Справочник транзисторов. M1

 

Биполярный транзистор M1 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: M1
   Тип материала: Ge
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.1 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 25 V
   Макcимальный постоянный ток коллектора (Ic): 0.012 A
   Предельная температура PN-перехода (Tj): 75 °C
   Ёмкость коллекторного перехода (Cc): 1.4 pf
   Статический коэффициент передачи тока (hfe): 20
   Корпус транзистора: CAN

 Аналоги (замена) для M1

 

 

M1 Datasheet (PDF)

 0.1. Size:537K  1
ptm15003t.pdf

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Green PackageTO-92 PTM15003T NPN Silicon Power Transistor 1.5 Amperes / 1.1 Watts Switch Mode series NPN silicon Power Transistor 1 2 - High voltage, high speed power switching 3 - Suitable for switching regulator, inverters motor controls 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25 unless otherwise noted CHARACTERISTICS SYMBOL RATING UNIT Coll

 0.3. Size:522K  1
gwm13s65y.pdf

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GWM13S65Y POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to withstand SJ MOS high energy in the avalanche mode and switch efficiently. This Higher Current Rating new high energy device also offers a drain-to-source diode Lower Rds(on) with fast recovery time. Designed for high voltage, high speed Lower Capacitances switchin

 0.5. Size:680K  general electric
rfm12p08 rfm12p10.pdf

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M1

RFM12P08

 0.6. Size:174K  motorola
mtm15n40e.pdf

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M1

 0.7. Size:104K  motorola
mpm1a800 .pdf

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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPM1A800A120C5/DMPM1A800A120C5Motorola Preferred DevicePreliminary Data SheetHybrid Power Module800 AMP, 1200 VOLT HYBRID P

 0.8. Size:887K  motorola
mtm10n25 mtp10n25.pdf

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M1

 0.9. Size:103K  motorola
mpm1a120 .pdf

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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPM1A120A120C5/DMPM1A120A120C5Motorola Preferred DevicePreliminary Data SheetHybrid Power Module1200 AMP, 1200 VOLT HYBRID

 0.10. Size:716K  motorola
mtm10n100e.pdf

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 0.11. Size:200K  motorola
mtm15n45 mtm15n50.pdf

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This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material C

 0.12. Size:141K  international rectifier
irgkin050m12.pdf

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M1

 0.13. Size:1877K  international rectifier
pm15cma060.pdf

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M1

 0.14. Size:309K  international rectifier
irfm150.pdf

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M1

 0.15. Size:211K  international rectifier
irfm140.pdf

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M1

 0.16. Size:89K  philips
phm18nq15t.pdf

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PHM18NQ15TTrenchMOS standard level FETRev. 02 20 August 2004 Product dataM3D8791. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features SOT96 (SO-8) footprint compatible Low thermal resistance Surface mounted package Low profile.1.3 Applications DC-to-DC converter primary sid

 0.17. Size:276K  philips
phm15nq20t.pdf

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PHM15NQ20TTrenchMOS standard level FETRev. 03 11 September 2003 Product dataM3D8791. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features SOT96 (SO-8) footprint compatible Low thermal resistance Surface mounted package Low profile.1.3 Applications DC-to-DC primary side Porta

 0.18. Size:236K  philips
phm12nq20t.pdf

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PHM12NQ20TTrenchMOS standard level FETRev. 01 30 January 2003 Preliminary data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PHM12NQ20T in SOT685-1 (QLPAK).1.2 Features SOT96 (SO-8) footprint compatible Low thermal resistance Surface mount package Low profile.

 0.19. Size:36K  philips
pztm1101 1.pdf

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DISCRETE SEMICONDUCTORSDATA SHEETk, halfpageM3D087PZTM1101NPN transistor/Schottky-diodemodule1996 May 09Product specificationPhilips Semiconductors Product specificationNPN transistor/Schottky-diode module PZTM1101FEATURES DESCRIPTION Low output capacitance Combination of an NPN transistor and a Schottky barrier diode in a plasticSOT223 package. PNP complement: PZT

 0.20. Size:41K  philips
pztm1102 1.pdf

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DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D087PZTM1102PNP transistor/Schottky-diodemodule1996 May 09Product specificationFile under Discrete Semiconductors, SC01Philips Semiconductors Product specificationPNP transistor/Schottky-diode module PZTM1102FEATURES DESCRIPTION Low output capacitance Combination of a PNP transistor and a Schottky barrier diode i

 0.21. Size:59K  st
am1011-300.pdf

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AM1011-300RF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTING.LOW RF THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.400 x .600 2LFL (M207).P 325 W MIN. WITH 7.7 dB GAINOUT =hermetically sealed.1030/1090 MHZ OPERATIONBRANDINGORDER CODEAM1011-300AM1011-300PIN CONNECTION

 0.22. Size:64K  st
am1011-075.pdf

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AM1011-075RF & MICROWAVE TRANSISTORSL-BAND AVIONICS APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.10:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE .400 x .400 2LFL (S036)hermetically sealed.P = 75 W MIN. WITH 9.2 dB GAINOUTORDER CODE BRANDINGAM1011-075 1011-75DESCRIPTIONPIN CONNE

 0.23. Size:1046K  st
stgw25m120df3.pdf

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STGW25M120DF3 STGWA25M120DF3Trench gate field-stop IGBT, M series 1200 V, 25 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 25 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria

 0.24. Size:43K  st
am1011-070.pdf

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AM1011-070RF & MICROWAVE TRANSISTORSL-BAND AVIONICS APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.P = 70 W MIN. WITH 6.7 dB GAINOUT.400 x .400 2NLFL (S042)hermetically sealedORDER CODE BRANDINGAM1011-70 1011-70DESCRIPTIONPIN CONNECTIONThe AM1011-070

 0.25. Size:1030K  st
stgw40m120df3 stgwa40m120df3.pdf

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STGW40M120DF3 STGWA40M120DF3Trench gate field-stop IGBT, M series 1200 V, 40 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 40 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria

 0.26. Size:1046K  st
stgwa25m120df3.pdf

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STGW25M120DF3 STGWA25M120DF3Trench gate field-stop IGBT, M series 1200 V, 25 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 25 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria

 0.27. Size:1049K  st
stgwa15m120df3.pdf

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STGW15M120DF3 STGWA15M120DF3Trench gate field-stop IGBT, M series 1200 V, 15 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 15 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria

 0.28. Size:1031K  st
stgwa40m120df3.pdf

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STGW40M120DF3 STGWA40M120DF3Trench gate field-stop IGBT, M series 1200 V, 40 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 40 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria

 0.29. Size:92K  st
am1214-300.pdf

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AM1214-300RF & MICROWAVE TRANSISTORSL-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.5:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.400 x .500 2LFL (S038).P = 270 W MIN. WITH 6.3 dB GAINOUThermetically sealedORDER CODE BRANDINGAM1214-300 1214-300PIN CONNECTIONDESCRIP

 0.30. Size:87K  st
am1517.pdf

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AM1517-012RF & MICROWAVE TRANSISTORSSATELLITE COMMUNICATIONS APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED. :1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.METAL/CERAMIC HERMETIC PACKAGE.P 12 W MIN. WITH 8.5 dB GAIN .400 x .400 2NLFL (S042)OUT =hermeticallysealedORDER CODE BRANDINGAM1517-012 1517-12PIN CONNECTIONDESCRIPTION

 0.31. Size:1018K  st
stgw15m120df3 stgwa15m120df3.pdf

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STGW15M120DF3 STGWA15M120DF3Trench gate field-stop IGBT, M series 1200 V, 15 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 15 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria

 0.32. Size:54K  st
am1011-500.pdf

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AM1011-500RF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.P 500 W MIN. WITH 8.5 dB MIN.OUT =GAIN.10:1 LOAD VSWR CAPABILITY @ 10S.,1% DUTY.SIXPAC HERMETIC METAL/CERAMICPACKAGE.EMITTER SITE BALLASTED OVERLAY.400 x .600 2LFL (M198)GEOMETRYhermetically sealed.REFRACTORY/GOLD METALLIZATION.LOW THERMAL RESISTANCE ORDER CODEBRANDINGAM1011-500.INTERNAL INPUT/OUT

 0.33. Size:64K  st
am1214-325.pdf

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AM1214-325RF & MICROWAVE TRANSISTORSL-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.5:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.400 x .500 2LFL (S038).POUT 325 W MIN. WITH 6.4 dB GAIN hermetically sealed=ORDER CODE BRANDINGAM1214-325 1214-325PIN CONNECTIONDESCRIPTI

 0.34. Size:57K  st
am1214-200.pdf

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AM1214-200RF & MICROWAVE TRANSISTORSL-BAND RADAR APPLICATIONSPRELIMINARY DATA.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.P 200 W MIN. WITH 7.0 dB GAINOUT =.400 x .500 2LFL (M205)hermetically sealedORDER CODE BRANDINGAM1214-200 1214-200PIN CONNECTIONDESCRIPTION

 0.35. Size:92K  st
am1011.pdf

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AM1011-400RF & MICROWAVE TRANSISTORSL-BAND AVIONICS APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.15:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.400 x .500 2LFL (S038).POUT 400 W MIN. WITH 8.0 dB GAIN=hermetically sealedORDER CODE BRANDINGAM1011-400 1011-400PIN CONNECTIONDESC

 0.36. Size:35K  st
am1214.pdf

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AM1214-100RF & MICROWAVE TRANSISTORSL-BAND RADAR APPLICATIONSPRELIMINARY DATA.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.P 100 W MIN. WITH 6.0 dB GAINOUT =.400 x .500 2LFL (S038)hermetically sealedORDER CODE BRANDINGAM1214-100 1214-100PIN CONNECTIONDESCRIPTION

 0.37. Size:91K  st
am1517-925.pdf

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AM1517-025RF & MICROWAVE TRANSISTORSSATELLITE COMMUNICATIONS APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED. :1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE .400 x .400 2NLFL (S042)hermetically sealed.P 25 W MIN. WITH 8.5 dB GAIN=OUTORDER CODE BRANDINGAM1517-025 1517-25PIN CON

 0.38. Size:1031K  st
stgw40m120df3.pdf

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STGW40M120DF3 STGWA40M120DF3Trench gate field-stop IGBT, M series 1200 V, 40 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 40 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria

 0.39. Size:1049K  st
stgw15m120df3.pdf

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STGW15M120DF3 STGWA15M120DF3Trench gate field-stop IGBT, M series 1200 V, 15 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 15 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria

 0.40. Size:95K  st
am1214-175.pdf

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AM1214-175RF & MICROWAVE TRANSISTORSL-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.3:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.400 x .500 2LFL (S038).POUT = 160 W MIN. WITH 7.3 dB GAINhermetically sealedORDER CODE BRANDINGAM1214-175 1214-175PIN CONNECTIONDESCRIPTI

 0.41. Size:241K  toshiba
tk40p03m1.pdf

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TK40P03M1MOSFETs Silicon N-Channel MOS (U-MOS-H)TK40P03M1TK40P03M1TK40P03M1TK40P03M11. Applications1. Applications1. Applications1. Applications DC-DC Converters Desktop PCs2. Features2. Features2. Features2. Features(1) High-speed switching(2) Low gate charge: QSW = 5.7 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 8.3 m (typ.) (VGS = 10

 0.42. Size:242K  toshiba
tk50p03m1.pdf

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TK50P03M1MOSFETs Silicon N-Channel MOS (U-MOS-H)TK50P03M1TK50P03M1TK50P03M1TK50P03M11. Applications1. Applications1. Applications1. Applications DC-DC Converters Desktop PCs2. Features2. Features2. Features2. Features(1) High-speed switching(2) Low gate charge: QSW = 8.2 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 5.8 m (typ.) (VGS = 10

 0.43. Size:235K  toshiba
tk40p04m1.pdf

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TK40P04M1MOSFETs Silicon N-Channel MOS (U-MOS-H)TK40P04M1TK40P04M1TK40P04M1TK40P04M11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Low gate charge: QSW = 7.4 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 8.5 m (t

 0.44. Size:237K  toshiba
tk20p04m1.pdf

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TK20P04M1MOSFETs Silicon N-Channel MOS (U-MOS-H)TK20P04M1TK20P04M1TK20P04M1TK20P04M11. Applications1. Applications1. Applications1. Applications DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) High-speed switching(2) Low gate charge: QSW = 3.7 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 19 m

 0.45. Size:142K  toshiba
gt60m101.pdf

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 0.46. Size:248K  toshiba
gt60m104.pdf

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 0.47. Size:103K  toshiba
gt50m101.pdf

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 0.48. Size:194K  toshiba
sm12j45 sm12g45.pdf

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SM12G45,SM12J45,SM12G45A,SM12J45A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM12G45,SM12J45,SM12G45A,SM12J45A AC POWER CONTROL APPLICATIONS Unit: mm Repetitive Peak Off-State Voltage : VDRM = 400, 600V R.M.S On-State Current : I = 12A T (RMS) High Commutating (dv / dt) MAXIMUM RATINGS CHARACTERISTIC SYMBOL RATING UNITSM12G45 400 SM12G45A Repeti

 0.49. Size:327K  toshiba
gt40m101.pdf

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GT40M101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT40M101 Unit: mmHIGH POWER SWITCHING APPLICATIONS High input impedance High speed : tf = 0.4s (Max.) Low saturation voltage : VCE(sat) = 3.4V (Max.) Enhancement mode type MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNITCollector-Emitter Voltage VCES 900 VGate-Emitter Voltage V

 0.50. Size:294K  toshiba
tk45p03m1.pdf

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TK45P03M1MOSFETs Silicon N-Channel MOS (U-MOS-H)TK45P03M1TK45P03M1TK45P03M1TK45P03M11. Applications1. Applications1. Applications1. Applications DC-DC Converters Desktop Computers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Low gate charge: QSW = 8.0 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 6.5 m (typ.) (VG

 0.51. Size:163K  toshiba
tpm1919-60.pdf

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MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TPM1919-60 TECHNICAL DATA FEATURES HIGH POWER PARTIALLY MATCHED TYPE P1dB=48.0dBm at 1.96GHz HIGH GAIN HERMETICALLY SEALED PACKAGE G1dB=13.0dB at 1.96GHz RF PERFORMANCE SPECIFICATIONS ( Ta= 25C ) CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX.Output Power at 1dB Gain P1dB dBm 47.0 48.0 Compression

 0.53. Size:175K  toshiba
rfm12u7x.pdf

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RFM12U7X TOSHIBA Field Effect Transistor Silicon N Channel MOS Type RFM12U7X VHF- and UHF-band Amplifier Applications Unit: mm(Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use. Do not use these TOSHIBA products listed in t

 0.54. Size:238K  toshiba
tk50p04m1.pdf

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TK50P04M1MOSFETs Silicon N-Channel MOS (U-MOS-H)TK50P04M1TK50P04M1TK50P04M1TK50P04M11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Low gate charge: QSW = 9.4 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 6.7 m (t

 0.55. Size:231K  toshiba
tk60p03m1.pdf

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TK60P03M1MOSFETs Silicon N-Channel MOS (U-MOS-H)TK60P03M1TK60P03M1TK60P03M1TK60P03M11. Applications1. Applications1. Applications1. Applications DC-DC Converters Desktop Computers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Low gate charge: QSW = 13 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 4.6 m (typ.) (VGS

 0.56. Size:54K  renesas
r07ds0528ej rjh60m1dpp.pdf

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Preliminary DatasheetRJH60M1DPP-M0 R07DS0528EJ0100600 V - 8 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techn

 0.57. Size:53K  renesas
r07ds0529ej rjh60m1dpe.pdf

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Preliminary DatasheetRJH60M1DPE R07DS0529EJ0100600 V - 8 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer technolo

 0.58. Size:133K  renesas
rjk03m1dpa.pdf

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Preliminary Datasheet RJK03M1DPA 30V, 50A, 2.3mmax. R07DS0765EJ0200N Channel Power MOS FET Rev.2.00High Speed Power Switching Feb 08, 2013Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DE-A(Package nam

 0.59. Size:97K  renesas
rjh60m1dpe.pdf

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Preliminary Datasheet RJH60M1DPE R07DS0529EJ0300600V - 8A - IGBT Rev.3.00Application: Inverter May 25, 2012Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer technolo

 0.60. Size:102K  renesas
rjh60m1dpp-m0.pdf

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Preliminary Datasheet RJH60M1DPP-M0 R07DS0528EJ0300600V - 8A - IGBT Rev.3.00Application: Inverter May 25, 2012Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (75 ns typ.) in one package Trench gate and thin wafer techno

 0.61. Size:227K  fairchild semi
irlm110a.pdf

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IRLM110AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.44 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.5 A Improved Gate Charge Extended Safe Operating AreaSOT-223 Lower Leakage Current : 10 A(Max.) @ VDS = 100V2 Lower RDS(ON) : 0.336 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum R

 0.62. Size:639K  fairchild semi
ssm1n45b.pdf

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SSM1N45B 450V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.5A, 450V, RDS(on) = 4.25 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.5 nC)planar, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has been especially tailored to 100% avalanche te

 0.63. Size:263K  fairchild semi
irfm110a.pdf

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IRFM110AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.5 A Improved Gate Charge Extended Safe Operating AreaSOT-223 Lower Leakage Current : 10 A (Max.) @ VDS = 100V2 Lower RDS(ON) : 0.289 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbo

 0.64. Size:267K  fairchild semi
irfm120atf.pdf

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IRFM120AAdvanced Power MOSFETIEEE802.3af CompatibleFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.3 A Improved Gate Charge Extended Safe Operating AreaSOT-223 Lower Leakage Current : 10 A (Max.) @ VDS = 100V2 Lower RDS(ON) : 0.155 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum

 0.65. Size:269K  fairchild semi
irfm120a.pdf

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IRFM120AAdvanced Power MOSFETIEEE802.3af CompatibleFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.3 A Improved Gate Charge Extended Safe Operating AreaSOT-223 Lower Leakage Current : 10 A (Max.) @ VDS = 100V2 Lower RDS(ON) : 0.155 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum

 0.66. Size:2025K  fairchild semi
fsam15sh60a.pdf

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FSAM15SH60ASPMTM (Smart Power Module)General Description FeaturesFSAM15SH60A is an advanced smart power module UL Certified No. E209204(SPM) that Fairchild has newly developed and designed to 600V-15A 3-phase IGBT inverter bridge including controlprovide very compact and high performance ac motorICs for gate driving and protection drives mainly targeting high speed low-pow

 0.67. Size:1934K  fairchild semi
fsam10sh60a.pdf

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FSAM10SH60ASPMTM (Smart Power Module)General Description FeaturesFSAM10SH60A is an advanced smart power module UL Certified No. E209204(SPM) that Fairchild has newly developed and designed to 600V-10A 3-phase IGBT inverter bridge including controlprovide very compact and high performance ac motorICs for gate driving and protection drives mainly targeting high speed low-pow

 0.68. Size:229K  fairchild semi
irlm120a.pdf

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IRLM120AAdvanced Power MOSFETFEATURESBVDSS = 100 Vn Avalanche Rugged TechnologyRDS(on) = 0.22 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = 2.3 An Improved Gate Chargen Extended Safe Operating AreaSOT-223n Lower Leakage Current : 10 A(Max.) @ VDS = 100V2n Lower RDS(ON) : 0.176 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum Ratings

 0.69. Size:74K  nec
upa859td vt m16.pdf

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DATA SHEETNPN SILICON RF TWIN TRANSISTORPA859TDNPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)IN A 6-PIN LEAD-LESS MINIMOLDFEATURES Low voltage operation 2 different built-in transistors (2SC5737, 2SC5676)Q1: Low noise transistorNF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHzQ2: Low phase distortion transistor suited for OSC applicationsfT = 5.

 0.70. Size:234K  nec
nesg2101m16.pdf

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NPN SILICON GERMANIUM RF TRANSISTORNESG2101M16NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high-gain amplification PO (1 dB) = 21 dBm TYP. @ VCE = 3.6 V, IC (set) = 10 mA (RF OFF), f = 2 GHz

 0.71. Size:157K  nec
ne685m13.pdf

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NEC's NPN SILICON TRANSISTORNE685M13OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: Small transistor outline 1.0 X 0.5 X 0.5 mm0.70.05(Bottom View) Low profile / 0.50 mm package height0.5+0.1 0.050.3 Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT:fT = 12 GHz2 LOW NOISE FIGU

 0.72. Size:50K  nec
upa891td kh m16.pdf

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DATA SHEETNPN SILICON RF TWIN TRANSISTORPA891TDNPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS)IN A 6-PIN LEAD-LESS MINIMOLDFEATURES Built-in low phase distortion transistor suited for OSC operationfT = 5.0 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz Built-in 2 transistors (2 2SC5600) 6-pin lead-less minimold packageBUILT-IN TRA

 0.73. Size:206K  nec
nesg4030m14.pdf

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NPN SILICON GERMANIUM C RF TRANSISTORNESG4030M14NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) FEATURES The device is an ideal choice for low noise, high-gain amplification NF = 1.1 dB TYP., Ga = 11.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz Maximum stable power gain: MSG = 15 dB TYP. @ VCE = 2 V, IC = 20 mA,

 0.74. Size:78K  nec
upa855td vn m16.pdf

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DATA SHEETNPN SILICON RF TWIN TRANSISTORPA855TDNPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)IN A 6-PIN LEAD-LESS MINIMOLDFEATURES Low voltage operation 2 different built-in transistors (2SC5737, 2SC5745)Q1: Low noise transistorNF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHzQ2: Low phase distortion transistor suited for OSC operationfT = 5.5 G

 0.75. Size:239K  nec
ne851m13.pdf

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NEC's NPN SILICON TRANSISTOR NE851M13OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: Small transistor outline0.70.05 1.0 X 0.5 X 0.5 mm(Bottom View) Low profile / 0.50 mm package height0.5+0.1 0.050.3 Flat lead style for better RF performance IDEAL FOR 3 GHz OSCILLATORS LOW PHASE NOISE23 L

 0.76. Size:148K  nec
ne681m13.pdf

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NEC's NPN SILICON TRANSISTOR NE681M13OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: Small transistor outline +0.1+0.10.50.050.15 0.31.0 X 0.5 X 0.5 mm0.05 Low profile / 0.50 mm package height12 Flat lead style for better RF performance0.35 HIGH GAIN BANDWIDTH PRODUCT:+0.1+0.11.0 0.70.0

 0.77. Size:19K  nec
2sc5616 ne688m13.pdf

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PRELIMINARY DATA SHEETNPN SILICON TRANSISTOR NE688M13OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: Small transistor outline +0.1+0.10.50.050.150.05 0.31.0 X 0.5 X 0.5 mm Low profile / 0.50 mm package height12 Flat lead style for better RF performance0.35 HIGH GAIN BANDWIDTH PRODUCT:+0.1+0.1

 0.78. Size:30K  nec
upa895ts kp m16.pdf

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DATA SHEETNPN SILICON RF TWIN TRANSISTORPA895TSNPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES Built-in low voltage operation, low phase distortion transistor suited for OSC applications fT = 4.5 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz Built-in 2 transistors (2 2SC5800) 6-pin super lead-les

 0.79. Size:89K  nec
upa841td nq m16.pdf

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DATA SHEETNPN SILICON RF TWIN TRANSISTORPA841TDNPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)IN A 6-PIN LEAD-LESS MINIMOLDFEATURES Low voltage operation 2 different built-in transistors (2SC5435, 2SC5600)Q1: Built-in high-gain transistorfT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHzQ2: Built-in low phase distortion

 0.80. Size:471K  nec
ne894m13.pdf

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NPN SILICON TRANSISTOR NE894M13FEATURES OUTLINE DIMENSIONS (Units in mm)PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: Small transistor outline 0.70.05 1.0 X 0.5 X 0.5 mm (Bottom View) Low profile / 0.50 mm package height 0.5+0.1 0.050.3 Flat lead style for better RF performance IDEAL FOR > 3 GHz OSCILLATORS LOW NOISE, HIGH GAIN23

 0.81. Size:225K  nec
nesg2021m16.pdf

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NPN SILICON GERMANIUM RF TRANSISTORNESG2021M16NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f

 0.82. Size:175K  nec
ne662m16.pdf

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NPN SILICON HIGHNE662M16FREQUENCY TRANSISTORFEATURES HIGH GAIN BANDWIDTH: fT = 25 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz NEW LOW PROFILE M16 PACKAGE: Flat Lead Style with a height of just 0.50mmDESCRIPTIONNEC's NE662M16 is fabricated using NEC's UHS0 25 GHz fTM16wafer process. With a typical transition frequ

 0.83. Size:261K  nec
nesg3032m14.pdf

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NPN SILICON GERMANIUM RF TRANSISTORNESG3032M14NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PACKAGE) FEATURES The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz

 0.84. Size:19K  nec
2sc5615 ne681m13.pdf

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PRELIMINARY DATA SHEETNPN SILICON TRANSISTOR NE681M13OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: Small transistor outline +0.1+0.10.50.050.150.05 0.31.0 X 0.5 X 0.5 mm Low profile / 0.50 mm package height12 Flat lead style for better RF performance0.35 HIGH GAIN BANDWIDTH PRODUCT:+0.1+0.1

 0.85. Size:79K  nec
upa863td xc m16.pdf

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DATA SHEETNPN SILICON RF TWIN TRANSISTORPA863TDNPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)IN A 6-PIN LEAD-LESS MINIMOLDFEATURES Low voltage operation 2 different built-in transistors (2SC5436, 2SC5800)Q1: Built-in high gain transistorfT = 12.0 GHz TYP., S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHzQ2: Built-in low phase distortion

 0.86. Size:223K  nec
nesg2031m16.pdf

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NPN SILICON GERMANIUM RF TRANSISTORNESG2031M16NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.2 GHz

 0.87. Size:207K  nec
nesg3031m14.pdf

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NPN SILICON GERMANIUM RF TRANSISTORNESG3031M14NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) FEATURES The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz NF = 0.95 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz

 0.88. Size:85K  nec
upa860td vv m16.pdf

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DATA SHEETNPN SILICON RF TWIN TRANSISTORPA860TDNPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)IN A 6-PIN LEAD-LESS MINIMOLDFEATURES Low voltage operation 2 different built-in transistors (2SC5435, 2SC5786)Q1: High-gain transistorfT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHzQ2: Low phase distortion transistor suitab

 0.89. Size:195K  nec
ne687m13.pdf

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NE687M13NEC's NPN SILICON TRANSISTOROUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: Small transistor outline0.70.05 1.0 X 0.5 X 0.5 mm(Bottom View) Low profile / 0.50 mm package height0.5+0.1 0.050.3 Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT:fT = 14 GHz23 LOW NOISE F

 0.90. Size:78K  nec
upa861td vx m16.pdf

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DATA SHEETNPN SILICON RF TWIN TRANSISTORPA861TDNPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)IN A 6-PIN LEAD-LESS MINIMOLDFEATURES Low voltage operation 2 different built-in transistors (2SC5436, 2SC5786)Q1: High-gain transistorfT = 12.0 GHz TYP., S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHzQ2: Low phase distortion transistor suitab

 0.91. Size:41K  nec
upa895td kp m16.pdf

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DATA SHEETNPN SILICON RF TWIN TRANSISTORPA895TDNPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS)IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE)FEATURES Built-in low phase distortion transistor suited for OSC applicationsfT = 4.5 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz Built-in 2 transistors (2 2SC5800) 6-pin lead-less minimol

 0.92. Size:87K  nec
upa854td vl m16.pdf

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DATA SHEETNPN SILICON RF TWIN TRANSISTORPA854TDNPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)IN A 6-PIN LEAD-LESS MINIMOLDFEATURES Low voltage operation 2 different built-in transistors (2SC5435, 2SC5745)Q1: High gain transistorfT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHzQ2: Low phase distortion transistor suited

 0.93. Size:83K  nec
upa851td vh m16.pdf

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DATA SHEETNPN SILICON RF TWIN TRANSISTORPA851TDNPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)IN A 6-PIN LEAD-LESS MINIMOLDFEATURES Low voltage operation 2 different built-in transistors (2SC5737, 2SC5736)Q1: Low noise transistorNF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHzQ2: Low phase distortion transistor suited for OSC applicationsfT = 5.

 0.94. Size:275K  nec
nesg3033m14.pdf

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NPN SILICON GERMANIUM RF TRANSISTORNESG3033M14NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) FEATURES The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz SiG

 0.95. Size:49K  nec
upa892td kn m16.pdf

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DATA SHEETNPN SILICON RF TWIN TRANSISTORPA892TDNPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS)IN A 6-PIN LEAD-LESS MINIMOLDFEATURES Ideal for low noise high-gain amplification and oscillation at 3 GHz or overNF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz Maximum available power gain: MAG = 12.5 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz High fT: fT =

 0.96. Size:96K  nec
upa862td vy m16.pdf

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DATA SHEETNPN SILICON RF TWIN TRANSISTORPA862TDNPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)IN A 6-PIN LEAD-LESS MINIMOLDFEATURES Low voltage operation 2 different built-in transistors (2SC5435, 2SC5800)Q1: Built-in high gain transistorfT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHzQ2: Built-in low phase distortion

 0.97. Size:53K  nec
upa873td cp m16.pdf

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DATA SHEETNPN SILICON RF TWIN TRANSISTORPA873TDNPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS)IN A 6-PIN LEAD-LESS MINIMOLDFEATURES Built-in low phase distortion transistor suited for OSC applicationsfT = 4.5 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz Built-in 2 transistors (2 2SC5800) 6-pin lead-less minimold packageBUILT-IN

 0.98. Size:19K  nec
ne856m13 2sc5614.pdf

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PRELIMINARY DATA SHEETNPN SILICON TRANSISTOR NE856M13OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: Small transistor outline +0.1+0.10.50.051.0 X 0.5 X 0.5 mm 0.150.05 0.3 Low profile / 0.50 mm package height12 Flat lead style for better RF performance0.35 LOW NOISE FIGURE:+0.1+0.11.0 0.7

 0.99. Size:30K  nec
upa873ts cp m16.pdf

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DATA SHEETNPN SILICON RF TWIN TRANSISTORPA873TSNPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES Built-in low voltage operation, low phase distortion transistor suited for OSC applications fT = 4.5 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz Built-in 2 transistors (2 2SC5800) 6-pin super lead-les

 0.100. Size:45K  nec
upa828td kl m16.pdf

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DATA SHEETNPN SILICON RF TWIN TRANSISTORPA828TDNPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES Built-in low phase distortion transistor suited for OSC applications fT = 9.0 GHz TYP., S21e2 = 7.5 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz Built-in 2 transist

 0.102. Size:94K  njs
mtm12n10 mtp12n10e.pdf

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 0.103. Size:85K  njs
mtm15n20.pdf

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rfm12n08l rfm12n10l rfp12n08l.pdf

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 0.107. Size:58K  njs
mtm15n35 mtm15n40.pdf

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 0.110. Size:89K  njs
rfm15n05l rfm15n06l.pdf

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 0.111. Size:717K  nxp
buk9m10-30e.pdf

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BUK9M10-30EN-channel 30 V, 10 m logic level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetit

 0.112. Size:720K  nxp
buk9m12-60e.pdf

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BUK9M12-60EN-channel 60 V, 12 m logic level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetit

 0.113. Size:724K  nxp
buk9m15-60e.pdf

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BUK9M15-60EN-channel 60 V, 15 m logic level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetit

 0.114. Size:281K  nxp
buk7m15-40h.pdf

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BUK7M15-40HN-channel 40 V, 15.0 m standard level MOSFET in LFPAK3329 January 2019 Product data sheet1. General descriptionAutomotive qualified standard level N-channel MOSFET in an LFPAK33 package using Trench 9TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in highperformance automotive applications.2. Features and benefits Fully aut

 0.115. Size:725K  nxp
buk9m14-40e.pdf

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BUK9M14-40EN-channel 40 V, 14 m logic level MOSFET in LFPAK3313 May 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive av

 0.116. Size:718K  nxp
buk9m19-60e.pdf

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BUK9M19-60EN-channel 60 V, 19 m logic level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetit

 0.117. Size:723K  nxp
buk9m120-100e.pdf

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BUK9M120-100EN-channel 100 V, 120 m logic level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Rep

 0.118. Size:717K  nxp
buk7m15-60e.pdf

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BUK7M15-60EN-channel 60 V, 15 m standard level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK33 (Power33) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 Compliant R

 0.119. Size:718K  nxp
buk9m17-30e.pdf

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BUK9M17-30EN-channel 30 V, 17 m logic level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetit

 0.120. Size:718K  nxp
buk9m11-40e.pdf

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BUK9M11-40EN-channel 40 V, 11 m logic level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetit

 0.121. Size:278K  nxp
buk7m11-40h.pdf

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BUK7M11-40HN-channel 40 V, 11.0 m standard level MOSFET in LFPAK3329 January 2019 Product data sheet1. General descriptionAutomotive qualified standard level N-channel MOSFET in an LFPAK33 package using Trench 9TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in highperformance automotive applications.2. Features and benefits Fully aut

 0.122. Size:724K  nxp
buk7m19-60e.pdf

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BUK7M19-60EN-channel 60 V, 19 m standard level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK33 (Power33) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 Compliant R

 0.123. Size:280K  nxp
buk9m15-40h.pdf

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BUK9M15-40HN-channel 40 V, 15.0 m logic level MOSFET in LFPAK3329 January 2019 Product data sheet1. General descriptionAutomotive qualified logic level N-channel MOSFET in an LFPAK33 package using Trench 9TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in highperformance automotive applications.2. Features and benefits Fully automotiv

 0.124. Size:722K  nxp
buk7m17-80e.pdf

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BUK7M17-80EN-channel 80 V, 17 m standard level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK33 (Power33) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 Compliant R

 0.125. Size:720K  nxp
buk9m156-100e.pdf

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BUK9M156-100EN-channel 100 V, 156 m logic level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Rep

 0.126. Size:722K  nxp
buk7m10-40e.pdf

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BUK7M10-40EN-channel 40 V, 10 m standard level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK33 (Power33) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 Compliant R

 0.127. Size:726K  nxp
buk7m12-40e.pdf

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BUK7M12-40EN-channel 40 V, 12 m standard level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK33 (Power33) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 Compliant R

 0.128. Size:282K  nxp
buk9m11-40h.pdf

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BUK9M11-40HN-channel 40 V, 11.0 m logic level MOSFET in LFPAK3329 January 2019 Product data sheet1. General descriptionAutomotive qualified logic level N-channel MOSFET in an LFPAK33 package using Trench 9TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in highperformance automotive applications.2. Features and benefits Fully automotiv

 0.129. Size:716K  nxp
buk7m12-60e.pdf

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BUK7M12-60EN-channel 60 V, 12 m standard level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK33 (Power33) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 Compliant R

 0.130. Size:220K  samsung
irlm110a.pdf

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IRLM110AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.44 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.5 A Improved Gate Charge Extended Safe Operating AreaSOT-223 Lower Leakage Current : 10 A (Max.) @ VDS = 100V2 Lower RDS(ON) : 0.336 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbo

 0.131. Size:950K  samsung
irfm110a.pdf

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Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V2 Lower RDS(ON) : 0.289 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

 0.132. Size:965K  samsung
irfm120a.pdf

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Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V2 Lower RDS(ON) : 0.155 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

 0.133. Size:225K  samsung
irlm120a.pdf

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IRLM120AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.22 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.3 A Improved Gate Charge Extended Safe Operating AreaSOT-223 Lower Leakage Current : 10 A (Max.) @ VDS = 100V2 Lower RDS(ON) : 0.176 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbo

 0.134. Size:87K  siemens
bsm100gal120dlck.pdf

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BSM 100 GAL 120 DN2IGBT Power Module Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 100 GAL 120 DN2 1200V 150A HALF BRIDGE GAL 2 C67076-A2012-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 120

 0.135. Size:601K  rohm
sh8m14.pdf

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Data Sheet4V Drive Nch + Pch MOSFET SH8M14 Structure Dimensions (Unit : mm)SOP8Silicon N-channel MOSFET/Silicon P-channel MOSFET(8) (5)Features1) Low on-resistance.2) High power package(SOP8).(1) (4)3) Low voltage drive(4V drive). ApplicationSwitching Packaging specifications Inner circuitPackage Taping(8) (7) (6) (5)TypeCode TBBasic o

 0.136. Size:427K  rohm
qs8m11.pdf

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Data Sheet4V Drive Nch + Pch MOSFETQS8M11 Structure Dimensions (Unit : mm)TSMT8Silicon N-channel MOSFET/(8) (7) (6) (5)Silicon P-channel MOSFETFeatures(1) (2) (3) (4)1) Low on-resistance.2) High power package(TSMT8).3) Low voltage drive(4V drive).Abbreviated symbol : M11 ApplicationSwitching Packaging specifications Inner circuitPackage Tapi

 0.137. Size:1303K  rohm
tt8m11.pdf

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Data Sheet4V Drive Nch + Pch MOSFET TT8M11 Structure Dimensions (Unit : mm)Silicon N-channel MOSFET/TSST8Silicon P-channel MOSFET(8) (7) (6) (5)Features1) Low on-resistance.(1) (2) (3) (4)2) Low voltage drive(4V drive).3) Small surface mount package(TSST8).Abbreviated symbol : M11 ApplicationSwitching Packaging specificationsInner circuit(8)

 0.138. Size:733K  rohm
qs8m13.pdf

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Data Sheet4V Drive Nch + Pch MOSFET QS8M13 Structure Dimensions (Unit : mm)TSMT8Silicon N-channel MOSFET/(8) (7) (6) (5)Silicon P-channel MOSFETFeatures1) Low on-resistance.(1) (2) (3) (4)2) High power package(TSMT8).3) Low voltage drive(4V drive).Abbreviated symbol : M13 ApplicationSwitching Inner circuit(8) (7) (6) (5) Packaging specificati

 0.139. Size:1261K  rohm
mp6m14.pdf

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Data Sheet4V Drive Nch + Pch MOSFET MP6M14 Structure Dimensions (Unit : mm)Silicon N-channel MOSFET/MPT6(Duel)Silicon P-channel MOSFET(6) (5) (4)Features1) Low on-resistance.2) Low voltage drive(4V drive).(1) (2) (3) ApplicationSwitching Packaging specifications Inner circuitPackage Taping(6) (5) (4)TypeCode TR1Basic ordering unit (

 0.140. Size:670K  rohm
vt6m1.pdf

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Data Sheet1.2V Drive Nch + Pch MOSFET VT6M1 Structure Dimensions (Unit : mm)Silicon N-channel MOSFET/VMT6Silicon P-channel MOSFET1.2 0.5(6) (5) (4)Features1) Low on-resistance.(1) (2) (3)2) Small package(VMT6).0.16 0.133) Low voltage drive(1.2V drive). 0.4 0.40.80.1Abbreviated symbol : M01 ApplicationSwitching Packaging specifications In

 0.141. Size:1284K  rohm
mp6m11.pdf

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Data Sheet4V Drive Nch + Pch MOSFET MP6M11 Structure Dimensions (Unit : mm)Silicon N-channel MOSFET/MPT6(Duel)Silicon P-channel MOSFET(6) (5) (4)Features1) Low on-resistance.2) Built-in G-S Protection Diode.(1) (2) (3)3) Small Surface Mount Package (MPT6). ApplicationSwitching Inner circuit(6) (5) (4)1 Packaging specificationsPackage Ta

 0.142. Size:583K  rohm
sh8m11.pdf

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Data Sheet4V Drive Nch + Pch MOSFET SH8M11 Structure Dimensions (Unit : mm)SOP8Silicon N-channel MOSFET/Silicon P-channel MOSFET(8) (5)Features1) Low on-resistance.2) High power package(SOP8).(1) (4)3) Low voltage drive(4V drive). ApplicationSwitching Packaging specifications Inner circuit(8) (7) (6) (5)Package TapingTypeCode TBBasic o

 0.143. Size:198K  rohm
us6m11.pdf

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1.5V Drive Nch+Pch MOSFET US6M11 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET / TUMT6Silicon P-channel MOSFET Features 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive). 4) Built-in G-S Protection Diode. Abbreviated symbol : M11 Applications Inner circuit Switching (6) (5) (4)1 Packa

 0.144. Size:530K  rohm
sh8m12.pdf

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Data Sheet4V Drive Nch + Pch MOSFET SH8M12 StructureDimensions (Unit : mm)SOP8Silicon N-channel MOSFET/Silicon P-channel MOSFET(8) (5)Features1) Low on-resistance.2) High power package(SOP8).(1) (4)3) Low voltage drive(4V drive). ApplicationSwitchingInner circuit(8) (7) (6) (5) Packaging specificationsPackage Taping2 2(1) Tr1 Sou

 0.145. Size:93K  rohm
us6m1.pdf

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US6M1 Transistors 4V+2.5V Drive Nch+Nch MOSFET US6M1 Structure Dimensions (Unit : mm) Silicon N-channel / P-channel MOSFET TUMT6 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TUMT6). Abbreviated symbol : M01 Application Power switching, DC / DC converter. Packaging specifications Equivalent circuit Package Tapi

 0.146. Size:1158K  rohm
sh8m13.pdf

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Data Sheet4V Drive Nch + Pch MOSFETSH8M13 Structure Dimensions (Unit : mm)Silicon N-channel MOSFET/SOP8Silicon P-channel MOSFET(8) (5)Features1) Low on-resistance.2) Built-in G-S Protection Diode.(1) (4)3) Small Surface Mount Package (SOP8). ApplicationSwitching Packaging specifications Inner circuitPackage Taping(8) (7) (6) (5)TypeCode

 0.147. Size:1322K  rohm
mp6m12.pdf

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Data Sheet4V Drive Nch + Pch MOSFETMP6M12 StructureDimensions (Unit : mm)Silicon N-channel MOSFET/MPT6(Duel)Silicon P-channel MOSFET(6) (5) (4)Features1) Low on-resistance.2) Built-in G-S Protection Diode.(1) (2) (3)3) Small Surface Mount Package (MPT6). ApplicationSwitchingInner circuit(6) (5) (4)1 Packaging specifications2Pac

 0.148. Size:1346K  rohm
qs8m12.pdf

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Data Sheet4V Drive Nch + Pch MOSFET QS8M12 Structure Dimensions (Unit : mm)TSMT8Silicon N-channel MOSFET/(8) (7) (6) (5)Silicon P-channel MOSFETFeatures1) Low on-resistance.(1) (2) (3) (4)2) High power package(TSMT8).3) Low voltage drive(4V drive).Abbreviated symbol : M12 ApplicationSwitching Inner circuit(8) (7) (6) (5) Packaging specificati

 0.149. Size:233K  rohm
tt8m1.pdf

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1.5V Drive Nch + Pch MOSFET TT8M1 Structure Dimensions (Unit : mm)Silicon N-channel MOSFET/ TSST8Silicon P-channel MOSFET(8) (7) (6) (5)Features1) Low on-resistance.(1) (2) (3) (4)2) High power package (TSST8).3) Low voltage drive (1.5V drive). Abbreviated symbol :M01 ApplicationSwitching Packaging specifications Inner circuitPackage TapingType

 0.150. Size:952K  rohm
sp8m10fra.pdf

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SP8M10FRASP8M10Transistors AEC-Q101 Qualified4V Drive Nch+Pch MOSFETSP8M10FRASP8M10 Structure Dimensions (Unit : mm)Silicon N-channel / P-channel MOSFET SOP85.01.750.4(8) (5) Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). (1) (4)0.21.271pin mark Application Power switching, DC / DC converter.

