MITSUBISHI IGBT MODULESCM200DY-24HHIGH POWER SWITCHING USEINSULATED TYPEABF F GPC2E1 E2 C1JC DPDescription:KMitsubishi IGBT Modules are de-RQ - M6 THDN - DIA. signed for use in switching applica-(3 TYP.)(4 TYP.)tions. Each module consists of twoTAB#110 t=0.5IGBTs in a half-bridge configurationMLwith each transistor having a re-Mverse-conne

DMP22M2UPS Green20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package Cooler Running Applications BVDSS RDS(ON) max TC = +25C High Conversion Efficiency Low RDS(ON) Minimizes On State Losses 2.5m @ VGS = -10V -60A -20V

MITSUBISHI HVIGBT MODULESCM200HG-130HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM200HG-130H IC ..................................................................200 A VCES ...................................................... 6500 V High Insulated Type 1-element in a Pack AISiC Baseplate

BM2300 N Channel Enhancement Mode MOSFET 4A DESCRIPTION The BM2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook

PM25CL1A120Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Intellimod L1-Series www.pwrx.comThree Phase IGBT Inverter 25 Amperes/1200 VoltsP ATERMINALE DCODEF G1 VUPC2 UFO3 UPH J J J4 VUP1K K 5 VVPCK K6 VFOF7 VP8 VVP1L 9 VWPCM10 WFOY N11 WPB 12 VWP11 5 9 1913 VNCY P14 VN1W15 NCB U V W 16 UN

CM200DU-24FPowerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignDual IGBTMOD200 Amperes/1200 VoltsAT - (4 TYP.)DTC MEASURED POINTU (4 PLACES)G2HE2CJB E LCMC2E1 E2 C1E1HG1Description:GPowerex IGBTMOD Modules Q Q P NS - NUTS are designed for use in switching (3 TYP)applications. Each m

CM200DY-28HPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Dual IGBTMODH-Series Module200 Amperes/1400 VoltsABF F GPC2E1 E2 C1JC DPDescription:KPowerex IGBTMOD ModulesRQ - M6 THDN - DIA.are designed for use in switching(3 TYP.)(4 TYP.)applications. Each module consists.110 TABM of two IGBT Transistors in a

MITSUBISHI IGBT MODULESCM20MD-12HMEDIUM POWER SWITCHING USEINSULATED TYPECM20MD-12HIC ..................................................................... 20AVCES ............................................................600VInsulated TypeCIB Module3 Inverter+3 Converter+BrakeUL RecognizedYellow Card No. E80276 (N)File No. E80271APPLICATIONAC & DC mo

CM2500DY-24SPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual Half-Bridge www.pwrx.comIGBT HVIGBT Series Module2500 Amperes/1200 VoltsAAN ASAPAQ H (12 PLACES)XARG YE2 G2 C2F J (18 PLACES)FPLSE2 E2 LC2E1D VC BC2E1C1 C1AALLKQ AVK K TE FW ABF G1 E1 C1P URAWFATAU ADNM (8 PLACES)AC

PD - 97441IRF6723M2DTRPbFIRF6723M2DTR1PbFApplicationsl Dual Common Drain Control MOSFETs forDirectFET Power MOSFET Multiphase DC-DC Converters Typical values (unless otherwise specified)FeaturesVDSS VGS RDS(on) RDS(on) l Replaces Two Discrete MOSFETs30V max 20V max 5.2m@ 10V 8.6m@ 4.5Vl Optimized for High Frequency Switchingl Low Profile (

HM25P06DP-Channel Enhancement Mode Power MOSFET Description The HM25P06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-25A RDS(ON)

CM2400HC-34N HIGH POWER SWITHCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM2400HC-34N I 2400 A C V 1700 V CES

MITSUBISHI HVIGBT MODULESCM2400HC-34HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM2400HC-34H IC ................................................................ 2400A VCES ....................................................... 1700V Insulated Type 1-element in a Pack AISiC Baseplate Soft Reverse Recover

CM200DU-12NFHPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBTwww.pwrx.comNFH-Series Module200 Amperes/600 VoltsTC MEASUREMENT POINTAN DM K KFEC2E1 E2 C1SB H GFRJP - NUTS (3 TYP) UQ - (2 TYP)Description:Powerex IGBT Modules are de-signed for use in high frequency applications; 30 kHz W W W Wfor hard switchi

JSM2622N-Channel Enhancement Mode Power MOSFET N-Channel Enhancement Mode Power MOSFET DDescription The JSM2622 uses advanced trench technology to Gprovide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. SGeneral Features Schematic diagram VDS = 20V,ID = 50A RDS(ON) Typ =4.5m@ VGS=10V 18RDS(ON) =5.0m@ VGS=4.5V Typ

MITSUBISHI IGBT MODULESCM200DU-24NFHHIGH POWER SWITCHING USECM200DU-24NFHIC ...................................................................200AVCES ......................................................... 1200VInsulated Type2-elements in a packAPPLICATIONHigh frequency switching use (30kHz to 60kHz).Gradient amplifier, Induction heating, power supply, etc.OUTL

N-Channel Enhancement Mode Power MOSFET DDescription The JSM2050 uses advanced trench technology to Gprovide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. SGeneral Features Schematic diagram VDS = 20V,ID = 50A RDS(ON)

MITSUBISHI IGBT MODULESCM25MD-24HMEDIUM POWER SWITCHING USEINSULATED TYPECM25MD-24HIC ..................................................................... 25AVCES ......................................................... 1200VInsulated TypeCIB Module3 Inverter+3 Converter+BrakeUL RecognizedYellow Card No. E80276 (N)File No. E80271APPLICATIONAC & DC mot

CM2400HCB-34N HIGH POWER SWITHCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM2400HCB-34N IC 2400 A VCES

CM200RL-12NFPowerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Six IGBTMOD + BrakeNF-Series Module200 Amperes/600 VoltsADE F H H EG G G MKNLW V UEVABCNB GBX1 8CNGACXJWP VP UPP GDescription:WP1 1 1Powerex IGBTMOD Modules Eare designed for use in switching R S S Kapplications. Each m

BSM 200 GAR 120 DN2IGBT Power Module Single switch with chopper diode at collector Chopper diode like diode of BSM300GA120DN2 Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 200 GAR 120 DN2 1200V 290A HB 200GAR C67070-A2301-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE =

MITSUBISHI IGBT MODULESCM200E3U-24FHIGH POWER SWITCHING USECM200E3U-24FIC ...................................................................200AVCES ......................................................... 1200VInsulated Type1-element in a packAPPLICATIONBrakeOUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm10893 0.25414 14 14Tc measured pointCMC2

PD - 97540IRF6702M2DTRPbFIRF6702M2DTR1PbFApplicationsl Dual Common Drain Control MOSFETs forDirectFET Power MOSFET Multiphase DC-DC Converters Typical values (unless otherwise specified)FeaturesVDSS VGS RDS(on) RDS(on) l Replaces Two discrete high side MOSFETs30V max 20V max 5.2m@ 10V 8.6m@ 4.5Vl Optimized for High Frequency Switchingl Low Profile (

CM200DY-24APowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBTMODwww.pwrx.comA-Series Module200 Amperes/1200 VoltsAF FE EG2E2 GBJN HC2E1 E2 C1 E1G1 GK K KM NUTS Description:LD(3 PLACES)(2 PLACES)Powerex IGBTMOD Modules are designed for use in switching T THICKP P Papplications. Each module Q Q U W

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MHPM2A400A60M/DMHPM2A400A60MPreliminary Data SheetHybrid Power ModuleHigh Current IGBT Module400 AMP, 600 VOLT HYBRID POWER MODULE 400 Amp, 600 Volt IGBT HalfBridge Low OnVoltage, High Speed IGBTs Excellent Short Circuit Capability Fast Soft Recovery Diodes Low Inductance PackageM6 bolts

PD - 91252AREPETITIVE AVALANCHE AND dv/dt RATED IRHM2C50SEIRHM7C50SEHEXFET TRANSISTORN-CHANNELSINGLE EVENT EFFECT (SEE) RAD HARDProduct Summary600Volt, 0.6, (SEE) RAD HARD HEXFETPart Number BVDSS RDS(on) IDInternational Rectifiers (SEE) RAD HARD technologyIRHM2C50SE 600V 0.60 10.4AHEXFETs demonstrate immunity to SEE failure. Ad-ditionally,

PD - 97648AUIRL7766M2TRAUTOMOTIVE GRADEAUIRL7766M2TR1 Automotive DirectFET Power MOSFET V(BR)DSS100V Advanced Process Technology Optimized for Automotive DC-DC andRDS(on) typ.8.0mother Heavy Load Applicationsmax. Logic Level Gate Drive 10m Exceptionally Small Footprint and Low ProfileID (Silicon Limited)51A High Power DensityQg 44nC

PD - 91388CIRFM260POWER MOSFET 200V, N-CHANNELTHRU-HOLE (TO-254AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) IDIRFM260 0.060 35A*HEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry design achieves very low on-state resistance combined with high transconductance. TO-254

AUTOMOTIVE GRADE AUIRF8736M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 1.3m other Heavy Load Applications max. 1.9m Exceptionally Small Footprint and Low Profile High Power Density ID (Silicon Limited) 137A Low Parasitic Paramete

PD - 90555DIRFM240JANTX2N7219JANTXV2N7219POWER MOSFETREF:MIL-PRF-19500/596THRU-HOLE (TO-254AA) 200V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFM240 0.18 18AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-si

PD - 90554EIRFM250JANTX2N7225JANTXV2N7225POWER MOSFETREF:MIL-PRF-19500/592THRU-HOLE (TO-254AA) 200V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFM250 0.100 27.4AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-

PD - 97656AUTOMOTIVE GRADEAUIRL7736M2TRAUIRL7736M2TR1DirectFET Power MOSFET Logic LevelV(BR)DSS40V Advanced Process Technology Optimized for Automotive DC-DC, Motor Drive andRDS(on) typ.2.2m other Heavy Load Applicationsmax. 3.0m Exceptionally Small Footprint and Low Profile High Power DensityID (Silicon Limited)112A Low Parasitic

PD - 96317BAUIRF7648M2TRAUTOMOTIVE GRADEAUIRF7648M2TR1 Automotive DirectFET Power MOSFET V(BR)DSS60V Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC andRDS(on) typ.5.5mother Heavy Load Applicationsmax. 7.0m Exceptionally Small Footprint and Low Profile High Power DensityID (Silicon Limited)68A Low Parasitic Para

PD -97552AUIRF7675M2TRAUTOMOTIVE GRADEAUIRF7675M2TR1DirectFET Power MOSFET Advanced Process TechnologyV(BR)DSS Optimized for Class D Audio Amplifier Applications 150V Low Rds(on) for Improved EfficiencyRDS(on) typ.47m Low Qg for Better THD and Improved Efficiencymax. 56m Low Qrr for Better THD and Lower EMIRG (typical)1.2 Low Parasitic In

PD - 96316BAUIRF7736M2TRAUTOMOTIVE GRADEAUIRF7736M2TR1 Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS40V Optimized for Automotive Motor Drive, DC-DC andRDS(on) typ.2.5mother Heavy Load Applications Exceptionally Small Footprint and Low Profile max. 3.0m High Power DensityID (Silicon Limited)108A Low Parasitic Param

AUTOMOTIVE GRADE AUIRF8736M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 1.3m other Heavy Load Applications max. 1.9m Exceptionally Small Footprint and Low Profile High Power Density ID (Silicon Limited) 137A Low Parasitic Paramete

StrongIRFET IRF60DM206 DirectFET N-Channel Power MOSFET Application Brushed motor drive applications VDSS 60V BLDC motor drive applications RDS(on) typ. Battery powered circuits 2.2m Half-bridge and full-bridge topologies max 2.9m Synchronous rectifier applications Resonant mode power supplies ID 130A

PHM21NQ15TTrenchMOS standard level FETRev. 02 11 September 2003 Product dataM3D8791. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features SOT96 (SO8) footprint compatible Low thermal resistance Surface mounted package Low profile.1.3 Applications DC-to-DC primary side Portab

BUK1M200-50SGTDQuad channel logic level TOPFETRev. 01 31 March 2003 Product data1. Product profile1.1 DescriptionQuad temperature and overload protected power switch based on TOPFET Trenchtechnology in a 20-pin surface mount plastic package.Product availability:BUK1M200-50SGTD in SOT163-1 (SO20).1.2 Features Power TrenchMOS 5V logic compatible Overtemperature pro

PHM25NQ10TTrenchMOS standard level FETRev. 03 11 September 2003 Product dataM3D8791. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features SOT96 (SO-8) footprint compatible Low thermal resistance Surface mounted package Low profile.1.3 Applications DC-to-DC primary side Porta

BUK1M200-50SDLDQuad channel TOPFETRev. 01 02 April 2003 Product data1. Product profile1.1 DescriptionQuad temperature and overload protected logic level power MOSFET in TOPFETtechnology in a 20-pin surface mount plastic package.Product availability:BUK1M200-50SDLD in SOT163-1 (SO20).1.2 Features Power TrenchMOS 5 V logic compatible input level Overtemperature

STU9HN65M2 N-channel 600 V, 0.71 typ., 5.5 A MDmesh M2 Power MOSFET in an IPAK package Datasheet - production data Features Order code V R max. I DS DS(on) DTABSTU9HN65M2 600 V 0.82 5.5 A Extremely low gate charge 32 Excellent output capacitance (COSS) profile 1 100% avalanche tested Zener-protected IPAKApplications Switching applic

STB37N60DM2AG Automotive-grade N-channel 600 V, 0.094 typ., 28 A MDmesh DM2 Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT TABSTB37N60DM2AG 600 V 0.110 28 A 210 W Designed for automotive applications and 3 AEC-Q101 qualified 1 Fast-recovery body diode Extremely low gate charge and input capa

STL16N65M2N-channel 650 V, 0.325 typ., 7.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - production dataFeaturesOrder code VDS @ TJmax RDS(on) max IDSTL16N65M2 710 V 0.395 7.5 A Extremely low gate charge1 Excellent output capacitance (Coss) profile 234 100% avalanche tested Zener-protectedPowerFLAT 5x6 HVApplications

STD7N65M2N-channel 650 V, 0.98 typ., 5 A MDmesh M2 Power MOSFET in a DPAK packageDatasheet - production dataFeaturesRDS(on) Order code VDS max IDTABSTD7N65M2 650 V 1.15 5 A3 Extremely low gate charge1 Excellent output capacitance (Coss) profile 100% avalanche testedDPAK Zener-protectedApplications Switching applicationsFigure 1. Inte

STF26N65DM2DatasheetN-channel 650 V, 0.156 typ., 20 A, MDmesh DM2 Power MOSFET in a TO-220FP packageFeaturesVDS RDS(on) max. ID PTOTOrder codeSTF26N65DM2 650 V 0.190 20 A 30 W Fast-recovery body diode Extremely low gate charge and input capacitance321 Low on-resistance 100% avalanche testedTO-220FP Extremely high dv/dt ruggednessD(2)

STL13N65M2N-channel 650 V, 0.365 typ., 6.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTL13N65M2 650 V 0.475 6.5 A Extremely low gate charge Excellent output capacitance (COSS) profile 123 100% avalanche tested4 Zener-protectedPowerFLAT 5x6 HVApplications S

STL10N60M2N-channel 600 V, 0.580 typ., 5.5 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - production dataFeaturesVDS @ Order codeTJmax RDS(on) max IDSTL10N60M2 650 V 0.660 5.5 A Extremely low gate charge123 Lower RDS(on) x area vs previous generation4 Low gate input resistancePowerFLAT 5x6 HV 100% aval

STF9HN65M2 N-channel 600 V, 0.71 typ., 5.5 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I DS DS(on) DSTF9HN65M2 600 V 0.82 5.5 A Extremely low gate charge Excellent output capacitance (COSS) profile 3 100% avalanche tested 2 Zener-protected 1Applications TO-220FP Switching appli

STP12N60M2 N-channel 600 V, 0.395 typ., 9 A MDmesh M2 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTP12N60M2 600 V 0.450 9 A 85 W Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected Applications Switching applications F

STW56N65DM2 N-channel 650 V, 0.058 typ., 48 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features R DS(on)Order code V I P DS D TOTmax. STW56N65DM2 650 V 0.065 48 A 360 W Fast-recovery body diode 3 Extremely low gate charge and input 2capacitance 1 Low on-resistance 100% avalanche tested TO-247 Extre

STP7N65M2, STU7N65M2 N-channel 650 V, 0.98 typ., 5 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packages Datasheet - production data Features TABR DS(on)Order code VDS ID max STP7N65M2 650 V 1.15 5 A 32 STU7N65M2 650 V 1.15 5 A TAB1TO-220 Extremely low gate charge 32 Excellent output capacitance (Coss) profile IPAK 1 100% avalanche

STP26N60M2, STW26N60M2 N-channel 600 V, 0.14 typ., 20 A MDmesh M2 Power MOSFETs in TO-220 and TO-247 packages Datasheet - production data Features TABV @ R DS DS(on)Order code I P D TOTT max. JmaxSTP26N60M2 650 V 0.165 20 A 169 W STW26N60M2 33221 Extremely low gate charge 1 Excellent output capacitance (C ) profile OSS 100% avala

STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in DPAK, DPAK, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABTABRDS(on) 3 Order codes VDS @ TJmax max ID131DPAKSTB10N60M2D 2 PAKSTD10N60M2650 V 0.600 7.5 ASTP10N60M2TABTABSTU10N60M23 Extremely low gate ch

BUH2M20APHIGH VOLTAGE NPN SILICONPOWER TRANSISTOR EXTRA HIGH VOLTAGE CAPABILITY LOW OUTPUT CAPACITANCE CHARACTERIZED FOR LINEAR MODEOPERATION.APPLICATIONS: DESIGNED SPECIFICALLY FOR DYNAMICFOCUS IN CTV AND MONITOR. 3DESCRIPTION 21The BUH2M20AP is manufactured usingMultiepitaxial Mesa technology for cost-effectiveTO-220high performance.INTERNAL SCHEMATIC D

STL16N60M2 N-channel 600 V, 0.290 typ., 8 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features Order code V @ T R max. I DS Jmax DS(on) DSTL16N60M2 650 V 0.355 8 A Extremely low gate charge 1 Excellent output capacitance (COSS) profile 2 100% avalanche tested 34 Zener-protected Applications PowerFL

STL10N65M2DatasheetN-channel 650 V, 0.85 typ., 4.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV packageFeaturesVDS RDS(on ) max. IDOrder codeSTL10N65M2 650 V 1.00 4.5 A12 Extremely low gate charge34 Excellent output capacitance (COSS) profilePowerFLAT 5x6 HV 100% avalanche tested Zener-protectedD(5, 6, 7, 8)8 7 6 5Applications Switch

STD16N50M2, STF16N50M2, STP16N50M2N-channel 500 V, 0.24 typ.,13 A, MDmesh M2 Power MOSFETs in DPAK, TO-220FP and TO-220 packagesDatasheet - preliminary dataFeaturesTAB3Order codes VDS @ TJmax RDS(on) max. ID1DPAKSTD16N50M2STF16N50M2 550 V 0.28 13 ASTP16N50M2TAB Extremely low gate charge Excellent output capacitance (Coss) profile3322 10

STF6N65M2, STP6N65M2, STU6N65M2N-channel 650 V, 1.2 typ., 4 A MDmesh M2 Power MOSFETs in TO-220FP, TO-220 and IPAK packagesDatasheet - preliminary dataFeaturesTABOrder codes VDS RDS(on) max IDSTF6N65M23 3STP6N65M2 650 V 1.35 4 A2211STU6N65M2TO-220FP TO-220TAB Extremely low gate charge Excellent output capacitance (COSS) profile32 1

STI40N65M2, STP40N65M2 N-channel 650 V, 0.087 typ., 32 A MDmesh M2 Power MOSFET in IPAK and TO-220 packages Datasheet - production data Features TAB TABOrder code V R max. I DS DS(on) DSTI40N65M2 650 V 0.099 32 A STP40N65M2 3 Extremely low gate charge 232 1 Excellent output capacitance (COSS) profile 1IPAK TO-220 100% avalanche tested

STW25N60M2-EPDatasheetN-channel 600 V, 0.175 typ., 18 A MDmesh M2 EP Power MOSFET in a TO-247 packageFeaturesVDS @ TJmax RDS(on) max. IDOrder codeSTW25N60M2-EP 650 V 0.188 18 A Extremely low gate charge3 Excellent output capacitance (COSS) profile21 Very low turn-off switching losses 100% avalanche testedTO-247 Zener-protectedD(2, TAB)

STW50N65DM2AG Automotive-grade N-channel 650 V, 0.070 typ., 38 A Power MOSFET MDmesh DM2 in a TO-247 package Datasheet - production data Features R DS(on)Order code V I P DS D TOTmax. STW50N65DM2AG 650 V 0.087 38 A 300 W AEC-Q101 qualified 3 Fast-recovery body diode 2 Extremely low gate charge and input 1capacitance Low on-resistance

STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2N-channel 600 V, 0.108 typ., 26 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAK, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABVDS @ RDS(on) Order codes ID32 3TJmax max1212I PAKTO-220FPSTF33N60M2 26 A(1)TABSTI33N60M2650 V 0.125 STP33N60M2 26 ASTW33N60M233221

STD12N60DM2AGDatasheet Automotive-grade N-channel 600 V, 380 m typ., 10 A MDmesh DM2 Power MOSFET in a DPAK packageFeaturesVDS @ TJmax RDS(on ) max. IDOrder codeTABSTD12N60DM2AG 650 V 430 m 10 A321DPAK AEC-Q101 qualified Fast-recovery body diode Extremely low gate charge and input capacitanceD(2, TAB) Low on-resistance 100% avalanche test

STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2 N-channel 600 V, 0.135 typ., 22 A MDmesh M2 Power MOSFETs in DPAK, IPAK, TO-220 and TO-247 Datasheet - production data Features Order code V @ T R max. I DS Jmax DS(on) DSTB28N60M2 STI28N60M2 650 V 0.150 22 A STP28N60M2 STW28N60M2 Extremely low gate charge Excellent output capacitance (C ) profile

STW56N65M2N-channel 650 V, 0.049 typ., 49 A MDmesh M2 Power MOSFET in a TO-247 packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTW56N65M2 650 V 0.062 49 A Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested32 Zener-protected1ApplicationsTO-247 Switching applicationsFigure

STW35N60DM2 N-channel 600 V, 0.094 typ., 28 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features R DS(on)Order code VDS ID PTOT max. STW35N60DM2 600 V 0.110 28 A 210 W Fast-recovery body diode 3 Extremely low gate charge and input 2capacitance 1 Low on-resistance 100% avalanche tested TO-247 Extremely

STD22NM20NN-CHANNEL 200V - 0.088 - 22A DPAKULTRA LOW GATE CHARGE MDmesh II MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) IDSTD22NM20N 200 V

STF6N60M2, STP6N60M2, STU6N60M2N-channel 600 V, 1.06 typ., 4.5 A MDmesh II Plus low Qg Power MOSFET in TO-220FP, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABVDS @ RDS(on) 32 Order codes ID1TJmax maxIPAK3STF6N60M221STP6N60M2 650 V 1.2 4.5 ATO-220FP TABSTU6N60M2 Extremely low gate charge3 Lower RDS(on) x area vs previous

STB28N65M2, STF28N65M2,STP28N65M2, STW28N65M2N-channel 650 V, 0.15 typ., 20 A MDmesh M2 Power MOSFETsin DPAK, TO-220FP, TO-220 and TO-247 packagesDatasheet - preliminary dataFeaturesTABOrder codes VDS RDS(on) max IDSTB28N65M233STF28N65M212650 V 0.18 20 A1STP28N65M2D2PAKTO-220FPSTW28N65M2TAB Extremely low gate charge Excellent output

STFI12N60M2 N-channel 600 V, 0.395 typ., 9 A MDmesh M2 Power MOSFET in an IPAKFP package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTFI12N60M2 600 V 0.450 9 A 25 W Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected Applications Switching application

STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABTABOrder codes VDS @ TJmax RDS(on) max ID231STB24N60M2321D2PAKSTI24N60M2I2PAK650 V 0.19 18 ASTP24N60M2TABSTW24N60M2 Extremely low gate charge

STF25N60M2-EP N-channel 600 V, 0.175 typ., 18 A MDmesh M2 EP Power MOSFET in a TO-220FP package Datasheet - production data Features V @ R DS DS(on)Order code I DTJmax max. STF25N60M2-EP 650 V 0.188 18 A Extremely low gate charge Excellent output capacitance (COSS) profile Very low turn-off switching losses 32 100% avalanche tested 1

STW63N65DM2 N-channel 650 V, 0.042 typ., 60 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features R DS(on)Order code V I P DS D TOTmax. STW63N65DM2 650 V 0.05 60 A 446 W Fast-recovery body diode 3 Extremely low gate charge and input 2capacitance 1 Low on-resistance 100% avalanche tested TO-247 Extreme

STFU9N65M2DatasheetN-channel 650 V, 0.79 typ., 5 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads packageFeaturesVDS RDS(on) max. IDOrder codeSTFU9N65M2 650 V 0.90 5 A Extremely low gate charge3 Excellent output capacitance (COSS) profile21 100% avalanche testedTO-220FP Zener-protectedultra narrow leadsD(2)Applications Switching

STW35N65DM2DatasheetN-channel 650 V, 93 m typ., 32 A MDmesh DM2 Power MOSFET in a TO-247 packageFeaturesVDS RDS(on) max. IDOrder codeSTW35N65DM2 650 V 110 m 32 A Fast-recovery body diode3 Extremely low gate charge and input capacitance21 Low on-resistance 100% avalanche testedTO-247 Extremely high dv/dt ruggedness Zener-protectedD(2, TAB

STW56N60M2-4 N-channel 600 V, 0.045 typ., 52 A MDmesh M2 Power MOSFET in a TO247-4 package Datasheet - production data Features Order code V Jmax DS(on) DDS @ T R max I STW56N60M2-4 650 V 0.055 52 A Excellent switching performance thanks to the extra driving source pin Extremely low gate charge Excellent output capacitance (C ) profile oss 100%

STF7N60M2N-channel 600 V, 0.86 typ., 5 A MDmesh II Plus low Qg Power MOSFET in TO-220FP packageDatasheet - production dataFeaturesVDS @ RDS(on) Order code IDTJmax maxSTF7N60M2 650 V 0.95 5 A Extremely low gate charge32 Lower RDS(on) x area vs previous generation1 Low gate input resistanceTO-220FP 100% avalanche tested Zener-protectedApp

STW56N60M2N-channel 600 V, 0.045 typ., 52 A MDmesh M2 Power MOSFET in a TO-247 packageDatasheet - production dataFeaturesRDS(on) Order code VDS @ TJmax max IDSTW56N60M2 650 V 0.055 52 A Extremely low gate charge Excellent output capacitance (Coss) profile 32 100% avalanche tested1 Zener-protectedTO-247Applications Switching application

STP18N60DM2 N-channel 600 V, 0.260 typ., 12 A MDmesh DM2 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I DS DS(on) DSTP18N60DM2 600 V 0.295 12 A Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Ze

STFH18N60M2DatasheetN-channel 600 V, 0.255 typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP wide creepage packageFeaturesVDS @TJmax RDS(on) max. IDOrder codeSTFH18N60M2 650 V 0.280 13 A Extremely low gate charge Excellent output capacitance (COSS) profileTO-220 FP wide creepage 100% avalanche testedD(2) Zener-protected Wide distance of 4.25 mm bet

STW70N60DM2 N-channel 600 V, 0.037 typ., 66 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTW70N60DM2 600 V 0.042 66 A 446 W Fast-recovery body diode Extremely low gate charge and input 3capacitance 2 Low on-resistance 1 100% avalanche tested Extremely high dv/d

STD13N65M2N-channel 650 V, 0.37 typ., 10 A MDmesh M2 Power MOSFET in a DPAK packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDTABSTD13N65M2 650 V 0.43 10 A Extremely low gate charge32 Excellent output capacitance (Coss) profile 1 100% avalanche tested Zener-protectedDPAKApplications Switching applicationsFigure 1. I

STW70N60M2N-channel 600 V, 0.03 typ., 68 A MDmesh M2 Power MOSFET in a TO-247 packageDatasheet - production dataFeaturesOrder codes VDS @ TJmax RDS(on) max IDSTW70N60M2 650 V 0.040 68 A Extremely low gate charge321 Excellent output capacitance (Coss) profile 100% avalanche testedTO-247 Zener-protected ApplicationsFigure 1. Internal schematic

STB24N65M2, STF24N65M2, STP24N65M2 N-channel 650 V, 0.185 typ., 16 A MDmesh M2 Power MOSFET in D2PAK, TO-220FP and TO-220 packages Datasheet - production data Features Order codes V R max I DS DS(on) DSTB24N65M2 STF24N65M2 650 V 0.23 16 A STP24N65M2 Extremely low gate charge Excellent output capacitance (C ) profile oss 100% avalanche tested Ze

STD12N65M2 N-channel 650 V, 0.42 typ., 8 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) DSTD12N65M2 650 V 0.5 8 A Extremely low gate charge Excellent output capacitance (COSS) profile DPAK (TO-252) 100% avalanche tested Zener-protected Figure 1: Internal schematic diagram Applicatio

STF24N60M2, STFI24N60M2, STFW24N60M2 N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packagesDatasheet - production dataFeaturesOrder codes VDS @ TJmax RDS(on) max IDSTF24N60M2321 1 STFI24N60M2 650 V 0.19 18 A23TO-220FPSTFW24N60M2I2PAKFP(TO-281) Extremely low gate charge Lower RDS(on) x area

STW45N60DM2AG Automotive-grade N-channel 600 V, 0.085 typ., 34 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features V @ R DS DS(on)Order code I P D TOTTJmax. max. 34 250 STW45N60DM2AG 650 V 0.093 A W 3 Designed for automotive applications and 2AEC-Q101 qualified 1 Fast-recovery body diode Extremely low gate c

STL13N60M2N-channel 600 V, 0.39 typ., 7 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - production dataFeaturesOrder code VDS @ TJmax RDS(on) max IDSTL13N60M2 650 V 0.42 7 A Extremely low gate charge Lower RDS(on) x area vs previous generation123 Low gate input resistance4 100% avalanche testedPowerFLAT 5x6

STW48N60M2-4 N-channel 600 V, 0.06 typ., 42 A MDmesh M2 Power MOSFET in a TO247-4 package Datasheet - production data Features Order code V Jmax DS(on) DDS @ T R max I STW48N60M2-4 650 V 0.07 42 A Excellent switching performance thanks to the extra driving source pin Extremely low gate charge Excellent output capacitance (C ) profile oss 100% a

STB18N60M2, STP18N60M2, STW18N60M2N-channel 600 V, 0.255 typ., 13 A MDmesh II Plus low Qg Power MOSFET in D2PAK, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABVDS @ RDS(on) 3 Order codes ID1 TJmax max2D PAKSTB18N60M2STP18N60M2 650 V 0.28 13 ATABSTW18N60M2 Extremely low gate charge3 3 Lower RDS(on) x area vs previous generation

