATURE JEDEC Input imped

J0001A SERIES High speed switchingSilicon P-channel MOSFETDESCRIPTION OUTLINE DRAWING (Unitmm) INJ0001A is a Silicon P-channel MOSFET. INJ0001AU1 This product is most suitable for low voltage 1.5use such as portable machinery , because of 0.35 0.80.35low voltage drive and low on resistance. JEITASC-75A FEATURE JEDEC Input impedan

ISC6053AM1FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATIONSILICON NPN EPITAXIAL TYPEUnitmmOUTLINE DRAWING DESCRIPTION 2.1 ISC6053AM1 is a silicon NPN epitaxial type transistor 0.425 1.25 0.425 Designed with high collector current, low VCE(sat). FEATURE High collector current ICMAX=650mA Low collector to emitter saturation voltage VCE

SMALL-SIGNAL TRANSISTORISA1235AC1 ISA1602AM1FOR LOW FREQUENCY AMPLIFY APPLICATIONSILICON PNP EPITAXIAL TYPEOUTLINE DRAWING UNITmmDESCRIPTION ISA1235AC1 ISA1602AM1 is super mini ISA1235AC1 ISA1602AM1 package resin sealed silicon PNP epitaxial type transistor. 2.12.8These are designed for low frequency voltage 0.425 1.25 0.4251.5 0.65 0.65amplify applicati

ISA2188AM1FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATIONSILICON PNP EPITAXIAL TYPEUnitmmOUTLINE DRAWING DESCRIPTION 2.1 ISA2188AM1 is a silicon PNP epitaxial type transistor 0.425 1.25 0.425 Designed with high collector current, low VCE(sat). FEATURE High collector current ICMAX=-650mA Low collector to emitter saturation voltage VCE

0001A SERIES High speed switchingSilicon N-channel MOSFETDESCRIPTION OUTLINE DRAWING (Unitmm) INK0001A is a Silicon N-channel MOSFET. INK0001AU1 This product is most suitable for low voltage 1.5use such as portable machinery , because of 0.35 0.80.35low voltage drive and low on resistance. JEITASC-75A FEATURE JEDEC Input imped

0012A SERIES High speed switchingSilicon N-channel MOSFETDESCRIPTION OUTLINE DRAWING (Unitmm) INK0012A is a Silicon N-channel MOSFET. INK0012AU1 This product is most suitable for low voltage 1.5use such as portable machinery , because of 0.35 0.80.35low voltage drive and low on resistance. JEITASC-75A FEATURE JEDEC Input imped

INK0112AX SERIES High speed switching Silicon N-channel MOSFETDESCRIPTION OUTLINE DRAWING (Unitmm) INK0112A is a Silicon N-channel MOSFET. This product is most suitable for low voltage INK0112AU1 use such as portable machinery , because of low 1.5voltage drive and low on resistance. 0.35 0.80.35FEATURE Input impedance is high, and not necessary to JEIT

0001B SERIES High speed switchingSilicon N-channel MOSFETDESCRIPTION OUTLINE DRAWING (Unitmm) INK0001B is a Silicon N-channel MOSFET. INK0001BU1 This product is most suitable for low voltage 1.5use such as portable machinery , because of 0.35 0.80.35low voltage drive and low on resistance. JEITASC-75A FEATURE JEDEC Input imped

J0002A SERIES High speed switchingSilicon P-channel MOSFETDESCRIPTION OUTLINE DRAWING (Unitmm) INJ0002A is a Silicon P-channel MOSFET. INJ0002AU1 This product is most suitable for low voltage 1.5use such as portable machinery , because of 0.35 0.80.35low voltage drive and low on resistance. JEITASC-75A FEATURE JEDEC Input impedan

J0011A SERIES High speed switchingSilicon P-channel MOSFETDESCRIPTION OUTLINE DRAWING (Unitmm) INJ0011A is a Silicon P-channel MOSFET. INJ0011AU1 This product is most suitable for low voltage 1.5use such as portable machinery , because of 0.35 0.80.35low voltage drive and low on resistance. JEITASC-75A FEATURE JEDEC Input impedan

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFNWB2*2-6L-J Plastic-Encapsulate MOSFETS CJM1206 P-Channel Power MOSFET DFNWB2*2-6L-JID V(BR)DSS RDS(on)MAX m@-4.5V451. DRAIN 2. DRAIN -12V 60 m -6A@-2.5V3. GATE m@-1.8V90 4. SOURCE 5. DRAIN 6. DRAIN DESCRIPTION The CJM1206 uses advanced trench technology to provide excellent RDS(on) , low gate

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB2*2-6L-J Plastic-Encapsulate MOSFETS CJM1216 P-Channel Power MOSFET DFNWB22-6L-J ID V(BR)DSS RDS(on)MAX 21m@-4.5V 1. DRAIN -12 -16A V 27m@-2.5V 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN DESCRIPTION The CJM1216 uses advanced trench technology to provide excellent RDS(on) , low gate charge and

APTM120DA30CT1G VDSS = 1200V Boost chopper RDSon = 300m typ @ Tj = 25C MOSFET + SiC chopper diode ID = 31A @ Tc = 25C Power Module Application 5 6 11 AC and DC motor control Switched Mode Power Supplies Power Factor Correction CR1Features 3NTC Power MOS 8 MOSFET 4- Low RDSon Q2- Low input and Miller capacitance - Low gate charge

APT8M100B APT8M100S 1000V, 8A, 1.80 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKA proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of

APT20M120JCU3VDSS = 1200V ISOTOP Buck chopper RDSon = 560m typ @ Tj = 25C MOSFET + SiC chopper diode ID = 20A @ Tc = 25C Power module Application D AC and DC motor control Switched Mode Power Supplies Features Power MOS 8 MOSFET G- Low RDSon S- Low input and Miller capacitance - Low gate charge - Avalanche energy rated SiC Schott

APT19M120J 1200V, 19A, 0.53 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of the poly-silicon

APT7M120B APT7M120S 1200V, 8A, 2.1 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKA proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of t

APT24M120B2 APT24M120L 1200V, 24A, 0.63 MaxN-Channel MOSFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and

APTM100UM65SCAVGVDSS = 1000V Single switch RDSon = 65m typ @ Tj = 25C Series & SiC parallel diodes ID = 145A @ Tc = 25C MOSFET Power ModuleD Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control DKFeatures Power MOS 7 MOSFETs - Low RDSon G - Low input and Miller capacitance - Low g

APT31M100B2 APT31M100L 1000V, 32A, 0.38 MaxN-Channel MOSFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and

APT26M100JCU3VDSS = 1000V ISOTOP Buck chopper RDSon = 330m typ @ Tj = 25C MOSFET + SiC chopper diode ID = 26A @ Tc = 25C Power module Application D AC and DC motor control Switched Mode Power Supplies Features Power MOS 8 MOSFET G- Low RDSon S- Low input and Miller capacitance - Low gate charge - Avalanche energy rated SiC Schott

APTM100DA18CT1GVDSS = 1000V Boost chopper RDSon = 180m typ @ Tj = 25C MOSFET + SiC chopper diode ID = 40A @ Tc = 25C Power Module Application 5 6 11 AC and DC motor control Switched Mode Power Supplies Power Factor Correction CR1 Features Power MOS 8 MOSFETs 3NTC- Low RDSon 4Q2- Low input and Miller capacitance - Low gate charge

APT14M120B APT14M120S 1200V, 14A, 1.10 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKA proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance

APT17M120JCU3VDSS = 1200V ISOTOP Buck chopper RDSon = 680m typ @ Tj = 25C MOSFET + SiC chopper diode ID = 17A @ Tc = 25C Power module Application D AC and DC motor control Switched Mode Power Supplies Features Power MOS 8 MOSFET G- Low RDSon S- Low input and Miller capacitance - Low gate charge - Avalanche energy rated SiC Schott

APT26M100JCU2VDSS = 1000V ISOTOP Boost chopper RDSon = 330m typ @ Tj = 25C MOSFET + SiC chopper diode ID = 26A @ Tc = 25C Power module Application K AC and DC motor control Switched Mode Power Supplies Power Factor Correction D Brake switch Features Power MOS 8 MOSFET G - Low RDSon - Low input and Miller capacitance - Low gat

APT22M100JCU2VDSS = 1000V ISOTOP Boost chopper RDSon = 400m typ @ Tj = 25C MOSFET + SiC chopper diode ID = 22A @ Tc = 25C Power module Application K AC and DC motor control Switched Mode Power Supplies Power Factor Correction D Brake switch Features Power MOS 8 MOSFET G - Low RDSon - Low input and Miller capacitance - Low gat

APTM100A23SCTG VDSS = 1000V Phase leg RDSon = 230m typ @ Tj = 25C Series & SiC parallel diodes ID = 36A @ Tc = 25C MOSFET Power Module Application Motor control Switched Mode Power Supplies NTC2 Uninterruptible Power Supplies VBUSFeatures Q1 Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance G1OUT - Low gate charge -

APT22M100JCU3VDSS = 1000V ISOTOP Buck chopper RDSon = 400m typ @ Tj = 25C MOSFET + SiC chopper diode ID = 22A @ Tc = 25C Power module Application D AC and DC motor control Switched Mode Power Supplies Features Power MOS 8 MOSFET G- Low RDSon S- Low input and Miller capacitance - Low gate charge - Avalanche energy rated SiC Schott

APT37M100B2 APT37M100L 1000V, 37A, 0.33 MaxN-Channel MOSFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and

APTC60DAM18CTG Boost chopper VDSS = 600V SiC FWD diode RDSon = 18m max @ Tj = 25C Super Junction ID = 143A @ Tc = 25C MOSFET Power Module Application AC and DC motor control VBUS NTC2 Switched Mode Power Supplies VBUS SENSE Power Factor Correction CR1 Features - Ultra low RDSon OUT- Low Miller capacitance Q2- Ultra low gate charge -

APTM120U10SCAVG VDSS = 1200V Single switch RDSon = 100m typ @ Tj = 25C Series & SiC parallel diodes ID = 116A @ Tc = 25C MOSFET Power Module D Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control DKFeatures Power MOS 7 MOSFETs - Low RDSon G - Low input and Miller capacitance - Low

APT21M100J 1000V, 21A, 0.38 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of the poly-silicon

APT28M120B2 APT28M120L 1200V, 29A, 0.53 MaxN-Channel MOSFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and

APT17M120JCU2VDSS = 1200V ISOTOP Boost chopper RDSon = 680m typ @ Tj = 25C MOSFET + SiC chopper diode ID = 17A @ Tc = 25C Power module Application K AC and DC motor control Switched Mode Power Supplies Power Factor Correction D Brake switch Features Power MOS 8 MOSFET G - Low RDSon - Low input and Miller capacitance - Low gat

APT45M100J 1000V, 45A, 0.18 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of the poly-silicon

APT9M100B APT9M100S 1000V, 9A, 1.40 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKA proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of

APT14M100B APT14M100S 1000V, 14A, 0.88 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKA proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance

APT25M100J 1000V, 25A, 0.33 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of the poly-silicon

APT20M120JCU2VDSS = 1200V ISOTOP Boost chopper RDSon = 560m typ @ Tj = 25C MOSFET + SiC chopper diode ID = 20A @ Tc = 25C Power module Application K AC and DC motor control Switched Mode Power Supplies Power Factor Correction D Brake switch Features Power MOS 8 MOSFET G - Low RDSon - Low input and Miller capacitance - Low gat

APT18M100B APT18M100S 1000V, 18A, 0.70 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKA proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance

APT4M120K 1200V, 5A, 3.80 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. TO-220A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of the poly-si

APTM100H45SCTG Full bridge VDSS = 1000V RDSon = 450m typ @ Tj = 25C Series & SiC parallel diodes ID = 18A @ Tc = 25C MOSFET Power Module Application Motor control VBUS Switched Mode Power Supplies Uninterruptible Power Supplies CR1A CR3AFeatures CR1B CR3B Power MOS 7 MOSFETs Q1 Q3- Low RDSon G1 G3- Low input and Miller capacitance OUT

APTM100A13SCG VDSS = 1000V Phase leg RDSon = 130m typ @ Tj = 25C Series & SiC parallel diodes ID = 65A @ Tc = 25C MOSFET Power Module Application Motor control VBUS Switched Mode Power Supplies Uninterruptible Power Supplies Q1Features G1 Power MOS 7 MOSFETs OUT- Low RDSon S1- Low input and Miller capacitance - Low gate charge Q2

APTC60AM18SCG Phase leg VDSS = 600V Series & SiC parallel diodes RDSon = 18m max @ Tj = 25C Super Junction ID = 143A @ Tc = 25C MOSFET Power Module Application VBUS Motor control Switched Mode Power Supplies Uninterruptible Power Supplies Q1Features G1 OUTS1- Ultra low RDSon - Low Miller capacitance - Ultra low gate charge Q2-

APT6M100K 1000V, 6A, 2.50 MAXN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of the poly-silicon ga

01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail: mail@electrum-av.com, www.electrum-av.com 2 1. ...

01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail: mail@electrum-av.com, www.electrum-av.com 2 1. ...

01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail: mail@electrum-av.com, www.electrum-av.com 2 1. ...

01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail: mail@electrum-av.com, www.electrum-av.com 2 1. ...

01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail: mail@electrum-av.com, www.electrum-av.com 2 1. ...

01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail: mail@electrum-av.com, www.electrum-av.com 2 1. ...

01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail: mail@electrum-av.com, www.electrum-av.com 2 1. ...

01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail: mail@electrum-av.com, www.electrum-av.com 2 1. ...

01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail: mail@electrum-av.com, www.electrum-av.com 2 1. ...

01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail: mail@electrum-av.com, www.electrum-av.com 2 1. ...

01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail: mail@electrum-av.com, www.electrum-av.com 2 1. ...

01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail: mail@electrum-av.com, www.electrum-av.com 2 1. ...

01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail: mail@electrum-av.com, www.electrum-av.com 2 1. ...

01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail: mail@electrum-av.com, www.electrum-av.com 2 1. ...

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01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail: mail@electrum-av.com, www.electrum-av.com 2 1. ...

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06.02.14 13C-30-6(12).doc " " 13C-30-6(12) 13C , - IGBT- FRD (

01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail: mail@electrum-av.com, www.electrum-av.com 2 1. ...

01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail: mail@electrum-av.com, www.electrum-av.com 2 1. ...

