M2 - Даташиты. Аналоги. Основные параметры

MITSUBISHI IGBT MODULES CM200DY-24H HIGH POWER SWITCHING USE INSULATED TYPE A B F F G P C2E1 E2 C1 J C D P Description K Mitsubishi IGBT Modules are de- R Q - M6 THD N - DIA. signed for use in switching applica- (3 TYP.) (4 TYP.) tions. Each module consists of two TAB#110 t=0.5 IGBTs in a half-bridge configuration M L with each transistor having a re- M verse-conne

DMP22M2UPS Green 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package Cooler Running Applications BVDSS RDS(ON) max TC = +25 C High Conversion Efficiency Low RDS(ON) Minimizes On State Losses 2.5m @ VGS = -10V -60A -20V

MITSUBISHI HVIGBT MODULES CM200HG-130H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM200HG-130H IC ..................................................................200 A VCES ...................................................... 6500 V High Insulated Type 1-element in a Pack AISiC Baseplate

BM2300 N Channel Enhancement Mode MOSFET 4A DESCRIPTION The BM2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook

PM25CL1A120 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Intellimod L1-Series www.pwrx.com Three Phase IGBT Inverter 25 Amperes/1200 Volts P A TERMINAL E D CODE F G 1 VUPC 2 UFO 3 UP H J J J 4 VUP1 K K 5 VVPC K K 6 VFO F 7 VP 8 VVP1 L 9 VWPC M 10 WFO Y N 11 WP B 12 VWP1 1 5 9 19 13 VNC Y P 14 VN1 W 15 NC B U V W 16 UN

CM200DU-24F Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMOD 200 Amperes/1200 Volts A T - (4 TYP.) D TC MEASURED POINT U (4 PLACES) G2 H E2 C J B E L CM C2E1 E2 C1 E1 H G1 Description G Powerex IGBTMOD Modules Q Q P N S - NUTS are designed for use in switching (3 TYP) applications. Each m

CM200DY-28H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD H-Series Module 200 Amperes/1400 Volts A B F F G P C2E1 E2 C1 J C D P Description K Powerex IGBTMOD Modules R Q - M6 THD N - DIA. are designed for use in switching (3 TYP.) (4 TYP.) applications. Each module consists .110 TAB M of two IGBT Transistors in a

MITSUBISHI IGBT MODULES CM20MD-12H MEDIUM POWER SWITCHING USE INSULATED TYPE CM20MD-12H IC ..................................................................... 20A VCES ............................................................600V Insulated Type CIB Module 3 Inverter+3 Converter+Brake UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC & DC mo

CM2500DY-24S Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual Half-Bridge www.pwrx.com IGBT HVIGBT Series Module 2500 Amperes/1200 Volts A AN AS AP AQ H (12 PLACES) X AR G Y E2 G2 C2 F J (18 PLACES) F P L S E2 E2 L C2E1 D V C B C2E1 C1 C1 AA L L K Q AV K K T E FW AB F G1 E1 C1 P U R AW F AT AU AD N M (8 PLACES) AC

PD - 97441 IRF6723M2DTRPbF IRF6723M2DTR1PbF Applications l Dual Common Drain Control MOSFETs for DirectFET Power MOSFET Multiphase DC-DC Converters Typical values (unless otherwise specified) Features VDSS VGS RDS(on) RDS(on) l Replaces Two Discrete MOSFETs 30V max 20V max 5.2m @ 10V 8.6m @ 4.5V l Optimized for High Frequency Switching l Low Profile (

HM25P06D P-Channel Enhancement Mode Power MOSFET Description The HM25P06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-25A RDS(ON)

MITSUBISHI HVIGBT MODULES CM2400HC-34H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM2400HC-34H IC ................................................................ 2400A VCES ....................................................... 1700V Insulated Type 1-element in a Pack AISiC Baseplate Soft Reverse Recover

CM200DU-12NFH Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBT www.pwrx.com NFH-Series Module 200 Amperes/600 Volts TC MEASUREMENT POINT A N D M K K F E C2E1 E2 C1 S B H G F R J P - NUTS (3 TYP) U Q - (2 TYP) Description Powerex IGBT Modules are de- signed for use in high frequency applications; 30 kHz W W W W for hard switchi

JSM2622 N-Channel Enhancement Mode Power MOSFET N-Channel Enhancement Mode Power MOSFET D Description The JSM2622 uses advanced trench technology to G provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. S General Features Schematic diagram VDS = 20V,ID = 50A RDS(ON) Typ =4.5m @ VGS=10V 1 8 RDS(ON) =5.0m @ VGS=4.5V Typ

MITSUBISHI IGBT MODULES CM200DU-24NFH HIGH POWER SWITCHING USE CM200DU-24NFH IC ...................................................................200A VCES ......................................................... 1200V Insulated Type 2-elements in a pack APPLICATION High frequency switching use (30kHz to 60kHz). Gradient amplifier, Induction heating, power supply, etc. OUTL

N-Channel Enhancement Mode Power MOSFET D Description The JSM2050 uses advanced trench technology to G provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. S General Features Schematic diagram VDS = 20V,ID = 50A RDS(ON)

MITSUBISHI IGBT MODULES CM25MD-24H MEDIUM POWER SWITCHING USE INSULATED TYPE CM25MD-24H IC ..................................................................... 25A VCES ......................................................... 1200V Insulated Type CIB Module 3 Inverter+3 Converter+Brake UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC & DC mot

CM200RL-12NF Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Six IGBTMOD + Brake NF-Series Module 200 Amperes/600 Volts A D E F H H E G G G M K N L W V U E V AB CN B G B X 1 8 C N G AC X J WP VP UP P G Description W P 1 1 1 Powerex IGBTMOD Modules E are designed for use in switching R S S K applications. Each m

BSM 200 GAR 120 DN2 IGBT Power Module Single switch with chopper diode at collector Chopper diode like diode of BSM300GA120DN2 Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 200 GAR 120 DN2 1200V 290A HB 200GAR C67070-A2301-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE =

MITSUBISHI IGBT MODULES CM200E3U-24F HIGH POWER SWITCHING USE CM200E3U-24F IC ...................................................................200A VCES ......................................................... 1200V Insulated Type 1-element in a pack APPLICATION Brake OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 108 93 0.25 4 14 14 14 Tc measured point CM C2

PD - 97540 IRF6702M2DTRPbF IRF6702M2DTR1PbF Applications l Dual Common Drain Control MOSFETs for DirectFET Power MOSFET Multiphase DC-DC Converters Typical values (unless otherwise specified) Features VDSS VGS RDS(on) RDS(on) l Replaces Two discrete high side MOSFETs 30V max 20V max 5.2m @ 10V 8.6m @ 4.5V l Optimized for High Frequency Switching l Low Profile (

CM200DY-24A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBTMOD www.pwrx.com A-Series Module 200 Amperes/1200 Volts A F F E E G2 E2 G B J N H C2E1 E2 C1 E1 G1 G K K K M NUTS Description L D (3 PLACES) (2 PLACES) Powerex IGBTMOD Modules are designed for use in switching T THICK P P P applications. Each module Q Q U W

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM2A400A60M/D MHPM2A400A60M Preliminary Data Sheet Hybrid Power Module High Current IGBT Module 400 AMP, 600 VOLT HYBRID POWER MODULE 400 Amp, 600 Volt IGBT Half Bridge Low On Voltage, High Speed IGBTs Excellent Short Circuit Capability Fast Soft Recovery Diodes Low Inductance Package M6 bolts

PD - 91252A REPETITIVE AVALANCHE AND dv/dt RATED IRHM2C50SE IRHM7C50SE HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT (SEE) RAD HARD Product Summary 600Volt, 0.6 , (SEE) RAD HARD HEXFET Part Number BVDSS RDS(on) ID International Rectifier s (SEE) RAD HARD technology IRHM2C50SE 600V 0.60 10.4A HEXFETs demonstrate immunity to SEE failure. Ad- ditionally,

PD - 97648 AUIRL7766M2TR AUTOMOTIVE GRADE AUIRL7766M2TR1 Automotive DirectFET Power MOSFET V(BR)DSS 100V Advanced Process Technology Optimized for Automotive DC-DC and RDS(on) typ. 8.0m other Heavy Load Applications max. Logic Level Gate Drive 10m Exceptionally Small Footprint and Low Profile ID (Silicon Limited) 51A High Power Density Qg 44nC

PD - 91388C IRFM260 POWER MOSFET 200V, N-CHANNEL THRU-HOLE (TO-254AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM260 0.060 35A* HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on- state resistance combined with high transconductance. TO-254

AUTOMOTIVE GRADE AUIRF8736M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 1.3m other Heavy Load Applications max. 1.9m Exceptionally Small Footprint and Low Profile High Power Density ID (Silicon Limited) 137A Low Parasitic Paramete

PD - 90555D IRFM240 JANTX2N7219 JANTXV2N7219 POWER MOSFET REF MIL-PRF-19500/596 THRU-HOLE (TO-254AA) 200V, N-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFM240 0.18 18A HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- si

PD - 90554E IRFM250 JANTX2N7225 JANTXV2N7225 POWER MOSFET REF MIL-PRF-19500/592 THRU-HOLE (TO-254AA) 200V, N-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFM250 0.100 27.4A HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re-

PD - 97656 AUTOMOTIVE GRADE AUIRL7736M2TR AUIRL7736M2TR1 DirectFET Power MOSFET Logic Level V(BR)DSS 40V Advanced Process Technology Optimized for Automotive DC-DC, Motor Drive and RDS(on) typ. 2.2m other Heavy Load Applications max. 3.0m Exceptionally Small Footprint and Low Profile High Power Density ID (Silicon Limited) 112A Low Parasitic

PD - 96317B AUIRF7648M2TR AUTOMOTIVE GRADE AUIRF7648M2TR1 Automotive DirectFET Power MOSFET V(BR)DSS 60V Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 5.5m other Heavy Load Applications max. 7.0m Exceptionally Small Footprint and Low Profile High Power Density ID (Silicon Limited) 68A Low Parasitic Para

PD -97552 AUIRF7675M2TR AUTOMOTIVE GRADE AUIRF7675M2TR1 DirectFET Power MOSFET Advanced Process Technology V(BR)DSS Optimized for Class D Audio Amplifier Applications 150V Low Rds(on) for Improved Efficiency RDS(on) typ. 47m Low Qg for Better THD and Improved Efficiency max. 56m Low Qrr for Better THD and Lower EMI RG (typical) 1.2 Low Parasitic In

PD - 96316B AUIRF7736M2TR AUTOMOTIVE GRADE AUIRF7736M2TR1 Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 2.5m other Heavy Load Applications Exceptionally Small Footprint and Low Profile max. 3.0m High Power Density ID (Silicon Limited) 108A Low Parasitic Param

AUTOMOTIVE GRADE AUIRF8736M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 1.3m other Heavy Load Applications max. 1.9m Exceptionally Small Footprint and Low Profile High Power Density ID (Silicon Limited) 137A Low Parasitic Paramete

PHM21NQ15T TrenchMOS standard level FET Rev. 02 11 September 2003 Product data M3D879 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features SOT96 (SO8) footprint compatible Low thermal resistance Surface mounted package Low profile. 1.3 Applications DC-to-DC primary side Portab

BUK1M200-50SGTD Quad channel logic level TOPFET Rev. 01 31 March 2003 Product data 1. Product profile 1.1 Description Quad temperature and overload protected power switch based on TOPFET Trench technology in a 20-pin surface mount plastic package. Product availability BUK1M200-50SGTD in SOT163-1 (SO20). 1.2 Features Power TrenchMOS 5V logic compatible Overtemperature pro

PHM25NQ10T TrenchMOS standard level FET Rev. 03 11 September 2003 Product data M3D879 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features SOT96 (SO-8) footprint compatible Low thermal resistance Surface mounted package Low profile. 1.3 Applications DC-to-DC primary side Porta

BUK1M200-50SDLD Quad channel TOPFET Rev. 01 02 April 2003 Product data 1. Product profile 1.1 Description Quad temperature and overload protected logic level power MOSFET in TOPFET technology in a 20-pin surface mount plastic package. Product availability BUK1M200-50SDLD in SOT163-1 (SO20). 1.2 Features Power TrenchMOS 5 V logic compatible input level Overtemperature

STU9HN65M2 N-channel 600 V, 0.71 typ., 5.5 A MDmesh M2 Power MOSFET in an IPAK package Datasheet - production data Features Order code V R max. I DS DS(on) D TAB STU9HN65M2 600 V 0.82 5.5 A Extremely low gate charge 3 2 Excellent output capacitance (COSS) profile 1 100% avalanche tested Zener-protected IPAK Applications Switching applic

STB37N60DM2AG Automotive-grade N-channel 600 V, 0.094 typ., 28 A MDmesh DM2 Power MOSFET in a D PAK package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT TAB STB37N60DM2AG 600 V 0.110 28 A 210 W Designed for automotive applications and 3 AEC-Q101 qualified 1 Fast-recovery body diode Extremely low gate charge and input capa

STL16N65M2 N-channel 650 V, 0.325 typ., 7.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID STL16N65M2 710 V 0.395 7.5 A Extremely low gate charge 1 Excellent output capacitance (Coss) profile 2 3 4 100% avalanche tested Zener-protected PowerFLAT 5x6 HV Applications

STD7N65M2 N-channel 650 V, 0.98 typ., 5 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features RDS(on) Order code VDS max ID TAB STD7N65M2 650 V 1.15 5 A 3 Extremely low gate charge 1 Excellent output capacitance (Coss) profile 100% avalanche tested DPAK Zener-protected Applications Switching applications Figure 1. Inte

STL13N65M2 N-channel 650 V, 0.365 typ., 6.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features Order code VDS RDS(on) max ID STL13N65M2 650 V 0.475 6.5 A Extremely low gate charge Excellent output capacitance (COSS) profile 1 2 3 100% avalanche tested 4 Zener-protected PowerFLAT 5x6 HV Applications S

STL10N60M2 N-channel 600 V, 0.580 typ., 5.5 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features VDS @ Order code TJmax RDS(on) max ID STL10N60M2 650 V 0.660 5.5 A Extremely low gate charge 1 2 3 Lower RDS(on) x area vs previous generation 4 Low gate input resistance PowerFLAT 5x6 HV 100% aval

STF9HN65M2 N-channel 600 V, 0.71 typ., 5.5 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I DS DS(on) D STF9HN65M2 600 V 0.82 5.5 A Extremely low gate charge Excellent output capacitance (COSS) profile 3 100% avalanche tested 2 Zener-protected 1 Applications TO-220FP Switching appli

STP12N60M2 N-channel 600 V, 0.395 typ., 9 A MDmesh M2 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STP12N60M2 600 V 0.450 9 A 85 W Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected Applications Switching applications F

STW56N65DM2 N-channel 650 V, 0.058 typ., 48 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features R DS(on) Order code V I P DS D TOT max. STW56N65DM2 650 V 0.065 48 A 360 W Fast-recovery body diode 3 Extremely low gate charge and input 2 capacitance 1 Low on-resistance 100% avalanche tested TO-247 Extre

STP7N65M2, STU7N65M2 N-channel 650 V, 0.98 typ., 5 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packages Datasheet - production data Features TAB R DS(on) Order code VDS ID max STP7N65M2 650 V 1.15 5 A 3 2 STU7N65M2 650 V 1.15 5 A TAB 1 TO-220 Extremely low gate charge 3 2 Excellent output capacitance (Coss) profile IPAK 1 100% avalanche

STP26N60M2, STW26N60M2 N-channel 600 V, 0.14 typ., 20 A MDmesh M2 Power MOSFETs in TO-220 and TO-247 packages Datasheet - production data Features TAB V @ R DS DS(on) Order code I P D TOT T max. Jmax STP26N60M2 650 V 0.165 20 A 169 W STW26N60M2 3 3 2 2 1 Extremely low gate charge 1 Excellent output capacitance (C ) profile OSS 100% avala

STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2 N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in D PAK, DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB TAB RDS(on) 3 Order codes VDS @ TJmax max ID 1 3 1 DPAK STB10N60M2 D 2 PAK STD10N60M2 650 V 0.600 7.5 A STP10N60M2 TAB TAB STU10N60M2 3 Extremely low gate ch

BUH2M20AP HIGH VOLTAGE NPN SILICON POWER TRANSISTOR EXTRA HIGH VOLTAGE CAPABILITY LOW OUTPUT CAPACITANCE CHARACTERIZED FOR LINEAR MODE OPERATION. APPLICATIONS DESIGNED SPECIFICALLY FOR DYNAMIC FOCUS IN CTV AND MONITOR. 3 DESCRIPTION 2 1 The BUH2M20AP is manufactured using Multiepitaxial Mesa technology for cost-effective TO-220 high performance. INTERNAL SCHEMATIC D

STL16N60M2 N-channel 600 V, 0.290 typ., 8 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features Order code V @ T R max. I DS Jmax DS(on) D STL16N60M2 650 V 0.355 8 A Extremely low gate charge 1 Excellent output capacitance (COSS) profile 2 100% avalanche tested 3 4 Zener-protected Applications PowerFL

STL10N65M2 Datasheet N-channel 650 V, 0.85 typ., 4.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package Features VDS RDS(on ) max. ID Order code STL10N65M2 650 V 1.00 4.5 A 1 2 Extremely low gate charge 3 4 Excellent output capacitance (COSS) profile PowerFLAT 5x6 HV 100% avalanche tested Zener-protected D(5, 6, 7, 8) 8 7 6 5 Applications Switch

STD16N50M2, STF16N50M2, STP16N50M2 N-channel 500 V, 0.24 typ.,13 A, MDmesh M2 Power MOSFETs in DPAK, TO-220FP and TO-220 packages Datasheet - preliminary data Features TAB 3 Order codes VDS @ TJmax RDS(on) max. ID 1 DPAK STD16N50M2 STF16N50M2 550 V 0.28 13 A STP16N50M2 TAB Extremely low gate charge Excellent output capacitance (Coss) profile 3 3 2 2 10

STF6N65M2, STP6N65M2, STU6N65M2 N-channel 650 V, 1.2 typ., 4 A MDmesh M2 Power MOSFETs in TO-220FP, TO-220 and IPAK packages Datasheet - preliminary data Features TAB Order codes VDS RDS(on) max ID STF6N65M2 3 3 STP6N65M2 650 V 1.35 4 A 2 2 1 1 STU6N65M2 TO-220FP TO-220 TAB Extremely low gate charge Excellent output capacitance (COSS) profile 3 2 1

STI40N65M2, STP40N65M2 N-channel 650 V, 0.087 typ., 32 A MDmesh M2 Power MOSFET in I PAK and TO-220 packages Datasheet - production data Features TAB TAB Order code V R max. I DS DS(on) D STI40N65M2 650 V 0.099 32 A STP40N65M2 3 Extremely low gate charge 2 3 2 1 Excellent output capacitance (COSS) profile 1 I PAK TO-220 100% avalanche tested

STW25N60M2-EP Datasheet N-channel 600 V, 0.175 typ., 18 A MDmesh M2 EP Power MOSFET in a TO-247 package Features VDS @ TJmax RDS(on) max. ID Order code STW25N60M2-EP 650 V 0.188 18 A Extremely low gate charge 3 Excellent output capacitance (COSS) profile 2 1 Very low turn-off switching losses 100% avalanche tested TO-247 Zener-protected D(2, TAB)

STW50N65DM2AG Automotive-grade N-channel 650 V, 0.070 typ., 38 A Power MOSFET MDmesh DM2 in a TO-247 package Datasheet - production data Features R DS(on) Order code V I P DS D TOT max. STW50N65DM2AG 650 V 0.087 38 A 300 W AEC-Q101 qualified 3 Fast-recovery body diode 2 Extremely low gate charge and input 1 capacitance Low on-resistance

STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 N-channel 600 V, 0.108 typ., 26 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB VDS @ RDS(on) Order codes ID 3 2 3 TJmax max 1 2 1 2 I PAK TO-220FP STF33N60M2 26 A(1) TAB STI33N60M2 650 V 0.125 STP33N60M2 26 A STW33N60M2 3 3 2 2 1

STD12N60DM2AG Datasheet Automotive-grade N-channel 600 V, 380 m typ., 10 A MDmesh DM2 Power MOSFET in a DPAK package Features VDS @ TJmax RDS(on ) max. ID Order code TAB STD12N60DM2AG 650 V 430 m 10 A 3 2 1 DPAK AEC-Q101 qualified Fast-recovery body diode Extremely low gate charge and input capacitance D(2, TAB) Low on-resistance 100% avalanche test

STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2 N-channel 600 V, 0.135 typ., 22 A MDmesh M2 Power MOSFETs in D PAK, I PAK, TO-220 and TO-247 Datasheet - production data Features Order code V @ T R max. I DS Jmax DS(on) D STB28N60M2 STI28N60M2 650 V 0.150 22 A STP28N60M2 STW28N60M2 Extremely low gate charge Excellent output capacitance (C ) profile

STW56N65M2 N-channel 650 V, 0.049 typ., 49 A MDmesh M2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDS RDS(on) max ID STW56N65M2 650 V 0.062 49 A Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested 3 2 Zener-protected 1 Applications TO-247 Switching applications Figure

STW35N60DM2 N-channel 600 V, 0.094 typ., 28 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features R DS(on) Order code VDS ID PTOT max. STW35N60DM2 600 V 0.110 28 A 210 W Fast-recovery body diode 3 Extremely low gate charge and input 2 capacitance 1 Low on-resistance 100% avalanche tested TO-247 Extremely

STD22NM20N N-CHANNEL 200V - 0.088 - 22A DPAK ULTRA LOW GATE CHARGE MDmesh II MOSFET Table 1 General Features Figure 1 Package TYPE VDSS RDS(on) ID STD22NM20N 200 V

STF6N60M2, STP6N60M2, STU6N60M2 N-channel 600 V, 1.06 typ., 4.5 A MDmesh II Plus low Qg Power MOSFET in TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB VDS @ RDS(on) 3 2 Order codes ID 1 TJmax max IPAK 3 STF6N60M2 2 1 STP6N60M2 650 V 1.2 4.5 A TO-220FP TAB STU6N60M2 Extremely low gate charge 3 Lower RDS(on) x area vs previous

STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2 N-channel 650 V, 0.15 typ., 20 A MDmesh M2 Power MOSFETs in D PAK, TO-220FP, TO-220 and TO-247 packages Datasheet - preliminary data Features TAB Order codes VDS RDS(on) max ID STB28N65M2 3 3 STF28N65M2 1 2 650 V 0.18 20 A 1 STP28N65M2 D2PAK TO-220FP STW28N65M2 TAB Extremely low gate charge Excellent output

STFI12N60M2 N-channel 600 V, 0.395 typ., 9 A MDmesh M2 Power MOSFET in an I PAKFP package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STFI12N60M2 600 V 0.450 9 A 25 W Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected Applications Switching application

STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB TAB Order codes VDS @ TJmax RDS(on) max ID 2 3 1 STB24N60M2 3 2 1 D2PAK STI24N60M2 I2PAK 650 V 0.19 18 A STP24N60M2 TAB STW24N60M2 Extremely low gate charge

STW63N65DM2 N-channel 650 V, 0.042 typ., 60 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features R DS(on) Order code V I P DS D TOT max. STW63N65DM2 650 V 0.05 60 A 446 W Fast-recovery body diode 3 Extremely low gate charge and input 2 capacitance 1 Low on-resistance 100% avalanche tested TO-247 Extreme

STFU9N65M2 Datasheet N-channel 650 V, 0.79 typ., 5 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Features VDS RDS(on) max. ID Order code STFU9N65M2 650 V 0.90 5 A Extremely low gate charge 3 Excellent output capacitance (COSS) profile 2 1 100% avalanche tested TO-220FP Zener-protected ultra narrow leads D(2) Applications Switching

STW35N65DM2 Datasheet N-channel 650 V, 93 m typ., 32 A MDmesh DM2 Power MOSFET in a TO-247 package Features VDS RDS(on) max. ID Order code STW35N65DM2 650 V 110 m 32 A Fast-recovery body diode 3 Extremely low gate charge and input capacitance 2 1 Low on-resistance 100% avalanche tested TO-247 Extremely high dv/dt ruggedness Zener-protected D(2, TAB

STW56N60M2-4 N-channel 600 V, 0.045 typ., 52 A MDmesh M2 Power MOSFET in a TO247-4 package Datasheet - production data Features Order code V Jmax DS(on) D DS @ T R max I STW56N60M2-4 650 V 0.055 52 A Excellent switching performance thanks to the extra driving source pin Extremely low gate charge Excellent output capacitance (C ) profile oss 100%

STF7N60M2 N-channel 600 V, 0.86 typ., 5 A MDmesh II Plus low Qg Power MOSFET in TO-220FP package Datasheet - production data Features VDS @ RDS(on) Order code ID TJmax max STF7N60M2 650 V 0.95 5 A Extremely low gate charge 3 2 Lower RDS(on) x area vs previous generation 1 Low gate input resistance TO-220FP 100% avalanche tested Zener-protected App

STW56N60M2 N-channel 600 V, 0.045 typ., 52 A MDmesh M2 Power MOSFET in a TO-247 package Datasheet - production data Features RDS(on) Order code VDS @ TJmax max ID STW56N60M2 650 V 0.055 52 A Extremely low gate charge Excellent output capacitance (Coss) profile 3 2 100% avalanche tested 1 Zener-protected TO-247 Applications Switching application

STP18N60DM2 N-channel 600 V, 0.260 typ., 12 A MDmesh DM2 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I DS DS(on) D STP18N60DM2 600 V 0.295 12 A Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Ze

STFH18N60M2 Datasheet N-channel 600 V, 0.255 typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP wide creepage package Features VDS @TJmax RDS(on) max. ID Order code STFH18N60M2 650 V 0.280 13 A Extremely low gate charge Excellent output capacitance (COSS) profile TO-220 FP wide creepage 100% avalanche tested D(2) Zener-protected Wide distance of 4.25 mm bet

STW70N60DM2 N-channel 600 V, 0.037 typ., 66 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STW70N60DM2 600 V 0.042 66 A 446 W Fast-recovery body diode Extremely low gate charge and input 3 capacitance 2 Low on-resistance 1 100% avalanche tested Extremely high dv/d

STD13N65M2 N-channel 650 V, 0.37 typ., 10 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on) max ID TAB STD13N65M2 650 V 0.43 10 A Extremely low gate charge 3 2 Excellent output capacitance (Coss) profile 1 100% avalanche tested Zener-protected DPAK Applications Switching applications Figure 1. I

STW70N60M2 N-channel 600 V, 0.03 typ., 68 A MDmesh M2 Power MOSFET in a TO-247 package Datasheet - production data Features Order codes VDS @ TJmax RDS(on) max ID STW70N60M2 650 V 0.040 68 A Extremely low gate charge 3 2 1 Excellent output capacitance (Coss) profile 100% avalanche tested TO-247 Zener-protected Applications Figure 1. Internal schematic

STB24N65M2, STF24N65M2, STP24N65M2 N-channel 650 V, 0.185 typ., 16 A MDmesh M2 Power MOSFET in D2PAK, TO-220FP and TO-220 packages Datasheet - production data Features Order codes V R max I DS DS(on) D STB24N65M2 STF24N65M2 650 V 0.23 16 A STP24N65M2 Extremely low gate charge Excellent output capacitance (C ) profile oss 100% avalanche tested Ze

STD12N65M2 N-channel 650 V, 0.42 typ., 8 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) D STD12N65M2 650 V 0.5 8 A Extremely low gate charge Excellent output capacitance (COSS) profile DPAK (TO-252) 100% avalanche tested Zener-protected Figure 1 Internal schematic diagram Applicatio

STF24N60M2, STFI24N60M2, STFW24N60M2 N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packages Datasheet - production data Features Order codes VDS @ TJmax RDS(on) max ID STF24N60M2 3 2 1 1 STFI24N60M2 650 V 0.19 18 A 2 3 TO-220FP STFW24N60M2 I2PAKFP (TO-281) Extremely low gate charge Lower RDS(on) x area

STW45N60DM2AG Automotive-grade N-channel 600 V, 0.085 typ., 34 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features V @ R DS DS(on) Order code I P D TOT TJmax. max. 34 250 STW45N60DM2AG 650 V 0.093 A W 3 Designed for automotive applications and 2 AEC-Q101 qualified 1 Fast-recovery body diode Extremely low gate c

STL13N60M2 N-channel 600 V, 0.39 typ., 7 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID STL13N60M2 650 V 0.42 7 A Extremely low gate charge Lower RDS(on) x area vs previous generation 1 2 3 Low gate input resistance 4 100% avalanche tested PowerFLAT 5x6

STW48N60M2-4 N-channel 600 V, 0.06 typ., 42 A MDmesh M2 Power MOSFET in a TO247-4 package Datasheet - production data Features Order code V Jmax DS(on) D DS @ T R max I STW48N60M2-4 650 V 0.07 42 A Excellent switching performance thanks to the extra driving source pin Extremely low gate charge Excellent output capacitance (C ) profile oss 100% a

STB18N60M2, STP18N60M2, STW18N60M2 N-channel 600 V, 0.255 typ., 13 A MDmesh II Plus low Qg Power MOSFET in D2PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB VDS @ RDS(on) 3 Order codes ID 1 TJmax max 2 D PAK STB18N60M2 STP18N60M2 650 V 0.28 13 A TAB STW18N60M2 Extremely low gate charge 3 3 Lower RDS(on) x area vs previous generation

STW65N65DM2AG Automotive-grade N-channel 650 V, 0.042 typ., 60 A Power MOSFET MDmesh DM2 in a TO-247 package Datasheet - production data Features R DS(on) Order code V I P DS D TOT max. STW65N65DM2AG 650 V 0.05 60 A 446 W Designed for automotive applications and 3 AEC-Q101 qualified 2 Fast-recovery body diode 1 Extremely low gate charge and inpu

STB13N60M2, STD13N60M2 N-channel 600 V, 0.35 typ., 11 A MDmesh II Plus low Qg Power MOSFETs in D2PAK and DPAK packages Datasheet - production data Features Order codes VDS @ TJmax RDS(on) max ID STB13N60M2 TAB 650 V 0.38 11 A STD13N60M2 TAB 3 3 Extremely low gate charge 1 1 Lower RDS(on) x area vs previous generation DPAK D2PAK Low gate input resistance

STF28N60DM2 N-channel 600 V, 0.13 typ., 21 A MDmesh DM2 Power MOSFET in a TO-220FP package Datasheet - production data Features V @ R DS DS(on) Order code I P D TOT T max. Jmax. STF28N60DM2 650 V 0.16 21 A 30 W Fast-recovery body diode Extremely low gate charge and input 3 2 capacitance 1 Low on-resistance 100% avalanche tested TO-220F

STD16N60M2 N-channel 600 V, 0.280 typ., 12 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) D STD16N60M2 600 V 0.320 12 A Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected Figure 1 Internal schematic diagram Applications D(

STW48N60M2 N-channel 600 V, 0.06 typ., 42 A MDmesh M2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V Jmax DS(on) D DS @ T R max I STW48N60M2 650 V 0.07 42 A Extremely low gate charge Excellent output capacitance (C ) profile OSS 3 2 100% avalanche tested 1 Zener-protected TO-247 Applications Switchin

STD11N65M2, STP11N65M2, STU11N65M2 N-channel 650 V, 0.6 typ., 7 A MDmesh II Plus low Qg Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - preliminary data Features TAB TAB 3 Order codes VDS RDS(on) max ID 1 STD11N65M2 DPAK 3 STP11N65M2 650 V 0.67 7 A 2 1 STU11N65M2 TO-220 TAB Extremely low gate charge Lower RDS(on) x area vs previous generation

AM2931-110 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .3 1 VSWR CAPABILITY .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .400 x .500 2L SFL (S138) .METAL/CERAMIC HERMETIC PACKAGE hermetically sealed .P 105 W MIN. WITH 6.2 dB GAIN OUT = ORDER CODE BRANDING AM2931-110 2931-110 DESCRIPTION PIN CONN

STW37N60DM2AG Automotive-grade N-channel 600 V, 0.094 typ., 28 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STW37N60DM2AG 600 V 0.110 28 A 210 W Designed for automotive applications and AEC-Q101 qualified 3 Fast-recovery body diode 2 Extremely low gate charge and input 1 capac

STL9N60M2 N-channel 600 V, 0.76 typ., 4.8 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID STL9N60M2 650 V 0.86 4.8 A Extremely low gate charge Lower RDS(on) x area vs previous generation 1 2 3 Low gate input resistance 4 100% avalanche tested PowerFLAT 5x

STL12N65M2 N-channel 650 V, 0.62 typ., 5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STL12N65M2 650 V 0.75 5 A 48 W 1 Extremely low gate charge 2 3 Excellent output capacitance (COSS) profile 4 100% avalanche tested Zener-protected PowerFLAT 5x6 HV Ap

STD5N60M2, STP5N60M2, STU5N60M2 N-channel 600 V, 1.26 typ., 3.5 A MDmesh II Plus low Qg Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB Order codes VDS @ TJmax RDS(on) max ID 3 STD5N60M2 1 STP5N60M2 650 V 1.4 3.5 A DPAK STU5N60M2 TAB Extremely low gate charge TAB Lower RDS(on) x area vs previous generation 3 3 Lo

STP16N60M2, STU16N60M2 N-channel 600 V, 0.28 typ., 12 A MDmesh M2 Power MOSFET in TO-220 and IPAK packages Datasheet - production data Features TAB Order code V R max. I DS DS(on) D STP16N60M2 600 V 0.32 12 A STU16N60M2 3 2 TAB 1 TO-220 Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested 3 2 IPAK

STD16N65M2 N-channel 650 V, 0.32 typ., 11 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID TAB STD16N65M2 710 V 0.36 11 A Extremely low gate charge 3 2 Excellent output capacitance (Coss) profile 1 100% avalanche tested Zener-protected DPAK Applications Switching applications Fig

AM2729-110 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .3 1 VSWR CAPABILITY .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .400 x .500 2L SFL (S138) hermetically sealed .P 105 W MIN. WITH 6.5 dB GAIN OUT = ORDER CODE BRANDING AM2729-110 2729-110 DESCRIPTION PIN CONNE

STP43N60DM2 N-channel 600 V, 0.085 typ., 34 A MDmesh DM2 Power MOSFET in a TO-220 package Datasheet - production data Features V @ R DS DS(on) Order code I P D TOT TJmax. max. STP43N60DM2 650 V 0.093 34 A 250 W Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high

STFU18N65M2 N-channel 650 V, 0.275 typ., 12 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code V R max I DS DS(on) D STFU18N65M2 650 V 0.33 12 A Extremely low gate charge Excellent output capacitance (C ) profile oss 100% avalanche tested 3 2 1 Zener-protected TO-220FP Application

STD9N60M2, STP9N60M2, STU9N60M2 N-channel 600 V, 0.72 typ., 5.5 A MDmesh II Plus low Qg Power MOSFET in DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB VDS @ RDS(on) Order codes ID 3 TJmax max 1 DPAK STD9N60M2 STP9N60M2 650 V 0.78 5.5 A TAB STU9N60M2 TAB Extremely low gate charge 3 3 Lower RDS(on) x area vs previous generation 2 2

STF18N65M2 N-channel 650 V, 0.275 typ., 12 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet - production data Features RDS(on) Order code VDS ID max STF18N65M2 650 V 0.33 12 A Extremely low gate charge 3 2 Excellent output capacitance (Coss) profile 1 100% avalanche tested TO-220FP Zener-protected Applications Switching applications F

STF12N50M2 N-channel 500 V, 0.325 typ.,10 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP package Datasheet - preliminary data Features Order code VDS RDS(on) max ID STF12N50M2 500 V 0.38 10 A Extremely low gate charge Lower RDS(on) x area vs previous generation 3 2 Low gate input resistance 1 100% avalanche tested TO-220FP Zener-protected Appli

STF40N65M2 N-channel 650 V, 0.087 typ., 32 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I DS DS(on) D STF40N65M2 650 V 0.099 32 A Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested 3 2 Zener-protected 1 Applications TO-220FP Switching appl

ESM2012DV NPN DARLINGTON POWER MODULE HIGH CURRENT POWER BIPOLAR MODULE VERY LOW R JUNCTION TO CASE th SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE (2500V RMS) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS MOTOR CONTROL UPS DC/DC & DC/AC CONVERTERS ISOTOP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS

AM2729-125 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .P 125 W MIN. WITH 7.0 dB GAIN OUT = .400 x .500 2LFL (S038) hermetically sealed BRANDING ORDER CODE 2729-125 AM2729-125 DESCRIPTION The AM2729-125 device is a hig

STB40N60M2, STP40N60M2, STW40N60M2 N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB TAB Order codes VDS @ TJmax RDS(on) max ID 2 STB40N60M2 3 1 3 2 STP40N60M2 650 V 0.088 34 A D2PAK 1 STW40N60M2 TO-220 Extremely low gate charge Lower RDS(on) x area vs previous

STF7N65M2 N-channel 650 V, 0.98 typ., 5 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet - preliminary data Features RDS(on) Order code VDS max ID STF7N65M2 650 V 1.15 5 A Extremely low gate charge 3 2 Excellent output capacitance (Coss) profile 1 100% avalanche tested TO-220FP Zener-protected Applications Switching applications Figure 1

STD22NM20N N-CHANNEL 200V - 0.088 - 22A DPAK ULTRA LOW GATE CHARGE MDmesh II MOSFET Table 1 General Features Figure 1 Package TYPE VDSS RDS(on) ID STD22NM20N 200 V

STF9N60M2, STFI9N60M2 N-channel 600 V, 0.72 typ., 5.5 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP and I2PAKFP packages Datasheet - production data Features VDS @ RDS(on) Order codes ID TJmax max STF9N60M2 650 V 0.78 5.5 A STFI9N60M2 Extremely low gate charge 3 2 1 2 1 3 Lower RDS(on) x area vs previous generation TO-220FP I2PAKFP (TO-281) Low

STF15N60M2-EP, STFI15N60M2-EP N-channel 600 V, 0.340 typ., 11 A MDmesh M2 EP Power MOSFET in TO-220FP and I PAKFP packages Datasheet - production data Extremely low gate charge Excellent output capacitance (COSS) profile Very low turn-off switching losses 100% avalanche tested Zener-protected Applications TO-220FP I2PAKFP (TO-281) Switching

STF12N60M2 N-channel 600 V, 0.395 typ., 9 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STF12N60M2 600 V 0.450 9 A 25 W Extremely low gate charge Excellent output capacitance (COSS) profile 3 100% avalanche tested 2 Zener-protected 1 Applications TO-220FP Switch

STF5N60M2 N-channel 600 V, 1.26 typ., 3.7 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP package Datasheet - preliminary data Features VDS @ RDS(on) Order code ID TJmax max STF5N60M2 650 V 1.4 3.7 A Extremely low gate charge 3 Lower RDS(on) x area vs previous generation 2 1 Low gate input resistance TO-220FP 100% avalanche tested Zener-protec

STF8N60DM2 N-channel 600 V, 550 m typ., 8 A MDmesh DM2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STF8N60DM2 600 V 600 m 8 A 25 W Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness

STP13N60M2, STU13N60M2, STW13N60M2 N-channel 600 V, 0.35 typ., 11 A MDmesh II Plus low Qg Power MOSFETs in TO-220, IPAK and TO-247 packages Datasheet - production data Features TAB TAB Order codes VDS @ TJmax RDS(on) max ID 3 2 1 STP13N60M2 3 2 1 IPAK STU13N60M2 650 V 0.38 11 A TO-220 STW13N60M2 Extremely low gate charge Lower RDS(on) x area vs previous g

STI18N65M2, STP18N65M2 N-channel 650 V, 0.275 typ., 12 A MDmesh M2 Power MOSFET in I PAK and TO-220 packages Datasheet - production data Features Order code VDS RDS(on) max ID TAB TAB STI18N65M2 650V 0.33 12 A STP18N65M2 3 3 2 2 1 1 Extremely low gate charge I2PAK TO-220 Excellent output capacitance (Coss) profile 100% avalanche tested Zener-prote

STB28N60M2, STP28N60M2, STW28N60M2 N-channel 600 V, 0.135 typ., 22 A MDmesh M2 Power MOSFETs in D2PAK, TO-220 and TO-247 packages Datasheet - production data TAB Features TAB VDS @ RDS(on) Order code ID 3 TJmax max 1 3 2 1 STB28N60M2 D2PAK TO-220 STP28N60M2 650 V 0.150 22 A STW28N60M2 Extremely low gate charge 3 Excellent output capacitance (Coss) prof

STF18N60M2 N-channel 600 V, 0.255 typ., 13 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID STF18N60M2 650 V 0.28 13 A Extremely low gate charge Lower RDS(on) x area vs previous generation 3 2 1 Low gate input resistance TO-220FP 100% avalanche tested Zener-protected

