Справочник транзисторов. M2

 

Биполярный транзистор M2 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: M2
   Тип материала: Ge
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.1 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 25 V
   Макcимальный постоянный ток коллектора (Ic): 0.012 A
   Предельная температура PN-перехода (Tj): 75 °C
   Ёмкость коллекторного перехода (Cc): 1.4 pf
   Статический коэффициент передачи тока (hfe): 20
   Корпус транзистора: CAN

 Аналоги (замена) для M2

 

 

M2 Datasheet (PDF)

 0.1. Size:647K  1
dmp22m2ups-13.pdf

M2 M2

DMP22M2UPS Green20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package Cooler Running Applications BVDSS RDS(ON) max TC = +25C High Conversion Efficiency Low RDS(ON) Minimizes On State Losses 2.5m @ VGS = -10V -60A -20V

 0.2. Size:309K  1
bm2300.pdf

M2 M2

BM2300 N Channel Enhancement Mode MOSFET 4A DESCRIPTION The BM2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook

 0.3. Size:265K  1
irf6723m2d.pdf

M2 M2

PD - 97441IRF6723M2DTRPbFIRF6723M2DTR1PbFApplicationsl Dual Common Drain Control MOSFETs forDirectFET Power MOSFET Multiphase DC-DC Converters Typical values (unless otherwise specified)FeaturesVDSS VGS RDS(on) RDS(on) l Replaces Two Discrete MOSFETs30V max 20V max 5.2m@ 10V 8.6m@ 4.5Vl Optimized for High Frequency Switchingl Low Profile (

 0.4. Size:829K  1
hm25p06d.pdf

M2 M2

HM25P06DP-Channel Enhancement Mode Power MOSFET Description The HM25P06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-25A RDS(ON)

 0.5. Size:2744K  1
jsm2622.pdf

M2 M2

JSM2622N-Channel Enhancement Mode Power MOSFET N-Channel Enhancement Mode Power MOSFET DDescription The JSM2622 uses advanced trench technology to Gprovide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. SGeneral Features Schematic diagram VDS = 20V,ID = 50A RDS(ON) Typ =4.5m@ VGS=10V 18RDS(ON) =5.0m@ VGS=4.5V Typ

 0.6. Size:2702K  1
jsm2050.pdf

M2 M2

N-Channel Enhancement Mode Power MOSFET DDescription The JSM2050 uses advanced trench technology to Gprovide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. SGeneral Features Schematic diagram VDS = 20V,ID = 50A RDS(ON)

 0.7. Size:268K  1
irf6702m2d.pdf

M2 M2

PD - 97540IRF6702M2DTRPbFIRF6702M2DTR1PbFApplicationsl Dual Common Drain Control MOSFETs forDirectFET Power MOSFET Multiphase DC-DC Converters Typical values (unless otherwise specified)FeaturesVDSS VGS RDS(on) RDS(on) l Replaces Two discrete high side MOSFETs30V max 20V max 5.2m@ 10V 8.6m@ 4.5Vl Optimized for High Frequency Switchingl Low Profile (

 0.8. Size:239K  general electric
rfm25n05 rfm25n06.pdf

M2 M2

 0.9. Size:159K  motorola
mtm20p10.pdf

M2 M2

 0.10. Size:87K  motorola
mhpm2a400.pdf

M2 M2

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MHPM2A400A60M/DMHPM2A400A60MPreliminary Data SheetHybrid Power ModuleHigh Current IGBT Module400 AMP, 600 VOLT HYBRID POWER

 0.11. Size:172K  motorola
mtm2n50.pdf

M2 M2

 0.12. Size:739K  motorola
mtm24n45e.pdf

M2 M2

 0.13. Size:369K  motorola
mth20n15 mtm20n15.pdf

M2 M2

 0.14. Size:98K  international rectifier
irhm2c50se.pdf

M2 M2

PD - 91252AREPETITIVE AVALANCHE AND dv/dt RATED IRHM2C50SEIRHM7C50SEHEXFET TRANSISTORN-CHANNELSINGLE EVENT EFFECT (SEE) RAD HARDProduct Summary600Volt, 0.6, (SEE) RAD HARD HEXFETPart Number BVDSS RDS(on) IDInternational Rectifiers (SEE) RAD HARD technologyIRHM2C50SE 600V 0.60 10.4AHEXFETs demonstrate immunity to SEE failure. Ad-ditionally,

 0.15. Size:228K  international rectifier
auirl7766m2tr.pdf

M2 M2

PD - 97648AUIRL7766M2TRAUTOMOTIVE GRADEAUIRL7766M2TR1 Automotive DirectFET Power MOSFET V(BR)DSS100V Advanced Process Technology Optimized for Automotive DC-DC andRDS(on) typ.8.0mother Heavy Load Applicationsmax. Logic Level Gate Drive 10m Exceptionally Small Footprint and Low ProfileID (Silicon Limited)51A High Power DensityQg 44nC

 0.16. Size:184K  international rectifier
irfm260.pdf

M2 M2

PD - 91388CIRFM260POWER MOSFET 200V, N-CHANNELTHRU-HOLE (TO-254AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) IDIRFM260 0.060 35A*HEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry design achieves very low on-state resistance combined with high transconductance. TO-254

 0.17. Size:182K  international rectifier
irfm240.pdf

M2 M2

PD - 90555DIRFM240JANTX2N7219JANTXV2N7219POWER MOSFETREF:MIL-PRF-19500/596THRU-HOLE (TO-254AA) 200V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFM240 0.18 18AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-si

 0.18. Size:163K  international rectifier
irfm250.pdf

M2 M2

PD - 90554EIRFM250JANTX2N7225JANTXV2N7225POWER MOSFETREF:MIL-PRF-19500/592THRU-HOLE (TO-254AA) 200V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFM250 0.100 27.4AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-

 0.19. Size:230K  international rectifier
auirl7736m2tr.pdf

M2 M2

PD - 97656AUTOMOTIVE GRADEAUIRL7736M2TRAUIRL7736M2TR1DirectFET Power MOSFET Logic LevelV(BR)DSS40V Advanced Process Technology Optimized for Automotive DC-DC, Motor Drive andRDS(on) typ.2.2m other Heavy Load Applicationsmax. 3.0m Exceptionally Small Footprint and Low Profile High Power DensityID (Silicon Limited)112A Low Parasitic

 0.20. Size:288K  international rectifier
auirf7648m2tr1.pdf

M2 M2

PD - 96317BAUIRF7648M2TRAUTOMOTIVE GRADEAUIRF7648M2TR1 Automotive DirectFET Power MOSFET V(BR)DSS60V Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC andRDS(on) typ.5.5mother Heavy Load Applicationsmax. 7.0m Exceptionally Small Footprint and Low Profile High Power DensityID (Silicon Limited)68A Low Parasitic Para

 0.21. Size:289K  international rectifier
auirf7675m2tr.pdf

M2 M2

PD -97552AUIRF7675M2TRAUTOMOTIVE GRADEAUIRF7675M2TR1DirectFET Power MOSFET Advanced Process TechnologyV(BR)DSS Optimized for Class D Audio Amplifier Applications 150V Low Rds(on) for Improved EfficiencyRDS(on) typ.47m Low Qg for Better THD and Improved Efficiencymax. 56m Low Qrr for Better THD and Lower EMIRG (typical)1.2 Low Parasitic In

 0.22. Size:291K  international rectifier
auirf7736m2tr1.pdf

M2 M2

PD - 96316BAUIRF7736M2TRAUTOMOTIVE GRADEAUIRF7736M2TR1 Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS40V Optimized for Automotive Motor Drive, DC-DC andRDS(on) typ.2.5mother Heavy Load Applications Exceptionally Small Footprint and Low Profile max. 3.0m High Power DensityID (Silicon Limited)108A Low Parasitic Param

 0.23. Size:497K  international rectifier
auirf8736m2.pdf

M2 M2

AUTOMOTIVE GRADE AUIRF8736M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 1.3m other Heavy Load Applications max. 1.9m Exceptionally Small Footprint and Low Profile High Power Density ID (Silicon Limited) 137A Low Parasitic Paramete

 0.24. Size:272K  philips
phm21nq15t.pdf

M2 M2

PHM21NQ15TTrenchMOS standard level FETRev. 02 11 September 2003 Product dataM3D8791. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features SOT96 (SO8) footprint compatible Low thermal resistance Surface mounted package Low profile.1.3 Applications DC-to-DC primary side Portab

 0.25. Size:295K  philips
buk1m200-50sgtd.pdf

M2 M2

BUK1M200-50SGTDQuad channel logic level TOPFETRev. 01 31 March 2003 Product data1. Product profile1.1 DescriptionQuad temperature and overload protected power switch based on TOPFET Trenchtechnology in a 20-pin surface mount plastic package.Product availability:BUK1M200-50SGTD in SOT163-1 (SO20).1.2 Features Power TrenchMOS 5V logic compatible Overtemperature pro

 0.26. Size:277K  philips
phm25nq10t.pdf

M2 M2

PHM25NQ10TTrenchMOS standard level FETRev. 03 11 September 2003 Product dataM3D8791. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features SOT96 (SO-8) footprint compatible Low thermal resistance Surface mounted package Low profile.1.3 Applications DC-to-DC primary side Porta

 0.27. Size:302K  philips
buk1m200 50sdld.pdf

M2 M2

BUK1M200-50SDLDQuad channel TOPFETRev. 01 02 April 2003 Product data1. Product profile1.1 DescriptionQuad temperature and overload protected logic level power MOSFET in TOPFETtechnology in a 20-pin surface mount plastic package.Product availability:BUK1M200-50SDLD in SOT163-1 (SO20).1.2 Features Power TrenchMOS 5 V logic compatible input level Overtemperature

 0.28. Size:404K  st
stu9hn65m2.pdf

M2 M2

STU9HN65M2 N-channel 600 V, 0.71 typ., 5.5 A MDmesh M2 Power MOSFET in an IPAK package Datasheet - production data Features Order code V R max. I DS DS(on) DTABSTU9HN65M2 600 V 0.82 5.5 A Extremely low gate charge 32 Excellent output capacitance (COSS) profile 1 100% avalanche tested Zener-protected IPAKApplications Switching applic

 0.29. Size:910K  st
stb37n60dm2ag.pdf

M2 M2

STB37N60DM2AG Automotive-grade N-channel 600 V, 0.094 typ., 28 A MDmesh DM2 Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT TABSTB37N60DM2AG 600 V 0.110 28 A 210 W Designed for automotive applications and 3 AEC-Q101 qualified 1 Fast-recovery body diode Extremely low gate charge and input capa

 0.30. Size:942K  st
stl16n65m2.pdf

M2 M2

STL16N65M2N-channel 650 V, 0.325 typ., 7.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - production dataFeaturesOrder code VDS @ TJmax RDS(on) max IDSTL16N65M2 710 V 0.395 7.5 A Extremely low gate charge1 Excellent output capacitance (Coss) profile 234 100% avalanche tested Zener-protectedPowerFLAT 5x6 HVApplications

 0.31. Size:1059K  st
std7n65m2.pdf

M2 M2

STD7N65M2N-channel 650 V, 0.98 typ., 5 A MDmesh M2 Power MOSFET in a DPAK packageDatasheet - production dataFeaturesRDS(on) Order code VDS max IDTABSTD7N65M2 650 V 1.15 5 A3 Extremely low gate charge1 Excellent output capacitance (Coss) profile 100% avalanche testedDPAK Zener-protectedApplications Switching applicationsFigure 1. Inte

 0.32. Size:266K  st
stf26n65dm2.pdf

M2 M2

STF26N65DM2DatasheetN-channel 650 V, 0.156 typ., 20 A, MDmesh DM2 Power MOSFET in a TO-220FP packageFeaturesVDS RDS(on) max. ID PTOTOrder codeSTF26N65DM2 650 V 0.190 20 A 30 W Fast-recovery body diode Extremely low gate charge and input capacitance321 Low on-resistance 100% avalanche testedTO-220FP Extremely high dv/dt ruggednessD(2)

 0.33. Size:636K  st
stl13n65m2.pdf

M2 M2

STL13N65M2N-channel 650 V, 0.365 typ., 6.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTL13N65M2 650 V 0.475 6.5 A Extremely low gate charge Excellent output capacitance (COSS) profile 123 100% avalanche tested4 Zener-protectedPowerFLAT 5x6 HVApplications S

 0.34. Size:1020K  st
stl10n60m2.pdf

M2 M2

STL10N60M2N-channel 600 V, 0.580 typ., 5.5 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - production dataFeaturesVDS @ Order codeTJmax RDS(on) max IDSTL10N60M2 650 V 0.660 5.5 A Extremely low gate charge123 Lower RDS(on) x area vs previous generation4 Low gate input resistancePowerFLAT 5x6 HV 100% aval

 0.35. Size:431K  st
stf9hn65m2.pdf

M2 M2

STF9HN65M2 N-channel 600 V, 0.71 typ., 5.5 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I DS DS(on) DSTF9HN65M2 600 V 0.82 5.5 A Extremely low gate charge Excellent output capacitance (COSS) profile 3 100% avalanche tested 2 Zener-protected 1Applications TO-220FP Switching appli

 0.36. Size:391K  st
stp12n60m2.pdf

M2 M2

STP12N60M2 N-channel 600 V, 0.395 typ., 9 A MDmesh M2 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTP12N60M2 600 V 0.450 9 A 85 W Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected Applications Switching applications F

 0.37. Size:596K  st
stw56n65dm2.pdf

M2 M2

STW56N65DM2 N-channel 650 V, 0.058 typ., 48 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features R DS(on)Order code V I P DS D TOTmax. STW56N65DM2 650 V 0.065 48 A 360 W Fast-recovery body diode 3 Extremely low gate charge and input 2capacitance 1 Low on-resistance 100% avalanche tested TO-247 Extre

 0.38. Size:876K  st
stp7n65m2 stu7n65m2.pdf

M2 M2

STP7N65M2, STU7N65M2 N-channel 650 V, 0.98 typ., 5 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packages Datasheet - production data Features TABR DS(on)Order code VDS ID max STP7N65M2 650 V 1.15 5 A 32 STU7N65M2 650 V 1.15 5 A TAB1TO-220 Extremely low gate charge 32 Excellent output capacitance (Coss) profile IPAK 1 100% avalanche

 0.39. Size:800K  st
stp26n60m2 stw26n60m2.pdf

M2 M2

STP26N60M2, STW26N60M2 N-channel 600 V, 0.14 typ., 20 A MDmesh M2 Power MOSFETs in TO-220 and TO-247 packages Datasheet - production data Features TABV @ R DS DS(on)Order code I P D TOTT max. JmaxSTP26N60M2 650 V 0.165 20 A 169 W STW26N60M2 33221 Extremely low gate charge 1 Excellent output capacitance (C ) profile OSS 100% avala

 0.40. Size:1627K  st
stb10n60m2 std10n60m2 stp10n60m2 stu10n60m2.pdf

M2 M2

STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in DPAK, DPAK, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABTABRDS(on) 3 Order codes VDS @ TJmax max ID131DPAKSTB10N60M2D 2 PAKSTD10N60M2650 V 0.600 7.5 ASTP10N60M2TABTABSTU10N60M23 Extremely low gate ch

 0.41. Size:67K  st
buh2m20.pdf

M2 M2

BUH2M20APHIGH VOLTAGE NPN SILICONPOWER TRANSISTOR EXTRA HIGH VOLTAGE CAPABILITY LOW OUTPUT CAPACITANCE CHARACTERIZED FOR LINEAR MODEOPERATION.APPLICATIONS: DESIGNED SPECIFICALLY FOR DYNAMICFOCUS IN CTV AND MONITOR. 3DESCRIPTION 21The BUH2M20AP is manufactured usingMultiepitaxial Mesa technology for cost-effectiveTO-220high performance.INTERNAL SCHEMATIC D

 0.42. Size:467K  st
stl16n60m2.pdf

M2 M2

STL16N60M2 N-channel 600 V, 0.290 typ., 8 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features Order code V @ T R max. I DS Jmax DS(on) DSTL16N60M2 650 V 0.355 8 A Extremely low gate charge 1 Excellent output capacitance (COSS) profile 2 100% avalanche tested 34 Zener-protected Applications PowerFL

 0.43. Size:771K  st
stl10n65m2.pdf

M2 M2

STL10N65M2DatasheetN-channel 650 V, 0.85 typ., 4.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV packageFeaturesVDS RDS(on ) max. IDOrder codeSTL10N65M2 650 V 1.00 4.5 A12 Extremely low gate charge34 Excellent output capacitance (COSS) profilePowerFLAT 5x6 HV 100% avalanche tested Zener-protectedD(5, 6, 7, 8)8 7 6 5Applications Switch

 0.44. Size:1255K  st
std16n50m2 stf16n50m2 stp16n50m2.pdf

M2 M2

STD16N50M2, STF16N50M2, STP16N50M2N-channel 500 V, 0.24 typ.,13 A, MDmesh M2 Power MOSFETs in DPAK, TO-220FP and TO-220 packagesDatasheet - preliminary dataFeaturesTAB3Order codes VDS @ TJmax RDS(on) max. ID1DPAKSTD16N50M2STF16N50M2 550 V 0.28 13 ASTP16N50M2TAB Extremely low gate charge Excellent output capacitance (Coss) profile3322 10

 0.45. Size:732K  st
stf6n65m2 stp6n65m2 stu6n65m2.pdf

M2 M2

STF6N65M2, STP6N65M2, STU6N65M2N-channel 650 V, 1.2 typ., 4 A MDmesh M2 Power MOSFETs in TO-220FP, TO-220 and IPAK packagesDatasheet - preliminary dataFeaturesTABOrder codes VDS RDS(on) max IDSTF6N65M23 3STP6N65M2 650 V 1.35 4 A2211STU6N65M2TO-220FP TO-220TAB Extremely low gate charge Excellent output capacitance (COSS) profile32 1

 0.46. Size:440K  st
sti40n65m2 stp40n65m2.pdf

M2 M2

STI40N65M2, STP40N65M2 N-channel 650 V, 0.087 typ., 32 A MDmesh M2 Power MOSFET in IPAK and TO-220 packages Datasheet - production data Features TAB TABOrder code V R max. I DS DS(on) DSTI40N65M2 650 V 0.099 32 A STP40N65M2 3 Extremely low gate charge 232 1 Excellent output capacitance (COSS) profile 1IPAK TO-220 100% avalanche tested

 0.47. Size:254K  st
stw25n60m2-ep.pdf

M2 M2

STW25N60M2-EPDatasheetN-channel 600 V, 0.175 typ., 18 A MDmesh M2 EP Power MOSFET in a TO-247 packageFeaturesVDS @ TJmax RDS(on) max. IDOrder codeSTW25N60M2-EP 650 V 0.188 18 A Extremely low gate charge3 Excellent output capacitance (COSS) profile21 Very low turn-off switching losses 100% avalanche testedTO-247 Zener-protectedD(2, TAB)

 0.48. Size:712K  st
stw50n65dm2ag.pdf

M2 M2

STW50N65DM2AG Automotive-grade N-channel 650 V, 0.070 typ., 38 A Power MOSFET MDmesh DM2 in a TO-247 package Datasheet - production data Features R DS(on)Order code V I P DS D TOTmax. STW50N65DM2AG 650 V 0.087 38 A 300 W AEC-Q101 qualified 3 Fast-recovery body diode 2 Extremely low gate charge and input 1capacitance Low on-resistance

 0.49. Size:1110K  st
stf33n60m2 sti33n60m2 stp33n60m2 stw33n60m2.pdf

M2 M2

STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2N-channel 600 V, 0.108 typ., 26 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAK, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABVDS @ RDS(on) Order codes ID32 3TJmax max1212I PAKTO-220FPSTF33N60M2 26 A(1)TABSTI33N60M2650 V 0.125 STP33N60M2 26 ASTW33N60M233221

 0.50. Size:539K  st
std12n60dm2ag.pdf

M2 M2

STD12N60DM2AGDatasheet Automotive-grade N-channel 600 V, 380 m typ., 10 A MDmesh DM2 Power MOSFET in a DPAK packageFeaturesVDS @ TJmax RDS(on ) max. IDOrder codeTABSTD12N60DM2AG 650 V 430 m 10 A321DPAK AEC-Q101 qualified Fast-recovery body diode Extremely low gate charge and input capacitanceD(2, TAB) Low on-resistance 100% avalanche test

 0.51. Size:1114K  st
stb28n60m2 sti28n60m2 stp28n60m2 stw28n60m2.pdf

M2 M2

STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2 N-channel 600 V, 0.135 typ., 22 A MDmesh M2 Power MOSFETs in DPAK, IPAK, TO-220 and TO-247 Datasheet - production data Features Order code V @ T R max. I DS Jmax DS(on) DSTB28N60M2 STI28N60M2 650 V 0.150 22 A STP28N60M2 STW28N60M2 Extremely low gate charge Excellent output capacitance (C ) profile

 0.52. Size:724K  st
stw56n65m2.pdf

M2 M2

STW56N65M2N-channel 650 V, 0.049 typ., 49 A MDmesh M2 Power MOSFET in a TO-247 packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTW56N65M2 650 V 0.062 49 A Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested32 Zener-protected1ApplicationsTO-247 Switching applicationsFigure

 0.53. Size:578K  st
stw35n60dm2.pdf

M2 M2

STW35N60DM2 N-channel 600 V, 0.094 typ., 28 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features R DS(on)Order code VDS ID PTOT max. STW35N60DM2 600 V 0.110 28 A 210 W Fast-recovery body diode 3 Extremely low gate charge and input 2capacitance 1 Low on-resistance 100% avalanche tested TO-247 Extremely

 0.54. Size:522K  st
std22nm20nt4.pdf

M2 M2

STD22NM20NN-CHANNEL 200V - 0.088 - 22A DPAKULTRA LOW GATE CHARGE MDmesh II MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) IDSTD22NM20N 200 V

 0.55. Size:1046K  st
stf6n60m2 stp6n60m2 stu6n60m2.pdf

M2 M2

STF6N60M2, STP6N60M2, STU6N60M2N-channel 600 V, 1.06 typ., 4.5 A MDmesh II Plus low Qg Power MOSFET in TO-220FP, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABVDS @ RDS(on) 32 Order codes ID1TJmax maxIPAK3STF6N60M221STP6N60M2 650 V 1.2 4.5 ATO-220FP TABSTU6N60M2 Extremely low gate charge3 Lower RDS(on) x area vs previous

 0.56. Size:1235K  st
stb28n65m2 stf28n65m2 stp28n65m2 stw28n65m2.pdf

M2 M2

STB28N65M2, STF28N65M2,STP28N65M2, STW28N65M2N-channel 650 V, 0.15 typ., 20 A MDmesh M2 Power MOSFETsin DPAK, TO-220FP, TO-220 and TO-247 packagesDatasheet - preliminary dataFeaturesTABOrder codes VDS RDS(on) max IDSTB28N65M233STF28N65M212650 V 0.18 20 A1STP28N65M2D2PAKTO-220FPSTW28N65M2TAB Extremely low gate charge Excellent output

 0.57. Size:367K  st
stfi12n60m2.pdf

M2 M2

STFI12N60M2 N-channel 600 V, 0.395 typ., 9 A MDmesh M2 Power MOSFET in an IPAKFP package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTFI12N60M2 600 V 0.450 9 A 25 W Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected Applications Switching application

 0.58. Size:1556K  st
stb24n60m2 sti24n60m2 stp24n60m2 stw24n60m2.pdf

M2 M2

STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABTABOrder codes VDS @ TJmax RDS(on) max ID231STB24N60M2321D2PAKSTI24N60M2I2PAK650 V 0.19 18 ASTP24N60M2TABSTW24N60M2 Extremely low gate charge

 0.59. Size:231K  st
stf25n60m2-ep.pdf

M2 M2

STF25N60M2-EP N-channel 600 V, 0.175 typ., 18 A MDmesh M2 EP Power MOSFET in a TO-220FP package Datasheet - production data Features V @ R DS DS(on)Order code I DTJmax max. STF25N60M2-EP 650 V 0.188 18 A Extremely low gate charge Excellent output capacitance (COSS) profile Very low turn-off switching losses 32 100% avalanche tested 1

 0.60. Size:706K  st
stw63n65dm2.pdf

M2 M2

STW63N65DM2 N-channel 650 V, 0.042 typ., 60 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features R DS(on)Order code V I P DS D TOTmax. STW63N65DM2 650 V 0.05 60 A 446 W Fast-recovery body diode 3 Extremely low gate charge and input 2capacitance 1 Low on-resistance 100% avalanche tested TO-247 Extreme

 0.61. Size:457K  st
stfu9n65m2.pdf

M2 M2

STFU9N65M2DatasheetN-channel 650 V, 0.79 typ., 5 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads packageFeaturesVDS RDS(on) max. IDOrder codeSTFU9N65M2 650 V 0.90 5 A Extremely low gate charge3 Excellent output capacitance (COSS) profile21 100% avalanche testedTO-220FP Zener-protectedultra narrow leadsD(2)Applications Switching

 0.62. Size:257K  st
stw35n65dm2.pdf

M2 M2

STW35N65DM2DatasheetN-channel 650 V, 93 m typ., 32 A MDmesh DM2 Power MOSFET in a TO-247 packageFeaturesVDS RDS(on) max. IDOrder codeSTW35N65DM2 650 V 110 m 32 A Fast-recovery body diode3 Extremely low gate charge and input capacitance21 Low on-resistance 100% avalanche testedTO-247 Extremely high dv/dt ruggedness Zener-protectedD(2, TAB

 0.63. Size:907K  st
stw56n60m2-4.pdf

M2 M2

STW56N60M2-4 N-channel 600 V, 0.045 typ., 52 A MDmesh M2 Power MOSFET in a TO247-4 package Datasheet - production data Features Order code V Jmax DS(on) DDS @ T R max I STW56N60M2-4 650 V 0.055 52 A Excellent switching performance thanks to the extra driving source pin Extremely low gate charge Excellent output capacitance (C ) profile oss 100%

 0.64. Size:859K  st
stf7n60m2.pdf

M2 M2

STF7N60M2N-channel 600 V, 0.86 typ., 5 A MDmesh II Plus low Qg Power MOSFET in TO-220FP packageDatasheet - production dataFeaturesVDS @ RDS(on) Order code IDTJmax maxSTF7N60M2 650 V 0.95 5 A Extremely low gate charge32 Lower RDS(on) x area vs previous generation1 Low gate input resistanceTO-220FP 100% avalanche tested Zener-protectedApp

 0.65. Size:676K  st
stw56n60m2.pdf

M2 M2

STW56N60M2N-channel 600 V, 0.045 typ., 52 A MDmesh M2 Power MOSFET in a TO-247 packageDatasheet - production dataFeaturesRDS(on) Order code VDS @ TJmax max IDSTW56N60M2 650 V 0.055 52 A Extremely low gate charge Excellent output capacitance (Coss) profile 32 100% avalanche tested1 Zener-protectedTO-247Applications Switching application

 0.66. Size:287K  st
stp18n60dm2.pdf

M2 M2

STP18N60DM2 N-channel 600 V, 0.260 typ., 12 A MDmesh DM2 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I DS DS(on) DSTP18N60DM2 600 V 0.295 12 A Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Ze

 0.67. Size:627K  st
stfh18n60m2.pdf

M2 M2

STFH18N60M2DatasheetN-channel 600 V, 0.255 typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP wide creepage packageFeaturesVDS @TJmax RDS(on) max. IDOrder codeSTFH18N60M2 650 V 0.280 13 A Extremely low gate charge Excellent output capacitance (COSS) profileTO-220 FP wide creepage 100% avalanche testedD(2) Zener-protected Wide distance of 4.25 mm bet

 0.68. Size:599K  st
stw70n60dm2.pdf

M2 M2

STW70N60DM2 N-channel 600 V, 0.037 typ., 66 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTW70N60DM2 600 V 0.042 66 A 446 W Fast-recovery body diode Extremely low gate charge and input 3capacitance 2 Low on-resistance 1 100% avalanche tested Extremely high dv/d

 0.69. Size:550K  st
std13n65m2.pdf

M2 M2

STD13N65M2N-channel 650 V, 0.37 typ., 10 A MDmesh M2 Power MOSFET in a DPAK packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDTABSTD13N65M2 650 V 0.43 10 A Extremely low gate charge32 Excellent output capacitance (Coss) profile 1 100% avalanche tested Zener-protectedDPAKApplications Switching applicationsFigure 1. I

 0.70. Size:1022K  st
stw70n60m2.pdf

M2 M2

STW70N60M2N-channel 600 V, 0.03 typ., 68 A MDmesh M2 Power MOSFET in a TO-247 packageDatasheet - production dataFeaturesOrder codes VDS @ TJmax RDS(on) max IDSTW70N60M2 650 V 0.040 68 A Extremely low gate charge321 Excellent output capacitance (Coss) profile 100% avalanche testedTO-247 Zener-protected ApplicationsFigure 1. Internal schematic

 0.71. Size:1178K  st
stb24n65m2 stf24n65m2 stp24n65m2.pdf

M2 M2

STB24N65M2, STF24N65M2, STP24N65M2 N-channel 650 V, 0.185 typ., 16 A MDmesh M2 Power MOSFET in D2PAK, TO-220FP and TO-220 packages Datasheet - production data Features Order codes V R max I DS DS(on) DSTB24N65M2 STF24N65M2 650 V 0.23 16 A STP24N65M2 Extremely low gate charge Excellent output capacitance (C ) profile oss 100% avalanche tested Ze

 0.72. Size:935K  st
std12n65m2.pdf

M2 M2

STD12N65M2 N-channel 650 V, 0.42 typ., 8 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) DSTD12N65M2 650 V 0.5 8 A Extremely low gate charge Excellent output capacitance (COSS) profile DPAK (TO-252) 100% avalanche tested Zener-protected Figure 1: Internal schematic diagram Applicatio

 0.73. Size:1364K  st
stf24n60m2 stfi24n60m2 stfw24n60m2.pdf

M2 M2

STF24N60M2, STFI24N60M2, STFW24N60M2 N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packagesDatasheet - production dataFeaturesOrder codes VDS @ TJmax RDS(on) max IDSTF24N60M2321 1 STFI24N60M2 650 V 0.19 18 A23TO-220FPSTFW24N60M2I2PAKFP(TO-281) Extremely low gate charge Lower RDS(on) x area

 0.74. Size:386K  st
stw45n60dm2ag.pdf

M2 M2

STW45N60DM2AG Automotive-grade N-channel 600 V, 0.085 typ., 34 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features V @ R DS DS(on)Order code I P D TOTTJmax. max. 34 250 STW45N60DM2AG 650 V 0.093 A W 3 Designed for automotive applications and 2AEC-Q101 qualified 1 Fast-recovery body diode Extremely low gate c

 0.75. Size:1047K  st
stl13n60m2.pdf

M2 M2

STL13N60M2N-channel 600 V, 0.39 typ., 7 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - production dataFeaturesOrder code VDS @ TJmax RDS(on) max IDSTL13N60M2 650 V 0.42 7 A Extremely low gate charge Lower RDS(on) x area vs previous generation123 Low gate input resistance4 100% avalanche testedPowerFLAT 5x6

 0.76. Size:760K  st
stw48n60m2-4.pdf

M2 M2

STW48N60M2-4 N-channel 600 V, 0.06 typ., 42 A MDmesh M2 Power MOSFET in a TO247-4 package Datasheet - production data Features Order code V Jmax DS(on) DDS @ T R max I STW48N60M2-4 650 V 0.07 42 A Excellent switching performance thanks to the extra driving source pin Extremely low gate charge Excellent output capacitance (C ) profile oss 100% a

 0.77. Size:1200K  st
stb18n60m2 stp18n60m2 stw18n60m2.pdf

M2 M2

STB18N60M2, STP18N60M2, STW18N60M2N-channel 600 V, 0.255 typ., 13 A MDmesh II Plus low Qg Power MOSFET in D2PAK, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABVDS @ RDS(on) 3 Order codes ID1 TJmax max2D PAKSTB18N60M2STP18N60M2 650 V 0.28 13 ATABSTW18N60M2 Extremely low gate charge3 3 Lower RDS(on) x area vs previous generation

 0.78. Size:389K  st
stw65n65dm2ag.pdf

M2 M2

STW65N65DM2AG Automotive-grade N-channel 650 V, 0.042 typ., 60 A Power MOSFET MDmesh DM2 in a TO-247 package Datasheet - production data Features R DS(on)Order code V I P DS D TOTmax. STW65N65DM2AG 650 V 0.05 60 A 446 W Designed for automotive applications and 3AEC-Q101 qualified 2 Fast-recovery body diode 1 Extremely low gate charge and inpu

 0.79. Size:1515K  st
stb13n60m2 std13n60m2.pdf

M2 M2

STB13N60M2, STD13N60M2N-channel 600 V, 0.35 typ., 11 A MDmesh II Plus low Qg Power MOSFETs in D2PAK and DPAK packagesDatasheet - production dataFeaturesOrder codes VDS @ TJmax RDS(on) max IDSTB13N60M2TAB650 V 0.38 11 ASTD13N60M2TAB33 Extremely low gate charge11 Lower RDS(on) x area vs previous generationDPAKD2PAK Low gate input resistance

 0.80. Size:575K  st
stf28n60dm2.pdf

M2 M2

STF28N60DM2 N-channel 600 V, 0.13 typ., 21 A MDmesh DM2 Power MOSFET in a TO-220FP package Datasheet - production data Features V @ R DS DS(on)Order code I P D TOTT max. Jmax.STF28N60DM2 650 V 0.16 21 A 30 W Fast-recovery body diode Extremely low gate charge and input 32capacitance 1 Low on-resistance 100% avalanche tested TO-220F

 0.81. Size:440K  st
std16n60m2.pdf

M2 M2

STD16N60M2 N-channel 600 V, 0.280 typ., 12 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) DSTD16N60M2 600 V 0.320 12 A Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected Figure 1: Internal schematic diagram Applications D(

 0.82. Size:780K  st
stw48n60m2.pdf

M2 M2

STW48N60M2 N-channel 600 V, 0.06 typ., 42 A MDmesh M2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V Jmax DS(on) DDS @ T R max I STW48N60M2 650 V 0.07 42 A Extremely low gate charge Excellent output capacitance (C ) profile OSS32 100% avalanche tested 1 Zener-protected TO-247Applications Switchin

 0.83. Size:1172K  st
std11n65m2 stp11n65m2 stu11n65m2.pdf

M2 M2

STD11N65M2, STP11N65M2, STU11N65M2N-channel 650 V, 0.6 typ., 7 A MDmesh II Plus low Qg Power MOSFETs in DPAK, TO-220 and IPAK packagesDatasheet - preliminary dataFeaturesTABTAB3Order codes VDS RDS(on) max ID1STD11N65M2DPAK3STP11N65M2 650 V 0.67 7 A21STU11N65M2TO-220TAB Extremely low gate charge Lower RDS(on) x area vs previous generation

 0.84. Size:60K  st
am2931.pdf

M2 M2

AM2931-110RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.3:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.400 x .500 2L SFL (S138).METAL/CERAMIC HERMETIC PACKAGEhermetically sealed.P 105 W MIN. WITH 6.2 dB GAINOUT =ORDER CODE BRANDINGAM2931-110 2931-110DESCRIPTIONPIN CONN

 0.85. Size:699K  st
stw37n60dm2ag.pdf

M2 M2

STW37N60DM2AG Automotive-grade N-channel 600 V, 0.094 typ., 28 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STW37N60DM2AG 600 V 0.110 28 A 210 W Designed for automotive applications and AEC-Q101 qualified 3 Fast-recovery body diode 2 Extremely low gate charge and input 1capac

 0.86. Size:1043K  st
stl9n60m2.pdf

M2 M2

STL9N60M2N-channel 600 V, 0.76 typ., 4.8 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - production dataFeaturesOrder code VDS @ TJmax RDS(on) max IDSTL9N60M2 650 V 0.86 4.8 A Extremely low gate charge Lower RDS(on) x area vs previous generation123 Low gate input resistance4 100% avalanche testedPowerFLAT 5x

 0.87. Size:460K  st
stl12n65m2.pdf

M2 M2

STL12N65M2 N-channel 650 V, 0.62 typ., 5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTL12N65M2 650 V 0.75 5 A 48 W 1 Extremely low gate charge 23 Excellent output capacitance (COSS) profile 4 100% avalanche tested Zener-protected PowerFLAT 5x6 HVAp

 0.88. Size:1267K  st
std5n60m2 stp5n60m2 stu5n60m2.pdf

M2 M2

STD5N60M2, STP5N60M2, STU5N60M2N-channel 600 V, 1.26 typ., 3.5 A MDmesh II Plus low QgPower MOSFETs in DPAK, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABOrder codes VDS @ TJmax RDS(on) max ID3STD5N60M21STP5N60M2 650 V 1.4 3.5 ADPAKSTU5N60M2TAB Extremely low gate chargeTAB Lower RDS(on) x area vs previous generation3 3 Lo

 0.89. Size:439K  st
stp16n60m2 stu16n60m2.pdf

M2 M2

STP16N60M2, STU16N60M2 N-channel 600 V, 0.28 typ., 12 A MDmesh M2 Power MOSFET in TO-220 and IPAK packages Datasheet - production data Features TABOrder code V R max. I DS DS(on) DSTP16N60M2 600 V 0.32 12 A STU16N60M2 3 2TAB1TO-220 Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested 32IPAK

 0.90. Size:938K  st
std16n65m2.pdf

M2 M2

STD16N65M2N-channel 650 V, 0.32 typ., 11 A MDmesh M2 Power MOSFET in a DPAK packageDatasheet - production dataFeaturesOrder code VDS @ TJmax RDS(on) max IDTABSTD16N65M2 710 V 0.36 11 A Extremely low gate charge32 Excellent output capacitance (Coss) profile 1 100% avalanche tested Zener-protectedDPAKApplications Switching applicationsFig

 0.91. Size:61K  st
am2729.pdf

M2 M2

AM2729-110RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.3:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE .400 x .500 2L SFL (S138)hermetically sealed.P 105 W MIN. WITH 6.5 dB GAINOUT =ORDER CODE BRANDINGAM2729-110 2729-110DESCRIPTIONPIN CONNE

 0.92. Size:322K  st
stp43n60dm2.pdf

M2 M2

STP43N60DM2 N-channel 600 V, 0.085 typ., 34 A MDmesh DM2 Power MOSFET in a TO-220 package Datasheet - production data Features V @ R DS DS(on)Order code I P D TOTTJmax. max. STP43N60DM2 650 V 0.093 34 A 250 W Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high

 0.93. Size:563K  st
stfu18n65m2.pdf

M2 M2

STFU18N65M2 N-channel 650 V, 0.275 typ., 12 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code V R max I DS DS(on) DSTFU18N65M2 650 V 0.33 12 A Extremely low gate charge Excellent output capacitance (C ) profile oss 100% avalanche tested 321 Zener-protected TO-220FPApplication

 0.94. Size:1473K  st
std9n60m2 stp9n60m2 stu9n60m2.pdf

M2 M2

STD9N60M2, STP9N60M2, STU9N60M2N-channel 600 V, 0.72 typ., 5.5 A MDmesh II Plus low Qg Power MOSFET in DPAK, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABVDS @ RDS(on) Order codes ID3TJmax max1DPAK STD9N60M2STP9N60M2 650 V 0.78 5.5 ATABSTU9N60M2TAB Extremely low gate charge3 3 Lower RDS(on) x area vs previous generation2 2

 0.95. Size:795K  st
stf18n65m2.pdf

M2 M2

STF18N65M2N-channel 650 V, 0.275 typ., 12 A MDmesh M2 Power MOSFET in a TO-220FP packageDatasheet - production dataFeaturesRDS(on) Order code VDS IDmaxSTF18N65M2 650 V 0.33 12 A Extremely low gate charge32 Excellent output capacitance (Coss) profile1 100% avalanche testedTO-220FP Zener-protectedApplications Switching applicationsF

 0.96. Size:660K  st
stf12n50m2.pdf

M2 M2

STF12N50M2N-channel 500 V, 0.325 typ.,10 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP packageDatasheet - preliminary dataFeaturesOrder code VDS RDS(on) max IDSTF12N50M2 500 V 0.38 10 A Extremely low gate charge Lower RDS(on) x area vs previous generation32 Low gate input resistance1 100% avalanche testedTO-220FP Zener-protectedAppli

 0.97. Size:429K  st
stf40n65m2.pdf

M2 M2

STF40N65M2 N-channel 650 V, 0.087 typ., 32 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I DS DS(on) DSTF40N65M2 650 V 0.099 32 A Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested 32 Zener-protected 1Applications TO-220FP Switching appl

 0.98. Size:117K  st
esm2012.pdf

M2 M2

ESM2012DVNPN DARLINGTON POWER MODULE HIGH CURRENT POWER BIPOLAR MODULE VERY LOW R JUNCTION TO CASEth SPECIFIED ACCIDENTAL OVERLOADAREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE (2500V RMS) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCEINDUSTRIAL APPLICATIONS: MOTOR CONTROL UPS DC/DC & DC/AC CONVERTERSISOTOPINTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS

 0.99. Size:109K  st
am2729-125.pdf

M2 M2

AM2729-125RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.P 125 W MIN. WITH 7.0 dB GAINOUT =.400 x .500 2LFL (S038)hermetically sealedBRANDINGORDER CODE2729-125AM2729-125DESCRIPTIONThe AM2729-125 device is a hig

 0.100. Size:1189K  st
stb40n60m2 stp40n60m2 stw40n60m2.pdf

M2 M2

STB40N60M2, STP40N60M2,STW40N60M2N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABTABOrder codes VDS @ TJmax RDS(on) max ID2STB40N60M23132 STP40N60M2 650 V 0.088 34 AD2PAK1STW40N60M2TO-220 Extremely low gate charge Lower RDS(on) x area vs previous

 0.101. Size:899K  st
stf7n65m2.pdf

M2 M2

STF7N65M2N-channel 650 V, 0.98 typ., 5 A MDmesh M2 Power MOSFET in a TO-220FP packageDatasheet - preliminary dataFeaturesRDS(on) Order code VDS max IDSTF7N65M2 650 V 1.15 5 A Extremely low gate charge32 Excellent output capacitance (Coss) profile1 100% avalanche testedTO-220FP Zener-protectedApplications Switching applicationsFigure 1

 0.102. Size:546K  st
std22nm20n.pdf

M2 M2

STD22NM20NN-CHANNEL 200V - 0.088 - 22A DPAKULTRA LOW GATE CHARGE MDmesh II MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) IDSTD22NM20N 200 V

 0.103. Size:879K  st
stf9n60m2.pdf

M2 M2

STF9N60M2, STFI9N60M2N-channel 600 V, 0.72 typ., 5.5 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP and I2PAKFP packagesDatasheet - production dataFeaturesVDS @ RDS(on) Order codes IDTJmax maxSTF9N60M2650 V 0.78 5.5 ASTFI9N60M2 Extremely low gate charge321213 Lower RDS(on) x area vs previous generationTO-220FP I2PAKFP (TO-281) Low

 0.104. Size:496K  st
stf15n60m2-ep stfi15n60m2-ep.pdf

M2 M2

STF15N60M2-EP, STFI15N60M2-EP N-channel 600 V, 0.340 typ., 11 A MDmesh M2 EP Power MOSFET in TO-220FP and IPAKFP packages Datasheet - production data Extremely low gate charge Excellent output capacitance (COSS) profile Very low turn-off switching losses 100% avalanche tested Zener-protected Applications TO-220FP I2PAKFP (TO-281) Switching

 0.105. Size:381K  st
stf12n60m2.pdf

M2 M2

STF12N60M2 N-channel 600 V, 0.395 typ., 9 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTF12N60M2 600 V 0.450 9 A 25 W Extremely low gate charge Excellent output capacitance (COSS) profile 3 100% avalanche tested 2 Zener-protected 1Applications TO-220FP Switch

 0.106. Size:534K  st
stf5n60m2.pdf

M2 M2

STF5N60M2N-channel 600 V, 1.26 typ., 3.7 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP packageDatasheet - preliminary dataFeaturesVDS @ RDS(on) Order code IDTJmax maxSTF5N60M2 650 V 1.4 3.7 A Extremely low gate charge3 Lower RDS(on) x area vs previous generation21 Low gate input resistanceTO-220FP 100% avalanche tested Zener-protec

 0.107. Size:710K  st
stf8n60dm2.pdf

M2 M2

STF8N60DM2 N-channel 600 V, 550 m typ., 8 A MDmesh DM2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTF8N60DM2 600 V 600 m 8 A 25 W Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness

 0.108. Size:1256K  st
stp13n60m2 stu13n60m2 stw13n60m2.pdf

M2 M2

STP13N60M2, STU13N60M2, STW13N60M2N-channel 600 V, 0.35 typ., 11 A MDmesh II Plus low Qg Power MOSFETs in TO-220, IPAK and TO-247 packagesDatasheet - production dataFeaturesTABTABOrder codes VDS @ TJmax RDS(on) max ID321STP13N60M2321IPAKSTU13N60M2 650 V 0.38 11 ATO-220STW13N60M2 Extremely low gate charge Lower RDS(on) x area vs previous g