01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail: mail@electrum-av.com, www.electrum-av.com 2 1. ...

01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail: mail@electrum-av.com, www.electrum-av.com 2 1. ...

06.02.14 13C-30-6(12).doc " " 13C-30-6(12) 13C , - IGBT- FRD (

01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail: mail@electrum-av.com, www.electrum-av.com 2 1. ...

CEM1010Single N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES100V, 9.5A, RDS(ON) = 15.5m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.D D D DSurface mount Package.8 7 6 5SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise not

CEM1010Single N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES100V, 9.5A, RDS(ON) = 15.5m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.D D D DSurface mount Package.8 7 6 5SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise not

WTM1624NPN EPITAXIAL PLANAR TRANSISTORP b Lead(Pb)-Free1. BASE2. COLLECTOR3. EMITTER 123DescriptionThe WTM1624 applies to voltage regulators,SOT-89relay drivers,lamp drivers,and electrical equipment.FeaturesAdoption of FBET, MBIT processesLow collector-to-emitter saturation voltageFast switching speedLarge current capacity and wide ASOAbsolute Maximum Ratings a

WTM1797PNP EPITAXIAL PLANAR TRANSISTORP b Lead(Pb)-Free1. BASE2. COLLECTOR3. EMITTER 1FEATURES23* Low saturation voltage * Excellent DC current gain characteristicsSOT-89* Complements to 2SC4672MAXIMUM RATINGS (TA=25 unless otherwise noted)ParameterSymbol UnitsValueCollector-Base Voltage VCBO -50VCollector-Emitter Voltage VCEO -50 VEmitter-Base Voltage

WTM1766NPN EPITAXIAL PLANAR TRANSISTORP b Lead(Pb)-Free1. BASE2. COLLECTOR3. EMITTER 123SOT-89MAXIMUM RATINGS (TA=25 unless otherwise noted)ParameterSymbol UnitsValue40Collector-Base Voltage VCBO VCollector-Emitter Voltage VCEO 32 V5.0Emitter-Base Voltage VEBO VCollector Current -Continuous IC 2.0ACollector Power dissipation PC mW500Junction Temper

WPM1485 WPM1485 Single P-Channel, -12V, -7.4A, Power MOSFET Http//:www.willsemi.com V (V) Rds(on) () DS 0.016@ V =-4.5VGS -12 0.022@ V =-2.5VGS 0.032@ V =-1.8VGS DFN22-6L Descriptions D D S 6 5 4 The WPM1485 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench D technology and design to provide excellent RDS (ON) S with low

WPM1480 WPM1480 Http://www.sh-willsemi.com Single P-Channel, -20 V, -1.5 A,Power Mosfet Description 3The WPM1480 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is 1suitable for use in DC-DC conversion applications. Standard 2Product WPM1480 is Pb-free. SC-70/SOT-323Features V R Typ (BR)DSS DS(on) 20

WPM1483WPM1483Single P-Channel, -12V, -3.5A, Power MOSFET Http//:www.sh-willsemi.comVDS (V) Typical Rds(on) ()0.031@ VGS=4.5V-12 0.040@ VGS=2.5V0.056@ VGS=1.8VSOT-23DescriptionsThe WPM1483 is P-Channel enhancementMOS Field Effect Transistor. Uses advanced trenchtechnology and design to provide excellent RDS (ON)with low gate charge. This device is suitable f

WPM1481 WPM1481 Single P-Channel, -12V, -5.1A, Power MOSFET Http://www.sh-willsemi.com V (V) Typical Rds(on) () I (A)DS D 0.024@ V = - 4.5V -5.5 GS -12 0.032@ V = - 2.5V -4.0 GS 0.047@ V = - 1.8V -2.5 GS DFN2*2-6L Descriptions D D S 6 5 4 The WPM1481 is P-Channel enhancement MOS D Field Effect Transistor. Uses advanced trench technology and design to provi

WNM12N65/WNM12N65FWNM12N65/WNM12N65F650V N-Channel MOSFETDescription FeaturesCThe WNM12N65/WNM12N65F is N-Channel 650V@TJ=25enhancement MOS Field Effect Transistor. Uses Typ.RDS(on)=0.57advanced high voltage MOSFET Process and Low gate chargedesign to provide excellent RDS (ON) with low gate 100% avalanche testedcharge. This device is suitable for use in p

WPM1488WPM1488Single P-Channel, -12V, -1.4A, Power MOSFET www.sh-willsemi.comVDS (V) Typical Rds(on) () ID (A) 0.080@ VGS=4.5V -1.2 -12 0.086@ VGS=3.6V -1.0 0.105@ VGS=2.5V -1.0 SOT-323DescriptionsThe WPM1488 is P-Channel enhancementMOS Field Effect Transistor. Uses advancedtrench technology and design to provide excellentRDS (ON) with low gate charge. This de

Spec. No. : HM200102 HI-SINCERITY Issued Date : 2001.07.30 Revised Date : 2007.03.02 MICROELECTRONICS CORP. Page No. : 1/5 HM112 NPN EPITAXIAL PLANAR TRANSISTOR SOT-89 Description The HM112 is designed for use in general purpose amplifier and low-speed switching Darlington Schematic Capplications. Absolute Maximum Ratings (T =25C) A B Maximum Temperatures

Spec. No. : HM200101 HI-SINCERITY Issued Date : 2001.07.30 Revised Date : 2007.03.02 MICROELECTRONICS CORP. Page No. : 1/5 HM117 PNP EPITAXIAL PLANAR TRANSISTOR SOT-89 Description The HM117 is designed for use in general purpose amplifier and low-speed switching Darlington Schematic Capplications. Absolute Maximum Ratings (T =25C) A B Maximum Temperatures

AOTF15B65M1TM 650V, 15A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT(IGBT) technology 650V 650V breakdown voltage IC (TC=100 15AC) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.7VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficien

AOK20B65M1/AOT20B65M1/AOB20B65M1 650V, 20A Alpha IGBT TMWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest Alpha IGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 20A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 1.7V High efficient turn-on di/dt controllability Low VCE(sat) enab

AOT15B65M1/AOB15B65M1TM650V, 15A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 15A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 1.7V High efficient turn-on di/dt controllability Low VCE(SAT) enables high eff

AOT10B65M1/AOB10B65M1TM650V, 10A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100 10AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.6VC) High efficient turn-on di/dt controllability Low VCE(SAT) enables high

AOK20B65M1/AOT20B65M1/AOB20B65M1TM650V, 20A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest Alpha IGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 20A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 1.7V High efficient turn-on di/dt controllability Low VCE(sat) enab

AOT5B65M1/AOB5B65M1TM650V, 5A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100C) 5A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25C) 1.57V High efficient turn-on di/dt controllability Low VCE(SAT) enables high eff

AOTF5B65M1TM650V, 5A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltage IC (TC=100 5AC) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.57VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficienci

AOTF10B65M1TM650V, 10A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 10AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.6VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencie

AOT10B60M1TM 600V,10A Alpha IGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 600V 600V breakdown voltageIC (TC=100 10AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 2.3VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencie

AOT5B65M1/AOB5B65M1TM650V, 5A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100C) 5A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25C) 1.57V High efficient turn-on di/dt controllability Low VCE(SAT) enables high eff

AOK40B120M1TM1200V, 40A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest Alpha IGBT ( IGBT) technology 1200V 1200V breakdown voltage IC (TC=100C) 40A Fast and soft recovery freewheeling diode VCE(sat) (TJ=25C) 1.95V High efficient turn-on di/dt controllability High switching speed Low turn-o

AOK20B65M1/AOT20B65M1/AOB20B65M1TM650V, 20A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest Alpha IGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 20A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 1.7V High efficient turn-on di/dt controllability Low VCE(sat) enab

AOD5B65M1ETM650V, 5A AlphaIGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Very fast and soft recovery freewheeling diode 650V High efficient turn-on di/dt controllabilityIC (TC=100C) 5A Low VCE(sat) for low conduction lossesVCE(sat) (TJ=25C) 2.15V Soft switching performance and low EMI High electrostatic perfor

AOD5B65M1TM 650V, 5A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100C) 5A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25C) 1.57V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencies

AOT15B65M1/AOB15B65M1TM650V, 15A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 15A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 1.7V High efficient turn-on di/dt controllability Low VCE(SAT) enables high eff

AOD5B65M1HTM650V, 5A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100C) 5A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25C) 1.57V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencies

AOT10B65M1/AOB10B65M1TM650V, 10A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100 10AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.6VC) High efficient turn-on di/dt controllability Low VCE(SAT) enables high

AOD6B60M1TM600V, 6A AlphaIGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) Technology 600V 600V Breakdown VoltageIC (TC=100C) 6A Very Fast and Soft Recovery Freewheeling DiodeVCE(sat) (TJ=25C) 1.7V High Efficient Turn-On di/dt Controllability Low VCE(sat) Enables High Efficiencies L

AOT15B65M1/AOB15B65M1TM650V, 15A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 15A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 1.7V High efficient turn-on di/dt controllability Low VCE(SAT) enables high eff

AOTF20B65M1TM650V, 20A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 20AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.7VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencie

Analog Power AM1360NEN-Channel 60V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC VDS (V) rDS(on) () ID (A)converters and power management in portable and 3 @ VGS = 10 V 0.3battery-powered products such as

Analog Power AM1432NEN-Channel 30V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) () ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.033 @ VGS = 10 V 5.7battery-powered products su

Analog Power AM1323PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)150 @ VGS = -4.5V -1.3 Low thermal impedance -20190 @ VGS = -2.5V -1.1 Fast switching speed Typical Applications: SC70-3 Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLE

Analog Power AM10P10-530DP-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)530 @ VGS = -10V -6.9 Low thermal impedance -100720 @ VGS = -4.5V -6.0 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLU

Analog Power AM1936NEN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)90 @ VGS = 10V1.5 Low thermal impedance 30130 @ VGS = 4.5V1.3 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

Analog Power AM1370NN-Channel 180-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)1500 @ VGS = 10V0.39 Low thermal impedance 1801600 @ VGS = 4.5V0.38 Fast switching speed Typical Applications: SC70-3 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits

Analog Power AM10P15-550DP-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)550 @ VGS = -10V -7.8 Low thermal impedance -150650 @ VGS = -5.5V -7.2 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLU

Analog Power AM1523CEPRODUCT SUMMARYN & P-Channel 20-V (D-S) MOSFET rDS(on) (m)VDS (V) ID(A)90 @ VGS = 4.5V1.520120 @ VGS = 2.5V1.3Key Features: Key Features:200 @ VGS = -4.5V -1.0 Low r trench technology Low r trench technology DS(on)DS(on)-20370 @ VGS = -2.5V -0.5 Low thermal impedance Low thermal impedance Fast switching speed

Analog Power AM1320NN-Channel 20V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.058 @ VGS = 4.5 V 2.0battery-powered products suc

Analog Power AM110P06-06BP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)6 @ VGS = -10V Low thermal impedance -60 -907 @ VGS = -4.5V Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM R

Analog Power AM1340NN-Channel 40V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.086 @ VGS = 10 V 1.7battery-powered products such

Analog Power AM10P20-690DP-Channel 200-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)900 @ VGS = -10V -6.0 Low thermal impedance -200950 @ VGS = -5.5V -5.9 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOL

Analog Power AM1541CEThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) () ID (A)dissipation. Typical applications are DC-DC 140 @ V = 10V 1.2GSconverters and power management in portable and 40battery-powered products such as computers, 190 @

Analog Power AM10N30-600IN-Channel 300-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) (m) ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 600 @ VGS = 10V 7.5converters and power management in portable and 300900 @ VGS = 5.5V 6.1

Analog Power AM12N65PCFMN-Channel 650-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)800 @ VGS = 10V7 Low thermal impedance 650850 @ VGS = 6V6.5 Fast switching speed Typical Applications: Power Supplies Motor Drives Consumer Electronics ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTH

Analog Power AM1321PP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A)dissipation. Typical applications are DC-DC 0.079 @ VGS = -4.5V -1.7converters and power management in portable and -20battery-powered produc

Analog Power AM10P10-530IP-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)530 @ VGS = -10V -7.9 Low thermal impedance -100720 @ VGS = -4.5V -6.8 Fast switching speed Typical Applications: TO-251 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuit

Analog Power AM110N06-08PN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)8 @ VGS = 10V Low thermal impedance 60110a13 @ VGS = 4.5V Fast switching speed Typical Applications: White LED boost converters Automotive Systems DRAIN connected Industrial DC/DC Conversion Circuits

Analog Power AM1433PEP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A)dissipation. Typical applications are DC-DC 0.064 @ VGS = -10V -4.1converters and power management in portable and -30battery-powered produc

Analog Power AM1421PP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A)dissipation. Typical applications are DC-DC 0.079 @ VGS = -4.5V -3.7converters and power management in portable and -20battery-powered produc

Analog Power AM12N65PN-Channel 650-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)800 @ VGS = 10V Low thermal impedance 65012a850 @ VGS = 6V Fast switching speed Typical Applications: White LED boost converters Automotive Systems DRAIN connected Industrial DC/DC Conversion Circuits

Analog Power AM1400NEN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)1100 @ VGS = 10V1 Low thermal impedance 1501200 @ VGS = 4.5V0.9 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI

Analog Power AM1922NEN-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) (m) ID (A)rDS(on) and to ensure minimal power loss and heat 88 @ VGS = 4.5V 1.6dissipation. Typical applications are DC-DC 20converters and power management in portable and 120 @ VGS = 2.5V 1.3batt

Analog Power AM1331PP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A)dissipation. Typical applications are DC-DC 0.112 @ VG = -10V -1.5converters and power management in portable and S-30battery-powered produ

Analog Power AM1561CEPRODUCT SUMMARYN & P-Channel 60-V (D-S) MOSFET rDS(on) (m)VDS (V) ID (A)250 @ VGS = 10V0.960330 @ VGS = 4.5V0.8Key Features: Key Features:700 @ VGS = -10V -0.6 Low r trench technology Low r trench technology DS(on)DS(on)-60800 @ VGS = -4.5V -0.5 Low thermal impedance Low thermal impedance Fast switching speed