STW65N65DM2AG Automotive-grade N-channel 650 V, 0.042 typ., 60 A Power MOSFET MDmesh DM2 in a TO-247 package Datasheet - production data Features R DS(on)Order code V I P DS D TOTmax. STW65N65DM2AG 650 V 0.05 60 A 446 W Designed for automotive applications and 3AEC-Q101 qualified 2 Fast-recovery body diode 1 Extremely low gate charge and inpu

STB13N60M2, STD13N60M2N-channel 600 V, 0.35 typ., 11 A MDmesh II Plus low Qg Power MOSFETs in D2PAK and DPAK packagesDatasheet - production dataFeaturesOrder codes VDS @ TJmax RDS(on) max IDSTB13N60M2TAB650 V 0.38 11 ASTD13N60M2TAB33 Extremely low gate charge11 Lower RDS(on) x area vs previous generationDPAKD2PAK Low gate input resistance

STF28N60DM2 N-channel 600 V, 0.13 typ., 21 A MDmesh DM2 Power MOSFET in a TO-220FP package Datasheet - production data Features V @ R DS DS(on)Order code I P D TOTT max. Jmax.STF28N60DM2 650 V 0.16 21 A 30 W Fast-recovery body diode Extremely low gate charge and input 32capacitance 1 Low on-resistance 100% avalanche tested TO-220F

STD16N60M2 N-channel 600 V, 0.280 typ., 12 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) DSTD16N60M2 600 V 0.320 12 A Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected Figure 1: Internal schematic diagram Applications D(

STW48N60M2 N-channel 600 V, 0.06 typ., 42 A MDmesh M2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V Jmax DS(on) DDS @ T R max I STW48N60M2 650 V 0.07 42 A Extremely low gate charge Excellent output capacitance (C ) profile OSS32 100% avalanche tested 1 Zener-protected TO-247Applications Switchin

STD11N65M2, STP11N65M2, STU11N65M2N-channel 650 V, 0.6 typ., 7 A MDmesh II Plus low Qg Power MOSFETs in DPAK, TO-220 and IPAK packagesDatasheet - preliminary dataFeaturesTABTAB3Order codes VDS RDS(on) max ID1STD11N65M2DPAK3STP11N65M2 650 V 0.67 7 A21STU11N65M2TO-220TAB Extremely low gate charge Lower RDS(on) x area vs previous generation

AM2931-110RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.3:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.400 x .500 2L SFL (S138).METAL/CERAMIC HERMETIC PACKAGEhermetically sealed.P 105 W MIN. WITH 6.2 dB GAINOUT =ORDER CODE BRANDINGAM2931-110 2931-110DESCRIPTIONPIN CONN

STW37N60DM2AG Automotive-grade N-channel 600 V, 0.094 typ., 28 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STW37N60DM2AG 600 V 0.110 28 A 210 W Designed for automotive applications and AEC-Q101 qualified 3 Fast-recovery body diode 2 Extremely low gate charge and input 1capac

STL9N60M2N-channel 600 V, 0.76 typ., 4.8 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - production dataFeaturesOrder code VDS @ TJmax RDS(on) max IDSTL9N60M2 650 V 0.86 4.8 A Extremely low gate charge Lower RDS(on) x area vs previous generation123 Low gate input resistance4 100% avalanche testedPowerFLAT 5x

STL12N65M2 N-channel 650 V, 0.62 typ., 5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTL12N65M2 650 V 0.75 5 A 48 W 1 Extremely low gate charge 23 Excellent output capacitance (COSS) profile 4 100% avalanche tested Zener-protected PowerFLAT 5x6 HVAp

STD5N60M2, STP5N60M2, STU5N60M2N-channel 600 V, 1.26 typ., 3.5 A MDmesh II Plus low QgPower MOSFETs in DPAK, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABOrder codes VDS @ TJmax RDS(on) max ID3STD5N60M21STP5N60M2 650 V 1.4 3.5 ADPAKSTU5N60M2TAB Extremely low gate chargeTAB Lower RDS(on) x area vs previous generation3 3 Lo

STP16N60M2, STU16N60M2 N-channel 600 V, 0.28 typ., 12 A MDmesh M2 Power MOSFET in TO-220 and IPAK packages Datasheet - production data Features TABOrder code V R max. I DS DS(on) DSTP16N60M2 600 V 0.32 12 A STU16N60M2 3 2TAB1TO-220 Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested 32IPAK

STD16N65M2N-channel 650 V, 0.32 typ., 11 A MDmesh M2 Power MOSFET in a DPAK packageDatasheet - production dataFeaturesOrder code VDS @ TJmax RDS(on) max IDTABSTD16N65M2 710 V 0.36 11 A Extremely low gate charge32 Excellent output capacitance (Coss) profile 1 100% avalanche tested Zener-protectedDPAKApplications Switching applicationsFig

AM2729-110RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.3:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE .400 x .500 2L SFL (S138)hermetically sealed.P 105 W MIN. WITH 6.5 dB GAINOUT =ORDER CODE BRANDINGAM2729-110 2729-110DESCRIPTIONPIN CONNE

STP43N60DM2 N-channel 600 V, 0.085 typ., 34 A MDmesh DM2 Power MOSFET in a TO-220 package Datasheet - production data Features V @ R DS DS(on)Order code I P D TOTTJmax. max. STP43N60DM2 650 V 0.093 34 A 250 W Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high

STFU18N65M2 N-channel 650 V, 0.275 typ., 12 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code V R max I DS DS(on) DSTFU18N65M2 650 V 0.33 12 A Extremely low gate charge Excellent output capacitance (C ) profile oss 100% avalanche tested 321 Zener-protected TO-220FPApplication

STD9N60M2, STP9N60M2, STU9N60M2N-channel 600 V, 0.72 typ., 5.5 A MDmesh II Plus low Qg Power MOSFET in DPAK, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABVDS @ RDS(on) Order codes ID3TJmax max1DPAK STD9N60M2STP9N60M2 650 V 0.78 5.5 ATABSTU9N60M2TAB Extremely low gate charge3 3 Lower RDS(on) x area vs previous generation2 2

STF18N65M2N-channel 650 V, 0.275 typ., 12 A MDmesh M2 Power MOSFET in a TO-220FP packageDatasheet - production dataFeaturesRDS(on) Order code VDS IDmaxSTF18N65M2 650 V 0.33 12 A Extremely low gate charge32 Excellent output capacitance (Coss) profile1 100% avalanche testedTO-220FP Zener-protectedApplications Switching applicationsF

STF12N50M2N-channel 500 V, 0.325 typ.,10 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP packageDatasheet - preliminary dataFeaturesOrder code VDS RDS(on) max IDSTF12N50M2 500 V 0.38 10 A Extremely low gate charge Lower RDS(on) x area vs previous generation32 Low gate input resistance1 100% avalanche testedTO-220FP Zener-protectedAppli

STF40N65M2 N-channel 650 V, 0.087 typ., 32 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I DS DS(on) DSTF40N65M2 650 V 0.099 32 A Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested 32 Zener-protected 1Applications TO-220FP Switching appl

ESM2012DVNPN DARLINGTON POWER MODULE HIGH CURRENT POWER BIPOLAR MODULE VERY LOW R JUNCTION TO CASEth SPECIFIED ACCIDENTAL OVERLOADAREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE (2500V RMS) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCEINDUSTRIAL APPLICATIONS: MOTOR CONTROL UPS DC/DC & DC/AC CONVERTERSISOTOPINTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS

AM2729-125RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.P 125 W MIN. WITH 7.0 dB GAINOUT =.400 x .500 2LFL (S038)hermetically sealedBRANDINGORDER CODE2729-125AM2729-125DESCRIPTIONThe AM2729-125 device is a hig

STB40N60M2, STP40N60M2,STW40N60M2N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABTABOrder codes VDS @ TJmax RDS(on) max ID2STB40N60M23132 STP40N60M2 650 V 0.088 34 AD2PAK1STW40N60M2TO-220 Extremely low gate charge Lower RDS(on) x area vs previous

STF7N65M2N-channel 650 V, 0.98 typ., 5 A MDmesh M2 Power MOSFET in a TO-220FP packageDatasheet - preliminary dataFeaturesRDS(on) Order code VDS max IDSTF7N65M2 650 V 1.15 5 A Extremely low gate charge32 Excellent output capacitance (Coss) profile1 100% avalanche testedTO-220FP Zener-protectedApplications Switching applicationsFigure 1

STD22NM20NN-CHANNEL 200V - 0.088 - 22A DPAKULTRA LOW GATE CHARGE MDmesh II MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) IDSTD22NM20N 200 V

STF9N60M2, STFI9N60M2N-channel 600 V, 0.72 typ., 5.5 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP and I2PAKFP packagesDatasheet - production dataFeaturesVDS @ RDS(on) Order codes IDTJmax maxSTF9N60M2650 V 0.78 5.5 ASTFI9N60M2 Extremely low gate charge321213 Lower RDS(on) x area vs previous generationTO-220FP I2PAKFP (TO-281) Low

STF15N60M2-EP, STFI15N60M2-EP N-channel 600 V, 0.340 typ., 11 A MDmesh M2 EP Power MOSFET in TO-220FP and IPAKFP packages Datasheet - production data Extremely low gate charge Excellent output capacitance (COSS) profile Very low turn-off switching losses 100% avalanche tested Zener-protected Applications TO-220FP I2PAKFP (TO-281) Switching

STF12N60M2 N-channel 600 V, 0.395 typ., 9 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTF12N60M2 600 V 0.450 9 A 25 W Extremely low gate charge Excellent output capacitance (COSS) profile 3 100% avalanche tested 2 Zener-protected 1Applications TO-220FP Switch

STF5N60M2N-channel 600 V, 1.26 typ., 3.7 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP packageDatasheet - preliminary dataFeaturesVDS @ RDS(on) Order code IDTJmax maxSTF5N60M2 650 V 1.4 3.7 A Extremely low gate charge3 Lower RDS(on) x area vs previous generation21 Low gate input resistanceTO-220FP 100% avalanche tested Zener-protec

STF8N60DM2 N-channel 600 V, 550 m typ., 8 A MDmesh DM2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTF8N60DM2 600 V 600 m 8 A 25 W Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness

STP13N60M2, STU13N60M2, STW13N60M2N-channel 600 V, 0.35 typ., 11 A MDmesh II Plus low Qg Power MOSFETs in TO-220, IPAK and TO-247 packagesDatasheet - production dataFeaturesTABTABOrder codes VDS @ TJmax RDS(on) max ID321STP13N60M2321IPAKSTU13N60M2 650 V 0.38 11 ATO-220STW13N60M2 Extremely low gate charge Lower RDS(on) x area vs previous g

STI18N65M2, STP18N65M2N-channel 650 V, 0.275 typ., 12 A MDmesh M2 Power MOSFET in IPAK and TO-220 packagesDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDTABTABSTI18N65M2650V 0.33 12 ASTP18N65M23 32211 Extremely low gate chargeI2PAK TO-220 Excellent output capacitance (Coss) profile 100% avalanche tested Zener-prote

STB28N60M2, STP28N60M2, STW28N60M2N-channel 600 V, 0.135 typ., 22 A MDmesh M2 Power MOSFETs in D2PAK, TO-220 and TO-247 packagesDatasheet - production dataTAB FeaturesTABVDS @ RDS(on) Order code ID3TJmax max1321STB28N60M2D2PAKTO-220STP28N60M2 650 V 0.150 22 ASTW28N60M2 Extremely low gate charge3 Excellent output capacitance (Coss) prof

STF18N60M2N-channel 600 V, 0.255 typ., 13 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP packageDatasheet - production dataFeaturesOrder code VDS @ TJmax RDS(on) max IDSTF18N60M2 650 V 0.28 13 A Extremely low gate charge Lower RDS(on) x area vs previous generation321 Low gate input resistanceTO-220FP 100% avalanche tested Zener-protected

STB6N65M2, STD6N65M2N-channel 650 V, 1.2 typ., 4 A MDmesh M2 Power MOSFETs in D2PAK and DPAK packagesDatasheet - preliminary dataFeaturesOrder codes VDS RDS(on) max IDSTB6N65M2650 V 1.35 4 ATAB TABSTD6N65M2313 Extremely low gate charge1DPAK2D PAK Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protectedApp

STW70N65M2 N-channel 650 V, 0.039 typ., 63 A MDmesh M2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V R max. I DS DS(on) DSTW70N65M2 650 V 0.046 63 A Extremely low gate charge Excellent output capacitance (COSS) profile 3 100% avalanche tested 2 Zener-protected 1Applications TO-247 Switching applicat

STF10N60M2, STFI10N60M2N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP and IPAKFP packagesDatasheet - production dataFeaturesRDS(on) Order codes VDS @ TJmax max IDSTF10N60M2650 V 0.6 7.5 ASTFI10N60M2 Extremely low gate charge3 Lower RDS(on) x area vs previous generation1221 3 Low gate input resistance2T

STWA48N60DM2 N-channel 600 V, 0.065 typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 long leads package Datasheet - production data Features Order code V R max. I DS DS(on) DSTWA48N60DM2 600 V 0.079 40 A Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt rugged

STF11N65M2(045Y)DatasheetN-channel 650 V, 0.60 typ., 7 A MDmesh M2 Power MOSFET in a TO-220FP narrow leads packageFeaturesVDS RDS(on) max. ID PTOTOrder codeSTF11N65M2(045Y) 650 V 0.68 7 A 25 W Extremely low gate charge321 Excellent output capacitance (COSS) profileTO-220FP narrow leads 100% avalanche tested Zener-protectedD(2) Applications

STB6N60M2, STD6N60M2N-channel 600 V, 1.06 typ., 4.5 A MDmesh II Plus low Qg Power MOSFET in D2PAK and DPAK packagesDatasheet - production dataFeaturesVDS @ RDS(on) Order codes IDTJmax maxTAB TABSTB6N60M2650 V 1.2 4.5 A3STD6N60M2131DPAK2 Extremely low gate chargeD PAK Lower RDS(on) x area vs previous generation Low gate input resistanc

STL7N60M2 N-channel 600 V, 0.92 typ., 5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x5 package Datasheet - production data Features Order code V @ Tjmax R max I DS DS(on) DSTL7N60M2 650 V 1.05 5 A 675 Extremely low gate charge 4 Excellent output capacitance (COSS) profile 100% avalanche tested 112 Zener-protected PowerFLAT 5x5 Applic

STB33N65M2, STF33N65M2,STP33N65M2, STI33N65M2N-channel 650 V, 0.117 typ., 24 A MDmesh M2 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABTABRDS(on) Order codes VDS max IDSTB33N65M233121STF33N65M2TO-220FPD2PAK650 V 0.14 24 ASTP33N65M2TAB TABSTI33N65M2 Extremely low gate charge Exce

STP12N50M2N-channel 500 V, 0.325 typ.,10 A MDmesh II Plus low Qg Power MOSFET in a TO-220 packageDatasheet - preliminary dataFeaturesOrder code VDS RDS(on) max IDTABSTP12N50M2 500 V 0.38 10 A Extremely low gate charge Lower RDS(on) x area vs previous generation3 Low gate input resistance21 100% avalanche testedTO-220 Zener-protectedAppl

STW40N65M2 N-channel 650 V, 0.087 typ., 32 A MDmesh M2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V R max. I DS DS(on) DSTW40N65M2 650 V 0.099 32 A Extremely low gate charge Excellent output capacitance (COSS) profile 3 100% avalanche tested 2 Zener-protected 1Applications TO-247 Switching applicat

STF13N60M2, STFI13N60M2N-channel 600 V, 0.35 typ., 11 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP and I2PAKFP packagesDatasheet - production dataFeaturesOrder codes VDS @ TJmax RDS(on) max IDSTF13N60M2650 V 0.38 11 ASTFI13N60M232 Extremely low gate charge1123TO-220FP Lower RDS(on) x area vs previous generationI2PAKFP Low gate input r

STU12N60M2 N-channel 600 V, 0.395 typ., 9 A MDmesh M2 Power MOSFET in an IPAK package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTTABSTU12N60M2 600 V 0.450 9 A 85 W Extremely low gate charge 32 Excellent output capacitance (COSS) profile 1 100% avalanche tested Zener-protected IPAKApplications Switchi

STF11N60M2-EPDatasheetN-channel 600 V, 0.550 typ., 7.5 A MDmesh M2 EP Power MOSFET in a TO-220FP packageFeaturesVDS RDS(on) max. IDOrder codeSTF11N60M2-EP 600 V 0.595 7.5 A Extremely low gate charge Excellent output capacitance (COSS) profile321 Very low turn-off switching losses 100% avalanche testedTO-220FP Zener-protectedD(2)Applica

STL18N65M2N-channel 650 V, 0.290 typ., 8 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - preliminary dataFeaturesVDS @ Order codesTJmax RDS(on) max IDSTL18N65M2 715 V 0.365 8 A Extremely low gate charge123 Excellent output capacitance (Coss) profile4 100% avalanche testedPowerFLAT 5x6 HV Zener-protectedApplicatio

STB33N60M2N-channel 600 V, 0.108 typ., 26 A MDmesh II Plus low Qg Power MOSFETs in a D2PAK packageDatasheet - production dataFeaturesVDS @ RDS(on) TABOrder code IDTJmax maxSTB33N60M2 650 V 0.125 26 A3 Extremely low gate charge1 Lower RDS(on) x area vs previous generationD 2PAK MDmesh II technology Low gate input resistance 100% avalan

STB28N60DM2, STP28N60DM2, STW28N60DM2 N-channel 600 V, 0.13 typ., 21 A MDmesh DM2 Power MOSFETs in DPAK, TO-220 and TO-247 packages Datasheet - production data Features V @ R DS DS(on)Order code I P D TOTT max. Jmax.STB28N60DM2 STP28N60DM2 600 V 0.16 21 A 170 W STW28N60DM2 Fast-recovery body diode Extremely low gate charge and input capacita

STW43N60DM2 N-channel 600 V, 0.085 typ., 34 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features V @ DSR DS(on)Order code I P D TOTmax. TJmax. STW43N60DM2 650 V 0.093 34 A 250 W Fast-recovery body diode 3 Extremely low gate charge and input 2capacitance 1 Low on-resistance 100% avalanche tested TO-2

STD8N60DM2DatasheetN-channel 600 V, 550 m typ., 8 A, MDmesh DM2 Power MOSFET in a DPAK packageFeaturesVDS RDS(on) max. ID PTOTOrder codeTABSTD8N60DM2 600 V 600 m 8 A 85 W321 Fast-recovery body diodeDPAK Extremely low gate charge and input capacitance Low on-resistanceD(2, TAB) 100% avalanche tested Extremely high dv/dt ruggedness Ze

STF40N60M2, STFI40N60M2, STFW40N60M2N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packagesDatasheet - production dataFeaturesOrder codes VDS @ TJmax RDS(on) max IDSTF40N60M2STFI40N60M2 650 V 0.088 34 A321 STFW40N60M2123TO-220FPI2PAKFP (TO-281) Extremely low gate charge Lower RDS(on) x area

STD12N50M2N-channel 500 V, 0.325 typ.,10 A MDmesh M2 Power MOSFET in a DPAK packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTD12N50M2 500 V 0.38 10 ATAB Extremely low gate charge3 Excellent output capacitance (COSS) profile1 100% avalanche testedDPAK Zener-protectedApplications Switching applicationsFigure 1. Int

STU6N60DM2DatasheetN-channel 600 V, 0.95 typ., 5 A MDmesh DM2 Power MOSFET in an IPAK packageFeaturesVDS RDS(on) max. ID PTOTTAB Order codeSTU6N60DM2 600 V 1.10 5 A 60 W32 Fast-recovery body diode1 Extremely low gate charge and input capacitance Low on-resistanceIPAK 100% avalanche tested Extremely high dv/dt ruggednessD(2, TAB) Zen

STP26N65DM2DatasheetN-channel 650 V, 0.156 typ., 20 A, MDmesh DM2 Power MOSFET in a TO-220 packageFeaturesVDS RDS(on) max. ID PTOTOrder codeTABSTP26N65DM2 650 V 0.190 20 A 170 W Fast-recovery body diode32 Extremely low gate charge and input capacitance1 Low on-resistanceTO-220 100% avalanche tested Extremely high dv/dt ruggednessD(2, T

STW56N65M2-4N-channel 650 V, 0.049 typ., 49 A MDmesh M2 Power MOSFET in a TO247-4 packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTW56N65M2-4 650 V 0.062 49 A Excellent switching performance thanks to the extra driving source pin Extremely low gate charge4 Excellent output capacitance (Coss) profile 32 100% avalanche tes

STP16N65M2, STU16N65M2N-channel 650 V, 0.32 typ., 11 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packagesDatasheet - production dataFeaturesTABOrder code VDS @ TJmax RDS(on) max IDTABSTP16N65M2 710 V 0.36 11 ASTU16N65M2 710 V 0.36 11 A3 Extremely low gate charge23 Excellent output capacitance (Coss) profile 121 100% avalanche tested

STF16N65M2N-channel 650 V, 0.32 typ., 11 A MDmesh M2 Power MOSFET in a TO-220FP packageDatasheet - production dataFeaturesOrder code VDS @ TJmax RDS(on) max IDSTF16N65M2 710 V 0.36 11 A Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested Zener-protectedApplicationsTO-220FP Switching applicationsFigure 1.

STF13N60DM2DatasheetN-channel 600 V, 0.310 typ., 11 A MDmesh DM2 Power MOSFET in a TO-220FP packageVDS RDS(on) max. IDOrder codesSTF13N60DM2 600 V 0.365 11 A Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance321 100% avalanche tested Extremely high dv/dt ruggednessTO-220FP Zener-protectedD(2)A

STP20N60M2-EPN-channel 600 V, 0.230 typ., 13 A MDmesh M2 EP Power MOSFET in a TO-220 packageFeaturesVDS RDS(on) max. IDOrder codeTABSTB20N60M2-EP 600 V 0.278 13 A Extremely low gate charge32 Excellent output capacitance (COSS) profile1TO-220 Very low turn-off switching losses 100% avalanche tested Zener-protectedD(2, TAB)Applications

STWA48N60M2 N-channel 600 V, 0.06 typ., 42 A MDmesh M2 Power MOSFET in a TO-247 long leads package Datasheet - production data Features Order code V DS @ TJmax. RDS(on) max. ID STWA48N60M2 650 V 0.07 42 A Extremely low gate charge Excellent output capacitance (C ) profile OSS 100% avalanche tested Zener-protected Applications Switching app

STD11N50M2, STF11N50M2N-channel 500 V, 0.45 typ,8 A, MDmesh II Plus low Qg Power MOSFETs in DPAK and TO-220FP packagesDatasheet - preliminary dataFeaturesOrder codes VDS @ TJmax RDS(on) max IDSTD11N50M2550 V 0.53 8 ASTF11N50M2TAB Extremely low gate charge31 Lower RDS(on) x area vs previous generation3DPAK2 Low gate input resistance1

STF16N60M2 N-channel 600 V, 0.28 typ., 12 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I DS DS(on) DSTF16N60M2 600 V 0.32 12 A Extremely low gate charge Excellent output capacitance (COSS) profile 3 100% avalanche tested 2 Zener-protected 1Applications TO-220FP Switching applica

STD13N60DM2DatasheetN-channel 600 V, 0.310 typ., 11 A MDmesh DM2 Power MOSFET in a DPAK packageVDS RDS(on) max. IDOrder codesTABSTD13N60DM2 600 V 0.365 11 A Fast-recovery body diode321 Extremely low gate charge and input capacitanceDPAK Low on-resistance 100% avalanche testedD(2, TAB) Extremely high dv/dt ruggedness Zener-protected

STP13N65M2, STU13N65M2N-channel 650 V, 0.37 typ.,10 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packagesDatasheet - production dataFeaturesRDS(on) Order code VDS IDmaxTABSTP13N65M2TAB650 V 0.43 10ASTU13N65M232132 Extremely low gate charge1TO-220 Excellent output capacitance (Coss) profileIPAK 100% avalanche tested Zener-pr

STL12N60M2 N-channel 600 V, 0.400 typ., 6.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTL12N60M2 600 V 0.495 6.5 A 52 W 1 Extremely low gate charge 23 Excellent output capacitance (COSS) profile 4 100% avalanche tested Zener-protected PowerFLAT 5x6 HV

STD9N40M2N-channel 400 V, 0.59 typ., 6 A MDmesh II Plus low Qg Power MOSFET in a DPAK packageDatasheet - preliminary dataFeaturesOrder code VDS @ TJmax RDS(on) max IDSTD9N40M2 450 V 0.8 6 ATAB Extremely low gate charge3 Lower RDS(on) x area vs previous generation1 Low gate input resistanceDPAK 100% avalanche tested Zener-protectedApplica

STP13N60DM2DatasheetN-channel 600 V, 0.310 typ., 11 A MDmesh DM2 Power MOSFET in a TO-220 packageFeaturesVDS RDS(on ) max. IDOrder codeTABSTP13N60DM2 600 V 0.365 11 A Fast-recovery body diode32 Extremely low gate charge and input capacitance1 Low on-resistanceTO-220 100% avalanche tested Extremely high dv/dt ruggednessD(2, TAB) Ze

STF28N60M2, STFI28N60M2N-channel 600 V, 0.135 typ., 22 A MDmesh M2 Power MOSFETs in TO-220FP and I2PAKFP packagesDatasheet - production dataFeaturesOrder code VDS @ TJmax RDS(on) max IDSTF28N60M2650 V 0.150 22 ASTFI28N60M23 Extremely low gate charge21 Excellent output capacitance (Coss) profile TO-220FP 123 100% avalanche tested2I PAKFP

STF24N60DM2N-channel 600 V, 0.175 typ., 18 A MDmesh DM2 Power MOSFET in a TO-220FP packageDatasheet - production dataFeaturesVDS @ RDS(on) Order code IDTJmax maxSTF24N60DM2 650 V 0.20 18 A Fast-recovery body diode Extremely low gate charge and input 321 capacitanceTO-220FP Low on-resistance 100% avalanche tested Extremely high dv/dt rugg

STD15N50M2AG Automotive-grade N-channel 500 V, 0.336 typ., 10 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features R DS(on)Order code V I P DS D TOTmax. STD15N50M2AG 500 V 0.380 10 A 85 W Designed for automotive applications and AEC-Q101 qualified Extremely low gate charge Excellent output capacitance (C ) profile OSS

STW48N60DM2 N-channel 600 V, 0.065 typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V R max. I DS DS(on) DSTW48N60DM2 600 V 0.079 40 A Fast-recovery body diode Extremely low gate charge and input 3capacitance 2 Low on-resistance 1 100% avalanche tested Extremely high dv/dt ruggedness

STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2N-channel 650 V, 0.79 typ., 5 A MDmesh M2 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABRDS(on) Order codes VDS max ID31DPAK STD9N65M2321 STF9N65M2650 V 0.9 5 ASTP9N65M2TO-220FPTAB STU9N65M2TAB Extremely low gate charge32 Excellent output capacit

STF13N65M2, STFI13N65M2N-channel 650 V, 0.37 typ., 10 A MDmesh M2 PowerMOSFETs in TO-220FP and IPAKFP packagesDatasheet - production dataFeaturesRDS(on) Order code VDS max IDSTF13N65M2650 V 0.43 10ASTFI13N65M2 Extremely low gate charge321213 Excellent output capacitance (Coss) profileTO-220FP I2PAKFP (TO-281) 100% avalanche tested

STD11N50M2, STF11N50M2DatasheetN-channel 500 V, 0.45 typ., 8 A MDmesh M2 Power MOSFETs in DPAK and TO-220FP packagesFeaturesVDS @ TJmax RDS(on)max. IDOrder code PackageTABSTD11N50M2 DPAK3550 V 0.53 8 A2STF11N50M2 TO-220FP1321 Extremely low gate chargeDPAK TO-220FP Excellent output capacitance (COSS) profile 100% avalanche tested Zen

STF9N60M2, STFI9N60M2N-channel 600 V, 0.72 typ., 5.5 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP and I2PAKFP packagesDatasheet - production dataFeaturesVDS @ RDS(on) Order codes IDTJmax maxSTF9N60M2650 V 0.78 5.5 ASTFI9N60M2 Extremely low gate charge321213 Lower RDS(on) x area vs previous generationTO-220FP I2PAKFP (TO-281) Low

STD13N50DM2AGDatasheetAutomotive-grade N-channel 500 V, 320 m typ., 11 A MDmesh DM2 Power MOSFET in a DPAK packageFeaturesVDS RDS(on ) max. IDOrder codeTABSTD13N50DM2AG 500 V 360 m 11 A321DPAK AEC-Q101 qualified Fast-recovery body diode Extremely low gate charge and input capacitanceD(2, TAB) Low on-resistance 100% avalanche tested E

STFU16N65M2 N-channel 650 V, 0.32 typ., 11 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code V R max I DS DS(on) DSTFU16N65M2 650 V 0.36 11 A Extremely low gate charge Excellent output capacitance (C ) profile OSS 100% avalanche tested 321 Zener-protected TO-220FPApplications

STL18N60M2N-channel 600 V, 0.278 typ., 9 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - production dataFeaturesVDS @ Order codeTJmax RDS(on) max IDSTL18N60M2 650 V 0.308 9 A Extremely low gate charge123 Lower RDS(on) x area vs previous generation4 Low gate input resistancePowerFLAT 5x6 HV 100% avalanche

STL20NM20NN-CHANNEL 200V - 0.088 - 20A PowerFLATULTRA LOW GATE CHARGE MDmesh II MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) IDSTL20NM20N 200 V

STB24N60DM2, STP24N60DM2, STW24N60DM2N-channel 600 V, 0.175 typ., 18 A FDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTAB TABVDS @ RDS(on) 2Order codes ID3 TJmax max13STB24N60DM2D2PAK21STP24N60DM2 650 V 0.20 18 ATO-220STW24N60DM2 Extremely low gate charge and input capacitance32

STF12N65M2N-channel 650 V, 0.42 typ., 8 A MDmesh M2Power MOSFET in a TO-220FP packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTF12N65M2 650 V 0.5 8 A Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested3 2 Zener-protected1 ApplicationsTO-220FP Switching applicationsFigure

STF11N65M2, STFI11N65M2N-channel 650 V, 0.6 typ., 7 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP and I2PAKFP packagesDatasheet - preliminary dataFeaturesOrder codes VDS RDS(on) max IDSTF11N65M2650 V 0.67 7 ASTFI11N65M2 Extremely low gate charge3 Lower RDS(on) x area vs previous generation12231 Low gate input resistance2TO-220FPI P

STD7N60M2, STP7N60M2, STU7N60M2N-channel 600 V, 0.86 typ., 5 A MDmesh II Plus low Qg Power MOSFET in DPAK, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABVDS @ RDS(on) Order codes ID3TJmax max1STD7N60M2DPAKSTP7N60M2 650 V 0.95 5 ATABSTU7N60M2TAB Extremely low gate charge332 Lower RDS(on) x area vs previous generation21