STB6N65M2, STD6N65M2 N-channel 650 V, 1.2 typ., 4 A MDmesh M2 Power MOSFETs in D2PAK and DPAK packages Datasheet - preliminary data Features Order codes VDS RDS(on) max ID STB6N65M2 650 V 1.35 4 A TAB TAB STD6N65M2 3 1 3 Extremely low gate charge 1 DPAK 2 D PAK Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected App

STW70N65M2 N-channel 650 V, 0.039 typ., 63 A MDmesh M2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V R max. I DS DS(on) D STW70N65M2 650 V 0.046 63 A Extremely low gate charge Excellent output capacitance (COSS) profile 3 100% avalanche tested 2 Zener-protected 1 Applications TO-247 Switching applicat

STF10N60M2, STFI10N60M2 N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP and I PAKFP packages Datasheet - production data Features RDS(on) Order codes VDS @ TJmax max ID STF10N60M2 650 V 0.6 7.5 A STFI10N60M2 Extremely low gate charge 3 Lower RDS(on) x area vs previous generation 1 2 2 1 3 Low gate input resistance 2 T

STWA48N60DM2 N-channel 600 V, 0.065 typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 long leads package Datasheet - production data Features Order code V R max. I DS DS(on) D STWA48N60DM2 600 V 0.079 40 A Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt rugged

STF11N65M2(045Y) Datasheet N-channel 650 V, 0.60 typ., 7 A MDmesh M2 Power MOSFET in a TO-220FP narrow leads package Features VDS RDS(on) max. ID PTOT Order code STF11N65M2(045Y) 650 V 0.68 7 A 25 W Extremely low gate charge 3 2 1 Excellent output capacitance (COSS) profile TO-220FP narrow leads 100% avalanche tested Zener-protected D(2) Applications

STB6N60M2, STD6N60M2 N-channel 600 V, 1.06 typ., 4.5 A MDmesh II Plus low Qg Power MOSFET in D2PAK and DPAK packages Datasheet - production data Features VDS @ RDS(on) Order codes ID TJmax max TAB TAB STB6N60M2 650 V 1.2 4.5 A 3 STD6N60M2 1 3 1 DPAK 2 Extremely low gate charge D PAK Lower RDS(on) x area vs previous generation Low gate input resistanc

STL7N60M2 N-channel 600 V, 0.92 typ., 5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x5 package Datasheet - production data Features Order code V @ Tjmax R max I DS DS(on) D STL7N60M2 650 V 1.05 5 A 6 7 5 Extremely low gate charge 4 Excellent output capacitance (COSS) profile 100% avalanche tested 1 12 Zener-protected PowerFLAT 5x5 Applic

STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2 N-channel 650 V, 0.117 typ., 24 A MDmesh M2 Power MOSFETs in D PAK, TO-220FP, TO-220 and I PAK packages Datasheet - production data Features TAB TAB RDS(on) Order codes VDS max ID STB33N65M2 3 3 1 2 1 STF33N65M2 TO-220FP D2PAK 650 V 0.14 24 A STP33N65M2 TAB TAB STI33N65M2 Extremely low gate charge Exce

STP12N50M2 N-channel 500 V, 0.325 typ.,10 A MDmesh II Plus low Qg Power MOSFET in a TO-220 package Datasheet - preliminary data Features Order code VDS RDS(on) max ID TAB STP12N50M2 500 V 0.38 10 A Extremely low gate charge Lower RDS(on) x area vs previous generation 3 Low gate input resistance 2 1 100% avalanche tested TO-220 Zener-protected Appl

STW40N65M2 N-channel 650 V, 0.087 typ., 32 A MDmesh M2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V R max. I DS DS(on) D STW40N65M2 650 V 0.099 32 A Extremely low gate charge Excellent output capacitance (COSS) profile 3 100% avalanche tested 2 Zener-protected 1 Applications TO-247 Switching applicat

STF13N60M2, STFI13N60M2 N-channel 600 V, 0.35 typ., 11 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP and I2PAKFP packages Datasheet - production data Features Order codes VDS @ TJmax RDS(on) max ID STF13N60M2 650 V 0.38 11 A STFI13N60M2 3 2 Extremely low gate charge 1 1 2 3 TO-220FP Lower RDS(on) x area vs previous generation I2PAKFP Low gate input r

STU12N60M2 N-channel 600 V, 0.395 typ., 9 A MDmesh M2 Power MOSFET in an IPAK package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT TAB STU12N60M2 600 V 0.450 9 A 85 W Extremely low gate charge 3 2 Excellent output capacitance (COSS) profile 1 100% avalanche tested Zener-protected IPAK Applications Switchi

STF11N60M2-EP Datasheet N-channel 600 V, 0.550 typ., 7.5 A MDmesh M2 EP Power MOSFET in a TO-220FP package Features VDS RDS(on) max. ID Order code STF11N60M2-EP 600 V 0.595 7.5 A Extremely low gate charge Excellent output capacitance (COSS) profile 3 2 1 Very low turn-off switching losses 100% avalanche tested TO-220FP Zener-protected D(2) Applica

STL18N65M2 N-channel 650 V, 0.290 typ., 8 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - preliminary data Features VDS @ Order codes TJmax RDS(on) max ID STL18N65M2 715 V 0.365 8 A Extremely low gate charge 1 2 3 Excellent output capacitance (Coss) profile 4 100% avalanche tested PowerFLAT 5x6 HV Zener-protected Applicatio

STB33N60M2 N-channel 600 V, 0.108 typ., 26 A MDmesh II Plus low Qg Power MOSFETs in a D2PAK package Datasheet - production data Features VDS @ RDS(on) TAB Order code ID TJmax max STB33N60M2 650 V 0.125 26 A 3 Extremely low gate charge 1 Lower RDS(on) x area vs previous generation D 2PAK MDmesh II technology Low gate input resistance 100% avalan

STB28N60DM2, STP28N60DM2, STW28N60DM2 N-channel 600 V, 0.13 typ., 21 A MDmesh DM2 Power MOSFETs in D PAK, TO-220 and TO-247 packages Datasheet - production data Features V @ R DS DS(on) Order code I P D TOT T max. Jmax. STB28N60DM2 STP28N60DM2 600 V 0.16 21 A 170 W STW28N60DM2 Fast-recovery body diode Extremely low gate charge and input capacita

STW43N60DM2 N-channel 600 V, 0.085 typ., 34 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features V @ DS R DS(on) Order code I P D TOT max. TJmax. STW43N60DM2 650 V 0.093 34 A 250 W Fast-recovery body diode 3 Extremely low gate charge and input 2 capacitance 1 Low on-resistance 100% avalanche tested TO-2

STD8N60DM2 Datasheet N-channel 600 V, 550 m typ., 8 A, MDmesh DM2 Power MOSFET in a DPAK package Features VDS RDS(on) max. ID PTOT Order code TAB STD8N60DM2 600 V 600 m 8 A 85 W 3 2 1 Fast-recovery body diode DPAK Extremely low gate charge and input capacitance Low on-resistance D(2, TAB) 100% avalanche tested Extremely high dv/dt ruggedness Ze

STF40N60M2, STFI40N60M2, STFW40N60M2 N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packages Datasheet - production data Features Order codes VDS @ TJmax RDS(on) max ID STF40N60M2 STFI40N60M2 650 V 0.088 34 A 3 2 1 STFW40N60M2 1 2 3 TO-220FP I2PAKFP (TO-281) Extremely low gate charge Lower RDS(on) x area

STD12N50M2 N-channel 500 V, 0.325 typ.,10 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on) max ID STD12N50M2 500 V 0.38 10 A TAB Extremely low gate charge 3 Excellent output capacitance (COSS) profile 1 100% avalanche tested DPAK Zener-protected Applications Switching applications Figure 1. Int

STU6N60DM2 Datasheet N-channel 600 V, 0.95 typ., 5 A MDmesh DM2 Power MOSFET in an IPAK package Features VDS RDS(on) max. ID PTOT TAB Order code STU6N60DM2 600 V 1.10 5 A 60 W 3 2 Fast-recovery body diode 1 Extremely low gate charge and input capacitance Low on-resistance IPAK 100% avalanche tested Extremely high dv/dt ruggedness D(2, TAB) Zen

STP26N65DM2 Datasheet N-channel 650 V, 0.156 typ., 20 A, MDmesh DM2 Power MOSFET in a TO-220 package Features VDS RDS(on) max. ID PTOT Order code TAB STP26N65DM2 650 V 0.190 20 A 170 W Fast-recovery body diode 3 2 Extremely low gate charge and input capacitance 1 Low on-resistance TO-220 100% avalanche tested Extremely high dv/dt ruggedness D(2, T

STW56N65M2-4 N-channel 650 V, 0.049 typ., 49 A MDmesh M2 Power MOSFET in a TO247-4 package Datasheet - production data Features Order code VDS RDS(on) max ID STW56N65M2-4 650 V 0.062 49 A Excellent switching performance thanks to the extra driving source pin Extremely low gate charge 4 Excellent output capacitance (Coss) profile 3 2 100% avalanche tes

STF16N65M2 N-channel 650 V, 0.32 typ., 11 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID STF16N65M2 710 V 0.36 11 A Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested Zener-protected Applications TO-220FP Switching applications Figure 1.

STF13N60DM2 Datasheet N-channel 600 V, 0.310 typ., 11 A MDmesh DM2 Power MOSFET in a TO-220FP package VDS RDS(on) max. ID Order codes STF13N60DM2 600 V 0.365 11 A Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 3 2 1 100% avalanche tested Extremely high dv/dt ruggedness TO-220FP Zener-protected D(2) A

STWA48N60M2 N-channel 600 V, 0.06 typ., 42 A MDmesh M2 Power MOSFET in a TO-247 long leads package Datasheet - production data Features Order code V DS @ TJmax. RDS(on) max. ID STWA48N60M2 650 V 0.07 42 A Extremely low gate charge Excellent output capacitance (C ) profile OSS 100% avalanche tested Zener-protected Applications Switching app

STD11N50M2, STF11N50M2 N-channel 500 V, 0.45 typ,8 A, MDmesh II Plus low Qg Power MOSFETs in DPAK and TO-220FP packages Datasheet - preliminary data Features Order codes VDS @ TJmax RDS(on) max ID STD11N50M2 550 V 0.53 8 A STF11N50M2 TAB Extremely low gate charge 3 1 Lower RDS(on) x area vs previous generation 3 DPAK 2 Low gate input resistance 1

STF16N60M2 N-channel 600 V, 0.28 typ., 12 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I DS DS(on) D STF16N60M2 600 V 0.32 12 A Extremely low gate charge Excellent output capacitance (COSS) profile 3 100% avalanche tested 2 Zener-protected 1 Applications TO-220FP Switching applica

STD13N60DM2 Datasheet N-channel 600 V, 0.310 typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package VDS RDS(on) max. ID Order codes TAB STD13N60DM2 600 V 0.365 11 A Fast-recovery body diode 3 2 1 Extremely low gate charge and input capacitance DPAK Low on-resistance 100% avalanche tested D(2, TAB) Extremely high dv/dt ruggedness Zener-protected

STP13N65M2, STU13N65M2 N-channel 650 V, 0.37 typ.,10 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packages Datasheet - production data Features RDS(on) Order code VDS ID max TAB STP13N65M2 TAB 650 V 0.43 10A STU13N65M2 3 2 1 3 2 Extremely low gate charge 1 TO-220 Excellent output capacitance (Coss) profile IPAK 100% avalanche tested Zener-pr

STL12N60M2 N-channel 600 V, 0.400 typ., 6.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STL12N60M2 600 V 0.495 6.5 A 52 W 1 Extremely low gate charge 2 3 Excellent output capacitance (COSS) profile 4 100% avalanche tested Zener-protected PowerFLAT 5x6 HV

STD9N40M2 N-channel 400 V, 0.59 typ., 6 A MDmesh II Plus low Qg Power MOSFET in a DPAK package Datasheet - preliminary data Features Order code VDS @ TJmax RDS(on) max ID STD9N40M2 450 V 0.8 6 A TAB Extremely low gate charge 3 Lower RDS(on) x area vs previous generation 1 Low gate input resistance DPAK 100% avalanche tested Zener-protected Applica

STP13N60DM2 Datasheet N-channel 600 V, 0.310 typ., 11 A MDmesh DM2 Power MOSFET in a TO-220 package Features VDS RDS(on ) max. ID Order code TAB STP13N60DM2 600 V 0.365 11 A Fast-recovery body diode 3 2 Extremely low gate charge and input capacitance 1 Low on-resistance TO-220 100% avalanche tested Extremely high dv/dt ruggedness D(2, TAB) Ze

STF28N60M2, STFI28N60M2 N-channel 600 V, 0.135 typ., 22 A MDmesh M2 Power MOSFETs in TO-220FP and I2PAKFP packages Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID STF28N60M2 650 V 0.150 22 A STFI28N60M2 3 Extremely low gate charge 2 1 Excellent output capacitance (Coss) profile TO-220FP 1 2 3 100% avalanche tested 2 I PAKFP

STF24N60DM2 N-channel 600 V, 0.175 typ., 18 A MDmesh DM2 Power MOSFET in a TO-220FP package Datasheet - production data Features VDS @ RDS(on) Order code ID TJmax max STF24N60DM2 650 V 0.20 18 A Fast-recovery body diode Extremely low gate charge and input 3 2 1 capacitance TO-220FP Low on-resistance 100% avalanche tested Extremely high dv/dt rugg

STD15N50M2AG Automotive-grade N-channel 500 V, 0.336 typ., 10 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features R DS(on) Order code V I P DS D TOT max. STD15N50M2AG 500 V 0.380 10 A 85 W Designed for automotive applications and AEC-Q101 qualified Extremely low gate charge Excellent output capacitance (C ) profile OSS

STW48N60DM2 N-channel 600 V, 0.065 typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V R max. I DS DS(on) D STW48N60DM2 600 V 0.079 40 A Fast-recovery body diode Extremely low gate charge and input 3 capacitance 2 Low on-resistance 1 100% avalanche tested Extremely high dv/dt ruggedness

STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2 N-channel 650 V, 0.79 typ., 5 A MDmesh M2 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB RDS(on) Order codes VDS max ID 3 1 DPAK STD9N65M2 3 2 1 STF9N65M2 650 V 0.9 5 A STP9N65M2 TO-220FP TAB STU9N65M2 TAB Extremely low gate charge 3 2 Excellent output capacit

STD11N50M2, STF11N50M2 Datasheet N-channel 500 V, 0.45 typ., 8 A MDmesh M2 Power MOSFETs in DPAK and TO-220FP packages Features VDS @ TJmax RDS(on)max. ID Order code Package TAB STD11N50M2 DPAK 3 550 V 0.53 8 A 2 STF11N50M2 TO-220FP 1 3 2 1 Extremely low gate charge DPAK TO-220FP Excellent output capacitance (COSS) profile 100% avalanche tested Zen

STF9N60M2, STFI9N60M2 N-channel 600 V, 0.72 typ., 5.5 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP and I2PAKFP packages Datasheet - production data Features VDS @ RDS(on) Order codes ID TJmax max STF9N60M2 650 V 0.78 5.5 A STFI9N60M2 Extremely low gate charge 3 2 1 2 1 3 Lower RDS(on) x area vs previous generation TO-220FP I2PAKFP (TO-281) Low

STD13N50DM2AG Datasheet Automotive-grade N-channel 500 V, 320 m typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package Features VDS RDS(on ) max. ID Order code TAB STD13N50DM2AG 500 V 360 m 11 A 3 2 1 DPAK AEC-Q101 qualified Fast-recovery body diode Extremely low gate charge and input capacitance D(2, TAB) Low on-resistance 100% avalanche tested E

STFU16N65M2 N-channel 650 V, 0.32 typ., 11 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code V R max I DS DS(on) D STFU16N65M2 650 V 0.36 11 A Extremely low gate charge Excellent output capacitance (C ) profile OSS 100% avalanche tested 3 2 1 Zener-protected TO-220FP Applications

STL18N60M2 N-channel 600 V, 0.278 typ., 9 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features VDS @ Order code TJmax RDS(on) max ID STL18N60M2 650 V 0.308 9 A Extremely low gate charge 1 2 3 Lower RDS(on) x area vs previous generation 4 Low gate input resistance PowerFLAT 5x6 HV 100% avalanche

STL20NM20N N-CHANNEL 200V - 0.088 - 20A PowerFLAT ULTRA LOW GATE CHARGE MDmesh II MOSFET Table 1 General Features Figure 1 Package TYPE VDSS RDS(on) ID STL20NM20N 200 V

STB24N60DM2, STP24N60DM2, STW24N60DM2 N-channel 600 V, 0.175 typ., 18 A FDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB TAB VDS @ RDS(on) 2 Order codes ID 3 TJmax max 1 3 STB24N60DM2 D2PAK 2 1 STP24N60DM2 650 V 0.20 18 A TO-220 STW24N60DM2 Extremely low gate charge and input capacitance 3 2

STF12N65M2 N-channel 650 V, 0.42 typ., 8 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS RDS(on) max ID STF12N65M2 650 V 0.5 8 A Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested 3 2 Zener-protected 1 Applications TO-220FP Switching applications Figure

STF11N65M2, STFI11N65M2 N-channel 650 V, 0.6 typ., 7 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP and I2PAKFP packages Datasheet - preliminary data Features Order codes VDS RDS(on) max ID STF11N65M2 650 V 0.67 7 A STFI11N65M2 Extremely low gate charge 3 Lower RDS(on) x area vs previous generation 1 2 2 3 1 Low gate input resistance 2 TO-220FP I P

STD7N60M2, STP7N60M2, STU7N60M2 N-channel 600 V, 0.86 typ., 5 A MDmesh II Plus low Qg Power MOSFET in DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB VDS @ RDS(on) Order codes ID 3 TJmax max 1 STD7N60M2 DPAK STP7N60M2 650 V 0.95 5 A TAB STU7N60M2 TAB Extremely low gate charge 3 3 2 Lower RDS(on) x area vs previous generation 2 1

STF11N65M2, STFI11N65M2 N-channel 650 V, 0.6 typ., 7 A MDmesh M2 Power MOSFETs in TO-220FP and I PAKFP packages Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STF11N65M2 650 V 0.68 7 A 25 W STFI11N65M2 Extremely low gate charge TO-220FP I2PAKFP (TO-281) Excellent output capacitance (C ) profile OSS 100% avalanche teste

STD5N60DM2 Datasheet N-channel 600 V, 1.38 typ., 3.5 A MDmesh DM2 Power MOSFET in a DPAK package Features VDS RDS(on) max. ID PTOT Order code TAB STD5N60DM2 600 V 1.55 3.5 A 45 W 3 2 1 Fast-recovery body diode DPAK Extremely low gate charge and input capacitance Low on-resistance D(2, TAB) 100% avalanche tested Extremely high dv/dt ruggedness

STD9HN65M2 N-channel 600 V, 0.71 typ., 5.5 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) D STD9HN65M2 600 V 0.82 5.5 A Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected Figure 1 Internal schematic diagram Applications D(

STB35N60DM2 N-channel 600 V, 0.094 typ., 28 A MDmesh DM2 Power MOSFET in a D PAK package Datasheet - production data Features R DS(on) Order code VDS ID PTOT TAB max. STB35N60DM2 600 V 0.110 28 A 210 W 3 Fast-recovery body diode 1 Extremely low gate charge and input capacitance Low on-resistance D2PAK 100% avalanche tested Extremely

STL24N60M2 N-channel 600 V, 0.186 typ., 18 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID S(2) Bottom view S(2) S(2) STL24N60M2 650 V 0.21 18 A G(1) D(3) Extremely low gate charge Lower RDS(on) x area vs previous generation Low gate input resistance PowerFLAT

STL33N60M2 N-channel 600 V, 0.115 typ., 22 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - production data Features Order code V DS @ T R I Jmax DS(on)max D STL33N60M2 650 V 0.135 22 A Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested Zener-protected Applications Switching app

STB33N60DM2, STP33N60DM2, STW33N60DM2 N-channel 600 V, 0.110 typ., 24 A MDmesh DM2 Power MOSFET in D PAK, TO-220 and TO-247 packages Datasheet - production data Features Order code V @ T R max. I DS Jmax. DS(on) D STB33N60DM2 650 V 0.130 24 A STP33N60DM2 650 V 0.130 24 A STW33N60DM2 650 V 0.130 24 A Fast-recovery body diode Extremely low gate charg