Analog Power AM1580CEPRODUCT SUMMARYN & P-Channel 80-V (D-S) MOSFETrDS(on) (m)VDS (V) ID (A)740 @ VGS = 10V0.5280810 @ VGS = 4.5V0.50Key Features: 3300 @ VGS = -10V -0.25 Low r trench technology DS(on)-803400 @ VGS = -4.5V -0.24 Low thermal impedance Fast switching speed SC70-6 Typical Applications: LED Inverter Circuits DC/DC Conver

Analog Power AM1925PEP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)160 @ VGS = -4.5V -1.2 Low thermal impedance -20210 @ VGS = -2.5V -1.1 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MA

Analog Power AM1960NEDual N-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) ()VDS (V) ID (A) Low r trench technology DS(on)2 @ VGS = 10V0.32 Low thermal impedance 603 @ VGS = 4.5V0.26 Fast switching speed Typical Applications: DC/DC Conversion Circuits Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTHERWISE NOTED)

Analog Power AM1330NN-Channel 30V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.058 @ VGS = 10 V 2.0battery-powered products such

Analog Power AM1430NN-Channel 30V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.058 @ VGS = 10 V 4.3battery-powered products such

Analog Power AM1590CEPRODUCT SUMMARYN & P-Channel 100-V (D-S) MOSFETrDS(on) ()VDS (V) ID (A)1.2 @ VGS = 10V0.421001.5 @ VGS = 4.5V0.37Key Features: 5.5 @ VGS = -10V -0.20 Low r trench technology DS(on)-1006 @ VGS = -4.5V -0.19 Low thermal impedance Fast switching speed SC70-6 Typical Applications: LED Inverter Circuits DC/DC Conversi

Analog Power AM1963PEDual P-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)700 @ VGS = -10V -0.57 Low thermal impedance -60860 @ VGS = -4.5V -0.52 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSO

Analog Power AM1420NN-Channel 20V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.058 @ VGS = 4.5 V 4.3battery-powered products suc

Analog Power AM1440NN-Channel 40V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.086 @ VGS = 10 V 3.5battery-powered products such

Analog Power AM1434NN-Channel 30V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) () ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.035 @ VGS = 4.5 V 5.5battery-powered products su

Analog Power AM1431PP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A)dissipation. Typical applications are DC-DC 0.112 @ VGS = -10V -3.1converters and power management in portable and -30battery-powered product

Analog Power AM1535CEThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) () ID (A)dissipation. Typical applications are DC-DC 0.09 @ V = 4.5V 1.5GSconverters and power management in portable and 30battery-powered products such as computers, 0.18

Analog Power AM110P08-11BP-Channel 80-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)11.2 @ VGS = -10V Low thermal impedance -80-110a14.5 @ VGS = -5.5V Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE

Analog Power AM10P20-1400DP-Channel 200-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)1400 @ VGS = -10V -4.9 Low thermal impedance -2001600 @ VGS = -5.5V -4.6 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits AB

Analog Power AM1537CEPRODUCT SUMMARYN & P-Channel 30-V (D-S) MOSFETrDS(on) (m)VDS (V) ID (A)90 @ VGS = 10V1.530130 @ VGS = 4.5V1.2Key Features: 190 @ VGS = -10V1.0 Low r trench technology DS(on)-30290 @ VGS = -4.5V0.8 Low thermal impedance Fast switching speed SC70-6 Typical Applications: DC/DC Conversion Power Routing Moto

PNP HIGH VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR RBM1P40A APPLICATIONS Electronic ballasts High frequency power transform Commonly power amplifier circuit FEATURES Medium voltage capability

GrPPrPPSTM121NaS mHop Microelectronics C orp.Ver 1.1Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m ) MaxRugged and reliable.155 @ VGS=10VSuface Mount Package.100V 2.8A192 @ VGS=4.5V5 4D2 G 26D2 3S 2D1 7 2 G 1SO-88 1D1 S 11(TA=25C unless other

GreenProduct STM105NaS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.100V 6A 31 @ VGS=10VSuface Mount Package.SO-81ABSOLUTE MAXIMUM RATINGS (TA=25C unless otherwise noted)Symbol Parameter UnitsLimitVDS Drai

GrPPrPPSTM122NaS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m ) MaxVDSS IDRugged and reliable.100 @ VGS=10VSuface Mount Package.100V 3.4A125 @ VGS=4.5VD2 5 4 G 26D2 3S 2D1 7 2G 1SO-8D1 8 1S 11(TA=25C unless othe

GreenProduct STM101NaS mHop Microelectronics C orp.Ver1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) TypVDSS IDRugged and reliable.170 @ VGS=10VSuface Mount Package.100V 3A260 @ VGS=4.5VS O-81C(TA=25 unless otherwise noted)ABSOLUTE MAXIMUM RATINGSSymbol Parameter

GPPSTM102DaS mHop Microelectronics C orp.Ver 1.0Dual Enhancement Mode Field Effect Transistor (N and P Channel)PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID VDSS ID216 @ VGS=10V 547 @ VGS=-10V100V 2.0A-100V -1.3A328 @ VGS=4.5V 614 @ VGS=-4.5VD2 5 4 G 26D2 3 S 2D1 7 2G 1SO-8D1 8 1S 11(TC=25C unl

SSFM1022Main Product Characteristics: VDSS 100V SSFT3906SSFT3906SSFM1022SSFM1022RDS(on) 19mohmID 40A Marking and pin Schematic diagramFeatures and Benefits: TO220Assignment Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching a

SEMICONDUCTOR48.525 25C2E1 E2 C13-M693+0.3 4- 6.5108+0.514 14 14 2.84-0.5All dimensions in millimeters271517.848+0.362.5+0.5G1 E1E2 G230.930.522.5SEMICONDUCTORRoHS RoHS SEMICONDUCTORSEMICONDUCTORSEMICONDUCTORSEMICONDUCTOR

RoHS NSGM100GB Series RoHS SEMICONDUCTORIGBT Module (2 in one-package), 100A Features1. High frequency operation2. Low losses and soft switching3. Isolated baseplate for easy heat sinking 4. Discrete super-fast recovery free-wheel diode5. Small temperature dependence of the turn-off switching loss40+0.5 3-M5.0 Typical Applications23+0.5 23+0.5AC Motor ControlDC Motor

SM1C02NSUN-Channel Enhancement Mode MOSFETFeatures Pin Description 120V/50A,D RDS(ON)= 22m (max.) @ VGS= 10VS Reliable and RuggedG Lead Free and Green Devices Available (RoHS Compliant)Top View of TO-252-3D (2)ApplicationsG (1) Power Management in TV Converter. DC-DC Converter.S (3)N-Channel MOSFETOrdering and Marking InformationPackage CodeSM1C02NS

SM1C02NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 120V/50A, RDS(ON)= 22m(max.) @ VGS= 10V Reliable and RuggedS Lead Free and Green Devices AvailableDG (RoHS Compliant)Top View of TO-220D (2)Applications High Efficiency Synchronous Rectification inG (1) SMPS. Uninterruptible Power Supply. Hard Switched and High Frequency Circui

SM1A40CSQDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N Channel100V/2.3A, D2D1D2D1RDS(ON) = 162m (max.) @ VGS = 10VG2RDS(ON) = 182m (max.) @ VGS = 4.5VS2S1G1RDS(ON) = 203m (max.) @ VGS = 4.0V P Channel Top View of DFN3x3C-8-100V/-1.6A,RDS(ON) = 350m (max.) @ VGS =-10V (8) (7) (6) (5)D1 D1 D2 D2RDS(ON) = 405m (max.) @ VGS =-4.5V

SM1F14NSKP N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 150V/18A,DDDRDS(ON)=70m (max.) @ VGS=10V 100% UIS + Rg TestedGPin 1S Reliable and Rugged SS Lead Free and Green Devices AvailableDFN5x6A-8_EP(RoHS Compliant)(5,6,7,8)DDDDApplications(4) G Power Management in TV Converter. DC-DC Converter.S S S( 1, 2, 3 )N-Channel MOSFET

SM1A54NHUN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 100V/50A,SRDS(ON)= 14.4m (max.) @ VGS=10V 100% UIS + Rg TestedG Reliable and RuggedTop View of TO-252-2 Lead Free and Green Devices Available(RoHS Compliant)DApplicationsG Power Management for SMPS. DC-DC Converter.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM1A5

SM1202NSAS N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 30V/0.35A , RDS(ON)= 700m (max.) @ VGS=4.5VSRDS(ON)= 1000m (max.) @ VGS=2.5VGRDS(ON)= 1600m (max.) @ VGS=1.8VRDS(ON)= 5000m (max.) @ VGS=1.5VTop View of SOT-723 Reliable and RuggedD Lead Free and Green Devices Available(RoHS Compliant) ESD ProtectionGApplications High Speed Switching.

SM1A50NHFN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/200A a,RDS(ON)= 3.2m (max.) @ VGS=10V 100% UIS + Rg TestedSD Reliable and RuggedG Lead Free and Green Devices AvailableTop View of TO-220(RoHS Compliant)DApplicationsG Synchronous Rectification. Power Management in Inverter Systems. Motor Driver. Uninterruptible Power Supply.SN-

SM1A11NSUB N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/24A, RDS(ON)= 45m (Max.) @ VGS=10VS Reliable and RuggedDG Lead Free and Green Devices AvailableTop View of TO-251(RoHS Compliant) 100% UIS + Rg TestedDApplicationsG High Speed Switching. High Voltage Synchronous Rectification forS Industrial Application.N-Channel MOS

SM1A25NSVN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 100V/3.3A, RDS(ON)= 162m (max.) @ VGS= 10VG RDS(ON)= 180m (max.) @ VGS= 4.5VDS Reliable and Rugged Lead Free and Green Devices AvailableTop View SOT-223 (RoHS Compliant)D (2)ApplicationsG (1) Power Management in DC/DC Converter.S (3)N-Channel MOSFETOrdering and Marking InformationPackag

SM1A23DSK Dual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1D1D2 100V/3.5A,D2 RDS(ON)= 100m (max.) @ VGS= 10V RDS(ON)= 110m (max.) @ VGS= 4.5VS1G1 ESD protectedS2G2 Reliable and RuggedTop View of SOP-8 Lead Free and Green Devices Available (RoHS Compliant)D1 D1 D2 D2Applications Power Management in DC/DC Converter.G1 G2S1 S2N-Chann

SM1A11NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/24A,Drain 4 RDS(ON)= 45m (Max.) @ VGS=10V3Source2 Reliable and Rugged1Gate Lead Free and Green Devices Available(RoHS Compliant)Top View of TO-252-3DApplicationsG High Speed Switching. High Voltage Synchronous Rectification forS Industrial Application.N-Channel MOSFETOrderi

SM1F01NFN-Channel Enhancement Mode MOSFETFeatures Pin Description 150V/80A, RDS(ON)= 16m (max.) @ VGS= 10V Reliable and RuggedSDG Lead Free and Green Devices AvailableTop View of TO-220(RoHS Compliant)DApplicationsG Synchronous Rectification. Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM1F01N

SM1A16PSV P-Channel Enhancement Mode MOSFETFeatures Pin Configuration -100V/-2.5A,RDS(ON)=205m (max.) @ VGS=-10VGRDS(ON)=260m (max.) @ VGS=-4.5VDS Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-223(RoHS Compliant)DApplicationsG Power Management in Desktop Computer orDC/DC Converters.SP-Channel MOSFETOrdering and Marking Informa

SM1A23NSVN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/4.2A, RDS(ON)= 100m (max.) @ VGS= 10VG RDS(ON)= 110m (max.) @ VGS= 4.5VDS Reliable and Rugged Lead Free and Green Devices AvailableTop View SOT-223 (RoHS Compliant)D (2)ApplicationsG (1) Power Management in DC/DC Converter.S (3)N-Channel MOSFETOrdering and Marking InformationPackage C

SM1A16PSU/UB P-Channel Enhancement Mode MOSFETFeatures Pin Configuration -100V/-13A,DRDS(ON)=205m (max.) @ VGS=-10VSRDS(ON)=300m (max.) @ VGS=-4VSDG Reliable and RuggedG Lead Free and Green Devices AvailableTop View of TO-252-2 Top View of TO-251(RoHS Compliant) 100% UIS + Rg Tested DGApplications Power Management in Desktop Computer orDC/DC Conve

SM1A20NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/40A,Drain 4 RDS(ON)= 28m (Max.) @ VGS=10V3Source2 RDS(ON)= 32m (Max.) @ VGS=4.5V1Gate Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-3 (RoHS Compliant)DApplicationsG Power Management in DC/DC Converter.SN-Channel MOSFETOrdering and Marking Informa

SM1102PSFP-Channel Enhancement Mode MOSFETFeatures Pin Description -100V/-27A,RDS(ON)= 42m (Max.) @ VGS=-10VRDS(ON)= 52m (Max.) @ VGS=-4.5VSD Reliable and RuggedG Lead Free and Green Devices Available Top View of TO-220(RoHS Compliant)SApplicationsG Power Management in DC/DC Converters andBattery Powered SystemDP-Channel MOSFETOrdering and Marking Inf

SM1A12DSK Dual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1D1D2 100V/3.5A,D2 RDS(ON)= 101m (max.) @ VGS= 10V RDS(ON)= 114m (max.) @ VGS= 4.5VS1G1 ESD protecedS2G2 Reliable and RuggedTop View of SOP-8 Lead Free and Green Devices Available (RoHS Compliant)D1 D1 D2 D2Applications Power Management in DC/DC Converter.G1 G2S1 S2N-Channe

APM1106K Dual Enhancement Mode MOSFET (N- and P-Channel)Features Pin DescriptionD1 N-ChannelD1D2D2100V/2A,RDS(ON) = 220m (max.) @ VGS = 10VS1RDS(ON) = 310m (max.) @ VGS = 4VG1S2 P-ChannelG2-100V/-2A,Top View of SOP-8RDS(ON) = 225m (max.) @ VGS = -10VRDS(ON) = 315m (max.) @ VGS = -4V(8) (7) (6) (5)D1 D1 D2 D2 Super High Dense Cell Design

SM1A30NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/18A, D RDS(ON)= 70m (max.) @ VGS= 10VS RDS(ON)= 80m (max.) @ VGS= 4.5VG 100% UIS + Rg Tested Reliable and RuggedTop View of TO-252-2 Lead Free and Green Devices AvailableD (RoHS Compliant)ApplicationsG Power Management in DC/DC Converter. For LED Backlight DC-DC Boost ConverterS So

SM1A01NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/53A,RDS(ON)=22m (max.) @ VGS=10V Reliable and RuggedSD Lead Free and Green Devices AvailableG(RoHS Compliant)Top View of TO-220DApplications Power Management in TV Inverter.GSN-Channel MOSFETOrdering and Marking InformationPackage CodeSM1A01NS F : TO-220Assembly MaterialOper

SM1A32NSUN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/34A,Drain 4 RDS(ON)= 29m(max.) @ VGS= 10V RDS(ON)= 34m(max.) @ VGS= 4.5V 3 Source2 Reliable and Rugged1 Gate Lead Free and Green Devices Available (RoHS Compliant)Top View of TO-252-3DApplicationsG For telecom PSE solution.SN-Channel MOSFETOrdering and Marking InformationPac

SM1A40CSKDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N ChannelD1D1D2100V/2.5A,D2RDS(ON) = 155m (max.) @ VGS = 10VRDS(ON) = 175m (max.) @ VGS = 4.5VS1G1RDS(ON) = 195m (max.) @ VGS = 4.0VS2G2 P ChannelTop View of SOP-8-100V/-1.7A,RDS(ON) = 345m (max.) @ VGS =-10V (8) (7) (6) (5)D1 D1 D2 D2RDS(ON) = 400m (max.)