STF11N65M2, STFI11N65M2 N-channel 650 V, 0.6 typ., 7 A MDmesh M2 Power MOSFETs in TO-220FP and IPAKFP packages Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTF11N65M2 650 V 0.68 7 A 25 W STFI11N65M2 Extremely low gate charge TO-220FP I2PAKFP (TO-281) Excellent output capacitance (C ) profile OSS 100% avalanche teste

STD5N60DM2DatasheetN-channel 600 V, 1.38 typ., 3.5 A MDmesh DM2 Power MOSFET in a DPAK packageFeaturesVDS RDS(on) max. ID PTOTOrder codeTABSTD5N60DM2 600 V 1.55 3.5 A 45 W321 Fast-recovery body diodeDPAK Extremely low gate charge and input capacitance Low on-resistanceD(2, TAB) 100% avalanche tested Extremely high dv/dt ruggedness

STD9HN65M2 N-channel 600 V, 0.71 typ., 5.5 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) DSTD9HN65M2 600 V 0.82 5.5 A Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected Figure 1: Internal schematic diagram Applications D(

STB35N60DM2 N-channel 600 V, 0.094 typ., 28 A MDmesh DM2 Power MOSFET in a DPAK package Datasheet - production data Features R DS(on)Order code VDS ID PTOT TAB max. STB35N60DM2 600 V 0.110 28 A 210 W 3 Fast-recovery body diode 1 Extremely low gate charge and input capacitance Low on-resistance D2PAK 100% avalanche tested Extremely

STL24N60M2N-channel 600 V, 0.186 typ., 18 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 8x8 HV packageDatasheet - production dataFeaturesOrder code VDS @ TJmax RDS(on) max IDS(2) Bottom viewS(2)S(2)STL24N60M2 650 V 0.21 18 AG(1)D(3) Extremely low gate charge Lower RDS(on) x area vs previous generation Low gate input resistancePowerFLAT

STL33N60M2 N-channel 600 V, 0.115 typ., 22 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - production data Features Order code VDS @ T R I Jmax DS(on)max DSTL33N60M2 650 V 0.135 22 A Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested Zener-protected Applications Switching app

STB33N60DM2, STP33N60DM2, STW33N60DM2 N-channel 600 V, 0.110 typ., 24 A MDmesh DM2 Power MOSFET in DPAK, TO-220 and TO-247 packages Datasheet - production data Features Order code V @ T R max. I DS Jmax. DS(on) DSTB33N60DM2 650 V 0.130 24 A STP33N60DM2 650 V 0.130 24 A STW33N60DM2 650 V 0.130 24 A Fast-recovery body diode Extremely low gate charg

STL33N60DM2 N-channel 600 V, 0.115 typ., 21 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - production data Features VDS @ Order code RDS(on)max ID T Jmax5STL33N60DM2 650 V 0.140 21 A 432 Fast-recovery body diode 1 Extremely low gate charge and input capacitance Low on-resistance PowerFLAT 8x8 HV 100% ava

Preliminary DatasheetRJH60M2DPE R07DS0531EJ0100600 V - 12 A - IGBT Rev.1.00Application: Inverter Aug 30, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno

Preliminary DatasheetRJH60M2DPP-M0 R07DS0530EJ0100600 V - 12 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec

Preliminary Datasheet RJK03M2DPA 30V, 45A, 2.8mmax. R07DS0766EJ0200N Channel Power MOS FET Rev.2.00High Speed Power Switching Feb 12, 2013Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DE-A(Package nam

Preliminary Datasheet RJH60M2DPP-M0 R07DS0530EJ0300600V - 12A - IGBT Rev.3.00Application: Inverter May 25, 2012Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (85 ns typ.) in one package Trench gate and thin wafer tech

Preliminary Datasheet RJH60M2DPE R07DS0531EJ0300600V - 12A - IGBT Rev.3.00Application: Inverter May 25, 2012Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (85 ns typ.) in one package Trench gate and thin wafer technol

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

November 2001IRFM210B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.77A, 200V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 7.2 nC)planar, DMOS technology. Low Crss ( typical 6.8 pF)This advanced technology has been especially tailored to Fas

August 2005FDFM2P110Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description ApplicationsFDFM2P110 combines the exceptional performance of Buck BoostFairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a FeaturesMicroFET package. This device is designed specifically as a single package -3.5 A

FSAM20SH60ASPMTM (Smart Power Module)General Description FeaturesFSAM20SH60A is an advanced smart power module UL Certified No. E209204(SPM) that Fairchild has newly developed and designed to 600V-20A 3-phase IGBT inverter bridge including controlprovide very compact and high performance ac motorICs for gate driving and protection drives mainly targeting high speed low-pow

November 2001IRFM220B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.13A, 200V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to Fast

August 2005FDFM2N111Integrated N-Channel PowerTrench MOSFET and Schottky Diode General Description ApplicationsFDFM2N111 combines the exceptional performance of Standard Buck ConverterFairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a FeaturesMicroFET package. This device is designed specifically as a single pack

IRLM210AAdvanced Power MOSFETFEATURESBVDSS = 200 Vn Avalanche Rugged TechnologyRDS(on) = 1.5 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = 0.77 An Improved Gate Chargen Extended Safe Operating AreaSOT-223n Lower Leakage Current : 10 A(Max.) @ VDS = 200V2n Lower RDS(ON) : 1.185 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum Ratings

IRLM220AAdvanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.13 A Improved Gate Charge Extended Safe Operating AreaSOT-223 Lower Leakage Current : 10 A(Max.) @ VDS = 200V2 Lower RDS(ON) : 0.609 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum R

FSAM20SM60ASPMTM (Smart Power Module)General Description FeaturesFSAM20SM60A is an advanced smart power module UL Certified No. E209204(SPM) that Fairchild has newly developed and designed to 600V-20A 3-phase IGBT inverter bridge including controlprovide very compact and high performance ac motorICs for gate driving and protection drives mainly targeting medium speed low-p

PRELIMINARY DATA SHEETNPN SILICON TRANSISTOR NE687M23OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE: World's smallest transistor package footprint leads are completely underneath package body0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance0.251 HIGH GAIN BANDWIDTH PRODUCT:fT =

PRELIMINARY DATA SHEETNPN SILICON TRANSISTOR NE856M23OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE: World's smallest transistor package footprint leads are completely underneath package body0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance0.251 LOW NOISE FIGURE:NF = 1.4 dB at

PRELIMINARY DATA SHEETNPN SILICON TRANSISTOR NE685M23OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE: World's smallest transistor package footprint leads are completely underneath package body0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance0.251 HIGH GAIN BANDWIDTH PRODUCT:fT =

PRELIMINARY DATA SHEETNPN SILICON TRANSISTOR NE681M23OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE: World's smallest transistor package footprint leads are completely underneath package body0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance0.25 HIGH GAIN BANDWIDTH PRODUCT: 1fT =

PRELIMINARY DATA SHEETNPN SILICON TRANSISTOR NE688M23OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M03 NEW MINIATURE M23 PACKAGE: World's smallest transistor package footprint leads are completely underneath package body0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance HIGH GAIN BANDWIDTH PRODUCT:0.251fT =

BUK9M24-40EN-channel 40 V, 24 m logic level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetit

BUK7M20-40HN-channel 40 V, 20.0 m standard level MOSFET in LFPAK3329 January 2019 Product data sheet1. General descriptionAutomotive qualified standard level N-channel MOSFET in an LFPAK33 package using Trench 9TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in highperformance automotive applications.2. Features and benefits Fully aut

BUK7M21-40EN-channel 40 V, 21 m standard level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK33 (Power33) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 Compliant R

BUK9M24-60EN-channel 60 V, 24 m logic level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetit

BUK9M20-40HN-channel 40 V, 20.0 m logic level MOSFET in LFPAK3329 January 2019 Product data sheet1. General descriptionAutomotive qualified logic level N-channel MOSFET in an LFPAK33 package using Trench 9TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in highperformance automotive applications.2. Features and benefits Fully automotiv

BUK7M27-80EN-channel 80 V, 27 m standard level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK33 (Power33) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 Compliant R

BUK7M22-80EN-channel 80 V, 22 m standard level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK33 (Power33) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 Compliant R

BUK9M28-80EN-channel 80 V, 28 m logic level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetit

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.13 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V2 Low RDS(ON) : 0.626 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 0.64 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V2 Lower RDS(ON) : 1.393 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 0.77 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V2 Low RDS(ON) : 1.169 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 1.1 Rugged Gate Oxide Technology Lower Input CapacitanceID = 0.92 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V2 Low RDS(ON) : 0.742 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

BSM 25 GAL 120 DN2IGBT Power Module Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 25 GAL 120 DN2 1200V 38A HALF BRIDGE GAL 1 C67076-A2009-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200

4V Drive Nch+Pch MOSFET SH8M24 Structure Dimensions (Unit : mm) Silicon N-channel / P-channel MOSFET SOP8Features 1) Low on-resistance. 2) Built-in G-S protection diode. 3) Small surface mount package (SOP8). Application Switching Each lead has same dimensionsPackaging specifications Inner circuit (8) (7) (6) (5)Package TapingType Code TBBasic

US6M2 Transistors 2.5V Drive Nch+Pch MOSFET US6M2 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET / TUMT6Silicon P-channel MOSFET Features 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in G-S Protection Diode. Abbreviated symbol : M02 ApplicationsSwitching

1.2V Drive Nch+Pch MOSFET EM6M2 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET / EMT6Silicon P-channel MOSFET Features 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (1.2V drive). 4) Built-in G-S Protection Diode. Each lead has same dimensionsAbbreviated symbol : M02 Applications Inner circuit Switch

SP8M24FRADatasheet45V Nch+Pch Power MOSFETlOutlinelTr1:Nch Tr2:PchSymbolVDSS 45V -45V SOP8RDS(on)(Max.) 46m 63mID 4.5A 3.5APD 2.0W lFeaturesllInner circuitl1) Low on - resistance2) Small Surface Mount Package (SOP8)3) Pb-free lead plating ; RoHS compliant4) Halogen Free5) AEC-Q101 QualifiedlPa

SP8M21SP8M21FRATransistorsAEC-Q101 Qualified4V Drive Nch+Pch MOSFETSP8M21SP8M21FRA Structure Dimensions (Unit : mm)Silicon N-channel MOSFET / SOP8Silicon P-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S protection diode. 3) Small and surface mount package (SOP8). Each lead has same dimensions ApplicationsSwitching Package specifications Inn

2.5V Drive Nch MOSFET 1.5V Drive Pch MOSFET TT8M2 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET/ TSST8Silicon P-channel MOSFET (8) (7) (6) (5) Features 1) Low on-state resistance. (1) (2) (3) (4)2) Low voltage drive. 3) High power package. Abbreviated symbol : M02Each lead has same dimensions Application Inner circuit Switching (8) (7) (6) (5)

SMM2348ESwww.vishay.comVishay SiliconixMedical N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY High Quality Manufacturing Process UsingVDS (V) 30SMM Process FlowRDS(on) () at VGS = 10 V 0.024 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.032 100 % Rg and UIS TestedID (A) 8 Material categorization:Configuration SingleFor definiti

SUM25P10-138Vishay SiliconixP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)c Qg (Typ.) 100 % Rg and UIS Tested0.138 at VGS = - 10 V - 16.3 Material categorization:0.141 at VGS = - 7.5 V - 16.1 24 nCFor definitions of compliance please see- 100www.vishay.com/doc?999120.142 at VGS = - 6 V - 16.

SQM25N15-52www.vishay.comVishay SiliconixAutomotive N-Channel 150 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 150 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.052 100 % Rg and UIS TestedID (A) 25 AEC-Q101 QualifieddConfiguration Single Material categorization:For definitions of compliance pleas

SUM90N08-6m2PVishay SiliconixN-Channel 75-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A) Qg (Typ) 175 C Junction Temperature0.0062 at VGS = 10 V75 RoHS90d 75 100 % Rg and UIS Tested COMPLIANTAPPLICATIONS Power Supply- Secondary Synchronous Rectification IndustrialDTO-263 GG D S Top Vie

SQM200N04-1m1Lwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0011 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.0013 AEC-Q101 QualifieddID (A) 200 Material categorization:Configuration Sin

SQD100N03-3m2Lwww.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURES TrenchFET Power MOSFETPRODUCT SUMMARY 100 % Rg and UIS TestedVDS (V) 30 AEC-Q101 QualifieddRDS(on) () at VGS = 10 V 0.0032 Material categorization:RDS(on) () at VGS = 4.5 V 0.0039For definitions of compliance please seeID (A) 100www.vishay.com/doc?

SUM90N03-2m2PVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested Material categorization:0.0022 at VGS = 10 V 9030 82 nCFor definitions of compliance please see0.0027 at VGS = 4.5 V 90www.vishay.com/doc?99912TO-263APPLICATIONSD OR-ing

SUP90N08-8m2PVishay SiliconixN-Channel 75 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) RDS(on) () ID (A) Qg (Typ) 175 C Junction Temperature75 0.0082 at VGS = 10 V 100 % Rg and UIS Tested90d 58 Material categorization:For definitions of compliance please seewww.vishay.com/doc?99912TO-220AB APPLICATIONS Power S

SUM27N20-78Vishay SiliconixN-Channel 200 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.078 at VGS = 10 V 27 Low Thermal Resistance Package2000.083 at VGS = 6 V 26 PWM Optimized for Fast Switching Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-263 Is

SQM200N04-1m7Lwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 40 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.0017 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V 0.0020 AEC-Q101 qualified dID (A) 200Configuration Single Material categorization:

SUM90N10-8m2PVishay SiliconixN Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) RDS(on) () ID (A) Qg (Typ) 175 C Junction TemperatureRoHS0.0082 at VGS = 10 V100COMPLIANT90d 97 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Supply- Secondary Synchronous Rectification

SQM200N04-1m8www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 40 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.0018 100 % Rg and UIS testedID (A) 200 AEC-Q101 qualified dConfiguration SinglePackage TO-263-7L Material categorization: for definitions

SUM23N15-73Vishay SiliconixN-Channel 150 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.073 at VGS = 10 V 23 Low Thermal Resistance Package1500.077 at VGS = 6 V 22.5 PWM Optimized Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchTO-2

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CMPDM202PHSURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMPDM202PH SILICON MOSFETis a High Current P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers High Current, Low rDS(ON), Low Threshold Volta

CDM22010-650www.centralsemi.comSILICON N-CHANNEL POWER MOSFETDESCRIPTION:10 AMP, 650 VOLTThe CENTRAL SEMICONDUCTOR CDM22010-650 is a high current, 650 Volt N-Channel power MOSFET designed for high voltage, fast switching applications such as Power Factor Correction (PFC), lighting and power inverters. This MOSFET combines high voltage capability with low rDS(ON), low thres

CMPDM203NHSURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMPDM203NH SILICON MOSFETis a High Current N-Channel Enhancement-mode Silicon MOSFET, manufactured by the N-Channel DMOS Process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers High Current, Low rDS(ON), Low Threshold Volta

DMP22M2UPS Green20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package Cooler Running Applications BVDSS RDS(ON) max TC = +25C High Conversion Efficiency Low RDS(ON) Minimizes On State Losses 2.5m @ VGS = -10V -60A -20V

AUTOMOTIVE GRADE AUIRL7766M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 100V Optimized for Automotive DC-DC and other Heavy Load Applications RDS(on) typ. 8.0m Logic Level Gate Drive max. 10m Exceptionally Small Footprint and Low Profile ID (Silicon Limited) 51A High Power Density Qg (typical) 44nC L

AUTOMOTIVE GRADE AUIRF7648M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 60V Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 5.5m Exceptionally Small Footprint and Low Profile max. 7.0m High Power Density ID (Silicon Limited) 68A Low Parasitic Parameters Qg (typic

AUTOMOTIVE GRADE AUIRL7736M2TR Automotive DirectFET Power MOSFET Logic LevelV(BR)DSS 40V Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 2.2m other Heavy Load Applications max. 3.0m Exceptionally Small Footprint and Low Profile ID (Silicon Limited) 112A High Power Density Qg (typical) 52nC

AUTOMOTIVE GRADE AUIRF7675M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 150V Optimized for Class D Audio Amplifier Applications Low Rds(on) for Improved Efficiency RDS(on) typ. 47m Low Qg for Better THD and Improved Efficiency max. 56m Low Qrr for Better THD and Lower EMI Rg (typical) 1.2 Low Parasiti

D a t a S h e e t , Aug. 2010 Control Integrated POwer System (CIPOS) IGCM2 0F60HA http://www.lspst.com F o r P o w e r M a n a g e m e n t A p p l i c a t i o n CIPOS IGCM20F60HA Revision History: 2010-08 Ver.1.1 Previous Version: Datasheet Ver. 1.0 Page Subjects (major changes since last revision) 11 tFLTCLR Authors: Junho Song, Junbae Lee and Daewoong Chung E

Technische Information / technical informationIGBT-ModuleBSM200GB120DLCIGBT-modules62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emitter voltageKollektor-Dauergleichstro

AUTOMOTIVE GRADE AUIRF7734M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 3.8m Exceptionally Small Footprint and Low Profile max. 4.9m High Power Density ID (Silicon Limited) 72A Low Parasitic Parameters Qg (typic

D a t a S h e e t , Aug. 2010 Control Integrated POwer System (CIPOS) IGCM2 0F60G A http://www.lspst.com F o r P o w e r M a n a g e m e n t A p p l i c a t i o n CIPOS IGCM20F60GA Revision History: 2010-08 Ver.1.1 Previous Version: Datasheet Ver. 1.0 Page Subjects (major changes since last revision) 11 tFLTCLR Authors: Junho Song, Junbae Lee and Daewoong Chung

AUTOMOTIVE GRADE AUIRF7736M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 2.5m Exceptionally Small Footprint and Low Profile max. 3.0m High Power Density ID (Silicon Limited) 108A Low Parasitic Parameters Qg (typi

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM21N50 500 V 21 A 0.25 Power MOSFETsIXFH/IXFM/IXFT24N50 500 V 24 A 0.23 IXFH/IXFT26N50 500 V 26 A 0.20 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr 250 ns TO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to

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IXTH 20N60 VDSS = 600 VMegaMOSTMFETIXTM 20N60 ID25 = 20 ARDS(on) = 0.35 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C 15N60 15 ATO-204 AE (IXTM)20N60 20 AIDM TC = 25C, p

VWM 270-0075X2VDSS = 75 VThree phase full bridgeID25 = 270 Awith Trench MOSFETsRDS(on) = 2.1 mL+G3 G5T1 T3 T5G1S3S5S1L1L2L3G4 G6T2 T4 T6G2S4S6S2L-ApplicationsMOSFET T1 - T6AC drivesSymbol Conditions Maximum Ratings in automobilesVDSS TVJ = 25C to 150C 75 V - electric power steering VGS 20 V - starter generator in indu

Datasheet.Live

VCES IC25 VCE(sat)Low VCE(sat) IXGH/IXGM 25 N100 1000 V 50 A 3.5 VHigh speed IGBT IXGH/IXGM 25 N100A 1000 V 50 A 4.0 VSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 M 1000 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C50 AIC90 TC = 90C25 A TO-204 AE (IXGM)ICM TC = 25C, 1 m

FMD 21-05QCFDM 21-05QCID25 = 21 AQ-ClassVDSS = 500 VPower MOSFETsRDSon typ. = 190 mChopper Topologiesin ISOPLUS i4-PACTMFMD FDM3 3Preliminary data5441152 2Features MOSFET Q-Class Power MOSFET technologySymbol Conditions Maximum Ratings - low RDSon- low gate charge for high frequencyVDSS TVJ = 25C to 150C 500 Voperat

VCES IC25 VCE(sat)Low VCE(sat) IGBT IXGH/IXGM 20 N60 600 V 40 A 2.5 VHigh speed IGBT IXGH/IXGM 20 N60A 600 V 40 A 3.0 VSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C40 AIC90 TC = 90C20 A TO-204 AE (IXGM)ICM TC = 25C, 1 ms

VCES IC25 VCE(sat)Low VCE(sat) IXGH/IXGM 25 N100 1000 V 50 A 3.5 VHigh speed IGBT IXGH/IXGM 25 N100A 1000 V 50 A 4.0 VSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 M 1000 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C50 AIC90 TC = 90C25 A TO-204 AE (IXGM)ICM TC = 25C, 1 m

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM 15 N60 600 V 15 A 0.50 WPower MOSFETsIXFH/IXFM 20 N60 600 V 20 A 0.35 Wtrr 250 nsN-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 MW 600 V(TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 2

Advance Technical InformationPolarHVTM HiPerFETVDSS = 500VFMM22-05PFN-Channel Power MOSFETID25 = 13APhase Leg Topology RDS(on) 270m 33T1trr(max) 200ns5544T2ISOPLUS i4-PakTM1122Symbol Test Conditions Maximum RatingsTJ -55 ... +150 CTJM 150 C1Tstg -55 ... +150 CIsolated TabVIS

Advance Technical InformationPolarHVTM HiPerFETVDSS = 600VFMM22-06PFN-Channel Power MOSFETID25 = 12APhase leg Topology RDS(on) 350m 33T1trr(max) 200ns5544T2112 ISOPLUS i4-PakTM2Symbol Test Conditions Maximum RatingsTJ -55 ... +150 CTJM 150 C1Tstg -55 ... +150 CIsolated TabVISO

VDSS ID25 RDS(on)MegaMOSTMFETIXTH / IXTM 21N50 500 V 21 A 0.25 IXTH / IXTM 24N50 500 V 24 A 0.23 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VD (TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C 21N50 21 A

M28S-BMCCMicro Commercial ComponentsTMM28S-C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311M28S-DPhone: (818) 701-4933Fax: (818) 701-4939Features Capable of 0.625Watts of Power Dissipation. NPN Silicon Collector-current 1.0APlastic-Encapsulate Collector-base Voltage 40V Operating and storage junction temperature range: -55OC to +1

M28S-BMCCMicro Commercial ComponentsTMM28S-C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311M28S-DPhone: (818) 701-4933Fax: (818) 701-4939Features Capable of 0.625Watts of Power Dissipation. NPN Silicon Collector-current 1.0APlastic-Encapsulate Collector-base Voltage 40V Operating and storage junction temperature range: -55OC to +1

M28S-BMCCMicro Commercial ComponentsTMM28S-C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311M28S-DPhone: (818) 701-4933Fax: (818) 701-4939Features Capable of 0.625Watts of Power Dissipation. NPN Silicon Collector-current 1.0APlastic-Encapsulate Collector-base Voltage 40V Operating and storage junction temperature range: -55OC to +1

205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246,www.omnirel.comELECTRICAL CHARACTERISTICS: OM200F120CMC (Tc= 25C unless otherwise specified)Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICSCollector Emitter Breakdown Voltage, VCE=0V VCES 1200 VZero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 10AGate Emitter Leakage Current, VGE=+/-15

205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, ww.omnirel.comELECTRICAL CHARACTERISTICS: OM200L120CMC (Tc= 25C unless otherwise specified)Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICSCollector Emitter Breakdown Voltage, VCE=0V VCES 1200 VZero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 2AGate Emitter Leakage Current, VGE=+/-15V

205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.comELECTRICAL CHARACTERISTICS: OM200F120CMA (Tc= 25C unless otherwise specified)Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICSCollector Emitter Breakdown Voltage, VCE=0V VCES 1200 VZero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 10AGate Emitter Leakage Current, VGE=+/-1

205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.comELECTRICAL CHARACTERISTICS: OM200L120CMD (Tc= 25C unless otherwise specified)Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICSCollector Emitter Breakdown Voltage, VCE=0V VCES 1200 VZero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 2AGate Emitter Leakage Current, VGE=+/-20

205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.comELECTRICAL CHARACTERISTICS: OM200F120CMD (Tc= 25C unless otherwise specified)Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICSCollector Emitter Breakdown Voltage, VCE=0V VCES 1200 VZero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 10AGate Emitter Leakage Current, VGE=+/-1

205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.comELECTRICAL CHARACTERISTICS: OM200L120CMA (Tc= 25C unless otherwise specified)Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICSCollector Emitter Breakdown Voltage, VCE=0V VCES 1200 VZero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 2AGate Emitter Leakage Current, VGE=+/-15

OM23P06ST OM20P10ST OM12P10ST OM8P20ST OM8P25ST OM2P50STOM23P06SA OM20P10SA OM12P10SA OM8P20SA OM8P25SA OM2P50SAPOWER MOSFET IN HERMETIC ISOLATEDJEDEC PACKAGE, P-CHANNEL60V To 500V P-Channel MOSFET In AHermetic PackageDFEATURES Isolated Hermetic Metal Package P-ChannelG Fast Switching, Low Drive Current Ease of Paralleling For Added Power Available Scree

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

This product complies with the RoHS Directive (EU 2002/95/EC).MTM23227Silicon N-channel MOSFETFor switching Overview PackageMTM23227 is the l N-channel MOS FET that is highly suitable ofr DC-DC Codeconverter and other switching circuits. SMini3-G1-B Pin Name Features 1: Gate 2: Source Realization of low on-resistance, using extremely fine process (4.6 mW

MTM23110Silicon P-channel MOSFETFor switching Overview PackageMTM23110 is P-channel MOS FET for load switch circuits. Code SMini3-G1-B Features Pin Name Low voltage drive (1.8 V, 2.5 V, 4 V) 1: Gate Realization of low on-resistance, using extremely fine process 2: Source Contributes to miniaturization of sets, reduction of component count. 3:

Doc No. TT4-EA-13115Revision. 2Product StandardsMOS FETMTM232270LBFMTM232270LBFSilicon N-channel MOS FETUnit : mm For switching2.0MTM13227 in SMini3 type package0.3 0.153 Features Low drain-source On-state resistance : RDS(on) typ = 85 m (VGS = 4.0 V) Low drive voltage: 2.5 V driveHalogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 c

MTM23123Silicon P-channel MOSFETFor switching Overview PackageMTM23123 is P-channel MOS FET for load switch circuits. Code SMini3-G1-B Features Pin Name Low voltage drive (2.5 V, 4 V) 1: Gate Realization of low on-resistance, using extremely fine process 2: Source Contributes to miniaturization of sets, reduction of component count. 3: Drain E

Doc No. TT4-EA-12901Revision. 3MOS FETMTM232230LBFMTM232230LBFNMOS FETUnit : mm 2.00.3 0.153 RDS(on) typ = 20 m (VGS = 4.0 V) 2.5 V (EU RoHS / UL-94

MTM23223Silicon N-channel MOSFETFor switching Overview PackageMTM23223 is N-channel MOS FET for load switch circuits. Code SMini3-G1-B Pin Name Features 1: Gate Low voltage drive (2.5 V, 4 V) 2: Source Realization of low on-resistance, using extremely fine process 3: Drain Contributes to miniaturization of sets, reduction of component count.