STL33N60DM2 N-channel 600 V, 0.115 typ., 21 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - production data Features V DS @ Order code RDS(on)max ID T Jmax 5 STL33N60DM2 650 V 0.140 21 A 4 3 2 Fast-recovery body diode 1 Extremely low gate charge and input capacitance Low on-resistance PowerFLAT 8x8 HV 100% ava

Preliminary Datasheet RJH60M2DPE R07DS0531EJ0100 600 V - 12 A - IGBT Rev.1.00 Application Inverter Aug 30, 2011 Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno

Preliminary Datasheet RJH60M2DPP-M0 R07DS0530EJ0100 600 V - 12 A - IGBT Rev.1.00 Application Inverter Sep 02, 2011 Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec

Preliminary Datasheet RJK03M2DPA 30V, 45A, 2.8m max. R07DS0766EJ0200 N Channel Power MOS FET Rev.2.00 High Speed Power Switching Feb 12, 2013 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code PWSN0008DE-A (Package nam

Preliminary Datasheet RJH60M2DPP-M0 R07DS0530EJ0300 600V - 12A - IGBT Rev.3.00 Application Inverter May 25, 2012 Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (85 ns typ.) in one package Trench gate and thin wafer tech

Preliminary Datasheet RJH60M2DPE R07DS0531EJ0300 600V - 12A - IGBT Rev.3.00 Application Inverter May 25, 2012 Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (85 ns typ.) in one package Trench gate and thin wafer technol

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

November 2001 IRFM210B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.77A, 200V, RDS(on) = 1.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 7.2 nC) planar, DMOS technology. Low Crss ( typical 6.8 pF) This advanced technology has been especially tailored to Fas

August 2005 FDFM2P110 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Applications FDFM2P110 combines the exceptional performance of Buck Boost Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a Features MicroFET package. This device is designed specifically as a single package -3.5 A

FSAM20SH60A SPMTM (Smart Power Module) General Description Features FSAM20SH60A is an advanced smart power module UL Certified No. E209204 (SPM) that Fairchild has newly developed and designed to 600V-20A 3-phase IGBT inverter bridge including control provide very compact and high performance ac motor ICs for gate driving and protection drives mainly targeting high speed low-pow

November 2001 IRFM220B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.13A, 200V, RDS(on) = 0.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar, DMOS technology. Low Crss ( typical 10 pF) This advanced technology has been especially tailored to Fast

August 2005 FDFM2N111 Integrated N-Channel PowerTrench MOSFET and Schottky Diode General Description Applications FDFM2N111 combines the exceptional performance of Standard Buck Converter Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a Features MicroFET package. This device is designed specifically as a single pack

IRLM210A Advanced Power MOSFET FEATURES BVDSS = 200 V n Avalanche Rugged Technology RDS(on) = 1.5 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = 0.77 A n Improved Gate Charge n Extended Safe Operating Area SOT-223 n Lower Leakage Current 10 A(Max.) @ VDS = 200V 2 n Lower RDS(ON) 1.185 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings

IRLM220A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.13 A Improved Gate Charge Extended Safe Operating Area SOT-223 Lower Leakage Current 10 A(Max.) @ VDS = 200V 2 Lower RDS(ON) 0.609 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum R

FSAM20SM60A SPMTM (Smart Power Module) General Description Features FSAM20SM60A is an advanced smart power module UL Certified No. E209204 (SPM) that Fairchild has newly developed and designed to 600V-20A 3-phase IGBT inverter bridge including control provide very compact and high performance ac motor ICs for gate driving and protection drives mainly targeting medium speed low-p

PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE687M23 OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE World's smallest transistor package footprint leads are completely underneath package body 0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance 0.25 1 HIGH GAIN BANDWIDTH PRODUCT fT =

PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE856M23 OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE World's smallest transistor package footprint leads are completely underneath package body 0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance 0.25 1 LOW NOISE FIGURE NF = 1.4 dB at

PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE685M23 OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE World's smallest transistor package footprint leads are completely underneath package body 0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance 0.25 1 HIGH GAIN BANDWIDTH PRODUCT fT =

PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE681M23 OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE World's smallest transistor package footprint leads are completely underneath package body 0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance 0.25 HIGH GAIN BANDWIDTH PRODUCT 1 fT =

PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M23 OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE OUTLINE M03 NEW MINIATURE M23 PACKAGE World's smallest transistor package footprint leads are completely underneath package body 0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance HIGH GAIN BANDWIDTH PRODUCT 0.25 1 fT =

BUK9M24-40E N-channel 40 V, 24 m logic level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetit

BUK7M20-40H N-channel 40 V, 20.0 m standard level MOSFET in LFPAK33 29 January 2019 Product data sheet 1. General description Automotive qualified standard level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications. 2. Features and benefits Fully aut

BUK7M21-40E N-channel 40 V, 21 m standard level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 Compliant R

BUK9M24-60E N-channel 60 V, 24 m logic level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetit

BUK9M20-40H N-channel 40 V, 20.0 m logic level MOSFET in LFPAK33 29 January 2019 Product data sheet 1. General description Automotive qualified logic level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications. 2. Features and benefits Fully automotiv

BUK7M27-80E N-channel 80 V, 27 m standard level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 Compliant R

BUK7M22-80E N-channel 80 V, 22 m standard level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 Compliant R

BUK9M28-80E N-channel 80 V, 28 m logic level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetit

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.13 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V 2 Low RDS(ON) 0.626 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 0.64 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 250V 2 Lower RDS(ON) 1.393 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 0.77 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V 2 Low RDS(ON) 1.169 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 1.1 Rugged Gate Oxide Technology Lower Input Capacitance ID = 0.92 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 250V 2 Low RDS(ON) 0.742 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va

BSM 25 GAL 120 DN2 IGBT Power Module Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 25 GAL 120 DN2 1200V 38A HALF BRIDGE GAL 1 C67076-A2009-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE = 20 k 1200

4V Drive Nch+Pch MOSFET SH8M24 Structure Dimensions (Unit mm) Silicon N-channel / P-channel MOSFET SOP8 Features 1) Low on-resistance. 2) Built-in G-S protection diode. 3) Small surface mount package (SOP8). Application Switching Each lead has same dimensions Packaging specifications Inner circuit (8) (7) (6) (5) Package Taping Type Code TB Basic

US6M2 Transistors 2.5V Drive Nch+Pch MOSFET US6M2 Structure Dimensions (Unit mm) Silicon N-channel MOSFET / TUMT6 Silicon P-channel MOSFET Features 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in G-S Protection Diode. Abbreviated symbol M02 Applications Switching

1.2V Drive Nch+Pch MOSFET EM6M2 Structure Dimensions (Unit mm) Silicon N-channel MOSFET / EMT6 Silicon P-channel MOSFET Features 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (1.2V drive). 4) Built-in G-S Protection Diode. Each lead has same dimensions Abbreviated symbol M02 Applications Inner circuit Switch

SP8M24FRA Datasheet 45V Nch+Pch Power MOSFET lOutline l Tr1 Nch Tr2 Pch Symbol VDSS 45V -45V SOP8 RDS(on)(Max.) 46m 63m ID 4.5A 3.5A PD 2.0W lFeatures l lInner circuit l 1) Low on - resistance 2) Small Surface Mount Package (SOP8) 3) Pb-free lead plating ; RoHS compliant 4) Halogen Free 5) AEC-Q101 Qualified lPa

SP8M21 SP8M21FRA Transistors AEC-Q101 Qualified 4V Drive Nch+Pch MOSFET SP8M21 SP8M21FRA Structure Dimensions (Unit mm) Silicon N-channel MOSFET / SOP8 Silicon P-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S protection diode. 3) Small and surface mount package (SOP8). Each lead has same dimensions Applications Switching Package specifications Inn

2.5V Drive Nch MOSFET 1.5V Drive Pch MOSFET TT8M2 Structure Dimensions (Unit mm) Silicon N-channel MOSFET/ TSST8 Silicon P-channel MOSFET (8) (7) (6) (5) Features 1) Low on-state resistance. (1) (2) (3) (4) 2) Low voltage drive. 3) High power package. Abbreviated symbol M02 Each lead has same dimensions Application Inner circuit Switching (8) (7) (6) (5)

SMM2348ES www.vishay.com Vishay Siliconix Medical N-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY High Quality Manufacturing Process Using VDS (V) 30 SMM Process Flow RDS(on) ( ) at VGS = 10 V 0.024 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.032 100 % Rg and UIS Tested ID (A) 8 Material categorization Configuration Single For definiti

SUM25P10-138 Vishay Siliconix P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)c Qg (Typ.) 100 % Rg and UIS Tested 0.138 at VGS = - 10 V - 16.3 Material categorization 0.141 at VGS = - 7.5 V - 16.1 24 nC For definitions of compliance please see - 100 www.vishay.com/doc?99912 0.142 at VGS = - 6 V - 16.

SQM25N15-52 www.vishay.com Vishay Siliconix Automotive N-Channel 150 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 150 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.052 100 % Rg and UIS Tested ID (A) 25 AEC-Q101 Qualifiedd Configuration Single Material categorization For definitions of compliance pleas

SUM90N08-6m2P Vishay Siliconix N-Channel 75-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Qg (Typ) 175 C Junction Temperature 0.0062 at VGS = 10 V 75 RoHS 90d 75 100 % Rg and UIS Tested COMPLIANT APPLICATIONS Power Supply - Secondary Synchronous Rectification Industrial D TO-263 G G D S Top Vie

SQM200N04-1m1L www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 40 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.0011 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.0013 AEC-Q101 Qualifiedd ID (A) 200 Material categorization Configuration Sin

SQD100N03-3m2L www.vishay.com Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 C MOSFET FEATURES TrenchFET Power MOSFET PRODUCT SUMMARY 100 % Rg and UIS Tested VDS (V) 30 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = 10 V 0.0032 Material categorization RDS(on) ( ) at VGS = 4.5 V 0.0039 For definitions of compliance please see ID (A) 100 www.vishay.com/doc?

SUM90N03-2m2P Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested Material categorization 0.0022 at VGS = 10 V 90 30 82 nC For definitions of compliance please see 0.0027 at VGS = 4.5 V 90 www.vishay.com/doc?99912 TO-263 APPLICATIONS D OR-ing

SUP90N08-8m2P Vishay Siliconix N-Channel 75 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) RDS(on) ( ) ID (A) Qg (Typ) 175 C Junction Temperature 75 0.0082 at VGS = 10 V 100 % Rg and UIS Tested 90d 58 Material categorization For definitions of compliance please see www.vishay.com/doc?99912 TO-220AB APPLICATIONS Power S

SUM27N20-78 Vishay Siliconix N-Channel 200 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 0.078 at VGS = 10 V 27 Low Thermal Resistance Package 200 0.083 at VGS = 6 V 26 PWM Optimized for Fast Switching Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-263 Is

SQM200N04-1m7L www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 40 Package with low thermal resistance RDS(on) ( ) at VGS = 10 V 0.0017 100 % Rg and UIS tested RDS(on) ( ) at VGS = 4.5 V 0.0020 AEC-Q101 qualified d ID (A) 200 Configuration Single Material categorization

SUM90N10-8m2P Vishay Siliconix N Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) RDS(on) ( ) ID (A) Qg (Typ) 175 C Junction Temperature RoHS 0.0082 at VGS = 10 V 100 COMPLIANT 90d 97 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Supply - Secondary Synchronous Rectification

SQM200N04-1m8 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 40 Package with low thermal resistance RDS(on) ( ) at VGS = 10 V 0.0018 100 % Rg and UIS tested ID (A) 200 AEC-Q101 qualified d Configuration Single Package TO-263-7L Material categorization for definitions

SUM23N15-73 Vishay Siliconix N-Channel 150 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 0.073 at VGS = 10 V 23 Low Thermal Resistance Package 150 0.077 at VGS = 6 V 22.5 PWM Optimized Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch TO-2

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CMPDM202PH SURFACE MOUNT www.centralsemi.com P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMPDM202PH SILICON MOSFET is a High Current P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers High Current, Low rDS(ON), Low Threshold Volta

CDM22010-650 www.centralsemi.com SILICON N-CHANNEL POWER MOSFET DESCRIPTION 10 AMP, 650 VOLT The CENTRAL SEMICONDUCTOR CDM22010-650 is a high current, 650 Volt N-Channel power MOSFET designed for high voltage, fast switching applications such as Power Factor Correction (PFC), lighting and power inverters. This MOSFET combines high voltage capability with low rDS(ON), low thres

CMPDM203NH SURFACE MOUNT www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMPDM203NH SILICON MOSFET is a High Current N-Channel Enhancement-mode Silicon MOSFET, manufactured by the N-Channel DMOS Process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers High Current, Low rDS(ON), Low Threshold Volta

DMP22M2UPS Green 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package Cooler Running Applications BVDSS RDS(ON) max TC = +25 C High Conversion Efficiency Low RDS(ON) Minimizes On State Losses 2.5m @ VGS = -10V -60A -20V

AUTOMOTIVE GRADE AUIRL7766M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 100V Optimized for Automotive DC-DC and other Heavy Load Applications RDS(on) typ. 8.0m Logic Level Gate Drive max. 10m Exceptionally Small Footprint and Low Profile ID (Silicon Limited) 51A High Power Density Qg (typical) 44nC L

AUTOMOTIVE GRADE AUIRF7648M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 60V Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 5.5m Exceptionally Small Footprint and Low Profile max. 7.0m High Power Density ID (Silicon Limited) 68A Low Parasitic Parameters Qg (typic

AUTOMOTIVE GRADE AUIRL7736M2TR Automotive DirectFET Power MOSFET Logic Level V(BR)DSS 40V Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 2.2m other Heavy Load Applications max. 3.0m Exceptionally Small Footprint and Low Profile ID (Silicon Limited) 112A High Power Density Qg (typical) 52nC

AUTOMOTIVE GRADE AUIRF7675M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 150V Optimized for Class D Audio Amplifier Applications Low Rds(on) for Improved Efficiency RDS(on) typ. 47m Low Qg for Better THD and Improved Efficiency max. 56m Low Qrr for Better THD and Lower EMI Rg (typical) 1.2 Low Parasiti

D a t a S h e e t , Aug. 2010 Control Integrated POwer System (CIPOS ) IGCM2 0F60HA http //www.lspst.com F o r P o w e r M a n a g e m e n t A p p l i c a t i o n CIPOS IGCM20F60HA Revision History 2010-08 Ver.1.1 Previous Version Datasheet Ver. 1.0 Page Subjects (major changes since last revision) 11 tFLTCLR Authors Junho Song, Junbae Lee and Daewoong Chung E

Technische Information / technical information IGBT-Module BSM200GB120DLC IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter H chstzul ssige Werte / maximum rated values Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V collector-emitter voltage Kollektor-Dauergleichstro

AUTOMOTIVE GRADE AUIRF7734M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 3.8m Exceptionally Small Footprint and Low Profile max. 4.9m High Power Density ID (Silicon Limited) 72A Low Parasitic Parameters Qg (typic

D a t a S h e e t , Aug. 2010 Control Integrated POwer System (CIPOS ) IGCM2 0F60G A http //www.lspst.com F o r P o w e r M a n a g e m e n t A p p l i c a t i o n CIPOS IGCM20F60GA Revision History 2010-08 Ver.1.1 Previous Version Datasheet Ver. 1.0 Page Subjects (major changes since last revision) 11 tFLTCLR Authors Junho Song, Junbae Lee and Daewoong Chung

AUTOMOTIVE GRADE AUIRF7736M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 2.5m Exceptionally Small Footprint and Low Profile max. 3.0m High Power Density ID (Silicon Limited) 108A Low Parasitic Parameters Qg (typi

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM21N50 500 V 21 A 0.25 Power MOSFETs IXFH/IXFM/IXFT24N50 500 V 24 A 0.23 IXFH/IXFT26N50 500 V 26 A 0.20 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr 250 ns TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to

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IXTH 20N60 VDSS = 600 V MegaMOSTMFET IXTM 20N60 ID25 = 20 A RDS(on) = 0.35 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C 15N60 15 A TO-204 AE (IXTM) 20N60 20 A IDM TC = 25 C, p

VWM 270-0075X2 VDSS = 75 V Three phase full bridge ID25 = 270 A with Trench MOSFETs RDS(on) = 2.1 m L+ G3 G5 T1 T3 T5 G1 S3 S5 S1 L1 L2 L3 G4 G6 T2 T4 T6 G2 S4 S6 S2 L- Applications MOSFET T1 - T6 AC drives Symbol Conditions Maximum Ratings in automobiles VDSS TVJ = 25 C to 150 C 75 V - electric power steering VGS 20 V - starter generator in indu

Datasheet.Live

VCES IC25 VCE(sat) Low VCE(sat) IXGH/IXGM 25 N100 1000 V 50 A 3.5 V High speed IGBT IXGH/IXGM 25 N100A 1000 V 50 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1000 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C50 A IC90 TC = 90 C25 A TO-204 AE (IXGM) ICM TC = 25 C, 1 m

FMD 21-05QC FDM 21-05QC ID25 = 21 A Q-Class VDSS = 500 V Power MOSFETs RDSon typ. = 190 m Chopper Topologies in ISOPLUS i4-PACTM FMD FDM 3 3 Preliminary data 5 4 4 1 1 5 2 2 Features MOSFET Q-Class Power MOSFET technology Symbol Conditions Maximum Ratings - low RDSon - low gate charge for high frequency VDSS TVJ = 25 C to 150 C 500 V operat

VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGH/IXGM 20 N60 600 V 40 A 2.5 V High speed IGBT IXGH/IXGM 20 N60A 600 V 40 A 3.0 V Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C40 A IC90 TC = 90 C20 A TO-204 AE (IXGM) ICM TC = 25 C, 1 ms

VCES IC25 VCE(sat) Low VCE(sat) IXGH/IXGM 25 N100 1000 V 50 A 3.5 V High speed IGBT IXGH/IXGM 25 N100A 1000 V 50 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1000 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C50 A IC90 TC = 90 C25 A TO-204 AE (IXGM) ICM TC = 25 C, 1 m

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 15 N60 600 V 15 A 0.50 W Power MOSFETs IXFH/IXFM 20 N60 600 V 20 A 0.35 W trr 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 600 V (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 2

Advance Technical Information PolarHVTM HiPerFET VDSS = 500V FMM22-05PF N-Channel Power MOSFET ID25 = 13A Phase Leg Topology RDS(on) 270m 3 3 T1 trr(max) 200ns 5 5 4 4 T2 ISOPLUS i4-PakTM 1 1 2 2 Symbol Test Conditions Maximum Ratings TJ -55 ... +150 C TJM 150 C 1 Tstg -55 ... +150 C Isolated Tab VIS

Advance Technical Information PolarHVTM HiPerFET VDSS = 600V FMM22-06PF N-Channel Power MOSFET ID25 = 12A Phase leg Topology RDS(on) 350m 3 3 T1 trr(max) 200ns 5 5 4 4 T2 1 1 2 ISOPLUS i4-PakTM 2 Symbol Test Conditions Maximum Ratings TJ -55 ... +150 C TJM 150 C 1 Tstg -55 ... +150 C Isolated Tab VISO

VDSS ID25 RDS(on) MegaMOSTMFET IXTH / IXTM 21N50 500 V 21 A 0.25 IXTH / IXTM 24N50 500 V 24 A 0.23 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V D (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C 21N50 21 A

M28S-B MCC Micro Commercial Components TM M28S-C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 M28S-D Phone (818) 701-4933 Fax (818) 701-4939 Features Capable of 0.625Watts of Power Dissipation. NPN Silicon Collector-current 1.0A Plastic-Encapsulate Collector-base Voltage 40V Operating and storage junction temperature range -55OC to +1

M28S-B MCC Micro Commercial Components TM M28S-C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 M28S-D Phone (818) 701-4933 Fax (818) 701-4939 Features Capable of 0.625Watts of Power Dissipation. NPN Silicon Collector-current 1.0A Plastic-Encapsulate Collector-base Voltage 40V Operating and storage junction temperature range -55OC to +1

M28S-B MCC Micro Commercial Components TM M28S-C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 M28S-D Phone (818) 701-4933 Fax (818) 701-4939 Features Capable of 0.625Watts of Power Dissipation. NPN Silicon Collector-current 1.0A Plastic-Encapsulate Collector-base Voltage 40V Operating and storage junction temperature range -55OC to +1