SM1A00NSG N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 100V/180Aa, RDS(ON)= 4m (Max.) @ VGS=10VS Reliable and RuggedG Lead Free and Green Devices Available Top View of TO-263-3(RoHS Compliant)DApplicationsG Synchronous Rectification. Power Management in Inverter Systems. Motor Driver. Uninterruptible Power Supply.SN-Cha

SM1A63NHKN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 100V/12A, DD RDS(ON)= 10.5m(max.) @ VGS= 10V RDS(ON)= 13.3m(max.) @ VGS= 4.5VSS 100% UIS + Rg TestedSG Reliable and RuggedTop View of SOP-8 Lead Free and Green Devices Available (RoHS Compliant)(5,6,7,8)D D DDApplications Power Management for SMPS.(4) G DC-DC Converter.

SM1A01NSFPN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/25A,RDS(ON)=22m (max.) @ VGS=10V Reliable and RuggedSDG Lead Free and Green Devices Available(RoHS Compliant) Top View of TO-220FPDApplicationsG Converter Application in LED TV.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM1A01NS FP : TO-220FPAssembly Mat

SM1F00NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 150V/108A, RDS(ON)= 10.5m (max.) @ VGS= 10V Reliable and RuggedSD Lead Free and Green Devices Available G(RoHS Compliant)Top View of TO-220DApplicationsG Synchronous Rectification. Uninterruptible Power Supply. Montion Control Applications.SN-Channel MOSFETOrdering and Marking Informatio

SM1A06NSKP N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 100V/52A, DDDRDS(ON)=17.5m (Max.) @ VGS=10V Reliable and RuggedGPin 1SS Lead Free and Green Devices AvailableS(RoHS Compliant)DFN5x6-8(5,6,7,8)DDDDApplications DC-DC Converter.(4) G Motor Control.S S S( 1, 2, 3 )N-Channel MOSFETOrdering and Marking InformationPackage C

SM1200NSAS N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 60V/0.2A , RDS(ON)=2.2 (max.) @ VGS=10VS RDS(ON)=2.6 (max.) @ VGS=4.5VG ESD Protection : HBM=(+/-)1600V MM=(+/-)100VTop View of SOT-723 Lead Free and Green Devices AvailableD Reliable and Rugged(RoHS Compliant)Applications G High Speed and Analog Switching Applications Low voltage drive (

SM1F04NSFPN-Channel Enhancement Mode MOSFETFeatures Pin Description 150V/58A, RDS(ON)= 13.5m(max.) @ VGS= 10V Reliable and Rugged Lead Free and Green Devices AvailableSD (RoHS Compliant)G 100% UIS + Rg TestedTop View of TO-220FPDApplicationsG Synchronous Rectification. Montion Control Applications.SN-Channel MOSFETOrdering and Marking Information

SM1A53NHUBN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/70A, RDS(ON)= 10m (max.) @ VGS= 10V 100% UIS + Rg TestedSD Reliable and RuggedG Lead Free and Green Devices AvailableTop View of TO-251 (RoHS Compliant)D (2)ApplicationsG (1) Power Management for SMPS. DC-DC Converter.S (3)N-Channel MOSFETOrdering and Marking InformationPackage

SM1A35PSUP-Channel Enhancement Mode MOSFETFeatures Pin Description -100V/-18A,Drain 4 RDS(ON)= 90m(max.) @ VGS=-10V3 SourceRDS(ON)= 102m(max.) @ VGS=-4.5V 21 Gate Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-3(RoHS Compliant) 100% UIS TestedD ESD Protection HBM ESD protection level pass 8KVNote : The diode connected betw

SM1A11NSF N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/24A, RDS(ON)= 45m (Max.) @ VGS=10V Reliable and RuggedSD Lead Free and Green Devices Available G(RoHS Compliant) Top View of TO-220DApplicationsG High Speed Switching. High Voltage Synchronous Rectification forS Industrial Application.N-Channel MOSFET Fully Avalanche Rated.Ordering

SM1F12NSUB N-Channel Enhancement Mode MOSFETFeatures Pin Description 150V/35A, RDS(ON)= 38m(max.) @ VGS= 10VS 100% UIS + Rg TestedDG Reliable and RuggedTop View of TO-251 Lead Free and Green Devices Available (RoHS Compliant)DApplicationsG Power Management in TV Converter. DC-DC Converter.SN-Channel MOSFETOrdering and Marking InformationPackage C

SM1A02NSFPN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/90A, RDS(ON)= 7.2m(max.) @ VGS= 10V Reliable and RuggedSDG Lead Free and Green Devices Available(RoHS Compliant)Top View of TO-220FP 100% UIS + Rg TestedDApplicationsG Synchronous Rectification Power Management in Inverter Systems Motor DriverSN-Channel MOSFETOrd

SM1A15PSF P-Channel Enhancement Mode MOSFETFeatures Pin Configuration -100V/-16A,RDS(ON)=105m (max.) @ VGS=-10V Super High Dense Cell DesignS Reliable and RuggedDG Lead Free and Green Devices Available (RoHS Compliant) Top View of TO-220DApplicationsG Application for Welding Machine.SP-Channel MOSFETOrdering and Marking InformationPackage CodeSM1A15P

SM1A54NHFPN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/42A,RDS(ON)= 14.4m (max.) @ VGS=10V 100% UIS + Rg TestedSD Reliable and RuggedG Lead Free and Green Devices AvailableTop View of TO-220FP(RoHS Compliant)DApplicationsG High Efficiency Synchronous Rectification in SMPS. Uninterruptible Power Supply. Hard Switched and High Frequency

SM1F14NSFPN-Channel Enhancement Mode MOSFETFeatures Pin Description 150V/18A, RDS(ON)= 70m(max.) @ VGS= 10V Reliable and RuggedS Lead Free and Green Devices AvailableDG (RoHS Compliant) 100% UIS + Rg TestedTop View of TO-220FPDApplicationsG DC-DC Converter Switching for Networkong. General Purpose Switching.SN-Channel MOSFETOrdering and Marking Inf

SM1A01NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/35A,D RDS(ON)=25m (Max.) @ VGS=10VS RDS(ON)=40m (Max.) @ VGS=5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-3(RoHS Compliant)DApplicationsG Power Management in TV Converter. DC-DC Converter.SN-Channel MOSFETOrdering and Marking Info

SM1F33PSUP-Channel Enhancement Mode MOSFETFeatures Pin Description -150V/-10A,DRDS(ON)= 290m (max.) @ VGS=-10VS 100% UIS + Rg Tested Reliable and Rugged G Lead Free and Green Devices AvailableTop View of TO-252-2 (RoHS Compliant)DApplications Power Management for Industrial DC / DCG Converters. Load switch.SP-Channel MOSFETOrdering and Marking Informa

APM1110NU/APM1110NUBN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/10A,D RDS(ON)= 175m (max.) @ VGS=10VS RDS(ON)= 235m (max.) @ VGS=4.5VSDG ESD Protected G Reliable and RuggedTop View of TO-251Top View of TO-252-3 Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in TV Inverter.SN-Chan

SM1660DSCS Dual N-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/0.26A,S2 RDS(ON)= 2.2 (max.) @ VGS=10VG2D2 RDS(ON)= 2.6 (max.) @ VGS=4.5VD1G1S1 Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-363(RoHS Compliant)(6)D1(3)D2 ESD Protection(2)(5)ApplicationsG1G2 Load switch. High-speed line driver.(1)S1(4

SM1A18NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDD 100V/3.5A, DRDS(ON) =100m(max.) @ VGS =10VRDS(ON) =130m(max.) @ VGS =4.5VGSSS Avalanche RatedDFN3x3D-8_EP 100% UIS + Rg Tested Reliable and Rugged( 5,6,7,8 ) Lead Free and Green Devices Available D D D D(RoHS Compliant)(4)ApplicationsG DC-DC Conversion Networking Swit

SM1F08NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 150V/14A, D RDS(ON)= 110m (max.) @ VGS= 10VS Reliable and RuggedG Lead Free and Green Devices Available (RoHS Compliant) Top View of TO-252-3DApplicationsG Power Management in TV Converter. DC-DC Converter.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM1F08NS U : TO-25

SM1F03NSFPN-Channel Enhancement Mode MOSFETFeatures Pin Description 150V/13A, RDS(ON)= 65m (max.) @ VGS= 10V RDS(ON)= 80m (max.) @ VGS= 5V Reliable and RuggedSD Lead Free and Green Devices AvailableG (RoHS Compliant)Top View of TO-220FPDApplicationsG DC-DC converter switching for Networkong General purpose switchingSN-Channel MOSFETOrdering and Markin

SM1A21NSKPN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/52A,DDDD RDS(ON)= 17.5m (max.) @ VGS= 10V RDS(ON)= 21m (max.) @ VGS= 4.5V 100% UIS + Rg TestedGS Pin 1SS Reliable and RuggedDFN5x6A-8_EP Lead Free and Green Devices Available( 5,6,7,8 ) (RoHS Compliant)D D DDApplications(4)G DC-DC Converter. Motor Control.S S S(1, 2

SM1A08NSVN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/8A, RDS(ON)= 29m (max.) @ VGS= 10VGD RDS(ON)= 32m (max.) @ VGS= 6VS Reliable and RuggedTop View SOT-223 Lead Free and Green Devices Available (RoHS Compliant)DApplications LED Application SystemG Networking Application System Power Management in TV InverterSN-Channel MOSFETOrdering

SM1A53NHUN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/70A,D RDS(ON)= 10m (max.) @ VGS= 10VS 100% UIS + Rg TestedG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-2 (RoHS Compliant)D (2)ApplicationsG (1) Power Management for SMPS. DC-DC Converter.S (3)N-Channel MOSFETOrdering and Marking InformationPackag

SM1F02NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 150V/35A, D RDS(ON)= 46m (max.) @ VGS= 10VS RDS(ON)= 52m (max.) @ VGS= 6VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-3 (RoHS Compliant)DApplicationsG Power Management in TV Converter. DC-DC Converter.SN-Channel MOSFETOrdering and Marking InformationPa

SM1A20NSFP N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/28A, RDS(ON)= 28m (Max.) @ VGS=10V RDS(ON)= 32m (Max.) @ VGS=4.5VSD Reliable and RuggedG Lead Free and Green Devices AvailableTop View of TO-220FP (RoHS Compliant)D 100% UIS + Rg TestedApplicationsG Power Management in DC/DC Converter. Boost Converters. Synchronous Rectif

SM1A23NSUN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/15A,D RDS(ON)= 100m (max.) @ VGS= 10VS RDS(ON)= 110m (max.) @ VGS= 4.5V 100% UIS + Rg TestedG ESD ProtectionTop View of TO-252-2 Reliable and Rugged Lead Free and Green Devices AvailableD (2) (RoHS Compliant)G (1)Applications Power Management in DC/DC Converter.S (3)N-Channel MOSF

SM1105NSVN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/3.5A, RDS(ON)= 105m (max.) @ VGS= 10VG RDS(ON)= 175m (max.) @ VGS= 4.5VDS ESD proteced Reliable and RuggedTop View SOT-223 Lead Free and Green Devices Available (RoHS Compliant)DApplications Power Management in TV Inverter.GSN-Channel MOSFETOrdering and Marking InformationPackage Co

SM1A20NSKN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 100V/8A,DD RDS(ON)= 28m (max.) @ VGS= 10V RDS(ON)= 32m (max.) @ VGS= 4.5VS Reliable and RuggedSSG Lead Free and Green Devices AvailableTop View of SOP-8 (RoHS Compliant)( 5,6,7,8 )D D D DApplications(4) Power Management in DC/DC Converter.GS S S(1, 2, 3)N-Channel MOSFET

SM1A53NHFPN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/50A,RDS(ON)=10m (max.) @ VGS=10V 100% UIS + Rg TestedSD Reliable and RuggedG Lead Free and Green Devices AvailableTop View of TO-220FP(RoHS Compliant)DApplicationsG High Efficiency Synchronous Rectification in SMPS. Uninterruptible Power Supply. Hard Switched and High Frequency Cir

SM1A10NSUN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/10A,DRDS(ON)=175m (max.) @ VGS=10VSRDS(ON)=235m (max.) @ VGS=4.5VG ESD Protected Reliable and RuggedTop View of TO-252-3 Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in TV Inverter.SN-Channel MOSFETOrdering and Marking InformationPackage C

SM1F03NSKN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 150V/5A,DD RDS(ON)= 65m (max.) @ VGS= 10V RDS(ON)= 80m (max.) @ VGS= 5VS Reliable and RuggedSSG Lead Free and Green Devices AvailableTop View of SOP-8 (RoHS Compliant)( 5,6,7,8 )D D D D(4)ApplicationsG DC-DC converter switching for Networkong General purpose switchingS S S

SM1A11NSFP N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/20A, RDS(ON)= 45m (Max.) @ VGS=10V Reliable and RuggedSD Lead Free and Green Devices AvailableG(RoHS Compliant)Top View of TO-220FP 100% UIS + Rg TestedDApplicationsG High Efficiency Synchronous Rectification in SMPS. Uninterruptible Power Supply. Hard Switched and