UNISONIC TECHNOLOGIES CO., LTD UTM2054 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTM2054 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 35m @VGS=10V * RDS(ON)= 45m @VGS=4.5V * RDS(ON)= 11

UNISONIC TECHNOLOGIES CO., LTD UTM2513 Power MOSFET N-CHANNEL ENHANCEMENT MODE FEATURES * RDS(ON) = 10.5m(typ.) @VGS = 10 V * RDS(ON) = 16m(typ.) @VGS = 4.5 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain Lead-free: UTM2513L Halogen-free: UTM2513G 1.Gate3.Source ORDERING INFORMATION

UNISONIC TECHNOLOGIES CO., LTD M28S NPN SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER1 FEATURES TO-92* Excellent HFE Linearity * High DC Current Gain 3* High Power Dissipation APPLICATION 1* Audio Output Driver Amplifier 2* General Purpose Switch SOT-23 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Halogen Free

UNISONIC TECHNOLOGIES CO., LTD UTM2054 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTM2054 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 35m @VGS=10V * RDS(ON)= 45m @VGS=4.5V * RDS(ON)= 11

APT20M22LVFR200V 100A 0.022POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche T

APT20M22JVR200V 97A 0.022POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche

APT20M22JVR200V 97A 0.022POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche

APT20M20B2FLLAPT20M20LFLL200V 100A 0.020WTMFREDFET POWER MOS 7B2FLLPower MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchingT-MAXTO-264losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with excepti

APT20M20B2FLLAPT20M20LFLL200V 100A 0.020RFREDFET POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching loss

APT20M20B2LLAPT20M20LLL200V 100A 0.020WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast

APT20M22B2VFR200V 100A 0.022POWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanch

APT20M26WVR200V 65A 0.026POWER MOS VTO-267Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

APT10M25BVR100V 75A 0.025POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

APT10M25SVR100V 75A 0.025POWER MOS VD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

APT20M22JVFR200V 97A 0.022POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Fast Recovery Body Diode

APT20M20B2LLAPT20M20LLL200V 100A 0.020R POWER MOS 7 MOSFETT-MAXPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong wi

APT10M25BVFR100V 75A 0.025POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes

APT10M25BVFR100V 75A 0.025POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes

APT20M20JLL200V 106A 0.020 WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's

APT20M22B2VR200V 100A 0.022POWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D L

APT20M22LVR200V 100A 0.022POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.. Faster Switching 100% Avalanche Tested D Low

APT20M20JFLL200V 106A 0.020WTMFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent wi

SUM202MNP-Channel MOSFET + PNP BJTIntegrated Power MOSFET with PNP Low VCE(sat) Switching Transistor DFN-8 8 This integrated device represents a new level of safety andboard-space reduction by combining the 20V P-Channel FET with a1 PNP Silicon Low VCE(sat) switching transistor. This newly integratedproduct provides higher efficiency and accuracy for battery poweredMOSFET

SUM201MNP-Channel MOSFET + PNP BJTIntegrated Power MOSFET with PNP Low VCE(sat) Switching Transistor DFN-8 This integrated device represents a new level of safety andboard-space reduction by combining the 20V P-Channel FET with aPNP Silicon Low VCE(sat) switching transistor. This newly integratedproduct provides higher efficiency and accuracy for battery poweredMOSFET portab

VDS 1200 VID @ 120C 50 ACPM2-1200-0025B RDS(on) 25 m Silicon Carbide Power MOSFET TM Z-FET MOSFETN-Channel Enhancement ModeFeatures Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS CompliantBenefits

VDS 1.2 kVCCS050M12CM21.2kV, 50A Silicon Carbide RDS(on) (TJ = 25C) 25 mSix-Pack (Three Phase) ModuleEOFF (TJ = 150C) 0.6 mJZ-FETTM MOSFET and Z-RecTM DiodeFeatures Package Ultra Low Loss Zero Reverse Recovery Current Zero Turn-off Tail Current High-Frequency Operation Positive Temperature Coefficient on VF and VDS(on) Cu Baseplate, AlN DBCSy

Technische Information / Technical InformationIGBT-ModuleBSM 200 GB 170 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-SperrspannungTvj = 25C VCES 1700 Vcollector-emitter voltageTC = 80 C IC,nom. 200 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 400 APeriodischer Kollek

Technische Information / Technical InformationIGBT-ModuleBSM 200 GD 60 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 600 Vcollector-emitter voltageTC= 45C IC,nom. 200 AKollektor-DauergleichstromDC-collector currentTC= 25C IC 226 APeriodischer Kollektor Spitzenstrom

BSM 25 GB 120 DN2IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 25 GB 120 DN2 1200V 38A HALF-BRIDGE 1 C67076-A2109-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate-emitter voltage VGE

Technische Information / Technical InformationIGBT-ModuleBSM 20 GD 60 DLC E3224IGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 600 Vcollector-emitter voltageTC= 80C IC,nom. 20 AKollektor-DauergleichstromDC-collector currentTC= 25C IC 32 APeriodischer Kollektor Spitzenst

Technische Information / Technical InformationIGBT-ModuleBSM200GB120DLCIGBT-Modulesvorlufige Datenpreliminary dataHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 1200 Vcollector-emitter voltageTC = 80 C IC,nom. 200 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 420

BSM 25 GD 120 DN2IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 25 GD 120 DN2 1200V 35A ECONOPACK 2 C67076-A2505-A67BSM 25 GD120DN2E3224 1200V 35A ECONOPACK 2K C67070-A2505-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1

Technische Information / technical informationIGBT-ModuleBSM200GAL120DLCIGBT-modules62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Vorlufige Daten / preliminary dataHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emit

BSM 200 GA 120 DN2IGBT Power Module Single switch Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 200 GA 120 DN2 1200V 300A SINGLE SWITCH 1 C67076-A2006-A70BSM 200 GA 120 DN2 S 1200V 300A SSW SENSE 1 C67070-A2006-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollect

BSM 200 GB 120 DN2IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 200 GB 120 DN2 1200V 290A HALF-BRIDGE 2 C67070-A2300-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate-emitter voltage VGE

Technische Information / technical informationIGBT-ModuleBSM200GA120DLCSIGBT-modules62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emitter voltageKollektor-Dauergleichstr

BSM 200 GAL 120 DN2IGBT Power Module Single switch with chopper diode at collector Chopper diode like diode of BSM300GA120DN2 Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 200 GAL 120 DN2 1200V 290A HB 200GAL C67070-A2301-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE =

Technische Information / technical informationIGBT-ModuleBSM200GA120DLCIGBT-modulesIGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emitter voltageKollektor-Dauergleichstrom T = 80C I 200 ADC-collector current T = 25C I 370 APeriodischer Kollektor Spitzenstromt = 1 ms, T = 80

BSM 25 GD 120 DN2 E3224IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 25 GD 120 DN2 1200V 35A ECONOPACK 2 C67076-A2505-A67BSM 25 GD120DN2E3224 1200V 35A ECONOPACK 2K C67070-A2505-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage

BSM 200 GA 170 DN2IGBT Power Module Single switch Including fast free-wheeling diodes Package with insulated metal base plate RG on,min = 6.8 OhmType VCE IC Package Ordering CodeBSM 200 GA 170 DN2 1700V 290A SINGLE SWITCH 1 C67070-A2705-A67BSM 200 GA 170 DN2 S 1700V 290A SSW SENSE 1 C67070-A2707-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter vo

Technische Information / Technical InformationIGBT-ModuleBYM 200 B 170 DN2IGBT-Modulesvorlufige Datenpreliminary dataHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesSperrspannung der Diode Tvj = 25C VCES 1700 VDiode rerverse voltageDauergleichstromTC = 80 C IF 200 ADC forward currentPeriodischer Spitzenstromtp =

Technische Information / Technical InformationIGBT-ModuleBSM 200 GB 60 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 600 Vcollector-emitter voltageTc= 50C IC,nom. 200 AKollektor-DauergleichstromDC-collector currentTc= 25C IC 230 APeriodischer Kollektor Spitzenstrom

Technische Information / Technical InformationIGBT-ModuleBSM 200 GA 170 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-SperrspannungVCES 1700 Vcollector-emitter voltageTC = 80 C IC,nom. 200 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 400 APeriodischer Kollektor Spitzens

FRM240D, FRM240R,FRM240H16A, 200V, 0.24 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 16A, 200V, RDS(on) = 0.24TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)

FRM234D, FRM234R,FRM234H7A, 250V, 0.70 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 7A, 250V, RDS(on) = 0.70TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)

FRM230D, FRM230R,FRM230H8A, 200V, 0.50 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 8A, 200V, RDS(on) = 0.50TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)

FRM244D, FRM244R,FRM244H12A, 250V, 0.400 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 12A, 250V, RDS(on) = 0.400TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)

IRFM250DMECHANICAL DATANCHANNELDimensions in mm (inches)POWER MOSFETVDSS 200VID(cont) 27.4A RDS(on) 0.100 FEATURES NCHANNEL MOSFET

SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS12M2A High Voltage Hermetic TO-257AB Isolated Metal Package Ideally suited for Power Linear, Switching and general Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO Collector Base Voltage 100V VCEO Collector Emitter Voltage 100V VEBO E

SGM2014AMPreliminaryGaAs N-channel Dual Gate MES FETDescriptionThe SGM2014AM is an N-channel dual gate GaAsMES FET for UHF band low-noise amplification.This FET is suitable for a wide range of applicationsincluding TV tuners, cellular radios, and DBS IFamplifiers.Features Low voltage operation Low noise: NF = 1.5dB (typ.) at 900MHz High gain: Ga = 18dB (typ.) at

SGM2016ANGaAs N-channel Dual-Gate MES FETDescriptionM-281The SGM2016AN is an N-channel dual-gate GaAsMES FET for UHF-band low-noise amplification. ThisFET is suitable for a wide range of applicationsincluding UHF TV tuners, cellular/cordless phone,and DBS IF amplifiers.Features Ultra-small package Low voltage operation Low noise NF = 1.2dB (typ.) at 900MHz

SGM2014ANPreliminaryGaAs N-channel Dual Gate MES FETDescriptionM-281The SGM2014AN is an N-channel dual gate GaAsMES FET for UHF band low-noise amplification.This FET is suitable for a wide range of applicationsincluding TV tuners, cellular radios, and DBS IFamplifiers.Features Ultra small package Low voltage operation Low noise: NF = 1.5dB (typ.) at 900MHz

M28ST 1A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURE High DC Current Gain and Large Current Capability CLASSIFICATION OF hFE (1) Product-Rank M28ST-B M28ST-C M28ST-D Range 300~550 500~700 650~1000 Collector 1Emitter 1112 2Collector 2223Base

SUM2153 0.81A , 20V , RDS(ON) 310 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SOT-363 These miniature surface mount MOSFETs utilize a high Acell density trench process to provide low RDS(on) and to E Lensure minimal power loss and heat dissipation

M28S 1A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-23 Excellent hFE Linearity A High DC Current Gain L33Top ViewC BCLASSIFICATION OF hFE 11 2Product-Rank M28S-B M28S-C M28S-D 2K ERange 300~550 500~700 650~1000 DMarking 28S Collector H

SGM2306A5A, 30V,RDS(ON) 35m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductDescriptionSOT-89The SGM2306A utilized advanced processing techniques toachieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.The SGM2306A is universally used for all commercial-industrial surface mount applications.

SGM2310A 5 A, 60 V, RDS(ON) 115 m N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 DESCRIPTION AThe SGM2310A utilized advanced processing techniques to 4achieve the lowest possible on-resistance, extremely efficient Top ViewC Band cost-effectiveness device. The SGM231

SGM2305A -3.2 A, -30 V, RDS(ON) 80 m P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES A The SGM2305A provide the designer with best combination of fast switching, 4Top ViewC Blow on-resistance and cost-effectiveness. The SGM2305A is universally preferred

TSM240N03CX 30V N-Channel Power MOSFET SOT-23 Key Parameter Performance Pin Definition: 1. Gate Parameter Value Unit 2. Source 3. Drain VDS 30 V VGS = 10V 24 Note: RDS(on) (max) m MSL 1 (Moisture Sensitivity Level) VGS = 4.5V 34 per J-STD-020 Qg 4.1 nC Block Diagram Ordering Information Ordering code Package Packing TSM240N03CX RFG SOT-23 3kpcs /

TSM23N50CN 500V N-Channel Power MOSFET TO-3PN Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Drain 3. Source 500 0.22 @ VGS =10V 23 General Description The TSM23N50CN N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide

TSM2323 20V P-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Gate 39 @ VGS = -4.5V -4.7 2. Source 3. Drain -20 52 @ VGS = -2.5V -4.1 68 @ VGS = -1.8V -2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch P-Chann

TSM2311 20V P-Channel MOSFET SOT-23 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 55 @ VGS = -4.5V -4.0 -20 85 @ VGS = -2.5V -2.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch P-Channel MOSFET Orderi

TSM2301A Taiwan Semiconductor P-Channel Power MOSFET -20V, -2.8A, 130m KEY PERFORMANCE PARAMETERS Features PARAMETER VALUE UNIT Advance Trench Process Technology VDS -20 V High Density Cell Design for Ultra Low On-resistance VGS = -4.5V 130 RDS(on) (max) m VGS = -2.5V 190 Application Qg 7.2 nC Telecom power Consumer Electronics SOT-23

TSM2328 100V N-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 250 @ VGS =10V 1.5 100 General Description The TSM2328 utilized advanced processing techniques to achieve the lowest possible On-Resistance, extremely efficient and cost-effectiveness device. The TSM2328 is universally used for all commercial-in

TSM2314 20V N-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 33 @ VGS = 4.5V 4.9 40 @ VGS = 2.5V 4.4 20 100 @ VGS = 1.8V 2.9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Orderin

TSM2306 30V N-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Gate 2. Source 57 @ VGS =10V 3.5 3. Drain 30 94 @ VGS =4.5V 2.8 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No. Pa

TSM2N70 700V N-Channel Power MOSFET Pin Definition: TO-220 TO-251 TO-252 PRODUCT SUMMARY 1. Gate (IPAK) (DPAK) 2. Drain VDS (V) RDS(on)() ID (A) 3. Source 700 6.5 @ VGS =10V 1 General Description The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-st

TSM2310 20V N-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 33 @ VGS = 4.5V 4 3. Drain 20 40 @ VGS = 2.5V 3.2 100 @ VGS = 1.8V 2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Info

TSM2312 20V N-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Gate 2. Source 33 @ VGS = 4.5V 4.9 3. Drain 20 40 @ VGS = 2.5V 4.4 51 @ VGS = 1.8V 3.9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering In

TSM210N06 60V N-Channel Power MOSFET TO-220 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Drain 3. Source 60 3.1 @ VGS =10V 210 Features Block Diagram Advanced Trench Technology Low RDS(ON) 3.1m (Max.) Low gate charge typical @ 160nC (Typ.) Low Crss typical @ 300pF (Typ.) Ordering Information Part No. Package Packing

TSM2323 20V P-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Gate 2. Source 39 @ VGS = -4.5V -4.7 3. Drain -20 52 @ VGS = -2.5V -4.1 68 @ VGS = -1.8V -2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch P-C

TSM2302 20V N-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Gate 2. Source 65 @ VGS = 4.5V 2.8 3. Drain 20 95 @ VGS = 2.5V 2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No.

TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 TO-252 Pin Definition: PRODUCT SUMMARY (IPAK) (DPAK) 1. Gate 2. Drain VDS (V) RDS(on)() ID (A) 3. Source 600 4.4 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFE

TSM20N50 500V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 500 0.3 @ VGS =10V 18 General Description The TSM20N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, prov

TSM2307 30V P-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 95 @ VGS = -10V -3 -30 140 @ VGS = -4.5V -2 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No

TSM2308 60V N-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 156 @ VGS = 10V 3 60 192 @ VGS = 4.5V 2.1 Block Diagram Features Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application DC-DC Power System Load Switch Ordering Information

TSM2N60S 600V N-Channel Power MOSFET SOT-223 Pin Definition: PRODUCT SUMMARY 1. Gate 2. Drain VDS (V) RDS(on)() ID (A) 3. Source 600 5 @ VGS =10V 0.6 General Description The TSM2N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand

TSM2611ED 20V Dual N-Channel MOSFET w/ESD Protected SOT-26 Pin Definition: PRODUCT SUMMARY 1. Source 1 6. Gate 1 VDS (V) RDS(on)(m) ID (A) 2. Drain 1 5. Drain 2 3. Source 2 4. Gate 2 20 @ VGS = 4.5V 6 20 28 @ VGS = 2.5V 5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On resistance ESD Protected HBM

TSM2NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 600 4.4 @ VGS =10V 1 General Description The TSM2NB60 N-Channel Power MOSFET is TO-251 TO-252 (IPAK) (DPAK) produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resi

TSM2303 30V P-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 180 @ VGS =-10V -1.3 -30 300 @ VGS =-4.5V -1.1 Block Diagram Features Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Portable Devices High Speed Switch Ordering Info

TSM2301 20V P-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Gate 130 @ VGS = -4.5V -2.8 2. Source -20 3. Drain 190 @ VGS = -2.5V -2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch P-Channel MOSFET Orderi

TSM2302 20V N-Channel MOSFET SOT-23 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 65 @ VGS = 4.5V 2.8 20 95 @ VGS = 2.5V 2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No.

TSM2N7000K 60V N-Channel MOSFET TO-92 Pin Definition: PRODUCT SUMMARY 1. Source VDS (V) RDS(on)() ID (mA) 2. Gate 3. Drain 5 @ VGS = 10V 100 60 5.5 @ VGS = 5V 100 Features Block Diagram Low On-Resistance ESD Protection High Speed Switching Low Voltage Drive Ordering Information Part No. Package Packing TSM2N7000KCT B0 TO-92 1Kpcs / Bulk

TSM2N7002KD 60V N-Channel MOSFET SOT-363 PRODUCT SUMMARY Pin Definition: 1. Source 2 6. Drain 2 VDS (V) RDS(on)(m) ID (A) 2. Gate 2 5. Gate 1 3. Drain 1 4. Source 1 2 @ VGS = 10V 300 60 4 @ VGS = 4.5V 200 Features Block Diagram Low On-Resistance ESD Protection High Speed Switching Low Voltage Drive Ordering Information Part No. Package Pa

TSM2318 40V N-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 45 @ VGS = 10V 3.9 40 62.5 @ VGS = 4.5V 3.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch Stepper Motors Ordering Information Pa

TSM2N7002KCX Taiwan Semiconductor N-Channel Power MOSFET 60V, 300mA, 2 FEATURES KEY PERFORMANCE PARAMETERS Low On-Resistance PARAMETER VALUE UNIT ESD Protected 2KV VDS 60 V High Speed Switching VGS = 10V 2 Low Voltage Drive RDS(on) (max) VGS = 4.5V 4 Qg 0.4 nC APPLICATION Logic Level translators DC-DC Converter SOT-23 Note

TSM2305 20V P-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 55 @ VGS =-4.5V -3.2 80 @ VGS =-2.5V -2.7 -20 130 @ VGS =-1.8V -2.0 Block Diagram Features Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Battery Management High Spe

TSM2N7002K 60V N-Channel MOSFET SOT-23 SOT-323 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (mA) 2. Source 3. Drain 2 @ VGS = 10V 300 60 4 @ VGS = 4.5V 200 Features Block Diagram Low On-Resistance ESD Protected 2KV High Speed Switching Low Voltage Drive Ordering Information Part No. Package Packing TSM2N7002KCX RF SOT-23

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 M28S TRANSISTOR (NPN) 1.EMITTER FEATURES 2.COLLECTOR High DC Current Gain and Large Current Capability 3.BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbo Parameter Value UnitVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Sustaining Voltage 20 V VEBO

SEMICONDUCTORFM200CD1D5BTECHNICAL DATA150V / 200A(Common-Drain)2-PACK MOSFET MODULE FEATURES Low RDS(on)High frequency operationdv/dt ruggednessFast switchingAPPLICATION Battery Management SystemElectric VehicleOUTLINE DRAWINGINTERNAL CIRCUITUnit : mm_ _ _13 0.3 13 0.3 13 0.3+ + +676711 35235424_ _23 0.3 23 0.3+ +

SEMICONDUCTORGM200HB12CTTECHNICAL DATA1200V/200A 2 IN ONE PACKAGETENTATIVEFEATURES IGBT New Technology Unit : mmOUTLINE DRAWINGLow VCE(sat)Low Turn-off losses _108.5 0.2+_6.5 0.2+_ _28 0.2 28 0.2+ +Short tail currentPositive temperature coefficientG2E2APPLICATION E1AC & DC Motor controlsG1M6General purpose invertersOptimize

SEMICONDUCTORFM200HB1D5BTECHNICAL DATA150V / 200A(Half - Bridge)2 - PACK MOSFET MODULE FEATURES Low RDS(on)High frequency operationdv/dt ruggednessFast switchingAPPLICATION Motor controlBattery management systemElectric vehicleUnit : mmOUTLINE DRAWINGINTERNAL CIRCUIT_ _ _13 0.3 13 0.3 13 0.3+ + +6 677 1 1 2 3 23545_ _+

APTC60SKM24CT1GVDSS = 600V Buck chopper RDSon = 24m max @ Tj = 25C Super Junction MOSFET ID = 95A @ Tc = 25C SiC chopper diode Application AC and DC motor control 115 6 Switched Mode Power Supplies Features Q1 - Ultra low RDSon 7- Low Miller capacitance NTC8- Ultra low gate charge 3- Avalanche energy rated 4- Very rugged CR2

APTM50AM24SCG Phase leg VDSS = 500V Series & SiC parallel diodes RDSon = 24m typ @ Tj = 25C ID = 150A @ Tc = 25C MOSFET Power Module Application Motor control VBUS Switched Mode Power Supplies Uninterruptible Power Supplies Features Q1 Power MOS 7 MOSFETs G1- Low RDSon OUT- Low input and Miller capacitance S1- Low gate charge - Aval

APTC60DAM24CT1GVDSS = 600V Boost chopper RDSon = 24m max @ Tj = 25C Super Junction MOSFET ID = 95A @ Tc = 25C Power Module Application AC and DC motor control 5 6 11 Switched Mode Power Supplies Power Factor Correction Features CR1 - Ultra low RDSon 3NTC- Low Miller capacitance 4Q2- Ultra low gate charge - Avalanche energy rated

APTC60AM24SCTG VDSS = 600V Phase leg RDSon = 24m max @ Tj = 25C Series & SiC parallel diodes ID = 95A @ Tc = 25C Super Junction MOSFET Power Module Application Motor control Switched Mode Power Supplies Uninterruptible Power Supplies NTC2VBUSFeatures Q1- Ultra low RDSon - Low Miller capacitance G1- Ultra low gate charge OUT- Aval

M28 STRANSISTOR(NPN)SOT23 FEATURES Excellent hFE Linearity High DC Current Gain MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 40 V CBO 3. COLLECTOR V Collector-Emitter Voltage 20 V CEOVEBO Emitter-Base Voltage 6 V I Collector Current 1 A CP Collector Power Dissipation 200 mW

CEM2133P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-20V, -10A, RDS(ON) = 18m @VGS = -4.5V. RDS(ON) = 27m @VGS = -2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead-free plating ; RoHS compliant.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA =

CEM2182N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES20V, 9.3A, RDS(ON) = 18m @VGS = 4.5V. RDS(ON) = 24m @VGS = 2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead-free plating ; RoHS compliant.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25

CEM26138Dual N-Channel Enhancement Mode Field Effect TransistorPRELIMINARYFEATURES30V, 7.6A, RDS(ON) = 22m @VGS = 10V. RDS(ON) = 33m @VGS = 4.5V.20V, 6A, RDS(ON) = 27m @VGS = 4.5V. RDS(ON) = 40m @VGS = 2.5V.D1 D1 D2 D2Super high dense cell design for extremely low RDS(ON).8 7 6 5High power and current handing capability.Lead-free plating ; RoHS compliant.Su

CEM2187P-Channel Enhancement Mode Field Effect TransistorFEATURES-20V, -7.6A, RDS(ON) = 22m @VGS = -4.5V. RDS(ON) = 32m @VGS = -2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired. D1 D1 D2 D28 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS TA = 25 C unle

CEM2163P-Channel Enhancement Mode Field Effect TransistorFEATURES-20V, -8.9A, RDS(ON) = 20m @VGS = -4.5V. RDS(ON) = 30m @VGS = -2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless oth

CEM2281P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-20V, -7.2A, RDS(ON) = 30m @VGS = -4.5V. RDS(ON) = 43m @VGS = -2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25

CEM2939Dual Enhancement Mode Field Effect Transistor (N and P Channel)FEATURES520V, 6.5A, RDS(ON) = 30m @VGS = 4.5V. RDS(ON) = 43m @VGS = 2.5V.-20V, -4.8A, RDS(ON) = 55m @VGS = -4.5V. RDS(ON) = 90m @VGS = -2.5V.Super high dense cell design for extremely low RDS(ON).D1 D1 D2 D2High power and current handing capability.8 7 6 5Lead free product is acquired.Sur

CEM2401P-Channel Enhancement Mode Field Effect TransistorFEATURES-20V, -6A, RDS(ON) = 44m @VGS = -4.5V. RDS(ON) = 65m @VGS = -2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless other

CEM2192Dual N-Channel Enhancement Mode Field Effect TransistorPRELIMINARYFEATURES20V, 8A, RDS(ON) = 24m @VGS = 4.5V. RDS(ON) = 35m @VGS = 2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead-free plating ; RoHS compliant.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA

CEM2539Dual Enhancement Mode Field Effect Transistor (N and P Channel)FEATURESD1 D2520V, 7.5A, RDS(ON) = 22m @VGS = 10V. RDS(ON) = 24m @VGS = 4.5V.*1KG1 G2 RDS(ON) = 33m @VGS = 2.5V.-20V, -4.0A, RDS(ON) = 80m @VGS = -10V. RDS(ON) = 100m @VGS = -4.5V.S1 S2 RDS(ON) = 150m @VGS = -2.5V.D1 D1 D2 D28 7 6 5Super high dense cell design for extremely lo

CEM2539ADual Enhancement Mode Field Effect Transistor (N and P Channel)FEATURESD1 D2520V, 7.5A, RDS(ON) = 22m @VGS = 10V. RDS(ON) = 25m @VGS = 4.5V.G1 G2 RDS(ON) = 40m @VGS = 2.5V.-20V, -4A, RDS(ON) = 80m @VGS = -10V. RDS(ON) = 100m @VGS = -4.5V.S1 S2 RDS(ON) = 150m @VGS = -2.5V.D1 D1 D2 D28 7 6 5Super high dense cell design for extremely low RDS(

CEM2407P-Channel Enhancement Mode Field Effect TransistorFEATURES-20V, -5.3A, RDS(ON) = 45m @VGS = -4.5V. RDS(ON) = 65m @VGS = -2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired. D1 D1 D2 D28 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS TA = 25 C unle

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GMM28SFEATURESFEATURES FEATURESHigh hFE NPN silicon NPN MAXIMUM RATINGS (Ta=25 )MAXIMUM RATINGS (Ta=25)MAXIMUM RATINGS (Ta=25 )CHARACTERISTIC Symbol

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM2302SOT-23 (SOT-23 Field Effect Transistors)N-Channel Enhancement-Mode MOS FETsN-Channel Enhancement-Mode MOS FETsN-Channel Enhancement-Mode MOS FET

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM2301SOT-23 (SOT-23 Field Effect Transistors)P-Channel Enhancement-Mode MOS FETsP-Channel Enhancement-Mode MOS FETsP-Channel Enhancement-Mode MOS FET

WTM2222ANPN Epitaxial Planar TransistorsSOT-89P b Lead(Pb)-Free121. BASEFeatures:32. COLLECTOR3. EMITTER* Low Collector Saturation Voltage* High Speed Switching* For Complementary Use With PNP Type WTM2907AABSOLUTE MAXIMUM RATINGS (TA=25C)Rating Symbol Limits UnitVCBO VCollector-Base Voltage75VCEOVCollector-Emitter Voltage 40VEBOVEmitter-Base Vo

WTM2310AN-Channel Enhancement 3 DRAINMode Power MOSFET DRAIN CURRENT5.0 AMPERESP b Lead(Pb)-FreeDRAIN SOUCE VOLTAGE160 VOLTAGEGATEFeatures:2 SOURCE* Simple Drive Requirement.* Super High Density Cell Design for Extremely Low RDS(ON).1231. GATE2. DRAIN3. SOURCESOT-89Maximum Ratings (TA=25C Unless Otherwise Specified)Rating Symbol Value UnitVDS VD

WTM2907APNP Epitaxial Planar TransistorsSOT-89P b Lead(Pb)-Free121. BASE32. COLLECTORFeatures:3. EMITTER* Low Collector Saturation Voltage* High Spwwd Switching* For Complementary Use With NPN Type WTM2222AABSOLUTE MAXIMUM RATINGS (TA=25C)Rating Symbol Limits UnitVCBO VCollector-Base Voltage-60VCEOVCollector-Emitter Voltage -60VEBOVEmitter-Base

WNM2046BWNM2046BSingle N-Channel, 20V, 0.71A, Power MOSFET Http://www.sh-willsemi.comGVDS (V) Typical Rds(on) ()S0.220@ VGS=4.5VD20 0.260@ VGS=2.5V0.315@ VGS=1.8VDFN1006-3LDescriptionsThe WNM2046B is N-Channel enhancement MOSField Effect Transistor. Uses advanced trenchDtechnology and design to provide excellent RDS (ON)with low gate charge. This device is suit

WPM2006WPM2006Power MOSFET and Schottky DiodeFeatures Featuring a MOSFET and Schottky Diode Independent Pinout to each Device to Ease Circuit Design Ultra Low VF SchottkyDFN2*2 -6LApplications Li--Ion Battery Charging High Side DC-DC Conversion Circuits High Side Drive for Small Brushless DC Motors Power Management in Portable, Battery Powered Products1

WCM2079WCM2079N- and P-Channel Complementary, 20V,MOSFET http://www.sh-willsemi.comV (V) Typical R ()DS DS(on)N-Channel 0.020@V =10VGS20 0.023@V =4.5VGS(4)(3)0.028@V =-10VP-Channel GS(2)-20 0.035@V =-4.5V (1)GSSOP-8LDescriptionsThe WCM2079 is the N-Channel and P-Channelenhancement MOS Field Effect Transistor as asingle package for DC-DC converter or le

WCM2007 WCM2007 N- and P-Channel, 20V, MOSFET Http://www.sh-willsemi.com V(BR)DSS RDS(on) Typical. () 0.18@ 4.5V N-Channel 0.23@ 2.5V 20 V 0.30@ 1.8V ESD protection 0.45@-4.5V P-Channel 0.60@ -2.5V -20 V 0.75@ -1.8V SOT-563 ESD protection Descriptions D1 G2 S26 5 4The WCM2007 is the N- and P-Channel enhancement MOS Field Effect Transistor as a singl

WPM2014WPM2014Single P-Channel, -20V, -4.9A, Power MOSFET Http//:www.sh-willsemi.comVDS (V) Rds(on) ()0.050 @ VGS=4.5V-20 0.063 @ VGS=2.5V0.074 @ VGS=1.8VDFN2x2-6LDescriptionsD DS6 5 4The WPM2014 is P-Channel enhancement MOS DField Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)Swith low gate charge. This

WNM2046C WNM2046C Single N-Channel, 20V, 0.6A, Power MOSFET Http://www.willsemi.com GV (V) Typical R () DS DS(on)SD0.42 @ V =4.5V GS 20 0.58 @ V =2.5V GS0.84 @ V =1.8V GS DFN1006-3L Descriptions DThe WPM2046C is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS(ON)with low gate char

WNM2024 WNM2024 Single N-Channel, 20V, 3.9A, Power MOSFET Http://www.sh-willsemi.com VDS (V) Rds(on) ()0.027@ VGS=4.5V20 0.031@ VGS=2.5V0.036@ VGS=1.8VSOT-23 Descriptions D 3 The WNM2024 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for us

WPM2048 WPM2048 Single P-Channel, -20V, -2.2A, Power MOSFET www.sh-willsemi.com VDS (V) Rds(on) (m) 96@ VGS=-4.5V -20 135@ VGS=-2.5V SOT-23 Descriptions D 3 The WPM2048 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conver

WNM2046WNM2046Single N-Channel, 20V, 0.71A, Power MOSFET Http://www.sh-willsemi.com(1)(2)GVDS (V) Typical Rds(on) ()S0.220@ VGS=4.5V (3)D20 0.260@ VGS=2.5V0.315@ VGS=1.8VDFN1006-3LDescriptions(3)The WNM2046 is N-Channel enhancement MOSField Effect Transistor. Uses advanced trenchDtechnology and design to provide excellent RDS (ON)with low gate charge. Thi

WNM2072WNM2072Single N-Channel, 20V, 0.71A, Power MOSFET Http://www.sh-willsemi.comGVDS (V) Typical Rds(on) ()S0.220@ VGS=4.5VD20 0.260@ VGS=2.5V0.315@ VGS=1.8VESD ProtectedDFN1006-3LDescriptionsThe WNM2072 is N-Channel enhancement MOSField Effect Transistor. Uses advanced trenchDtechnology and design to provide excellent RDS (ON)with low gate charge. This de

WPM2015WPM2015Http://www.sh-willsemi.com Single P-Channel, -20V, -2.4A, Power MOSFET VDS (V) Rds(on) ( ) 0.081@ VGS= 4.5V-200.103@ VGS= 2.5VSOT-23 DescriptionsD3The WPM2015 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use 12in DC-D

WPM2087 WPM2087 Single P-Channel, -20V, -4.3A, Power MOSFET Http://www.sh-willsemi.com VDS (V) Typical RDS(on) (m) 34@ V =-4.5V GS-20 39 @ V =-3.1V GS45 @ V =-2.5V GS SOT-23 Descriptions D 3 The WPM2087 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS(ON)with low gate charge. This dev

WPM2031 WPM2031 Single P-Channel, -20V, -0.65A, Power MOSFET Http://www.sh-willsemi.com VDS (V) Rds(on) () 0.495@ VGS=4.5V D -20 0.665@ VGS=2.5V S0.882@ VGS=1.8V GESD Protected SOT-723 Descriptions D The WPM2031 is P-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low

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WNM2030 WNM2030 Http://www.sh-willsemi.com Single N-Channel, 20V, 0.95A, Power MOSFET DVDS (V) Rds(on) ( ) 0.210@ VGS=4.5V S G20 0.250@ VGS=2.5V SOT-723 0.305@ VGS=1.8V ESD Protected Descriptions D3The WNM2030 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) 12with low gate ch

WPM2019 WPM2019 Http://www.sh-willsemi.com Single P-Channel, -20V, -0.73A, Power MOSFET VDS (V) Rds(on) ( )D0.480@ VGS= 4.5V-20 0.620@ VGS= 2.5VS0.780@ VGS= 1.8VGSOT-523 DescriptionsThe WPM2019 is P-Channel enhancement MOS D3Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is sui