205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246,www.omnirel.com ELECTRICAL CHARACTERISTICS OM200F120CMC (Tc= 25 C unless otherwise specified) Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage, VCE=0V VCES 1200 V Zero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 10 A Gate Emitter Leakage Current, VGE=+/-15

205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, ww.omnirel.com ELECTRICAL CHARACTERISTICS OM200L120CMC (Tc= 25 C unless otherwise specified) Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage, VCE=0V VCES 1200 V Zero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 2 A Gate Emitter Leakage Current, VGE=+/-15V

205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.com ELECTRICAL CHARACTERISTICS OM200F120CMA (Tc= 25 C unless otherwise specified) Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage, VCE=0V VCES 1200 V Zero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 10 A Gate Emitter Leakage Current, VGE=+/-1

205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.com ELECTRICAL CHARACTERISTICS OM200L120CMD (Tc= 25 C unless otherwise specified) Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage, VCE=0V VCES 1200 V Zero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 2 A Gate Emitter Leakage Current, VGE=+/-20

205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.com ELECTRICAL CHARACTERISTICS OM200F120CMD (Tc= 25 C unless otherwise specified) Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage, VCE=0V VCES 1200 V Zero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 10 A Gate Emitter Leakage Current, VGE=+/-1

205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.com ELECTRICAL CHARACTERISTICS OM200L120CMA (Tc= 25 C unless otherwise specified) Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage, VCE=0V VCES 1200 V Zero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 2 A Gate Emitter Leakage Current, VGE=+/-15

OM23P06ST OM20P10ST OM12P10ST OM8P20ST OM8P25ST OM2P50ST OM23P06SA OM20P10SA OM12P10SA OM8P20SA OM8P25SA OM2P50SA POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE, P-CHANNEL 60V To 500V P-Channel MOSFET In A Hermetic Package D FEATURES Isolated Hermetic Metal Package P-Channel G Fast Switching, Low Drive Current Ease of Paralleling For Added Power Available Scree

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

This product complies with the RoHS Directive (EU 2002/95/EC). MTM23227 Silicon N-channel MOSFET For switching Overview Package MTM23227 is the l N-channel MOS FET that is highly suitable ofr DC-DC Code converter and other switching circuits. SMini3-G1-B Pin Name Features 1 Gate 2 Source Realization of low on-resistance, using extremely fine process (4.6 mW

MTM23110 Silicon P-channel MOSFET For switching Overview Package MTM23110 is P-channel MOS FET for load switch circuits. Code SMini3-G1-B Features Pin Name Low voltage drive (1.8 V, 2.5 V, 4 V) 1 Gate Realization of low on-resistance, using extremely fine process 2 Source Contributes to miniaturization of sets, reduction of component count. 3

Doc No. TT4-EA-13115 Revision. 2 Product Standards MOS FET MTM232270LBF MTM232270LBF Silicon N-channel MOS FET Unit mm For switching 2.0 MTM13227 in SMini3 type package 0.3 0.15 3 Features Low drain-source On-state resistance RDS(on) typ = 85 m (VGS = 4.0 V) Low drive voltage 2.5 V drive Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL Level 1 c

MTM23123 Silicon P-channel MOSFET For switching Overview Package MTM23123 is P-channel MOS FET for load switch circuits. Code SMini3-G1-B Features Pin Name Low voltage drive (2.5 V, 4 V) 1 Gate Realization of low on-resistance, using extremely fine process 2 Source Contributes to miniaturization of sets, reduction of component count. 3 Drain E

Doc No. TT4-EA-12901 Revision. 3 MOS FET MTM232230LBF MTM232230LBF N MOS FET Unit mm 2.0 0.3 0.15 3 RDS(on) typ = 20 m (VGS = 4.0 V) 2.5 V (EU RoHS / UL-94

MTM23223 Silicon N-channel MOSFET For switching Overview Package MTM23223 is N-channel MOS FET for load switch circuits. Code SMini3-G1-B Pin Name Features 1 Gate Low voltage drive (2.5 V, 4 V) 2 Source Realization of low on-resistance, using extremely fine process 3 Drain Contributes to miniaturization of sets, reduction of component count.

UNISONIC TECHNOLOGIES CO., LTD UTM2054 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTM2054 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 35m @VGS=10V * RDS(ON)= 45m @VGS=4.5V * RDS(ON)= 11

UNISONIC TECHNOLOGIES CO., LTD UTM2513 Power MOSFET N-CHANNEL ENHANCEMENT MODE FEATURES * RDS(ON) = 10.5m (typ.) @VGS = 10 V * RDS(ON) = 16m (typ.) @VGS = 4.5 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain Lead-free UTM2513L Halogen-free UTM2513G 1.Gate 3.Source ORDERING INFORMATION

UNISONIC TECHNOLOGIES CO., LTD M28S NPN SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER 1 FEATURES TO-92 * Excellent HFE Linearity * High DC Current Gain 3 * High Power Dissipation APPLICATION 1 * Audio Output Driver Amplifier 2 * General Purpose Switch SOT-23 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Halogen Free

UNISONIC TECHNOLOGIES CO., LTD UTM2054 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTM2054 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 35m @VGS=10V * RDS(ON)= 45m @VGS=4.5V * RDS(ON)= 11

APT20M22LVFR 200V 100A 0.022 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche T

APT20M22JVR 200V 97A 0.022 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche

APT20M22JVR 200V 97A 0.022 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche

APT20M20B2FLL APT20M20LFLL 200V 100A 0.020W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with excepti

APT20M20B2FLL APT20M20LFLL 200V 100A 0.020 R FREDFET POWER MOS 7 FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching loss

APT20M20B2LL APT20M20LLL 200V 100A 0.020W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast

APT20M22B2VFR 200V 100A 0.022 POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanch

APT20M26WVR 200V 65A 0.026 POWER MOS V TO-267 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

APT10M25BVR 100V 75A 0.025 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower

APT10M25SVR 100V 75A 0.025 POWER MOS V D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower

APT20M20B2LL APT20M20LLL 200V 100A 0.020 R POWER MOS 7 MOSFET T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along wi

APT10M25BVFR 100V 75A 0.025 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes

APT10M25BVFR 100V 75A 0.025 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes

APT20M20JLL 200V 106A 0.020 W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's

APT20M22B2VR 200V 100A 0.022 POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D L

APT20M22LVR 200V 100A 0.022 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.. Faster Switching 100% Avalanche Tested D Low

APT20M20JFLL 200V 106A 0.020W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent wi

SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor DFN-8 8 This integrated device represents a new level of safety and board-space reduction by combining the 20V P-Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated product provides higher efficiency and accuracy for battery powered MOSFET

SUM201MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor DFN-8 This integrated device represents a new level of safety and board-space reduction by combining the 20V P-Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated product provides higher efficiency and accuracy for battery powered MOSFET portab

VDS 1200 V ID @ 120 C 50 A CPM2-1200-0025B RDS(on) 25 m Silicon Carbide Power MOSFET TM Z-FET MOSFET N-Channel Enhancement Mode Features Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS Compliant Benefits

VDS 1.2 kV CCS050M12CM2 1.2kV, 50A Silicon Carbide RDS(on) (TJ = 25 C) 25 m Six-Pack (Three Phase) Module EOFF (TJ = 150 C) 0.6 mJ Z-FETTM MOSFET and Z-RecTM Diode Features Package Ultra Low Loss Zero Reverse Recovery Current Zero Turn-off Tail Current High-Frequency Operation Positive Temperature Coefficient on VF and VDS(on) Cu Baseplate, AlN DBC Sy

Technische Information / Technical Information IGBT-Module BSM 200 GB 170 DLC IGBT-Modules H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung Tvj = 25 C VCES 1700 V collector-emitter voltage TC = 80 C IC,nom. 200 A Kollektor-Dauergleichstrom DC-collector current TC = 25 C IC 400 A Periodischer Kollek

Technische Information / Technical Information IGBT-Module BSM 200 GD 60 DLC IGBT-Modules H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 600 V collector-emitter voltage TC= 45 C IC,nom. 200 A Kollektor-Dauergleichstrom DC-collector current TC= 25 C IC 226 A Periodischer Kollektor Spitzenstrom

BSM 25 GB 120 DN2 IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 25 GB 120 DN2 1200V 38A HALF-BRIDGE 1 C67076-A2109-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE = 20 k 1200 Gate-emitter voltage VGE

Technische Information / Technical Information IGBT-Module BSM 20 GD 60 DLC E3224 IGBT-Modules H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 600 V collector-emitter voltage TC= 80 C IC,nom. 20 A Kollektor-Dauergleichstrom DC-collector current TC= 25 C IC 32 A Periodischer Kollektor Spitzenst

Technische Information / Technical Information IGBT-Module BSM200GB120DLC IGBT-Modules vorl ufige Daten preliminary data H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 1200 V collector-emitter voltage TC = 80 C IC,nom. 200 A Kollektor-Dauergleichstrom DC-collector current TC = 25 C IC 420

BSM 25 GD 120 DN2 IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 25 GD 120 DN2 1200V 35A ECONOPACK 2 C67076-A2505-A67 BSM 25 GD120DN2E3224 1200V 35A ECONOPACK 2K C67070-A2505-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1

Technische Information / technical information IGBT-Module BSM200GAL120DLC IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Vorl ufige Daten / preliminary data H chstzul ssige Werte / maximum rated values Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V collector-emit

BSM 200 GA 120 DN2 IGBT Power Module Single switch Including fast free-wheeling diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 200 GA 120 DN2 1200V 300A SINGLE SWITCH 1 C67076-A2006-A70 BSM 200 GA 120 DN2 S 1200V 300A SSW SENSE 1 C67070-A2006-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collect

BSM 200 GB 120 DN2 IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 200 GB 120 DN2 1200V 290A HALF-BRIDGE 2 C67070-A2300-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE = 20 k 1200 Gate-emitter voltage VGE

Technische Information / technical information IGBT-Module BSM200GA120DLCS IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter H chstzul ssige Werte / maximum rated values Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V collector-emitter voltage Kollektor-Dauergleichstr

BSM 200 GAL 120 DN2 IGBT Power Module Single switch with chopper diode at collector Chopper diode like diode of BSM300GA120DN2 Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 200 GAL 120 DN2 1200V 290A HB 200GAL C67070-A2301-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE =

Technische Information / technical information IGBT-Module BSM200GA120DLC IGBT-modules IGBT-Wechselrichter / IGBT-inverter H chstzul ssige Werte / maximum rated values Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V collector-emitter voltage Kollektor-Dauergleichstrom T = 80 C I 200 A DC-collector current T = 25 C I 370 A Periodischer Kollektor Spitzenstrom t = 1 ms, T = 80

BSM 25 GD 120 DN2 E3224 IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 25 GD 120 DN2 1200V 35A ECONOPACK 2 C67076-A2505-A67 BSM 25 GD120DN2E3224 1200V 35A ECONOPACK 2K C67070-A2505-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage

BSM 200 GA 170 DN2 IGBT Power Module Single switch Including fast free-wheeling diodes Package with insulated metal base plate RG on,min = 6.8 Ohm Type VCE IC Package Ordering Code BSM 200 GA 170 DN2 1700V 290A SINGLE SWITCH 1 C67070-A2705-A67 BSM 200 GA 170 DN2 S 1700V 290A SSW SENSE 1 C67070-A2707-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter vo

Technische Information / Technical Information IGBT-Module BYM 200 B 170 DN2 IGBT-Modules vorl ufige Daten preliminary data H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Sperrspannung der Diode Tvj = 25 C VCES 1700 V Diode rerverse voltage Dauergleichstrom TC = 80 C IF 200 A DC forward current Periodischer Spitzenstrom tp =

Technische Information / Technical Information IGBT-Module BSM 200 GB 60 DLC IGBT-Modules H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 600 V collector-emitter voltage Tc= 50 C IC,nom. 200 A Kollektor-Dauergleichstrom DC-collector current Tc= 25 C IC 230 A Periodischer Kollektor Spitzenstrom

Technische Information / Technical Information IGBT-Module BSM 200 GA 170 DLC IGBT-Modules H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 1700 V collector-emitter voltage TC = 80 C IC,nom. 200 A Kollektor-Dauergleichstrom DC-collector current TC = 25 C IC 400 A Periodischer Kollektor Spitzens

FRM234D, FRM234R, FRM234H 7A, 250V, 0.70 Ohm, Rad Hard, June 1998 N-Channel Power MOSFETs Features Package 7A, 250V, RDS(on) = 0.70 TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(Si)

FRM230D, FRM230R, FRM230H 8A, 200V, 0.50 Ohm, Rad Hard, June 1998 N-Channel Power MOSFETs Features Package 8A, 200V, RDS(on) = 0.50 TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(Si)

FRM244D, FRM244R, FRM244H 12A, 250V, 0.400 Ohm, Rad Hard, June 1998 N-Channel Power MOSFETs Features Package 12A, 250V, RDS(on) = 0.400 TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(Si)

IRFM250D MECHANICAL DATA N CHANNEL Dimensions in mm (inches) POWER MOSFET VDSS 200V ID(cont) 27.4A RDS(on) 0.100 FEATURES N CHANNEL MOSFET

SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS12M2A High Voltage Hermetic TO-257AB Isolated Metal Package Ideally suited for Power Linear, Switching and general Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VCBO Collector Base Voltage 100V VCEO Collector Emitter Voltage 100V VEBO E

SGM2014AM Preliminary GaAs N-channel Dual Gate MES FET Description The SGM2014AM is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers. Features Low voltage operation Low noise NF = 1.5dB (typ.) at 900MHz High gain Ga = 18dB (typ.) at

SGM2016AN GaAs N-channel Dual-Gate MES FET Description M-281 The SGM2016AN is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone, and DBS IF amplifiers. Features Ultra-small package Low voltage operation Low noise NF = 1.2dB (typ.) at 900MHz

M28ST 1A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURE High DC Current Gain and Large Current Capability CLASSIFICATION OF hFE (1) Product-Rank M28ST-B M28ST-C M28ST-D Range 300 550 500 700 650 1000 Collector 1Emitter 1 1 1 2 2Collector 2 2 2 3Base

SUM2153 0.81A , 20V , RDS(ON) 310 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SOT-363 These miniature surface mount MOSFETs utilize a high A cell density trench process to provide low RDS(on) and to E L ensure minimal power loss and heat dissipation

M28S 1A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-23 Excellent hFE Linearity A High DC Current Gain L 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 Product-Rank M28S-B M28S-C M28S-D 2 K E Range 300 550 500 700 650 1000 D Marking 28S Collector H

SGM2306A 5A, 30V,RDS(ON) 35m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description SOT-89 The SGM2306A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SGM2306A is universally used for all commercial- industrial surface mount applications.

SGM2310A 5 A, 60 V, RDS(ON) 115 m N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 DESCRIPTION A The SGM2310A utilized advanced processing techniques to 4 achieve the lowest possible on-resistance, extremely efficient Top View C B and cost-effectiveness device. The SGM231

SGM2305A -3.2 A, -30 V, RDS(ON) 80 m P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES A The SGM2305A provide the designer with best combination of fast switching, 4 Top View C B low on-resistance and cost-effectiveness. The SGM2305A is universally preferred

TSM240N03CX 30V N-Channel Power MOSFET SOT-23 Key Parameter Performance Pin Definition 1. Gate Parameter Value Unit 2. Source 3. Drain VDS 30 V VGS = 10V 24 Note RDS(on) (max) m MSL 1 (Moisture Sensitivity Level) VGS = 4.5V 34 per J-STD-020 Qg 4.1 nC Block Diagram Ordering Information Ordering code Package Packing TSM240N03CX RFG SOT-23 3kpcs /

TSM23N50CN 500V N-Channel Power MOSFET TO-3PN Pin Definition PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Drain 3. Source 500 0.22 @ VGS =10V 23 General Description The TSM23N50CN N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide

TSM2323 20V P-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition VDS (V) RDS(on)(m ) ID (A) 1. Gate 39 @ VGS = -4.5V -4.7 2. Source 3. Drain -20 52 @ VGS = -2.5V -4.1 68 @ VGS = -1.8V -2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch P-Chann

TSM2311 20V P-Channel MOSFET SOT-23 Pin Definition PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Source 3. Drain 55 @ VGS = -4.5V -4.0 -20 85 @ VGS = -2.5V -2.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch P-Channel MOSFET Orderi

TSM2301A Taiwan Semiconductor P-Channel Power MOSFET -20V, -2.8A, 130m KEY PERFORMANCE PARAMETERS Features PARAMETER VALUE UNIT Advance Trench Process Technology VDS -20 V High Density Cell Design for Ultra Low On- resistance VGS = -4.5V 130 RDS(on) (max) m VGS = -2.5V 190 Application Qg 7.2 nC Telecom power Consumer Electronics SOT-23

TSM2328 100V N-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Source 3. Drain 250 @ VGS =10V 1.5 100 General Description The TSM2328 utilized advanced processing techniques to achieve the lowest possible On-Resistance, extremely efficient and cost-effectiveness device. The TSM2328 is universally used for all commercial-in

TSM2314 20V N-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Source 3. Drain 33 @ VGS = 4.5V 4.9 40 @ VGS = 2.5V 4.4 20 100 @ VGS = 1.8V 2.9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Orderin

TSM2306 30V N-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition VDS (V) RDS(on)(m ) ID (A) 1. Gate 2. Source 57 @ VGS =10V 3.5 3. Drain 30 94 @ VGS =4.5V 2.8 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No. Pa

TSM2N70 700V N-Channel Power MOSFET Pin Definition TO-220 TO-251 TO-252 PRODUCT SUMMARY 1. Gate (IPAK) (DPAK) 2. Drain VDS (V) RDS(on)( ) ID (A) 3. Source 700 6.5 @ VGS =10V 1 General Description The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-st

TSM2310 20V N-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Source 33 @ VGS = 4.5V 4 3. Drain 20 40 @ VGS = 2.5V 3.2 100 @ VGS = 1.8V 2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Info

TSM2312 20V N-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition VDS (V) RDS(on)(m ) ID (A) 1. Gate 2. Source 33 @ VGS = 4.5V 4.9 3. Drain 20 40 @ VGS = 2.5V 4.4 51 @ VGS = 1.8V 3.9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering In

TSM210N06 60V N-Channel Power MOSFET TO-220 Pin Definition PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Drain 3. Source 60 3.1 @ VGS =10V 210 Features Block Diagram Advanced Trench Technology Low RDS(ON) 3.1m (Max.) Low gate charge typical @ 160nC (Typ.) Low Crss typical @ 300pF (Typ.) Ordering Information Part No. Package Packing

TSM2323 20V P-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition VDS (V) RDS(on)(m ) ID (A) 1. Gate 2. Source 39 @ VGS = -4.5V -4.7 3. Drain -20 52 @ VGS = -2.5V -4.1 68 @ VGS = -1.8V -2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch P-C

TSM2302 20V N-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition VDS (V) RDS(on)(m ) ID (A) 1. Gate 2. Source 65 @ VGS = 4.5V 2.8 3. Drain 20 95 @ VGS = 2.5V 2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No.

TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 TO-252 Pin Definition PRODUCT SUMMARY (IPAK) (DPAK) 1. Gate 2. Drain VDS (V) RDS(on)( ) ID (A) 3. Source 600 4.4 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFE

TSM20N50 500V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 500 0.3 @ VGS =10V 18 General Description The TSM20N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, prov

TSM2307 30V P-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Source 3. Drain 95 @ VGS = -10V -3 -30 140 @ VGS = -4.5V -2 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No

TSM2308 60V N-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Source 3. Drain 156 @ VGS = 10V 3 60 192 @ VGS = 4.5V 2.1 Block Diagram Features Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application DC-DC Power System Load Switch Ordering Information

TSM2N60S 600V N-Channel Power MOSFET SOT-223 Pin Definition PRODUCT SUMMARY 1. Gate 2. Drain VDS (V) RDS(on)( ) ID (A) 3. Source 600 5 @ VGS =10V 0.6 General Description The TSM2N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand

TSM2611ED 20V Dual N-Channel MOSFET w/ESD Protected SOT-26 Pin Definition PRODUCT SUMMARY 1. Source 1 6. Gate 1 VDS (V) RDS(on)(m ) ID (A) 2. Drain 1 5. Drain 2 3. Source 2 4. Gate 2 20 @ VGS = 4.5V 6 20 28 @ VGS = 2.5V 5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On resistance ESD Protected HBM

TSM2NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 600 4.4 @ VGS =10V 1 General Description The TSM2NB60 N-Channel Power MOSFET is TO-251 TO-252 (IPAK) (DPAK) produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resi

TSM2303 30V P-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Source 3. Drain 180 @ VGS =-10V -1.3 -30 300 @ VGS =-4.5V -1.1 Block Diagram Features Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Portable Devices High Speed Switch Ordering Info

TSM2301 20V P-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition VDS (V) RDS(on)(m ) ID (A) 1. Gate 130 @ VGS = -4.5V -2.8 2. Source -20 3. Drain 190 @ VGS = -2.5V -2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch P-Channel MOSFET Orderi

TSM2302 20V N-Channel MOSFET SOT-23 Pin Definition PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Source 3. Drain 65 @ VGS = 4.5V 2.8 20 95 @ VGS = 2.5V 2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No.