 0.109. Size:525K  st
sti18n65m2 stp18n65m2.pdf

M2 M2

STI18N65M2, STP18N65M2N-channel 650 V, 0.275 typ., 12 A MDmesh M2 Power MOSFET in IPAK and TO-220 packagesDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDTABTABSTI18N65M2650V 0.33 12 ASTP18N65M23 32211 Extremely low gate chargeI2PAK TO-220 Excellent output capacitance (Coss) profile 100% avalanche tested Zener-prote

 0.110. Size:1184K  st
stb28n60m2 stp28n60m2 stw28n60m2.pdf

M2 M2

STB28N60M2, STP28N60M2, STW28N60M2N-channel 600 V, 0.135 typ., 22 A MDmesh M2 Power MOSFETs in D2PAK, TO-220 and TO-247 packagesDatasheet - production dataTAB FeaturesTABVDS @ RDS(on) Order code ID3TJmax max1321STB28N60M2D2PAKTO-220STP28N60M2 650 V 0.150 22 ASTW28N60M2 Extremely low gate charge3 Excellent output capacitance (Coss) prof

 0.111. Size:1066K  st
stf18n60m2.pdf

M2 M2

STF18N60M2N-channel 600 V, 0.255 typ., 13 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP packageDatasheet - production dataFeaturesOrder code VDS @ TJmax RDS(on) max IDSTF18N60M2 650 V 0.28 13 A Extremely low gate charge Lower RDS(on) x area vs previous generation321 Low gate input resistanceTO-220FP 100% avalanche tested Zener-protected

 0.112. Size:881K  st
stb6n65m2 std6n65m2.pdf

M2 M2

STB6N65M2, STD6N65M2N-channel 650 V, 1.2 typ., 4 A MDmesh M2 Power MOSFETs in D2PAK and DPAK packagesDatasheet - preliminary dataFeaturesOrder codes VDS RDS(on) max IDSTB6N65M2650 V 1.35 4 ATAB TABSTD6N65M2313 Extremely low gate charge1DPAK2D PAK Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protectedApp

 0.113. Size:712K  st
stw70n65m2.pdf

M2 M2

STW70N65M2 N-channel 650 V, 0.039 typ., 63 A MDmesh M2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V R max. I DS DS(on) DSTW70N65M2 650 V 0.046 63 A Extremely low gate charge Excellent output capacitance (COSS) profile 3 100% avalanche tested 2 Zener-protected 1Applications TO-247 Switching applicat

 0.114. Size:1058K  st
stf10n60m2.pdf

M2 M2

STF10N60M2, STFI10N60M2N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP and IPAKFP packagesDatasheet - production dataFeaturesRDS(on) Order codes VDS @ TJmax max IDSTF10N60M2650 V 0.6 7.5 ASTFI10N60M2 Extremely low gate charge3 Lower RDS(on) x area vs previous generation1221 3 Low gate input resistance2T

 0.115. Size:709K  st
stwa48n60dm2.pdf

M2 M2

STWA48N60DM2 N-channel 600 V, 0.065 typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 long leads package Datasheet - production data Features Order code V R max. I DS DS(on) DSTWA48N60DM2 600 V 0.079 40 A Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt rugged

 0.116. Size:447K  st
stf11n65m2-045y.pdf

M2 M2

STF11N65M2(045Y)DatasheetN-channel 650 V, 0.60 typ., 7 A MDmesh M2 Power MOSFET in a TO-220FP narrow leads packageFeaturesVDS RDS(on) max. ID PTOTOrder codeSTF11N65M2(045Y) 650 V 0.68 7 A 25 W Extremely low gate charge321 Excellent output capacitance (COSS) profileTO-220FP narrow leads 100% avalanche tested Zener-protectedD(2) Applications

 0.117. Size:1156K  st
stb6n60m2 std6n60m2.pdf

M2 M2

STB6N60M2, STD6N60M2N-channel 600 V, 1.06 typ., 4.5 A MDmesh II Plus low Qg Power MOSFET in D2PAK and DPAK packagesDatasheet - production dataFeaturesVDS @ RDS(on) Order codes IDTJmax maxTAB TABSTB6N60M2650 V 1.2 4.5 A3STD6N60M2131DPAK2 Extremely low gate chargeD PAK Lower RDS(on) x area vs previous generation Low gate input resistanc

 0.118. Size:298K  st
stl7n60m2.pdf

M2 M2

STL7N60M2 N-channel 600 V, 0.92 typ., 5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x5 package Datasheet - production data Features Order code V @ Tjmax R max I DS DS(on) DSTL7N60M2 650 V 1.05 5 A 675 Extremely low gate charge 4 Excellent output capacitance (COSS) profile 100% avalanche tested 112 Zener-protected PowerFLAT 5x5 Applic

 0.119. Size:794K  st
stb33n65m2 stf33n65m2 sti33n65m2 stp33n65m2.pdf

M2 M2

STB33N65M2, STF33N65M2,STP33N65M2, STI33N65M2N-channel 650 V, 0.117 typ., 24 A MDmesh M2 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABTABRDS(on) Order codes VDS max IDSTB33N65M233121STF33N65M2TO-220FPD2PAK650 V 0.14 24 ASTP33N65M2TAB TABSTI33N65M2 Extremely low gate charge Exce

 0.120. Size:618K  st
stp12n50m2.pdf

M2 M2

STP12N50M2N-channel 500 V, 0.325 typ.,10 A MDmesh II Plus low Qg Power MOSFET in a TO-220 packageDatasheet - preliminary dataFeaturesOrder code VDS RDS(on) max IDTABSTP12N50M2 500 V 0.38 10 A Extremely low gate charge Lower RDS(on) x area vs previous generation3 Low gate input resistance21 100% avalanche testedTO-220 Zener-protectedAppl

 0.121. Size:420K  st
stw40n65m2.pdf

M2 M2

STW40N65M2 N-channel 650 V, 0.087 typ., 32 A MDmesh M2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V R max. I DS DS(on) DSTW40N65M2 650 V 0.099 32 A Extremely low gate charge Excellent output capacitance (COSS) profile 3 100% avalanche tested 2 Zener-protected 1Applications TO-247 Switching applicat

 0.122. Size:1131K  st
stf13n60m2 stfi13n60m2.pdf

M2 M2

STF13N60M2, STFI13N60M2N-channel 600 V, 0.35 typ., 11 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP and I2PAKFP packagesDatasheet - production dataFeaturesOrder codes VDS @ TJmax RDS(on) max IDSTF13N60M2650 V 0.38 11 ASTFI13N60M232 Extremely low gate charge1123TO-220FP Lower RDS(on) x area vs previous generationI2PAKFP Low gate input r

 0.123. Size:370K  st
stu12n60m2.pdf

M2 M2

STU12N60M2 N-channel 600 V, 0.395 typ., 9 A MDmesh M2 Power MOSFET in an IPAK package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTTABSTU12N60M2 600 V 0.450 9 A 85 W Extremely low gate charge 32 Excellent output capacitance (COSS) profile 1 100% avalanche tested Zener-protected IPAKApplications Switchi

 0.124. Size:301K  st
stf11n60m2-ep.pdf

M2 M2

STF11N60M2-EPDatasheetN-channel 600 V, 0.550 typ., 7.5 A MDmesh M2 EP Power MOSFET in a TO-220FP packageFeaturesVDS RDS(on) max. IDOrder codeSTF11N60M2-EP 600 V 0.595 7.5 A Extremely low gate charge Excellent output capacitance (COSS) profile321 Very low turn-off switching losses 100% avalanche testedTO-220FP Zener-protectedD(2)Applica

 0.125. Size:704K  st
stl18n65m2.pdf

M2 M2

STL18N65M2N-channel 650 V, 0.290 typ., 8 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - preliminary dataFeaturesVDS @ Order codesTJmax RDS(on) max IDSTL18N65M2 715 V 0.365 8 A Extremely low gate charge123 Excellent output capacitance (Coss) profile4 100% avalanche testedPowerFLAT 5x6 HV Zener-protectedApplicatio

 0.126. Size:1047K  st
stb33n60m2.pdf

M2 M2

STB33N60M2N-channel 600 V, 0.108 typ., 26 A MDmesh II Plus low Qg Power MOSFETs in a D2PAK packageDatasheet - production dataFeaturesVDS @ RDS(on) TABOrder code IDTJmax maxSTB33N60M2 650 V 0.125 26 A3 Extremely low gate charge1 Lower RDS(on) x area vs previous generationD 2PAK MDmesh II technology Low gate input resistance 100% avalan

 0.127. Size:914K  st
stb28n60dm2 stp28n60dm2 stw28n60dm2.pdf

M2 M2

STB28N60DM2, STP28N60DM2, STW28N60DM2 N-channel 600 V, 0.13 typ., 21 A MDmesh DM2 Power MOSFETs in DPAK, TO-220 and TO-247 packages Datasheet - production data Features V @ R DS DS(on)Order code I P D TOTT max. Jmax.STB28N60DM2 STP28N60DM2 600 V 0.16 21 A 170 W STW28N60DM2 Fast-recovery body diode Extremely low gate charge and input capacita

 0.128. Size:308K  st
stw43n60dm2.pdf

M2 M2

STW43N60DM2 N-channel 600 V, 0.085 typ., 34 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features V @ DSR DS(on)Order code I P D TOTmax. TJmax. STW43N60DM2 650 V 0.093 34 A 250 W Fast-recovery body diode 3 Extremely low gate charge and input 2capacitance 1 Low on-resistance 100% avalanche tested TO-2

 0.129. Size:377K  st
std8n60dm2.pdf

M2 M2

STD8N60DM2DatasheetN-channel 600 V, 550 m typ., 8 A, MDmesh DM2 Power MOSFET in a DPAK packageFeaturesVDS RDS(on) max. ID PTOTOrder codeTABSTD8N60DM2 600 V 600 m 8 A 85 W321 Fast-recovery body diodeDPAK Extremely low gate charge and input capacitance Low on-resistanceD(2, TAB) 100% avalanche tested Extremely high dv/dt ruggedness Ze

 0.130. Size:972K  st
stf40n60m2 stfi40n60m2 stfw40n60m2.pdf

M2 M2

STF40N60M2, STFI40N60M2, STFW40N60M2N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packagesDatasheet - production dataFeaturesOrder codes VDS @ TJmax RDS(on) max IDSTF40N60M2STFI40N60M2 650 V 0.088 34 A321 STFW40N60M2123TO-220FPI2PAKFP (TO-281) Extremely low gate charge Lower RDS(on) x area

 0.131. Size:748K  st
std12n50m2.pdf

M2 M2

STD12N50M2N-channel 500 V, 0.325 typ.,10 A MDmesh M2 Power MOSFET in a DPAK packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTD12N50M2 500 V 0.38 10 ATAB Extremely low gate charge3 Excellent output capacitance (COSS) profile1 100% avalanche testedDPAK Zener-protectedApplications Switching applicationsFigure 1. Int

 0.132. Size:330K  st
stu6n60dm2.pdf

M2 M2

STU6N60DM2DatasheetN-channel 600 V, 0.95 typ., 5 A MDmesh DM2 Power MOSFET in an IPAK packageFeaturesVDS RDS(on) max. ID PTOTTAB Order codeSTU6N60DM2 600 V 1.10 5 A 60 W32 Fast-recovery body diode1 Extremely low gate charge and input capacitance Low on-resistanceIPAK 100% avalanche tested Extremely high dv/dt ruggednessD(2, TAB) Zen

 0.133. Size:264K  st
stp26n65dm2.pdf

M2 M2

STP26N65DM2DatasheetN-channel 650 V, 0.156 typ., 20 A, MDmesh DM2 Power MOSFET in a TO-220 packageFeaturesVDS RDS(on) max. ID PTOTOrder codeTABSTP26N65DM2 650 V 0.190 20 A 170 W Fast-recovery body diode32 Extremely low gate charge and input capacitance1 Low on-resistanceTO-220 100% avalanche tested Extremely high dv/dt ruggednessD(2, T

 0.134. Size:699K  st
stw56n65m2-4.pdf

M2 M2

STW56N65M2-4N-channel 650 V, 0.049 typ., 49 A MDmesh M2 Power MOSFET in a TO247-4 packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTW56N65M2-4 650 V 0.062 49 A Excellent switching performance thanks to the extra driving source pin Extremely low gate charge4 Excellent output capacitance (Coss) profile 32 100% avalanche tes

 0.135. Size:818K  st
stp16n65m2 stu16n65m2.pdf

M2 M2

STP16N65M2, STU16N65M2N-channel 650 V, 0.32 typ., 11 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packagesDatasheet - production dataFeaturesTABOrder code VDS @ TJmax RDS(on) max IDTABSTP16N65M2 710 V 0.36 11 ASTU16N65M2 710 V 0.36 11 A3 Extremely low gate charge23 Excellent output capacitance (Coss) profile 121 100% avalanche tested

 0.136. Size:780K  st
stf16n65m2.pdf

M2 M2

STF16N65M2N-channel 650 V, 0.32 typ., 11 A MDmesh M2 Power MOSFET in a TO-220FP packageDatasheet - production dataFeaturesOrder code VDS @ TJmax RDS(on) max IDSTF16N65M2 710 V 0.36 11 A Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested Zener-protectedApplicationsTO-220FP Switching applicationsFigure 1.

 0.137. Size:443K  st
stf13n60dm2.pdf

M2 M2

STF13N60DM2DatasheetN-channel 600 V, 0.310 typ., 11 A MDmesh DM2 Power MOSFET in a TO-220FP packageVDS RDS(on) max. IDOrder codesSTF13N60DM2 600 V 0.365 11 A Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance321 100% avalanche tested Extremely high dv/dt ruggednessTO-220FP Zener-protectedD(2)A

 0.138. Size:255K  st
stp20n60m2-ep.pdf

M2 M2

STP20N60M2-EPN-channel 600 V, 0.230 typ., 13 A MDmesh M2 EP Power MOSFET in a TO-220 packageFeaturesVDS RDS(on) max. IDOrder codeTABSTB20N60M2-EP 600 V 0.278 13 A Extremely low gate charge32 Excellent output capacitance (COSS) profile1TO-220 Very low turn-off switching losses 100% avalanche tested Zener-protectedD(2, TAB)Applications

 0.139. Size:716K  st
stwa48n60m2.pdf

M2 M2

STWA48N60M2 N-channel 600 V, 0.06 typ., 42 A MDmesh M2 Power MOSFET in a TO-247 long leads package Datasheet - production data Features Order code V DS @ TJmax. RDS(on) max. ID STWA48N60M2 650 V 0.07 42 A Extremely low gate charge Excellent output capacitance (C ) profile OSS 100% avalanche tested Zener-protected Applications Switching app

 0.140. Size:986K  st
std11n50m2 stf11n50m2 stf11n50m2.pdf

M2 M2

STD11N50M2, STF11N50M2N-channel 500 V, 0.45 typ,8 A, MDmesh II Plus low Qg Power MOSFETs in DPAK and TO-220FP packagesDatasheet - preliminary dataFeaturesOrder codes VDS @ TJmax RDS(on) max IDSTD11N50M2550 V 0.53 8 ASTF11N50M2TAB Extremely low gate charge31 Lower RDS(on) x area vs previous generation3DPAK2 Low gate input resistance1

 0.141. Size:371K  st
stf16n60m2.pdf

M2 M2

STF16N60M2 N-channel 600 V, 0.28 typ., 12 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I DS DS(on) DSTF16N60M2 600 V 0.32 12 A Extremely low gate charge Excellent output capacitance (COSS) profile 3 100% avalanche tested 2 Zener-protected 1Applications TO-220FP Switching applica

 0.142. Size:513K  st
std13n60dm2.pdf

M2 M2

STD13N60DM2DatasheetN-channel 600 V, 0.310 typ., 11 A MDmesh DM2 Power MOSFET in a DPAK packageVDS RDS(on) max. IDOrder codesTABSTD13N60DM2 600 V 0.365 11 A Fast-recovery body diode321 Extremely low gate charge and input capacitanceDPAK Low on-resistance 100% avalanche testedD(2, TAB) Extremely high dv/dt ruggedness Zener-protected

 0.143. Size:545K  st
stp13n65m2 stu13n65m2.pdf

M2 M2

STP13N65M2, STU13N65M2N-channel 650 V, 0.37 typ.,10 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packagesDatasheet - production dataFeaturesRDS(on) Order code VDS IDmaxTABSTP13N65M2TAB650 V 0.43 10ASTU13N65M232132 Extremely low gate charge1TO-220 Excellent output capacitance (Coss) profileIPAK 100% avalanche tested Zener-pr

 0.144. Size:461K  st
stl12n60m2.pdf

M2 M2

STL12N60M2 N-channel 600 V, 0.400 typ., 6.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTL12N60M2 600 V 0.495 6.5 A 52 W 1 Extremely low gate charge 23 Excellent output capacitance (COSS) profile 4 100% avalanche tested Zener-protected PowerFLAT 5x6 HV

 0.145. Size:841K  st
std9n40m2.pdf

M2 M2

STD9N40M2N-channel 400 V, 0.59 typ., 6 A MDmesh II Plus low Qg Power MOSFET in a DPAK packageDatasheet - preliminary dataFeaturesOrder code VDS @ TJmax RDS(on) max IDSTD9N40M2 450 V 0.8 6 ATAB Extremely low gate charge3 Lower RDS(on) x area vs previous generation1 Low gate input resistanceDPAK 100% avalanche tested Zener-protectedApplica

 0.146. Size:451K  st
stp13n60dm2.pdf

M2 M2

STP13N60DM2DatasheetN-channel 600 V, 0.310 typ., 11 A MDmesh DM2 Power MOSFET in a TO-220 packageFeaturesVDS RDS(on ) max. IDOrder codeTABSTP13N60DM2 600 V 0.365 11 A Fast-recovery body diode32 Extremely low gate charge and input capacitance1 Low on-resistanceTO-220 100% avalanche tested Extremely high dv/dt ruggednessD(2, TAB) Ze

 0.147. Size:883K  st
stf28n60m2 stfi28n60m2.pdf

M2 M2

STF28N60M2, STFI28N60M2N-channel 600 V, 0.135 typ., 22 A MDmesh M2 Power MOSFETs in TO-220FP and I2PAKFP packagesDatasheet - production dataFeaturesOrder code VDS @ TJmax RDS(on) max IDSTF28N60M2650 V 0.150 22 ASTFI28N60M23 Extremely low gate charge21 Excellent output capacitance (Coss) profile TO-220FP 123 100% avalanche tested2I PAKFP

 0.148. Size:815K  st
stf24n60dm2.pdf

M2 M2

STF24N60DM2N-channel 600 V, 0.175 typ., 18 A MDmesh DM2 Power MOSFET in a TO-220FP packageDatasheet - production dataFeaturesVDS @ RDS(on) Order code IDTJmax maxSTF24N60DM2 650 V 0.20 18 A Fast-recovery body diode Extremely low gate charge and input 321 capacitanceTO-220FP Low on-resistance 100% avalanche tested Extremely high dv/dt rugg

 0.149. Size:788K  st
std15n50m2ag.pdf

M2 M2

STD15N50M2AG Automotive-grade N-channel 500 V, 0.336 typ., 10 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features R DS(on)Order code V I P DS D TOTmax. STD15N50M2AG 500 V 0.380 10 A 85 W Designed for automotive applications and AEC-Q101 qualified Extremely low gate charge Excellent output capacitance (C ) profile OSS

 0.150. Size:717K  st
stw48n60dm2.pdf

M2 M2

STW48N60DM2 N-channel 600 V, 0.065 typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V R max. I DS DS(on) DSTW48N60DM2 600 V 0.079 40 A Fast-recovery body diode Extremely low gate charge and input 3capacitance 2 Low on-resistance 1 100% avalanche tested Extremely high dv/dt ruggedness

 0.151. Size:1352K  st
std9n65m2 stf9n65m2 stp9n65m2 stu9n65m2.pdf

M2 M2

STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2N-channel 650 V, 0.79 typ., 5 A MDmesh M2 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABRDS(on) Order codes VDS max ID31DPAK STD9N65M2321 STF9N65M2650 V 0.9 5 ASTP9N65M2TO-220FPTAB STU9N65M2TAB Extremely low gate charge32 Excellent output capacit

 0.152. Size:564K  st
stf13n65m2 stfi13n65m2.pdf

M2 M2

STF13N65M2, STFI13N65M2N-channel 650 V, 0.37 typ., 10 A MDmesh M2 PowerMOSFETs in TO-220FP and IPAKFP packagesDatasheet - production dataFeaturesRDS(on) Order code VDS max IDSTF13N65M2650 V 0.43 10ASTFI13N65M2 Extremely low gate charge321213 Excellent output capacitance (Coss) profileTO-220FP I2PAKFP (TO-281) 100% avalanche tested

 0.153. Size:760K  st
std11n50m2 stf11n50m2.pdf

M2 M2

STD11N50M2, STF11N50M2DatasheetN-channel 500 V, 0.45 typ., 8 A MDmesh M2 Power MOSFETs in DPAK and TO-220FP packagesFeaturesVDS @ TJmax RDS(on)max. IDOrder code PackageTABSTD11N50M2 DPAK3550 V 0.53 8 A2STF11N50M2 TO-220FP1321 Extremely low gate chargeDPAK TO-220FP Excellent output capacitance (COSS) profile 100% avalanche tested Zen

 0.154. Size:879K  st
stf9n60m2 stfi9n60m2.pdf

M2 M2

STF9N60M2, STFI9N60M2N-channel 600 V, 0.72 typ., 5.5 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP and I2PAKFP packagesDatasheet - production dataFeaturesVDS @ RDS(on) Order codes IDTJmax maxSTF9N60M2650 V 0.78 5.5 ASTFI9N60M2 Extremely low gate charge321213 Lower RDS(on) x area vs previous generationTO-220FP I2PAKFP (TO-281) Low

 0.155. Size:519K  st
std13n50dm2ag.pdf

M2 M2

STD13N50DM2AGDatasheetAutomotive-grade N-channel 500 V, 320 m typ., 11 A MDmesh DM2 Power MOSFET in a DPAK packageFeaturesVDS RDS(on ) max. IDOrder codeTABSTD13N50DM2AG 500 V 360 m 11 A321DPAK AEC-Q101 qualified Fast-recovery body diode Extremely low gate charge and input capacitanceD(2, TAB) Low on-resistance 100% avalanche tested E

 0.156. Size:641K  st
stfu16n65m2.pdf

M2 M2

STFU16N65M2 N-channel 650 V, 0.32 typ., 11 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code V R max I DS DS(on) DSTFU16N65M2 650 V 0.36 11 A Extremely low gate charge Excellent output capacitance (C ) profile OSS 100% avalanche tested 321 Zener-protected TO-220FPApplications

 0.157. Size:940K  st
stl18n60m2.pdf

M2 M2

STL18N60M2N-channel 600 V, 0.278 typ., 9 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - production dataFeaturesVDS @ Order codeTJmax RDS(on) max IDSTL18N60M2 650 V 0.308 9 A Extremely low gate charge123 Lower RDS(on) x area vs previous generation4 Low gate input resistancePowerFLAT 5x6 HV 100% avalanche

 0.158. Size:407K  st
stl20nm20n.pdf

M2 M2

STL20NM20NN-CHANNEL 200V - 0.088 - 20A PowerFLATULTRA LOW GATE CHARGE MDmesh II MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) IDSTL20NM20N 200 V

 0.159. Size:1195K  st
stb24n60dm2 stp24n60dm2 stw24n60dm2.pdf

M2 M2

STB24N60DM2, STP24N60DM2, STW24N60DM2N-channel 600 V, 0.175 typ., 18 A FDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTAB TABVDS @ RDS(on) 2Order codes ID3 TJmax max13STB24N60DM2D2PAK21STP24N60DM2 650 V 0.20 18 ATO-220STW24N60DM2 Extremely low gate charge and input capacitance32

 0.160. Size:837K  st
stf12n65m2.pdf

M2 M2

STF12N65M2N-channel 650 V, 0.42 typ., 8 A MDmesh M2Power MOSFET in a TO-220FP packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTF12N65M2 650 V 0.5 8 A Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested3 2 Zener-protected1 ApplicationsTO-220FP Switching applicationsFigure

 0.161. Size:866K  st
stf11n65m2 stf11n65m2 stfi11n65m2.pdf

M2 M2

STF11N65M2, STFI11N65M2N-channel 650 V, 0.6 typ., 7 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP and I2PAKFP packagesDatasheet - preliminary dataFeaturesOrder codes VDS RDS(on) max IDSTF11N65M2650 V 0.67 7 ASTFI11N65M2 Extremely low gate charge3 Lower RDS(on) x area vs previous generation12231 Low gate input resistance2TO-220FPI P

 0.162. Size:1199K  st
std7n60m2 stp7n60m2 stu7n60m2.pdf

M2 M2

STD7N60M2, STP7N60M2, STU7N60M2N-channel 600 V, 0.86 typ., 5 A MDmesh II Plus low Qg Power MOSFET in DPAK, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABVDS @ RDS(on) Order codes ID3TJmax max1STD7N60M2DPAKSTP7N60M2 650 V 0.95 5 ATABSTU7N60M2TAB Extremely low gate charge332 Lower RDS(on) x area vs previous generation21

 0.163. Size:735K  st
stf11n65m2 stfi11n65m2.pdf

M2 M2

STF11N65M2, STFI11N65M2 N-channel 650 V, 0.6 typ., 7 A MDmesh M2 Power MOSFETs in TO-220FP and IPAKFP packages Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTF11N65M2 650 V 0.68 7 A 25 W STFI11N65M2 Extremely low gate charge TO-220FP I2PAKFP (TO-281) Excellent output capacitance (C ) profile OSS 100% avalanche teste

 0.164. Size:386K  st
std5n60dm2.pdf

M2 M2

STD5N60DM2DatasheetN-channel 600 V, 1.38 typ., 3.5 A MDmesh DM2 Power MOSFET in a DPAK packageFeaturesVDS RDS(on) max. ID PTOTOrder codeTABSTD5N60DM2 600 V 1.55 3.5 A 45 W321 Fast-recovery body diodeDPAK Extremely low gate charge and input capacitance Low on-resistanceD(2, TAB) 100% avalanche tested Extremely high dv/dt ruggedness

 0.165. Size:492K  st
std9hn65m2.pdf

M2 M2

STD9HN65M2 N-channel 600 V, 0.71 typ., 5.5 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) DSTD9HN65M2 600 V 0.82 5.5 A Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected Figure 1: Internal schematic diagram Applications D(

 0.166. Size:761K  st
stb35n60dm2.pdf

M2 M2

STB35N60DM2 N-channel 600 V, 0.094 typ., 28 A MDmesh DM2 Power MOSFET in a DPAK package Datasheet - production data Features R DS(on)Order code VDS ID PTOT TAB max. STB35N60DM2 600 V 0.110 28 A 210 W 3 Fast-recovery body diode 1 Extremely low gate charge and input capacitance Low on-resistance D2PAK 100% avalanche tested Extremely

 0.167. Size:1287K  st
stl24n60m2.pdf

M2 M2

STL24N60M2N-channel 600 V, 0.186 typ., 18 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 8x8 HV packageDatasheet - production dataFeaturesOrder code VDS @ TJmax RDS(on) max IDS(2) Bottom viewS(2)S(2)STL24N60M2 650 V 0.21 18 AG(1)D(3) Extremely low gate charge Lower RDS(on) x area vs previous generation Low gate input resistancePowerFLAT

 0.168. Size:850K  st
stl33n60m2.pdf

M2 M2

STL33N60M2 N-channel 600 V, 0.115 typ., 22 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - production data Features Order code VDS @ T R I Jmax DS(on)max DSTL33N60M2 650 V 0.135 22 A Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested Zener-protected Applications Switching app

 0.169. Size:912K  st
stb33n60dm2 stp33n60dm2 stw33n60dm2.pdf

M2 M2

STB33N60DM2, STP33N60DM2, STW33N60DM2 N-channel 600 V, 0.110 typ., 24 A MDmesh DM2 Power MOSFET in DPAK, TO-220 and TO-247 packages Datasheet - production data Features Order code V @ T R max. I DS Jmax. DS(on) DSTB33N60DM2 650 V 0.130 24 A STP33N60DM2 650 V 0.130 24 A STW33N60DM2 650 V 0.130 24 A Fast-recovery body diode Extremely low gate charg

 0.170. Size:778K  st
stl33n60dm2.pdf

M2 M2

STL33N60DM2 N-channel 600 V, 0.115 typ., 21 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - production data Features VDS @ Order code RDS(on)max ID T Jmax5STL33N60DM2 650 V 0.140 21 A 432 Fast-recovery body diode 1 Extremely low gate charge and input capacitance Low on-resistance PowerFLAT 8x8 HV 100% ava

 0.171. Size:53K  renesas
r07ds0531ej rjh60m2dpe.pdf

M2 M2

Preliminary DatasheetRJH60M2DPE R07DS0531EJ0100600 V - 12 A - IGBT Rev.1.00Application: Inverter Aug 30, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno

 0.172. Size:54K  renesas
r07ds0530ej rjh60m2dpp.pdf

M2 M2

Preliminary DatasheetRJH60M2DPP-M0 R07DS0530EJ0100600 V - 12 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec

 0.173. Size:151K  renesas
rjk03m2dpa.pdf

M2 M2

Preliminary Datasheet RJK03M2DPA 30V, 45A, 2.8mmax. R07DS0766EJ0200N Channel Power MOS FET Rev.2.00High Speed Power Switching Feb 12, 2013Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DE-A(Package nam

 0.174. Size:101K  renesas
rjh60m2dpp-m0.pdf

M2 M2

Preliminary Datasheet RJH60M2DPP-M0 R07DS0530EJ0300600V - 12A - IGBT Rev.3.00Application: Inverter May 25, 2012Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (85 ns typ.) in one package Trench gate and thin wafer tech

 0.175. Size:96K  renesas
rjh60m2dpe.pdf

M2 M2

Preliminary Datasheet RJH60M2DPE R07DS0531EJ0300600V - 12A - IGBT Rev.3.00Application: Inverter May 25, 2012Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (85 ns typ.) in one package Trench gate and thin wafer technol

 0.176. Size:134K  renesas
rej03g1492 rqm2201dnsds.pdf

M2 M2

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.177. Size:703K  fairchild semi
irfm210btf fp001.pdf

M2 M2

November 2001IRFM210B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.77A, 200V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 7.2 nC)planar, DMOS technology. Low Crss ( typical 6.8 pF)This advanced technology has been especially tailored to Fas

 0.178. Size:280K  fairchild semi
fdfm2p110.pdf

M2 M2

August 2005FDFM2P110Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description ApplicationsFDFM2P110 combines the exceptional performance of Buck BoostFairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a FeaturesMicroFET package. This device is designed specifically as a single package -3.5 A

 0.179. Size:2023K  fairchild semi
fsam20sh60a.pdf

M2 M2

FSAM20SH60ASPMTM (Smart Power Module)General Description FeaturesFSAM20SH60A is an advanced smart power module UL Certified No. E209204(SPM) that Fairchild has newly developed and designed to 600V-20A 3-phase IGBT inverter bridge including controlprovide very compact and high performance ac motorICs for gate driving and protection drives mainly targeting high speed low-pow

 0.180. Size:726K  fairchild semi
irfm220btf fp001.pdf

M2 M2

November 2001IRFM220B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.13A, 200V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to Fast

 0.181. Size:286K  fairchild semi
fdfm2n111.pdf

M2 M2

August 2005FDFM2N111Integrated N-Channel PowerTrench MOSFET and Schottky Diode General Description ApplicationsFDFM2N111 combines the exceptional performance of Standard Buck ConverterFairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a FeaturesMicroFET package. This device is designed specifically as a single pack

 0.182. Size:267K  fairchild semi
irlm210a.pdf

M2 M2

IRLM210AAdvanced Power MOSFETFEATURESBVDSS = 200 Vn Avalanche Rugged TechnologyRDS(on) = 1.5 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = 0.77 An Improved Gate Chargen Extended Safe Operating AreaSOT-223n Lower Leakage Current : 10 A(Max.) @ VDS = 200V2n Lower RDS(ON) : 1.185 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum Ratings

 0.183. Size:242K  fairchild semi
irlm220a.pdf

M2 M2

IRLM220AAdvanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.13 A Improved Gate Charge Extended Safe Operating AreaSOT-223 Lower Leakage Current : 10 A(Max.) @ VDS = 200V2 Lower RDS(ON) : 0.609 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum R

 0.184. Size:2339K  fairchild semi
fsam20sm60a.pdf

M2 M2

FSAM20SM60ASPMTM (Smart Power Module)General Description FeaturesFSAM20SM60A is an advanced smart power module UL Certified No. E209204(SPM) that Fairchild has newly developed and designed to 600V-20A 3-phase IGBT inverter bridge including controlprovide very compact and high performance ac motorICs for gate driving and protection drives mainly targeting medium speed low-p

 0.185. Size:18K  nec
2sc5653 ne687m23.pdf

M2 M2

PRELIMINARY DATA SHEETNPN SILICON TRANSISTOR NE687M23OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE: World's smallest transistor package footprint leads are completely underneath package body0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance0.251 HIGH GAIN BANDWIDTH PRODUCT:fT =

 0.186. Size:19K  nec
2sc5649 ne856m23.pdf

M2 M2

PRELIMINARY DATA SHEETNPN SILICON TRANSISTOR NE856M23OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE: World's smallest transistor package footprint leads are completely underneath package body0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance0.251 LOW NOISE FIGURE:NF = 1.4 dB at

 0.187. Size:18K  nec
2sc5652 ne685m23.pdf

M2 M2

PRELIMINARY DATA SHEETNPN SILICON TRANSISTOR NE685M23OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE: World's smallest transistor package footprint leads are completely underneath package body0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance0.251 HIGH GAIN BANDWIDTH PRODUCT:fT =

 0.188. Size:18K  nec
2sc5650 ne681m23.pdf

M2 M2

PRELIMINARY DATA SHEETNPN SILICON TRANSISTOR NE681M23OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE: World's smallest transistor package footprint leads are completely underneath package body0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance0.25 HIGH GAIN BANDWIDTH PRODUCT: 1fT =

 0.189. Size:19K  nec
2sc5651 ne688m23.pdf

M2 M2

PRELIMINARY DATA SHEETNPN SILICON TRANSISTOR NE688M23OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M03 NEW MINIATURE M23 PACKAGE: World's smallest transistor package footprint leads are completely underneath package body0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance HIGH GAIN BANDWIDTH PRODUCT:0.251fT =

 0.190. Size:121K  njs
10am20.pdf

M2

 0.191. Size:60K  njs
irfm254.pdf

M2

 0.192. Size:85K  njs
mtm25n10.pdf

M2 M2

 0.193. Size:849K  njs
d84dm2 d84dn2.pdf

M2 M2

 0.194. Size:95K  njs
mtm2n85 mtm2n90 mtp2n90.pdf

M2 M2

 0.195. Size:52K  njs
mtm24n50.pdf

M2

 0.196. Size:721K  nxp
buk9m24-40e.pdf

M2 M2

BUK9M24-40EN-channel 40 V, 24 m logic level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetit

 0.197. Size:278K  nxp
buk7m20-40h.pdf

M2 M2

BUK7M20-40HN-channel 40 V, 20.0 m standard level MOSFET in LFPAK3329 January 2019 Product data sheet1. General descriptionAutomotive qualified standard level N-channel MOSFET in an LFPAK33 package using Trench 9TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in highperformance automotive applications.2. Features and benefits Fully aut

 0.198. Size:721K  nxp
buk7m21-40e.pdf

M2 M2

BUK7M21-40EN-channel 40 V, 21 m standard level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK33 (Power33) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 Compliant R

 0.199. Size:720K  nxp
buk9m24-60e.pdf

M2 M2

BUK9M24-60EN-channel 60 V, 24 m logic level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetit

 0.200. Size:280K  nxp
buk9m20-40h.pdf

M2 M2

BUK9M20-40HN-channel 40 V, 20.0 m logic level MOSFET in LFPAK3329 January 2019 Product data sheet1. General descriptionAutomotive qualified logic level N-channel MOSFET in an LFPAK33 package using Trench 9TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in highperformance automotive applications.2. Features and benefits Fully automotiv

 0.201. Size:712K  nxp
buk7m27-80e.pdf

M2 M2

BUK7M27-80EN-channel 80 V, 27 m standard level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK33 (Power33) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 Compliant R

 0.202. Size:713K  nxp
buk7m22-80e.pdf

M2 M2

BUK7M22-80EN-channel 80 V, 22 m standard level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK33 (Power33) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 Compliant R

 0.203. Size:723K  nxp
buk9m28-80e.pdf

M2 M2

BUK9M28-80EN-channel 80 V, 28 m logic level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetit

 0.204. Size:957K  samsung
irfm220a.pdf

M2 M2

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.13 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V2 Low RDS(ON) : 0.626 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

 0.205. Size:973K  samsung
irfm214a.pdf

M2 M2

Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 0.64 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V2 Lower RDS(ON) : 1.393 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic

 0.206. Size:949K  samsung
irfm210a.pdf

M2 M2

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 0.77 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V2 Low RDS(ON) : 1.169 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

 0.207. Size:966K  samsung
irfm224a.pdf

M2 M2

Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 1.1 Rugged Gate Oxide Technology Lower Input CapacitanceID = 0.92 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V2 Low RDS(ON) : 0.742 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

 0.208. Size:66K  siemens
bsm25gal120dn2.pdf

M2 M2

BSM 25 GAL 120 DN2IGBT Power Module Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 25 GAL 120 DN2 1200V 38A HALF BRIDGE GAL 1 C67076-A2009-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200

 0.209. Size:96K  rohm
sh8m24.pdf

M2 M2

4V Drive Nch+Pch MOSFET SH8M24 Structure Dimensions (Unit : mm) Silicon N-channel / P-channel MOSFET SOP8Features 1) Low on-resistance. 2) Built-in G-S protection diode. 3) Small surface mount package (SOP8). Application Switching Each lead has same dimensionsPackaging specifications Inner circuit (8) (7) (6) (5)Package TapingType Code TBBasic

 0.210. Size:58K  rohm
us6m2.pdf

M2 M2

US6M2 Transistors 2.5V Drive Nch+Pch MOSFET US6M2 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET / TUMT6Silicon P-channel MOSFET Features 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in G-S Protection Diode. Abbreviated symbol : M02 ApplicationsSwitching

 0.211. Size:266K  rohm
em6m2.pdf

M2 M2

1.2V Drive Nch+Pch MOSFET EM6M2 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET / EMT6Silicon P-channel MOSFET Features 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (1.2V drive). 4) Built-in G-S Protection Diode. Each lead has same dimensionsAbbreviated symbol : M02 Applications Inner circuit Switch

 0.212. Size:2455K  rohm
sp8m24fra.pdf

M2 M2

SP8M24FRADatasheet45V Nch+Pch Power MOSFETlOutlinelTr1:Nch Tr2:PchSymbolVDSS 45V -45V SOP8RDS(on)(Max.) 46m 63mID 4.5A 3.5APD 2.0W lFeaturesllInner circuitl1) Low on - resistance2) Small Surface Mount Package (SOP8)3) Pb-free lead plating ; RoHS compliant4) Halogen Free5) AEC-Q101 QualifiedlPa

 0.213. Size:970K  rohm
sp8m21fra.pdf

M2 M2

SP8M21SP8M21FRATransistorsAEC-Q101 Qualified4V Drive Nch+Pch MOSFETSP8M21SP8M21FRA Structure Dimensions (Unit : mm)Silicon N-channel MOSFET / SOP8Silicon P-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S protection diode. 3) Small and surface mount package (SOP8). Each lead has same dimensions ApplicationsSwitching Package specifications Inn

 0.214. Size:194K  rohm
tt8m2.pdf

M2 M2

2.5V Drive Nch MOSFET 1.5V Drive Pch MOSFET TT8M2 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET/ TSST8Silicon P-channel MOSFET (8) (7) (6) (5) Features 1) Low on-state resistance. (1) (2) (3) (4)2) Low voltage drive. 3) High power package. Abbreviated symbol : M02Each lead has same dimensions Application Inner circuit Switching (8) (7) (6) (5)

 0.215. Size:112K  vishay
smm2348es.pdf

M2 M2

SMM2348ESwww.vishay.comVishay SiliconixMedical N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY High Quality Manufacturing Process UsingVDS (V) 30SMM Process FlowRDS(on) () at VGS = 10 V 0.024 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.032 100 % Rg and UIS TestedID (A) 8 Material categorization:Configuration SingleFor definiti

 0.216. Size:158K  vishay
sum25p10-138.pdf

M2 M2

SUM25P10-138Vishay SiliconixP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)c Qg (Typ.) 100 % Rg and UIS Tested0.138 at VGS = - 10 V - 16.3 Material categorization:0.141 at VGS = - 7.5 V - 16.1 24 nCFor definitions of compliance please see- 100www.vishay.com/doc?999120.142 at VGS = - 6 V - 16.

 0.217. Size:170K  vishay
sqm25n15-52.pdf

M2 M2

SQM25N15-52www.vishay.comVishay SiliconixAutomotive N-Channel 150 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 150 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.052 100 % Rg and UIS TestedID (A) 25 AEC-Q101 QualifieddConfiguration Single Material categorization:For definitions of compliance pleas

 0.218. Size:165K  vishay
sum90n08-6m2p.pdf

M2 M2

SUM90N08-6m2PVishay SiliconixN-Channel 75-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A) Qg (Typ) 175 C Junction Temperature0.0062 at VGS = 10 V75 RoHS90d 75 100 % Rg and UIS Tested COMPLIANTAPPLICATIONS Power Supply- Secondary Synchronous Rectification IndustrialDTO-263 GG D S Top Vie

 0.219. Size:134K  vishay
sqm200n04-1m1l.pdf

M2 M2

SQM200N04-1m1Lwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0011 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.0013 AEC-Q101 QualifieddID (A) 200 Material categorization:Configuration Sin

 0.220. Size:152K  vishay
sqd100n03-3m2l.pdf

M2 M2

SQD100N03-3m2Lwww.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURES TrenchFET Power MOSFETPRODUCT SUMMARY 100 % Rg and UIS TestedVDS (V) 30 AEC-Q101 QualifieddRDS(on) () at VGS = 10 V 0.0032 Material categorization:RDS(on) () at VGS = 4.5 V 0.0039For definitions of compliance please seeID (A) 100www.vishay.com/doc?