 0.151. Size:104K  vishay
sqm110n06-04l.pdf

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SQM110N06-04Lwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) 60 TrenchFET Power MOSFETRDS(on) () at VGS = 10 V 0.0035 Package with Low Thermal ResistanceRDS(on) () at VGS = 4.5 V 0.0050 AEC-Q101 QualifieddID (A) 120 100 % Rg and UIS T

 0.152. Size:90K  vishay
sum110n04-05h.pdf

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SUM110N04-05HVishay SiliconixN-Channel 40-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) Qg (Typ.) 175 C Junction TemperatureRoHS0.0053 at VGS = 10 V 40 95110COMPLIANT High Threshold Voltage at High TemperatureDTO-263GG D STop View SN-Channel MOSFETOrdering Information: SUM110N04-05H-E

 0.153. Size:743K  vishay
sqm120n04-04.pdf

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SQM120N04-04www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.0035 TrenchFET Power MOSFETID (A) 120 Package with Low Thermal ResistanceConfiguration Single AEC-Q101 QualifieddD 100 % Rg and UIS Tested Co

 0.154. Size:159K  vishay
sum18n25-165.pdf

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SUM18N25-165Vishay SiliconixN-Channel 250-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) ID (A)rDS(on) () 175 C Junction TemperatureRoHS0.165 at VGS = 10 V 250 18COMPLIANT Low Thermal Resistance PackageDTO-263GG D STop ViewSOrdering Information: SUM18N25-165-E3 (Lead (Pb)-free) N-Channel MOSFETABSOLU

 0.155. Size:748K  vishay
sqm120n02-1m3l.pdf

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SQM120N02-1m3Lwww.vishay.comVishay SiliconixAutomotive N-Channel 20 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 20DefinitionRDS(on) () at VGS = 10 V 0.0013 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.0017 Package with Low Thermal ResistanceID (A) 120 100 % Rg and UIS TestedConfiguration Sin

 0.156. Size:167K  vishay
sqm120n08-05.pdf

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SQM120N08-05www.vishay.comVishay SiliconixAutomotive N-Channel 75 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 75DefinitionRDS(on) () at VGS = 10 V 0.0048 TrenchFET Power MOSFETID (A) 120 Package with Low Thermal ResistanceConfiguration Single AEC-Q101 QualifieddD 100 % Rg and UIS TestedTO-263

 0.157. Size:79K  vishay
sum110p08-11.pdf

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New ProductSUM110P08-11Vishay SiliconixP-Channel 80-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)b Qg (Typ)RoHS0.0111 at VGS = - 10 V - 110 113 nC- 80COMPLIANTTO-263SGDrain Connected to TabG D STop ViewDOrdering Information: SUM110P08-11 (Lead (Pb)-free) P-Channel MOSFETABSOLUTE MAXIMUM RATINGS TA = 25 C

 0.158. Size:154K  vishay
sum110n04-2m1p.pdf

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New ProductSUM110N04-2m1PVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS0.0021 at VGS = 10 V 110COMPLIANT 40 240 nC0.0024 at VGS = 4.5 V 110APPLICATIONS Synchronous Rectification Power SuppliesDTO-263 GG D S Top View S

 0.159. Size:167K  vishay
sqm110p06-8m9l.pdf

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SQM110P06-8m9Lwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 60 Package with Low Thermal ResistanceRDS(on) () at VGS = - 10 V 0.0089 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.0132 AEC-Q101 QualifieddID (A) - 110 Material categorization:Configuratio

 0.160. Size:168K  vishay
sqm120n06-3m5l.pdf

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SQM120N06-3m5Lwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0035 AEC-Q101 QualifieddRDS(on) () at VGS = 4.5 V 0.0039 100 % Rg and UIS TestedID (A) 120 Material categorization:Configuration Single

 0.161. Size:166K  vishay
sqm100n04-3m5.pdf

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SQM100N04-3m5www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0030 100 % Rg and UIS TestedID (A) 100 AEC-Q101 QualifieddConfiguration Single Material categorization:DFor definitions of compliance ple

 0.162. Size:168K  vishay
sqm100n10-10.pdf

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SQM100N10-10www.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 100 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0105 AEC-Q101 QualifieddRDS(on) () at VGS = 4.5 V 0.0120 100 % Rg and UIS TestedID (A) 100 Material categorization:Configuration Sin

 0.163. Size:168K  vishay
sqm120n03-1m5l.pdf

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SQM120N03-1m5LVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 30DefinitionRDS(on) () at VGS = 10 V 0.0015 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.0020 Package with Low Thermal ResistanceID (A) 120 100 % Rg and UIS TestedConfiguration Single AEC-Q10

 0.164. Size:746K  vishay
sqm120p04-04l.pdf

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SQM120P04-04Lwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 40DefinitionRDS(on) () at VGS = - 10 V 0.0040 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.0060 Package with Low Thermal ResistanceID (A) - 120 AEC-Q101 QualifieddConfiguration

 0.165. Size:168K  vishay
sqm110n04-03.pdf

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SQM110N04-03www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) 40 TrenchFET Power MOSFETRDS(on) () at VGS = 10 V 0.0028 Package with Low Thermal ResistanceID (A) 120 AEC-Q101 qualifieddConfiguration Single 100 % Rg and UIS Tested Compl

 0.166. Size:168K  vishay
sqm110p04-04l.pdf

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SQM110P04-04Lwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 40DefinitionRDS(on) () at VGS = - 10 V 0.0040 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.0060 Package with Low Thermal ResistanceID (A) - 120 AEC-Q101 QualifieddConfiguration

 0.167. Size:76K  vishay
sum110p04-04l.pdf

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SUM110P04-04LVishay SiliconixP-Channel 40-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)dAvailable New Package with Low Thermal Resistance0.0042 at VGS = - 10 V - 110RoHS*- 400.0062 at VGS = - 4.5 V - 110COMPLIANTSTO-263GG D STop ViewOrdering Information: SUM110P04-04LSUM110P04-04L (Lead (Pb

 0.168. Size:703K  vishay
sqm120n04-02l.pdf

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SQM120N04-02Lwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.0023 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.0041 Package with Low Thermal ResistanceID (A) 120 AEC-Q101 QualifieddConfiguration Single

 0.169. Size:101K  vishay
sum110n04-04.pdf

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SUM110N04-04Vishay SiliconixN-Channel 40-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature40 0.0035 at VGS = 10 V 110aRoHS*COMPLIANTTO-263DGG D STop ViewSOrdering Information: SUM110N04-04SUM110N04-04-E3 (Lead (Pb)-free) N-Channel MOSFETABSOLUTE MAXIMUM RA

 0.170. Size:170K  vishay
sqm18n33-160h.pdf

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SQM18N33-160Hwww.vishay.comVishay SiliconixAutomotive N-Channel 330 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 330 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.160 AEC-Q101 QualifiedID (A) 31 100 % Rg and UIS TestedConfiguration Single Material categorization:For definitions of compliance plea

 0.171. Size:155K  vishay
sqm120n04-1m9.pdf

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SQM120N04-1m9www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURES TrenchFET Power MOSFETPRODUCT SUMMARY Package with Low Thermal ResistanceVDS (V) 40 AEC-Q101 QualifieddRDS(on) () at VGS = 10 V 0.0019 100 % Rg and UIS TestedID (A) 120 Material categorization:Configuration SingleFor definitions of compliance please

 0.172. Size:167K  vishay
sum110n06-3m4l.pdf

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SUM110N06-3m4LVishay SiliconixN-Channel 60-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) 100 % Rg TestedRoHS0.0034 at VGS = 10 V COMPLIANT 60110a0.0041 at VGS = 4.5 V DTO-263GG D STop ViewSN-Channel MOSFETOrdering Information: SUM110N06-3m4L-E3 (Lead (Pb)-free)ABSOLUTE MAXIMUM RATINGS

 0.173. Size:168K  vishay
sqm120p06-07l.pdf

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SQM120P06-07Lwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 60 Package with Low Thermal ResistanceRDS(on) () at VGS = - 10 V 0.0067 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.0088 AEC-Q101 QualifieddID (A) - 120 Material categorization:Configurat

 0.174. Size:184K  vishay
sqm120n06-06.pdf

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SQM120N06-06www.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.006 AEC-Q101 qualified dID (A) 120 100 % Rg and UIS testedConfiguration SinglePackage TO-263 Material categorization: for definitions of co

 0.175. Size:169K  vishay
sqm110n06-06.pdf

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SQM110N06-06www.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.006 TrenchFET Power MOSFETID (A) 120 Package with Low Thermal ResistanceConfiguration Single AEC-Q101 QualifieddTO-263 D 100 % Rg and UIS Tested

 0.176. Size:100K  vishay
sum110n04-02l.pdf

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SUM110N04-02LVishay SiliconixN-Channel 40-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A)Available New Package with Low Thermal Resistance 0.0023 at VGS = 10 V RoHS*40110a0.0038 at VGS = 4.5 V COMPLIANTDTO-263 GG D S Top View SOrdering Information: SUM110N04-02LSUM110N04-02L-E3 (Lead (Pb)-fr

 0.177. Size:183K  vishay
sqm100n04-2m7.pdf

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SQM100N04-2m7www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 40 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.0027 100 % Rg and UIS testedID (A) 100 AEC-Q101 qualified dConfiguration SinglePackage TO-263 Material categorization: for definitions of

 0.178. Size:102K  vishay
sqm120n04-1m7l.pdf

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SQM120N04-1m7Lwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0017 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.0020 AEC-Q101 QualifieddID (A) 120 Material categorization:Configuration Sin

 0.179. Size:93K  vishay
sum110p06-08l.pdf

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SUM110P06-08LVishay SiliconixP-Channel 60-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)dAvailable Package with Low Thermal Resistance0.008 at VGS = - 10 V RoHS*- 60 - 110 100 % Rg Tested0.0105 at VGS = - 4.5 V COMPLIANTSTO-263GG D STop ViewDOrdering Information: SUM110P06-08LSUM110P06-08L-E

 0.180. Size:76K  vishay
sum110n06-3m9h.pdf

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SUM110N06-3m9HVishay SiliconixN-Channel 60-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) Qg (Typ) 175 C Junction TemperatureRoHS0.0039 at VGS = 10 V 60110a 200COMPLIANT Low Thermal Resistance Package High Threshold Voltage At High Temperature 100 % Rg TestedDTO-263GG D STop Vi

 0.181. Size:111K  vishay
sum110p08-11l sum110p08.pdf

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New ProductSUM110P08-11LVishay SiliconixP-Channel 80-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)b Qg (Typ)RoHS0.0112 at VGS = - 10 V - 110COMPLIANT- 80 85 nC0.0145 at VGS = - 4.5 V - 109TO-263SGDrain Connected to TabG D STop ViewDOrdering Information: SUM110P08-11L-E3 (Lead (Pb)-free) P-Channel MOSFETA

 0.182. Size:167K  vishay
sqm110n08-05.pdf

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SQM110N08-05www.vishay.comVishay SiliconixAutomotive N-Channel 75 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) 75 TrenchFET Power MOSFETRDS(on) () at VGS = 10 V 0.0048 Package with Low Thermal ResistanceID (A) 120 AEC-Q101 QualifieddConfiguration Single 100 % Rg and UIS TestedDTO-263

 0.183. Size:134K  vishay
sqm200n04-1m1l.pdf

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SQM200N04-1m1Lwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0011 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.0013 AEC-Q101 QualifieddID (A) 200 Material categorization:Configuration Sin

 0.184. Size:164K  vishay
sum110n10-09.pdf

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SUM110N10-09Vishay SiliconixN-Channel 100 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) New Package with Low Thermal Resistance 100 0.0095 at VGS = 10 V 110a 100 % Rg TestedDTO-263 GG D S Top View SOrdering Information: SUM110N10-09-E3 (Lead (Pb)-free) N-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC =

 0.185. Size:168K  vishay
sqm110n04-04.pdf

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SQM110N04-04www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) 40 TrenchFET Power MOSFETRDS(on) () at VGS = 10 V 0.0035 Package with Low Thermal ResistanceID (A) 120 AEC-Q101 QualifieddConfiguration Single 100 % Rg and UIS TestedD Co

 0.186. Size:169K  vishay
sqm120n04-2m1.pdf

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SQM120N04-2m1www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0021 100 % Rg and UIS TestedID (A) 120 AEC-Q101 QualifieddConfiguration Single Material categorization:DFor definitions of compliance

 0.187. Size:168K  vishay
sqm110n04-03l.pdf

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SQM110N04-03Lwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.0035 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.0053 Package with Low Thermal ResistanceID (A) 120 AEC-Q101 QualifieddConfiguration Single

 0.188. Size:99K  vishay
sum110n04-03p.pdf

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SUM110N04-03PVishay SiliconixN-Channel 40-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.0031 at VGS = 10 V 40110aRoHS* Package with Low Thermal ResistanceCOMPLIANT Extremely Low Qgd WFETTM Technology for Low Switching Losses 100 % Rg TestedDTO

 0.189. Size:178K  vishay
sup50n03-5m1p.pdf

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SUP50N03-5m1PVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.0051 at VGS = 10 V50d TrenchFET Power MOSFET30 21.70.0063 at VGS = 4.5 V50d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Supply- Seco

 0.190. Size:167K  vishay
sqm110n10-09.pdf

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SQM110N10-09www.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) 100 TrenchFET Power MOSFETRDS(on) () at VGS = 10 V 0.0095 Package with Low Thermal ResistanceID (A) 120 AEC-Q101 QualifieddConfiguration Single 100 % Rg and UIS TestedD

 0.191. Size:168K  vishay
sqm110p06-07l.pdf

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SQM110P06-07Lwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 60 Package with Low Thermal ResistanceRDS(on) () at VGS = - 10 V 0.0067 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.0088 AEC-Q101 QualifieddID (A) - 120 Material categorization:For definitio

 0.192. Size:165K  vishay
sum110n05-06l.pdf

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SUM110N05-06LVishay SiliconixN-Channel 55-V (D-S), 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) Qg (Typ)Available 175 C Junction Temperature0.006 at VGS = 10 V 110RoHS*55 65 Low Thermal Resistance Package0.0085 at VGS = 4.5 V 92 COMPLIANTAPPLICATIONS IndustrialDTO-263GG D STop ViewS

 0.193. Size:161K  vishay
sqm120n10-3m8.pdf

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SQM120N10-3m8www.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 100 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0038 AEC-Q101 QualifieddID (A) 120 100 % Rg and UIS TestedConfiguration Single Material categorization:DFor definitions of compliance p

 0.194. Size:715K  vishay
sqm120n04-03l.pdf

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SQM120N04-03Lwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.0035 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.0053 Package with Low Thermal ResistanceID (A) 120 AEC-Q101 QualifieddConfiguration Single

 0.195. Size:151K  vishay
sum110n04-2m3l.pdf

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SUM110N04-2m3LVishay SiliconixN-Channel 40-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) 100 % Rg TestedRoHS0.0023 at VGS = 10 V COMPLIANT 40110a0.003 at VGS = 4.5 V DTO-263GG D STop ViewSN-Channel MOSFETOrdering Information: SUM110N04-2m3L-E3 (Lead (Pb)-free)ABSOLUTE MAXIMUM RATINGS T

 0.196. Size:166K  vishay
sqm120n04-1m8.pdf

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SQM120N04-1m8Vishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.0018 TrenchFET Power MOSFETID (A) 120 Package with Low Thermal ResistanceConfiguration Single AEC-Q101 QualifieddD 100 % Rg and UIS Tested Compliant to RoHS

 0.197. Size:756K  vishay
sqm120n10-09.pdf

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SQM120N10-09www.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100DefinitionRDS(on) () at VGS = 10 V 0.0095 TrenchFET Power MOSFETID (A) 120 Package with Low Thermal ResistanceConfiguration Single AEC-Q101 QualifieddD 100 % Rg and UIS Tested

 0.198. Size:95K  vishay
sum110n04-03.pdf

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SUM110N04-03Vishay SiliconixN-Channel 40-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A)Available Package with Low Thermal Resistance0.0028 at VGS = 10 V40110aRoHS*COMPLIANTDTO-263GG D STop ViewSOrdering Information: SUM110N04-03SUM110N04-03-E3 (Lead (Pb)-free)N-Channel MOSFETABSOLUTE MA

 0.199. Size:750K  vishay
sqm120n06-04l.pdf

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SQM120N06-04Lwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.0035 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.0050 Package with Low Thermal ResistanceID (A) 120 AEC-Q101 QualifieddConfiguration Single

 0.200. Size:173K  vishay
sqm50n04-4m1.pdf

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SQM50N04-4m1www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0041 AEC-Q101 QualifieddID (A) 50 100 % Rg and UIS TestedConfiguration Single Material categorization:For definitions of compliance please s

 0.201. Size:173K  vishay
sum120n04-1m7l.pdf

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SUM120N04-1m7Lwww.vishay.comVishay SiliconixN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) d Qg (TYP.) 100 % Rg and UIS tested0.0017 at VGS = 10 V 12040 190 Material categorization: 0.0020 at VGS = 4.5 V 120For definitions of compliance please see www.vishay.com/doc?99912 TO-263DAPPLICATIONS

 0.202. Size:767K  vishay
sqm120n04-03.pdf

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SQM120N04-03www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.0028 TrenchFET Power MOSFETID (A) 120 Package with Low Thermal ResistanceConfiguration Single AEC-Q101 qualifiedd 100 % Rg and UIS TestedD Co

 0.203. Size:69K  vishay
sum110n03-03p.pdf

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SUM110N03-03PVishay SiliconixN-Channel 30-V (D-S) 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETD 175_C Junction TemperatureV(BR)DSS (V) rDS(on) (W) ID (A)aD Optimized for Low-Side Synchronous Rectifier0.0026 @ VGS = 10 V 110aD 100% Rg Tested30300.004 @ VGS = 4.5 V 110aAPPLICATIONSD Desktop or Server CPU CoreDTO-263DRAIN connected to TABGG D

 0.204. Size:168K  vishay
sqm110n04-02l.pdf

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SQM110N04-02Lwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) 40 TrenchFET Power MOSFETRDS(on) () at VGS = 10 V 0.0023 Package with Low Thermal ResistanceRDS(on) () at VGS = 4.5 V 0.0041 AEC-Q101 QualifieddID (A) 120 100 % Rg and UIS T

 0.205. Size:173K  vishay
sum110p06-07l.pdf

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SUM110P06-07Lwww.vishay.comVishay SiliconixP-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) ()ID (A) d Package with low thermal resistance0.0069 at VGS = -10 V -60 -110 Material categorization: 0.0088 at VGS = -4.5 V for definitions of compliance please see www.vishay.com/doc?99912 STO-263GSSP-C

 0.206. Size:134K  vishay
sum110p08-11l.pdf

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SUM110P08-11LVishay SiliconixP-Channel 80 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)b Qg (Typ) Material categorization:For definitions of compliance please see0.0112 at VGS = - 10 V - 110- 80 85 nCwww.vishay.com/doc?999120.0145 at VGS = - 4.5 V - 109TO-263SGDrain Connected to TabG D STop ViewDOrder

 0.207. Size:165K  vishay
sqm110n04.pdf

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SQM110N04-04Vishay SiliconixAutomotiveN-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.0035 TrenchFET Power MOSFETID (A) 120 Package with Low Thermal ResistanceConfiguration Single AEC-Q101 QualifieddD Compliant to RoHS Directive 2002/95/ECTO-263

 0.208. Size:74K  vishay
sum110n03-04p.pdf

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SUM110N03-04PNew ProductVishay SiliconixN-Channel 30-V (D-S) 175_C MOSFETFEATURESD TrenchFETr Power MOSFETD 175_C Junction TemperaturePRODUCT SUMMARYD Optimized for Low-Side Synchronous Rectifier OperationD New Package with Low Thermal ResistanceV(BR)DSS (V) rDS(on) (W) ID (A)D 100% Rg Tested0.0042 @ VGS = 10 V 11030300.0065 @ VGS = 4.5 V 77 APPLICATIONSD DC/DC C

 0.209. Size:168K  vishay
sqm120n04-1m7.pdf

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SQM120N04-1m7www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURES TrenchFET Power MOSFETPRODUCT SUMMARY Package with Low Thermal ResistanceVDS (V) 40 AEC-Q101 QualifieddRDS(on) () at VGS = 10 V 0.0017 100 % Rg and UIS TestedID (A) 120 Material categorization:Configuration SingleFor definitions of compliance please

 0.210. Size:710K  vishay
sqm110n05-06l.pdf

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SQM110N05-06Lwww.vishay.comVishay SiliconixAutomotive N-Channel 55 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 55DefinitionRDS(on) () at VGS = 10 V 0.006 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.010 Package with Low Thermal ResistanceID (A) 110 AEC-Q101 QualifiedcConfiguration Single

 0.211. Size:166K  vishay
sum110p04-05.pdf

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SUM110P04-05Vishay SiliconixP-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)a Qg (Typ.)RoHS0.005 at VGS = - 10 V - 110 185 nC- 40COMPLIANTTO-263SGDrain Connected to TabG D STop ViewDOrdering Information: SUM110P04-05-E3 (Lead (Pb)-free) P-Channel MOSFETABSOLUTE MAXIMUM RATINGS TA = 25 C, unless o

 0.212. Size:165K  vishay
sum110n08-07p.pdf

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SUM110N08-07PVishay SiliconixN-Channel 75 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSVDS (V) RDS(on) () ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.007 at VGS = 10 V75 Material categorization:110d 69For definitions of compliance please seewww.vishay.com/doc?99912TO-263 APPLICATIONS Synchronous RectificationDGDG STop Vie

 0.213. Size:170K  vishay
sqd50n04-4m1.pdf

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SQD50N04-4m1www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0041 AEC-Q101 QualifieddID (A) 50 100 % Rg and UIS TestedConfiguration Single Material categorization:For definitions of compliance please s

 0.214. Size:935K  central
czdm1003n.pdf

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CZDM1003NSURFACE MOUNT SILICONwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CZDM1003N is aMOSFET3.0 Amp, 100 Volt silicon N-Channel enhancement-mode MOSFET, designed for motor control and relay driver applications. This MOSFET offers high current, low rDS(ON), and low gate charge.MARKING: FULL PART NUMBERSOT-223 CASEFEATURES:APPL

 0.215. Size:492K  central
cmkt5089m10.pdf

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CMKT5089M10www.centralsemi.comSURFACE MOUNTDUAL NPN SILICONDESCRIPTION:MATCHED hFE TRANSISTORSThe CENTRAL SEMICONDUCTOR CMKT5089M10 consists of two (2) individually isolated 5089NPN silicon transistors with matched hFE. This ULTRAmini device is manufactured by the epitaxial planar process and epoxy molded in an SOT-363 surface mount package. The CMKT5089M10 has been d

 0.216. Size:844K  central
cxdm1002n.pdf

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CXDM1002NSURFACE MOUNT SILICONwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CXDM1002N is MOSFETa high voltage silicon N-Channel enhancement-mode MOSFET designed for high speed pulsed amplifier and driver applications. This MOSFET offers high voltage, low rDS(ON), low threshold voltage, and low leakage current.MARKING: FULL PART NUMBE

 0.217. Size:532K  infineon
igcm15f60ga.pdf

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D a t a S h e e t , Aug. 2010 Control Integrated POwer System (CIPOS) IGCM1 5F60G A http://www.lspst.com F o r P o w e r M a n a g e m e n t A p p l i c a t i o n CIPOS IGCM15F60GA Revision History: 2010-08 Ver.1.1 Previous Version: Datasheet Ver. 1.0 Page Subjects (major changes since last revision) 11 tFLTCLR Authors: Junho Song, Junbae Lee and Daewoong Chung

 0.218. Size:1469K  infineon
imw65r048m1h.pdf

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IMW65R048M1HMOSFETPG-TO 247-3650 V CoolSiC M1 SiC Trench Power DeviceThe 650 V CoolSiC is built over the solid silicon carbide technologydeveloped in Infineon in more than 20 years. Leveraging the wide bandgapTabSiC material characteristics, the 650V CoolSiC MOSFET offers a uniquecombination of performance, reliability and ease of use. Suitable for hightemperature and

 0.219. Size:1224K  infineon
imz120r090m1h.pdf

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IMZ120R090M1H IMZ120R090M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Drainpin 1 Very low switching losses Gate Threshold-free on state characteristic pin 4 Benchmark gate threshold voltage, V = 4.5V GS(th)Sense Source 0V turn-off gate voltage for easy and simple gate drive pin 3 pin 2 Fully controllable dV/dt Robust

 0.220. Size:1223K  infineon
imz120r140m1h.pdf

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IMZ120R140M1H IMZ120R140M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Drainpin 1 Very low switching losses Gate Threshold-free on state characteristic pin 4 Benchmark gate threshold voltage, V = 4.5V GS(th)Sense Source 0V turn-off gate voltage for easy and simple gate drive pin 3 pin 2 Fully controllable dV/dt Robust

 0.221. Size:1124K  infineon
imw120r060m1h.pdf

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IMW120R060M1H IMW120R060M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drainpin 2Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control

 0.222. Size:434K  infineon
ff45mr12w1m1 b11.pdf

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FF45MR12W1M1_B11EasyDUAL Modul mit CoolSiC Trench MOSFET und PressFIT / NTCEasyDUAL module with CoolSiC Trench MOSFET and PressFIT / NTCVorlufige Daten / Preliminary DataJV = 1200VDSSI = 25A / I = 50AD nom DRMPotentielle Anwendungen Potential Applications Anwendungen mit hohen Schaltfrequenzen High Frequency Switching application DC/DC Wandler DC/DC c

 0.223. Size:1468K  infineon
imza65r072m1h.pdf

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IMZA65R072M1HMOSFETPG-TO 247-4-3650 V CoolSiC M1 SiC Trench Power DeviceThe 650 V CoolSiC is built over the solid silicon carbide technologydeveloped in Infineon in more than 20 years. Leveraging the wide bandgapTabSiC material characteristics, the 650V CoolSiC MOSFET offers a uniquecombination of performance, reliability and ease of use. Suitable for hightemperature a

 0.224. Size:1483K  infineon
imza65r048m1h.pdf

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IMZA65R048M1HMOSFETPG-TO 247-4-3650 V CoolSiC M1 SiC Trench Power DeviceThe 650 V CoolSiC is built over the solid silicon carbide technologydeveloped in Infineon in more than 20 years. Leveraging the wide bandgapTabSiC material characteristics, the 650V CoolSiC MOSFET offers a uniquecombination of performance, reliability and ease of use. Suitable for hightemperature a

 0.225. Size:1125K  infineon
imw120r090m1h.pdf

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IMW120R090M1H IMW120R090M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drainpin 2Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control

 0.226. Size:125K  infineon
bsm150gb60dlc.pdf

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Technische Information / Technical InformationIGBT-ModuleBSM 150 GB 60 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 600 Vcollector-emitter voltageTc= 60C IC,nom. 150 AKollektor-DauergleichstromDC-collector currentTc= 25C IC 180 APeriodischer Kollektor Spitzenstrom

 0.227. Size:1317K  infineon
imz120r350m1h.pdf

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IMZ120R350M1H IMZ120R350M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Drainpin 1 Very low switching losses Gate Threshold-free on state characteristic pin 4 Benchmark gate threshold voltage, V = 4.5V GS(th)Sense Source 0V turn-off gate voltage for easy and simple gate drive pin 3 pin 2 Fully controllable dV/dt Robust

 0.228. Size:1223K  infineon
imz120r060m1h.pdf

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IMZ120R060M1H IMZ120R060M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Drainpin 1 Very low switching losses Gate Threshold-free on state characteristic pin 4 Benchmark gate threshold voltage, V = 4.5V GS(th)Sense Source 0V turn-off gate voltage for easy and simple gate drive pin 3 pin 2 Fully controllable dV/dt Robust

 0.229. Size:1365K  infineon
aimw120r045m1.pdf

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AIMW120R045M1 AIMW120R045M1 CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Revolutionary semiconductor material - Silicon Carbide Very low switching losses Threshold-free on state characteristic IGBT-compatible driving voltage (15V for turn-on) 0V turn-off gate voltage Benchmark gate threshold voltage, V =4.5V GS(th) Fully c

 0.230. Size:532K  infineon
igcm10f60ga.pdf

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D a t a S h e e t , Aug. 2010 Control Integrated POwer System (CIPOS) IGCM10F60G A http://www.lspst.com F o r P o w e r M a n a g e m e n t A p p l i c a t i o n CIPOS IGCM10F60GA Revision History: 2010-08 Ver.1.1 Previous Version: Datasheet Ver. 1.0 Page Subjects (major changes since last revision) 11 tFLTCLR Authors: Junho Song, Junbae Lee and Daewoong Chung E

 0.231. Size:1124K  infineon
imw120r220m1h.pdf

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IMW120R220M1H IMW120R220M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drainpin 2Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control

 0.232. Size:1459K  infineon
imw65r027m1h.pdf

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IMW65R027M1HMOSFETPG-TO 247-3650 V CoolSiC M1 SiC Trench Power DeviceThe 650 V CoolSiC is built over the solid silicon carbide technologydeveloped in Infineon in more than 20 years. Leveraging the wide bandgapTabSiC material characteristics, the 650V CoolSiC MOSFET offers a uniquecombination of performance, reliability and ease of use. Suitable for hightemperature and

 0.233. Size:1123K  infineon
imw120r140m1h.pdf

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IMW120R140M1H IMW120R140M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drainpin 2Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control

 0.234. Size:518K  infineon
df23mr12w1m1p b11.pdf

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DF23MR12W1M1P_B11EasyPACK Modul mit CoolSiC Trench MOSFET und PressFIT / NTC / TIMEasyPACK module with CoolSiC Trench MOSFET and PressFIT / NTC / TIMVorlufige Daten / Preliminary Data V = 1200VDSSI = 25A / I = 50AD nom DRMPotentielle Anwendungen Potential Applications Solar Anwendungen Solar applicationsElektrische Eigenschaften Electrical Features

 0.235. Size:1218K  infineon
imw120r350m1h.pdf

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IMW120R350M1H IMW120R350M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drainpin 2Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control

 0.236. Size:523K  infineon
igcm10f60ha.pdf

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D a t a S h e e t , Aug. 2010 Control Integrated POwer System (CIPOS) IGCM10F60HA http://www.lspst.com F o r P o w e r M a n a g e m e n t A p p l i c a t i o n CIPOS IGCM10F60HA Revision History: 2010-08 Ver.1.1 Previous Version: Datasheet Ver. 1.0 Page Subjects (major changes since last revision) 11 tFLTCLR Authors: Junho Song, Junbae Lee and Daewoong Chung Ed

 0.237. Size:1126K  infineon
imw120r030m1h.pdf

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IMW120R030M1H IMW120R030M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drainpin 2Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control

 0.238. Size:512K  infineon
df11mr12w1m1p b11.pdf

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DF11MR12W1M1P_B11EasyPACK Modul mit CoolSiC Trench MOSFET und PressFIT / NTC / TIMEasyPACK module with CoolSiC Trench MOSFET and PressFIT / NTC / TIMVorlufige Daten / Preliminary Data V = 1200VDSSI = 50A / I = 100AD nom DRMPotentielle Anwendungen Potential Applications Solar Anwendungen Solar applicationsElektrische Eigenschaften Electrical Features

 0.239. Size:547K  infineon
f3l15mr12w2m1 b69.pdf

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F3L15MR12W2M1_B69EasyPACK Modul mit CoolSiC Trench MOSFET und PressFIT / NTCEasyPACK module with CoolSiC Trench MOSFET and PressFIT / NTCVorlufige Daten / Preliminary DataJV = 1200VDSSI = 75A / I = 150AD nom DRMPotentielle Anwendungen Potential Applications Anwendungen mit hohen Schaltfrequenzen High Frequency Switching application DC/DC Wandler

 0.240. Size:1478K  infineon
imza65r027m1h.pdf

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IMZA65R027M1HMOSFETPG-TO 247-4-3650 V CoolSiC M1 SiC Trench Power DeviceThe 650 V CoolSiC is built over the solid silicon carbide technologydeveloped in Infineon in more than 20 years. Leveraging the wide bandgapTabSiC material characteristics, the 650V CoolSiC MOSFET offers a uniquecombination of performance, reliability and ease of use. Suitable for hightemperature a

 0.241. Size:242K  infineon
bsm100gb120dlc.pdf

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Technische Information / technical informationIGBT-ModuleBSM100GB120DLCIGBT-modules62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emitter voltageKollektor-Dauergleichstro

 0.242. Size:1393K  infineon
imw120r045m1.pdf

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IMW120R045M1 IMW120R045M1 CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET DrainFeatures pin 2 Very low switching losses Gate Threshold-free on state characteristic pin 1 Wide gate-source voltage range Sourcepin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage Fully controllable dV/dt Commutation robus

 0.243. Size:1224K  infineon
imz120r220m1h.pdf

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IMZ120R220M1H IMZ120R220M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Drainpin 1 Very low switching losses Gate Threshold-free on state characteristic pin 4 Benchmark gate threshold voltage, V = 4.5V GS(th)Sense Source 0V turn-off gate voltage for easy and simple gate drive pin 3 pin 2 Fully controllable dV/dt Robust

 0.244. Size:1457K  infineon
imw65r107m1h.pdf

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IMW65R107M1HMOSFETPG-TO 247-3650 V CoolSiC M1 SiC Trench Power DeviceThe 650 V CoolSiC is built over the solid silicon carbide technologydeveloped in Infineon in more than 20 years. Leveraging the wide bandgapTabSiC material characteristics, the 650V CoolSiC MOSFET offers a uniquecombination of performance, reliability and ease of use. Suitable for hightemperature and

 0.245. Size:1225K  infineon
imz120r030m1h.pdf

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IMZ120R030M1H IMZ120R030M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Drainpin 1 Very low switching losses Gate Threshold-free on state characteristic pin 4 Benchmark gate threshold voltage, V = 4.5V GS(th)Sense Source 0V turn-off gate voltage for easy and simple gate drive pin 3 pin 2 Fully controllable dV/dt Robust

 0.246. Size:243K  infineon
bsm150gb120dlc.pdf

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Technische Information / technical informationIGBT-ModuleBSM150GB120DLCIGBT-modules62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emitter voltageKollektor-Dauergleichstro

 0.247. Size:1453K  infineon
imw65r072m1h.pdf

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IMW65R072M1HMOSFETPG-TO 247-3650 V CoolSiC M1 SiC Trench Power DeviceThe 650 V CoolSiC is built over the solid silicon carbide technologydeveloped in Infineon in more than 20 years. Leveraging the wide bandgapTabSiC material characteristics, the 650V CoolSiC MOSFET offers a uniquecombination of performance, reliability and ease of use. Suitable for hightemperature and

 0.248. Size:288K  ixys
gwm180-004x2-smd.pdf

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GWM 180-004X2VDSS = 40 VThree phase full BridgeID25 = 180 Awith Trench MOSFETsRDSon typ. = 1.9 mWin DCB isolated high current packageL+Preliminary dataG3 G5G1S3 S5S1L1L2L3Straight leads Surface Mount DeviceG4 G6G2S4S6S2L-ApplicationsMOSFETsAC drivesSymbol Conditions Maximum Ratings in automobilesVDSS TJ = 25C to 150C 40 V - electr

 0.249. Size:105K  ixys
ixth10n100 ixtm10n100 ixth12n100 ixtm12n100.pdf

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VDSS ID25 RDS(on)MegaMOSTMFET IXTH / IXTM 10N100 1000 V 10 A 1.20 IXTH / IXTM 12N100 1000 V 12 A 1.05 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C 10N

 0.250. Size:76K  ixys
fmd15-06kc5 fdm15-06kc5.pdf

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FMD 15-06KC5Advanced Technical InformationFDM 15-06KC5ID25 = 15 ACoolMOS 1) Power MOSFETVDSS = 600 Vwith HiPerDyn FREDRDS(on) max = 0.165 Buck and Boost Topologies3 3ISOPLUS i4Electrically isolated back surfaceT2500 V electrical isolation5DN-Channel Enhancement Mode144Low RDSon, high VDSS MOSFET isolated backE72873 5Ultra low gate char

 0.251. Size:316K  ixys
ixth15n60 ixtm15n60 ixth20n60 ixtm20n60.pdf

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Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine

 0.252. Size:182K  ixys
gwm100-0085x1-smd.pdf

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GWM100-0085X1VDSS = 85 VThree phase full BridgeID25 = 103 Awith Trench MOSFETsRDSon typ. = 5.5 mWin DCB isolated high current packageL+G3 G5G1S3 S5S1L1L2L3Straight leads Surface Mount DeviceG4 G6G2S4S6S2L-ApplicationsMOSFETsAC drivesSymbol Conditions Maximum Ratings in automobilesVDSS TJ = 25C to 150C 85 V - electric power steering

 0.254. Size:98K  ixys
ixth11n80 ixtm11n80 ixth13n80 ixtm13n80.pdf

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VDSS ID25 RDS(on)IXTH / IXTM 11N80 800 V 11 A 0.95 MegaMOSTMFETIXTH / IXTM 13N80 800 V 13 A 0.80 N-Channel Enhancement ModeTO-247 AD (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VD (TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C 11N80 11

 0.255. Size:62K  ixys
ixth12n50a ixtm12n50a.pdf

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VDSS ID25 RDS(on)StandardIXTH 12 N50A 500 V 12 A 0.4 Power MOSFETIXTM 12 N50A 500 V 12 A 0.4 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VD (TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C12 AIDM TC

 0.256. Size:176K  ixys
fmm110-015x2f.pdf

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Advance Technical InformationTrenchT2TM HiperFET VDSS = 150VFMM110-015X2FN-Channel Power ID25 = 53A MOSFET RDS(on) 20m 33T1trr(typ) = 85ns5544T211Phase Leg TopologyISOPLUS i4-PakTM22Symbol Test Conditions Maximum RatingsTJ -55 ... +175 C 1TJM 175 CIsolated TabTstg -55 ... +175 C5VISOLD 50/60HZ, RMS, t

 0.257. Size:570K  ixys
ixfh10n100 ixfm10n100 ixfh12n100 ixfm12n100.pdf

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VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM 10 N100 1000 V 10 A 1.20 Power MOSFETsIXFH/IXFM 12 N100 1000 V 12 A 1.05 N-Channel Enhancement Mode 250 ns High dv/dt, Low trr, HDMOSTM Family trr Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M

 0.258. Size:48K  ixys
ixgm17n100.pdf

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VCES IC25 VCE(sat)Low VCE(sat) IGBT IXGH/IXGM 17 N100 1000 V 34 A 3.5 VHigh speed IGBT IXGH/IXGM 17 N100A 1000 V 34 A 4.0 VSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 M 1000 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C34 AIC90 TC = 90C17 A TO-204 AE (IXGM)ICM TC = 25C

 0.259. Size:290K  ixys
gwm100-01x1-smd.pdf

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GWM 100-01X1VDSS = 100 VThree phase full BridgeID25 = 90 Awith Trench MOSFETsRDSon typ. = 7.5 mWin DCB isolated high current packageL+G3 G5G1S3 S5S1L1L2L3Straight leads Surface Mount DeviceG4 G6G2S4S6S2L-ApplicationsMOSFETsAC drivesSymbol Conditions Maximum Ratings in automobilesVDSS TJ = 25C to 150C 100 V - electric power steering

 0.260. Size:179K  ixys
ixfh10n90 ixfm10n90 ixfh12n90 ixfm12n90 ixfh13n90 ixfm13n90.pdf

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VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM 10 N90 900 V 10 A 1.1 Power MOSFETsIXFH/IXFM 12 N90 900 V 12 A 0.9 IXFH/IXFT 13 N90 900 V 13 A 0.8 N-Channel Enhancement Mode 250 ns High dv/dt, Low trr, HDMOSTM Family trr TO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 1

 0.261. Size:48K  ixys
ixgm17n100a.pdf

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VCES IC25 VCE(sat)Low VCE(sat) IGBT IXGH/IXGM 17 N100 1000 V 34 A 3.5 VHigh speed IGBT IXGH/IXGM 17 N100A 1000 V 34 A 4.0 VSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 M 1000 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C34 AIC90 TC = 90C17 A TO-204 AE (IXGM)ICM TC = 25C

 0.262. Size:82K  ixys
ixfh15n60 ixfh20n60 ixfm15n60 ixfm20n60.pdf

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VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM 15 N60 600 V 15 A 0.50 WPower MOSFETsIXFH/IXFM 20 N60 600 V 20 A 0.35 Wtrr 250 nsN-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 MW 600 V(TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 2

 0.263. Size:82K  ixys
ixfh13n50 ixfm13n50.pdf

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HiPerFETTM IXFH 13 N50 VDSS = 500 VPower MOSFETs IXFM 13 N50 ID (cont) = 13 ARDS(on) = 0.4 WN-Channel Enhancement Modetrr 250 nsHigh dv/dt, Low trr, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 MW 500 V(TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C13 ATO-204 AA