TSM2N7000K 60V N-Channel MOSFET TO-92 Pin Definition PRODUCT SUMMARY 1. Source VDS (V) RDS(on)( ) ID (mA) 2. Gate 3. Drain 5 @ VGS = 10V 100 60 5.5 @ VGS = 5V 100 Features Block Diagram Low On-Resistance ESD Protection High Speed Switching Low Voltage Drive Ordering Information Part No. Package Packing TSM2N7000KCT B0 TO-92 1Kpcs / Bulk

TSM2N7002KD 60V N-Channel MOSFET SOT-363 PRODUCT SUMMARY Pin Definition 1. Source 2 6. Drain 2 VDS (V) RDS(on)(m ) ID (A) 2. Gate 2 5. Gate 1 3. Drain 1 4. Source 1 2 @ VGS = 10V 300 60 4 @ VGS = 4.5V 200 Features Block Diagram Low On-Resistance ESD Protection High Speed Switching Low Voltage Drive Ordering Information Part No. Package Pa

TSM2318 40V N-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Source 3. Drain 45 @ VGS = 10V 3.9 40 62.5 @ VGS = 4.5V 3.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch Stepper Motors Ordering Information Pa

TSM2N7002KCX Taiwan Semiconductor N-Channel Power MOSFET 60V, 300mA, 2 FEATURES KEY PERFORMANCE PARAMETERS Low On-Resistance PARAMETER VALUE UNIT ESD Protected 2KV VDS 60 V High Speed Switching VGS = 10V 2 Low Voltage Drive RDS(on) (max) VGS = 4.5V 4 Qg 0.4 nC APPLICATION Logic Level translators DC-DC Converter SOT-23 Note

TSM2305 20V P-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Source 3. Drain 55 @ VGS =-4.5V -3.2 80 @ VGS =-2.5V -2.7 -20 130 @ VGS =-1.8V -2.0 Block Diagram Features Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Battery Management High Spe

TSM2N7002K 60V N-Channel MOSFET SOT-23 SOT-323 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)( ) ID (mA) 2. Source 3. Drain 2 @ VGS = 10V 300 60 4 @ VGS = 4.5V 200 Features Block Diagram Low On-Resistance ESD Protected 2KV High Speed Switching Low Voltage Drive Ordering Information Part No. Package Packing TSM2N7002KCX RF SOT-23

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 M28S TRANSISTOR (NPN) 1.EMITTER FEATURES 2.COLLECTOR High DC Current Gain and Large Current Capability 3.BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbo Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Sustaining Voltage 20 V VEBO

SEMICONDUCTOR FM200CD1D5B TECHNICAL DATA 150V / 200A (Common-Drain) 2-PACK MOSFET MODULE FEATURES Low RDS(on) High frequency operation dv/dt ruggedness Fast switching APPLICATION Battery Management System Electric Vehicle OUTLINE DRAWING INTERNAL CIRCUIT Unit mm _ _ _ 13 0.3 13 0.3 13 0.3 + + + 6 7 6 7 1 1 3 5 23 5 4 2 4 _ _ 23 0.3 23 0.3 + +

SEMICONDUCTOR GM200HB12CT TECHNICAL DATA 1200V/200A 2 IN ONE PACKAGE TENTATIVE FEATURES IGBT New Technology Unit mm OUTLINE DRAWING Low VCE(sat) Low Turn-off losses _ 108.5 0.2 + _ 6.5 0.2 + _ _ 28 0.2 28 0.2 + + Short tail current Positive temperature coefficient G2 E2 APPLICATION E1 AC & DC Motor controls G1 M6 General purpose inverters Optimize

SEMICONDUCTOR FM200HB1D5B TECHNICAL DATA 150V / 200A (Half - Bridge) 2 - PACK MOSFET MODULE FEATURES Low RDS(on) High frequency operation dv/dt ruggedness Fast switching APPLICATION Motor control Battery management system Electric vehicle Unit mm OUTLINE DRAWING INTERNAL CIRCUIT _ _ _ 13 0.3 13 0.3 13 0.3 + + + 6 6 7 7 1 1 2 3 23 5 4 5 _ _ +

APTM50AM24SCG Phase leg VDSS = 500V Series & SiC parallel diodes RDSon = 24m typ @ Tj = 25 C ID = 150A @ Tc = 25 C MOSFET Power Module Application Motor control VBUS Switched Mode Power Supplies Uninterruptible Power Supplies Features Q1 Power MOS 7 MOSFETs G1 - Low RDSon OUT - Low input and Miller capacitance S1 - Low gate charge - Aval

APTC60DAM24CT1G VDSS = 600V Boost chopper RDSon = 24m max @ Tj = 25 C Super Junction MOSFET ID = 95A @ Tc = 25 C Power Module Application AC and DC motor control 5 6 11 Switched Mode Power Supplies Power Factor Correction Features CR1 - Ultra low RDSon 3 NTC - Low Miller capacitance 4 Q2 - Ultra low gate charge - Avalanche energy rated

APTC60AM24SCTG VDSS = 600V Phase leg RDSon = 24m max @ Tj = 25 C Series & SiC parallel diodes ID = 95A @ Tc = 25 C Super Junction MOSFET Power Module Application Motor control Switched Mode Power Supplies Uninterruptible Power Supplies NTC2 VBUS Features Q1 - Ultra low RDSon - Low Miller capacitance G1 - Ultra low gate charge OUT - Aval

M28 S TRANSISTOR(NPN) SOT 23 FEATURES Excellent hFE Linearity High DC Current Gain MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 40 V CBO 3. COLLECTOR V Collector-Emitter Voltage 20 V CEO VEBO Emitter-Base Voltage 6 V I Collector Current 1 A C P Collector Power Dissipation 200 mW

CEM2133 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -20V, -10A, RDS(ON) = 18m @VGS = -4.5V. RDS(ON) = 27m @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead-free plating ; RoHS compliant. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA =

CEM2182 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 20V, 9.3A, RDS(ON) = 18m @VGS = 4.5V. RDS(ON) = 24m @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead-free plating ; RoHS compliant. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25

CEM26138 Dual N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 7.6A, RDS(ON) = 22m @VGS = 10V. RDS(ON) = 33m @VGS = 4.5V. 20V, 6A, RDS(ON) = 27m @VGS = 4.5V. RDS(ON) = 40m @VGS = 2.5V. D1 D1 D2 D2 Super high dense cell design for extremely low RDS(ON). 8 7 6 5 High power and current handing capability. Lead-free plating ; RoHS compliant. Su

CEM2187 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -7.6A, RDS(ON) = 22m @VGS = -4.5V. RDS(ON) = 32m @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D1 D1 D2 D2 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unle

CEM2163 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -8.9A, RDS(ON) = 20m @VGS = -4.5V. RDS(ON) = 30m @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless oth

CEM2281 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -20V, -7.2A, RDS(ON) = 30m @VGS = -4.5V. RDS(ON) = 43m @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25

CEM2939 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 5 20V, 6.5A, RDS(ON) = 30m @VGS = 4.5V. RDS(ON) = 43m @VGS = 2.5V. -20V, -4.8A, RDS(ON) = 55m @VGS = -4.5V. RDS(ON) = 90m @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D2 High power and current handing capability. 8 7 6 5 Lead free product is acquired. Sur

CEM2401 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -6A, RDS(ON) = 44m @VGS = -4.5V. RDS(ON) = 65m @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless other

CEM2192 Dual N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 20V, 8A, RDS(ON) = 24m @VGS = 4.5V. RDS(ON) = 35m @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead-free plating ; RoHS compliant. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA

CEM2539 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES D1 D2 5 20V, 7.5A, RDS(ON) = 22m @VGS = 10V. RDS(ON) = 24m @VGS = 4.5V. *1K G1 G2 RDS(ON) = 33m @VGS = 2.5V. -20V, -4.0A, RDS(ON) = 80m @VGS = -10V. RDS(ON) = 100m @VGS = -4.5V. S1 S2 RDS(ON) = 150m @VGS = -2.5V. D1 D1 D2 D2 8 7 6 5 Super high dense cell design for extremely lo

CEM2539A Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES D1 D2 5 20V, 7.5A, RDS(ON) = 22m @VGS = 10V. RDS(ON) = 25m @VGS = 4.5V. G1 G2 RDS(ON) = 40m @VGS = 2.5V. -20V, -4A, RDS(ON) = 80m @VGS = -10V. RDS(ON) = 100m @VGS = -4.5V. S1 S2 RDS(ON) = 150m @VGS = -2.5V. D1 D1 D2 D2 8 7 6 5 Super high dense cell design for extremely low RDS(

CEM2407 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -5.3A, RDS(ON) = 45m @VGS = -4.5V. RDS(ON) = 65m @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D1 D1 D2 D2 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unle

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GMM28S FEATURES FEATURES FEATURES High hFE NPN silicon NPN MAXIMUM RATINGS (Ta=25 ) MAXIMUM RATINGS (Ta=25 ) MAXIMUM RATINGS (Ta=25 ) CHARACTERISTIC Symbol

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM2302 SOT-23 (SOT-23 Field Effect Transistors) N-Channel Enhancement-Mode MOS FETs N-Channel Enhancement-Mode MOS FETs N-Channel Enhancement-Mode MOS FET

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM2301 SOT-23 (SOT-23 Field Effect Transistors) P-Channel Enhancement-Mode MOS FETs P-Channel Enhancement-Mode MOS FETs P-Channel Enhancement-Mode MOS FET

WTM2222A NPN Epitaxial Planar Transistors SOT-89 P b Lead(Pb)-Free 1 2 1. BASE Features 3 2. COLLECTOR 3. EMITTER * Low Collector Saturation Voltage * High Speed Switching * For Complementary Use With PNP Type WTM2907A ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Symbol Limits Unit VCBO V Collector-Base Voltage 75 VCEO V Collector-Emitter Voltage 40 VEBO V Emitter-Base Vo

WTM2310A N-Channel Enhancement 3 DRAIN Mode Power MOSFET DRAIN CURRENT 5.0 AMPERES P b Lead(Pb)-Free DRAIN SOUCE VOLTAGE 1 60 VOLTAGE GATE Features 2 SOURCE * Simple Drive Requirement. * Super High Density Cell Design for Extremely Low RDS(ON). 1 2 3 1. GATE 2. DRAIN 3. SOURCE SOT-89 Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Symbol Value Unit VDS V D

WTM2907A PNP Epitaxial Planar Transistors SOT-89 P b Lead(Pb)-Free 1 2 1. BASE 3 2. COLLECTOR Features 3. EMITTER * Low Collector Saturation Voltage * High Spwwd Switching * For Complementary Use With NPN Type WTM2222A ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Symbol Limits Unit VCBO V Collector-Base Voltage -60 VCEO V Collector-Emitter Voltage -60 VEBO V Emitter-Base

WNM2046B WNM2046B Single N-Channel, 20V, 0.71A, Power MOSFET Http //www.sh-willsemi.com G VDS (V) Typical Rds(on) ( ) S 0.220@ VGS=4.5V D 20 0.260@ VGS=2.5V 0.315@ VGS=1.8V DFN1006-3L Descriptions The WNM2046B is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench D technology and design to provide excellent RDS (ON) with low gate charge. This device is suit

WPM2006 WPM2006 Power MOSFET and Schottky Diode Features Featuring a MOSFET and Schottky Diode Independent Pinout to each Device to Ease Circuit Design Ultra Low VF Schottky DFN2*2 -6L Applications Li--Ion Battery Charging High Side DC-DC Conversion Circuits High Side Drive for Small Brushless DC Motors Power Management in Portable, Battery Powered Products 1

WCM2079 WCM2079 N- and P-Channel Complementary, 20V,MOSFET http //www.sh-willsemi.com V (V) Typical R ( ) DS DS(on) N-Channel 0.020@V =10V GS 20 0.023@V =4.5V GS (4) (3) 0.028@V =-10V P-Channel GS (2) -20 0.035@V =-4.5V (1) GS SOP-8L Descriptions The WCM2079 is the N-Channel and P-Channel enhancement MOS Field Effect Transistor as a single package for DC-DC converter or le

WCM2007 WCM2007 N- and P-Channel, 20V, MOSFET Http //www.sh-willsemi.com V(BR)DSS RDS(on) Typical. ( ) 0.18@ 4.5V N-Channel 0.23@ 2.5V 20 V 0.30@ 1.8V ESD protection 0.45@-4.5V P-Channel 0.60@ -2.5V -20 V 0.75@ -1.8V SOT-563 ESD protection Descriptions D1 G2 S2 6 5 4 The WCM2007 is the N- and P-Channel enhancement MOS Field Effect Transistor as a singl

WPM2014 WPM2014 Single P-Channel, -20V, -4.9A, Power MOSFET Http// www.sh-willsemi.com VDS (V) Rds(on) ( ) 0.050 @ VGS= 4.5V -20 0.063 @ VGS= 2.5V 0.074 @ VGS = 1.8V DFN2x2-6L Descriptions D D S 6 5 4 The WPM2014 is P-Channel enhancement MOS D Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) S with low gate charge. This

WNM2046C WNM2046C Single N-Channel, 20V, 0.6A, Power MOSFET Http //www.willsemi.com G V (V) Typical R ( ) DS DS(on) S D 0.42 @ V =4.5V GS 20 0.58 @ V =2.5V GS 0.84 @ V =1.8V GS DFN1006-3L Descriptions D The WPM2046C is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS(ON) with low gate char

WNM2024 WNM2024 Single N-Channel, 20V, 3.9A, Power MOSFET Http //www.sh-willsemi.com VDS (V) Rds(on) ( ) 0.027@ VGS=4.5V 20 0.031@ VGS=2.5V 0.036@ VGS=1.8V SOT-23 Descriptions D 3 The WNM2024 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for us

WPM2048 WPM2048 Single P-Channel, -20V, -2.2A, Power MOSFET www.sh-willsemi.com VDS (V) Rds(on) (m ) 96@ VGS=-4.5V -20 135@ VGS=-2.5V SOT-23 Descriptions D 3 The WPM2048 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conver

WNM2046 WNM2046 Single N-Channel, 20V, 0.71A, Power MOSFET Http //www.sh-willsemi.com (1) (2) G VDS (V) Typical Rds(on) ( ) S 0.220@ VGS=4.5V (3) D 20 0.260@ VGS=2.5V 0.315@ VGS=1.8V DFN1006-3L Descriptions (3) The WNM2046 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench D technology and design to provide excellent RDS (ON) with low gate charge. Thi

WNM2072 WNM2072 Single N-Channel, 20V, 0.71A, Power MOSFET Http //www.sh-willsemi.com G VDS (V) Typical Rds(on) ( ) S 0.220@ VGS=4.5V D 20 0.260@ VGS=2.5V 0.315@ VGS=1.8V ESD Protected DFN1006-3L Descriptions The WNM2072 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench D technology and design to provide excellent RDS (ON) with low gate charge. This de

WPM2015 WPM2015 Http //www.sh-willsemi.com Single P-Channel, -20V, -2.4A, Power MOSFET VDS (V) Rds(on) ( ) 0.081@ VGS= 4.5V -20 0.103@ VGS= 2.5V SOT-23 Descriptions D 3 The WPM2015 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use 12 in DC-D

WPM2087 WPM2087 Single P-Channel, -20V, -4.3A, Power MOSFET Http //www.sh-willsemi.com VDS (V) Typical RDS(on) (m ) 34@ V =-4.5V GS -20 39 @ V =-3.1V GS 45 @ V =-2.5V GS SOT-23 Descriptions D 3 The WPM2087 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This dev

WPM2031 WPM2031 Single P-Channel, -20V, -0.65A, Power MOSFET Http //www.sh-willsemi.com VDS (V) Rds(on) ( ) 0.495@ VGS= 4.5V D -20 0.665@ VGS= 2.5V S 0.882@ VGS= 1.8V G ESD Protected SOT-723 Descriptions D The WPM2031 is P-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low

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WNM2030 WNM2030 Http //www.sh-willsemi.com Single N-Channel, 20V, 0.95A, Power MOSFET D VDS (V) Rds(on) ( ) 0.210@ VGS=4.5V S G 20 0.250@ VGS=2.5V SOT-723 0.305@ VGS=1.8V ESD Protected Descriptions D 3 The WNM2030 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) 1 2 with low gate ch

WPM2019 WPM2019 Http //www.sh-willsemi.com Single P-Channel, -20V, -0.73A, Power MOSFET VDS (V) Rds(on) ( ) D 0.480@ VGS= 4.5V -20 0.620@ VGS= 2.5V S 0.780@ VGS= 1.8V G SOT-523 Descriptions The WPM2019 is P-Channel enhancement MOS D 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is sui

WCM2001 WCM2001 N- and P-Channel Complementary, 20V, MOSFET Http //www.willsemi.com V(BR)DSS RDS(on) Typ. ( m ) 180 @ 4.5V N-Channel 225 @ 2.5V 20 V 280 @ 1.8V 85 @ -4.5V P-Channel 110 @ -2.5V -20 V 150 @ -1.8V D1 G2 S2 6 5 4 Descriptions The WCM2001 is the N- and P-Channel enhancement MOS Field Effect Transistor as a single 1 2 3 package for DC-DC converter or Lo

WPM2083 WPM2083 Single P-Channel, -20V, -2.4A, Power MOSFET Http //www.sh-willsemi.com VDS (V) Typical RDS(on) (m ) D D D D 81 @ VGS=-4.5V -20 S S S S 110 @ VGS=-2.5V G G G G SOT-23 Descriptions D 3 The WPM2083 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate char

WPM2037 WPM2037 Single P-Channel, -20V, -3.6A , Power MOSFET Http// www.willsemi.com VDS (V) Rds(on) ( ) 0.047@ VGS= 4.5V -20 0.060@ VGS= 2.5V 0.076@ VGS= 1.8V SOT-23-6L Descriptions S D D The WPM2037 is P-Channel enhancement MOS 6 5 4 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitabl

WPM2009D WPM2009D -20V, -4A, 42m , 2.0W, DFN3x3, P-MOSFET Http //www.willsemi.com Bottom Descriptions This single P-Channel MOSFET is produced using trench process that provides minimum on resistance performance. WPM2009D is enhancement power MOSFET with 2.0W power DFN3x3-8L dissipation mounting 1 in2 pad in a DFN3x3 package. This device is suited for high power charging cir

WPM2005B WPM2005B Power MOSFET and Schottky Diode Features DFN3 2-8L Featuring a MOSFET and Schottky Diode Independent Pinout to each Device to Ease Circuit Design Ultra Low VF Schottky Applications Li--Ion Battery Charging High Side DC-DC Conversion Circuits High Side Drive for Small Brushless DC Motors Power Management in Portable, Battery Powered Products MOS

WNM2020 WNM2020 Http //www.sh-willsemi.com N-Channel, 20V, 0.90A, Small Signal MOSFET VDS (V) Rds(on) ( ) D 0.220@ VGS=4.5V 20 0.260@ VGS=2.5V S 0.320@ VGS=1.8V G SOT-23 Descriptions The WNM2020 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) D with low gate charge. This device is suitable for

WCM2068 WCM2068 N- and P-Channel Complementary, 20V,MOSFET Http //www. sh- willsemi.com VDS (V) Typical RDS(on) ( ) 0.033@ VGS=4.5V N-Channel 0.037@ VGS=3.3V 20 0.041@ VGS=2.5V 0.085@VGS=- 4.5V P-Channel SOT-23-6L 0.097@VGS= -3.3V -20 0.110@VGS= -2.5V Descriptions The WCM2068 is the N-Channel and P-Channel enhancement MOS Field Effect Transistor as a single package for DC-DC

WPM2341 WPM2341 P-Channel Enhancement Mode Mosfet Http //www.sh-willsemi.com Features Higher Efficiency Extending Battery Life Miniature SOT23-3 Surface Mount Package 3 Super high density cell design for extremely low RDS (ON) 1 2 Applications DC/DC Converter Load Switch SOT 23-3 Battery Powered System LCD Display inverter Power Management in Porta