SM1402NSS N-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/0.4A,D RDS(ON)= 2.2(max.) @ VGS=10VS RDS(ON)= 2.6(max.) @ VGS=4.5VG ESD ProtectionTop View of SC-70 Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications High Speed Switching. Analog Switching Application.SN-Channel MOSFETOrdering and Ma

SM1A16PSU/UB P-Channel Enhancement Mode MOSFETFeatures Pin Configuration -100V/-13A,DRDS(ON)=205m (max.) @ VGS=-10VSRDS(ON)=300m (max.) @ VGS=-4VSDG Reliable and RuggedG Lead Free and Green Devices AvailableTop View of TO-252-2 Top View of TO-251(RoHS Compliant) 100% UIS + Rg Tested DGApplications Power Management in Desktop Computer orDC/DC Conve

SM1A54NHFN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/50A,RDS(ON)= 14.4m (max.) @ VGS=10V 100% UIS + Rg TestedSD Reliable and RuggedG Lead Free and Green Devices AvailableTop View of TO-220(RoHS Compliant)DApplicationsG Power Management for SMPS. DC-DC Converter.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM1A54N

SM1A00NSF N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/180Aa, RDS(ON)= 4.2m (Max.) @ VGS=10V Reliable and RuggedSD Lead Free and Green Devices Available G(RoHS Compliant) Top View of TO-220DApplicationsG Synchronous Rectification. Power Management in Inverter Systems. Motor Driver. Uninterruptible Power Supply.SN-Channel MOSFETOrdering

SM1105NSUBN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/16A,RDS(ON)= 100m (max.) @ VGS=10VSRDS(ON)= 170m (max.) @ VGS=4.5VDG ESD ProtectedTop View of TO-251 Reliable and RuggedD Lead Free and Green Devices Available(RoHS Compliant)GApplications Power Management in TV Inverter.SN-Channel MOSFETOrdering and Marking InformationPackage

SM1691OSCS Single N-Channel Enhancement Mode MOSFETwith Schottky DiodeFeatures Pin Description Channel 1 (NMOS) 60V/0.26A,S2 RDS(ON)= 2.2 (max.) @ VGS=10VNCD2 RDS(ON)= 2.6 (max.) @ VGS=4.5V D1S1G1 Channel 2 (Schottky Diode) 40V/0.35A,Top View of SOT-363Vf= 0.4V(max.) @ IF=0.02A(6)D1(3)D2 Vf= 0.6V(max.) @ IF=0.2A Reliable and Rugged Lead Free and Green

SM1A25NSUN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/10A,D RDS(ON)= 162m (max.) @ VGS= 10VS RDS(ON)= 180m (max.) @ VGS= 4.5V Reliable and RuggedG Lead Free and Green Devices Available (RoHS Compliant) Top View of TO-252D (2)ApplicationsG (1) Power Management in TV Inverter.S (3)N-Channel MOSFETOrdering and Marking InformationPackage C

SM1A27PSU P-Channel Enhancement Mode MOSFETFeatures Pin Configuration -100V/-11A,DRDS(ON)=205m (max.) @ VGS=-10VS Reliable and RuggedG Lead Free and Green Devices Available(RoHS Compliant)Top View of TO-252-3DApplicationsG Application for Textile Machine.SP-Channel MOSFETOrdering and Marking InformationSM1A27PSPackage Code U : TO-252-3Assembly Mater

APM1110K N-Channel Enhancement Mode MOSFETFeatures Pin ConfigurationDDD 100V/2.7A,DRDS(ON)=140m (typ.) @ VGS=10VRDS(ON)=185m (typ.) @ VGS=4.5VSS ESD Protected SG Reliable and RuggedTop View of SOP-8 Lead Free and Green Devices Available(8, 7, 6, 5)D D D D(RoHS Compliant)Applications(4) G Power Management in TV Inverter.S S S(1, 2, 3)N-Ch

SM1A06NSKN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 100V/7A, DD RDS(ON)= 18m (max.) @ VGS= 10V 100% UIS + Rg TestedSS Reliable and Rugged SG Lead Free and Green Devices AvailableTop View of SOP-8 (RoHS Compliant)(5,6,7,8)DDDDApplications(4) G DC-DC Converter. Secondary Side Synchronous Rectification.S S S( 1, 2, 3 )N-Channel M

SM1F03NSUN-Channel Enhancement Mode MOSFETFeatures Pin Description 150V/24A,Drain 4 RDS(ON)= 65m (max.) @ VGS= 10V3 Source Reliable and Rugged2 Lead Free and Green Devices Available1 Gate (RoHS Compliant)Top View of TO-252-3DApplicationsG DC-DC converter switching for Networkong General purpose switchingSN-Channel MOSFETOrdering and Marking Informatio

SM1A15NSFPN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/16A,RDS(ON)=44m (max.) @ VGS=10V Reliable and RuggedSD Lead Free and Green Devices AvailableG(RoHS Compliant)Top View of TO-220FPDApplicationsG DC-DC Conversion. Networking Switch.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM1A15NS FP : TO-220FPAssembly Ma

SM1A01NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/53A,RDS(ON)=22m (max.) @ VGS=10V Reliable and RuggedSD Lead Free and Green Devices AvailableG(RoHS Compliant)Top View of TO-220DApplications Power Management in TV Inverter.GSN-Channel MOSFETOrdering and Marking InformationPackage CodeSM1A01NS F : TO-220Assembly Material

SM1A27PSUB P-Channel Enhancement Mode MOSFETFeatures Pin Configuration -100V/-11A,RDS(ON)= 190m (max.) @ VGS=-10VS Reliable and RuggedDG Lead Free and Green Devices AvailableTop View of TO-251(RoHS Compliant) 100% UIS + Rg TestedDApplicationsG Application for Textile Machine.SP-Channel MOSFETOrdering and Marking InformationPackage CodeSM1A27PS UB

SM1A52NHFN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/120A,RDS(ON)=4.5m (max.) @ VGS=10V 100% UIS + Rg TestedSD Reliable and RuggedG Lead Free and Green Devices AvailableTop View of TO-220(RoHS Compliant)DApplicationsG High Efficiency Synchronous Rectification in SMPS. Uninterruptible Power Supply. Hard Switched and High Frequency Circ

SM1A25NSUBN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/10A, RDS(ON)= 162m(max.) @ VGS= 10V RDS(ON)= 180m(max.) @ VGS= 4.5VS 100% UIS + Rg TestedDG Reliable and RuggedTop View of TO-251 Lead Free and Green Devices Available (RoHS Compliant)D (2)ApplicationsG (1) Power Management in TV Inverter.S (3)N-Channel MOSFETOrdering and M

SM1A13NSK N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDD 100V/7A,D RDS(ON)= 51m (max.) @ VGS= 10V RDS(ON)= 57m (max.) @ VGS= 4.5VSS ESD protecedSG Reliable and RuggedTop View of SOP-8 Lead Free and Green Devices Available( 5,6,7,8 ) (RoHS Compliant)D D DDApplications(4) Power Management in DC/DC Converter.GS S S(1, 2, 3)N-C

SM1A06NSFP N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/40A,RDS(ON)= 17.5m (Max.) @ VGS=10V Reliable and RuggedSDG Lead Free and Green Devices Available(RoHS Compliant)Top View of TO-220FP 100% UIS + Rg TestedDApplicationsG High Efficiency Synchronous Rectification in SMPS. Uninterruptible Power Supply. Hard Switched

SM1A28NSUB N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/17A, RDS(ON)= 76m (Max.) @ VGS=10VS Reliable and RuggedDG Lead Free and Green Devices AvailableTop View of TO-251(RoHS Compliant) 100% UIS + Rg TestedDApplicationsG Application for Textile Machine.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM1A28NS

SM1501GSQH Dual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionS2 20V/0.55A ,G2 RDS(ON)= 800m (max.) @ VGS=4.5VD1D2G1RDS(ON)= 1100m (max.) @ VGS=2.5VS1RDS(ON)= 1450m (max.) @ VGS=1.8VTop View of SOT-563 Reliable and Rugged Lead Free and Green Devices Available(RoHS Compliant)(6)D1(3)D2 ESD Protection(2)(5)ApplicationsG1G2 Power Suppl

SM1A24NSKPN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/10A,DDDD RDS(ON)= 126m (max.) @ VGS= 10V RDS(ON)= 143m (max.) @ VGS= 4.5V Reliable and RuggedGS Pin 1SS Lead Free and Green Devices AvailableDFN5x6-8 (RoHS Compliant)( 5,6,7,8 )D D DD(4)ApplicationsG Power Management for Boost Converters. Synchronous Rectifiers for SMPS.

SM1110NSC N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/1.7A ,SDRDS(ON)=200m (max.) @ VGS=10VDG RDS(ON)=235m (max.) @ VGS=4.5VDD ESD ProtectedTop View of SOT-23-6 Reliable and Rugged Lead Free and Green Devices Available(1,2,5,6)(RoHS Compliant)DDDDApplications(3)G Power Management in TV Inverter. DC/DC Converter.(4)SN-Channel M

SM1F12NSKPN-Channel Enhancement Mode MOSFETFeatures Pin Description 150V/32A,DDDD RDS(ON)= 38m (max.) @ VGS= 10V Reliable and RuggedG Lead Free and Green Devices AvailableS Pin 1SS (RoHS Compliant)DFN5x6-8( 5,6,7,8 )D D DDApplications Power Management in TV Converter. (4)G DC-DC Converter.S S S(1, 2, 3)N-Channel MOSFETOrdering and Marking

SM1C01NSFHN-Channel Enhancement Mode MOSFETFeatures Pin Description 120V/120A, RDS(ON)= 8.4m (max.) @ VGS= 10V Reliable and Rugged Lead Free and Green Devices AvailableSD (RoHS Compliant)G Top View of TO-220HD (2)Applications Synchronous Rectification.G (1) Power Management in Inverter Systems. Motor Driver.S (3)N-Channel MOSFETOrdering and Marking In

SM1A30NSK N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDD 100V/5A, D RDS(ON)= 70m (Max.) @ VGS=10V RDS(ON)= 80m (Max.) @ VGS=4.5VSSS Reliable and RuggedG Lead Free and Green Devices Available Top View of SOP-8(RoHS Compliant)( 5,6,7,8 )D D DDApplications(4)G Power Management in DC/DC Converter. For LED Backlight DC-DC boost converter

SM1F04NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 150V/86A, RDS(ON)= 13.5m(max.) @ VGS= 10V Reliable and RuggedSD Lead Free and Green Devices Available G(RoHS Compliant)Top View of TO-220 100% UIS + Rg TestedDApplicationsG Synchronous Rectification. Montion Control Applications.SN-Channel MOSFETOrdering and Marking Informati

SM1A00NSW N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/180Aa, RDS(ON)= 4.2m (Max.) @ VGS=10V Reliable and RuggedSDG Lead Free and Green Devices Available(RoHS Compliant)Top View of TO-247 100% UIS + Rg TestedDApplicationsG Synchronous Rectification. Power Management in Inverter Systems. Motor Driver.S Uninterruptibl

SM1401PSS P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-2.8A, DRDS(ON)= 92m (Max.) @ VGS=-4.5VSRDS(ON)= 135m (Max.) @ VGS=-2.5VGRDS(ON)= 220m (Max.) @ VGS=-1.8VTop View of SC-70 Super High Dense Cell Design Reliable and RuggedD Lead Free and Green Devices Available(RoHS Compliant)GApplications Power Management in Notebook Computer,Portabl

SM1A08NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/40A,D RDS(ON)= 28m (Max.) @ VGS=10VS RDS(ON)= 31m (Max.) @ VGS=6VG Reliable and Rugged Lead Free and Green Devices Available Top View of TO-252-3 (RoHS Compliant)DApplicationsG LED Application System. Networking Application System.SN-Channel MOSFETOrdering and Marking Information

SM1A06NSF N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/60A,RDS(ON)= 17.5m (Max.) @ VGS=10V Reliable and RuggedSD Lead Free and Green Devices AvailableG(RoHS Compliant)Top View of TO-220DApplicationsG High Efficiency Synchronous Rectification in SMPS. Uninterruptible Power Supply. Hard Switched and High Frequency Circuits.SN-Channel M

SM1A64NHKPN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/43A,DDDD RDS(ON)= 13.5m (max.) @ VGS= 10V RDS(ON)= 18.2m (max.) @ VGS= 4.5V 100% UIS + Rg Tested GPin 1SSS Reliable and RuggedDFN5x6A-8_EP Lead Free and Green Devices Available(5,6,7,8) (RoHS Compliant)D D DDApplications(4) G Power Management for SMPS Charger adaptor SR.