 0.264. Size:206K  ixys
vmm1500-0075x2.pdf

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VMM 1500-0075X2VDSS = 75 VDual PowerID25 = 1560 AMOSFET ModuleRDS(on) = 0.38 mPhaseleg Configuration113103291889 111102FeaturesMOSFET T1 + T2 Trench MOSFETsSymbol Conditions Maximum Ratings - low RDSonVDSS TVJ = 25C to 150C 75 V - optimized intrinsic reverse diodeVGS 20 V package - low inductive current pathID25 TC = 2

 0.265. Size:80K  ixys
fdm100-0045sp.pdf

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FDM 100-0045SPID25 = 100 ABuck ChopperVDSS = 55 Vwith Trench Power MOSFETRDSon typ. = 5.7 mand Schottky Diodein ISOPLUS i4-PACTM3Preliminary data54125Features MOSFET trench MOSFETSymbol Conditions Maximum Ratings - very low on state resistance RDSon- fast switchingVDSS TVJ = 25C to 150C 55 V Schottky diode- low forward

 0.268. Size:292K  ixys
gwm120-0075x1-smd.pdf

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GWM 120-0075X1VDSS = 75 VThree phase full BridgeID25 = 110 Awith Trench MOSFETsRDSon typ. = 4.0 mWin DCB isolated high current packageL+G3 G5G1S3 S5S1L1L2L3Straight leads Surface Mount DeviceG4 G6G2S4S6S2L-ApplicationsMOSFETsAC drivesSymbol Conditions Maximum Ratings in automobilesVDSS TVJ = 25C to 150C 75 V - electric power steerin

 0.269. Size:291K  ixys
gwm160-0055x1-smd.pdf

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GWM 160-0055X1VDSS = 55 VThree phase full BridgeID25 = 150 Awith Trench MOSFETsRDSon typ. = 2.7 mWin DCB isolated high current packageL+G3 G5G1S3 S5S1L1L2L3Straight leads Surface Mount DeviceG4 G6G2S4S6S2L-ApplicationsMOSFETsAC drivesSymbol Conditions Maximum Ratings in automobilesVDSS TJ = 25C to 150C 55 V - electric power steering

 0.270. Size:197K  ixys
gwm100-0085x1-sl.pdf

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GWM100-0085X1VDSS = 85 VThree phase full BridgeID25 = 103 Awith Trench MOSFETsRDSon typ. = 5.5 mWin DCB isolated high current packageL+G3 G5G1S3 S5S1L1L2L3Straight leads Surface Mount DeviceG4 G6G2S4S6S2L-ApplicationsMOSFETsAC drivesSymbol Conditions Maximum Ratings in automobilesVDSS TJ = 25C to 150C 85 V - electric power steering

 0.271. Size:95K  ixys
ixfh11n80 ixfh13n80 ixfm11n80 ixfm13n80.pdf

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VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM 11 N80 800 V 11 A 0.95 WPower MOSFETsIXFH/IXFM 13 N80 800 V 13 A 0.80 Wtrr 250 nsN-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 MW 800 VVGS Continuous 20 V(TAB)VGSM Transient 30 VID25 TC = 2

 0.273. Size:179K  ixys
fmm150-0075x2f.pdf

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Advance Technical InformationTrenchT2TM HiperFET VDSS = 75VFMM150-0075X2FN-Channel Power ID25 = 120A MOSFET RDS(on) 5.8m 33T1trr(typ) = 66ns5544T211Phase Leg TopologyISOPLUS i4-PakTM22Symbol Test Conditions Maximum RatingsTJ -55 ... +175 C 1TJM 175 CIsolated TabTstg -55 ... +175 C5VISOL 50/60HZ, RMS, t

 0.274. Size:38K  omnirel
om120l60sb.pdf

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OM120L60SB OM90L120SBPreliminary Data SheetOM100F60SB OM70F120SBIGBTS IN HERMETIC ISOLATED POWERBLOCK PACKAGESHigh Current, High Voltage 600V And 1200V,Up To 150 Amp IGBTs With FRED DiodesFEATURES Includes Internal FRED Diode Rugged Package Design Solder Terminals Very Low Saturation Voltage Fast Switching, Low Drive Current Available Screened To MIL-

 0.275. Size:42K  omnirel
om150f120cmd.pdf

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205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.comELECTRICAL CHARACTERISTICS: OM150F120CMD (Tc= 25C unless otherwise specified)Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICSCollector Emitter Breakdown Voltage, VCE=0V VCES 1200 VZero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 2AGate Emitter Leakage Current, VGE=+/-15

 0.276. Size:41K  omnirel
om150f120cmc.pdf

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205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.comELECTRICAL CHARACTERISTICS: OM150F120CMC (Tc= 25C unless otherwise specified)Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICSCollector Emitter Breakdown Voltage, VCE=0V VCES 1200 VZero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 2AGate Emitter Leakage Current, VGE=+/-15

 0.277. Size:30K  omnirel
om11n60sa.pdf

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OM11N60SAOM11N55SAPOWER MOSFET IN HERMETIC ISOLATEDTO-254AA PACKAGE600V & 550V, 11 Amp, N-ChannelMOSFET In Hermetic Metal PackageFEATURES Isolated Hermetic Metal Package Fast Switching Low RDS(on) Available Screened To MIL-S-19500, TX, TXV And S Ceramic Feedthroughs Also AvailableDESCRIPTIONThis series of hermetically packaged products feature the latest

 0.278. Size:42K  omnirel
om150l120cmd.pdf

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205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.comELECTRICAL CHARACTERISTICS: OM150L120CMD (Tc= 25C unless otherwise specified)Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICSCollector Emitter Breakdown Voltage, VCE=0V VCES 1200 VZero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 2AGate Emitter Leakage Current, VGE=+/-15

 0.279. Size:36K  omnirel
om150l120cma.pdf

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205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246,www.omnirel.comELECTRICAL CHARACTERISTICS: OM150L120CMA (Tc= 25C unless otherwise specified)Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICSCollector Emitter Breakdown Voltage, VCE=0V VCES 1200 VZero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 2AGate Emitter Leakage Current, VGE=+/-15V

 0.280. Size:19K  omnirel
om130stc.pdf

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OM130STCRADIATION HARDENED POWER MOSFETSIN HERMETIC ISOLATED PACKAGE N-CHANNEL100V, 10 Amp, N-Channel, Radiation HardenedPower MOSFET In A Hermetic Metal PackageFEATURES Rated As Radiation Hard Avalanche Energy Rated Isolated Hermetic Package Low RDS(on) High Switching Speeds Screened to TX, TXV And S LevelsDESCRIPTIONThis N-Channel Power MOSFET produ

 0.281. Size:41K  omnirel
om1n100sa.pdf

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OM1N100SA OM5N100SA OM1N100STOM3N100SA OM6N100SA OM3N100STPOWER MOSFET IN HERMETIC ISOLATEDJEDEC PACKAGE1000V, Up To 6 Amp, N-ChannelMOSFET In Hermetic Metal PackageFEATURES Isolated Hermetic Metal Package Fast Switching Low RDS(on) Available Screened To MIL-19500, TX, TXV And S Ceramic Feedthroughs Also AvailableDESCRIPTIONThis series of hermetically pa

 0.282. Size:42K  omnirel
om150l120cmc.pdf

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205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.comELECTRICAL CHARACTERISTICS: OM150L120CMC (Tc= 25C unless otherwise specified)Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICSCollector Emitter Breakdown Voltage, VCE=0V VCES 1200 VZero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 2AGate Emitter Leakage Current, VGE=+/-15

 0.283. Size:36K  omnirel
om150f120cma.pdf

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205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246,www.omnirel.comELECTRICAL CHARACTERISTICS: OM150F120CMA (Tc= 25C unless otherwise specified)Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICSCollector Emitter Breakdown Voltage, VCE=0V VCES 1200 VZero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 2AGate Emitter Leakage Current, VGE=+/-15V

 0.284. Size:414K  onsemi
irfm120a.pdf

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Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.285. Size:347K  onsemi
irlm120a.pdf

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Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.286. Size:442K  panasonic
mtm13127.pdf

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This product complies with the RoHS Directive (EU 2002/95/EC).MTM13127Silicon P-channel MOS FETFor DC-DC converter circuitsFor swiching circuits Overview PackageMTM13127 is the P-channel MOS FET that is highly suitable ofr DC-DC Codeconverter and other switching circuits. Mini3-G3-BPackage dimension clicks here. Click! Features Low drain

 0.287. Size:304K  panasonic
mtm13123.pdf

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Doc No. TT4-EA-14584Revision. 2Product StandardsMOS FETMTM131230BBFMTM131230BBFSilicon P-channel MOSFETUnit : mm 2.9For switching0.4 0.163 Features Low drain-source ON resistance : RDS(on)typ. = 40 m ( VGS = -4.0 V ) Halogen-free / RoHS compliant(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)1 21.1 Marking Symbol:BL(0.95)(0.95)1.91. Gate

 0.288. Size:262K  panasonic
mtm13227.pdf

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This product complies with the RoHS Directive (EU 2002/95/EC).MTM13227Silicon N-channel MOSFETFor switching Features Package Low on-resistance: Ron = 85 mW (VGS = -4.0 V) Code Small package: Mini3-G3-B Mini3-G3-B Contributes to miniaturization of sets, reduction of component count. Pin Name Eco-friendly Halogen-free package 1: Gate Packaging

 0.289. Size:159K  apt
apt20m18b2vrg apt20m18lvrg.pdf

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APT20M18B2VRA20M18LVR200V 100A 0.018B2VR POWER MOS V MOSFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LV

 0.290. Size:152K  apt
apt20m18b2vfrg apt20m18lvfrg.pdf

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APT20M18B2VFRA20M18LVFR200V 100A 0.018B2VFR POWER MOS V FREDFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.

 0.291. Size:39K  apt
apt20m18b2vfr.pdf

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APT20M18B2VFRAPT20M18LVFR200V 100A 0.018WB2VFRPOWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVFR Identical

 0.292. Size:69K  apt
apt30m17jll.pdf

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APT30M17JLL300V 135A 0.017WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's

 0.293. Size:70K  apt
apt20m16b2ll.pdf

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APT20M16B2LLAPT20M16LLL200V 100A 0.016WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast

 0.294. Size:166K  apt
apt20m11jll.pdf

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APT20M11JLL200V 176A 0.011R POWER MOS 7 MOSFETPower MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching losses"UL Recognized"along with exceptionall

 0.295. Size:74K  apt
apt20m11jvfr.pdf

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APT20M11JVFR200V 175A 0.011POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.ISOTOP Fast Recovery Body Diode 100% Avalanche

 0.296. Size:171K  apt
apt20m16b2llg apt20m16lllg.pdf

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APT20M16B2LLAPT20M16LLL200V 100A 0.016RB2LL POWER MOS 7 MOSFETT-MAXPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesLL

 0.297. Size:76K  apt
apt30m19jvfr.pdf

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APT30M19JVFR300V 130A 0.019POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.ISOTOP Fast Recovery Body Diode 100% Avalanche

 0.298. Size:67K  apt
apt10m19bvr.pdf

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APT10M19BVR100V 75A 0.019POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

 0.299. Size:61K  apt
apt20m10jll 1.pdf

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APT20M10JLL200V 185A 0.010 WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's

 0.300. Size:47K  apt
apt10m19bvrg.pdf

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APT10M19BVR100V 75A 0.019POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

 0.301. Size:38K  apt
apt20m18b2vr.pdf

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APT20M18B2VRAPT20M18LVR200V 100A 0.018WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specificati

 0.302. Size:74K  apt
apt10m19bvfr.pdf

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APT10M19BVFR100V 75A 0.019POWER MOS V FREDFETTO-247Power MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avala

 0.303. Size:70K  apt
apt10m11jvr.pdf

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APT10M11JVR100V 144A 0.011POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche

 0.304. Size:63K  apt
apt10m11b2vr.pdf

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APT10M11B2VR100V 100A 0.011POWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D L

 0.305. Size:70K  apt
apt10m19svr.pdf

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APT10M19SVR100V 75A 0.019POWER MOS VD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

 0.306. Size:63K  apt
apt20m10jfll.pdf

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APT20M10JFLL200V 185A 0.010WTMFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent wi

 0.307. Size:64K  apt
apt10m11b2vfrg apt10m11lvfrg.pdf

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APT10M11B2VFRAPT10M11LVFR100V 100A 0.011WB2VFRPOWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVFR Identical

 0.308. Size:112K  apt
apt10m19.pdf

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APT10M19BVFRAPT10M19SVFR100V 75A 0.019BVFR POWER MOS V FREDFETD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementTO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.SV

 0.309. Size:65K  apt
apt10m11lvr.pdf

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APT10M11LVR100V 100A 0.011POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.. Faster Switching 100% Avalanche Tested D Low

 0.310. Size:36K  apt
apt20m13pvr.pdf

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APT20M13PVR200V 146A 0.013POWER MOS VP-PackPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS V alsoachieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lowe

 0.311. Size:74K  apt
apt20m11jvr.pdf

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APT20M11JVR200V 175A 0.011POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche

 0.312. Size:69K  apt
apt20m10jll.pdf

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APT20M10JLL200V 185A 0.010WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's

 0.313. Size:162K  apt
apt20m16b2fllg apt20m16lfllg.pdf

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APT20M16B2FLLAPT20M16LFLL200V 100A 0.016RB2FLL POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching losses

 0.314. Size:74K  apt
apt20m19jvr.pdf

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APT20M19JVR200V 112A 0.019POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche

 0.315. Size:167K  apt
apt20m11jfll.pdf

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APT20M11JFLL200V 176A 0.011R POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with exceptionally fast switchin

 0.316. Size:118K  apt
apt10m11jvfr.pdf

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APT10M11JVFR100V 144A 0.011POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switchi

 0.317. Size:71K  apt
apt20m16b2fll.pdf

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APT20M16B2FLLAPT20M16LFLL200V 100A 0.016WTMFREDFET POWER MOS 7B2FLLPower MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchingT-MAXTO-264losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with excepti

 0.318. Size:117K  apt
apt10m19bvfrg apt10m19svfr apt10m19svfrg.pdf

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APT10M19BVFRAPT10M19SVFR100V 75A 0.019BVFR POWER MOS V FREDFETD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementTO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.SV

 0.319. Size:74K  apt
apt30m19jvr.pdf

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APT30M19JVR300V 130A 0.019POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche

 0.320. Size:167K  apt
apt30m17jfll.pdf

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APT30M17JFLL300V 135A 0.017R POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching losses"UL Recognized"along with exceptiona

 0.321. Size:1101K  cree
c2m1000170j.pdf

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VDS 1700 VID @ 25C 5.3 AC2M1000170J RDS(on) 1.0 Silicon Carbide Power MOSFET TM C2M MOSFET TechnologyN-Channel Enhancement ModeFeatures PackageTAB High blocking voltage with low RDS(on)Drain Easy to parallel and simple to drive Low parasitic inductance Separate driver source pin Ultra-low drain-gate capacitance Halogen Free, RoHS compli

 0.322. Size:622K  cree
c2m1000170d.pdf

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VDS 1700 VID @ 25C 4.9 AC2M1000170D RDS(on) 1.0 Silicon Carbide Power MOSFET TM Z-FET MOSFETN-Channel Enhancement ModeFeatures Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Resistant to Latch-Up Halogen Free, RoHS CompliantBenefitsTO-247-3 Higher System Effi

 0.323. Size:746K  cree
cas100h12am1.pdf

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CAS100H12AM1VDS 1.2 kV1.2 kV, 100A Silicon Carbide RDS(on) (TJ = 25C) 16 mHalf-Bridge ModuleEOFF (TJ = 125C) 1.8 mJZ-FETTM MOSFET and Z-RecTM DiodeFeatures Package Ultra Low Loss Zero Turn-off Tail Current from MOSFET Zero Reverse Recovery Current from Diode High-Frequency Operation Positive Temperature Coefficient on VF and VDS(on) AlSiC Base

 0.324. Size:795K  cree
ccs050m12cm2.pdf

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VDS 1.2 kVCCS050M12CM21.2kV, 50A Silicon Carbide RDS(on) (TJ = 25C) 25 mSix-Pack (Three Phase) ModuleEOFF (TJ = 150C) 0.6 mJZ-FETTM MOSFET and Z-RecTM DiodeFeatures Package Ultra Low Loss Zero Reverse Recovery Current Zero Turn-off Tail Current High-Frequency Operation Positive Temperature Coefficient on VF and VDS(on) Cu Baseplate, AlN DBCSy

 0.325. Size:288K  eupec
bsm150gal120dlc.pdf

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Technische Information / technical informationIGBT-ModuleBSM150GAL120DLCIGBT-modules62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Vorlufige Daten / preliminary dataHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emit

 0.326. Size:95K  eupec
bsm100gb170dlc.pdf

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Technische Information / Technical InformationIGBT-ModuleBSM 100 GB 170 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-SperrspannungVCES 1700 Vcollector-emitter voltageTC = 80 C IC,nom. 100 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 200 APeriodischer Kollektor Spitzens

 0.327. Size:250K  eupec
bsm10gd120dn2.pdf

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BSM 10 GD 120 DN2IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 10 GD 120 DN2 1200V 15A ECONOPACK 2 C67076-A2513-A67BSM 10 GD120DN2E3224 1200V 15A ECONOPACK 2K C67070-A2513-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1

 0.328. Size:158K  eupec
bsm10gp60.pdf

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Technische Information / Technical InformationIGBT-ModuleBSM10GP60IGBT-ModulesElektrische Eigenschaften / Electrical propertiesHchstzulssige Werte / Maximum rated valuesDiode Gleichrichter/ Diode RectifierPeriodische Rckw. SpitzensperrspannungVRRM 1600 Vrepetitive peak reverse voltageDurchlastrom GrenzeffektivwertIFRMSM 40 ARMS forward current per chip Dauergl

 0.329. Size:95K  eupec
bsm150gb170dlc.pdf

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Technische Information / Technical InformationIGBT-ModuleBSM 150 GB 170 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 1700 Vcollector-emitter voltageTC = 80 C IC,nom. 150 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 300 APeriodischer Kollektor Spitzen

 0.330. Size:124K  eupec
bsm150gb60dlc.pdf

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Technische Information / Technical InformationIGBT-ModuleBSM 150 GB 60 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 600 Vcollector-emitter voltageTc= 60C IC,nom. 150 AKollektor-DauergleichstromDC-collector currentTc= 25C IC 180 APeriodischer Kollektor Spitzenstrom

 0.331. Size:224K  eupec
bsm100gb170dn2.pdf

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BSM 100 GB 170 DN2IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate RG on,min = 15 OhmType VCE IC Package Ordering CodeBSM 100 GB 170 DN2 1700V 145A HALF-BRIDGE 2 C67070-A2703-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1700 VCollector-gate voltage VCGRRGE = 20 k 1700

 0.332. Size:134K  eupec
bsm150gd60dlc.pdf

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Technische Information / Technical InformationIGBT-ModuleBSM 150 GD 60 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 600 Vcollector-emitter voltageTc= 55C IC,nom. 150 AKollektor-DauergleichstromDC-collector currentTc= 25C IC 180 APeriodischer Kollektor Spitzenstrom

 0.333. Size:261K  eupec
bsm15gd120dn2.pdf

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BSM 15 GD 120 DN2IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 15 GD 120 DN2 1200V 25A ECONOPACK 2 C67076-A2504-A67BSM 15 GD120DN2E3224 1200V 25A ECONOPACK 2K C67070-A2504-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1

 0.334. Size:142K  eupec
bsm150gal120dn2.pdf

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BSM 150 GAL 120 DN2IGBT Power Module Single switch with chopper diode at collector Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 150 GAL 120 DN2 1200V 210A HALF BRIDGE GAL 2 C67076-A2013-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE

 0.335. Size:141K  eupec
bsm150gar120dn2.pdf

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BSM 150 GAR 120 DN2IGBT Power Module Single switch with chopper diode at collector Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 150 GAR 120 DN2 1200V 210A HALF BRIDGE GAR 2 C67076-A2013-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE

 0.336. Size:277K  eupec
bsm10gd120dn2 e3224.pdf

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BSM 10 GD 120 DN2 E3224IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 10 GD 120 DN2 1200V 15A ECONOPACK 2 C67076-A2513-A67BSM 10 GD120DN2E3224 1200V 15A ECONOPACK 2K C67070-A2513-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage

 0.337. Size:229K  eupec
bsm150gb170dn2.pdf

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BSM 150 GB 170 DN2IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate RG on,min = 10 OhmType VCE IC Package Ordering CodeBSM 150 GB 170 DN2 1700V 220A HALF-BRIDGE 2 C67070-A2704-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1700 VCollector-gate voltage VCGRRGE = 20 k 1700

 0.338. Size:738K  eupec
bsm150gb120dn2.pdf

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BSM 150 GB 120 DN2IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 150 GB 120 DN2 1200V 210A HALF-BRIDGE 2 C67076-A2108-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate-emitter voltage VGE

 0.339. Size:126K  eupec
bsm10gp120.pdf

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Technische Information / Technical InformationIGBT-ModuleBSM10GP120IGBT-ModulesElektrische Eigenschaften / Electrical propertiesHchstzulssige Werte / Maximum rated valuesDiode Gleichrichter/ Diode RectifierPeriodische Rckw. SpitzensperrspannungVRRM 1600 Vrepetitive peak reverse voltageDurchlastrom GrenzeffektivwertIFRMSM 40 ARMS forward current per chip Dauergl

 0.340. Size:163K  eupec
bsm15gp120.pdf

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Technische Information / Technical InformationIGBT-ModuleBSM15GP120IGBT-ModulesElektrische Eigenschaften / Electrical propertiesHchstzulssige Werte / Maximum rated valuesDiode Gleichrichter/ Diode RectifierPeriodische Rckw. SpitzensperrspannungVRRM 1600 Vrepetitive peak reverse voltageDurchlastrom GrenzeffektivwertIFRMSM 40 ARMS forward current per chip Dauerg

 0.341. Size:166K  eupec
bsm100gb120dn2.pdf

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BSM 100 GB 120 DN2IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 100 GB 120 DN2 1200V 150A HALF-BRIDGE 2 C67076-A2107-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate-emitter voltage VGE

 0.342. Size:160K  eupec
bsm15gp60.pdf

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Technische Information / Technical InformationIGBT-ModuleBSM15GP60IGBT-ModulesElektrische Eigenschaften / Electrical propertiesHchstzulssige Werte / Maximum rated valuesDiode Gleichrichter/ Diode RectifierPeriodische Rckw. SpitzensperrspannungVRRM 1600 Vrepetitive peak reverse voltageDurchlastrom GrenzeffektivwertIFRMSM 40 ARMS forward current per chip Dauergle

 0.343. Size:141K  eupec
bsm100gar120dn2.pdf

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BSM 100 GAR 120 DN2IGBT Power Module Single switch with chopper diode at collector Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 100 GAR 120 DN2 1200V 150A HALF BRIDGE GAR 2 C67076-A2012-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE

 0.344. Size:229K  eupec
bsm100gb120dlck.pdf

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Technische Information / technical informationIGBT-ModuleBSM100GB120DLCKIGBT-modulesIGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emitter voltageKollektor-Dauergleichstrom T = 80C, T = 150C I 100 ADC-collector current T = 25C, T = 150C I 205 APeriodischer Kollektor Spitzen

 0.345. Size:209K  eupec
bsm100gb120dn2k.pdf

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BSM 100 GB 120 DN2KIGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 100 GB 120 DN2K 1200V 145A HALF-BRIDGE 1 C67070-A2107-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate-emitter voltage V

 0.346. Size:126K  eupec
bsm100gb60dlc.pdf

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Technische Information / Technical InformationIGBT-ModuleBSM 100 GB 60 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 600 Vcollector-emitter voltageTc= 70C IC,nom. 100 AKollektor-DauergleichstromDC-collector currentTc= 25C IC 130 APeriodischer Kollektor Spitzenstrom

 0.347. Size:144K  eupec
bsm100gal120dn2.pdf

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BSM 100 GAL 120 DN2IGBT Power Module Single switch with chopper diode at collector Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 100 GAL 120 DN2 1200V 150A HALF BRIDGE GAL 2 C67076-A2012-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE

 0.348. Size:136K  eupec
bsm100gd60dlc.pdf

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Technische Information / Technical InformationIGBT-ModuleBSM 100 GD 60 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 600 Vcollector-emitter voltageTc= 65C IC,nom. 100 AKollektor-DauergleichstromDC-collector currentTc= 25C IC 130 APeriodischer Kollektor Spitzenstrom

 0.349. Size:713K  fuji
7mbr25vm120-50.pdf

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7MBR25VM120-50 IGBT ModulesIGBT MODULE (V series)1200V / 25A / PIMFeaturesLow V (sat)CECompact PackageP.C.Board Mount ModuleConverter Diode Bridge Dynamic Brake CircuitRoHS compliant productApplicationsInverter for Motor DriveAC and DC Servo Drive AmplifierUninterruptible Power SupplyMaximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25C unless o

 0.350. Size:716K  fuji
7mbr35vm120-50.pdf

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7MBR35VM120-50 IGBT ModulesIGBT MODULE (V series)1200V / 35A / PIMFeaturesLow V (sat)CECompact PackageP.C.Board Mount ModuleConverter Diode Bridge Dynamic Brake CircuitRoHS compliant productApplicationsInverter for Motor DriveAC and DC Servo Drive AmplifierUninterruptible Power SupplyMaximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25C unless o

 0.351. Size:707K  fuji
7mbr50vm120-50.pdf

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7MBR50VM120-50 IGBT ModulesIGBT MODULE (V series)1200V / 50A / PIMFeaturesLow V (sat)CECompact PackageP.C.Board Mount ModuleConverter Diode Bridge Dynamic Brake CircuitRoHS compliant productApplicationsInverter for Motor DriveAC and DC Servo Drive Amplifi erUninterruptible Power SupplyMaximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25C unless

 0.352. Size:47K  intersil
frm130.pdf

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FRM130D, FRM130R,FRM130H14A, 100V, 0.180 Ohm, Rad Hard,N-Channel Power MOSFETsJune 1998Features PackageTO-204AA 14A, 100V, RDS(on) = 0.180 Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)

 0.353. Size:47K  intersil
frm140.pdf

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FRM140D, FRM140R,FRM140H23A, 100V, 0.130 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 23A, 100V, RDS(on) = 0.130TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)

 0.354. Size:724K  semelab
2n6661m1a.pdf

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6661M1A VDSS = 90V , ID = 1.0A, RDS(ON) = 4.0 Fast Switching Low Threshold Voltage (Logic Level) Low CISS Integral Source-Drain Body Diode Hermetic Metal TO-257AA Package High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VDS Drain Source V

 0.355. Size:105K  semelab
sml100m12msf.pdf

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NORMALLY-OFF SILICON CARBIDE POWER JFET SML100M12MSF RDS(on)max of 0.150 High Temperature Operation Tj = 200C Low Gate Charge and Intrinsic Capacitance Positive Temperature Coefficient and Temperature Independent Switching Behaviour APPLICATIONS UPS SMPS Induction Heating Motor Drive ABSOLUTE MAXIMUM RATINGS (TC = 25C unless othe

 0.356. Size:23K  semelab
2n7224 irfm150.pdf

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2N7224SEMEIRFM150LABMECHANICAL DATADimensions in mm (inches)NCHANNEL13.59 (0.535) 6.32 (0.249)POWER MOSFET13.84 (0.545) 6.60 (0.260)3.53 (0.139) 1.02 (0.040)Dia.3.78 (0.149) 1.27 (0.050)VDSS 100VID(cont) 34ARDS(on) 0.0701 2 3FEATURES REPETITIVE AVALANCHE RATING ISOLATED AND HERMETICALLY SEALED ALTERNATIVE TO TO-3 PACKAGE0.89 (0.035)1.14 (0

 0.357. Size:22K  semelab
irfm1310st.pdf

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IRFM1310STMECHANICAL DATADimensions in mm (inches)NCHANNEL POWER MOSFET VDSS 100VID(cont) 34ARDS(on) 0.070 FEATURES REPETITIVE AVALANCHE RATING ISOLATED AND HERMETICALLY SEALED EASE OF PARALLELINGTO254Z Package SIMPLE DRIVE REQUIREMENTSPin 1 Drain Pin 2 Sou

 0.358. Size:75K  secos
sum1960ne.pdf

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SUM1960NE 0.32A , 60V , RDS(ON) 2 N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SOT-363 These miniature surface mount MOSFETs utilize a high AEcell density trench process to provide low RDS(on) and to Lensure minimal power loss and heat dissipation

 0.359. Size:334K  taiwansemi
tsm150p04lcs.pdf

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TSM150P04LCS Taiwan Semiconductor P-Channel Power MOSFET -40V, -22A, 15m FEATURES KEY PERFORMANCE PARAMETERS Low RDS(ON) to minimize conductive losses PARAMETER VALUE UNIT Logic level VDS -40 V Low gate charge for fast power switching RDS(on) VGS = -10V 15 100% UIS and Rg tested m Compliant to RoHS directive 2011/65/EU and in (max) VGS = -4.5V

 0.360. Size:381K  taiwansemi
tsm10n60ci tsm10n60cz.pdf

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TSM10N60 600V N-Channel MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)()(max) ID (A) 2. Drain 3. Source 600 0.75 @ VGS =10V 10 Features Block Diagram Advanced high dense cell design. High Power and Current handing capability. Application Power Supply. Lighting. Ordering Information Part No. Package Packing

 0.361. Size:606K  taiwansemi
tsm100n06cz.pdf

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TSM100N06 60V N-Channel Power MOSFET TO-220 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Drain 3. Source 60 6.7 @ VGS =10V 100 Features Block Diagram Advanced Trench Technology Low RDS(ON) 6.7m (Max.) Low gate charge typical @ 81nC (Typ.) Low Crss typical @ 339pF (Typ.) Ordering Information Part No. Package Packing

 0.362. Size:297K  taiwansemi
tsm10n06cp.pdf

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TSM10N06 60V N-Channel MOSFET TO-252 Pin Definition: PRODUCT SUMMARY 1. Gate (DPAK) VDS (V) RDSON (m) ID (A) 2. Drain 3. Source 65 @ VGS = 10V 10 60 80 @ VGS = 5V 10 110 @ VGS = 4V 9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering In

 0.363. Size:336K  taiwansemi
tsm10nc60cf.pdf

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TSM10NC60CF Taiwan Semiconductor N-Channel Power MOSFET 600V, 10A, 0.75 FEATURES KEY PERFORMANCE PARAMETERS 100% UIS and Rg tested PARAMETER VALUE UNIT Advanced planar process VDS 600 V Compliant to RoHS Directive 2011/65/EU and in RDS(on) (max) 0.75 accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 Qg 33 nC APPLICATIONS

 0.364. Size:62K  taiwansemi
tsm160n10cz.pdf

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TSM160N10 100V N-Channel Power MOSFET TO-220 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Drain 3. Source 100 5.5 @ VGS =10V 160 Features Block Diagram Advanced Trench Technology Low RDS(ON) 5.5m (Max.) Low gate charge typical @ 154nC (Typ.) Low Crss typical @ 300pF (Typ.) Ordering Information Part No. Package Packing

 0.365. Size:124K  taiwansemi
tsm1nb60sct.pdf

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TSM1NB60S 600V N-Channel Power MOSFET TO-92 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 600 10 @ VGS =10V 0.25 General Description The TSM1NB60S N-Channel Power MOSFET is produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching per

 0.366. Size:289K  taiwansemi
tsm1n80cw tsm1n80sct.pdf

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TSM1N80 800V N-Channel MOSFET TO-92 SOT-223 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 21.6 @ VGS =10V 0.15 800 General Description The TSM1N80 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to with

 0.367. Size:124K  taiwansemi
tsm1n45dcs.pdf

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Preliminary TSM1N45D 450V N-Channel Power MOSFET SOP-8 PRODUCT SUMMARY Pin Definition: 1. Source 1 8. Drain 1 VDS (V) RDS(on)() ID (A) 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 450 4.25 @ VGS =10V 0.25 4. Gate 2 5. Drain 2 General Description The TSM1N45 is N-Channel enhancement mode power field effect transistors are produced using planar DMOS technology process

 0.368. Size:368K  taiwansemi
tsm1n60s a07.pdf

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TSM1N60S 600V N-Channel Power MOSFET TO-92 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 600 11 @ VGS =10V 0.3 General Description The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand

 0.369. Size:419K  taiwansemi
tsm10n80ci tsm10n80cz.pdf

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TSM10N80 800V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 800 1.05 @ VGS =10V 9.5 General Description The TSM10N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, pr

 0.370. Size:78K  taiwansemi
tsm10p06cp.pdf

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TSM10P06 60V P-Channel MOSFET TO-252 Pin Definition: PRODUCT SUMMARY 1. Gate (DPAK) 2. Drain VDS (V) RDSON (m) ID (A) 3. Source 170 @ VGS = -10V -5 -60 220 @ VGS = -4.5V -2 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Pa

 0.371. Size:185K  taiwansemi
tsm1nb60ch tsm1nb60cp tsm1nb60cw.pdf

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TSM1NB60 600V N-Channel Power MOSFET TO-251 TO-252 SOT-223 PRODUCT SUMMARY Pin Definition: (IPAK) (DPAK) 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 600 10 @ VGS =10V 0.5 General Description The TSM1NB60 N-Channel Power MOSFET is produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, p

 0.372. Size:403K  taiwansemi
tsm1n60l a07.pdf

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TSM1N60L 600V N-Channel Power MOSFET PRODUCT SUMMARY TO-252 TO-251 VDS (V) RDS(on)() ID (A) Pin Definition: 1. Gate 600 12 @ VGS =10V 1 2. Drain 3. Source General Description The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withs

 0.373. Size:62K  taiwansemi
tsm190n08cz.pdf

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TSM190N08 75V N-Channel Power MOSFET TO-220 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Drain 3. Source 75 4.2 @ VGS =10V 190 Features Block Diagram Advanced Trench Technology Low RDS(ON) 4.2m (Max.) Low gate charge typical @ 160nC (Typ.) Low Crss typical @ 300pF (Typ.) Ordering Information Part No. Package Packing

 0.374. Size:463K  taiwansemi
tsm1n45ct tsm1n45cw.pdf

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TSM1N45 450V N-Channel Power MOSFET TO-92 SOT-223 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 450 4.25 @ VGS =10V 0.25 General Description The TSM1N45 is N-Channel enhancement mode power field effect transistors are produced using planar DMOS technology process. This advanced technology has been especially tailored to minimize

 0.375. Size:118K  taiwansemi
tsm1n50ct.pdf

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 0.376. Size:518K  taiwansemi
tsm13n50ci tsm13n50cz.pdf

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TSM13N50 500V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 500 0.48 @ VGS =10V 13 General Description The TSM13N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, prov

 0.377. Size:118K  taiwansemi
tsm12n02 a07.pdf

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 0.378. Size:401K  taiwansemi
tsm15n50ci.pdf

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TSM15N50 500V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 500 0.44 @ VGS =10V 14 General Description The TSM15N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, pro

 0.379. Size:303K  taiwansemi
tsm1n60lch tsm1n60lcp.pdf

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TSM1N60L 600V N-Channel Power MOSFET TO-252 TO-251 Pin Definition: PRODUCT SUMMARY 1. Gate 2. Drain VDS (V) RDS(on)() ID (A) 3. Source 600 12 @ VGS =10V 1 General Description The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to wit

 0.380. Size:83K  taiwansemi
tsm19n20cp.pdf

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TSM19N20 200V N-Channel Power MOSFET TO-252 Pin Definition: PRODUCT SUMMARY 1. Gate (DPAK) VDS (V) RDS(on)(m) ID (A) 2. Drain 3. Source 200 92 @ VGS =10V 18 Features Block Diagram Advanced Trench Technology Low RDS(ON) 92m (Max.) Low gate charge typical @ 55nC (Typ.) Low Crss typical @ 73pF (Typ.) Ordering Information Part No. Package Pa

 0.381. Size:102K  taiwansemi
tsm15n03pq33.pdf

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TSM15N03PQ33 30V N-Channel Power MOSFET PDFN33 PRODUCT SUMMARY Pin Definition: 1. Source 8. Drain VDS (V) RDS(on)(m) ID (A) 2. Source 7. Drain 12 @ VGS =10V 7.8 3. Source 6. Drain 30 4. Gate 5. Drain 17 @ VGS =4.5V 7 Features Block Diagram Advanced Trench Technology Low On-Resistance Low gate charge typical @ 3.6nC (Typ.) Low Crss typical @

 0.382. Size:101K  taiwansemi
tsm110n06cz.pdf

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 0.383. Size:366K  taiwansemi
tsm1n60sct.pdf

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TSM1N60S 600V N-Channel Power MOSFET TO-92 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 600 11 @ VGS =10V 0.3 General Description The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand

 0.384. Size:114K  isahaya
isa2166am1.pdf

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 0.385. Size:139K  isahaya
inj0003ac1 inj0003am1 inj0003au1.pdf

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J0003A SERIES High speed switchingSilicon P-channel MOSFETDESCRIPTION OUTLINE DRAWING (Unitmm) INJ0003A is a Silicon P-channel MOSFET. INJ0003AU1 This product is most suitable for low voltage 1.5use such as portable machinery , because of 0.35 0.80.35low voltage drive and low on resistance. JEITASC-75A FEATURE JEDEC Input impedan

 0.386. Size:150K  isahaya
ink0103ac1 ink0103am1 ink0103au1.pdf

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 0.387. Size:138K  isahaya
ink0002ac1 ink0002am1 ink0002au1.pdf

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0002A SERIES High speed switchingSilicon N-channel MOSFETDESCRIPTION OUTLINE DRAWING (Unitmm) INK0002A is a Silicon N-channel MOSFET. INK0002AU1 This product is most suitable for low voltage 1.5use such as portable machinery , because of 0.35 0.80.35low voltage drive and low on resistance. JEITASC-75A FEATURE JEDEC Input imped

 0.388. Size:138K  isahaya
ink0010ac1 ink0010am1 ink0010au1.pdf

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0010A SERIES High speed switchingSilicon N-channel MOSFETDESCRIPTION OUTLINE DRAWING (Unitmm) INK0010A is a Silicon N-channel MOSFET. INK0010AU1 This product is most suitable for low voltage 1.5use such as portable machinery , because of 0.35 0.80.35low voltage drive and low on resistance. JEITASC-75A FEATURE JEDEC Input imped

 0.389. Size:137K  isahaya
ink0003ac1 ink0003am1 ink0003au1.pdf

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0003A SERIES High speed switchingSilicon N-channel MOSFETDESCRIPTION OUTLINE DRAWING (Unitmm) INK0003A is a Silicon N-channel MOSFET. INK0003AU1 This product is most suitable for low voltage 1.5use such as portable machinery , because of 0.35 0.80.35low voltage drive and low on resistance. JEITASC-75A FEATURE JEDEC Input imped

 0.390. Size:137K  isahaya
inj0001ac1 inj0001am1 inj0001au1.pdf

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J0001A SERIES High speed switchingSilicon P-channel MOSFETDESCRIPTION OUTLINE DRAWING (Unitmm) INJ0001A is a Silicon P-channel MOSFET. INJ0001AU1 This product is most suitable for low voltage 1.5use such as portable machinery , because of 0.35 0.80.35low voltage drive and low on resistance. JEITASC-75A FEATURE JEDEC Input impedan

 0.391. Size:152K  isahaya
isc6053am1.pdf

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ISC6053AM1FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATIONSILICON NPN EPITAXIAL TYPEUnitmmOUTLINE DRAWING DESCRIPTION 2.1 ISC6053AM1 is a silicon NPN epitaxial type transistor 0.425 1.25 0.425 Designed with high collector current, low VCE(sat). FEATURE High collector current ICMAX=650mA Low collector to emitter saturation voltage VCE

 0.392. Size:111K  isahaya
rt2a00am1.pdf

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 0.393. Size:189K  isahaya
isa1235ac1 isa1602am1.pdf

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SMALL-SIGNAL TRANSISTORISA1235AC1 ISA1602AM1FOR LOW FREQUENCY AMPLIFY APPLICATIONSILICON PNP EPITAXIAL TYPEOUTLINE DRAWING UNITmmDESCRIPTION ISA1235AC1 ISA1602AM1 is super mini ISA1235AC1 ISA1602AM1 package resin sealed silicon PNP epitaxial type transistor. 2.12.8These are designed for low frequency voltage 0.425 1.25 0.4251.5 0.65 0.65amplify applicati

 0.394. Size:143K  isahaya
isa2188am1.pdf

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ISA2188AM1FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATIONSILICON PNP EPITAXIAL TYPEUnitmmOUTLINE DRAWING DESCRIPTION 2.1 ISA2188AM1 is a silicon PNP epitaxial type transistor 0.425 1.25 0.425 Designed with high collector current, low VCE(sat). FEATURE High collector current ICMAX=-650mA Low collector to emitter saturation voltage VCE

 0.395. Size:137K  isahaya
ink0001ac1 ink0001am1 ink0001au1.pdf

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0001A SERIES High speed switchingSilicon N-channel MOSFETDESCRIPTION OUTLINE DRAWING (Unitmm) INK0001A is a Silicon N-channel MOSFET. INK0001AU1 This product is most suitable for low voltage 1.5use such as portable machinery , because of 0.35 0.80.35low voltage drive and low on resistance. JEITASC-75A FEATURE JEDEC Input imped

 0.396. Size:139K  isahaya
ink0012ac1 ink0012am1 ink0012au1.pdf

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0012A SERIES High speed switchingSilicon N-channel MOSFETDESCRIPTION OUTLINE DRAWING (Unitmm) INK0012A is a Silicon N-channel MOSFET. INK0012AU1 This product is most suitable for low voltage 1.5use such as portable machinery , because of 0.35 0.80.35low voltage drive and low on resistance. JEITASC-75A FEATURE JEDEC Input imped

 0.397. Size:205K  isahaya
ink0112ac1 ink0112am1 ink0112au1 int0112am1.pdf

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INK0112AX SERIES High speed switching Silicon N-channel MOSFETDESCRIPTION OUTLINE DRAWING (Unitmm) INK0112A is a Silicon N-channel MOSFET. This product is most suitable for low voltage INK0112AU1 use such as portable machinery , because of low 1.5voltage drive and low on resistance. 0.35 0.80.35FEATURE Input impedance is high, and not necessary to JEIT