 0.221. Size:177K  vishay
sum90n03-2m2p.pdf

M2 M2

SUM90N03-2m2PVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested Material categorization:0.0022 at VGS = 10 V 9030 82 nCFor definitions of compliance please see0.0027 at VGS = 4.5 V 90www.vishay.com/doc?99912TO-263APPLICATIONSD OR-ing

 0.222. Size:180K  vishay
sup90n08-8m2p.pdf

M2 M2

SUP90N08-8m2PVishay SiliconixN-Channel 75 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) RDS(on) () ID (A) Qg (Typ) 175 C Junction Temperature75 0.0082 at VGS = 10 V 100 % Rg and UIS Tested90d 58 Material categorization:For definitions of compliance please seewww.vishay.com/doc?99912TO-220AB APPLICATIONS Power S

 0.223. Size:164K  vishay
sum27n20-78.pdf

M2 M2

SUM27N20-78Vishay SiliconixN-Channel 200 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.078 at VGS = 10 V 27 Low Thermal Resistance Package2000.083 at VGS = 6 V 26 PWM Optimized for Fast Switching Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-263 Is

 0.224. Size:168K  vishay
sqm200n04-1m7l.pdf

M2 M2

SQM200N04-1m7Lwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 40 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.0017 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V 0.0020 AEC-Q101 qualified dID (A) 200Configuration Single Material categorization:

 0.225. Size:162K  vishay
sum90n10-8m2p.pdf

M2 M2

SUM90N10-8m2PVishay SiliconixN Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) RDS(on) () ID (A) Qg (Typ) 175 C Junction TemperatureRoHS0.0082 at VGS = 10 V100COMPLIANT90d 97 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Supply- Secondary Synchronous Rectification

 0.226. Size:170K  vishay
sqm200n04-1m8.pdf

M2 M2

SQM200N04-1m8www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 40 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.0018 100 % Rg and UIS testedID (A) 200 AEC-Q101 qualified dConfiguration SinglePackage TO-263-7L Material categorization: for definitions

 0.227. Size:167K  vishay
sum23n15-73.pdf

M2 M2

SUM23N15-73Vishay SiliconixN-Channel 150 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.073 at VGS = 10 V 23 Low Thermal Resistance Package1500.077 at VGS = 6 V 22.5 PWM Optimized Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchTO-2

 0.228. Size:66K  central
pn2906-a pm2907-a.pdf

M2 M2

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 0.229. Size:343K  central
cmpdm202ph.pdf

M2 M2

CMPDM202PHSURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMPDM202PH SILICON MOSFETis a High Current P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers High Current, Low rDS(ON), Low Threshold Volta

 0.230. Size:793K  central
cdm22010-650.pdf

M2 M2

CDM22010-650www.centralsemi.comSILICON N-CHANNEL POWER MOSFETDESCRIPTION:10 AMP, 650 VOLTThe CENTRAL SEMICONDUCTOR CDM22010-650 is a high current, 650 Volt N-Channel power MOSFET designed for high voltage, fast switching applications such as Power Factor Correction (PFC), lighting and power inverters. This MOSFET combines high voltage capability with low rDS(ON), low thres

 0.231. Size:343K  central
cmpdm203nh.pdf

M2 M2

CMPDM203NHSURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMPDM203NH SILICON MOSFETis a High Current N-Channel Enhancement-mode Silicon MOSFET, manufactured by the N-Channel DMOS Process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers High Current, Low rDS(ON), Low Threshold Volta

 0.232. Size:596K  diodes
dmp22m2ups.pdf

M2 M2

DMP22M2UPS Green20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package Cooler Running Applications BVDSS RDS(ON) max TC = +25C High Conversion Efficiency Low RDS(ON) Minimizes On State Losses 2.5m @ VGS = -10V -60A -20V

 0.233. Size:434K  infineon
auirl7766m2tr.pdf

M2 M2

AUTOMOTIVE GRADE AUIRL7766M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 100V Optimized for Automotive DC-DC and other Heavy Load Applications RDS(on) typ. 8.0m Logic Level Gate Drive max. 10m Exceptionally Small Footprint and Low Profile ID (Silicon Limited) 51A High Power Density Qg (typical) 44nC L

 0.234. Size:497K  infineon
auirf8736m2tr.pdf

M2 M2

AUTOMOTIVE GRADE AUIRF8736M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 1.3m other Heavy Load Applications max. 1.9m Exceptionally Small Footprint and Low Profile High Power Density ID (Silicon Limited) 137A Low Parasitic Paramete

 0.235. Size:432K  infineon
auirf7648m2tr.pdf

M2 M2

AUTOMOTIVE GRADE AUIRF7648M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 60V Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 5.5m Exceptionally Small Footprint and Low Profile max. 7.0m High Power Density ID (Silicon Limited) 68A Low Parasitic Parameters Qg (typic

 0.236. Size:434K  infineon
auirl7736m2tr.pdf

M2 M2

AUTOMOTIVE GRADE AUIRL7736M2TR Automotive DirectFET Power MOSFET Logic LevelV(BR)DSS 40V Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 2.2m other Heavy Load Applications max. 3.0m Exceptionally Small Footprint and Low Profile ID (Silicon Limited) 112A High Power Density Qg (typical) 52nC

 0.237. Size:426K  infineon
auirf7675m2tr.pdf

M2 M2

AUTOMOTIVE GRADE AUIRF7675M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 150V Optimized for Class D Audio Amplifier Applications Low Rds(on) for Improved Efficiency RDS(on) typ. 47m Low Qg for Better THD and Improved Efficiency max. 56m Low Qrr for Better THD and Lower EMI Rg (typical) 1.2 Low Parasiti

 0.238. Size:523K  infineon
igcm20f60ha.pdf

M2 M2

D a t a S h e e t , Aug. 2010 Control Integrated POwer System (CIPOS) IGCM2 0F60HA http://www.lspst.com F o r P o w e r M a n a g e m e n t A p p l i c a t i o n CIPOS IGCM20F60HA Revision History: 2010-08 Ver.1.1 Previous Version: Datasheet Ver. 1.0 Page Subjects (major changes since last revision) 11 tFLTCLR Authors: Junho Song, Junbae Lee and Daewoong Chung E

 0.239. Size:244K  infineon
bsm200gb120dlc.pdf

M2 M2

Technische Information / technical informationIGBT-ModuleBSM200GB120DLCIGBT-modules62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emitter voltageKollektor-Dauergleichstro

 0.240. Size:432K  infineon
auirf7734m2 auirf7734m2tr.pdf

M2 M2

AUTOMOTIVE GRADE AUIRF7734M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 3.8m Exceptionally Small Footprint and Low Profile max. 4.9m High Power Density ID (Silicon Limited) 72A Low Parasitic Parameters Qg (typic

 0.241. Size:532K  infineon
igcm20f60ga.pdf

M2 M2

D a t a S h e e t , Aug. 2010 Control Integrated POwer System (CIPOS) IGCM2 0F60G A http://www.lspst.com F o r P o w e r M a n a g e m e n t A p p l i c a t i o n CIPOS IGCM20F60GA Revision History: 2010-08 Ver.1.1 Previous Version: Datasheet Ver. 1.0 Page Subjects (major changes since last revision) 11 tFLTCLR Authors: Junho Song, Junbae Lee and Daewoong Chung

 0.242. Size:439K  infineon
auirf7736m2tr.pdf

M2 M2

AUTOMOTIVE GRADE AUIRF7736M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 2.5m Exceptionally Small Footprint and Low Profile max. 3.0m High Power Density ID (Silicon Limited) 108A Low Parasitic Parameters Qg (typi

 0.243. Size:524K  infineon
irf60dm206.pdf

M2 M2

StrongIRFET IRF60DM206 DirectFET N-Channel Power MOSFET Application Brushed motor drive applications VDSS 60V BLDC motor drive applications RDS(on) typ. Battery powered circuits 2.2m Half-bridge and full-bridge topologies max 2.9m Synchronous rectifier applications Resonant mode power supplies ID 130A

 0.244. Size:158K  ixys
ixfh21n50 ixfh24n50 ixfh26n50 ixfm21n50 ixfm24n50 ixfm26n50 ixft24n50 ixft26n50.pdf

M2 M2

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM21N50 500 V 21 A 0.25 Power MOSFETsIXFH/IXFM/IXFT24N50 500 V 24 A 0.23 IXFH/IXFT26N50 500 V 26 A 0.20 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr 250 ns TO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to

 0.246. Size:316K  ixys
ixth15n60 ixtm15n60 ixth20n60 ixtm20n60.pdf

M2 M2

Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine

 0.247. Size:105K  ixys
ixth20n60 ixtm20n60.pdf

M2 M2

IXTH 20N60 VDSS = 600 VMegaMOSTMFETIXTM 20N60 ID25 = 20 ARDS(on) = 0.35 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C 15N60 15 ATO-204 AE (IXTM)20N60 20 AIDM TC = 25C, p

 0.248. Size:217K  ixys
vwm270-0075x2.pdf

M2 M2

VWM 270-0075X2VDSS = 75 VThree phase full bridgeID25 = 270 Awith Trench MOSFETsRDS(on) = 2.1 mL+G3 G5T1 T3 T5G1S3S5S1L1L2L3G4 G6T2 T4 T6G2S4S6S2L-ApplicationsMOSFET T1 - T6AC drivesSymbol Conditions Maximum Ratings in automobilesVDSS TVJ = 25C to 150C 75 V - electric power steering VGS 20 V - starter generator in indu

 0.249. Size:297K  ixys
ixsh25n100 ixsm25n100 ixsh25n100a ixsm25n100a.pdf

M2 M2

Datasheet.Live

 0.250. Size:76K  ixys
ixgm25n100.pdf

M2 M2

VCES IC25 VCE(sat)Low VCE(sat) IXGH/IXGM 25 N100 1000 V 50 A 3.5 VHigh speed IGBT IXGH/IXGM 25 N100A 1000 V 50 A 4.0 VSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 M 1000 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C50 AIC90 TC = 90C25 A TO-204 AE (IXGM)ICM TC = 25C, 1 m

 0.251. Size:49K  ixys
fdm21-05qc fmd21-05qc fdm21-05qc.pdf

M2 M2

FMD 21-05QCFDM 21-05QCID25 = 21 AQ-ClassVDSS = 500 VPower MOSFETsRDSon typ. = 190 mChopper Topologiesin ISOPLUS i4-PACTMFMD FDM3 3Preliminary data5441152 2Features MOSFET Q-Class Power MOSFET technologySymbol Conditions Maximum Ratings - low RDSon- low gate charge for high frequencyVDSS TVJ = 25C to 150C 500 Voperat

 0.252. Size:64K  ixys
ixgh20n60-a ixgm20n60-a.pdf

M2 M2

VCES IC25 VCE(sat)Low VCE(sat) IGBT IXGH/IXGM 20 N60 600 V 40 A 2.5 VHigh speed IGBT IXGH/IXGM 20 N60A 600 V 40 A 3.0 VSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C40 AIC90 TC = 90C20 A TO-204 AE (IXGM)ICM TC = 25C, 1 ms

 0.253. Size:76K  ixys
ixgm25n100a.pdf

M2 M2

VCES IC25 VCE(sat)Low VCE(sat) IXGH/IXGM 25 N100 1000 V 50 A 3.5 VHigh speed IGBT IXGH/IXGM 25 N100A 1000 V 50 A 4.0 VSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 M 1000 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C50 AIC90 TC = 90C25 A TO-204 AE (IXGM)ICM TC = 25C, 1 m

 0.254. Size:82K  ixys
ixfh15n60 ixfh20n60 ixfm15n60 ixfm20n60.pdf

M2 M2

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM 15 N60 600 V 15 A 0.50 WPower MOSFETsIXFH/IXFM 20 N60 600 V 20 A 0.35 Wtrr 250 nsN-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 MW 600 V(TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 2

 0.255. Size:95K  ixys
fmm22-05pf.pdf

M2 M2

Advance Technical InformationPolarHVTM HiPerFETVDSS = 500VFMM22-05PFN-Channel Power MOSFETID25 = 13APhase Leg Topology RDS(on) 270m 33T1trr(max) 200ns5544T2ISOPLUS i4-PakTM1122Symbol Test Conditions Maximum RatingsTJ -55 ... +150 CTJM 150 C1Tstg -55 ... +150 CIsolated TabVIS

 0.256. Size:96K  ixys
fmm22-06pf.pdf

M2 M2

Advance Technical InformationPolarHVTM HiPerFETVDSS = 600VFMM22-06PFN-Channel Power MOSFETID25 = 12APhase leg Topology RDS(on) 350m 33T1trr(max) 200ns5544T2112 ISOPLUS i4-PakTM2Symbol Test Conditions Maximum RatingsTJ -55 ... +150 CTJM 150 C1Tstg -55 ... +150 CIsolated TabVISO

 0.257. Size:108K  ixys
ixth21n50 ixth24n50 ixtm21n50 ixtm24n50.pdf

M2 M2

VDSS ID25 RDS(on)MegaMOSTMFETIXTH / IXTM 21N50 500 V 21 A 0.25 IXTH / IXTM 24N50 500 V 24 A 0.23 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VD (TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C 21N50 21 A

 0.258. Size:208K  mcc
m28s-c.pdf

M2 M2

M28S-BMCCMicro Commercial ComponentsTMM28S-C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311M28S-DPhone: (818) 701-4933Fax: (818) 701-4939Features Capable of 0.625Watts of Power Dissipation. NPN Silicon Collector-current 1.0APlastic-Encapsulate Collector-base Voltage 40V Operating and storage junction temperature range: -55OC to +1

 0.259. Size:208K  mcc
m28s-b.pdf

M2 M2

M28S-BMCCMicro Commercial ComponentsTMM28S-C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311M28S-DPhone: (818) 701-4933Fax: (818) 701-4939Features Capable of 0.625Watts of Power Dissipation. NPN Silicon Collector-current 1.0APlastic-Encapsulate Collector-base Voltage 40V Operating and storage junction temperature range: -55OC to +1

 0.260. Size:208K  mcc
m28s-d.pdf

M2 M2

M28S-BMCCMicro Commercial ComponentsTMM28S-C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311M28S-DPhone: (818) 701-4933Fax: (818) 701-4939Features Capable of 0.625Watts of Power Dissipation. NPN Silicon Collector-current 1.0APlastic-Encapsulate Collector-base Voltage 40V Operating and storage junction temperature range: -55OC to +1

 0.261. Size:74K  omnirel
om200f120cmc.pdf

M2 M2

205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246,www.omnirel.comELECTRICAL CHARACTERISTICS: OM200F120CMC (Tc= 25C unless otherwise specified)Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICSCollector Emitter Breakdown Voltage, VCE=0V VCES 1200 VZero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 10AGate Emitter Leakage Current, VGE=+/-15

 0.262. Size:49K  omnirel
om200l120cmc.pdf

M2 M2

205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, ww.omnirel.comELECTRICAL CHARACTERISTICS: OM200L120CMC (Tc= 25C unless otherwise specified)Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICSCollector Emitter Breakdown Voltage, VCE=0V VCES 1200 VZero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 2AGate Emitter Leakage Current, VGE=+/-15V

 0.263. Size:69K  omnirel
om200f120cma.pdf

M2 M2

205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.comELECTRICAL CHARACTERISTICS: OM200F120CMA (Tc= 25C unless otherwise specified)Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICSCollector Emitter Breakdown Voltage, VCE=0V VCES 1200 VZero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 10AGate Emitter Leakage Current, VGE=+/-1

 0.264. Size:49K  omnirel
om200l120cmd.pdf

M2 M2

205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.comELECTRICAL CHARACTERISTICS: OM200L120CMD (Tc= 25C unless otherwise specified)Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICSCollector Emitter Breakdown Voltage, VCE=0V VCES 1200 VZero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 2AGate Emitter Leakage Current, VGE=+/-20

 0.265. Size:75K  omnirel
om200f120cmd.pdf

M2 M2

205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.comELECTRICAL CHARACTERISTICS: OM200F120CMD (Tc= 25C unless otherwise specified)Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICSCollector Emitter Breakdown Voltage, VCE=0V VCES 1200 VZero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 10AGate Emitter Leakage Current, VGE=+/-1

 0.266. Size:44K  omnirel
om200l120cma.pdf

M2 M2

205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.comELECTRICAL CHARACTERISTICS: OM200L120CMA (Tc= 25C unless otherwise specified)Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICSCollector Emitter Breakdown Voltage, VCE=0V VCES 1200 VZero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 2AGate Emitter Leakage Current, VGE=+/-15

 0.267. Size:61K  omnirel
om23p06st.pdf

M2 M2

OM23P06ST OM20P10ST OM12P10ST OM8P20ST OM8P25ST OM2P50STOM23P06SA OM20P10SA OM12P10SA OM8P20SA OM8P25SA OM2P50SAPOWER MOSFET IN HERMETIC ISOLATEDJEDEC PACKAGE, P-CHANNEL60V To 500V P-Channel MOSFET In AHermetic PackageDFEATURES Isolated Hermetic Metal Package P-ChannelG Fast Switching, Low Drive Current Ease of Paralleling For Added Power Available Scree

 0.268. Size:345K  onsemi
fdfm2p110.pdf

M2 M2

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.269. Size:842K  onsemi
irlm220a.pdf

M2 M2

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.270. Size:439K  panasonic
mtm23227.pdf

M2 M2

This product complies with the RoHS Directive (EU 2002/95/EC).MTM23227Silicon N-channel MOSFETFor switching Overview PackageMTM23227 is the l N-channel MOS FET that is highly suitable ofr DC-DC Codeconverter and other switching circuits. SMini3-G1-B Pin Name Features 1: Gate 2: Source Realization of low on-resistance, using extremely fine process (4.6 mW

 0.271. Size:434K  panasonic
mtm23110.pdf

M2 M2

MTM23110Silicon P-channel MOSFETFor switching Overview PackageMTM23110 is P-channel MOS FET for load switch circuits. Code SMini3-G1-B Features Pin Name Low voltage drive (1.8 V, 2.5 V, 4 V) 1: Gate Realization of low on-resistance, using extremely fine process 2: Source Contributes to miniaturization of sets, reduction of component count. 3:

 0.272. Size:357K  panasonic
mtm232270lbf.pdf

M2 M2

Doc No. TT4-EA-13115Revision. 2Product StandardsMOS FETMTM232270LBFMTM232270LBFSilicon N-channel MOS FETUnit : mm For switching2.0MTM13227 in SMini3 type package0.3 0.153 Features Low drain-source On-state resistance : RDS(on) typ = 85 m (VGS = 4.0 V) Low drive voltage: 2.5 V driveHalogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 c

 0.273. Size:433K  panasonic
mtm23123.pdf

M2 M2

MTM23123Silicon P-channel MOSFETFor switching Overview PackageMTM23123 is P-channel MOS FET for load switch circuits. Code SMini3-G1-B Features Pin Name Low voltage drive (2.5 V, 4 V) 1: Gate Realization of low on-resistance, using extremely fine process 2: Source Contributes to miniaturization of sets, reduction of component count. 3: Drain E

 0.274. Size:492K  panasonic
mtm232230lbf.pdf

M2 M2

Doc No. TT4-EA-12901Revision. 3MOS FETMTM232230LBFMTM232230LBFNMOS FETUnit : mm 2.00.3 0.153 RDS(on) typ = 20 m (VGS = 4.0 V) 2.5 V (EU RoHS / UL-94

 0.275. Size:431K  panasonic
mtm23223.pdf

M2 M2

MTM23223Silicon N-channel MOSFETFor switching Overview PackageMTM23223 is N-channel MOS FET for load switch circuits. Code SMini3-G1-B Pin Name Features 1: Gate Low voltage drive (2.5 V, 4 V) 2: Source Realization of low on-resistance, using extremely fine process 3: Drain Contributes to miniaturization of sets, reduction of component count.

 0.276. Size:161K  utc
utm2054l-ab3-r utm2054g-ab3-r utm2054l-ae3-r utm2054g-ae3-r.pdf

M2 M2

UNISONIC TECHNOLOGIES CO., LTD UTM2054 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTM2054 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 35m @VGS=10V * RDS(ON)= 45m @VGS=4.5V * RDS(ON)= 11

 0.277. Size:207K  utc
utm2513.pdf

M2 M2

UNISONIC TECHNOLOGIES CO., LTD UTM2513 Power MOSFET N-CHANNEL ENHANCEMENT MODE FEATURES * RDS(ON) = 10.5m(typ.) @VGS = 10 V * RDS(ON) = 16m(typ.) @VGS = 4.5 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain Lead-free: UTM2513L Halogen-free: UTM2513G 1.Gate3.Source ORDERING INFORMATION

 0.278. Size:104K  utc
m28s.pdf

M2 M2

UNISONIC TECHNOLOGIES CO., LTD M28S NPN SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER1 FEATURES TO-92* Excellent HFE Linearity * High DC Current Gain 3* High Power Dissipation APPLICATION 1* Audio Output Driver Amplifier 2* General Purpose Switch SOT-23 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Halogen Free

 0.279. Size:161K  utc
utm2054.pdf

M2 M2

UNISONIC TECHNOLOGIES CO., LTD UTM2054 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTM2054 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 35m @VGS=10V * RDS(ON)= 45m @VGS=4.5V * RDS(ON)= 11

 0.280. Size:66K  apt
apt20m22lvfr.pdf

M2 M2

APT20M22LVFR200V 100A 0.022POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche T

 0.281. Size:71K  apt
apt20m22jvr.pdf

M2 M2

APT20M22JVR200V 97A 0.022POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche

 0.282. Size:71K  apt
apt20m22.pdf

M2 M2

APT20M22JVR200V 97A 0.022POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche

 0.283. Size:71K  apt
apt20m20b2fll.pdf

M2 M2

APT20M20B2FLLAPT20M20LFLL200V 100A 0.020WTMFREDFET POWER MOS 7B2FLLPower MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchingT-MAXTO-264losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with excepti

 0.284. Size:157K  apt
apt20m20b2fllg apt20m20lfllg.pdf

M2 M2

APT20M20B2FLLAPT20M20LFLL200V 100A 0.020RFREDFET POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching loss

 0.285. Size:69K  apt
apt20m20b2ll.pdf

M2 M2

APT20M20B2LLAPT20M20LLL200V 100A 0.020WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast

 0.286. Size:64K  apt
apt20m22b2vfr.pdf

M2 M2

APT20M22B2VFR200V 100A 0.022POWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanch

 0.287. Size:63K  apt
apt20m26wvr.pdf

M2 M2

APT20M26WVR200V 65A 0.026POWER MOS VTO-267Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

 0.288. Size:65K  apt
apt10m25bvr.pdf

M2 M2

APT10M25BVR100V 75A 0.025POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

 0.289. Size:68K  apt
apt10m25svr.pdf

M2 M2

APT10M25SVR100V 75A 0.025POWER MOS VD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

 0.290. Size:73K  apt
apt20m22jvfr.pdf

M2 M2

APT20M22JVFR200V 97A 0.022POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Fast Recovery Body Diode

 0.291. Size:160K  apt
apt20m20b2llg apt20m20lllg.pdf

M2 M2

APT20M20B2LLAPT20M20LLL200V 100A 0.020R POWER MOS 7 MOSFETT-MAXPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong wi

 0.292. Size:69K  apt
apt10m25.pdf

M2 M2

APT10M25BVFR100V 75A 0.025POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes

 0.293. Size:69K  apt
apt10m25bvfr.pdf

M2 M2

APT10M25BVFR100V 75A 0.025POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes

 0.294. Size:60K  apt
apt20m20jll.pdf

M2 M2

APT20M20JLL200V 106A 0.020 WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's

 0.295. Size:63K  apt
apt20m22b2vr.pdf

M2 M2

APT20M22B2VR200V 100A 0.022POWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D L

 0.296. Size:64K  apt
apt20m22lvr.pdf

M2 M2

APT20M22LVR200V 100A 0.022POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.. Faster Switching 100% Avalanche Tested D Low

 0.297. Size:62K  apt
apt20m20jfll.pdf

M2 M2

APT20M20JFLL200V 106A 0.020WTMFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent wi

 0.298. Size:384K  auk
sum202mn.pdf

M2 M2

SUM202MNP-Channel MOSFET + PNP BJTIntegrated Power MOSFET with PNP Low VCE(sat) Switching Transistor DFN-8 8 This integrated device represents a new level of safety andboard-space reduction by combining the 20V P-Channel FET with a1 PNP Silicon Low VCE(sat) switching transistor. This newly integratedproduct provides higher efficiency and accuracy for battery poweredMOSFET

 0.299. Size:420K  auk
sum201mn.pdf

M2 M2

SUM201MNP-Channel MOSFET + PNP BJTIntegrated Power MOSFET with PNP Low VCE(sat) Switching Transistor DFN-8 This integrated device represents a new level of safety andboard-space reduction by combining the 20V P-Channel FET with aPNP Silicon Low VCE(sat) switching transistor. This newly integratedproduct provides higher efficiency and accuracy for battery poweredMOSFET portab

 0.300. Size:585K  cree
cpm2-1200-0025b.pdf

M2 M2

VDS 1200 VID @ 120C 50 ACPM2-1200-0025B RDS(on) 25 m Silicon Carbide Power MOSFET TM Z-FET MOSFETN-Channel Enhancement ModeFeatures Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS CompliantBenefits

 0.301. Size:795K  cree
ccs050m12cm2.pdf

M2 M2

VDS 1.2 kVCCS050M12CM21.2kV, 50A Silicon Carbide RDS(on) (TJ = 25C) 25 mSix-Pack (Three Phase) ModuleEOFF (TJ = 150C) 0.6 mJZ-FETTM MOSFET and Z-RecTM DiodeFeatures Package Ultra Low Loss Zero Reverse Recovery Current Zero Turn-off Tail Current High-Frequency Operation Positive Temperature Coefficient on VF and VDS(on) Cu Baseplate, AlN DBCSy

 0.302. Size:156K  eupec
bsm200gb170dlc.pdf

M2 M2

Technische Information / Technical InformationIGBT-ModuleBSM 200 GB 170 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-SperrspannungTvj = 25C VCES 1700 Vcollector-emitter voltageTC = 80 C IC,nom. 200 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 400 APeriodischer Kollek

 0.303. Size:134K  eupec
bsm200gd60dlc.pdf

M2 M2

Technische Information / Technical InformationIGBT-ModuleBSM 200 GD 60 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 600 Vcollector-emitter voltageTC= 45C IC,nom. 200 AKollektor-DauergleichstromDC-collector currentTC= 25C IC 226 APeriodischer Kollektor Spitzenstrom

 0.304. Size:205K  eupec
bsm25gb120dn2.pdf

M2 M2

BSM 25 GB 120 DN2IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 25 GB 120 DN2 1200V 38A HALF-BRIDGE 1 C67076-A2109-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate-emitter voltage VGE

 0.305. Size:212K  eupec
bsm20gd60dlc e3224.pdf

M2 M2

Technische Information / Technical InformationIGBT-ModuleBSM 20 GD 60 DLC E3224IGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 600 Vcollector-emitter voltageTC= 80C IC,nom. 20 AKollektor-DauergleichstromDC-collector currentTC= 25C IC 32 APeriodischer Kollektor Spitzenst

 0.306. Size:88K  eupec
bsm200gb120dlc.pdf

M2 M2

Technische Information / Technical InformationIGBT-ModuleBSM200GB120DLCIGBT-Modulesvorlufige Datenpreliminary dataHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 1200 Vcollector-emitter voltageTC = 80 C IC,nom. 200 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 420

 0.307. Size:261K  eupec
bsm25gd120dn2.pdf

M2 M2

BSM 25 GD 120 DN2IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 25 GD 120 DN2 1200V 35A ECONOPACK 2 C67076-A2505-A67BSM 25 GD120DN2E3224 1200V 35A ECONOPACK 2K C67070-A2505-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1

 0.308. Size:290K  eupec
bsm200gal120dlc.pdf

M2 M2

Technische Information / technical informationIGBT-ModuleBSM200GAL120DLCIGBT-modules62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Vorlufige Daten / preliminary dataHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emit

 0.309. Size:147K  eupec
bsm200ga120dn2 bsm200ga120dn2s.pdf

M2 M2

BSM 200 GA 120 DN2IGBT Power Module Single switch Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 200 GA 120 DN2 1200V 300A SINGLE SWITCH 1 C67076-A2006-A70BSM 200 GA 120 DN2 S 1200V 300A SSW SENSE 1 C67070-A2006-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollect

 0.310. Size:169K  eupec
bsm200gb120dn2.pdf

M2 M2

BSM 200 GB 120 DN2IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 200 GB 120 DN2 1200V 290A HALF-BRIDGE 2 C67070-A2300-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate-emitter voltage VGE

 0.311. Size:276K  eupec
bsm200ga120dlcs.pdf

M2 M2

Technische Information / technical informationIGBT-ModuleBSM200GA120DLCSIGBT-modules62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emitter voltageKollektor-Dauergleichstr

 0.312. Size:98K  eupec
bsm200gal120dn2.pdf

M2 M2

BSM 200 GAL 120 DN2IGBT Power Module Single switch with chopper diode at collector Chopper diode like diode of BSM300GA120DN2 Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 200 GAL 120 DN2 1200V 290A HB 200GAL C67070-A2301-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE =

 0.313. Size:267K  eupec
bsm200ga120dlc.pdf

M2 M2

Technische Information / technical informationIGBT-ModuleBSM200GA120DLCIGBT-modulesIGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emitter voltageKollektor-Dauergleichstrom T = 80C I 200 ADC-collector current T = 25C I 370 APeriodischer Kollektor Spitzenstromt = 1 ms, T = 80

 0.314. Size:267K  eupec
bsm25gd120dn2 e3224.pdf

M2 M2

BSM 25 GD 120 DN2 E3224IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 25 GD 120 DN2 1200V 35A ECONOPACK 2 C67076-A2505-A67BSM 25 GD120DN2E3224 1200V 35A ECONOPACK 2K C67070-A2505-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage

 0.315. Size:135K  eupec
bsm200gar120dn2.pdf

M2

 0.316. Size:227K  eupec
bsm200ga170dn2 bsm200ga170dn2s.pdf

M2 M2

BSM 200 GA 170 DN2IGBT Power Module Single switch Including fast free-wheeling diodes Package with insulated metal base plate RG on,min = 6.8 OhmType VCE IC Package Ordering CodeBSM 200 GA 170 DN2 1700V 290A SINGLE SWITCH 1 C67070-A2705-A67BSM 200 GA 170 DN2 S 1700V 290A SSW SENSE 1 C67070-A2707-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter vo

 0.317. Size:142K  eupec
bym200b170dn2.pdf

M2 M2

Technische Information / Technical InformationIGBT-ModuleBYM 200 B 170 DN2IGBT-Modulesvorlufige Datenpreliminary dataHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesSperrspannung der Diode Tvj = 25C VCES 1700 VDiode rerverse voltageDauergleichstromTC = 80 C IF 200 ADC forward currentPeriodischer Spitzenstromtp =

 0.318. Size:124K  eupec
bsm200gb60dlc.pdf

M2 M2

Technische Information / Technical InformationIGBT-ModuleBSM 200 GB 60 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 600 Vcollector-emitter voltageTc= 50C IC,nom. 200 AKollektor-DauergleichstromDC-collector currentTc= 25C IC 230 APeriodischer Kollektor Spitzenstrom

 0.319. Size:119K  eupec
bsm200ga170dlc.pdf

M2 M2

Technische Information / Technical InformationIGBT-ModuleBSM 200 GA 170 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-SperrspannungVCES 1700 Vcollector-emitter voltageTC = 80 C IC,nom. 200 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 400 APeriodischer Kollektor Spitzens

 0.320. Size:53K  intersil
frm240.pdf

M2 M2

FRM240D, FRM240R,FRM240H16A, 200V, 0.24 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 16A, 200V, RDS(on) = 0.24TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)

 0.321. Size:48K  intersil
frm234.pdf

M2 M2

FRM234D, FRM234R,FRM234H7A, 250V, 0.70 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 7A, 250V, RDS(on) = 0.70TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)

 0.322. Size:59K  intersil
frm230.pdf

M2 M2

FRM230D, FRM230R,FRM230H8A, 200V, 0.50 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 8A, 200V, RDS(on) = 0.50TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)

 0.323. Size:47K  intersil
frm244.pdf

M2 M2

FRM244D, FRM244R,FRM244H12A, 250V, 0.400 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 12A, 250V, RDS(on) = 0.400TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)

 0.324. Size:41K  semelab
irfm250d.pdf

M2 M2

IRFM250DMECHANICAL DATANCHANNELDimensions in mm (inches)POWER MOSFETVDSS 200VID(cont) 27.4A RDS(on) 0.100 FEATURES NCHANNEL MOSFET

 0.325. Size:577K  semelab
bds12m2a.pdf

M2 M2

SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS12M2A High Voltage Hermetic TO-257AB Isolated Metal Package Ideally suited for Power Linear, Switching and general Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO Collector Base Voltage 100V VCEO Collector Emitter Voltage 100V VEBO E

 0.326. Size:71K  sony
sgm2014am.pdf

M2 M2

SGM2014AMPreliminaryGaAs N-channel Dual Gate MES FETDescriptionThe SGM2014AM is an N-channel dual gate GaAsMES FET for UHF band low-noise amplification.This FET is suitable for a wide range of applicationsincluding TV tuners, cellular radios, and DBS IFamplifiers.Features Low voltage operation Low noise: NF = 1.5dB (typ.) at 900MHz High gain: Ga = 18dB (typ.) at

 0.327. Size:54K  sony
scm2016.pdf

M2 M2

SGM2016ANGaAs N-channel Dual-Gate MES FETDescriptionM-281The SGM2016AN is an N-channel dual-gate GaAsMES FET for UHF-band low-noise amplification. ThisFET is suitable for a wide range of applicationsincluding UHF TV tuners, cellular/cordless phone,and DBS IF amplifiers.Features Ultra-small package Low voltage operation Low noise NF = 1.2dB (typ.) at 900MHz

 0.328. Size:51K  sony
sgm2014.pdf

M2 M2

SGM2014ANPreliminaryGaAs N-channel Dual Gate MES FETDescriptionM-281The SGM2014AN is an N-channel dual gate GaAsMES FET for UHF band low-noise amplification.This FET is suitable for a wide range of applicationsincluding TV tuners, cellular radios, and DBS IFamplifiers.Features Ultra small package Low voltage operation Low noise: NF = 1.5dB (typ.) at 900MHz

 0.329. Size:53K  secos
m28st.pdf

M2

M28ST 1A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURE High DC Current Gain and Large Current Capability CLASSIFICATION OF hFE (1) Product-Rank M28ST-B M28ST-C M28ST-D Range 300~550 500~700 650~1000 Collector 1Emitter 1112 2Collector 2223Base

 0.330. Size:562K  secos
sum2153.pdf

M2 M2

SUM2153 0.81A , 20V , RDS(ON) 310 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SOT-363 These miniature surface mount MOSFETs utilize a high Acell density trench process to provide low RDS(on) and to E Lensure minimal power loss and heat dissipation

 0.331. Size:53K  secos
m28s.pdf

M2

M28S 1A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-23 Excellent hFE Linearity A High DC Current Gain L33Top ViewC BCLASSIFICATION OF hFE 11 2Product-Rank M28S-B M28S-C M28S-D 2K ERange 300~550 500~700 650~1000 DMarking 28S Collector H

 0.332. Size:398K  secos
sgm2306a.pdf

M2 M2

SGM2306A5A, 30V,RDS(ON) 35m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductDescriptionSOT-89The SGM2306A utilized advanced processing techniques toachieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.The SGM2306A is universally used for all commercial-industrial surface mount applications.

 0.333. Size:1006K  secos
sgm2310a.pdf

M2 M2

SGM2310A 5 A, 60 V, RDS(ON) 115 m N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 DESCRIPTION AThe SGM2310A utilized advanced processing techniques to 4achieve the lowest possible on-resistance, extremely efficient Top ViewC Band cost-effectiveness device. The SGM231

 0.334. Size:1782K  secos
sgm2305a.pdf

M2 M2

SGM2305A -3.2 A, -30 V, RDS(ON) 80 m P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES A The SGM2305A provide the designer with best combination of fast switching, 4Top ViewC Blow on-resistance and cost-effectiveness. The SGM2305A is universally preferred

 0.335. Size:411K  taiwansemi
tsm240n03cx.pdf

M2 M2

TSM240N03CX 30V N-Channel Power MOSFET SOT-23 Key Parameter Performance Pin Definition: 1. Gate Parameter Value Unit 2. Source 3. Drain VDS 30 V VGS = 10V 24 Note: RDS(on) (max) m MSL 1 (Moisture Sensitivity Level) VGS = 4.5V 34 per J-STD-020 Qg 4.1 nC Block Diagram Ordering Information Ordering code Package Packing TSM240N03CX RFG SOT-23 3kpcs /

 0.336. Size:335K  taiwansemi
tsm23n50cn.pdf

M2 M2

TSM23N50CN 500V N-Channel Power MOSFET TO-3PN Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Drain 3. Source 500 0.22 @ VGS =10V 23 General Description The TSM23N50CN N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide

 0.337. Size:366K  taiwansemi
tsm2323 a07.pdf

M2 M2

TSM2323 20V P-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Gate 39 @ VGS = -4.5V -4.7 2. Source 3. Drain -20 52 @ VGS = -2.5V -4.1 68 @ VGS = -1.8V -2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch P-Chann

 0.338. Size:120K  taiwansemi
tsm2312.pdf

M2 M2

 0.339. Size:119K  taiwansemi
tsm2301bcx.pdf

M2 M2

 0.340. Size:208K  taiwansemi
tsm2311cx.pdf

M2 M2

TSM2311 20V P-Channel MOSFET SOT-23 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 55 @ VGS = -4.5V -4.0 -20 85 @ VGS = -2.5V -2.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch P-Channel MOSFET Orderi

 0.341. Size:249K  taiwansemi
tsm2301a.pdf

M2 M2

TSM2301A Taiwan Semiconductor P-Channel Power MOSFET -20V, -2.8A, 130m KEY PERFORMANCE PARAMETERS Features PARAMETER VALUE UNIT Advance Trench Process Technology VDS -20 V High Density Cell Design for Ultra Low On-resistance VGS = -4.5V 130 RDS(on) (max) m VGS = -2.5V 190 Application Qg 7.2 nC Telecom power Consumer Electronics SOT-23

 0.342. Size:60K  taiwansemi
tsm2328cx.pdf

M2 M2

TSM2328 100V N-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 250 @ VGS =10V 1.5 100 General Description The TSM2328 utilized advanced processing techniques to achieve the lowest possible On-Resistance, extremely efficient and cost-effectiveness device. The TSM2328 is universally used for all commercial-in

 0.343. Size:195K  taiwansemi
tsm2314cx.pdf

M2 M2

TSM2314 20V N-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 33 @ VGS = 4.5V 4.9 40 @ VGS = 2.5V 4.4 20 100 @ VGS = 1.8V 2.9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Orderin

 0.344. Size:238K  taiwansemi
tsm2306cx.pdf

M2 M2

TSM2306 30V N-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Gate 2. Source 57 @ VGS =10V 3.5 3. Drain 30 94 @ VGS =4.5V 2.8 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No. Pa

 0.345. Size:429K  taiwansemi
tsm2n70ch tsm2n70cp tsm2n70cz.pdf

M2 M2

TSM2N70 700V N-Channel Power MOSFET Pin Definition: TO-220 TO-251 TO-252 PRODUCT SUMMARY 1. Gate (IPAK) (DPAK) 2. Drain VDS (V) RDS(on)() ID (A) 3. Source 700 6.5 @ VGS =10V 1 General Description The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-st

 0.346. Size:239K  taiwansemi
tsm2310cx.pdf

M2 M2

TSM2310 20V N-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 33 @ VGS = 4.5V 4 3. Drain 20 40 @ VGS = 2.5V 3.2 100 @ VGS = 1.8V 2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Info

 0.347. Size:213K  taiwansemi
tsm2312cx.pdf

M2 M2

TSM2312 20V N-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Gate 2. Source 33 @ VGS = 4.5V 4.9 3. Drain 20 40 @ VGS = 2.5V 4.4 51 @ VGS = 1.8V 3.9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering In

 0.348. Size:62K  taiwansemi
tsm210n06cz.pdf

M2 M2

TSM210N06 60V N-Channel Power MOSFET TO-220 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Drain 3. Source 60 3.1 @ VGS =10V 210 Features Block Diagram Advanced Trench Technology Low RDS(ON) 3.1m (Max.) Low gate charge typical @ 160nC (Typ.) Low Crss typical @ 300pF (Typ.) Ordering Information Part No. Package Packing

 0.349. Size:253K  taiwansemi
tsm2323cx.pdf

M2 M2

TSM2323 20V P-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Gate 2. Source 39 @ VGS = -4.5V -4.7 3. Drain -20 52 @ VGS = -2.5V -4.1 68 @ VGS = -1.8V -2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch P-C

 0.350. Size:127K  taiwansemi
tsm2n7002 a07.pdf

M2 M2

 0.351. Size:163K  taiwansemi
tsm2n60 c07.pdf

M2 M2

 0.352. Size:85K  taiwansemi
tsm2n7000.pdf

M2 M2

 0.353. Size:118K  taiwansemi
tsm2313 tsm2313cx.pdf

M2 M2

 0.354. Size:346K  taiwansemi
tsm2302 a07.pdf

M2 M2

TSM2302 20V N-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Gate 2. Source 65 @ VGS = 4.5V 2.8 3. Drain 20 95 @ VGS = 2.5V 2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No.

 0.355. Size:126K  taiwansemi
tsm25n03cp tsm25n03 a07.pdf

M2 M2

 0.356. Size:453K  taiwansemi
tsm2n60ch tsm2n60cp tsm2n60cz.pdf

M2 M2

TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 TO-252 Pin Definition: PRODUCT SUMMARY (IPAK) (DPAK) 1. Gate 2. Drain VDS (V) RDS(on)() ID (A) 3. Source 600 4.4 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFE

 0.357. Size:401K  taiwansemi
tsm20n50ci tsm20n50cz.pdf

M2 M2

TSM20N50 500V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 500 0.3 @ VGS =10V 18 General Description The TSM20N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, prov

 0.358. Size:186K  taiwansemi
tsm2307cx.pdf

M2 M2

TSM2307 30V P-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 95 @ VGS = -10V -3 -30 140 @ VGS = -4.5V -2 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No

 0.359. Size:143K  taiwansemi
tsm2n7002e a07.pdf

M2 M2

 0.360. Size:370K  taiwansemi
tsm2308cx.pdf

M2 M2

TSM2308 60V N-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 156 @ VGS = 10V 3 60 192 @ VGS = 4.5V 2.1 Block Diagram Features Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application DC-DC Power System Load Switch Ordering Information

 0.361. Size:322K  taiwansemi
tsm2n60scw.pdf

M2 M2

TSM2N60S 600V N-Channel Power MOSFET SOT-223 Pin Definition: PRODUCT SUMMARY 1. Gate 2. Drain VDS (V) RDS(on)() ID (A) 3. Source 600 5 @ VGS =10V 0.6 General Description The TSM2N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand

 0.362. Size:355K  taiwansemi
tsm2611edcx6.pdf

M2 M2

TSM2611ED 20V Dual N-Channel MOSFET w/ESD Protected SOT-26 Pin Definition: PRODUCT SUMMARY 1. Source 1 6. Gate 1 VDS (V) RDS(on)(m) ID (A) 2. Drain 1 5. Drain 2 3. Source 2 4. Gate 2 20 @ VGS = 4.5V 6 20 28 @ VGS = 2.5V 5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On resistance ESD Protected HBM

 0.363. Size:366K  taiwansemi
tsm2nb60ch tsm2nb60ci tsm2nb60cp tsm2nb60cz.pdf

M2 M2

TSM2NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 600 4.4 @ VGS =10V 1 General Description The TSM2NB60 N-Channel Power MOSFET is TO-251 TO-252 (IPAK) (DPAK) produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resi

 0.364. Size:357K  taiwansemi
tsm2303cx.pdf

M2 M2

TSM2303 30V P-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 180 @ VGS =-10V -1.3 -30 300 @ VGS =-4.5V -1.1 Block Diagram Features Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Portable Devices High Speed Switch Ordering Info

 0.365. Size:340K  taiwansemi
tsm2301acx tsm2301cx.pdf

M2 M2

TSM2301 20V P-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Gate 130 @ VGS = -4.5V -2.8 2. Source -20 3. Drain 190 @ VGS = -2.5V -2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch P-Channel MOSFET Orderi

 0.366. Size:315K  taiwansemi
tsm2302cx.pdf

M2 M2

TSM2302 20V N-Channel MOSFET SOT-23 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 65 @ VGS = 4.5V 2.8 20 95 @ VGS = 2.5V 2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No.

