M1 - Даташиты. Аналоги. Основные параметры

MITSUBISHI HVIGBT MODULES CM1800HC-34H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1800HC-34H IC ................................................................ 1800A VCES ....................................................... 1700V Insulated Type 1-element in a Pack AISiC Baseplate Soft Reverse Recover

CM1000DXL-24S Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBT www.pwrx.com NX-Series Module 1000 Amperes/1200 Volts A B G C D J E K L F AM AM K AH AM AT AU AU AV AU AJ AL 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 L AE Y M X(4 PLACES) 40 AM AK 39 1 R Q 38 37 36 DETAIL "A" Z S 35 T 34 2

CM150DX-34SA Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBT www.pwrx.com NX-Series Module 150 Amperes/1700 Volts A D H E J F K G AK AZ AL L Y AG 9 8 AQ AJ AR AS U AB (4 PLACES) AC T 10 7 DETAIL "C" M AD P AM N B AP AF (4 PLACES) 6 11 S DETAIL "A" R 1 2 3 4 5 AE DETAIL "A" AM Z AA AY V Q Description Y AN Y

CM1200DC-34N Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBTMOD www.pwrx.com HVIGBT Module 1200 Amperes/1700 Volts A DD U K (4 TYP) 42 Q F B C E Y 3 1 Description E1 Z E2 Powerex IGBTMOD Modules AA V G1 G2 M (3 TYP) are designed for use in switching W applications. Each module consists C1 C2 of two IGBT Transistors in

CM150DX-24A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBTMOD NX-Series Module 150 Amperes/1200 Volts A D E J F J Y (4 PLACES) G AD AE H AF 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 Q 47 24 S T U AA B Z AB R 48 23 S T U Q DETAIL "B" AG 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Desc

MITSUBISHI HVIGBT MODULES CM1600HC-34H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1600HC-34H IC ................................................................ 1600A VCES ....................................................... 1700V Insulated Type 1-element in a Pack AISiC Baseplate Soft Reverse Recover

MITSUBISHI HVIGBT MODULES CM1200HA-66H HIGH POWER SWITCHING USE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200HA-66H IC................................................................ 1200A VCES ....................................................... 3300V Insulated Type 1-element in a pack APPLICATION Inverters, Converters, DC choppers, Ind

CM100DU-12F Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMOD 100 Amperes/600 Volts A N D P - NUTS (3 TYP) TC MEASURED POINT Y E C2E1 E2 C1 W Q (2 F PLACES) X G B F Description Powerex IGBTMOD Modules M K K J are designed for use in switching R applications. Each module con- H (4 PLACES) sis

Green Package TO-92 PTM15003T NPN Silicon Power Transistor 1.5 Amperes / 1.1 Watts Switch Mode series NPN silicon Power Transistor 1 2 - High voltage, high speed power switching 3 - Suitable for switching regulator, inverters motor controls 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25 unless otherwise noted CHARACTERISTICS SYMBOL RATING UNIT Coll

MITSUBISHI HVIGBT MODULES CM1200DB-34N HIGH POWER SWITCHING USE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200DB-34N IC ................................................................ 1200A VCES ....................................................... 1700V Insulated Type 2-element in a Pack Cu Baseplate Trench Gate IGBT CSTB

MITSUBISHI IGBT MODULES CM10MD-24H MEDIUM POWER SWITCHING USE INSULATED TYPE CM10MD-24H IC ..................................................................... 10A VCES ......................................................... 1200V Insulated Type CIB Module 3 Inverter+3 Converter+Brake UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC & DC mot

CM150EXS-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current IC ............. ....................... 1 5 0 A Collector-emitter voltage V ...................... 1 2 0 0 V CES Maximum junction temperature T .............. 1 7 5 C j max Flat base Type Copper base plate (non-plating) Tin plating pin terminals RoHS Directive co

CM100DU-24F Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMOD 100 Amperes/1200 Volts A N D P - NUTS (3 TYP) TC MEASURED POINT Y E C2E1 E2 C1 W Q (2 F PLACES) X G B F Description Powerex IGBTMOD Modules M K K J are designed for use in switching R applications. Each module con- H (4 PLACES) sis

MITSUBISHI HVIGBT MODULES CM1200HB-66H HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200HB-66H IC................................................................ 1200A VCES ....................................................... 3300V Insulated Type 1-element in a pack APPLICATION Inverters, Converters, DC c

RM150N100HD N-Channel Super Trench Power MOSFET Description The RM150N100HD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rect

CM150RX-12A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Six IGBTMOD + Brake NX-Series Module 150 Amperes/600 Volts AN AH AL AL AL AL AL AL AM AM AM AP AK AK AM AM AJ AJ A D E AT R F AQ AD H AR G AE AS 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 J DETAIL "A" AUAL AA(4 PLACES) 12 35 R Q 11 P 10 N M L K B

CM150DU-24F Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMOD 150 Amperes/1200 Volts A T - (4 TYP.) D TC MEASURED POINT U (4 PLACES) G2 H E2 C J B E L CM C2E1 E2 C1 E1 H G1 Description G Powerex IGBTMOD Modules Q Q P N S - NUTS are designed for use in switching (3 TYP) applications. Each m

MITSUBISHI HVIGBT MODULES CM1200HC-50H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200HC-50H IC ................................................................ 1200A VCES ....................................................... 2500V Insulated Type 1-element in a Pack AISiC Baseplate APPLICATION Traction

CM100RL-12NF Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Six IGBTMOD + Brake www.pwrx.com NF-Series Module 100 Amperes/600 Volts E A F D M G H J J K N 8 1 1 1 1 C B CN UP VP WP P N AA AB K B U V W Q U P L T Description K K K K Powerex IGBTMOD Modules S R R R are designed for use in switching applications. Each module K

MITSUBISHI IGBT MODULES CM1400DU-24NF HIGH POWER SWITCHING USE CM1400DU-24NF IC ................................................................ 1400A VCES ......................................................... 1200V Insulated Type 2-elements in a pack APPLICATION UPS & General purpose inverters, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm A,B HO

MITSUBISHI HVIGBT MODULES CM1200HC-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200HC-66H IC ................................................................ 1200A VCES ....................................................... 3300V Insulated Type 1-element in a Pack AISiC Baseplate APPLICATION Traction

GWM13S65Y POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to withstand SJ MOS high energy in the avalanche mode and switch efficiently. This Higher Current Rating new high energy device also offers a drain-to-source diode Lower Rds(on) with fast recovery time. Designed for high voltage, high speed Lower Capacitances switchin

MITSUBISHI IGBT MODULES CM150E3U-24F HIGH POWER SWITCHING USE CM150E3U-24F IC ...................................................................150A VCES ......................................................... 1200V Insulated Type 1-element in a pack APPLICATION Brake OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 108 93 0.25 4 14 14 14 Tc measured point CM C2

MITSUBISHI HVIGBT MODULES CM1200E4C-34N HIGH POWER SWITCHING USE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200E4C-34N IC ................................................................ 1200A VCES ....................................................... 1700V Insulated Type 1-element in a Pack (for brake) AISiC Baseplate Trench

CM150DY-24NF Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD NF-Series Module 150 Amperes/1200 Volts TC MEASURED POINT TC MEASURED POINT (BASEPLATE) (BASEPLATE) A A F F F F E E E E G2 G2 E2 G E2 G B B J J N H N H C2E1 E2 C1 E1 C2E1 E2 C1 E1 G1 G G1 G Description Powerex IGBTMOD Modules K K K K K K M NUTS

CM150DX-24S Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBT www.pwrx.com NX-Series Module 150 Amperes/1200 Volts AR AP AS A D AN AQ E J F J DETAIL "A" G S Y H AE (4 PLACES) L AF 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 Q K 47 24 S T U AA B Z AB AZ R 48 23 S T U Q DETAIL "B" AG 1 2 3 4 5 6 7 8

CM150RL-12NF Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Six IGBTMOD + Brake www.pwrx.com NF-Series Module 150 Amperes/600 Volts E A F D M G H J J K N 8 1 1 1 1 C B CN UP VP WP P N AA AB K B U V W Q U P L Description T K K K K Powerex IGBTMOD Modules S R R R are designed for use in switching applications. Each module

MITSUBISHI IGBT MODULES CM150DU-24NFH HIGH POWER SWITCHING USE CM150DU-24NFH IC ...................................................................150A VCES ......................................................... 1200V Insulated Type 2-elements in a pack APPLICATION High frequency switching use (30kHz to 60kHz). Gradient amplifier, Induction heating, power supply, etc. OUTL

CM150TL-24NF Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Six IGBTMOD www.pwrx.com NF-Series Module 150 Amperes/1200 Volts A D E F H H E G G G M K N L W V U E V (6 PLACES) AB CN CN B G 1 8 B X 8 C N G AC X J 1 1 1 P G Description W P WP VP UP Powerex IGBTMOD Modules E are designed for use in switching R S S K ap

CM100TU-24F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Six IGBTMOD 100 Amperes/1200 Volts J T (4 TYP.) K S - NUTS (5 TYP) K R CM N P P GUP EUP GVP EVP GWP EWP L N L N L B E Q M GUN EUN GVN EVN GWN EWN TC TC MEASURING MEASURING U V W POINT POINT Description J J Powerex IGBTMOD Modules LLL are designe

CM1800DY-34S Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual Half-Bridge www.pwrx.com IGBT HVIGBT Series Module 1800 Amperes/1700 Volts A AN AS AP AQ H (12 PLACES) X AR G Y E2 G2 C2 F J (18 PLACES) F P L S E2 E2 L C2E1 D V C B C2E1 C1 C1 AA L L K Q AV K K T E FW AB F G1 E1 C1 P U R AW F AT AU AD N M (8 PLACES) AC

MITSUBISHI HVIGBT MODULES CM1200HG-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200HG-66H IC ............................................................... 1200 A VCES ...................................................... 3300 V High Insulated Type 1-element in a Pack AISiC Baseplate A

CM100TU-12F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Six IGBTMOD 100 Amperes/600 Volts J T (4 TYP.) S - NUTS (5 TYP) K K R CM N P P GUP EUP GVP EVP GWP EWP L N L N L B E Q M GUN EUN GVN EVN GWN EWN TC TC MEASURING MEASURING POINT U V W POINT Description J J Powerex IGBTMOD Modules L N L N L are desig

CM150TU-12F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Six IGBTMOD 150 Amperes/600 Volts J T (4 TYP.) K S - NUTS (5 TYP) K R CM N P P GUP EUP GVP EVP GWP EWP L N L N L B E Q M GUN EUN GVN EVN GWN EWN TC TC MEASURING MEASURING U V W POINT POINT Description J J Powerex IGBTMOD Modules L L L are design

CM100DU-24NFH Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBT www.pwrx.com NFH-Series Module 100 Amperes/1200 Volts TC MEASUREMENT POINT A N D M K K F E C2E1 E2 C1 S B H G F R J P - NUTS (3 TYP) U Q - (2 TYP) Description Powerex IGBT Modules are designed for use in high frequency applications; 30 kHz W W W W for hard switchi

CM150TX-24S Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Six IGBT www.pwrx.com NX-Series Module 150 Amperes/1200 Volts AE A AD AF E F K AC G AA K K K K AB DETAIL "A" Q K K K C J M M M Z 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 AJ AK AL 54 30 N K K 55 29 (4 PLACES) AH K K S 56 28 57 27 R B AM L L

CM1800HC-34N Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Single IGBTMOD HVIGBT Module 1800 Amperes/1700 Volts A DD U K (4 TYP) 42 F B V C E 3 1 Description Powerex IGBTMOD Modules C are designed for use in switching E G M (3 TYP) applications. Each module consists W of one IGBT Transistor in a reverse-connected super-fast L

MITSUBISHI HVIGBT MODULES CM1200HC-34H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200HC-34H IC ................................................................ 1200A VCES ....................................................... 1700V Insulated Type 1-element in a Pack AISiC Baseplate Soft Reverse Recover

RFM12P08

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPM1A800A120C5/D MPM1A800A120C5 Motorola Preferred Device Preliminary Data Sheet Hybrid Power Module 800 AMP, 1200 VOLT HYBRID POWER MODULE This module is designed for use in switching applications. Each module utilizes advanced insulated gate bipolar transistors (IGBT) in a single configuration with a reverse connected

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPM1A120A120C5/D MPM1A120A120C5 Motorola Preferred Device Preliminary Data Sheet Hybrid Power Module 1200 AMP, 1200 VOLT HYBRID POWER MODULE This module is designed for use in switching applications. Each module utilizes advanced insulated gate bipolar transistors (IGBT) in a single configuration with a reverse connecte

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PHM18NQ15T TrenchMOS standard level FET Rev. 02 20 August 2004 Product data M3D879 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features SOT96 (SO-8) footprint compatible Low thermal resistance Surface mounted package Low profile. 1.3 Applications DC-to-DC converter primary sid

PHM15NQ20T TrenchMOS standard level FET Rev. 03 11 September 2003 Product data M3D879 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features SOT96 (SO-8) footprint compatible Low thermal resistance Surface mounted package Low profile. 1.3 Applications DC-to-DC primary side Porta

PHM12NQ20T TrenchMOS standard level FET Rev. 01 30 January 2003 Preliminary data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability PHM12NQ20T in SOT685-1 (QLPAK). 1.2 Features SOT96 (SO-8) footprint compatible Low thermal resistance Surface mount package Low profile.

DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D087 PZTM1101 NPN transistor/Schottky-diode module 1996 May 09 Product specification Philips Semiconductors Product specification NPN transistor/Schottky-diode module PZTM1101 FEATURES DESCRIPTION Low output capacitance Combination of an NPN transistor and a Schottky barrier diode in a plastic SOT223 package. PNP complement PZT

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PZTM1102 PNP transistor/Schottky-diode module 1996 May 09 Product specification File under Discrete Semiconductors, SC01 Philips Semiconductors Product specification PNP transistor/Schottky-diode module PZTM1102 FEATURES DESCRIPTION Low output capacitance Combination of a PNP transistor and a Schottky barrier diode i

AM1011-300 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTING .LOW RF THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .400 x .600 2LFL (M207) .P 325 W MIN. WITH 7.7 dB GAIN OUT = hermetically sealed .1030/1090 MHZ OPERATION BRANDING ORDER CODE AM1011-300 AM1011-300 PIN CONNECTION

AM1011-075 RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .10 1 VSWR CAPABILITY .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .400 x .400 2LFL (S036) hermetically sealed .P = 75 W MIN. WITH 9.2 dB GAIN OUT ORDER CODE BRANDING AM1011-075 1011-75 DESCRIPTION PIN CONNE

STGW25M120DF3 STGWA25M120DF3 Trench gate field-stop IGBT, M series 1200 V, 25 A low loss Datasheet - production data Features 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 25 A Tight parameters distribution Safer paralleling Low thermal resistance 3 Soft and fast recovery antiparallel diode 2 1 Applications TO-247 Industria

AM1011-070 RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .P = 70 W MIN. WITH 6.7 dB GAIN OUT .400 x .400 2NLFL (S042) hermetically sealed ORDER CODE BRANDING AM1011-70 1011-70 DESCRIPTION PIN CONNECTION The AM1011-070

STGW40M120DF3 STGWA40M120DF3 Trench gate field-stop IGBT, M series 1200 V, 40 A low loss Datasheet - production data Features 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 40 A Tight parameters distribution Safer paralleling Low thermal resistance 3 Soft and fast recovery antiparallel diode 2 1 Applications TO-247 Industria

STGW25M120DF3 STGWA25M120DF3 Trench gate field-stop IGBT, M series 1200 V, 25 A low loss Datasheet - production data Features 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 25 A Tight parameters distribution Safer paralleling Low thermal resistance 3 Soft and fast recovery antiparallel diode 2 1 Applications TO-247 Industria

STGW15M120DF3 STGWA15M120DF3 Trench gate field-stop IGBT, M series 1200 V, 15 A low loss Datasheet - production data Features 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 15 A Tight parameters distribution Safer paralleling Low thermal resistance 3 Soft and fast recovery antiparallel diode 2 1 Applications TO-247 Industria

STGW40M120DF3 STGWA40M120DF3 Trench gate field-stop IGBT, M series 1200 V, 40 A low loss Datasheet - production data Features 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 40 A Tight parameters distribution Safer paralleling Low thermal resistance 3 Soft and fast recovery antiparallel diode 2 1 Applications TO-247 Industria

AM1214-300 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .5 1 VSWR CAPABILITY .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .400 x .500 2LFL (S038) .P = 270 W MIN. WITH 6.3 dB GAIN OUT hermetically sealed ORDER CODE BRANDING AM1214-300 1214-300 PIN CONNECTION DESCRIP

AM1517-012 RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED . 1 VSWR CAPABILITY .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .METAL/CERAMIC HERMETIC PACKAGE .P 12 W MIN. WITH 8.5 dB GAIN .400 x .400 2NLFL (S042) OUT = hermeticallysealed ORDER CODE BRANDING AM1517-012 1517-12 PIN CONNECTION DESCRIPTION

STGW15M120DF3 STGWA15M120DF3 Trench gate field-stop IGBT, M series 1200 V, 15 A low loss Datasheet - production data Features 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 15 A Tight parameters distribution Safer paralleling Low thermal resistance 3 Soft and fast recovery antiparallel diode 2 1 Applications TO-247 Industria

AM1011-500 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .P 500 W MIN. WITH 8.5 dB MIN. OUT = GAIN .10 1 LOAD VSWR CAPABILITY @ 10 S., 1% DUTY .SIXPAC HERMETIC METAL/CERAMIC PACKAGE .EMITTER SITE BALLASTED OVERLAY .400 x .600 2LFL (M198) GEOMETRY hermetically sealed .REFRACTORY/GOLD METALLIZATION .LOW THERMAL RESISTANCE ORDER CODE BRANDING AM1011-500 .INTERNAL INPUT/OUT

AM1214-325 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .5 1 VSWR CAPABILITY .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .400 x .500 2LFL (S038) .POUT 325 W MIN. WITH 6.4 dB GAIN hermetically sealed = ORDER CODE BRANDING AM1214-325 1214-325 PIN CONNECTION DESCRIPTI

AM1214-200 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS PRELIMINARY DATA .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .P 200 W MIN. WITH 7.0 dB GAIN OUT = .400 x .500 2LFL (M205) hermetically sealed ORDER CODE BRANDING AM1214-200 1214-200 PIN CONNECTION DESCRIPTION

AM1011-400 RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .15 1 VSWR CAPABILITY .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .400 x .500 2LFL (S038) .POUT 400 W MIN. WITH 8.0 dB GAIN = hermetically sealed ORDER CODE BRANDING AM1011-400 1011-400 PIN CONNECTION DESC

AM1214-100 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS PRELIMINARY DATA .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .P 100 W MIN. WITH 6.0 dB GAIN OUT = .400 x .500 2LFL (S038) hermetically sealed ORDER CODE BRANDING AM1214-100 1214-100 PIN CONNECTION DESCRIPTION

AM1517-025 RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED . 1 VSWR CAPABILITY .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .400 x .400 2NLFL (S042) hermetically sealed .P 25 W MIN. WITH 8.5 dB GAIN = OUT ORDER CODE BRANDING AM1517-025 1517-25 PIN CON

STGW40M120DF3 STGWA40M120DF3 Trench gate field-stop IGBT, M series 1200 V, 40 A low loss Datasheet - production data Features 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 40 A Tight parameters distribution Safer paralleling Low thermal resistance 3 Soft and fast recovery antiparallel diode 2 1 Applications TO-247 Industria

STGW15M120DF3 STGWA15M120DF3 Trench gate field-stop IGBT, M series 1200 V, 15 A low loss Datasheet - production data Features 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 15 A Tight parameters distribution Safer paralleling Low thermal resistance 3 Soft and fast recovery antiparallel diode 2 1 Applications TO-247 Industria

AM1214-175 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .3 1 VSWR CAPABILITY .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .400 x .500 2LFL (S038) .POUT = 160 W MIN. WITH 7.3 dB GAIN hermetically sealed ORDER CODE BRANDING AM1214-175 1214-175 PIN CONNECTION DESCRIPTI

TK40P03M1 MOSFETs Silicon N-Channel MOS (U-MOS -H) TK40P03M1 TK40P03M1 TK40P03M1 TK40P03M1 1. Applications 1. Applications 1. Applications 1. Applications DC-DC Converters Desktop PCs 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Low gate charge QSW = 5.7 nC (typ.) (3) Low drain-source on-resistance RDS(ON) = 8.3 m (typ.) (VGS = 10

TK50P03M1 MOSFETs Silicon N-Channel MOS (U-MOS -H) TK50P03M1 TK50P03M1 TK50P03M1 TK50P03M1 1. Applications 1. Applications 1. Applications 1. Applications DC-DC Converters Desktop PCs 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Low gate charge QSW = 8.2 nC (typ.) (3) Low drain-source on-resistance RDS(ON) = 5.8 m (typ.) (VGS = 10

TK40P04M1 MOSFETs Silicon N-Channel MOS (U-MOS -H) TK40P04M1 TK40P04M1 TK40P04M1 TK40P04M1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Low gate charge QSW = 7.4 nC (typ.) (3) Low drain-source on-resistance RDS(ON) = 8.5 m (t

TK20P04M1 MOSFETs Silicon N-Channel MOS (U-MOS -H) TK20P04M1 TK20P04M1 TK20P04M1 TK20P04M1 1. Applications 1. Applications 1. Applications 1. Applications DC-DC Converters Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Low gate charge QSW = 3.7 nC (typ.) (3) Low drain-source on-resistance RDS(ON) = 19 m

SM12G45,SM12J45,SM12G45A,SM12J45A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM12G45,SM12J45,SM12G45A,SM12J45A AC POWER CONTROL APPLICATIONS Unit mm Repetitive Peak Off-State Voltage VDRM = 400, 600V R.M.S On-State Current I = 12A T (RMS) High Commutating (dv / dt) MAXIMUM RATINGS CHARACTERISTIC SYMBOL RATING UNIT SM12G45 400 SM12G45A Repeti

GT40M101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT40M101 Unit mm HIGH POWER SWITCHING APPLICATIONS High input impedance High speed tf = 0.4 s (Max.) Low saturation voltage VCE(sat) = 3.4V (Max.) Enhancement mode type MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 900 V Gate-Emitter Voltage V

TK45P03M1 MOSFETs Silicon N-Channel MOS (U-MOS -H) TK45P03M1 TK45P03M1 TK45P03M1 TK45P03M1 1. Applications 1. Applications 1. Applications 1. Applications DC-DC Converters Desktop Computers 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Low gate charge QSW = 8.0 nC (typ.) (3) Low drain-source on-resistance RDS(ON) = 6.5 m (typ.) (VG

MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TPM1919-60 TECHNICAL DATA FEATURES HIGH POWER PARTIALLY MATCHED TYPE P1dB=48.0dBm at 1.96GHz HIGH GAIN HERMETICALLY SEALED PACKAGE G1dB=13.0dB at 1.96GHz RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C ) CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX. Output Power at 1dB Gain P1dB dBm 47.0 48.0 Compression

RFM12U7X TOSHIBA Field Effect Transistor Silicon N Channel MOS Type RFM12U7X VHF- and UHF-band Amplifier Applications Unit mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use. Do not use these TOSHIBA products listed in t

TK50P04M1 MOSFETs Silicon N-Channel MOS (U-MOS -H) TK50P04M1 TK50P04M1 TK50P04M1 TK50P04M1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Low gate charge QSW = 9.4 nC (typ.) (3) Low drain-source on-resistance RDS(ON) = 6.7 m (t

TK60P03M1 MOSFETs Silicon N-Channel MOS (U-MOS -H) TK60P03M1 TK60P03M1 TK60P03M1 TK60P03M1 1. Applications 1. Applications 1. Applications 1. Applications DC-DC Converters Desktop Computers 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Low gate charge QSW = 13 nC (typ.) (3) Low drain-source on-resistance RDS(ON) = 4.6 m (typ.) (VGS

Preliminary Datasheet RJH60M1DPP-M0 R07DS0528EJ0100 600 V - 8 A - IGBT Rev.1.00 Application Inverter Sep 02, 2011 Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techn

Preliminary Datasheet RJH60M1DPE R07DS0529EJ0100 600 V - 8 A - IGBT Rev.1.00 Application Inverter Sep 02, 2011 Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer technolo

Preliminary Datasheet RJK03M1DPA 30V, 50A, 2.3m max. R07DS0765EJ0200 N Channel Power MOS FET Rev.2.00 High Speed Power Switching Feb 08, 2013 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code PWSN0008DE-A (Package nam

Preliminary Datasheet RJH60M1DPE R07DS0529EJ0300 600V - 8A - IGBT Rev.3.00 Application Inverter May 25, 2012 Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer technolo

Preliminary Datasheet RJH60M1DPP-M0 R07DS0528EJ0300 600V - 8A - IGBT Rev.3.00 Application Inverter May 25, 2012 Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (75 ns typ.) in one package Trench gate and thin wafer techno

IRLM110A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.44 Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.5 A Improved Gate Charge Extended Safe Operating Area SOT-223 Lower Leakage Current 10 A(Max.) @ VDS = 100V 2 Lower RDS(ON) 0.336 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum R

SSM1N45B 450V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.5A, 450V, RDS(on) = 4.25 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.5 nC) planar, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored to 100% avalanche te

IRFM110A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.5 A Improved Gate Charge Extended Safe Operating Area SOT-223 Lower Leakage Current 10 A (Max.) @ VDS = 100V 2 Lower RDS(ON) 0.289 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbo

IRFM120A Advanced Power MOSFET IEEE802.3af Compatible FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.3 A Improved Gate Charge Extended Safe Operating Area SOT-223 Lower Leakage Current 10 A (Max.) @ VDS = 100V 2 Lower RDS(ON) 0.155 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum

IRFM120A Advanced Power MOSFET IEEE802.3af Compatible FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.3 A Improved Gate Charge Extended Safe Operating Area SOT-223 Lower Leakage Current 10 A (Max.) @ VDS = 100V 2 Lower RDS(ON) 0.155 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum

FSAM15SH60A SPMTM (Smart Power Module) General Description Features FSAM15SH60A is an advanced smart power module UL Certified No. E209204 (SPM) that Fairchild has newly developed and designed to 600V-15A 3-phase IGBT inverter bridge including control provide very compact and high performance ac motor ICs for gate driving and protection drives mainly targeting high speed low-pow

FSAM10SH60A SPMTM (Smart Power Module) General Description Features FSAM10SH60A is an advanced smart power module UL Certified No. E209204 (SPM) that Fairchild has newly developed and designed to 600V-10A 3-phase IGBT inverter bridge including control provide very compact and high performance ac motor ICs for gate driving and protection drives mainly targeting high speed low-pow

IRLM120A Advanced Power MOSFET FEATURES BVDSS = 100 V n Avalanche Rugged Technology RDS(on) = 0.22 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = 2.3 A n Improved Gate Charge n Extended Safe Operating Area SOT-223 n Lower Leakage Current 10 A(Max.) @ VDS = 100V 2 n Lower RDS(ON) 0.176 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings

DATA SHEET NPN SILICON RF TWIN TRANSISTOR PA859TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES Low voltage operation 2 different built-in transistors (2SC5737, 2SC5676) Q1 Low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz Q2 Low phase distortion transistor suited for OSC applications fT = 5.

NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high- gain amplification PO (1 dB) = 21 dBm TYP. @ VCE = 3.6 V, IC (set) = 10 mA (RF OFF), f = 2 GHz

NEC's NPN SILICON TRANSISTOR NE685M13 OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE Small transistor outline 1.0 X 0.5 X 0.5 mm 0.7 0.05 (Bottom View) Low profile / 0.50 mm package height 0.5+0.1 0.05 0.3 Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT fT = 12 GHz 2 LOW NOISE FIGU

DATA SHEET NPN SILICON RF TWIN TRANSISTOR PA891TD NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES Built-in low phase distortion transistor suited for OSC operation fT = 5.0 GHz TYP., S21e 2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz Built-in 2 transistors (2 2SC5600) 6-pin lead-less minimold package BUILT-IN TRA

NPN SILICON GERMANIUM C RF TRANSISTOR NESG4030M14 NPN SiGe C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) FEATURES The device is an ideal choice for low noise, high-gain amplification NF = 1.1 dB TYP., Ga = 11.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz Maximum stable power gain MSG = 15 dB TYP. @ VCE = 2 V, IC = 20 mA,

DATA SHEET NPN SILICON RF TWIN TRANSISTOR PA855TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES Low voltage operation 2 different built-in transistors (2SC5737, 2SC5745) Q1 Low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz Q2 Low phase distortion transistor suited for OSC operation fT = 5.5 G

NEC's NPN SILICON TRANSISTOR NE851M13 OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE Small transistor outline 0.7 0.05 1.0 X 0.5 X 0.5 mm (Bottom View) Low profile / 0.50 mm package height 0.5+0.1 0.05 0.3 Flat lead style for better RF performance IDEAL FOR 3 GHz OSCILLATORS LOW PHASE NOISE 2 3 L

NEC's NPN SILICON TRANSISTOR NE681M13 OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE Small transistor outline +0.1 +0.1 0.5 0.05 0.15 0.3 1.0 X 0.5 X 0.5 mm 0.05 Low profile / 0.50 mm package height 1 2 Flat lead style for better RF performance 0.35 HIGH GAIN BANDWIDTH PRODUCT +0.1 +0.1 1.0 0.7 0.0

PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M13 OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE Small transistor outline +0.1 +0.1 0.5 0.05 0.15 0.05 0.3 1.0 X 0.5 X 0.5 mm Low profile / 0.50 mm package height 1 2 Flat lead style for better RF performance 0.35 HIGH GAIN BANDWIDTH PRODUCT +0.1 +0.1

DATA SHEET NPN SILICON RF TWIN TRANSISTOR PA895TS NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES Built-in low voltage operation, low phase distortion transistor suited for OSC applications fT = 4.5 GHz TYP., S21e 2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz Built-in 2 transistors (2 2SC5800) 6-pin super lead-les

DATA SHEET NPN SILICON RF TWIN TRANSISTOR PA841TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES Low voltage operation 2 different built-in transistors (2SC5435, 2SC5600) Q1 Built-in high-gain transistor fT = 12.0 GHz TYP., S21e 2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2 Built-in low phase distortion

NPN SILICON GERMANIUM RF TRANSISTOR NESG2021M16 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f

NPN SILICON HIGH NE662M16 FREQUENCY TRANSISTOR FEATURES HIGH GAIN BANDWIDTH fT = 25 GHz LOW NOISE FIGURE NF = 1.1 dB at 2 GHz HIGH MAXIMUM STABLE GAIN 20 dB at f = 2 GHz NEW LOW PROFILE M16 PACKAGE Flat Lead Style with a height of just 0.50mm DESCRIPTION NEC's NE662M16 is fabricated using NEC's UHS0 25 GHz fT M16 wafer process. With a typical transition frequ

NPN SILICON GERMANIUM RF TRANSISTOR NESG3032M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PACKAGE) FEATURES The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz Maximum stable power gain MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz

PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE681M13 OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE Small transistor outline +0.1 +0.1 0.5 0.05 0.15 0.05 0.3 1.0 X 0.5 X 0.5 mm Low profile / 0.50 mm package height 1 2 Flat lead style for better RF performance 0.35 HIGH GAIN BANDWIDTH PRODUCT +0.1 +0.1

DATA SHEET NPN SILICON RF TWIN TRANSISTOR PA863TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES Low voltage operation 2 different built-in transistors (2SC5436, 2SC5800) Q1 Built-in high gain transistor fT = 12.0 GHz TYP., S21e 2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz Q2 Built-in low phase distortion

NPN SILICON GERMANIUM RF TRANSISTOR NESG2031M16 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.2 GHz

NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) FEATURES The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz NF = 0.95 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz

DATA SHEET NPN SILICON RF TWIN TRANSISTOR PA860TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES Low voltage operation 2 different built-in transistors (2SC5435, 2SC5786) Q1 High-gain transistor fT = 12.0 GHz TYP., S21e 2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2 Low phase distortion transistor suitab

NE687M13 NEC's NPN SILICON TRANSISTOR OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE Small transistor outline 0.7 0.05 1.0 X 0.5 X 0.5 mm (Bottom View) Low profile / 0.50 mm package height 0.5+0.1 0.05 0.3 Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT fT = 14 GHz 2 3 LOW NOISE F

DATA SHEET NPN SILICON RF TWIN TRANSISTOR PA861TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES Low voltage operation 2 different built-in transistors (2SC5436, 2SC5786) Q1 High-gain transistor fT = 12.0 GHz TYP., S21e 2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz Q2 Low phase distortion transistor suitab

DATA SHEET NPN SILICON RF TWIN TRANSISTOR PA895TD NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES Built-in low phase distortion transistor suited for OSC applications fT = 4.5 GHz TYP., S21e 2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz Built-in 2 transistors (2 2SC5800) 6-pin lead-less minimol

DATA SHEET NPN SILICON RF TWIN TRANSISTOR PA854TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES Low voltage operation 2 different built-in transistors (2SC5435, 2SC5745) Q1 High gain transistor fT = 12.0 GHz TYP., S21e 2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2 Low phase distortion transistor suited

DATA SHEET NPN SILICON RF TWIN TRANSISTOR PA851TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES Low voltage operation 2 different built-in transistors (2SC5737, 2SC5736) Q1 Low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz Q2 Low phase distortion transistor suited for OSC applications fT = 5.

NPN SILICON GERMANIUM RF TRANSISTOR NESG3033M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) FEATURES The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz Maximum stable power gain MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz SiG

DATA SHEET NPN SILICON RF TWIN TRANSISTOR PA892TD NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES Ideal for low noise high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz Maximum available power gain MAG = 12.5 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz High fT fT =

DATA SHEET NPN SILICON RF TWIN TRANSISTOR PA862TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES Low voltage operation 2 different built-in transistors (2SC5435, 2SC5800) Q1 Built-in high gain transistor fT = 12.0 GHz TYP., S21e 2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2 Built-in low phase distortion

DATA SHEET NPN SILICON RF TWIN TRANSISTOR PA873TD NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES Built-in low phase distortion transistor suited for OSC applications fT = 4.5 GHz TYP., S21e 2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz Built-in 2 transistors (2 2SC5800) 6-pin lead-less minimold package BUILT-IN

DATA SHEET NPN SILICON RF TWIN TRANSISTOR PA873TS NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES Built-in low voltage operation, low phase distortion transistor suited for OSC applications fT = 4.5 GHz TYP., S21e 2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz Built-in 2 transistors (2 2SC5800) 6-pin super lead-les

DATA SHEET NPN SILICON RF TWIN TRANSISTOR PA828TD NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES Built-in low phase distortion transistor suited for OSC applications fT = 9.0 GHz TYP., S21e 2 = 7.5 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz Built-in 2 transist

BUK9M10-30E N-channel 30 V, 10 m logic level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetit

BUK9M12-60E N-channel 60 V, 12 m logic level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetit

BUK9M15-60E N-channel 60 V, 15 m logic level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetit

BUK7M15-40H N-channel 40 V, 15.0 m standard level MOSFET in LFPAK33 29 January 2019 Product data sheet 1. General description Automotive qualified standard level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications. 2. Features and benefits Fully aut

BUK9M14-40E N-channel 40 V, 14 m logic level MOSFET in LFPAK33 13 May 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive av

BUK9M19-60E N-channel 60 V, 19 m logic level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetit

BUK9M120-100E N-channel 100 V, 120 m logic level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Rep

BUK7M15-60E N-channel 60 V, 15 m standard level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 Compliant R

BUK9M17-30E N-channel 30 V, 17 m logic level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetit

BUK9M11-40E N-channel 40 V, 11 m logic level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetit

BUK7M11-40H N-channel 40 V, 11.0 m standard level MOSFET in LFPAK33 29 January 2019 Product data sheet 1. General description Automotive qualified standard level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications. 2. Features and benefits Fully aut

BUK7M19-60E N-channel 60 V, 19 m standard level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 Compliant R

BUK9M15-40H N-channel 40 V, 15.0 m logic level MOSFET in LFPAK33 29 January 2019 Product data sheet 1. General description Automotive qualified logic level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications. 2. Features and benefits Fully automotiv

BUK7M17-80E N-channel 80 V, 17 m standard level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 Compliant R

BUK9M156-100E N-channel 100 V, 156 m logic level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Rep

BUK7M10-40E N-channel 40 V, 10 m standard level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 Compliant R

BUK7M12-40E N-channel 40 V, 12 m standard level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 Compliant R

BUK9M11-40H N-channel 40 V, 11.0 m logic level MOSFET in LFPAK33 29 January 2019 Product data sheet 1. General description Automotive qualified logic level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications. 2. Features and benefits Fully automotiv

BUK7M12-60E N-channel 60 V, 12 m standard level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 Compliant R

IRLM110A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.44 Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.5 A Improved Gate Charge Extended Safe Operating Area SOT-223 Lower Leakage Current 10 A (Max.) @ VDS = 100V 2 Lower RDS(ON) 0.336 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbo

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 100V 2 Lower RDS(ON) 0.289 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 100V 2 Lower RDS(ON) 0.155 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va

IRLM120A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.22 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.3 A Improved Gate Charge Extended Safe Operating Area SOT-223 Lower Leakage Current 10 A (Max.) @ VDS = 100V 2 Lower RDS(ON) 0.176 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbo

BSM 100 GAL 120 DN2 IGBT Power Module Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 100 GAL 120 DN2 1200V 150A HALF BRIDGE GAL 2 C67076-A2012-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE = 20 k 120

Data Sheet 4V Drive Nch + Pch MOSFET SH8M14 Structure Dimensions (Unit mm) SOP8 Silicon N-channel MOSFET/ Silicon P-channel MOSFET (8) (5) Features 1) Low on-resistance. 2) High power package(SOP8). (1) (4) 3) Low voltage drive(4V drive). Application Switching Packaging specifications Inner circuit Package Taping (8) (7) (6) (5) Type Code TB Basic o

Data Sheet 4V Drive Nch + Pch MOSFET QS8M11 Structure Dimensions (Unit mm) TSMT8 Silicon N-channel MOSFET/ (8) (7) (6) (5) Silicon P-channel MOSFET Features (1) (2) (3) (4) 1) Low on-resistance. 2) High power package(TSMT8). 3) Low voltage drive(4V drive). Abbreviated symbol M11 Application Switching Packaging specifications Inner circuit Package Tapi

Data Sheet 4V Drive Nch + Pch MOSFET TT8M11 Structure Dimensions (Unit mm) Silicon N-channel MOSFET/ TSST8 Silicon P-channel MOSFET (8) (7) (6) (5) Features 1) Low on-resistance. (1) (2) (3) (4) 2) Low voltage drive(4V drive). 3) Small surface mount package(TSST8). Abbreviated symbol M11 Application Switching Packaging specifications Inner circuit (8)

Data Sheet 4V Drive Nch + Pch MOSFET QS8M13 Structure Dimensions (Unit mm) TSMT8 Silicon N-channel MOSFET/ (8) (7) (6) (5) Silicon P-channel MOSFET Features 1) Low on-resistance. (1) (2) (3) (4) 2) High power package(TSMT8). 3) Low voltage drive(4V drive). Abbreviated symbol M13 Application Switching Inner circuit (8) (7) (6) (5) Packaging specificati

Data Sheet 4V Drive Nch + Pch MOSFET MP6M14 Structure Dimensions (Unit mm) Silicon N-channel MOSFET/ MPT6 (Duel) Silicon P-channel MOSFET (6) (5) (4) Features 1) Low on-resistance. 2) Low voltage drive(4V drive). (1) (2) (3) Application Switching Packaging specifications Inner circuit Package Taping (6) (5) (4) Type Code TR 1 Basic ordering unit (

Data Sheet 1.2V Drive Nch + Pch MOSFET VT6M1 Structure Dimensions (Unit mm) Silicon N-channel MOSFET/ VMT6 Silicon P-channel MOSFET 1.2 0.5 (6) (5) (4) Features 1) Low on-resistance. (1) (2) (3) 2) Small package(VMT6). 0.16 0.13 3) Low voltage drive(1.2V drive). 0.4 0.4 0.8 0.1 Abbreviated symbol M01 Application Switching Packaging specifications In

Data Sheet 4V Drive Nch + Pch MOSFET MP6M11 Structure Dimensions (Unit mm) Silicon N-channel MOSFET/ MPT6 (Duel) Silicon P-channel MOSFET (6) (5) (4) Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. (1) (2) (3) 3) Small Surface Mount Package (MPT6). Application Switching Inner circuit (6) (5) (4) 1 Packaging specifications Package Ta

Data Sheet 4V Drive Nch + Pch MOSFET SH8M11 Structure Dimensions (Unit mm) SOP8 Silicon N-channel MOSFET/ Silicon P-channel MOSFET (8) (5) Features 1) Low on-resistance. 2) High power package(SOP8). (1) (4) 3) Low voltage drive(4V drive). Application Switching Packaging specifications Inner circuit (8) (7) (6) (5) Package Taping Type Code TB Basic o

1.5V Drive Nch+Pch MOSFET US6M11 Structure Dimensions (Unit mm) Silicon N-channel MOSFET / TUMT6 Silicon P-channel MOSFET Features 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive). 4) Built-in G-S Protection Diode. Abbreviated symbol M11 Applications Inner circuit Switching (6) (5) (4) 1 Packa

Data Sheet 4V Drive Nch + Pch MOSFET SH8M12 Structure Dimensions (Unit mm) SOP8 Silicon N-channel MOSFET/ Silicon P-channel MOSFET (8) (5) Features 1) Low on-resistance. 2) High power package(SOP8). (1) (4) 3) Low voltage drive(4V drive). Application Switching Inner circuit (8) (7) (6) (5) Packaging specifications Package Taping 2 2 (1) Tr1 Sou

US6M1 Transistors 4V+2.5V Drive Nch+Nch MOSFET US6M1 Structure Dimensions (Unit mm) Silicon N-channel / P-channel MOSFET TUMT6 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TUMT6). Abbreviated symbol M01 Application Power switching, DC / DC converter. Packaging specifications Equivalent circuit Package Tapi

Data Sheet 4V Drive Nch + Pch MOSFET SH8M13 Structure Dimensions (Unit mm) Silicon N-channel MOSFET/ SOP8 Silicon P-channel MOSFET (8) (5) Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. (1) (4) 3) Small Surface Mount Package (SOP8). Application Switching Packaging specifications Inner circuit Package Taping (8) (7) (6) (5) Type Code

Data Sheet 4V Drive Nch + Pch MOSFET MP6M12 Structure Dimensions (Unit mm) Silicon N-channel MOSFET/ MPT6 (Duel) Silicon P-channel MOSFET (6) (5) (4) Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. (1) (2) (3) 3) Small Surface Mount Package (MPT6). Application Switching Inner circuit (6) (5) (4) 1 Packaging specifications 2 Pac

Data Sheet 4V Drive Nch + Pch MOSFET QS8M12 Structure Dimensions (Unit mm) TSMT8 Silicon N-channel MOSFET/ (8) (7) (6) (5) Silicon P-channel MOSFET Features 1) Low on-resistance. (1) (2) (3) (4) 2) High power package(TSMT8). 3) Low voltage drive(4V drive). Abbreviated symbol M12 Application Switching Inner circuit (8) (7) (6) (5) Packaging specificati

1.5V Drive Nch + Pch MOSFET TT8M1 Structure Dimensions (Unit mm) Silicon N-channel MOSFET/ TSST8 Silicon P-channel MOSFET (8) (7) (6) (5) Features 1) Low on-resistance. (1) (2) (3) (4) 2) High power package (TSST8). 3) Low voltage drive (1.5V drive). Abbreviated symbol M01 Application Switching Packaging specifications Inner circuit Package Taping Type

SP8M10FRA SP8M10 Transistors AEC-Q101 Qualified 4V Drive Nch+Pch MOSFET SP8M10FRA SP8M10 Structure Dimensions (Unit mm) Silicon N-channel / P-channel MOSFET SOP8 5.0 1.75 0.4 (8) (5) Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). (1) (4) 0.2 1.27 1pin mark Application Power switching, DC / DC converter.

SQM110N06-04L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) 60 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 10 V 0.0035 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 4.5 V 0.0050 AEC-Q101 Qualifiedd ID (A) 120 100 % Rg and UIS T

SUM110N04-05H Vishay Siliconix N-Channel 40-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) Qg (Typ.) 175 C Junction Temperature RoHS 0.0053 at VGS = 10 V 40 95 110 COMPLIANT High Threshold Voltage at High Temperature D TO-263 G G D S Top View S N-Channel MOSFET Ordering Information SUM110N04-05H-E

SQM120N04-04 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 40 Definition RDS(on) ( ) at VGS = 10 V 0.0035 TrenchFET Power MOSFET ID (A) 120 Package with Low Thermal Resistance Configuration Single AEC-Q101 Qualifiedd D 100 % Rg and UIS Tested Co

SUM18N25-165 Vishay Siliconix N-Channel 250-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) ID (A) rDS(on) ( ) 175 C Junction Temperature RoHS 0.165 at VGS = 10 V 250 18 COMPLIANT Low Thermal Resistance Package D TO-263 G G D S Top View S Ordering Information SUM18N25-165-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLU

SQM120N02-1m3L www.vishay.com Vishay Siliconix Automotive N-Channel 20 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 20 Definition RDS(on) ( ) at VGS = 10 V 0.0013 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.0017 Package with Low Thermal Resistance ID (A) 120 100 % Rg and UIS Tested Configuration Sin

SQM120N08-05 www.vishay.com Vishay Siliconix Automotive N-Channel 75 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 75 Definition RDS(on) ( ) at VGS = 10 V 0.0048 TrenchFET Power MOSFET ID (A) 120 Package with Low Thermal Resistance Configuration Single AEC-Q101 Qualifiedd D 100 % Rg and UIS Tested TO-263

New Product SUM110P08-11 Vishay Siliconix P-Channel 80-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)b Qg (Typ) RoHS 0.0111 at VGS = - 10 V - 110 113 nC - 80 COMPLIANT TO-263 S G Drain Connected to Tab G D S Top View D Ordering Information SUM110P08-11 (Lead (Pb)-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C

New Product SUM110N04-2m1P Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, c Qg (Typ.) 100 % Rg and UIS Tested RoHS 0.0021 at VGS = 10 V 110 COMPLIANT 40 240 nC 0.0024 at VGS = 4.5 V 110 APPLICATIONS Synchronous Rectification Power Supplies D TO-263 G G D S Top View S

SQM110P06-8m9L www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) - 60 Package with Low Thermal Resistance RDS(on) ( ) at VGS = - 10 V 0.0089 100 % Rg and UIS Tested RDS(on) ( ) at VGS = - 4.5 V 0.0132 AEC-Q101 Qualifiedd ID (A) - 110 Material categorization Configuratio

SQM120N06-3m5L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 60 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.0035 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = 4.5 V 0.0039 100 % Rg and UIS Tested ID (A) 120 Material categorization Configuration Single

SQM100N04-3m5 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 40 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.0030 100 % Rg and UIS Tested ID (A) 100 AEC-Q101 Qualifiedd Configuration Single Material categorization D For definitions of compliance ple

SQM100N10-10 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 100 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.0105 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = 4.5 V 0.0120 100 % Rg and UIS Tested ID (A) 100 Material categorization Configuration Sin

SQM120N03-1m5L Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 30 Definition RDS(on) ( ) at VGS = 10 V 0.0015 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.0020 Package with Low Thermal Resistance ID (A) 120 100 % Rg and UIS Tested Configuration Single AEC-Q10

SQM120P04-04L www.vishay.com Vishay Siliconix Automotive P-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) - 40 Definition RDS(on) ( ) at VGS = - 10 V 0.0040 TrenchFET Power MOSFET RDS(on) ( ) at VGS = - 4.5 V 0.0060 Package with Low Thermal Resistance ID (A) - 120 AEC-Q101 Qualifiedd Configuration

SQM110N04-03 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) 40 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 10 V 0.0028 Package with Low Thermal Resistance ID (A) 120 AEC-Q101 qualifiedd Configuration Single 100 % Rg and UIS Tested Compl

SQM110P04-04L www.vishay.com Vishay Siliconix Automotive P-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) - 40 Definition RDS(on) ( ) at VGS = - 10 V 0.0040 TrenchFET Power MOSFET RDS(on) ( ) at VGS = - 4.5 V 0.0060 Package with Low Thermal Resistance ID (A) - 120 AEC-Q101 Qualifiedd Configuration

SUM110P04-04L Vishay Siliconix P-Channel 40-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)d Available New Package with Low Thermal Resistance 0.0042 at VGS = - 10 V - 110 RoHS* - 40 0.0062 at VGS = - 4.5 V - 110 COMPLIANT S TO-263 G G D S Top View Ordering Information SUM110P04-04L SUM110P04-04L (Lead (Pb

SQM120N04-02L www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 40 Definition RDS(on) ( ) at VGS = 10 V 0.0023 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.0041 Package with Low Thermal Resistance ID (A) 120 AEC-Q101 Qualifiedd Configuration Single

SUM110N04-04 Vishay Siliconix N-Channel 40-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 40 0.0035 at VGS = 10 V 110a RoHS* COMPLIANT TO-263 D G G D S Top View S Ordering Information SUM110N04-04 SUM110N04-04-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RA

SQM18N33-160H www.vishay.com Vishay Siliconix Automotive N-Channel 330 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 330 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.160 AEC-Q101 Qualified ID (A) 31 100 % Rg and UIS Tested Configuration Single Material categorization For definitions of compliance plea

SQM120N04-1m9 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES TrenchFET Power MOSFET PRODUCT SUMMARY Package with Low Thermal Resistance VDS (V) 40 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = 10 V 0.0019 100 % Rg and UIS Tested ID (A) 120 Material categorization Configuration Single For definitions of compliance please

SUM110N06-3m4L Vishay Siliconix N-Channel 60-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( ) ID (A) 100 % Rg Tested RoHS 0.0034 at VGS = 10 V COMPLIANT 60 110a 0.0041 at VGS = 4.5 V D TO-263 G G D S Top View S N-Channel MOSFET Ordering Information SUM110N06-3m4L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS

SQM120P06-07L www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) - 60 Package with Low Thermal Resistance RDS(on) ( ) at VGS = - 10 V 0.0067 100 % Rg and UIS Tested RDS(on) ( ) at VGS = - 4.5 V 0.0088 AEC-Q101 Qualifiedd ID (A) - 120 Material categorization Configurat

SQM120N06-06 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 Package with low thermal resistance RDS(on) ( ) at VGS = 10 V 0.006 AEC-Q101 qualified d ID (A) 120 100 % Rg and UIS tested Configuration Single Package TO-263 Material categorization for definitions of co

SUM110N04-02L Vishay Siliconix N-Channel 40-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) Available New Package with Low Thermal Resistance 0.0023 at VGS = 10 V RoHS* 40 110a 0.0038 at VGS = 4.5 V COMPLIANT D TO-263 G G D S Top View S Ordering Information SUM110N04-02L SUM110N04-02L-E3 (Lead (Pb)-fr

SQM100N04-2m7 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 40 Package with low thermal resistance RDS(on) ( ) at VGS = 10 V 0.0027 100 % Rg and UIS tested ID (A) 100 AEC-Q101 qualified d Configuration Single Package TO-263 Material categorization for definitions of

SQM120N04-1m7L www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 40 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.0017 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.0020 AEC-Q101 Qualifiedd ID (A) 120 Material categorization Configuration Sin

SUM110P06-08L Vishay Siliconix P-Channel 60-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)d Available Package with Low Thermal Resistance 0.008 at VGS = - 10 V RoHS* - 60 - 110 100 % Rg Tested 0.0105 at VGS = - 4.5 V COMPLIANT S TO-263 G G D S Top View D Ordering Information SUM110P06-08L SUM110P06-08L-E

SUM110N06-3m9H Vishay Siliconix N-Channel 60-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) Qg (Typ) 175 C Junction Temperature RoHS 0.0039 at VGS = 10 V 60 110a 200 COMPLIANT Low Thermal Resistance Package High Threshold Voltage At High Temperature 100 % Rg Tested D TO-263 G G D S Top Vi

New Product SUM110P08-11L Vishay Siliconix P-Channel 80-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)b Qg (Typ) RoHS 0.0112 at VGS = - 10 V - 110 COMPLIANT - 80 85 nC 0.0145 at VGS = - 4.5 V - 109 TO-263 S G Drain Connected to Tab G D S Top View D Ordering Information SUM110P08-11L-E3 (Lead (Pb)-free) P-Channel MOSFET A

SQM110N08-05 www.vishay.com Vishay Siliconix Automotive N-Channel 75 V (D-S) 175 C MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) 75 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 10 V 0.0048 Package with Low Thermal Resistance ID (A) 120 AEC-Q101 Qualifiedd Configuration Single 100 % Rg and UIS Tested D TO-263

SQM200N04-1m1L www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 40 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.0011 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.0013 AEC-Q101 Qualifiedd ID (A) 200 Material categorization Configuration Sin

SUM110N10-09 Vishay Siliconix N-Channel 100 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) New Package with Low Thermal Resistance 100 0.0095 at VGS = 10 V 110a 100 % Rg Tested D TO-263 G G D S Top View S Ordering Information SUM110N10-09-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC =

SQM110N04-04 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) 40 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 10 V 0.0035 Package with Low Thermal Resistance ID (A) 120 AEC-Q101 Qualifiedd Configuration Single 100 % Rg and UIS Tested D Co

SQM120N04-2m1 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 40 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.0021 100 % Rg and UIS Tested ID (A) 120 AEC-Q101 Qualifiedd Configuration Single Material categorization D For definitions of compliance

SQM110N04-03L www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 40 Definition RDS(on) ( ) at VGS = 10 V 0.0035 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.0053 Package with Low Thermal Resistance ID (A) 120 AEC-Q101 Qualifiedd Configuration Single

SUM110N04-03P Vishay Siliconix N-Channel 40-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.0031 at VGS = 10 V 40 110a RoHS* Package with Low Thermal Resistance COMPLIANT Extremely Low Qgd WFETTM Technology for Low Switching Losses 100 % Rg Tested D TO

SUP50N03-5m1P Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.0051 at VGS = 10 V 50d TrenchFET Power MOSFET 30 21.7 0.0063 at VGS = 4.5 V 50d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Supply - Seco

SQM110N10-09 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 C MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) 100 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 10 V 0.0095 Package with Low Thermal Resistance ID (A) 120 AEC-Q101 Qualifiedd Configuration Single 100 % Rg and UIS Tested D

SQM110P06-07L www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) - 60 Package with Low Thermal Resistance RDS(on) ( ) at VGS = - 10 V 0.0067 100 % Rg and UIS Tested RDS(on) ( ) at VGS = - 4.5 V 0.0088 AEC-Q101 Qualifiedd ID (A) - 120 Material categorization For definitio

SUM110N05-06L Vishay Siliconix N-Channel 55-V (D-S), 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) Qg (Typ) Available 175 C Junction Temperature 0.006 at VGS = 10 V 110 RoHS* 55 65 Low Thermal Resistance Package 0.0085 at VGS = 4.5 V 92 COMPLIANT APPLICATIONS Industrial D TO-263 G G D S Top View S

SQM120N10-3m8 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 100 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.0038 AEC-Q101 Qualifiedd ID (A) 120 100 % Rg and UIS Tested Configuration Single Material categorization D For definitions of compliance p