 0.398. Size:139K  isahaya
ink0001bc1 ink0001bm1 ink0001bu1.pdf

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0001B SERIES High speed switchingSilicon N-channel MOSFETDESCRIPTION OUTLINE DRAWING (Unitmm) INK0001B is a Silicon N-channel MOSFET. INK0001BU1 This product is most suitable for low voltage 1.5use such as portable machinery , because of 0.35 0.80.35low voltage drive and low on resistance. JEITASC-75A FEATURE JEDEC Input imped

 0.399. Size:140K  isahaya
inj0002ac1 inj0002am1 inj0002au1.pdf

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J0002A SERIES High speed switchingSilicon P-channel MOSFETDESCRIPTION OUTLINE DRAWING (Unitmm) INJ0002A is a Silicon P-channel MOSFET. INJ0002AU1 This product is most suitable for low voltage 1.5use such as portable machinery , because of 0.35 0.80.35low voltage drive and low on resistance. JEITASC-75A FEATURE JEDEC Input impedan

 0.400. Size:153K  isahaya
ink0102ac1 ink0102am1 ink0102au1.pdf

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 0.401. Size:142K  isahaya
inj0011ac1 inj0011am1 inj0011au1.pdf

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J0011A SERIES High speed switchingSilicon P-channel MOSFETDESCRIPTION OUTLINE DRAWING (Unitmm) INJ0011A is a Silicon P-channel MOSFET. INJ0011AU1 This product is most suitable for low voltage 1.5use such as portable machinery , because of 0.35 0.80.35low voltage drive and low on resistance. JEITASC-75A FEATURE JEDEC Input impedan

 0.402. Size:1816K  jiangsu
cjm1206.pdf

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFNWB2*2-6L-J Plastic-Encapsulate MOSFETS CJM1206 P-Channel Power MOSFET DFNWB2*2-6L-JID V(BR)DSS RDS(on)MAX m@-4.5V451. DRAIN 2. DRAIN -12V 60 m -6A@-2.5V3. GATE m@-1.8V90 4. SOURCE 5. DRAIN 6. DRAIN DESCRIPTION The CJM1206 uses advanced trench technology to provide excellent RDS(on) , low gate

 0.403. Size:1675K  jiangsu
cjm1216.pdf

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB2*2-6L-J Plastic-Encapsulate MOSFETS CJM1216 P-Channel Power MOSFET DFNWB22-6L-J ID V(BR)DSS RDS(on)MAX 21m@-4.5V 1. DRAIN -12 -16A V 27m@-2.5V 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN DESCRIPTION The CJM1216 uses advanced trench technology to provide excellent RDS(on) , low gate charge and

 0.404. Size:191K  microsemi
aptm120da30ct1g.pdf

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APTM120DA30CT1G VDSS = 1200V Boost chopper RDSon = 300m typ @ Tj = 25C MOSFET + SiC chopper diode ID = 31A @ Tc = 25C Power Module Application 5 6 11 AC and DC motor control Switched Mode Power Supplies Power Factor Correction CR1Features 3NTC Power MOS 8 MOSFET 4- Low RDSon Q2- Low input and Miller capacitance - Low gate charge

 0.405. Size:212K  microsemi
apt8m100b apt8m100s.pdf

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APT8M100B APT8M100S 1000V, 8A, 1.80 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKA proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of

 0.406. Size:107K  microsemi
apt20m120jcu3.pdf

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APT20M120JCU3VDSS = 1200V ISOTOP Buck chopper RDSon = 560m typ @ Tj = 25C MOSFET + SiC chopper diode ID = 20A @ Tc = 25C Power module Application D AC and DC motor control Switched Mode Power Supplies Features Power MOS 8 MOSFET G- Low RDSon S- Low input and Miller capacitance - Low gate charge - Avalanche energy rated SiC Schott

 0.407. Size:122K  microsemi
apt19m120j.pdf

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APT19M120J 1200V, 19A, 0.53 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of the poly-silicon

 0.408. Size:115K  microsemi
apt7m120b apt7m120s.pdf

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APT7M120B APT7M120S 1200V, 8A, 2.1 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKA proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of t

 0.409. Size:207K  microsemi
apt24m120b2 apt24m120l.pdf

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APT24M120B2 APT24M120L 1200V, 24A, 0.63 MaxN-Channel MOSFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and

 0.410. Size:264K  microsemi
aptm100um65scavg.pdf

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APTM100UM65SCAVGVDSS = 1000V Single switch RDSon = 65m typ @ Tj = 25C Series & SiC parallel diodes ID = 145A @ Tc = 25C MOSFET Power ModuleD Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control DKFeatures Power MOS 7 MOSFETs - Low RDSon G - Low input and Miller capacitance - Low g

 0.411. Size:194K  microsemi
apt31m100b2 apt31m100l.pdf

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APT31M100B2 APT31M100L 1000V, 32A, 0.38 MaxN-Channel MOSFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and

 0.412. Size:107K  microsemi
apt26m100jcu3.pdf

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APT26M100JCU3VDSS = 1000V ISOTOP Buck chopper RDSon = 330m typ @ Tj = 25C MOSFET + SiC chopper diode ID = 26A @ Tc = 25C Power module Application D AC and DC motor control Switched Mode Power Supplies Features Power MOS 8 MOSFET G- Low RDSon S- Low input and Miller capacitance - Low gate charge - Avalanche energy rated SiC Schott

 0.413. Size:197K  microsemi
aptm100da18ct1g.pdf

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APTM100DA18CT1GVDSS = 1000V Boost chopper RDSon = 180m typ @ Tj = 25C MOSFET + SiC chopper diode ID = 40A @ Tc = 25C Power Module Application 5 6 11 AC and DC motor control Switched Mode Power Supplies Power Factor Correction CR1 Features Power MOS 8 MOSFETs 3NTC- Low RDSon 4Q2- Low input and Miller capacitance - Low gate charge

 0.414. Size:212K  microsemi
apt14m120b apt14m120s.pdf

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APT14M120B APT14M120S 1200V, 14A, 1.10 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKA proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance

 0.415. Size:107K  microsemi
apt17m120jcu3.pdf

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APT17M120JCU3VDSS = 1200V ISOTOP Buck chopper RDSon = 680m typ @ Tj = 25C MOSFET + SiC chopper diode ID = 17A @ Tc = 25C Power module Application D AC and DC motor control Switched Mode Power Supplies Features Power MOS 8 MOSFET G- Low RDSon S- Low input and Miller capacitance - Low gate charge - Avalanche energy rated SiC Schott

 0.416. Size:106K  microsemi
apt26m100jcu2.pdf

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APT26M100JCU2VDSS = 1000V ISOTOP Boost chopper RDSon = 330m typ @ Tj = 25C MOSFET + SiC chopper diode ID = 26A @ Tc = 25C Power module Application K AC and DC motor control Switched Mode Power Supplies Power Factor Correction D Brake switch Features Power MOS 8 MOSFET G - Low RDSon - Low input and Miller capacitance - Low gat

 0.417. Size:106K  microsemi
apt22m100jcu2.pdf

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APT22M100JCU2VDSS = 1000V ISOTOP Boost chopper RDSon = 400m typ @ Tj = 25C MOSFET + SiC chopper diode ID = 22A @ Tc = 25C Power module Application K AC and DC motor control Switched Mode Power Supplies Power Factor Correction D Brake switch Features Power MOS 8 MOSFET G - Low RDSon - Low input and Miller capacitance - Low gat

 0.418. Size:293K  microsemi
aptm100a23sctg.pdf

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APTM100A23SCTG VDSS = 1000V Phase leg RDSon = 230m typ @ Tj = 25C Series & SiC parallel diodes ID = 36A @ Tc = 25C MOSFET Power Module Application Motor control Switched Mode Power Supplies NTC2 Uninterruptible Power Supplies VBUSFeatures Q1 Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance G1OUT - Low gate charge -

 0.419. Size:107K  microsemi
apt22m100jcu3.pdf

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APT22M100JCU3VDSS = 1000V ISOTOP Buck chopper RDSon = 400m typ @ Tj = 25C MOSFET + SiC chopper diode ID = 22A @ Tc = 25C Power module Application D AC and DC motor control Switched Mode Power Supplies Features Power MOS 8 MOSFET G- Low RDSon S- Low input and Miller capacitance - Low gate charge - Avalanche energy rated SiC Schott

 0.420. Size:210K  microsemi
apt37m100b2 apt37m100l.pdf

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APT37M100B2 APT37M100L 1000V, 37A, 0.33 MaxN-Channel MOSFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and

 0.421. Size:311K  microsemi
aptc60dam18ctg.pdf

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APTC60DAM18CTG Boost chopper VDSS = 600V SiC FWD diode RDSon = 18m max @ Tj = 25C Super Junction ID = 143A @ Tc = 25C MOSFET Power Module Application AC and DC motor control VBUS NTC2 Switched Mode Power Supplies VBUS SENSE Power Factor Correction CR1 Features - Ultra low RDSon OUT- Low Miller capacitance Q2- Ultra low gate charge -

 0.422. Size:230K  microsemi
aptm120u10scavg.pdf

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APTM120U10SCAVG VDSS = 1200V Single switch RDSon = 100m typ @ Tj = 25C Series & SiC parallel diodes ID = 116A @ Tc = 25C MOSFET Power Module D Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control DKFeatures Power MOS 7 MOSFETs - Low RDSon G - Low input and Miller capacitance - Low

 0.423. Size:102K  microsemi
apt21m100j.pdf

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APT21M100J 1000V, 21A, 0.38 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of the poly-silicon

 0.424. Size:207K  microsemi
apt28m120b2 apt28m120l.pdf

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APT28M120B2 APT28M120L 1200V, 29A, 0.53 MaxN-Channel MOSFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and

 0.425. Size:107K  microsemi
apt17m120jcu2.pdf

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APT17M120JCU2VDSS = 1200V ISOTOP Boost chopper RDSon = 680m typ @ Tj = 25C MOSFET + SiC chopper diode ID = 17A @ Tc = 25C Power module Application K AC and DC motor control Switched Mode Power Supplies Power Factor Correction D Brake switch Features Power MOS 8 MOSFET G - Low RDSon - Low input and Miller capacitance - Low gat

 0.426. Size:213K  microsemi
apt45m100j.pdf

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APT45M100J 1000V, 45A, 0.18 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of the poly-silicon

 0.427. Size:209K  microsemi
apt9m100b apt9m100s.pdf

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APT9M100B APT9M100S 1000V, 9A, 1.40 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKA proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of

 0.428. Size:116K  microsemi
apt14m100b apt14m100s.pdf

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APT14M100B APT14M100S 1000V, 14A, 0.88 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKA proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance

 0.429. Size:206K  microsemi
apt25m100j.pdf

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APT25M100J 1000V, 25A, 0.33 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of the poly-silicon

 0.430. Size:106K  microsemi
apt20m120jcu2.pdf

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APT20M120JCU2VDSS = 1200V ISOTOP Boost chopper RDSon = 560m typ @ Tj = 25C MOSFET + SiC chopper diode ID = 20A @ Tc = 25C Power module Application K AC and DC motor control Switched Mode Power Supplies Power Factor Correction D Brake switch Features Power MOS 8 MOSFET G - Low RDSon - Low input and Miller capacitance - Low gat

 0.431. Size:204K  microsemi
apt18m100b apt18m100s.pdf

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APT18M100B APT18M100S 1000V, 18A, 0.70 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKA proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance

 0.432. Size:110K  microsemi
apt4m120k.pdf

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APT4M120K 1200V, 5A, 3.80 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. TO-220A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of the poly-si

 0.433. Size:298K  microsemi
aptm100h45sctg.pdf

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APTM100H45SCTG Full bridge VDSS = 1000V RDSon = 450m typ @ Tj = 25C Series & SiC parallel diodes ID = 18A @ Tc = 25C MOSFET Power Module Application Motor control VBUS Switched Mode Power Supplies Uninterruptible Power Supplies CR1A CR3AFeatures CR1B CR3B Power MOS 7 MOSFETs Q1 Q3- Low RDSon G1 G3- Low input and Miller capacitance OUT

 0.434. Size:281K  microsemi
aptm100a13scg.pdf

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APTM100A13SCG VDSS = 1000V Phase leg RDSon = 130m typ @ Tj = 25C Series & SiC parallel diodes ID = 65A @ Tc = 25C MOSFET Power Module Application Motor control VBUS Switched Mode Power Supplies Uninterruptible Power Supplies Q1Features G1 Power MOS 7 MOSFETs OUT- Low RDSon S1- Low input and Miller capacitance - Low gate charge Q2

 0.435. Size:300K  microsemi
aptc60am18scg.pdf

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APTC60AM18SCG Phase leg VDSS = 600V Series & SiC parallel diodes RDSon = 18m max @ Tj = 25C Super Junction ID = 143A @ Tc = 25C MOSFET Power Module Application VBUS Motor control Switched Mode Power Supplies Uninterruptible Power Supplies Q1Features G1 OUTS1- Ultra low RDSon - Low Miller capacitance - Ultra low gate charge Q2-

 0.436. Size:115K  microsemi
apt6m100k.pdf

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APT6M100K 1000V, 6A, 2.50 MAXN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of the poly-silicon ga

 0.437. Size:574K  russia
m13v-30-6.pdf

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01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail: mail@electrum-av.com, www.electrum-av.com 2 1. ...

 0.438. Size:574K  russia
m13b-1-6-pp4.pdf

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01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail: mail@electrum-av.com, www.electrum-av.com 2 1. ...

 0.439. Size:574K  russia
m13b-30-12.pdf

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01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail: mail@electrum-av.com, www.electrum-av.com 2 1. ...

 0.440. Size:503K  russia
tm10a tm10b tm10v tm10g.pdf

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 0.441. Size:574K  russia
m13b-50-12.pdf

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01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail: mail@electrum-av.com, www.electrum-av.com 2 1. ...

 0.442. Size:574K  russia
m13v-50-6.pdf

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01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail: mail@electrum-av.com, www.electrum-av.com 2 1. ...

 0.443. Size:574K  russia
m13a-10-6.pdf

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01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail: mail@electrum-av.com, www.electrum-av.com 2 1. ...

 0.444. Size:574K  russia
m13ma-10-6.pdf

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01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail: mail@electrum-av.com, www.electrum-av.com 2 1. ...

 0.445. Size:574K  russia
m13a-50-6.pdf

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01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail: mail@electrum-av.com, www.electrum-av.com 2 1. ...

 0.446. Size:574K  russia
m13a-10-12.pdf

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01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail: mail@electrum-av.com, www.electrum-av.com 2 1. ...

 0.447. Size:574K  russia
m13mb-10-6.pdf

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01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail: mail@electrum-av.com, www.electrum-av.com 2 1. ...

 0.448. Size:574K  russia
m13b-30-6.pdf

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01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail: mail@electrum-av.com, www.electrum-av.com 2 1. ...

 0.449. Size:574K  russia
m13a-1-6-pp4.pdf

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01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail: mail@electrum-av.com, www.electrum-av.com 2 1. ...

 0.450. Size:574K  russia
m13b-10-12.pdf

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01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail: mail@electrum-av.com, www.electrum-av.com 2 1. ...

 0.451. Size:574K  russia
m13a-30-12.pdf

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01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail: mail@electrum-av.com, www.electrum-av.com 2 1. ...

 0.452. Size:574K  russia
m13v-30-12.pdf

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01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail: mail@electrum-av.com, www.electrum-av.com 2 1. ...

 0.453. Size:574K  russia
m13v-50-12.pdf

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01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail: mail@electrum-av.com, www.electrum-av.com 2 1. ...

 0.454. Size:574K  russia
m13a-50-12.pdf

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01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail: mail@electrum-av.com, www.electrum-av.com 2 1. ...

 0.455. Size:480K  russia
m13msg-30-6.pdf

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06.02.14 13C-30-6(12).doc " " 13C-30-6(12) 13C , - IGBT- FRD (

 0.456. Size:574K  russia
m13b-50-6.pdf

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01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail: mail@electrum-av.com, www.electrum-av.com 2 1. ...

 0.457. Size:574K  russia
m13v-10-12.pdf

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01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail: mail@electrum-av.com, www.electrum-av.com 2 1. ...

 0.458. Size:574K  russia
m13a-30-6.pdf

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01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail: mail@electrum-av.com, www.electrum-av.com 2 1. ...

 0.459. Size:621K  russia
1tm115a-b-v-g 1t115a-b-v-g.pdf

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 0.460. Size:341K  russia
tm11a tm11b tm11.pdf

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 0.461. Size:459K  russia
2tm103a-b-v-g-d.pdf

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 0.462. Size:574K  russia
m13v-10-6.pdf

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01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail: mail@electrum-av.com, www.electrum-av.com 2 1. ...

 0.463. Size:480K  russia
m13msg-30-12.pdf

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06.02.14 13C-30-6(12).doc " " 13C-30-6(12) 13C , - IGBT- FRD (

 0.464. Size:574K  russia
m13b-10-6.pdf

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01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail: mail@electrum-av.com, www.electrum-av.com 2 1. ...

 0.465. Size:767K  russia
2tm104a-b-v-g 2t104a-b-v-g.pdf

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 0.466. Size:432K  cet
cem1010.pdf

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CEM1010Single N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES100V, 9.5A, RDS(ON) = 15.5m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.D D D DSurface mount Package.8 7 6 5SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise not

 0.467. Size:406K  cet
cem101.pdf

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CEM1010Single N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES100V, 9.5A, RDS(ON) = 15.5m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.D D D DSurface mount Package.8 7 6 5SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise not

 0.468. Size:238K  gdr
sm103 sm104.pdf

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 0.469. Size:1256K  wietron
wtm1624.pdf

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WTM1624NPN EPITAXIAL PLANAR TRANSISTORP b Lead(Pb)-Free1. BASE2. COLLECTOR3. EMITTER 123DescriptionThe WTM1624 applies to voltage regulators,SOT-89relay drivers,lamp drivers,and electrical equipment.FeaturesAdoption of FBET, MBIT processesLow collector-to-emitter saturation voltageFast switching speedLarge current capacity and wide ASOAbsolute Maximum Ratings a

 0.470. Size:336K  wietron
wtm1797.pdf

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WTM1797PNP EPITAXIAL PLANAR TRANSISTORP b Lead(Pb)-Free1. BASE2. COLLECTOR3. EMITTER 1FEATURES23* Low saturation voltage * Excellent DC current gain characteristicsSOT-89* Complements to 2SC4672MAXIMUM RATINGS (TA=25 unless otherwise noted)ParameterSymbol UnitsValueCollector-Base Voltage VCBO -50VCollector-Emitter Voltage VCEO -50 VEmitter-Base Voltage

 0.471. Size:924K  wietron
wtm1766.pdf

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WTM1766NPN EPITAXIAL PLANAR TRANSISTORP b Lead(Pb)-Free1. BASE2. COLLECTOR3. EMITTER 123SOT-89MAXIMUM RATINGS (TA=25 unless otherwise noted)ParameterSymbol UnitsValue40Collector-Base Voltage VCBO VCollector-Emitter Voltage VCEO 32 V5.0Emitter-Base Voltage VEBO VCollector Current -Continuous IC 2.0ACollector Power dissipation PC mW500Junction Temper

 0.472. Size:1149K  willsemi
wpm1485.pdf

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WPM1485 WPM1485 Single P-Channel, -12V, -7.4A, Power MOSFET Http//:www.willsemi.com V (V) Rds(on) () DS 0.016@ V =-4.5VGS -12 0.022@ V =-2.5VGS 0.032@ V =-1.8VGS DFN22-6L Descriptions D D S 6 5 4 The WPM1485 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench D technology and design to provide excellent RDS (ON) S with low

 0.473. Size:502K  willsemi
wpm1480.pdf

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WPM1480 WPM1480 Http://www.sh-willsemi.com Single P-Channel, -20 V, -1.5 A,Power Mosfet Description 3The WPM1480 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is 1suitable for use in DC-DC conversion applications. Standard 2Product WPM1480 is Pb-free. SC-70/SOT-323Features V R Typ (BR)DSS DS(on) 20

 0.474. Size:817K  willsemi
wpm1483.pdf

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WPM1483WPM1483Single P-Channel, -12V, -3.5A, Power MOSFET Http//:www.sh-willsemi.comVDS (V) Typical Rds(on) ()0.031@ VGS=4.5V-12 0.040@ VGS=2.5V0.056@ VGS=1.8VSOT-23DescriptionsThe WPM1483 is P-Channel enhancementMOS Field Effect Transistor. Uses advanced trenchtechnology and design to provide excellent RDS (ON)with low gate charge. This device is suitable f

 0.475. Size:1057K  willsemi
wpm1481.pdf

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WPM1481 WPM1481 Single P-Channel, -12V, -5.1A, Power MOSFET Http://www.sh-willsemi.com V (V) Typical Rds(on) () I (A)DS D 0.024@ V = - 4.5V -5.5 GS -12 0.032@ V = - 2.5V -4.0 GS 0.047@ V = - 1.8V -2.5 GS DFN2*2-6L Descriptions D D S 6 5 4 The WPM1481 is P-Channel enhancement MOS D Field Effect Transistor. Uses advanced trench technology and design to provi

 0.476. Size:1048K  willsemi
wnm12n65-f.pdf

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WNM12N65/WNM12N65FWNM12N65/WNM12N65F650V N-Channel MOSFETDescription FeaturesCThe WNM12N65/WNM12N65F is N-Channel 650V@TJ=25enhancement MOS Field Effect Transistor. Uses Typ.RDS(on)=0.57advanced high voltage MOSFET Process and Low gate chargedesign to provide excellent RDS (ON) with low gate 100% avalanche testedcharge. This device is suitable for use in p

 0.477. Size:635K  willsemi
wpm1488.pdf

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WPM1488WPM1488Single P-Channel, -12V, -1.4A, Power MOSFET www.sh-willsemi.comVDS (V) Typical Rds(on) () ID (A) 0.080@ VGS=4.5V -1.2 -12 0.086@ VGS=3.6V -1.0 0.105@ VGS=2.5V -1.0 SOT-323DescriptionsThe WPM1488 is P-Channel enhancementMOS Field Effect Transistor. Uses advancedtrench technology and design to provide excellentRDS (ON) with low gate charge. This de

 0.478. Size:53K  hsmc
hm112.pdf

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Spec. No. : HM200102 HI-SINCERITY Issued Date : 2001.07.30 Revised Date : 2007.03.02 MICROELECTRONICS CORP. Page No. : 1/5 HM112 NPN EPITAXIAL PLANAR TRANSISTOR SOT-89 Description The HM112 is designed for use in general purpose amplifier and low-speed switching Darlington Schematic Capplications. Absolute Maximum Ratings (T =25C) A B Maximum Temperatures

 0.479. Size:46K  hsmc
hm117.pdf

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Spec. No. : HM200101 HI-SINCERITY Issued Date : 2001.07.30 Revised Date : 2007.03.02 MICROELECTRONICS CORP. Page No. : 1/5 HM117 PNP EPITAXIAL PLANAR TRANSISTOR SOT-89 Description The HM117 is designed for use in general purpose amplifier and low-speed switching Darlington Schematic Capplications. Absolute Maximum Ratings (T =25C) A B Maximum Temperatures

 0.480. Size:558K  aosemi
aotf15b65m1.pdf

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AOTF15B65M1TM 650V, 15A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT(IGBT) technology 650V 650V breakdown voltage IC (TC=100 15AC) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.7VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficien

 0.481. Size:556K  aosemi
aot15b65m1 aob15b65m1.pdf

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AOT15B65M1/AOB15B65M1TM650V, 15A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 15A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 1.7V High efficient turn-on di/dt controllability Low VCE(SAT) enables high eff

 0.482. Size:765K  aosemi
aod5b65m1.pdf

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AOD5B65M1TM 650V, 5A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100C) 5A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25C) 1.57V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencies

 0.483. Size:114K  analog power
am1360ne.pdf

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Analog Power AM1360NEN-Channel 60V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC VDS (V) rDS(on) () ID (A)converters and power management in portable and 3 @ VGS = 10 V 0.3battery-powered products such as

 0.484. Size:100K  analog power
am1432ne.pdf

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Analog Power AM1432NEN-Channel 30V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) () ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.033 @ VGS = 10 V 5.7battery-powered products su

 0.485. Size:290K  analog power
am1323p.pdf

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Analog Power AM1323PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)150 @ VGS = -4.5V -1.3 Low thermal impedance -20190 @ VGS = -2.5V -1.1 Fast switching speed Typical Applications: SC70-3 Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLE

 0.486. Size:291K  analog power
am10p10-530d.pdf

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Analog Power AM10P10-530DP-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)530 @ VGS = -10V -6.9 Low thermal impedance -100720 @ VGS = -4.5V -6.0 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLU

 0.487. Size:401K  analog power
am1936ne.pdf

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Analog Power AM1936NEN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)90 @ VGS = 10V1.5 Low thermal impedance 30130 @ VGS = 4.5V1.3 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 0.488. Size:289K  analog power
am1370n.pdf

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Analog Power AM1370NN-Channel 180-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)1500 @ VGS = 10V0.39 Low thermal impedance 1801600 @ VGS = 4.5V0.38 Fast switching speed Typical Applications: SC70-3 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits

 0.489. Size:296K  analog power
am10p15-550d.pdf

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Analog Power AM10P15-550DP-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)550 @ VGS = -10V -7.8 Low thermal impedance -150650 @ VGS = -5.5V -7.2 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLU

 0.490. Size:367K  analog power
am1523ce.pdf

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Analog Power AM1523CEPRODUCT SUMMARYN & P-Channel 20-V (D-S) MOSFET rDS(on) (m)VDS (V) ID(A)90 @ VGS = 4.5V1.520120 @ VGS = 2.5V1.3Key Features: Key Features:200 @ VGS = -4.5V -1.0 Low r trench technology Low r trench technology DS(on)DS(on)-20370 @ VGS = -2.5V -0.5 Low thermal impedance Low thermal impedance Fast switching speed

 0.491. Size:193K  analog power
am1320n.pdf

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Analog Power AM1320NN-Channel 20V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.058 @ VGS = 4.5 V 2.0battery-powered products suc

 0.492. Size:323K  analog power
am110p06-06b.pdf

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Analog Power AM110P06-06BP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)6 @ VGS = -10V Low thermal impedance -60 -907 @ VGS = -4.5V Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM R

 0.493. Size:154K  analog power
am1340n.pdf

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Analog Power AM1340NN-Channel 40V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.086 @ VGS = 10 V 1.7battery-powered products such

 0.494. Size:296K  analog power
am10p20-690d.pdf

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Analog Power AM10P20-690DP-Channel 200-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)900 @ VGS = -10V -6.0 Low thermal impedance -200950 @ VGS = -5.5V -5.9 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOL

 0.495. Size:97K  analog power
am1541ce.pdf

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Analog Power AM1541CEThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) () ID (A)dissipation. Typical applications are DC-DC 140 @ V = 10V 1.2GSconverters and power management in portable and 40battery-powered products such as computers, 190 @

 0.496. Size:70K  analog power
am10n30-600i.pdf

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Analog Power AM10N30-600IN-Channel 300-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) (m) ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 600 @ VGS = 10V 7.5converters and power management in portable and 300900 @ VGS = 5.5V 6.1

 0.497. Size:271K  analog power
am12n65pcfm.pdf

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Analog Power AM12N65PCFMN-Channel 650-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)800 @ VGS = 10V7 Low thermal impedance 650850 @ VGS = 6V6.5 Fast switching speed Typical Applications: Power Supplies Motor Drives Consumer Electronics ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTH

 0.498. Size:254K  analog power
am1321p.pdf

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Analog Power AM1321PP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A)dissipation. Typical applications are DC-DC 0.079 @ VGS = -4.5V -1.7converters and power management in portable and -20battery-powered produc

 0.499. Size:292K  analog power
am10p10-530i.pdf

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Analog Power AM10P10-530IP-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)530 @ VGS = -10V -7.9 Low thermal impedance -100720 @ VGS = -4.5V -6.8 Fast switching speed Typical Applications: TO-251 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuit

 0.500. Size:292K  analog power
am110n06-08p.pdf

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Analog Power AM110N06-08PN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)8 @ VGS = 10V Low thermal impedance 60110a13 @ VGS = 4.5V Fast switching speed Typical Applications: White LED boost converters Automotive Systems DRAIN connected Industrial DC/DC Conversion Circuits

 0.501. Size:64K  analog power
am1433pe.pdf

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Analog Power AM1433PEP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A)dissipation. Typical applications are DC-DC 0.064 @ VGS = -10V -4.1converters and power management in portable and -30battery-powered produc

 0.502. Size:135K  analog power
am1421p.pdf

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Analog Power AM1421PP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A)dissipation. Typical applications are DC-DC 0.079 @ VGS = -4.5V -3.7converters and power management in portable and -20battery-powered produc

 0.503. Size:287K  analog power
am12n65p.pdf

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Analog Power AM12N65PN-Channel 650-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)800 @ VGS = 10V Low thermal impedance 65012a850 @ VGS = 6V Fast switching speed Typical Applications: White LED boost converters Automotive Systems DRAIN connected Industrial DC/DC Conversion Circuits

 0.504. Size:284K  analog power
am1400ne.pdf

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Analog Power AM1400NEN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)1100 @ VGS = 10V1 Low thermal impedance 1501200 @ VGS = 4.5V0.9 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI

 0.505. Size:93K  analog power
am1922ne.pdf

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Analog Power AM1922NEN-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) (m) ID (A)rDS(on) and to ensure minimal power loss and heat 88 @ VGS = 4.5V 1.6dissipation. Typical applications are DC-DC 20converters and power management in portable and 120 @ VGS = 2.5V 1.3batt

 0.506. Size:123K  analog power
am1331p.pdf

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Analog Power AM1331PP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A)dissipation. Typical applications are DC-DC 0.112 @ VG = -10V -1.5converters and power management in portable and S-30battery-powered produ

 0.507. Size:364K  analog power
am1561ce.pdf

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Analog Power AM1561CEPRODUCT SUMMARYN & P-Channel 60-V (D-S) MOSFET rDS(on) (m)VDS (V) ID (A)250 @ VGS = 10V0.960330 @ VGS = 4.5V0.8Key Features: Key Features:700 @ VGS = -10V -0.6 Low r trench technology Low r trench technology DS(on)DS(on)-60800 @ VGS = -4.5V -0.5 Low thermal impedance Low thermal impedance Fast switching speed

 0.508. Size:374K  analog power
am1580ce.pdf

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Analog Power AM1580CEPRODUCT SUMMARYN & P-Channel 80-V (D-S) MOSFETrDS(on) (m)VDS (V) ID (A)740 @ VGS = 10V0.5280810 @ VGS = 4.5V0.50Key Features: 3300 @ VGS = -10V -0.25 Low r trench technology DS(on)-803400 @ VGS = -4.5V -0.24 Low thermal impedance Fast switching speed SC70-6 Typical Applications: LED Inverter Circuits DC/DC Conver

 0.509. Size:408K  analog power
am1925pe.pdf

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Analog Power AM1925PEP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)160 @ VGS = -4.5V -1.2 Low thermal impedance -20210 @ VGS = -2.5V -1.1 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MA

 0.510. Size:289K  analog power
am1960ne.pdf

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Analog Power AM1960NEDual N-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) ()VDS (V) ID (A) Low r trench technology DS(on)2 @ VGS = 10V0.32 Low thermal impedance 603 @ VGS = 4.5V0.26 Fast switching speed Typical Applications: DC/DC Conversion Circuits Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTHERWISE NOTED)

 0.511. Size:154K  analog power
am1330n.pdf

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Analog Power AM1330NN-Channel 30V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.058 @ VGS = 10 V 2.0battery-powered products such

 0.512. Size:143K  analog power
am1430n.pdf

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Analog Power AM1430NN-Channel 30V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.058 @ VGS = 10 V 4.3battery-powered products such

 0.513. Size:374K  analog power
am1590ce.pdf

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Analog Power AM1590CEPRODUCT SUMMARYN & P-Channel 100-V (D-S) MOSFETrDS(on) ()VDS (V) ID (A)1.2 @ VGS = 10V0.421001.5 @ VGS = 4.5V0.37Key Features: 5.5 @ VGS = -10V -0.20 Low r trench technology DS(on)-1006 @ VGS = -4.5V -0.19 Low thermal impedance Fast switching speed SC70-6 Typical Applications: LED Inverter Circuits DC/DC Conversi

 0.514. Size:305K  analog power
am1963pe.pdf

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Analog Power AM1963PEDual P-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)700 @ VGS = -10V -0.57 Low thermal impedance -60860 @ VGS = -4.5V -0.52 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSO

 0.515. Size:182K  analog power
am1420n.pdf

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Analog Power AM1420NN-Channel 20V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.058 @ VGS = 4.5 V 4.3battery-powered products suc

 0.516. Size:143K  analog power
am1440n.pdf

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Analog Power AM1440NN-Channel 40V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.086 @ VGS = 10 V 3.5battery-powered products such

 0.517. Size:53K  analog power
am1434n.pdf

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Analog Power AM1434NN-Channel 30V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) () ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.035 @ VGS = 4.5 V 5.5battery-powered products su

 0.518. Size:135K  analog power
am1431p.pdf

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Analog Power AM1431PP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A)dissipation. Typical applications are DC-DC 0.112 @ VGS = -10V -3.1converters and power management in portable and -30battery-powered product

 0.519. Size:94K  analog power
am1535ce.pdf

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Analog Power AM1535CEThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) () ID (A)dissipation. Typical applications are DC-DC 0.09 @ V = 4.5V 1.5GSconverters and power management in portable and 30battery-powered products such as computers, 0.18

 0.520. Size:325K  analog power
am110p08-11b.pdf

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Analog Power AM110P08-11BP-Channel 80-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)11.2 @ VGS = -10V Low thermal impedance -80-110a14.5 @ VGS = -5.5V Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE

 0.521. Size:292K  analog power
am10p20-1400d.pdf

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Analog Power AM10P20-1400DP-Channel 200-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)1400 @ VGS = -10V -4.9 Low thermal impedance -2001600 @ VGS = -5.5V -4.6 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits AB

 0.522. Size:356K  analog power
am1537ce.pdf

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Analog Power AM1537CEPRODUCT SUMMARYN & P-Channel 30-V (D-S) MOSFETrDS(on) (m)VDS (V) ID (A)90 @ VGS = 10V1.530130 @ VGS = 4.5V1.2Key Features: 190 @ VGS = -10V1.0 Low r trench technology DS(on)-30290 @ VGS = -4.5V0.8 Low thermal impedance Fast switching speed SC70-6 Typical Applications: DC/DC Conversion Power Routing Moto

 0.523. Size:103K  samhop
stm121n.pdf

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GrPPrPPSTM121NaS mHop Microelectronics C orp.Ver 1.1Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m ) MaxRugged and reliable.155 @ VGS=10VSuface Mount Package.100V 2.8A192 @ VGS=4.5V5 4D2 G 26D2 3S 2D1 7 2 G 1SO-88 1D1 S 11(TA=25C unless other

 0.524. Size:123K  samhop
stm105n.pdf

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GreenProduct STM105NaS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.100V 6A 31 @ VGS=10VSuface Mount Package.SO-81ABSOLUTE MAXIMUM RATINGS (TA=25C unless otherwise noted)Symbol Parameter UnitsLimitVDS Drai

 0.525. Size:104K  samhop
stm122n.pdf

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GrPPrPPSTM122NaS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m ) MaxVDSS IDRugged and reliable.100 @ VGS=10VSuface Mount Package.100V 3.4A125 @ VGS=4.5VD2 5 4 G 26D2 3S 2D1 7 2G 1SO-8D1 8 1S 11(TA=25C unless othe

 0.526. Size:179K  samhop
stm101n.pdf

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GreenProduct STM101NaS mHop Microelectronics C orp.Ver1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) TypVDSS IDRugged and reliable.170 @ VGS=10VSuface Mount Package.100V 3A260 @ VGS=4.5VS O-81C(TA=25 unless otherwise noted)ABSOLUTE MAXIMUM RATINGSSymbol Parameter

 0.527. Size:134K  samhop
stm102d.pdf

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GPPSTM102DaS mHop Microelectronics C orp.Ver 1.0Dual Enhancement Mode Field Effect Transistor (N and P Channel)PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID VDSS ID216 @ VGS=10V 547 @ VGS=-10V100V 2.0A-100V -1.3A328 @ VGS=4.5V 614 @ VGS=-4.5VD2 5 4 G 26D2 3 S 2D1 7 2G 1SO-8D1 8 1S 11(TC=25C unl

 0.528. Size:417K  silikron
ssfm1022.pdf

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SSFM1022Main Product Characteristics: VDSS 100V SSFT3906SSFT3906SSFM1022SSFM1022RDS(on) 19mohmID 40A Marking and pin Schematic diagramFeatures and Benefits: TO220Assignment Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching a

 0.529. Size:1403K  nell
nsgm150gb120b.pdf

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SEMICONDUCTOR48.525 25C2E1 E2 C13-M693+0.3 4- 6.5108+0.514 14 14 2.84-0.5All dimensions in millimeters271517.848+0.362.5+0.5G1 E1E2 G230.930.522.5SEMICONDUCTORRoHS RoHS SEMICONDUCTORSEMICONDUCTORSEMICONDUCTORSEMICONDUCTOR

 0.530. Size:350K  nell
nsgm100gb120.pdf

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RoHS NSGM100GB Series RoHS SEMICONDUCTORIGBT Module (2 in one-package), 100A Features1. High frequency operation2. Low losses and soft switching3. Isolated baseplate for easy heat sinking 4. Discrete super-fast recovery free-wheel diode5. Small temperature dependence of the turn-off switching loss40+0.5 3-M5.0 Typical Applications23+0.5 23+0.5AC Motor ControlDC Motor

 0.531. Size:261K  sino
sm1c02nsu.pdf

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SM1C02NSUN-Channel Enhancement Mode MOSFETFeatures Pin Description 120V/50A,D RDS(ON)= 22m (max.) @ VGS= 10VS Reliable and RuggedG Lead Free and Green Devices Available (RoHS Compliant)Top View of TO-252-3D (2)ApplicationsG (1) Power Management in TV Converter. DC-DC Converter.S (3)N-Channel MOSFETOrdering and Marking InformationPackage CodeSM1C02NS

 0.532. Size:152K  sino
sm1c02nsf.pdf

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SM1C02NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 120V/50A, RDS(ON)= 22m(max.) @ VGS= 10V Reliable and RuggedS Lead Free and Green Devices AvailableDG (RoHS Compliant)Top View of TO-220D (2)Applications High Efficiency Synchronous Rectification inG (1) SMPS. Uninterruptible Power Supply. Hard Switched and High Frequency Circui

 0.533. Size:269K  sino
sm1a40csq.pdf

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SM1A40CSQDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N Channel100V/2.3A, D2D1D2D1RDS(ON) = 162m (max.) @ VGS = 10VG2RDS(ON) = 182m (max.) @ VGS = 4.5VS2S1G1RDS(ON) = 203m (max.) @ VGS = 4.0V P Channel Top View of DFN3x3C-8-100V/-1.6A,RDS(ON) = 350m (max.) @ VGS =-10V (8) (7) (6) (5)D1 D1 D2 D2RDS(ON) = 405m (max.) @ VGS =-4.5V

 0.534. Size:260K  sino
sm1f14nskp.pdf

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SM1F14NSKP N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 150V/18A,DDDRDS(ON)=70m (max.) @ VGS=10V 100% UIS + Rg TestedGPin 1S Reliable and Rugged SS Lead Free and Green Devices AvailableDFN5x6A-8_EP(RoHS Compliant)(5,6,7,8)DDDDApplications(4) G Power Management in TV Converter. DC-DC Converter.S S S( 1, 2, 3 )N-Channel MOSFET

 0.535. Size:231K  sino
sm1a54nhu.pdf

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SM1A54NHUN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 100V/50A,SRDS(ON)= 14.4m (max.) @ VGS=10V 100% UIS + Rg TestedG Reliable and RuggedTop View of TO-252-2 Lead Free and Green Devices Available(RoHS Compliant)DApplicationsG Power Management for SMPS. DC-DC Converter.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM1A5

 0.536. Size:234K  sino
sm1202nsas.pdf

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SM1202NSAS N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 30V/0.35A , RDS(ON)= 700m (max.) @ VGS=4.5VSRDS(ON)= 1000m (max.) @ VGS=2.5VGRDS(ON)= 1600m (max.) @ VGS=1.8VRDS(ON)= 5000m (max.) @ VGS=1.5VTop View of SOT-723 Reliable and RuggedD Lead Free and Green Devices Available(RoHS Compliant) ESD ProtectionGApplications High Speed Switching.