 0.367. Size:181K  taiwansemi
tsm2n7000kct.pdf

M2 M2

TSM2N7000K 60V N-Channel MOSFET TO-92 Pin Definition: PRODUCT SUMMARY 1. Source VDS (V) RDS(on)() ID (mA) 2. Gate 3. Drain 5 @ VGS = 10V 100 60 5.5 @ VGS = 5V 100 Features Block Diagram Low On-Resistance ESD Protection High Speed Switching Low Voltage Drive Ordering Information Part No. Package Packing TSM2N7000KCT B0 TO-92 1Kpcs / Bulk

 0.368. Size:194K  taiwansemi
tsm2n7002kdcu6.pdf

M2 M2

TSM2N7002KD 60V N-Channel MOSFET SOT-363 PRODUCT SUMMARY Pin Definition: 1. Source 2 6. Drain 2 VDS (V) RDS(on)(m) ID (A) 2. Gate 2 5. Gate 1 3. Drain 1 4. Source 1 2 @ VGS = 10V 300 60 4 @ VGS = 4.5V 200 Features Block Diagram Low On-Resistance ESD Protection High Speed Switching Low Voltage Drive Ordering Information Part No. Package Pa

 0.369. Size:118K  taiwansemi
tsm2311 a07.pdf

M2 M2

 0.370. Size:237K  taiwansemi
tsm2318cx.pdf

M2 M2

TSM2318 40V N-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 45 @ VGS = 10V 3.9 40 62.5 @ VGS = 4.5V 3.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch Stepper Motors Ordering Information Pa

 0.371. Size:380K  taiwansemi
tsm2n7002kcx.pdf

M2 M2

TSM2N7002KCX Taiwan Semiconductor N-Channel Power MOSFET 60V, 300mA, 2 FEATURES KEY PERFORMANCE PARAMETERS Low On-Resistance PARAMETER VALUE UNIT ESD Protected 2KV VDS 60 V High Speed Switching VGS = 10V 2 Low Voltage Drive RDS(on) (max) VGS = 4.5V 4 Qg 0.4 nC APPLICATION Logic Level translators DC-DC Converter SOT-23 Note

 0.372. Size:378K  taiwansemi
tsm2305cx.pdf

M2 M2

TSM2305 20V P-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 55 @ VGS =-4.5V -3.2 80 @ VGS =-2.5V -2.7 -20 130 @ VGS =-1.8V -2.0 Block Diagram Features Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Battery Management High Spe

 0.373. Size:237K  taiwansemi
tsm2n7002kcu tsm2n7002kcx.pdf

M2 M2

TSM2N7002K 60V N-Channel MOSFET SOT-23 SOT-323 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (mA) 2. Source 3. Drain 2 @ VGS = 10V 300 60 4 @ VGS = 4.5V 200 Features Block Diagram Low On-Resistance ESD Protected 2KV High Speed Switching Low Voltage Drive Ordering Information Part No. Package Packing TSM2N7002KCX RF SOT-23

 0.374. Size:118K  taiwansemi
tsm2301.pdf

M2 M2

 0.375. Size:112K  jiangsu
m28s.pdf

M2

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 M28S TRANSISTOR (NPN) 1.EMITTER FEATURES 2.COLLECTOR High DC Current Gain and Large Current Capability 3.BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbo Parameter Value UnitVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Sustaining Voltage 20 V VEBO

 0.376. Size:366K  kec
fm200cd1d5b.pdf

M2 M2

SEMICONDUCTORFM200CD1D5BTECHNICAL DATA150V / 200A(Common-Drain)2-PACK MOSFET MODULE FEATURES Low RDS(on)High frequency operationdv/dt ruggednessFast switchingAPPLICATION Battery Management SystemElectric VehicleOUTLINE DRAWINGINTERNAL CIRCUITUnit : mm_ _ _13 0.3 13 0.3 13 0.3+ + +676711 35235424_ _23 0.3 23 0.3+ +

 0.377. Size:415K  kec
gm200hb12ct.pdf

M2 M2

SEMICONDUCTORGM200HB12CTTECHNICAL DATA1200V/200A 2 IN ONE PACKAGETENTATIVEFEATURES IGBT New Technology Unit : mmOUTLINE DRAWINGLow VCE(sat)Low Turn-off losses _108.5 0.2+_6.5 0.2+_ _28 0.2 28 0.2+ +Short tail currentPositive temperature coefficientG2E2APPLICATION E1AC & DC Motor controlsG1M6General purpose invertersOptimize

 0.378. Size:366K  kec
fm200hb1d5b.pdf

M2 M2

SEMICONDUCTORFM200HB1D5BTECHNICAL DATA150V / 200A(Half - Bridge)2 - PACK MOSFET MODULE FEATURES Low RDS(on)High frequency operationdv/dt ruggednessFast switchingAPPLICATION Motor controlBattery management systemElectric vehicleUnit : mmOUTLINE DRAWINGINTERNAL CIRCUIT_ _ _13 0.3 13 0.3 13 0.3+ + +6 677 1 1 2 3 23545_ _+

 0.379. Size:249K  microsemi
aptc60skm24ct1g.pdf

M2 M2

APTC60SKM24CT1GVDSS = 600V Buck chopper RDSon = 24m max @ Tj = 25C Super Junction MOSFET ID = 95A @ Tc = 25C SiC chopper diode Application AC and DC motor control 115 6 Switched Mode Power Supplies Features Q1 - Ultra low RDSon 7- Low Miller capacitance NTC8- Ultra low gate charge 3- Avalanche energy rated 4- Very rugged CR2

 0.380. Size:284K  microsemi
aptm50am24scg.pdf

M2 M2

APTM50AM24SCG Phase leg VDSS = 500V Series & SiC parallel diodes RDSon = 24m typ @ Tj = 25C ID = 150A @ Tc = 25C MOSFET Power Module Application Motor control VBUS Switched Mode Power Supplies Uninterruptible Power Supplies Features Q1 Power MOS 7 MOSFETs G1- Low RDSon OUT- Low input and Miller capacitance S1- Low gate charge - Aval

 0.381. Size:249K  microsemi
aptc60dam24ct1g.pdf

M2 M2

APTC60DAM24CT1GVDSS = 600V Boost chopper RDSon = 24m max @ Tj = 25C Super Junction MOSFET ID = 95A @ Tc = 25C Power Module Application AC and DC motor control 5 6 11 Switched Mode Power Supplies Power Factor Correction Features CR1 - Ultra low RDSon 3NTC- Low Miller capacitance 4Q2- Ultra low gate charge - Avalanche energy rated

 0.382. Size:232K  microsemi
aptc60am24sctg.pdf

M2 M2

APTC60AM24SCTG VDSS = 600V Phase leg RDSon = 24m max @ Tj = 25C Series & SiC parallel diodes ID = 95A @ Tc = 25C Super Junction MOSFET Power Module Application Motor control Switched Mode Power Supplies Uninterruptible Power Supplies NTC2VBUSFeatures Q1- Ultra low RDSon - Low Miller capacitance G1- Ultra low gate charge OUT- Aval

 0.384. Size:298K  htsemi
m28s.pdf

M2

M28 STRANSISTOR(NPN)SOT23 FEATURES Excellent hFE Linearity High DC Current Gain MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 40 V CBO 3. COLLECTOR V Collector-Emitter Voltage 20 V CEOVEBO Emitter-Base Voltage 6 V I Collector Current 1 A CP Collector Power Dissipation 200 mW

 0.385. Size:356K  cet
cem2133.pdf

M2 M2

CEM2133P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-20V, -10A, RDS(ON) = 18m @VGS = -4.5V. RDS(ON) = 27m @VGS = -2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead-free plating ; RoHS compliant.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA =

 0.386. Size:407K  cet
cem2182.pdf

M2 M2

CEM2182N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES20V, 9.3A, RDS(ON) = 18m @VGS = 4.5V. RDS(ON) = 24m @VGS = 2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead-free plating ; RoHS compliant.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25

 0.387. Size:572K  cet
cem26138.pdf

M2 M2

CEM26138Dual N-Channel Enhancement Mode Field Effect TransistorPRELIMINARYFEATURES30V, 7.6A, RDS(ON) = 22m @VGS = 10V. RDS(ON) = 33m @VGS = 4.5V.20V, 6A, RDS(ON) = 27m @VGS = 4.5V. RDS(ON) = 40m @VGS = 2.5V.D1 D1 D2 D2Super high dense cell design for extremely low RDS(ON).8 7 6 5High power and current handing capability.Lead-free plating ; RoHS compliant.Su

 0.388. Size:440K  cet
cem2187.pdf

M2 M2

CEM2187P-Channel Enhancement Mode Field Effect TransistorFEATURES-20V, -7.6A, RDS(ON) = 22m @VGS = -4.5V. RDS(ON) = 32m @VGS = -2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired. D1 D1 D2 D28 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS TA = 25 C unle

 0.389. Size:324K  cet
cem2163.pdf

M2 M2

CEM2163P-Channel Enhancement Mode Field Effect TransistorFEATURES-20V, -8.9A, RDS(ON) = 20m @VGS = -4.5V. RDS(ON) = 30m @VGS = -2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless oth

 0.390. Size:271K  cet
cem2281.pdf

M2 M2

CEM2281P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-20V, -7.2A, RDS(ON) = 30m @VGS = -4.5V. RDS(ON) = 43m @VGS = -2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25

 0.391. Size:457K  cet
cem2939.pdf

M2 M2

CEM2939Dual Enhancement Mode Field Effect Transistor (N and P Channel)FEATURES520V, 6.5A, RDS(ON) = 30m @VGS = 4.5V. RDS(ON) = 43m @VGS = 2.5V.-20V, -4.8A, RDS(ON) = 55m @VGS = -4.5V. RDS(ON) = 90m @VGS = -2.5V.Super high dense cell design for extremely low RDS(ON).D1 D1 D2 D2High power and current handing capability.8 7 6 5Lead free product is acquired.Sur

 0.392. Size:424K  cet
cem2401.pdf

M2 M2

CEM2401P-Channel Enhancement Mode Field Effect TransistorFEATURES-20V, -6A, RDS(ON) = 44m @VGS = -4.5V. RDS(ON) = 65m @VGS = -2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless other

 0.393. Size:389K  cet
cem2192.pdf

M2 M2

CEM2192Dual N-Channel Enhancement Mode Field Effect TransistorPRELIMINARYFEATURES20V, 8A, RDS(ON) = 24m @VGS = 4.5V. RDS(ON) = 35m @VGS = 2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead-free plating ; RoHS compliant.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA

 0.394. Size:504K  cet
cem2539.pdf

M2 M2

CEM2539Dual Enhancement Mode Field Effect Transistor (N and P Channel)FEATURESD1 D2520V, 7.5A, RDS(ON) = 22m @VGS = 10V. RDS(ON) = 24m @VGS = 4.5V.*1KG1 G2 RDS(ON) = 33m @VGS = 2.5V.-20V, -4.0A, RDS(ON) = 80m @VGS = -10V. RDS(ON) = 100m @VGS = -4.5V.S1 S2 RDS(ON) = 150m @VGS = -2.5V.D1 D1 D2 D28 7 6 5Super high dense cell design for extremely lo

 0.395. Size:615K  cet
cem2539a.pdf

M2 M2

CEM2539ADual Enhancement Mode Field Effect Transistor (N and P Channel)FEATURESD1 D2520V, 7.5A, RDS(ON) = 22m @VGS = 10V. RDS(ON) = 25m @VGS = 4.5V.G1 G2 RDS(ON) = 40m @VGS = 2.5V.-20V, -4A, RDS(ON) = 80m @VGS = -10V. RDS(ON) = 100m @VGS = -4.5V.S1 S2 RDS(ON) = 150m @VGS = -2.5V.D1 D1 D2 D28 7 6 5Super high dense cell design for extremely low RDS(

 0.396. Size:440K  cet
cem2407.pdf

M2 M2

CEM2407P-Channel Enhancement Mode Field Effect TransistorFEATURES-20V, -5.3A, RDS(ON) = 45m @VGS = -4.5V. RDS(ON) = 65m @VGS = -2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired. D1 D1 D2 D28 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS TA = 25 C unle

 0.397. Size:273K  gsme
m28s.pdf

M2 M2

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GMM28SFEATURESFEATURES FEATURESHigh hFE NPN silicon NPN MAXIMUM RATINGS (Ta=25 )MAXIMUM RATINGS (Ta=25)MAXIMUM RATINGS (Ta=25 )CHARACTERISTIC Symbol

 0.398. Size:292K  gsme
gm2302.pdf

M2 M2

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM2302SOT-23 (SOT-23 Field Effect Transistors)N-Channel Enhancement-Mode MOS FETsN-Channel Enhancement-Mode MOS FETsN-Channel Enhancement-Mode MOS FET

 0.399. Size:293K  gsme
gm2301.pdf

M2 M2

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM2301SOT-23 (SOT-23 Field Effect Transistors)P-Channel Enhancement-Mode MOS FETsP-Channel Enhancement-Mode MOS FETsP-Channel Enhancement-Mode MOS FET

 0.400. Size:1290K  wietron
wtm2222a.pdf

M2 M2

WTM2222ANPN Epitaxial Planar TransistorsSOT-89P b Lead(Pb)-Free121. BASEFeatures:32. COLLECTOR3. EMITTER* Low Collector Saturation Voltage* High Speed Switching* For Complementary Use With PNP Type WTM2907AABSOLUTE MAXIMUM RATINGS (TA=25C)Rating Symbol Limits UnitVCBO VCollector-Base Voltage75VCEOVCollector-Emitter Voltage 40VEBOVEmitter-Base Vo

 0.401. Size:758K  wietron
wtm2310a.pdf

M2 M2

WTM2310AN-Channel Enhancement 3 DRAINMode Power MOSFET DRAIN CURRENT5.0 AMPERESP b Lead(Pb)-FreeDRAIN SOUCE VOLTAGE160 VOLTAGEGATEFeatures:2 SOURCE* Simple Drive Requirement.* Super High Density Cell Design for Extremely Low RDS(ON).1231. GATE2. DRAIN3. SOURCESOT-89Maximum Ratings (TA=25C Unless Otherwise Specified)Rating Symbol Value UnitVDS VD

 0.402. Size:468K  wietron
wtm2907a.pdf

M2 M2

WTM2907APNP Epitaxial Planar TransistorsSOT-89P b Lead(Pb)-Free121. BASE32. COLLECTORFeatures:3. EMITTER* Low Collector Saturation Voltage* High Spwwd Switching* For Complementary Use With NPN Type WTM2222AABSOLUTE MAXIMUM RATINGS (TA=25C)Rating Symbol Limits UnitVCBO VCollector-Base Voltage-60VCEOVCollector-Emitter Voltage -60VEBOVEmitter-Base

 0.403. Size:1480K  willsemi
wnm2046b.pdf

M2 M2

WNM2046BWNM2046BSingle N-Channel, 20V, 0.71A, Power MOSFET Http://www.sh-willsemi.comGVDS (V) Typical Rds(on) ()S0.220@ VGS=4.5VD20 0.260@ VGS=2.5V0.315@ VGS=1.8VDFN1006-3LDescriptionsThe WNM2046B is N-Channel enhancement MOSField Effect Transistor. Uses advanced trenchDtechnology and design to provide excellent RDS (ON)with low gate charge. This device is suit

 0.404. Size:914K  willsemi
wpm2006.pdf

M2 M2

WPM2006WPM2006Power MOSFET and Schottky DiodeFeatures Featuring a MOSFET and Schottky Diode Independent Pinout to each Device to Ease Circuit Design Ultra Low VF SchottkyDFN2*2 -6LApplications Li--Ion Battery Charging High Side DC-DC Conversion Circuits High Side Drive for Small Brushless DC Motors Power Management in Portable, Battery Powered Products1

 0.405. Size:908K  willsemi
wcm2079.pdf

M2 M2

WCM2079WCM2079N- and P-Channel Complementary, 20V,MOSFET http://www.sh-willsemi.comV (V) Typical R ()DS DS(on)N-Channel 0.020@V =10VGS20 0.023@V =4.5VGS(4)(3)0.028@V =-10VP-Channel GS(2)-20 0.035@V =-4.5V (1)GSSOP-8LDescriptionsThe WCM2079 is the N-Channel and P-Channelenhancement MOS Field Effect Transistor as asingle package for DC-DC converter or le

 0.406. Size:3465K  willsemi
wcm2007.pdf

M2 M2

WCM2007 WCM2007 N- and P-Channel, 20V, MOSFET Http://www.sh-willsemi.com V(BR)DSS RDS(on) Typical. () 0.18@ 4.5V N-Channel 0.23@ 2.5V 20 V 0.30@ 1.8V ESD protection 0.45@-4.5V P-Channel 0.60@ -2.5V -20 V 0.75@ -1.8V SOT-563 ESD protection Descriptions D1 G2 S26 5 4The WCM2007 is the N- and P-Channel enhancement MOS Field Effect Transistor as a singl

 0.407. Size:612K  willsemi
wpm2014.pdf

M2 M2

WPM2014WPM2014Single P-Channel, -20V, -4.9A, Power MOSFET Http//:www.sh-willsemi.comVDS (V) Rds(on) ()0.050 @ VGS=4.5V-20 0.063 @ VGS=2.5V0.074 @ VGS=1.8VDFN2x2-6LDescriptionsD DS6 5 4The WPM2014 is P-Channel enhancement MOS DField Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)Swith low gate charge. This

 0.408. Size:1225K  willsemi
wnm2046c.pdf

M2 M2

WNM2046C WNM2046C Single N-Channel, 20V, 0.6A, Power MOSFET Http://www.willsemi.com GV (V) Typical R () DS DS(on)SD0.42 @ V =4.5V GS 20 0.58 @ V =2.5V GS0.84 @ V =1.8V GS DFN1006-3L Descriptions DThe WPM2046C is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS(ON)with low gate char

 0.409. Size:909K  willsemi
wnm2024.pdf

M2 M2

WNM2024 WNM2024 Single N-Channel, 20V, 3.9A, Power MOSFET Http://www.sh-willsemi.com VDS (V) Rds(on) ()0.027@ VGS=4.5V20 0.031@ VGS=2.5V0.036@ VGS=1.8VSOT-23 Descriptions D 3 The WNM2024 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for us

 0.410. Size:1966K  willsemi
wpm2048.pdf

M2 M2

WPM2048 WPM2048 Single P-Channel, -20V, -2.2A, Power MOSFET www.sh-willsemi.com VDS (V) Rds(on) (m) 96@ VGS=-4.5V -20 135@ VGS=-2.5V SOT-23 Descriptions D 3 The WPM2048 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conver

 0.411. Size:1062K  willsemi
wnm2046.pdf

M2 M2

WNM2046WNM2046Single N-Channel, 20V, 0.71A, Power MOSFET Http://www.sh-willsemi.com(1)(2)GVDS (V) Typical Rds(on) ()S0.220@ VGS=4.5V (3)D20 0.260@ VGS=2.5V0.315@ VGS=1.8VDFN1006-3LDescriptions(3)The WNM2046 is N-Channel enhancement MOSField Effect Transistor. Uses advanced trenchDtechnology and design to provide excellent RDS (ON)with low gate charge. Thi

 0.412. Size:1935K  willsemi
wnm2072.pdf

M2 M2

WNM2072WNM2072Single N-Channel, 20V, 0.71A, Power MOSFET Http://www.sh-willsemi.comGVDS (V) Typical Rds(on) ()S0.220@ VGS=4.5VD20 0.260@ VGS=2.5V0.315@ VGS=1.8VESD ProtectedDFN1006-3LDescriptionsThe WNM2072 is N-Channel enhancement MOSField Effect Transistor. Uses advanced trenchDtechnology and design to provide excellent RDS (ON)with low gate charge. This de

 0.413. Size:807K  willsemi
wpm2015.pdf

M2 M2

WPM2015WPM2015Http://www.sh-willsemi.com Single P-Channel, -20V, -2.4A, Power MOSFET VDS (V) Rds(on) ( ) 0.081@ VGS= 4.5V-200.103@ VGS= 2.5VSOT-23 DescriptionsD3The WPM2015 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use 12in DC-D

 0.414. Size:1387K  willsemi
wpm2087.pdf

M2 M2

WPM2087 WPM2087 Single P-Channel, -20V, -4.3A, Power MOSFET Http://www.sh-willsemi.com VDS (V) Typical RDS(on) (m) 34@ V =-4.5V GS-20 39 @ V =-3.1V GS45 @ V =-2.5V GS SOT-23 Descriptions D 3 The WPM2087 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS(ON)with low gate charge. This dev

 0.415. Size:724K  willsemi
wpm2031.pdf

M2 M2

WPM2031 WPM2031 Single P-Channel, -20V, -0.65A, Power MOSFET Http://www.sh-willsemi.com VDS (V) Rds(on) () 0.495@ VGS=4.5V D -20 0.665@ VGS=2.5V S0.882@ VGS=1.8V GESD Protected SOT-723 Descriptions D The WPM2031 is P-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low

 0.416. Size:1401K  willsemi
wcm2002.pdf

M2 M2

012344350123443678595952581934555]^5iIjN666e56]f^955(I'O(g666N`6 Y5,-%".//#2 g6U VWWXXXYX66m65(I'kjg6N`6'INh6'(6`-66(IOO( ] N^66`lIh6(Ij'(g6Nh6ijjN1-%".//#2566N(IPmjg6Nh668Z[Z5`-'IjN-'(6N(Imn(g6Nh66`-lImI66h6D1 G2 S2#/".!"#63#3+6.

 0.417. Size:559K  willsemi
wnm2030.pdf

M2 M2

WNM2030 WNM2030 Http://www.sh-willsemi.com Single N-Channel, 20V, 0.95A, Power MOSFET DVDS (V) Rds(on) ( ) 0.210@ VGS=4.5V S G20 0.250@ VGS=2.5V SOT-723 0.305@ VGS=1.8V ESD Protected Descriptions D3The WNM2030 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) 12with low gate ch

 0.418. Size:628K  willsemi
wpm2019.pdf

M2 M2

WPM2019 WPM2019 Http://www.sh-willsemi.com Single P-Channel, -20V, -0.73A, Power MOSFET VDS (V) Rds(on) ( )D0.480@ VGS= 4.5V-20 0.620@ VGS= 2.5VS0.780@ VGS= 1.8VGSOT-523 DescriptionsThe WPM2019 is P-Channel enhancement MOS D3Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is sui

 0.419. Size:1054K  willsemi
wcm2001.pdf

M2 M2

WCM2001WCM2001N- and P-Channel Complementary, 20V, MOSFET Http://www.willsemi.com V(BR)DSS RDS(on) Typ. ( m )180 @ 4.5V N-Channel 225 @ 2.5V20 V 280 @ 1.8V85 @ -4.5V P-Channel 110 @ -2.5V-20 V 150 @ -1.8VD1 G2 S26 5 4DescriptionsThe WCM2001 is the N- and P-Channel enhancement MOS Field Effect Transistor as a single 1 2 3package for DC-DC converter or Lo

 0.420. Size:1181K  willsemi
wpm2083.pdf

M2 M2

WPM2083 WPM2083 Single P-Channel, -20V, -2.4A, Power MOSFET Http://www.sh-willsemi.com VDS (V) Typical RDS(on) (m) DDDD81 @ VGS=-4.5V -20 SSSS110 @ VGS=-2.5V GGGGSOT-23 Descriptions D 3 The WPM2083 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate char

 0.421. Size:280K  willsemi
wpm2037.pdf

M2 M2

WPM2037WPM2037Single P-Channel, -20V, -3.6A , Power MOSFET Http//:www.willsemi.com VDS (V) Rds(on) ( )0.047@ VGS= 4.5V-20 0.060@ VGS= 2.5V0.076@ VGS= 1.8VSOT-23-6L DescriptionsSD DThe WPM2037 is P-Channel enhancement MOS 6 5 4Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitabl

 0.422. Size:199K  willsemi
wpm2009d.pdf

M2 M2

WPM2009DWPM2009D-20V, -4A, 42m, 2.0W, DFN3x3, P-MOSFET Http://www.willsemi.com BottomDescriptions This single P-Channel MOSFET is produced using trench process that provides minimum on resistance performance. WPM2009D isenhancement power MOSFET with 2.0W power DFN3x3-8L dissipation mounting 1 in2 pad in a DFN3x3 package. This device is suited for high power charging cir

 0.423. Size:2102K  willsemi
wpm2005b.pdf

M2 M2

WPM2005BWPM2005BPower MOSFET and Schottky DiodeFeaturesDFN32-8L Featuring a MOSFET and Schottky Diode Independent Pinout to each Device to Ease Circuit Design Ultra Low VF SchottkyApplications Li--Ion Battery Charging High Side DC-DC Conversion Circuits High Side Drive for Small Brushless DC Motors Power Management in Portable, Battery Powered ProductsMOS

 0.424. Size:440K  willsemi
wnm2020.pdf

M2 M2

WNM2020WNM2020Http://www.sh-willsemi.com N-Channel, 20V, 0.90A, Small Signal MOSFET VDS (V) Rds(on) ( )D0.220@ VGS=4.5V20 0.260@ VGS=2.5VS0.320@ VGS=1.8VGSOT-23 DescriptionsThe WNM2020 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) Dwith low gate charge. This device is suitable for

 0.425. Size:1090K  willsemi
wcm2068.pdf

M2 M2

WCM2068WCM2068N- and P-Channel Complementary, 20V,MOSFET Http://www. sh- willsemi.comVDS (V) Typical RDS(on) ()0.033@ VGS=4.5VN-Channel0.037@ VGS=3.3V200.041@ VGS=2.5V0.085@VGS=- 4.5VP-ChannelSOT-23-6L0.097@VGS= -3.3V-200.110@VGS= -2.5VDescriptionsThe WCM2068 is the N-Channel andP-Channel enhancement MOS Field EffectTransistor as a single package for DC-DC

 0.426. Size:2273K  willsemi
wpm2341.pdf

M2 M2

WPM2341WPM2341P-Channel Enhancement Mode MosfetHttp://www.sh-willsemi.com Features Higher Efficiency Extending Battery Life Miniature SOT23-3 Surface Mount Package3 Super high density cell design for extremely low RDS (ON) 12Applications DC/DC Converter Load Switch SOT 23-3 Battery Powered System LCD Display inverter Power Management in Porta

 0.427. Size:951K  willsemi
wnm2077.pdf

M2 M2

WNM2077WNM2077Single N-Channel, 20V, 0.54A, Power MOSFET Http//:www.willsemi.comV (V) Rds(on) ()DS0.420@ V =4.5VGS20 0.580@ V =2.5VGSSOT-7230.840@ V =1.8VGSESD ProtectedDescriptionsD3The WNM2077 is N-Channel enhancement MOSField Effect Transistor. Uses advanced trenchtechnology and design to provide excellent RDS (ON)1 2with low gate charge. This devi

 0.428. Size:1354K  willsemi
wpm2049.pdf

M2 M2

WPM2049WPM2049Single P-Channel, -20V, -0.51A, Power MOSFET Http://www.sh-willsemi.comGVDS (V) Typical Rds(on) ()S0.480@ VGS=-4.5VD-20 0.620@ VGS=-2.5V0.780@ VGS=-1.8VDFN1006-3LDescriptionsThe WPM2049 is P-Channel enhancement MOSField Effect Transistor. Uses advanced trenchDtechnology and design to provide excellent RDS (ON)with low gate charge. This device is s

 0.429. Size:263K  willsemi
wpm2065.pdf

M2 M2

WPM2065WPM2065Single P-Channel, -20V, -6.9A, Power MOSFET Http://www.sh-willsemi.comD D GV (V) Typical Rds(on) ()DS0.017@ V =-4.5VGSDS-200.022@ V =-2.5VGSD D S0.032@ V =-1.8VGSESD Rating: 4000V HBMDFN2X2-6LDescriptions1 6 DThe WPM2065 is P-Channel enhancement DMOS Field Effect Transistor. Uses advanced trenchD2 5 Dtechnology and design to provi

 0.430. Size:389K  willsemi
wnm2016.pdf

M2 M2

WNM2016WNM2016Http://www.sh-willsemi.com N-Channel, 20V, 3.2A, Power MOSFET VDS (V) Typical RDS(on) (m) D40 @ VGS=4.5V S20 47 @ VGS=2.5V 55 @ VGS=1.8V GSOT-23 DDescriptions3The WNM2016 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable

 0.431. Size:872K  willsemi
wnm2016a.pdf

M2 M2

WNM2016A WNM2016ASingle N-Channel, 20V, 4.7A, Power MOSFET Http://www.sh-willsemi.com V (V) Typical R (m) DS DS(on)33@ V =4.5V GS39@ V =3.1V GS20 44@ V =2.5V GS66@ V =1.8V GSSOT-23 Description D3The WNM2016A is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS(ON)with low gate cha

 0.432. Size:2125K  willsemi
wpm2341a.pdf

M2 M2

WPM2341AWPM2341AP-Channel Enhancement Mode MosfetHttp://www.sh-willsemi.com Features Higher Efficiency Extending Battery Life Miniature SOT23-3 Surface Mount Package3 Super high density cell design for extremely low RDS (ON) 12Applications DC/DC Converter Load Switch SOT 23-3 Battery Powered System LCD Display inverter Power Management in Por

 0.433. Size:1141K  willsemi
wpm2081.pdf

M2 M2

WPM2081 WPM2081 Single P-Channel, -20V, -3.2A, Power MOSFET Http://www.sh-willsemi.com VDS (V) Typical RDS(on) (m) DD43 @ VGS=-4.5V -20 SS55 @ VGS=-2.5V GGSOT-23 Descriptions D The WPM2081 is P-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is

 0.434. Size:852K  willsemi
wpm2026.pdf

M2 M2

WPM2026 WPM2026 Single P-Channel, -20V, -3.2A, Power MOSFET Http://www.sh-willsemi.com VDS (V) Rds(on) ( ) 0.056@ VGS= 4.5V -20 0.069@ VGS= 2.5V 0.086@ VGS= 1.8V SOT-23 Descriptions D The WPM2026 is P-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitab

 0.435. Size:502K  willsemi
wnm2021.pdf

M2 M2

WNM2021WNM2021Http://www.sh-willsemi.com N-Channel, 20V, 0.89A, Small Signal MOSFET VDS (V) Rds(on) ( ) 0.220@ VGS=4.5VD20 0.260@ VGS=2.5VS0.320@ VGS=1.8VGSOT-323 DescriptionsDThe WNM2021 is N-Channel enhancement MOS 3Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable

 0.436. Size:42K  hsmc
hm2907a.pdf

M2 M2

Spec. No. :HE9520 HI-SINCERITY Issued Date : 1997.06.18 Revised Date : 2007.04.17 MICROELECTRONICS CORP. Page No. : 1/4 HM2907A PNP EPITAXIAL PLANAR TRANSISTOR Description The HM2907A is designed for general purpose amplifier and high speed, medium-power switching applications. SOT-89 Features Low collector saturation voltage High speed switching For co

 0.437. Size:87K  hsmc
hm2222a.pdf

M2 M2

Spec. No. :HE9521 HI-SINCERITY Issued Date : 1997.06.18 Revised Date : 2008.08.04 MICROELECTRONICS CORP. Page No. : 1/5 HM2222A NPN EPITAXIAL PLANAR TRANSISTOR Description The HM2222A is designed for general purpose amplifier and high speed, medium-power switching applications. Features SOT-89 Low collector saturation voltage High speed switching For co

 0.438. Size:81K  analog power
am2321pe.pdf

M2 M2

Analog Power AM2321PEP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.079 @ VGS = -4.5V -4.1-20battery-powered product

 0.439. Size:312K  analog power
am90n06-04m2b.pdf

M2 M2

Analog Power AM90N06-04m2BN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)4.2 @ VGS = 10V Low thermal impedance 6090a4.8 @ VGS = 4.5V Fast switching speed Typical Applications: Automotive Systems DC/DC Conversion Circuits Battery Powered Power Tools ABSOLUTE MAXIMUM RATINGS

 0.440. Size:86K  analog power
am20n10-250de.pdf

M2 M2

Analog Power AM20N10-250DEN-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m) ID (A)(rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 280 @ VG = 10V 11Sconverters and power management in portable and 100355 @ VG = 4.5V

 0.441. Size:278K  analog power
am2392n.pdf

M2 M2

Analog Power AM2392NN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) ()VDS (V) ID(A) Low r trench technology DS(on)1.2 @ VGS = 10V0.9 Low thermal impedance 1501.4 @ VGS = 5.5V0.8 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU

 0.442. Size:312K  analog power
am2320ne.pdf

M2 M2

Analog Power AM2320NEN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)18 @ VGS = 4.5V7.0 Low thermal impedance 2021 @ VGS = 2.5V6.5 Fast switching speed SOT-23 Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUT

 0.443. Size:551K  analog power
am20p10-250d.pdf

M2 M2

Analog Power AM20P10-250DP-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC 295 @ VGS = -10V 11converters and power management in portable and -100battery-powered prod

 0.444. Size:290K  analog power
am2308ne.pdf

M2 M2

Analog Power AM2308NEN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)60 @ VGS = 4.5V3.5 Low thermal impedance 3082 @ VGS = 2.5V3.0 Fast switching speed Typical Applications: Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIMUM RATINGS (TA

 0.445. Size:153K  analog power
am20p06-135d.pdf

M2 M2

Analog Power AM20P06-135DP-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC 135 @ VGS = -10V 16converters and power management in portable and -60battery-powered produc

 0.446. Size:287K  analog power
am2391p.pdf

M2 M2

Analog Power AM2391PP-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) ()VDS (V) ID(A) Low r trench technology DS(on)1.2 @ VGS = -10V -0.9 Low thermal impedance -1501.3 @ VGS = -4.5V -0.8 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost c

 0.447. Size:134K  analog power
am2341p.pdf

M2 M2

Analog Power AM2341PP - Channel 40V (D-S) MOSFETThese miniature surface mount MOSFETs utilize High Cell Density process. Low PRODUCT SUMMARYrDS(on) assures minimal power loss and conserves energy, making this device ideal VDS (V) rDS(on) ()ID (A)for use in power management circuitry. 0.082 @ VGS = -10 V -3.2Typical applications are lower voltage -40application, power

 0.448. Size:286K  analog power
am2305p.pdf

M2 M2

Analog Power AM2305PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)43 @ VGS = -4.5V -4.5 Low thermal impedance -20 54 @ VGS = -2.5V -4.1 Fast switching speed 120 @ VGS = -1.8V -2.7Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Ci

 0.449. Size:168K  analog power
am2314n.pdf

M2 M2

Analog Power AM2314NN-Channel 20V (D-S) MOSFETThese miniature surface mount MOSFETsutilize High Cell Density process. Low rDS(on)PRODUCT SUMMARYassures minimal power loss and conserves VDS (V) rDS(on) ()ID (A)energy, making this device ideal for use in 0.032 @ VGS = 4.5 V 4.6power management circuitry. Typical 20applications are power switch, power 0.044 @ VGS = 2.5V

 0.450. Size:294K  analog power
am2339p.pdf

M2 M2

Analog Power AM2339PP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)57 @ VGS = -4.5V -3.9 Low thermal impedance -3089 @ VGS = -2.5V -3.2 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIM

 0.451. Size:239K  analog power
am2313p.pdf

M2 M2

Analog Power AM2313PP - Channel Logic Level MOSFETThese miniature surface mount MOSFETs PRODUCT SUMMARYutilize High Cell Density process. Low VDS (V) rDS(on) ()ID (A)rDS(on) assures minimal power loss and conserves energy, making this device ideal 10 @ VGS = -10 V -0.2-60for use in power management circuitry. 20 @ VGS = -4.5V -0.12Typical applications are voltage contro

 0.452. Size:127K  analog power
am2325p.pdf

M2 M2

Analog Power AM2325PP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to PRODUCT SUMMARYprovide low rDS(on) and to ensure minimal VDS (V) rDS(on) (OHM) ID (A)power loss and heat dissipation. Typical 0.055 @ VGS = -4.5V -3.6applications are DC-DC converters and power management in portable and -200.089 @ VGS = -2.5V

 0.453. Size:188K  analog power
am2306n.pdf

M2 M2

Analog Power AM2306NN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m()ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 58 @ VGS = 10V 3.5circuitry. Typical applications are PWMDC-DC 30converters, power management in p

 0.454. Size:139K  analog power
am20p02-60d.pdf

M2 M2

Analog Power AM20P02-60DP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARYminimal power loss and conserves energy, making VDS (V) rDS(on) m()ID (A)this device ideal for use in power management circuitry. Typical applications are PWMDC-DC 59 @ VGS = -4.5V 24-20converters, power management in

 0.455. Size:232K  analog power
am2300n.pdf

M2 M2

Analog Power AM2300NN-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs PRODUCT SUMMARYutilize High Cell Density process. Low rDS(on)assures minimal power loss and conserves VDS (V) rDS(on) ()ID (A)energy, making this device ideal for use in 0.035 @ VGS = 4.5V 4.320power management circuitry. Typical 0.050 @ VGS = 2.5V 3.5applications are DC-DC converters,

 0.456. Size:286K  analog power
am2344n.pdf

M2 M2

Analog Power AM2344NN-Channel 40-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)26 @ VGS = 10V5.8 Low thermal impedance 4035 @ VGS = 4.5V5.0 Fast switching speed SOT-23 Typical Applications: Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIMUM RATI

 0.457. Size:290K  analog power
am2308n.pdf

M2 M2

Analog Power AM2308NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)60 @ VGS = 4.5V3.8 Low thermal impedance 3082 @ VGS = 2.5V3.3 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 0.458. Size:295K  analog power
am2334ne.pdf

M2 M2

Analog Power AM2334NEN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)60 @ VGS = 4.5V3.5 Low thermal impedance 3082 @ VGS = 2.5V3.0 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 0.459. Size:133K  analog power
am2398n.pdf

M2 M2

Analog Power AM2398NN-Channel 60V (D-S) MOSFETThese miniature surface mount MOSFETsutilize High Cell Density process. Low rDS(on)PRODUCT SUMMARYassures minimal power loss and conserves VDS (V) rDS(on) ()ID (A)energy, making this device ideal for use in 0.194 @ VGS = 10 V 2.2power management circuitry. Typical 60applications are power switch, power 0.273 @ VGS = 4.5V 1

 0.460. Size:306K  analog power
am20p15-295d.pdf

M2 M2

Analog Power AM20P15-295DP-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)295 @ VGS = -10V -10.7 Low thermal impedance -150580 @ VGS = -5.5V -7.6 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOL

 0.461. Size:299K  analog power
am2305pe.pdf

M2 M2

Analog Power AM2305PEP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)43 @ VGS = -4.5V -4.5 Low thermal impedance -20 54 @ VGS = -2.5V -4.1 Fast switching speed 120 @ VGS = -1.8V -2.7Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion C

 0.462. Size:293K  analog power
am2314ne.pdf

M2 M2

Analog Power AM2314NEN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)32 @ VGS = 4.5V5.3 Low thermal impedance 2044 @ VGS = 2.5V4.5 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 0.463. Size:287K  analog power
am2359pe.pdf

M2 M2

Analog Power AM2359PEP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)700 @ VGS = -10V -1.2 Low thermal impedance -60800 @ VGS = -4.5V -1.1 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MA

 0.464. Size:245K  analog power
am2303p.pdf

M2 M2

Analog Power AM2303PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low VDS (V) rDS(on) (OHM) ID (A)rDS(on) and to ensure minimal power loss and heat 0.100 @ VGS = -4.5V -2.9dissipation. Typical applications are DC-DC converters and power management in portable and -20 0.160 @ VGS = -2.5V -

 0.465. Size:133K  analog power
am2328n.pdf

M2 M2

Analog Power AM2328NN-Channel 20V (D-S) MOSFETThese miniature surface mount MOSFETsutilize High Cell Density process. Low rDS(on)PRODUCT SUMMARYassures minimal power loss and conserves VDS (V) rDS(on) ()ID (A)energy, making this device ideal for use in 0.025 @ VGS = 4.5 V 5.9power management circuitry. Typical 20applications are power switch, power 0.035 @ VGS = 2.5V

 0.466. Size:280K  analog power
am2340n.pdf

M2 M2

Analog Power AM2340NN-Channel 40-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)43 @ VGS = 10V5.2 Low thermal impedance 4064 @ VGS = 4.5V3.7 Fast switching speed Typical Applications: SOT-23 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE

 0.467. Size:300K  analog power
am20p15-160d.pdf

M2 M2

Analog Power AM20P15-160DP-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)160 @ VGS = -10V -15 Low thermal impedance -150173 @ VGS = -5.5V -14 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUT

 0.468. Size:305K  analog power
am20n10-350d.pdf

M2 M2

Analog Power AM20N10-350DN-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)420 @ VGS = 10V9.0 Low thermal impedance 100460 @ VGS = 5.5V8.6 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE

 0.469. Size:27K  analog power
am2345p.pdf

M2 M2

Analog Power AM2345PP - Channel 40V (D-S) MOSFETThese miniature surface mount MOSFETsutilize a high cell density trench process to PRODUCT SUMMARYprovide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical VDS (V) rDS(on) (O) ID (A)applications are DC-DC converters and 0.164 @ V = -10 V -3.2GSpower management in portable and -40battery-powered pr

 0.470. Size:26K  analog power
am2342n.pdf

M2 M2

Analog Power AM2342NN-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m(O) ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 86 @ V = 10V 5.2GSconverters and power management in portable and 40battery-powered products s

 0.471. Size:283K  analog power
am2343p.pdf

M2 M2

Analog Power AM2343PP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)57 @ VGS = -10V -3.9 Low thermal impedance -3089 @ VGS = -4.5V -3.2 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU

 0.472. Size:288K  analog power
am2358n.pdf

M2 M2

Analog Power AM2358NN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)92 @ VGS = 10V3.1 Low thermal impedance 60107 @ VGS = 4.5V2.9 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 0.473. Size:140K  analog power
am20p03-60d.pdf

M2 M2

Analog Power AM20P03-60DP-Channel 32-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 59 @ VGS = -10V 24-32battery-powered products s

 0.474. Size:302K  analog power
am2307pe.pdf

M2 M2

Analog Power AM2307PEP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYrDS(on) (m)VDS (V) ID(A)31 @ VGS = -4.5V -5.2Key Features: 44 @ VGS = -2.5V -4.4 Low r trench technology DS(on)-2056 @ VGS = -1.8V -3.9 Low thermal impedance 83 @ VGS = -1.5V -3.2 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Indust

 0.475. Size:289K  analog power
am2394ne.pdf

M2 M2

Analog Power AM2394NEN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)1200 @ VGS = 10V0.9 Low thermal impedance 1501300 @ VGS = 4.5V0.8 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MA

 0.476. Size:175K  analog power
am2328ne.pdf

M2 M2

Analog Power AM2328NEN-Channel 20V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.022 @ VGS = 4.5 V 6.5battery-powered products su

 0.477. Size:287K  analog power
am20n10-115d.pdf

M2 M2

Analog Power AM20N10-115DN-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)115 @ VGS = 10V17 Low thermal impedance 100135 @ VGS = 4.5V16 Fast switching speed Typical Applications: LED Inverter Circuits DC/DC Conversion Circuits Motor drives ABSOLUTE MAXIMUM RATINGS (TA = 2

 0.478. Size:108K  analog power
am2302ne.pdf

M2 M2

Analog Power AM2302NEN-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to PRODUCT SUMMARYprovide low rDS(on) and to ensure minimal VDS (V) rDS(on) () ID (A)power loss and heat dissipation. Typical applications are DC-DC converters and 0.076 @ VGS = 4.5V 3.420power management in portable and 0.103 @ VGS = 2.5V 2

 0.479. Size:323K  analog power
am20n15-250b.pdf

M2 M2

Analog Power AM20N15-250BN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)200 @ VGS = 10V Low thermal impedance 15021a225 @ VGS = 5.5V Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIM

 0.480. Size:287K  analog power
am2343pe.pdf

M2 M2

Analog Power AM2343PEP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)57 @ VGS = -10V -3.9 Low thermal impedance -3089 @ VGS = -4.5V -3.2 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI

 0.481. Size:306K  analog power
am2301p.pdf

M2 M2

Analog Power AM2301PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)130 @ VGS = -4.5V -2.6 Low thermal impedance -20190 @ VGS = -2.5V -2.2 Fast switching speed SOT-23 Typical Applications: Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLE

 0.482. Size:283K  analog power
am2371p.pdf

M2 M2

Analog Power AM2371PP-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features:rDS(on) ()VDS (V) ID(A) Low r trench technologyDS(on)1.2 @ VGS = -10V -1 Low thermal impedance-1001.3 @ VGS = -4.5V -0.9 Fast switching speedTypical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost converters

 0.483. Size:276K  analog power
am2390n.pdf

M2 M2

Analog Power AM2390NN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) ()VDS (V) ID(A) Low r trench technology DS(on)0.7 @ VGS = 10V1.1 Low thermal impedance 1501.2 @ VGS = 4.5V0.8 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost conv

 0.484. Size:84K  analog power
am2301pe.pdf

M2 M2

Analog Power AM2301PEP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.130 @ VGS = -4.5V -2.6-20battery-powered product

 0.485. Size:168K  analog power
am2334n.pdf

M2 M2

Analog Power AM2334NN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 60 @ VGS = 4.5V 3.5converters and power management in portable and 30battery-powered products s

 0.486. Size:315K  analog power
am20n15-250d.pdf

M2 M2

Analog Power AM20N15-250DN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)255 @ VGS = 10V12 Low thermal impedance 150290 @ VGS = 4.5V11 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost

 0.487. Size:202K  analog power
am2330ne.pdf

M2 M2

Analog Power AM2330NEN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC 32 @ VGS = 10V 5.2converters and power management in portable and 30battery-powered products suc

 0.488. Size:334K  analog power
am20n06-90i.pdf

M2 M2

Analog Power AM20N06-90IN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)94 @ VGS = 10V19 Low thermal impedance 60109 @ VGS = 4.5V18 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU

 0.489. Size:176K  analog power
am2345pe.pdf

M2 M2

Analog Power AM2345PEP - Channel 40V (D-S) MOSFETThese miniature surface mount MOSFETsutilize a high cell density trench process to PRODUCT SUMMARYprovide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical VDS (V) rDS(on) ()ID (A)applications are DC-DC converters and 0.164 @ VGS = -10 V -3.2power management in portable and -40battery-powered pr

 0.490. Size:139K  analog power
am20n06-90d.pdf

M2 M2

Analog Power AM20N06-90DN-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m() ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 94 @ VGS = 10V 19circuitry. Typical applications are PWMDC-DC 60109 @ VGS = 4.5V 18converters

 0.491. Size:238K  analog power
am2310n.pdf

M2 M2

Analog Power AM2310NN-Channel Logic Level MOSFETThese miniature surface mount MOSFETs PRODUCT SUMMARYutilize High Cell Density process. Low rDS(on) assures minimal power loss and VDS (V) rDS(on) ()ID (A)conserves energy, making this device ideal 0.065 @ VGS = 4.5V 2.2for use in power management circuitry. 300.082 @ VGS = 2.5V 2.0Typical applications are lower voltage

 0.492. Size:81K  analog power
am20n20-125d.pdf

M2 M2

Analog Power AM20N20-125DN-Channel 200-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 260 @ VGS = 10V 12converters and power management in portable and 200300 @ VGS = 5.5V 11

 0.493. Size:94K  analog power
am2360n.pdf

M2 M2

Analog Power AM2360NN-Channel 55V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) () ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.160 @ VGS = 4.5 V 2.4battery-powered products su

 0.494. Size:293K  analog power
am20p06-175i.pdf

M2 M2

Analog Power AM20P06-175IP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)175 @ VGS = -10V -14 Low thermal impedance -60200 @ VGS = -4.5V -13 Fast switching speed Typical Applications: TO-251 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits

 0.495. Size:291K  analog power
am2336n.pdf

M2 M2

Analog Power AM2336NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)32 @ VGS = 4.5V5.3 Low thermal impedance 3064 @ VGS = 2.5V3.7 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 0.496. Size:289K  analog power
am2337p.pdf

M2 M2

Analog Power AM2337PP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)112 @ VGS = -4.5V -2.8 Low thermal impedance -30172 @ VGS = -2.5V -2.3 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAX

 0.497. Size:289K  analog power
am2359p.pdf

M2 M2

Analog Power AM2359PP-Channel -60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)381 @ VGS = -10V -1.6 Low thermal impedance -60561 @ VGS = -4.5V -1.3 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAX

 0.498. Size:289K  analog power
am20n10-250d.pdf

M2 M2

Analog Power AM20N10-250DN-Channel 100-V (D-S) MOSFET PRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)280 @ VGS = 10V11 Low thermal impedance 100355 @ VGS = 4.5V10 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost

 0.499. Size:304K  analog power
am2304n.pdf

M2 M2

Analog Power AM2304NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)12 @ VGS = 10V8.5 Low thermal impedance 3018 @ VGS = 4.5V7.0 Fast switching speed Typical Applications: Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIMUM RATINGS (TA =

 0.500. Size:293K  analog power
am2374n.pdf

M2 M2

Analog Power AM2374NN-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)92 @ VGS = 10V3.1 Low thermal impedance 10099 @ VGS = 4.5V3.0 Fast switching speed Typical Applications: SOT-23 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE

 0.501. Size:174K  analog power
am25p03-60d.pdf

M2 M2

Analog Power AM25P03-60DP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARYminimal power loss and conserves energy, making VDS (V) rDS(on) m()ID (A)this device ideal for use in power management circuitry. Typical applications are PWMDC-DC 59 @ VGS = -4.5V 24-26.5converters, power management

 0.502. Size:139K  analog power
am20p02-99d.pdf

M2 M2

Analog Power AM20P02-99DP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARYminimal power loss and conserves energy, making VDS (V) rDS(on) (m)ID (A)this device ideal for use in power management circuitry. Typical applications are PWMDC-DC 118 @ VGS = -4.5V 17-20converters, power management i

 0.503. Size:201K  analog power
am2324n.pdf

M2 M2

Analog Power AM2324NN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYThese miniature surface mount MOSFETs utilize a high cell density trench process to VDS (V) rDS(on) () ID (A)provide low rDS(on) and to ensure minimal 0.047 @ VGS = 4.5V 4.3power loss and heat dissipation. Typical 200.055@ VGS = 2.5V 4.0applications are DC-DC converters and power management in portable and

 0.504. Size:288K  analog power
am2361p.pdf

M2 M2

Analog Power AM2361PP-Channel -60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)210 @ VGS = -10V -3.4 Low thermal impedance -60250 @ VGS = -4.5V -2.8 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAX

 0.505. Size:284K  analog power
am2362n.pdf

M2 M2

Analog Power AM2362NN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)27 @ VGS = 10V5.7 Low thermal impedance 6033 @ VGS = 4.5V5.2 Fast switching speed Typical Applications: SOT-23 DC/DC Conversion Circuits Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTHERWISE NOTED)

 0.506. Size:286K  analog power
am2319p.pdf

M2 M2

Analog Power AM2319PP - Channel Logic Level MOSFETThese miniature surface mount MOSFETs utilize High Cell Density process. Low PRODUCT SUMMARYrDS(on) assures minimal power loss and VDS (V) rDS(on) ()ID (A)conserves energy, making this device ideal for use in power management circuitry. 0.20 @ VGS = -10 V -2.1-30Typical applications are voltage control 0.30 @ VGS = -4.