SQM120N04-03L www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 40 Definition RDS(on) ( ) at VGS = 10 V 0.0035 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.0053 Package with Low Thermal Resistance ID (A) 120 AEC-Q101 Qualifiedd Configuration Single

SUM110N04-2m3L Vishay Siliconix N-Channel 40-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( ) ID (A) 100 % Rg Tested RoHS 0.0023 at VGS = 10 V COMPLIANT 40 110a 0.003 at VGS = 4.5 V D TO-263 G G D S Top View S N-Channel MOSFET Ordering Information SUM110N04-2m3L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T

SQM120N04-1m8 Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 40 Definition RDS(on) ( ) at VGS = 10 V 0.0018 TrenchFET Power MOSFET ID (A) 120 Package with Low Thermal Resistance Configuration Single AEC-Q101 Qualifiedd D 100 % Rg and UIS Tested Compliant to RoHS

SQM120N10-09 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition RDS(on) ( ) at VGS = 10 V 0.0095 TrenchFET Power MOSFET ID (A) 120 Package with Low Thermal Resistance Configuration Single AEC-Q101 Qualifiedd D 100 % Rg and UIS Tested

SUM110N04-03 Vishay Siliconix N-Channel 40-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) Available Package with Low Thermal Resistance 0.0028 at VGS = 10 V 40 110a RoHS* COMPLIANT D TO-263 G G D S Top View S Ordering Information SUM110N04-03 SUM110N04-03-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MA

SQM120N06-04L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) ( ) at VGS = 10 V 0.0035 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.0050 Package with Low Thermal Resistance ID (A) 120 AEC-Q101 Qualifiedd Configuration Single

SQM50N04-4m1 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 40 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.0041 AEC-Q101 Qualifiedd ID (A) 50 100 % Rg and UIS Tested Configuration Single Material categorization For definitions of compliance please s

SUM120N04-1m7L www.vishay.com Vishay Siliconix N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) d Qg (TYP.) 100 % Rg and UIS tested 0.0017 at VGS = 10 V 120 40 190 Material categorization 0.0020 at VGS = 4.5 V 120 For definitions of compliance please see www.vishay.com/doc?99912 TO-263 D APPLICATIONS

SQM120N04-03 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 40 Definition RDS(on) ( ) at VGS = 10 V 0.0028 TrenchFET Power MOSFET ID (A) 120 Package with Low Thermal Resistance Configuration Single AEC-Q101 qualifiedd 100 % Rg and UIS Tested D Co

SUM110N03-03P Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D 175_C Junction Temperature V(BR)DSS (V) rDS(on) (W) ID (A)a D Optimized for Low-Side Synchronous Rectifier 0.0026 @ VGS = 10 V 110a D 100% Rg Tested 30 30 0.004 @ VGS = 4.5 V 110a APPLICATIONS D Desktop or Server CPU Core D TO-263 DRAIN connected to TAB G G D

SQM110N04-02L www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) 40 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 10 V 0.0023 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 4.5 V 0.0041 AEC-Q101 Qualifiedd ID (A) 120 100 % Rg and UIS T

SUM110P06-07L www.vishay.com Vishay Siliconix P-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( )ID (A) d Package with low thermal resistance 0.0069 at VGS = -10 V -60 -110 Material categorization 0.0088 at VGS = -4.5 V for definitions of compliance please see www.vishay.com/doc?99912 S TO-263 G S S P-C

SUM110P08-11L Vishay Siliconix P-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)b Qg (Typ) Material categorization For definitions of compliance please see 0.0112 at VGS = - 10 V - 110 - 80 85 nC www.vishay.com/doc?99912 0.0145 at VGS = - 4.5 V - 109 TO-263 S G Drain Connected to Tab G D S Top View D Order

SQM110N04-04 Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 40 Definition RDS(on) ( ) at VGS = 10 V 0.0035 TrenchFET Power MOSFET ID (A) 120 Package with Low Thermal Resistance Configuration Single AEC-Q101 Qualifiedd D Compliant to RoHS Directive 2002/95/EC TO-263

SUM110N03-04P New Product Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET FEATURES D TrenchFETr Power MOSFET D 175_C Junction Temperature PRODUCT SUMMARY D Optimized for Low-Side Synchronous Rectifier Operation D New Package with Low Thermal Resistance V(BR)DSS (V) rDS(on) (W) ID (A) D 100% Rg Tested 0.0042 @ VGS = 10 V 110 30 30 0.0065 @ VGS = 4.5 V 77 APPLICATIONS D DC/DC C

SQM120N04-1m7 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES TrenchFET Power MOSFET PRODUCT SUMMARY Package with Low Thermal Resistance VDS (V) 40 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = 10 V 0.0017 100 % Rg and UIS Tested ID (A) 120 Material categorization Configuration Single For definitions of compliance please

SUM110P04-05 Vishay Siliconix P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Qg (Typ.) RoHS 0.005 at VGS = - 10 V - 110 185 nC - 40 COMPLIANT TO-263 S G Drain Connected to Tab G D S Top View D Ordering Information SUM110P04-05-E3 (Lead (Pb)-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless o

SUM110N08-07P Vishay Siliconix N-Channel 75 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.007 at VGS = 10 V 75 Material categorization 110d 69 For definitions of compliance please see www.vishay.com/doc?99912 TO-263 APPLICATIONS Synchronous Rectification D G D G S Top Vie

SQD50N04-4m1 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 40 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.0041 AEC-Q101 Qualifiedd ID (A) 50 100 % Rg and UIS Tested Configuration Single Material categorization For definitions of compliance please s

CZDM1003N SURFACE MOUNT SILICON www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CZDM1003N is a MOSFET 3.0 Amp, 100 Volt silicon N-Channel enhancement- mode MOSFET, designed for motor control and relay driver applications. This MOSFET offers high current, low rDS(ON), and low gate charge. MARKING FULL PART NUMBER SOT-223 CASE FEATURES APPL

CMKT5089M10 www.centralsemi.com SURFACE MOUNT DUAL NPN SILICON DESCRIPTION MATCHED hFE TRANSISTORS The CENTRAL SEMICONDUCTOR CMKT5089M10 consists of two (2) individually isolated 5089 NPN silicon transistors with matched hFE. This ULTRAmini device is manufactured by the epitaxial planar process and epoxy molded in an SOT-363 surface mount package. The CMKT5089M10 has been d

CXDM1002N SURFACE MOUNT SILICON www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CXDM1002N is MOSFET a high voltage silicon N-Channel enhancement-mode MOSFET designed for high speed pulsed amplifier and driver applications. This MOSFET offers high voltage, low rDS(ON), low threshold voltage, and low leakage current. MARKING FULL PART NUMBE

D a t a S h e e t , Aug. 2010 Control Integrated POwer System (CIPOS ) IGCM1 5F60G A http //www.lspst.com F o r P o w e r M a n a g e m e n t A p p l i c a t i o n CIPOS IGCM15F60GA Revision History 2010-08 Ver.1.1 Previous Version Datasheet Ver. 1.0 Page Subjects (major changes since last revision) 11 tFLTCLR Authors Junho Song, Junbae Lee and Daewoong Chung

IMW65R048M1H MOSFET PG-TO 247-3 650 V CoolSiC M1 SiC Trench Power Device The 650 V CoolSiC is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgap Tab SiC material characteristics, the 650V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and

IMZ120R090M1H IMZ120R090M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Drain pin 1 Very low switching losses Gate Threshold-free on state characteristic pin 4 Benchmark gate threshold voltage, V = 4.5V GS(th) Sense Source 0V turn-off gate voltage for easy and simple gate drive pin 3 pin 2 Fully controllable dV/dt Robust

IMZ120R140M1H IMZ120R140M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Drain pin 1 Very low switching losses Gate Threshold-free on state characteristic pin 4 Benchmark gate threshold voltage, V = 4.5V GS(th) Sense Source 0V turn-off gate voltage for easy and simple gate drive pin 3 pin 2 Fully controllable dV/dt Robust

IMW120R060M1H IMW120R060M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drain pin 2 Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control

FF45MR12W1M1_B11 EasyDUAL Modul mit CoolSiC Trench MOSFET und PressFIT / NTC EasyDUAL module with CoolSiC Trench MOSFET and PressFIT / NTC Vorl ufige Daten / Preliminary Data J V = 1200V DSS I = 25A / I = 50A D nom DRM Potentielle Anwendungen Potential Applications Anwendungen mit hohen Schaltfrequenzen High Frequency Switching application DC/DC Wandler DC/DC c

IMZA65R072M1H MOSFET PG-TO 247-4-3 650 V CoolSiC M1 SiC Trench Power Device The 650 V CoolSiC is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgap Tab SiC material characteristics, the 650V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperature a

IMZA65R048M1H MOSFET PG-TO 247-4-3 650 V CoolSiC M1 SiC Trench Power Device The 650 V CoolSiC is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgap Tab SiC material characteristics, the 650V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperature a

IMW120R090M1H IMW120R090M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drain pin 2 Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control

Technische Information / Technical Information IGBT-Module BSM 150 GB 60 DLC IGBT-Modules H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 600 V collector-emitter voltage Tc= 60 C IC,nom. 150 A Kollektor-Dauergleichstrom DC-collector current Tc= 25 C IC 180 A Periodischer Kollektor Spitzenstrom

IMZ120R350M1H IMZ120R350M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Drain pin 1 Very low switching losses Gate Threshold-free on state characteristic pin 4 Benchmark gate threshold voltage, V = 4.5V GS(th) Sense Source 0V turn-off gate voltage for easy and simple gate drive pin 3 pin 2 Fully controllable dV/dt Robust

IMZ120R060M1H IMZ120R060M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Drain pin 1 Very low switching losses Gate Threshold-free on state characteristic pin 4 Benchmark gate threshold voltage, V = 4.5V GS(th) Sense Source 0V turn-off gate voltage for easy and simple gate drive pin 3 pin 2 Fully controllable dV/dt Robust

AIMW120R045M1 AIMW120R045M1 CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Revolutionary semiconductor material - Silicon Carbide Very low switching losses Threshold-free on state characteristic IGBT-compatible driving voltage (15V for turn-on) 0V turn-off gate voltage Benchmark gate threshold voltage, V =4.5V GS(th) Fully c

D a t a S h e e t , Aug. 2010 Control Integrated POwer System (CIPOS ) IGCM10F60G A http //www.lspst.com F o r P o w e r M a n a g e m e n t A p p l i c a t i o n CIPOS IGCM10F60GA Revision History 2010-08 Ver.1.1 Previous Version Datasheet Ver. 1.0 Page Subjects (major changes since last revision) 11 tFLTCLR Authors Junho Song, Junbae Lee and Daewoong Chung E

IMW120R220M1H IMW120R220M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drain pin 2 Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control

IMW65R027M1H MOSFET PG-TO 247-3 650 V CoolSiC M1 SiC Trench Power Device The 650 V CoolSiC is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgap Tab SiC material characteristics, the 650V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and

IMW120R140M1H IMW120R140M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drain pin 2 Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control

IMW120R350M1H IMW120R350M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drain pin 2 Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control

D a t a S h e e t , Aug. 2010 Control Integrated POwer System (CIPOS ) IGCM10F60HA http //www.lspst.com F o r P o w e r M a n a g e m e n t A p p l i c a t i o n CIPOS IGCM10F60HA Revision History 2010-08 Ver.1.1 Previous Version Datasheet Ver. 1.0 Page Subjects (major changes since last revision) 11 tFLTCLR Authors Junho Song, Junbae Lee and Daewoong Chung Ed

IMW120R030M1H IMW120R030M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drain pin 2 Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control

F3L15MR12W2M1_B69 EasyPACK Modul mit CoolSiC Trench MOSFET und PressFIT / NTC EasyPACK module with CoolSiC Trench MOSFET and PressFIT / NTC Vorl ufige Daten / Preliminary Data J V = 1200V DSS I = 75A / I = 150A D nom DRM Potentielle Anwendungen Potential Applications Anwendungen mit hohen Schaltfrequenzen High Frequency Switching application DC/DC Wandler

IMZA65R027M1H MOSFET PG-TO 247-4-3 650 V CoolSiC M1 SiC Trench Power Device The 650 V CoolSiC is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgap Tab SiC material characteristics, the 650V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperature a

Technische Information / technical information IGBT-Module BSM100GB120DLC IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter H chstzul ssige Werte / maximum rated values Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V collector-emitter voltage Kollektor-Dauergleichstro

IMW120R045M1 IMW120R045M1 CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drain Features pin 2 Very low switching losses Gate Threshold-free on state characteristic pin 1 Wide gate-source voltage range Source pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage Fully controllable dV/dt Commutation robus

IMZ120R220M1H IMZ120R220M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Drain pin 1 Very low switching losses Gate Threshold-free on state characteristic pin 4 Benchmark gate threshold voltage, V = 4.5V GS(th) Sense Source 0V turn-off gate voltage for easy and simple gate drive pin 3 pin 2 Fully controllable dV/dt Robust

IMW65R107M1H MOSFET PG-TO 247-3 650 V CoolSiC M1 SiC Trench Power Device The 650 V CoolSiC is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgap Tab SiC material characteristics, the 650V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and

IMZ120R030M1H IMZ120R030M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Drain pin 1 Very low switching losses Gate Threshold-free on state characteristic pin 4 Benchmark gate threshold voltage, V = 4.5V GS(th) Sense Source 0V turn-off gate voltage for easy and simple gate drive pin 3 pin 2 Fully controllable dV/dt Robust

Technische Information / technical information IGBT-Module BSM150GB120DLC IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter H chstzul ssige Werte / maximum rated values Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V collector-emitter voltage Kollektor-Dauergleichstro

IMW65R072M1H MOSFET PG-TO 247-3 650 V CoolSiC M1 SiC Trench Power Device The 650 V CoolSiC is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgap Tab SiC material characteristics, the 650V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and

GWM 180-004X2 VDSS = 40 V Three phase full Bridge ID25 = 180 A with Trench MOSFETs RDSon typ. = 1.9 mW in DCB isolated high current package L+ Preliminary data G3 G5 G1 S3 S5 S1 L1 L2 L3 Straight leads Surface Mount Device G4 G6 G2 S4 S6 S2 L- Applications MOSFETs AC drives Symbol Conditions Maximum Ratings in automobiles VDSS TJ = 25 C to 150 C 40 V - electr

VDSS ID25 RDS(on) MegaMOSTMFET IXTH / IXTM 10N100 1000 V 10 A 1.20 IXTH / IXTM 12N100 1000 V 12 A 1.05 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C 10N

FMD 15-06KC5 Advanced Technical Information FDM 15-06KC5 ID25 = 15 A CoolMOS 1) Power MOSFET VDSS = 600 V with HiPerDyn FRED RDS(on) max = 0.165 Buck and Boost Topologies 3 3 ISOPLUS i4 Electrically isolated back surface T 2500 V electrical isolation 5 D N-Channel Enhancement Mode 1 4 4 Low RDSon, high VDSS MOSFET isolated back E72873 5 Ultra low gate char

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GWM100-0085X1 VDSS = 85 V Three phase full Bridge ID25 = 103 A with Trench MOSFETs RDSon typ. = 5.5 mW in DCB isolated high current package L+ G3 G5 G1 S3 S5 S1 L1 L2 L3 Straight leads Surface Mount Device G4 G6 G2 S4 S6 S2 L- Applications MOSFETs AC drives Symbol Conditions Maximum Ratings in automobiles VDSS TJ = 25 C to 150 C 85 V - electric power steering

VDSS ID25 RDS(on) IXTH / IXTM 11N80 800 V 11 A 0.95 MegaMOSTMFET IXTH / IXTM 13N80 800 V 13 A 0.80 N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V D (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C 11N80 11

VDSS ID25 RDS(on) Standard IXTH 12 N50A 500 V 12 A 0.4 Power MOSFET IXTM 12 N50A 500 V 12 A 0.4 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V D (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C12 A IDM TC

Advance Technical Information TrenchT2TM HiperFET VDSS = 150V FMM110-015X2F N-Channel Power ID25 = 53A MOSFET RDS(on) 20m 3 3 T1 trr(typ) = 85ns 5 5 4 4 T2 1 1 Phase Leg Topology ISOPLUS i4-PakTM 2 2 Symbol Test Conditions Maximum Ratings TJ -55 ... +175 C 1 TJM 175 C Isolated Tab Tstg -55 ... +175 C 5 VISOLD 50/60HZ, RMS, t

VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGH/IXGM 17 N100 1000 V 34 A 3.5 V High speed IGBT IXGH/IXGM 17 N100A 1000 V 34 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1000 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C34 A IC90 TC = 90 C17 A TO-204 AE (IXGM) ICM TC = 25 C

GWM 100-01X1 VDSS = 100 V Three phase full Bridge ID25 = 90 A with Trench MOSFETs RDSon typ. = 7.5 mW in DCB isolated high current package L+ G3 G5 G1 S3 S5 S1 L1 L2 L3 Straight leads Surface Mount Device G4 G6 G2 S4 S6 S2 L- Applications MOSFETs AC drives Symbol Conditions Maximum Ratings in automobiles VDSS TJ = 25 C to 150 C 100 V - electric power steering

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 10 N90 900 V 10 A 1.1 Power MOSFETs IXFH/IXFM 12 N90 900 V 12 A 0.9 IXFH/IXFT 13 N90 900 V 13 A 0.8 N-Channel Enhancement Mode 250 ns High dv/dt, Low trr, HDMOSTM Family trr TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 1

VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGH/IXGM 17 N100 1000 V 34 A 3.5 V High speed IGBT IXGH/IXGM 17 N100A 1000 V 34 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1000 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C34 A IC90 TC = 90 C17 A TO-204 AE (IXGM) ICM TC = 25 C

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 15 N60 600 V 15 A 0.50 W Power MOSFETs IXFH/IXFM 20 N60 600 V 20 A 0.35 W trr 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 600 V (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 2

HiPerFETTM IXFH 13 N50 VDSS = 500 V Power MOSFETs IXFM 13 N50 ID (cont) = 13 A RDS(on) = 0.4 W N-Channel Enhancement Mode trr 250 ns High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 500 V (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C13 A TO-204 AA

VMM 1500-0075X2 VDSS = 75 V Dual Power ID25 = 1560 A MOSFET Module RDS(on) = 0.38 m Phaseleg Configuration 11 3 10 3 2 9 1 8 8 9 1 11 10 2 Features MOSFET T1 + T2 Trench MOSFETs Symbol Conditions Maximum Ratings - low RDSon VDSS TVJ = 25 C to 150 C 75 V - optimized intrinsic reverse diode VGS 20 V package - low inductive current path ID25 TC = 2

FDM 100-0045SP ID25 = 100 A Buck Chopper VDSS = 55 V with Trench Power MOSFET RDSon typ. = 5.7 m and Schottky Diode in ISOPLUS i4-PACTM 3 Preliminary data 5 4 1 2 5 Features MOSFET trench MOSFET Symbol Conditions Maximum Ratings - very low on state resistance RDSon - fast switching VDSS TVJ = 25 C to 150 C 55 V Schottky diode - low forward

GWM 120-0075X1 VDSS = 75 V Three phase full Bridge ID25 = 110 A with Trench MOSFETs RDSon typ. = 4.0 mW in DCB isolated high current package L+ G3 G5 G1 S3 S5 S1 L1 L2 L3 Straight leads Surface Mount Device G4 G6 G2 S4 S6 S2 L- Applications MOSFETs AC drives Symbol Conditions Maximum Ratings in automobiles VDSS TVJ = 25 C to 150 C 75 V - electric power steerin

GWM 160-0055X1 VDSS = 55 V Three phase full Bridge ID25 = 150 A with Trench MOSFETs RDSon typ. = 2.7 mW in DCB isolated high current package L+ G3 G5 G1 S3 S5 S1 L1 L2 L3 Straight leads Surface Mount Device G4 G6 G2 S4 S6 S2 L- Applications MOSFETs AC drives Symbol Conditions Maximum Ratings in automobiles VDSS TJ = 25 C to 150 C 55 V - electric power steering

GWM100-0085X1 VDSS = 85 V Three phase full Bridge ID25 = 103 A with Trench MOSFETs RDSon typ. = 5.5 mW in DCB isolated high current package L+ G3 G5 G1 S3 S5 S1 L1 L2 L3 Straight leads Surface Mount Device G4 G6 G2 S4 S6 S2 L- Applications MOSFETs AC drives Symbol Conditions Maximum Ratings in automobiles VDSS TJ = 25 C to 150 C 85 V - electric power steering

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 11 N80 800 V 11 A 0.95 W Power MOSFETs IXFH/IXFM 13 N80 800 V 13 A 0.80 W trr 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 800 V VGS Continuous 20 V (TAB) VGSM Transient 30 V ID25 TC = 2

Advance Technical Information TrenchT2TM HiperFET VDSS = 75V FMM150-0075X2F N-Channel Power ID25 = 120A MOSFET RDS(on) 5.8m 3 3 T1 trr(typ) = 66ns 5 5 4 4 T2 1 1 Phase Leg Topology ISOPLUS i4-PakTM 2 2 Symbol Test Conditions Maximum Ratings TJ -55 ... +175 C 1 TJM 175 C Isolated Tab Tstg -55 ... +175 C 5 VISOL 50/60HZ, RMS, t

OM120L60SB OM90L120SB Preliminary Data Sheet OM100F60SB OM70F120SB IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES High Current, High Voltage 600V And 1200V, Up To 150 Amp IGBTs With FRED Diodes FEATURES Includes Internal FRED Diode Rugged Package Design Solder Terminals Very Low Saturation Voltage Fast Switching, Low Drive Current Available Screened To MIL-

205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.com ELECTRICAL CHARACTERISTICS OM150F120CMD (Tc= 25 C unless otherwise specified) Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage, VCE=0V VCES 1200 V Zero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 2 A Gate Emitter Leakage Current, VGE=+/-15

205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.com ELECTRICAL CHARACTERISTICS OM150F120CMC (Tc= 25 C unless otherwise specified) Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage, VCE=0V VCES 1200 V Zero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 2 A Gate Emitter Leakage Current, VGE=+/-15

OM11N60SA OM11N55SA POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE 600V & 550V, 11 Amp, N-Channel MOSFET In Hermetic Metal Package FEATURES Isolated Hermetic Metal Package Fast Switching Low RDS(on) Available Screened To MIL-S-19500, TX, TXV And S Ceramic Feedthroughs Also Available DESCRIPTION This series of hermetically packaged products feature the latest

205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.com ELECTRICAL CHARACTERISTICS OM150L120CMD (Tc= 25 C unless otherwise specified) Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage, VCE=0V VCES 1200 V Zero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 2 A Gate Emitter Leakage Current, VGE=+/-15

205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246,www.omnirel.com ELECTRICAL CHARACTERISTICS OM150L120CMA (Tc= 25 C unless otherwise specified) Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage, VCE=0V VCES 1200 V Zero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 2 A Gate Emitter Leakage Current, VGE=+/-15V

OM130STC RADIATION HARDENED POWER MOSFETS IN HERMETIC ISOLATED PACKAGE N-CHANNEL 100V, 10 Amp, N-Channel, Radiation Hardened Power MOSFET In A Hermetic Metal Package FEATURES Rated As Radiation Hard Avalanche Energy Rated Isolated Hermetic Package Low RDS(on) High Switching Speeds Screened to TX, TXV And S Levels DESCRIPTION This N-Channel Power MOSFET produ

OM1N100SA OM5N100SA OM1N100ST OM3N100SA OM6N100SA OM3N100ST POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE 1000V, Up To 6 Amp, N-Channel MOSFET In Hermetic Metal Package FEATURES Isolated Hermetic Metal Package Fast Switching Low RDS(on) Available Screened To MIL-19500, TX, TXV And S Ceramic Feedthroughs Also Available DESCRIPTION This series of hermetically pa

205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.com ELECTRICAL CHARACTERISTICS OM150L120CMC (Tc= 25 C unless otherwise specified) Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage, VCE=0V VCES 1200 V Zero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 2 A Gate Emitter Leakage Current, VGE=+/-15

205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246,www.omnirel.com ELECTRICAL CHARACTERISTICS OM150F120CMA (Tc= 25 C unless otherwise specified) Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage, VCE=0V VCES 1200 V Zero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 2 A Gate Emitter Leakage Current, VGE=+/-15V

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

This product complies with the RoHS Directive (EU 2002/95/EC). MTM13127 Silicon P-channel MOS FET For DC-DC converter circuits For swiching circuits Overview Package MTM13127 is the P-channel MOS FET that is highly suitable ofr DC-DC Code converter and other switching circuits. Mini3-G3-B Package dimension clicks here. Click! Features Low drain

Doc No. TT4-EA-14584 Revision. 2 Product Standards MOS FET MTM131230BBF MTM131230BBF Silicon P-channel MOSFET Unit mm 2.9 For switching 0.4 0.16 3 Features Low drain-source ON resistance RDS(on)typ. = 40 m ( VGS = -4.0 V ) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL Level 1 compliant) 1 2 1.1 Marking Symbol BL (0.95)(0.95) 1.9 1. Gate

This product complies with the RoHS Directive (EU 2002/95/EC). MTM13227 Silicon N-channel MOSFET For switching Features Package Low on-resistance Ron = 85 mW (VGS = -4.0 V) Code Small package Mini3-G3-B Mini3-G3-B Contributes to miniaturization of sets, reduction of component count. Pin Name Eco-friendly Halogen-free package 1 Gate Packaging

APT20M18B2VR A20M18LVR 200V 100A 0.018 B2VR POWER MOS V MOSFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LV

APT20M18B2VFR A20M18LVFR 200V 100A 0.018 B2VFR POWER MOS V FREDFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.