WCM2001WCM2001N- and P-Channel Complementary, 20V, MOSFET Http://www.willsemi.com V(BR)DSS RDS(on) Typ. ( m )180 @ 4.5V N-Channel 225 @ 2.5V20 V 280 @ 1.8V85 @ -4.5V P-Channel 110 @ -2.5V-20 V 150 @ -1.8VD1 G2 S26 5 4DescriptionsThe WCM2001 is the N- and P-Channel enhancement MOS Field Effect Transistor as a single 1 2 3package for DC-DC converter or Lo

WPM2083 WPM2083 Single P-Channel, -20V, -2.4A, Power MOSFET Http://www.sh-willsemi.com VDS (V) Typical RDS(on) (m) DDDD81 @ VGS=-4.5V -20 SSSS110 @ VGS=-2.5V GGGGSOT-23 Descriptions D 3 The WPM2083 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate char

WPM2037WPM2037Single P-Channel, -20V, -3.6A , Power MOSFET Http//:www.willsemi.com VDS (V) Rds(on) ( )0.047@ VGS= 4.5V-20 0.060@ VGS= 2.5V0.076@ VGS= 1.8VSOT-23-6L DescriptionsSD DThe WPM2037 is P-Channel enhancement MOS 6 5 4Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitabl

WPM2009DWPM2009D-20V, -4A, 42m, 2.0W, DFN3x3, P-MOSFET Http://www.willsemi.com BottomDescriptions This single P-Channel MOSFET is produced using trench process that provides minimum on resistance performance. WPM2009D isenhancement power MOSFET with 2.0W power DFN3x3-8L dissipation mounting 1 in2 pad in a DFN3x3 package. This device is suited for high power charging cir

WPM2005BWPM2005BPower MOSFET and Schottky DiodeFeaturesDFN32-8L Featuring a MOSFET and Schottky Diode Independent Pinout to each Device to Ease Circuit Design Ultra Low VF SchottkyApplications Li--Ion Battery Charging High Side DC-DC Conversion Circuits High Side Drive for Small Brushless DC Motors Power Management in Portable, Battery Powered ProductsMOS

WNM2020WNM2020Http://www.sh-willsemi.com N-Channel, 20V, 0.90A, Small Signal MOSFET VDS (V) Rds(on) ( )D0.220@ VGS=4.5V20 0.260@ VGS=2.5VS0.320@ VGS=1.8VGSOT-23 DescriptionsThe WNM2020 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) Dwith low gate charge. This device is suitable for

WCM2068WCM2068N- and P-Channel Complementary, 20V,MOSFET Http://www. sh- willsemi.comVDS (V) Typical RDS(on) ()0.033@ VGS=4.5VN-Channel0.037@ VGS=3.3V200.041@ VGS=2.5V0.085@VGS=- 4.5VP-ChannelSOT-23-6L0.097@VGS= -3.3V-200.110@VGS= -2.5VDescriptionsThe WCM2068 is the N-Channel andP-Channel enhancement MOS Field EffectTransistor as a single package for DC-DC

WPM2341WPM2341P-Channel Enhancement Mode MosfetHttp://www.sh-willsemi.com Features Higher Efficiency Extending Battery Life Miniature SOT23-3 Surface Mount Package3 Super high density cell design for extremely low RDS (ON) 12Applications DC/DC Converter Load Switch SOT 23-3 Battery Powered System LCD Display inverter Power Management in Porta

WNM2077WNM2077Single N-Channel, 20V, 0.54A, Power MOSFET Http//:www.willsemi.comV (V) Rds(on) ()DS0.420@ V =4.5VGS20 0.580@ V =2.5VGSSOT-7230.840@ V =1.8VGSESD ProtectedDescriptionsD3The WNM2077 is N-Channel enhancement MOSField Effect Transistor. Uses advanced trenchtechnology and design to provide excellent RDS (ON)1 2with low gate charge. This devi

WPM2049WPM2049Single P-Channel, -20V, -0.51A, Power MOSFET Http://www.sh-willsemi.comGVDS (V) Typical Rds(on) ()S0.480@ VGS=-4.5VD-20 0.620@ VGS=-2.5V0.780@ VGS=-1.8VDFN1006-3LDescriptionsThe WPM2049 is P-Channel enhancement MOSField Effect Transistor. Uses advanced trenchDtechnology and design to provide excellent RDS (ON)with low gate charge. This device is s

WPM2065WPM2065Single P-Channel, -20V, -6.9A, Power MOSFET Http://www.sh-willsemi.comD D GV (V) Typical Rds(on) ()DS0.017@ V =-4.5VGSDS-200.022@ V =-2.5VGSD D S0.032@ V =-1.8VGSESD Rating: 4000V HBMDFN2X2-6LDescriptions1 6 DThe WPM2065 is P-Channel enhancement DMOS Field Effect Transistor. Uses advanced trenchD2 5 Dtechnology and design to provi

WNM2016WNM2016Http://www.sh-willsemi.com N-Channel, 20V, 3.2A, Power MOSFET VDS (V) Typical RDS(on) (m) D40 @ VGS=4.5V S20 47 @ VGS=2.5V 55 @ VGS=1.8V GSOT-23 DDescriptions3The WNM2016 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable

WNM2016A WNM2016ASingle N-Channel, 20V, 4.7A, Power MOSFET Http://www.sh-willsemi.com V (V) Typical R (m) DS DS(on)33@ V =4.5V GS39@ V =3.1V GS20 44@ V =2.5V GS66@ V =1.8V GSSOT-23 Description D3The WNM2016A is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS(ON)with low gate cha

WPM2341AWPM2341AP-Channel Enhancement Mode MosfetHttp://www.sh-willsemi.com Features Higher Efficiency Extending Battery Life Miniature SOT23-3 Surface Mount Package3 Super high density cell design for extremely low RDS (ON) 12Applications DC/DC Converter Load Switch SOT 23-3 Battery Powered System LCD Display inverter Power Management in Por

WPM2081 WPM2081 Single P-Channel, -20V, -3.2A, Power MOSFET Http://www.sh-willsemi.com VDS (V) Typical RDS(on) (m) DD43 @ VGS=-4.5V -20 SS55 @ VGS=-2.5V GGSOT-23 Descriptions D The WPM2081 is P-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is

WPM2026 WPM2026 Single P-Channel, -20V, -3.2A, Power MOSFET Http://www.sh-willsemi.com VDS (V) Rds(on) ( ) 0.056@ VGS= 4.5V -20 0.069@ VGS= 2.5V 0.086@ VGS= 1.8V SOT-23 Descriptions D The WPM2026 is P-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitab

WNM2021WNM2021Http://www.sh-willsemi.com N-Channel, 20V, 0.89A, Small Signal MOSFET VDS (V) Rds(on) ( ) 0.220@ VGS=4.5VD20 0.260@ VGS=2.5VS0.320@ VGS=1.8VGSOT-323 DescriptionsDThe WNM2021 is N-Channel enhancement MOS 3Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable

Spec. No. :HE9520 HI-SINCERITY Issued Date : 1997.06.18 Revised Date : 2007.04.17 MICROELECTRONICS CORP. Page No. : 1/4 HM2907A PNP EPITAXIAL PLANAR TRANSISTOR Description The HM2907A is designed for general purpose amplifier and high speed, medium-power switching applications. SOT-89 Features Low collector saturation voltage High speed switching For co

Spec. No. :HE9521 HI-SINCERITY Issued Date : 1997.06.18 Revised Date : 2008.08.04 MICROELECTRONICS CORP. Page No. : 1/5 HM2222A NPN EPITAXIAL PLANAR TRANSISTOR Description The HM2222A is designed for general purpose amplifier and high speed, medium-power switching applications. Features SOT-89 Low collector saturation voltage High speed switching For co

AOK50B65M2TM650V, 50A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 50A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 1.72V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencies

AOK30B65M2TM650V, 30A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 30A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 1.66V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencies

AOT10B65M2TM650V, 10A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest Alpha IGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 10A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 1.6V High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencies

AOK20B65M2TM650V, 20A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 20A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 1.7V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencies

AOTF5B65M2TM650V, 5A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltage IC (TC=100 5AC) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.57VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficienci

AOTF15B65M2TM650V, 15A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT(IGBT) technology 650V 650V breakdown voltage IC (TC=100 15AC) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.7VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficienc

AOTF10B65M2TM650V, 10A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT(IGBT) technology 650V 650V breakdown voltageIC (TC=100 10AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.6VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencies

AOTF20B65M2TM650V, 20A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 20AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.7VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencie

Analog Power AM2321PEP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.079 @ VGS = -4.5V -4.1-20battery-powered product

Analog Power AM90N06-04m2BN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)4.2 @ VGS = 10V Low thermal impedance 6090a4.8 @ VGS = 4.5V Fast switching speed Typical Applications: Automotive Systems DC/DC Conversion Circuits Battery Powered Power Tools ABSOLUTE MAXIMUM RATINGS

Analog Power AM20N10-250DEN-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m) ID (A)(rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 280 @ VG = 10V 11Sconverters and power management in portable and 100355 @ VG = 4.5V

Analog Power AM2392NN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) ()VDS (V) ID(A) Low r trench technology DS(on)1.2 @ VGS = 10V0.9 Low thermal impedance 1501.4 @ VGS = 5.5V0.8 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU

Analog Power AM2320NEN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)18 @ VGS = 4.5V7.0 Low thermal impedance 2021 @ VGS = 2.5V6.5 Fast switching speed SOT-23 Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUT

Analog Power AM20P10-250DP-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC 295 @ VGS = -10V 11converters and power management in portable and -100battery-powered prod

Analog Power AM2308NEN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)60 @ VGS = 4.5V3.5 Low thermal impedance 3082 @ VGS = 2.5V3.0 Fast switching speed Typical Applications: Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIMUM RATINGS (TA

Analog Power AM20P06-135DP-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC 135 @ VGS = -10V 16converters and power management in portable and -60battery-powered produc

Analog Power AM2391PP-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) ()VDS (V) ID(A) Low r trench technology DS(on)1.2 @ VGS = -10V -0.9 Low thermal impedance -1501.3 @ VGS = -4.5V -0.8 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost c

Analog Power AM2341PP - Channel 40V (D-S) MOSFETThese miniature surface mount MOSFETs utilize High Cell Density process. Low PRODUCT SUMMARYrDS(on) assures minimal power loss and conserves energy, making this device ideal VDS (V) rDS(on) ()ID (A)for use in power management circuitry. 0.082 @ VGS = -10 V -3.2Typical applications are lower voltage -40application, power

Analog Power AM2305PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)43 @ VGS = -4.5V -4.5 Low thermal impedance -20 54 @ VGS = -2.5V -4.1 Fast switching speed 120 @ VGS = -1.8V -2.7Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Ci

Analog Power AM2314NN-Channel 20V (D-S) MOSFETThese miniature surface mount MOSFETsutilize High Cell Density process. Low rDS(on)PRODUCT SUMMARYassures minimal power loss and conserves VDS (V) rDS(on) ()ID (A)energy, making this device ideal for use in 0.032 @ VGS = 4.5 V 4.6power management circuitry. Typical 20applications are power switch, power 0.044 @ VGS = 2.5V

Analog Power AM2339PP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)57 @ VGS = -4.5V -3.9 Low thermal impedance -3089 @ VGS = -2.5V -3.2 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIM

Analog Power AM2313PP - Channel Logic Level MOSFETThese miniature surface mount MOSFETs PRODUCT SUMMARYutilize High Cell Density process. Low VDS (V) rDS(on) ()ID (A)rDS(on) assures minimal power loss and conserves energy, making this device ideal 10 @ VGS = -10 V -0.2-60for use in power management circuitry. 20 @ VGS = -4.5V -0.12Typical applications are voltage contro

Analog Power AM2325PP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to PRODUCT SUMMARYprovide low rDS(on) and to ensure minimal VDS (V) rDS(on) (OHM) ID (A)power loss and heat dissipation. Typical 0.055 @ VGS = -4.5V -3.6applications are DC-DC converters and power management in portable and -200.089 @ VGS = -2.5V

Analog Power AM2306NN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m()ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 58 @ VGS = 10V 3.5circuitry. Typical applications are PWMDC-DC 30converters, power management in p

Analog Power AM20P02-60DP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARYminimal power loss and conserves energy, making VDS (V) rDS(on) m()ID (A)this device ideal for use in power management circuitry. Typical applications are PWMDC-DC 59 @ VGS = -4.5V 24-20converters, power management in

Analog Power AM2300NN-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs PRODUCT SUMMARYutilize High Cell Density process. Low rDS(on)assures minimal power loss and conserves VDS (V) rDS(on) ()ID (A)energy, making this device ideal for use in 0.035 @ VGS = 4.5V 4.320power management circuitry. Typical 0.050 @ VGS = 2.5V 3.5applications are DC-DC converters,

Analog Power AM2344NN-Channel 40-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)26 @ VGS = 10V5.8 Low thermal impedance 4035 @ VGS = 4.5V5.0 Fast switching speed SOT-23 Typical Applications: Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIMUM RATI

Analog Power AM2308NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)60 @ VGS = 4.5V3.8 Low thermal impedance 3082 @ VGS = 2.5V3.3 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

Analog Power AM2334NEN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)60 @ VGS = 4.5V3.5 Low thermal impedance 3082 @ VGS = 2.5V3.0 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

Analog Power AM2398NN-Channel 60V (D-S) MOSFETThese miniature surface mount MOSFETsutilize High Cell Density process. Low rDS(on)PRODUCT SUMMARYassures minimal power loss and conserves VDS (V) rDS(on) ()ID (A)energy, making this device ideal for use in 0.194 @ VGS = 10 V 2.2power management circuitry. Typical 60applications are power switch, power 0.273 @ VGS = 4.5V 1

Analog Power AM20P15-295DP-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)295 @ VGS = -10V -10.7 Low thermal impedance -150580 @ VGS = -5.5V -7.6 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOL

Analog Power AM2305PEP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)43 @ VGS = -4.5V -4.5 Low thermal impedance -20 54 @ VGS = -2.5V -4.1 Fast switching speed 120 @ VGS = -1.8V -2.7Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion C

Analog Power AM2314NEN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)32 @ VGS = 4.5V5.3 Low thermal impedance 2044 @ VGS = 2.5V4.5 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

Analog Power AM2359PEP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)700 @ VGS = -10V -1.2 Low thermal impedance -60800 @ VGS = -4.5V -1.1 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MA

Analog Power AM2303PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low VDS (V) rDS(on) (OHM) ID (A)rDS(on) and to ensure minimal power loss and heat 0.100 @ VGS = -4.5V -2.9dissipation. Typical applications are DC-DC converters and power management in portable and -20 0.160 @ VGS = -2.5V -

Analog Power AM2328NN-Channel 20V (D-S) MOSFETThese miniature surface mount MOSFETsutilize High Cell Density process. Low rDS(on)PRODUCT SUMMARYassures minimal power loss and conserves VDS (V) rDS(on) ()ID (A)energy, making this device ideal for use in 0.025 @ VGS = 4.5 V 5.9power management circuitry. Typical 20applications are power switch, power 0.035 @ VGS = 2.5V

Analog Power AM2340NN-Channel 40-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)43 @ VGS = 10V5.2 Low thermal impedance 4064 @ VGS = 4.5V3.7 Fast switching speed Typical Applications: SOT-23 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE

Analog Power AM20P15-160DP-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)160 @ VGS = -10V -15 Low thermal impedance -150173 @ VGS = -5.5V -14 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUT

Analog Power AM20N10-350DN-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)420 @ VGS = 10V9.0 Low thermal impedance 100460 @ VGS = 5.5V8.6 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE

Analog Power AM2345PP - Channel 40V (D-S) MOSFETThese miniature surface mount MOSFETsutilize a high cell density trench process to PRODUCT SUMMARYprovide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical VDS (V) rDS(on) (O) ID (A)applications are DC-DC converters and 0.164 @ V = -10 V -3.2GSpower management in portable and -40battery-powered pr

Analog Power AM2342NN-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m(O) ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 86 @ V = 10V 5.2GSconverters and power management in portable and 40battery-powered products s

Analog Power AM2343PP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)57 @ VGS = -10V -3.9 Low thermal impedance -3089 @ VGS = -4.5V -3.2 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU

Analog Power AM2358NN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)92 @ VGS = 10V3.1 Low thermal impedance 60107 @ VGS = 4.5V2.9 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

Analog Power AM20P03-60DP-Channel 32-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 59 @ VGS = -10V 24-32battery-powered products s

Analog Power AM2307PEP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYrDS(on) (m)VDS (V) ID(A)31 @ VGS = -4.5V -5.2Key Features: 44 @ VGS = -2.5V -4.4 Low r trench technology DS(on)-2056 @ VGS = -1.8V -3.9 Low thermal impedance 83 @ VGS = -1.5V -3.2 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Indust

Analog Power AM2394NEN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)1200 @ VGS = 10V0.9 Low thermal impedance 1501300 @ VGS = 4.5V0.8 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MA

Analog Power AM2328NEN-Channel 20V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.022 @ VGS = 4.5 V 6.5battery-powered products su

Analog Power AM20N10-115DN-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)115 @ VGS = 10V17 Low thermal impedance 100135 @ VGS = 4.5V16 Fast switching speed Typical Applications: LED Inverter Circuits DC/DC Conversion Circuits Motor drives ABSOLUTE MAXIMUM RATINGS (TA = 2

Analog Power AM2302NEN-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to PRODUCT SUMMARYprovide low rDS(on) and to ensure minimal VDS (V) rDS(on) () ID (A)power loss and heat dissipation. Typical applications are DC-DC converters and 0.076 @ VGS = 4.5V 3.420power management in portable and 0.103 @ VGS = 2.5V 2

Analog Power AM20N15-250BN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)200 @ VGS = 10V Low thermal impedance 15021a225 @ VGS = 5.5V Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIM

Analog Power AM2343PEP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)57 @ VGS = -10V -3.9 Low thermal impedance -3089 @ VGS = -4.5V -3.2 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI

Analog Power AM2301PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)130 @ VGS = -4.5V -2.6 Low thermal impedance -20190 @ VGS = -2.5V -2.2 Fast switching speed SOT-23 Typical Applications: Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLE

Analog Power AM2371PP-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features:rDS(on) ()VDS (V) ID(A) Low r trench technologyDS(on)1.2 @ VGS = -10V -1 Low thermal impedance-1001.3 @ VGS = -4.5V -0.9 Fast switching speedTypical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost converters

Analog Power AM2390NN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) ()VDS (V) ID(A) Low r trench technology DS(on)0.7 @ VGS = 10V1.1 Low thermal impedance 1501.2 @ VGS = 4.5V0.8 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost conv

Analog Power AM2301PEP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.130 @ VGS = -4.5V -2.6-20battery-powered product

Analog Power AM2334NN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 60 @ VGS = 4.5V 3.5converters and power management in portable and 30battery-powered products s

Analog Power AM20N15-250DN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)255 @ VGS = 10V12 Low thermal impedance 150290 @ VGS = 4.5V11 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost

Analog Power AM2330NEN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC 32 @ VGS = 10V 5.2converters and power management in portable and 30battery-powered products suc

Analog Power AM20N06-90IN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)94 @ VGS = 10V19 Low thermal impedance 60109 @ VGS = 4.5V18 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU

Analog Power AM2345PEP - Channel 40V (D-S) MOSFETThese miniature surface mount MOSFETsutilize a high cell density trench process to PRODUCT SUMMARYprovide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical VDS (V) rDS(on) ()ID (A)applications are DC-DC converters and 0.164 @ VGS = -10 V -3.2power management in portable and -40battery-powered pr

Analog Power AM20N06-90DN-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m() ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 94 @ VGS = 10V 19circuitry. Typical applications are PWMDC-DC 60109 @ VGS = 4.5V 18converters

Analog Power AM2310NN-Channel Logic Level MOSFETThese miniature surface mount MOSFETs PRODUCT SUMMARYutilize High Cell Density process. Low rDS(on) assures minimal power loss and VDS (V) rDS(on) ()ID (A)conserves energy, making this device ideal 0.065 @ VGS = 4.5V 2.2for use in power management circuitry. 300.082 @ VGS = 2.5V 2.0Typical applications are lower voltage

Analog Power AM20N20-125DN-Channel 200-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 260 @ VGS = 10V 12converters and power management in portable and 200300 @ VGS = 5.5V 11

Analog Power AM2360NN-Channel 55V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) () ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.160 @ VGS = 4.5 V 2.4battery-powered products su

Analog Power AM20P06-175IP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)175 @ VGS = -10V -14 Low thermal impedance -60200 @ VGS = -4.5V -13 Fast switching speed Typical Applications: TO-251 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits

Analog Power AM2336NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)32 @ VGS = 4.5V5.3 Low thermal impedance 3064 @ VGS = 2.5V3.7 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

Analog Power AM2337PP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)112 @ VGS = -4.5V -2.8 Low thermal impedance -30172 @ VGS = -2.5V -2.3 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAX

Analog Power AM2359PP-Channel -60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)381 @ VGS = -10V -1.6 Low thermal impedance -60561 @ VGS = -4.5V -1.3 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAX

Analog Power AM20N10-250DN-Channel 100-V (D-S) MOSFET PRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)280 @ VGS = 10V11 Low thermal impedance 100355 @ VGS = 4.5V10 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost

Analog Power AM2304NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)12 @ VGS = 10V8.5 Low thermal impedance 3018 @ VGS = 4.5V7.0 Fast switching speed Typical Applications: Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIMUM RATINGS (TA =

Analog Power AM2374NN-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)92 @ VGS = 10V3.1 Low thermal impedance 10099 @ VGS = 4.5V3.0 Fast switching speed Typical Applications: SOT-23 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE

Analog Power AM25P03-60DP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARYminimal power loss and conserves energy, making VDS (V) rDS(on) m()ID (A)this device ideal for use in power management circuitry. Typical applications are PWMDC-DC 59 @ VGS = -4.5V 24-26.5converters, power management

Analog Power AM20P02-99DP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARYminimal power loss and conserves energy, making VDS (V) rDS(on) (m)ID (A)this device ideal for use in power management circuitry. Typical applications are PWMDC-DC 118 @ VGS = -4.5V 17-20converters, power management i

Analog Power AM2324NN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYThese miniature surface mount MOSFETs utilize a high cell density trench process to VDS (V) rDS(on) () ID (A)provide low rDS(on) and to ensure minimal 0.047 @ VGS = 4.5V 4.3power loss and heat dissipation. Typical 200.055@ VGS = 2.5V 4.0applications are DC-DC converters and power management in portable and

Analog Power AM2361PP-Channel -60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)210 @ VGS = -10V -3.4 Low thermal impedance -60250 @ VGS = -4.5V -2.8 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAX

Analog Power AM2362NN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)27 @ VGS = 10V5.7 Low thermal impedance 6033 @ VGS = 4.5V5.2 Fast switching speed Typical Applications: SOT-23 DC/DC Conversion Circuits Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTHERWISE NOTED)

Analog Power AM2319PP - Channel Logic Level MOSFETThese miniature surface mount MOSFETs utilize High Cell Density process. Low PRODUCT SUMMARYrDS(on) assures minimal power loss and VDS (V) rDS(on) ()ID (A)conserves energy, making this device ideal for use in power management circuitry. 0.20 @ VGS = -10 V -2.1-30Typical applications are voltage control 0.30 @ VGS = -4.

Analog Power AM2318NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)160 @ VGS = 10V2.4 Low thermal impedance 30250 @ VGS = 4.5V1.9 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU

Analog Power AM2381PP-Channel 80-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)800 @ VGS = -10V -1.1 Low thermal impedance -80900 @ VGS = -4.5V -1.0 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI

Analog Power AM2327PP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) (OHM) ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 0.052 @ VGS = -4.5V -3.6circuitry. Typical applications are DC-DC converters, power management in po

Analog Power AM2370NN-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)280 @ VGS = 10V1.5 Low thermal impedance 100355 @ VGS = 4.5V1.3 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost con

Analog Power AM2398NEN-Channel 60V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.194 @ VGS = 10 V 2.2battery-powered products suc

Analog Power AM2373PP-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) ()VDS (V) ID (A) Low r trench technology DS(on)6 @ VGS = -10V -0.39 Low thermal impedance -1006.5 @ VGS = -4.5V -0.37 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost

Analog Power AM20N10-130DN-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 130 @ VGS = 10V 17converters and power management in portable and 100160 @ VGS = 4.5V 15

Analog Power AM2329PP-Channel 30V (D-S) MOSFETThese miniature surface mount MOSFETsutilize High Cell Density process. Low rDS(on)PRODUCT SUMMARYassures minimal power loss and conserves VDS (V) rDS(on) ()ID (A)energy, making this device ideal for use in 0.112 @ VGS = 10 V 2.5power management circuitry. Typical -30applications are power switch, power 0.172 @ VGS = 4.5V

Analog Power AM20P03-60IP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARYminimal power loss and conserves energy, making VDS (V) rDS(on) m()ID (A)this device ideal for use in power management circuitry. Typical applications are PWMDC-DC 59 @ VGS = -10V 24-30converters, power management in

Analog Power AM2302NN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)76 @ VGS = 4.5V3.4 Low thermal impedance 20103 @ VGS = 2.5V3.0 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

Analog Power AM2323PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low VDS (V) rDS(on) (OHM) ID (A)rDS(on) and to ensure minimal power loss and heat 0.100 @ VGS = -4.5V -2.9dissipation. Typical applications are DC-DC converters and power management in portable and -20 0.160 @ VGS = -2.5V -

Analog Power AM2322NN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC VDS (V) rDS(on) ()ID (A)converters and power management in portable and 0.085 @ VGS = 10V 2.5battery-powered products such

Analog Power AM2326NN-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETsPRODUCT SUMMARYutilize High Cell Density process. Low VDS (V) rDS(on) ()ID (A)rDS(on) assures minimal power loss and 0.070 @ VGS = 4.5V 2.2conserves energy, making this device ideal for use in power management circuitry. 200.080@ VGS = 2.5V 2.0Typical applications are DC-DC 0.120@ VG

Analog Power AM2347PP-Channel 40-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)39 @ VGS = -10V -4.8 Low thermal impedance -4055 @ VGS = -4.5V -4.0 Fast switching speed SOT-23 Typical Applications: Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS

Analog Power AM20P04-60DP-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC 69 @ VGS = -10V 22converters and power management in portable and -40battery-powered products

Analog Power AM2317PP - Channel Logic Level MOSFETThese miniature surface mount MOSFETs PRODUCT SUMMARYutilize a high cell density trench process to VDS (V) rDS(on) () ID (A)provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical 0.30 @ VGS = -10 V -1.0-30applications are DC-DC converters and 0.50 @ VGS = -4.5V -0.9power management in portable

Analog Power AM2372NN-Channel 100V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) () ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 2 @ VGS = 10 V 0.7battery-powered products such a

Analog Power AM2340NEN-Channel 40-V (D-S) MOSFETPRODUCT SUMMARYThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat 43 @ VGS = 10V 5.2dissipation. Typical applications are DC-DC converters and power management in portable and 40 50 @ VGS = 4.5V 4.2batter

Analog Power AM2342NEN-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 86 @ VGS = 10V 5.2converters and power management in portable and 40battery-powered products s

Analog Power AM2330NN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m() ID (A)dissipation. Typical applications are DC-DC 32 @ VGS = 10V 5.2converters and power management in portable and 30battery-powered products suc

Analog Power AM2321PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)79 @ VGS = -4.5V -4.1 Low thermal impedance -20110 @ VGS = -2.5V -3.3 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI

Analog Power AM2358NEN-Channel 60V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.092 @ VGS = 10 V 3.1battery-powered products suc

Analog Power AM2332NN-Channel 20V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.058 @ VGS = 4.5 V 4.7battery-powered products suc

Analog Power AM2306NEN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m()ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 58 @ VGS = 10V 3.5circuitry. Typical applications are PWMDC-DC 30converters, power management in

Analog Power AM20N10-180DN-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)180 @ VGS = 10V14 Low thermal impedance 100190 @ VGS = 4.5V13 Fast switching speed Typical Applications: LED Inverter Circuits DC/DC Conversion Circuits Motor drives ABSOLUTE MAXIMUM RATINGS (TA = 2

Analog Power AM2312NN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)10 @ VGS = 4.5V9.4 Low thermal impedance 2013 @ VGS = 2.5V8.2 Fast switching speed Typical Applications: SOT-23 Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIMUM RATIN

Shenzhen Tuofeng Semiconductor Technology Co., LtdAPM2317 P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-4.5A ,RDS(ON)=28m (typ.) @ VGS=-4.5VRDS(ON)=38m (typ.) @ VGS=-2.5V RDS(ON)=55m (typ.) @ VGS=-1.8V Super High Dense Cell Design Reliable and RuggedS Lead Free and Green Devices Available(RoHS Compliant)Applications G Power Management

APM2510NUN-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/50A,RDS(ON)=8.5m (typ.) @ VGS=10VG DRDS(ON)=15m (typ.) @ VGS=4.5VS Super High Dense Cell Design Avalanche Rated Top View of TO-252 Reliable and RuggedD Lead Free and Green Devices Available (RoHS Compliant)ApplicationsG Power Management in Desktop Computer orDC/DC ConvertersSN-Ch

APM2054N N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/12A, RDS(ON)=35m(typ.) @ VGS=10VRDS(ON)=45m(typ.) @ VGS=4.5VRDS(ON)=110m(typ.) @ VGS=2.5V1 2 31 2 3 Super High Dense Cell Design High Power and Current Handling Capability G D SG D S TO-252, SOT-89 and SOT-223 Packages To

APM2556NUN-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/60A,RDS(ON)=4.5m (typ.) @ VGS=10VG DRDS(ON)=7.5m (typ.) @ VGS=4.5V Super High Dense Cell DesignS Reliable and Rugged Top View of TO-252 Lead Free and Green Devices AvailableD (RoHS Compliant)ApplicationsG Power Management in Desktop Computer orDC/DC ConvertersSN-Channel MOSFET

APM2509NUN-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/50A , RDS(ON)=7.5m(typ.) @ VGS=10V RDS(ON)=13m(typ.) @ VGS=4.5V Super High Dense Cell Design Avalanche Rated Top View of TO-252 Reliable and RuggedD Lead Free Available (RoHS Compliant)ApplicationsG Power Management in Desktop Computer or DC/DC ConvertersSN-Channel MOSFETOrderi

APM2014NN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/30A , RDS(ON)=12m(typ.) @ VGS=4.5V RDS(ON)=18m(typ.) @ VGS=2.5V Super High Dense Cell Design for ExtremelyLow RDS(ON)1 2 3 Reliable and Rugged TO-252 PackageG D S Top View of TO-252Applications Power Management in Comput

APM2071PD P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-4A, RDS(ON)=50m(typ.) @ VGS=-4.5VG RDS(ON)=75m(typ.) @ VGS=-2.5VDS Super High Dense Cell Design Top View of SOT-89 Reliable and Rugged (2) Lead Free and Green Devices AvailableD (RoHS Compliant)Applications(1)G DC/DC ConvertersS(3)P-Channel MOSFETOrdering and Marki

APM2318AN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/3A ,DRDS(ON)=35m(typ.) @ VGS=10VRDS(ON)=40m(typ.) @ VGS=4.5VGRDS(ON)=60m(typ.) @ VGS=2.5VS Super High Dense Cell Design Top View of SOT-23 Reliable and Rugged Lead Free Available (RoHS Compliant)DApplicationsG Power Management in

APM2030NN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A , RDS(ON)=35m(typ.) @ VGS=4.5VRDS(ON)=38m(typ.) @ VGS=2.5V Super High Dense Cell Design for ExtremelyLow RDS(ON)1 2 3 Reliable and Rugged TO-252 PackageG D S Top View of TO-252Applications Power Management in Computer

APM2513NUN-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/40A,RDS(ON)=10.5m (typ.) @ VGS=10VG DRDS(ON)=16m (typ.) @ VGS=4.5V Super High Dense Cell Design S Avalanche Rated Top View of TO-252 Reliable and RuggedD Lead Free and Green Devices Available(RoHS Compliant)GApplications Power Management in Desktop Computer orSDC/DC ConvertersN-Cha

GOFORDXM2N200.DDescription The XM2N200.uses advanced trench technology and Gdesign to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features SSchematic diagram VDSS RDS(ON) ID @10V (typ) 190V 356.6m 2A High density cell design for ultra low Rdson Fully characterized avalanche voltage an

GreenProductSTM201NaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) TypVDSS IDRugged and reliable.110 @ VGS=10VSuface Mount Package.100V 4A170 @ VGS=4.5VS O-81C(TA=25 unless otherwise noted)ABSOLUTE MAXIMUM RATINGSSym

SSFM2506 Main Product Characteristics: VDSS 25V RDS(on) 4.1mohm(typ.) ID 60A Sch emati c di ag ram TO-252 (D-PAK) Mar ki ng a nd pin Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and revers

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors M28S TRANSISTOR (NPN) FEATURES Power dissipation Pcm:0.625WTamb=25 MARKING:28S MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units

M28M(BR3DG28M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features High IC,, high hFE. / Applications Use in audio output driver stage amplifier applications. /

SEMICONDUCTOR5. Small temperature dependence of the turn-off switching loss48.525 25C2E1 E2 C13-M693+0.3 4- 6.5108+0.514 14 14 2.84-0.5All dimensions in millimeters271517.848+0.362.5+0.5G1 E1E2 G230.930.522.5SEMICONDUCTORSEMICONDUCTORSEMICONDUCTORSEMICONDUCTORSEMICONDUCTOR

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HM28S APPLICATIONS General Purpose And Switching Applications. ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150 TjJunction Temperature150 PCCollector Dissip ation

SM2607CSC Dual Enhancement Mode MOSFET (N- and P-Channel)Features Pin Description N-Channel 20V/5A,D2 RDS(ON)=38m(max.) @ VGS=4.5VS1D1G2 RDS(ON)=54m(max.) @ VGS=2.5VS2G1 RDS(ON)=85m(max.) @ VGS=1.8V P-ChannelTop View of SOT-23-6 -20V/-3.3A, RDS(ON)=85m(max.) @ VGS=-4.5V(4)D2(6)D1RDS(ON)=120m(max.) @ VGS=-2.5VRDS(ON)=210m(max.)