 0.507. Size:285K  analog power
am2318n.pdf

M2 M2

Analog Power AM2318NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)160 @ VGS = 10V2.4 Low thermal impedance 30250 @ VGS = 4.5V1.9 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU

 0.508. Size:303K  analog power
am2381p.pdf

M2 M2

Analog Power AM2381PP-Channel 80-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)800 @ VGS = -10V -1.1 Low thermal impedance -80900 @ VGS = -4.5V -1.0 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI

 0.509. Size:209K  analog power
am2327p.pdf

M2 M2

Analog Power AM2327PP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) (OHM) ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 0.052 @ VGS = -4.5V -3.6circuitry. Typical applications are DC-DC converters, power management in po

 0.510. Size:291K  analog power
am2370n.pdf

M2 M2

Analog Power AM2370NN-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)280 @ VGS = 10V1.5 Low thermal impedance 100355 @ VGS = 4.5V1.3 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost con

 0.511. Size:175K  analog power
am2398ne.pdf

M2 M2

Analog Power AM2398NEN-Channel 60V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.194 @ VGS = 10 V 2.2battery-powered products suc

 0.512. Size:276K  analog power
am2373p.pdf

M2 M2

Analog Power AM2373PP-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) ()VDS (V) ID (A) Low r trench technology DS(on)6 @ VGS = -10V -0.39 Low thermal impedance -1006.5 @ VGS = -4.5V -0.37 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost

 0.513. Size:73K  analog power
am20n10-130d.pdf

M2 M2

Analog Power AM20N10-130DN-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 130 @ VGS = 10V 17converters and power management in portable and 100160 @ VGS = 4.5V 15

 0.514. Size:133K  analog power
am2329p.pdf

M2 M2

Analog Power AM2329PP-Channel 30V (D-S) MOSFETThese miniature surface mount MOSFETsutilize High Cell Density process. Low rDS(on)PRODUCT SUMMARYassures minimal power loss and conserves VDS (V) rDS(on) ()ID (A)energy, making this device ideal for use in 0.112 @ VGS = 10 V 2.5power management circuitry. Typical -30applications are power switch, power 0.172 @ VGS = 4.5V

 0.515. Size:141K  analog power
am20p03-60i.pdf

M2 M2

Analog Power AM20P03-60IP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARYminimal power loss and conserves energy, making VDS (V) rDS(on) m()ID (A)this device ideal for use in power management circuitry. Typical applications are PWMDC-DC 59 @ VGS = -10V 24-30converters, power management in

 0.516. Size:285K  analog power
am2302n.pdf

M2 M2

Analog Power AM2302NN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)76 @ VGS = 4.5V3.4 Low thermal impedance 20103 @ VGS = 2.5V3.0 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 0.517. Size:245K  analog power
am2323p.pdf

M2 M2

Analog Power AM2323PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low VDS (V) rDS(on) (OHM) ID (A)rDS(on) and to ensure minimal power loss and heat 0.100 @ VGS = -4.5V -2.9dissipation. Typical applications are DC-DC converters and power management in portable and -20 0.160 @ VGS = -2.5V -

 0.518. Size:241K  analog power
am2322n.pdf

M2 M2

Analog Power AM2322NN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC VDS (V) rDS(on) ()ID (A)converters and power management in portable and 0.085 @ VGS = 10V 2.5battery-powered products such

 0.519. Size:134K  analog power
am2326n.pdf

M2 M2

Analog Power AM2326NN-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETsPRODUCT SUMMARYutilize High Cell Density process. Low VDS (V) rDS(on) ()ID (A)rDS(on) assures minimal power loss and 0.070 @ VGS = 4.5V 2.2conserves energy, making this device ideal for use in power management circuitry. 200.080@ VGS = 2.5V 2.0Typical applications are DC-DC 0.120@ VG

 0.520. Size:303K  analog power
am2347p.pdf

M2 M2

Analog Power AM2347PP-Channel 40-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)39 @ VGS = -10V -4.8 Low thermal impedance -4055 @ VGS = -4.5V -4.0 Fast switching speed SOT-23 Typical Applications: Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS

 0.521. Size:207K  analog power
am20p04-60d.pdf

M2 M2

Analog Power AM20P04-60DP-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC 69 @ VGS = -10V 22converters and power management in portable and -40battery-powered products

 0.522. Size:236K  analog power
am2317p.pdf

M2 M2

Analog Power AM2317PP - Channel Logic Level MOSFETThese miniature surface mount MOSFETs PRODUCT SUMMARYutilize a high cell density trench process to VDS (V) rDS(on) () ID (A)provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical 0.30 @ VGS = -10 V -1.0-30applications are DC-DC converters and 0.50 @ VGS = -4.5V -0.9power management in portable

 0.523. Size:61K  analog power
am2372n.pdf

M2 M2

Analog Power AM2372NN-Channel 100V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) () ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 2 @ VGS = 10 V 0.7battery-powered products such a

 0.524. Size:170K  analog power
am2340ne.pdf

M2 M2

Analog Power AM2340NEN-Channel 40-V (D-S) MOSFETPRODUCT SUMMARYThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat 43 @ VGS = 10V 5.2dissipation. Typical applications are DC-DC converters and power management in portable and 40 50 @ VGS = 4.5V 4.2batter

 0.525. Size:172K  analog power
am2342ne.pdf

M2 M2

Analog Power AM2342NEN-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 86 @ VGS = 10V 5.2converters and power management in portable and 40battery-powered products s

 0.526. Size:93K  analog power
am2330n.pdf

M2 M2

Analog Power AM2330NN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m() ID (A)dissipation. Typical applications are DC-DC 32 @ VGS = 10V 5.2converters and power management in portable and 30battery-powered products suc

 0.527. Size:308K  analog power
am2321p.pdf

M2 M2

Analog Power AM2321PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)79 @ VGS = -4.5V -4.1 Low thermal impedance -20110 @ VGS = -2.5V -3.3 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI

 0.528. Size:165K  analog power
am2358ne.pdf

M2 M2

Analog Power AM2358NEN-Channel 60V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.092 @ VGS = 10 V 3.1battery-powered products suc

 0.529. Size:172K  analog power
am2332n.pdf

M2 M2

Analog Power AM2332NN-Channel 20V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.058 @ VGS = 4.5 V 4.7battery-powered products suc

 0.530. Size:206K  analog power
am2306ne.pdf

M2 M2

Analog Power AM2306NEN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m()ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 58 @ VGS = 10V 3.5circuitry. Typical applications are PWMDC-DC 30converters, power management in

 0.531. Size:291K  analog power
am20n10-180d.pdf

M2 M2

Analog Power AM20N10-180DN-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)180 @ VGS = 10V14 Low thermal impedance 100190 @ VGS = 4.5V13 Fast switching speed Typical Applications: LED Inverter Circuits DC/DC Conversion Circuits Motor drives ABSOLUTE MAXIMUM RATINGS (TA = 2

 0.532. Size:290K  analog power
am2312n.pdf

M2 M2

Analog Power AM2312NN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)10 @ VGS = 4.5V9.4 Low thermal impedance 2013 @ VGS = 2.5V8.2 Fast switching speed Typical Applications: SOT-23 Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIMUM RATIN

 0.533. Size:403K  shenzhen
apm2317.pdf

M2 M2

Shenzhen Tuofeng Semiconductor Technology Co., LtdAPM2317 P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-4.5A ,RDS(ON)=28m (typ.) @ VGS=-4.5VRDS(ON)=38m (typ.) @ VGS=-2.5V RDS(ON)=55m (typ.) @ VGS=-1.8V Super High Dense Cell Design Reliable and RuggedS Lead Free and Green Devices Available(RoHS Compliant)Applications G Power Management

 0.534. Size:168K  anpec
apm2510nu.pdf

M2 M2

APM2510NUN-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/50A,RDS(ON)=8.5m (typ.) @ VGS=10VG DRDS(ON)=15m (typ.) @ VGS=4.5VS Super High Dense Cell Design Avalanche Rated Top View of TO-252 Reliable and RuggedD Lead Free and Green Devices Available (RoHS Compliant)ApplicationsG Power Management in Desktop Computer orDC/DC ConvertersSN-Ch

 0.535. Size:355K  anpec
apm2054n.pdf

M2 M2

APM2054N N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/12A, RDS(ON)=35m(typ.) @ VGS=10VRDS(ON)=45m(typ.) @ VGS=4.5VRDS(ON)=110m(typ.) @ VGS=2.5V1 2 31 2 3 Super High Dense Cell Design High Power and Current Handling Capability G D SG D S TO-252, SOT-89 and SOT-223 Packages To

 0.536. Size:168K  anpec
apm2556nu.pdf

M2 M2

APM2556NUN-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/60A,RDS(ON)=4.5m (typ.) @ VGS=10VG DRDS(ON)=7.5m (typ.) @ VGS=4.5V Super High Dense Cell DesignS Reliable and Rugged Top View of TO-252 Lead Free and Green Devices AvailableD (RoHS Compliant)ApplicationsG Power Management in Desktop Computer orDC/DC ConvertersSN-Channel MOSFET

 0.537. Size:200K  anpec
apm2509nu.pdf

M2 M2

APM2509NUN-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/50A , RDS(ON)=7.5m(typ.) @ VGS=10V RDS(ON)=13m(typ.) @ VGS=4.5V Super High Dense Cell Design Avalanche Rated Top View of TO-252 Reliable and RuggedD Lead Free Available (RoHS Compliant)ApplicationsG Power Management in Desktop Computer or DC/DC ConvertersSN-Channel MOSFETOrderi

 0.538. Size:148K  anpec
apm2014n.pdf

M2 M2

APM2014NN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/30A , RDS(ON)=12m(typ.) @ VGS=4.5V RDS(ON)=18m(typ.) @ VGS=2.5V Super High Dense Cell Design for ExtremelyLow RDS(ON)1 2 3 Reliable and Rugged TO-252 PackageG D S Top View of TO-252Applications Power Management in Comput

 0.539. Size:147K  anpec
apm2071pd.pdf

M2 M2

APM2071PD P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-4A, RDS(ON)=50m(typ.) @ VGS=-4.5VG RDS(ON)=75m(typ.) @ VGS=-2.5VDS Super High Dense Cell Design Top View of SOT-89 Reliable and Rugged (2) Lead Free and Green Devices AvailableD (RoHS Compliant)Applications(1)G DC/DC ConvertersS(3)P-Channel MOSFETOrdering and Marki

 0.540. Size:133K  anpec
apm2318a.pdf

M2 M2

APM2318AN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/3A ,DRDS(ON)=35m(typ.) @ VGS=10VRDS(ON)=40m(typ.) @ VGS=4.5VGRDS(ON)=60m(typ.) @ VGS=2.5VS Super High Dense Cell Design Top View of SOT-23 Reliable and Rugged Lead Free Available (RoHS Compliant)DApplicationsG Power Management in

 0.541. Size:138K  anpec
apm2030.pdf

M2 M2

APM2030NN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A , RDS(ON)=35m(typ.) @ VGS=4.5VRDS(ON)=38m(typ.) @ VGS=2.5V Super High Dense Cell Design for ExtremelyLow RDS(ON)1 2 3 Reliable and Rugged TO-252 PackageG D S Top View of TO-252Applications Power Management in Computer

 0.542. Size:180K  anpec
apm2513nu.pdf

M2 M2

APM2513NUN-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/40A,RDS(ON)=10.5m (typ.) @ VGS=10VG DRDS(ON)=16m (typ.) @ VGS=4.5V Super High Dense Cell Design S Avalanche Rated Top View of TO-252 Reliable and RuggedD Lead Free and Green Devices Available(RoHS Compliant)GApplications Power Management in Desktop Computer orSDC/DC ConvertersN-Cha

 0.543. Size:2138K  goford
xm2n200.pdf

M2 M2

GOFORDXM2N200.DDescription The XM2N200.uses advanced trench technology and Gdesign to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features SSchematic diagram VDSS RDS(ON) ID @10V (typ) 190V 356.6m 2A High density cell design for ultra low Rdson Fully characterized avalanche voltage an

 0.544. Size:180K  samhop
stm201n.pdf

M2 M2

GreenProductSTM201NaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) TypVDSS IDRugged and reliable.110 @ VGS=10VSuface Mount Package.100V 4A170 @ VGS=4.5VS O-81C(TA=25 unless otherwise noted)ABSOLUTE MAXIMUM RATINGSSym

 0.545. Size:434K  silikron
ssfm2506.pdf

M2 M2

SSFM2506 Main Product Characteristics: VDSS 25V RDS(on) 4.1mohm(typ.) ID 60A Sch emati c di ag ram TO-252 (D-PAK) Mar ki ng a nd pin Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and revers

 0.546. Size:140K  can-sheng
m28s sot-23.pdf

M2

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors M28S TRANSISTOR (NPN) FEATURES Power dissipation Pcm:0.625WTamb=25 MARKING:28S MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units

 0.547. Size:1166K  blue-rocket-elect
m28m.pdf

M2 M2

M28M(BR3DG28M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features High IC,, high hFE. / Applications Use in audio output driver stage amplifier applications. /

 0.548. Size:1383K  nell
nsgm200gb120b.pdf

M2 M2

SEMICONDUCTOR5. Small temperature dependence of the turn-off switching loss48.525 25C2E1 E2 C13-M693+0.3 4- 6.5108+0.514 14 14 2.84-0.5All dimensions in millimeters271517.848+0.362.5+0.5G1 E1E2 G230.930.522.5SEMICONDUCTORSEMICONDUCTORSEMICONDUCTORSEMICONDUCTORSEMICONDUCTOR

 0.549. Size:260K  shantou-huashan
hm28s.pdf

M2

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HM28S APPLICATIONS General Purpose And Switching Applications. ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150 TjJunction Temperature150 PCCollector Dissip ation

 0.550. Size:203K  sino
sm2607csc.pdf

M2 M2

SM2607CSC Dual Enhancement Mode MOSFET (N- and P-Channel)Features Pin Description N-Channel 20V/5A,D2 RDS(ON)=38m(max.) @ VGS=4.5VS1D1G2 RDS(ON)=54m(max.) @ VGS=2.5VS2G1 RDS(ON)=85m(max.) @ VGS=1.8V P-ChannelTop View of SOT-23-6 -20V/-3.3A, RDS(ON)=85m(max.) @ VGS=-4.5V(4)D2(6)D1RDS(ON)=120m(max.) @ VGS=-2.5VRDS(ON)=210m(max.)

 0.551. Size:182K  sino
sm2217psqg.pdf

M2 M2

SM2217PSQGP-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-9.9A,SDRDS(ON) = 17m(max.) @ VGS =-4.5V DDRDS(ON) = 25m(max.) @ VGS =-2.5VRDS(ON) = 40m(max.) @ VGS =-1.8V GSPin 1DD Reliable and RuggedDFN2x2-6 Lead Free and Green Devices Available(RoHS Compliant)(1,2,5,6)DDDD HBM ESD protection level pass 2KVNote : The diode connec

 0.552. Size:259K  sino
sm2014nsu.pdf

M2 M2

SM2014NSUN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/13.8A,DRDS(ON)= 19.5m (max.) @ VGS=4.5VSRDS(ON)= 27m (max.) @ VGS=2.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-3(RoHS Compliant) ESD Protection. D (2)ApplicationsG (1) Power Management in Notebook Computer,Portable Equipment and Battery PoweredSyste

 0.553. Size:265K  sino
sm2518nsuc.pdf

M2 M2

SM2518NSUCN-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/50A,RDS(ON)=9.5m (max.) @ VGS=10VRDS(ON)=14.5m (max.) @ VGS=4.5VSD Reliable and Rugged G Avalanche Rated Lead Free and Green Devices AvailableTop View of TO-251S(RoHS Compliant)D 100% UIS + Rg TestedGApplications Power Management in Desktop Computer or DC/DC Converters.SN-Channel

 0.554. Size:257K  sino
sm2337psa.pdf

M2 M2

SM2337PSAP-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-5.5A,RDS(ON) = 34m (max.) @ VGS =-4.5VDRDS(ON) = 50m (max.) @ VGS =-2.5VSRDS(ON) = 75m (max.) @ VGS =-1.8VG Reliable and RuggedTop View of SOT-23-3 Lead Free and Green Devices Available(RoHS Compliant) HBM ESD protection level pass 2KV DNote : The diode connected between the gate andsour

 0.555. Size:161K  sino
sm2690nsc.pdf

M2 M2

SM2690NSCN-Channel Enhancement Mode MOSFETFeatures Pin Description 150V/1.6A,SDRDS(ON)= 360m(max.) @ VGS=10VDG Reliable and RuggedDD Lead Free and Green Devices Available(RoHS Compliant)Top View of SOT-23-6 ESD Protection(1,2,5,6)DDDDApplications(3)G For POE Power Primary Side Switch for LowPower DC/DC Converters.(4)SN-Channel MOSFETOrderin

 0.556. Size:305K  sino
sm2603psc.pdf

M2 M2

SM2603PSCP-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-4.3A,SRDS(ON)= 48m (max.) @ VGS=-4.5VDDRDS(ON)= 68m (max.) @ VGS=-2.5VGDRDS(ON)= 100m (max.) @ VGS=-1.8VD Reliable and RuggedTop View of SOT-23-6 Lead Free and Green Devices Available(RoHS Compliant)(1,2,5,6)DD DDApplications Power Management in Notebook Computer,Portable Equip

 0.557. Size:174K  sino
sm2a18dsk.pdf

M2 M2

SM2A18DSK Dual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1D1D2 200V/0.9A,D2RDS(ON)= 1140m(max.) @ VGS= 10V RDS(ON)= 1300m(max.) @ VGS= 4.5VS1G1 ESD protectedS2G2 100% UIS + Rg TestedTop View of SOP-8 Reliable and Rugged Lead Free and Green Devices AvailableD1 D1 D2 D2 (RoHS Compliant)ApplicationsG1 G2 Power Management in D

 0.558. Size:164K  sino
sm2421psan.pdf

M2 M2

SM2421PSAN P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD -30V/-4.8A,RDS(ON)= 56m (Max.) @ VGS=-10V SRDS(ON)= 68m (Max.) @ VGS=-4.5VG RDS(ON)= 94m (Max.) @ VGS=-2.5V Super High Dense Cell DesignTop View of SOT-23N Reliable and RuggedS Lead Free and Green Devices Available(RoHS Compliant)ApplicationsG Power Management in Notebook Comp

 0.559. Size:497K  sino
apm2304a.pdf

M2 M2

APM2304A N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/5A,D RDS(ON)= 22m(typ.) @ VGS= 10VS RDS(ON)= 32m(typ.) @ VGS= 4.5VG Super High Dense Cell Design Top View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices AvailableD (RoHS Compliant)ApplicationsG Power Management in Notebook Computer,Portable Equipment and Battery Power

 0.560. Size:257K  sino
sm2306nsa.pdf

M2 M2

SM2306NSA N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/4.7A,D RDS(ON)=40m (max.) @ VGS=10VS RDS(ON)=60m (max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-3(RoHS Compliant)DApplicationsG Power Management in Notebook Computer,Portable Equipment and Battery Powered Systems.S Load SwitchN-Chann

 0.561. Size:171K  sino
sm2f04nsu.pdf

M2 M2

SM2F04NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 250V/10A,DRDS(ON)= 300m (Max.) @ VGS=10VS Reliable and RuggedG Lead Free and Green Devices Available(RoHS Compliant) Top View of TO-252-3DApplicationsG Power Management in TV Inverter.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM2F04NS U : TO-252-3Assembly

 0.562. Size:185K  sino
sm2202nsqe.pdf

M2 M2

SM2202NSQEN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 30V/8.4A,DDRDS(ON) = 15.5m(max.) @ VGS =10VRDS(ON) = 21m(max.) @ VGS =4.5V GSD Pin 1D Avalanche RatedTDFN2x2-6 Reliable and Rugged Lead Free and Green Devices Available(1,2,5,6)DD DD(RoHS Compliant) 100% UIS TestedApplications(3)G Power Management in Notebook Computer,

 0.563. Size:164K  sino
sm2326nsan.pdf

M2 M2

SM2326NSANN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/3A,DRDS(ON)= 70m(max.) @ VGS= 4.5VSRDS(ON)= 90m(max.) @ VGS= 2.5VGRDS(ON)= 110m(max.) @ VGS= 1.8VTop View of SOT-23N Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in DC/AC Inverter SystemsS DC-DC Converter

 0.564. Size:238K  sino
sm2f05nsu.pdf

M2 M2

SM2F05NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 250V/7.4A,DRDS(ON)= 390m (Max.) @ VGS=10VS 100% UIS + Rg TestedG Reliable and RuggedTop View of TO-252-2 Lead Free and Green Devices Available(RoHS Compliant)DApplicationsG Power Management in TV Inverter.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM2F05NS U : TO

 0.565. Size:165K  sino
sm2319psan.pdf

M2 M2

SM2319PSANP-Channel Enhancement Mode MOSFETFeatures Pin Description -40V/-3A,DRDS(ON)= 80m(max.) @ VGS= -10VSRDS(ON)= 120m(max.) @ VGS= -4.5VG Reliable and RuggedTop View of SOT-23N Lead Free and Green Devices Available(RoHS Compliant)DApplicationsG Load Switch. DC/DC Converter.SP-Channel MOSFETOrdering and Marking InformationPackage

 0.566. Size:179K  sino
sm2207psqg.pdf

M2 M2

SM2207PSQGP-Channel Enhancement Mode MOSFETFeatures Pin Description -12V/-8.7A,SDDDRDS(ON) = 22m(max.) @ VGS =-4.5VRDS(ON) = 30m(max.) @ VGS =-2.5VG SPin 1RDS(ON) = 38m(max.) @ VGS =-1.8VDDRDS(ON) = 57m(max.) @ VGS =-1.5VDFN2x2-6 Reliable and Rugged(1,2,5,6) Lead Free and Green Devices AvailableDD DD(RoHS Compliant)Applications(3)G

 0.567. Size:256K  sino
sm2327psa.pdf

M2 M2

SM2327PSAP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-4A, DRDS(ON)=56m (max.) @ VGS=-10VSRDS(ON)=70m (max.) @ VGS=-4.5VGRDS(ON)=100m (max.) @ VGS=-2.5VTop View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in LCD TV, Monitor,SNotebook Computer, Portable Equipment and

 0.568. Size:259K  sino
sm2317psa.pdf

M2 M2

SM2317PSA P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-4.6A , DRDS(ON)= 48m (Max.) @ VGS=-4.5VSRDS(ON)= 70m (Max.) @ VGS=-2.5VGRDS(ON)=110m (Max.) @ VGS=-1.8VTop View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices Available(RoHS Compliant)DApplicationsG Power Management in Notebook Computer,Portable Equipment and Battery Powe

 0.569. Size:246K  sino
sm2a06nsfp.pdf

M2 M2

SM2A06NSFP N-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/15A,RDS(ON)=140m (max.) @ VGS=10V Reliable and RuggedSDG Lead Free and Green Devices Available(RoHS Compliant)Top View of TO-220FPDApplications High Current Switching.G Uninterruptible Power Supply. Inverter Systems. Display & Lighting Equipment.SN-Channel MOSFETOrdering and Mar

 0.570. Size:258K  sino
sm2210nsqg.pdf

M2 M2

SM2210NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 12V/12A,DDRDS(ON) = 4.3m (max.) @ VGS =4.5VRDS(ON) = 5.6m (max.) @ VGS =2.5VG SPin 1DD 100% UIS + Rg TestedDFN2x2A-6_EP Reliable and Rugged Lead Free and Green Devices Available(1,2,5,6)DDDD (RoHS Compliant)Applications(3)G Battery Management Application. Power Management Fu

 0.571. Size:303K  sino
sm2602nsc.pdf

M2 M2

SM2602NSCN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6.2A,SDRDS(ON)= 24m (max.) @ VGS=4.5VDGRDS(ON)= 32m (max.) @ VGS=2.5VDD Reliable and RuggedTop View of SOT-23-6 Lead Free and Green Devices Available(RoHS Compliant)(1,2,5,6)DD DDApplications(3)G Power Management in Notebook Computer,Portable Equipment and Battery PoweredSystem

 0.572. Size:265K  sino
apm2558nu.pdf

M2 M2

APM2558NU N-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/60A,DRDS(ON)=4.5m (Typ.) @ VGS=10VSRDS(ON)=7.5m (Typ.) @ VGS=4.5VG Reliable and Rugged Avalanche RatedTop View of TO-252-3 Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrdering and Mar

 0.573. Size:259K  sino
sm2329psa.pdf

M2 M2

SM2329PSA P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-3.3A, DRDS(ON)= 85m (Max.) @ VGS=-4.5VSRDS(ON)= 120m (Max.) @ VGS=-2.5VGRDS(ON)= 210m (Max.) @ VGS=-1.8VTop View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in Notebook Computer,Portable Equipment and Battery Powe

 0.574. Size:228K  sino
sm2403psan.pdf

M2 M2

SM2403PSAN P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD -20V/-3.3A,SRDS(ON)= 90m (Max.) @ VGS=-4.5VGRDS(ON)= 135m (Max.) @ VGS=-2.5VRDS(ON)= 240m (Max.) @ VGS=-1.8VTop View of SOT-23N Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Load switch. For Portable Equipment.S For Networking application.P

 0.575. Size:260K  sino
sm2030nsu.pdf

M2 M2

SM2030NSU N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDrain 4 20V/30A, RDS(ON)= 20.5m (Max.) @ VGS=4.5V3 Source2 RDS(ON)= 29m (Max.) @ VGS=2.5V1 Gate Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252(RoHS Compliant)DApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrdering

 0.576. Size:228K  sino
sm2558nsuc.pdf

M2 M2

SM2558NSUCN-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/60A,RDS(ON)=5.2m (max.) @ VGS=10VSRDS(ON)=9.5m (max.) @ VGS=4.5VDG Reliable and Rugged Avalanche RatedTop View of TO-251 Lead Free and Green Devices Available(RoHS Compliant)DApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrdering and Mar

 0.577. Size:169K  sino
sm2a12nsu.pdf

M2 M2

SM2A12NSUN-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/25A,D RDS(ON)= 70m(max.) @ VGS= 10VS 100% UIS + Rg TestedG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-2 (RoHS Compliant)DGApplications Power Management in TV Converter.S DC-DC Converter.N-Channel MOSFETOrdering and Marking InformationPackage C

 0.578. Size:650K  sino
apm2317a.pdf

M2 M2

APM2317A P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-4.5A ,DRDS(ON)=28m (typ.) @ VGS=-4.5VSRDS(ON)=38m (typ.) @ VGS=-2.5VG RDS(ON)=55m (typ.) @ VGS=-1.8VTop View of SOT-23-3 Super High Dense Cell Design Reliable and RuggedS Lead Free and Green Devices Available(RoHS Compliant)Applications G Power Management in Notebook Com

 0.579. Size:184K  sino
sm2201nsqg.pdf

M2 M2

SM2201NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 30V/10.2A,DDRDS(ON) = 10.5m(max.) @ VGS =10VRDS(ON) = 14m(max.) @ VGS =4.5VGSDPin 1D Reliable and RuggedDFN2x2-6 Lead Free and Green Devices Available (RoHS Compliant)(1,2,5,6)DD DD 100% UIS TestedApplications(3)G Power Management in Notebook Computer,(4)SPortable

 0.580. Size:168K  sino
sm2a16nsf sm2a16nsfp.pdf

M2 M2

SM2A16NSF/SM2A16NSFP N-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/15A,RDS(ON)=156m (max.) @ VGS=10V Reliable and RuggedS S Lead Free and Green Devices AvailableD DG G(RoHS Compliant)Top View of TO-220FPTop View of TO-220 100% UIS + Rg TestedDApplications Power Management in TV Inverter.GSN-Channel MOSFETOrdering and Marking Infor

 0.581. Size:258K  sino
sm2321psa.pdf

M2 M2

SM2321PSA P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-4.3A , DRDS(ON)= 56m (Max.) @ VGS=-10VSRDS(ON)= 68m (Max.) @ VGS=-4.5VG RDS(ON)= 94m (Max.) @ VGS=-2.5VTop View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in Notebook Computer,Portable Equipment and Battery Powe

 0.582. Size:181K  sino
sm2204nsqg.pdf

M2 M2

SM2204NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 30V/7A,DDRDS(ON) = 23m(max.) @ VGS =10VRDS(ON) = 31.5m(max.) @ VGS =4.5VGSD Pin 1D Avalanche RatedDFN2x2-6 Reliable and Rugged Lead Free and Green Devices Available(1,2,5,6)DDDD(RoHS Compliant) 100% UIS TestedApplications(3)G Load Switch HDD (4)S DC/DC ConverterN

 0.583. Size:160K  sino
sm2610nsc.pdf

M2 M2

SM2610NSCN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/6.6A,SDRDS(ON)= 21m(max.) @ VGS=10VDGRDS(ON)= 27m(max.) @ VGS=4.5VDD Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-6(RoHS Compliant)(1,2,5,6)DD DDApplications Power Management in Notebook Computer,(3)GPortable Equipment and Battery PoweredSys

 0.584. Size:161K  sino
sm2612nsc.pdf

M2 M2

SM2612NSCN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/5.5A,SDRDS(ON)= 26.5m(max.) @ VGS=10VDGRDS(ON)= 35m(max.) @ VGS=4.5VDD Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-6(RoHS Compliant)(1,2,5,6)DDDDApplications Power Management in Notebook Computer,(3)GPortable Equipment and Battery PoweredSy

 0.585. Size:257K  sino
sm2302nsa.pdf

M2 M2

SM2302NSAN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A,DRDS(ON)= 26m (max.) @ VGS=4.5VSRDS(ON)= 37m (max.) @ VGS=2.5VG ESD Protected Reliable and RuggedTop View of SOT-23-3 Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in Notebook Computer,Portable Equipment and Battery PoweredSSystems.N-Chan

 0.586. Size:162K  sino
sm2601psc.pdf

M2 M2

SM2601PSC P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-7.3A ,SDRDS(ON)=26m (Max.) @ VGS=-4.5VDGDRDS(ON)=38m (Max.) @ VGS=-2.5VDRDS(ON)=58m (Max.) @ VGS=-1.8VTop View of SOT-23-6 Reliable and Rugged Lead Free and Green Devices Available(1,2,5,6)(RoHS Compliant)DD DDApplications(3)G Power Management in Notebook Computer,

 0.587. Size:284K  sino
sm2225nsqg.pdf

M2 M2

SM2225NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 100V/2.7A,DD RDS(ON)= 156m (max.) @ VGS=10V RDS(ON)= 176m (max.) @ VGS=4.5VGSDPin 1D ESD ProtectionDFN2x2A-6_EP 100% UIS + Rg Tested Reliable and Rugged(1,2,5,6)DDDD Lead Free and Green Devices Available(RoHS Compliant)Applications(3)G For POE Power Primary Side Switch for

 0.588. Size:263K  sino
sm2a06nsu.pdf

M2 M2

SM2A06NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/18A,DRDS(ON)=140m (max.) @ VGS=10VS Reliable and RuggedG Lead Free and Green Devices Available(RoHS Compliant)Top View of TO-252DApplications High Current Switching.G Uninterruptible Power Supply. Inverter Systems. Display & Lighting Equipment.SN-Channel MOSFETOrdering and Markin

 0.589. Size:305K  sino
apm2605c.pdf

M2 M2

APM2605CP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-4.5A,SRDS(ON)=43m (typ.) @ VGS=-10V DDGRDS(ON)=60m (typ.) @ VGS=-4.5VDD Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-6(RoHS Compliant)(4)SApplications(3)G Power Management in Notebook Computer,Portable Equipment and Battery PoweredSystems.D D D

 0.590. Size:159K  sino
sm2604nsc.pdf

M2 M2

SM2604NSCN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/7.4A,SRDS(ON)= 24m(max.) @ VGS=10VDDGRDS(ON)= 32.5m(max.) @ VGS=4.5VDD Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-6(RoHS Compliant)(1,2,5,6)DD DDApplications Power Management in Notebook Computer,(3)GPortable Equipment and Battery PoweredS

 0.591. Size:254K  sino
sm2328nsan.pdf

M2 M2

SM2328NSANN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/4A,DRDS(ON)= 40m (max.) @ VGS= 4.5VSRDS(ON)= 55m (max.) @ VGS= 2.5VGRDS(ON)= 85m (max.) @ VGS= 1.8VTop View of Narrow SOT-23 Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in DC/AC Inverter Systems.SN-Channel MOSFETOrdering

 0.592. Size:269K  sino
sm2a04nsv.pdf

M2 M2

SM2A04NSV N-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/1.9A, RDS(ON)= 400m (max.) @ VGS= 10VG Reliable and Rugged DS Lead Free and Green Devices AvailableTop View SOT-223 (RoHS Compliant)DApplications Power Management in TV Inverter.GSN-Channel MOSFETOrdering and Marking InformationPackage CodeSM2A04NS V : SOT-223Assembly MaterialO

 0.593. Size:166K  sino
apm2324aa.pdf

M2 M2

APM2324AAN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/3A,DRDS(ON)= 50m(Typ.) @ VGS= 4.5VSRDS(ON)= 65m(Typ.) @ VGS= 2.5VGRDS(ON)= 120m(Typ.) @ VGS= 1.8V Reliable and Rugged Top View of SOT-23 Lead Free and Green Devices Available(RoHS Compliant)DGApplications Power Management in Notebook Computer,Portable Equipment and Ba

 0.594. Size:314K  sino
sm2501nsu.pdf

M2 M2

SM2501NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/60A,Drain 4 RDS(ON)= 5m (Max.) @ VGS=10V3Source2 RDS(ON)= 6m (Max.) @ VGS=4.5V1Gate RDS(ON)= 7.5m (Max.) @ VGS=2.5V Reliable and RuggedTop View of TO-252-3 Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Motor Controls. High Frequency Isolated DC-DC Con

 0.595. Size:519K  sino
apm2055nu.pdf

M2 M2

APM2055NU N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/10A,D RDS(ON)=55m (Typ.) @ VGS=10VS RDS(ON)=75m (Typ.) @ VGS=4.5VG RDS(ON)=140m (Typ.) @ VGS=2.5V Super High Dense Cell DesignTop View of TO-252 Reliable and Rugged Lead Free and Green Devices AvailableD (RoHS Compliant)ApplicationsG Power Management in Desktop Computer o

 0.596. Size:292K  sino
sm2222csqg.pdf

M2 M2

SM2222CSQG Dual Enhancement Mode MOSFET (N- and P-Channel)Features Pin Description N-Channel 20V/4.5A,S2G2D1D1 RDS(ON)= 32m (max.) @ VGS=4.5VD2 RDS(ON)= 48.6m (max.) @ VGS=2.5VD2 RDS(ON)= 85m (max.) @ VGS=1.8VG1Pin 1S1 P-ChannelDFN2x2C-6_EP2 -20V/-2.7A, RDS(ON)= 85m (max.) @ VGS=-4.5VRDS(ON)= 127m (max.) @ VGS=-2.5V(3)D2(6)D1RDS(ON)= 230m (max.)

 0.597. Size:181K  sino
sm2213psqg.pdf

M2 M2

SM2213PSQGP-Channel Enhancement Mode MOSFETFeatures Pin Description -8V/-9.4A,SDDRDS(ON) = 19m(max.) @ VGS =-4.5V DRDS(ON) = 24m(max.) @ VGS =-2.5VGSRDS(ON) = 33m(max.) @ VGS =-1.8V Pin 1DDRDS(ON) = 45m(max.) @ VGS =-1.5VDFN2x2-6RDS(ON) = 90m(max.) @ VGS =-1.2V Reliable and Rugged (1,2,5,6)DD DD Lead Free and Green Devices Available(RoH

 0.598. Size:257K  sino
sm2314nsa.pdf

M2 M2

SM2314NSAN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/4.5A ,DRDS(ON)=45m (max.) @ VGS=4.5VRDS(ON)=60m (max.) @ VGS=2.5VSRDS(ON)=85m (max.) @ VGS=1.8VG Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23-3(RoHS Compliant)D ESD ProtectionApplicationsG Power Management in Notebook Computer,Portable Equipment and Batt

 0.599. Size:241K  sino
sm2370nsa.pdf

M2 M2

SM2370NSAN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 100V/2A, RDS(ON)= 156m (max.) @ VGS=10VS RDS(ON)= 176m (max.) @ VGS=4.5VG ESD ProtectionTop View of SOT-23 100% UIS + Rg Tested Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in TV Inveter.SN-Channel MOSFETOrdering and Markin

 0.600. Size:249K  sino
sm2054nsd.pdf

M2 M2

SM2054NSDN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/7.5A, RDS(ON)= 21m (max.) @ VGS= 10VSD RDS(ON)= 23m (max.) @ VGS= 4.5VG RDS(ON)= 36m (max.) @ VGS= 2.5V Reliable and RuggedTop View SOT-89 ESD Protection Lead Free and Green Devices AvailableD (2) (RoHS Compliant)G (1)Applications Switching RegulatorsS (3) Switching ConvertersN-Chann

 0.601. Size:291K  sino
sm2a12nskp.pdf

M2 M2

SM2A12NSKPN-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/23A,DDDD RDS(ON)= 70m (max.) @ VGS= 10V Reliable and RuggedG Lead Free and Green Devices AvailableS Pin 1SS (RoHS Compliant)DFN5x6-8( 5,6,7,8 )D D DD(4)ApplicationsG Power Management in TV Converter. DC-DC Converter.S S S(1, 2, 3)N-Channel MOSFETOrdering and Marking

 0.602. Size:162K  sino
sm2617psc sm2621psc.pdf

M2 M2

SM2621PSC P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionS -30V/-5.1A ,DDGRDS(ON)= 54m (Max.) @ VGS=-10VDRDS(ON)= 65m (Max.) @ VGS=-4.5VD RDS(ON)= 92m (Max.) @ VGS=-2.5VTop View of SOT-23-6 Reliable and Rugged Lead Free and Green Devices Available(1,2,5,6)(RoHS Compliant)DD DDApplications(3)G Power Management in Notebook Comput

 0.603. Size:156K  sino
sm2a08nsf.pdf

M2 M2

SM2A08NSF N-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/10A,RDS(ON)=205m (max.) @ VGS=10V 100% UIS + Rg TestedSD Reliable and RuggedG Lead Free and Green Devices AvailableTop View of TO-220(RoHS Compliant)DApplicationsG High Frequency DC-DC Converters. Plasma Display Panel. Power Management in TV Converter.SN-Channel MOSFET

 0.604. Size:258K  sino
sm2416nsan.pdf

M2 M2

SM2416NSAN N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 30V/0.83A , RDS(ON)=700m (max.) @ VGS=4.5VSRDS(ON)=1000m (max.) @ VGS=2.5VGRDS(ON)=1600m (max.) @ VGS=1.8V Reliable and RuggedTop View of SOT-23N Lead Free and Green Devices AvailableD(RoHS Compliant) ESD ProtectionGApplications High Speed and Analog Switching Applications.S Low volta

 0.605. Size:165K  sino
sm2404nsan.pdf

M2 M2

SM2404NSAN N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 30V/5.1A, RDS(ON)=26.5m(max.) @ VGS=10V S RDS(ON)=36.5m(max.) @ VGS=4.5VG Reliable and RuggedTop View of SOT-23N Lead Free and Green Devices Available(RoHS Compliant)DApplicationsG Power Magangement in Notebook Computer,Portable Equipment and Battery Powered Systems.S Load Swit

 0.606. Size:247K  sino
sm2a12nsf.pdf

M2 M2

SM2A12NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/25A, RDS(ON)= 70m (max.) @ VGS= 10V Reliable and RuggedS Lead Free and Green Devices AvailableDG (RoHS Compliant)Top View of TO-220DGApplications High Frequency DC-DC converters.S Plasma Display Panel. Power Management in TV Converter.N-Channel MOSFETOrdering and Marking Informati

 0.607. Size:161K  sino
sm2660nsc.pdf

M2 M2

SM2660NSCN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/5A,SDRDS(ON)= 48m(max.) @ VGS=10VDGRDS(ON)= 59m(max.) @ VGS=4.5VDD Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-6(RoHS Compliant)(1,2,5,6)DDDDApplications(3)G High frequency DC-DC converters.(4)SN-Channel MOSFETOrdering and Marking Informa

 0.608. Size:258K  sino
sm2013pskp.pdf

M2 M2

SM2013PSKP P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-100Aa,DDRDS(ON) = 3.0m (max.) @ VGS =-10V DDRDS(ON) = 3.9m (max.) @ VGS =-4.5VRDS(ON) = 5.7m (max.) @ VGS =-2.5VGPin 1SS 100% UIS + Rg TestedSDFN5x6A-8_EP Reliable and Rugged Lead Free and Green Devices Available( 5,6,7,8 )(RoHS Compliant)DDDDApplications(4) Portable Equi

 0.609. Size:169K  sino
apm2301ca.pdf

M2 M2

APM2301CA P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-3ADRDS(ON)= 70m (max.) @ VGS= -4.5VSRDS(ON)= 115m (max.) @ VGS= -2.5VGRDS(ON)= 250m (max.) @ VGS= -1.8V Reliable and RuggedTop View of SOT-23 Lead Free and Green Devices Available( RoHS Compliant)DGApplications Power Management in Notebook Computer,Portable Equipment and

 0.610. Size:160K  sino
sm2608nsc.pdf

M2 M2

SM2608NSCN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/7.4A,SDRDS(ON)= 17m(max.) @ VGS=10VDGRDS(ON)= 21.5m(max.) @ VGS=4.5VDD Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-6(RoHS Compliant)(1,2,5,6)DD DDApplications Power Management in Notebook Computer,(3)GPortable Equipment and Battery PoweredS

 0.611. Size:259K  sino
sm2300nsa.pdf

M2 M2

SM2300NSAN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A ,DRDS(ON)=25m (max.) @ VGS=10VRDS(ON)=30m (max.) @ VGS=4.5VSRDS(ON)=40m (max.) @ VGS=2.5VGRDS(ON)=60m (max.) @ VGS=1.8V Reliable and Rugged Top View of SOT-23-3 Lead Free and Green Devices AvailableD(RoHS Compliant) ESD ProtectionGApplications Power Management in Notebook Computer

 0.612. Size:255K  sino
sm2290nsqg.pdf

M2 M2

SM2290NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 150V/1.6A,DDRDS(ON) = 360m (max.) @ VGS =10VG S ESD ProtectionPin 1DD 100% UIS TestedDFN2x2A-6_EP Reliable and Rugged(1,2,5,6) Lead Free and Green Devices AvailableDDDD (RoHS Compliant)Applications(3)G For POE Power Primary Side Switch for(4)SLow. Power DC/DC Converters.