APT20M18B2VFR APT20M18LVFR 200V 100A 0.018W B2VFR POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVFR Identical

APT30M17JLL 300V 135A 0.017W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's

APT20M16B2LL APT20M16LLL 200V 100A 0.016W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast

APT20M11JLL 200V 176A 0.011 R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses "UL Recognized" along with exceptionall

APT20M11JVFR 200V 175A 0.011 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. ISOTOP Fast Recovery Body Diode 100% Avalanche

APT20M16B2LL APT20M16LLL 200V 100A 0.016 R B2LL POWER MOS 7 MOSFET T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses LL

APT30M19JVFR 300V 130A 0.019 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. ISOTOP Fast Recovery Body Diode 100% Avalanche

APT10M19BVR 100V 75A 0.019 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

APT20M10JLL 200V 185A 0.010 W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's

APT10M19BVR 100V 75A 0.019 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

APT20M18B2VR APT20M18LVR 200V 100A 0.018W B2VR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVR Identical Specificati

APT10M19BVFR 100V 75A 0.019 POWER MOS V FREDFET TO-247 Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avala

APT10M11JVR 100V 144A 0.011 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche

APT10M11B2VR 100V 100A 0.011 POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D L

APT10M19SVR 100V 75A 0.019 POWER MOS V D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower

APT20M10JFLL 200V 185A 0.010W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent wi

APT10M11B2VFR APT10M11LVFR 100V 100A 0.011W B2VFR POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVFR Identical

APT10M19BVFR APT10M19SVFR 100V 75A 0.019 BVFR POWER MOS V FREDFET D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. SV

APT10M11LVR 100V 100A 0.011 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.. Faster Switching 100% Avalanche Tested D Low

APT20M13PVR 200V 146A 0.013 POWER MOS V P-Pack Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lowe

APT20M11JVR 200V 175A 0.011 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche

APT20M10JLL 200V 185A 0.010W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's

APT20M16B2FLL APT20M16LFLL 200V 100A 0.016 R B2FLL POWER MOS 7 FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses

APT20M19JVR 200V 112A 0.019 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche

APT20M11JFLL 200V 176A 0.011 R POWER MOS 7 FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switchin

APT10M11JVFR 100V 144A 0.011 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switchi

APT20M16B2FLL APT20M16LFLL 200V 100A 0.016W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with excepti

APT10M19BVFR APT10M19SVFR 100V 75A 0.019 BVFR POWER MOS V FREDFET D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. SV

APT30M19JVR 300V 130A 0.019 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche

APT30M17JFLL 300V 135A 0.017 R POWER MOS 7 FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses "UL Recognized" along with exceptiona

VDS 1700 V ID @ 25 C 5.3 A C2M1000170J RDS(on) 1.0 Silicon Carbide Power MOSFET TM C2M MOSFET Technology N-Channel Enhancement Mode Features Package TAB High blocking voltage with low RDS(on) Drain Easy to parallel and simple to drive Low parasitic inductance Separate driver source pin Ultra-low drain-gate capacitance Halogen Free, RoHS compli

VDS 1700 V ID @ 25 C 4.9 A C2M1000170D RDS(on) 1.0 Silicon Carbide Power MOSFET TM Z-FET MOSFET N-Channel Enhancement Mode Features Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Resistant to Latch-Up Halogen Free, RoHS Compliant Benefits TO-247-3 Higher System Effi

CAS100H12AM1 VDS 1.2 kV 1.2 kV, 100A Silicon Carbide RDS(on) (TJ = 25 C) 16 m Half-Bridge Module EOFF (TJ = 125 C) 1.8 mJ Z-FETTM MOSFET and Z-RecTM Diode Features Package Ultra Low Loss Zero Turn-off Tail Current from MOSFET Zero Reverse Recovery Current from Diode High-Frequency Operation Positive Temperature Coefficient on VF and VDS(on) AlSiC Base

VDS 1.2 kV CCS050M12CM2 1.2kV, 50A Silicon Carbide RDS(on) (TJ = 25 C) 25 m Six-Pack (Three Phase) Module EOFF (TJ = 150 C) 0.6 mJ Z-FETTM MOSFET and Z-RecTM Diode Features Package Ultra Low Loss Zero Reverse Recovery Current Zero Turn-off Tail Current High-Frequency Operation Positive Temperature Coefficient on VF and VDS(on) Cu Baseplate, AlN DBC Sy

Technische Information / technical information IGBT-Module BSM150GAL120DLC IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Vorl ufige Daten / preliminary data H chstzul ssige Werte / maximum rated values Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V collector-emit

Technische Information / Technical Information IGBT-Module BSM 100 GB 170 DLC IGBT-Modules H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 1700 V collector-emitter voltage TC = 80 C IC,nom. 100 A Kollektor-Dauergleichstrom DC-collector current TC = 25 C IC 200 A Periodischer Kollektor Spitzens

BSM 10 GD 120 DN2 IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 10 GD 120 DN2 1200V 15A ECONOPACK 2 C67076-A2513-A67 BSM 10 GD120DN2E3224 1200V 15A ECONOPACK 2K C67070-A2513-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1

Technische Information / Technical Information IGBT-Module BSM10GP60 IGBT-Modules Elektrische Eigenschaften / Electrical properties H chstzul ssige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische R ckw. Spitzensperrspannung VRRM 1600 V repetitive peak reverse voltage Durchla strom Grenzeffektivwert IFRMSM 40 A RMS forward current per chip Dauergl

Technische Information / Technical Information IGBT-Module BSM 150 GB 170 DLC IGBT-Modules H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 1700 V collector-emitter voltage TC = 80 C IC,nom. 150 A Kollektor-Dauergleichstrom DC-collector current TC = 25 C IC 300 A Periodischer Kollektor Spitzen

Technische Information / Technical Information IGBT-Module BSM 150 GB 60 DLC IGBT-Modules H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 600 V collector-emitter voltage Tc= 60 C IC,nom. 150 A Kollektor-Dauergleichstrom DC-collector current Tc= 25 C IC 180 A Periodischer Kollektor Spitzenstrom

BSM 100 GB 170 DN2 IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate RG on,min = 15 Ohm Type VCE IC Package Ordering Code BSM 100 GB 170 DN2 1700V 145A HALF-BRIDGE 2 C67070-A2703-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1700 V Collector-gate voltage VCGR RGE = 20 k 1700

Technische Information / Technical Information IGBT-Module BSM 150 GD 60 DLC IGBT-Modules H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 600 V collector-emitter voltage Tc= 55 C IC,nom. 150 A Kollektor-Dauergleichstrom DC-collector current Tc= 25 C IC 180 A Periodischer Kollektor Spitzenstrom

BSM 15 GD 120 DN2 IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 15 GD 120 DN2 1200V 25A ECONOPACK 2 C67076-A2504-A67 BSM 15 GD120DN2E3224 1200V 25A ECONOPACK 2K C67070-A2504-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1

BSM 150 GAL 120 DN2 IGBT Power Module Single switch with chopper diode at collector Including fast free-wheeling diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 150 GAL 120 DN2 1200V 210A HALF BRIDGE GAL 2 C67076-A2013-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE

BSM 150 GAR 120 DN2 IGBT Power Module Single switch with chopper diode at collector Including fast free-wheeling diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 150 GAR 120 DN2 1200V 210A HALF BRIDGE GAR 2 C67076-A2013-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE

BSM 10 GD 120 DN2 E3224 IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 10 GD 120 DN2 1200V 15A ECONOPACK 2 C67076-A2513-A67 BSM 10 GD120DN2E3224 1200V 15A ECONOPACK 2K C67070-A2513-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage

BSM 150 GB 170 DN2 IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate RG on,min = 10 Ohm Type VCE IC Package Ordering Code BSM 150 GB 170 DN2 1700V 220A HALF-BRIDGE 2 C67070-A2704-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1700 V Collector-gate voltage VCGR RGE = 20 k 1700

BSM 150 GB 120 DN2 IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 150 GB 120 DN2 1200V 210A HALF-BRIDGE 2 C67076-A2108-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE = 20 k 1200 Gate-emitter voltage VGE

Technische Information / Technical Information IGBT-Module BSM10GP120 IGBT-Modules Elektrische Eigenschaften / Electrical properties H chstzul ssige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische R ckw. Spitzensperrspannung VRRM 1600 V repetitive peak reverse voltage Durchla strom Grenzeffektivwert IFRMSM 40 A RMS forward current per chip Dauergl

Technische Information / Technical Information IGBT-Module BSM15GP120 IGBT-Modules Elektrische Eigenschaften / Electrical properties H chstzul ssige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische R ckw. Spitzensperrspannung VRRM 1600 V repetitive peak reverse voltage Durchla strom Grenzeffektivwert IFRMSM 40 A RMS forward current per chip Dauerg

BSM 100 GB 120 DN2 IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 100 GB 120 DN2 1200V 150A HALF-BRIDGE 2 C67076-A2107-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE = 20 k 1200 Gate-emitter voltage VGE

Technische Information / Technical Information IGBT-Module BSM15GP60 IGBT-Modules Elektrische Eigenschaften / Electrical properties H chstzul ssige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische R ckw. Spitzensperrspannung VRRM 1600 V repetitive peak reverse voltage Durchla strom Grenzeffektivwert IFRMSM 40 A RMS forward current per chip Dauergle

BSM 100 GAR 120 DN2 IGBT Power Module Single switch with chopper diode at collector Including fast free-wheeling diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 100 GAR 120 DN2 1200V 150A HALF BRIDGE GAR 2 C67076-A2012-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE

Technische Information / technical information IGBT-Module BSM100GB120DLCK IGBT-modules IGBT-Wechselrichter / IGBT-inverter H chstzul ssige Werte / maximum rated values Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V collector-emitter voltage Kollektor-Dauergleichstrom T = 80 C, T = 150 C I 100 A DC-collector current T = 25 C, T = 150 C I 205 A Periodischer Kollektor Spitzen

BSM 100 GB 120 DN2K IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 100 GB 120 DN2K 1200V 145A HALF-BRIDGE 1 C67070-A2107-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE = 20 k 1200 Gate-emitter voltage V

Technische Information / Technical Information IGBT-Module BSM 100 GB 60 DLC IGBT-Modules H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 600 V collector-emitter voltage Tc= 70 C IC,nom. 100 A Kollektor-Dauergleichstrom DC-collector current Tc= 25 C IC 130 A Periodischer Kollektor Spitzenstrom

BSM 100 GAL 120 DN2 IGBT Power Module Single switch with chopper diode at collector Including fast free-wheeling diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 100 GAL 120 DN2 1200V 150A HALF BRIDGE GAL 2 C67076-A2012-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE

Technische Information / Technical Information IGBT-Module BSM 100 GD 60 DLC IGBT-Modules H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 600 V collector-emitter voltage Tc= 65 C IC,nom. 100 A Kollektor-Dauergleichstrom DC-collector current Tc= 25 C IC 130 A Periodischer Kollektor Spitzenstrom

7MBR25VM120-50 IGBT Modules IGBT MODULE (V series) 1200V / 25A / PIM Features Low V (sat) CE Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25 C unless o

7MBR35VM120-50 IGBT Modules IGBT MODULE (V series) 1200V / 35A / PIM Features Low V (sat) CE Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25 C unless o

7MBR50VM120-50 IGBT Modules IGBT MODULE (V series) 1200V / 50A / PIM Features Low V (sat) CE Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor Drive AC and DC Servo Drive Amplifi er Uninterruptible Power Supply Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25 C unless

FRM130D, FRM130R, FRM130H 14A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package TO-204AA 14A, 100V, RDS(on) = 0.180 Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(Si)

FRM140D, FRM140R, FRM140H 23A, 100V, 0.130 Ohm, Rad Hard, June 1998 N-Channel Power MOSFETs Features Package 23A, 100V, RDS(on) = 0.130 TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(Si)

N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6661M1A VDSS = 90V , ID = 1.0A, RDS(ON) = 4.0 Fast Switching Low Threshold Voltage (Logic Level) Low CISS Integral Source-Drain Body Diode Hermetic Metal TO-257AA Package High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VDS Drain Source V

NORMALLY-OFF SILICON CARBIDE POWER JFET SML100M12MSF RDS(on)max of 0.150 High Temperature Operation Tj = 200 C Low Gate Charge and Intrinsic Capacitance Positive Temperature Coefficient and Temperature Independent Switching Behaviour APPLICATIONS UPS SMPS Induction Heating Motor Drive ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless othe

2N7224 SEME IRFM150 LAB MECHANICAL DATA Dimensions in mm (inches) N CHANNEL 13.59 (0.535) 6.32 (0.249) POWER MOSFET 13.84 (0.545) 6.60 (0.260) 3.53 (0.139) 1.02 (0.040) Dia. 3.78 (0.149) 1.27 (0.050) VDSS 100V ID(cont) 34A RDS(on) 0.070 1 2 3 FEATURES REPETITIVE AVALANCHE RATING ISOLATED AND HERMETICALLY SEALED ALTERNATIVE TO TO-3 PACKAGE 0.89 (0.035) 1.14 (0

IRFM1310ST MECHANICAL DATA Dimensions in mm (inches) N CHANNEL POWER MOSFET VDSS 100V ID(cont) 34A RDS(on) 0.070 FEATURES REPETITIVE AVALANCHE RATING ISOLATED AND HERMETICALLY SEALED EASE OF PARALLELING TO 254Z Package SIMPLE DRIVE REQUIREMENTS Pin 1 Drain Pin 2 Sou

SUM1960NE 0.32A , 60V , RDS(ON) 2 N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SOT-363 These miniature surface mount MOSFETs utilize a high A E cell density trench process to provide low RDS(on) and to L ensure minimal power loss and heat dissipation

TSM150P04LCS Taiwan Semiconductor P-Channel Power MOSFET -40V, -22A, 15m FEATURES KEY PERFORMANCE PARAMETERS Low RDS(ON) to minimize conductive losses PARAMETER VALUE UNIT Logic level VDS -40 V Low gate charge for fast power switching RDS(on) VGS = -10V 15 100% UIS and Rg tested m Compliant to RoHS directive 2011/65/EU and in (max) VGS = -4.5V

TSM10N60 600V N-Channel MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)( )(max) ID (A) 2. Drain 3. Source 600 0.75 @ VGS =10V 10 Features Block Diagram Advanced high dense cell design. High Power and Current handing capability. Application Power Supply. Lighting. Ordering Information Part No. Package Packing

TSM100N06 60V N-Channel Power MOSFET TO-220 Pin Definition PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Drain 3. Source 60 6.7 @ VGS =10V 100 Features Block Diagram Advanced Trench Technology Low RDS(ON) 6.7m (Max.) Low gate charge typical @ 81nC (Typ.) Low Crss typical @ 339pF (Typ.) Ordering Information Part No. Package Packing

TSM10N06 60V N-Channel MOSFET TO-252 Pin Definition PRODUCT SUMMARY 1. Gate (DPAK) VDS (V) RDSON (m ) ID (A) 2. Drain 3. Source 65 @ VGS = 10V 10 60 80 @ VGS = 5V 10 110 @ VGS = 4V 9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering In

TSM160N10 100V N-Channel Power MOSFET TO-220 Pin Definition PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Drain 3. Source 100 5.5 @ VGS =10V 160 Features Block Diagram Advanced Trench Technology Low RDS(ON) 5.5m (Max.) Low gate charge typical @ 154nC (Typ.) Low Crss typical @ 300pF (Typ.) Ordering Information Part No. Package Packing

TSM1NB60S 600V N-Channel Power MOSFET TO-92 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 600 10 @ VGS =10V 0.25 General Description The TSM1NB60S N-Channel Power MOSFET is produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching per

TSM1N80 800V N-Channel MOSFET TO-92 SOT-223 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 21.6 @ VGS =10V 0.15 800 General Description The TSM1N80 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to with

Preliminary TSM1N45D 450V N-Channel Power MOSFET SOP-8 PRODUCT SUMMARY Pin Definition 1. Source 1 8. Drain 1 VDS (V) RDS(on)( ) ID (A) 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 450 4.25 @ VGS =10V 0.25 4. Gate 2 5. Drain 2 General Description The TSM1N45 is N-Channel enhancement mode power field effect transistors are produced using planar DMOS technology process

TSM1N60S 600V N-Channel Power MOSFET TO-92 Pin Definition PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 600 11 @ VGS =10V 0.3 General Description The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand

TSM10N80 800V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 800 1.05 @ VGS =10V 9.5 General Description The TSM10N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, pr

TSM10P06 60V P-Channel MOSFET TO-252 Pin Definition PRODUCT SUMMARY 1. Gate (DPAK) 2. Drain VDS (V) RDSON (m ) ID (A) 3. Source 170 @ VGS = -10V -5 -60 220 @ VGS = -4.5V -2 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Pa

TSM1NB60 600V N-Channel Power MOSFET TO-251 TO-252 SOT-223 PRODUCT SUMMARY Pin Definition (IPAK) (DPAK) 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 600 10 @ VGS =10V 0.5 General Description The TSM1NB60 N-Channel Power MOSFET is produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, p

TSM1N60L 600V N-Channel Power MOSFET PRODUCT SUMMARY TO-252 TO-251 VDS (V) RDS(on)( ) ID (A) Pin Definition 1. Gate 600 12 @ VGS =10V 1 2. Drain 3. Source General Description The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withs

TSM190N08 75V N-Channel Power MOSFET TO-220 Pin Definition PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Drain 3. Source 75 4.2 @ VGS =10V 190 Features Block Diagram Advanced Trench Technology Low RDS(ON) 4.2m (Max.) Low gate charge typical @ 160nC (Typ.) Low Crss typical @ 300pF (Typ.) Ordering Information Part No. Package Packing

TSM1N45 450V N-Channel Power MOSFET TO-92 SOT-223 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 450 4.25 @ VGS =10V 0.25 General Description The TSM1N45 is N-Channel enhancement mode power field effect transistors are produced using planar DMOS technology process. This advanced technology has been especially tailored to minimize

TSM13N50 500V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 500 0.48 @ VGS =10V 13 General Description The TSM13N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, prov

TSM15N50 500V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 500 0.44 @ VGS =10V 14 General Description The TSM15N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, pro

TSM1N60L 600V N-Channel Power MOSFET TO-252 TO-251 Pin Definition PRODUCT SUMMARY 1. Gate 2. Drain VDS (V) RDS(on)( ) ID (A) 3. Source 600 12 @ VGS =10V 1 General Description The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to wit

TSM19N20 200V N-Channel Power MOSFET TO-252 Pin Definition PRODUCT SUMMARY 1. Gate (DPAK) VDS (V) RDS(on)(m ) ID (A) 2. Drain 3. Source 200 92 @ VGS =10V 18 Features Block Diagram Advanced Trench Technology Low RDS(ON) 92m (Max.) Low gate charge typical @ 55nC (Typ.) Low Crss typical @ 73pF (Typ.) Ordering Information Part No. Package Pa

TSM15N03PQ33 30V N-Channel Power MOSFET PDFN33 PRODUCT SUMMARY Pin Definition 1. Source 8. Drain VDS (V) RDS(on)(m ) ID (A) 2. Source 7. Drain 12 @ VGS =10V 7.8 3. Source 6. Drain 30 4. Gate 5. Drain 17 @ VGS =4.5V 7 Features Block Diagram Advanced Trench Technology Low On-Resistance Low gate charge typical @ 3.6nC (Typ.) Low Crss typical @

TSM1N60S 600V N-Channel Power MOSFET TO-92 Pin Definition PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 600 11 @ VGS =10V 0.3 General Description The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand

J0003A SERIES High speed switching Silicon P-channel MOSFET DESCRIPTION OUTLINE DRAWING (Unit mm) INJ0003A is a Silicon P-channel MOSFET. INJ0003AU1 This product is most suitable for low voltage 1.5 use such as portable machinery , because of 0.35 0.8 0.35 low voltage drive and low on resistance. JEITA SC-75A FEATURE JEDEC Input impedan

0002A SERIES High speed switching Silicon N-channel MOSFET DESCRIPTION OUTLINE DRAWING (Unit mm) INK0002A is a Silicon N-channel MOSFET. INK0002AU1 This product is most suitable for low voltage 1.5 use such as portable machinery , because of 0.35 0.8 0.35 low voltage drive and low on resistance. JEITA SC-75A FEATURE JEDEC Input imped

0010A SERIES High speed switching Silicon N-channel MOSFET DESCRIPTION OUTLINE DRAWING (Unit mm) INK0010A is a Silicon N-channel MOSFET. INK0010AU1 This product is most suitable for low voltage 1.5 use such as portable machinery , because of 0.35 0.8 0.35 low voltage drive and low on resistance. JEITA SC-75A FEATURE JEDEC Input imped

0003A SERIES High speed switching Silicon N-channel MOSFET DESCRIPTION OUTLINE DRAWING (Unit mm) INK0003A is a Silicon N-channel MOSFET. INK0003AU1 This product is most suitable for low voltage 1.5 use such as portable machinery , because of 0.35 0.8 0.35 low voltage drive and low on resistance. JEITA SC-75A FEATURE JEDEC Input imped

J0001A SERIES High speed switching Silicon P-channel MOSFET DESCRIPTION OUTLINE DRAWING (Unit mm) INJ0001A is a Silicon P-channel MOSFET. INJ0001AU1 This product is most suitable for low voltage 1.5 use such as portable machinery , because of 0.35 0.8 0.35 low voltage drive and low on resistance. JEITA SC-75A FEATURE JEDEC Input impedan

SMALL-SIGNAL TRANSISTOR ISA1235AC1 ISA1602AM1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING UNIT mm DESCRIPTION ISA1235AC1 ISA1602AM1 is super mini ISA1235AC1 ISA1602AM1 package resin sealed silicon PNP epitaxial type transistor. 2.1 2.8 These are designed for low frequency voltage 0.425 1.25 0.425 1.5 0.65 0.65 amplify applicati

ISA2188AM1 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE Unit mm OUTLINE DRAWING DESCRIPTION 2.1 ISA2188AM1 is a silicon PNP epitaxial type transistor 0.425 1.25 0.425 Designed with high collector current, low VCE(sat). FEATURE High collector current IC MAX =-650mA Low collector to emitter saturation voltage VCE

0001A SERIES High speed switching Silicon N-channel MOSFET DESCRIPTION OUTLINE DRAWING (Unit mm) INK0001A is a Silicon N-channel MOSFET. INK0001AU1 This product is most suitable for low voltage 1.5 use such as portable machinery , because of 0.35 0.8 0.35 low voltage drive and low on resistance. JEITA SC-75A FEATURE JEDEC Input imped

0012A SERIES High speed switching Silicon N-channel MOSFET DESCRIPTION OUTLINE DRAWING (Unit mm) INK0012A is a Silicon N-channel MOSFET. INK0012AU1 This product is most suitable for low voltage 1.5 use such as portable machinery , because of 0.35 0.8 0.35 low voltage drive and low on resistance. JEITA SC-75A FEATURE JEDEC Input imped

INK0112AX SERIES High speed switching Silicon N-channel MOSFET DESCRIPTION OUTLINE DRAWING (Unit mm) INK0112A is a Silicon N-channel MOSFET. This product is most suitable for low voltage INK0112AU1 use such as portable machinery , because of low 1.5 voltage drive and low on resistance. 0.35 0.8 0.35 FEATURE Input impedance is high, and not necessary to JEIT

0001B SERIES High speed switching Silicon N-channel MOSFET DESCRIPTION OUTLINE DRAWING (Unit mm) INK0001B is a Silicon N-channel MOSFET. INK0001BU1 This product is most suitable for low voltage 1.5 use such as portable machinery , because of 0.35 0.8 0.35 low voltage drive and low on resistance. JEITA SC-75A FEATURE JEDEC Input imped

J0002A SERIES High speed switching Silicon P-channel MOSFET DESCRIPTION OUTLINE DRAWING (Unit mm) INJ0002A is a Silicon P-channel MOSFET. INJ0002AU1 This product is most suitable for low voltage 1.5 use such as portable machinery , because of 0.35 0.8 0.35 low voltage drive and low on resistance. JEITA SC-75A FEATURE JEDEC Input impedan

J0011A SERIES High speed switching Silicon P-channel MOSFET DESCRIPTION OUTLINE DRAWING (Unit mm) INJ0011A is a Silicon P-channel MOSFET. INJ0011AU1 This product is most suitable for low voltage 1.5 use such as portable machinery , because of 0.35 0.8 0.35 low voltage drive and low on resistance. JEITA SC-75A FEATURE JEDEC Input impedan

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFNWB2*2-6L-J Plastic-Encapsulate MOSFETS CJM1206 P-Channel Power MOSFET DFNWB2*2-6L-J ID V(BR)DSS RDS(on)MAX m @-4.5V 45 1. DRAIN 2. DRAIN -12V 60 m -6A @-2.5V 3. GATE m @-1.8V 90 4. SOURCE 5. DRAIN 6. DRAIN DESCRIPTION The CJM1206 uses advanced trench technology to provide excellent RDS(on) , low gate

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB2*2-6L-J Plastic-Encapsulate MOSFETS CJM1216 P-Channel Power MOSFET DFNWB2 2-6L-J ID V(BR)DSS RDS(on)MAX 21m @-4.5V 1. DRAIN -12 -16A V 27m @-2.5V 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN DESCRIPTION The CJM1216 uses advanced trench technology to provide excellent RDS(on) , low gate charge and

APTM120DA30CT1G VDSS = 1200V Boost chopper RDSon = 300m typ @ Tj = 25 C MOSFET + SiC chopper diode ID = 31A @ Tc = 25 C Power Module Application 5 6 11 AC and DC motor control Switched Mode Power Supplies Power Factor Correction CR1 Features 3 NTC Power MOS 8 MOSFET 4 - Low RDSon Q2 - Low input and Miller capacitance - Low gate charge

APT8M100B APT8M100S 1000V, 8A, 1.80 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of

APT20M120JCU3 VDSS = 1200V ISOTOP Buck chopper RDSon = 560m typ @ Tj = 25 C MOSFET + SiC chopper diode ID = 20A @ Tc = 25 C Power module Application D AC and DC motor control Switched Mode Power Supplies Features Power MOS 8 MOSFET G - Low RDSon S - Low input and Miller capacitance - Low gate charge - Avalanche energy rated SiC Schott

APT19M120J 1200V, 19A, 0.53 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of the poly-silicon

APT7M120B APT7M120S 1200V, 8A, 2.1 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of t

APT24M120B2 APT24M120L 1200V, 24A, 0.63 Max N-Channel MOSFET T-Ma xTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and

APTM100UM65SCAVG VDSS = 1000V Single switch RDSon = 65m typ @ Tj = 25 C Series & SiC parallel diodes ID = 145A @ Tc = 25 C MOSFET Power Module D Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control DK Features Power MOS 7 MOSFETs - Low RDSon G - Low input and Miller capacitance - Low g

APT31M100B2 APT31M100L 1000V, 32A, 0.38 Max N-Channel MOSFET T-Ma xTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and

APT26M100JCU3 VDSS = 1000V ISOTOP Buck chopper RDSon = 330m typ @ Tj = 25 C MOSFET + SiC chopper diode ID = 26A @ Tc = 25 C Power module Application D AC and DC motor control Switched Mode Power Supplies Features Power MOS 8 MOSFET G - Low RDSon S - Low input and Miller capacitance - Low gate charge - Avalanche energy rated SiC Schott

APTM100DA18CT1G VDSS = 1000V Boost chopper RDSon = 180m typ @ Tj = 25 C MOSFET + SiC chopper diode ID = 40A @ Tc = 25 C Power Module Application 5 6 11 AC and DC motor control Switched Mode Power Supplies Power Factor Correction CR1 Features Power MOS 8 MOSFETs 3 NTC - Low RDSon 4 Q2 - Low input and Miller capacitance - Low gate charge

APT14M120B APT14M120S 1200V, 14A, 1.10 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance

APT17M120JCU3 VDSS = 1200V ISOTOP Buck chopper RDSon = 680m typ @ Tj = 25 C MOSFET + SiC chopper diode ID = 17A @ Tc = 25 C Power module Application D AC and DC motor control Switched Mode Power Supplies Features Power MOS 8 MOSFET G - Low RDSon S - Low input and Miller capacitance - Low gate charge - Avalanche energy rated SiC Schott

APT26M100JCU2 VDSS = 1000V ISOTOP Boost chopper RDSon = 330m typ @ Tj = 25 C MOSFET + SiC chopper diode ID = 26A @ Tc = 25 C Power module Application K AC and DC motor control Switched Mode Power Supplies Power Factor Correction D Brake switch Features Power MOS 8 MOSFET G - Low RDSon - Low input and Miller capacitance - Low gat

APT22M100JCU2 VDSS = 1000V ISOTOP Boost chopper RDSon = 400m typ @ Tj = 25 C MOSFET + SiC chopper diode ID = 22A @ Tc = 25 C Power module Application K AC and DC motor control Switched Mode Power Supplies Power Factor Correction D Brake switch Features Power MOS 8 MOSFET G - Low RDSon - Low input and Miller capacitance - Low gat

APTM100A23SCTG VDSS = 1000V Phase leg RDSon = 230m typ @ Tj = 25 C Series & SiC parallel diodes ID = 36A @ Tc = 25 C MOSFET Power Module Application Motor control Switched Mode Power Supplies NTC2 Uninterruptible Power Supplies VBUS Features Q1 Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance G1 OUT - Low gate charge -

APT22M100JCU3 VDSS = 1000V ISOTOP Buck chopper RDSon = 400m typ @ Tj = 25 C MOSFET + SiC chopper diode ID = 22A @ Tc = 25 C Power module Application D AC and DC motor control Switched Mode Power Supplies Features Power MOS 8 MOSFET G - Low RDSon S - Low input and Miller capacitance - Low gate charge - Avalanche energy rated SiC Schott

APT37M100B2 APT37M100L 1000V, 37A, 0.33 Max N-Channel MOSFET T-Ma xTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and

APTC60DAM18CTG Boost chopper VDSS = 600V SiC FWD diode RDSon = 18m max @ Tj = 25 C Super Junction ID = 143A @ Tc = 25 C MOSFET Power Module Application AC and DC motor control VBUS NTC2 Switched Mode Power Supplies VBUS SENSE Power Factor Correction CR1 Features - Ultra low RDSon OUT - Low Miller capacitance Q2 - Ultra low gate charge -

APTM120U10SCAVG VDSS = 1200V Single switch RDSon = 100m typ @ Tj = 25 C Series & SiC parallel diodes ID = 116A @ Tc = 25 C MOSFET Power Module D Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control DK Features Power MOS 7 MOSFETs - Low RDSon G - Low input and Miller capacitance - Low

APT21M100J 1000V, 21A, 0.38 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of the poly-silicon

APT28M120B2 APT28M120L 1200V, 29A, 0.53 Max N-Channel MOSFET T-Ma xTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and

APT17M120JCU2 VDSS = 1200V ISOTOP Boost chopper RDSon = 680m typ @ Tj = 25 C MOSFET + SiC chopper diode ID = 17A @ Tc = 25 C Power module Application K AC and DC motor control Switched Mode Power Supplies Power Factor Correction D Brake switch Features Power MOS 8 MOSFET G - Low RDSon - Low input and Miller capacitance - Low gat

APT45M100J 1000V, 45A, 0.18 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of the poly-silicon

APT9M100B APT9M100S 1000V, 9A, 1.40 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of

APT14M100B APT14M100S 1000V, 14A, 0.88 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance

APT25M100J 1000V, 25A, 0.33 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of the poly-silicon

APT20M120JCU2 VDSS = 1200V ISOTOP Boost chopper RDSon = 560m typ @ Tj = 25 C MOSFET + SiC chopper diode ID = 20A @ Tc = 25 C Power module Application K AC and DC motor control Switched Mode Power Supplies Power Factor Correction D Brake switch Features Power MOS 8 MOSFET G - Low RDSon - Low input and Miller capacitance - Low gat

APT18M100B APT18M100S 1000V, 18A, 0.70 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance

APT4M120K 1200V, 5A, 3.80 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. TO-220 A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of the poly-si

APTM100H45SCTG Full bridge VDSS = 1000V RDSon = 450m typ @ Tj = 25 C Series & SiC parallel diodes ID = 18A @ Tc = 25 C MOSFET Power Module Application Motor control VBUS Switched Mode Power Supplies Uninterruptible Power Supplies CR1A CR3A Features CR1B CR3B Power MOS 7 MOSFETs Q1 Q3 - Low RDSon G1 G3 - Low input and Miller capacitance OUT

APTM100A13SCG VDSS = 1000V Phase leg RDSon = 130m typ @ Tj = 25 C Series & SiC parallel diodes ID = 65A @ Tc = 25 C MOSFET Power Module Application Motor control VBUS Switched Mode Power Supplies Uninterruptible Power Supplies Q1 Features G1 Power MOS 7 MOSFETs OUT - Low RDSon S1 - Low input and Miller capacitance - Low gate charge Q2

APTC60AM18SCG Phase leg VDSS = 600V Series & SiC parallel diodes RDSon = 18m max @ Tj = 25 C Super Junction ID = 143A @ Tc = 25 C MOSFET Power Module Application VBUS Motor control Switched Mode Power Supplies Uninterruptible Power Supplies Q1 Features G1 OUT S1 - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge Q2 -

APT6M100K 1000V, 6A, 2.50 MAX N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of the poly-silicon ga

01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail mail@electrum-av.com, www.electrum-av.com 2 1. ...