 0.537. Size:234K  sino
sm1a50nhf.pdf

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SM1A50NHFN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/200A a,RDS(ON)= 3.2m (max.) @ VGS=10V 100% UIS + Rg TestedSD Reliable and RuggedG Lead Free and Green Devices AvailableTop View of TO-220(RoHS Compliant)DApplicationsG Synchronous Rectification. Power Management in Inverter Systems. Motor Driver. Uninterruptible Power Supply.SN-

 0.538. Size:150K  sino
sm1a11nsub.pdf

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SM1A11NSUB N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/24A, RDS(ON)= 45m (Max.) @ VGS=10VS Reliable and RuggedDG Lead Free and Green Devices AvailableTop View of TO-251(RoHS Compliant) 100% UIS + Rg TestedDApplicationsG High Speed Switching. High Voltage Synchronous Rectification forS Industrial Application.N-Channel MOS

 0.539. Size:266K  sino
sm1a25nsv.pdf

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SM1A25NSVN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 100V/3.3A, RDS(ON)= 162m (max.) @ VGS= 10VG RDS(ON)= 180m (max.) @ VGS= 4.5VDS Reliable and Rugged Lead Free and Green Devices AvailableTop View SOT-223 (RoHS Compliant)D (2)ApplicationsG (1) Power Management in DC/DC Converter.S (3)N-Channel MOSFETOrdering and Marking InformationPackag

 0.540. Size:263K  sino
sm1a23dsk.pdf

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SM1A23DSK Dual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1D1D2 100V/3.5A,D2 RDS(ON)= 100m (max.) @ VGS= 10V RDS(ON)= 110m (max.) @ VGS= 4.5VS1G1 ESD protectedS2G2 Reliable and RuggedTop View of SOP-8 Lead Free and Green Devices Available (RoHS Compliant)D1 D1 D2 D2Applications Power Management in DC/DC Converter.G1 G2S1 S2N-Chann

 0.541. Size:261K  sino
sm1a11nsu.pdf

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SM1A11NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/24A,Drain 4 RDS(ON)= 45m (Max.) @ VGS=10V3Source2 Reliable and Rugged1Gate Lead Free and Green Devices Available(RoHS Compliant)Top View of TO-252-3DApplicationsG High Speed Switching. High Voltage Synchronous Rectification forS Industrial Application.N-Channel MOSFETOrderi

 0.542. Size:263K  sino
sm1f01nf.pdf

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SM1F01NFN-Channel Enhancement Mode MOSFETFeatures Pin Description 150V/80A, RDS(ON)= 16m (max.) @ VGS= 10V Reliable and RuggedSDG Lead Free and Green Devices AvailableTop View of TO-220(RoHS Compliant)DApplicationsG Synchronous Rectification. Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM1F01N

 0.543. Size:276K  sino
sm1a16psv.pdf

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SM1A16PSV P-Channel Enhancement Mode MOSFETFeatures Pin Configuration -100V/-2.5A,RDS(ON)=205m (max.) @ VGS=-10VGRDS(ON)=260m (max.) @ VGS=-4.5VDS Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-223(RoHS Compliant)DApplicationsG Power Management in Desktop Computer orDC/DC Converters.SP-Channel MOSFETOrdering and Marking Informa

 0.544. Size:270K  sino
sm1a23nsv.pdf

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SM1A23NSVN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/4.2A, RDS(ON)= 100m (max.) @ VGS= 10VG RDS(ON)= 110m (max.) @ VGS= 4.5VDS Reliable and Rugged Lead Free and Green Devices AvailableTop View SOT-223 (RoHS Compliant)D (2)ApplicationsG (1) Power Management in DC/DC Converter.S (3)N-Channel MOSFETOrdering and Marking InformationPackage C

 0.545. Size:158K  sino
sm1a16psu sm1a16pub.pdf

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SM1A16PSU/UB P-Channel Enhancement Mode MOSFETFeatures Pin Configuration -100V/-13A,DRDS(ON)=205m (max.) @ VGS=-10VSRDS(ON)=300m (max.) @ VGS=-4VSDG Reliable and RuggedG Lead Free and Green Devices AvailableTop View of TO-252-2 Top View of TO-251(RoHS Compliant) 100% UIS + Rg Tested DGApplications Power Management in Desktop Computer orDC/DC Conve

 0.546. Size:266K  sino
sm1a20nsu.pdf

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SM1A20NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/40A,Drain 4 RDS(ON)= 28m (Max.) @ VGS=10V3Source2 RDS(ON)= 32m (Max.) @ VGS=4.5V1Gate Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-3 (RoHS Compliant)DApplicationsG Power Management in DC/DC Converter.SN-Channel MOSFETOrdering and Marking Informa

 0.547. Size:237K  sino
sm1102psf.pdf

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SM1102PSFP-Channel Enhancement Mode MOSFETFeatures Pin Description -100V/-27A,RDS(ON)= 42m (Max.) @ VGS=-10VRDS(ON)= 52m (Max.) @ VGS=-4.5VSD Reliable and RuggedG Lead Free and Green Devices Available Top View of TO-220(RoHS Compliant)SApplicationsG Power Management in DC/DC Converters andBattery Powered SystemDP-Channel MOSFETOrdering and Marking Inf

 0.548. Size:261K  sino
sm1a12dsk.pdf

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SM1A12DSK Dual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1D1D2 100V/3.5A,D2 RDS(ON)= 101m (max.) @ VGS= 10V RDS(ON)= 114m (max.) @ VGS= 4.5VS1G1 ESD protecedS2G2 Reliable and RuggedTop View of SOP-8 Lead Free and Green Devices Available (RoHS Compliant)D1 D1 D2 D2Applications Power Management in DC/DC Converter.G1 G2S1 S2N-Channe

 0.549. Size:586K  sino
apm1106k.pdf

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APM1106K Dual Enhancement Mode MOSFET (N- and P-Channel)Features Pin DescriptionD1 N-ChannelD1D2D2100V/2A,RDS(ON) = 220m (max.) @ VGS = 10VS1RDS(ON) = 310m (max.) @ VGS = 4VG1S2 P-ChannelG2-100V/-2A,Top View of SOP-8RDS(ON) = 225m (max.) @ VGS = -10VRDS(ON) = 315m (max.) @ VGS = -4V(8) (7) (6) (5)D1 D1 D2 D2 Super High Dense Cell Design

 0.550. Size:233K  sino
sm1a30nsu.pdf

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SM1A30NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/18A, D RDS(ON)= 70m (max.) @ VGS= 10VS RDS(ON)= 80m (max.) @ VGS= 4.5VG 100% UIS + Rg Tested Reliable and RuggedTop View of TO-252-2 Lead Free and Green Devices AvailableD (RoHS Compliant)ApplicationsG Power Management in DC/DC Converter. For LED Backlight DC-DC Boost ConverterS So

 0.551. Size:235K  sino
sm1a01nsf.pdf

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SM1A01NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/53A,RDS(ON)=22m (max.) @ VGS=10V Reliable and RuggedSD Lead Free and Green Devices AvailableG(RoHS Compliant)Top View of TO-220DApplications Power Management in TV Inverter.GSN-Channel MOSFETOrdering and Marking InformationPackage CodeSM1A01NS F : TO-220Assembly MaterialOper

 0.552. Size:168K  sino
sm1a32nsu.pdf

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SM1A32NSUN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/34A,Drain 4 RDS(ON)= 29m(max.) @ VGS= 10V RDS(ON)= 34m(max.) @ VGS= 4.5V 3 Source2 Reliable and Rugged1 Gate Lead Free and Green Devices Available (RoHS Compliant)Top View of TO-252-3DApplicationsG For telecom PSE solution.SN-Channel MOSFETOrdering and Marking InformationPac

 0.553. Size:213K  sino
sm1a40csk.pdf

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SM1A40CSKDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N ChannelD1D1D2100V/2.5A,D2RDS(ON) = 155m (max.) @ VGS = 10VRDS(ON) = 175m (max.) @ VGS = 4.5VS1G1RDS(ON) = 195m (max.) @ VGS = 4.0VS2G2 P ChannelTop View of SOP-8-100V/-1.7A,RDS(ON) = 345m (max.) @ VGS =-10V (8) (7) (6) (5)D1 D1 D2 D2RDS(ON) = 400m (max.)

 0.554. Size:168K  sino
sm1a00nsg.pdf

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SM1A00NSG N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 100V/180Aa, RDS(ON)= 4m (Max.) @ VGS=10VS Reliable and RuggedG Lead Free and Green Devices Available Top View of TO-263-3(RoHS Compliant)DApplicationsG Synchronous Rectification. Power Management in Inverter Systems. Motor Driver. Uninterruptible Power Supply.SN-Cha

 0.555. Size:152K  sino
sm1a63nhk.pdf

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SM1A63NHKN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 100V/12A, DD RDS(ON)= 10.5m(max.) @ VGS= 10V RDS(ON)= 13.3m(max.) @ VGS= 4.5VSS 100% UIS + Rg TestedSG Reliable and RuggedTop View of SOP-8 Lead Free and Green Devices Available (RoHS Compliant)(5,6,7,8)D D DDApplications Power Management for SMPS.(4) G DC-DC Converter.

 0.556. Size:138K  sino
sm1a01nsfp.pdf

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SM1A01NSFPN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/25A,RDS(ON)=22m (max.) @ VGS=10V Reliable and RuggedSDG Lead Free and Green Devices Available(RoHS Compliant) Top View of TO-220FPDApplicationsG Converter Application in LED TV.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM1A01NS FP : TO-220FPAssembly Mat

 0.557. Size:246K  sino
sm1f00nsf.pdf

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SM1F00NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 150V/108A, RDS(ON)= 10.5m (max.) @ VGS= 10V Reliable and RuggedSD Lead Free and Green Devices Available G(RoHS Compliant)Top View of TO-220DApplicationsG Synchronous Rectification. Uninterruptible Power Supply. Montion Control Applications.SN-Channel MOSFETOrdering and Marking Informatio

 0.558. Size:290K  sino
sm1a06nskp.pdf

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SM1A06NSKP N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 100V/52A, DDDRDS(ON)=17.5m (Max.) @ VGS=10V Reliable and RuggedGPin 1SS Lead Free and Green Devices AvailableS(RoHS Compliant)DFN5x6-8(5,6,7,8)DDDDApplications DC-DC Converter.(4) G Motor Control.S S S( 1, 2, 3 )N-Channel MOSFETOrdering and Marking InformationPackage C

 0.559. Size:233K  sino
sm1200nsas.pdf

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SM1200NSAS N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 60V/0.2A , RDS(ON)=2.2 (max.) @ VGS=10VS RDS(ON)=2.6 (max.) @ VGS=4.5VG ESD Protection : HBM=(+/-)1600V MM=(+/-)100VTop View of SOT-723 Lead Free and Green Devices AvailableD Reliable and Rugged(RoHS Compliant)Applications G High Speed and Analog Switching Applications Low voltage drive (

 0.560. Size:149K  sino
sm1f04nsfp.pdf

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SM1F04NSFPN-Channel Enhancement Mode MOSFETFeatures Pin Description 150V/58A, RDS(ON)= 13.5m(max.) @ VGS= 10V Reliable and Rugged Lead Free and Green Devices AvailableSD (RoHS Compliant)G 100% UIS + Rg TestedTop View of TO-220FPDApplicationsG Synchronous Rectification. Montion Control Applications.SN-Channel MOSFETOrdering and Marking Information

 0.561. Size:234K  sino
sm1a53nhub.pdf

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SM1A53NHUBN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/70A, RDS(ON)= 10m (max.) @ VGS= 10V 100% UIS + Rg TestedSD Reliable and RuggedG Lead Free and Green Devices AvailableTop View of TO-251 (RoHS Compliant)D (2)ApplicationsG (1) Power Management for SMPS. DC-DC Converter.S (3)N-Channel MOSFETOrdering and Marking InformationPackage

 0.562. Size:173K  sino
sm1a35psu.pdf

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SM1A35PSUP-Channel Enhancement Mode MOSFETFeatures Pin Description -100V/-18A,Drain 4 RDS(ON)= 90m(max.) @ VGS=-10V3 SourceRDS(ON)= 102m(max.) @ VGS=-4.5V 21 Gate Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-3(RoHS Compliant) 100% UIS TestedD ESD Protection HBM ESD protection level pass 8KVNote : The diode connected betw

 0.563. Size:247K  sino
sm1a11nsf.pdf

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SM1A11NSF N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/24A, RDS(ON)= 45m (Max.) @ VGS=10V Reliable and RuggedSD Lead Free and Green Devices Available G(RoHS Compliant) Top View of TO-220DApplicationsG High Speed Switching. High Voltage Synchronous Rectification forS Industrial Application.N-Channel MOSFET Fully Avalanche Rated.Ordering

 0.564. Size:149K  sino
sm1f12nsub.pdf

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SM1F12NSUB N-Channel Enhancement Mode MOSFETFeatures Pin Description 150V/35A, RDS(ON)= 38m(max.) @ VGS= 10VS 100% UIS + Rg TestedDG Reliable and RuggedTop View of TO-251 Lead Free and Green Devices Available (RoHS Compliant)DApplicationsG Power Management in TV Converter. DC-DC Converter.SN-Channel MOSFETOrdering and Marking InformationPackage C

 0.565. Size:149K  sino
sm1a02nsfp.pdf

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SM1A02NSFPN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/90A, RDS(ON)= 7.2m(max.) @ VGS= 10V Reliable and RuggedSDG Lead Free and Green Devices Available(RoHS Compliant)Top View of TO-220FP 100% UIS + Rg TestedDApplicationsG Synchronous Rectification Power Management in Inverter Systems Motor DriverSN-Channel MOSFETOrd

 0.566. Size:539K  sino
sm1a15psf.pdf

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SM1A15PSF P-Channel Enhancement Mode MOSFETFeatures Pin Configuration -100V/-16A,RDS(ON)=105m (max.) @ VGS=-10V Super High Dense Cell DesignS Reliable and RuggedDG Lead Free and Green Devices Available (RoHS Compliant) Top View of TO-220DApplicationsG Application for Welding Machine.SP-Channel MOSFETOrdering and Marking InformationPackage CodeSM1A15P

 0.567. Size:234K  sino
sm1a54nhfp.pdf

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SM1A54NHFPN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/42A,RDS(ON)= 14.4m (max.) @ VGS=10V 100% UIS + Rg TestedSD Reliable and RuggedG Lead Free and Green Devices AvailableTop View of TO-220FP(RoHS Compliant)DApplicationsG High Efficiency Synchronous Rectification in SMPS. Uninterruptible Power Supply. Hard Switched and High Frequency

 0.568. Size:153K  sino
sm1f14nsfp.pdf

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SM1F14NSFPN-Channel Enhancement Mode MOSFETFeatures Pin Description 150V/18A, RDS(ON)= 70m(max.) @ VGS= 10V Reliable and RuggedS Lead Free and Green Devices AvailableDG (RoHS Compliant) 100% UIS + Rg TestedTop View of TO-220FPDApplicationsG DC-DC Converter Switching for Networkong. General Purpose Switching.SN-Channel MOSFETOrdering and Marking Inf

 0.569. Size:545K  sino
sm1a01nsu.pdf

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SM1A01NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/35A,D RDS(ON)=25m (Max.) @ VGS=10VS RDS(ON)=40m (Max.) @ VGS=5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-3(RoHS Compliant)DApplicationsG Power Management in TV Converter. DC-DC Converter.SN-Channel MOSFETOrdering and Marking Info

 0.570. Size:249K  sino
sm1f33psu.pdf

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SM1F33PSUP-Channel Enhancement Mode MOSFETFeatures Pin Description -150V/-10A,DRDS(ON)= 290m (max.) @ VGS=-10VS 100% UIS + Rg Tested Reliable and Rugged G Lead Free and Green Devices AvailableTop View of TO-252-2 (RoHS Compliant)DApplications Power Management for Industrial DC / DCG Converters. Load switch.SP-Channel MOSFETOrdering and Marking Informa

 0.571. Size:815K  sino
apm1110nu apm1110nub.pdf

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APM1110NU/APM1110NUBN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/10A,D RDS(ON)= 175m (max.) @ VGS=10VS RDS(ON)= 235m (max.) @ VGS=4.5VSDG ESD Protected G Reliable and RuggedTop View of TO-251Top View of TO-252-3 Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in TV Inverter.SN-Chan

 0.572. Size:237K  sino
sm1600dscs.pdf

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SM1660DSCS Dual N-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/0.26A,S2 RDS(ON)= 2.2 (max.) @ VGS=10VG2D2 RDS(ON)= 2.6 (max.) @ VGS=4.5VD1G1S1 Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-363(RoHS Compliant)(6)D1(3)D2 ESD Protection(2)(5)ApplicationsG1G2 Load switch. High-speed line driver.(1)S1(4

 0.573. Size:155K  sino
sm1a18nsqg.pdf

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SM1A18NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDD 100V/3.5A, DRDS(ON) =100m(max.) @ VGS =10VRDS(ON) =130m(max.) @ VGS =4.5VGSSS Avalanche RatedDFN3x3D-8_EP 100% UIS + Rg Tested Reliable and Rugged( 5,6,7,8 ) Lead Free and Green Devices Available D D D D(RoHS Compliant)(4)ApplicationsG DC-DC Conversion Networking Swit

 0.574. Size:261K  sino
sm1f08nsu.pdf

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SM1F08NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 150V/14A, D RDS(ON)= 110m (max.) @ VGS= 10VS Reliable and RuggedG Lead Free and Green Devices Available (RoHS Compliant) Top View of TO-252-3DApplicationsG Power Management in TV Converter. DC-DC Converter.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM1F08NS U : TO-25

 0.575. Size:262K  sino
sm1f03nsfp.pdf

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SM1F03NSFPN-Channel Enhancement Mode MOSFETFeatures Pin Description 150V/13A, RDS(ON)= 65m (max.) @ VGS= 10V RDS(ON)= 80m (max.) @ VGS= 5V Reliable and RuggedSD Lead Free and Green Devices AvailableG (RoHS Compliant)Top View of TO-220FPDApplicationsG DC-DC converter switching for Networkong General purpose switchingSN-Channel MOSFETOrdering and Markin

 0.576. Size:257K  sino
sm1a21nskp.pdf

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SM1A21NSKPN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/52A,DDDD RDS(ON)= 17.5m (max.) @ VGS= 10V RDS(ON)= 21m (max.) @ VGS= 4.5V 100% UIS + Rg TestedGS Pin 1SS Reliable and RuggedDFN5x6A-8_EP Lead Free and Green Devices Available( 5,6,7,8 ) (RoHS Compliant)D D DDApplications(4)G DC-DC Converter. Motor Control.S S S(1, 2

 0.577. Size:265K  sino
sm1a08nsv.pdf

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SM1A08NSVN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/8A, RDS(ON)= 29m (max.) @ VGS= 10VGD RDS(ON)= 32m (max.) @ VGS= 6VS Reliable and RuggedTop View SOT-223 Lead Free and Green Devices Available (RoHS Compliant)DApplications LED Application SystemG Networking Application System Power Management in TV InverterSN-Channel MOSFETOrdering

 0.578. Size:232K  sino
sm1a53nhu.pdf

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SM1A53NHUN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/70A,D RDS(ON)= 10m (max.) @ VGS= 10VS 100% UIS + Rg TestedG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-2 (RoHS Compliant)D (2)ApplicationsG (1) Power Management for SMPS. DC-DC Converter.S (3)N-Channel MOSFETOrdering and Marking InformationPackag

 0.579. Size:270K  sino
sm1f02nsu.pdf

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SM1F02NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 150V/35A, D RDS(ON)= 46m (max.) @ VGS= 10VS RDS(ON)= 52m (max.) @ VGS= 6VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-3 (RoHS Compliant)DApplicationsG Power Management in TV Converter. DC-DC Converter.SN-Channel MOSFETOrdering and Marking InformationPa

 0.580. Size:150K  sino
sm1a20nsfp.pdf

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SM1A20NSFP N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/28A, RDS(ON)= 28m (Max.) @ VGS=10V RDS(ON)= 32m (Max.) @ VGS=4.5VSD Reliable and RuggedG Lead Free and Green Devices AvailableTop View of TO-220FP (RoHS Compliant)D 100% UIS + Rg TestedApplicationsG Power Management in DC/DC Converter. Boost Converters. Synchronous Rectif

 0.581. Size:234K  sino
sm1a23nsu.pdf

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SM1A23NSUN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/15A,D RDS(ON)= 100m (max.) @ VGS= 10VS RDS(ON)= 110m (max.) @ VGS= 4.5V 100% UIS + Rg TestedG ESD ProtectionTop View of TO-252-2 Reliable and Rugged Lead Free and Green Devices AvailableD (2) (RoHS Compliant)G (1)Applications Power Management in DC/DC Converter.S (3)N-Channel MOSF

 0.582. Size:265K  sino
sm1105nsv.pdf

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SM1105NSVN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/3.5A, RDS(ON)= 105m (max.) @ VGS= 10VG RDS(ON)= 175m (max.) @ VGS= 4.5VDS ESD proteced Reliable and RuggedTop View SOT-223 Lead Free and Green Devices Available (RoHS Compliant)DApplications Power Management in TV Inverter.GSN-Channel MOSFETOrdering and Marking InformationPackage Co

 0.583. Size:263K  sino
sm1a20nsk.pdf

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SM1A20NSKN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 100V/8A,DD RDS(ON)= 28m (max.) @ VGS= 10V RDS(ON)= 32m (max.) @ VGS= 4.5VS Reliable and RuggedSSG Lead Free and Green Devices AvailableTop View of SOP-8 (RoHS Compliant)( 5,6,7,8 )D D D DApplications(4) Power Management in DC/DC Converter.GS S S(1, 2, 3)N-Channel MOSFET

 0.584. Size:234K  sino
sm1a53nhfp.pdf

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SM1A53NHFPN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/50A,RDS(ON)=10m (max.) @ VGS=10V 100% UIS + Rg TestedSD Reliable and RuggedG Lead Free and Green Devices AvailableTop View of TO-220FP(RoHS Compliant)DApplicationsG High Efficiency Synchronous Rectification in SMPS. Uninterruptible Power Supply. Hard Switched and High Frequency Cir

 0.585. Size:263K  sino
sm1a10nsu.pdf

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SM1A10NSUN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/10A,DRDS(ON)=175m (max.) @ VGS=10VSRDS(ON)=235m (max.) @ VGS=4.5VG ESD Protected Reliable and RuggedTop View of TO-252-3 Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in TV Inverter.SN-Channel MOSFETOrdering and Marking InformationPackage C

 0.586. Size:262K  sino
sm1f03nsk.pdf

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SM1F03NSKN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 150V/5A,DD RDS(ON)= 65m (max.) @ VGS= 10V RDS(ON)= 80m (max.) @ VGS= 5VS Reliable and RuggedSSG Lead Free and Green Devices AvailableTop View of SOP-8 (RoHS Compliant)( 5,6,7,8 )D D D D(4)ApplicationsG DC-DC converter switching for Networkong General purpose switchingS S S

 0.587. Size:149K  sino
sm1a11nsfp.pdf

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SM1A11NSFP N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/20A, RDS(ON)= 45m (Max.) @ VGS=10V Reliable and RuggedSD Lead Free and Green Devices AvailableG(RoHS Compliant)Top View of TO-220FP 100% UIS + Rg TestedDApplicationsG High Efficiency Synchronous Rectification in SMPS. Uninterruptible Power Supply. Hard Switched and

 0.588. Size:162K  sino
sm1402nss.pdf

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SM1402NSS N-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/0.4A,D RDS(ON)= 2.2(max.) @ VGS=10VS RDS(ON)= 2.6(max.) @ VGS=4.5VG ESD ProtectionTop View of SC-70 Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications High Speed Switching. Analog Switching Application.SN-Channel MOSFETOrdering and Ma

 0.589. Size:158K  sino
sm1a16psu sm1a16psub.pdf

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SM1A16PSU/UB P-Channel Enhancement Mode MOSFETFeatures Pin Configuration -100V/-13A,DRDS(ON)=205m (max.) @ VGS=-10VSRDS(ON)=300m (max.) @ VGS=-4VSDG Reliable and RuggedG Lead Free and Green Devices AvailableTop View of TO-252-2 Top View of TO-251(RoHS Compliant) 100% UIS + Rg Tested DGApplications Power Management in Desktop Computer orDC/DC Conve

 0.590. Size:234K  sino
sm1a54nhf.pdf

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SM1A54NHFN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/50A,RDS(ON)= 14.4m (max.) @ VGS=10V 100% UIS + Rg TestedSD Reliable and RuggedG Lead Free and Green Devices AvailableTop View of TO-220(RoHS Compliant)DApplicationsG Power Management for SMPS. DC-DC Converter.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM1A54N

 0.591. Size:248K  sino
sm1a00nsf.pdf

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SM1A00NSF N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/180Aa, RDS(ON)= 4.2m (Max.) @ VGS=10V Reliable and RuggedSD Lead Free and Green Devices Available G(RoHS Compliant) Top View of TO-220DApplicationsG Synchronous Rectification. Power Management in Inverter Systems. Motor Driver. Uninterruptible Power Supply.SN-Channel MOSFETOrdering

 0.592. Size:305K  sino
sm1105nsub.pdf

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SM1105NSUBN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/16A,RDS(ON)= 100m (max.) @ VGS=10VSRDS(ON)= 170m (max.) @ VGS=4.5VDG ESD ProtectedTop View of TO-251 Reliable and RuggedD Lead Free and Green Devices Available(RoHS Compliant)GApplications Power Management in TV Inverter.SN-Channel MOSFETOrdering and Marking InformationPackage

 0.593. Size:253K  sino
sm1691oscs.pdf

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SM1691OSCS Single N-Channel Enhancement Mode MOSFETwith Schottky DiodeFeatures Pin Description Channel 1 (NMOS) 60V/0.26A,S2 RDS(ON)= 2.2 (max.) @ VGS=10VNCD2 RDS(ON)= 2.6 (max.) @ VGS=4.5V D1S1G1 Channel 2 (Schottky Diode) 40V/0.35A,Top View of SOT-363Vf= 0.4V(max.) @ IF=0.02A(6)D1(3)D2 Vf= 0.6V(max.) @ IF=0.2A Reliable and Rugged Lead Free and Green

 0.594. Size:265K  sino
sm1a25nsu.pdf

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SM1A25NSUN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/10A,D RDS(ON)= 162m (max.) @ VGS= 10VS RDS(ON)= 180m (max.) @ VGS= 4.5V Reliable and RuggedG Lead Free and Green Devices Available (RoHS Compliant) Top View of TO-252D (2)ApplicationsG (1) Power Management in TV Inverter.S (3)N-Channel MOSFETOrdering and Marking InformationPackage C

 0.595. Size:259K  sino
sm1a27psu.pdf

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SM1A27PSU P-Channel Enhancement Mode MOSFETFeatures Pin Configuration -100V/-11A,DRDS(ON)=205m (max.) @ VGS=-10VS Reliable and RuggedG Lead Free and Green Devices Available(RoHS Compliant)Top View of TO-252-3DApplicationsG Application for Textile Machine.SP-Channel MOSFETOrdering and Marking InformationSM1A27PSPackage Code U : TO-252-3Assembly Mater

 0.596. Size:545K  sino
apm1110k.pdf

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APM1110K N-Channel Enhancement Mode MOSFETFeatures Pin ConfigurationDDD 100V/2.7A,DRDS(ON)=140m (typ.) @ VGS=10VRDS(ON)=185m (typ.) @ VGS=4.5VSS ESD Protected SG Reliable and RuggedTop View of SOP-8 Lead Free and Green Devices Available(8, 7, 6, 5)D D D D(RoHS Compliant)Applications(4) G Power Management in TV Inverter.S S S(1, 2, 3)N-Ch

 0.597. Size:234K  sino
sm1a06nsk.pdf

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SM1A06NSKN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 100V/7A, DD RDS(ON)= 18m (max.) @ VGS= 10V 100% UIS + Rg TestedSS Reliable and Rugged SG Lead Free and Green Devices AvailableTop View of SOP-8 (RoHS Compliant)(5,6,7,8)DDDDApplications(4) G DC-DC Converter. Secondary Side Synchronous Rectification.S S S( 1, 2, 3 )N-Channel M

 0.598. Size:261K  sino
sm1f03nsu.pdf

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SM1F03NSUN-Channel Enhancement Mode MOSFETFeatures Pin Description 150V/24A,Drain 4 RDS(ON)= 65m (max.) @ VGS= 10V3 Source Reliable and Rugged2 Lead Free and Green Devices Available1 Gate (RoHS Compliant)Top View of TO-252-3DApplicationsG DC-DC converter switching for Networkong General purpose switchingSN-Channel MOSFETOrdering and Marking Informatio

 0.599. Size:234K  sino
sm1a15nsfp.pdf

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SM1A15NSFPN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/16A,RDS(ON)=44m (max.) @ VGS=10V Reliable and RuggedSD Lead Free and Green Devices AvailableG(RoHS Compliant)Top View of TO-220FPDApplicationsG DC-DC Conversion. Networking Switch.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM1A15NS FP : TO-220FPAssembly Ma

 0.600. Size:139K  sino
sm1a01nfs.pdf

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SM1A01NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/53A,RDS(ON)=22m (max.) @ VGS=10V Reliable and RuggedSD Lead Free and Green Devices AvailableG(RoHS Compliant)Top View of TO-220DApplications Power Management in TV Inverter.GSN-Channel MOSFETOrdering and Marking InformationPackage CodeSM1A01NS F : TO-220Assembly Material

 0.601. Size:152K  sino
sm1a27psub.pdf

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SM1A27PSUB P-Channel Enhancement Mode MOSFETFeatures Pin Configuration -100V/-11A,RDS(ON)= 190m (max.) @ VGS=-10VS Reliable and RuggedDG Lead Free and Green Devices AvailableTop View of TO-251(RoHS Compliant) 100% UIS + Rg TestedDApplicationsG Application for Textile Machine.SP-Channel MOSFETOrdering and Marking InformationPackage CodeSM1A27PS UB

 0.602. Size:252K  sino
sm1a52nhf.pdf

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SM1A52NHFN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/120A,RDS(ON)=4.5m (max.) @ VGS=10V 100% UIS + Rg TestedSD Reliable and RuggedG Lead Free and Green Devices AvailableTop View of TO-220(RoHS Compliant)DApplicationsG High Efficiency Synchronous Rectification in SMPS. Uninterruptible Power Supply. Hard Switched and High Frequency Circ

 0.603. Size:152K  sino
sm1a25nsub.pdf

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SM1A25NSUBN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/10A, RDS(ON)= 162m(max.) @ VGS= 10V RDS(ON)= 180m(max.) @ VGS= 4.5VS 100% UIS + Rg TestedDG Reliable and RuggedTop View of TO-251 Lead Free and Green Devices Available (RoHS Compliant)D (2)ApplicationsG (1) Power Management in TV Inverter.S (3)N-Channel MOSFETOrdering and M

 0.604. Size:260K  sino
sm1a13nsk.pdf

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SM1A13NSK N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDD 100V/7A,D RDS(ON)= 51m (max.) @ VGS= 10V RDS(ON)= 57m (max.) @ VGS= 4.5VSS ESD protecedSG Reliable and RuggedTop View of SOP-8 Lead Free and Green Devices Available( 5,6,7,8 ) (RoHS Compliant)D D DDApplications(4) Power Management in DC/DC Converter.GS S S(1, 2, 3)N-C

 0.605. Size:149K  sino
sm1a06nsfp.pdf

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SM1A06NSFP N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/40A,RDS(ON)= 17.5m (Max.) @ VGS=10V Reliable and RuggedSDG Lead Free and Green Devices Available(RoHS Compliant)Top View of TO-220FP 100% UIS + Rg TestedDApplicationsG High Efficiency Synchronous Rectification in SMPS. Uninterruptible Power Supply. Hard Switched

 0.606. Size:149K  sino
sm1a28nsub.pdf

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SM1A28NSUB N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/17A, RDS(ON)= 76m (Max.) @ VGS=10VS Reliable and RuggedDG Lead Free and Green Devices AvailableTop View of TO-251(RoHS Compliant) 100% UIS + Rg TestedDApplicationsG Application for Textile Machine.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM1A28NS

 0.607. Size:226K  sino
sm1501gsqh.pdf

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SM1501GSQH Dual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionS2 20V/0.55A ,G2 RDS(ON)= 800m (max.) @ VGS=4.5VD1D2G1RDS(ON)= 1100m (max.) @ VGS=2.5VS1RDS(ON)= 1450m (max.) @ VGS=1.8VTop View of SOT-563 Reliable and Rugged Lead Free and Green Devices Available(RoHS Compliant)(6)D1(3)D2 ESD Protection(2)(5)ApplicationsG1G2 Power Suppl

 0.608. Size:291K  sino
sm1a24nskp.pdf

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SM1A24NSKPN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/10A,DDDD RDS(ON)= 126m (max.) @ VGS= 10V RDS(ON)= 143m (max.) @ VGS= 4.5V Reliable and RuggedGS Pin 1SS Lead Free and Green Devices AvailableDFN5x6-8 (RoHS Compliant)( 5,6,7,8 )D D DD(4)ApplicationsG Power Management for Boost Converters. Synchronous Rectifiers for SMPS.

 0.609. Size:256K  sino
sm1110nsc.pdf

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SM1110NSC N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/1.7A ,SDRDS(ON)=200m (max.) @ VGS=10VDG RDS(ON)=235m (max.) @ VGS=4.5VDD ESD ProtectedTop View of SOT-23-6 Reliable and Rugged Lead Free and Green Devices Available(1,2,5,6)(RoHS Compliant)DDDDApplications(3)G Power Management in TV Inverter. DC/DC Converter.(4)SN-Channel M

 0.610. Size:290K  sino
sm1f12nskp.pdf

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SM1F12NSKPN-Channel Enhancement Mode MOSFETFeatures Pin Description 150V/32A,DDDD RDS(ON)= 38m (max.) @ VGS= 10V Reliable and RuggedG Lead Free and Green Devices AvailableS Pin 1SS (RoHS Compliant)DFN5x6-8( 5,6,7,8 )D D DDApplications Power Management in TV Converter. (4)G DC-DC Converter.S S S(1, 2, 3)N-Channel MOSFETOrdering and Marking

 0.611. Size:253K  sino
sm1c01nsfh.pdf

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SM1C01NSFHN-Channel Enhancement Mode MOSFETFeatures Pin Description 120V/120A, RDS(ON)= 8.4m (max.) @ VGS= 10V Reliable and Rugged Lead Free and Green Devices AvailableSD (RoHS Compliant)G Top View of TO-220HD (2)Applications Synchronous Rectification.G (1) Power Management in Inverter Systems. Motor Driver.S (3)N-Channel MOSFETOrdering and Marking In

 0.612. Size:262K  sino
sm1a30nsk.pdf

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SM1A30NSK N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDD 100V/5A, D RDS(ON)= 70m (Max.) @ VGS=10V RDS(ON)= 80m (Max.) @ VGS=4.5VSSS Reliable and RuggedG Lead Free and Green Devices Available Top View of SOP-8(RoHS Compliant)( 5,6,7,8 )D D DDApplications(4)G Power Management in DC/DC Converter. For LED Backlight DC-DC boost converter

 0.613. Size:158K  sino
sm1f04nsf.pdf

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SM1F04NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 150V/86A, RDS(ON)= 13.5m(max.) @ VGS= 10V Reliable and RuggedSD Lead Free and Green Devices Available G(RoHS Compliant)Top View of TO-220 100% UIS + Rg TestedDApplicationsG Synchronous Rectification. Montion Control Applications.SN-Channel MOSFETOrdering and Marking Informati

 0.614. Size:159K  sino
sm1a00nsw.pdf

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SM1A00NSW N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/180Aa, RDS(ON)= 4.2m (Max.) @ VGS=10V Reliable and RuggedSDG Lead Free and Green Devices Available(RoHS Compliant)Top View of TO-247 100% UIS + Rg TestedDApplicationsG Synchronous Rectification. Power Management in Inverter Systems. Motor Driver.S Uninterruptibl

 0.615. Size:254K  sino
sm1401pss.pdf

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SM1401PSS P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-2.8A, DRDS(ON)= 92m (Max.) @ VGS=-4.5VSRDS(ON)= 135m (Max.) @ VGS=-2.5VGRDS(ON)= 220m (Max.) @ VGS=-1.8VTop View of SC-70 Super High Dense Cell Design Reliable and RuggedD Lead Free and Green Devices Available(RoHS Compliant)GApplications Power Management in Notebook Computer,Portabl

 0.616. Size:264K  sino
sm1a08nsu.pdf

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SM1A08NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/40A,D RDS(ON)= 28m (Max.) @ VGS=10VS RDS(ON)= 31m (Max.) @ VGS=6VG Reliable and Rugged Lead Free and Green Devices Available Top View of TO-252-3 (RoHS Compliant)DApplicationsG LED Application System. Networking Application System.SN-Channel MOSFETOrdering and Marking Information

 0.617. Size:247K  sino
sm1a06nsf.pdf

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SM1A06NSF N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/60A,RDS(ON)= 17.5m (Max.) @ VGS=10V Reliable and RuggedSD Lead Free and Green Devices AvailableG(RoHS Compliant)Top View of TO-220DApplicationsG High Efficiency Synchronous Rectification in SMPS. Uninterruptible Power Supply. Hard Switched and High Frequency Circuits.SN-Channel M

 0.618. Size:260K  sino
sm1a64nhkp.pdf

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SM1A64NHKPN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/43A,DDDD RDS(ON)= 13.5m (max.) @ VGS= 10V RDS(ON)= 18.2m (max.) @ VGS= 4.5V 100% UIS + Rg Tested GPin 1SSS Reliable and RuggedDFN5x6A-8_EP Lead Free and Green Devices Available(5,6,7,8) (RoHS Compliant)D D DDApplications(4) G Power Management for SMPS Charger adaptor SR.