 0.613. Size:181K  sino
sm2215psqg.pdf

M2 M2

SM2215PSQGP-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD -20V/-9.4A,DDRDS(ON) = 19m(max.) @ VGS =-4.5VRDS(ON) = 27m(max.) @ VGS =-2.5VGSPin 1DDRDS(ON) = 45m(max.) @ VGS =-1.8V Super High Dense Cell DesignDFN2x2-6 Reliable and Rugged(1,2,5,6)DD DD Lead Free and Green Devices Available(RoHS Compliant)Applications(3)G Powe

 0.614. Size:200K  sino
sm2620csc.pdf

M2 M2

SM2620CSC Dual Enhancement Mode MOSFET (N- and P-Channel)Features Pin Description N-Channel 30V/4.9A, D2S1 RDS(ON)=39m(max.) @ VGS=10VD1G2S2 RDS(ON)=68m(max.) @ VGS=4.5VG1 P-ChannelTop View of SOT-23-6 -30V/-3A,RDS(ON)=100m(max.) @ VGS=-10V(4)D2(6)D1RDS(ON)=170m(max.) @ VGS=-4.5V Reliable and Rugged Lead Free and Green Devices Availabl

 0.615. Size:257K  sino
sm2333psa.pdf

M2 M2

SM2333PSAP-Channel Enhancement Mode MOSFETFeatures Pin Description -12V/-6.3A,DRDS(ON) = 26m (max.) @ VGS =-4.5VSRDS(ON) = 33m (max.) @ VGS =-2.5VGRDS(ON) = 40m (max.) @ VGS =-1.8VRDS(ON) = 60m (max.) @ VGS =-1.5VTop View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in Notebook Comput

 0.616. Size:257K  sino
sm2335psa.pdf

M2 M2

SM2335PSAP-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-7.1A,DRDS(ON) = 22m (max.) @ VGS =-4.5VRDS(ON) = 30m (max.) @ VGS =-2.5VSRDS(ON) = 45m (max.) @ VGS =-1.8VG Reliable and RuggedTop View of SOT-23-3 Lead Free and Green Devices Available(RoHS Compliant) HBM ESD protection level pass 2KV DNote : The diode connected between the gate andsour

 0.617. Size:187K  sino
sm2202nsqg.pdf

M2 M2

SM2202NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 30V/8.4A,DDRDS(ON) = 15.5m(max.) @ VGS =10VRDS(ON) = 21m(max.) @ VGS =4.5VGSD Pin 1D Avalanche RatedDFN2x2-6 Reliable and Rugged Lead Free and Green Devices Available(1,2,5,6)DD DD(RoHS Compliant) 100% UIS TestedApplications(3)G Power Management in Notebook Computer,

 0.618. Size:170K  sino
sm2006nsk.pdf

M2 M2

SM2006NSKN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 20V/10A,DDRDS(ON) = 18m (max.) @ VGS = 4.5VRDS(ON) = 27m (max.) @ VGS = 2.5VSS 100% UIS TestedSG Reliable and RuggedTop View of SOP-8 Lead Free Available (RoHS Compliant)( 5,6,7,8 )D D D DApplications(4)G Power Management in Desktop Computer or DC/DC Converters.S S

 0.619. Size:256K  sino
sm2303psa.pdf

M2 M2

SM2303PSAP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-4A,DRDS(ON) = 56m (max.) @ VGS =-10VSRDS(ON) = 88m (max.) @ VGS =-4.5VG Reliable and RuggedTop View of SOT-23-3 Lead Free and Green Devices Available(RoHS Compliant)DApplicationsG Power Management in Notebook Computer,Portable Equipment and Battery PoweredSSystems.P-Channel MOSFE

 0.620. Size:237K  sino
sm2f07nsu.pdf

M2 M2

SM2F07NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 250V/5.2A,DRDS(ON)= 690m (Max.) @ VGS=10VS 100% UIS + Rg TestedG Reliable and RuggedTop View of TO-252-2 Lead Free and Green Devices Available(RoHS Compliant)DApplicationsG Power Management in TV Inverter.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM2F07NS U : TO

 0.621. Size:160K  sino
sm2630dsc.pdf

M2 M2

SM2630DSC Dual N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/4A,D2S1 RDS(ON)=39m(max.) @ VGS=10VD1G2 RDS(ON)=68m(max.) @ VGS=4.5VS2G1 Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-6(RoHS Compliant)(6)D1 (4)D2(1)(3)ApplicationsG1G2 Power Management in Notebook Computer,Portable Equipment and Ba

 0.622. Size:267K  sino
sm2054nsv.pdf

M2 M2

SM2054NSVN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/7.5A, RDS(ON)= 23.5m (max.) @ VGS= 10VG RDS(ON)= 27m (max.) @ VGS= 4.5VDS RDS(ON)= 42m (max.) @ VGS= 2.5V Reliable and RuggedTop View SOT-223 ESD Protection Lead Free and Green Devices AvailableD (2) (RoHS Compliant)G (1)Applications Switching RegulatorsS (3) Switching ConvertersN-Ch

 0.623. Size:167K  sino
sm2670nsc.pdf

M2 M2

SM2670NSCN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/2.6A,SD RDS(ON)= 156m(max.) @ VGS=10VDG RDS(ON)= 176m(max.) @ VGS=4.5VDD ESD Protection 100% UIS TestedTop View of SOT-23-6 Reliable and Rugged(1,2,5,6) Lead Free and Green Devices AvailableDDDD(RoHS Compliant)Applications(3)G Power Management in DC/DC Converter.(4)S

 0.624. Size:199K  sino
sm2700csc.pdf

M2 M2

SM2700CSC Dual Enhancement Mode MOSFET (N- and P-Channel)FeaturesPin Description N-Channel 20V/2A,D2RDS(ON)= 125m(typ.) @ VGS= 4.5VS1D1G2RDS(ON)= 175m(typ.) @ VGS= 2.5VS2G1RDS(ON)= 280m(typ.) @ VGS= 1.8V P-Channel Top View of SOT-23-6-20V/-1.4A,RDS(ON)= 255m(typ.) @ VGS= -4.5V(4)D2(6)D1RDS(ON)= 400m(typ.) @ VGS= -2.5VRDS(ON)= 600m

 0.625. Size:302K  sino
sm2a11nsf.pdf

M2 M2

SM2A11NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/58A, RDS(ON)= 26.5m (max.) @ VGS= 10V 100% UIS + Rg TestedS Reliable and RuggedDG Lead Free and Green Devices AvailableTop View of TO-220 (RoHS Compliant)DApplicationsG Synchronous Rectification. Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Marking Informatio

 0.626. Size:257K  sino
sm2323psa.pdf

M2 M2

SM2323PSAP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-2.9A,D RDS(ON) = 108m (max.) @ VGS =-10VS RDS(ON) = 182m (max.) @ VGS =-4.5VG Reliable and RuggedTop View of SOT-23-3 Lead Free and Green Devices Available (RoHS Compliant) ESD ProtectionDNote : The diode connected between the gate andsource serves only as protection against ESD. Nogat

 0.627. Size:257K  sino
sm2312nsa.pdf

M2 M2

SM2312NSA N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/3A,D RDS(ON)=72m (max.) @ VGS=10VS RDS(ON)=100m (max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-3(RoHS Compliant)DApplicationsG DC-DC Conversion. Load Switch for PC fields.S Load Switch for Portables.N-Channel MOSFETOrdering and Marki

 0.628. Size:186K  sino
sm2203nsqg.pdf

M2 M2

SM2203NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 30V/7.4A,DDRDS(ON) = 20.5m(max.) @ VGS =10VRDS(ON) = 28.5m(max.) @ VGS =4.5VGSPin 1DD Reliable and RuggedDFN2x2-6 Lead Free and Green Devices Available (RoHS Compliant)(1,2,5,6)DD DD 100% UIS TestedApplications(3)G Power Management in Notebook Computer,(4)SPortable

 0.629. Size:161K  sino
sm2430nsan.pdf

M2 M2

SM2430NSAN N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 30V/1.49A , RDS(ON)= 390m(max.) @ VGS=4.5VS RDS(ON)= 420m(max.) @ VGS=4VG RDS(ON)= 820m(max.) @ VGS=2.5V Reliable and RuggedTop View of SOT-23N Lead Free and Green Devices AvailableD(RoHS Compliant) ESD Protection : HBM>3KV, MM>200VRGApplications G High Speed and Analog Switch

 0.630. Size:162K  sino
sm2300nsan.pdf

M2 M2

SM2300NSANN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/4A,DRDS(ON)= 40m(max.) @ VGS= 4.5VSRDS(ON)= 55m(max.) @ VGS= 2.5VGRDS(ON)= 85m(max.) @ VGS= 1.8VTop View of SOT-23N Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in DC/AC Inverter Systems.SN-Channel MOSFET

 0.631. Size:261K  sino
sm2360nsa.pdf

M2 M2

SM2360NSA N-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/2.7A ,DRDS(ON)=104m (max.) @ VGS=10VS RDS(ON)=130m (max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-3(RoHS Compliant)DApplicationsG Power Management in DC/AC Inverer Systems.SN-Channel MOSFETOrdering and Marking InformationSM2360NS Packa

 0.632. Size:256K  sino
sm2011pskp.pdf

M2 M2

SM2011PSKP P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-100Aa,DDRDS(ON) = 2.0m (max.) @ VGS =-10V DDRDS(ON) = 2.5m (max.) @ VGS =-4.5VRDS(ON) = 3.6m (max.) @ VGS =-2.5VGPin 1SS 100% UIS + Rg TestedSDFN5x6A-8_EP ESD Protection Reliable and Rugged( 5,6,7,8 ) Lead Free and Green Devices Available DDDD(RoHS Compliant)(4)Applications

 0.633. Size:261K  sino
sm2a04nsu.pdf

M2 M2

SM2A04NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/8A,Drain 4RDS(ON)= 400m (Max.) @ VGS= 10V3Source2 Reliable and Rugged1Gate Lead Free and Green Devices Available(RoHS Compliant)Top View of TO-252-3DApplicationsG Power Management in TV Inverter.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM2A04NS U : TO-

 0.634. Size:286K  sino
sm2014nskp.pdf

M2 M2

SM2014NSKPN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/13.8A,DDDDRDS(ON)= 19.5m (max.) @ VGS=4.5VRDS(ON)= 27m (max.) @ VGS=2.5VGPin 1 Reliable and RuggedSSS Lead Free and Green Devices AvailableDFN5x6-8(RoHS Compliant) ESD Protection.D (5, 6)ApplicationsG (4) Power Management in Notebook Computer,Portable Equipment and Battery

 0.635. Size:183K  sino
sm2223psqg.pdf

M2 M2

SM2223PSQG P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD -12V/-11A,DDRDS(ON) = 13.8m(max.) @ VGS =-4.5VRDS(ON) = 19m(max.) @ VGS =-2.5V SGPin 1DDRDS(ON) = 26m(max.) @ VGS =-1.8VRDS(ON) = 36m(max.) @ VGS =-1.5VDFN2x2-6 Reliable and Rugged(1,2,5,6)DD DD Lead Free and Green Devices Available(RoHS Compliant)Applications(3)G

 0.636. Size:257K  sino
sm2310nsa.pdf

M2 M2

SM2310NSA N-Channel Enhancement Mode MOSFETFeatures Pin Description 55V/2.1A ,D RDS(ON)=130m (max.) @ VGS=4.5VS RDS(ON)=180m (max.) @ VGS=2.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-3(RoHS Compliant)DApplicationsG Power Management in DC/AC Inverer Systems.SN-Channel MOSFETOrdering and Marking InformationSM2310NS Pac

 0.637. Size:235K  sino
sm2a06nsf.pdf

M2 M2

SM2A06NSF N-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/18A,RDS(ON)=140m (max.) @ VGS=10V Reliable and RuggedSD Lead Free and Green Devices AvailableG(RoHS Compliant)Top View of TO-220DApplicationsG Power Management in TV Inverter.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM2A06NS F : TO-220Assembly MaterialOper

 0.638. Size:152K  sino
sm2558nub.pdf

M2 M2

SM2558NUBN-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/60A,RDS(ON)=4.5m (Typ.) @ VGS=10VRDS(ON)=7.5m (Typ.) @ VGS=4.5VSD Reliable and RuggedG Avalanche Rated Lead Free and Green Devices AvailableTop View of TO-251(RoHS Compliant)D 100% UIS + Rg TestedApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-C

 0.639. Size:166K  sino
sm2304nsa.pdf

M2 M2

SM2304NSA N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/5.1A,D RDS(ON)=25m(max.) @ VGS=10VS RDS(ON)=35m(max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-3(RoHS Compliant)D 100% UIS + Rg TestedApplicationsG Power Magangement in Notebook Computer,Portable Equipment and Battery Powered Sys

 0.640. Size:182K  sino
sm2260nsqg.pdf

M2 M2

SM2260NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 60V/5.2A,DDRDS(ON) = 48m(max.) @ VGS =10VRDS(ON) = 59m(max.) @ VGS =4.5V SGPin 1DD Reliable and RuggedDFN2x2-6 Lead Free and Green Devices Available (RoHS Compliant)(1,2,5,6)DDDD 100% UIS TestedApplications(3)G High frequency DC-DC converters.(4)SN-Channel MOSFETOr

 0.641. Size:262K  sino
sm2a02nsu.pdf

M2 M2

SM2A02NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/16A,DRDS(ON)=90m (Max.) @ VGS=10VS Reliable and RuggedG Lead Free and Green Devices Available(RoHS Compliant) Top View of TO-252-3DApplicationsG Power Management in TV Converter. DC-DC Converter.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM2A02NS U : TO-252-3

 0.642. Size:180K  sino
sm2205psqg.pdf

M2 M2

SM2205PSQGP-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD -20V/-6.5A,DDRDS(ON) = 39m(max.) @ VGS =-4.5VRDS(ON) = 56m(max.) @ VGS =-2.5VGSPin 1DD Reliable and RuggedDFN2x2-6 Lead Free and Green Devices Available(RoHS Compliant)(1,2,5,6)DD DDApplications(3)G Power Management in Notebook Computer,(4)SPortable Equipment and Bat

 0.643. Size:498K  sino
apm2303a.pdf

M2 M2

APM2303AP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-4A, D RDS(ON)=55m (max.) @ VGS=-10VS RDS(ON)=70m (max.) @ VGS=-4.5VG RDS(ON)=115m (max.) @ VGS=-2.5VTop View of SOT-23-3 Super High Dense Cell DesignD Reliable and Rugged Enhance ESD Cell Protection Lead Free and Green Devices Available(RoHS Compliant)GApplications P

 0.644. Size:149K  sino
sm2a08nsfp.pdf

M2 M2

SM2A08NSFP N-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/9A,RDS(ON)=205m (max.) @ VGS=10V 100% UIS + Rg TestedSD Reliable and Rugged G Lead Free and Green Devices AvailableTop View of TO-220FP(RoHS Compliant)DApplicationsG High Frequency DC-DC Converters. Plasma Display Panel. Power Management in TV Converter.SN-Channel MOSFET

 0.645. Size:259K  sino
sm2206nsqg.pdf

M2 M2

SM2206NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 20V/9A,DDRDS(ON) = 10.9m (max.) @ VGS =4.5VRDS(ON) = 15.5m (max.) @ VGS =2.5V SGPin 1DDRDS(ON) = 26m (max.) @ VGS =1.8V 100% UIS + Rg TestedDFN2x2A-6_EP Reliable and Rugged(1,2,5,6)DDDD Lead Free and Green Devices Available (RoHS Compliant)Applications(3)G Li-lon Battery Pac

 0.646. Size:259K  sino
sm2307psa.pdf

M2 M2

SM2307PSA P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-6A , DRDS(ON)=29m (Max.) @ VGS=-4.5VSRDS(ON)=40m (Max.) @ VGS=-2.5VGRDS(ON)=60m (Max.) @ VGS=-1.8VTop View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices Available(RoHS Compliant)DApplicationsG Power Management in Notebook Computer,Portable Equipment and Battery Powered

 0.647. Size:256K  sino
sm2211psqg.pdf

M2 M2

SM2211PSQGP-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD -30V/-7.9A,DDRDS(ON) = 27m (max.) @ VGS =-10VRDS(ON) = 42m (max.) @ VGS =-4.5VGSPin 1DD 100% UIS + Rg TestedDFN2x2A-6_EP Reliable and Rugged Lead Free and Green Devices Available(1,2,5,6)DD DD(RoHS Compliant)Applications(3)G Power Management in Notebook Computer,(4)SPort

 0.648. Size:228K  sino
sm2691psc.pdf

M2 M2

SM2691PSC P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionS -150V/-1.1A ,DDGRDS(ON)= 750m (Max.) @ VGS=-10VDD 100% UIS + Rg Tested Reliable and RuggedTop View of SOT-23-6 Lead Free and Green Devices Available(RoHS Compliant)(1,2,5,6)DDDDApplications(3)G Load switch for Networking application.(4)SP-Channel MOSFETOrdering and Marking Info

 0.649. Size:305K  sino
apm2306a.pdf

M2 M2

APM2306AN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/3.5A ,D RDS(ON)= 65m (max.) @ VGS=10VS RDS(ON)= 90m (max.) @ VGS=5VG Super High Dense Cell Design Reliable and RuggedTop View of SOT-23-3 Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in Notebook Computer,Portable Equipment and Battery PoweredSys

 0.650. Size:287K  sino
sm2001csk.pdf

M2 M2

SM2001CSK Dual Enhancement Mode MOSFET (N- and P-Channel)Features Pin DescriptionD1 N-ChannelD1D2 20V/9.5A, D2 RDS(ON) =14m (max.) @ VGS = 4.5V RDS(ON) =18m (max.) @ VGS = 2.5VS1G1S2 P-ChannelG2 -20V/-6A,Top View of SOP 8 RDS(ON) =45m (max.) @ VGS =-4.5V RDS(ON) =65m (max.) @ VGS =-2.5V(8) (7) (6) (5)D1 D1 D2 D2 100% UIS + Rg Tested Reliable and Rug

 0.651. Size:166K  sino
sm2305psa.pdf

M2 M2

SM2305PSA P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-4.9A , DRDS(ON)=43m (Max.) @ VGS=-4.5VSRDS(ON)=58m (Max.) @ VGS=-2.5VGRDS(ON)=88m (Max.) @ VGS=-1.8VTop View of SOT-23 100% UIS + Rg Tested Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in Notebook Computer,Po

 0.652. Size:257K  sino
sm2318nsa.pdf

M2 M2

SM2318NSA N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/4.8A,D RDS(ON)=40m (max.) @ VGS=10VS RDS(ON)=48m (max.) @ VGS=4.5VG RDS(ON)=85m (max.) @ VGS=2.5V Reliable and RuggedTop View of SOT-23-3 Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in Notebook Computer,Portable Equipment and Battery Powered Sy

 0.653. Size:230K  sino
sm2316nsa.pdf

M2 M2

SM2316NSAN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 30V/6.2A, RDS(ON)= 23.5m (max.) @ VGS=10VS RDS(ON)= 26m (max.) @ VGS=4.5VG RDS(ON)= 34m (max.) @ VGS=2.5V ESD Protection Top View of TSOT-23 100% UIS + Rg Tested Reliable and RuggedD Lead Free and Green Devices Available(RoHS Compliant)GApplications Load Switch. DC-DC converter.S Po

 0.654. Size:230K  sino
sm2363psa.pdf

M2 M2

SM2363PSAP-Channel Enhancement Mode MOSFETFeatures Pin Description -60V/-1.8A,DRDS(ON)= 225m (max.) @ VGS=-10VRDS(ON)= 300m (max.) @ VGS=-4.5VS ESD ProtectionG 100% UIS+Rg TestedTop View of SOT-23 Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in DC/DC Converter. Load switch.SP-Channel MOSFET

 0.655. Size:202K  sino
apm2701ac.pdf

M2 M2

APM2701AC Dual Enhancement Mode MOSFET (N- and P-Channel)Features Pin Description N-Channel 20V/3A,D2S1 RDS(ON)=50m(typ.) @ VGS=4.5VD1G2RDS(ON)=65m(typ.) @ VGS=2.5VS2G1 P-Channel-20V/-2A,Top View of SOT-23-6RDS(ON)=90m(typ.) @ VGS=-4.5V(4)D2RDS(ON)=130m(typ.) @ VGS=-2.5V (6)D1 Reliable and Rugged Lead Free and Green Devices Available(

 0.656. Size:261K  sino
sm2a08nsu.pdf

M2 M2

SM2A08NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/10A,DRDS(ON)=210m (max.) @ VGS=10VS Reliable and RuggedG Lead Free and Green Devices Available(RoHS Compliant)Top View of TO-252-3DApplications High Current Switching.G Uninterruptible Power Supply. Inverter Systems. Display & Lighting Equipment.SN-Channel MOSFETOrdering and Mark

 0.657. Size:165K  sino
sm2692nsc.pdf

M2 M2

SM2692NSCN-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/1.2A,SD RDS(ON)= 700m(max.) @ VGS=10VDG ESD ProtectionDD 100% UIS + Rg Tested Reliable and RuggedTop View of SOT-23-6 Lead Free and Green Devices Available(1,2,5,6)(RoHS Compliant)DDDDApplications(3)G DC-DC converter for Networking. Load switch.(4)SN-Channel MOSFETOrd

 0.658. Size:236K  sino
sm2a27nsfp.pdf

M2 M2

SM2A27NSFP N-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/4A,RDS(ON)= 660m (Max.) @ VGS=10VRDS(ON)= 740m (Max.) @ VGS=4.5VS 100% UIS + Rg TestedDG Reliable and RuggedTop View of TO-220FP Lead Free and Green Devices Available(RoHS Compliant)D (2)ApplicationsG (1) Power Management in DC/DC Converter.S (3)N-Channel MOSFETOrdering and Mark

 0.659. Size:163K  sino
sm2425psan.pdf

M2 M2

SM2425PSANP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-3.7A,D RDS(ON) = 64m(max.) @ VGS =-10VS RDS(ON) = 96m(max.) @ VGS =-4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23N (RoHS Compliant) ESD ProtectionDNote : The diode connected between the gate andsource serves only as protection against ESD. Nog

 0.660. Size:230K  sino
apm2360a.pdf

M2 M2

APM2360A N-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/2.7A ,DRDS(ON)=104m (max.) @ VGS=10VS RDS(ON)=130m (max.) @ VGS=4.5VG 100% UIS + Rg Tested Reliable and RuggedTop View of SOT-23 Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in DC/AC Inverer Systems.SN-Channel MOSFETOrdering and Marking Informa

 0.661. Size:167K  sino
apm2300ca.pdf

M2 M2

APM2300CAN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A ,DRDS(ON)=25m (typ.) @ VGS=10VSRDS(ON)=32m (typ.) @ VGS=4.5VGRDS(ON)=40m (typ.) @ VGS=2.5VRDS(ON)=65m (typ.) @ VGS=1.8V Top View of SOT-23 Reliable and RuggedD Lead Free and Green Devices Available(RoHS Compliant)GApplications Power Management in Notebook Computer,Port

 0.662. Size:217K  sino
sm2221csqg.pdf

M2 M2

SM2221CSQG Dual Enhancement Mode MOSFET (N- and P-Channel)Features Pin Description N-Channel 12V/6.8A,S2G2D1D1 RDS(ON)= 21m(max.) @ VGS=4.5VD2 RDS(ON)= 27m(max.) @ VGS=2.5VD2 RDS(ON)= 39m(max.) @ VGS=1.8VG1Pin 1S1 RDS(ON)= 62m(max.) @ VGS=1.5VDFN2x2-6 P-Channel -12V/-4.4A, RDS(ON)= 50m(max.) @ VGS=-4.5V(3)D2(6)D1 RDS(ON)= 65

 0.663. Size:262K  sino
sm2a01nsfp.pdf

M2 M2

SM2A01NSF/SM2A01NSFP N-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/65A, RDS(ON)= 28m (max.) @ VGS= 10V Reliable and RuggedS SD DG G Lead Free and Green Devices AvailableTop View of TO-220 Top View of TO-220-FP(RoHS Compliant)DApplicationsG Synchronous Rectification. Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Markin

 0.664. Size:258K  sino
sm2208nsqg.pdf

M2 M2

SM2208NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 24V/12A,DDRDS(ON) = 5.8m (max.) @ VGS =10VRDS(ON) = 6.9m (max.) @ VGS =4.5VG SPin 1DDRDS(ON) = 10m (max.) @ VGS =2.5V 100% UIS + Rg TestedDFN2x2A-6_EP Reliable and Rugged(1,2,5,6)DDDD Lead Free and Green Devices Available (RoHS Compliant)Applications(3)G Battery Management A

 0.665. Size:160K  sino
sm2a01nsf.pdf

M2 M2

SM2A01NSF/SM2A01NSFP N-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/65A, RDS(ON)= 28m(max.) @ VGS= 10V Reliable and RuggedS SD DG G Lead Free and Green Devices AvailableTop View of TO-220 Top View of TO-220FP(RoHS Compliant) 100% UIS + Rg TestedDApplicationsG Synchronous Rectification. Power Management in Inverter Systems.SN-Ch

 0.666. Size:151K  sino
sm2518nub.pdf

M2 M2

SM2518NUBN-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/50A,RDS(ON)=8m (Typ.) @ VGS=10VRDS(ON)=15m (Typ.) @ VGS=4.5VSD Reliable and RuggedG Avalanche Rated Lead Free and Green Devices AvailableTop View of TO-251(RoHS Compliant) 100% UIS + Rg TestedDApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Channel

 0.667. Size:258K  sino
sm2309psa.pdf

M2 M2

SM2309PSAP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-3.1A,DRDS(ON) = 95m (max.) @ VGS =-10VSRDS(ON) = 150m (max.) @ VGS =-4.5VG Reliable and RuggedTop View of SOT-23-3 Lead Free and Green Devices Available(RoHS Compliant)DGApplications Power Management in Notebook Computer,Portable Equipment and Battery PoweredSSystems.P-Channel MO

 0.668. Size:262K  sino
sm2308nsa.pdf

M2 M2

SM2308NSA N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/5.2A ,D RDS(ON)= 35m (max.) @ VGS=10VS RDS(ON)= 45m (max.) @ VGS=4.5VG 100% UIS + Rg Tested Reliable and RuggedTop View of SOT-23 Lead Free and Green Devices Available(RoHS Compliant) D ESD ProtectionGApplications Load Switch. DC-DC converter.S Power Management Function.N-Channel

 0.669. Size:241K  sino
sm2004nsd.pdf

M2 M2

SM2004NSD N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/7A, RDS(ON)= 22m (max.) @ VGS= 10VSD RDS(ON)= 28m (max.) @ VGS= 4.5VG RDS(ON)= 54m (max.) @ VGS= 2.5V 100% UIS and Rg testedTop View SOT-89 ESD Protection Reliable and RuggedD (2) Lead Free and Green Devices Available (RoHS Compliant)G (1)Applications Switching Regulators.S (3) Sw

 0.670. Size:259K  sino
sm2331psa.pdf

M2 M2

SM2331PSA P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-3.9A, DRDS(ON)= 60m (Max.) @ VGS=-4.5VSRDS(ON)= 90m (Max.) @ VGS=-2.5VGRDS(ON)=150m (Max.) @ VGS=-1.8VTop View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in Notebook Computer,Portable Equipment and Battery Powere

 0.671. Size:165K  sino
sm2311psa.pdf

M2 M2

SM2311PSAP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-3.8A,DRDS(ON) = 62m(max.) @ VGS =-10VSRDS(ON) = 90m(max.) @ VGS =-4.5VG ESD ProtectionTop View of SOT-23 100% UIS + Rg Tested Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)Applications G Power Management in Notebook Computer,Portable Equipment and Ba

 0.672. Size:161K  sino
sm2605psc.pdf

M2 M2

SM2605PSCP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-7.5A,SDRDS(ON) = 30m(max.) @ VGS =-10VDGRDS(ON) = 45m(max.) @ VGS =-4.5VDD Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-6(RoHS Compliant)(1,2,5,6)DD DDApplications(3)G Power Management in Notebook Computer,Portable Equipment and Battery Powe

 0.673. Size:263K  sino
sm2613psc.pdf

M2 M2

SM2613PSC P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-5.6A ,SDRDS(ON)= 45m (Max.) @ VGS=-4.5VDGRDS(ON)= 66m (Max.) @ VGS=-2.5VDDRDS(ON)=104m (Max.) @ VGS=-1.8V 100% UIS + Rg TestedTop View of SOT-23-6 Reliable and Rugged Lead Free and Green Devices Available (1,2,5,6)DD DD(RoHS Compliant)Applications(3)G Power Management in Noteb

 0.674. Size:257K  sino
sm2313psa.pdf

M2 M2

SM2313PSA P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-3.5A, DRDS(ON)= 73m (Max.) @ VGS=-4.5VSRDS(ON)= 110m (Max.) @ VGS=-2.5VGRDS(ON)= 193m (Max.) @ VGS=-1.8VTop View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in Notebook Computer,Portable Equipment and Battery Powe

 0.675. Size:265K  sino
apm2309a.pdf

M2 M2

APM2309A P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-2.2A,DRDS(ON)= 105m (typ.) @ VGS= -10VS RDS(ON)= 165m (typ.) @ VGS= -4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-3 (RoHS Compliant)DApplicationsG Power Management in Notebook Computer,Portable Equipment and Battery PoweredSystems.SP-Channel M

 0.676. Size:257K  sino
sm2315psa.pdf

M2 M2

SM2315PSAP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-5A,DRDS(ON) = 42m (max.) @ VGS =-10VSRDS(ON) = 64m (max.) @ VGS =-4.5VG Reliable and RuggedTop View of SOT-23-3 Lead Free and Green Devices Available(RoHS Compliant)DGApplications Power Management in Notebook Computer,SPortable Equipment and Battery PoweredP-Channel MOSFETSystems

 0.677. Size:257K  sino
sm2320nsa.pdf

M2 M2

SM2320NSAN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6.3A ,DRDS(ON)=23m (max.) @ VGS=10VRDS(ON)=27m (max.) @ VGS=4.5VSRDS(ON)=40m (max.) @ VGS=2.5VGRDS(ON)=72m (max.) @ VGS=1.8V ESD Protection Top View of SOT-23-3 Reliable and RuggedD Lead Free and Green Devices Available(RoHS Compliant)GApplications Power Management in Notebook Comput

 0.678. Size:163K  sino
sm2413psan.pdf

M2 M2

SM2413PSAN P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD -20V/-3.5A,RDS(ON)= 73m (Max.) @ VGS=-4.5VSRDS(ON)= 110m (Max.) @ VGS=-2.5VGRDS(ON)= 193m (Max.) @ VGS=-1.8V Reliable and RuggedTop View of SOT-23N Lead Free and Green Devices Available(RoHS Compliant)DApplicationsG Power Management in Notebook Computer,Portable Equipment and

 0.679. Size:161K  sino
sm2609psc.pdf

M2 M2

SM2609PSCP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-4A, SDRDS(ON) = 85m(max.) @ VGS =-10VDGDRDS(ON) = 135m(max.) @ VGS =-4.5VD Reliable and RuggedTop View of SOT-23-6 Lead Free and Green Devices Available(RoHS Compliant)(1,2,5,6)DD DDApplications(3)G Power Management in Notebook Computer,Portable Equipment and Battery Powere

 0.680. Size:265K  sino
apm2518nu.pdf

M2 M2

APM2518NU N-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/50A,DRDS(ON)=8m (Typ.) @ VGS=10VSRDS(ON)=15m (Typ.) @ VGS=4.5VG Reliable and Rugged Avalanche RatedTop View of TO-252-3 Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrdering and Markin

 0.681. Size:185K  sino
sm2a18nsv.pdf

M2 M2

SM2A18NSVN-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/1.1A,RDS(ON)= 1140m(max.) @ VGS= 10VG RDS(ON)= 1300m(max.) @ VGS= 4.5VDS 100% UIS+Rg tested Reliable and RuggedTop View SOT-223 Lead Free and Green Devices AvailableD (RoHS Compliant)ApplicationsG Power Management in TV Inverter.S N-Channel MOSFETOrdering and Marking In

 0.682. Size:126K  china
csm260.pdf

M2

CSM260 N PD TC=25 250 W 2.0 W/ ID VGS=10V,TC=25 35 A ID VGS=10V,TC=100 28 A IDM 140 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.5 /W RthJA 48 /W BVDSS VGS=0V,ID=1.0mA 200 V VGS=10V,ID=28A 0.

 0.683. Size:143K  jdsemi
cm2n60.pdf

M2 M2

RCM2N60 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS

 0.684. Size:127K  jdsemi
cm2n80f.pdf

M2 M2

RC28FMN0 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 800V N-Channel VDMOS RoHS 1LDP E C21 2

 0.685. Size:126K  jdsemi
cm20n60.pdf

M2 M2

RCM20N60 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 2 3

 0.686. Size:130K  jdsemi
cm20n50f.pdf

M2 M2

RCM20N50F www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 500V N-Channel VDMOS RoHS 1 2 1 23

 0.687. Size:143K  jdsemi
cm2n60c to251.pdf

M2 M2

RCM2N60C www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS

 0.688. Size:129K  jdsemi
cm2n80c.pdf

M2 M2

RC28CMN0 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 800V N-Channel VDMOS RoHS 1LDP E C2

 0.689. Size:126K  jdsemi
cm2n65c.pdf

M2 M2

RCM2N65C www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS 1 LDPE C2 3

 0.690. Size:127K  jdsemi
cm25n06.pdf

M2 M2

RCM25N06 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 60V N-Channel Trench-MOS RoHS 1 2 3 TO-220A 4

 0.691. Size:128K  jdsemi
cm20n50.pdf

M2 M2

RCM20N50 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 500V N-Channel VDMOS RoHS 1 2 3

 0.692. Size:130K  jdsemi
cm20n60f.pdf

M2

RCM20N60F www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 2 12 3

 0.693. Size:126K  jdsemi
cm20n50pz.pdf

M2

RC2N0ZM05P www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 500V N-Channel VDMOS RoHS 121 2 33

 0.694. Size:129K  jdsemi
cm20n50p.pdf

M2 M2

RCM20N50P www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 500V N-Channel VDMOS RoHS 1 2 1 2 33

 0.695. Size:145K  jdsemi
cm2n60f.pdf

M2 M2

RCM2N60F www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS

 0.696. Size:140K  jdsemi
cm20n60p to3pb.pdf

M2 M2

RCM20N60P www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS

 0.697. Size:145K  jdsemi
cm2n65f.pdf

M2 M2

RCM2N65F www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS

 0.698. Size:122K  jdsemi
cm2n60c.pdf

M2 M2

RCM2N60C www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 2LDP E C122

 0.699. Size:125K  jdsemi
cm220n04.pdf

M2 M2

RCM220N04 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 40V N-Channel Trench-MOS RoHS 1 USP 2 3

 0.700. Size:393K  tysemi
wnm2024.pdf

M2 M2

Product specificationWNM2024 Single N-Channel, 20V, 3.9A, Power MOSFET VDS (V) Rds(on) ()0.027@ VGS=4.5V20 0.031@ VGS=2.5V0.036@ VGS=1.8VSOT-23 Descriptions D 3 The WNM2024 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trenchtechnology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in 1 2 DC

 0.701. Size:84K  tysemi
wpm2015.pdf

M2 M2

Product specificationWPM2015Single P-Channel, -20V, -2.4A, Power MOSFET VDS (V) Rds(on) ( )0.081@ VGS= 4.5V-200.103@ VGS= 2.5VSOT-23 DescriptionsDThe WPM2015 is P-Channel enhancement 3MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use in DC-DC conversion, power s

 0.702. Size:136K  tysemi
wnm2034.pdf

M2 M2

Product specificationWNM2034N-Channel, 20V, 3.6A, Power MOSFET VDS (V) Rdson ( )0.037 @ 10V200.045 @ 4.5VDescriptionsSOT-23 The WNM2034 is N-Channel enhancement MOS DField Effect Transistor. Uses advanced trench technology 3and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion and power switch application

 0.703. Size:224K  tysemi
apm2701cg.pdf

M2 M2

SMD Type MOSFETSMD Type TrMOSFETSMDTypeSMDTypeSMDType rSMDType ICSMD Type ICSMD Type oICSMD Type ansistICsProduct specificationKDS3601Features1.3 A, 100 V. RDS(ON) = 480m @VGS =10 VRDS(ON) = 530m @VGS =6VLow gate charge (3.7 nC typical)Fast switching speedHigh performance trench technology for extremely low RDS(ON)High power and current handling capabilityAbs

 0.704. Size:124K  tysemi
wnm2027.pdf

M2 M2

Product specificationWNM2027N-Channel, 20V, 3.6A, Power MOSFET Rds(on) IdV(BR)DSS(Max. m) (A) 45 @ 4.5V 3.6 20 55 @ 2.5V 3.1 66 @ 1.8V 1.5 SOT-23 DDescriptions3The WNM2027 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC

 0.705. Size:442K  tysemi
wnm2025.pdf

M2 M2

Product specificationWNM2025 Single N-Channel, 20V, 3.9 A, Power MOSFET VDS (V) Rds(on) ()0.027@ VGS=4.5V20 0.031@ VGS=2.5V0.036@ VGS=1.8VSOT-23-3L Descriptions D 3 The WNM2025 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trenchtechnology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in 1 2

 0.706. Size:167K  tysemi
wnm2020.pdf

M2 M2

Product specificationWNM2020N-Channel, 20V, 0.90A, Small Signal MOSFET VDS (V) Rds(on) ( )0.220@ VGS=4.5V20 0.260@ VGS=2.5V0.320@ VGS=1.8VSOT-23 DescriptionsThe WNM2020 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)D3with low gate charge. This device is suitable for use in DC-DC convers

 0.707. Size:388K  tysemi
wnm2023.pdf

M2 M2

Product specificationWNM2023 Single N-Channel, 20V, 3.2A, Power MOSFET VDS (V) Rds(on) ()0.038@ VGS=4.5V20 0.044@ VGS=2.5V0.052@ VGS=1.8VSOT-23-3L Descriptions D 3 The WNM2023 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trenchtechnology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC

 0.708. Size:99K  tysemi
wnm2016.pdf

M2 M2

Product specificationWNM2016N-Channel, 20V, 3.2A, Power MOSFET V(BR)DSS Rds(on) 40 @ 4.5V 20 47 @ 2.5V 55 @ 1.8V SOT-23 DDescriptions3The WNM2016 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC 21conversion and power swit

 0.709. Size:596K  tysemi
wpm2341a.pdf

M2 M2

Product specificationWPM2341AP-Channel Enhancement Mode MosfetFeatures Higher Efficiency Extending Battery Life Miniature SOT23-3 Surface Mount Package3 Super high density cell design for extremely low RDS (ON) 12Applications DC/DC Converter Load Switch SOT 23-3 Battery Powered System LCD Display inverter Power Management in Portable, Battery P

 0.710. Size:110K  tysemi
wpm2026.pdf

M2 M2

Product specificationWPM2026 Single P-Channel, -20V, -3.2A, Power MOSFET VDS (V) Rds(on) ( ) 0.056@ VGS= 4.5V -20 0.069@ VGS= 2.5V 0.086@ VGS= 1.8V SOT-23 Descriptions D 3 The WPM2026 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in

 0.711. Size:1569K  kexin
wpm2015.pdf

M2 M2

SMD Type MOSFETP-Channel MOSFETWPM2015 (KPM2015)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) =-20V ID =-2.4 A1 2+0.1+0.050.95-0.1 0.1-0.01 RDS(ON) 110m (VGS =-4.5V)+0.11.9-0.1 RDS(ON) 150m (VGS =-2.5V) Supper high density cell design1. Gate2. SourceD3. Drain31 2G S Absolute Maximum Rating

 0.712. Size:822K  kexin
utm2054.pdf

M2 M2

SMD Type MOSFETN-Channel MOSFETUTM2054 (KTM2054)1.70 0.1 Features VDS (V) = 20V ID = 5 A (VGS = 10V) RDS(ON) 40m (VGS = 10V)0.42 0.10.46 0.1 RDS(ON) 54m (VGS = 4.5V) RDS(ON) 130m (VGS = 2.5V)1.Gate Fast switching capability2.Drain3.SourceDrainGateSource Absolute Maximum Ratings Ta = 25Parameter Symbol Rat

 0.713. Size:1397K  kexin
wpm2005b.pdf

M2 M2

SMD Type MOSFETP+Schottky Hybrid MOSFETWPM2005B (KPM2005B)DFN3X2-8L Unit:mm 0.35 (max)0.05 (max)0.24 (min) Features VDS (V) =-20V ID =-2.7 A (VGS =-10V) RDS(ON) 125m (VGS =-4.5V)0.25 (max)0.08 (min) RDS(ON) 160m (VGS =-2.5V)0.65 BSC0.80 0.13.00 BSC Ultra Low VF Schottky1 8A C72A C6S D3G D45 Absolu

 0.714. Size:1282K  kexin
wnm2020.pdf

M2 M2

SMD Type MOSFETN-Channel MOSFETWNM2020 SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) = 20V ID = 0.83 A1 2 RDS(ON) 310m (VGS = 4.5V)+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1 RDS(ON) 360m (VGS = 2.5V) RDS(ON) 460m (VGS = 1.8V)1. Gate2. SourceD3. Drain31 2G S Absolute Maximum Ratings Ta = 2

 0.715. Size:551K  silan
sgm25pa12a8tfd.pdf

M2 M2

SGM25PA12A8TFD 25A/1200V IGBT SGM25PA12A8TFD 25A/1200VVCE(sat)( ) =2.1V@IC=25A VCE(sat) A8 DBC

 0.716. Size:408K  silan
sgm200hf12a3tfd.pdf

M2 M2

SGM200HF12A3TFD 200A, 1200V IGBT 0B SGM200HF12A3TFD 1B 200A1200VVCE(sat)( ) =2.2V@IC=200A VCE(sat) DBC A3

 0.717. Size:561K  silan
sgt10u60sdm2d.pdf

M2 M2

SGT10U60SDM2D 10A600V C2SGT10U60SDM2D 4 PlusField Stop IV+ 1G UPS,SMPS PFC 3E 10A600VVCE(sat)( )=1.65V@ IC=10A

 0.718. Size:330K  ruichips
ru3030m2.pdf

M2 M2

RU3030M2N-Channel Advanced Power MOSFETFeatures Pin Description 30V/30A, RDS (ON) =10m(Typ.)@VGS=10VDDD RDS (ON) =15m(Typ.)@VGS=4.5V D Super High Dense Cell Design Fast Switching Speed Low gate Charge 100% avalanche tested GSSS Lead Free and Green Devices Available (RoHS Compliant)PIN1PIN1PDFN3333DApplications Switching Applic

 0.719. Size:331K  ruichips
ru30e60m2.pdf

M2 M2

RU30E60M2N-Channel Advanced Power MOSFETFeatures Pin Description 30V/60A, RDS (ON) =3m(Typ.)@VGS=10VDDD RDS (ON) =6m(Typ.)@VGS=4.5V D Super High Dense Cell Design Ulta Low On-Resistance ESD Protected(Rating 4KV HBM) Fast Switching Speed GSSS 100% avalanche testedPIN1 Lead Free and Green Devices Available (RoHS Compliant)PIN1PDFN33

 0.720. Size:414K  ruichips
ruh4040m2.pdf

M2 M2

RUH4040M2N-Channel Advanced Power MOSFETFeatures Pin Description 40V/40A,RDS (ON) =5.5m(Typ.)@VGS=10V DDDDRDS (ON) =8m(Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche testedG Lead Free and Green Devices Available (RoHS Compliant)SSSPIN1PIN1PDFN3333DApplications DC/DC Converters On board power for

 0.721. Size:414K  ruichips
ruh3051m2.pdf

M2 M2

RUH3051M2N-Channel Advanced Power MOSFETFeatures Pin Description 30V/50A,RDS (ON) =4.2m(Typ.)@VGS=10V DDDDRDS (ON) =6m(Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche testedG Lead Free and Green Devices Available (RoHS Compliant)SSSPIN1PIN1PDFN3333DApplications DC/DC Converters On board power for

 0.722. Size:386K  ruichips
ru30d20m2.pdf

M2 M2

RU30D20M2N-Channel Advanced Power MOSFETFeatures Pin Description 30V/20A, RDS (ON) =8.5m(Typ.)@VGS=10VD2D2D1D1 RDS (ON) =11.5m(Typ.)@VGS=4.5V Super High Dense Cell Design Fast Switching Speed Low gate ChargeG2 100% avalanche testedS1G1S2 Lead Free and Green Devices Available (RoHS Compliant) PIN1PIN1PDFN3333D1 D2Applications Switchi

 0.723. Size:338K  ruichips
ru3040m2.pdf

M2 M2

RU3040M2N-Channel Advanced Power MOSFETFeatures Pin Description 30V/40A,RDS (ON) =5.8m(Typ.)@VGS=10VDDDRDS (ON) =8.2m(Typ.)@VGS=4.5VDRDS (ON) =16.8m(Typ.) @VGS=2.5V Super High Dense Cell Design Fast Switching Speed Low gate Charge GSSS 100% avalanche testedPIN1 Lead Free and Green Devices Available (RoHS Compliant)PIN1PDFN3333D

 0.724. Size:549K  ait semi
am2304.pdf

M2 M2

AiT Semiconductor Inc. AM2304 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES AM2304 is available in a SOT-23 package. 30V/5.1A R = 25m(max.) @ V = 10V DS(ON) GSR = 35m(max.) @ V = 4.5V DS(ON) GS Reliable and Rugged Available in a SOT-23 package. ORDERING INFORMATION APPLICATION Power Management in Notebook Computer, Por

 0.725. Size:392K  ait semi
am2n7002.pdf

M2 M2

AiT Semiconductor Inc. AM2N7002 www.ait-ic.com SMALL SIGNAL MOSFET 115mA, 60 VOLTS N-CHANNEL MOSFET DESCRIPTION FEATURES Available in SOT-23 and SC70-3 packages. ESD Protected: 1000V Available in SOT-23 and SC70-3 packages ORDERING INFORMATION N CHANNEL MOSFET Package Type Part Number AM2N7002E3R SOT-23 E3 AM2N7002E3VR SC70-3 AM2N7002C3R C3 (SOT-323) AM2N7002C3

 0.726. Size:454K  ait semi
am2303.pdf

M2 M2

AiT Semiconductor Inc. AM2303 www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM2303 is the P-Channel logic enhancement -30V/-4.3A, R =50m(typ.)@V =-10V DS(ON) GSmode power field effect transistor is produced using -30V/-3.5A, R =58m(typ.)@V =-4.5V DS(ON) GShigh cell density. advanced trench technology to -30V/-2.5A, R =73m(typ.