01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail mail@electrum-av.com, www.electrum-av.com 2 1. ...

01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail mail@electrum-av.com, www.electrum-av.com 2 1. ...

01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail mail@electrum-av.com, www.electrum-av.com 2 1. ...

01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail mail@electrum-av.com, www.electrum-av.com 2 1. ...

01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail mail@electrum-av.com, www.electrum-av.com 2 1. ...

01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail mail@electrum-av.com, www.electrum-av.com 2 1. ...

01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail mail@electrum-av.com, www.electrum-av.com 2 1. ...

01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail mail@electrum-av.com, www.electrum-av.com 2 1. ...

01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail mail@electrum-av.com, www.electrum-av.com 2 1. ...

01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail mail@electrum-av.com, www.electrum-av.com 2 1. ...

01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail mail@electrum-av.com, www.electrum-av.com 2 1. ...

01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail mail@electrum-av.com, www.electrum-av.com 2 1. ...

01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail mail@electrum-av.com, www.electrum-av.com 2 1. ...

01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail mail@electrum-av.com, www.electrum-av.com 2 1. ...

01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail mail@electrum-av.com, www.electrum-av.com 2 1. ...

01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail mail@electrum-av.com, www.electrum-av.com 2 1. ...

06.02.14 13C-30-6(12).doc " " 13C-30-6(12) 13C , - IGBT- FRD (

01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail mail@electrum-av.com, www.electrum-av.com 2 1. ...

01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail mail@electrum-av.com, www.electrum-av.com 2 1. ...

01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail mail@electrum-av.com, www.electrum-av.com 2 1. ...

01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail mail@electrum-av.com, www.electrum-av.com 2 1. ...

06.02.14 13C-30-6(12).doc " " 13C-30-6(12) 13C , - IGBT- FRD (

01.01.2013 " " IGBT 13, 13, 13 302020 . , , 5 . (4862) 44-03-44, (4862) 47-02-12, e-mail mail@electrum-av.com, www.electrum-av.com 2 1. ...

CEM1010 Single N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 9.5A, RDS(ON) = 15.5m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D D D D Surface mount Package. 8 7 6 5 SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise not

CEM1010 Single N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 9.5A, RDS(ON) = 15.5m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D D D D Surface mount Package. 8 7 6 5 SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise not

WTM1624 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Description The WTM1624 applies to voltage regulators, SOT-89 relay drivers,lamp drivers,and electrical equipment. Features Adoption of FBET, MBIT processes Low collector-to-emitter saturation voltage Fast switching speed Large current capacity and wide ASO Absolute Maximum Ratings a

WTM1797 PNP EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 FEATURES 2 3 * Low saturation voltage * Excellent DC current gain characteristics SOT-89 * Complements to 2SC4672 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Units Value Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage

WTM1766 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Units Value 40 Collector-Base Voltage VCBO V Collector-Emitter Voltage VCEO 32 V 5.0 Emitter-Base Voltage VEBO V Collector Current -Continuous IC 2.0 A Collector Power dissipation PC mW 500 Junction Temper

WPM1485 WPM1485 Single P-Channel, -12V, -7.4A, Power MOSFET Http// www.willsemi.com V (V) Rds(on) ( ) DS 0.016@ V =-4.5V GS -12 0.022@ V =-2.5V GS 0.032@ V =-1.8V GS DFN2 2-6L Descriptions D D S 6 5 4 The WPM1485 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench D technology and design to provide excellent R DS (ON) S with low

WPM1480 WPM1480 Http //www.sh-willsemi.com Single P-Channel, -20 V, -1.5 A,Power Mosfet Description 3 The WPM1480 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is 1 suitable for use in DC-DC conversion applications. Standard 2 Product WPM1480 is Pb-free. SC-70/SOT-323 Features V R Typ (BR)DSS DS(on) 20

WPM1483 WPM1483 Single P-Channel, -12V, -3.5A, Power MOSFET Http// www. sh-willsemi.com VDS (V) Typical Rds(on) ( ) 0.031@ VGS= 4.5V -12 0.040@ VGS= 2.5V 0.056@ VGS= 1.8V SOT-23 Descriptions The WPM1483 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable f

WPM1481 WPM1481 Single P-Channel, -12V, -5.1A, Power MOSFET Http //www.sh-willsemi.com V (V) Typical Rds(on) ( ) I (A) DS D 0.024@ V = - 4.5V -5.5 GS -12 0.032@ V = - 2.5V -4.0 GS 0.047@ V = - 1.8V -2.5 GS DFN2*2-6L Descriptions D D S 6 5 4 The WPM1481 is P-Channel enhancement MOS D Field Effect Transistor. Uses advanced trench technology and design to provi

WNM12N65/WNM12N65F WNM12N65/WNM12N65F 650V N-Channel MOSFET Description Features C The WNM12N65/WNM12N65F is N-Channel 650V@TJ=25 enhancement MOS Field Effect Transistor. Uses Typ.RDS(on)=0.57 advanced high voltage MOSFET Process and Low gate charge design to provide excellent RDS (ON) with low gate 100% avalanche tested charge. This device is suitable for use in p

WPM1488 WPM1488 Single P-Channel, -12V, -1.4A, Power MOSFET www.sh-willsemi.com VDS (V) Typical Rds(on) ( ) ID (A) 0.080@ VGS= 4.5V -1.2 -12 0.086@ VGS= 3.6V -1.0 0.105@ VGS= 2.5V -1.0 SOT-323 Descriptions The WPM1488 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This de

Spec. No. HM200102 HI-SINCERITY Issued Date 2001.07.30 Revised Date 2007.03.02 MICROELECTRONICS CORP. Page No. 1/5 HM112 NPN EPITAXIAL PLANAR TRANSISTOR SOT-89 Description The HM112 is designed for use in general purpose amplifier and low-speed switching Darlington Schematic C applications. Absolute Maximum Ratings (T =25 C) A B Maximum Temperatures

Spec. No. HM200101 HI-SINCERITY Issued Date 2001.07.30 Revised Date 2007.03.02 MICROELECTRONICS CORP. Page No. 1/5 HM117 PNP EPITAXIAL PLANAR TRANSISTOR SOT-89 Description The HM117 is designed for use in general purpose amplifier and low-speed switching Darlington Schematic C applications. Absolute Maximum Ratings (T =25 C) A B Maximum Temperatures

AOTF15B65M1 TM 650V, 15A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT( IGBT) technology 650V 650V breakdown voltage IC (TC=100 15A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.7V C) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficien

AOK20B65M1/AOT20B65M1/AOB20B65M1 650V, 20A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest Alpha IGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 20A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.7V High efficient turn-on di/dt controllability Low VCE(sat) enab

AOT15B65M1/AOB15B65M1 TM 650V, 15A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 15A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.7V High efficient turn-on di/dt controllability Low VCE(SAT) enables high eff

AOT10B65M1/AOB10B65M1 TM 650V, 10A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 10A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.6V C) High efficient turn-on di/dt controllability Low VCE(SAT) enables high

AOK20B65M1/AOT20B65M1/AOB20B65M1 TM 650V, 20A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest Alpha IGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 20A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.7V High efficient turn-on di/dt controllability Low VCE(sat) enab

AOT5B65M1/AOB5B65M1 TM 650V, 5A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 5A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.57V High efficient turn-on di/dt controllability Low VCE(SAT) enables high eff

AOTF5B65M1 TM 650V, 5A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 5A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.57V C) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficienci

AOTF10B65M1 TM 650V, 10A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 10A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.6V C) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencie

AOT10B60M1 TM 600V,10A Alpha IGBT With Soft and Fast Recovery Anti-Parallel Diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 600V 600V breakdown voltage IC (TC=100 10A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 2.3V C) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencie

AOT5B65M1/AOB5B65M1 TM 650V, 5A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 5A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.57V High efficient turn-on di/dt controllability Low VCE(SAT) enables high eff

AOK40B120M1 TM 1200V, 40A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest Alpha IGBT ( IGBT) technology 1200V 1200V breakdown voltage IC (TC=100 C) 40A Fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.95V High efficient turn-on di/dt controllability High switching speed Low turn-o

AOK20B65M1/AOT20B65M1/AOB20B65M1 TM 650V, 20A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest Alpha IGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 20A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.7V High efficient turn-on di/dt controllability Low VCE(sat) enab

AOD5B65M1E TM 650V, 5A AlphaIGBT With Soft and Fast Recovery Anti-Parallel Diode General Description Product Summary VCE Very fast and soft recovery freewheeling diode 650V High efficient turn-on di/dt controllability IC (TC=100 C) 5A Low VCE(sat) for low conduction losses VCE(sat) (TJ=25 C) 2.15V Soft switching performance and low EMI High electrostatic perfor

AOD5B65M1 TM 650V, 5A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 5A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.57V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencies

AOT15B65M1/AOB15B65M1 TM 650V, 15A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 15A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.7V High efficient turn-on di/dt controllability Low VCE(SAT) enables high eff

AOD5B65M1H TM 650V, 5A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 5A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.57V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencies

AOT10B65M1/AOB10B65M1 TM 650V, 10A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 10A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.6V C) High efficient turn-on di/dt controllability Low VCE(SAT) enables high

AOD6B60M1 TM 600V, 6A AlphaIGBT With Soft and Fast Recovery Anti-Parallel Diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) Technology 600V 600V Breakdown Voltage IC (TC=100 C) 6A Very Fast and Soft Recovery Freewheeling Diode VCE(sat) (TJ=25 C) 1.7V High Efficient Turn-On di/dt Controllability Low VCE(sat) Enables High Efficiencies L

AOT15B65M1/AOB15B65M1 TM 650V, 15A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 15A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.7V High efficient turn-on di/dt controllability Low VCE(SAT) enables high eff

AOTF20B65M1 TM 650V, 20A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 20A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.7V C) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencie

Analog Power AM1360NE N-Channel 60V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC VDS (V) rDS(on) ( ) ID (A) converters and power management in portable and 3 @ VGS = 10 V 0.3 battery-powered products such as

Analog Power AM1432NE N-Channel 30V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ( ) ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.033 @ VGS = 10 V 5.7 battery-powered products su

Analog Power AM1323P P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 150 @ VGS = -4.5V -1.3 Low thermal impedance -20 190 @ VGS = -2.5V -1.1 Fast switching speed Typical Applications SC70-3 Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLE

Analog Power AM10P10-530D P-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 530 @ VGS = -10V -6.9 Low thermal impedance -100 720 @ VGS = -4.5V -6.0 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLU

Analog Power AM1936NE N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 90 @ VGS = 10V 1.5 Low thermal impedance 30 130 @ VGS = 4.5V 1.3 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

Analog Power AM1370N N-Channel 180-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 1500 @ VGS = 10V 0.39 Low thermal impedance 180 1600 @ VGS = 4.5V 0.38 Fast switching speed Typical Applications SC70-3 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits

Analog Power AM10P15-550D P-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 550 @ VGS = -10V -7.8 Low thermal impedance -150 650 @ VGS = -5.5V -7.2 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLU

Analog Power AM1523CE PRODUCT SUMMARY N & P-Channel 20-V (D-S) MOSFET rDS(on) (m ) VDS (V) ID(A) 90 @ VGS = 4.5V 1.5 20 120 @ VGS = 2.5V 1.3 Key Features Key Features 200 @ VGS = -4.5V -1.0 Low r trench technology Low r trench technology DS(on) DS(on) -20 370 @ VGS = -2.5V -0.5 Low thermal impedance Low thermal impedance Fast switching speed

Analog Power AM1320N N-Channel 20V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ( )ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.058 @ VGS = 4.5 V 2.0 battery-powered products suc

Analog Power AM110P06-06B P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 6 @ VGS = -10V Low thermal impedance -60 -90 7 @ VGS = -4.5V Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM R

Analog Power AM1340N N-Channel 40V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ( )ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.086 @ VGS = 10 V 1.7 battery-powered products such

Analog Power AM10P20-690D P-Channel 200-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 900 @ VGS = -10V -6.0 Low thermal impedance -200 950 @ VGS = -5.5V -5.9 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOL

Analog Power AM1541CE These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ( ) ID (A) dissipation. Typical applications are DC-DC 140 @ V = 10V 1.2 GS converters and power management in portable and 40 battery-powered products such as computers, 190 @

Analog Power AM10N30-600I N-Channel 300-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) (m ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 600 @ VGS = 10V 7.5 converters and power management in portable and 300 900 @ VGS = 5.5V 6.1

Analog Power AM12N65PCFM N-Channel 650-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 800 @ VGS = 10V 7 Low thermal impedance 650 850 @ VGS = 6V 6.5 Fast switching speed Typical Applications Power Supplies Motor Drives Consumer Electronics ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTH

Analog Power AM1321P P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A) dissipation. Typical applications are DC-DC 0.079 @ VGS = -4.5V -1.7 converters and power management in portable and -20 battery-powered produc

Analog Power AM10P10-530I P-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 530 @ VGS = -10V -7.9 Low thermal impedance -100 720 @ VGS = -4.5V -6.8 Fast switching speed Typical Applications TO-251 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuit

Analog Power AM110N06-08P N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 8 @ VGS = 10V Low thermal impedance 60 110a 13 @ VGS = 4.5V Fast switching speed Typical Applications White LED boost converters Automotive Systems DRAIN connected Industrial DC/DC Conversion Circuits

Analog Power AM1433PE P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A) dissipation. Typical applications are DC-DC 0.064 @ VGS = -10V -4.1 converters and power management in portable and -30 battery-powered produc

Analog Power AM1421P P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A) dissipation. Typical applications are DC-DC 0.079 @ VGS = -4.5V -3.7 converters and power management in portable and -20 battery-powered produc

Analog Power AM12N65P N-Channel 650-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 800 @ VGS = 10V Low thermal impedance 650 12a 850 @ VGS = 6V Fast switching speed Typical Applications White LED boost converters Automotive Systems DRAIN connected Industrial DC/DC Conversion Circuits

Analog Power AM1400NE N-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 1100 @ VGS = 10V 1 Low thermal impedance 150 1200 @ VGS = 4.5V 0.9 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI

Analog Power AM1922NE N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) (m ) ID (A) rDS(on) and to ensure minimal power loss and heat 88 @ VGS = 4.5V 1.6 dissipation. Typical applications are DC-DC 20 converters and power management in portable and 120 @ VGS = 2.5V 1.3 batt

Analog Power AM1331P P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A) dissipation. Typical applications are DC-DC 0.112 @ VG = -10V -1.5 converters and power management in portable and S -30 battery-powered produ

Analog Power AM1561CE PRODUCT SUMMARY N & P-Channel 60-V (D-S) MOSFET rDS(on) (m ) VDS (V) ID (A) 250 @ VGS = 10V 0.9 60 330 @ VGS = 4.5V 0.8 Key Features Key Features 700 @ VGS = -10V -0.6 Low r trench technology Low r trench technology DS(on) DS(on) -60 800 @ VGS = -4.5V -0.5 Low thermal impedance Low thermal impedance Fast switching speed

Analog Power AM1580CE PRODUCT SUMMARY N & P-Channel 80-V (D-S) MOSFET rDS(on) (m ) VDS (V) ID (A) 740 @ VGS = 10V 0.52 80 810 @ VGS = 4.5V 0.50 Key Features 3300 @ VGS = -10V -0.25 Low r trench technology DS(on) -80 3400 @ VGS = -4.5V -0.24 Low thermal impedance Fast switching speed SC70-6 Typical Applications LED Inverter Circuits DC/DC Conver

Analog Power AM1925PE P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 160 @ VGS = -4.5V -1.2 Low thermal impedance -20 210 @ VGS = -2.5V -1.1 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MA

Analog Power AM1960NE Dual N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) ( ) VDS (V) ID (A) Low r trench technology DS(on) 2 @ VGS = 10V 0.32 Low thermal impedance 60 3 @ VGS = 4.5V 0.26 Fast switching speed Typical Applications DC/DC Conversion Circuits Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)

Analog Power AM1330N N-Channel 30V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ( )ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.058 @ VGS = 10 V 2.0 battery-powered products such

Analog Power AM1430N N-Channel 30V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ( )ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.058 @ VGS = 10 V 4.3 battery-powered products such

Analog Power AM1590CE PRODUCT SUMMARY N & P-Channel 100-V (D-S) MOSFET rDS(on) ( ) VDS (V) ID (A) 1.2 @ VGS = 10V 0.42 100 1.5 @ VGS = 4.5V 0.37 Key Features 5.5 @ VGS = -10V -0.20 Low r trench technology DS(on) -100 6 @ VGS = -4.5V -0.19 Low thermal impedance Fast switching speed SC70-6 Typical Applications LED Inverter Circuits DC/DC Conversi

Analog Power AM1963PE Dual P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 700 @ VGS = -10V -0.57 Low thermal impedance -60 860 @ VGS = -4.5V -0.52 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSO

Analog Power AM1420N N-Channel 20V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ( )ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.058 @ VGS = 4.5 V 4.3 battery-powered products suc

Analog Power AM1440N N-Channel 40V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ( )ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.086 @ VGS = 10 V 3.5 battery-powered products such

Analog Power AM1434N N-Channel 30V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ( ) ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.035 @ VGS = 4.5 V 5.5 battery-powered products su

Analog Power AM1431P P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A) dissipation. Typical applications are DC-DC 0.112 @ VGS = -10V -3.1 converters and power management in portable and -30 battery-powered product

Analog Power AM1535CE These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ( ) ID (A) dissipation. Typical applications are DC-DC 0.09 @ V = 4.5V 1.5 GS converters and power management in portable and 30 battery-powered products such as computers, 0.18

Analog Power AM110P08-11B P-Channel 80-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 11.2 @ VGS = -10V Low thermal impedance -80 -110a 14.5 @ VGS = -5.5V Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE

Analog Power AM10P20-1400D P-Channel 200-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 1400 @ VGS = -10V -4.9 Low thermal impedance -200 1600 @ VGS = -5.5V -4.6 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits AB

Analog Power AM1537CE PRODUCT SUMMARY N & P-Channel 30-V (D-S) MOSFET rDS(on) (m ) VDS (V) ID (A) 90 @ VGS = 10V 1.5 30 130 @ VGS = 4.5V 1.2 Key Features 190 @ VGS = -10V 1.0 Low r trench technology DS(on) -30 290 @ VGS = -4.5V 0.8 Low thermal impedance Fast switching speed SC70-6 Typical Applications DC/DC Conversion Power Routing Moto

PNP HIGH VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR R BM1P40A APPLICATIONS Electronic ballasts High frequency power transform Commonly power amplifier circuit FEATURES Medium voltage capability

Gr P Pr P P STM121N a S mHop Microelectronics C orp. Ver 1.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 155 @ VGS=10V Suface Mount Package. 100V 2.8A 192 @ VGS=4.5V 5 4 D2 G 2 6 D2 3 S 2 D1 7 2 G 1 SO-8 8 1 D1 S 1 1 (TA=25 C unless other

Green Product STM105N a S mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 100V 6A 31 @ VGS=10V Suface Mount Package. SO-8 1 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Symbol Parameter Units Limit VDS Drai

Gr P Pr P P STM122N a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 100 @ VGS=10V Suface Mount Package. 100V 3.4A 125 @ VGS=4.5V D2 5 4 G 2 6 D2 3 S 2 D1 7 2 G 1 SO-8 D1 8 1 S 1 1 (TA=25 C unless othe

Green Product STM101N a S mHop Microelectronics C orp. Ver1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Typ VDSS ID Rugged and reliable. 170 @ VGS=10V Suface Mount Package. 100V 3A 260 @ VGS=4.5V S O-8 1 C (TA=25 unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol Parameter

G P P STM102D a S mHop Microelectronics C orp. Ver 1.0 Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel) RDS(ON) (m ) Max RDS(ON) (m ) Max VDSS ID VDSS ID 216 @ VGS=10V 547 @ VGS=-10V 100V 2.0A -100V -1.3A 328 @ VGS=4.5V 614 @ VGS=-4.5V D2 5 4 G 2 6 D2 3 S 2 D1 7 2 G 1 SO-8 D1 8 1 S 1 1 (TC=25 C unl

SSFM1022 Main Product Characteristics VDSS 100V SSFT3906 SSFT3906 SSFM1022 SSFM1022 RDS(on) 19mohm ID 40A Marking and pin Schematic diagram Features and Benefits TO220 Assignment Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching a

SEMICONDUCTOR 48.5 25 25 C2E1 E2 C1 3-M6 93+0.3 4- 6.5 108+0.5 14 14 14 2.8 4-0.5 All dimensions in millimeters 27 15 17.8 48+0.3 62.5+0.5 G1 E1 E2 G2 30.9 30.5 22.5 SEMICONDUCTOR RoHS RoHS SEMICONDUCTOR SEMICONDUCTOR SEMICONDUCTOR SEMICONDUCTOR

RoHS NSGM100GB Series RoHS SEMICONDUCTOR IGBT Module (2 in one-package), 100A Features 1. High frequency operation 2. Low losses and soft switching 3. Isolated baseplate for easy heat sinking 4. Discrete super-fast recovery free-wheel diode 5. Small temperature dependence of the turn-off switching loss 40+0.5 3-M5.0 Typical Applications 23+0.5 23+0.5 AC Motor Control DC Motor

SM1C02NSU N-Channel Enhancement Mode MOSFET Features Pin Description 120V/50A, D RDS(ON)= 22m (max.) @ VGS= 10V S Reliable and Rugged G Lead Free and Green Devices Available (RoHS Compliant) Top View of TO-252-3 D (2) Applications G (1) Power Management in TV Converter. DC-DC Converter. S (3) N-Channel MOSFET Ordering and Marking Information Package Code SM1C02NS

SM1C02NSF N-Channel Enhancement Mode MOSFET Features Pin Description 120V/50A, RDS(ON)= 22m (max.) @ VGS= 10V Reliable and Rugged S Lead Free and Green Devices Available D G (RoHS Compliant) Top View of TO-220 D (2) Applications High Efficiency Synchronous Rectification in G (1) SMPS. Uninterruptible Power Supply. Hard Switched and High Frequency Circui

SM1A40CSQ Dual Enhancement Mode MOSFET (N-and P-Channel) Features Pin Description N Channel 100V/2.3A, D2 D1D2 D1 RDS(ON) = 162m (max.) @ VGS = 10V G2 RDS(ON) = 182m (max.) @ VGS = 4.5V S2 S1G1 RDS(ON) = 203m (max.) @ VGS = 4.0V P Channel Top View of DFN3x3C-8 -100V/-1.6A, RDS(ON) = 350m (max.) @ VGS =-10V (8) (7) (6) (5) D1 D1 D2 D2 RDS(ON) = 405m (max.) @ VGS =-4.5V

SM1F14NSKP N-Channel Enhancement Mode MOSFET Features Pin Description D 150V/18A, D D D RDS(ON)=70m (max.) @ VGS=10V 100% UIS + Rg Tested G Pin 1 S Reliable and Rugged S S Lead Free and Green Devices Available DFN5x6A-8_EP (RoHS Compliant) (5,6,7,8) DDDD Applications (4) G Power Management in TV Converter. DC-DC Converter. S S S ( 1, 2, 3 ) N-Channel MOSFET

SM1A54NHU N-Channel Enhancement Mode MOSFET Features Pin Description D 100V/50A, S RDS(ON)= 14.4m (max.) @ VGS=10V 100% UIS + Rg Tested G Reliable and Rugged Top View of TO-252-2 Lead Free and Green Devices Available (RoHS Compliant) D Applications G Power Management for SMPS. DC-DC Converter. S N-Channel MOSFET Ordering and Marking Information Package Code SM1A5

SM1202NSAS N-Channel Enhancement Mode MOSFET Features Pin Description D 30V/0.35A , RDS(ON)= 700m (max.) @ VGS=4.5V S RDS(ON)= 1000m (max.) @ VGS=2.5V G RDS(ON)= 1600m (max.) @ VGS=1.8V RDS(ON)= 5000m (max.) @ VGS=1.5V Top View of SOT-723 Reliable and Rugged D Lead Free and Green Devices Available (RoHS Compliant) ESD Protection G Applications High Speed Switching.