SM1F02NSF N-Channel Enhancement Mode MOSFETFeatures Pin Description 150V/35A, RDS(ON)= 38m (max.) @ VGS= 10V 100% UIS + Rg TestedSD Reliable and RuggedG Lead Free and Green Devices AvailableTop View of TO-220 (RoHS Compliant)DApplicationsG Power Management in TV Converter. DC-DC Converter.SN-Channel MOSFETOrdering and Marking InformationPackage Code

SM1A63NHUBN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/73A, RDS(ON)= 9.6m (max.) @ VGS= 10V RDS(ON)= 12.4m (max.) @ VGS= 4.5VS 100% UIS + Rg TestedDG Reliable and RuggedTop View of TO-251 Lead Free and Green Devices Available (RoHS Compliant)D (2)ApplicationsG (1) Power Management for SMPS. DC-DC Converter.S (3)N-Channel MOSFETOrde

SM1A15NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/32A,RDS(ON)=44m (max.) @ VGS=10V Reliable and RuggedSD Lead Free and Green Devices AvailableG(RoHS Compliant)Top View of TO-220DApplicationsG Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM1A15NSF : TO-220Assembly Mate

SM1A22NSFP N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/4.2A,RDS(ON)= 340m (Max.) @ VGS=10VRDS(ON)= 385m (Max.) @ VGS=4.5VS 100% UIS + Rg TestedDG Reliable and RuggedTop View of TO-220FP Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in DC/DC Converter.SN-Channel MOSFETOrdering and Marking Inform

SM1F04NSGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 150V/86A, RDS(ON)= 13.5m (max.) @ VGS= 10VS Reliable and Rugged G Lead Free and Green Devices Available Top View of TO-263-3(RoHS Compliant)DApplicationsG Synchronous Rectification. Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM1F0

SM1F15NSV N-Channel Enhancement Mode MOSFETFeatures Pin Description 150V/2.6A,RDS(ON)= 210m (max.) @ VGS=10VGRDS(ON)= 235m (max.) @ VGS=4.5VDS 100% UIS + Rg Tested Reliable and RuggedTop View SOT-223 Lead Free and Green Devices Available(RoHS Compliant)DApplicationsG Transformer Driving Switch DC-DC Converters Primary Switch Load SwitchSN-Channel MO

SM1110NSA N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/1.7A ,DRDS(ON)=200m (max.) @ VGS=10VS RDS(ON)=235m (max.) @ VGS=4.5VG ESD Protected Reliable and RuggedTop View of SOT-23-3 Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in TV Inveter.SN-Channel MOSFETOrdering and Marking InformationSM1110NS

SM1A02NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/130A, RDS(ON)= 7.2m (max.) @ VGS= 10V Reliable and RuggedSD Lead Free and Green Devices Available G(RoHS Compliant)Top View of TO-220DApplicationsG Synchronous Rectification Power Management in Inverter Systems Motor DriverSN-Channel MOSFETOrdering and Marking InformationPackage C

SM1620CSCS Dual Enhancement Mode MOSFET (N- and P-Channel)Features Pin Description N-Channel 20V/0.91A,S2 RDS(ON)= 240m (max.) @ VGS=4.5VG2D2 RDS(ON)= 320m (max.) @ VGS=2.5VD1G1S1 P-Channel-12V/-0.86A,Top View of SOT-363RDS(ON)= 290m (max.) @ VGS=-4.5VRDS(ON)= 400m (max.) @ VGS=-2.5V(3)D2(6)D1RDS(ON)= 530m (max.) @ VGS=-1.8V Reliable and Rugged Lead

SM1A24NSKN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 100V/4A,DD RDS(ON)= 120m (max.) @ VGS= 10V RDS(ON)= 135m (max.) @ VGS= 4.5VS Reliable and RuggedSSG Lead Free and Green Devices AvailableTop View of SOP-8 (RoHS Compliant)( 5,6,7,8 )D D D D(4)ApplicationsG Power Management in DC/DC Converter.S S S(1, 2, 3)N-Channel MOSFET

SM1A42CSKDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N ChannelD1D1D2100V/2.5A,D2RDS(ON) = 150m (max.) @ VGS = 10VRDS(ON) = 170m (max.) @ VGS = 4.5VS1G1 P Channel S2G2-100V/-2.2A,Top View of SOP-8RDS(ON) = 205m (max.) @ VGS =-10V(8) (7) (6) (5)RDS(ON) = 240m (max.) @ VGS =-4.5VD1 D1 D2 D2 100% UIS + Rg Tested

SM1A06NSU N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDrain 4 100V/60A,RDS(ON)=17m (Max.) @ VGS=10V3 Source2 Reliable and Rugged1 Gate Lead Free and Green Devices Available(RoHS Compliant)Top View of TO-252DApplicationsG Power Management in TV Converter. DC-DC Converter.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM1A

SM1C01NSFPN-Channel Enhancement Mode MOSFETFeatures Pin Description 120V/80A, RDS(ON)= 8.4m(max.) @ VGS= 10V Reliable and RuggedS Lead Free and Green Devices AvailableDG (RoHS Compliant)Top View of TO-220FP 100% UIS + Rg TestedD (2)Applications Synchronous Rectification.G (1) Power Management in Inverter Systems. Motor Driver.S (3)N-Channe

SM1108NSF/SM1108NSFP N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/120A,RDS(ON)=7.4m (max.) @ VGS=10V Reliable and Rugged S SD DG G Lead Free and Green Devices AvailableTop View of TO-220 Top View of TO-220-FP(RoHS Compliant)DApplicationsG Synchronous Rectification. Power Management in Inverter Systems.SN-Channel MOSFETOrdering and

APM1105NUN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 100V/16A,RDS(ON)= 100m (max.) @ VGS=10VSRDS(ON)= 170m (max.) @ VGS=4.5VG ESD ProtectedTop View of TO-252-3 Reliable and RuggedD Lead Free and Green Devices Available(RoHS Compliant)GApplications Power Management in TV Inverter.SN-Channel MOSFETOrdering and Marking Information

SM1C01NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 120V/120A, RDS(ON)= 8.4m (max.) @ VGS= 10V Reliable and RuggedSD Lead Free and Green Devices Available G(RoHS Compliant)Top View of TO-220DApplicationsG Synchronous Rectification Power Management in Inverter Systems Motor DriverSN-Channel MOSFETOrdering and Marking InformationPackage C

SM1301NSSA N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/0.8A,D RDS(ON)= 0.8 (max.) @ VGS=10V RDS(ON)= 1.1 (max.) @ VGS=4.5VS RDS(ON)= 2.1 (max.) @ VGS=2.5VG Reliable and RuggedTop View of SOT-523 Lead Free and Green Devices Available(RoHS Compliant)D ESD ProtectionGApplications High Speed and Analog Switching ApplicationsS Low voltage d

SM1F13NSK N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDD 150V/4.5A,D RDS(ON)= 69m (max.) @ VGS=10V RDS(ON)= 78m (max.) @ VGS=4.5VSSS 100% UIS + Rg TestedG Reliable and RuggedTop View of SOP-8 Lead Free and Green Devices Available( 5,6,7,8 )(RoHS Compliant)D D D DApplications(4)G DC-DC converter switching for Networkong General

SM1A11NSK N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDD 100V/6A, D RDS(ON)= 45m (Max.) @ VGS=10VS Reliable and RuggedSS Lead Free and Green Devices AvailableGTop View of SOP-8(RoHS Compliant)( 5,6,7,8 )D D D DApplications(4)G Power Management for Boost Converters. Synchronous Rectifiers for SMPS. LED Backlighting.S S S(1, 2, 3

SM1A23NSKN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 100V/4.2A,DD RDS(ON)= 100m (max.) @ VGS= 10V RDS(ON)= 110m (max.) @ VGS= 4.5VS Reliable and RuggedSSG Lead Free and Green Devices AvailableTop View of SOP-8 (RoHS Compliant)( 5,6,7,8 )D D D D(4)ApplicationsG Power Management in DC/DC Converter.S S S(1, 2, 3)N-Channel MOSF

SM1A07NSF N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/118A, RDS(ON)= 6.4m (Max.) @ VGS=10V Reliable and RuggedSD Lead Free and Green Devices AvailableG(RoHS Compliant)Top View of TO-220DApplicationsG Synchronous Rectification. Power Management in Inverter Systems. Motor Driver.SN-Channel MOSFETOrdering and Marking

SM1105NSK N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDDD 100V/3.5A, RDS(ON)= 105m (max.) @ VGS= 10V RDS(ON)= 175m (max.) @ VGS= 4.5V SSS ESD protecedG Reliable and RuggedTop View of SOP-8 Lead Free and Green Devices Available( 5,6,7,8 ) (RoHS Compliant)D D D DApplications Power Management in TV Inverter. (4)GS S S(1, 2, 3)N-Chan

SM1A23NSDN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/4.2A, RDS(ON)= 100m (max.) @ VGS= 10V SD RDS(ON)= 110m (max.) @ VGS= 4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View SOT-89 (RoHS Compliant)D (2)ApplicationsG (1) Power Management in DC/DC Converter. Load Switching.S (3)N-Channel MOSFETOrdering and Marking Inform

SM1A63NHUCN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/73A, RDS(ON)= 9.6m (max.) @ VGS= 10V RDS(ON)= 12.4m (max.) @ VGS= 4.5V 100% UIS + Rg Tested Reliable and Rugged Lead Free and Green Devices Available Top View of TO-251S (RoHS Compliant)D (2)ApplicationsG (1) Power Management for SMPS. DC-DC Converter.S (3)N-Channel MOSFETOrdering and

SM1F08NSFP N-Channel Enhancement Mode MOSFETFeatures Pin Description 150V/12A, RDS(ON)= 110m(max.) @ VGS= 10V Reliable and RuggedSD Lead Free and Green Devices AvailableG (RoHS Compliant)Top View of TO-220FP 100% UIS + Rg TestedDApplicationsG DC-DC Converter Switching for Networkong. General Purpose Switching.SN-Channel MOSFETOrdering and Marking I

SM1A33PSUP-Channel Enhancement Mode MOSFETFeatures Pin Description -100V/-38A,Drain 4 RDS(ON)= 39m(max.) @ VGS=-10V3 Source RDS(ON)= 49m(max.) @ VGS=-4.5V2 100% UIS+Rg Tested1 Gate Reliable and RuggedTop View of TO-252-2 Lead Free and Green Devices Available(RoHS Compliant)DApplicationsG Power Management for Industrial DC / DC Converters.SP

SM1A11NSV N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/6A, RDS(ON)= 45m (Max.) @ VGS=10VG Reliable and RuggedDS Lead Free and Green Devices Available(RoHS Compliant)Top View SOT-223DApplicationsG Power Management for Boost Converters. Synchronous Rectifiers for SMPS.S LED Backlighting.N-Channel MOSFETOrdering and Marking Information

SM1A23NSFPN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/13A, RDS(ON)= 100m(max.) @ VGS= 10V RDS(ON)= 110m(max.) @ VGS= 4.5VS Reliable and RuggedDG Lead Free and Green Devices Available (RoHS Compliant)Top View of TO-220FP ESD ProtectionD 100% UIS + Rg TestedGApplications Power Management in DC/DC Converter.SN-Channel MOSFETOrd

SM1A25NSKN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 100V/3.3A,DD RDS(ON)= 162m (max.) @ VGS= 10V RDS(ON)= 180m (max.) @ VGS= 4.5VS ESD ProtectionSSG Reliable and RuggedTop View of SOP-8 Lead Free and Green Devices Available( 5,6,7,8 ) (RoHS Compliant)D D D D(4)ApplicationsG Power Management in TV Inverter.S S S(1, 2, 3)N

SM1A15NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/30A, RDS(ON)= 44m(max.) @ VGS= 10V RDS(ON)= 57m(max.) @ VGS= 4.5V Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-3 (RoHS Compliant)DGApplications Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM1A1

SM1A24NSUN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/12A,D RDS(ON)= 120m (max.) @ VGS= 10VS RDS(ON)= 135m (max.) @ VGS= 4.5V Reliable and RuggedG Lead Free and Green Devices Available (RoHS Compliant) Top View of TO-252D (2)ApplicationsG (1) Power Management in DC/DC Converter.S (3)N-Channel MOSFETOrdering and Marking InformationPacka

SM1F12NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 150V/35A, D RDS(ON)= 38m(max.) @ VGS= 10VS 100% UIS + Rg TestedG Reliable and RuggedTop View of TO-252-2 Lead Free and Green Devices Available (RoHS Compliant)DApplicationsG Power Management in TV Converter. DC-DC Converter.SN-Channel MOSFETOrdering and Marking InformationPackage C

SM1A63NHKPN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/62A,DDDD RDS(ON)= 9m (max.) @ VGS= 10V RDS(ON)= 11.7m (max.) @ VGS= 4.5V 100% UIS + Rg Tested GPin 1SSS Reliable and RuggedDFN5x6A-8_EP Lead Free and Green Devices Available(5,6,7,8) (RoHS Compliant)D D DDApplications(4) G Power Management for SMPS. DC-DC Converter.S S

SM1F14NSUN-Channel Enhancement Mode MOSFETFeatures Pin Description 150V/20A,Drain 4 RDS(ON)= 70m(max.) @ VGS= 10V3 Source Reliable and Rugged2 Lead Free and Green Devices Available1 Gate (RoHS Compliant)Top View of TO-252-3DApplicationsG Power Management in TV Converter. DC-DC Converter.SN-Channel MOSFETOrdering and Marking InformationPackage Cod

SM1A20NSVN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/8A, RDS(ON)= 29m(max.) @ VGS= 10VG RDS(ON)= 33m(max.) @ VGS= 4.5VDS Reliable and Rugged Lead Free and Green Devices AvailableTop View SOT-223 (RoHS Compliant)DApplicationsG Power Management in DC/DC Converter.SN-Channel MOSFETOrdering and Marking InformationPackage Code

SM1A21NSKN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 100V/7A, DD RDS(ON)= 18m (max.) @ VGS= 10V RDS(ON)= 21.5m (max.) @ VGS= 4.5VSS 100% UIS + Rg TestedSG Reliable and RuggedTop View of SOP-8 Lead Free and Green Devices Available(5,6,7,8) (RoHS Compliant)DDDDApplications(4) G DC-DC Converter. Motor Control.S S S( 1, 2, 3 )N

SM1660DSCS Dual N-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/0.26A, RDS(ON)= 2.2 (max.) @ VGS=10V S2G2D2 RDS(ON)= 2.6 (max.) @ VGS=4.5VD1G1 Reliable and RuggedS1 Lead Free and Green Devices AvailableTop View of SOT-363(RoHS Compliant)(6)D1(3)D2 ESD Protection : HBM=(+/-)1600V MM=(+/-)100V(2)(5)ApplicationsG1G2 Load switch. Hig

CSM150 N PD TC=25 150 W 1.2 W/ ID VGS=10V,TC=25 34 A ID VGS=10V,TC=100 21 A IDM 136 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.83 /W RthJA 48 /W BVDSS VGS=0V,ID=1.0mA 100 V VGS=10V,ID=21A 0

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SMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Typ

DCC030M120G2 68A 1200V N-channel SiC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. 2 Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency 3 Applic

DCCF016M120G31200V/16m/110A SiC MOSFETFeatures Key ParametersVDS Higher System Efficiency 1200VRDS(on)typ Reduced Cooling Requirements 16mID 175 operating temperature 110A Increased Power Density Vth 2.5V Increased System Switching FrequencyApplications Solar and UPS inverters Power Supplies High Voltage DC/DC Converters Switch Mod

DCC016M120G2/DCCF016M120G2 120A 1200V N-channel SiC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. 2 Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequ

DCC075M120G2C 40A 1200V N-channel SiC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. 2 Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency 3 Appli

DCC080M120A/ DCCF080M120A2 36A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. 2 Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Freque

DCC016M120G31200V/16m/110A SiC MOSFETFeatures Key ParametersVDS Higher System Efficiency 1200VRDS(on)typ Reduced Cooling Requirements 16mID 175 operating temperature 110A Increased Power Density Vth 2.5V Increased System Switching FrequencyApplications Solar and UPS inverters Power Supplies High Voltage DC/DC Converters Switch Mode

DCC160M120G1DCCF160M120G1 18A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. 2 Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Freq