 0.727. Size:336K  ait semi
am2301.pdf

M2 M2

AiT Semiconductor Inc. AM2301 www.ait-ic.com MOSFET -20V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM2301 is the P-Channel logic enhancement -20V/-3.2A, R =90m(typ.)@V =-4.5V DS(ON) GSmode power field effect transistor is produced using -20V/-2.0A, R =130m(typ.)@V =-2.5VDS(ON) GShigh cell density. Advanced trench technology to Super high density cell de

 0.728. Size:468K  ait semi
am2305.pdf

M2 M2

AiT Semiconductor Inc. AM2305 www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM2305 is the P-Channel logic enhancement -30V/-4A, R = 55m@V = -10V DS(ON) GS mode power field effect transistor is produced using -30V/-3A, R = 64m@V = -4.5V DS(ON) GShigh cell density. Advanced trench technology to -30V/-2A, R = 85m@V = -2.5V DS(ON)

 0.729. Size:520K  ait semi
am2n7002k.pdf

M2 M2

AiT Semiconductor Inc. AM2N7002K www.ait-ic.com MOSFET SMALL SIGNAL MOSFET 380mA, 60 VOLTS DESCRIPTION FEATURES The AM2N7002K is available in SOT-23 Package ESD Protected Low R DS(ON) Surface Mount Package RoHS Compliant Available in SOT-23 package ORDERING INFORMATION APPLICATION Low Side Load Switch Package Type Part Number Level Shift Circ

 0.730. Size:527K  ait semi
am2319.pdf

M2 M2

AiT Semiconductor Inc. AM2319 www.ait-ic.com MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES AM2319 is available in a SOT-23S package. -40V/-3A, R = 80m(max.) @ V = -10V DS(ON) GSR = 120m(max.) @ V = -4.5V DS(ON) GS Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Available in a SOT-23S package. ORDERING INFORM

 0.731. Size:443K  ait semi
am2306.pdf

M2 M2

AiT Semiconductor Inc. AM2306 www.ait-ic.com -30V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM2306 is the N-Channel logic enhancement -30V/3.6A, R = 45m(typ.)@V = 10V DS(ON) GSmode power field effect transistor is produced using 30V/2.8A, R = 55m(typ.)@V = 4.5V DS(ON) GShigh cell density. Advanced trench technology to Super high density cell desi

 0.732. Size:454K  ait semi
am2n7002dw.pdf

M2 M2

AiT Semiconductor Inc. AM2N7002DW www.ait-ic.com N-CHANNEL MOSFET SMALL SIGNAL MOSFET 115mA, 60 VOLTS DESCRIPTION FEATURES Available in SOT-363 package. ESD Protected: 1000V Available in SOT-363 package ORDERING INFORMATION N CHANNEL MOSFET Package Type Part Number SOT-363 AM2N7002DWC6R C6 (SC70-6) AM2N7002DWC6VR V: Halogen free Package Note R: Tape & Reel SPQ:

 0.733. Size:668K  ait semi
am2317.pdf

M2 M2

AM2317 AiT Semiconductor Inc. www.ait-ic.com MOSFET -20V P-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM2317 is the P-Channel logic enhancement -20V/-4.6A, R =35m(typ.)@V =-4.5V DS(ON) GSmode power field effect transistor is produced using -20V/-4.1A,R =45m(typ.)@V =-2.5V DS(ON) GShigh cell density advanced trench technology. -20V/-3.6A,R =53m(t

 0.734. Size:330K  ait semi
am2342.pdf

M2 M2

AiT Semiconductor Inc. AM2342 www.ait-ic.com MOSFET 20V N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM2342 is the N-Channel logic enhancement 20V/5.0A, R =25m(typ.)@V =4.5V DS(ON) GSmode power field effect transistor is produced using 20V/4.5A, R =34m(typ.)@V =2.5V DS(ON) GShigh cell density. Advanced trench technology to 20V/4.0A, R =48m(typ.)@V =1.8

 0.735. Size:599K  ait semi
am2308.pdf

M2 M2

AiT Semiconductor Inc. AM2308 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES AM2308 is available in a SOT-23 package. 60V/2.7A, R = 104m(max.) @ V = 10V DS(ON) GSR = 130m(max.) @ V = 4.5V DS(ON) GS Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Available in a SOT-23 package. ORDERING INFORMATI

 0.736. Size:333K  ait semi
am2300.pdf

M2 M2

AiT Semiconductor Inc. AM2300 www.ait-ic.com MOSFET 20V N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM2300 is the N-Channel logic enhancement 20V/4.0A, R =26m(typ.)@V =4.5V DS(ON) GSmode power field effect transistor is produced using 20V/3.0A, R =31m(typ.)@V =2.5V DS(ON) GShigh cell density. Advanced trench technology to 20V/2.0A, R =44m(typ.)@V =1.8

 0.737. Size:434K  ait semi
am2n7002w.pdf

M2 M2

AiT Semiconductor Inc. AM2N7002W www.ait-ic.com N-CHANNEL MOSFET SMALL SIGNAL MOSFET 115mA, 60 VOLTS DESCRIPTION FEATURES Available in SOT-323 package. ESD Protected: 1000V Available in SOT-323 package ORDERING INFORMATION N CHANNEL MOSFET Package Type Part Number SOT-323 AM2N702WC3R C3 (SC70-3) AM2N702WC3VR V: Halogen free Package Note R: Tape & Reel SPQ: 3,0

 0.738. Size:218K  belling
blm2302.pdf

M2 M2

Pb Free Product BLM2302 N-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe BLM2302 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES V = 20V,I = 2.9A D

 0.739. Size:307K  belling
blm2010e.pdf

M2 M2

ROHS Product BLM2010E N-Channel Enhancement Mode Power MOSFET Description The BLM2010E uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features V = 20V,I =7A DS DTyp.R

 0.740. Size:235K  belling
blm2301.pdf

M2 M2

Pb Free Product BLM2301 P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe BLM2301 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram V = -20V,I = -3A DS DR

 0.741. Size:313K  belling
blm2305.pdf

M2 M2

Pb Free Product BLM2305 P-Channel Enhancement Mode Power MOSFET Description DThe BLM2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDS = -20V,ID = -4.1A RDS(ON)

 0.742. Size:413K  chenmko
chm2313qgp.pdf

M2 M2

CHENMKO ENTERPRISE CO.,LTDCHM2313QGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4.6 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-74/SOT-457FEATURE* Small flat package. (SC-74/SOT-457)* High density cell design for extremely low RDS(ON). * Rugged and reliable. (1) (6)

 0.743. Size:69K  chenmko
chm2316gp.pdf

M2 M2

CHENMKO ENTERPRISE CO.,LTDCHM2316GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High sat

 0.744. Size:141K  chenmko
chm2082jgp.pdf

M2 M2

CHENMKO ENTERPRISE CO.,LTDCHM2082JGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 11 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High satu

 0.745. Size:86K  chenmko
chm2407jgp.pdf

M2 M2

CHENMKO ENTERPRISE CO.,LTDCHM2407JGPSURFACE MOUNT Dual P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 5.3 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High

 0.746. Size:108K  chenmko
chm2316qgp.pdf

M2 M2

CHENMKO ENTERPRISE CO.,LTDCHM2316QGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 6 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-74/SOT-457FEATURE* Small flat package. (SC-74/SOT-457)* High density cell design for extremely low RDS(ON). * Rugged and reliable. (1) (6)*

 0.747. Size:115K  chenmko
chm20p06pagp.pdf

M2 M2

CHENMKO ENTERPRISE CO.,LTDCHM20P06PAGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 13 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small flat package. ( TO-252 )* High density cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* Rugged

 0.748. Size:219K  chenmko
chm2304gp.pdf

M2 M2

CHENMKO ENTERPRISE CO.,LTDCHM2304GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 2.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High sat

 0.749. Size:132K  chenmko
chm2301esgp.pdf

M2 M2

CHENMKO ENTERPRISE CO.,LTDCHM2301ESGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 2.8 AmpereAPPLICATION* Po rtable* High speed switchFEATURESOT-23* Small surface mounting type. (SOT-23)* High density cell design for low RDS(ON)* Suitable for high packing density.* Rugged and reliable.(1)* High saturation current capabili

 0.750. Size:62K  chenmko
chm25n15lpagp.pdf

M2 M2

CHENMKO ENTERPRISE CO.,LTDCHM25N15LPAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect TransistorVOLTAGE 150 Volts CURRENT 25 AmpereAPPLICATION* Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON)..094 (2.40).280 (7.10)* High power and current handing capa

 0.751. Size:84K  chenmko
chm2331gp.pdf

M2 M2

CHENMKO ENTERPRISE CO.,LTDCHM2331GPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 4.2 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High sat

 0.752. Size:108K  chenmko
chm21a2pagp.pdf

M2 M2

CHENMKO ENTERPRISE CO.,LTDCHM21A2PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 20 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power

 0.753. Size:108K  chenmko
chm21a3pagp.pdf

M2 M2

CHENMKO ENTERPRISE CO.,LTDCHM21A3PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 20 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power

 0.754. Size:103K  chenmko
chm2331qgp.pdf

M2 M2

CHENMKO ENTERPRISE CO.,LTDCHM2331QGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 4.2 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-74/SOT-457FEATURE* Small flat package. (SC-74/SOT-457)* High density cell design for extremely low RDS(ON). * Rugged and reliable. (1) (6)

 0.755. Size:119K  chenmko
chm2362gp.pdf

M2 M2

CHENMKO ENTERPRISE CO.,LTDCHM2362GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 3 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High satur

 0.756. Size:352K  chenmko
chm2310gp.pdf

M2 M2

CHENMKO ENTERPRISE CO.,LTDCHM2310GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.* High saturati

 0.757. Size:74K  chenmko
chm2314gp.pdf

M2 M2

CHENMKO ENTERPRISE CO.,LTDCHM2314GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High satur

 0.758. Size:120K  chenmko
chm2703qgp.pdf

M2 M2

CHENMKO ENTERPRISE CO.,LTDCHM2703QGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 7 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-74/SOT-457FEATURE* Small flat package. (SC-74/SOT-457)* High density cell design for extremely low RDS(ON). * Rugged and reliable. (1) (6)*

 0.759. Size:183K  chenmko
chm2108jgp.pdf

M2 M2

CHENMKO ENTERPRISE CO.,LTDCHM2108JGPSURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 9.5 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged an

 0.760. Size:48K  chenmko
chm210bgp.pdf

M2 M2

CHENMKO ENTERPRISE CO.,LTDCHM210BGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect TransistorVOLTAGE 100 Volts CURRENT 1.3 AmpereAPPLICATION* Servo motor control.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON).* Rugged and reliable.(2)* High saturation current capability.(3)

 0.761. Size:90K  chenmko
chm2313gp.pdf

M2 M2

CHENMKO ENTERPRISE CO.,LTDCHM2313GPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 3.6 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High sat

 0.762. Size:218K  chenmko
chm2321gp.pdf

M2 M2

CHENMKO ENTERPRISE CO.,LTDCHM2321GPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 3.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)(3) 0.95

 0.763. Size:84K  chenmko
chm2323gp.pdf

M2 M2

CHENMKO ENTERPRISE CO.,LTDCHM2323GPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4.1 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High sat

 0.764. Size:81K  chenmko
chm2401jgp.pdf

M2 M2

CHENMKO ENTERPRISE CO.,LTDCHM2401JGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 6 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High power a

 0.765. Size:110K  chenmko
chm2030jgp.pdf

M2 M2

CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNT CHM2030JGPDual Enhancement Mode Field Effect TransistorN-channel: VOLTAGE 20 Volts CURRENT 6 AmpereP-channel: VOLTAGE 20 Volts CURRENT 4.3 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low R

 0.766. Size:154K  chenmko
chm2313gp-a.pdf

M2 M2

CHENMKO ENTERPRISE CO.,LTDCHM2313GP-ASURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 3.6 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High s

 0.767. Size:40K  chenmko
chm2346esgp.pdf

M2 M2

CHENMKO ENTERPRISE CO.,LTDCHM2346ESGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect TransistorVOLTAGE 60 Volts CURRENT 2.9 AmpereAPPLICATION* Servo motor control.* Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON).* Rugged and reliable.(2)* High satu

 0.768. Size:178K  chenmko
chm2308esgp.pdf

M2 M2

CHENMKO ENTERPRISE CO.,LTDCHM2308ESGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 5.4 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High s

 0.769. Size:85K  chenmko
chm2307gp.pdf

M2 M2

CHENMKO ENTERPRISE CO.,LTDCHM2307GPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 3.2 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High sat

 0.770. Size:97K  chenmko
chm20n06pagp.pdf

M2 M2

CHENMKO ENTERPRISE CO.,LTDCHM20N06PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 20 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power

 0.771. Size:97K  chenmko
chm2305gp.pdf

M2 M2

CHENMKO ENTERPRISE CO.,LTDCHM2305GPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High satur

 0.772. Size:87K  chenmko
chm2342gp.pdf

M2 M2

CHENMKO ENTERPRISE CO.,LTDCHM2342GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts CURRENT 4.2 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High sat

 0.773. Size:151K  crownpo
ctm2n7002.pdf

M2 M2

CTM2N7002Crownpo TechnologySmall Signal MOSFETFeatures General DescriptionHigh Density Cell Design for Low RDS(ON)This N-Channel enhancement mode field effect transistorVoltage Controlled Small Signal Switchis produced using high cell density,DMOS technology.TheseRugged and Reliableproducts have been designed to minimize on-stateHigh Saturation Current Capabilityresistance

 0.774. Size:300K  dawin
dm2g75sh6a.pdf

M2 M2

DM2G75SH6AJuly. 2010High Power NPT & Rugged IGBT ModuleDescription Equivalent Circuit and Package DAWINS IGBT module devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drivesand other applications where switching losses are sign

 0.775. Size:66K  dawin
dm2g150sh12a.pdf

M2 M2

PreliminaryD WTMD WTMApr. 2008DM2G150SH12ADAWIN ElectronicsDAWIN ElectronicsHigh Power SPT+ & Lugged Type IGBT ModuleDescriptionEquivalent Circuit and Package DAWINS IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power

 0.776. Size:196K  dawin
dm2g100sh12a.pdf

M2 M2

PreliminaryDM2G100SH12AApr. 2008High Power SPT+ & Lugged Type IGBT ModuleDescriptionEquivalent Circuit and Package DAWINS IGBT 7DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power inverters, motors drives and other applications wh

 0.777. Size:710K  dawin
dm2g300sh6a.pdf

M2 M2

DM2G300SH6AAug. 2009High Power NPT & Rugged Type IGBT ModuleDescription Equivalent Circuit and Package DAWINS IGBT 7DM-3 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drivesand other applications where switching los

 0.778. Size:301K  dawin
dm2g100sh6n.pdf

M2 M2

DM2G100SH6NJan. 2012High Power Rugged Type IGBT ModuleDescriptionEquivalent Circuit and Package DAWINS IGBT module devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drivesand other applications where switching losses are sign

 0.779. Size:306K  dawin
dm2g150sh6n.pdf

M2 M2

D WTMD WTMDM2G150SH6NDAWIN ElectronicsDAWIN ElectronicsJan. 2012High Power Rugged Type IGBT ModuleEquivalent Circuit and Package DescriptionDAWINS IGBT 7DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors dri

 0.780. Size:199K  dawin
dm2g150sh12ae.pdf

M2 M2

PreliminaryD WTMD WTMDAWIN ElectronicsDAWIN Electronics DM2G150SH12AEDec. 2008High Power SPT+ & Lugged Type IGBT ModuleDescriptionEquivalent Circuit and Package DAWINS IGBT 7DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power

 0.781. Size:523K  dawin
dm2g200sh6a.pdf

M2 M2

D WTMD WTMDM2G200SH6ADAWIN ElectronicsDAWIN ElectronicsAug. 2009High Power NPT & Rugged Type IGBT ModuleDescriptionEquivalent Circuit and Package DAWINS IGBT 7DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, moto

 0.782. Size:524K  dawin
dm2g150sh6a.pdf

M2 M2

D WTMD WTMDM2G150SH6ADAWIN ElectronicsDAWIN ElectronicsAug. 2009High Power NPT & Rugged Type IGBT ModuleDescriptionEquivalent Circuit and Package DAWINS IGBT 7DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, moto

 0.783. Size:198K  dawin
dm2g200sh12ae.pdf

M2 M2

PreliminaryD WTMD WTMDAWIN ElectronicsDAWIN Electronics DM2G200SH12AEDec. 2008High Power SPT+ & Lugged Type IGBT ModuleDescriptionEquivalent Circuit and Package Equivalent Circuit and PackageDAWINS IGBT 7DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modul

 0.784. Size:305K  dawin
dm2g200sh6n.pdf

M2 M2

D WTMD WTMDM2G200SH6NDAWIN ElectronicsDAWIN ElectronicsJan. 2012High Power Rugged Type IGBT ModuleDescriptionEquivalent Circuit and Package DAWINS IGBT 7DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power inverters, motors drive

 0.785. Size:708K  dawin
dm2g400sh6a.pdf

M2 M2

DM2G400SH6AAug. 2009High Power NPT & Rugged Type IGBT ModuleDescription Equivalent Circuit and Package DAWINS IGBT 7DM-3 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drivesand other applications where switching los

 0.786. Size:292K  dawin
dm2g400sh6n.pdf

M2 M2

DM2G400SH6NJan. 2012High Power Rugged Type IGBT ModuleDescription Equivalent Circuit and Package DAWINS IGBT 7DM-3 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drivesand other applications where switching losses ar

 0.787. Size:153K  dawin
dm2g50sh6a.pdf

M2 M2

DM2G50SH6AApr. 2008High Power NPT & Lugged Type IGBT ModuleDescriptionEquivalent Circuit and Package DAWINS IGBT module devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power inverters, motors drivesand other applications where switching losses are

 0.788. Size:307K  dawin
dm2g300sh6ne.pdf

M2 M2

D WTMD WTMDM2G300SH6NEDAWIN ElectronicsDAWIN ElectronicsJan. 2012High Power Rugged Type IGBT ModuleDescription Equivalent Circuit and Package DAWINS IGBT 7DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors dri

 0.789. Size:310K  dawin
dm2g50sh6n.pdf

M2 M2

DM2G50SH6NJan. 2012High Power Rugged Type IGBT ModuleDescription Equivalent Circuit and Package DAWINS IGBT module devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drivesand other applications where switching losses are signif

 0.790. Size:67K  dawin
dm2g300sh12a.pdf

M2 M2

PreliminaryD WTMD WTMDM2G300SH12ADAWIN ElectronicsDAWIN ElectronicsMar. 2008High Power SPT+ & Lugged Type IGBT ModuleDescriptionEquivalent Circuit and Package Equivalent Circuit and PackageDAWINS IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modul

 0.791. Size:326K  dawin
dm2g100sh6a.pdf

M2 M2

DM2G100SH6AJuly. 2010High Power NPT & Rugged Type IGBT ModuleDescription Equivalent Circuit and Package DAWINS IGBT module devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drivesand other applications where switching losses ar

 0.792. Size:254K  dawin
dm2g150sh6ne.pdf

M2 M2

D WTMD WTMDM2G150SH6NEDAWIN ElectronicsDAWIN ElectronicsJan. 2012High Power Rugged Type IGBT ModuleEquivalent Circuit and Package DescriptionDAWINS IGBT module devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives6

 0.793. Size:328K  dawin
dm2g75sh6n.pdf

M2 M2

DM2G75SH6NJan. 2012High Power Rugged Type IGBT ModuleDescription Equivalent Circuit and Package DAWINS IGBT module devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drivesand other applications where switching losses are signif

 0.794. Size:66K  dawin
dm2g200sh12a.pdf

M2 M2

PreliminaryD WTMD WTMMar. 2008DM2G200SH12ADAWIN ElectronicsDAWIN ElectronicsHigh Power SPT+ & Lugged Type IGBT ModuleHigh Power SPT+ & Lugged Type IGBT ModuleDescriptionEquivalent Circuit and Package Equivalent Circuit and PackageDAWINS IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical syste

 0.795. Size:64K  dawin
dm2g50sh12a.pdf

M2 M2

DM2G50SH12AMar. 2008High Power SPT+ & Lugged Type IGBT ModuleDescriptionEquivalent Circuit and Package DAWINS IGBT 7DM-1 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power inverters, motors drives and other applications where switching

 0.796. Size:63K  dawin
dm2g75sh12a.pdf

M2 M2

Mar. 2008DM2G75SH12ADM2G75SH12AHigh Power SPT+ & Lugged Type IGBT ModuleDescriptionEquivalent Circuit and Package DAWINS IGBT 7DM-1 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power inverters, motors drives and other applications whe

 0.797. Size:435K  dynex
dim2400ess12-a.pdf

M2 M2

DIM2400ESS12-A000 Single Switch IGBT Module Replaces DS5840-1.1 DS5840-2 October 2010 (LN27616) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V Non Punch Through Silicon IC (max) 2400A Isolated Cu Base with Al2O3 Substrates IC(PK) (max) 4800A Lead Free construction * Measured at the power busbars, not the auxiliary

 0.798. Size:425K  dynex
dim200phm33-f.pdf

M2 M2

DIM200PHM33-F000 Half Bridge IGBT Module Replaces DS5606-4 DS5606-5 October 2011 (LN28814) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.8V High Thermal Cycling Capability IC (max) 200A Soft Punch Through Silicon IC(PK) (max) 400A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals Le

 0.799. Size:430K  dynex
dim200pkm33-f.pdf

M2 M2

DIM200PKM33-F000 IGBT Chopper Module Replaces DS5865-2 DS5865-3 October 2011 (LN28813) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.8V High Thermal Cycling Capability IC (max) 200A Soft Punch Through Silicon IC(PK) (max) 400A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals Lead F

 0.800. Size:487K  dynex
dim250pkm33-ts.pdf

M2 M2

DIM250PKM33-TS000 IGBT Chopper Module Replaces DS6106-1 DS6106-2 July 2013 (LN30763) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 250A High Current Density Enhanced DMOS SPT IC(PK) (max) 500A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals

 0.801. Size:486K  dynex
dim250plm33-tl.pdf

M2 M2

DIM250PLM33-TL000 IGBT Chopper Module DS6115-1 July 2013 (LN30664) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10s Short Circuit Withstand IC (max) 250A High Thermal Cycling Capability IC(PK) (max) 500A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base with AlN Subs

 0.802. Size:486K  dynex
dim250pkm33-tl.pdf

M2 M2

DIM250PKM33-TL000 IGBT Chopper Module DS6117-1 July 2013 (LN30666) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10s Short Circuit Withstand IC (max) 250A High Thermal Cycling Capability IC(PK) (max) 500A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base with AlN Subs

 0.803. Size:465K  dynex
dim250phm33-tl.pdf

M2 M2

DIM250PHM33-TL000 Half Bridge IGBT Module DS6116-1 July 2013 (LN30665) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10s Short Circuit Withstand IC (max) 250A High Thermal Cycling Capability IC(PK) (max) 500A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base with AlN

 0.804. Size:465K  dynex
dim250phm33-ts.pdf

M2 M2

DIM250PHM33-TS000 Half Bridge IGBT Module DS6092-1 April 2013 (LN30402) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 250A High Current Density Enhanced DMOS SPT IC(PK) (max) 500A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals APPLICATIONS

 0.805. Size:463K  dynex
dim2400esm17-a.pdf

M2 M2

DIM2400ESM17-A000 Single Switch IGBT Module Replaces DS54447-5 DS5447-6 June 2012 (LN29603) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1700V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 2400A Non Punch Through Silicon IC(PK) (max) 4800A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the aux

 0.806. Size:486K  dynex
dim250plm33-ts.pdf

M2 M2

DIM250PLM33-TS000 IGBT Chopper Module Replaces DS6108-1 DS6108-2 July 2013 (LN30764) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 250A High Current Density Enhanced DMOS SPT IC(PK) (max) 500A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals

 0.807. Size:437K  dynex
dim2400esm12-a.pdf

M2 M2

DIM2400ESM12-A000 Single Switch IGBT Module Replaces DS5536-3.0 DS5536-4 October 2010 (LN27615) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 2400A Non Punch Through Silicon IC(PK) (max) 4800A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the

 0.808. Size:430K  dynex
dim200plm33-f.pdf

M2 M2

DIM200PLM33-F000 IGBT Chopper Module Replaces DS5864-2 DS5864-3 October 2011 (LN28812) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.8V High Thermal Cycling Capability IC (max) 200A Soft Punch Through Silicon IC(PK) (max) 400A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals Lead F

 0.809. Size:665K  elm
elm24604ha.pdf

M2 M2

Complementary MOSFET ELM24604HA-SGeneral Description Features ELM24604HA-S uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=40V Vds=-40Vand low gate charge. Id=8A(Vgs=10V) Id=-8A(Vgs=-10V) Rds(on)

 0.810. Size:665K  elm
elm24603ha.pdf

M2 M2

Complementary MOSFET ELM24603HA-SGeneral Description Features ELM24603HA-S uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=60V Vds=-60Vand low gate charge. Id=12A(Vgs=10V) Id=-12A(Vgs=-10V) Rds(on)

 0.811. Size:944K  globaltech semi
gsm2317.pdf

M2 M2

GSM2317 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM2317, P-Channel enhancement mode -40V/-3.6A,RDS(ON)=52m@VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-3.2A,RDS(ON)=67m@VGS=-4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited f

 0.812. Size:951K  globaltech semi
gsm2319as.pdf

M2 M2

GSM2319AS 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM2319AS, P-Channel enhancement mode -40V/-3.0A,RDS(ON)=90m@VGS=-10V MOSFET, uses Advanced Trench -40V/-2.4A,RDS(ON)=120m@VGS=-4.5VTechnology to provide excellent RDS(ON), low Super high density cell design for gate charge. extremely low RDS (ON) Exceptional on-resistance andThes

 0.813. Size:416K  globaltech semi
gsm2311.pdf

M2 M2

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2311, P-Channel enhancement mode -20V/-4.0A,RDS(ON)=56m@VGS=4.5V MOSFET, uses Advanced Trench -20V/-3.2A,RDS(ON)=70m@VGS=2.5V Technology to provide excellent RDS(ON), low -20V/-2.8A,RDS(ON)=96m@VGS=1.8V gate charge. Super high density cell design for These devices are particularly suited f

 0.814. Size:832K  globaltech semi
gsm2330.pdf

M2 M2

GSM2330 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM2330, N-Channel enhancement mode 90V/2.8A,RDS(ON)=190m@VGS=10V MOSFET, uses Advanced Trench Technology 90V/2.0A,RDS(ON)=200m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 0.815. Size:1714K  globaltech semi
gsm2519.pdf

M2 M2

GSM2519 GSM2519 20V N&P Pair Enhancement Mode MOSFETProduct Description Features GSM2519, N & P Pair enhancement mode N-ChannelMOSFET, uses Advanced Trench Technology to 20V/4.5A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON), low gate charge. 20V/3.6A,RDS(ON)=60m@VGS=2.5V 20V/2.4A,RDS(ON)=80m@VGS=1.8V These devices are particularly suited for low P-Channelvoltage

 0.816. Size:902K  globaltech semi
gsm2912.pdf

M2 M2

GSM2912 GSM2912 20V N-CH Enhancement Mode MOSFET Product Description Features GSM2912, N-Channel enhancement mode 20V/4.5A,RDS(ON)=50m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.6A,RDS(ON)=60m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.4A,RDS(ON)=78m@VGS=1.8V Super high density cell design for extremely These devices are particula

 0.817. Size:892K  globaltech semi
gsm2336a.pdf

M2 M2

GSM2336A 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2336A, N-Channel enhancement mode 30V/1.8A,RDS(ON)=380m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 30V/1.5A,RDS(ON)=480m@VGS=2.5V provide excellent RDS(ON), low gate charge. 30V/1.2A,RDS(ON)=900m@VGS=1.8V Super high density cell design for extremely These devices are p

 0.818. Size:832K  globaltech semi
gsm2324.pdf

M2 M2

GSM2324 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM2324, N-Channel enhancement mode 100V/2.3A,RDS(ON)=285m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/1.8A,RDS(ON)=295m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for lo

 0.819. Size:914K  globaltech semi
gsm2303a.pdf

M2 M2

GSM2303A GSM2303A 30V P-Channel Enhancement Mode MOSFET Product Description Features -30V/-2.8A,RDS(ON)=145m@VGS=-10.0V GSM2303A, P-Channel enhancement mode -30V/-2.4A,RDS(ON)=180m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-res

 0.820. Size:1173K  globaltech semi
gsm2323.pdf

M2 M2

GSM2323 GSM2323 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM2323, P-Channel enhancement mode -30V/-3.6A,RDS(ON)=150m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-3.2A,RDS(ON)=235m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited fo

 0.821. Size:877K  globaltech semi
gsm2301as.pdf

M2 M2

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301AS, P-Channel enhancement mode -20V/-2.4A,RDS(ON)=125m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.0A,RDS(ON)=170m@VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low voltage

 0.822. Size:842K  globaltech semi
gsm2367as.pdf

M2 M2

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2367AS, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=80m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.5A,RDS(ON)=98m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-2.2A,RDS(ON)=130m@VGS=-1.8V These devices are particularly suited for low Super high density cell

 0.823. Size:758K  globaltech semi
gsm2304a.pdf

M2 M2

GSM2304A 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304A, N-Channel enhancement mode 30V/2.6A,RDS(ON)=82m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=108m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low Exce

 0.824. Size:1242K  globaltech semi
gsm2302as.pdf

M2 M2

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2302AS, N-Channel enhancement mode 20V/2.4A,RDS(ON)=90m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/2.0A,RDS(ON)=110m@VGS=2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low Exceptional on-

 0.825. Size:832K  globaltech semi
gsm2330a.pdf

M2 M2

GSM2330A 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM2330A, N-Channel enhancement mode 90V/2.8A,RDS(ON)=200m@VGS=10V MOSFET, uses Advanced Trench Technology 90V/2.0A,RDS(ON)=210m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 0.826. Size:903K  globaltech semi
gsm2333a.pdf

M2 M2

GSM2333A GSM2333A 25V P-Channel Enhancement Mode MOSFET Product Description Features -25V/-2.8A,RDS(ON)=145m@VGS=-10V GSM2333A, P-Channel enhancement mode -25V/-2.4A,RDS(ON)=180m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-resis

 0.827. Size:827K  globaltech semi
gsm2301s.pdf

M2 M2

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301S, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=120m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.0A,RDS(ON)=170m@VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for These devices are particularly suited for low extremely low RDS (ON) volt

 0.828. Size:946K  globaltech semi
gsm2341.pdf

M2 M2

P-Channel Enhancement Mode MOSFET Product Description Features GSM2341, P-Channel enhancement mode -20V/-3.0A,RDS(ON)= 50m@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.6A,RDS(ON)= 64m@VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.0A,RDS(ON)= 80m@VGS=-1.8V Super high density cell design for extremely These devices are particularly suited

 0.829. Size:886K  globaltech semi
gsm2911.pdf

M2 M2

GSM2911 GSM2911 20V P-CH Enhancement Mode MOSFET Product Description Features GSM2911, P-Channel enhancement mode P-ChannelMOSFET, uses Advanced Trench Technology to -20V/-4.5A,RDS(ON)= 96m@VGS=-4.5V provide excellent RDS(ON), low gate charge. These -20V/-3.8A,RDS(ON)=128m@VGS=-2.5V devices are particularly suited for low voltage -20V/-2.5A,RDS(ON)=180m@VGS=-1.8V po

 0.830. Size:981K  globaltech semi
gsm2604.pdf

M2 M2

40V N-Channel Enhancement Mode MOSFET Product Description Features GSM2604, N-Channel enhancement mode 40V/20A,RDS(ON)= 22m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/12A,RDS(ON)= 40m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

 0.831. Size:881K  globaltech semi
gsm2309a.pdf

M2 M2

GSM2309A 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM2309A, P-Channel enhancement mode -60V/-1.8A,RDS(ON)=305m@VGS=-10V MOSFET, uses Advanced Trench -60V/-1.6A,RDS(ON)=320m@VGS=-4.5V Technology to provide excellent RDS(ON), low Super high density cell design for gate charge. extremely low RDS (ON) Exceptional on-resistance and maxim

 0.832. Size:881K  globaltech semi
gsm2309.pdf

M2 M2

GSM2309 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM2309, P-Channel enhancement mode -60V/-1.8A,RDS(ON)=305m@VGS=-10V MOSFET, uses Advanced Trench -60V/-1.4A,RDS(ON)=320m@VGS=-4.5V Technology to provide excellent RDS(ON), low Super high density cell design for gate charge. extremely low RDS (ON) Exceptional on-resistance and maximum

 0.833. Size:936K  globaltech semi
gsm2354.pdf

M2 M2

GSM2354 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM2354, N-Channel enhancement mode 100V/3.2A,RDS(ON)=145m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/2.6A,RDS(ON)=160m@VGS=4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 0.834. Size:422K  globaltech semi
gsm2318a.pdf

M2 M2

GSM2318A 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM2318A, N-Channel enhancement mode 40V/2.6A,RDS(ON)=68m@VGS=10VMOSFET, uses Advanced Trench 40V/2.2A,RDS(ON)=88m@VGS=4.5VTechnology to provide excellent RDS(ON), low Super high density cell design for gate charge. extremely low RDS (ON) These devices are particularly suited for low

 0.835. Size:816K  globaltech semi
gsm2301a.pdf

M2 M2

20V P-Channel Enhancement Mode MOSFET Product Description Features -20V/-2.6A,RDS(ON)=120m@VGS=-4.5V GSM2301A, P-Channel enhancement mode -20V/-2.2A,RDS(ON)=170m@VGS=-2.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) These devices are particularly suited for low

 0.836. Size:860K  globaltech semi
gsm2337a.pdf

M2 M2

GSM2337A GSM2337A 30V P-Channel Enhancement Mode MOSFET Product Description Features -30V/-1.2A,RDS(ON)=890m@VGS=-10V GSM2337A, P-Channel enhancement mode -30V/-0.6A,RDS(ON)=1450m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-resi

 0.837. Size:1189K  globaltech semi
gsm2312.pdf

M2 M2

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2312, N-Channel enhancement mode 20V/4.0A,RDS(ON)=36m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.2A,RDS(ON)=40m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=52m@VGS=1.8V These devices are particularly suited for low Super high density cell design for e

 0.838. Size:477K  globaltech semi
gsm2301.pdf

M2 M2

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=105m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.4A,RDS(ON)=155m@VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) volta

 0.839. Size:947K  globaltech semi
gsm2306a.pdf

M2 M2

GSM2306A 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2306A, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=340m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=750m@VGS=1.8V Super high density cell design for These devices are particularl

 0.840. Size:950K  globaltech semi
gsm2376.pdf

M2 M2

GSM2376 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM2376, N-Channel enhancement mode 60V/3.6A,RDS(ON)=70m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/2.8A,RDS(ON)=78m@VGS=4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low Exce

 0.841. Size:963K  globaltech semi
gsm2304.pdf

M2 M2

GSM2304 GSM230430V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304, N-Channel enhancement mode 30V/3.6A,RDS(ON)=78m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.8A,RDS(ON)=105m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 0.842. Size:747K  globaltech semi
gsm2304as.pdf

M2 M2

GSM2304AS 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304AS, N-Channel enhancement mode 30V/2.4A,RDS(ON)=65m@VGS=10VMOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=90m@VGS=4.5Vto provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low SOT-2

 0.843. Size:953K  globaltech semi
gsm2379.pdf

M2 M2

GSM2379 GSM2379 60V P-Channel Enhancement Mode MOSFET Product Description Features -60V/-3.6A,RDS(ON)=135m@VGS=-10.0V GSM2379, P-Channel enhancement mode -60V/-2.6A,RDS(ON)=150m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-resist

 0.844. Size:953K  globaltech semi
gsm2307a.pdf

M2 M2

GSM2307A GSM2307A 20V P-Channel Enhancement Mode MOSFET Product Description Features -20V/-1.8A,RDS(ON)=520m@VGS=-4.5V GSM2307A, P-Channel enhancement mode -20V/-1.5A,RDS(ON)=870m@VGS=-2.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-resi

 0.845. Size:850K  globaltech semi
gsm2367s.pdf

M2 M2

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2367S, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=65m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.4A,RDS(ON)=80m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-2.0A,RDS(ON)=105m@VGS=-1.8V These devices are particularly suited for low Super high density cell d

 0.846. Size:461K  globaltech semi
gsm2318.pdf

M2 M2

GSM2318 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM2318, N-Channel enhancement mode 40V/3.6A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/2.8A,RDS(ON)=80m@VGS=4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) Volta

 0.847. Size:1024K  globaltech semi
gsm2319a.pdf

M2 M2

GSM2319A 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM2319A, P-Channel enhancement mode -40V/-3.0A,RDS(ON)=100m@VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-2.4A,RDS(ON)=130m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited f

 0.848. Size:813K  globaltech semi
gsm2308a.pdf

M2 M2

GSM2308A 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM2308A, N-Channel enhancement mode 60V/2.8A,RDS(ON)=135m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/2.0A,RDS(ON)=145m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 0.849. Size:847K  globaltech semi
gsm2311a.pdf

M2 M2

GSM2311A 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2311A, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=68m@VGS=-4.5V MOSFET, uses Advanced Trench -20V/-2.2A,RDS(ON)=80m@VGS=-2.5V Technology to provide excellent RDS(ON), low -20V/-1.8A,RDS(ON)=105m@VGS=-1.8V gate charge. Super high density cell design for These devices are parti

 0.850. Size:885K  globaltech semi
gsm2324a.pdf

M2 M2

GSM2324A 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM2324A, N-Channel enhancement mode 100V/2.3A,RDS(ON)=310m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/1.8A,RDS(ON)=320m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

 0.851. Size:914K  globaltech semi
gsm2303.pdf

M2 M2

GSM2303 GSM2303 30V P-Channel Enhancement Mode MOSFET Product Description Features -30V/-3.6A,RDS(ON)=130m@VGS=-10.0V GSM2303, P-Channel enhancement mode -30V/-3.2A,RDS(ON)=170m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-resist

 0.852. Size:948K  globaltech semi
gsm2306ae.pdf

M2 M2

GSM2306AE 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2306AE, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/1.5A,RDS(ON)=340m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=750m@VGS=1.8V Super high density cell design for These devices are particula

 0.853. Size:760K  globaltech semi
gsm2308.pdf

M2 M2

GSM2308 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM2308, N-Channel enhancement mode 60V/3.6A,RDS(ON)=130m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/2.8A,RDS(ON)=140m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 0.854. Size:448K  globaltech semi
gsm2302s.pdf

M2 M2

GSM2302S GSM2302S 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2302S, N-Channel enhancement mode 20V/3.6A,RDS(ON)=85m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.2A,RDS(ON)=100m@VGS=2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

 0.855. Size:1420K  globaltech semi
gsm2913w.pdf

M2 M2

GSM2913W GSM2913W 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM2913W, P-Channel enhancement mode -30V/-4.5A,RDS(ON)=120m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-3.8A,RDS(ON)=155m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

 0.856. Size:969K  globaltech semi
gsm2014.pdf

M2 M2

GSM2014 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2014, N-Channel enhancement mode 20V/10A,RDS(ON)=14m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/8A,RDS(ON)=17m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/5A,RDS(ON)=21m@VGS=1.8V Super high density cell design for extremely These devices are particularl

 0.857. Size:870K  globaltech semi
gsm2343a.pdf

M2 M2

GSM2343A 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2343A, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=70m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.4A,RDS(ON)=92m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-2.0A,RDS(ON)=180m@VGS=-1.8V Super high density cell design for These devices are part

 0.858. Size:671K  globaltech semi
gsm2323a.pdf

M2 M2

GSM2323A 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM2323A, P-Channel enhancement mode -30V/-2.8A,RDS(ON)=155m@VGS=-10VMOSFET, uses Advanced Trench -30V/-2.4A,RDS(ON)=240m@VGS=-4.5VTechnology to provide excellent RDS(ON), low Super high density cell design for gate charge. extremely low RDS (ON) These devices are particularly suited for

 0.859. Size:1178K  globaltech semi
gsm2312a.pdf

M2 M2

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2312A, N-Channel enhancement mode 20V/2.8A,RDS(ON)=45m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/2.2A,RDS(ON)=48m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/1.8A,RDS(ON)=64m@VGS=1.8V These devices are particularly suited for low Super high density cell design for

 0.860. Size:754K  globaltech semi
gsm2304s.pdf

M2 M2

GSM2304S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304S, N-Channel enhancement mode 30V/3.6A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.5A,RDS(ON)=85m@VGS=4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (O

 0.861. Size:572K  goodark
ssfm2508.pdf

M2 M2

SSFM2508 25V N-Channel MOSFET Main Product Characteristics: VDSS 25V SSFM2508SSFM2508RDS(on) 8mohm ID 55A Marking and pin Marking and pinTO-252 DPAKTO-252 DPAKassignmentassignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low

 0.862. Size:677K  goodark
ssfm2506l.pdf

M2 M2

SSFM2506L 25V N-Channel MOSFET Main Product Characteristics: VDSS 25V SSSFFM25006SSSFFM25006SSSFFM25006SSSFFM25006S M 25 8S M 25 8S M 25 8S M 25 8SS F M 2508SS F M 2508SS F M 2508SS F M 2508SSFM2506LSSFM2506L RDS(on) 6mohm Marking and pinMarking and pinMarking and pinMarking and pinMarking and pinMarking and pinMarking and pinMarking and pin

 0.863. Size:545K  jiaensemi
jfam20n50d.pdf

M2 M2

JFAM20N50D 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 0.864. Size:733K  jiaensemi
jfhm20n60e.pdf

M2 M2

JFHM20N60E 600V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 0.865. Size:497K  jiaensemi
jfam24n50c.pdf

M2 M2

JFAM24N50C 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 0.866. Size:833K  jiaensemi
jfam20n65c.pdf

M2 M2

JFAM20N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 0.867. Size:1003K  jiaensemi
jfam20n60e.pdf

M2 M2

JFAM20N60E 600V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 0.868. Size:843K  jiaensemi
jffm20n60c.pdf

M2 M2

JFFM20N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 0.869. Size:890K  jiaensemi
jfpc20n50c jffm20n50c.pdf

M2 M2

JFFM20N50C JFPC20N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 20A, 500V, RDS(on)typ. = 0.21@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf

 0.870. Size:711K  jiaensemi
jfhm20n60c.pdf

M2 M2

JFHM20N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 0.871. Size:548K  jiaensemi
jfam20n65e.pdf

M2 M2

JFAM20N65E 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 0.872. Size:530K  jiaensemi
jfam20n60d.pdf