SM1A50NHF N-Channel Enhancement Mode MOSFET Features Pin Description 100V/200A a, RDS(ON)= 3.2m (max.) @ VGS=10V 100% UIS + Rg Tested S D Reliable and Rugged G Lead Free and Green Devices Available Top View of TO-220 (RoHS Compliant) D Applications G Synchronous Rectification. Power Management in Inverter Systems. Motor Driver. Uninterruptible Power Supply. S N-

SM1A11NSUB N-Channel Enhancement Mode MOSFET Features Pin Description 100V/24A, RDS(ON)= 45m (Max.) @ VGS=10V S Reliable and Rugged D G Lead Free and Green Devices Available Top View of TO-251 (RoHS Compliant) 100% UIS + Rg Tested D Applications G High Speed Switching. High Voltage Synchronous Rectification for S Industrial Application. N-Channel MOS

SM1A25NSV N-Channel Enhancement Mode MOSFET Features Pin Description D 100V/3.3A, RDS(ON)= 162m (max.) @ VGS= 10V G RDS(ON)= 180m (max.) @ VGS= 4.5V D S Reliable and Rugged Lead Free and Green Devices Available Top View SOT-223 (RoHS Compliant) D (2) Applications G (1) Power Management in DC/DC Converter. S (3) N-Channel MOSFET Ordering and Marking Information Packag

SM1A23DSK Dual N-Channel Enhancement Mode MOSFET Features Pin Description D1 D1 D2 100V/3.5A, D2 RDS(ON)= 100m (max.) @ VGS= 10V RDS(ON)= 110m (max.) @ VGS= 4.5V S1 G1 ESD protected S2 G2 Reliable and Rugged Top View of SOP-8 Lead Free and Green Devices Available (RoHS Compliant) D1 D1 D2 D2 Applications Power Management in DC/DC Converter. G1 G2 S1 S2 N-Chann

SM1A11NSU N-Channel Enhancement Mode MOSFET Features Pin Description 100V/24A, Drain 4 RDS(ON)= 45m (Max.) @ VGS=10V 3 Source 2 Reliable and Rugged 1 Gate Lead Free and Green Devices Available (RoHS Compliant) Top View of TO-252-3 D Applications G High Speed Switching. High Voltage Synchronous Rectification for S Industrial Application. N-Channel MOSFET Orderi

SM1F01NF N-Channel Enhancement Mode MOSFET Features Pin Description 150V/80A, RDS(ON)= 16m (max.) @ VGS= 10V Reliable and Rugged S D G Lead Free and Green Devices Available Top View of TO-220 (RoHS Compliant) D Applications G Synchronous Rectification. Power Management in Inverter Systems. S N-Channel MOSFET Ordering and Marking Information Package Code SM1F01N

SM1A16PSV P-Channel Enhancement Mode MOSFET Features Pin Configuration -100V/-2.5A, RDS(ON)=205m (max.) @ VGS=-10V G RDS(ON)=260m (max.) @ VGS=-4.5V D S Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-223 (RoHS Compliant) D Applications G Power Management in Desktop Computer or DC/DC Converters. S P-Channel MOSFET Ordering and Marking Informa

SM1A23NSV N-Channel Enhancement Mode MOSFET Features Pin Description 100V/4.2A, RDS(ON)= 100m (max.) @ VGS= 10V G RDS(ON)= 110m (max.) @ VGS= 4.5V D S Reliable and Rugged Lead Free and Green Devices Available Top View SOT-223 (RoHS Compliant) D (2) Applications G (1) Power Management in DC/DC Converter. S (3) N-Channel MOSFET Ordering and Marking Information Package C

SM1A16PSU/UB P-Channel Enhancement Mode MOSFET Features Pin Configuration -100V/-13A, D RDS(ON)=205m (max.) @ VGS=-10V S RDS(ON)=300m (max.) @ VGS=-4V S D G Reliable and Rugged G Lead Free and Green Devices Available Top View of TO-252-2 Top View of TO-251 (RoHS Compliant) 100% UIS + Rg Tested D G Applications Power Management in Desktop Computer or DC/DC Conve

SM1A20NSU N-Channel Enhancement Mode MOSFET Features Pin Description 100V/40A, Drain 4 RDS(ON)= 28m (Max.) @ VGS=10V 3 Source 2 RDS(ON)= 32m (Max.) @ VGS=4.5V 1 Gate Reliable and Rugged Lead Free and Green Devices Available Top View of TO-252-3 (RoHS Compliant) D Applications G Power Management in DC/DC Converter. S N-Channel MOSFET Ordering and Marking Informa

SM1102PSF P-Channel Enhancement Mode MOSFET Features Pin Description -100V/-27A, RDS(ON)= 42m (Max.) @ VGS=-10V RDS(ON)= 52m (Max.) @ VGS=-4.5V S D Reliable and Rugged G Lead Free and Green Devices Available Top View of TO-220 (RoHS Compliant) S Applications G Power Management in DC/DC Converters and Battery Powered System D P-Channel MOSFET Ordering and Marking Inf

SM1A12DSK Dual N-Channel Enhancement Mode MOSFET Features Pin Description D1 D1 D2 100V/3.5A, D2 RDS(ON)= 101m (max.) @ VGS= 10V RDS(ON)= 114m (max.) @ VGS= 4.5V S1 G1 ESD proteced S2 G2 Reliable and Rugged Top View of SOP-8 Lead Free and Green Devices Available (RoHS Compliant) D1 D1 D2 D2 Applications Power Management in DC/DC Converter. G1 G2 S1 S2 N-Channe

APM1106K Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description D1 N-Channel D1 D2 D2 100V/2A, RDS(ON) = 220m (max.) @ VGS = 10V S1 RDS(ON) = 310m (max.) @ VGS = 4V G1 S2 P-Channel G2 -100V/-2A, Top View of SOP-8 RDS(ON) = 225m (max.) @ VGS = -10V RDS(ON) = 315m (max.) @ VGS = -4V (8) (7) (6) (5) D1 D1 D2 D2 Super High Dense Cell Design

SM1A30NSU N-Channel Enhancement Mode MOSFET Features Pin Description 100V/18A, D RDS(ON)= 70m (max.) @ VGS= 10V S RDS(ON)= 80m (max.) @ VGS= 4.5V G 100% UIS + Rg Tested Reliable and Rugged Top View of TO-252-2 Lead Free and Green Devices Available D (RoHS Compliant) Applications G Power Management in DC/DC Converter. For LED Backlight DC-DC Boost Converter S So

SM1A01NSF N-Channel Enhancement Mode MOSFET Features Pin Description 100V/53A, RDS(ON)=22m (max.) @ VGS=10V Reliable and Rugged S D Lead Free and Green Devices Available G (RoHS Compliant) Top View of TO-220 D Applications Power Management in TV Inverter. G S N-Channel MOSFET Ordering and Marking Information Package Code SM1A01NS F TO-220 Assembly Material Oper

SM1A32NSU N-Channel Enhancement Mode MOSFET Features Pin Description 100V/34A, Drain 4 RDS(ON)= 29m (max.) @ VGS= 10V RDS(ON)= 34m (max.) @ VGS= 4.5V 3 Source 2 Reliable and Rugged 1 Gate Lead Free and Green Devices Available (RoHS Compliant) Top View of TO-252-3 D Applications G For telecom PSE solution. S N-Channel MOSFET Ordering and Marking Information Pac

SM1A40CSK Dual Enhancement Mode MOSFET (N-and P-Channel) Features Pin Description N Channel D1 D1 D2 100V/2.5A, D2 RDS(ON) = 155m (max.) @ VGS = 10V RDS(ON) = 175m (max.) @ VGS = 4.5V S1 G1 RDS(ON) = 195m (max.) @ VGS = 4.0V S2 G2 P Channel Top View of SOP-8 -100V/-1.7A, RDS(ON) = 345m (max.) @ VGS =-10V (8) (7) (6) (5) D1 D1 D2 D2 RDS(ON) = 400m (max.)

SM1A00NSG N-Channel Enhancement Mode MOSFET Features Pin Description D 100V/180Aa, RDS(ON)= 4m (Max.) @ VGS=10V S Reliable and Rugged G Lead Free and Green Devices Available Top View of TO-263-3 (RoHS Compliant) D Applications G Synchronous Rectification. Power Management in Inverter Systems. Motor Driver. Uninterruptible Power Supply. S N-Cha

SM1A63NHK N-Channel Enhancement Mode MOSFET Features Pin Description D D 100V/12A, D D RDS(ON)= 10.5m (max.) @ VGS= 10V RDS(ON)= 13.3m (max.) @ VGS= 4.5V S S 100% UIS + Rg Tested S G Reliable and Rugged Top View of SOP-8 Lead Free and Green Devices Available (RoHS Compliant) (5,6,7,8) D D DD Applications Power Management for SMPS. (4) G DC-DC Converter.

SM1A01NSFP N-Channel Enhancement Mode MOSFET Features Pin Description 100V/25A, RDS(ON)=22m (max.) @ VGS=10V Reliable and Rugged S D G Lead Free and Green Devices Available (RoHS Compliant) Top View of TO-220FP D Applications G Converter Application in LED TV. S N-Channel MOSFET Ordering and Marking Information Package Code SM1A01NS FP TO-220FP Assembly Mat

SM1F00NSF N-Channel Enhancement Mode MOSFET Features Pin Description 150V/108A, RDS(ON)= 10.5m (max.) @ VGS= 10V Reliable and Rugged S D Lead Free and Green Devices Available G (RoHS Compliant) Top View of TO-220 D Applications G Synchronous Rectification. Uninterruptible Power Supply. Montion Control Applications. S N-Channel MOSFET Ordering and Marking Informatio

SM1A06NSKP N-Channel Enhancement Mode MOSFET Features Pin Description D 100V/52A, D D D RDS(ON)=17.5m (Max.) @ VGS=10V Reliable and Rugged G Pin 1 S S Lead Free and Green Devices Available S (RoHS Compliant) DFN5x6-8 (5,6,7,8) DDDD Applications DC-DC Converter. (4) G Motor Control. S S S ( 1, 2, 3 ) N-Channel MOSFET Ordering and Marking Information Package C

SM1200NSAS N-Channel Enhancement Mode MOSFET Features Pin Description D 60V/0.2A , RDS(ON)=2.2 (max.) @ VGS=10V S RDS(ON)=2.6 (max.) @ VGS=4.5V G ESD Protection HBM=(+/-)1600V MM=(+/-)100V Top View of SOT-723 Lead Free and Green Devices Available D Reliable and Rugged (RoHS Compliant) Applications G High Speed and Analog Switching Applications Low voltage drive (

SM1F04NSFP N-Channel Enhancement Mode MOSFET Features Pin Description 150V/58A, RDS(ON)= 13.5m (max.) @ VGS= 10V Reliable and Rugged Lead Free and Green Devices Available S D (RoHS Compliant) G 100% UIS + Rg Tested Top View of TO-220FP D Applications G Synchronous Rectification. Montion Control Applications. S N-Channel MOSFET Ordering and Marking Information

SM1A53NHUB N-Channel Enhancement Mode MOSFET Features Pin Description 100V/70A, RDS(ON)= 10m (max.) @ VGS= 10V 100% UIS + Rg Tested S D Reliable and Rugged G Lead Free and Green Devices Available Top View of TO-251 (RoHS Compliant) D (2) Applications G (1) Power Management for SMPS. DC-DC Converter. S (3) N-Channel MOSFET Ordering and Marking Information Package

SM1A35PSU P-Channel Enhancement Mode MOSFET Features Pin Description -100V/-18A, Drain 4 RDS(ON)= 90m (max.) @ VGS=-10V 3 Source RDS(ON)= 102m (max.) @ VGS=-4.5V 2 1 Gate Reliable and Rugged Lead Free and Green Devices Available Top View of TO-252-3 (RoHS Compliant) 100% UIS Tested D ESD Protection HBM ESD protection level pass 8KV Note The diode connected betw

SM1A11NSF N-Channel Enhancement Mode MOSFET Features Pin Description 100V/24A, RDS(ON)= 45m (Max.) @ VGS=10V Reliable and Rugged S D Lead Free and Green Devices Available G (RoHS Compliant) Top View of TO-220 D Applications G High Speed Switching. High Voltage Synchronous Rectification for S Industrial Application. N-Channel MOSFET Fully Avalanche Rated. Ordering

SM1F12NSUB N-Channel Enhancement Mode MOSFET Features Pin Description 150V/35A, RDS(ON)= 38m (max.) @ VGS= 10V S 100% UIS + Rg Tested D G Reliable and Rugged Top View of TO-251 Lead Free and Green Devices Available (RoHS Compliant) D Applications G Power Management in TV Converter. DC-DC Converter. S N-Channel MOSFET Ordering and Marking Information Package C

SM1A02NSFP N-Channel Enhancement Mode MOSFET Features Pin Description 100V/90A, RDS(ON)= 7.2m (max.) @ VGS= 10V Reliable and Rugged S D G Lead Free and Green Devices Available (RoHS Compliant) Top View of TO-220FP 100% UIS + Rg Tested D Applications G Synchronous Rectification Power Management in Inverter Systems Motor Driver S N-Channel MOSFET Ord

SM1A15PSF P-Channel Enhancement Mode MOSFET Features Pin Configuration -100V/-16A, RDS(ON)=105m (max.) @ VGS=-10V Super High Dense Cell Design S Reliable and Rugged D G Lead Free and Green Devices Available (RoHS Compliant) Top View of TO-220 D Applications G Application for Welding Machine. S P-Channel MOSFET Ordering and Marking Information Package Code SM1A15P

SM1A54NHFP N-Channel Enhancement Mode MOSFET Features Pin Description 100V/42A, RDS(ON)= 14.4m (max.) @ VGS=10V 100% UIS + Rg Tested S D Reliable and Rugged G Lead Free and Green Devices Available Top View of TO-220FP (RoHS Compliant) D Applications G High Efficiency Synchronous Rectification in SMPS. Uninterruptible Power Supply. Hard Switched and High Frequency

SM1F14NSFP N-Channel Enhancement Mode MOSFET Features Pin Description 150V/18A, RDS(ON)= 70m (max.) @ VGS= 10V Reliable and Rugged S Lead Free and Green Devices Available D G (RoHS Compliant) 100% UIS + Rg Tested Top View of TO-220FP D Applications G DC-DC Converter Switching for Networkong. General Purpose Switching. S N-Channel MOSFET Ordering and Marking Inf

SM1A01NSU N-Channel Enhancement Mode MOSFET Features Pin Description 100V/35A, D RDS(ON)=25m (Max.) @ VGS=10V S RDS(ON)=40m (Max.) @ VGS=5V G Reliable and Rugged Lead Free and Green Devices Available Top View of TO-252-3 (RoHS Compliant) D Applications G Power Management in TV Converter. DC-DC Converter. S N-Channel MOSFET Ordering and Marking Info

SM1F33PSU P-Channel Enhancement Mode MOSFET Features Pin Description -150V/-10A, D RDS(ON)= 290m (max.) @ VGS=-10V S 100% UIS + Rg Tested Reliable and Rugged G Lead Free and Green Devices Available Top View of TO-252-2 (RoHS Compliant) D Applications Power Management for Industrial DC / DC G Converters. Load switch. S P-Channel MOSFET Ordering and Marking Informa

APM1110NU/APM1110NUB N-Channel Enhancement Mode MOSFET Features Pin Description 100V/10A, D RDS(ON)= 175m (max.) @ VGS=10V S RDS(ON)= 235m (max.) @ VGS=4.5V S D G ESD Protected G Reliable and Rugged Top View of TO-251 Top View of TO-252-3 Lead Free and Green Devices Available D (RoHS Compliant) Applications G Power Management in TV Inverter. S N-Chan

SM1660DSCS Dual N-Channel Enhancement Mode MOSFET Features Pin Description 60V/0.26A, S2 RDS(ON)= 2.2 (max.) @ VGS=10V G2 D2 RDS(ON)= 2.6 (max.) @ VGS=4.5V D1 G1 S1 Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-363 (RoHS Compliant) (6)D1 (3)D2 ESD Protection (2) (5) Applications G1 G2 Load switch. High-speed line driver. (1)S1 (4

SM1A18NSQG N-Channel Enhancement Mode MOSFET Features Pin Description D D D 100V/3.5A, D RDS(ON) =100m (max.) @ VGS =10V RDS(ON) =130m (max.) @ VGS =4.5V G S S S Avalanche Rated DFN3x3D-8_EP 100% UIS + Rg Tested Reliable and Rugged ( 5,6,7,8 ) Lead Free and Green Devices Available D D D D (RoHS Compliant) (4) Applications G DC-DC Conversion Networking Swit

SM1F08NSU N-Channel Enhancement Mode MOSFET Features Pin Description 150V/14A, D RDS(ON)= 110m (max.) @ VGS= 10V S Reliable and Rugged G Lead Free and Green Devices Available (RoHS Compliant) Top View of TO-252-3 D Applications G Power Management in TV Converter. DC-DC Converter. S N-Channel MOSFET Ordering and Marking Information Package Code SM1F08NS U TO-25

SM1F03NSFP N-Channel Enhancement Mode MOSFET Features Pin Description 150V/13A, RDS(ON)= 65m (max.) @ VGS= 10V RDS(ON)= 80m (max.) @ VGS= 5V Reliable and Rugged S D Lead Free and Green Devices Available G (RoHS Compliant) Top View of TO-220FP D Applications G DC-DC converter switching for Networkong General purpose switching S N-Channel MOSFET Ordering and Markin

SM1A21NSKP N-Channel Enhancement Mode MOSFET Features Pin Description 100V/52A, D D D D RDS(ON)= 17.5m (max.) @ VGS= 10V RDS(ON)= 21m (max.) @ VGS= 4.5V 100% UIS + Rg Tested G S Pin 1 S S Reliable and Rugged DFN5x6A-8_EP Lead Free and Green Devices Available ( 5,6,7,8 ) (RoHS Compliant) D D DD Applications (4) G DC-DC Converter. Motor Control. S S S (1, 2

SM1A08NSV N-Channel Enhancement Mode MOSFET Features Pin Description 100V/8A, RDS(ON)= 29m (max.) @ VGS= 10V G D RDS(ON)= 32m (max.) @ VGS= 6V S Reliable and Rugged Top View SOT-223 Lead Free and Green Devices Available (RoHS Compliant) D Applications LED Application System G Networking Application System Power Management in TV Inverter S N-Channel MOSFET Ordering

SM1A53NHU N-Channel Enhancement Mode MOSFET Features Pin Description 100V/70A, D RDS(ON)= 10m (max.) @ VGS= 10V S 100% UIS + Rg Tested G Reliable and Rugged Lead Free and Green Devices Available Top View of TO-252-2 (RoHS Compliant) D (2) Applications G (1) Power Management for SMPS. DC-DC Converter. S (3) N-Channel MOSFET Ordering and Marking Information Packag

SM1F02NSU N-Channel Enhancement Mode MOSFET Features Pin Description 150V/35A, D RDS(ON)= 46m (max.) @ VGS= 10V S RDS(ON)= 52m (max.) @ VGS= 6V G Reliable and Rugged Lead Free and Green Devices Available Top View of TO-252-3 (RoHS Compliant) D Applications G Power Management in TV Converter. DC-DC Converter. S N-Channel MOSFET Ordering and Marking Information Pa

SM1A20NSFP N-Channel Enhancement Mode MOSFET Features Pin Description 100V/28A, RDS(ON)= 28m (Max.) @ VGS=10V RDS(ON)= 32m (Max.) @ VGS=4.5V S D Reliable and Rugged G Lead Free and Green Devices Available Top View of TO-220FP (RoHS Compliant) D 100% UIS + Rg Tested Applications G Power Management in DC/DC Converter. Boost Converters. Synchronous Rectif

SM1A23NSU N-Channel Enhancement Mode MOSFET Features Pin Description 100V/15A, D RDS(ON)= 100m (max.) @ VGS= 10V S RDS(ON)= 110m (max.) @ VGS= 4.5V 100% UIS + Rg Tested G ESD Protection Top View of TO-252-2 Reliable and Rugged Lead Free and Green Devices Available D (2) (RoHS Compliant) G (1) Applications Power Management in DC/DC Converter. S (3) N-Channel MOSF

SM1105NSV N-Channel Enhancement Mode MOSFET Features Pin Description 100V/3.5A, RDS(ON)= 105m (max.) @ VGS= 10V G RDS(ON)= 175m (max.) @ VGS= 4.5V D S ESD proteced Reliable and Rugged Top View SOT-223 Lead Free and Green Devices Available (RoHS Compliant) D Applications Power Management in TV Inverter. G S N-Channel MOSFET Ordering and Marking Information Package Co

SM1A20NSK N-Channel Enhancement Mode MOSFET Features Pin Description D D 100V/8A, D D RDS(ON)= 28m (max.) @ VGS= 10V RDS(ON)= 32m (max.) @ VGS= 4.5V S Reliable and Rugged S S G Lead Free and Green Devices Available Top View of SOP-8 (RoHS Compliant) ( 5,6,7,8 ) D D D D Applications (4) Power Management in DC/DC Converter. G S S S (1, 2, 3) N-Channel MOSFET

SM1A53NHFP N-Channel Enhancement Mode MOSFET Features Pin Description 100V/50A, RDS(ON)=10m (max.) @ VGS=10V 100% UIS + Rg Tested S D Reliable and Rugged G Lead Free and Green Devices Available Top View of TO-220FP (RoHS Compliant) D Applications G High Efficiency Synchronous Rectification in SMPS. Uninterruptible Power Supply. Hard Switched and High Frequency Cir

SM1A10NSU N-Channel Enhancement Mode MOSFET Features Pin Description 100V/10A, D RDS(ON)=175m (max.) @ VGS=10V S RDS(ON)=235m (max.) @ VGS=4.5V G ESD Protected Reliable and Rugged Top View of TO-252-3 Lead Free and Green Devices Available D (RoHS Compliant) Applications G Power Management in TV Inverter. S N-Channel MOSFET Ordering and Marking Information Package C

SM1F03NSK N-Channel Enhancement Mode MOSFET Features Pin Description D D 150V/5A, D D RDS(ON)= 65m (max.) @ VGS= 10V RDS(ON)= 80m (max.) @ VGS= 5V S Reliable and Rugged S S G Lead Free and Green Devices Available Top View of SOP-8 (RoHS Compliant) ( 5,6,7,8 ) D D D D (4) Applications G DC-DC converter switching for Networkong General purpose switching S S S

SM1A11NSFP N-Channel Enhancement Mode MOSFET Features Pin Description 100V/20A, RDS(ON)= 45m (Max.) @ VGS=10V Reliable and Rugged S D Lead Free and Green Devices Available G (RoHS Compliant) Top View of TO-220FP 100% UIS + Rg Tested D Applications G High Efficiency Synchronous Rectification in SMPS. Uninterruptible Power Supply. Hard Switched and

SM1402NSS N-Channel Enhancement Mode MOSFET Features Pin Description 60V/0.4A, D RDS(ON)= 2.2 (max.) @ VGS=10V S RDS(ON)= 2.6 (max.) @ VGS=4.5V G ESD Protection Top View of SC-70 Reliable and Rugged Lead Free and Green Devices Available D (RoHS Compliant) G Applications High Speed Switching. Analog Switching Application. S N-Channel MOSFET Ordering and Ma

SM1A16PSU/UB P-Channel Enhancement Mode MOSFET Features Pin Configuration -100V/-13A, D RDS(ON)=205m (max.) @ VGS=-10V S RDS(ON)=300m (max.) @ VGS=-4V S D G Reliable and Rugged G Lead Free and Green Devices Available Top View of TO-252-2 Top View of TO-251 (RoHS Compliant) 100% UIS + Rg Tested D G Applications Power Management in Desktop Computer or DC/DC Conve

SM1A54NHF N-Channel Enhancement Mode MOSFET Features Pin Description 100V/50A, RDS(ON)= 14.4m (max.) @ VGS=10V 100% UIS + Rg Tested S D Reliable and Rugged G Lead Free and Green Devices Available Top View of TO-220 (RoHS Compliant) D Applications G Power Management for SMPS. DC-DC Converter. S N-Channel MOSFET Ordering and Marking Information Package Code SM1A54N

SM1A00NSF N-Channel Enhancement Mode MOSFET Features Pin Description 100V/180Aa, RDS(ON)= 4.2m (Max.) @ VGS=10V Reliable and Rugged S D Lead Free and Green Devices Available G (RoHS Compliant) Top View of TO-220 D Applications G Synchronous Rectification. Power Management in Inverter Systems. Motor Driver. Uninterruptible Power Supply. S N-Channel MOSFET Ordering

SM1105NSUB N-Channel Enhancement Mode MOSFET Features Pin Description 100V/16A, RDS(ON)= 100m (max.) @ VGS=10V S RDS(ON)= 170m (max.) @ VGS=4.5V D G ESD Protected Top View of TO-251 Reliable and Rugged D Lead Free and Green Devices Available (RoHS Compliant) G Applications Power Management in TV Inverter. S N-Channel MOSFET Ordering and Marking Information Package

SM1691OSCS Single N-Channel Enhancement Mode MOSFET with Schottky Diode Features Pin Description Channel 1 (NMOS) 60V/0.26A, S2 RDS(ON)= 2.2 (max.) @ VGS=10V NC D2 RDS(ON)= 2.6 (max.) @ VGS=4.5V D1 S1 G1 Channel 2 (Schottky Diode) 40V/0.35A, Top View of SOT-363 Vf= 0.4V(max.) @ IF=0.02A (6)D1 (3)D2 Vf= 0.6V(max.) @ IF=0.2A Reliable and Rugged Lead Free and Green

SM1A25NSU N-Channel Enhancement Mode MOSFET Features Pin Description 100V/10A, D RDS(ON)= 162m (max.) @ VGS= 10V S RDS(ON)= 180m (max.) @ VGS= 4.5V Reliable and Rugged G Lead Free and Green Devices Available (RoHS Compliant) Top View of TO-252 D (2) Applications G (1) Power Management in TV Inverter. S (3) N-Channel MOSFET Ordering and Marking Information Package C

SM1A27PSU P-Channel Enhancement Mode MOSFET Features Pin Configuration -100V/-11A, D RDS(ON)=205m (max.) @ VGS=-10V S Reliable and Rugged G Lead Free and Green Devices Available (RoHS Compliant) Top View of TO-252-3 D Applications G Application for Textile Machine. S P-Channel MOSFET Ordering and Marking Information SM1A27PS Package Code U TO-252-3 Assembly Mater

APM1110K N-Channel Enhancement Mode MOSFET Features Pin Configuration D D D 100V/2.7A, D RDS(ON)=140m (typ.) @ VGS=10V RDS(ON)=185m (typ.) @ VGS=4.5V S S ESD Protected S G Reliable and Rugged Top View of SOP-8 Lead Free and Green Devices Available (8, 7, 6, 5) D D D D (RoHS Compliant) Applications (4) G Power Management in TV Inverter. S S S (1, 2, 3) N-Ch

SM1A06NSK N-Channel Enhancement Mode MOSFET Features Pin Description D D 100V/7A, D D RDS(ON)= 18m (max.) @ VGS= 10V 100% UIS + Rg Tested S S Reliable and Rugged S G Lead Free and Green Devices Available Top View of SOP-8 (RoHS Compliant) (5,6,7,8) DDDD Applications (4) G DC-DC Converter. Secondary Side Synchronous Rectification. S S S ( 1, 2, 3 ) N-Channel M

SM1F03NSU N-Channel Enhancement Mode MOSFET Features Pin Description 150V/24A, Drain 4 RDS(ON)= 65m (max.) @ VGS= 10V 3 Source Reliable and Rugged 2 Lead Free and Green Devices Available 1 Gate (RoHS Compliant) Top View of TO-252-3 D Applications G DC-DC converter switching for Networkong General purpose switching S N-Channel MOSFET Ordering and Marking Informatio

SM1A15NSFP N-Channel Enhancement Mode MOSFET Features Pin Description 100V/16A, RDS(ON)=44m (max.) @ VGS=10V Reliable and Rugged S D Lead Free and Green Devices Available G (RoHS Compliant) Top View of TO-220FP D Applications G DC-DC Conversion. Networking Switch. S N-Channel MOSFET Ordering and Marking Information Package Code SM1A15NS FP TO-220FP Assembly Ma