SM2217PSQGP-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-9.9A,SDRDS(ON) = 17m(max.) @ VGS =-4.5V DDRDS(ON) = 25m(max.) @ VGS =-2.5VRDS(ON) = 40m(max.) @ VGS =-1.8V GSPin 1DD Reliable and RuggedDFN2x2-6 Lead Free and Green Devices Available(RoHS Compliant)(1,2,5,6)DDDD HBM ESD protection level pass 2KVNote : The diode connec

SM2014NSUN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/13.8A,DRDS(ON)= 19.5m (max.) @ VGS=4.5VSRDS(ON)= 27m (max.) @ VGS=2.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-3(RoHS Compliant) ESD Protection. D (2)ApplicationsG (1) Power Management in Notebook Computer,Portable Equipment and Battery PoweredSyste

SM2518NSUCN-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/50A,RDS(ON)=9.5m (max.) @ VGS=10VRDS(ON)=14.5m (max.) @ VGS=4.5VSD Reliable and Rugged G Avalanche Rated Lead Free and Green Devices AvailableTop View of TO-251S(RoHS Compliant)D 100% UIS + Rg TestedGApplications Power Management in Desktop Computer or DC/DC Converters.SN-Channel

SM2337PSAP-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-5.5A,RDS(ON) = 34m (max.) @ VGS =-4.5VDRDS(ON) = 50m (max.) @ VGS =-2.5VSRDS(ON) = 75m (max.) @ VGS =-1.8VG Reliable and RuggedTop View of SOT-23-3 Lead Free and Green Devices Available(RoHS Compliant) HBM ESD protection level pass 2KV DNote : The diode connected between the gate andsour

SM2690NSCN-Channel Enhancement Mode MOSFETFeatures Pin Description 150V/1.6A,SDRDS(ON)= 360m(max.) @ VGS=10VDG Reliable and RuggedDD Lead Free and Green Devices Available(RoHS Compliant)Top View of SOT-23-6 ESD Protection(1,2,5,6)DDDDApplications(3)G For POE Power Primary Side Switch for LowPower DC/DC Converters.(4)SN-Channel MOSFETOrderin

SM2603PSCP-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-4.3A,SRDS(ON)= 48m (max.) @ VGS=-4.5VDDRDS(ON)= 68m (max.) @ VGS=-2.5VGDRDS(ON)= 100m (max.) @ VGS=-1.8VD Reliable and RuggedTop View of SOT-23-6 Lead Free and Green Devices Available(RoHS Compliant)(1,2,5,6)DD DDApplications Power Management in Notebook Computer,Portable Equip

SM2A18DSK Dual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1D1D2 200V/0.9A,D2RDS(ON)= 1140m(max.) @ VGS= 10V RDS(ON)= 1300m(max.) @ VGS= 4.5VS1G1 ESD protectedS2G2 100% UIS + Rg TestedTop View of SOP-8 Reliable and Rugged Lead Free and Green Devices AvailableD1 D1 D2 D2 (RoHS Compliant)ApplicationsG1 G2 Power Management in D

SM2421PSAN P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD -30V/-4.8A,RDS(ON)= 56m (Max.) @ VGS=-10V SRDS(ON)= 68m (Max.) @ VGS=-4.5VG RDS(ON)= 94m (Max.) @ VGS=-2.5V Super High Dense Cell DesignTop View of SOT-23N Reliable and RuggedS Lead Free and Green Devices Available(RoHS Compliant)ApplicationsG Power Management in Notebook Comp

APM2304A N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/5A,D RDS(ON)= 22m(typ.) @ VGS= 10VS RDS(ON)= 32m(typ.) @ VGS= 4.5VG Super High Dense Cell Design Top View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices AvailableD (RoHS Compliant)ApplicationsG Power Management in Notebook Computer,Portable Equipment and Battery Power

SM2306NSA N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/4.7A,D RDS(ON)=40m (max.) @ VGS=10VS RDS(ON)=60m (max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-3(RoHS Compliant)DApplicationsG Power Management in Notebook Computer,Portable Equipment and Battery Powered Systems.S Load SwitchN-Chann

SM2F04NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 250V/10A,DRDS(ON)= 300m (Max.) @ VGS=10VS Reliable and RuggedG Lead Free and Green Devices Available(RoHS Compliant) Top View of TO-252-3DApplicationsG Power Management in TV Inverter.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM2F04NS U : TO-252-3Assembly

SM2202NSQEN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 30V/8.4A,DDRDS(ON) = 15.5m(max.) @ VGS =10VRDS(ON) = 21m(max.) @ VGS =4.5V GSD Pin 1D Avalanche RatedTDFN2x2-6 Reliable and Rugged Lead Free and Green Devices Available(1,2,5,6)DD DD(RoHS Compliant) 100% UIS TestedApplications(3)G Power Management in Notebook Computer,

SM2326NSANN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/3A,DRDS(ON)= 70m(max.) @ VGS= 4.5VSRDS(ON)= 90m(max.) @ VGS= 2.5VGRDS(ON)= 110m(max.) @ VGS= 1.8VTop View of SOT-23N Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in DC/AC Inverter SystemsS DC-DC Converter

SM2F05NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 250V/7.4A,DRDS(ON)= 390m (Max.) @ VGS=10VS 100% UIS + Rg TestedG Reliable and RuggedTop View of TO-252-2 Lead Free and Green Devices Available(RoHS Compliant)DApplicationsG Power Management in TV Inverter.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM2F05NS U : TO

SM2319PSANP-Channel Enhancement Mode MOSFETFeatures Pin Description -40V/-3A,DRDS(ON)= 80m(max.) @ VGS= -10VSRDS(ON)= 120m(max.) @ VGS= -4.5VG Reliable and RuggedTop View of SOT-23N Lead Free and Green Devices Available(RoHS Compliant)DApplicationsG Load Switch. DC/DC Converter.SP-Channel MOSFETOrdering and Marking InformationPackage

SM2207PSQGP-Channel Enhancement Mode MOSFETFeatures Pin Description -12V/-8.7A,SDDDRDS(ON) = 22m(max.) @ VGS =-4.5VRDS(ON) = 30m(max.) @ VGS =-2.5VG SPin 1RDS(ON) = 38m(max.) @ VGS =-1.8VDDRDS(ON) = 57m(max.) @ VGS =-1.5VDFN2x2-6 Reliable and Rugged(1,2,5,6) Lead Free and Green Devices AvailableDD DD(RoHS Compliant)Applications(3)G

SM2327PSAP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-4A, DRDS(ON)=56m (max.) @ VGS=-10VSRDS(ON)=70m (max.) @ VGS=-4.5VGRDS(ON)=100m (max.) @ VGS=-2.5VTop View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in LCD TV, Monitor,SNotebook Computer, Portable Equipment and

SM2317PSA P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-4.6A , DRDS(ON)= 48m (Max.) @ VGS=-4.5VSRDS(ON)= 70m (Max.) @ VGS=-2.5VGRDS(ON)=110m (Max.) @ VGS=-1.8VTop View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices Available(RoHS Compliant)DApplicationsG Power Management in Notebook Computer,Portable Equipment and Battery Powe

SM2A06NSFP N-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/15A,RDS(ON)=140m (max.) @ VGS=10V Reliable and RuggedSDG Lead Free and Green Devices Available(RoHS Compliant)Top View of TO-220FPDApplications High Current Switching.G Uninterruptible Power Supply. Inverter Systems. Display & Lighting Equipment.SN-Channel MOSFETOrdering and Mar

SM2210NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 12V/12A,DDRDS(ON) = 4.3m (max.) @ VGS =4.5VRDS(ON) = 5.6m (max.) @ VGS =2.5VG SPin 1DD 100% UIS + Rg TestedDFN2x2A-6_EP Reliable and Rugged Lead Free and Green Devices Available(1,2,5,6)DDDD (RoHS Compliant)Applications(3)G Battery Management Application. Power Management Fu

SM2602NSCN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6.2A,SDRDS(ON)= 24m (max.) @ VGS=4.5VDGRDS(ON)= 32m (max.) @ VGS=2.5VDD Reliable and RuggedTop View of SOT-23-6 Lead Free and Green Devices Available(RoHS Compliant)(1,2,5,6)DD DDApplications(3)G Power Management in Notebook Computer,Portable Equipment and Battery PoweredSystem

APM2558NU N-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/60A,DRDS(ON)=4.5m (Typ.) @ VGS=10VSRDS(ON)=7.5m (Typ.) @ VGS=4.5VG Reliable and Rugged Avalanche RatedTop View of TO-252-3 Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrdering and Mar

SM2329PSA P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-3.3A, DRDS(ON)= 85m (Max.) @ VGS=-4.5VSRDS(ON)= 120m (Max.) @ VGS=-2.5VGRDS(ON)= 210m (Max.) @ VGS=-1.8VTop View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in Notebook Computer,Portable Equipment and Battery Powe

SM2403PSAN P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD -20V/-3.3A,SRDS(ON)= 90m (Max.) @ VGS=-4.5VGRDS(ON)= 135m (Max.) @ VGS=-2.5VRDS(ON)= 240m (Max.) @ VGS=-1.8VTop View of SOT-23N Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Load switch. For Portable Equipment.S For Networking application.P

SM2030NSU N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDrain 4 20V/30A, RDS(ON)= 20.5m (Max.) @ VGS=4.5V3 Source2 RDS(ON)= 29m (Max.) @ VGS=2.5V1 Gate Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252(RoHS Compliant)DApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrdering

SM2558NSUCN-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/60A,RDS(ON)=5.2m (max.) @ VGS=10VSRDS(ON)=9.5m (max.) @ VGS=4.5VDG Reliable and Rugged Avalanche RatedTop View of TO-251 Lead Free and Green Devices Available(RoHS Compliant)DApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrdering and Mar

SM2A12NSUN-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/25A,D RDS(ON)= 70m(max.) @ VGS= 10VS 100% UIS + Rg TestedG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-2 (RoHS Compliant)DGApplications Power Management in TV Converter.S DC-DC Converter.N-Channel MOSFETOrdering and Marking InformationPackage C

APM2317A P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-4.5A ,DRDS(ON)=28m (typ.) @ VGS=-4.5VSRDS(ON)=38m (typ.) @ VGS=-2.5VG RDS(ON)=55m (typ.) @ VGS=-1.8VTop View of SOT-23-3 Super High Dense Cell Design Reliable and RuggedS Lead Free and Green Devices Available(RoHS Compliant)Applications G Power Management in Notebook Com

SM2201NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 30V/10.2A,DDRDS(ON) = 10.5m(max.) @ VGS =10VRDS(ON) = 14m(max.) @ VGS =4.5VGSDPin 1D Reliable and RuggedDFN2x2-6 Lead Free and Green Devices Available (RoHS Compliant)(1,2,5,6)DD DD 100% UIS TestedApplications(3)G Power Management in Notebook Computer,(4)SPortable

SM2A16NSF/SM2A16NSFP N-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/15A,RDS(ON)=156m (max.) @ VGS=10V Reliable and RuggedS S Lead Free and Green Devices AvailableD DG G(RoHS Compliant)Top View of TO-220FPTop View of TO-220 100% UIS + Rg TestedDApplications Power Management in TV Inverter.GSN-Channel MOSFETOrdering and Marking Infor

SM2321PSA P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-4.3A , DRDS(ON)= 56m (Max.) @ VGS=-10VSRDS(ON)= 68m (Max.) @ VGS=-4.5VG RDS(ON)= 94m (Max.) @ VGS=-2.5VTop View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in Notebook Computer,Portable Equipment and Battery Powe

SM2204NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 30V/7A,DDRDS(ON) = 23m(max.) @ VGS =10VRDS(ON) = 31.5m(max.) @ VGS =4.5VGSD Pin 1D Avalanche RatedDFN2x2-6 Reliable and Rugged Lead Free and Green Devices Available(1,2,5,6)DDDD(RoHS Compliant) 100% UIS TestedApplications(3)G Load Switch HDD (4)S DC/DC ConverterN

SM2610NSCN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/6.6A,SDRDS(ON)= 21m(max.) @ VGS=10VDGRDS(ON)= 27m(max.) @ VGS=4.5VDD Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-6(RoHS Compliant)(1,2,5,6)DD DDApplications Power Management in Notebook Computer,(3)GPortable Equipment and Battery PoweredSys

SM2612NSCN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/5.5A,SDRDS(ON)= 26.5m(max.) @ VGS=10VDGRDS(ON)= 35m(max.) @ VGS=4.5VDD Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-6(RoHS Compliant)(1,2,5,6)DDDDApplications Power Management in Notebook Computer,(3)GPortable Equipment and Battery PoweredSy

SM2302NSAN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A,DRDS(ON)= 26m (max.) @ VGS=4.5VSRDS(ON)= 37m (max.) @ VGS=2.5VG ESD Protected Reliable and RuggedTop View of SOT-23-3 Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in Notebook Computer,Portable Equipment and Battery PoweredSSystems.N-Chan

SM2601PSC P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-7.3A ,SDRDS(ON)=26m (Max.) @ VGS=-4.5VDGDRDS(ON)=38m (Max.) @ VGS=-2.5VDRDS(ON)=58m (Max.) @ VGS=-1.8VTop View of SOT-23-6 Reliable and Rugged Lead Free and Green Devices Available(1,2,5,6)(RoHS Compliant)DD DDApplications(3)G Power Management in Notebook Computer,

SM2225NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 100V/2.7A,DD RDS(ON)= 156m (max.) @ VGS=10V RDS(ON)= 176m (max.) @ VGS=4.5VGSDPin 1D ESD ProtectionDFN2x2A-6_EP 100% UIS + Rg Tested Reliable and Rugged(1,2,5,6)DDDD Lead Free and Green Devices Available(RoHS Compliant)Applications(3)G For POE Power Primary Side Switch for

SM2A06NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/18A,DRDS(ON)=140m (max.) @ VGS=10VS Reliable and RuggedG Lead Free and Green Devices Available(RoHS Compliant)Top View of TO-252DApplications High Current Switching.G Uninterruptible Power Supply. Inverter Systems. Display & Lighting Equipment.SN-Channel MOSFETOrdering and Markin

APM2605CP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-4.5A,SRDS(ON)=43m (typ.) @ VGS=-10V DDGRDS(ON)=60m (typ.) @ VGS=-4.5VDD Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-6(RoHS Compliant)(4)SApplications(3)G Power Management in Notebook Computer,Portable Equipment and Battery PoweredSystems.D D D

SM2604NSCN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/7.4A,SRDS(ON)= 24m(max.) @ VGS=10VDDGRDS(ON)= 32.5m(max.) @ VGS=4.5VDD Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-6(RoHS Compliant)(1,2,5,6)DD DDApplications Power Management in Notebook Computer,(3)GPortable Equipment and Battery PoweredS

SM2328NSANN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/4A,DRDS(ON)= 40m (max.) @ VGS= 4.5VSRDS(ON)= 55m (max.) @ VGS= 2.5VGRDS(ON)= 85m (max.) @ VGS= 1.8VTop View of Narrow SOT-23 Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in DC/AC Inverter Systems.SN-Channel MOSFETOrdering

SM2A04NSV N-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/1.9A, RDS(ON)= 400m (max.) @ VGS= 10VG Reliable and Rugged DS Lead Free and Green Devices AvailableTop View SOT-223 (RoHS Compliant)DApplications Power Management in TV Inverter.GSN-Channel MOSFETOrdering and Marking InformationPackage CodeSM2A04NS V : SOT-223Assembly MaterialO

APM2324AAN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/3A,DRDS(ON)= 50m(Typ.) @ VGS= 4.5VSRDS(ON)= 65m(Typ.) @ VGS= 2.5VGRDS(ON)= 120m(Typ.) @ VGS= 1.8V Reliable and Rugged Top View of SOT-23 Lead Free and Green Devices Available(RoHS Compliant)DGApplications Power Management in Notebook Computer,Portable Equipment and Ba

SM2501NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/60A,Drain 4 RDS(ON)= 5m (Max.) @ VGS=10V3Source2 RDS(ON)= 6m (Max.) @ VGS=4.5V1Gate RDS(ON)= 7.5m (Max.) @ VGS=2.5V Reliable and RuggedTop View of TO-252-3 Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Motor Controls. High Frequency Isolated DC-DC Con

APM2055NU N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/10A,D RDS(ON)=55m (Typ.) @ VGS=10VS RDS(ON)=75m (Typ.) @ VGS=4.5VG RDS(ON)=140m (Typ.) @ VGS=2.5V Super High Dense Cell DesignTop View of TO-252 Reliable and Rugged Lead Free and Green Devices AvailableD (RoHS Compliant)ApplicationsG Power Management in Desktop Computer o

SM2222CSQG Dual Enhancement Mode MOSFET (N- and P-Channel)Features Pin Description N-Channel 20V/4.5A,S2G2D1D1 RDS(ON)= 32m (max.) @ VGS=4.5VD2 RDS(ON)= 48.6m (max.) @ VGS=2.5VD2 RDS(ON)= 85m (max.) @ VGS=1.8VG1Pin 1S1 P-ChannelDFN2x2C-6_EP2 -20V/-2.7A, RDS(ON)= 85m (max.) @ VGS=-4.5VRDS(ON)= 127m (max.) @ VGS=-2.5V(3)D2(6)D1RDS(ON)= 230m (max.)

SM2213PSQGP-Channel Enhancement Mode MOSFETFeatures Pin Description -8V/-9.4A,SDDRDS(ON) = 19m(max.) @ VGS =-4.5V DRDS(ON) = 24m(max.) @ VGS =-2.5VGSRDS(ON) = 33m(max.) @ VGS =-1.8V Pin 1DDRDS(ON) = 45m(max.) @ VGS =-1.5VDFN2x2-6RDS(ON) = 90m(max.) @ VGS =-1.2V Reliable and Rugged (1,2,5,6)DD DD Lead Free and Green Devices Available(RoH

SM2314NSAN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/4.5A ,DRDS(ON)=45m (max.) @ VGS=4.5VRDS(ON)=60m (max.) @ VGS=2.5VSRDS(ON)=85m (max.) @ VGS=1.8VG Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23-3(RoHS Compliant)D ESD ProtectionApplicationsG Power Management in Notebook Computer,Portable Equipment and Batt

SM2370NSAN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 100V/2A, RDS(ON)= 156m (max.) @ VGS=10VS RDS(ON)= 176m (max.) @ VGS=4.5VG ESD ProtectionTop View of SOT-23 100% UIS + Rg Tested Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in TV Inveter.SN-Channel MOSFETOrdering and Markin

SM2054NSDN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/7.5A, RDS(ON)= 21m (max.) @ VGS= 10VSD RDS(ON)= 23m (max.) @ VGS= 4.5VG RDS(ON)= 36m (max.) @ VGS= 2.5V Reliable and RuggedTop View SOT-89 ESD Protection Lead Free and Green Devices AvailableD (2) (RoHS Compliant)G (1)Applications Switching RegulatorsS (3) Switching ConvertersN-Chann

SM2A12NSKPN-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/23A,DDDD RDS(ON)= 70m (max.) @ VGS= 10V Reliable and RuggedG Lead Free and Green Devices AvailableS Pin 1SS (RoHS Compliant)DFN5x6-8( 5,6,7,8 )D D DD(4)ApplicationsG Power Management in TV Converter. DC-DC Converter.S S S(1, 2, 3)N-Channel MOSFETOrdering and Marking

SM2621PSC P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionS -30V/-5.1A ,DDGRDS(ON)= 54m (Max.) @ VGS=-10VDRDS(ON)= 65m (Max.) @ VGS=-4.5VD RDS(ON)= 92m (Max.) @ VGS=-2.5VTop View of SOT-23-6 Reliable and Rugged Lead Free and Green Devices Available(1,2,5,6)(RoHS Compliant)DD DDApplications(3)G Power Management in Notebook Comput

SM2A08NSF N-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/10A,RDS(ON)=205m (max.) @ VGS=10V 100% UIS + Rg TestedSD Reliable and RuggedG Lead Free and Green Devices AvailableTop View of TO-220(RoHS Compliant)DApplicationsG High Frequency DC-DC Converters. Plasma Display Panel. Power Management in TV Converter.SN-Channel MOSFET

SM2416NSAN N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 30V/0.83A , RDS(ON)=700m (max.) @ VGS=4.5VSRDS(ON)=1000m (max.) @ VGS=2.5VGRDS(ON)=1600m (max.) @ VGS=1.8V Reliable and RuggedTop View of SOT-23N Lead Free and Green Devices AvailableD(RoHS Compliant) ESD ProtectionGApplications High Speed and Analog Switching Applications.S Low volta

SM2404NSAN N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 30V/5.1A, RDS(ON)=26.5m(max.) @ VGS=10V S RDS(ON)=36.5m(max.) @ VGS=4.5VG Reliable and RuggedTop View of SOT-23N Lead Free and Green Devices Available(RoHS Compliant)DApplicationsG Power Magangement in Notebook Computer,Portable Equipment and Battery Powered Systems.S Load Swit

SM2A12NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/25A, RDS(ON)= 70m (max.) @ VGS= 10V Reliable and RuggedS Lead Free and Green Devices AvailableDG (RoHS Compliant)Top View of TO-220DGApplications High Frequency DC-DC converters.S Plasma Display Panel. Power Management in TV Converter.N-Channel MOSFETOrdering and Marking Informati

SM2660NSCN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/5A,SDRDS(ON)= 48m(max.) @ VGS=10VDGRDS(ON)= 59m(max.) @ VGS=4.5VDD Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-6(RoHS Compliant)(1,2,5,6)DDDDApplications(3)G High frequency DC-DC converters.(4)SN-Channel MOSFETOrdering and Marking Informa

SM2013PSKP P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-100Aa,DDRDS(ON) = 3.0m (max.) @ VGS =-10V DDRDS(ON) = 3.9m (max.) @ VGS =-4.5VRDS(ON) = 5.7m (max.) @ VGS =-2.5VGPin 1SS 100% UIS + Rg TestedSDFN5x6A-8_EP Reliable and Rugged Lead Free and Green Devices Available( 5,6,7,8 )(RoHS Compliant)DDDDApplications(4) Portable Equi

APM2301CA P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-3ADRDS(ON)= 70m (max.) @ VGS= -4.5VSRDS(ON)= 115m (max.) @ VGS= -2.5VGRDS(ON)= 250m (max.) @ VGS= -1.8V Reliable and RuggedTop View of SOT-23 Lead Free and Green Devices Available( RoHS Compliant)DGApplications Power Management in Notebook Computer,Portable Equipment and

SM2608NSCN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/7.4A,SDRDS(ON)= 17m(max.) @ VGS=10VDGRDS(ON)= 21.5m(max.) @ VGS=4.5VDD Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-6(RoHS Compliant)(1,2,5,6)DD DDApplications Power Management in Notebook Computer,(3)GPortable Equipment and Battery PoweredS

SM2300NSAN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A ,DRDS(ON)=25m (max.) @ VGS=10VRDS(ON)=30m (max.) @ VGS=4.5VSRDS(ON)=40m (max.) @ VGS=2.5VGRDS(ON)=60m (max.) @ VGS=1.8V Reliable and Rugged Top View of SOT-23-3 Lead Free and Green Devices AvailableD(RoHS Compliant) ESD ProtectionGApplications Power Management in Notebook Computer

SM2290NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 150V/1.6A,DDRDS(ON) = 360m (max.) @ VGS =10VG S ESD ProtectionPin 1DD 100% UIS TestedDFN2x2A-6_EP Reliable and Rugged(1,2,5,6) Lead Free and Green Devices AvailableDDDD (RoHS Compliant)Applications(3)G For POE Power Primary Side Switch for(4)SLow. Power DC/DC Converters.