WNM2077 WNM2077 Single N-Channel, 20V, 0.54A, Power MOSFET Http// www.willsemi.com V (V) Rds(on) ( ) DS 0.420@ V =4.5V GS 20 0.580@ V =2.5V GS SOT-723 0.840@ V =1.8V GS ESD Protected Descriptions D 3 The WNM2077 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS (ON) 1 2 with low gate charge. This devi

WPM2049 WPM2049 Single P-Channel, -20V, -0.51A, Power MOSFET Http //www.sh-willsemi.com G VDS (V) Typical Rds(on) ( ) S 0.480@ VGS=-4.5V D -20 0.620@ VGS=-2.5V 0.780@ VGS=-1.8V DFN1006-3L Descriptions The WPM2049 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench D technology and design to provide excellent RDS (ON) with low gate charge. This device is s

WPM2065 WPM2065 Single P-Channel, -20V, -6.9A, Power MOSFET Http //www.sh-willsemi.com D D G V (V) Typical Rds(on) ( ) DS 0.017@ V =-4.5V GS D S -20 0.022@ V =-2.5V GS D D S 0.032@ V =-1.8V GS ESD Rating 4000V HBM DFN2X2-6L Descriptions 1 6 D The WPM2065 is P-Channel enhancement D MOS Field Effect Transistor. Uses advanced trench D 2 5 D technology and design to provi

WNM2016 WNM2016 Http //www.sh-willsemi.com N-Channel, 20V, 3.2A, Power MOSFET VDS (V) Typical RDS(on) (m ) D 40 @ VGS=4.5V S 20 47 @ VGS=2.5V 55 @ VGS=1.8V G SOT-23 D Descriptions 3 The WNM2016 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable

WNM2016A WNM2016A Single N-Channel, 20V, 4.7A, Power MOSFET Http //www.sh-willsemi.com V (V) Typical R (m ) DS DS(on) 33@ V =4.5V GS 39@ V =3.1V GS 20 44@ V =2.5V GS 66@ V =1.8V GS SOT-23 Description D 3 The WNM2016A is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS(ON) with low gate cha

WPM2341A WPM2341A P-Channel Enhancement Mode Mosfet Http //www.sh-willsemi.com Features Higher Efficiency Extending Battery Life Miniature SOT23-3 Surface Mount Package 3 Super high density cell design for extremely low RDS (ON) 1 2 Applications DC/DC Converter Load Switch SOT 23-3 Battery Powered System LCD Display inverter Power Management in Por

WPM2081 WPM2081 Single P-Channel, -20V, -3.2A, Power MOSFET Http //www.sh-willsemi.com VDS (V) Typical RDS(on) (m ) D D 43 @ VGS=-4.5V -20 S S 55 @ VGS=-2.5V G G SOT-23 Descriptions D The WPM2081 is P-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is

WPM2026 WPM2026 Single P-Channel, -20V, -3.2A, Power MOSFET Http //www.sh-willsemi.com VDS (V) Rds(on) ( ) 0.056@ VGS= 4.5V -20 0.069@ VGS= 2.5V 0.086@ VGS= 1.8V SOT-23 Descriptions D The WPM2026 is P-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitab

WNM2021 WNM2021 Http //www.sh-willsemi.com N-Channel, 20V, 0.89A, Small Signal MOSFET VDS (V) Rds(on) ( ) 0.220@ VGS=4.5V D 20 0.260@ VGS=2.5V S 0.320@ VGS=1.8V G SOT-323 Descriptions D The WNM2021 is N-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable

Spec. No. HE9520 HI-SINCERITY Issued Date 1997.06.18 Revised Date 2007.04.17 MICROELECTRONICS CORP. Page No. 1/4 HM2907A PNP EPITAXIAL PLANAR TRANSISTOR Description The HM2907A is designed for general purpose amplifier and high speed, medium-power switching applications. SOT-89 Features Low collector saturation voltage High speed switching For co

Spec. No. HE9521 HI-SINCERITY Issued Date 1997.06.18 Revised Date 2008.08.04 MICROELECTRONICS CORP. Page No. 1/5 HM2222A NPN EPITAXIAL PLANAR TRANSISTOR Description The HM2222A is designed for general purpose amplifier and high speed, medium-power switching applications. Features SOT-89 Low collector saturation voltage High speed switching For co

AOK50B65M2 TM 650V, 50A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 50A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.72V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencies

AOK30B65M2 TM 650V, 30A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 30A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.66V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencies

AOT10B65M2 TM 650V, 10A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest Alpha IGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 10A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.6V High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencies

AOK20B65M2 TM 650V, 20A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 20A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.7V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencies

AOTF5B65M2 TM 650V, 5A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 5A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.57V C) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficienci

AOTF15B65M2 TM 650V, 15A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT( IGBT) technology 650V 650V breakdown voltage IC (TC=100 15A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.7V C) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficienc

AOTF10B65M2 TM 650V, 10A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT( IGBT) technology 650V 650V breakdown voltage IC (TC=100 10A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.6V C) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencies

AOTF20B65M2 TM 650V, 20A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 20A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.7V C) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencie

Analog Power AM2321PE P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.079 @ VGS = -4.5V -4.1 -20 battery-powered product

Analog Power AM90N06-04m2B N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 4.2 @ VGS = 10V Low thermal impedance 60 90a 4.8 @ VGS = 4.5V Fast switching speed Typical Applications Automotive Systems DC/DC Conversion Circuits Battery Powered Power Tools ABSOLUTE MAXIMUM RATINGS

Analog Power AM20N10-250DE N-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m ) ID (A) ( rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 280 @ VG = 10V 11 S converters and power management in portable and 100 355 @ VG = 4.5V

Analog Power AM2392N N-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) ( ) VDS (V) ID(A) Low r trench technology DS(on) 1.2 @ VGS = 10V 0.9 Low thermal impedance 150 1.4 @ VGS = 5.5V 0.8 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU

Analog Power AM2320NE N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 18 @ VGS = 4.5V 7.0 Low thermal impedance 20 21 @ VGS = 2.5V 6.5 Fast switching speed SOT-23 Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUT

Analog Power AM20P10-250D P-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m( )ID (A) dissipation. Typical applications are DC-DC 295 @ VGS = -10V 11 converters and power management in portable and -100 battery-powered prod

Analog Power AM2308NE N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 60 @ VGS = 4.5V 3.5 Low thermal impedance 30 82 @ VGS = 2.5V 3.0 Fast switching speed Typical Applications Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIMUM RATINGS (TA

Analog Power AM20P06-135D P-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m( )ID (A) dissipation. Typical applications are DC-DC 135 @ VGS = -10V 16 converters and power management in portable and -60 battery-powered produc

Analog Power AM2391P P-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) ( ) VDS (V) ID(A) Low r trench technology DS(on) 1.2 @ VGS = -10V -0.9 Low thermal impedance -150 1.3 @ VGS = -4.5V -0.8 Fast switching speed Typical Applications PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost c

Analog Power AM2341P P - Channel 40V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low PRODUCT SUMMARY rDS(on) assures minimal power loss and conserves energy, making this device ideal VDS (V) rDS(on) ( )ID (A) for use in power management circuitry. 0.082 @ VGS = -10 V -3.2 Typical applications are lower voltage -40 application, power

Analog Power AM2305P P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 43 @ VGS = -4.5V -4.5 Low thermal impedance -20 54 @ VGS = -2.5V -4.1 Fast switching speed 120 @ VGS = -1.8V -2.7 Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Ci

Analog Power AM2314N N-Channel 20V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) PRODUCT SUMMARY assures minimal power loss and conserves VDS (V) rDS(on) ( )ID (A) energy, making this device ideal for use in 0.032 @ VGS = 4.5 V 4.6 power management circuitry. Typical 20 applications are power switch, power 0.044 @ VGS = 2.5V

Analog Power AM2339P P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 57 @ VGS = -4.5V -3.9 Low thermal impedance -30 89 @ VGS = -2.5V -3.2 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIM

Analog Power AM2313P P - Channel Logic Level MOSFET These miniature surface mount MOSFETs PRODUCT SUMMARY utilize High Cell Density process. Low VDS (V) rDS(on) ( )ID (A) rDS(on) assures minimal power loss and conserves energy, making this device ideal 10 @ VGS = -10 V -0.2 -60 for use in power management circuitry. 20 @ VGS = -4.5V -0.12 Typical applications are voltage contro

Analog Power AM2325P P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to PRODUCT SUMMARY provide low rDS(on) and to ensure minimal VDS (V) rDS(on) (OHM) ID (A) power loss and heat dissipation. Typical 0.055 @ VGS = -4.5V -3.6 applications are DC-DC converters and power management in portable and -20 0.089 @ VGS = -2.5V

Analog Power AM2306N N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m( )ID (A) minimal power loss and conserves energy, making this device ideal for use in power management 58 @ VGS = 10V 3.5 circuitry. Typical applications are PWMDC-DC 30 converters, power management in p

Analog Power AM20P02-60D P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARY minimal power loss and conserves energy, making VDS (V) rDS(on) m( )ID (A) this device ideal for use in power management circuitry. Typical applications are PWMDC-DC 59 @ VGS = -4.5V 24 -20 converters, power management in

Analog Power AM2300N N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs PRODUCT SUMMARY utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves VDS (V) rDS(on) ( )ID (A) energy, making this device ideal for use in 0.035 @ VGS = 4.5V 4.3 20 power management circuitry. Typical 0.050 @ VGS = 2.5V 3.5 applications are DC-DC converters,

Analog Power AM2344N N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 26 @ VGS = 10V 5.8 Low thermal impedance 40 35 @ VGS = 4.5V 5.0 Fast switching speed SOT-23 Typical Applications Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIMUM RATI

Analog Power AM2308N N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 60 @ VGS = 4.5V 3.8 Low thermal impedance 30 82 @ VGS = 2.5V 3.3 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

Analog Power AM2334NE N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 60 @ VGS = 4.5V 3.5 Low thermal impedance 30 82 @ VGS = 2.5V 3.0 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

Analog Power AM2398N N-Channel 60V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) PRODUCT SUMMARY assures minimal power loss and conserves VDS (V) rDS(on) ( )ID (A) energy, making this device ideal for use in 0.194 @ VGS = 10 V 2.2 power management circuitry. Typical 60 applications are power switch, power 0.273 @ VGS = 4.5V 1

Analog Power AM20P15-295D P-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 295 @ VGS = -10V -10.7 Low thermal impedance -150 580 @ VGS = -5.5V -7.6 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOL

Analog Power AM2305PE P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 43 @ VGS = -4.5V -4.5 Low thermal impedance -20 54 @ VGS = -2.5V -4.1 Fast switching speed 120 @ VGS = -1.8V -2.7 Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion C

Analog Power AM2314NE N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 32 @ VGS = 4.5V 5.3 Low thermal impedance 20 44 @ VGS = 2.5V 4.5 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

Analog Power AM2359PE P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 700 @ VGS = -10V -1.2 Low thermal impedance -60 800 @ VGS = -4.5V -1.1 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MA

Analog Power AM2303P P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY These miniature surface mount MOSFETs utilize a high cell density trench process to provide low VDS (V) rDS(on) (OHM) ID (A) rDS(on) and to ensure minimal power loss and heat 0.100 @ VGS = -4.5V -2.9 dissipation. Typical applications are DC-DC converters and power management in portable and -20 0.160 @ VGS = -2.5V -

Analog Power AM2328N N-Channel 20V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) PRODUCT SUMMARY assures minimal power loss and conserves VDS (V) rDS(on) ( )ID (A) energy, making this device ideal for use in 0.025 @ VGS = 4.5 V 5.9 power management circuitry. Typical 20 applications are power switch, power 0.035 @ VGS = 2.5V

Analog Power AM2340N N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 43 @ VGS = 10V 5.2 Low thermal impedance 40 64 @ VGS = 4.5V 3.7 Fast switching speed Typical Applications SOT-23 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE

Analog Power AM20P15-160D P-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 160 @ VGS = -10V -15 Low thermal impedance -150 173 @ VGS = -5.5V -14 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUT

Analog Power AM20N10-350D N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 420 @ VGS = 10V 9.0 Low thermal impedance 100 460 @ VGS = 5.5V 8.6 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE

Analog Power AM2345P P - Channel 40V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to PRODUCT SUMMARY provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical VDS (V) rDS(on) (O) ID (A) applications are DC-DC converters and 0.164 @ V = -10 V -3.2 GS power management in portable and -40 battery-powered pr

Analog Power AM2342N N-Channel 40-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m(O) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 86 @ V = 10V 5.2 GS converters and power management in portable and 40 battery-powered products s

Analog Power AM2343P P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 57 @ VGS = -10V -3.9 Low thermal impedance -30 89 @ VGS = -4.5V -3.2 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU

Analog Power AM2358N N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 92 @ VGS = 10V 3.1 Low thermal impedance 60 107 @ VGS = 4.5V 2.9 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

Analog Power AM20P03-60D P-Channel 32-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m( )ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 59 @ VGS = -10V 24 -32 battery-powered products s

Analog Power AM2307PE P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY rDS(on) (m ) VDS (V) ID(A) 31 @ VGS = -4.5V -5.2 Key Features 44 @ VGS = -2.5V -4.4 Low r trench technology DS(on) -20 56 @ VGS = -1.8V -3.9 Low thermal impedance 83 @ VGS = -1.5V -3.2 Fast switching speed Typical Applications White LED boost converters Automotive Systems Indust

Analog Power AM2394NE N-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 1200 @ VGS = 10V 0.9 Low thermal impedance 150 1300 @ VGS = 4.5V 0.8 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MA

Analog Power AM2328NE N-Channel 20V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ( )ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.022 @ VGS = 4.5 V 6.5 battery-powered products su

Analog Power AM20N10-115D N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 115 @ VGS = 10V 17 Low thermal impedance 100 135 @ VGS = 4.5V 16 Fast switching speed Typical Applications LED Inverter Circuits DC/DC Conversion Circuits Motor drives ABSOLUTE MAXIMUM RATINGS (TA = 2

Analog Power AM2302NE N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to PRODUCT SUMMARY provide low rDS(on) and to ensure minimal VDS (V) rDS(on) ( ) ID (A) power loss and heat dissipation. Typical applications are DC-DC converters and 0.076 @ VGS = 4.5V 3.4 20 power management in portable and 0.103 @ VGS = 2.5V 2

Analog Power AM20N15-250B N-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 200 @ VGS = 10V Low thermal impedance 150 21a 225 @ VGS = 5.5V Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIM

Analog Power AM2343PE P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 57 @ VGS = -10V -3.9 Low thermal impedance -30 89 @ VGS = -4.5V -3.2 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI

Analog Power AM2301P P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 130 @ VGS = -4.5V -2.6 Low thermal impedance -20 190 @ VGS = -2.5V -2.2 Fast switching speed SOT-23 Typical Applications Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLE

Analog Power AM2371P P-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) ( ) VDS (V) ID(A) Low r trench technology DS(on) 1.2 @ VGS = -10V -1 Low thermal impedance -100 1.3 @ VGS = -4.5V -0.9 Fast switching speed Typical Applications PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost converters

Analog Power AM2390N N-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) ( ) VDS (V) ID(A) Low r trench technology DS(on) 0.7 @ VGS = 10V 1.1 Low thermal impedance 150 1.2 @ VGS = 4.5V 0.8 Fast switching speed Typical Applications PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost conv

Analog Power AM2301PE P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.130 @ VGS = -4.5V -2.6 -20 battery-powered product

Analog Power AM2334N N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( )ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 60 @ VGS = 4.5V 3.5 converters and power management in portable and 30 battery-powered products s

Analog Power AM20N15-250D N-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 255 @ VGS = 10V 12 Low thermal impedance 150 290 @ VGS = 4.5V 11 Fast switching speed Typical Applications PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost

Analog Power AM2330NE N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m( )ID (A) dissipation. Typical applications are DC-DC 32 @ VGS = 10V 5.2 converters and power management in portable and 30 battery-powered products suc

Analog Power AM20N06-90I N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 94 @ VGS = 10V 19 Low thermal impedance 60 109 @ VGS = 4.5V 18 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU

Analog Power AM2345PE P - Channel 40V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to PRODUCT SUMMARY provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical VDS (V) rDS(on) ( )ID (A) applications are DC-DC converters and 0.164 @ VGS = -10 V -3.2 power management in portable and -40 battery-powered pr

Analog Power AM20N06-90D N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m( ) ID (A) minimal power loss and conserves energy, making this device ideal for use in power management 94 @ VGS = 10V 19 circuitry. Typical applications are PWMDC-DC 60 109 @ VGS = 4.5V 18 converters

Analog Power AM2310N N-Channel Logic Level MOSFET These miniature surface mount MOSFETs PRODUCT SUMMARY utilize High Cell Density process. Low rDS(on) assures minimal power loss and VDS (V) rDS(on) ( )ID (A) conserves energy, making this device ideal 0.065 @ VGS = 4.5V 2.2 for use in power management circuitry. 30 0.082 @ VGS = 2.5V 2.0 Typical applications are lower voltage

Analog Power AM20N20-125D N-Channel 200-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 260 @ VGS = 10V 12 converters and power management in portable and 200 300 @ VGS = 5.5V 11

Analog Power AM2360N N-Channel 55V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ( ) ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.160 @ VGS = 4.5 V 2.4 battery-powered products su

Analog Power AM20P06-175I P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 175 @ VGS = -10V -14 Low thermal impedance -60 200 @ VGS = -4.5V -13 Fast switching speed Typical Applications TO-251 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits

Analog Power AM2336N N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 32 @ VGS = 4.5V 5.3 Low thermal impedance 30 64 @ VGS = 2.5V 3.7 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

Analog Power AM2337P P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 112 @ VGS = -4.5V -2.8 Low thermal impedance -30 172 @ VGS = -2.5V -2.3 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAX

Analog Power AM2359P P-Channel -60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 381 @ VGS = -10V -1.6 Low thermal impedance -60 561 @ VGS = -4.5V -1.3 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAX

Analog Power AM20N10-250D N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 280 @ VGS = 10V 11 Low thermal impedance 100 355 @ VGS = 4.5V 10 Fast switching speed Typical Applications PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost

Analog Power AM2304N N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 12 @ VGS = 10V 8.5 Low thermal impedance 30 18 @ VGS = 4.5V 7.0 Fast switching speed Typical Applications Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIMUM RATINGS (TA =

Analog Power AM2374N N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 92 @ VGS = 10V 3.1 Low thermal impedance 100 99 @ VGS = 4.5V 3.0 Fast switching speed Typical Applications SOT-23 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE

Analog Power AM25P03-60D P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARY minimal power loss and conserves energy, making VDS (V) rDS(on) m( )ID (A) this device ideal for use in power management circuitry. Typical applications are PWMDC-DC 59 @ VGS = -4.5V 24 -26.5 converters, power management

Analog Power AM20P02-99D P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARY minimal power loss and conserves energy, making VDS (V) rDS(on) (m )ID (A) this device ideal for use in power management circuitry. Typical applications are PWMDC-DC 118 @ VGS = -4.5V 17 -20 converters, power management i

Analog Power AM2324N N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY These miniature surface mount MOSFETs utilize a high cell density trench process to VDS (V) rDS(on) ( ) ID (A) provide low rDS(on) and to ensure minimal 0.047 @ VGS = 4.5V 4.3 power loss and heat dissipation. Typical 20 0.055@ VGS = 2.5V 4.0 applications are DC-DC converters and power management in portable and

Analog Power AM2361P P-Channel -60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 210 @ VGS = -10V -3.4 Low thermal impedance -60 250 @ VGS = -4.5V -2.8 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAX

Analog Power AM2362N N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 27 @ VGS = 10V 5.7 Low thermal impedance 60 33 @ VGS = 4.5V 5.2 Fast switching speed Typical Applications SOT-23 DC/DC Conversion Circuits Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)

Analog Power AM2319P P - Channel Logic Level MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low PRODUCT SUMMARY rDS(on) assures minimal power loss and VDS (V) rDS(on) ( )ID (A) conserves energy, making this device ideal for use in power management circuitry. 0.20 @ VGS = -10 V -2.1 -30 Typical applications are voltage control 0.30 @ VGS = -4.