SM1A01NSF N-Channel Enhancement Mode MOSFET Features Pin Description 100V/53A, RDS(ON)=22m (max.) @ VGS=10V Reliable and Rugged S D Lead Free and Green Devices Available G (RoHS Compliant) Top View of TO-220 D Applications Power Management in TV Inverter. G S N-Channel MOSFET Ordering and Marking Information Package Code SM1A01NS F TO-220 Assembly Material

SM1A27PSUB P-Channel Enhancement Mode MOSFET Features Pin Configuration -100V/-11A, RDS(ON)= 190m (max.) @ VGS=-10V S Reliable and Rugged D G Lead Free and Green Devices Available Top View of TO-251 (RoHS Compliant) 100% UIS + Rg Tested D Applications G Application for Textile Machine. S P-Channel MOSFET Ordering and Marking Information Package Code SM1A27PS UB

SM1A52NHF N-Channel Enhancement Mode MOSFET Features Pin Description 100V/120A, RDS(ON)=4.5m (max.) @ VGS=10V 100% UIS + Rg Tested S D Reliable and Rugged G Lead Free and Green Devices Available Top View of TO-220 (RoHS Compliant) D Applications G High Efficiency Synchronous Rectification in SMPS. Uninterruptible Power Supply. Hard Switched and High Frequency Circ

SM1A25NSUB N-Channel Enhancement Mode MOSFET Features Pin Description 100V/10A, RDS(ON)= 162m (max.) @ VGS= 10V RDS(ON)= 180m (max.) @ VGS= 4.5V S 100% UIS + Rg Tested D G Reliable and Rugged Top View of TO-251 Lead Free and Green Devices Available (RoHS Compliant) D (2) Applications G (1) Power Management in TV Inverter. S (3) N-Channel MOSFET Ordering and M

SM1A13NSK N-Channel Enhancement Mode MOSFET Features Pin Description D D D 100V/7A, D RDS(ON)= 51m (max.) @ VGS= 10V RDS(ON)= 57m (max.) @ VGS= 4.5V S S ESD proteced S G Reliable and Rugged Top View of SOP-8 Lead Free and Green Devices Available ( 5,6,7,8 ) (RoHS Compliant) D D DD Applications (4) Power Management in DC/DC Converter. G S S S (1, 2, 3) N-C

SM1A06NSFP N-Channel Enhancement Mode MOSFET Features Pin Description 100V/40A, RDS(ON)= 17.5m (Max.) @ VGS=10V Reliable and Rugged S D G Lead Free and Green Devices Available (RoHS Compliant) Top View of TO-220FP 100% UIS + Rg Tested D Applications G High Efficiency Synchronous Rectification in SMPS. Uninterruptible Power Supply. Hard Switched

SM1A28NSUB N-Channel Enhancement Mode MOSFET Features Pin Description 100V/17A, RDS(ON)= 76m (Max.) @ VGS=10V S Reliable and Rugged D G Lead Free and Green Devices Available Top View of TO-251 (RoHS Compliant) 100% UIS + Rg Tested D Applications G Application for Textile Machine. S N-Channel MOSFET Ordering and Marking Information Package Code SM1A28NS

SM1501GSQH Dual N-Channel Enhancement Mode MOSFET Features Pin Description S2 20V/0.55A , G2 RDS(ON)= 800m (max.) @ VGS=4.5V D1 D2 G1 RDS(ON)= 1100m (max.) @ VGS=2.5V S1 RDS(ON)= 1450m (max.) @ VGS=1.8V Top View of SOT-563 Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) (6)D1 (3)D2 ESD Protection (2) (5) Applications G1 G2 Power Suppl

SM1A24NSKP N-Channel Enhancement Mode MOSFET Features Pin Description 100V/10A, D D D D RDS(ON)= 126m (max.) @ VGS= 10V RDS(ON)= 143m (max.) @ VGS= 4.5V Reliable and Rugged G S Pin 1 S S Lead Free and Green Devices Available DFN5x6-8 (RoHS Compliant) ( 5,6,7,8 ) D D DD (4) Applications G Power Management for Boost Converters. Synchronous Rectifiers for SMPS.

SM1110NSC N-Channel Enhancement Mode MOSFET Features Pin Description 100V/1.7A , S D RDS(ON)=200m (max.) @ VGS=10V D G RDS(ON)=235m (max.) @ VGS=4.5V D D ESD Protected Top View of SOT-23-6 Reliable and Rugged Lead Free and Green Devices Available (1,2,5,6) (RoHS Compliant) DDDD Applications (3)G Power Management in TV Inverter. DC/DC Converter. (4)S N-Channel M

SM1F12NSKP N-Channel Enhancement Mode MOSFET Features Pin Description 150V/32A, D D D D RDS(ON)= 38m (max.) @ VGS= 10V Reliable and Rugged G Lead Free and Green Devices Available S Pin 1 S S (RoHS Compliant) DFN5x6-8 ( 5,6,7,8 ) D D DD Applications Power Management in TV Converter. (4) G DC-DC Converter. S S S (1, 2, 3) N-Channel MOSFET Ordering and Marking

SM1C01NSFH N-Channel Enhancement Mode MOSFET Features Pin Description 120V/120A, RDS(ON)= 8.4m (max.) @ VGS= 10V Reliable and Rugged Lead Free and Green Devices Available S D (RoHS Compliant) G Top View of TO-220H D (2) Applications Synchronous Rectification. G (1) Power Management in Inverter Systems. Motor Driver. S (3) N-Channel MOSFET Ordering and Marking In

SM1A30NSK N-Channel Enhancement Mode MOSFET Features Pin Description D D D 100V/5A, D RDS(ON)= 70m (Max.) @ VGS=10V RDS(ON)= 80m (Max.) @ VGS=4.5V S S S Reliable and Rugged G Lead Free and Green Devices Available Top View of SOP-8 (RoHS Compliant) ( 5,6,7,8 ) D D DD Applications (4) G Power Management in DC/DC Converter. For LED Backlight DC-DC boost converter

SM1F04NSF N-Channel Enhancement Mode MOSFET Features Pin Description 150V/86A, RDS(ON)= 13.5m (max.) @ VGS= 10V Reliable and Rugged S D Lead Free and Green Devices Available G (RoHS Compliant) Top View of TO-220 100% UIS + Rg Tested D Applications G Synchronous Rectification. Montion Control Applications. S N-Channel MOSFET Ordering and Marking Informati

SM1A00NSW N-Channel Enhancement Mode MOSFET Features Pin Description 100V/180Aa, RDS(ON)= 4.2m (Max.) @ VGS=10V Reliable and Rugged S D G Lead Free and Green Devices Available (RoHS Compliant) Top View of TO-247 100% UIS + Rg Tested D Applications G Synchronous Rectification. Power Management in Inverter Systems. Motor Driver. S Uninterruptibl

SM1401PSS P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-2.8A, D RDS(ON)= 92m (Max.) @ VGS=-4.5V S RDS(ON)= 135m (Max.) @ VGS=-2.5V G RDS(ON)= 220m (Max.) @ VGS=-1.8V Top View of SC-70 Super High Dense Cell Design Reliable and Rugged D Lead Free and Green Devices Available (RoHS Compliant) G Applications Power Management in Notebook Computer, Portabl

SM1A08NSU N-Channel Enhancement Mode MOSFET Features Pin Description 100V/40A, D RDS(ON)= 28m (Max.) @ VGS=10V S RDS(ON)= 31m (Max.) @ VGS=6V G Reliable and Rugged Lead Free and Green Devices Available Top View of TO-252-3 (RoHS Compliant) D Applications G LED Application System. Networking Application System. S N-Channel MOSFET Ordering and Marking Information

SM1A06NSF N-Channel Enhancement Mode MOSFET Features Pin Description 100V/60A, RDS(ON)= 17.5m (Max.) @ VGS=10V Reliable and Rugged S D Lead Free and Green Devices Available G (RoHS Compliant) Top View of TO-220 D Applications G High Efficiency Synchronous Rectification in SMPS. Uninterruptible Power Supply. Hard Switched and High Frequency Circuits. S N-Channel M

SM1A64NHKP N-Channel Enhancement Mode MOSFET Features Pin Description 100V/43A, D D D D RDS(ON)= 13.5m (max.) @ VGS= 10V RDS(ON)= 18.2m (max.) @ VGS= 4.5V 100% UIS + Rg Tested G Pin 1 S S S Reliable and Rugged DFN5x6A-8_EP Lead Free and Green Devices Available (5,6,7,8) (RoHS Compliant) D D DD Applications (4) G Power Management for SMPS Charger adaptor SR.

SM1F02NSF N-Channel Enhancement Mode MOSFET Features Pin Description 150V/35A, RDS(ON)= 38m (max.) @ VGS= 10V 100% UIS + Rg Tested S D Reliable and Rugged G Lead Free and Green Devices Available Top View of TO-220 (RoHS Compliant) D Applications G Power Management in TV Converter. DC-DC Converter. S N-Channel MOSFET Ordering and Marking Information Package Code

SM1A63NHUB N-Channel Enhancement Mode MOSFET Features Pin Description 100V/73A, RDS(ON)= 9.6m (max.) @ VGS= 10V RDS(ON)= 12.4m (max.) @ VGS= 4.5V S 100% UIS + Rg Tested D G Reliable and Rugged Top View of TO-251 Lead Free and Green Devices Available (RoHS Compliant) D (2) Applications G (1) Power Management for SMPS. DC-DC Converter. S (3) N-Channel MOSFET Orde

SM1A15NSF N-Channel Enhancement Mode MOSFET Features Pin Description 100V/32A, RDS(ON)=44m (max.) @ VGS=10V Reliable and Rugged S D Lead Free and Green Devices Available G (RoHS Compliant) Top View of TO-220 D Applications G Power Management in Inverter Systems. S N-Channel MOSFET Ordering and Marking Information Package Code SM1A15NS F TO-220 Assembly Mate

SM1A22NSFP N-Channel Enhancement Mode MOSFET Features Pin Description 100V/4.2A, RDS(ON)= 340m (Max.) @ VGS=10V RDS(ON)= 385m (Max.) @ VGS=4.5V S 100% UIS + Rg Tested D G Reliable and Rugged Top View of TO-220FP Lead Free and Green Devices Available D (RoHS Compliant) Applications G Power Management in DC/DC Converter. S N-Channel MOSFET Ordering and Marking Inform

SM1F04NSG N-Channel Enhancement Mode MOSFET Features Pin Description D 150V/86A, RDS(ON)= 13.5m (max.) @ VGS= 10V S Reliable and Rugged G Lead Free and Green Devices Available Top View of TO-263-3 (RoHS Compliant) D Applications G Synchronous Rectification. Power Management in Inverter Systems. S N-Channel MOSFET Ordering and Marking Information Package Code SM1F0

SM1F15NSV N-Channel Enhancement Mode MOSFET Features Pin Description 150V/2.6A, RDS(ON)= 210m (max.) @ VGS=10V G RDS(ON)= 235m (max.) @ VGS=4.5V D S 100% UIS + Rg Tested Reliable and Rugged Top View SOT-223 Lead Free and Green Devices Available (RoHS Compliant) D Applications G Transformer Driving Switch DC-DC Converters Primary Switch Load Switch S N-Channel MO

SM1110NSA N-Channel Enhancement Mode MOSFET Features Pin Description 100V/1.7A , D RDS(ON)=200m (max.) @ VGS=10V S RDS(ON)=235m (max.) @ VGS=4.5V G ESD Protected Reliable and Rugged Top View of SOT-23-3 Lead Free and Green Devices Available D (RoHS Compliant) Applications G Power Management in TV Inveter. S N-Channel MOSFET Ordering and Marking Information SM1110NS

SM1A02NSF N-Channel Enhancement Mode MOSFET Features Pin Description 100V/130A, RDS(ON)= 7.2m (max.) @ VGS= 10V Reliable and Rugged S D Lead Free and Green Devices Available G (RoHS Compliant) Top View of TO-220 D Applications G Synchronous Rectification Power Management in Inverter Systems Motor Driver S N-Channel MOSFET Ordering and Marking Information Package C

SM1620CSCS Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 20V/0.91A, S2 RDS(ON)= 240m (max.) @ VGS=4.5V G2 D2 RDS(ON)= 320m (max.) @ VGS=2.5V D1 G1 S1 P-Channel -12V/-0.86A, Top View of SOT-363 RDS(ON)= 290m (max.) @ VGS=-4.5V RDS(ON)= 400m (max.) @ VGS=-2.5V (3)D2 (6)D1 RDS(ON)= 530m (max.) @ VGS=-1.8V Reliable and Rugged Lead

SM1A24NSK N-Channel Enhancement Mode MOSFET Features Pin Description D D 100V/4A, D D RDS(ON)= 120m (max.) @ VGS= 10V RDS(ON)= 135m (max.) @ VGS= 4.5V S Reliable and Rugged S S G Lead Free and Green Devices Available Top View of SOP-8 (RoHS Compliant) ( 5,6,7,8 ) D D D D (4) Applications G Power Management in DC/DC Converter. S S S (1, 2, 3) N-Channel MOSFET

SM1A42CSK Dual Enhancement Mode MOSFET (N-and P-Channel) Features Pin Description N Channel D1 D1 D2 100V/2.5A, D2 RDS(ON) = 150m (max.) @ VGS = 10V RDS(ON) = 170m (max.) @ VGS = 4.5V S1 G1 P Channel S2 G2 -100V/-2.2A, Top View of SOP-8 RDS(ON) = 205m (max.) @ VGS =-10V (8) (7) (6) (5) RDS(ON) = 240m (max.) @ VGS =-4.5V D1 D1 D2 D2 100% UIS + Rg Tested

SM1A06NSU N-Channel Enhancement Mode MOSFET Features Pin Description Drain 4 100V/60A, RDS(ON)=17m (Max.) @ VGS=10V 3 Source 2 Reliable and Rugged 1 Gate Lead Free and Green Devices Available (RoHS Compliant) Top View of TO-252 D Applications G Power Management in TV Converter. DC-DC Converter. S N-Channel MOSFET Ordering and Marking Information Package Code SM1A

SM1C01NSFP N-Channel Enhancement Mode MOSFET Features Pin Description 120V/80A, RDS(ON)= 8.4m (max.) @ VGS= 10V Reliable and Rugged S Lead Free and Green Devices Available D G (RoHS Compliant) Top View of TO-220FP 100% UIS + Rg Tested D (2) Applications Synchronous Rectification. G (1) Power Management in Inverter Systems. Motor Driver. S (3) N-Channe

SM1108NSF/SM1108NSFP N-Channel Enhancement Mode MOSFET Features Pin Description 100V/120A, RDS(ON)=7.4m (max.) @ VGS=10V Reliable and Rugged S S D D G G Lead Free and Green Devices Available Top View of TO-220 Top View of TO-220-FP (RoHS Compliant) D Applications G Synchronous Rectification. Power Management in Inverter Systems. S N-Channel MOSFET Ordering and

APM1105NU N-Channel Enhancement Mode MOSFET Features Pin Description D 100V/16A, RDS(ON)= 100m (max.) @ VGS=10V S RDS(ON)= 170m (max.) @ VGS=4.5V G ESD Protected Top View of TO-252-3 Reliable and Rugged D Lead Free and Green Devices Available (RoHS Compliant) G Applications Power Management in TV Inverter. S N-Channel MOSFET Ordering and Marking Information

SM1C01NSF N-Channel Enhancement Mode MOSFET Features Pin Description 120V/120A, RDS(ON)= 8.4m (max.) @ VGS= 10V Reliable and Rugged S D Lead Free and Green Devices Available G (RoHS Compliant) Top View of TO-220 D Applications G Synchronous Rectification Power Management in Inverter Systems Motor Driver S N-Channel MOSFET Ordering and Marking Information Package C

SM1301NSSA N-Channel Enhancement Mode MOSFET Features Pin Description 30V/0.8A, D RDS(ON)= 0.8 (max.) @ VGS=10V RDS(ON)= 1.1 (max.) @ VGS=4.5V S RDS(ON)= 2.1 (max.) @ VGS=2.5V G Reliable and Rugged Top View of SOT-523 Lead Free and Green Devices Available (RoHS Compliant) D ESD Protection G Applications High Speed and Analog Switching Applications S Low voltage d

SM1F13NSK N-Channel Enhancement Mode MOSFET Features Pin Description D D D 150V/4.5A, D RDS(ON)= 69m (max.) @ VGS=10V RDS(ON)= 78m (max.) @ VGS=4.5V S S S 100% UIS + Rg Tested G Reliable and Rugged Top View of SOP-8 Lead Free and Green Devices Available ( 5,6,7,8 ) (RoHS Compliant) D D D D Applications (4) G DC-DC converter switching for Networkong General

SM1A11NSK N-Channel Enhancement Mode MOSFET Features Pin Description D D D 100V/6A, D RDS(ON)= 45m (Max.) @ VGS=10V S Reliable and Rugged S S Lead Free and Green Devices Available G Top View of SOP-8 (RoHS Compliant) ( 5,6,7,8 ) D D D D Applications (4) G Power Management for Boost Converters. Synchronous Rectifiers for SMPS. LED Backlighting. S S S (1, 2, 3

SM1A23NSK N-Channel Enhancement Mode MOSFET Features Pin Description D D 100V/4.2A, D D RDS(ON)= 100m (max.) @ VGS= 10V RDS(ON)= 110m (max.) @ VGS= 4.5V S Reliable and Rugged S S G Lead Free and Green Devices Available Top View of SOP-8 (RoHS Compliant) ( 5,6,7,8 ) D D D D (4) Applications G Power Management in DC/DC Converter. S S S (1, 2, 3) N-Channel MOSF

SM1A07NSF N-Channel Enhancement Mode MOSFET Features Pin Description 100V/118A, RDS(ON)= 6.4m (Max.) @ VGS=10V Reliable and Rugged S D Lead Free and Green Devices Available G (RoHS Compliant) Top View of TO-220 D Applications G Synchronous Rectification. Power Management in Inverter Systems. Motor Driver. S N-Channel MOSFET Ordering and Marking

SM1105NSK N-Channel Enhancement Mode MOSFET Features Pin Description D D D D 100V/3.5A, RDS(ON)= 105m (max.) @ VGS= 10V RDS(ON)= 175m (max.) @ VGS= 4.5V S S S ESD proteced G Reliable and Rugged Top View of SOP-8 Lead Free and Green Devices Available ( 5,6,7,8 ) (RoHS Compliant) D D D D Applications Power Management in TV Inverter. (4) G S S S (1, 2, 3) N-Chan

SM1A23NSD N-Channel Enhancement Mode MOSFET Features Pin Description 100V/4.2A, RDS(ON)= 100m (max.) @ VGS= 10V S D RDS(ON)= 110m (max.) @ VGS= 4.5V G Reliable and Rugged Lead Free and Green Devices Available Top View SOT-89 (RoHS Compliant) D (2) Applications G (1) Power Management in DC/DC Converter. Load Switching. S (3) N-Channel MOSFET Ordering and Marking Inform

SM1A63NHUC N-Channel Enhancement Mode MOSFET Features Pin Description 100V/73A, RDS(ON)= 9.6m (max.) @ VGS= 10V RDS(ON)= 12.4m (max.) @ VGS= 4.5V 100% UIS + Rg Tested Reliable and Rugged Lead Free and Green Devices Available Top View of TO-251S (RoHS Compliant) D (2) Applications G (1) Power Management for SMPS. DC-DC Converter. S (3) N-Channel MOSFET Ordering and

SM1F08NSFP N-Channel Enhancement Mode MOSFET Features Pin Description 150V/12A, RDS(ON)= 110m (max.) @ VGS= 10V Reliable and Rugged S D Lead Free and Green Devices Available G (RoHS Compliant) Top View of TO-220FP 100% UIS + Rg Tested D Applications G DC-DC Converter Switching for Networkong. General Purpose Switching. S N-Channel MOSFET Ordering and Marking I

SM1A33PSU P-Channel Enhancement Mode MOSFET Features Pin Description -100V/-38A, Drain 4 RDS(ON)= 39m (max.) @ VGS=-10V 3 Source RDS(ON)= 49m (max.) @ VGS=-4.5V 2 100% UIS+Rg Tested 1 Gate Reliable and Rugged Top View of TO-252-2 Lead Free and Green Devices Available (RoHS Compliant) D Applications G Power Management for Industrial DC / DC Converters. S P

SM1A11NSV N-Channel Enhancement Mode MOSFET Features Pin Description 100V/6A, RDS(ON)= 45m (Max.) @ VGS=10V G Reliable and Rugged D S Lead Free and Green Devices Available (RoHS Compliant) Top View SOT-223 D Applications G Power Management for Boost Converters. Synchronous Rectifiers for SMPS. S LED Backlighting. N-Channel MOSFET Ordering and Marking Information

SM1A23NSFP N-Channel Enhancement Mode MOSFET Features Pin Description 100V/13A, RDS(ON)= 100m (max.) @ VGS= 10V RDS(ON)= 110m (max.) @ VGS= 4.5V S Reliable and Rugged D G Lead Free and Green Devices Available (RoHS Compliant) Top View of TO-220FP ESD Protection D 100% UIS + Rg Tested G Applications Power Management in DC/DC Converter. S N-Channel MOSFET Ord

SM1A25NSK N-Channel Enhancement Mode MOSFET Features Pin Description D D 100V/3.3A, D D RDS(ON)= 162m (max.) @ VGS= 10V RDS(ON)= 180m (max.) @ VGS= 4.5V S ESD Protection S S G Reliable and Rugged Top View of SOP-8 Lead Free and Green Devices Available ( 5,6,7,8 ) (RoHS Compliant) D D D D (4) Applications G Power Management in TV Inverter. S S S (1, 2, 3) N

SM1A15NSU N-Channel Enhancement Mode MOSFET Features Pin Description 100V/30A, RDS(ON)= 44m (max.) @ VGS= 10V RDS(ON)= 57m (max.) @ VGS= 4.5V Reliable and Rugged Lead Free and Green Devices Available Top View of TO-252-3 (RoHS Compliant) D G Applications Power Management in Inverter Systems. S N-Channel MOSFET Ordering and Marking Information Package Code SM1A1

SM1A24NSU N-Channel Enhancement Mode MOSFET Features Pin Description 100V/12A, D RDS(ON)= 120m (max.) @ VGS= 10V S RDS(ON)= 135m (max.) @ VGS= 4.5V Reliable and Rugged G Lead Free and Green Devices Available (RoHS Compliant) Top View of TO-252 D (2) Applications G (1) Power Management in DC/DC Converter. S (3) N-Channel MOSFET Ordering and Marking Information Packa

SM1F12NSU N-Channel Enhancement Mode MOSFET Features Pin Description 150V/35A, D RDS(ON)= 38m (max.) @ VGS= 10V S 100% UIS + Rg Tested G Reliable and Rugged Top View of TO-252-2 Lead Free and Green Devices Available (RoHS Compliant) D Applications G Power Management in TV Converter. DC-DC Converter. S N-Channel MOSFET Ordering and Marking Information Package C

SM1A63NHKP N-Channel Enhancement Mode MOSFET Features Pin Description 100V/62A, D D D D RDS(ON)= 9m (max.) @ VGS= 10V RDS(ON)= 11.7m (max.) @ VGS= 4.5V 100% UIS + Rg Tested G Pin 1 S S S Reliable and Rugged DFN5x6A-8_EP Lead Free and Green Devices Available (5,6,7,8) (RoHS Compliant) D D DD Applications (4) G Power Management for SMPS. DC-DC Converter. S S

SM1F14NSU N-Channel Enhancement Mode MOSFET Features Pin Description 150V/20A, Drain 4 RDS(ON)= 70m (max.) @ VGS= 10V 3 Source Reliable and Rugged 2 Lead Free and Green Devices Available 1 Gate (RoHS Compliant) Top View of TO-252-3 D Applications G Power Management in TV Converter. DC-DC Converter. S N-Channel MOSFET Ordering and Marking Information Package Cod

SM1A20NSV N-Channel Enhancement Mode MOSFET Features Pin Description 100V/8A, RDS(ON)= 29m (max.) @ VGS= 10V G RDS(ON)= 33m (max.) @ VGS= 4.5V D S Reliable and Rugged Lead Free and Green Devices Available Top View SOT-223 (RoHS Compliant) D Applications G Power Management in DC/DC Converter. S N-Channel MOSFET Ordering and Marking Information Package Code

SM1A21NSK N-Channel Enhancement Mode MOSFET Features Pin Description D D 100V/7A, D D RDS(ON)= 18m (max.) @ VGS= 10V RDS(ON)= 21.5m (max.) @ VGS= 4.5V S S 100% UIS + Rg Tested S G Reliable and Rugged Top View of SOP-8 Lead Free and Green Devices Available (5,6,7,8) (RoHS Compliant) DDDD Applications (4) G DC-DC Converter. Motor Control. S S S ( 1, 2, 3 ) N

SM1660DSCS Dual N-Channel Enhancement Mode MOSFET Features Pin Description 60V/0.26A, RDS(ON)= 2.2 (max.) @ VGS=10V S2 G2 D2 RDS(ON)= 2.6 (max.) @ VGS=4.5V D1 G1 Reliable and Rugged S1 Lead Free and Green Devices Available Top View of SOT-363 (RoHS Compliant) (6)D1 (3)D2 ESD Protection HBM=(+/-)1600V MM=(+/-)100V (2) (5) Applications G1 G2 Load switch. Hig

CSM150 N PD TC=25 150 W 1.2 W/ ID VGS=10V,TC=25 34 A ID VGS=10V,TC=100 21 A IDM 136 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.83 /W RthJA 48 /W BVDSS VGS=0V,ID=1.0mA 100 V VGS=10V,ID=21A 0

R CM12N60A www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 LD E 2 3

R C1N0 M55 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 500V N-Channel VDMOS RoHS 1 2 3

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R CM100N03 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 30V N-Channel Trench-MOS RoHS 1 US P 2 3

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SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Typ

DCC030M120G2 68A 1200V N-channel SiC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. 2 Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency 3 Applic

DCCF016M120G3 1200V/16m /110A SiC MOSFET Features Key Parameters VDS Higher System Efficiency 1200V RDS(on)typ Reduced Cooling Requirements 16m ID 175 operating temperature 110A Increased Power Density Vth 2.5V Increased System Switching Frequency Applications Solar and UPS inverters Power Supplies High Voltage DC/DC Converters Switch Mod

DCC016M120G2/DCCF016M120G2 120A 1200V N-channel SiC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. 2 Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequ

DCC075M120G2C 40A 1200V N-channel SiC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. 2 Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency 3 Appli

DCC080M120A/ DCCF080M120A2 36A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. 2 Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Freque

DCC016M120G3 1200V/16m /110A SiC MOSFET Features Key Parameters VDS Higher System Efficiency 1200V RDS(on)typ Reduced Cooling Requirements 16m ID 175 operating temperature 110A Increased Power Density Vth 2.5V Increased System Switching Frequency Applications Solar and UPS inverters Power Supplies High Voltage DC/DC Converters Switch Mode

DCC160M120G1 DCCF160M120G1 18A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. 2 Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Freq

DIP Type Transistors NPN Transistors NJM13003-1.63 TO-126 Unit mm 8.00 0.30 3.25 0.20 Features High voltage capability 3.20 0.10 High speed switching Wide SOA (1.00) (0.50) 0.75 0.10 ROHS compliant 1.75 0.20 1.60 0.10 0.75 0.10 #1 +0.10 2.28TYP 2.28TYP 0.50 0.05 [2.28 0.20] [2.28 0.20] 1. Base 2. Collector 3. Emitter Absol