DIP Type TransistorsNPN TransistorsNJM13003-1.63TO-126Unit:mm8.00 0.30 3.25 0.20 Features High voltage capability3.20 0.10 High speed switching Wide SOA(1.00) (0.50)0.75 0.10 ROHS compliant1.75 0.201.60 0.100.75 0.10#1+0.102.28TYP 2.28TYP 0.50 0.05[2.280.20] [2.280.20]1. Base2. Collector3. Emitter Absol

SGT70N65FDM1P7 70A650V C2SGT70N65FDM1P7 Field Stop1 UPS,SMPSG PFC 3E 70A650VVCE(sat)( )=2.3V@IC=70A

SGT75T65SDM1P7 75A650V C2SGT75T65SDM1P7 1Field Stop IIIG UPSSMPS PFC 3E 75A650VVCE(sat)( )=1.65V@IC=75A

SGT30T60SDM1P7 30A600V C2SGT30T60SDM1P7 Field Stop III 1G UPSSMPS PFC 3E 30A600VVCE sat=1.65V@IC=30

SGT10T60SDM1P7 10A600V C2SGT10T60SDM1P7 1Field StopIIIG UPSSMPS 3E 10A600VVCE(sat)()=1.65V@I

SGM100HF12A1TFDT4 100A1200V IGBT SGM100HF12A1TFDT4 100A1200VVCE(sat)( ) =2.1V@IC=100A VCE(sat) A1 DBC

SGM100HF12A3TFD 100A1200V IGBT 0B SGM100HF12A3TFD 1B 100A1200VVCE(sat)( ) =2.1V@IC=100A VCE(sat) A3 DBC

SGT75T65SDM1P4 75A650V C1SGT75T65SDM1P4 4Field Stop IIIG UPSSMPS PFC 3 2E 75A650VVCE(sat)( )=1.65V@IC=75A

SGT20T60SDM1P7 20600V C2SGT20T60SDM1P7 Field Stop1G UPSSMPS PFC 3E 20A600VVCE(sat)( )=1.7V@IC=20A

SGT50T65SDM1P7 50A650V C2SGT50T65SDM1P7 1Field Stop IIIG UPSSMPS PFC 3E 50A650VVCE(sat)( )=1.65V@IC=50A

SGM100HF12A1TFD 100A, 1200V IGBT 0B SGM100HF12A1TFD 1B 100A1200VVCE(sat)( ) =2.1V@IC=100A VCE(sat) A1 DBC

SGT10T60SDM1D 10A600V C2SGT10T60SDM1D Field StopIII 1G UPSSMPS 3E 10A600VVCE(sat)()=1.65V@IC=1

SGM150HF12A3TFD 150A, 1200V IGBT SGM150HF12A3TFD 20KHz 150A1200VVCE(sat)( ) =2.2V@IC=150A VCE(sat)

Green Product BLM14N08L 80V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM14N08L uses advanced trench technology to provide V = 80V,I = 60A DS Dexcellent R , low gate charge. It can be used in a wide R

BLM10P03Power MOSFET1. DescriptionAdvantagesBLM10P03 uses advanced trench technologyand design to provide excellent R with lowDS(ON)gate charge. It can be used in a wide variety ofapplications.Key CharacteristicsParameter Value UnitV -30 VDSI -52 AD(TO-252)R 7 mDS(ON)@10V.TypR 10 mDS(ON)@4.5V.TypPin1FeaturesTO-252 Top View SOP-8 Top V

Pb Free ProductBLM138KN-Channel Enhancement Mode Power MOSFET GENERAL FEATURES VDS = 50V,ID = 0.22A RDS(ON)

Pb Free Product BLM12P03 P-Channel Enhancement Mode Power MOSFET DDESCRIPTION GThe BLM12P03 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)Svoltages as low as 4.5V. Schematic diagram GENERAL FEATURES V = -30V,I = -20A DS DR

Green Product BLQM15N06L 60V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLQM15N06L uses advanced trench technology to V = 60V,I = DS D 50A R

Green Product BLM12N08 80V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM12N08 uses advanced trench technology to provide V = 80V,I = 70A DS Dexcellent R , low gate charge. It can be used in a wide R

Green Product BLM16N10 100V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM16N10 uses advanced trench technology to provide V = 100V,I = 60A DS Dexcellent R , low gate charge. It can be used in a wide R

CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNT CHM1503YJGPDual Enhancement Mode Field Effect TransistorN-channel Q1: VOLTAGE 30 Volts CURRENT 8 AmpereN-channel Q2: VOLTAGE 30 Volts CURRENT 9 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely

CHENMKO ENTERPRISE CO.,LTDCHM1012LPAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 120 Volts CURRENT 10 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High powe

CHENMKO ENTERPRISE CO.,LTDCHM13N07PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 70 Volts CURRENT 11 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power

CHENMKO ENTERPRISE CO.,LTDCHM1423WGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 2.8 AmpereAPPLICATION* Power Management in Note book * Portable Equipment* Battery Powered System* DC/DC Converter SC-70/SOT-323* Load Switch* DSC* LCD Display inverter FEATURE 0.651.30.12.00.20.65* Small surface mounting type. (SC-7

CHENMKO ENTERPRISE CO.,LTDCHM1710PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 100 Volts CURRENT 17 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power

CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNT CHM11C2JGPDual Enhancement Mode Field Effect TransistorN-channel: VOLTAGE 30 Volts CURRENT 7 AmpereP-channel: VOLTAGE 20 Volts CURRENT 4.3 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low R

CHENMKO ENTERPRISE CO.,LTDCHM10N4NGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 450 Volts CURRENT 10 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small flat package. (D2PAK)0.420(10.67)0.190(4.83)* High density cell design for extremely low RDS(ON). 0.380(9.69)0.160(4

CHENMKO ENTERPRISE CO.,LTDCHM1592XGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 500 mAmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-62/SOT-89FEATURE* Small surface mounting type. (SC-62/SOT-89)* High density cell design for extremely low RDS(ON). 4.6MAX. 1.6MAX.* Rugg

CHENMKO ENTERPRISE CO.,LTDCHM1203EVJGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 12 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. ( SO-8 )* Super high density cell design for extremely low RDS(ON). ( )4.06 0.160( )3.70 0.146* High p

CHENMKO ENTERPRISE CO.,LTDCHM1413WGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 2.9 AmpereAPPLICATION* Power Management in Note book * Portable Equipment* Battery Powered System* DC/DC ConverterSC-70/SOT-323* Load Switch* DSC* LCD Display inverter FEATURE0.651.30.12.00.2* Small surface mounting type. (SC-70/S

CHENMKO ENTERPRISE CO.,LTDCHM1012PA SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 120 Volts CURRENT 10 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power

CHENMKO ENTERPRISE CO.,LTDCHM1024VGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 700 mAmpereAPPLICATION* Power Management in Note book * Battery Powered System * DC/DC Converter * LCD Display inverter SOT-563FEATURE* Small surface mounting type. (SOT-563)* Low-Voltage Operation (1)(5)* High-Speed Circuits 0.500.9~1

CHENMKO ENTERPRISE CO.,LTDCHM1592GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 500 mAmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59)* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High sat

CHENMKO ENTERPRISE CO.,LTDCHM1012TGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 0.65 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-75/SOT-416FEATURE* Small surface mounting type. (SC-75/SOT-416)* High density cell design for low RDS(ON). * Suitable for high packing den

CHENMKO ENTERPRISE CO.,LTDCHM12N10PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 100 Volts CURRENT 11 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High powe

CHENMKO ENTERPRISE CO.,LTDCHM1702XGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 500 mAmpereFEATURE* Small surface mounting type. (SC-62/SOT-89)* High density cell design for extremely low RDS(ON). SC-62/SOT-89* Rugged and reliable.* High saturation current capability.CONSTRUCTION4.6MAX. 1.6MAX.* N-Channel Enhancement1.7MA

CHENMKO ENTERPRISE CO.,LTDCHM1433WGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 2.8 AmpereAPPLICATION* Power Management in Note book * Portable Equipment* Battery Powered System* DC/DC ConverterSC-70/SOT-323* Load Switch* DSC* LCD Display inverter FEATURE0.651.30.12.00.2* Small surface mounting type. (SC-70/S

CHENMKO ENTERPRISE CO.,LTDCHM1304WGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 2.0 AmpereAPPLICATION* Power Management in Note book * Portable Equipment* Battery Powered System* DC/DC Converter SC-70/SOT-323* Load Switch* DSC* LCD Display inverter FEATURE 0.651.30.12.00.20.65* Small surface mounting type. (SC-7

CHENMKO ENTERPRISE CO.,LTDCHM1273XGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 2 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-62/SOT-89FEATURE* Small surface mounting type. (SC-62/SOT-89)* High density cell design for extremely low RDS(ON). 4.6MAX. 1.6MAX.* Rugged

CHENMKO ENTERPRISE CO.,LTDCHM1305WGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 1 AmpereAPPLICATION* Power Management in Note book * Portable Equipment* Battery Powered System* DC/DC ConverterSC-70/SOT-323* Load Switch* DSC* LCD Display inverter FEATURE0.651.30.12.00.2* Small surface mounting type. (SC-70/SOT

CHENMKO ENTERPRISE CO.,LTDCHM1023VGPSURFACE MOUNT Dual P-Channel Enhancement Mode Field Effect TransistorVOLTAGE 20 Volts CURRENT 0.5 AmpereFEATURE* Small surface mounting type. (SOT-563)* High density cell design for low RDS(ON).* Suitable for high packing density.SOT-563(1)(5)CONSTRUCTION0.50* P-Channel Enhancement0.9~1.1 1.5~1.70.50(4)(3)0.15~0.31.1~1.

CHENMKO ENTERPRISE CO.,LTDCHM1443WGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 2.8 AmpereAPPLICATION* Power Management in Note book * Portable Equipment* Battery Powered System* DC/DC Converter SC-70/SOT-323* Load Switch* DSC* LCD Display inverter FEATURE 0.651.30.12.00.20.65* Small surface mounting type. (SC-7

CHENMKO ENTERPRISE CO.,LTDCHM1825NGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 250 Volts CURRENT 18 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small package. (D2PAK)0.420(10.67)0.190(4.83)* Super high dense cell design for extremely low RDS(ON). 0.380(9.69)0.160(4.

CHENMKO ENTERPRISE CO.,LTDCHM1273GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 2 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small surface mounting type. (SC-59)* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* Hi

CHENMKO ENTERPRISE CO.,LTDCHM12P10N SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 100 Volts CURRENT 11 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small flat package. (D2PAK )0.420(10.67)0.190(4.83)* High density cell design for extremely low RDS(ON). 0.380(9.69)0.160

CHENMKO ENTERPRISE CO.,LTDCHM1013TGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 0.45 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-75/SOT-416FEATURE* Small surface mounting type. (SC-75/SOT-416)* High density cell design for low RDS(ON). * Suitable for high packing den

CTM18N20Crownpo TechnologyPower MOSFETGeneral DescriptionFeatures.This Power MOSFET is designed for low voltage, highSilicon Gate for Fast Switching Speeds.speed power switching applications such as switchingLow R to Minimize On-Losses. Specified at ElevatedDS(on)regulators, converters, solenoid and relay drivers.Temperature.Rugged SOA is Power Dissipation Limi

CTM14N50Crownpo TechnologyPower MOSFETGeneral DescriptionFeatures.This high voltage MOSFET uses an advanced terminationRobust High Voltage Termination. scheme to provide enhanced voltage-blocking capabilityAvalanche Energy Specified.without degrading performance over time. In addition, thisSource-to-Drain Diode Recovery Time Comparableadvanced MOSFET is designed to wit

Discontinuance (Aug. 31, 2013) DM1GL75SH12A July. 2010 High Power SPT+ & Rugged Type IGBT Module Description Equivalent Circuit and Package DAWINS IGBT 7DM-1 Package devices are optimized to reduce losses and Equivalent Circuit switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives

D WTMD WTMDAWIN ElectronicsDAWIN Electronics DL2M100N5Apr. 2008500V DUAL N-Channel MOSFETDescriptionEquivalent Circuit and Package DAWINS Dual power MOSFET devices are designed for switching applications of high voltage and current. (You have to connect external Equivalent Circuit fast recovery diode reverse connected across each MOSFET)The mounting base of the module

DIM1600FSM12-A000 Single Switch IGBT Module Replaces DS5533-3.1 DS5533-4 October 2010 (LN27611) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 1600A Non Punch Through Silicon IC(PK) (max) 3200A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the

DIM1000NSM33-TS000 Single Switch IGBT Module Replaces DS6093-1 DS6093-2 October 2013 (LN31017) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 1000A High Current Density Enhanced DMOS SPT IC(PK) (max) 2000A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary

DIM1000ECM33-TL000 IGBT Chopper Module Replaces DS6105-1 DS6105-2 March 2014 (LN31424) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10s Short Circuit Withstand IC (max) 1000A High Thermal Cycling Capability IC(PK) (max) 2000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlS

DIM800FSM12-A000 Single Switch IGBT Module Replaces DS5531-3.1 DS5531-4 November 2010 (LN27682) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 800A Non Punch Through Silicon IC(PK) (max) 1600A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the

DIM1800ESS12-A000 Single Switch IGBT Module Replaces DS5857-1.1 DS5857-2 October 2010 (LN27614) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V Non Punch Through Silicon IC (max) 1800A Isolated Cu Base with Al2O3 Substrates IC(PK) (max) 3600A Lead Free construction * Measured at the power busbars, not the auxiliary

DIM1000NSM33-TL000 Single Switch IGBT Module DS6109-1 June 2013 (LN30637) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10s Short Circuit Withstand IC (max) 1000A High Thermal Cycling Capability IC(PK) (max) 2000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base with

Data DIM1200ASM45-TS000 Single Switch IGBT Module Replaces DS6102-1 DS6102-2 October 2013 (LN31073) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 4500V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 1200A High Current Density Enhanced DMOS SPT IC(PK) (max) 2400A Isolated AlSiC Base With AlN Substrates * Measured at the aux

DIM1200FSM17-A000 Single Switch IGBT Module Replaces DS5456-3.5 DS5456-4 November 2010 (LN27718) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1700V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 1200A Non Punch Through Silicon IC(PK) (max) 2400A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not th

DIM1000ECM33-TS000 IGBT Chopper Module Replaces DS6091-1 DS6091-2 March 2014 (LN31425) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 1000A High Current Density Enhanced DMOS SPT IC(PK) (max) 2000A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminal

DIM1200ESM33-F000 Single Switch IGBT Module Replaces DS5831-2 DS5831-3 May 2011 (LN28347) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.8V High Thermal Cycling Capability IC (max) 1200A Soft Punch Through Silicon IC(PK) (max) 2400A Isolated AlSiC Base With AlN Substrates * Measured at the auxiliary terminals L

DIM600DCM17-A000 IGBT Chopper Module Replaces DS5491-4.2 DS5491-5 March 2011 (LN26753) FEATURES KEY PARAMETERS 0.5286 x O70.216 10s Short Circuit Withstand VCES 1700V VCE(sat) * (typ) 2.7V 0.2 High Thermal Cycling Capability screwing depth40IC (max) 600A max 8 Non Punch Through Silicon 0.253IC(PK) (max) 1200A Isolated AlSiC Base Wi

Data DIM1200ASM45-TS001 Single Switch IGBT Module Replaces DS6107-1 DS6107-2 October 2013 (LN31065) FEATURES KEY PARAMETERS 10.2kV Isolation VCES 4500V VCE(sat) * (typ) 2.7V 10s Short Circuit Withstand IC (max) 1200A High Thermal Cycling Capability IC(PK) (max) 2400A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals

Preliminary Information DIM1600ECM17-A000 IGBT Chopper Module DS6069-1 September 2011 (LN28672) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1700V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 1600A Soft Punch Through Silicon IC(PK) (max) 3200A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminal

DIM400PHM17-A000 IGBT Half Bridge Module Replaces DS5561-1.3 DS5561.2 January 2014 (LN31262) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VDRM 1700V VT* (typ) 4.9V High Thermal Cycling Capability IC (max) 400A Non Punch Through Silicon IC(PK) (max) 800A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the auxiliary

DIM1200FSS12-A000 Single Switch IGBT Module Replaces DS5834-1.2 DS5834-2 October 2010 (LN27661) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V Non Punch Through Silicon IC (max) 1200A Isolated Cu Base with Al2O3 Substrates IC(PK) (max) 2400A Lead Free construction * Measured at the power busbars, not the auxiliary

DIM1800ESM12-A000 Single Switch IGBT Module Replaces DS5529-3 DS5529-4 October 2010 (LN27613) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 1800A Non Punch Through Silicon IC(PK) (max) 3600A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the a

DIM1500ASM33-TL001 Single Switch IGBT Module DS6103-1 June 2013 (LN30625) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10.2kV Isolation IC (max) 1500A 10s Short Circuit Withstand IC(PK) (max) 3000A High Thermal Cycling Capability * Measured at the auxiliary terminals High Current Density Enhanced DMOS SPT I

DIM400DCM17-A000 IGBT Chopper Module Replaces DS5490-4 DS5490-5 March 2011 (LN28169) KEY PARAMETERS 0.528FEATURES 6 x O70.216VCES 1700V 10s Short Circuit Withstand VCE(sat) * (typ) 2.7V screwing depth0.240IC (max) 400A High Thermal Cycling Capability max 8IC(PK) (max) 800A 0.253 Non Punch Through Silicon * Measured at the power

DIM400DDM12-A000 Dual Switch IGBT Module Replaces DS5532-3.1 DS5532-4 November 2009 (LN26754) FEATURES KEY PARAMETERS 280.56 x O70.2 10s Short Circuit Withstand 16 0.218VCES 1200V VCE(sat) * (typ) 2.2 V High Thermal Cycling Capability screwing depth0.2 0.240 44IC (max) 400A max 8 Non Punch Through Silicon 0.2 0.253 57IC(PK) (max) 800A

DIM1000XSM33-TL001 Single Switch IGBT Module DS6104-1 June 2013 (LN30632) FEATURES KEY PARAMETERS 10.2kV Isolation VCES 3300V VCE(sat) * (typ) 2.0V Low VCE(sat) Device IC (max) 1000A 10s Short Circuit Withstand IC(PK) (max) 2000A High Thermal Cycling Capability * Measured at the auxiliary terminals High Current Density Enhanced DMOS SPT I

DIM1500ASM33-TS001 Single Switch IGBT Module DS6095-1 April 2013 (LN30405) FEATURES KEY PARAMETERS 10.2kV Isolation VCES 3300V VCE(sat) * (typ) 2.2V 10s Short Circuit Withstand IC (max) 1500A High Thermal Cycling Capability IC(PK) (max) 3000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base With A

DIM1500ESM33-TS000 Single Switch IGBT Module Replaces DS6072-3 DS6072-4 April 2013 (LN30425) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 1500A Soft Punch Through Silicon IC(PK) (max) 3000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals

DIM800DCM12-A000DIM800DCM12-A000IGBT Chopper ModuleReplaces July 2002 version DS5548-2.0 DS5548-FEATURES KEY PARAMETERSVCES 1200V 10s Short Circuit WithstandVCE(sat)* (typ) 2.2V High Thermal Cycling CapabilityIC (max) 800AIC(PK) (max) 1600A Non Punch Through Silicon*(measured at the power busbars and not the auxiliary terminals) Isolated MMC Base with AlN Substrates

DIM800FSM17-A000 Single Switch IGBT Module Replaces DS5461-3.2 DS5461-4 November 2010 (LN27717) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1700V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 800A Non Punch Through Silicon IC(PK) (max) 1600A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the

DIM800DDM12-A000 Dual Switch IGBT Module Replaces DS5528-3.0 DS5528-4 October 2009 (LN26748) FEATURES KEY PARAMETERS 280.56 x O70.2 10s Short Circuit Withstand 16 0.218VCES 1200V VCE(sat) * (typ) 2.2 V High Thermal Cycling Capability screwing depth0.2 0.240 44IC (max) 800A max 8 Non Punch Through Silicon 0.2 0.253 57IC(PK) (

DIM2400ESM17-A000 Single Switch IGBT Module Replaces DS54447-5 DS5447-6 June 2012 (LN29603) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1700V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 2400A Non Punch Through Silicon IC(PK) (max) 4800A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the aux

DIM1600FSS12-A000 Single Switch IGBT Module Replaces DS5541-2.4 DS5541-3 October 2010 (LN27660) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V Non Punch Through Silicon IC (max) 1600A Isolated Cu Base with Al2O3 Substrates IC(PK) (max) 3200A Lead Free construction * Measured at the power busbars, not the auxiliary

DIM1500ESM33-TL000 Single Switch IGBT Module DS6112-1 June 2013 (LN30640) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat)* (typ) 2.0V 10s Short Circuit Withstand IC (max) 1500A High Thermal Cycling Capability IC(PK) (max) 3000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base With

DIM1200FSM12-A000 Single Switch IGBT Module Replaces DS5547-3.1 DS5547-4 October 2010 (LN27662) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 1200A Non Punch Through Silicon IC(PK) (max) 2400A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the

DIM2400ESM12-A000 Single Switch IGBT Module Replaces DS5536-3.0 DS5536-4 October 2010 (LN27615) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 2400A Non Punch Through Silicon IC(PK) (max) 4800A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the

DIM1000XSM33-TS001 Single Switch IGBT Module DS6126-1 October 2013 (LN31016) FEATURES KEY PARAMETERS 10.2kV Isolation VCES 3300V VCE(sat) * (typ) 2.2V 10s Short Circuit Withstand IC (max) 1000A High Thermal Cycling Capability IC(PK) (max) 2000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base With

DIM600DDM17-A000 Dual Switch IGBT Module Replaces DS5596-2 DS5596-3 December 2013 (LN31169) FEATURES KEY PARAMETERS 280.56 x O70.2 10s Short Circuit Withstand 16 0.218VCES 1700V VCE(sat) * (typ) 2.7 V High Thermal Cycling Capability screwing depth0.2 0.240 44IC (max) 600A max 8 Non Punch Through Silicon 0.2 0.253 57 IC(PK) (ma

DIM800DCM17-A000 IGBT Chopper Module Replaces DS5444-4.2 DS5444-5 April 2011 (LN26752) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1700V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 800A Non Punch Through Silicon IC(PK) (max) 1600A Isolated AlSiC Base With AlN Substrates * Measured at the power busbars, not the auxiliary

DIM400DDM17-A000 Dual Switch IGBT Module Replaces DS5549-4.1 June 2002 DS5549-5 June 2009 (LN26749) FEATURES KEY PARAMETERS 280.56 x O70.2 10s Short Circuit Withstand 16 0.218VCES 1700V VCE(sat) * (typ) 2.7 V High Thermal Cycling Capability screwing depth0.2 0.240 44IC (max) 400A max 8 Non Punch Through Silicon 0.2 0.253 57I

DIM800DDM17-A000 Dual Switch IGBT Module Replaces DS5433-4.1 July 2002 DS5433-5 June 2009 (LN26751) FEATURES KEY PARAMETERS 280.56 x O70.2 10s Short Circuit Withstand 16 0.218VCES 1700V VCE(sat) * (typ) 2.7 V High Thermal Cycling Capability screwing depth0.2 0.240 44IC (max) 800A max 8 Non Punch Through Silicon 0.2 0.253 57I

DIM1600FSM17-A000 Single Switch IGBT Module Replaces DS5455-3.2 DS5455-4 October 2010 (LN27663) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1700V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 1600A Non Punch Through Silicon IC(PK) (max) 3200A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the

DIM100PHM33-F000 Half Bridge IGBT Module Replaces DS5764-1.2 DS5764-2 October 2011 (LN28815) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.8V High Thermal Cycling Capability IC (max) 100A Soft Punch Through Silicon IC(PK) (max) 200A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals

DIM400PBM17-A000 IGBT Bi-Directional Switch Module Replaces DS5524-2.3 DS5524-3 November 2010 (LN27710) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VDRM 1700V VT* (typ) 4.9V High Thermal Cycling Capability IC (max) 400A Non Punch Through Silicon IC(PK) (max) 800A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not th

Single N-channel MOSFET with schottky diodeELM14702AA-NGeneral description Features ELM14702AA-N uses advanced trench Vds=30V Schottky diodetechnology to provide excellent Rds(on) Id=11A Vds(V)=30Vand low gate charge. Rds(on)

Single P-channel MOSFETELM14409AA-NGeneral description Features ELM14409AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-15A (Vgs=-10V)resistance. Rds(on)

Single N-channel MOSFETELM13424CA-SGeneral description Features ELM13424CA-S uses advanced trench technology Vds=30Vto provide excellent Rds(on), low gate charge and Id=3.8A (Vgs=10V)operation with gate voltages as low as 2.5V. Rds(on)

(common drain)Dual N-channel MOSFET ELM18814BA-SGeneral description Features ELM18814BA-S uses advanced trench technology Vds=20Vto provide excellent Rds(on), low gate charge and Id=7.5A (Vgs=10V)operation with gate voltages as low as 1.8V and internal Rds(on)

Single N-channel MOSFETELM14430AA-NGeneral description Features ELM14430AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=18A (Vgs=10V)resistance. Rds(on)

Single P-channel MOSFETELM13421CA-SGeneral description Features ELM13421CA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-2.6A (Vgs=-10V)resistance. Rds(on)

Single P-channel MOSFETELM14427AA-NGeneral description Features ELM14427AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-12.5A (Vgs=-20V)resistance. Internal ESD protection is included. Rds(on)

Single N-channel MOSFETELM13414CA-SGeneral description Features ELM13414CA-S uses advanced trench technology Vds=20Vto provide excellent Rds(on), low gate charge and Id=4.2A (Vgs=4.5V)operation with gate voltages as low as 1.8V. Rds(on)

Single P-channel MOSFETELM14411AA-NGeneral description Features ELM14411AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-8A (Vgs=-10V)resistance. Rds(on)

Dual N-channel MOSFETELM14822AA-NGeneral description Features ELM14822AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on) and low gate charge. Id=8.5A (Vgs=10V) Rds(on)

P MOSFETELM13419CA-S ELM13419CA-S P Vds=-20V MOSFET Id=-3.5A (Vgs=-10V) ESD Rds(on)

Single P-channel MOSFETELM14419AA-NGeneral description Features ELM14419AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-9.7A (Vgs=-10V)resistance. Rds(on)

Single N-channel MOSFETELM14468AA-NGeneral description Features ELM14468AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=11.6A (Vgs=10V)resistance. Rds(on)

Single P-channel MOSFETELM14425AA-NGeneral description Features ELM14425AA-N uses advanced trench technology to Vds=-38Vprovide excellent Rds(on), low gate charge and low gate Id=-14A (Vgs=-20V)resistance. Internal ESD protection is included. Rds(on)

Single N-channel MOSFETELM13416CA-SGeneral description Features ELM13416CA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and operation Id=6.5A (Vgs=4.5V)with gate voltages as low as 1.8V and internal ESD Rds(on)

Single N-channel MOSFETELM17400FA-SGeneral description Features ELM17400FA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and operation Id=1.7A (Vgs=10V)with gate voltages as low as 2.5V. Rds(on)

Single P-channel MOSFETELM16405EA-SGeneral description Features ELM16405EA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-5A (Vgs=-10V)resistance. Rds(on)

Single N-channel MOSFETELM14408AA-NGeneral description Features ELM14408AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=12A (Vgs=10V)resistance. Rds(on)

Single N-channel MOSFETELM16408EA-SGeneral description Features ELM16408EA-S uses advanced trench technology Vds=20Vto provide excellent Rds(on), low gate charge and Id=8.8A (Vgs=10V)operation with gate voltages as low as 1.8V and internal Rds(on)

Single P-channel MOSFETELM13413CA-SGeneral description Features ELM13413CA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-3A (Vgs=-4.5V)resistance. Rds(on)

Single N-channel MOSFETELM13434CA-SGeneral description Features The ELM13434CA-S uses advanced trench technology to Vds=30Vprovide excellent RDS(ON) and low gate charge. This Id=4.2A (Vgs=10V)device is suitable for use as a load switch or in PWM Rds(on)

Single P-channel MOSFETELM17401FA-SGeneral description Features ELM17401FA-S uses advanced trench technology Vds=-30Vto provide excellent Rds(on), low gate charge and Id=-1.2A (Vgs=-10V)operation with gate voltages as low as 2.5V. Rds(on)

Single N-channel MOSFETELM17412GA-SGeneral description Features ELM17412GA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and operation Id=2.1A (Vgs=10V)with gate voltages as low as 2.5V. Rds(on)