SM2215PSQGP-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD -20V/-9.4A,DDRDS(ON) = 19m(max.) @ VGS =-4.5VRDS(ON) = 27m(max.) @ VGS =-2.5VGSPin 1DDRDS(ON) = 45m(max.) @ VGS =-1.8V Super High Dense Cell DesignDFN2x2-6 Reliable and Rugged(1,2,5,6)DD DD Lead Free and Green Devices Available(RoHS Compliant)Applications(3)G Powe

SM2620CSC Dual Enhancement Mode MOSFET (N- and P-Channel)Features Pin Description N-Channel 30V/4.9A, D2S1 RDS(ON)=39m(max.) @ VGS=10VD1G2S2 RDS(ON)=68m(max.) @ VGS=4.5VG1 P-ChannelTop View of SOT-23-6 -30V/-3A,RDS(ON)=100m(max.) @ VGS=-10V(4)D2(6)D1RDS(ON)=170m(max.) @ VGS=-4.5V Reliable and Rugged Lead Free and Green Devices Availabl

SM2333PSAP-Channel Enhancement Mode MOSFETFeatures Pin Description -12V/-6.3A,DRDS(ON) = 26m (max.) @ VGS =-4.5VSRDS(ON) = 33m (max.) @ VGS =-2.5VGRDS(ON) = 40m (max.) @ VGS =-1.8VRDS(ON) = 60m (max.) @ VGS =-1.5VTop View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in Notebook Comput

SM2335PSAP-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-7.1A,DRDS(ON) = 22m (max.) @ VGS =-4.5VRDS(ON) = 30m (max.) @ VGS =-2.5VSRDS(ON) = 45m (max.) @ VGS =-1.8VG Reliable and RuggedTop View of SOT-23-3 Lead Free and Green Devices Available(RoHS Compliant) HBM ESD protection level pass 2KV DNote : The diode connected between the gate andsour

SM2202NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 30V/8.4A,DDRDS(ON) = 15.5m(max.) @ VGS =10VRDS(ON) = 21m(max.) @ VGS =4.5VGSD Pin 1D Avalanche RatedDFN2x2-6 Reliable and Rugged Lead Free and Green Devices Available(1,2,5,6)DD DD(RoHS Compliant) 100% UIS TestedApplications(3)G Power Management in Notebook Computer,

SM2006NSKN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 20V/10A,DDRDS(ON) = 18m (max.) @ VGS = 4.5VRDS(ON) = 27m (max.) @ VGS = 2.5VSS 100% UIS TestedSG Reliable and RuggedTop View of SOP-8 Lead Free Available (RoHS Compliant)( 5,6,7,8 )D D D DApplications(4)G Power Management in Desktop Computer or DC/DC Converters.S S

SM2303PSAP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-4A,DRDS(ON) = 56m (max.) @ VGS =-10VSRDS(ON) = 88m (max.) @ VGS =-4.5VG Reliable and RuggedTop View of SOT-23-3 Lead Free and Green Devices Available(RoHS Compliant)DApplicationsG Power Management in Notebook Computer,Portable Equipment and Battery PoweredSSystems.P-Channel MOSFE

SM2F07NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 250V/5.2A,DRDS(ON)= 690m (Max.) @ VGS=10VS 100% UIS + Rg TestedG Reliable and RuggedTop View of TO-252-2 Lead Free and Green Devices Available(RoHS Compliant)DApplicationsG Power Management in TV Inverter.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM2F07NS U : TO

SM2630DSC Dual N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/4A,D2S1 RDS(ON)=39m(max.) @ VGS=10VD1G2 RDS(ON)=68m(max.) @ VGS=4.5VS2G1 Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-6(RoHS Compliant)(6)D1 (4)D2(1)(3)ApplicationsG1G2 Power Management in Notebook Computer,Portable Equipment and Ba

SM2054NSVN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/7.5A, RDS(ON)= 23.5m (max.) @ VGS= 10VG RDS(ON)= 27m (max.) @ VGS= 4.5VDS RDS(ON)= 42m (max.) @ VGS= 2.5V Reliable and RuggedTop View SOT-223 ESD Protection Lead Free and Green Devices AvailableD (2) (RoHS Compliant)G (1)Applications Switching RegulatorsS (3) Switching ConvertersN-Ch

SM2670NSCN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/2.6A,SD RDS(ON)= 156m(max.) @ VGS=10VDG RDS(ON)= 176m(max.) @ VGS=4.5VDD ESD Protection 100% UIS TestedTop View of SOT-23-6 Reliable and Rugged(1,2,5,6) Lead Free and Green Devices AvailableDDDD(RoHS Compliant)Applications(3)G Power Management in DC/DC Converter.(4)S

SM2700CSC Dual Enhancement Mode MOSFET (N- and P-Channel)FeaturesPin Description N-Channel 20V/2A,D2RDS(ON)= 125m(typ.) @ VGS= 4.5VS1D1G2RDS(ON)= 175m(typ.) @ VGS= 2.5VS2G1RDS(ON)= 280m(typ.) @ VGS= 1.8V P-Channel Top View of SOT-23-6-20V/-1.4A,RDS(ON)= 255m(typ.) @ VGS= -4.5V(4)D2(6)D1RDS(ON)= 400m(typ.) @ VGS= -2.5VRDS(ON)= 600m

SM2A11NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/58A, RDS(ON)= 26.5m (max.) @ VGS= 10V 100% UIS + Rg TestedS Reliable and RuggedDG Lead Free and Green Devices AvailableTop View of TO-220 (RoHS Compliant)DApplicationsG Synchronous Rectification. Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Marking Informatio

SM2323PSAP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-2.9A,D RDS(ON) = 108m (max.) @ VGS =-10VS RDS(ON) = 182m (max.) @ VGS =-4.5VG Reliable and RuggedTop View of SOT-23-3 Lead Free and Green Devices Available (RoHS Compliant) ESD ProtectionDNote : The diode connected between the gate andsource serves only as protection against ESD. Nogat

SM2312NSA N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/3A,D RDS(ON)=72m (max.) @ VGS=10VS RDS(ON)=100m (max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-3(RoHS Compliant)DApplicationsG DC-DC Conversion. Load Switch for PC fields.S Load Switch for Portables.N-Channel MOSFETOrdering and Marki

SM2203NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 30V/7.4A,DDRDS(ON) = 20.5m(max.) @ VGS =10VRDS(ON) = 28.5m(max.) @ VGS =4.5VGSPin 1DD Reliable and RuggedDFN2x2-6 Lead Free and Green Devices Available (RoHS Compliant)(1,2,5,6)DD DD 100% UIS TestedApplications(3)G Power Management in Notebook Computer,(4)SPortable

SM2430NSAN N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 30V/1.49A , RDS(ON)= 390m(max.) @ VGS=4.5VS RDS(ON)= 420m(max.) @ VGS=4VG RDS(ON)= 820m(max.) @ VGS=2.5V Reliable and RuggedTop View of SOT-23N Lead Free and Green Devices AvailableD(RoHS Compliant) ESD Protection : HBM>3KV, MM>200VRGApplications G High Speed and Analog Switch

SM2300NSANN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/4A,DRDS(ON)= 40m(max.) @ VGS= 4.5VSRDS(ON)= 55m(max.) @ VGS= 2.5VGRDS(ON)= 85m(max.) @ VGS= 1.8VTop View of SOT-23N Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in DC/AC Inverter Systems.SN-Channel MOSFET

SM2360NSA N-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/2.7A ,DRDS(ON)=104m (max.) @ VGS=10VS RDS(ON)=130m (max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-3(RoHS Compliant)DApplicationsG Power Management in DC/AC Inverer Systems.SN-Channel MOSFETOrdering and Marking InformationSM2360NS Packa

SM2011PSKP P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-100Aa,DDRDS(ON) = 2.0m (max.) @ VGS =-10V DDRDS(ON) = 2.5m (max.) @ VGS =-4.5VRDS(ON) = 3.6m (max.) @ VGS =-2.5VGPin 1SS 100% UIS + Rg TestedSDFN5x6A-8_EP ESD Protection Reliable and Rugged( 5,6,7,8 ) Lead Free and Green Devices Available DDDD(RoHS Compliant)(4)Applications

SM2A04NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/8A,Drain 4RDS(ON)= 400m (Max.) @ VGS= 10V3Source2 Reliable and Rugged1Gate Lead Free and Green Devices Available(RoHS Compliant)Top View of TO-252-3DApplicationsG Power Management in TV Inverter.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM2A04NS U : TO-

SM2014NSKPN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/13.8A,DDDDRDS(ON)= 19.5m (max.) @ VGS=4.5VRDS(ON)= 27m (max.) @ VGS=2.5VGPin 1 Reliable and RuggedSSS Lead Free and Green Devices AvailableDFN5x6-8(RoHS Compliant) ESD Protection.D (5, 6)ApplicationsG (4) Power Management in Notebook Computer,Portable Equipment and Battery

SM2223PSQG P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD -12V/-11A,DDRDS(ON) = 13.8m(max.) @ VGS =-4.5VRDS(ON) = 19m(max.) @ VGS =-2.5V SGPin 1DDRDS(ON) = 26m(max.) @ VGS =-1.8VRDS(ON) = 36m(max.) @ VGS =-1.5VDFN2x2-6 Reliable and Rugged(1,2,5,6)DD DD Lead Free and Green Devices Available(RoHS Compliant)Applications(3)G

SM2310NSA N-Channel Enhancement Mode MOSFETFeatures Pin Description 55V/2.1A ,D RDS(ON)=130m (max.) @ VGS=4.5VS RDS(ON)=180m (max.) @ VGS=2.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-3(RoHS Compliant)DApplicationsG Power Management in DC/AC Inverer Systems.SN-Channel MOSFETOrdering and Marking InformationSM2310NS Pac

SM2A06NSF N-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/18A,RDS(ON)=140m (max.) @ VGS=10V Reliable and RuggedSD Lead Free and Green Devices AvailableG(RoHS Compliant)Top View of TO-220DApplicationsG Power Management in TV Inverter.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM2A06NS F : TO-220Assembly MaterialOper

SM2558NUBN-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/60A,RDS(ON)=4.5m (Typ.) @ VGS=10VRDS(ON)=7.5m (Typ.) @ VGS=4.5VSD Reliable and RuggedG Avalanche Rated Lead Free and Green Devices AvailableTop View of TO-251(RoHS Compliant)D 100% UIS + Rg TestedApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-C

SM2304NSA N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/5.1A,D RDS(ON)=25m(max.) @ VGS=10VS RDS(ON)=35m(max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-3(RoHS Compliant)D 100% UIS + Rg TestedApplicationsG Power Magangement in Notebook Computer,Portable Equipment and Battery Powered Sys

SM2260NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 60V/5.2A,DDRDS(ON) = 48m(max.) @ VGS =10VRDS(ON) = 59m(max.) @ VGS =4.5V SGPin 1DD Reliable and RuggedDFN2x2-6 Lead Free and Green Devices Available (RoHS Compliant)(1,2,5,6)DDDD 100% UIS TestedApplications(3)G High frequency DC-DC converters.(4)SN-Channel MOSFETOr

SM2A02NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/16A,DRDS(ON)=90m (Max.) @ VGS=10VS Reliable and RuggedG Lead Free and Green Devices Available(RoHS Compliant) Top View of TO-252-3DApplicationsG Power Management in TV Converter. DC-DC Converter.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM2A02NS U : TO-252-3

SM2205PSQGP-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD -20V/-6.5A,DDRDS(ON) = 39m(max.) @ VGS =-4.5VRDS(ON) = 56m(max.) @ VGS =-2.5VGSPin 1DD Reliable and RuggedDFN2x2-6 Lead Free and Green Devices Available(RoHS Compliant)(1,2,5,6)DD DDApplications(3)G Power Management in Notebook Computer,(4)SPortable Equipment and Bat

APM2303AP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-4A, D RDS(ON)=55m (max.) @ VGS=-10VS RDS(ON)=70m (max.) @ VGS=-4.5VG RDS(ON)=115m (max.) @ VGS=-2.5VTop View of SOT-23-3 Super High Dense Cell DesignD Reliable and Rugged Enhance ESD Cell Protection Lead Free and Green Devices Available(RoHS Compliant)GApplications P

SM2A08NSFP N-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/9A,RDS(ON)=205m (max.) @ VGS=10V 100% UIS + Rg TestedSD Reliable and Rugged G Lead Free and Green Devices AvailableTop View of TO-220FP(RoHS Compliant)DApplicationsG High Frequency DC-DC Converters. Plasma Display Panel. Power Management in TV Converter.SN-Channel MOSFET

SM2206NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 20V/9A,DDRDS(ON) = 10.9m (max.) @ VGS =4.5VRDS(ON) = 15.5m (max.) @ VGS =2.5V SGPin 1DDRDS(ON) = 26m (max.) @ VGS =1.8V 100% UIS + Rg TestedDFN2x2A-6_EP Reliable and Rugged(1,2,5,6)DDDD Lead Free and Green Devices Available (RoHS Compliant)Applications(3)G Li-lon Battery Pac

SM2307PSA P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-6A , DRDS(ON)=29m (Max.) @ VGS=-4.5VSRDS(ON)=40m (Max.) @ VGS=-2.5VGRDS(ON)=60m (Max.) @ VGS=-1.8VTop View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices Available(RoHS Compliant)DApplicationsG Power Management in Notebook Computer,Portable Equipment and Battery Powered

SM2211PSQGP-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD -30V/-7.9A,DDRDS(ON) = 27m (max.) @ VGS =-10VRDS(ON) = 42m (max.) @ VGS =-4.5VGSPin 1DD 100% UIS + Rg TestedDFN2x2A-6_EP Reliable and Rugged Lead Free and Green Devices Available(1,2,5,6)DD DD(RoHS Compliant)Applications(3)G Power Management in Notebook Computer,(4)SPort

SM2691PSC P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionS -150V/-1.1A ,DDGRDS(ON)= 750m (Max.) @ VGS=-10VDD 100% UIS + Rg Tested Reliable and RuggedTop View of SOT-23-6 Lead Free and Green Devices Available(RoHS Compliant)(1,2,5,6)DDDDApplications(3)G Load switch for Networking application.(4)SP-Channel MOSFETOrdering and Marking Info

APM2306AN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/3.5A ,D RDS(ON)= 65m (max.) @ VGS=10VS RDS(ON)= 90m (max.) @ VGS=5VG Super High Dense Cell Design Reliable and RuggedTop View of SOT-23-3 Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in Notebook Computer,Portable Equipment and Battery PoweredSys

SM2001CSK Dual Enhancement Mode MOSFET (N- and P-Channel)Features Pin DescriptionD1 N-ChannelD1D2 20V/9.5A, D2 RDS(ON) =14m (max.) @ VGS = 4.5V RDS(ON) =18m (max.) @ VGS = 2.5VS1G1S2 P-ChannelG2 -20V/-6A,Top View of SOP 8 RDS(ON) =45m (max.) @ VGS =-4.5V RDS(ON) =65m (max.) @ VGS =-2.5V(8) (7) (6) (5)D1 D1 D2 D2 100% UIS + Rg Tested Reliable and Rug

SM2305PSA P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-4.9A , DRDS(ON)=43m (Max.) @ VGS=-4.5VSRDS(ON)=58m (Max.) @ VGS=-2.5VGRDS(ON)=88m (Max.) @ VGS=-1.8VTop View of SOT-23 100% UIS + Rg Tested Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in Notebook Computer,Po

SM2318NSA N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/4.8A,D RDS(ON)=40m (max.) @ VGS=10VS RDS(ON)=48m (max.) @ VGS=4.5VG RDS(ON)=85m (max.) @ VGS=2.5V Reliable and RuggedTop View of SOT-23-3 Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in Notebook Computer,Portable Equipment and Battery Powered Sy

SM2316NSAN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 30V/6.2A, RDS(ON)= 23.5m (max.) @ VGS=10VS RDS(ON)= 26m (max.) @ VGS=4.5VG RDS(ON)= 34m (max.) @ VGS=2.5V ESD Protection Top View of TSOT-23 100% UIS + Rg Tested Reliable and RuggedD Lead Free and Green Devices Available(RoHS Compliant)GApplications Load Switch. DC-DC converter.S Po

SM2363PSAP-Channel Enhancement Mode MOSFETFeatures Pin Description -60V/-1.8A,DRDS(ON)= 225m (max.) @ VGS=-10VRDS(ON)= 300m (max.) @ VGS=-4.5VS ESD ProtectionG 100% UIS+Rg TestedTop View of SOT-23 Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in DC/DC Converter. Load switch.SP-Channel MOSFET

APM2701AC Dual Enhancement Mode MOSFET (N- and P-Channel)Features Pin Description N-Channel 20V/3A,D2S1 RDS(ON)=50m(typ.) @ VGS=4.5VD1G2RDS(ON)=65m(typ.) @ VGS=2.5VS2G1 P-Channel-20V/-2A,Top View of SOT-23-6RDS(ON)=90m(typ.) @ VGS=-4.5V(4)D2RDS(ON)=130m(typ.) @ VGS=-2.5V (6)D1 Reliable and Rugged Lead Free and Green Devices Available(

SM2A08NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/10A,DRDS(ON)=210m (max.) @ VGS=10VS Reliable and RuggedG Lead Free and Green Devices Available(RoHS Compliant)Top View of TO-252-3DApplications High Current Switching.G Uninterruptible Power Supply. Inverter Systems. Display & Lighting Equipment.SN-Channel MOSFETOrdering and Mark

SM2692NSCN-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/1.2A,SD RDS(ON)= 700m(max.) @ VGS=10VDG ESD ProtectionDD 100% UIS + Rg Tested Reliable and RuggedTop View of SOT-23-6 Lead Free and Green Devices Available(1,2,5,6)(RoHS Compliant)DDDDApplications(3)G DC-DC converter for Networking. Load switch.(4)SN-Channel MOSFETOrd

SM2A27NSFP N-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/4A,RDS(ON)= 660m (Max.) @ VGS=10VRDS(ON)= 740m (Max.) @ VGS=4.5VS 100% UIS + Rg TestedDG Reliable and RuggedTop View of TO-220FP Lead Free and Green Devices Available(RoHS Compliant)D (2)ApplicationsG (1) Power Management in DC/DC Converter.S (3)N-Channel MOSFETOrdering and Mark

SM2425PSANP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-3.7A,D RDS(ON) = 64m(max.) @ VGS =-10VS RDS(ON) = 96m(max.) @ VGS =-4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23N (RoHS Compliant) ESD ProtectionDNote : The diode connected between the gate andsource serves only as protection against ESD. Nog

APM2360A N-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/2.7A ,DRDS(ON)=104m (max.) @ VGS=10VS RDS(ON)=130m (max.) @ VGS=4.5VG 100% UIS + Rg Tested Reliable and RuggedTop View of SOT-23 Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in DC/AC Inverer Systems.SN-Channel MOSFETOrdering and Marking Informa

APM2300CAN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A ,DRDS(ON)=25m (typ.) @ VGS=10VSRDS(ON)=32m (typ.) @ VGS=4.5VGRDS(ON)=40m (typ.) @ VGS=2.5VRDS(ON)=65m (typ.) @ VGS=1.8V Top View of SOT-23 Reliable and RuggedD Lead Free and Green Devices Available(RoHS Compliant)GApplications Power Management in Notebook Computer,Port

SM2221CSQG Dual Enhancement Mode MOSFET (N- and P-Channel)Features Pin Description N-Channel 12V/6.8A,S2G2D1D1 RDS(ON)= 21m(max.) @ VGS=4.5VD2 RDS(ON)= 27m(max.) @ VGS=2.5VD2 RDS(ON)= 39m(max.) @ VGS=1.8VG1Pin 1S1 RDS(ON)= 62m(max.) @ VGS=1.5VDFN2x2-6 P-Channel -12V/-4.4A, RDS(ON)= 50m(max.) @ VGS=-4.5V(3)D2(6)D1 RDS(ON)= 65

SM2A01NSF/SM2A01NSFP N-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/65A, RDS(ON)= 28m (max.) @ VGS= 10V Reliable and RuggedS SD DG G Lead Free and Green Devices AvailableTop View of TO-220 Top View of TO-220-FP(RoHS Compliant)DApplicationsG Synchronous Rectification. Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Markin

SM2208NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 24V/12A,DDRDS(ON) = 5.8m (max.) @ VGS =10VRDS(ON) = 6.9m (max.) @ VGS =4.5VG SPin 1DDRDS(ON) = 10m (max.) @ VGS =2.5V 100% UIS + Rg TestedDFN2x2A-6_EP Reliable and Rugged(1,2,5,6)DDDD Lead Free and Green Devices Available (RoHS Compliant)Applications(3)G Battery Management A

SM2A01NSF/SM2A01NSFP N-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/65A, RDS(ON)= 28m(max.) @ VGS= 10V Reliable and RuggedS SD DG G Lead Free and Green Devices AvailableTop View of TO-220 Top View of TO-220FP(RoHS Compliant) 100% UIS + Rg TestedDApplicationsG Synchronous Rectification. Power Management in Inverter Systems.SN-Ch

SM2518NUBN-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/50A,RDS(ON)=8m (Typ.) @ VGS=10VRDS(ON)=15m (Typ.) @ VGS=4.5VSD Reliable and RuggedG Avalanche Rated Lead Free and Green Devices AvailableTop View of TO-251(RoHS Compliant) 100% UIS + Rg TestedDApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Channel

SM2309PSAP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-3.1A,DRDS(ON) = 95m (max.) @ VGS =-10VSRDS(ON) = 150m (max.) @ VGS =-4.5VG Reliable and RuggedTop View of SOT-23-3 Lead Free and Green Devices Available(RoHS Compliant)DGApplications Power Management in Notebook Computer,Portable Equipment and Battery PoweredSSystems.P-Channel MO

SM2308NSA N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/5.2A ,D RDS(ON)= 35m (max.) @ VGS=10VS RDS(ON)= 45m (max.) @ VGS=4.5VG 100% UIS + Rg Tested Reliable and RuggedTop View of SOT-23 Lead Free and Green Devices Available(RoHS Compliant) D ESD ProtectionGApplications Load Switch. DC-DC converter.S Power Management Function.N-Channel

SM2004NSD N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/7A, RDS(ON)= 22m (max.) @ VGS= 10VSD RDS(ON)= 28m (max.) @ VGS= 4.5VG RDS(ON)= 54m (max.) @ VGS= 2.5V 100% UIS and Rg testedTop View SOT-89 ESD Protection Reliable and RuggedD (2) Lead Free and Green Devices Available (RoHS Compliant)G (1)Applications Switching Regulators.S (3) Sw

SM2331PSA P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-3.9A, DRDS(ON)= 60m (Max.) @ VGS=-4.5VSRDS(ON)= 90m (Max.) @ VGS=-2.5VGRDS(ON)=150m (Max.) @ VGS=-1.8VTop View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in Notebook Computer,Portable Equipment and Battery Powere

SM2311PSAP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-3.8A,DRDS(ON) = 62m(max.) @ VGS =-10VSRDS(ON) = 90m(max.) @ VGS =-4.5VG ESD ProtectionTop View of SOT-23 100% UIS + Rg Tested Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)Applications G Power Management in Notebook Computer,Portable Equipment and Ba

SM2605PSCP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-7.5A,SDRDS(ON) = 30m(max.) @ VGS =-10VDGRDS(ON) = 45m(max.) @ VGS =-4.5VDD Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-6(RoHS Compliant)(1,2,5,6)DD DDApplications(3)G Power Management in Notebook Computer,Portable Equipment and Battery Powe

SM2613PSC P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-5.6A ,SDRDS(ON)= 45m (Max.) @ VGS=-4.5VDGRDS(ON)= 66m (Max.) @ VGS=-2.5VDDRDS(ON)=104m (Max.) @ VGS=-1.8V 100% UIS + Rg TestedTop View of SOT-23-6 Reliable and Rugged Lead Free and Green Devices Available (1,2,5,6)DD DD(RoHS Compliant)Applications(3)G Power Management in Noteb

SM2313PSA P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-3.5A, DRDS(ON)= 73m (Max.) @ VGS=-4.5VSRDS(ON)= 110m (Max.) @ VGS=-2.5VGRDS(ON)= 193m (Max.) @ VGS=-1.8VTop View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in Notebook Computer,Portable Equipment and Battery Powe

APM2309A P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-2.2A,DRDS(ON)= 105m (typ.) @ VGS= -10VS RDS(ON)= 165m (typ.) @ VGS= -4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-3 (RoHS Compliant)DApplicationsG Power Management in Notebook Computer,Portable Equipment and Battery PoweredSystems.SP-Channel M

SM2315PSAP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-5A,DRDS(ON) = 42m (max.) @ VGS =-10VSRDS(ON) = 64m (max.) @ VGS =-4.5VG Reliable and RuggedTop View of SOT-23-3 Lead Free and Green Devices Available(RoHS Compliant)DGApplications Power Management in Notebook Computer,SPortable Equipment and Battery PoweredP-Channel MOSFETSystems

SM2320NSAN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6.3A ,DRDS(ON)=23m (max.) @ VGS=10VRDS(ON)=27m (max.) @ VGS=4.5VSRDS(ON)=40m (max.) @ VGS=2.5VGRDS(ON)=72m (max.) @ VGS=1.8V ESD Protection Top View of SOT-23-3 Reliable and RuggedD Lead Free and Green Devices Available(RoHS Compliant)GApplications Power Management in Notebook Comput

SM2413PSAN P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD -20V/-3.5A,RDS(ON)= 73m (Max.) @ VGS=-4.5VSRDS(ON)= 110m (Max.) @ VGS=-2.5VGRDS(ON)= 193m (Max.) @ VGS=-1.8V Reliable and RuggedTop View of SOT-23N Lead Free and Green Devices Available(RoHS Compliant)DApplicationsG Power Management in Notebook Computer,Portable Equipment and

SM2609PSCP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-4A, SDRDS(ON) = 85m(max.) @ VGS =-10VDGDRDS(ON) = 135m(max.) @ VGS =-4.5VD Reliable and RuggedTop View of SOT-23-6 Lead Free and Green Devices Available(RoHS Compliant)(1,2,5,6)DD DDApplications(3)G Power Management in Notebook Computer,Portable Equipment and Battery Powere

APM2518NU N-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/50A,DRDS(ON)=8m (Typ.) @ VGS=10VSRDS(ON)=15m (Typ.) @ VGS=4.5VG Reliable and Rugged Avalanche RatedTop View of TO-252-3 Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrdering and Markin

SM2A18NSVN-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/1.1A,RDS(ON)= 1140m(max.) @ VGS= 10VG RDS(ON)= 1300m(max.) @ VGS= 4.5VDS 100% UIS+Rg tested Reliable and RuggedTop View SOT-223 Lead Free and Green Devices AvailableD (RoHS Compliant)ApplicationsG Power Management in TV Inverter.S N-Channel MOSFETOrdering and Marking In

CSM260 N PD TC=25 250 W 2.0 W/ ID VGS=10V,TC=25 35 A ID VGS=10V,TC=100 28 A IDM 140 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.5 /W RthJA 48 /W BVDSS VGS=0V,ID=1.0mA 200 V VGS=10V,ID=28A 0.

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Product specificationWNM2024 Single N-Channel, 20V, 3.9A, Power MOSFET VDS (V) Rds(on) ()0.027@ VGS=4.5V20 0.031@ VGS=2.5V0.036@ VGS=1.8VSOT-23 Descriptions D 3 The WNM2024 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trenchtechnology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in 1 2 DC

Product specificationWPM2015Single P-Channel, -20V, -2.4A, Power MOSFET VDS (V) Rds(on) ( )0.081@ VGS= 4.5V-200.103@ VGS= 2.5VSOT-23 DescriptionsDThe WPM2015 is P-Channel enhancement 3MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use in DC-DC conversion, power s

Product specificationWNM2034N-Channel, 20V, 3.6A, Power MOSFET VDS (V) Rdson ( )0.037 @ 10V200.045 @ 4.5VDescriptionsSOT-23 The WNM2034 is N-Channel enhancement MOS DField Effect Transistor. Uses advanced trench technology 3and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion and power switch application

SMD Type MOSFETSMD Type TrMOSFETSMDTypeSMDTypeSMDType rSMDType ICSMD Type ICSMD Type oICSMD Type ansistICsProduct specificationKDS3601Features1.3 A, 100 V. RDS(ON) = 480m @VGS =10 VRDS(ON) = 530m @VGS =6VLow gate charge (3.7 nC typical)Fast switching speedHigh performance trench technology for extremely low RDS(ON)High power and current handling capabilityAbs

Product specificationWNM2027N-Channel, 20V, 3.6A, Power MOSFET Rds(on) IdV(BR)DSS(Max. m) (A) 45 @ 4.5V 3.6 20 55 @ 2.5V 3.1 66 @ 1.8V 1.5 SOT-23 DDescriptions3The WNM2027 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC

Product specificationWNM2025 Single N-Channel, 20V, 3.9 A, Power MOSFET VDS (V) Rds(on) ()0.027@ VGS=4.5V20 0.031@ VGS=2.5V0.036@ VGS=1.8VSOT-23-3L Descriptions D 3 The WNM2025 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trenchtechnology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in 1 2

Product specificationWNM2020N-Channel, 20V, 0.90A, Small Signal MOSFET VDS (V) Rds(on) ( )0.220@ VGS=4.5V20 0.260@ VGS=2.5V0.320@ VGS=1.8VSOT-23 DescriptionsThe WNM2020 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)D3with low gate charge. This device is suitable for use in DC-DC convers

Product specificationWNM2023 Single N-Channel, 20V, 3.2A, Power MOSFET VDS (V) Rds(on) ()0.038@ VGS=4.5V20 0.044@ VGS=2.5V0.052@ VGS=1.8VSOT-23-3L Descriptions D 3 The WNM2023 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trenchtechnology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC

Product specificationWNM2016N-Channel, 20V, 3.2A, Power MOSFET V(BR)DSS Rds(on) 40 @ 4.5V 20 47 @ 2.5V 55 @ 1.8V SOT-23 DDescriptions3The WNM2016 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC 21conversion and power swit

Product specificationWPM2341AP-Channel Enhancement Mode MosfetFeatures Higher Efficiency Extending Battery Life Miniature SOT23-3 Surface Mount Package3 Super high density cell design for extremely low RDS (ON) 12Applications DC/DC Converter Load Switch SOT 23-3 Battery Powered System LCD Display inverter Power Management in Portable, Battery P

Product specificationWPM2026 Single P-Channel, -20V, -3.2A, Power MOSFET VDS (V) Rds(on) ( ) 0.056@ VGS= 4.5V -20 0.069@ VGS= 2.5V 0.086@ VGS= 1.8V SOT-23 Descriptions D 3 The WPM2026 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in

DGF30F65M230A 650V Trenchstop Insulated Gate Bipolar Transistor1 DescriptionUsing DongHai's proprietary Trench design and advanceFS technology, the 650V FS IGBT offers superior andswitching performances, high avalanche ruggednesseasy parallel operation2 Features FS Trench Technology, Positive temperaturecoefficient Low saturation voltage: VCE(sat), typ = 1.9V@ I =30A

DGC20F65M220A 650V Trenchstop Insulated Gate Bipolar Transistor1 DescriptionUsing DongHai's proprietary Trench design and advanceFS technology, the 650V FS IGBT offers superior andswitching performances, high avalanche ruggednesseasy parallel operation2 Features FS Trench Technology, Positive temperaturecoefficient Low saturation voltage: VCE(sat), typ = 1.8V@ I =20A

DGC40F65M240A 650V Trenchstop Insulated Gate Bipolar Transistor1 DescriptionUsing DongHai's proprietary Trench design and advanceFS technology, the 650V FS IGBT offers superior andswitching performances, high avalanche ruggednesseasy parallel operation2 Features FS Trench Technology, Positive temperaturecoefficient Low saturation voltage: VCE(sat), typ = 1.85V@ I =40

DGC40F120M240A 1200V Trenchstop Insulated Gate Bipolar Transistor1 DescriptionThese Insulated Gate Bipolar Transistor used advancedtrench and Fieldstop technology design, provided excellentVcesat and switching speed ,low gate charge. Whichaccords with the RoHS standard.2 Features Low Vcesat Low gate charge Excellent switching speed Easy paralleling capability d

DGD06F65M26A 650V Trenchstop Insulated Gate Bipolar Transistor1 DescriptionUsing DongHai's proprietary Trench design and advanceFS technology, the 650V FS IGBT offers superior andswitching performances, high avalanche ruggednesseasy parallel operation2 Features FS Trench Technology, Positive temperaturecoefficient Low saturation voltage: VCE(sat), typ = 1.73V@ I =6A

DGC75F120M2 75A 1200V Trenchstop Insulated Gate Bipolar Transistor 1 Description Using DongHai's proprietary Trench design and advance FS technology, the 1200V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation 2 Features FS Trench Technology, Positive temperature coefficient Low saturation voltage: V , typ = 2.1V

DGC40H120M240A 1200V Trenchstop Insulated Gate Bipolar Transistor1 DescriptionThese Insulated Gate Bipolar Transistor used advancedtrench and Fieldstop technology design, provided excellentVcesat and switching speed ,low gate charge. Whichaccords with the RoHS standard.2 Features Low Vcesat Low gate charge Excellent switching speed Easy paralleling capability d

DGE20F65M220A 650V Trenchstop Insulated Gate Bipolar Transistor1 DescriptionUsing DongHai's proprietary Trench design and advancedFS technology, the 650V FS IGBT offers superiorswitching performances, high avalanche ruggedness andeasy parallel operation2 Features FS Trench Technology, positive temperature coefficient Low saturation voltage: V (sat), typ = 1.8VCE@ I =

DGC50F65M250A 650V Trenchstop Insulated Gate Bipolar Transistor1 DescriptionUsing DongHai's proprietary Trench design and advanceFS technology, the 650V FS IGBT offers superior andswitching performances, high avalanche ruggednesseasy parallel operation2 Features FS Trench Technology, Positive temperaturecoefficient Low saturation voltage: VCE(sat), typ = 1.8V@ IC =50

DJC070N65M2 70A 650V N-channel Super Junction Power MOSFET 1 Description This N-channel enhanced vdmosfets, is using advanced super junction technology and design to provide excellent 2 DV = 650V DSSRds(on) with low gate charge. Which accords with the R =63m DS(on) (TYP)GRoHS standard. 1I = 70A D3 S2 Features Fast switching Low on resistance

SMD Type MOSFETP-Channel MOSFETWPM2015 (KPM2015)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) =-20V ID =-2.4 A1 2+0.1+0.050.95-0.1 0.1-0.01 RDS(ON) 110m (VGS =-4.5V)+0.11.9-0.1 RDS(ON) 150m (VGS =-2.5V) Supper high density cell design1. Gate2. SourceD3. Drain31 2G S Absolute Maximum Rating

SMD Type MOSFETN-Channel MOSFETUTM2054 (KTM2054)1.70 0.1 Features VDS (V) = 20V ID = 5 A (VGS = 10V) RDS(ON) 40m (VGS = 10V)0.42 0.10.46 0.1 RDS(ON) 54m (VGS = 4.5V) RDS(ON) 130m (VGS = 2.5V)1.Gate Fast switching capability2.Drain3.SourceDrainGateSource Absolute Maximum Ratings Ta = 25Parameter Symbol Rat