 0.619. Size:233K  sino
sm1f02nsf.pdf

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SM1F02NSF N-Channel Enhancement Mode MOSFETFeatures Pin Description 150V/35A, RDS(ON)= 38m (max.) @ VGS= 10V 100% UIS + Rg TestedSD Reliable and RuggedG Lead Free and Green Devices AvailableTop View of TO-220 (RoHS Compliant)DApplicationsG Power Management in TV Converter. DC-DC Converter.SN-Channel MOSFETOrdering and Marking InformationPackage Code

 0.620. Size:236K  sino
sm1a63nhub.pdf

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SM1A63NHUBN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/73A, RDS(ON)= 9.6m (max.) @ VGS= 10V RDS(ON)= 12.4m (max.) @ VGS= 4.5VS 100% UIS + Rg TestedDG Reliable and RuggedTop View of TO-251 Lead Free and Green Devices Available (RoHS Compliant)D (2)ApplicationsG (1) Power Management for SMPS. DC-DC Converter.S (3)N-Channel MOSFETOrde

 0.621. Size:509K  sino
sm1a15nsf.pdf

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SM1A15NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/32A,RDS(ON)=44m (max.) @ VGS=10V Reliable and RuggedSD Lead Free and Green Devices AvailableG(RoHS Compliant)Top View of TO-220DApplicationsG Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM1A15NSF : TO-220Assembly Mate

 0.622. Size:250K  sino
sm1a22nsfp.pdf

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SM1A22NSFP N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/4.2A,RDS(ON)= 340m (Max.) @ VGS=10VRDS(ON)= 385m (Max.) @ VGS=4.5VS 100% UIS + Rg TestedDG Reliable and RuggedTop View of TO-220FP Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in DC/DC Converter.SN-Channel MOSFETOrdering and Marking Inform

 0.623. Size:261K  sino
sm1f04nsg.pdf

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SM1F04NSGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 150V/86A, RDS(ON)= 13.5m (max.) @ VGS= 10VS Reliable and Rugged G Lead Free and Green Devices Available Top View of TO-263-3(RoHS Compliant)DApplicationsG Synchronous Rectification. Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM1F0

 0.624. Size:230K  sino
sm1f15nsv.pdf

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SM1F15NSV N-Channel Enhancement Mode MOSFETFeatures Pin Description 150V/2.6A,RDS(ON)= 210m (max.) @ VGS=10VGRDS(ON)= 235m (max.) @ VGS=4.5VDS 100% UIS + Rg Tested Reliable and RuggedTop View SOT-223 Lead Free and Green Devices Available(RoHS Compliant)DApplicationsG Transformer Driving Switch DC-DC Converters Primary Switch Load SwitchSN-Channel MO

 0.625. Size:256K  sino
sm1110nsa.pdf

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SM1110NSA N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/1.7A ,DRDS(ON)=200m (max.) @ VGS=10VS RDS(ON)=235m (max.) @ VGS=4.5VG ESD Protected Reliable and RuggedTop View of SOT-23-3 Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in TV Inveter.SN-Channel MOSFETOrdering and Marking InformationSM1110NS

 0.626. Size:251K  sino
sm1a02nsf.pdf

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SM1A02NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/130A, RDS(ON)= 7.2m (max.) @ VGS= 10V Reliable and RuggedSD Lead Free and Green Devices Available G(RoHS Compliant)Top View of TO-220DApplicationsG Synchronous Rectification Power Management in Inverter Systems Motor DriverSN-Channel MOSFETOrdering and Marking InformationPackage C

 0.627. Size:277K  sino
sm1620cscs.pdf

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SM1620CSCS Dual Enhancement Mode MOSFET (N- and P-Channel)Features Pin Description N-Channel 20V/0.91A,S2 RDS(ON)= 240m (max.) @ VGS=4.5VG2D2 RDS(ON)= 320m (max.) @ VGS=2.5VD1G1S1 P-Channel-12V/-0.86A,Top View of SOT-363RDS(ON)= 290m (max.) @ VGS=-4.5VRDS(ON)= 400m (max.) @ VGS=-2.5V(3)D2(6)D1RDS(ON)= 530m (max.) @ VGS=-1.8V Reliable and Rugged Lead

 0.628. Size:260K  sino
sm1a24nsk.pdf

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SM1A24NSKN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 100V/4A,DD RDS(ON)= 120m (max.) @ VGS= 10V RDS(ON)= 135m (max.) @ VGS= 4.5VS Reliable and RuggedSSG Lead Free and Green Devices AvailableTop View of SOP-8 (RoHS Compliant)( 5,6,7,8 )D D D D(4)ApplicationsG Power Management in DC/DC Converter.S S S(1, 2, 3)N-Channel MOSFET

 0.629. Size:215K  sino
sm1a42csk.pdf

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SM1A42CSKDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N ChannelD1D1D2100V/2.5A,D2RDS(ON) = 150m (max.) @ VGS = 10VRDS(ON) = 170m (max.) @ VGS = 4.5VS1G1 P Channel S2G2-100V/-2.2A,Top View of SOP-8RDS(ON) = 205m (max.) @ VGS =-10V(8) (7) (6) (5)RDS(ON) = 240m (max.) @ VGS =-4.5VD1 D1 D2 D2 100% UIS + Rg Tested

 0.630. Size:259K  sino
sm1a06nsu.pdf

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SM1A06NSU N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDrain 4 100V/60A,RDS(ON)=17m (Max.) @ VGS=10V3 Source2 Reliable and Rugged1 Gate Lead Free and Green Devices Available(RoHS Compliant)Top View of TO-252DApplicationsG Power Management in TV Converter. DC-DC Converter.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM1A

 0.631. Size:150K  sino
sm1c01nsfp.pdf

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SM1C01NSFPN-Channel Enhancement Mode MOSFETFeatures Pin Description 120V/80A, RDS(ON)= 8.4m(max.) @ VGS= 10V Reliable and RuggedS Lead Free and Green Devices AvailableDG (RoHS Compliant)Top View of TO-220FP 100% UIS + Rg TestedD (2)Applications Synchronous Rectification.G (1) Power Management in Inverter Systems. Motor Driver.S (3)N-Channe

 0.632. Size:155K  sino
sm1108nsf.pdf

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SM1108NSF/SM1108NSFP N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/120A,RDS(ON)=7.4m (max.) @ VGS=10V Reliable and Rugged S SD DG G Lead Free and Green Devices AvailableTop View of TO-220 Top View of TO-220-FP(RoHS Compliant)DApplicationsG Synchronous Rectification. Power Management in Inverter Systems.SN-Channel MOSFETOrdering and

 0.633. Size:551K  sino
apm1105nu.pdf

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APM1105NUN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 100V/16A,RDS(ON)= 100m (max.) @ VGS=10VSRDS(ON)= 170m (max.) @ VGS=4.5VG ESD ProtectedTop View of TO-252-3 Reliable and RuggedD Lead Free and Green Devices Available(RoHS Compliant)GApplications Power Management in TV Inverter.SN-Channel MOSFETOrdering and Marking Information

 0.634. Size:247K  sino
sm1c01nsf.pdf

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SM1C01NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 120V/120A, RDS(ON)= 8.4m (max.) @ VGS= 10V Reliable and RuggedSD Lead Free and Green Devices Available G(RoHS Compliant)Top View of TO-220DApplicationsG Synchronous Rectification Power Management in Inverter Systems Motor DriverSN-Channel MOSFETOrdering and Marking InformationPackage C

 0.635. Size:224K  sino
sm1301nssa.pdf

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SM1301NSSA N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/0.8A,D RDS(ON)= 0.8 (max.) @ VGS=10V RDS(ON)= 1.1 (max.) @ VGS=4.5VS RDS(ON)= 2.1 (max.) @ VGS=2.5VG Reliable and RuggedTop View of SOT-523 Lead Free and Green Devices Available(RoHS Compliant)D ESD ProtectionGApplications High Speed and Analog Switching ApplicationsS Low voltage d

 0.636. Size:234K  sino
sm1f13nsk.pdf

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SM1F13NSK N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDD 150V/4.5A,D RDS(ON)= 69m (max.) @ VGS=10V RDS(ON)= 78m (max.) @ VGS=4.5VSSS 100% UIS + Rg TestedG Reliable and RuggedTop View of SOP-8 Lead Free and Green Devices Available( 5,6,7,8 )(RoHS Compliant)D D D DApplications(4)G DC-DC converter switching for Networkong General

 0.637. Size:261K  sino
sm1a11nsk.pdf

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SM1A11NSK N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDD 100V/6A, D RDS(ON)= 45m (Max.) @ VGS=10VS Reliable and RuggedSS Lead Free and Green Devices AvailableGTop View of SOP-8(RoHS Compliant)( 5,6,7,8 )D D D DApplications(4)G Power Management for Boost Converters. Synchronous Rectifiers for SMPS. LED Backlighting.S S S(1, 2, 3

 0.638. Size:265K  sino
sm1a23nsk.pdf

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SM1A23NSKN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 100V/4.2A,DD RDS(ON)= 100m (max.) @ VGS= 10V RDS(ON)= 110m (max.) @ VGS= 4.5VS Reliable and RuggedSSG Lead Free and Green Devices AvailableTop View of SOP-8 (RoHS Compliant)( 5,6,7,8 )D D D D(4)ApplicationsG Power Management in DC/DC Converter.S S S(1, 2, 3)N-Channel MOSF

 0.639. Size:159K  sino
sm1a07nsf.pdf

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SM1A07NSF N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/118A, RDS(ON)= 6.4m (Max.) @ VGS=10V Reliable and RuggedSD Lead Free and Green Devices AvailableG(RoHS Compliant)Top View of TO-220DApplicationsG Synchronous Rectification. Power Management in Inverter Systems. Motor Driver.SN-Channel MOSFETOrdering and Marking

 0.640. Size:262K  sino
sm1105nsk.pdf

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SM1105NSK N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDDD 100V/3.5A, RDS(ON)= 105m (max.) @ VGS= 10V RDS(ON)= 175m (max.) @ VGS= 4.5V SSS ESD protecedG Reliable and RuggedTop View of SOP-8 Lead Free and Green Devices Available( 5,6,7,8 ) (RoHS Compliant)D D D DApplications Power Management in TV Inverter. (4)GS S S(1, 2, 3)N-Chan

 0.641. Size:248K  sino
sm1a23nsd.pdf

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SM1A23NSDN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/4.2A, RDS(ON)= 100m (max.) @ VGS= 10V SD RDS(ON)= 110m (max.) @ VGS= 4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View SOT-89 (RoHS Compliant)D (2)ApplicationsG (1) Power Management in DC/DC Converter. Load Switching.S (3)N-Channel MOSFETOrdering and Marking Inform

 0.642. Size:263K  sino
sm1a63nhuc.pdf

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SM1A63NHUCN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/73A, RDS(ON)= 9.6m (max.) @ VGS= 10V RDS(ON)= 12.4m (max.) @ VGS= 4.5V 100% UIS + Rg Tested Reliable and Rugged Lead Free and Green Devices Available Top View of TO-251S (RoHS Compliant)D (2)ApplicationsG (1) Power Management for SMPS. DC-DC Converter.S (3)N-Channel MOSFETOrdering and

 0.643. Size:149K  sino
sm1f08nsfp.pdf

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SM1F08NSFP N-Channel Enhancement Mode MOSFETFeatures Pin Description 150V/12A, RDS(ON)= 110m(max.) @ VGS= 10V Reliable and RuggedSD Lead Free and Green Devices AvailableG (RoHS Compliant)Top View of TO-220FP 100% UIS + Rg TestedDApplicationsG DC-DC Converter Switching for Networkong. General Purpose Switching.SN-Channel MOSFETOrdering and Marking I

 0.644. Size:170K  sino
sm1a33psu.pdf

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SM1A33PSUP-Channel Enhancement Mode MOSFETFeatures Pin Description -100V/-38A,Drain 4 RDS(ON)= 39m(max.) @ VGS=-10V3 Source RDS(ON)= 49m(max.) @ VGS=-4.5V2 100% UIS+Rg Tested1 Gate Reliable and RuggedTop View of TO-252-2 Lead Free and Green Devices Available(RoHS Compliant)DApplicationsG Power Management for Industrial DC / DC Converters.SP

 0.645. Size:272K  sino
sm1a11nsv.pdf

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SM1A11NSV N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/6A, RDS(ON)= 45m (Max.) @ VGS=10VG Reliable and RuggedDS Lead Free and Green Devices Available(RoHS Compliant)Top View SOT-223DApplicationsG Power Management for Boost Converters. Synchronous Rectifiers for SMPS.S LED Backlighting.N-Channel MOSFETOrdering and Marking Information

 0.646. Size:150K  sino
sm1a23nsfp.pdf

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SM1A23NSFPN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/13A, RDS(ON)= 100m(max.) @ VGS= 10V RDS(ON)= 110m(max.) @ VGS= 4.5VS Reliable and RuggedDG Lead Free and Green Devices Available (RoHS Compliant)Top View of TO-220FP ESD ProtectionD 100% UIS + Rg TestedGApplications Power Management in DC/DC Converter.SN-Channel MOSFETOrd

 0.647. Size:263K  sino
sm1a25nsk.pdf

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SM1A25NSKN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 100V/3.3A,DD RDS(ON)= 162m (max.) @ VGS= 10V RDS(ON)= 180m (max.) @ VGS= 4.5VS ESD ProtectionSSG Reliable and RuggedTop View of SOP-8 Lead Free and Green Devices Available( 5,6,7,8 ) (RoHS Compliant)D D D D(4)ApplicationsG Power Management in TV Inverter.S S S(1, 2, 3)N

 0.648. Size:170K  sino
sm1a15nsu.pdf

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SM1A15NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/30A, RDS(ON)= 44m(max.) @ VGS= 10V RDS(ON)= 57m(max.) @ VGS= 4.5V Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-3 (RoHS Compliant)DGApplications Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM1A1

 0.649. Size:265K  sino
sm1a24nsu.pdf

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SM1A24NSUN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/12A,D RDS(ON)= 120m (max.) @ VGS= 10VS RDS(ON)= 135m (max.) @ VGS= 4.5V Reliable and RuggedG Lead Free and Green Devices Available (RoHS Compliant) Top View of TO-252D (2)ApplicationsG (1) Power Management in DC/DC Converter.S (3)N-Channel MOSFETOrdering and Marking InformationPacka

 0.650. Size:169K  sino
sm1f12nsu.pdf

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SM1F12NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 150V/35A, D RDS(ON)= 38m(max.) @ VGS= 10VS 100% UIS + Rg TestedG Reliable and RuggedTop View of TO-252-2 Lead Free and Green Devices Available (RoHS Compliant)DApplicationsG Power Management in TV Converter. DC-DC Converter.SN-Channel MOSFETOrdering and Marking InformationPackage C

 0.651. Size:259K  sino
sm1a63nhkp.pdf

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SM1A63NHKPN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/62A,DDDD RDS(ON)= 9m (max.) @ VGS= 10V RDS(ON)= 11.7m (max.) @ VGS= 4.5V 100% UIS + Rg Tested GPin 1SSS Reliable and RuggedDFN5x6A-8_EP Lead Free and Green Devices Available(5,6,7,8) (RoHS Compliant)D D DDApplications(4) G Power Management for SMPS. DC-DC Converter.S S

 0.652. Size:163K  sino
sm1f14nsu.pdf

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SM1F14NSUN-Channel Enhancement Mode MOSFETFeatures Pin Description 150V/20A,Drain 4 RDS(ON)= 70m(max.) @ VGS= 10V3 Source Reliable and Rugged2 Lead Free and Green Devices Available1 Gate (RoHS Compliant)Top View of TO-252-3DApplicationsG Power Management in TV Converter. DC-DC Converter.SN-Channel MOSFETOrdering and Marking InformationPackage Cod

 0.653. Size:180K  sino
sm1a20nsv.pdf

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SM1A20NSVN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/8A, RDS(ON)= 29m(max.) @ VGS= 10VG RDS(ON)= 33m(max.) @ VGS= 4.5VDS Reliable and Rugged Lead Free and Green Devices AvailableTop View SOT-223 (RoHS Compliant)DApplicationsG Power Management in DC/DC Converter.SN-Channel MOSFETOrdering and Marking InformationPackage Code

 0.654. Size:233K  sino
sm1a21nsk.pdf

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SM1A21NSKN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 100V/7A, DD RDS(ON)= 18m (max.) @ VGS= 10V RDS(ON)= 21.5m (max.) @ VGS= 4.5VSS 100% UIS + Rg TestedSG Reliable and RuggedTop View of SOP-8 Lead Free and Green Devices Available(5,6,7,8) (RoHS Compliant)DDDDApplications(4) G DC-DC Converter. Motor Control.S S S( 1, 2, 3 )N

 0.655. Size:237K  sino
sm1660dscs.pdf

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SM1660DSCS Dual N-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/0.26A, RDS(ON)= 2.2 (max.) @ VGS=10V S2G2D2 RDS(ON)= 2.6 (max.) @ VGS=4.5VD1G1 Reliable and RuggedS1 Lead Free and Green Devices AvailableTop View of SOT-363(RoHS Compliant)(6)D1(3)D2 ESD Protection : HBM=(+/-)1600V MM=(+/-)100V(2)(5)ApplicationsG1G2 Load switch. Hig

 0.656. Size:125K  china
csm150.pdf

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CSM150 N PD TC=25 150 W 1.2 W/ ID VGS=10V,TC=25 34 A ID VGS=10V,TC=100 21 A IDM 136 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.83 /W RthJA 48 /W BVDSS VGS=0V,ID=1.0mA 100 V VGS=10V,ID=21A 0

 0.657. Size:124K  jdsemi
cm10n60afz.pdf

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RC1N0FM06AZ www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1LDE21 2

 0.658. Size:125K  jdsemi
cm10n65f.pdf

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RCM10N65F www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS 1 LDE2 12

 0.659. Size:123K  jdsemi
cm12n60a to220a.pdf

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RCM12N60A www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 LDE2 3

 0.660. Size:123K  jdsemi
cm15n50.pdf

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RC1N0M55 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 500V N-Channel VDMOS RoHS 12 3

 0.661. Size:125K  jdsemi
cm12n65af.pdf

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RCM12N65AF www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS 1 LDE2 12

 0.662. Size:126K  jdsemi
cm12n60af.pdf

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RCM12N60AF www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 LDE2 1

 0.663. Size:123K  jdsemi
cm12n65a to220a.pdf

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RCM12N65A www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS 1 LDE2 3

 0.664. Size:124K  jdsemi
cm18n50p.pdf

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RC1N0M85P www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 500V N-Channel VDMOS RoHS 121 2 33

 0.665. Size:127K  jdsemi
cm10n60f.pdf

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RCM10N60F www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 LDE2 1

 0.666. Size:147K  jdsemi
cm13n50f to220fh.pdf

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RCM13N50F www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 500V N-Channel VDMOS RoHS

 0.667. Size:144K  jdsemi
cm12n65 to220a.pdf

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RCM12N65 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS

 0.668. Size:125K  jdsemi
cm110n055.pdf

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RCM110N055 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 55V N-Channel Trench-MOS RoHS 1 USP 2 3

 0.669. Size:127K  jdsemi
cm100n03.pdf

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RCM100N03 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 30V N-Channel Trench-MOS RoHS 1 USP 2 3

 0.670. Size:127K  jdsemi
cm12n65f.pdf

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RCM12N65F www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS 1 LDE2 1 2

 0.671. Size:122K  jdsemi
cm10n65az.pdf

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RCM10N65AZ www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS 1 LDE2

 0.672. Size:125K  jdsemi
cm10n65afz.pdf

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RCM10N65AFZ www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS 1 LDE2 1

 0.673. Size:120K  jdsemi
cm1n70.pdf

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RC17MN0 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 700V N-Channel VDMOS RoHS 12 3TO-92 4

 0.674. Size:141K  jdsemi
cm1n60s.pdf

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RCM1N60S www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS

 0.675. Size:124K  jdsemi
cm10n80p.pdf

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RC1N0M08P www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 800V N-Channel VDMOS RoHS 121 233

 0.676. Size:124K  jdsemi
cm10n60az.pdf

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RCM10N60AZ www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 LDE2

 0.677. Size:123K  jdsemi
cm140n04.pdf

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RCM140N04 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 40V N-Channel Trench-MOS RoHS 1 USP 2 3

 0.678. Size:120K  jdsemi
cm1n60.pdf

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RC16MN0 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 12 3TO-92 4

 0.679. Size:130K  jdsemi
cm13n50.pdf

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RC1N0M35 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 500V N-Channel VDMOS RoHS 12 3

 0.680. Size:123K  jdsemi
cm1n60c.pdf

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RC16CMN0 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 12 3TO-251 4

 0.681. Size:119K  jdsemi
cm10n40.pdf

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RC1N0M04 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 400V N-Channel VDMOS RoHS 12 3TO-2

 0.682. Size:122K  jdsemi
cm18n20.pdf

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RC1N0M82 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 200V N-Channel VDMOS RoHS 12 3TO-220A 4

 0.683. Size:124K  jdsemi
cm10n60.pdf

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RCM10N60 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 LDE2 3

 0.684. Size:126K  jdsemi
cm120n06.pdf

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RCM120N06 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 60V N-Channel Trench-MOS RoHS 1 USP 2 3

 0.685. Size:146K  jdsemi
cm18n50f.pdf

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RCM18N50F www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 500V N-Channel VDMOS RoHS

 0.686. Size:445K  tysemi
kp8m10.pdf

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SMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Typ

 0.687. Size:312K  kexin
njm13003-1.63.pdf

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DIP Type TransistorsNPN TransistorsNJM13003-1.63TO-126Unit:mm8.00 0.30 3.25 0.20 Features High voltage capability3.20 0.10 High speed switching Wide SOA(1.00) (0.50)0.75 0.10 ROHS compliant1.75 0.201.60 0.100.75 0.10#1+0.102.28TYP 2.28TYP 0.50 0.05[2.280.20] [2.280.20]1. Base2. Collector3. Emitter Absol

 0.688. Size:303K  silan
sgt70n65fdm1p7.pdf

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SGT70N65FDM1P7 70A650V C2SGT70N65FDM1P7 Field Stop1 UPS,SMPSG PFC 3E 70A650VVCE(sat)( )=2.3V@IC=70A

 0.689. Size:438K  silan
sgt75t65sdm1p7.pdf

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SGT75T65SDM1P7 75A650V C2SGT75T65SDM1P7 1Field Stop IIIG UPSSMPS PFC 3E 75A650VVCE(sat)( )=1.65V@IC=75A

 0.690. Size:363K  silan
sgt30t60sdm1p7.pdf

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SGT30T60SDM1P7 30A600V C2SGT30T60SDM1P7 Field Stop III 1G UPSSMPS PFC 3E 30A600VVCE sat=1.65V@IC=30

 0.691. Size:315K  silan
sgt10t60sdm1p7.pdf

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SGT10T60SDM1P7 10A600V C2SGT10T60SDM1P7 1Field StopIIIG UPSSMPS 3E 10A600VVCE(sat)()=1.65V@I

 0.692. Size:669K  silan
sgm100hf12a1tfdt4.pdf

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SGM100HF12A1TFDT4 100A1200V IGBT SGM100HF12A1TFDT4 100A1200VVCE(sat)( ) =2.1V@IC=100A VCE(sat) A1 DBC

 0.693. Size:388K  silan
sgm100hf12a3tfd.pdf

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SGM100HF12A3TFD 100A1200V IGBT 0B SGM100HF12A3TFD 1B 100A1200VVCE(sat)( ) =2.1V@IC=100A VCE(sat) A3 DBC

 0.694. Size:407K  silan
sgt75t65sdm1p4.pdf

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SGT75T65SDM1P4 75A650V C1SGT75T65SDM1P4 4Field Stop IIIG UPSSMPS PFC 3 2E 75A650VVCE(sat)( )=1.65V@IC=75A

 0.695. Size:519K  silan
sgt20t60sdm1p7.pdf

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SGT20T60SDM1P7 20600V C2SGT20T60SDM1P7 Field Stop1G UPSSMPS PFC 3E 20A600VVCE(sat)( )=1.7V@IC=20A

 0.696. Size:314K  silan
sgt50t65sdm1p7.pdf

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SGT50T65SDM1P7 50A650V C2SGT50T65SDM1P7 1Field Stop IIIG UPSSMPS PFC 3E 50A650VVCE(sat)( )=1.65V@IC=50A

 0.697. Size:403K  silan
sgm100hf12a1tfd.pdf

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SGM100HF12A1TFD 100A, 1200V IGBT 0B SGM100HF12A1TFD 1B 100A1200VVCE(sat)( ) =2.1V@IC=100A VCE(sat) A1 DBC

 0.698. Size:316K  silan
sgt10t60sdm1d.pdf

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SGT10T60SDM1D 10A600V C2SGT10T60SDM1D Field StopIII 1G UPSSMPS 3E 10A600VVCE(sat)()=1.65V@IC=1

 0.699. Size:353K  silan
sgm150hf12a3tfd.pdf

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SGM150HF12A3TFD 150A, 1200V IGBT SGM150HF12A3TFD 20KHz 150A1200VVCE(sat)( ) =2.2V@IC=150A VCE(sat)

 0.700. Size:392K  belling
blm138k.pdf

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Pb Free ProductBLM138KN-Channel Enhancement Mode Power MOSFET GENERAL FEATURES VDS = 50V,ID = 0.22A RDS(ON)

 0.701. Size:111K  chenmko
chm1503yjgp.pdf

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CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNT CHM1503YJGPDual Enhancement Mode Field Effect TransistorN-channel Q1: VOLTAGE 30 Volts CURRENT 8 AmpereN-channel Q2: VOLTAGE 30 Volts CURRENT 9 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely

 0.702. Size:107K  chenmko
chm1012lpagp.pdf

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CHENMKO ENTERPRISE CO.,LTDCHM1012LPAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 120 Volts CURRENT 10 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High powe

 0.703. Size:47K  chenmko
chm13n07pagp.pdf

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CHENMKO ENTERPRISE CO.,LTDCHM13N07PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 70 Volts CURRENT 11 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power

 0.704. Size:148K  chenmko
chm1423wgp.pdf

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CHENMKO ENTERPRISE CO.,LTDCHM1423WGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 2.8 AmpereAPPLICATION* Power Management in Note book * Portable Equipment* Battery Powered System* DC/DC Converter SC-70/SOT-323* Load Switch* DSC* LCD Display inverter FEATURE 0.651.30.12.00.20.65* Small surface mounting type. (SC-7

 0.705. Size:85K  chenmko
chm1710pagp.pdf

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CHENMKO ENTERPRISE CO.,LTDCHM1710PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 100 Volts CURRENT 17 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power

 0.706. Size:110K  chenmko
chm11c2jgp.pdf

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CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNT CHM11C2JGPDual Enhancement Mode Field Effect TransistorN-channel: VOLTAGE 30 Volts CURRENT 7 AmpereP-channel: VOLTAGE 20 Volts CURRENT 4.3 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low R

 0.707. Size:67K  chenmko
chm10n4ngp.pdf

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CHENMKO ENTERPRISE CO.,LTDCHM10N4NGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 450 Volts CURRENT 10 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small flat package. (D2PAK)0.420(10.67)0.190(4.83)* High density cell design for extremely low RDS(ON). 0.380(9.69)0.160(4

 0.708. Size:383K  chenmko
chm1592xgp.pdf

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CHENMKO ENTERPRISE CO.,LTDCHM1592XGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 500 mAmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-62/SOT-89FEATURE* Small surface mounting type. (SC-62/SOT-89)* High density cell design for extremely low RDS(ON). 4.6MAX. 1.6MAX.* Rugg

 0.709. Size:91K  chenmko
chm1203evjgp.pdf

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CHENMKO ENTERPRISE CO.,LTDCHM1203EVJGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 12 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. ( SO-8 )* Super high density cell design for extremely low RDS(ON). ( )4.06 0.160( )3.70 0.146* High p

 0.710. Size:176K  chenmko
chm1413wgp.pdf

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CHENMKO ENTERPRISE CO.,LTDCHM1413WGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 2.9 AmpereAPPLICATION* Power Management in Note book * Portable Equipment* Battery Powered System* DC/DC ConverterSC-70/SOT-323* Load Switch* DSC* LCD Display inverter FEATURE0.651.30.12.00.2* Small surface mounting type. (SC-70/S

 0.711. Size:59K  chenmko
chm1012pagp.pdf

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CHENMKO ENTERPRISE CO.,LTDCHM1012PA SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 120 Volts CURRENT 10 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power

 0.712. Size:91K  chenmko
chm1024vgp.pdf

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CHENMKO ENTERPRISE CO.,LTDCHM1024VGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 700 mAmpereAPPLICATION* Power Management in Note book * Battery Powered System * DC/DC Converter * LCD Display inverter SOT-563FEATURE* Small surface mounting type. (SOT-563)* Low-Voltage Operation (1)(5)* High-Speed Circuits 0.500.9~1

 0.713. Size:508K  chenmko
chm1592gp.pdf

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CHENMKO ENTERPRISE CO.,LTDCHM1592GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 500 mAmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59)* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High sat

 0.714. Size:315K  chenmko
chm1012tgp.pdf

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CHENMKO ENTERPRISE CO.,LTDCHM1012TGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 0.65 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-75/SOT-416FEATURE* Small surface mounting type. (SC-75/SOT-416)* High density cell design for low RDS(ON). * Suitable for high packing den

 0.715. Size:47K  chenmko
chm12n10pagp.pdf

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CHENMKO ENTERPRISE CO.,LTDCHM12N10PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 100 Volts CURRENT 11 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High powe

 0.716. Size:154K  chenmko
chm1702xgp.pdf

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CHENMKO ENTERPRISE CO.,LTDCHM1702XGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 500 mAmpereFEATURE* Small surface mounting type. (SC-62/SOT-89)* High density cell design for extremely low RDS(ON). SC-62/SOT-89* Rugged and reliable.* High saturation current capability.CONSTRUCTION4.6MAX. 1.6MAX.* N-Channel Enhancement1.7MA

 0.717. Size:178K  chenmko
chm1433wgp.pdf

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CHENMKO ENTERPRISE CO.,LTDCHM1433WGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 2.8 AmpereAPPLICATION* Power Management in Note book * Portable Equipment* Battery Powered System* DC/DC ConverterSC-70/SOT-323* Load Switch* DSC* LCD Display inverter FEATURE0.651.30.12.00.2* Small surface mounting type. (SC-70/S

 0.718. Size:125K  chenmko
chm1304wgp.pdf

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CHENMKO ENTERPRISE CO.,LTDCHM1304WGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 2.0 AmpereAPPLICATION* Power Management in Note book * Portable Equipment* Battery Powered System* DC/DC Converter SC-70/SOT-323* Load Switch* DSC* LCD Display inverter FEATURE 0.651.30.12.00.20.65* Small surface mounting type. (SC-7

 0.719. Size:426K  chenmko
chm1273xgp.pdf

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CHENMKO ENTERPRISE CO.,LTDCHM1273XGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 2 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-62/SOT-89FEATURE* Small surface mounting type. (SC-62/SOT-89)* High density cell design for extremely low RDS(ON). 4.6MAX. 1.6MAX.* Rugged

 0.720. Size:243K  chenmko
chm1305wgp.pdf

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CHENMKO ENTERPRISE CO.,LTDCHM1305WGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 1 AmpereAPPLICATION* Power Management in Note book * Portable Equipment* Battery Powered System* DC/DC ConverterSC-70/SOT-323* Load Switch* DSC* LCD Display inverter FEATURE0.651.30.12.00.2* Small surface mounting type. (SC-70/SOT

 0.721. Size:67K  chenmko
chm1023vgp.pdf

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CHENMKO ENTERPRISE CO.,LTDCHM1023VGPSURFACE MOUNT Dual P-Channel Enhancement Mode Field Effect TransistorVOLTAGE 20 Volts CURRENT 0.5 AmpereFEATURE* Small surface mounting type. (SOT-563)* High density cell design for low RDS(ON).* Suitable for high packing density.SOT-563(1)(5)CONSTRUCTION0.50* P-Channel Enhancement0.9~1.1 1.5~1.70.50(4)(3)0.15~0.31.1~1.

 0.722. Size:177K  chenmko
chm1443wgp.pdf

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CHENMKO ENTERPRISE CO.,LTDCHM1443WGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 2.8 AmpereAPPLICATION* Power Management in Note book * Portable Equipment* Battery Powered System* DC/DC Converter SC-70/SOT-323* Load Switch* DSC* LCD Display inverter FEATURE 0.651.30.12.00.20.65* Small surface mounting type. (SC-7

 0.723. Size:250K  chenmko
chm1825ngp.pdf

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CHENMKO ENTERPRISE CO.,LTDCHM1825NGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 250 Volts CURRENT 18 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small package. (D2PAK)0.420(10.67)0.190(4.83)* Super high dense cell design for extremely low RDS(ON). 0.380(9.69)0.160(4.

 0.724. Size:318K  chenmko
chm1273gp.pdf

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CHENMKO ENTERPRISE CO.,LTDCHM1273GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 2 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small surface mounting type. (SC-59)* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* Hi

 0.725. Size:69K  chenmko
chm12p10ngp.pdf

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CHENMKO ENTERPRISE CO.,LTDCHM12P10N SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 100 Volts CURRENT 11 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small flat package. (D2PAK )0.420(10.67)0.190(4.83)* High density cell design for extremely low RDS(ON). 0.380(9.69)0.160

 0.726. Size:443K  chenmko
chm1013tgp.pdf

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CHENMKO ENTERPRISE CO.,LTDCHM1013TGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 0.45 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-75/SOT-416FEATURE* Small surface mounting type. (SC-75/SOT-416)* High density cell design for low RDS(ON). * Suitable for high packing den

 0.727. Size:171K  crownpo
ctm18n20.pdf

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CTM18N20Crownpo TechnologyPower MOSFETGeneral DescriptionFeatures.This Power MOSFET is designed for low voltage, highSilicon Gate for Fast Switching Speeds.speed power switching applications such as switchingLow R to Minimize On-Losses. Specified at ElevatedDS(on)regulators, converters, solenoid and relay drivers.Temperature.Rugged SOA is Power Dissipation Limi

 0.728. Size:229K  crownpo
ctm14n50.pdf

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CTM14N50Crownpo TechnologyPower MOSFETGeneral DescriptionFeatures.This high voltage MOSFET uses an advanced terminationRobust High Voltage Termination. scheme to provide enhanced voltage-blocking capabilityAvalanche Energy Specified.without degrading performance over time. In addition, thisSource-to-Drain Diode Recovery Time Comparableadvanced MOSFET is designed to wit

 0.729. Size:543K  dawin
dm1gl75sh12a.pdf

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Discontinuance (Aug. 31, 2013) DM1GL75SH12A July. 2010 High Power SPT+ & Rugged Type IGBT Module Description Equivalent Circuit and Package DAWINS IGBT 7DM-1 Package devices are optimized to reduce losses and Equivalent Circuit switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives

 0.730. Size:587K  dawin
dl2m100n5.pdf

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D WTMD WTMDAWIN ElectronicsDAWIN Electronics DL2M100N5Apr. 2008500V DUAL N-Channel MOSFETDescriptionEquivalent Circuit and Package DAWINS Dual power MOSFET devices are designed for switching applications of high voltage and current. (You have to connect external Equivalent Circuit fast recovery diode reverse connected across each MOSFET)The mounting base of the module

 0.731. Size:383K  dynex
dim1600fsm12-a.pdf

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DIM1600FSM12-A000 Single Switch IGBT Module Replaces DS5533-3.1 DS5533-4 October 2010 (LN27611) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 1600A Non Punch Through Silicon IC(PK) (max) 3200A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the

 0.732. Size:492K  dynex
dim1000nsm33-ts.pdf

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DIM1000NSM33-TS000 Single Switch IGBT Module Replaces DS6093-1 DS6093-2 October 2013 (LN31017) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 1000A High Current Density Enhanced DMOS SPT IC(PK) (max) 2000A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary

 0.733. Size:532K  dynex
dim1000ecm33-tl.pdf

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DIM1000ECM33-TL000 IGBT Chopper Module Replaces DS6105-1 DS6105-2 March 2014 (LN31424) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10s Short Circuit Withstand IC (max) 1000A High Thermal Cycling Capability IC(PK) (max) 2000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlS

 0.734. Size:421K  dynex
dim800fsm12-a.pdf

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DIM800FSM12-A000 Single Switch IGBT Module Replaces DS5531-3.1 DS5531-4 November 2010 (LN27682) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 800A Non Punch Through Silicon IC(PK) (max) 1600A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the

 0.735. Size:436K  dynex
dim1800ess12-a.pdf

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DIM1800ESS12-A000 Single Switch IGBT Module Replaces DS5857-1.1 DS5857-2 October 2010 (LN27614) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V Non Punch Through Silicon IC (max) 1800A Isolated Cu Base with Al2O3 Substrates IC(PK) (max) 3600A Lead Free construction * Measured at the power busbars, not the auxiliary

 0.736. Size:492K  dynex
dim1000nsm33-tl.pdf

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DIM1000NSM33-TL000 Single Switch IGBT Module DS6109-1 June 2013 (LN30637) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10s Short Circuit Withstand IC (max) 1000A High Thermal Cycling Capability IC(PK) (max) 2000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base with

 0.737. Size:454K  dynex
dim1200asm45-ts.pdf

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Data DIM1200ASM45-TS000 Single Switch IGBT Module Replaces DS6102-1 DS6102-2 October 2013 (LN31073) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 4500V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 1200A High Current Density Enhanced DMOS SPT IC(PK) (max) 2400A Isolated AlSiC Base With AlN Substrates * Measured at the aux

 0.738. Size:421K  dynex
dim1200fsm17-a.pdf

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DIM1200FSM17-A000 Single Switch IGBT Module Replaces DS5456-3.5 DS5456-4 November 2010 (LN27718) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1700V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 1200A Non Punch Through Silicon IC(PK) (max) 2400A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not th

 0.739. Size:532K  dynex
dim1000ecm33-ts.pdf

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DIM1000ECM33-TS000 IGBT Chopper Module Replaces DS6091-1 DS6091-2 March 2014 (LN31425) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 1000A High Current Density Enhanced DMOS SPT IC(PK) (max) 2000A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminal

 0.740. Size:438K  dynex
dim1200esm33-f.pdf

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DIM1200ESM33-F000 Single Switch IGBT Module Replaces DS5831-2 DS5831-3 May 2011 (LN28347) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.8V High Thermal Cycling Capability IC (max) 1200A Soft Punch Through Silicon IC(PK) (max) 2400A Isolated AlSiC Base With AlN Substrates * Measured at the auxiliary terminals L

 0.741. Size:429K  dynex
dim600dcm17-a.pdf

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DIM600DCM17-A000 IGBT Chopper Module Replaces DS5491-4.2 DS5491-5 March 2011 (LN26753) FEATURES KEY PARAMETERS 0.5286 x O70.216 10s Short Circuit Withstand VCES 1700V VCE(sat) * (typ) 2.7V 0.2 High Thermal Cycling Capability screwing depth40IC (max) 600A max 8 Non Punch Through Silicon 0.253IC(PK) (max) 1200A Isolated AlSiC Base Wi

 0.742. Size:458K  dynex
dim1200asm45-ts001.pdf

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Data DIM1200ASM45-TS001 Single Switch IGBT Module Replaces DS6107-1 DS6107-2 October 2013 (LN31065) FEATURES KEY PARAMETERS 10.2kV Isolation VCES 4500V VCE(sat) * (typ) 2.7V 10s Short Circuit Withstand IC (max) 1200A High Thermal Cycling Capability IC(PK) (max) 2400A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals

 0.743. Size:445K  dynex
dim1600ecm17-a.pdf

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Preliminary Information DIM1600ECM17-A000 IGBT Chopper Module DS6069-1 September 2011 (LN28672) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1700V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 1600A Soft Punch Through Silicon IC(PK) (max) 3200A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminal

 0.744. Size:551K  dynex
dim400phm17-a.pdf

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DIM400PHM17-A000 IGBT Half Bridge Module Replaces DS5561-1.3 DS5561.2 January 2014 (LN31262) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VDRM 1700V VT* (typ) 4.9V High Thermal Cycling Capability IC (max) 400A Non Punch Through Silicon IC(PK) (max) 800A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the auxiliary

 0.745. Size:418K  dynex
dim1200fss12-a.pdf

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DIM1200FSS12-A000 Single Switch IGBT Module Replaces DS5834-1.2 DS5834-2 October 2010 (LN27661) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V Non Punch Through Silicon IC (max) 1200A Isolated Cu Base with Al2O3 Substrates IC(PK) (max) 2400A Lead Free construction * Measured at the power busbars, not the auxiliary

 0.746. Size:400K  dynex
dim1800esm12-a.pdf

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DIM1800ESM12-A000 Single Switch IGBT Module Replaces DS5529-3 DS5529-4 October 2010 (LN27613) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 1800A Non Punch Through Silicon IC(PK) (max) 3600A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the a

 0.747. Size:487K  dynex
dim1500asm33-tl001.pdf

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DIM1500ASM33-TL001 Single Switch IGBT Module DS6103-1 June 2013 (LN30625) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10.2kV Isolation IC (max) 1500A 10s Short Circuit Withstand IC(PK) (max) 3000A High Thermal Cycling Capability * Measured at the auxiliary terminals High Current Density Enhanced DMOS SPT I

 0.748. Size:405K  dynex
dim400dcm17-a.pdf

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DIM400DCM17-A000 IGBT Chopper Module Replaces DS5490-4 DS5490-5 March 2011 (LN28169) KEY PARAMETERS 0.528FEATURES 6 x O70.216VCES 1700V 10s Short Circuit Withstand VCE(sat) * (typ) 2.7V screwing depth0.240IC (max) 400A High Thermal Cycling Capability max 8IC(PK) (max) 800A 0.253 Non Punch Through Silicon * Measured at the power

 0.749. Size:338K  dynex
dim400ddm12-a.pdf

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DIM400DDM12-A000 Dual Switch IGBT Module Replaces DS5532-3.1 DS5532-4 November 2009 (LN26754) FEATURES KEY PARAMETERS 280.56 x O70.2 10s Short Circuit Withstand 16 0.218VCES 1200V VCE(sat) * (typ) 2.2 V High Thermal Cycling Capability screwing depth0.2 0.240 44IC (max) 400A max 8 Non Punch Through Silicon 0.2 0.253 57IC(PK) (max) 800A

 0.750. Size:484K  dynex
dim1000xsm33-tl001.pdf

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DIM1000XSM33-TL001 Single Switch IGBT Module DS6104-1 June 2013 (LN30632) FEATURES KEY PARAMETERS 10.2kV Isolation VCES 3300V VCE(sat) * (typ) 2.0V Low VCE(sat) Device IC (max) 1000A 10s Short Circuit Withstand IC(PK) (max) 2000A High Thermal Cycling Capability * Measured at the auxiliary terminals High Current Density Enhanced DMOS SPT I

 0.751. Size:486K  dynex
dim1500asm33-ts001.pdf

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DIM1500ASM33-TS001 Single Switch IGBT Module DS6095-1 April 2013 (LN30405) FEATURES KEY PARAMETERS 10.2kV Isolation VCES 3300V VCE(sat) * (typ) 2.2V 10s Short Circuit Withstand IC (max) 1500A High Thermal Cycling Capability IC(PK) (max) 3000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base With A

 0.752. Size:499K  dynex
dim1500esm33-ts.pdf

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DIM1500ESM33-TS000 Single Switch IGBT Module Replaces DS6072-3 DS6072-4 April 2013 (LN30425) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 1500A Soft Punch Through Silicon IC(PK) (max) 3000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals

 0.753. Size:201K  dynex
dim800dcm12-a.pdf

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DIM800DCM12-A000DIM800DCM12-A000IGBT Chopper ModuleReplaces July 2002 version DS5548-2.0 DS5548-FEATURES KEY PARAMETERSVCES 1200V 10s Short Circuit WithstandVCE(sat)* (typ) 2.2V High Thermal Cycling CapabilityIC (max) 800AIC(PK) (max) 1600A Non Punch Through Silicon*(measured at the power busbars and not the auxiliary terminals) Isolated MMC Base with AlN Substrates

 0.754. Size:421K  dynex
dim800fsm17-a.pdf

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DIM800FSM17-A000 Single Switch IGBT Module Replaces DS5461-3.2 DS5461-4 November 2010 (LN27717) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1700V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 800A Non Punch Through Silicon IC(PK) (max) 1600A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the

 0.755. Size:390K  dynex
dim800ddm12-a.pdf

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DIM800DDM12-A000 Dual Switch IGBT Module Replaces DS5528-3.0 DS5528-4 October 2009 (LN26748) FEATURES KEY PARAMETERS 280.56 x O70.2 10s Short Circuit Withstand 16 0.218VCES 1200V VCE(sat) * (typ) 2.2 V High Thermal Cycling Capability screwing depth0.2 0.240 44IC (max) 800A max 8 Non Punch Through Silicon 0.2 0.253 57IC(PK) (

 0.756. Size:463K  dynex
dim2400esm17-a.pdf

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DIM2400ESM17-A000 Single Switch IGBT Module Replaces DS54447-5 DS5447-6 June 2012 (LN29603) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1700V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 2400A Non Punch Through Silicon IC(PK) (max) 4800A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the aux

 0.757. Size:418K  dynex
dim1600fss12-a.pdf

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DIM1600FSS12-A000 Single Switch IGBT Module Replaces DS5541-2.4 DS5541-3 October 2010 (LN27660) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V Non Punch Through Silicon IC (max) 1600A Isolated Cu Base with Al2O3 Substrates IC(PK) (max) 3200A Lead Free construction * Measured at the power busbars, not the auxiliary

 0.758. Size:500K  dynex
dim1500esm33-tl.pdf

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DIM1500ESM33-TL000 Single Switch IGBT Module DS6112-1 June 2013 (LN30640) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat)* (typ) 2.0V 10s Short Circuit Withstand IC (max) 1500A High Thermal Cycling Capability IC(PK) (max) 3000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base With

 0.759. Size:420K  dynex
dim1200fsm12-a.pdf

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DIM1200FSM12-A000 Single Switch IGBT Module Replaces DS5547-3.1 DS5547-4 October 2010 (LN27662) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 1200A Non Punch Through Silicon IC(PK) (max) 2400A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the

 0.760. Size:437K  dynex
dim2400esm12-a.pdf

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DIM2400ESM12-A000 Single Switch IGBT Module Replaces DS5536-3.0 DS5536-4 October 2010 (LN27615) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 2400A Non Punch Through Silicon IC(PK) (max) 4800A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the

 0.761. Size:485K  dynex
dim1000xsm33-ts001.pdf

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DIM1000XSM33-TS001 Single Switch IGBT Module DS6126-1 October 2013 (LN31016) FEATURES KEY PARAMETERS 10.2kV Isolation VCES 3300V VCE(sat) * (typ) 2.2V 10s Short Circuit Withstand IC (max) 1000A High Thermal Cycling Capability IC(PK) (max) 2000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base With

 0.762. Size:423K  dynex
dim600ddm17-a.pdf

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DIM600DDM17-A000 Dual Switch IGBT Module Replaces DS5596-2 DS5596-3 December 2013 (LN31169) FEATURES KEY PARAMETERS 280.56 x O70.2 10s Short Circuit Withstand 16 0.218VCES 1700V VCE(sat) * (typ) 2.7 V High Thermal Cycling Capability screwing depth0.2 0.240 44IC (max) 600A max 8 Non Punch Through Silicon 0.2 0.253 57 IC(PK) (ma

 0.763. Size:445K  dynex
dim800dcm17-a.pdf

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DIM800DCM17-A000 IGBT Chopper Module Replaces DS5444-4.2 DS5444-5 April 2011 (LN26752) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1700V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 800A Non Punch Through Silicon IC(PK) (max) 1600A Isolated AlSiC Base With AlN Substrates * Measured at the power busbars, not the auxiliary