SGT70N65FDM1P7 70A 650V C 2 SGT70N65FDM1P7 Field Stop 1 UPS,SMPS G PFC 3 E 70A 650V VCE(sat)( )=2.3V@IC=70A

SGT75T65SDM1P7 75A 650V C 2 SGT75T65SDM1P7 1 Field Stop III G UPS SMPS PFC 3 E 75A 650V VCE(sat)( )=1.65V@IC=75A

SGT30T60SDM1P7 30A 600V C 2 SGT30T60SDM1P7 Field Stop III 1 G UPS SMPS PFC 3 E 30A 600V VCE sat =1.65V@IC=30

SGT10T60SDM1P7 10A 600V C 2 SGT10T60SDM1P7 1 Field StopIII G UPS SMPS 3 E 10A 600V VCE(sat)( )=1.65V@I

SGM100HF12A3TFD 100A 1200V IGBT 0B SGM100HF12A3TFD 1B 100A 1200V VCE(sat)( ) =2.1V@IC=100A VCE(sat) A3 DBC

SGT20T60SDM1P7 20 600V C 2 SGT20T60SDM1P7 Field Stop 1 G UPS SMPS PFC 3 E 20A 600V VCE(sat)( )=1.7V@IC=20A

SGT50T65SDM1P7 50A 650V C 2 SGT50T65SDM1P7 1 Field Stop III G UPS SMPS PFC 3 E 50A 650V VCE(sat)( )=1.65V@IC=50A

SGT10T60SDM1D 10A 600V C 2 SGT10T60SDM1D Field StopIII 1 G UPS SMPS 3 E 10A 600V VCE(sat)( )=1.65V@IC=1

SGM150HF12A3TFD 150A, 1200V IGBT SGM150HF12A3TFD 20KHz 150A 1200V VCE(sat)( ) =2.2V@IC=150A VCE(sat)

Green Product BLM14N08L 80V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM14N08L uses advanced trench technology to provide V = 80V,I = 60A DS D excellent R , low gate charge. It can be used in a wide R

BLM10P03 Power MOSFET 1. Description Advantages BLM10P03 uses advanced trench technology and design to provide excellent R with low DS(ON) gate charge. It can be used in a wide variety of applications. Key Characteristics Parameter Value Unit V -30 V DS I -52 A D(TO-252) R 7 m DS(ON)@10V .Typ R 10 m DS(ON)@4.5V .Typ Pin1 Features TO-252 Top View SOP-8 Top V

Pb Free Product BLM138K N-Channel Enhancement Mode Power MOSFET GENERAL FEATURES VDS = 50V,ID = 0.22A RDS(ON)

Pb Free Product BLM12P03 P-Channel Enhancement Mode Power MOSFET D DESCRIPTION G The BLM12P03 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) S voltages as low as 4.5V. Schematic diagram GENERAL FEATURES V = -30V,I = -20A DS D R

Green Product BLQM15N06L 60V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLQM15N06L uses advanced trench technology to V = 60V,I = DS D 50A R

Green Product BLM12N08 80V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM12N08 uses advanced trench technology to provide V = 80V,I = 70A DS D excellent R , low gate charge. It can be used in a wide R

Green Product BLM16N10 100V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM16N10 uses advanced trench technology to provide V = 100V,I = 60A DS D excellent R , low gate charge. It can be used in a wide R

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT CHM1503YJGP Dual Enhancement Mode Field Effect Transistor N-channel Q1 VOLTAGE 30 Volts CURRENT 8 Ampere N-channel Q2 VOLTAGE 30 Volts CURRENT 9 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely

CHENMKO ENTERPRISE CO.,LTD CHM1012LPAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 120 Volts CURRENT 10 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High powe

CHENMKO ENTERPRISE CO.,LTD CHM13N07PAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 70 Volts CURRENT 11 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High power

CHENMKO ENTERPRISE CO.,LTD CHM1423WGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 2.8 Ampere APPLICATION * Power Management in Note book * Portable Equipment * Battery Powered System * DC/DC Converter SC-70/SOT-323 * Load Switch * DSC * LCD Display inverter FEATURE 0.65 1.3 0.1 2.0 0.2 0.65 * Small surface mounting type. (SC-7

CHENMKO ENTERPRISE CO.,LTD CHM1710PAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 100 Volts CURRENT 17 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High power

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT CHM11C2JGP Dual Enhancement Mode Field Effect Transistor N-channel VOLTAGE 30 Volts CURRENT 7 Ampere P-channel VOLTAGE 20 Volts CURRENT 4.3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low R

CHENMKO ENTERPRISE CO.,LTD CHM10N4NGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 450 Volts CURRENT 10 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small flat package. (D2PAK) 0.420(10.67) 0.190(4.83) * High density cell design for extremely low RDS(ON). 0.380(9.69) 0.160(4

CHENMKO ENTERPRISE CO.,LTD CHM1592XGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 500 mAmpere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-62/SOT-89 FEATURE * Small surface mounting type. (SC-62/SOT-89) * High density cell design for extremely low RDS(ON). 4.6MAX. 1.6MAX. * Rugg

CHENMKO ENTERPRISE CO.,LTD CHM1203EVJGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 12 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. ( SO-8 ) * Super high density cell design for extremely low RDS(ON). ( ) 4.06 0.160 ( ) 3.70 0.146 * High p

CHENMKO ENTERPRISE CO.,LTD CHM1413WGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 2.9 Ampere APPLICATION * Power Management in Note book * Portable Equipment * Battery Powered System * DC/DC Converter SC-70/SOT-323 * Load Switch * DSC * LCD Display inverter FEATURE 0.65 1.3 0.1 2.0 0.2 * Small surface mounting type. (SC-70/S

CHENMKO ENTERPRISE CO.,LTD CHM1012PA SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 120 Volts CURRENT 10 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High power

CHENMKO ENTERPRISE CO.,LTD CHM1024VGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 700 mAmpere APPLICATION * Power Management in Note book * Battery Powered System * DC/DC Converter * LCD Display inverter SOT-563 FEATURE * Small surface mounting type. (SOT-563) * Low-Voltage Operation (1) (5) * High-Speed Circuits 0.50 0.9 1

CHENMKO ENTERPRISE CO.,LTD CHM1592GP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 500 mAmpere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small flat package. (SC-59) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (2) * High sat

CHENMKO ENTERPRISE CO.,LTD CHM1012TGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 0.65 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-75/SOT-416 FEATURE * Small surface mounting type. (SC-75/SOT-416) * High density cell design for low RDS(ON). * Suitable for high packing den

CHENMKO ENTERPRISE CO.,LTD CHM12N10PAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 100 Volts CURRENT 11 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High powe

CHENMKO ENTERPRISE CO.,LTD CHM1702XGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 500 mAmpere FEATURE * Small surface mounting type. (SC-62/SOT-89) * High density cell design for extremely low RDS(ON). SC-62/SOT-89 * Rugged and reliable. * High saturation current capability. CONSTRUCTION 4.6MAX. 1.6MAX. * N-Channel Enhancement 1.7MA

CHENMKO ENTERPRISE CO.,LTD CHM1433WGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 2.8 Ampere APPLICATION * Power Management in Note book * Portable Equipment * Battery Powered System * DC/DC Converter SC-70/SOT-323 * Load Switch * DSC * LCD Display inverter FEATURE 0.65 1.3 0.1 2.0 0.2 * Small surface mounting type. (SC-70/S

CHENMKO ENTERPRISE CO.,LTD CHM1304WGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 2.0 Ampere APPLICATION * Power Management in Note book * Portable Equipment * Battery Powered System * DC/DC Converter SC-70/SOT-323 * Load Switch * DSC * LCD Display inverter FEATURE 0.65 1.3 0.1 2.0 0.2 0.65 * Small surface mounting type. (SC-7

CHENMKO ENTERPRISE CO.,LTD CHM1273XGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 2 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-62/SOT-89 FEATURE * Small surface mounting type. (SC-62/SOT-89) * High density cell design for extremely low RDS(ON). 4.6MAX. 1.6MAX. * Rugged

CHENMKO ENTERPRISE CO.,LTD CHM1305WGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 1 Ampere APPLICATION * Power Management in Note book * Portable Equipment * Battery Powered System * DC/DC Converter SC-70/SOT-323 * Load Switch * DSC * LCD Display inverter FEATURE 0.65 1.3 0.1 2.0 0.2 * Small surface mounting type. (SC-70/SOT

CHENMKO ENTERPRISE CO.,LTD CHM1023VGP SURFACE MOUNT Dual P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 0.5 Ampere FEATURE * Small surface mounting type. (SOT-563) * High density cell design for low RDS(ON). * Suitable for high packing density. SOT-563 (1) (5) CONSTRUCTION 0.50 * P-Channel Enhancement 0.9 1.1 1.5 1.7 0.50 (4) (3) 0.15 0.3 1.1 1.

CHENMKO ENTERPRISE CO.,LTD CHM1443WGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 2.8 Ampere APPLICATION * Power Management in Note book * Portable Equipment * Battery Powered System * DC/DC Converter SC-70/SOT-323 * Load Switch * DSC * LCD Display inverter FEATURE 0.65 1.3 0.1 2.0 0.2 0.65 * Small surface mounting type. (SC-7

CHENMKO ENTERPRISE CO.,LTD CHM1825NGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 250 Volts CURRENT 18 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small package. (D2PAK) 0.420(10.67) 0.190(4.83) * Super high dense cell design for extremely low RDS(ON). 0.380(9.69) 0.160(4.

CHENMKO ENTERPRISE CO.,LTD CHM1273GP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 2 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small surface mounting type. (SC-59) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (2) * Hi

CHENMKO ENTERPRISE CO.,LTD CHM12P10N SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 100 Volts CURRENT 11 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small flat package. (D2PAK ) 0.420(10.67) 0.190(4.83) * High density cell design for extremely low RDS(ON). 0.380(9.69) 0.160

CHENMKO ENTERPRISE CO.,LTD CHM1013TGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 0.45 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-75/SOT-416 FEATURE * Small surface mounting type. (SC-75/SOT-416) * High density cell design for low RDS(ON). * Suitable for high packing den

CTM18N20 Crownpo Technology Power MOSFET General Description Features . This Power MOSFET is designed for low voltage, high Silicon Gate for Fast Switching Speeds . speed power switching applications such as switching Low R to Minimize On-Losses. Specified at Elevated DS(on) regulators, converters, solenoid and relay drivers. Temperature . Rugged SOA is Power Dissipation Limi

CTM14N50 Crownpo Technology Power MOSFET General Description Features . This high voltage MOSFET uses an advanced termination Robust High Voltage Termination . scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified . without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable advanced MOSFET is designed to wit

Discontinuance (Aug. 31, 2013) DM1GL75SH12A July. 2010 High Power SPT+ & Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-1 Package devices are optimized to reduce losses and Equivalent Circuit switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives

D WTM D WTM DAWIN Electronics DAWIN Electronics DL2M100N5 Apr. 2008 500V DUAL N-Channel MOSFET Description Equivalent Circuit and Package DAWIN S Dual power MOSFET devices are designed for switching applications of high voltage and current. (You have to connect external Equivalent Circuit fast recovery diode reverse connected across each MOSFET) The mounting base of the module

DIM1600FSM12-A000 Single Switch IGBT Module Replaces DS5533-3.1 DS5533-4 October 2010 (LN27611) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 1600A Non Punch Through Silicon IC(PK) (max) 3200A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the

DIM1000NSM33-TS000 Single Switch IGBT Module Replaces DS6093-1 DS6093-2 October 2013 (LN31017) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 1000A High Current Density Enhanced DMOS SPT IC(PK) (max) 2000A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary

DIM1000ECM33-TL000 IGBT Chopper Module Replaces DS6105-1 DS6105-2 March 2014 (LN31424) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10 s Short Circuit Withstand IC (max) 1000A High Thermal Cycling Capability IC(PK) (max) 2000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlS

DIM800FSM12-A000 Single Switch IGBT Module Replaces DS5531-3.1 DS5531-4 November 2010 (LN27682) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 800A Non Punch Through Silicon IC(PK) (max) 1600A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the

DIM1800ESS12-A000 Single Switch IGBT Module Replaces DS5857-1.1 DS5857-2 October 2010 (LN27614) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V Non Punch Through Silicon IC (max) 1800A Isolated Cu Base with Al2O3 Substrates IC(PK) (max) 3600A Lead Free construction * Measured at the power busbars, not the auxiliary

DIM1000NSM33-TL000 Single Switch IGBT Module DS6109-1 June 2013 (LN30637) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10 s Short Circuit Withstand IC (max) 1000A High Thermal Cycling Capability IC(PK) (max) 2000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base with

Data DIM1200ASM45-TS000 Single Switch IGBT Module Replaces DS6102-1 DS6102-2 October 2013 (LN31073) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 4500V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 1200A High Current Density Enhanced DMOS SPT IC(PK) (max) 2400A Isolated AlSiC Base With AlN Substrates * Measured at the aux

DIM1200FSM17-A000 Single Switch IGBT Module Replaces DS5456-3.5 DS5456-4 November 2010 (LN27718) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 1700V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 1200A Non Punch Through Silicon IC(PK) (max) 2400A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not th

DIM1000ECM33-TS000 IGBT Chopper Module Replaces DS6091-1 DS6091-2 March 2014 (LN31425) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 1000A High Current Density Enhanced DMOS SPT IC(PK) (max) 2000A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminal

DIM1200ESM33-F000 Single Switch IGBT Module Replaces DS5831-2 DS5831-3 May 2011 (LN28347) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.8V High Thermal Cycling Capability IC (max) 1200A Soft Punch Through Silicon IC(PK) (max) 2400A Isolated AlSiC Base With AlN Substrates * Measured at the auxiliary terminals L

DIM600DCM17-A000 IGBT Chopper Module Replaces DS5491-4.2 DS5491-5 March 2011 (LN26753) FEATURES KEY PARAMETERS 0.5 28 6 x O7 0.2 16 10 s Short Circuit Withstand VCES 1700V VCE(sat) * (typ) 2.7V 0.2 High Thermal Cycling Capability screwing depth 40 IC (max) 600A max 8 Non Punch Through Silicon 0.2 53 IC(PK) (max) 1200A Isolated AlSiC Base Wi

Data DIM1200ASM45-TS001 Single Switch IGBT Module Replaces DS6107-1 DS6107-2 October 2013 (LN31065) FEATURES KEY PARAMETERS 10.2kV Isolation VCES 4500V VCE(sat) * (typ) 2.7V 10 s Short Circuit Withstand IC (max) 1200A High Thermal Cycling Capability IC(PK) (max) 2400A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals

Preliminary Information DIM1600ECM17-A000 IGBT Chopper Module DS6069-1 September 2011 (LN28672) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 1700V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 1600A Soft Punch Through Silicon IC(PK) (max) 3200A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminal

DIM400PHM17-A000 IGBT Half Bridge Module Replaces DS5561-1.3 DS5561.2 January 2014 (LN31262) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VDRM 1700V VT* (typ) 4.9V High Thermal Cycling Capability IC (max) 400A Non Punch Through Silicon IC(PK) (max) 800A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the auxiliary

DIM1200FSS12-A000 Single Switch IGBT Module Replaces DS5834-1.2 DS5834-2 October 2010 (LN27661) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V Non Punch Through Silicon IC (max) 1200A Isolated Cu Base with Al2O3 Substrates IC(PK) (max) 2400A Lead Free construction * Measured at the power busbars, not the auxiliary

DIM1800ESM12-A000 Single Switch IGBT Module Replaces DS5529-3 DS5529-4 October 2010 (LN27613) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 1800A Non Punch Through Silicon IC(PK) (max) 3600A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the a

DIM1500ASM33-TL001 Single Switch IGBT Module DS6103-1 June 2013 (LN30625) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10.2kV Isolation IC (max) 1500A 10 s Short Circuit Withstand IC(PK) (max) 3000A High Thermal Cycling Capability * Measured at the auxiliary terminals High Current Density Enhanced DMOS SPT I

DIM400DCM17-A000 IGBT Chopper Module Replaces DS5490-4 DS5490-5 March 2011 (LN28169) KEY PARAMETERS 0.5 28 FEATURES 6 x O7 0.2 16 VCES 1700V 10 s Short Circuit Withstand VCE(sat) * (typ) 2.7V screwing depth 0.2 40 IC (max) 400A High Thermal Cycling Capability max 8 IC(PK) (max) 800A 0.2 53 Non Punch Through Silicon * Measured at the power

DIM400DDM12-A000 Dual Switch IGBT Module Replaces DS5532-3.1 DS5532-4 November 2009 (LN26754) FEATURES KEY PARAMETERS 28 0.5 6 x O7 0.2 10 s Short Circuit Withstand 16 0.2 18 VCES 1200V VCE(sat) * (typ) 2.2 V High Thermal Cycling Capability screwing depth 0.2 0.2 40 44 IC (max) 400A max 8 Non Punch Through Silicon 0.2 0.2 53 57 IC(PK) (max) 800A

DIM1000XSM33-TL001 Single Switch IGBT Module DS6104-1 June 2013 (LN30632) FEATURES KEY PARAMETERS 10.2kV Isolation VCES 3300V VCE(sat) * (typ) 2.0V Low VCE(sat) Device IC (max) 1000A 10 s Short Circuit Withstand IC(PK) (max) 2000A High Thermal Cycling Capability * Measured at the auxiliary terminals High Current Density Enhanced DMOS SPT I

DIM1500ASM33-TS001 Single Switch IGBT Module DS6095-1 April 2013 (LN30405) FEATURES KEY PARAMETERS 10.2kV Isolation VCES 3300V VCE(sat) * (typ) 2.2V 10 s Short Circuit Withstand IC (max) 1500A High Thermal Cycling Capability IC(PK) (max) 3000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base With A

DIM1500ESM33-TS000 Single Switch IGBT Module Replaces DS6072-3 DS6072-4 April 2013 (LN30425) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 1500A Soft Punch Through Silicon IC(PK) (max) 3000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals

DIM800DCM12-A000 DIM800DCM12-A000 IGBT Chopper Module Replaces July 2002 version DS5548-2.0 DS5548- FEATURES KEY PARAMETERS VCES 1200V 10 s Short Circuit Withstand VCE(sat)* (typ) 2.2V High Thermal Cycling Capability IC (max) 800A IC(PK) (max) 1600A Non Punch Through Silicon *(measured at the power busbars and not the auxiliary terminals) Isolated MMC Base with AlN Substrates

DIM800FSM17-A000 Single Switch IGBT Module Replaces DS5461-3.2 DS5461-4 November 2010 (LN27717) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 1700V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 800A Non Punch Through Silicon IC(PK) (max) 1600A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the

DIM800DDM12-A000 Dual Switch IGBT Module Replaces DS5528-3.0 DS5528-4 October 2009 (LN26748) FEATURES KEY PARAMETERS 28 0.5 6 x O7 0.2 10 s Short Circuit Withstand 16 0.2 18 VCES 1200V VCE(sat) * (typ) 2.2 V High Thermal Cycling Capability screwing depth 0.2 0.2 40 44 IC (max) 800A max 8 Non Punch Through Silicon 0.2 0.2 53 57 IC(PK) (

DIM2400ESM17-A000 Single Switch IGBT Module Replaces DS54447-5 DS5447-6 June 2012 (LN29603) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 1700V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 2400A Non Punch Through Silicon IC(PK) (max) 4800A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the aux

DIM1600FSS12-A000 Single Switch IGBT Module Replaces DS5541-2.4 DS5541-3 October 2010 (LN27660) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V Non Punch Through Silicon IC (max) 1600A Isolated Cu Base with Al2O3 Substrates IC(PK) (max) 3200A Lead Free construction * Measured at the power busbars, not the auxiliary

DIM1500ESM33-TL000 Single Switch IGBT Module DS6112-1 June 2013 (LN30640) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat)* (typ) 2.0V 10 s Short Circuit Withstand IC (max) 1500A High Thermal Cycling Capability IC(PK) (max) 3000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base With

DIM1200FSM12-A000 Single Switch IGBT Module Replaces DS5547-3.1 DS5547-4 October 2010 (LN27662) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 1200A Non Punch Through Silicon IC(PK) (max) 2400A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the

DIM2400ESM12-A000 Single Switch IGBT Module Replaces DS5536-3.0 DS5536-4 October 2010 (LN27615) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 2400A Non Punch Through Silicon IC(PK) (max) 4800A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the

DIM1000XSM33-TS001 Single Switch IGBT Module DS6126-1 October 2013 (LN31016) FEATURES KEY PARAMETERS 10.2kV Isolation VCES 3300V VCE(sat) * (typ) 2.2V 10 s Short Circuit Withstand IC (max) 1000A High Thermal Cycling Capability IC(PK) (max) 2000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base With

DIM600DDM17-A000 Dual Switch IGBT Module Replaces DS5596-2 DS5596-3 December 2013 (LN31169) FEATURES KEY PARAMETERS 28 0.5 6 x O7 0.2 10 s Short Circuit Withstand 16 0.2 18 VCES 1700V VCE(sat) * (typ) 2.7 V High Thermal Cycling Capability screwing depth 0.2 0.2 40 44 IC (max) 600A max 8 Non Punch Through Silicon 0.2 0.2 53 57 IC(PK) (ma

DIM800DCM17-A000 IGBT Chopper Module Replaces DS5444-4.2 DS5444-5 April 2011 (LN26752) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 1700V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 800A Non Punch Through Silicon IC(PK) (max) 1600A Isolated AlSiC Base With AlN Substrates * Measured at the power busbars, not the auxiliary

DIM400DDM17-A000 Dual Switch IGBT Module Replaces DS5549-4.1 June 2002 DS5549-5 June 2009 (LN26749) FEATURES KEY PARAMETERS 28 0.5 6 x O7 0.2 10 s Short Circuit Withstand 16 0.2 18 VCES 1700V VCE(sat) * (typ) 2.7 V High Thermal Cycling Capability screwing depth 0.2 0.2 40 44 IC (max) 400A max 8 Non Punch Through Silicon 0.2 0.2 53 57 I

DIM800DDM17-A000 Dual Switch IGBT Module Replaces DS5433-4.1 July 2002 DS5433-5 June 2009 (LN26751) FEATURES KEY PARAMETERS 28 0.5 6 x O7 0.2 10 s Short Circuit Withstand 16 0.2 18 VCES 1700V VCE(sat) * (typ) 2.7 V High Thermal Cycling Capability screwing depth 0.2 0.2 40 44 IC (max) 800A max 8 Non Punch Through Silicon 0.2 0.2 53 57 I

DIM1600FSM17-A000 Single Switch IGBT Module Replaces DS5455-3.2 DS5455-4 October 2010 (LN27663) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 1700V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 1600A Non Punch Through Silicon IC(PK) (max) 3200A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the

DIM100PHM33-F000 Half Bridge IGBT Module Replaces DS5764-1.2 DS5764-2 October 2011 (LN28815) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.8V High Thermal Cycling Capability IC (max) 100A Soft Punch Through Silicon IC(PK) (max) 200A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals

DIM400PBM17-A000 IGBT Bi-Directional Switch Module Replaces DS5524-2.3 DS5524-3 November 2010 (LN27710) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VDRM 1700V VT* (typ) 4.9V High Thermal Cycling Capability IC (max) 400A Non Punch Through Silicon IC(PK) (max) 800A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not th

Single N-channel MOSFET with schottky diode ELM14702AA-N General description Features ELM14702AA-N uses advanced trench Vds=30V Schottky diode technology to provide excellent Rds(on) Id=11A Vds(V)=30V and low gate charge. Rds(on)

Single P-channel MOSFET ELM14409AA-N General description Features ELM14409AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-15A (Vgs=-10V) resistance. Rds(on)

Single N-channel MOSFET ELM13424CA-S General description Features ELM13424CA-S uses advanced trench technology Vds=30V to provide excellent Rds(on), low gate charge and Id=3.8A (Vgs=10V) operation with gate voltages as low as 2.5V. Rds(on)

(common drain) Dual N-channel MOSFET ELM18814BA-S General description Features ELM18814BA-S uses advanced trench technology Vds=20V to provide excellent Rds(on), low gate charge and Id=7.5A (Vgs=10V) operation with gate voltages as low as 1.8V and internal Rds(on)

Single N-channel MOSFET ELM14430AA-N General description Features ELM14430AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=18A (Vgs=10V) resistance. Rds(on)

Single P-channel MOSFET ELM13421CA-S General description Features ELM13421CA-S uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-2.6A (Vgs=-10V) resistance. Rds(on)

Single P-channel MOSFET ELM14427AA-N General description Features ELM14427AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-12.5A (Vgs=-20V) resistance. Internal ESD protection is included. Rds(on)

Single N-channel MOSFET ELM13414CA-S General description Features ELM13414CA-S uses advanced trench technology Vds=20V to provide excellent Rds(on), low gate charge and Id=4.2A (Vgs=4.5V) operation with gate voltages as low as 1.8V. Rds(on)

Single P-channel MOSFET ELM14411AA-N General description Features ELM14411AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-8A (Vgs=-10V) resistance. Rds(on)

Dual N-channel MOSFET ELM14822AA-N General description Features ELM14822AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on) and low gate charge. Id=8.5A (Vgs=10V) Rds(on)

P MOSFET ELM13419CA-S ELM13419CA-S P Vds=-20V MOSFET Id=-3.5A (Vgs=-10V) ESD Rds(on)

Single P-channel MOSFET ELM14419AA-N General description Features ELM14419AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-9.7A (Vgs=-10V) resistance. Rds(on)

Single N-channel MOSFET ELM14468AA-N General description Features ELM14468AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=11.6A (Vgs=10V) resistance. Rds(on)

Single P-channel MOSFET ELM14425AA-N General description Features ELM14425AA-N uses advanced trench technology to Vds=-38V provide excellent Rds(on), low gate charge and low gate Id=-14A (Vgs=-20V) resistance. Internal ESD protection is included. Rds(on)

Single N-channel MOSFET ELM13416CA-S General description Features ELM13416CA-S uses advanced trench technology to Vds=20V provide excellent Rds(on), low gate charge and operation Id=6.5A (Vgs=4.5V) with gate voltages as low as 1.8V and internal ESD Rds(on)

Single N-channel MOSFET ELM17400FA-S General description Features ELM17400FA-S uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and operation Id=1.7A (Vgs=10V) with gate voltages as low as 2.5V. Rds(on)

Single P-channel MOSFET ELM16405EA-S General description Features ELM16405EA-S uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-5A (Vgs=-10V) resistance. Rds(on)

Single N-channel MOSFET ELM14408AA-N General description Features ELM14408AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=12A (Vgs=10V) resistance. Rds(on)

Single N-channel MOSFET ELM16408EA-S General description Features ELM16408EA-S uses advanced trench technology Vds=20V to provide excellent Rds(on), low gate charge and Id=8.8A (Vgs=10V) operation with gate voltages as low as 1.8V and internal Rds(on)

Single P-channel MOSFET ELM13413CA-S General description Features ELM13413CA-S uses advanced trench technology to Vds=-20V provide excellent Rds(on), low gate charge and low gate Id=-3A (Vgs=-4.5V) resistance. Rds(on)

Single N-channel MOSFET ELM13434CA-S General description Features The ELM13434CA-S uses advanced trench technology to Vds=30V provide excellent RDS(ON) and low gate charge. This Id=4.2A (Vgs=10V) device is suitable for use as a load switch or in PWM Rds(on)

Single P-channel MOSFET ELM17401FA-S General description Features ELM17401FA-S uses advanced trench technology Vds=-30V to provide excellent Rds(on), low gate charge and Id=-1.2A (Vgs=-10V) operation with gate voltages as low as 2.5V. Rds(on)

Single N-channel MOSFET ELM17412GA-S General description Features ELM17412GA-S uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and operation Id=2.1A (Vgs=10V) with gate voltages as low as 2.5V. Rds(on)