SMD Type MOSFETP+Schottky Hybrid MOSFETWPM2005B (KPM2005B)DFN3X2-8L Unit:mm 0.35 (max)0.05 (max)0.24 (min) Features VDS (V) =-20V ID =-2.7 A (VGS =-10V) RDS(ON) 125m (VGS =-4.5V)0.25 (max)0.08 (min) RDS(ON) 160m (VGS =-2.5V)0.65 BSC0.80 0.13.00 BSC Ultra Low VF Schottky1 8A C72A C6S D3G D45 Absolu

SMD Type MOSFETN-Channel MOSFETWNM2020 SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) = 20V ID = 0.83 A1 2 RDS(ON) 310m (VGS = 4.5V)+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1 RDS(ON) 360m (VGS = 2.5V) RDS(ON) 460m (VGS = 1.8V)1. Gate2. SourceD3. Drain31 2G S Absolute Maximum Ratings Ta = 2

SGM25PA12A8TFD 25A/1200V IGBT SGM25PA12A8TFD 25A/1200VVCE(sat)( ) =2.1V@IC=25A VCE(sat) A8 DBC

SGM200HF12A3TFD 200A, 1200V IGBT 0B SGM200HF12A3TFD 1B 200A1200VVCE(sat)( ) =2.2V@IC=200A VCE(sat) DBC A3

SGT10U60SDM2D 10A600V C2SGT10U60SDM2D 4 PlusField Stop IV+ 1G UPS,SMPS PFC 3E 10A600VVCE(sat)( )=1.65V@ IC=10A

RU3030M2N-Channel Advanced Power MOSFETFeatures Pin Description 30V/30A, RDS (ON) =10m(Typ.)@VGS=10VDDD RDS (ON) =15m(Typ.)@VGS=4.5V D Super High Dense Cell Design Fast Switching Speed Low gate Charge 100% avalanche tested GSSS Lead Free and Green Devices Available (RoHS Compliant)PIN1PIN1PDFN3333DApplications Switching Applic

RU30E60M2N-Channel Advanced Power MOSFETFeatures Pin Description 30V/60A, RDS (ON) =3m(Typ.)@VGS=10VDDD RDS (ON) =6m(Typ.)@VGS=4.5V D Super High Dense Cell Design Ulta Low On-Resistance ESD Protected(Rating 4KV HBM) Fast Switching Speed GSSS 100% avalanche testedPIN1 Lead Free and Green Devices Available (RoHS Compliant)PIN1PDFN33

RUH4040M2N-Channel Advanced Power MOSFETFeatures Pin Description 40V/40A,RDS (ON) =5.5m(Typ.)@VGS=10V DDDDRDS (ON) =8m(Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche testedG Lead Free and Green Devices Available (RoHS Compliant)SSSPIN1PIN1PDFN3333DApplications DC/DC Converters On board power for

RUH3051M2N-Channel Advanced Power MOSFETFeatures Pin Description 30V/50A,RDS (ON) =4.2m(Typ.)@VGS=10V DDDDRDS (ON) =6m(Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche testedG Lead Free and Green Devices Available (RoHS Compliant)SSSPIN1PIN1PDFN3333DApplications DC/DC Converters On board power for

RU30D20M2N-Channel Advanced Power MOSFETFeatures Pin Description 30V/20A, RDS (ON) =8.5m(Typ.)@VGS=10VD2D2D1D1 RDS (ON) =11.5m(Typ.)@VGS=4.5V Super High Dense Cell Design Fast Switching Speed Low gate ChargeG2 100% avalanche testedS1G1S2 Lead Free and Green Devices Available (RoHS Compliant) PIN1PIN1PDFN3333D1 D2Applications Switchi

RU3040M2N-Channel Advanced Power MOSFETFeatures Pin Description 30V/40A,RDS (ON) =5.8m(Typ.)@VGS=10VDDDRDS (ON) =8.2m(Typ.)@VGS=4.5VDRDS (ON) =16.8m(Typ.) @VGS=2.5V Super High Dense Cell Design Fast Switching Speed Low gate Charge GSSS 100% avalanche testedPIN1 Lead Free and Green Devices Available (RoHS Compliant)PIN1PDFN3333D

RUQ4040M2N-Channel Advanced Power MOSFETFeatures Pin Description 40V/40A,RDS (ON) =5m(Typ.)@VGS=10VDDDDRDS (ON) =6.5m(Typ.)@VGS=4.5V AEC-Q101 Qualified for Automotive Applications Ultra Low On-Resistance Uses Ruichips Advanced RUISGTTM Technology 100% Avalanche TestedGSS Lead Free and Green Devices (RoHS Compliant)SPIN1PDFN3333D

AiT Semiconductor Inc. AM2304 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES AM2304 is available in a SOT-23 package. 30V/5.1A R = 25m(max.) @ V = 10V DS(ON) GSR = 35m(max.) @ V = 4.5V DS(ON) GS Reliable and Rugged Available in a SOT-23 package. ORDERING INFORMATION APPLICATION Power Management in Notebook Computer, Por

AiT Semiconductor Inc. AM2N7002 www.ait-ic.com SMALL SIGNAL MOSFET 115mA, 60 VOLTS N-CHANNEL MOSFET DESCRIPTION FEATURES Available in SOT-23 and SC70-3 packages. ESD Protected: 1000V Available in SOT-23 and SC70-3 packages ORDERING INFORMATION N CHANNEL MOSFET Package Type Part Number AM2N7002E3R SOT-23 E3 AM2N7002E3VR SC70-3 AM2N7002C3R C3 (SOT-323) AM2N7002C3

AiT Semiconductor Inc. AM2303 www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM2303 is the P-Channel logic enhancement -30V/-4.3A, R =50m(typ.)@V =-10V DS(ON) GSmode power field effect transistor is produced using -30V/-3.5A, R =58m(typ.)@V =-4.5V DS(ON) GShigh cell density. advanced trench technology to -30V/-2.5A, R =73m(typ.

AiT Semiconductor Inc. AM2301 www.ait-ic.com MOSFET -20V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM2301 is the P-Channel logic enhancement -20V/-3.2A, R =90m(typ.)@V =-4.5V DS(ON) GSmode power field effect transistor is produced using -20V/-2.0A, R =130m(typ.)@V =-2.5VDS(ON) GShigh cell density. Advanced trench technology to Super high density cell de

AiT Semiconductor Inc. AM2305 www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM2305 is the P-Channel logic enhancement -30V/-4A, R = 55m@V = -10V DS(ON) GS mode power field effect transistor is produced using -30V/-3A, R = 64m@V = -4.5V DS(ON) GShigh cell density. Advanced trench technology to -30V/-2A, R = 85m@V = -2.5V DS(ON)

AiT Semiconductor Inc. AM2N7002K www.ait-ic.com MOSFET SMALL SIGNAL MOSFET 380mA, 60 VOLTS DESCRIPTION FEATURES The AM2N7002K is available in SOT-23 Package ESD Protected Low R DS(ON) Surface Mount Package RoHS Compliant Available in SOT-23 package ORDERING INFORMATION APPLICATION Low Side Load Switch Package Type Part Number Level Shift Circ

AiT Semiconductor Inc. AM2319 www.ait-ic.com MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES AM2319 is available in a SOT-23S package. -40V/-3A, R = 80m(max.) @ V = -10V DS(ON) GSR = 120m(max.) @ V = -4.5V DS(ON) GS Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Available in a SOT-23S package. ORDERING INFORM

AiT Semiconductor Inc. AM2306 www.ait-ic.com -30V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM2306 is the N-Channel logic enhancement -30V/3.6A, R = 45m(typ.)@V = 10V DS(ON) GSmode power field effect transistor is produced using 30V/2.8A, R = 55m(typ.)@V = 4.5V DS(ON) GShigh cell density. Advanced trench technology to Super high density cell desi

AiT Semiconductor Inc. AM2N7002DW www.ait-ic.com N-CHANNEL MOSFET SMALL SIGNAL MOSFET 115mA, 60 VOLTS DESCRIPTION FEATURES Available in SOT-363 package. ESD Protected: 1000V Available in SOT-363 package ORDERING INFORMATION N CHANNEL MOSFET Package Type Part Number SOT-363 AM2N7002DWC6R C6 (SC70-6) AM2N7002DWC6VR V: Halogen free Package Note R: Tape & Reel SPQ:

AM2317 AiT Semiconductor Inc. www.ait-ic.com MOSFET -20V P-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM2317 is the P-Channel logic enhancement -20V/-4.6A, R =35m(typ.)@V =-4.5V DS(ON) GSmode power field effect transistor is produced using -20V/-4.1A,R =45m(typ.)@V =-2.5V DS(ON) GShigh cell density advanced trench technology. -20V/-3.6A,R =53m(t

AiT Semiconductor Inc. AM2342 www.ait-ic.com MOSFET 20V N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM2342 is the N-Channel logic enhancement 20V/5.0A, R =25m(typ.)@V =4.5V DS(ON) GSmode power field effect transistor is produced using 20V/4.5A, R =34m(typ.)@V =2.5V DS(ON) GShigh cell density. Advanced trench technology to 20V/4.0A, R =48m(typ.)@V =1.8

AiT Semiconductor Inc. AM2308 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES AM2308 is available in a SOT-23 package. 60V/2.7A, R = 104m(max.) @ V = 10V DS(ON) GSR = 130m(max.) @ V = 4.5V DS(ON) GS Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Available in a SOT-23 package. ORDERING INFORMATI

AiT Semiconductor Inc. AM2300 www.ait-ic.com MOSFET 20V N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM2300 is the N-Channel logic enhancement 20V/4.0A, R =26m(typ.)@V =4.5V DS(ON) GSmode power field effect transistor is produced using 20V/3.0A, R =31m(typ.)@V =2.5V DS(ON) GShigh cell density. Advanced trench technology to 20V/2.0A, R =44m(typ.)@V =1.8

AiT Semiconductor Inc. AM2N7002W www.ait-ic.com N-CHANNEL MOSFET SMALL SIGNAL MOSFET 115mA, 60 VOLTS DESCRIPTION FEATURES Available in SOT-323 package. ESD Protected: 1000V Available in SOT-323 package ORDERING INFORMATION N CHANNEL MOSFET Package Type Part Number SOT-323 AM2N702WC3R C3 (SC70-3) AM2N702WC3VR V: Halogen free Package Note R: Tape & Reel SPQ: 3,0

Pb Free Product BLM2302 N-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe BLM2302 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES V = 20V,I = 2.9A D

Green Product BLM22N10 100V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM22N10 uses advanced trench technology to provide V = 100V,I = 50A DS Dexcellent R , low gate charge. It can be used in a wide R

ROHS Product BLM2010E N-Channel Enhancement Mode Power MOSFET Description The BLM2010E uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features V = 20V,I =7A DS DTyp.R

Pb Free Product BLM2301 P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe BLM2301 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram V = -20V,I = -3A DS DR

Pb Free Product BLM2305 P-Channel Enhancement Mode Power MOSFET Description D The BLM2305 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features V = -20V,I = -4.2ADS D RDS(ON)

CHENMKO ENTERPRISE CO.,LTDCHM2313QGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4.6 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-74/SOT-457FEATURE* Small flat package. (SC-74/SOT-457)* High density cell design for extremely low RDS(ON). * Rugged and reliable. (1) (6)

CHENMKO ENTERPRISE CO.,LTDCHM2316GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High sat

CHENMKO ENTERPRISE CO.,LTDCHM2082JGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 11 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High satu

CHENMKO ENTERPRISE CO.,LTDCHM2407JGPSURFACE MOUNT Dual P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 5.3 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High

CHENMKO ENTERPRISE CO.,LTDCHM2316QGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 6 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-74/SOT-457FEATURE* Small flat package. (SC-74/SOT-457)* High density cell design for extremely low RDS(ON). * Rugged and reliable. (1) (6)*

CHENMKO ENTERPRISE CO.,LTDCHM20P06PAGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 13 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small flat package. ( TO-252 )* High density cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* Rugged

CHENMKO ENTERPRISE CO.,LTDCHM2304GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 2.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High sat

CHENMKO ENTERPRISE CO.,LTDCHM2301ESGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 2.8 AmpereAPPLICATION* Po rtable* High speed switchFEATURESOT-23* Small surface mounting type. (SOT-23)* High density cell design for low RDS(ON)* Suitable for high packing density.* Rugged and reliable.(1)* High saturation current capabili

CHENMKO ENTERPRISE CO.,LTDCHM25N15LPAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect TransistorVOLTAGE 150 Volts CURRENT 25 AmpereAPPLICATION* Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON)..094 (2.40).280 (7.10)* High power and current handing capa

CHENMKO ENTERPRISE CO.,LTDCHM2331GPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 4.2 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High sat

CHENMKO ENTERPRISE CO.,LTDCHM21A2PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 20 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power

CHENMKO ENTERPRISE CO.,LTDCHM21A3PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 20 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power

CHENMKO ENTERPRISE CO.,LTDCHM2331QGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 4.2 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-74/SOT-457FEATURE* Small flat package. (SC-74/SOT-457)* High density cell design for extremely low RDS(ON). * Rugged and reliable. (1) (6)

CHENMKO ENTERPRISE CO.,LTDCHM2362GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 3 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High satur

CHENMKO ENTERPRISE CO.,LTDCHM2310GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.* High saturati

CHENMKO ENTERPRISE CO.,LTDCHM2314GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High satur

CHENMKO ENTERPRISE CO.,LTDCHM2703QGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 7 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-74/SOT-457FEATURE* Small flat package. (SC-74/SOT-457)* High density cell design for extremely low RDS(ON). * Rugged and reliable. (1) (6)*

CHENMKO ENTERPRISE CO.,LTDCHM2108JGPSURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 9.5 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged an

CHENMKO ENTERPRISE CO.,LTDCHM210BGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect TransistorVOLTAGE 100 Volts CURRENT 1.3 AmpereAPPLICATION* Servo motor control.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON).* Rugged and reliable.(2)* High saturation current capability.(3)

CHENMKO ENTERPRISE CO.,LTDCHM2313GPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 3.6 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High sat

CHENMKO ENTERPRISE CO.,LTDCHM2321GPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 3.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)(3) 0.95

CHENMKO ENTERPRISE CO.,LTDCHM2323GPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4.1 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High sat

CHENMKO ENTERPRISE CO.,LTDCHM2401JGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 6 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High power a

CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNT CHM2030JGPDual Enhancement Mode Field Effect TransistorN-channel: VOLTAGE 20 Volts CURRENT 6 AmpereP-channel: VOLTAGE 20 Volts CURRENT 4.3 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low R

CHENMKO ENTERPRISE CO.,LTDCHM2313GP-ASURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 3.6 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High s

CHENMKO ENTERPRISE CO.,LTDCHM2346ESGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect TransistorVOLTAGE 60 Volts CURRENT 2.9 AmpereAPPLICATION* Servo motor control.* Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON).* Rugged and reliable.(2)* High satu

CHENMKO ENTERPRISE CO.,LTDCHM2308ESGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 5.4 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High s

CHENMKO ENTERPRISE CO.,LTDCHM2307GPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 3.2 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High sat

CHENMKO ENTERPRISE CO.,LTDCHM20N06PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 20 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power

CHENMKO ENTERPRISE CO.,LTDCHM2305GPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High satur

CHENMKO ENTERPRISE CO.,LTDCHM2342GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts CURRENT 4.2 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High sat

CTM2N7002Crownpo TechnologySmall Signal MOSFETFeatures General DescriptionHigh Density Cell Design for Low RDS(ON)This N-Channel enhancement mode field effect transistorVoltage Controlled Small Signal Switchis produced using high cell density,DMOS technology.TheseRugged and Reliableproducts have been designed to minimize on-stateHigh Saturation Current Capabilityresistance

DM2G75SH6AJuly. 2010High Power NPT & Rugged IGBT ModuleDescription Equivalent Circuit and Package DAWINS IGBT module devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drivesand other applications where switching losses are sign

PreliminaryD WTMD WTMApr. 2008DM2G150SH12ADAWIN ElectronicsDAWIN ElectronicsHigh Power SPT+ & Lugged Type IGBT ModuleDescriptionEquivalent Circuit and Package DAWINS IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power

PreliminaryDM2G100SH12AApr. 2008High Power SPT+ & Lugged Type IGBT ModuleDescriptionEquivalent Circuit and Package DAWINS IGBT 7DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power inverters, motors drives and other applications wh

DM2G300SH6AAug. 2009High Power NPT & Rugged Type IGBT ModuleDescription Equivalent Circuit and Package DAWINS IGBT 7DM-3 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drivesand other applications where switching los

DM2G100SH6NJan. 2012High Power Rugged Type IGBT ModuleDescriptionEquivalent Circuit and Package DAWINS IGBT module devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drivesand other applications where switching losses are sign

D WTMD WTMDM2G150SH6NDAWIN ElectronicsDAWIN ElectronicsJan. 2012High Power Rugged Type IGBT ModuleEquivalent Circuit and Package DescriptionDAWINS IGBT 7DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors dri

PreliminaryD WTMD WTMDAWIN ElectronicsDAWIN Electronics DM2G150SH12AEDec. 2008High Power SPT+ & Lugged Type IGBT ModuleDescriptionEquivalent Circuit and Package DAWINS IGBT 7DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power

D WTMD WTMDM2G200SH6ADAWIN ElectronicsDAWIN ElectronicsAug. 2009High Power NPT & Rugged Type IGBT ModuleDescriptionEquivalent Circuit and Package DAWINS IGBT 7DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, moto

D WTMD WTMDM2G150SH6ADAWIN ElectronicsDAWIN ElectronicsAug. 2009High Power NPT & Rugged Type IGBT ModuleDescriptionEquivalent Circuit and Package DAWINS IGBT 7DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, moto

PreliminaryD WTMD WTMDAWIN ElectronicsDAWIN Electronics DM2G200SH12AEDec. 2008High Power SPT+ & Lugged Type IGBT ModuleDescriptionEquivalent Circuit and Package Equivalent Circuit and PackageDAWINS IGBT 7DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modul

D WTMD WTMDM2G200SH6NDAWIN ElectronicsDAWIN ElectronicsJan. 2012High Power Rugged Type IGBT ModuleDescriptionEquivalent Circuit and Package DAWINS IGBT 7DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power inverters, motors drive

DM2G400SH6AAug. 2009High Power NPT & Rugged Type IGBT ModuleDescription Equivalent Circuit and Package DAWINS IGBT 7DM-3 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drivesand other applications where switching los

DM2G400SH6NJan. 2012High Power Rugged Type IGBT ModuleDescription Equivalent Circuit and Package DAWINS IGBT 7DM-3 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drivesand other applications where switching losses ar

DM2G50SH6AApr. 2008High Power NPT & Lugged Type IGBT ModuleDescriptionEquivalent Circuit and Package DAWINS IGBT module devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power inverters, motors drivesand other applications where switching losses are

D WTMD WTMDM2G300SH6NEDAWIN ElectronicsDAWIN ElectronicsJan. 2012High Power Rugged Type IGBT ModuleDescription Equivalent Circuit and Package DAWINS IGBT 7DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors dri

DM2G50SH6NJan. 2012High Power Rugged Type IGBT ModuleDescription Equivalent Circuit and Package DAWINS IGBT module devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drivesand other applications where switching losses are signif

PreliminaryD WTMD WTMDM2G300SH12ADAWIN ElectronicsDAWIN ElectronicsMar. 2008High Power SPT+ & Lugged Type IGBT ModuleDescriptionEquivalent Circuit and Package Equivalent Circuit and PackageDAWINS IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modul

DM2G100SH6AJuly. 2010High Power NPT & Rugged Type IGBT ModuleDescription Equivalent Circuit and Package DAWINS IGBT module devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drivesand other applications where switching losses ar

D WTMD WTMDM2G150SH6NEDAWIN ElectronicsDAWIN ElectronicsJan. 2012High Power Rugged Type IGBT ModuleEquivalent Circuit and Package DescriptionDAWINS IGBT module devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives6

DM2G75SH6NJan. 2012High Power Rugged Type IGBT ModuleDescription Equivalent Circuit and Package DAWINS IGBT module devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drivesand other applications where switching losses are signif

PreliminaryD WTMD WTMMar. 2008DM2G200SH12ADAWIN ElectronicsDAWIN ElectronicsHigh Power SPT+ & Lugged Type IGBT ModuleHigh Power SPT+ & Lugged Type IGBT ModuleDescriptionEquivalent Circuit and Package Equivalent Circuit and PackageDAWINS IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical syste

DM2G50SH12AMar. 2008High Power SPT+ & Lugged Type IGBT ModuleDescriptionEquivalent Circuit and Package DAWINS IGBT 7DM-1 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power inverters, motors drives and other applications where switching

Mar. 2008DM2G75SH12ADM2G75SH12AHigh Power SPT+ & Lugged Type IGBT ModuleDescriptionEquivalent Circuit and Package DAWINS IGBT 7DM-1 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power inverters, motors drives and other applications whe

DIM2400ESS12-A000 Single Switch IGBT Module Replaces DS5840-1.1 DS5840-2 October 2010 (LN27616) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V Non Punch Through Silicon IC (max) 2400A Isolated Cu Base with Al2O3 Substrates IC(PK) (max) 4800A Lead Free construction * Measured at the power busbars, not the auxiliary

DIM200PHM33-F000 Half Bridge IGBT Module Replaces DS5606-4 DS5606-5 October 2011 (LN28814) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.8V High Thermal Cycling Capability IC (max) 200A Soft Punch Through Silicon IC(PK) (max) 400A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals Le

DIM200PKM33-F000 IGBT Chopper Module Replaces DS5865-2 DS5865-3 October 2011 (LN28813) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.8V High Thermal Cycling Capability IC (max) 200A Soft Punch Through Silicon IC(PK) (max) 400A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals Lead F

DIM250PKM33-TS000 IGBT Chopper Module Replaces DS6106-1 DS6106-2 July 2013 (LN30763) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 250A High Current Density Enhanced DMOS SPT IC(PK) (max) 500A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals

DIM250PLM33-TL000 IGBT Chopper Module DS6115-1 July 2013 (LN30664) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10s Short Circuit Withstand IC (max) 250A High Thermal Cycling Capability IC(PK) (max) 500A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base with AlN Subs

DIM250PKM33-TL000 IGBT Chopper Module DS6117-1 July 2013 (LN30666) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10s Short Circuit Withstand IC (max) 250A High Thermal Cycling Capability IC(PK) (max) 500A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base with AlN Subs

DIM250PHM33-TL000 Half Bridge IGBT Module DS6116-1 July 2013 (LN30665) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10s Short Circuit Withstand IC (max) 250A High Thermal Cycling Capability IC(PK) (max) 500A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base with AlN

DIM250PHM33-TS000 Half Bridge IGBT Module DS6092-1 April 2013 (LN30402) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 250A High Current Density Enhanced DMOS SPT IC(PK) (max) 500A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals APPLICATIONS

DIM2400ESM17-A000 Single Switch IGBT Module Replaces DS54447-5 DS5447-6 June 2012 (LN29603) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1700V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 2400A Non Punch Through Silicon IC(PK) (max) 4800A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the aux

DIM250PLM33-TS000 IGBT Chopper Module Replaces DS6108-1 DS6108-2 July 2013 (LN30764) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 250A High Current Density Enhanced DMOS SPT IC(PK) (max) 500A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals

DIM2400ESM12-A000 Single Switch IGBT Module Replaces DS5536-3.0 DS5536-4 October 2010 (LN27615) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 2400A Non Punch Through Silicon IC(PK) (max) 4800A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the

DIM200PLM33-F000 IGBT Chopper Module Replaces DS5864-2 DS5864-3 October 2011 (LN28812) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.8V High Thermal Cycling Capability IC (max) 200A Soft Punch Through Silicon IC(PK) (max) 400A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals Lead F

Complementary MOSFET ELM24604HA-SGeneral Description Features ELM24604HA-S uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=40V Vds=-40Vand low gate charge. Id=8A(Vgs=10V) Id=-8A(Vgs=-10V) Rds(on)

Complementary MOSFET ELM24603HA-SGeneral Description Features ELM24603HA-S uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=60V Vds=-60Vand low gate charge. Id=12A(Vgs=10V) Id=-12A(Vgs=-10V) Rds(on)

GSM2317 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM2317, P-Channel enhancement mode -40V/-3.6A,RDS(ON)=52m@VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-3.2A,RDS(ON)=67m@VGS=-4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited f

GSM2319AS 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM2319AS, P-Channel enhancement mode -40V/-3.0A,RDS(ON)=90m@VGS=-10V MOSFET, uses Advanced Trench -40V/-2.4A,RDS(ON)=120m@VGS=-4.5VTechnology to provide excellent RDS(ON), low Super high density cell design for gate charge. extremely low RDS (ON) Exceptional on-resistance andThes

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2311, P-Channel enhancement mode -20V/-4.0A,RDS(ON)=56m@VGS=4.5V MOSFET, uses Advanced Trench -20V/-3.2A,RDS(ON)=70m@VGS=2.5V Technology to provide excellent RDS(ON), low -20V/-2.8A,RDS(ON)=96m@VGS=1.8V gate charge. Super high density cell design for These devices are particularly suited f

GSM2330 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM2330, N-Channel enhancement mode 90V/2.8A,RDS(ON)=190m@VGS=10V MOSFET, uses Advanced Trench Technology 90V/2.0A,RDS(ON)=200m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

GSM2519 GSM2519 20V N&P Pair Enhancement Mode MOSFETProduct Description Features GSM2519, N & P Pair enhancement mode N-ChannelMOSFET, uses Advanced Trench Technology to 20V/4.5A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON), low gate charge. 20V/3.6A,RDS(ON)=60m@VGS=2.5V 20V/2.4A,RDS(ON)=80m@VGS=1.8V These devices are particularly suited for low P-Channelvoltage

GSM2912 GSM2912 20V N-CH Enhancement Mode MOSFET Product Description Features GSM2912, N-Channel enhancement mode 20V/4.5A,RDS(ON)=50m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.6A,RDS(ON)=60m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.4A,RDS(ON)=78m@VGS=1.8V Super high density cell design for extremely These devices are particula

GSM2336A 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2336A, N-Channel enhancement mode 30V/1.8A,RDS(ON)=380m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 30V/1.5A,RDS(ON)=480m@VGS=2.5V provide excellent RDS(ON), low gate charge. 30V/1.2A,RDS(ON)=900m@VGS=1.8V Super high density cell design for extremely These devices are p

GSM2324 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM2324, N-Channel enhancement mode 100V/2.3A,RDS(ON)=285m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/1.8A,RDS(ON)=295m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for lo

GSM2303A GSM2303A 30V P-Channel Enhancement Mode MOSFET Product Description Features -30V/-2.8A,RDS(ON)=145m@VGS=-10.0V GSM2303A, P-Channel enhancement mode -30V/-2.4A,RDS(ON)=180m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-res

GSM2323 GSM2323 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM2323, P-Channel enhancement mode -30V/-3.6A,RDS(ON)=150m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-3.2A,RDS(ON)=235m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited fo

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301AS, P-Channel enhancement mode -20V/-2.4A,RDS(ON)=125m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.0A,RDS(ON)=170m@VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low voltage

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2367AS, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=80m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.5A,RDS(ON)=98m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-2.2A,RDS(ON)=130m@VGS=-1.8V These devices are particularly suited for low Super high density cell

GSM2304A 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304A, N-Channel enhancement mode 30V/2.6A,RDS(ON)=82m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=108m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low Exce

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2302AS, N-Channel enhancement mode 20V/2.4A,RDS(ON)=90m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/2.0A,RDS(ON)=110m@VGS=2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low Exceptional on-

GSM2330A 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM2330A, N-Channel enhancement mode 90V/2.8A,RDS(ON)=200m@VGS=10V MOSFET, uses Advanced Trench Technology 90V/2.0A,RDS(ON)=210m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

GSM2333A GSM2333A 25V P-Channel Enhancement Mode MOSFET Product Description Features -25V/-2.8A,RDS(ON)=145m@VGS=-10V GSM2333A, P-Channel enhancement mode -25V/-2.4A,RDS(ON)=180m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-resis

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301S, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=120m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.0A,RDS(ON)=170m@VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for These devices are particularly suited for low extremely low RDS (ON) volt

P-Channel Enhancement Mode MOSFET Product Description Features GSM2341, P-Channel enhancement mode -20V/-3.0A,RDS(ON)= 50m@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.6A,RDS(ON)= 64m@VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.0A,RDS(ON)= 80m@VGS=-1.8V Super high density cell design for extremely These devices are particularly suited

GSM2911 GSM2911 20V P-CH Enhancement Mode MOSFET Product Description Features GSM2911, P-Channel enhancement mode P-ChannelMOSFET, uses Advanced Trench Technology to -20V/-4.5A,RDS(ON)= 96m@VGS=-4.5V provide excellent RDS(ON), low gate charge. These -20V/-3.8A,RDS(ON)=128m@VGS=-2.5V devices are particularly suited for low voltage -20V/-2.5A,RDS(ON)=180m@VGS=-1.8V po

40V N-Channel Enhancement Mode MOSFET Product Description Features GSM2604, N-Channel enhancement mode 40V/20A,RDS(ON)= 22m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/12A,RDS(ON)= 40m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

GSM2309A 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM2309A, P-Channel enhancement mode -60V/-1.8A,RDS(ON)=305m@VGS=-10V MOSFET, uses Advanced Trench -60V/-1.6A,RDS(ON)=320m@VGS=-4.5V Technology to provide excellent RDS(ON), low Super high density cell design for gate charge. extremely low RDS (ON) Exceptional on-resistance and maxim

GSM2309 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM2309, P-Channel enhancement mode -60V/-1.8A,RDS(ON)=305m@VGS=-10V MOSFET, uses Advanced Trench -60V/-1.4A,RDS(ON)=320m@VGS=-4.5V Technology to provide excellent RDS(ON), low Super high density cell design for gate charge. extremely low RDS (ON) Exceptional on-resistance and maximum

GSM2354 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM2354, N-Channel enhancement mode 100V/3.2A,RDS(ON)=145m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/2.6A,RDS(ON)=160m@VGS=4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

GSM2318A 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM2318A, N-Channel enhancement mode 40V/2.6A,RDS(ON)=68m@VGS=10VMOSFET, uses Advanced Trench 40V/2.2A,RDS(ON)=88m@VGS=4.5VTechnology to provide excellent RDS(ON), low Super high density cell design for gate charge. extremely low RDS (ON) These devices are particularly suited for low

20V P-Channel Enhancement Mode MOSFET Product Description Features -20V/-2.6A,RDS(ON)=120m@VGS=-4.5V GSM2301A, P-Channel enhancement mode -20V/-2.2A,RDS(ON)=170m@VGS=-2.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) These devices are particularly suited for low