 0.764. Size:392K  dynex
dim400ddm17-a.pdf

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DIM400DDM17-A000 Dual Switch IGBT Module Replaces DS5549-4.1 June 2002 DS5549-5 June 2009 (LN26749) FEATURES KEY PARAMETERS 280.56 x O70.2 10s Short Circuit Withstand 16 0.218VCES 1700V VCE(sat) * (typ) 2.7 V High Thermal Cycling Capability screwing depth0.2 0.240 44IC (max) 400A max 8 Non Punch Through Silicon 0.2 0.253 57I

 0.765. Size:393K  dynex
dim800ddm17-a.pdf

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DIM800DDM17-A000 Dual Switch IGBT Module Replaces DS5433-4.1 July 2002 DS5433-5 June 2009 (LN26751) FEATURES KEY PARAMETERS 280.56 x O70.2 10s Short Circuit Withstand 16 0.218VCES 1700V VCE(sat) * (typ) 2.7 V High Thermal Cycling Capability screwing depth0.2 0.240 44IC (max) 800A max 8 Non Punch Through Silicon 0.2 0.253 57I

 0.766. Size:421K  dynex
dim1600fsm17-a.pdf

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DIM1600FSM17-A000 Single Switch IGBT Module Replaces DS5455-3.2 DS5455-4 October 2010 (LN27663) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1700V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 1600A Non Punch Through Silicon IC(PK) (max) 3200A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the

 0.767. Size:425K  dynex
dim100phm33-f.pdf

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DIM100PHM33-F000 Half Bridge IGBT Module Replaces DS5764-1.2 DS5764-2 October 2011 (LN28815) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.8V High Thermal Cycling Capability IC (max) 100A Soft Punch Through Silicon IC(PK) (max) 200A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals

 0.768. Size:421K  dynex
dim400pbm17-a.pdf

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DIM400PBM17-A000 IGBT Bi-Directional Switch Module Replaces DS5524-2.3 DS5524-3 November 2010 (LN27710) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VDRM 1700V VT* (typ) 4.9V High Thermal Cycling Capability IC (max) 400A Non Punch Through Silicon IC(PK) (max) 800A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not th

 0.769. Size:414K  elm
elm14702aa-n.pdf

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Single N-channel MOSFET with schottky diodeELM14702AA-NGeneral description Features ELM14702AA-N uses advanced trench Vds=30V Schottky diodetechnology to provide excellent Rds(on) Id=11A Vds(V)=30Vand low gate charge. Rds(on)

 0.770. Size:414K  elm
elm14409aa.pdf

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Single P-channel MOSFETELM14409AA-NGeneral description Features ELM14409AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-15A (Vgs=-10V)resistance. Rds(on)

 0.771. Size:586K  elm
elm13424ca.pdf

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Single N-channel MOSFETELM13424CA-SGeneral description Features ELM13424CA-S uses advanced trench technology Vds=30Vto provide excellent Rds(on), low gate charge and Id=3.8A (Vgs=10V)operation with gate voltages as low as 2.5V. Rds(on)

 0.772. Size:395K  elm
elm18814ba.pdf

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(common drain)Dual N-channel MOSFET ELM18814BA-SGeneral description Features ELM18814BA-S uses advanced trench technology Vds=20Vto provide excellent Rds(on), low gate charge and Id=7.5A (Vgs=10V)operation with gate voltages as low as 1.8V and internal Rds(on)

 0.773. Size:458K  elm
elm14430aa.pdf

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Single N-channel MOSFETELM14430AA-NGeneral description Features ELM14430AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=18A (Vgs=10V)resistance. Rds(on)

 0.774. Size:385K  elm
elm13421ca.pdf

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Single P-channel MOSFETELM13421CA-SGeneral description Features ELM13421CA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-2.6A (Vgs=-10V)resistance. Rds(on)

 0.775. Size:394K  elm
elm14427aa.pdf

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Single P-channel MOSFETELM14427AA-NGeneral description Features ELM14427AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-12.5A (Vgs=-20V)resistance. Internal ESD protection is included. Rds(on)

 0.776. Size:385K  elm
elm13414ca.pdf

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Single N-channel MOSFETELM13414CA-SGeneral description Features ELM13414CA-S uses advanced trench technology Vds=20Vto provide excellent Rds(on), low gate charge and Id=4.2A (Vgs=4.5V)operation with gate voltages as low as 1.8V. Rds(on)

 0.777. Size:410K  elm
elm14411aa.pdf

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Single P-channel MOSFETELM14411AA-NGeneral description Features ELM14411AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-8A (Vgs=-10V)resistance. Rds(on)

 0.778. Size:389K  elm
elm14822aa.pdf

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Dual N-channel MOSFETELM14822AA-NGeneral description Features ELM14822AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on) and low gate charge. Id=8.5A (Vgs=10V) Rds(on)

 0.779. Size:785K  elm
elm13419ca.pdf

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P MOSFETELM13419CA-S ELM13419CA-S P Vds=-20V MOSFET Id=-3.5A (Vgs=-10V) ESD Rds(on)

 0.780. Size:394K  elm
elm14419aa.pdf

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Single P-channel MOSFETELM14419AA-NGeneral description Features ELM14419AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-9.7A (Vgs=-10V)resistance. Rds(on)

 0.781. Size:401K  elm
elm14468aa.pdf

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Single N-channel MOSFETELM14468AA-NGeneral description Features ELM14468AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=11.6A (Vgs=10V)resistance. Rds(on)

 0.782. Size:389K  elm
elm14425aa.pdf

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Single P-channel MOSFETELM14425AA-NGeneral description Features ELM14425AA-N uses advanced trench technology to Vds=-38Vprovide excellent Rds(on), low gate charge and low gate Id=-14A (Vgs=-20V)resistance. Internal ESD protection is included. Rds(on)

 0.783. Size:652K  elm
elm13416ca.pdf

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Single N-channel MOSFETELM13416CA-SGeneral description Features ELM13416CA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and operation Id=6.5A (Vgs=4.5V)with gate voltages as low as 1.8V and internal ESD Rds(on)

 0.784. Size:406K  elm
elm17400fa.pdf

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Single N-channel MOSFETELM17400FA-SGeneral description Features ELM17400FA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and operation Id=1.7A (Vgs=10V)with gate voltages as low as 2.5V. Rds(on)

 0.785. Size:413K  elm
elm16405ea.pdf

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Single P-channel MOSFETELM16405EA-SGeneral description Features ELM16405EA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-5A (Vgs=-10V)resistance. Rds(on)

 0.786. Size:428K  elm
elm14408aa.pdf

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Single N-channel MOSFETELM14408AA-NGeneral description Features ELM14408AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=12A (Vgs=10V)resistance. Rds(on)

 0.787. Size:438K  elm
elm16408ea.pdf

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Single N-channel MOSFETELM16408EA-SGeneral description Features ELM16408EA-S uses advanced trench technology Vds=20Vto provide excellent Rds(on), low gate charge and Id=8.8A (Vgs=10V)operation with gate voltages as low as 1.8V and internal Rds(on)

 0.788. Size:385K  elm
elm13413ca.pdf

M1
M1

Single P-channel MOSFETELM13413CA-SGeneral description Features ELM13413CA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-3A (Vgs=-4.5V)resistance. Rds(on)

 0.789. Size:492K  elm
elm13434ca.pdf

M1
M1

Single N-channel MOSFETELM13434CA-SGeneral description Features The ELM13434CA-S uses advanced trench technology to Vds=30Vprovide excellent RDS(ON) and low gate charge. This Id=4.2A (Vgs=10V)device is suitable for use as a load switch or in PWM Rds(on)

 0.790. Size:386K  elm
elm17401fa.pdf

M1
M1

Single P-channel MOSFETELM17401FA-SGeneral description Features ELM17401FA-S uses advanced trench technology Vds=-30Vto provide excellent Rds(on), low gate charge and Id=-1.2A (Vgs=-10V)operation with gate voltages as low as 2.5V. Rds(on)

 0.791. Size:376K  elm
elm17412ga.pdf

M1
M1

Single N-channel MOSFETELM17412GA-SGeneral description Features ELM17412GA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and operation Id=2.1A (Vgs=10V)with gate voltages as low as 2.5V. Rds(on)

 0.792. Size:390K  elm
elm18801ba.pdf

M1
M1

Dual P-channel MOSFETELM18801BA-SGeneral description Features ELM18801BA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on) and low gate charge. Internal Id=-4.7A (Vgs=-4.5V)ESD protection is included. Rds(on)

 0.793. Size:399K  elm
elm14466aa.pdf

M1
M1

Single N-channel MOSFETELM14466AA-NGeneral description Features ELM14466AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=9.4A (Vgs=10V)resistance. Rds(on)

 0.794. Size:395K  elm
elm14806aa.pdf

M1
M1

Dual N-channel MOSFETELM14806AA-NGeneral description Features ELM14806AA-N uses advanced trench technology Vds=20Vto provide excellent Rds(on), low gate charge and Id=9.4A (Vgs=10V)operation with gate voltages as low as 1.8V and internal Rds(on)

 0.795. Size:782K  elm
elm13400ca-s.pdf

M1
M1

Single N-channel MOSFETELM13400CA-SGeneral description Features ELM13400CA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=5.8A (Vgs=10V)resistance. Rds(on)

 0.796. Size:401K  elm
elm14828aa.pdf

M1
M1

Dual N-channel MOSFETELM14828AA-NGeneral description Features ELM14828AA-N uses advanced trench technology to Vds=60Vprovide excellent Rds(on) and low gate charge. Id=4.5A (Vgs=10V) Rds(on)

 0.797. Size:395K  elm
elm18822ba.pdf

M1
M1

(common drain)Dual N-channel MOSFET ELM18822BA-SGeneral description Features ELM18822BA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on) and low gate charge. Id=7A (Vgs=10V) Rds(on)

 0.798. Size:388K  elm
elm13418ca.pdf

M1
M1

Single N-channel MOSFETELM13418CA-SGeneral description Features ELM13418CA-S uses advanced trench technology Vds=30Vto provide excellent Rds(on), low gate charge and Id=3.8A (Vgs=10V)operation with gate voltages as low as 2.5V. Rds(on)

 0.799. Size:579K  elm
elm16601ea.pdf

M1
M1

Complementary MOSFET ELM16601EA-SGeneral Description Features ELM16601EA-S uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=30V Vds=-30Vand low gate charge. Id=3.4A(Vgs=10V) Id=-2.3A(Vgs=-10V) Rds(on)

 0.800. Size:569K  elm
elm14604aa.pdf

M1
M1

Complementary MOSFET ELM14604AA-NGeneral Description Features ELM14604AA-N uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=30V Vds=-30Vand low gate charge. Id=6.9A(Vgs=10V) Id=-5A(Vgs=-10V) Rds(on)

 0.801. Size:624K  elm
elm14614aa.pdf

M1
M1

Complementary MOSFET ELM14614AA-NGeneral Description Features ELM14614AA-N uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=40V Vds=-40Vand low gate charge. Id=6A(Vgs=10V) Id=-5A(Vgs=-10V) Rds(on)

 0.802. Size:389K  elm
elm14801aa.pdf

M1
M1

Dual P-channel MOSFETELM14801AA-NGeneral description Features ELM14801AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on) and low gate charge. Id=-5A (Vgs=-10V) Rds(on)

 0.803. Size:388K  elm
elm16401ea.pdf

M1
M1

Single P-channel MOSFETELM16401EA-SGeneral description Features ELM16401EA-S uses advanced trench technology Vds=-30Vto provide excellent Rds(on), low gate charge and Id=-5A (Vgs=-10V)operation with gate voltages as low as 2.5V. Rds(on)

 0.804. Size:389K  elm
elm16402ea.pdf

M1
M1

Single N-channel MOSFETELM16402EA-SGeneral description Features ELM16402EA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=6.9A (Vgs=10V)resistance. Rds(on)

 0.805. Size:390K  elm
elm14420aa.pdf

M1
M1

Single N-channel MOSFETELM14420AA-NGeneral description Features ELM14420AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=13.7A (Vgs=10V)resistance. Rds(on)

 0.806. Size:220K  elm
elm13403ca.pdf

M1
M1

Single P-channel MOSFETELM13403CA-SGeneral description Features ELM13403CA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-2.6A (Vgs=-10V)resistance. Rds(on)

 0.807. Size:388K  elm
elm16409ea.pdf

M1
M1

Single P-channel MOSFETELM16409EA-SGeneral description Features ELM16409EA-S uses advanced trench technology Vds=-20Vto provide excellent Rds(on), low gate charge and Id=-5A (Vgs=-4.5V)operation with gate voltages as low as 1.8V and internal Rds(on)

 0.808. Size:670K  elm
elm14606aa.pdf

M1
M1

Complementary MOSFET ELM14606AA-NGeneral Description Features ELM14606AA-N uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=30V Vds=-30V and low gate charge. Id=6.9A(Vgs=10V) Id=-6A(Vgs=-10V) Rds(on)

 0.809. Size:781K  elm
elm13407ca-s.pdf

M1
M1

Single P-channel MOSFETELM13407CA-SGeneral description Features ELM13407CA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-4.1A (Vgs=-10V)resistance. Rds(on)

 0.810. Size:392K  elm
elm18806ba.pdf

M1
M1

(common drain)Dual N-channel MOSFET ELM18806BA-SGeneral description Features ELM18806BA-S uses advanced trench technology Vds=20Vto provide excellent Rds(on), low gate charge and Id=7A (Vgs=4.5V)operation with gate voltages as low as 1.8V and internal Rds(on)

 0.811. Size:385K  elm
elm13409ca.pdf

M1
M1

Single P-channel MOSFETELM13409CA-SGeneral description Features ELM13409CA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-2.6A (Vgs=-10V)resistance. Rds(on)

 0.812. Size:410K  elm
elm17408ga.pdf

M1
M1

Single N-channel MOSFETELM17408GA-SGeneral description Features ELM17408GA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and operation Id=2.2A (Vgs=4.5V)with gate voltages as low as 1.8V. Rds(on)

 0.813. Size:573K  elm
elm16604ea.pdf

M1
M1

Complementary MOSFET ELM16604EA-SGeneral Description Features ELM16604EA-S uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=20V Vds=-20Vand low gate charge. Id=3.4A(Vgs=4.5V) Id=-2.5A(Vgs=-4.5V) Rds(on)

 0.814. Size:410K  elm
elm14805aa.pdf

M1
M1

Dual P-channel MOSFETELM14805AA-NGeneral description Features ELM14805AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on) and low gate charge. Id=-8A (Vgs=-20V) Rds(on)

 0.815. Size:409K  elm
elm14407aa.pdf

M1
M1

Single P-channel MOSFETELM14407AA-NGeneral description Features ELM14407AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-12A (Vgs=-20V)resistance. Rds(on)

 0.816. Size:373K  elm
elm13401ca.pdf

M1
M1

Single P-channel MOSFETELM13401CA-SGeneral description Features ELM13401CA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-4.2A (Vgs=-10V)resistance. Rds(on)

 0.817. Size:392K  elm
elm18810ba.pdf

M1
M1

(common drain)Dual N-channel MOSFET ELM18810BA-SGeneral description Features ELM18810BA-S uses advanced trench technology Vds=20Vto provide excellent Rds(on), low gate charge and Id=7A (Vgs=4.5V)operation with gate voltages as low as 1.8V and internal Rds(on)

 0.818. Size:415K  elm
elm14406aa.pdf

M1
M1

Single N-channel MOSFETELM14406AA-NGeneral description Features ELM14406AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=11.5A (Vgs=10V)resistance. Rds(on)

 0.819. Size:382K  elm
elm14440aa.pdf

M1
M1

Single N-channel MOSFETELM14440AA-NGeneral description Features ELM14440AA-N uses advanced trench technology to Vds=60Vprovide excellent Rds(on), low gate charge and low gate Id=5A (Vgs=10V)resistance. Rds(on)

 0.820. Size:388K  elm
elm14826aa.pdf

M1
M1

Dual N-channel MOSFETELM14826AA-NGeneral description Features ELM14826AA-N uses advanced trench technology to Vds=60Vprovide excellent Rds(on) and low gate charge. Id=6.3A (Vgs=10V) Rds(on)

 0.821. Size:1111K  elm
elm14803ab.pdf

M1
M1

Dual P-channel MOSFETELM14803AB-NGeneral description Features ELM14803AB-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on) and low gate charge. Id=-5A (Vgs=-10V) Rds(on)

 0.822. Size:434K  elm
elm14418aa.pdf

M1
M1

Single N-channel MOSFETELM14418AA-NGeneral description Features ELM14418AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=11.5A (Vgs=20V)resistance. Rds(on)

 0.823. Size:593K  elm
elm17600ga.pdf

M1
M1

Complementary MOSFET ELM17600GA-SGeneral Description Features ELM17600GA-S uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=20V Vds=-20Vand low gate charge. Internal ESD Id=0.9A(Vgs=4.5V) Id=-0.6A(Vgs=-4.5V)protection is included. Rds(on)

 0.824. Size:385K  elm
elm16800ea.pdf

M1
M1

Dual N-channel MOSFETELM16800EA-SGeneral description Features ELM16800EA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on) and low gate charge. Id=3.4A (Vgs=10V) Rds(on)

 0.825. Size:394K  elm
elm14405aa.pdf

M1
M1

Single P-channel MOSFETELM14405AA-NGeneral description Features ELM14405AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-6A (Vgs=-10V)resistance. Rds(on)

 0.826. Size:411K  elm
elm17800ga.pdf

M1
M1

Dual N-channel MOSFETELM17800GA-SGeneral description Features ELM17800GA-S uses advanced trench technology Vds=20Vto provide excellent Rds(on), low gate charge and Id=0.9A (Vgs=4.5V)operation with gate voltages as low as 1.8V and internal Rds(on)

 0.827. Size:386K  elm
elm16403ea.pdf

M1
M1

Single P-channel MOSFETELM16403EA-SGeneral description Features ELM16403EA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-6A (Vgs=-10V)resistance. Rds(on)

 0.828. Size:402K  elm
elm14404aa.pdf

M1
M1

Single N-channel MOSFETELM14404AA-NGeneral description Features ELM14404AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=8.5A (Vgs=10V)resistance. Rds(on)

 0.829. Size:405K  elm
elm13402ca.pdf

M1
M1

Single N-channel MOSFETELM13402CA-SGeneral description Features ELM13402CA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=4A (Vgs=10V)resistance. Rds(on)

 0.830. Size:406K  elm
elm13406ca.pdf

M1
M1

Single N-channel MOSFETELM13406CA-SGeneral description Features ELM13406CA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=3.6A (Vgs=10V)resistance. Rds(on)

 0.831. Size:718K  elm
elm13415ca.pdf

M1
M1

Single P-channel MOSFETELM13415CA-SGeneral description Features ELM13415CA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-4A (Vgs=-4.5V)resistance. Internal ESD protection is included. Rds(on)

 0.832. Size:410K  elm
elm16400ea.pdf

M1
M1

Single N-channel MOSFETELM16400EA-SGeneral description Features ELM16400EA-S uses advanced trench technology Vds=30Vto provide excellent Rds(on), low gate charge and Id=6.9A (Vgs=10V)operation with gate voltages as low as 2.5V. Rds(on)

 0.833. Size:390K  elm
elm14423aa.pdf

M1
M1

Single P-channel MOSFETELM14423AA-NGeneral description Features ELM14423AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-15A (Vgs=-20V)resistance. Internal ESD protection is included. Rds(on)

 0.834. Size:927K  elm
elm14354aa.pdf

M1
M1

Single N-channel MOSFETELM14354AA-NGeneral description Features ELM14354AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=23A (Vgs=10V)resistance. Rds(on)

 0.835. Size:392K  elm
elm14812aa.pdf

M1
M1

Dual N-channel MOSFETELM14812AA-NGeneral description Features ELM14812AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on) and low gate charge. Id=6.9A (Vgs=10V) Rds(on)

 0.836. Size:391K  elm
elm13404ca.pdf

M1
M1

Single N-channel MOSFETELM13404CA-SGeneral description Features ELM13404CA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=5.8A (Vgs=10V)resistance. Rds(on)

 0.837. Size:392K  elm
elm14800aa.pdf

M1
M1

Dual N-channel MOSFETELM14800AA-NGeneral description Features ELM14800AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on) and low gate charge. Id=6.9A (Vgs=10V) Rds(on)

 0.838. Size:182K  foshan
mje13003m1.pdf

M1
M1

MJE13003M1(3DD13003M1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

 0.839. Size:972K  globaltech semi
gsm1023.pdf

M1
M1

GSM1023 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM1023, P-Channel enhancement mode -20V/-0.45A,RDS(ON)=620m@VGS=-4.5V MOSFET, uses Advanced Trench -20V/-0.35A,RDS(ON)=860m@VGS=-2.5V Technology to provide excellent RDS(ON), low -20V/-0.25A,RDS(ON)=1450m@VGS=-1.8V gate charge. Low Offset (Error) Voltage These devices are particula

 0.840. Size:995K  globaltech semi
gsm1012e.pdf

M1
M1

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1012E, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/0.5A,RDS(ON)=420m@VGS=2.5V provide excellent RDS(ON), low gate charge. These 20V/0.4A,RDS(ON)=560m@VGS=1.8V devices are particularly suited for low voltage Low Offset (Error) Voltage power

 0.841. Size:893K  globaltech semi
gsm1433.pdf

M1
M1

GSM1433 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM1433, P-Channel enhancement mode -30V/-3.0A , RDS(ON)= 150m@VGS=-10.0V MOSFET, uses Advanced Trench Technology to -30V/-2.6A , RDS(ON)= 185m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly su

 0.842. Size:1003K  globaltech semi
gsm1072.pdf

M1
M1

GSM1072 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1072, N-Channel enhancement mode 20V/0.8A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/0.7A,RDS(ON)=420m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/0.6A,RDS(ON)=560m@VGS=1.8V Low Offset (Error) Voltage These devices are particularly suited for low

 0.843. Size:540K  globaltech semi
gsm1330s.pdf

M1
M1

GSM1330S 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM1330S, N-Channel enhancement mode 60V/0.5A , RDS(ON)= 7.5@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/0.05A , RDS(ON)= 7.5@VGS=5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

 0.844. Size:907K  globaltech semi
gsm1912.pdf

M1
M1

GSM1912 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1912, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=340m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=580m@VGS=1.8V Low Offset (Error) Voltage These devices are particularly suited f

 0.845. Size:1944K  globaltech semi
gsm1563.pdf

M1
M1

20V N & P Pair Enhancement Mode MOSFET Product Description Features GSM1563, N & P Pair enhancement mode N-ChannelMOSFET, uses Advanced Trench Technology to 20V/1.0A,RDS(ON)=280m@VGS=4.5V provide excellent RDS(ON), low gate charge. 20V/0.8A,RDS(ON)=340m@VGS=2.5V These devices are particularly suited for low 20V/0.7A,RDS(ON)=580m@VGS=1.8V voltage power management, such a

 0.846. Size:934K  globaltech semi
gsm1304.pdf

M1
M1

GSM1304 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1304, N-Channel enhancement mode 20V/1.8A , RDS(ON)= 280m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/1.5A , RDS(ON)= 340m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/1.2A , RDS(ON)= 680m@VGS=1.8V Super high density cell design for extremely These device

 0.847. Size:1054K  globaltech semi
gsm1026s.pdf

M1
M1

GSM1026S 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM1026S, N-Channel enhancement mode 60V/0.5A,RDS(ON)=2.4@VGS=10V MOSFET, uses Advanced Trench 60V/0.2A,RDS(ON)=3.0@VGS=4.5V Technology to provide excellent RDS(ON), low Super high density cell design for extremely gate charge. low RDS(ON) These devices are particularly suited for low Exception

 0.848. Size:621K  globaltech semi
gsm1013e.pdf

M1
M1

GSM1013E 20V P-Channel Enhancement Mode MOSFET Product Description Features -20V/-0.6A,RDS(ON)=800m@VGS=-4.5V GSM1013E, P-Channel enhancement mode -20V/-0.5A,RDS(ON)=950m@VGS=-2.5V MOSFET, uses Advanced Trench Technology to -20V/-0.4A,RDS(ON)=1250m@VGS=-1.8V provide excellent RDS(ON), low gate charge. Low Offset (Error) Voltage Low-Voltage OperationThese devi

 0.849. Size:625K  globaltech semi
gsm1073e.pdf

M1
M1

GSM1073E 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM1073E, P-Channel enhancement mode -20V/-0.6A,RDS(ON)=800m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-0.5A,RDS(ON)=950m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-0.4A,RDS(ON)=1250m@VGS=-1.8V Low Offset (Error) Voltage These devices are particularly sui

 0.850. Size:938K  globaltech semi
gsm1810.pdf

M1
M1

GSM1810 100V P-Channel Enhancement Mode MOSFET Product Description Features GSM1810, P-Channel enhancement mode -100V/-2.0A,RDS(ON)=230m@VGS=-10V MOSFET, uses Advanced Trench Technology to -100V/-1.0A,RDS(ON)=245m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

 0.851. Size:506K  globaltech semi
gsm1032.pdf

M1
M1

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM1032, N-Channel enhancement mode 30V/0.6A,RDS(ON)=440m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 30V/0.5A,RDS(ON)=500m@VGS=2.5V provide excellent RDS(ON), low gate charge. 30V/0.4A,RDS(ON)=750m@VGS=1.8V These devices are particularly suited for low Low Offset (Error) Voltage voltage

 0.852. Size:987K  globaltech semi
gsm1012.pdf

M1
M1

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1012, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/0.5A,RDS(ON)=420m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/0.4A,RDS(ON)=560m@VGS=1.8V Low Offset (Error) Voltage These devices are particularly suited for low Low-Voltage Operation

 0.853. Size:957K  globaltech semi
gsm1073.pdf

M1
M1

GSM1073 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM1073, P-Channel enhancement mode -20V/-0.45A,RDS(ON)=620m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-0.35A,RDS(ON)=860m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-0.25A,RDS(ON)=1450m@VGS=-1.8V Low Offset (Error) Voltage These devices are part

 0.854. Size:808K  globaltech semi
gsm1413.pdf

M1
M1

GSM1413 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM1413, P-Channel enhancement mode -20V/-3.0A , RDS(ON)= 125m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.4A , RDS(ON)= 160m@VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly sui

 0.855. Size:937K  globaltech semi
gsm1024e.pdf

M1
M1

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1024E, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench 20V/0.5A,RDS(ON)=420m@VGS=2.5V Technology to provide excellent RDS(ON), low 20V/0.4A,RDS(ON)=560m@VGS=1.8V gate charge. Low Offset (Error) Voltage These devices are particularly suited for low

 0.856. Size:936K  globaltech semi
gsm1304e.pdf

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GSM1304E 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1304E, N-Channel enhancement mode 20V/1.8A , RDS(ON)= 320m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/1.5A , RDS(ON)= 450m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/1.2A , RDS(ON)= 580m@VGS=1.8V Super high density cell design for extremely These devi

 0.857. Size:3060K  globaltech semi
gsm1016.pdf

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GSM1016 N & P Pair Enhancement Mode MOSFET Product Description Features GSM1016, N & P Pair enhancement mode N-ChannelMOSFET, uses Advanced Trench Technology to 20V/0.6A,RDS(ON)=360m@VGS=4.5V provide excellent RDS(ON), low gate charge. 20V/0.5A,RDS(ON)=420m@VGS=2.5V 20V/0.4A,RDS(ON)=560m@VGS=1.8V These devices are particularly suited for low P-Channelvoltage power ma

 0.858. Size:515K  globaltech semi
gsm1072e.pdf

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GSM1072E 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1072E, N-Channel enhancement mode 20V/0.8A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/0.7A,RDS(ON)=420m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/0.6A,RDS(ON)=560m@VGS=1.8V Low Offset (Error) Voltage These devices are particularly suited for lo

 0.859. Size:940K  globaltech semi
gsm1024.pdf

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20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1024, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/0.5A,RDS(ON)=420m@VGS=2.5V provide excellent RDS(ON), low gate charge. These 20V/0.4A,RDS(ON)=560m@VGS=1.8V devices are particularly suited for low voltage Low Offset (Error) Voltag

 0.860. Size:873K  globaltech semi
gsm1443.pdf

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GSM1443 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM1443, N-Channel enhancement mode 30V/3.6A , RDS(ON)= 78m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.8A , RDS(ON)= 105m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

 0.861. Size:998K  globaltech semi
gsm1913.pdf

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GSM1913 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM1913, P-Channel enhancement mode -20V/-0.6A,RDS(ON)=600m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-0.5A,RDS(ON)=800m@VGS=-2.5V provide excellent RDS(ON) ,low gate charge. -20V/-0.4A,RDS(ON)=1600m@VGS=-1.8V Low Offset (Error) Voltage These devices are particu

 0.862. Size:1012K  globaltech semi
gsm1013.pdf

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20V P-Channel Enhancement Mode MOSFET Product Description Features GSM1013, P-Channel enhancement mode -20V/-0.6A,RDS(ON)=620m@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-0.5A,RDS(ON)=860m@VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-0.4A,RDS(ON)=1450m@VGS=-1.8V Low Offset (Error) Voltage These devices are particularly suited for low Low-V

 0.863. Size:1193K  globaltech semi
gsm1306.pdf

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GSM1306 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM1306, N-Channel enhancement mode 30V/1.5A , RDS(ON)= 430m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 30V/1.2A , RDS(ON)= 580m@VGS=2.5V provide excellent RDS(ON), low gate charge. 30V/0.6A , RDS(ON)= 860m@VGS=1.8V Super high density cell design for extremely These device

 0.864. Size:1006K  globaltech semi
gsm1303.pdf

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GSM1303 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM1303, P-Channel enhancement mode -20V/-0.45A , RDS(ON)= 600m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-0.35A , RDS(ON)= 800m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-0.25A , RDS(ON)= 1300m@VGS=-1.8V Super high density cell design for extremely These de

 0.865. Size:565K  globaltech semi
gsm1034.pdf

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GSM1034 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM1034, N-Channel enhancement mode 30V/0.6A,RDS(ON)=440m@VGS=4.5V MOSFET, uses Advanced Trench 30V/0.5A,RDS(ON)=500m@VGS=2.5V Technology to provide excellent RDS(ON), low 30V/0.4A,RDS(ON)=720m@VGS=1.8V gate charge. Low Offset (Error) Voltage These devices are particularly suited for low Low-

 0.866. Size:889K  jiaensemi
jfpc18n50c jffm18n50c.pdf

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JFFM18N50C JFPC18N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 500V, RDS(on)typ. = 0.24@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf

 0.867. Size:843K  jiaensemi
jfpc10n60c jffm10n60c.pdf

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JFPC10N60C JFFM10N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 10A, 600V, RDS(on)typ. = 0.68@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performanc

 0.868. Size:908K  jiaensemi
jfpc16n50c jffm16n50c.pdf

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JFPC16N50C JFFM16N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 16A, 500V, RDS(on)typ. = 0.33@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performanc

 0.869. Size:808K  jiaensemi
jfam18n50c.pdf

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JFAM18N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 500V, RDS(on)typ. = 0.24@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and

 0.870. Size:995K  jiaensemi
jffm13n50e.pdf

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JFFM13N50E 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 0.871. Size:525K  jiaensemi
jfpc2n80c jffm12n80c.pdf

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JFPC2N80C JFFM12N80C N- MOS / N-CHANNEL POWER MOSFET RoHS FEATURESLOW THERMAL RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION: ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER S

 0.872. Size:844K  jiaensemi
jfpc11n50c jffm11n50c.pdf

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JFPC11N50C JFFM11N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 11A, 500V, RDS(on)typ. = 0.46@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performanc

 0.873. Size:862K  jiaensemi
jfpc18n60c jffm18n60c.pdf

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JFFM18N60C JFPC18N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 600V, RDS(on)typ. = 0.42@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf

 0.874. Size:518K  jiaensemi
jfpc10n80c jffm10n80c.pdf

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JFPC10N80C JFFM10N80C N- MOS / N-CHANNEL POWER MOSFET RoHS FEATURESLOW THERMAL RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION: ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER

 0.875. Size:692K  jiaensemi
jfpc13n50c jffm13n50c.pdf

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JFPC13N50C JFFM13N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 500V, RDS(on)typ. = 380m@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performanc

 0.876. Size:918K  jiaensemi
jfpc12n60c jffm12n60c.pdf

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JFPC12N60C JFFM12N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 12A, 600V, RDS(on)typ. = 0.52@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performan

 0.877. Size:827K  jiaensemi
jffm13n65d.pdf

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JFFM13N65D 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 0.878. Size:378K  macmic
mm10g3t120b.pdf

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MM10G3T120B1200V 10A IGBTMarch 2020 Version 01 RoHS CompliantPRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery123APPLICATIONS High frequency switching application1.Gate Medical appli

 0.879. Size:268K  macmic
mm137n04k.pdf

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MM137N04K DatasheetN-Channel MOSFETApplications:a Power Supply VDSS RDS(ON)(MAX)ID DC-DC Converters 40V 4m 137AFeatures: Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized BVDSS CapabilityOrdering InformationPark Number Package BrandMM137N04K TO-220 MacMicTC=25 unless otherwise specified

 0.880. Size:314K  macmic
mm15n050p.pdf

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MM15N050P 500V 15A N-Channel MOSFET March 2011 PRELIMINARY RoHS Compliant FEATURES Low drain-source ON resistance High forward transfer admittance Repetitive avalanche ratings Simple drive requirements Ease of paralleling APPLICATIONS 1.GATE Switching power supplies 2.DRAIN Motor controls 3.SOURCE Inverters and choppers Audio a

 0.881. Size:362K  macmic
mm15g3t120b.pdf

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MM15G3T120B1200V 15A IGBTNovember 2019 Version 01 RoHS CompliantPRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery123APPLICATIONS High frequency switching application1.Gate Medical ap

 0.882. Size:412K  macmic
mm109n06k.pdf

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MM1 09 N06K DatasheetN-Channel MOSFETApplications:a Power Supply VDSS RDS(ON)(MAX)ID DC-DC Converters 60V 8m 109AFeatures: Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized BVDSS CapabilityOrdering InformationPark Number Package BrandMM109N06K TO-220 MacMicTC=25 unless otherwise specifi

 0.883. Size:337K  macmic
mm120g3t65bm.pdf

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MM120G3T65BM650V 120A IGBTJune 2020 Version 01 RoHS CompliantPRODUCT FEATURES 650V IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery123APPLICATIONS Motor control1.Gate UPS/PFC2.Collector3.Emitter

 0.884. Size:77K  powerex
pm100cbs060.pdf

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PM100CBS060PM100CBS060Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Intellimod ModuleMAXISS SeriesMulti AXIS Servo IPM100 Amperes/600 VoltsAD EFGHYG GAATERMINAL CODE1. VWPC1 4 7 10 152. WPM3. VWP14. VVPCL (11 TYP.)B J 5. VPN6. VP1P7. VUPCK8. UPW V U N P9. VUP110. VNCQ Z1

 0.885. Size:42K  powerex
cm15tf-12h.pdf

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CM15TF-12HPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Six-IGBT IGBTMODH-Series Module15 Amperes/600 VoltsABL K K MT - DIA.(2 TYP.)GuP SuP GvP SvP GwP SwPPD H EJU V WNGuN SuN GvN SvN GwN SwNQ Q PS S SCDescription:.250 TAB.110 TAB Powerex IGBTMOD Modulesare designed for use in switchingapplications. Each

 0.886. Size:41K  powerex
cm150du-12h.pdf

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CM150DU-12HPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Dual IGBTMODU-Series Module150 Amperes/600 VoltsTC Measured PointAE BF G H U JC2E1 E2 C1D 2 - MountingHoles CVK(6.5 Dia.)LDescription:MN3-M5 Nuts Powerex IGBTMOD ModulesO O are designed for use in switching0.110 - 0.5 TabP Q P applications. Each m

 0.887. Size:42K  powerex
cm150dy-12h.pdf

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CM150DY-12HPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Dual IGBTMODH-Series Module150 Amperes/600 VoltsABH E E HSC2E1 E2 C1GC KSLDescription:R - M5 THD (3 TYP.)Powerex IGBTMOD ModulesP - DIA. (2 TYP.)are designed for use in switching.110 TABapplications. Each module consistsJ J JN Nof two IGBT Transistors

 0.888. Size:84K  powerex
cm150du-12f.pdf

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CM150DU-12FPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignDual IGBTMOD150 Amperes/600 VoltsP - NUTS (3 PLACES)TC MEASURINGPOINTAN DQ (2 PLACES)EC2E1 E2 C1FB GHFDescription:Powerex IGBTMOD Modulesare designed for use in switchingM K K Japplications. Each module consistsRof two IGBT Transisto

 0.889. Size:725K  powersem
psipm100-06.pdf

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Converter - Brake - Inverter ModulePSIPM 100/06Preliminary Data SheetC1V15U15H15 N15S15L15 Q15 V11D15J15 O15 V13A15 A10A5L1P1 R1F15N1F1U1H1V1V4 V7Three Phase Brake Chopper Three PhaseRectifier InverterVRRM = 1600 V VCES = 600 V VCES = 600 VIFAVM = 68 A IC25 = 69 A IC25 = 121 AIFSM = 300 A VCE(sat) = 2.3 V VCE(sat) = 2.3 VECO-TOPTM 1Input R

 0.890. Size:251K  sanrise-tech
srm10n65.pdf

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Datasheet 10A, 650V, N-Channel Power MOSFET SRM10N65General Description Symbol The Sanrise SRM10N65 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM10N65 break down voltage rating is 650V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at hi

 0.891. Size:251K  sanrise-tech
srm10n60.pdf

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Datasheet 10A, 600V, N-Channel Power MOSFET SRM10N60General Description Symbol The Sanrise SRM10N60 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM10N60 break down voltage rating is 600V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at hi

 0.892. Size:251K  sanrise-tech
srm12n65.pdf

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Datasheet 12A, 650V, N-Channel Power MOSFET SRM12N65General Description Symbol The Sanrise SRM12N65 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM12N65 break down voltage rating is 650V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at hi

 0.893. Size:641K  semikron
skm145gal124dn skm145gb124dn.pdf

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 0.894. Size:788K  semikron
skm100gb176d.pdf

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skm195gal063dn skm195gar063dn skm195gb063dn.pdf

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skm145gb066d.pdf

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 0.897. Size:529K  semikron
skm150gal12v.pdf

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SKM150GAL12VAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 231 ATj = 175 CTc =80C 176 AICnom 150 AICRM ICRM = 3xICnom 450 AVGES -20 ... 20 VVCC = 720 VSEMITRANS 2tpsc VGE 20 V Tj =125C 10 sVCES 1200 VTj -40 ... 175 CInverse diodeIF Tc =25C 189 ATj = 175 CSKM150GAL12VTc =80C 141 AIFno

 0.898. Size:376K  semikron
skm300gm12t4.pdf

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SKM300GM12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 422 ATj = 175 CTc =80C 324 AICnom 300 AICRM ICRM = 3xICnom 900 AVGES -20 ... 20 VVCC = 800 VSEMITRANS 3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 353 ATj = 175 CSKM300GM12T4Tc =80C

 0.899. Size:796K  semikron
skm100gb063d.pdf

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skm150gb063d.pdf

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skm100gd063dl.pdf

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skm400gm12t4.pdf

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SKM400GM12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 618 ATj = 175 CTc =80C 475 AICnom 400 AICRM ICRM = 3xICnom 1200 AVGES -20 ... 20 VVCC = 800 VSEMITRANS 3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 440 ATj = 175 CSKM400GM12T4Tc =80

 0.903. Size:798K  semikron
skm145gal176d.pdf

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skm150gb125d.pdf

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SEMITRANS MAbsolute Maximum RatingsValuesUltra Fast IGBT ModulesSymbol Conditions 1)UnitsVCES 1200 VVCGR RGE = 20 k 1200 V SKM 150 GB 125 DIC Tcase = 25/80 C 150 / 100 4) AICM Tcase = 25/80 C; tp = 1 ms 300 / 200 4) APreliminary Data 5)VGES 20 VPtot per IGBT, Tcase = 25 C 1040 WTj, (Tstg) 40 ... +150 (125) CVisol AC, 1 min. 2500 Vhumidity DIN 400

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skm145gal123d.pdf

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skm150gb173d.pdf

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skm150gb12v.pdf

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SKM150GB12VAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 231 ATj = 175 CTc =80C 176 AICnom 150 AICRM ICRM = 3xICnom 450 AVGES -20 ... 20 VVCC = 720 VSEMITRANS 2tpsc VGE 20 V Tj =125C 10 sVCES 1200 VTj -40 ... 175 CInverse diodeIF Tc =25C 189 ATj = 175 CSKM150GB12VTc =80C 141 AIFnom

 0.908. Size:564K  semikron
skm100gar123d.pdf

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skm145gal063dn skm145gb063dn.pdf

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 0.910. Size:498K  semikron
skm100gal12t4.pdf

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SKM100GAL12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 160 ATj = 175 CTc =80C 123 AICnom 100 AICRM ICRM = 3xICnom 300 AVGES -20 ... 20 VVCC = 800 VSEMITRANS 2tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 121 ATj = 175 CSKM100GAL12T

 0.911. Size:599K  semikron
skm150gb123d.pdf

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skm195gb126d.pdf

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skm195gal062d skm195gb062d.pdf

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SEMITRANS MAbsolute Maximum RatingsValuesPT-IGBT ModulesSymbol Conditions 1)UnitsVCES 600 VVCGR RGE = 20 k 600 V SKM 195 GB 062 DIC Tcase = 25/60 C 230 / 195 ASKM 195 GAL 062 D 6)ICM Tcase = 25/60 C; tp = 1 ms 460 / 390 AVGES 20 VPtot per IGBT, Tcase = 25 C 700 WTj, (Tstg) 40 ... +150 (125) CVisol AC, 1 min. 2 500 Vhumidity DIN 40 040 Class Fcl

 0.914. Size:457K  semikron
skm150gb12t4.pdf

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SKM150GB12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 232 ATj = 175 CTc =80C 179 AICnom 150 AICRM ICRM = 3xICnom 450 AVGES -20 ... 20 VVCC = 800 VSEMITRANS2tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 189 ATj = 175 CSKM150GB12T4Tc =80C