M2 M2

JFAM20N60D 600V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 0.873. Size:845K  jiaensemi
jfam20n50c.pdf

M2 M2

JFAM20N50C 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 0.874. Size:1363K  jiaensemi
jfam25n50e.pdf

M2 M2

JFAM25N50E 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 0.875. Size:505K  jiaensemi
jfpc24n50c jffm24n50c.pdf

M2 M2

JFFM24N50C JFPC24N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 24A, 500V, RDS(on)typ. = 0.19@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf

 0.876. Size:541K  jiaensemi
jfam20n50e.pdf

M2 M2

JFAM20N50E 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 0.877. Size:1053K  jiaensemi
jfam20n60c.pdf

M2 M2

JFAM20N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 0.878. Size:427K  kodenshi
sum201mn.pdf

M2 M2

SUM201MNP-Channel MOSFET + PNP BJTIntegrated Power MOSFET with PNP Low VCE(sat) Switching Transistor DFN-8 This integrated device represents a new level of safety andboard-space reduction by combining the 20V P-Channel FET with aPNP Silicon Low VCE(sat) switching transistor. This newly integratedproduct provides higher efficiency and accuracy for battery poweredMOSFET portab

 0.879. Size:260K  macmic
skm200gah123dkl.pdf

M2 M2

SKM200GAH123DKL 1200V 200A CHOPPER Module August 2011 PRELIMINARY RoHS Compliant FEATURES Ultra Low Loss High Ruggedness High Short Circuit Capability VCE(sat) With Positive Temperature Coefficient With Fast Free-Wheeling Diodes APPLICATIONS AC and DC motor control AC servo and robot drives Power supplies Welding inverters ABSOLUTE

 0.880. Size:265K  macmic
skm200gal123dkld110.pdf

M2 M2

SKM200GAL123DKLD110 1200V 200A RECTIFIER AND CHOPPER Module August 2011 PRELIMINARY RoHS Compliant FEATURES Ultra Low Loss High Ruggedness High Short Circuit Capability VCE(sat) With Positive Temperature Coefficient With Fast Free-Wheeling Diodes APPLICATIONS AC and DC motor control AC servo and robot drives Power supplies Welding in

 0.881. Size:152K  macmic
mm25g120b.pdf

M2 M2

MM25G120B 1200V 25A IGBT October 2012 PRELIMINARY RoHS Compliant FEATURES Low switching losses Low EMI Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery VCE(sat) with positive temperature coefficient APPLICATIONS High frequency switching application Medical applications 1.Gate Motion/servo con

 0.882. Size:511K  macmic
mm20g3r135b.pdf

M2 M2

MM20G3R135B1350V 20A RC- IGBTMarch 2018 Preliminary RoHS CompliantPRODUCT FEATURES 1350V Reverse conducting IGBT with monolithic body diode VCE(sat) with positive temperature coefficient Low switching losses Low EMI123APPLICATIONS HInductive cooking1.Gate Inverterized microwave ovens2.Collector3.Emitter Resonant converters Soft switchi

 0.883. Size:316K  macmic
mm20n050p.pdf

M2 M2

MM20N050P 500V 20A N-Channel MOSFET March 2011 PRELIMINARY RoHS Compliant FEATURES Low drain-source ON resistance High forward transfer admittance Repetitive avalanche ratings Simple drive requirements Ease of paralleling APPLICATIONS 1.GATE Switching power supplies 2.DRAIN Motor controls 3.SOURCE Inverters and choppers Audio a

 0.884. Size:212K  macmic
mm25g3u120bx.pdf

M2 M2

MM25G3U120BX1200V 25A IGBTAugust 2018 Preliminary RoHS CompliantPRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery123APPLICATIONS High frequency switching application1.Gate Medical ap

 0.885. Size:171K  macmic
mm25g3t120b.pdf

M2 M2

MM25G3T120B1200V 25A IGBTApril 2018 Version 01 RoHS CompliantPRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery123APPLICATIONS High frequency switching application1.Gate Medical appli

 0.886. Size:342K  macmic
mm20g3t135b.pdf

M2 M2

MM20G3T135B1350V 20A IGBTApril 2020 Version 02 RoHS CompliantPRODUCT FEATURES 1350V IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery123APPLICATIONS Induction Heating1.Gate Soft Switching Application

 0.887. Size:785K  oriental semi
ost90n65hm2f.pdf

M2 M2

OST90N65HM2F Enhancement Mode N-Channel Power IGBT General Description OST90N65HM2F uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 0.888. Size:805K  oriental semi
ost75n65hm2f.pdf

M2 M2

OST75N65HM2F Enhancement Mode N-Channel Power IGBT General Description OST75N65HM2F uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 0.889. Size:793K  oriental semi
ost75n120hm2f.pdf

M2 M2

OST75N120HM2F Enhancement Mode N-Channel Power IGBT General Description OST75N120HM2F uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM techn

 0.890. Size:608K  oriental semi
ost75n65hem2f.pdf

M2 M2

OST75N65HEM2F Enhancement Mode N-Channel Power IGBT General Description OST75N65HEM2F uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM techn

 0.891. Size:765K  oriental semi
ost50n65hm2f.pdf

M2 M2

OST50N65HM2F Enhancement Mode N-Channel Power IGBT General Description OST50N65HM2F uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 0.892. Size:39K  powerex
cm200dy-12h.pdf

M2 M2

CM200DY-12HPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Dual IGBTMODH-Series Module200 Amperes/600 VoltsABH E E HSC2E1 E2 C1GC KSLDescription:R - M5 THD (3 TYP.)Powerex IGBTMOD ModulesP - DIA. (2 TYP.)are designed for use in switching.110 TABJ J Japplications. Each module consistsN Nof two IGBT Transistors

 0.893. Size:105K  powerex
cm200tu-12f.pdf

M2 M2

CM200TU-12FPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignSix IGBTMOD200 Amperes/600 VoltsJT (4 TYP.)KS - NUTS (5 TYP)KRCMN PP GUP EUP GVP EVP GWP EWPL N L N LB EQMGUN EUN GVN EVN GWN EWNTC TC MEASURING MEASURINGPOINT U V W POINTDescription:J JPowerex IGBTMOD ModulesLLLare designed

 0.894. Size:86K  powerex
cm200du-12f.pdf

M2 M2

CM200DU-12FPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignDual IGBTMOD200 Amperes/600 VoltsP - NUTS (3 PLACES)TC MEASURINGPOINTAN DQ (2 PLACES)EC2E1 E2 C1FB GHFDescription:Powerex IGBTMOD Modulesare designed for use in switchingM K K JRapplications. Each module consistsof two IGBT Transisto

 0.895. Size:429K  powerex
fm200tu-07a.pdf

M2 M2

FM200TU-07APowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 6-Pack High Power www.pwrx.comMOSFET Module100 Amperes/75 VoltsAG DF NHX (11 PLACES)G QK L M LPZACABAB NPRAD AEJ7 1 13W14B E TBSATCMEASUREDAF12 6 POINTU V WZ Z ZAA AADescription:YPowerex MOSFET Modules are VK M M XQUdesig

 0.896. Size:430K  powerex
fm200tu-2a.pdf

M2 M2

FM200TU-2APowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 6-Pack High Power www.pwrx.comMOSFET Module100 Amperes/100 VoltsAG DF NHX (11 PLACES)G QK L M LPZACABAB NPRAD AEJ7 1 13W14B E TBSATCMEASUREDAF12 6 POINTU V WZ Z ZAA AADescription:YPowerex MOSFET Modules are VK M M XQUdesig

 0.897. Size:438K  powerex
fm200tu-3a.pdf

M2 M2

FM200TU-3APowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 6-Pack High Power www.pwrx.comMOSFET Module100 Amperes/150 VoltsAG DF NHX (11 PLACES)G QK L M LPZACABAB NPRAD AEJ7 1 13W14B E TBSATCMEASUREDAF12 6 POINTU V WZ Z ZAA AADescription:YPowerex MOSFET Modules are VK M M XQUdesig

 0.898. Size:60K  powerex
cm200dy-12nf.pdf

M2 M2

CM200DY-12NFPowerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Dual IGBTMODNF-Series Module200 Amperes/600 VoltsTC MEASURED POINT(BASEPLATE)AF FE EG2E2 GBJN HC2E1 E2 C1 E1G1 GDescription:Powerex IGBTMOD ModulesK K Kare designed for use in switchingM NUTS LD(3 PLACES)(2 PLACES) applications. Each module co

 0.899. Size:112K  prisemi
pnm23t703e0-2.pdf

M2 M2

PNM23T703E0-2 N-Channel MOSFET Description PNM23T703E0-2 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary VDS(V) RDS(on)() VGS(th)(V) ID(A) G1 40 7.5@ VGS=10V 0.5 to 1.5 0.2 S2 Electrical characteristics per line@25( unless otherwise specified)

 0.900. Size:125K  prisemi
pnm23t100v6.pdf

M2 M2

PNM23T100V6 N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary D (2) VDS(V) RDS(on)(m) ID(A) 100 110@VGS=10V 6G (1) S (3) Absolute maximum rating@25 Parameter Symbol Maximum Units Drain-Source Voltage VDS 100 VGate-Source Voltage VGS 20 V Drain Current- C

 0.901. Size:251K  sanrise-tech
srm20n65.pdf

M2 M2

Datasheet 20A, 650V, N-Channel Power MOSFET SRM20N65General Description Symbol The Sanrise SRM20N65 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM20N65 break down voltage rating is 650V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at hi

 0.902. Size:191K  sanrise-tech
srm2n60.pdf

M2 M2

Datasheet 2A, 600V, N-Channel Power MOSFET SRM2N60General Description Symbol The Sanrise SRM2N60 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM2N60 break down voltage rating is 600V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high

 0.903. Size:1899K  sanrise-tech
src65r220m2.pdf

M2 M2

Datasheet220m, 650V, Super Junction N-Channel Power MOSFET SRC65R220M2General Description SymbolThe Sanrise SRC65R220M2 is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

 0.904. Size:2195K  sanrise-tech
src65r800m2.pdf

M2 M2

Datasheet800m, 650V, Super Junction N-Channel Power MOSFET SRC65R800M2General Description SymbolThe Sanrise SRC65R800M2 is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

 0.905. Size:675K  semikron
skm200gal173d.pdf

M2 M2

 0.906. Size:713K  semikron
skm200gb124d.pdf

M2 M2

 0.907. Size:644K  semikron
skm200gar123d.pdf

M2 M2

 0.908. Size:1202K  semikron
skim220gd176dh4.pdf

M2 M2

 0.909. Size:378K  semikron
skm200gb12e4.pdf

M2 M2

SKM200GB12E4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 314 ATj = 175 CTc =80C 242 AICnom 200 AICRM ICRM = 3xICnom 600 AVGES -20 ... 20 VVCC = 800 VSEMITRANS3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CIGBT4 ModulesInverse diodeIF Tc =25C 229 ATj = 175 CSKM200GB12E4Tc =80C 172 A

 0.910. Size:415K  semikron
skm200gal12t4.pdf

M2 M2

SKM200GAL12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 314 ATj = 175 CTc =80C 242 AICnom 200 AICRM ICRM = 3xICnom 600 AVGES -20 ... 20 VVCC = 800 VSEMITRANS3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 229 ATj = 175 CSKM200GAL12T4Tc =80

 0.911. Size:621K  semikron
skm22gd123d.pdf

M2 M2

 0.912. Size:684K  semikron
skm200gar12e4.pdf

M2 M2

SKM200GAR12E4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 313 ATj = 175 CTc =80C 241 AICnom 200 AICRM ICRM = 3xICnom 600 AVGES -20 ... 20 VVCC = 800 VSEMITRANS 3tpsc VGE 15 V Tj =150C 10 sVCES 1200 VTj -40 ... 175 CIGBT4 ModulesInverse diodeIF Tc =25C 229 ATj = 175 CSKM200GAR12E4Tc =

 0.913. Size:939K  semikron
skm200gbd123d1s.pdf

M2 M2

SEMITRANS MAbsolute Maximum Ratings ValuesIGBT ModulesSymbol Conditions 1) UnitsV 1200 VCESSKM 200 GBD 123 D 1SV R = 20 k 1200 VCGR GEI T = 25/80 C 200 / 180 AC caseI Tcase = 25/80 C; tp = 1 ms 400 / 360 ACMVGES 20 VPtot per IGBT, Tcase = 25 C 1380 WT , (T ) 40 . . .+150 (125) Cj stgVisol AC, 1 min. 2 500 7) Vhumidity DIN 40 040 Class Fc

 0.914. Size:664K  semikron
skm200gal126d.pdf

M2 M2

 0.915. Size:684K  semikron
skm200gar125d.pdf

M2 M2

 0.916. Size:414K  semikron
skm200gal12e4.pdf

M2 M2

SKM200GAL12E4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 314 ATj = 175 CTc =80C 242 AICnom 200 AICRM ICRM = 3xICnom 600 AVGES -20 ... 20 VVCC = 800 VSEMITRANS3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CIGBT4 ModulesInverse diodeIF Tc =25C 229 ATj = 175 CSKM200GAL12E4Tc =80C 172

 0.917. Size:675K  semikron
skm200gal176d.pdf

M2 M2

 0.918. Size:720K  semikron
skm200gb174d.pdf

M2 M2

 0.919. Size:697K  semikron
skm200gar173d.pdf

M2 M2

 0.920. Size:675K  semikron
skm200gb173d.pdf

M2 M2

 0.921. Size:1149K  semikron
skim270gd176d.pdf

M2 M2

 0.922. Size:635K  semikron
skm200gal123d.pdf

M2 M2

 0.923. Size:379K  semikron
skm200gb12t4.pdf

M2 M2

SKM200GB12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 314 ATj = 175 CTc =80C 242 AICnom 200 AICRM ICRM = 3xICnom 600 AVGES -20 ... 20 VVCC = 800 VSEMITRANS3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 229 ATj = 175 CSKM200GB12T4Tc =80C

 0.924. Size:684K  semikron
skm200gb125d.pdf

M2 M2

 0.925. Size:675K  semikron
skm200gb176d.pdf

M2 M2

 0.926. Size:1667K  semikron
skm200ga123d.pdf

M2 M2

SEMITRANS MAbsolute Maximum Ratings ValuesIGBT ModulesSymbol Conditions 1) ... 123 D ... 123 D1 UnitsV 1200 VCESSKM 200 GA 123 D*)V R = 20 k 1200 VCGR GESKM 200 GB 123 DI T = 25/80 C 200 / 180 AC caseSKM 200 GB 123 D1 6)I Tcase = 25/80 C; tp = 1 ms 400 / 360 ACMSKM 200 GAL 123 D 6)VGES 20 VSKM 200 GAR 123 D 6)Ptot per IGBT, Tcase = 25 C 1380 W

 0.927. Size:975K  semikron
skim200gd126d.pdf

M2 M2

 0.928. Size:2047K  semikron
skm200gax173d skm200gay173d.pdf

M2 M2

SEMITRANS MAbsolute Maximum RatingsValuesIGBT ModulesSymbol Conditions 1)UnitsVCES 1700 VVCGR RGE = 20 k 1700 V SKM 200 GAX 173 D 6)IC Tcase = 25/80 C 220 / 150 ASKM 200 GAY 173 D 6)ICM Tcase = 25/80 C; tp = 1 ms 440 / 300 AVGES 20 VPtot per IGBT, Tcase = 25 C 1250 WTj, (Tstg) 40 ... +150 (125) CVisol AC, 1 min. 4000 Vhumidity DIN 40 040 Class F

 0.929. Size:623K  semikron
skm200gb063d.pdf

M2 M2

 0.930. Size:664K  semikron
skm200gb126d.pdf

M2 M2

 0.931. Size:635K  semikron
skm200gb123d.pdf

M2 M2

 0.932. Size:378K  semikron
skm200gm12t4.pdf

M2 M2

SKM200GM12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 314 ATj = 175 CTc =80C 242 AICnom 200 AICRM ICRM = 3xICnom 600 AVGES -20 ... 20 VVCC = 800 VSEMITRANS 3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 229 ATj = 175 CSKM200GM12T4Tc =80C

 0.933. Size:446K  semikron
skm200gb12v.pdf

M2 M2

SKM200GB12VAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 311 ATj = 175 CTc =80C 237 AICnom 200 AICRM ICRM = 3xICnom 600 AVGES -20 ... 20 VVCC = 720 VSEMITRANS 3tpsc VGE 20 V Tj =125C 10 sVCES 1200 VTj -40 ... 175 CInverse diodeIF Tc =25C 229 ATj = 175 CSKM200GB12VTc =80C 172 AIFnom

 0.934. Size:684K  semikron
skm200gal125d.pdf

M2 M2

 0.935. Size:43K  semitronics
sefm250.pdf

M2 M2

SEMITRONICS CORP. SEFM250 64 Commercial Street, Freeport, N.Y. 11520 N-Channel MOSFET Phone: (516) 623-9400 Fax. (516) 623-6954 FEATURES PACKAGE Isolated Case Hermetically Sealed Package Repetitive Avalanche Rating Dynamic dv/dt Rating Ceramic Eyelets MIL STX Screening Available APPLICATIONS High Reliability Power Supplies CASE

 0.936. Size:23K  shaanxi
wvm20n8.pdf

M2

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM20N8(MTM20N10) Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power

 0.937. Size:23K  shaanxi
wvm21n50.pdf

M2

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM21N50(IRF460)Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power s

 0.938. Size:23K  shaanxi
wvm28n10.pdf

M2

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM28N10(IRF140)Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power s

 0.939. Size:23K  shaanxi
mtm26n40e.pdf

M2

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM26N40(MTM26N40E) Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of pow

 0.940. Size:22K  shaanxi
wvm20n50.pdf

M2

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM20N50Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power source co

 0.941. Size:23K  shaanxi
wvm25n40.pdf

M2

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM25N(IRF360)Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power sou

 0.942. Size:310K  silicon standard
ssm2312gn.pdf

M2 M2

SSM2312GNN-channel Enhancement-mode Power MOSFETLow gate-charge BVDSS 20VDSimple drive requirement R 50mDS(ON)Fast switching ID 4.3AGPb-free; RoHS compliant.SDESCRIPTIONDThe SSM2312GN is in a SOT-23-3 package, which is widely used for lowerpower commercial and industrial surface mount applications. This device is Ssuitable for low-voltage applications such as DC

 0.943. Size:149K  silicon standard
ssm2306gn.pdf

M2 M2

SSM2306NN-CHANNEL ENHANCEMENT-MODE POWER MOSFETCapable of 2.5V gate-drive BVDSS 20VLower on-resistance RDS(ON) 32mDSurface-mount package ID 5.3ASSOT-23GDescriptionPower MOSFETs from Silicon Standard utilize advanced processing techniques toachieve the lowest possible on-resistance in an extremely efficient andDcost-effective device.The SOT-23 package is widely use

 0.944. Size:307K  silicon standard
ssm2309gn.pdf

M2 M2

SSM2309GNP-channel Enhancement-mode Power MOSFETLow gate-charge BVDSS -30VDSimple drive requirement R 75mDS(ON)Fast switching ID -3.7AGPb-free; RoHS compliant.SDESCRIPTIONDThe SSM2309GN is in a SOT-23-3 package, which is widely used for lowerpower commercial and industrial surface mount applications. It is well suitedSfor low voltage applications such as DC/DC c

 0.945. Size:313K  silicon standard
ssm2313gn.pdf

M2 M2

SSM2313GNP-channel Enhancement-mode Power MOSFETLow gate-charge BVDSS -20VDSimple drive requirement R 120mDS(ON)Fast switching ID -2.5AGPb-free; RoHS compliant.SDESCRIPTIONDThe SSM2313GN is in a SOT-23-3 package, which is widely used for lowerpower commercial and industrial surface mount applications. This device is Ssuitable for low-voltage applications such as

 0.946. Size:176K  silicon standard
ssm2307gn.pdf

M2 M2

SSM2307GNP-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY DBVDSS -16VSimple Drive Requirement RDS(ON) 60mSmall Package Outline Surface Mount Device ID - 4ASSOT-23GDESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. Dprovide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effec

 0.947. Size:251K  silicon standard
ssm2304agn.pdf

M2 M2

SSM2304AGNN-CHANNEL ENHANCEMENT-MODE POWER MOSFETSimple drive requirement BV 30VDSSDLower gate charge R 117mDS(ON)Fast switching characteristics ID 2.5ASSOT-23-3GDescriptionDAdvanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.GSThe SS

 0.948. Size:215K  silicon standard
ssm2603gy.pdf

M2 M2

SSM2603GYP-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY SBVDSS -20VSimple Drive Requirement DDRDS(ON) 65mSmall Package Outline Surface Mount Device GID -5.0ADSOT-26 DDESCRIPTION DAdvanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. GThe

 0.949. Size:207K  silicon standard
ssm2605gy.pdf

M2 M2

SSM2605GYP-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY SFast Switching Characteristic BVDSS -30VDLower Gate Charge D RDS(ON) 80mSmall Footprint & Low Profile Package G ID - 4ADSOT-26DDESCRIPTION Advanced Power MOSFETs utilized advanced processing techniques Dto achieve the lowest possible on-resistance, extremely efficient and ost-effectiveness d

 0.950. Size:140K  silicon standard
ssm2303gn.pdf

M2 M2

SSM2303NP-CHANNEL ENHANCEMENT-MODE POWER MOSFETSimple drive requirement BVDSS -30VSmall package outline RDS(ON) 240mDSurface-mount device ID - 1.7ASSOT-23GDescriptionDPower MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching, low on-resistance and cost-effectiveness. GSAbsolute Maximum RatingsSymbol Parameter Rating Un

 0.951. Size:744K  silicon standard
ssm25t03gh ssm25t03gj.pdf

M2 M2

SSM25T03GH,JN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM25T03 acheives fast switching performanceBVDSS 30Vwith low gate charge without a complex drive circuit. It isRDS(ON) 35msuitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 20AD The SSM25T03GH is in a TO-252 package, which isPb-free; RoHS

 0.952. Size:142K  silicon standard
ssm2302gn.pdf

M2 M2

SSM2302NN-CHANNEL ENHANCEMENT-MODE POWER MOSFETCapable of 2.5V gate drive BVDSS 20VSmall package outline RDS(ON) 85mDSurface-mount package ID 2.8ASSOT-23GDescriptionPower MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,Dlow on-resistance and cost-effectiveness.GSAbsolute Maximum RatingsSymbol Parameter Rating Uni

 0.953. Size:204K  silicon standard
ssm2602gy.pdf

M2 M2

SSM2602GYN-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY Capable of 2.5V gate drive BVDSS 20VSLower on-resistance DRDS(ON) 34mDSurface mount package ID 6.3ARoHS Compliant GDSOT-26 DDESCRIPTION Advanced Power MOSFETs utilized advanced processing techniques Dto achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness

 0.954. Size:313K  silicon standard
ssm2305gn.pdf

M2 M2

SSM2305GNP-channel Enhancement-mode Power MOSFETLow gate-charge BVDSS -20VDSimple drive requirement R 65mDS(ON)Fast switching ID -4.2AGPb-free; RoHS compliant.SDESCRIPTIONDThe SSM2305GN is in a SOT-23-3 package, which is widely used for lowerpower commercial and industrial surface mount applications. This device is Ssuitable for low-voltage applications such as

 0.955. Size:319K  silicon standard
ssm20p02gh ssm20p02gj.pdf

M2 M2

SSM20P02H,JP-CHANNEL ENHANCEMENT-MODEPOWER MOSFETSimple drive requirement D BVDSS -20V2.5V gate drive capability RDS(ON) 52m Fast switching ID -18AGSDescriptionPower MOSFETs from Silicon Standard provide theGDdesigner with the best combination of fast switching,STO-252(H)ruggedized device design, low on-resistance and cost-effectiveness.The TO-252 package is wi

 0.956. Size:169K  silicon standard
ssm2602y.pdf

M2 M2

SSM2602YN-CHANNEL ENHANCEMENT-MODE POWER MOSFETCapable of 2.5V gate drive BVDSS 20VSDLow on-resistance RDS(ON) 34mDSurface mount package ID 5.3AGDSOT-26DDescriptionThese Power MOSFETs from Silicon Standard utilize advanced processing techniques to achieve the lowest possible on-resistanceDin an extremely efficient and cost-effective device.The SOT-26 package

 0.957. Size:498K  silicon standard
ssm2316gn.pdf

M2 M2

SSM2316GNN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM2316GN acheives fast switching performanceBVDSS 30Vwith low gate charge without a complex drive circuit. ItRDS(ON) 42mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 4.7AD The SSM2316GN is supplied in an RoHS-compliantPb-free; RoHS-c

 0.958. Size:499K  silicon standard
ssm2310gn.pdf

M2 M2

SSM2310GNN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM2310GN acheives fast switching performanceBVDSS 60Vwith low gate charge without a complex drive circuit. ItRDS(ON) 90mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 3AD The SSM2310GN is supplied in an RoHS-compliantPb-free; RoHS-com

 0.959. Size:150K  silicon standard
ssm2301gn.pdf

M2 M2

SSM2301NP-CHANNEL ENHANCEMENT-MODE POWER MOSFETSimple drive requirement BV -20VDSSSmall package outline RDS(ON) 130mDSurface-mount device ID -2.3ASSOT-23GDescriptionDPower MOSFETs from Silicon Standard Corp. provide thedesigner with the best combination of fast switching, lowGon-resistance and cost-effectiveness.SThe SOT-23 package is widely preferred for co

 0.960. Size:717K  silicon standard
ssm20g45egh.pdf

M2 M2

SSM20G45EGH/JN-channel Insulated-Gate Bipolar TransistorPRODUCT SUMMARY DESCRIPTIONThe SSM20G45E acheives fast switching performanceV 450VCES with low gate charge without a complex drive circuit. It isVCE(sat) 5V typ.suitable for use in short-duration, high-current strobeapplications, such as still-camera flash. I 130ACP The SSM20G45EGH is in a TO-252 package, which is

 0.961. Size:321K  silicon standard
ssm20n03s.pdf

M2 M2

SSM20N03S,PN-CHANNEL ENHANCEMENT-MODEPOWER MOSFETDynamic dv/dt rating BVDSS 30VDRepetitive-avalanche rated RDS(ON) 52m Fast switching ID 20AGSimple drive requirementSDescriptionPower MOSFETs from Silicon Standard provide theGDdesigner with the best combination of fast switching,S TO-263ruggedized device design, low on-resistance and cost-effectiveness.The TO-

 0.962. Size:555K  silicon standard
ssm2030gm.pdf

M2 M2

SSM2030GMN- and P-channel Enhancement-mode Power MOSFETsN-CH BVDSS 20VSimple drive requirement D2D2D2 RDS(ON) 30mLower gate charge D1D1D1D1ID 6AFast switching characteristicsG2G2P-CH BVDSS -20VPb-free; RoHS compliant. S2S2 G1SO-8 S1G1RDS(ON) 50mS1 DESCRIPTIONID -5AAdvanced Power MOSFETs from Silicon Standard provide theD2D1designer wit

 0.963. Size:164K  silicon standard
ssm2761p-a.pdf

M2 M2

SSM2761P-AN-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY DBVDSS 650VLower On-resistance Fast Switching Characteristic RDS(ON) 1Simple Drive Requirement ID 10AGRoHS Compliant SDESCRIPTION The TO-220 package is universally preferred for all commercial- industrial applications. The device is suited for DC-DC ,AC-DC converters for power applications. G

 0.964. Size:311K  silicon standard
ssm2314gn.pdf

M2 M2

SSM2314GNN-channel Enhancement-mode Power MOSFETLow gate-charge BVDSS 20VDSimple drive requirement R 75mDS(ON)Fast switching ID 3.5AGPb-free; RoHS compliant.SDESCRIPTIONDThe SSM2314GN is in a SOT-23-3 package, which is widely used for lowerpower commercial and industrial surface mount applications. This device is Ssuitable for low-voltage applications such as DC

 0.965. Size:497K  silicon standard
ssm2318gen.pdf

M2 M2

SSM2318GENN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM2318GEN acheives fast switching performanceBVDSS 30Vwith low gate charge without a complex drive circuit. ItRDS(ON) 720mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 1AD The SSM2318GEN is supplied in an RoHS-compliantPb-free; RoHS

 0.966. Size:143K  silicon standard
ssm2304gn.pdf

M2 M2

SSM2304NN-CHANNEL ENHANCEMENT-MODE POWER MOSFETSimple drive requirement BV 25VDSSSmall package outline R 117mDDS(ON)Surface-mount package I 2.5ADSSOT-23GDescriptionPower MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching, low on-resistance and cost-effectiveness.DGSAbsolute Maximum RatingsSymbol Parameter Rati

 0.967. Size:717K  silicon standard
ssm20g45egj.pdf

M2 M2

SSM20G45EGH/JN-channel Insulated-Gate Bipolar TransistorPRODUCT SUMMARY DESCRIPTIONThe SSM20G45E acheives fast switching performanceV 450VCES with low gate charge without a complex drive circuit. It isVCE(sat) 5V typ.suitable for use in short-duration, high-current strobeapplications, such as still-camera flash. I 130ACP The SSM20G45EGH is in a TO-252 package, which is

 0.968. Size:466K  silicon standard
ssm2030sd.pdf

M2 M2

SSM2030SDN AND P-CHANNELENHANCEMENT-MODE POWER MOSFETSSimple drive requirement D2 N-ch BV 20VDSSD2D1Low on-resistance R 60mDS(ON)D1Fast switching I 2.6ADP-ch BVDSS -20VG2S2PDIP-8G1 RDS(ON) 80mS1Description ID -2.3APower MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,VinVoutruggedized device design,

 0.969. Size:152K  silicon standard
ssm2603y.pdf

M2 M2

SSM2603YP-CHANNEL ENHANCEMENT-MODE POWER MOSFETSimple drive requirement BVDSS -20VSDSmall package outline R 65mDS(ON)DSurface-mount device ID - 4.2AGDSOT-26DDescriptionDThese power MOSFETs from Silicon Standard utilize advanced processing techniques to achieve the lowest possible on-resistancein an extremely efficient and cost-effective device.GThe SOT-2

 0.970. Size:242K  silicon standard
ssm28g45em.pdf

M2 M2

SSM28G45EMN-CHANNEL INSULATED-GATE BIPOLAR TRANSISTORHigh input impedance VCE 450VCHigh peak current capability ICP 130ACCC3.3V gate driveCGGEESO-8EEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCECollector-Emitter Voltage 450 VVGEGate-Emitter Voltage 6 VVGEPPulsed Gate-Emitter Voltage 8 VICPPulsed Collector Current 130 APD @ T

 0.971. Size:312K  silicon standard
ssm2305agn.pdf

M2 M2

SSM2305AGNP-channel Enhancement-mode Power MOSFETLow gate-charge BVDSS -30VDSimple drive requirement R 80mDS(ON)Fast switching ID -3.2AGPb-free; RoHS compliant.SDESCRIPTIONDThe SSM2305AGN is in a SOT-23-3 package, which is widely used for lowerpower commercial and industrial surface mount applications. This device is Ssuitable for low-voltage applications such a

 0.972. Size:674K  slkor
wpm2341.pdf

M2 M2

WPM2341P-channel Enhancement Mode Power MOSFETFEATURESPWM applicationsLoad switchPower managementMAXIMUM RATINGS (TA=25 unless otherwise noted)Symbol Parameter Value UnitsVDS Drain-Source voltage -20 VVGS Gate-Source voltage 12 VID Drain current -3 APD Power Dissipation 1 WTj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERIST

 0.973. Size:431K  slkor
wnm2021.pdf

M2 M2

WNM2021SOT-323 Plastic-Encapsulate MOSFETSW NM2021 N-Channel MOSFET IDV(BR)DSS RDS(on)MAX SOT-323 58m@4.5V20 V 2.3A@2.5V86m1. GATE 2. SOURCE 3. DRAIN APPLICATION FEATURE Load Switch for Portable Devices TrenchFET Power MOSFET DC/DC Converter Equivalent Circuit MARKING Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value

 0.974. Size:169K  stansontech
st3401m23rg.pdf

M2 M2

ST3401M23RG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401M23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phon

 0.975. Size:346K  ubiq
qm2409g.pdf

M2 M2

QM2409G P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2409G is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 75m -3.7Afor most of the small power switching and load switch applications. Applications The QM2409G meet the RoHS and Green Product req

 0.976. Size:353K  ubiq
qm2402c1.pdf

M2 M2

QM2402C1 N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2402C1 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 30m 2.7Afor most of the small power switching and load switch applications. Applications The QM2402C1 meet the RoHS and Green Product req

 0.977. Size:321K  ubiq
qm2401k.pdf

M2 M2

QM2401K P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2401K is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 60m -3.4Afor most of the synchronous buck converter applications . Applications The QM2401K meet the RoHS and Green Product requirement ,

 0.978. Size:357K  ubiq
qm2416c1.pdf

M2 M2

QM2416C1 N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2416C1 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 65m 1.8Afor most of the small power switching and load switch applications. Applications The QM2416C1 meet the RoHS and Green Product req

 0.979. Size:352K  ubiq
qm2404c1.pdf

M2 M2

QM2404C1 N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2404C1 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 33m 2.6Afor most of the small power switching and load switch applications. Applications The QM2404C1 meet the RoHS and Green Product req

 0.980. Size:417K  ubiq
qm2605s.pdf

M2 M2

QM2605S N-Ch and P-Ch Fast Switching MOSFETsGeneral Description Product SummeryThe QM2605S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 42m 4.6Acharge for most of the small power switching and -20V 130m -2.8Aload switch applications. The QM2605S meet the RoHS and Gr

 0.981. Size:357K  ubiq
qm2409j.pdf

M2 M2

QM2409J P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2409J is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 75m -3.7Afor most of the small power switching and load switch applications. Applications The QM2409J meet the RoHS and Green Product req

 0.982. Size:348K  ubiq
qm2416y1.pdf

M2 M2

QM2416Y1 N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2416Y1 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 65m 1.8Afor most of the small power switching and load switch applications. Applications The QM2416Y1 meet the RoHS and Green Product req

 0.983. Size:324K  ubiq
qm2423k.pdf

M2 M2

QM2423K P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2423K is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 40m -4.2Afor most of the small power switching and load switch applications. Applications The QM2423K meet the RoHS and Green Product requ

 0.984. Size:335K  ubiq
qm2518c1.pdf

M2 M2

QM2518C1 Dual N-Ch 20V Fast Switching MOSFETs General Description Product SummeryThe QM2518C1 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 90m 1.52Afor most of the small power switching and load switch applications. Applications The QM2518C1 meet the RoHS and Green Prod

 0.985. Size:247K  ubiq
qm2416j.pdf

M2 M2

QM2416J N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2416J is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 48m 4.3Afor most of the small power switching and load switch applications. Applications The QM2416J meet the RoHS and Green Product requir

 0.986. Size:324K  ubiq
qm2409k.pdf

M2 M2

QM2409K P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2409K is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 75m -3.1Afor most of the small power switching and load switch applications. Applications The QM2409K meet the RoHS and Green Product req

 0.987. Size:345K  ubiq
qm2507w.pdf

M2 M2

QM2507W Dual P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2507W is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 80m -3.2Afor most of the small power switching and load switch applications. Applications The QM2507W meet the RoHS and Green Product

 0.988. Size:323K  ubiq
qm2415sn8.pdf

M2 M2

QM2415SN8 P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2415SN8 is the highest performance trench P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate -20V 130m -2.5Acharge for most of the small power switching and load switch applications. Applications The QM2415SN8 meet the RoHS and Green Produ

 0.989. Size:335K  ubiq
qm2418c1.pdf

M2 M2

QM2418C1 N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2418C1 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 90m 1.52Afor most of the small power switching and load switch applications. Applications The QM2418C1 meet the RoHS and Green Product re

 0.990. Size:365K  ubiq
qm2409v.pdf

M2 M2

QM2409V P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2409V is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 75m -3.3Afor most of the small power switching and load switch applications. Applications The QM2409V meet the RoHS and Green Product req

 0.991. Size:320K  ubiq
qm2421k.pdf

M2 M2

QM2421K P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2421K is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 43m -4Afor most of the small power switching and load switch applications. Applications The QM2421K meet the RoHS and Green Product requi

 0.992. Size:337K  ubiq
qm2502s.pdf

M2 M2

QM2502S Dual N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2502S is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 18.5m 7Afor most of the small power switching and load switch applications. Applications The QM2502S meet the RoHS and Green Product r

 0.993. Size:412K  ubiq
qm2605v.pdf

M2 M2

QM2605V N-Ch and P-Ch Fast Switching MOSFETsGeneral Description Product SummeryThe QM2605V is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 48m 3.8Acharge for most of the small power switching and -20V 130m -2.5Aload switch applications. The QM2605V meet the RoHS and Gr

 0.994. Size:314K  ubiq
qm2407k.pdf

M2 M2

QM2407K P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2407K is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 32m -4.7Afor most of the small power switching and load switch applications. Applications The QM2407K meet the RoHS and Green Product req

 0.995. Size:355K  ubiq
qm2429s.pdf

M2 M2

QM2429S P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2429S is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 15m -8.5Afor most of the small power switching and load switch applications. Applications The QM2429S meet the RoHS and Green Product req

 0.996. Size:355K  ubiq
qm2414v.pdf

M2 M2

QM2414V N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2414V is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 50m 3.8Afor most of the small power switching and load switch applications. Applications The QM2414V meet the RoHS and Green Product requir

 0.997. Size:351K  ubiq
qm2404j.pdf

M2 M2

QM2404J N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2404J is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 28m 5.8Afor most of the small power switching and load switch applications. Applications The QM2404J meet the RoHS and Green Product requir

 0.998. Size:323K  ubiq
qm2401d.pdf

M2 M2

QM2401D P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2401D is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 52m -18.4Afor most of the synchronous buck converter applications . Applications The QM2401D meet the RoHS and Green Product requirement ,

 0.999. Size:340K  ubiq
qm2410j.pdf

M2 M2

QM2410J N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2410J is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 37m 5.1Afor most of the small power switching and load switch applications. Applications The QM2410J meet the RoHS and Green Product requi

 0.1000. Size:312K  ubiq
qm2413k.pdf

M2 M2

QM2413K P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2413K is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 155m -2.2Afor most of the small power switching and load switch applications. Applications The QM2413K meet the RoHS and Green Product req

 0.1001. Size:303K  ubiq
qm2410k.pdf

M2 M2

QM2410K N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2410K is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 37m 4.2Afor most of the small power switching and load switch applications. Applications The QM2410K meet the RoHS and Green Product requir

 0.1002. Size:315K  ubiq
qm2404k.pdf

M2 M2

QM2404K N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2404K is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 28m 4.8Afor most of the small power switching and load switch applications. Applications The QM2404K meet the RoHS and Green Product requir

 0.1003. Size:337K  ubiq
qm2410d.pdf

M2 M2

QM2410D N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2410D is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 25m 22Afor most of the small power switching and load switch applications. Applications The QM2410D meet the RoHS and Green Product require

 0.1004. Size:365K  ubiq
qm2401v.pdf

M2 M2

QM2401V P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2401V is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 60m -3.6Afor most of the small power switching and load switch applications. Applications The QM2401V meet the RoHS and Green Product requ

 0.1005. Size:349K  ubiq
qm2411j.pdf

M2 M2

QM2411J P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2411J is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 80m -3.6Afor most of the small power switching and load switch applications. Applications The QM2411J meet the RoHS and Green Product req

 0.1006. Size:353K  ubiq
qm2413v.pdf

M2 M2

QM2413V P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2413V is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 155m -2.3Afor most of the small power switching and load switch applications. Applications The QM2413V meet the RoHS and Green Product req

 0.1007. Size:409K  ubiq
qm2601s.pdf

M2 M2

QM2601S N-Ch and P-Ch Fast Switching MOSFETsGeneral Description Product SummeryThe QM2601S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 18m 7.2Acharge for most of the small power switching and -20V 50m -4.5Aload switch applications. The QM2601S meet the RoHS and Gree

 0.1008. Size:355K  ubiq
qm2403v.pdf

M2 M2

QM2403V P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2403V is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 55m -3.8Afor most of the small power switching and load switch applications. Applications The QM2403V meet the RoHS and Green Product requ

 0.1009. Size:413K  ubiq
qm2602s.pdf

M2 M2

QM2602S N-Ch and P-Ch Fast Switching MOSFETsGeneral Description Product SummeryThe QM2602S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 16m 7.7 Acharge for most of the small power switching and -20V 50m -4.6 A load switch applications. The QM2602S meet the RoHS and G

 0.1010. Size:311K  ubiq
qm2411k.pdf

M2 M2

QM2411K P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2411K is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 80m -3Afor most of the small power switching and load switch applications. Applications The QM2411K meet the RoHS and Green Product requir

 0.1011. Size:319K  ubiq
qm2421m3.pdf

M2 M2

QM2421M3 P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2421M3 is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 32m -24Afor most of the small power switching and load switch applications. Applications The QM2421M3 meet the RoHS and Green Product r

 0.1012. Size:338K  ubiq
qm2411g.pdf

M2 M2

QM2411G P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2411G is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 80m -3.6Afor most of the small power switching and load switch applications. Applications The QM2411G meet the RoHS and Green Product req

 0.1013. Size:345K  ubiq
qm2502w.pdf

M2 M2

QM2502W Dual N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2502W is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 22m 5.8Afor most of the small power switching and load switch applications. Applications The QM2502W meet the RoHS and Green Product r

 0.1014. Size:310K  ubiq
qm2402k.pdf

M2 M2

QM2402K N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2402K is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 28m 4.8Afor most of the small power switching and load switch applications. Applications The QM2402K meet the RoHS and Green Product requi

 0.1015. Size:349K  ubiq
qm2710d.pdf

M2 M2

QM2710D N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2710D is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 28m 22Afor most of the small power switching and load switch applications. Applications The QM2710D meet the RoHS and Green Product require

 0.1016. Size:312K  ubiq
qm2520c1.pdf

M2 M2

QM2520C1 Dual N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2520C1 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 115m 1.4 Afor most of the small power switching and load switch applications. Applications The QM2520C1 meet the RoHS and Green Pro

 0.1017. Size:349K  ubiq
qm2417c1.pdf

M2 M2

QM2417C1 P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2417C1 is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 240m -1Afor most of the small power switching and load switch applications. Applications The QM2417C1 meet the RoHS and Green Product re

 0.1018. Size:359K  ubiq
qm2401c1.pdf

M2 M2

QM2401C1 P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2401C1 is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 65m -1.9Afor most of the small power switching and load switch applications. Applications The QM2401C1 meet the RoHS and Green Product r

 0.1019. Size:326K  ubiq
qm2427s.pdf

M2 M2

QM2427S P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2427S is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 9m -10.7Afor most of the synchronous buck converter applications . Applications The QM2427S meet the RoHS and Green Product requirement wi

 0.1020. Size:316K  ubiq
qm2404d.pdf

M2 M2

QM2404D N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2404D is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 20m 28Afor most of the small power switching and load switch applications. Applications The QM2404D meet the RoHS and Green Product require

 0.1021. Size:352K  ubiq
qm2403j.pdf

M2 M2

QM2403J P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2403J is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 55m -4.3Afor most of the small power switching and load switch applications. Applications The QM2403J meet the RoHS and Green Product requ

 0.1022. Size:359K  ubiq
qm2401j.pdf

M2 M2

QM2401J P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2401J is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 60m -4.2Afor most of the small power switching and load switch applications. Applications The QM2401J meet the RoHS and Green Product requ

 0.1023. Size:410K  ubiq
qm2604v.pdf

M2 M2

QM2604V N-Ch and P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2604V is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 50m 3.8Acharge for most of the small power switching and -20V 155 m -2.3Aload switch applications. The QM2604V meet the RoHS an

 0.1024. Size:327K  ubiq
qm2415sm8.pdf

M2 M2

QM2415SM8 P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2415SM8 is the highest performance trench P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate -20V 130m -3.3Acharge for most of the small power switching and load switch applications. Applications The QM2415SM8 meet the RoHS and Green Produ

 0.1025. Size:344K  ubiq
qm2417y1.pdf

M2 M2

QM2417Y1 P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2417Y1 is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 240m -1Afor most of the small power switching and load switch applications. Applications The QM2417Y1 meet the RoHS and Green Product re

 0.1026. Size:348K  ubiq
qm2402j.pdf

M2 M2

QM2402J N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2402J is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 25m 5.8Afor most of the small power switching and load switch applications. Applications The QM2402J meet the RoHS and Green Product requir

 0.1027. Size:324K  ubiq
qm2411sn8.pdf

M2 M2

QM2411SN8 P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2411SN8 is the highest performance trench P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate -20V 80m -3.2Acharge for most of the small power switching and load switch applications. Applications The QM2411SN8 meet the RoHS and Green Produc

 0.1028. Size:309K  ubiq
qm2419k.pdf

M2 M2

QM2419K P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2419K is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 205m -2.3Afor most of the small power switching and load switch applications. Applications The QM2419K meet the RoHS and Green Product req

 0.1029. Size:329K  ubiq
qm2418y1.pdf

M2