 0.915. Size:2747K  semikron
skm145gax123d skm145gay123d.pdf

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SEMITRANS MAbsolute Maximum RatingsValuesIGBT ModulesSymbol Conditions 1)UnitsVCES 1200 VVCGR RGE = 20 k 1200 V SKM 145 GAX 123 D 6)IC Tcase = 25/80 C 145 / 110 ASKM 145 GAY 123 D 6)ICM Tcase = 25/80 C; tp = 1 ms 290 / 220 AVGES 20 VPtot per IGBT, Tcase = 25 C 830 WTj, (Tstg) 40 ... +150 (125) CVisol AC, 1 min. 2500 Vhumidity DIN 40 040 Class F

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skm150gb174d.pdf

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SEMITRANS MAbsolute Maximum RatingsValuesLow Loss IGBT ModulesSymbol Conditions 1)UnitsVCES 1700 VVCGR RGE = 20 k 1700 V SKM 150 GB 174 DIC; ICN Tcase = 25/60 C 180 / 150 AICM Tcase = 25/60 C; tp = 1 ms 360 / 300 AVGES 20 VPreliminary DataPtot per IGBT, Tcase = 25 C 1080 WTj, (Tstg) 40 ... +150 (125) CVisol AC, 1 min. 4) 3400 Vhumidity DIN 40 040

 0.917. Size:376K  semikron
skm150gm12t4g.pdf

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SKM150GM12T4GAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 229 ATj = 175 CTc =80C 177 AICnom 150 AICRM ICRM = 3xICnom 450 AVGES -20 ... 20 VVCC = 800 VSEMITRANS 3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 187 ATj = 175 CSKM150GM12T4GTc =80

 0.918. Size:435K  semikron
skm150gb12vg.pdf

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SKM150GB12VGAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 222 ATj = 175 CTc =80C 169 AICnom 150 AICRM ICRM = 3xICnom 450 AVGES -20 ... 20 VVCC = 720 VSEMITRANS 3tpsc VGE 20 V Tj =125C 10 sVCES 1200 VTj -40 ... 175 CInverse diodeIF Tc =25C 187 ATj = 175 CSKM150GB12VGTc =80C 140 AIFno

 0.919. Size:253K  semikron
skm100gb12v.pdf

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SKM100GB12VAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 159 ATj = 175 CTc =80C 121 AICnom 100 AICRM ICRM = 3xICnom 300 AVGES -20 ... 20 VVCC = 720 VSEMITRANS 2tpsc VGE 20 V Tj =125C 10 sVCES 1200 VTj -40 ... 175 CInverse diodeIF Tc =25C 121 ATj = 175 CSKM100GB12VTc =80C 91 AIFnom 1

 0.920. Size:401K  semikron
skm150gb12t4g.pdf

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SKM150GB12T4GAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 223 ATj = 175 CTc =80C 172 AICnom 150 AICRM ICRM = 3xICnom 450 AVGES -20 ... 20 VVCC = 800 VSEMITRANS3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 183 ATj = 175 CSKM150GB12T4GTc =80

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skm100gal123d.pdf

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skm195gb066d.pdf

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skm145gb123d.pdf

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skm100gb124d.pdf

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skm150gar12t4.pdf

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SKM150GAR12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 232 ATj = 175 CTc =80C 179 AICnom 150 AICRM ICRM = 3xICnom 450 AVGES -20 ... 20 VVCC = 800 VSEMITRANS2tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 189 ATj = 175 CSKM150GAR12T4Tc =80

 0.927. Size:630K  semikron
skm145gal174dn skm145gb174dn.pdf

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skm195gal126d.pdf

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skim120gd176d.pdf

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skm150gar123d.pdf

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skm100gb12t4g.pdf

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SKM100GB12T4GAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 154 ATj = 175 CTc =80C 118 AICnom 100 AICRM ICRM = 3xICnom 300 AVGES -20 ... 20 VVCC = 800 VSEMITRANS3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 118 ATj = 175 CSKM100GB12T4GTc =80

 0.932. Size:798K  semikron
skm145gb176d.pdf

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skm145gar123d.pdf

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skm100gb123d.pdf

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skm200gm12t4.pdf

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SKM200GM12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 314 ATj = 175 CTc =80C 242 AICnom 200 AICRM ICRM = 3xICnom 600 AVGES -20 ... 20 VVCC = 800 VSEMITRANS 3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 229 ATj = 175 CSKM200GM12T4Tc =80C

 0.936. Size:126K  semikron
skm145gb124d.pdf

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SEMITRANS MAbsolute Maximum RatingsValuesLow Loss IGBT ModulesSymbol Conditions 1)UnitsVCES 1200 VVCGR RGE = 20 k 1200 V SKM 145 GB 124 DIC Tcase = 25/70 C 190 / 145 AICM Tcase = 25/70 C; tp = 1 ms 380 / 290 AVGES 20 VPtot per IGBT, Tcase = 25 C 800 WTj, (Tstg) 40 ... + 150 (125) CVisol AC, 1 min. 2 500 Vhumidity DIN 40040 Class Fclimate DIN IEC

 0.937. Size:671K  semikron
skm195gal124dn skm195gb124dn.pdf

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skm100gax173d skm100gay173d.pdf

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SEMITRANS MAbsolute Maximum RatingsValuesIGBT ModulesSymbol Conditions 1)UnitsVCES 1700 VVCGR RGE = 20 k 1700 V SKM 100 GAX 173 D 6)IC Tcase = 25/80 C 110 / 75 ASKM 100 GAY 173 D 6)ICM Tcase = 25/80 C; tp = 1 ms 220 / 150 AVGES 20 VPtot per IGBT/Diode, Tcase = 25 C 625 / 310 WTj, (Tstg) 40 ... +150 (125) CVisol AC, 1 min. 4000 Vhumidity DIN 40 04

 0.939. Size:729K  semikron
skm150gal12t4.pdf

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SKM150GAL12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 232 ATj = 175 CTc =80C 179 AICnom 150 AICRM ICRM = 3xICnom 450 AVGES -20 ... 20 VVCC = 800 VSEMITRANS 2tpsc VGE 15 V Tj =150C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 189 ATj = 175 CSKM150GAL12T4

 0.940. Size:702K  semikron
skm150gb124d.pdf

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skm150gal123d.pdf

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skm100gb12t4.pdf

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SKM100GB12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 160 ATj = 175 CTc =80C 123 AICnom 100 AICRM ICRM = 3xICnom 300 AVGES -20 ... 20 VVCC = 800 VSEMITRANS2tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 121 ATj = 175 CSKM100GB12T4Tc =80C

 0.943. Size:215K  semitronics
sefm150.pdf

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SEMITRONICS CORP. SEFM150 64 Commercial Street, Freeport, N.Y. 11520 N-Channel MOSFET Phone: (516) 623-9400 Fax. (516) 623-6954 FEATURES PACKAGE Isolated Case Hermetically Sealed Package Repetitive Avalanche Rating Dynamic dv/dt Rating Ceramic Eyelets MIL STX Screening Available APPLICATIONS High Reliability Power Supplies CASE

 0.944. Size:302K  sensitron
spm1002.pdf

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SPM1002 SENSITRON SEMICONDUCTOR Technical Data DATASHEET 5278, Rev. - THREE-PHASE IGBT BRIDGE with SiC DIODES, BRAKE MOSFET and INTEGRATED BRAKE RESISTOR DESCRIPTION: 600 VOLT, 30 AMP, THREE PHASE IGBT BRIDGE FAST SWITCHING 3RD GENERATION IGBT SILICON CARBIDE (SiC) 20A 600V ANTI PARALLEL DIODES ZERO RECOVERY AND NO ADDITIONAL LOSSES ON COMPLIMENTARY IGBT

 0.945. Size:143K  sensitron
sradm1007.pdf

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SENSITRON SRADM1007 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5405, REV. - HERMETIC RAD HARD POWER MOSFET FEATURES: Low RDS(on) Single Event Effect (SEE) hardened, o LET 55, Range: 90m VGS = -20V, VDS = 100V Total Ionization Dose (TID) hardened, 100kRad Surface mount SMD-0.5 package Near equivalent to IRHNJ7130 MAXIMUM RATINGS ALL RATINGS AR

 0.946. Size:452K  sensitron
scm1001.pdf

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SENSITRON SCM1001 SEMICONDUCTOR Technical Data DATASHEET 5284, Rev. B Three-Phase IGBT BRIDGE with BRAKE IGBT Three-Phase Input BRIDGE with INRUSH SCR DESCRIPTION: 1200 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE UPPER & LOWER REGENERATIVE BRAKE IGBT SWITCHES USE OF LATEST 4TH GENERATION IGBT AND DIODE TO MINIMIZE TOTAL LOSSES 1200 VOLT, 25 AMP BRAKE IGBT 12

 0.947. Size:151K  sensitron
sradm1004.pdf

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SENSITRON SRADM1004 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5399, REV. - HERMETIC RAD HARD POWER MOSFET FEATURES: Low RDS(on) Single Event Effect (SEE) hardened, LET 55, Range: 90m o VGS = -15V, VDS = 250V o VGS = -20V, VDS = 160V Total Ionization Dose (TID) hardened, 100kRad Surface mount SMD-2 package Near equivalent to IRHNA67260 MAXIMUM RAT

 0.948. Size:143K  sensitron
sradm1005.pdf

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SRADM1005 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5403, REV. - HERMETIC RAD HARD POWER MOSFET FEATURES: Low RDS(on) Single Event Effect (SEE) hardened, o LET 85, Range: 118m VGS = -10V, VDS = 250V VGS = -15V, VDS = 120V o LET 55, Range: 90m VGS = -15V, VDS = 250V VGS = -20V, VDS = 160V Total Ionization Dose (TID) hardened,

 0.949. Size:323K  sensitron
spm1001.pdf

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SPM1001 SENSITRON SEMICONDUCTOR Technical Data DATASHEET 5361, Rev. - THREE-PHASE IGBT BRIDGE with SiC DIODES, BRAKE MOSFET and INTEGRATED BRAKE RESISTOR DESCRIPTION: 600 VOLT, 50 AMP, THREE PHASE IGBT BRIDGE SILICON CARBIDE (SiC) 20A 600V ANTI PARALLEL DIODES ZERO RECOVERY AND NO ADDITIONAL LOSSES ON COMPLIMENTARY IGBT 600V, 22A BRAKE MOSFET INTEGRAT

 0.950. Size:375K  sensitron
spm1004.pdf

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SENSITRON SPM1004 SEMICONDUCTOR TECHNICAL DATA DATASHEET 5280, Rev. - Three-Phase IGBT BRIDGE + HIGH SIDE BRAKE IGBT DESCRIPTION: 1200 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE AND BRAKE IGBT. NEAR HERMETIC PACKAGE. USE OF LATEST 4TH GENERATION IGBT AND DIODE TO MINIMIZE TOTAL LOSSES. AlSiC BASE PLATE FOR HIGH TEMPERATURE CYCLE CAPABILITY. LOW PROFILE L

 0.951. Size:315K  sensitron
spm1005.pdf

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SPM1005 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 5287, Rev. C 600 VOLT, 16 AMP LOW LOSS ULTRAFAST IGBT THREE PHASE BRIDGE MODULE WITH SiC FREEWHEELING DIODE Features SiC Free wheel diode zero reverse recovery loss Isolated base plate Low thermal impedance Aluminum Nitride base Light weight low profile standard package High temperat

 0.952. Size:135K  sensitron
sradm1006.pdf

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SENSITRON SRADM1006 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5404, REV. - HERMETIC RAD HARD POWER MOSFET FEATURES: Low RDS(on) Single Event Effect (SEE) hardened, o LET 55, Range: 90m VGS = -20V, VDS = 100V Total Ionization Dose (TID) hardened, 100kRad Isolated TO-257 package Near equivalent to IRHY7130CM MAXIMUM RATINGS ALL RATINGS ARE AT

 0.953. Size:123K  sensitron
sradm1003.pdf

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SRADM1003 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5398, REV. - HERMETIC RAD HARD POWER MOSFET FEATURES: Low RDS(on) Single Event Effect (SEE) hardened, LET 55, Range: 90m o VGS = -15V, VDS = 250V o VGS = -20V, VDS = 160V Total Ionization Dose (TID) hardened, 100kRad TO-254 package Near equivalent to IRHMS67260 MAXIMUM RATINGS ALL RAT

 0.954. Size:136K  sensitron
sradm1008.pdf

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SRADM1008 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5406, REV. - HERMETIC RAD HARD POWER MOSFET FEATURES: Low RDS(on) Single Event Effect (SEE) hardened, o LET 85, Range: 118m VGS = -10V, VDS = 250V VGS = -15V, VDS = 120V o LET 55, Range: 90m VGS = -15V, VDS = 250V VGS = -20V, VDS = 160V Total Ionization Dose (TID) hardened

 0.955. Size:291K  sensitron
spm1008.pdf

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SENSITRON SPM1008 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5411, REV. - 1200 VOLT, 30 AMP THREE PHASE SILICON CARBIDE MOSFET BRIDGE FEATURES: 80m typical on-resistance Isolated base plate Aluminum Nitride substrate Light Weight Low Profile Standard Package High Temperature Engineering Plastic Shell Construction Schematic Diagram: MAXIMUM RATIN

 0.956. Size:174K  sensitron
sradm1002.pdf

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SENSITRON SRADM1002 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5311, REV. A HERMETIC RAD HARD POWER MOSFET N-CHANNEL QUAD FEATURES: Four 250 Volt, 0.36 Ohm, 4.4A RAD HARD MOSFETs Single Event Effect (SEE) hardened, LET 55, Range: 90m o VGS = -15V, VDS = 250V o VGS = -20V, VDS = 160V Total Ionization Dose (TID) hardened, 100kRad (Level R) Fast Switching

 0.957. Size:279K  sensitron
spm1006.pdf

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SENSITRON SPM1006 SEMICONDUCTOR TECHNICAL DATA DATASHEET 5384, Rev. B 600 VOLT, 40 AMP LOW LOSS ULTRAFAST IGBT THREE PHASE BRIDGE MODULE Features Trench stop third generation IGBT Soft, fast recovery diode for minimal EMI Isolated base plate Aluminum nitride substrate Light weight low profile standard package High temperature engineering plast

 0.958. Size:222K  sensitron
spm1007.pdf

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SENSITRON SPM1007 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5393, REV. B 1200 VOLT, 29 AMP THREE PHASE SILICON CARBIDE MOSFET BRIDGE WITH SILICON CARBIDE DIODES FEATURES: 80m typical on-resistance Low Vf silicon carbide Schottky barrier diode included in parallel with body diode Very fast switching and no reverse recovery Isolated base plate Alum

 0.959. Size:382K  sensitron
spm1003.pdf

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SENSITRON SPM1003 SEMICONDUCTOR TECHNICAL DATA DATASHEET 5279, Rev. - Three-Phase IGBT BRIDGE BRAKE IGBT + INRUSH SCR DESCRIPTION: 1200 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE AND BRAKE IGBT. NEAR HERMETIC PACKAGE. USE OF LATEST 4TH GENERATION IGBT AND DIODE TO MINIMIZE TOTAL LOSSES. 1200 VOLT, 133 AMP INRUSH THYRISTOR (SCR). AlSiC BASE PLATE FOR HIGH

 0.960. Size:23K  shaanxi
wvm15n40.pdf

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Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM15N40(IRF350)Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power s

 0.961. Size:23K  shaanxi
wvm15n50.pdf

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Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM15N50(MTM15N50) Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of powe

 0.962. Size:23K  shaanxi
wvm18n20.pdf

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Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM18N20(IRF240)Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power s

 0.963. Size:22K  shaanxi
wvm15n60.pdf

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Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM15N60Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power source co

 0.964. Size:22K  shaanxi
wvm11n80.pdf

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Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM11N80Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power source co

 0.965. Size:23K  shaanxi
wvm15n20.pdf

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Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM15N20(MTM15N20) Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of powe

 0.966. Size:23K  shaanxi
wvm12n10.pdf

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Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM12N10(MTM12N10) Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of powe

 0.967. Size:23K  shaanxi
wvm13n50.pdf

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Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM13N50(IRF450)Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power s

 0.968. Size:23K  shaanxi
wvm15n45.pdf

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Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM15N45Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: GJB33A-97, QZJ840611 3. Use for high speed switch, circuit of powe

 0.969. Size:534K  silicon standard
ssm1333gu.pdf

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SSM1333GUP-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM1333GU acheives fast switching performanceBVDSS -20Vwith low gate charge without a complex drive circuit. ItRDS(ON) 600mis suitable for low voltage applications such as drivers,high-side line and general load-switching circuits.I -550mAD The SSM1333GU is supplied in an RoHS-compliantPb-f

 0.970. Size:558K  tinfar
tfm1759.pdf

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Tin Far Electronic CO.,LTD Page No: 1/4 TFM1759 Description High breakdown voltage. (BV =-400V)CEO Low saturation voltage, typically V = -0.07V at Ic/I =-10mA/-1mA.CE(sat) B Wide SOA (safe operation area). Complementary to BTC4505M3. Symbol OutlineTFM1759 SOT-89BBaseCCollectorB C E EEmitterAbsolute Maximum Ratings (Ta=25C)Parameter S

 0.971. Size:311K  ubiq
qm12n65f.pdf

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QM12N65F 1 2011-03-03 - 1 -N-Ch 650V Fast Switching MOSFETsGeneral Description Product SummeryThe QM12N65F is the highest performance N-ch MOSFETs with specialized high voltageBVDSS RDSON ID technology, which provide excellent RDSON and 650V 0.8 12Agate charge for most of the SPS, Charger ,Adapter and lighting applications . Applications The QM12N65F me

 0.972. Size:315K  ubiq
qm14n65f.pdf

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QM14N65F 1 2011-07-22 - 1 -N-Ch 650V Fast Switching MOSFETsGeneral Description Product SummeryThe QM14N65F is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 650V 0.65 14Amost of the synchronous buck converterapplications . Applications The QM14N65F meet the RoHS an

 0.973. Size:313K  ubiq
qm12n65p.pdf

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QM12N65P 1 2011-03-03 - 1 -N-Ch 650V Fast Switching MOSFETsGeneral Description Product SummeryThe QM12N65P is the highest performance N-ch MOSFETs with specialized high voltageBVDSS RDSON ID technology, which provide excellent RDSON and 650V 0.8 12Agate charge for most of the SPS, Charger ,Adapter and lighting applications . Applications The QM12N65P me

 0.974. Size:325K  ubiq
qm12n50f.pdf

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QM12N50F 1 2011-07-01 - 1 -N-Ch 500V Fast Switching MOSFETsGeneral Description Product SummeryThe QM12N50F is the highest performance N-ch MOSFETs with specialized high voltageBVDSS RDSON ID technology, which provide excellent RDSON and 500V 0.52 12Agate charge for most of the SPS, Charger ,Adapter and lighting applications . Applications The QM12N50F m

 0.975. Size:322K  ubiq
qm12n70f.pdf

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QM12N70F 1 2011-09-09 - 1 -N-Ch 700V Fast Switching MOSFETsGeneral Description Product SummeryThe QM12N70F is the highest performance N-ch MOSFETs with specialized high voltageBVDSS RDSON ID technology, which provide excellent RDSON and 700V 1 12Agate charge for most of the SPS, Charger ,Adapter and lighting applications . Applications The QM12N70F meet

 0.976. Size:335K  ubiq
qm12n65b.pdf

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QM12N65B 1 2011-03-03 - 1 -N-Ch 650V Fast Switching MOSFETsGeneral Description Product SummeryThe QM12N65B is the highest performance N-ch MOSFETs with specialized high voltageBVDSS RDSON ID technology, which provide excellent RDSON and 650V 0.8 12Agate charge for most of the SPS, Charger ,Adapter and lighting applications . Applications The QM12N65B m

 0.977. Size:322K  ubiq
qm10n60f.pdf

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QM10N60F 1 2011-11-15 - 1 -N-Ch 600V Fast Switching MOSFETsGeneral Description Product SummeryThe QM10N60F is the highest performance N-ch MOSFETs with specialized high voltageBVDSS RDSON ID technology, which provide excellent RDSON and 600V 0.7 12Agate charge for most of the SPS, Charger ,Adapter and lighting applications . Applications The QM10N60F me

 0.978. Size:658K  way-on
wml13n70em wmk13n70em wmm13n70em wmn13n70em wmp13n70em wmo13n70em.pdf

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WML13 WMK13N73N70EM, W 70EM, WMM13N70EM WMN13 WMP13N73N70EM, W 70EM, WMO13N70EM 700V n Power MOSFETV 0.35 Super JunctionDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is ate ch

 0.979. Size:708K  way-on
wml18n70em wmk18n70em wmm18n70em wmn18n70em wmp18n70em wmo18n70em.pdf

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WML18 WMK18N78N70EM, W 70EM, WMM18N70EM WMN18 WMP18N78N70EM, W 70EM, WMO18N70EM 700V Super Ju MOSFETV 0.24 S unction Power M TDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is

 0.980. Size:546K  way-on
wm10n35m2.pdf

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WM10N35M2 N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 3.5A DS DR

 0.981. Size:666K  way-on
wml15n60c4 wmk15n60c4 wmm15n60c4 wmn15n60c4 wmp15n60c4 wmo15n60c4.pdf

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WML1 MM15N60C15N60C4, WMK15N60C4, WM C4 WMN15N60C4, WMP15N60C4, WM C4 MO15N60C 600V n Power MOSFETV 0.26 Super JunctionDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM C4

 0.982. Size:671K  way-on
wmm10n65c4 wml10n65c4 wmo10n65c4 wmn10n65c4 wmp10n65c4 wmk10n65c4.pdf

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WMM10N65C4, WML10N6 WM C4 65C4, MO10N65CWMN10N65C4, WMP10N6 WM C4 65C4, MK10N65C 650V 0.52 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM

 0.983. Size:702K  way-on
wmm120p06ts.pdf

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WMM120P06TS 60V P-Channel Enhancement Mode Power MOSFET DescriptionWMM120P06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. GSFeatures TO-263 V = -60V, I = -120A DS DR

 0.984. Size:923K  way-on
wml12n105c2 wmm12n105c2 wmn12n105c2 wmj12n105c2 wmk12n105c2.pdf

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WML12N105C2, WMM12N105C2 WMN12N105C2, WMJ12N105C2, WMK12N105C2 1050V 0.68 Super Junction Power MOSFET DescriptionWMOSTM C2 is Wayons 2nd generation super junction MOSFET family that is utilizing charge S balance technology for extremely low on-resistance S D D G G S D G and low gate charge performance. WMOSTM C2 is TO-220F TO-262 TO-220 suitable for applic

 0.985. Size:480K  way-on
wm10n20m.pdf

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WM10N20M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 2A DS DR

 0.986. Size:672K  way-on
wml14n65c4 wmk14n65c4 wmm14n65c4 wmn14n65c4 wmp14n65c4 wmo14n65c4.pdf

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WML1 MM14N65C14N65C4, WMK14N65C4, WM C4 WMN14N65C4, WMP14N65C4, WM C4 MO14N65C 650V n Power MOSFETV 0.33 Super JunctionDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM C4

 0.987. Size:672K  way-on
wml13n80m3 wmn13n80m3 wmm13n80m3 wmo13n80m3 wmp13n80m3 wmk13n80m3.pdf

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WML13N80M3, W 80M3, WM M3 WMN13N8 MM13N80MWMO1 80M3, WM M3 13N80M3, WMP13N8 MK13N80M 800V 0.4 S TSuper Junction Power MOSFETDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge performa

 0.988. Size:677K  way-on
wml10n100c2 wmn10n100c2 wmm10n100c2 wmj10n100c2 wmo10n100c2 wmp10n100c2 wmk10n100c2.pdf

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WM 2, WMN10N MM10N100CML10N100C2 N100C2, WM C2 WMJ10N100C2, WM C2, WMP10N MK10N100CMO10N100C N100C2, WM C2 1000V 1.1 S T0 Super Junction Power MOSFETDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G and low ga

 0.989. Size:709K  way-on
wmm115n15hg4.pdf

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WMM115N15HG4 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMM115N15HG4 uses Wayon's 4th generation power trench DMOSFET technology that has been especially tailored to minimize the Gon-state resistance and yet maintain superior switching performance. SThis device is well suited for high efficiency fast switching applications. TO-263Features V = 150V, I =

 0.990. Size:661K  way-on
wml16n65sr wmk16n65sr wmm16n65sr wmn16n65sr wmp16n65sr wmo16n65sr.pdf

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WML16N65SR, W 65SR, WM SR WMK16N6 MM16N65S WMN16N65SR, WMP16N6 MO16N65S65SR, WM SR 650V 0.31 S unction P MOSFET0 Super Ju Power M TDescripptionWMOSTM SR is Wa new generation super ayons w junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G Tand low ga charge perfo

 0.991. Size:664K  way-on
wml16n70sr wmk16n70sr wmm16n70sr wmn16n70sr wmp16n70sr wmo16n70sr.pdf

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WML16N70SR, W 70SR, WM SR WMK16N7 MM16N70S WMN16N70SR, WMP16N7 MO16N70S70SR, WM SR 700V 0.31 S unction P MOSFET0 Super Ju Power M TDescripptionWMOSTM SR is Wa new generation super ayons w junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G Tand low ga charge perfo

 0.992. Size:537K  way-on
wm15p10m2.pdf

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WM15P10M2 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -150V, I = -1A DS DR

 0.993. Size:669K  way-on
wml15n65c4 wmk15n65c4 wmm15n65c4 wmn15n65c4 wmp15n65c4 wmo15n65c4.pdf

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WML1 MM15N65C15N65C4, WMK15N65C4, WM C4 WMN15N65C4, WMP15N65C4, WM C4 MO15N65C 650V n Power MOSFETV 0.26 Super JunctionDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM C4

 0.994. Size:678K  way-on
wml10n105c2 wmn10n105c2 wmm10n105c2 wmj10n105c2 wmo10n105c2 wmp10n105c2 wmk10n105c2.pdf

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WM 2, WMN10N MM10N105CML10N105C2 N105C2, WM C2 WMJ10N105C2, WM C2, WMP10N MK10N105CMO10N105C N105C2, WM C2 1050V 1.1 S T0 Super Junction Power MOSFETDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G and low ga

 0.995. Size:659K  way-on
wml10n65em wmk10n65em wmm10n65em wmn10n65em wmp10n65em wmo10n65em.pdf

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WML10 WMK10N60N65EM, W 65EM, WMM10N65EM WMN10 WMP10N60N65EM, W 65EM, WMO10N65EM 650V 0.52 S TV Super Junction Power MOSFETDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is ate

 0.996. Size:668K  way-on
wmm10n70c4 wml10n70c4 wmo10n70c4 wmn10n70c4 wmp10n70c4 wmk10n70c4.pdf

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WMM10N70C4, WML10N7 WM C4 70C4, MO10N70CWMN10N70C4, WMP10N7 WM C4 70C4, MK10N70C 700V 0.52 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM

 0.997. Size:694K  way-on
wmm190n03ts.pdf

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WMM190N03TS 30V N-Channel Enhancement Mode Power MOSFET DescriptionWMM190N03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain Dsuperior switching performance.GSFeatures TO-263 V = 30V, I = 190A DS DR

 0.998. Size:660K  way-on
wml10n70em wmk10n70em wmm10n70em wmn10n70em wmp10n70em wmo10n70em.pdf

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WML10 WMK10N70N70EM, W 70EM, WMM10N70EM WMN10 WMP10N70N70EM, W 70EM, WMO10N70EM 700V 0.52 S TV Super Junction Power MOSFETDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is ate

 0.999. Size:674K  way-on
wml11n80m3 wmn11n80m3 wmm11n80m3 wmo11n80m3 wmp11n80m3 wmk11n80m3.pdf

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WML11N80M3, W 80M3, WM M3 WMN11N8 MM11N80MWMO1 80M3, WM M3 11N80M3, WMP11N8 MK11N80M 800V 0.68 S TV Super Junction Power MOSFETDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perfo

 0.1000. Size:681K  way-on
wmm180n03ts.pdf

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WMM180N03TS 30V N-Channel Enhancement Mode Power MOSFET DescriptionWMM180N03TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet Gmaintain superior switching performance. STO-263Features V = 30V, I = 180A DS DR

 0.1001. Size:668K  way-on
wml15n65f2 wmk15n65f2 wmm15n65f2 wmn15n65f2 wmp15n65f2 wmo15n65f2.pdf

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WML N65F2, WM F2 L15N65F2, WMK15N MM15N65F WMN , WMP15N MO15N65FN15N65F2, N65F2, WM F2 650V Super Ju MOSFETV 0.29 S unction Power M TDescripptionWMOSTM F2 is Wa 2nd generation super ayons junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f sD S D G GG S D G SJ-MOSFE while of an extr

 0.1002. Size:483K  way-on
wmm161n15t2.pdf

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WMM161N15T2 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMM161N15T2 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures GS V =150V, I = 161A DS DTO-263R

 0.1003. Size:672K  way-on
wml14n70c4 wmk14n70c4 wmm14n70c4 wmn14n70c4 wmp14n70c4 wmo14n70c4.pdf

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WML1 MM14N70C14N70C4, WMK14N70C4, WM C4 WMN14N70C4, WMP14N70C4, WM C4 MO14N70C 700V n Power MOSFETV 0.33 Super JunctionDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM C4

 0.1004. Size:855K  way-on
wm10n33m.pdf

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WM10N33M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 3.3A DS DR

 0.1005. Size:664K  way-on
wml11n70sr wmk11n70sr wmm11n70sr wmn11n70sr wmp11n70sr wmo11n70sr.pdf

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WML11N70SR, W 70SR, WM SR WMK11N7 MM11N70S WMN11N70SR, WMP11N7 MO11N70S70SR, WM SR 700V 0.5 Su nction Puper Jun Power MOSFETDescripptionWMOSTM SR is Wa new generation super ayons w junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G Tand low ga charge performanc W

 0.1006. Size:538K  way-on
wm10p20m2.pdf

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WM10P20M2 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -100V, I = -2A DS DR

 0.1007. Size:655K  way-on
wml15n65c2 wmk15n65c2 wmm15n65c2 wmn15n65c2 wmp15n65c2 wmo15n65c2.pdf

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WML1 MM15N65C15N65C2, WMK15N65C2, WM C2 WMN15N65C2, WMP15N65C2, WM C2 MO15N65C 650V n Power MOSFETV 0.32 Super JunctionDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM C2

 0.1008. Size:665K  way-on
wmm120n04ts.pdf

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WMM120N04TS 40V N-Channel Enhancement Mode Power MOSFET DescriptionWMM120N04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. GSFeatures TO-263 V = 40V, I = 170A DS DR

 0.1009. Size:665K  way-on
wml11n65sr wmk11n65sr wmm11n65sr wmn11n65sr wmp11n65sr wmo11n65sr.pdf

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WML11N65SR, W 65SR, WM SR WMK11N6 MM11N65S WMN11N65SR, WMP11N6 MO11N65S65SR, WM SR 650V 0.5 Su nction Puper Jun Power MOSFETDescripptionWMOSTM SR is Wa new generation super ayons w junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G Tand low ga charge performanc W

 0.1010. Size:557K  way-on
wm10n35m3m.pdf

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WM10N35M3M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 3.5A DS DR

 0.1011. Size:661K  way-on
wmm13n50c4 wml13n50c4 wmo13n50c4 wmn13n50c4 wmp13n50c4 wmk13n50c4.pdf

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WMM13N50C4, WML13N5 WM C4 50C4, MO13N50CWMN13N50C4, WMP13N5 WM C4 50C4, MK13N50C 500V 0.4 S unction Power M TV Super Ju MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMO

 0.1012. Size:683K  way-on
wml18n50c4 wmo18n50c4 wmk18n50c4 wmn18n50c4 wmm18n50c4 wmj18n50c4.pdf

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WML18N50C4, WMO18N5 WM C4 W 50C4, MK18N50CWMN18N50C4, WMM18N50C4, WM C4 MJ18N50C 500V 0.25 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C

 0.1013. Size:653K  way-on
wml12n100c2 wmm12n100c2 wmn12n100c2 wmj12n100c2 wmk12n100c2.pdf

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WML12N100C2, WMM C2 W M12N100CWMN12N WMJ12N10 K12N100CN100C2, W 00C2, WMK C2 1000V 0.68 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C

 0.1014. Size:324K  way-on
wm10n02g.pdf

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Document: W0803094, Rev: B WM10N02G G N-Channel MOSFET Features V = 100V, I = 0.2A DS DR

 0.1015. Size:670K  way-on
wmm10n60c4 wml10n60c4 wmo10n60c4 wmn10n60c4 wmp10n60c4 wmk10n60c4.pdf

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WMM10N60C4, WML10N6 WM C4 60C4, MO10N60CWMN10N60C4, WMP10N6 WM C4 60C4, MK10N60C 600V 0.52 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM

 0.1016. Size:708K  way-on
wml18n65em wmk18n65em wmm18n65em wmn18n65em wmp18n65em wmo18n65em.pdf

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WML18 WMK18N68N65EM, W 65EM, WMM18N65EM WMN18 WMP18N68N65EM, W 65EM, WMO18N65EM 650V Super Ju MOSFETV 0.24 S unction Power M TDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is

 0.1017. Size:661K  way-on
wml15n80m3 wmm15n80m3 wmn15n80m3 wmj15n80m3 wmk15n80m3.pdf

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WML15N8 MM15N80M80M3, WM M3 WMN1 80M3, WM M3 15N80M3, WMJ15N8 MK15N80M 800V 0.3 S TSuper Junction Power MOSFETDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga charge performanc WMOSTM M3

 0.1018. Size:458K  way-on
wm10n02m.pdf

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WM10N02M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 0.2A DS DR

 0.1019. Size:669K  way-on
wml15n70c4 wmk15n70c4 wmm15n70c4 wmn15n70c4 wmp15n70c4 wmo15n70c4.pdf

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WML1 MM15N70C15N70C4, WMK15N70C4, WM C4 WMN15N70C4, WMP15N70C4, WM C4 MO15N70C 700V n Power MOSFETV 0.26 Super JunctionDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM C4

 0.1020. Size:670K  way-on
wml14n60c4 wmk14n60c4 wmm14n60c4 wmn14n60c4 wmp14n60c4 wmo14n60c4.pdf

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WML1 MM14N60C14N60C4, WMK14N60C4, WM C4 WMN14N60C4, WMP14N60C4, WM C4 MO14N60C 600V n Power MOSFETV 0.33 Super JunctionDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM C4

 0.1021. Size:663K  way-on
wml13n65em wmk13n65em wmm13n65em wmn13n65em wmp13n65em wmo13n65em.pdf

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WML13 WMK13N63N65EM, W 65EM, WMM13N65EM WMN13 WMP13N63N65EM, W 65EM, WMO13N65EM 650V n Power MOSFETV 0.35 Super JunctionDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is ate ch

 0.1022. Size:675K  way-on
wml10n80m3 wmn10n80m3 wmm10n80m3 wmo10n80m3 wmp10n80m3 wmk10n80m3.pdf

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WML10N80M3, W 80M3, WM M3 WMN10N8 MM10N80MWMO1 80M3, WM M3 10N80M3, WMP10N8 MK10N80M 800V 0.86 S TV Super Junction Power MOSFETDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perfo

 0.1023. Size:674K  way-on
wml12n80m3 wmn12n80m3 wmm12n80m3 wmo12n80m3 wmp12n80m3 wmk12n80m3.pdf

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WML12N80M3, W 80M3, WM M3 WMN12N8 MM12N80MWMO1 80M3, WM M3 12N80M3, WMP12N8 MK12N80M 800V 0.53 S TV Super Junction Power MOSFETDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perfo

 0.1024. Size:856K  basicsemi
b1m160120hc.pdf

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B1M160120HC SiC MOSFET V 1200 VDS I (Tc=25C) 20 A D R 160 m DS(on)Features: Low On-Resistance with High Blocking Voltage Low Capacitance Avalanche Ruggedness Halogen Free, Rohs Compliant 1 2 3 Benefits High Frequency Operation Enabling higher switching frequency Increased power density Reduction of Heat Sink Requirement

 0.1025. Size:5160K  desay
dm12n65c.pdf

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 0.1026. Size:6079K  desay
dm10n65c.pdf

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 0.1027. Size:1213K  convert
c2m120w080.pdf

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nvertC2M120W080Suzhou Convert Semiconductor Co ., Ltd.1200V N-Channel MOSFETAPPLICATIONSFEATURES Switch Mode Power Supply (SMPS) Low On-Resistance Power Factor Correction (PFC) Low Capacitance Uninterruptible Power Supply (UPS) Avalanche Ruggedness EV Charging station & Motor Drives Halogen Free, RoHS Compliant Solar/ Wind Renewable Energy

 0.1028. Size:1744K  convert
c2m120w280.pdf

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nvertC2M120W280Suzhou Convert Semiconductor Co ., Ltd.1200V N-Channel Silicon Carbide Power MOSFETFEATURES Low On-Resistance Low Capacitance Avalanche Ruggedness Halogen Free, RoHS CompliantBENEFITS Higher System Efficiency Parallel Device Convenience High Temperature Application High Frequency OperationAPPLICATIONS Switch Mode Power Supp

 0.1029. Size:2021K  convert
c2m120w040.pdf

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nvertC2M120W040Suzhou Convert Semiconductor Co ., Ltd.1200V N-Channel Silicon Carbide Power MOSFETFEATURES Low On-Resistance Low Capacitance Avalanche Ruggedness Halogen Free, RoHS CompliantBENEFITS Higher System Efficiency Parallel Device Convenience High Temperature Application High Frequency OperationAPPLICATIONS Switch Mode Power Supp

 0.1030. Size:412K  huashuo
hsm1562.pdf

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HSM1562 Dual N-Ch 60V Fast Switching MOSFETs Description Product Summary VDS 60 V The HSM1562 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 32 m gate charge for most of the synchronous buck converter applications. ID 4.8 A The HSM1562 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function re

 0.1031. Size:909K  huashuo
hsm1641.pdf

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HSM1641 N-Ch and P-Ch Fast Switching MOSFETs Description Product Summary The HSM1641 is the high performance BVDSS RDSON ID complementary N-ch and P-ch MOSFETs with 40V 20m 9A high cell density, which provide excellent RDSON and gate charge for most of the -40V 32m -9A synchronous buck converter applications. The HSM1641 meet the RoHS and Green Product requirement 10

 0.1032. Size:637K  huashuo
hsm1564.pdf

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HSM1564 Dual N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSM1564 is the high cell density trenched N-V 60 V DSch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 13.5 m DS(ON),TYPconverter applications. I 8 A DThe HSM1564 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full funct

 0.1033. Size:9045K  pjsemi
pjm10h03nsc.pdf

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PJM10H03NSCN-Channel Enhancement Mode Power MOSFETSOT-23-3 Features VDS = 100V,ID = 3ARDS(ON)

 0.1034. Size:3058K  pjsemi
pjm138nsa.pdf

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PJM138NSAN- Enhancement Mode Field Effect TransistorSOT-23Features Low gate charge and RDS(ON) Rugged and relaibleApplication1. Gate 2.Source 3.Drain Direct logic-level interface: TTL/CMOSMarking: S3 Drivers: relays, solenoids, lamps, hammers,Schematic diagramDisplay, memories, transistors, etc.3Drain Battery operated systems Solid-state relays

 0.1035. Size:864K  cn sps
sm180r65c.pdf

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SM180R65C30V /36A Single N Power MOSFET N-Channel Super Junction Power MOSFET Description ID 20A SM180R65C is power MOSFET using advanced super junction technology that can realize very low VDSS 650V on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling Rdson (max.) 0.18(VGS=10V, ID=10A) technology. These user friendly dev

 0.1036. Size:862K  cn sps
sm140r50c.pdf

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SM140R50C30V /36A Single N Power MOSFET N-Channel Super Junction Power MOSFETDescription ID 24A SM140R50C is power MOSFET using advanced super junction technology that can realize very low VDSS 500V on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling Rdson (max.) 0.14(VGS=10V, ID=12A) technology. These user friendly devi

 0.1037. Size:502K  cn vbsemi
vbm1208n.pdf

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VBM1208Nwww.VBsemi.comN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSVDS (V) RDS(on) () ID (A) Qg (Typ) 175 C Junction TemperatureRoHS0.060 at VGS = 10 V COMPLIANT 40 New Low Thermal Resistance Package200 950.070 at VGS = 6 V38.7 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-220AB IndustrialDG

 0.1038. Size:595K  cn vbsemi
vbm1203m.pdf

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VBM1203Mwww.VBsemi.comN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY DT-Trench Power MOSFETVDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature0.270 at VGS =10V10200 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchTO-220ABDGSN-Channel MOSFETG D STop ViewABSOLUTE MAXIMUM RA

 0.1039. Size:984K  cn vbsemi
vbzm100n04.pdf

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VBZM100N04www.VBsemi.comN-Channel 40-V (D-S) MOSFETPRODUCT SUMMARYFEATURESVDS TrenchFET Power MOSFET40 VRDS(on) VGS = 10 V 2 100 % Rg and UIS TestedmRoHSID 180ACOMPLIANT APPLICATIONSConfiguration Single Synchronous Rectification Power SuppliesTO-220ABDGSG D SN-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS TA = 25 C, unless ot

 0.1040. Size:781K  cn vbsemi
vbzm100n03.pdf

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VBZM100N03www.VBsemi.comN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 30DefinitionRDS(on) () at VGS = 10 V 0.001 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.002 Package with Low Thermal ResistanceID (A) 260 100 % Rg and UIS TestedConfiguration Single Compliant to RoHS Directive 20

 0.1041. Size:1190K  cn vbsemi
vbm1603.pdf

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VBM1603www.VBsemi.comN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.0035 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.0090 Package with Low Thermal ResistanceID (A) 210 100 % Rg and UIS TestedConfiguration Single Compliant to RoHS Directive 2002/95

 0.1042. Size:810K  cn vbsemi
vbm1206.pdf

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VBM1206www.VBsemi.comN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) (W) ID (A)a 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.004@ VGS = 4.5 V10020200.005@ VGS = 2.5 V 95APPLICATIONS OR-ingTO-220AB Server DC/DCDGG D STop ViewSN-Channel MOSFETABSOLUTE MAXIMUM RAT

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