Analog Power AM2318N N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 160 @ VGS = 10V 2.4 Low thermal impedance 30 250 @ VGS = 4.5V 1.9 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU

Analog Power AM2381P P-Channel 80-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 800 @ VGS = -10V -1.1 Low thermal impedance -80 900 @ VGS = -4.5V -1.0 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI

Analog Power AM2327P P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) (OHM) ID (A) minimal power loss and conserves energy, making this device ideal for use in power management 0.052 @ VGS = -4.5V -3.6 circuitry. Typical applications are DC-DC converters, power management in po

Analog Power AM2370N N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 280 @ VGS = 10V 1.5 Low thermal impedance 100 355 @ VGS = 4.5V 1.3 Fast switching speed Typical Applications PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost con

Analog Power AM2398NE N-Channel 60V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ( )ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.194 @ VGS = 10 V 2.2 battery-powered products suc

Analog Power AM2373P P-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) ( ) VDS (V) ID (A) Low r trench technology DS(on) 6 @ VGS = -10V -0.39 Low thermal impedance -100 6.5 @ VGS = -4.5V -0.37 Fast switching speed Typical Applications PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost

Analog Power AM20N10-130D N-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 130 @ VGS = 10V 17 converters and power management in portable and 100 160 @ VGS = 4.5V 15

Analog Power AM2329P P-Channel 30V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) PRODUCT SUMMARY assures minimal power loss and conserves VDS (V) rDS(on) ( )ID (A) energy, making this device ideal for use in 0.112 @ VGS = 10 V 2.5 power management circuitry. Typical -30 applications are power switch, power 0.172 @ VGS = 4.5V

Analog Power AM20P03-60I P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARY minimal power loss and conserves energy, making VDS (V) rDS(on) m( )ID (A) this device ideal for use in power management circuitry. Typical applications are PWMDC-DC 59 @ VGS = -10V 24 -30 converters, power management in

Analog Power AM2302N N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 76 @ VGS = 4.5V 3.4 Low thermal impedance 20 103 @ VGS = 2.5V 3.0 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

Analog Power AM2323P P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY These miniature surface mount MOSFETs utilize a high cell density trench process to provide low VDS (V) rDS(on) (OHM) ID (A) rDS(on) and to ensure minimal power loss and heat 0.100 @ VGS = -4.5V -2.9 dissipation. Typical applications are DC-DC converters and power management in portable and -20 0.160 @ VGS = -2.5V -

Analog Power AM2322N N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC VDS (V) rDS(on) ( )ID (A) converters and power management in portable and 0.085 @ VGS = 10V 2.5 battery-powered products such

Analog Power AM2326N N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs PRODUCT SUMMARY utilize High Cell Density process. Low VDS (V) rDS(on) ( )ID (A) rDS(on) assures minimal power loss and 0.070 @ VGS = 4.5V 2.2 conserves energy, making this device ideal for use in power management circuitry. 20 0.080@ VGS = 2.5V 2.0 Typical applications are DC-DC 0.120@ VG

Analog Power AM2347P P-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 39 @ VGS = -10V -4.8 Low thermal impedance -40 55 @ VGS = -4.5V -4.0 Fast switching speed SOT-23 Typical Applications Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS

Analog Power AM20P04-60D P-Channel 40-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m( )ID (A) dissipation. Typical applications are DC-DC 69 @ VGS = -10V 22 converters and power management in portable and -40 battery-powered products

Analog Power AM2317P P - Channel Logic Level MOSFET These miniature surface mount MOSFETs PRODUCT SUMMARY utilize a high cell density trench process to VDS (V) rDS(on) ( ) ID (A) provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical 0.30 @ VGS = -10 V -1.0 -30 applications are DC-DC converters and 0.50 @ VGS = -4.5V -0.9 power management in portable

Analog Power AM2372N N-Channel 100V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ( ) ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 2 @ VGS = 10 V 0.7 battery-powered products such a

Analog Power AM2340NE N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY These miniature surface mount MOSFETs utilize a high cell density trench process to provide low VDS (V) rDS(on) m( )ID (A) rDS(on) and to ensure minimal power loss and heat 43 @ VGS = 10V 5.2 dissipation. Typical applications are DC-DC converters and power management in portable and 40 50 @ VGS = 4.5V 4.2 batter

Analog Power AM2342NE N-Channel 40-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( )ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 86 @ VGS = 10V 5.2 converters and power management in portable and 40 battery-powered products s

Analog Power AM2330N N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m( ) ID (A) dissipation. Typical applications are DC-DC 32 @ VGS = 10V 5.2 converters and power management in portable and 30 battery-powered products suc

Analog Power AM2321P P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 79 @ VGS = -4.5V -4.1 Low thermal impedance -20 110 @ VGS = -2.5V -3.3 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI

Analog Power AM2358NE N-Channel 60V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ( )ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.092 @ VGS = 10 V 3.1 battery-powered products suc

Analog Power AM2332N N-Channel 20V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ( )ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.058 @ VGS = 4.5 V 4.7 battery-powered products suc

Analog Power AM2306NE N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m( )ID (A) minimal power loss and conserves energy, making this device ideal for use in power management 58 @ VGS = 10V 3.5 circuitry. Typical applications are PWMDC-DC 30 converters, power management in

Analog Power AM20N10-180D N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 180 @ VGS = 10V 14 Low thermal impedance 100 190 @ VGS = 4.5V 13 Fast switching speed Typical Applications LED Inverter Circuits DC/DC Conversion Circuits Motor drives ABSOLUTE MAXIMUM RATINGS (TA = 2

Analog Power AM2312N N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 10 @ VGS = 4.5V 9.4 Low thermal impedance 20 13 @ VGS = 2.5V 8.2 Fast switching speed Typical Applications SOT-23 Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIMUM RATIN

Shenzhen Tuofeng Semiconductor Technology Co., Ltd APM2317 P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-4.5A , RDS(ON)=28m (typ.) @ VGS=-4.5V RDS(ON)=38m (typ.) @ VGS=-2.5V RDS(ON)=55m (typ.) @ VGS=-1.8V Super High Dense Cell Design Reliable and Rugged S Lead Free and Green Devices Available (RoHS Compliant) Applications G Power Management

APM2510NU N-Channel Enhancement Mode MOSFET Features Pin Description 25V/50A, RDS(ON)=8.5m (typ.) @ VGS=10V G D RDS(ON)=15m (typ.) @ VGS=4.5V S Super High Dense Cell Design Avalanche Rated Top View of TO-252 Reliable and Rugged D Lead Free and Green Devices Available (RoHS Compliant) Applications G Power Management in Desktop Computer or DC/DC Converters S N-Ch

APM2054N N-Channel Enhancement Mode MOSFET Features Pin Description 20V/12A, RDS(ON)=35m (typ.) @ VGS=10V RDS(ON)=45m (typ.) @ VGS=4.5V RDS(ON)=110m (typ.) @ VGS=2.5V 1 2 3 1 2 3 Super High Dense Cell Design High Power and Current Handling Capability G D S G D S TO-252, SOT-89 and SOT-223 Packages To

APM2556NU N-Channel Enhancement Mode MOSFET Features Pin Description 25V/60A, RDS(ON)=4.5m (typ.) @ VGS=10V G D RDS(ON)=7.5m (typ.) @ VGS=4.5V Super High Dense Cell Design S Reliable and Rugged Top View of TO-252 Lead Free and Green Devices Available D (RoHS Compliant) Applications G Power Management in Desktop Computer or DC/DC Converters S N-Channel MOSFET

APM2509NU N-Channel Enhancement Mode MOSFET Features Pin Description 25V/50A , RDS(ON)=7.5m (typ.) @ VGS=10V RDS(ON)=13m (typ.) @ VGS=4.5V Super High Dense Cell Design Avalanche Rated Top View of TO-252 Reliable and Rugged D Lead Free Available (RoHS Compliant) Applications G Power Management in Desktop Computer or DC/DC Converters S N-Channel MOSFET Orderi

APM2014N N-Channel Enhancement Mode MOSFET Features Pin Description 20V/30A , RDS(ON)=12m (typ.) @ VGS=4.5V RDS(ON)=18m (typ.) @ VGS=2.5V Super High Dense Cell Design for Extremely Low RDS(ON) 1 2 3 Reliable and Rugged TO-252 Package G D S Top View of TO-252 Applications Power Management in Comput

APM2071PD P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-4A, RDS(ON)=50m (typ.) @ VGS=-4.5V G RDS(ON)=75m (typ.) @ VGS=-2.5V D S Super High Dense Cell Design Top View of SOT-89 Reliable and Rugged (2) Lead Free and Green Devices Available D (RoHS Compliant) Applications (1) G DC/DC Converters S (3) P-Channel MOSFET Ordering and Marki

APM2318A N-Channel Enhancement Mode MOSFET Features Pin Description 30V/3A , D RDS(ON)=35m (typ.) @ VGS=10V RDS(ON)=40m (typ.) @ VGS=4.5V G RDS(ON)=60m (typ.) @ VGS=2.5V S Super High Dense Cell Design Top View of SOT-23 Reliable and Rugged Lead Free Available (RoHS Compliant) D Applications G Power Management in

APM2030N N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A , RDS(ON)=35m (typ.) @ VGS=4.5V RDS(ON)=38m (typ.) @ VGS=2.5V Super High Dense Cell Design for Extremely Low RDS(ON) 1 2 3 Reliable and Rugged TO-252 Package G D S Top View of TO-252 Applications Power Management in Computer

APM2513NU N-Channel Enhancement Mode MOSFET Features Pin Description 25V/40A, RDS(ON)=10.5m (typ.) @ VGS=10V G D RDS(ON)=16m (typ.) @ VGS=4.5V Super High Dense Cell Design S Avalanche Rated Top View of TO-252 Reliable and Rugged D Lead Free and Green Devices Available (RoHS Compliant) G Applications Power Management in Desktop Computer or S DC/DC Converters N-Cha

GOFORD XM2N200. D Description The XM2N200.uses advanced trench technology and G design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features S Schematic diagram VDSS RDS(ON) ID @ 10V (typ) 190V 356.6m 2A High density cell design for ultra low Rdson Fully characterized avalanche voltage an

Green Product STM201N a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Typ VDSS ID Rugged and reliable. 110 @ VGS=10V Suface Mount Package. 100V 4A 170 @ VGS=4.5V S O-8 1 C (TA=25 unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Sym

SSFM2506 Main Product Characteristics VDSS 25V RDS(on) 4.1mohm(typ.) ID 60A Sch emati c di ag ram TO-252 (D-PAK) Mar ki ng a nd pin Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and revers

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors M28S TRANSISTOR (NPN) FEATURES Power dissipation Pcm 0.625W Tamb=25 MARKING 28S MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units

M28M(BR3DG28M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features High IC,, high hFE. / Applications Use in audio output driver stage amplifier applications. /

SEMICONDUCTOR 5. Small temperature dependence of the turn-off switching loss 48.5 25 25 C2E1 E2 C1 3-M6 93+0.3 4- 6.5 108+0.5 14 14 14 2.8 4-0.5 All dimensions in millimeters 27 15 17.8 48+0.3 62.5+0.5 G1 E1 E2 G2 30.9 30.5 22.5 SEMICONDUCTOR SEMICONDUCTOR SEMICONDUCTOR SEMICONDUCTOR SEMICONDUCTOR

SM2607CSC Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 20V/5A, D2 RDS(ON)=38m (max.) @ VGS=4.5V S1 D1 G2 RDS(ON)=54m (max.) @ VGS=2.5V S2 G1 RDS(ON)=85m (max.) @ VGS=1.8V P-Channel Top View of SOT-23-6 -20V/-3.3A, RDS(ON)=85m (max.) @ VGS=-4.5V (4)D2 (6)D1 RDS(ON)=120m (max.) @ VGS=-2.5V RDS(ON)=210m (max.)

SM2217PSQG P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-9.9A, S D RDS(ON) = 17m (max.) @ VGS =-4.5V D D RDS(ON) = 25m (max.) @ VGS =-2.5V RDS(ON) = 40m (max.) @ VGS =-1.8V G S Pin 1 D D Reliable and Rugged DFN2x2-6 Lead Free and Green Devices Available (RoHS Compliant) (1,2,5,6) DDDD HBM ESD protection level pass 2KV Note The diode connec

SM2014NSU N-Channel Enhancement Mode MOSFET Features Pin Description 20V/13.8A, D RDS(ON)= 19.5m (max.) @ VGS=4.5V S RDS(ON)= 27m (max.) @ VGS=2.5V G Reliable and Rugged Lead Free and Green Devices Available Top View of TO-252-3 (RoHS Compliant) ESD Protection. D (2) Applications G (1) Power Management in Notebook Computer, Portable Equipment and Battery Powered Syste

SM2518NSUC N-Channel Enhancement Mode MOSFET Features Pin Description 25V/50A, RDS(ON)=9.5m (max.) @ VGS=10V RDS(ON)=14.5m (max.) @ VGS=4.5V S D Reliable and Rugged G Avalanche Rated Lead Free and Green Devices Available Top View of TO-251S (RoHS Compliant) D 100% UIS + Rg Tested G Applications Power Management in Desktop Computer or DC/DC Converters. S N-Channel

SM2337PSA P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-5.5A, RDS(ON) = 34m (max.) @ VGS =-4.5V D RDS(ON) = 50m (max.) @ VGS =-2.5V S RDS(ON) = 75m (max.) @ VGS =-1.8V G Reliable and Rugged Top View of SOT-23-3 Lead Free and Green Devices Available (RoHS Compliant) HBM ESD protection level pass 2KV D Note The diode connected between the gate and sour

SM2690NSC N-Channel Enhancement Mode MOSFET Features Pin Description 150V/1.6A, S D RDS(ON)= 360m (max.) @ VGS=10V D G Reliable and Rugged D D Lead Free and Green Devices Available (RoHS Compliant) Top View of SOT-23-6 ESD Protection (1,2,5,6) DDDD Applications (3)G For POE Power Primary Side Switch for Low Power DC/DC Converters. (4)S N-Channel MOSFET Orderin

SM2603PSC P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-4.3A, S RDS(ON)= 48m (max.) @ VGS=-4.5V D D RDS(ON)= 68m (max.) @ VGS=-2.5V G D RDS(ON)= 100m (max.) @ VGS=-1.8V D Reliable and Rugged Top View of SOT-23-6 Lead Free and Green Devices Available (RoHS Compliant) (1,2,5,6) DD DD Applications Power Management in Notebook Computer, Portable Equip

SM2A18DSK Dual N-Channel Enhancement Mode MOSFET Features Pin Description D1 D1 D2 200V/0.9A, D2 RDS(ON)= 1140m (max.) @ VGS= 10V RDS(ON)= 1300m (max.) @ VGS= 4.5V S1 G1 ESD protected S2 G2 100% UIS + Rg Tested Top View of SOP-8 Reliable and Rugged Lead Free and Green Devices Available D1 D1 D2 D2 (RoHS Compliant) Applications G1 G2 Power Management in D

SM2421PSAN P-Channel Enhancement Mode MOSFET Features Pin Description D -30V/-4.8A, RDS(ON)= 56m (Max.) @ VGS=-10V S RDS(ON)= 68m (Max.) @ VGS=-4.5V G RDS(ON)= 94m (Max.) @ VGS=-2.5V Super High Dense Cell Design Top View of SOT-23N Reliable and Rugged S Lead Free and Green Devices Available (RoHS Compliant) Applications G Power Management in Notebook Comp

APM2304A N-Channel Enhancement Mode MOSFET Features Pin Description 30V/5A, D RDS(ON)= 22m (typ.) @ VGS= 10V S RDS(ON)= 32m (typ.) @ VGS= 4.5V G Super High Dense Cell Design Top View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices Available D (RoHS Compliant) Applications G Power Management in Notebook Computer, Portable Equipment and Battery Power

SM2306NSA N-Channel Enhancement Mode MOSFET Features Pin Description 30V/4.7A, D RDS(ON)=40m (max.) @ VGS=10V S RDS(ON)=60m (max.) @ VGS=4.5V G Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23-3 (RoHS Compliant) D Applications G Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. S Load Switch N-Chann

SM2F04NSU N-Channel Enhancement Mode MOSFET Features Pin Description 250V/10A, D RDS(ON)= 300m (Max.) @ VGS=10V S Reliable and Rugged G Lead Free and Green Devices Available (RoHS Compliant) Top View of TO-252-3 D Applications G Power Management in TV Inverter. S N-Channel MOSFET Ordering and Marking Information Package Code SM2F04NS U TO-252-3 Assembly

SM2202NSQE N-Channel Enhancement Mode MOSFET Features Pin Description S D 30V/8.4A, D D RDS(ON) = 15.5m (max.) @ VGS =10V RDS(ON) = 21m (max.) @ VGS =4.5V G S D Pin 1 D Avalanche Rated TDFN2x2-6 Reliable and Rugged Lead Free and Green Devices Available (1,2,5,6) DD DD (RoHS Compliant) 100% UIS Tested Applications (3)G Power Management in Notebook Computer,

SM2326NSAN N-Channel Enhancement Mode MOSFET Features Pin Description 20V/3A, D RDS(ON)= 70m (max.) @ VGS= 4.5V S RDS(ON)= 90m (max.) @ VGS= 2.5V G RDS(ON)= 110m (max.) @ VGS= 1.8V Top View of SOT-23N Reliable and Rugged Lead Free and Green Devices Available D (RoHS Compliant) G Applications Power Management in DC/AC Inverter Systems S DC-DC Converter

SM2F05NSU N-Channel Enhancement Mode MOSFET Features Pin Description 250V/7.4A, D RDS(ON)= 390m (Max.) @ VGS=10V S 100% UIS + Rg Tested G Reliable and Rugged Top View of TO-252-2 Lead Free and Green Devices Available (RoHS Compliant) D Applications G Power Management in TV Inverter. S N-Channel MOSFET Ordering and Marking Information Package Code SM2F05NS U TO

SM2319PSAN P-Channel Enhancement Mode MOSFET Features Pin Description -40V/-3A, D RDS(ON)= 80m (max.) @ VGS= -10V S RDS(ON)= 120m (max.) @ VGS= -4.5V G Reliable and Rugged Top View of SOT-23N Lead Free and Green Devices Available (RoHS Compliant) D Applications G Load Switch. DC/DC Converter. S P-Channel MOSFET Ordering and Marking Information Package

SM2207PSQG P-Channel Enhancement Mode MOSFET Features Pin Description -12V/-8.7A, S D D D RDS(ON) = 22m (max.) @ VGS =-4.5V RDS(ON) = 30m (max.) @ VGS =-2.5V G S Pin 1 RDS(ON) = 38m (max.) @ VGS =-1.8V D D RDS(ON) = 57m (max.) @ VGS =-1.5V DFN2x2-6 Reliable and Rugged (1,2,5,6) Lead Free and Green Devices Available DD DD (RoHS Compliant) Applications (3)G

SM2327PSA P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-4A, D RDS(ON)=56m (max.) @ VGS=-10V S RDS(ON)=70m (max.) @ VGS=-4.5V G RDS(ON)=100m (max.) @ VGS=-2.5V Top View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices Available D (RoHS Compliant) G Applications Power Management in LCD TV, Monitor, S Notebook Computer, Portable Equipment and

SM2317PSA P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-4.6A , D RDS(ON)= 48m (Max.) @ VGS=-4.5V S RDS(ON)= 70m (Max.) @ VGS=-2.5V G RDS(ON)=110m (Max.) @ VGS=-1.8V Top View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) D Applications G Power Management in Notebook Computer, Portable Equipment and Battery Powe

SM2A06NSFP N-Channel Enhancement Mode MOSFET Features Pin Description 200V/15A, RDS(ON)=140m (max.) @ VGS=10V Reliable and Rugged S D G Lead Free and Green Devices Available (RoHS Compliant) Top View of TO-220FP D Applications High Current Switching. G Uninterruptible Power Supply. Inverter Systems. Display & Lighting Equipment. S N-Channel MOSFET Ordering and Mar

SM2210NSQG N-Channel Enhancement Mode MOSFET Features Pin Description S D 12V/12A, D D RDS(ON) = 4.3m (max.) @ VGS =4.5V RDS(ON) = 5.6m (max.) @ VGS =2.5V G S Pin 1 D D 100% UIS + Rg Tested DFN2x2A-6_EP Reliable and Rugged Lead Free and Green Devices Available (1,2,5,6) DDDD (RoHS Compliant) Applications (3)G Battery Management Application. Power Management Fu

SM2602NSC N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6.2A, S D RDS(ON)= 24m (max.) @ VGS=4.5V D G RDS(ON)= 32m (max.) @ VGS=2.5V D D Reliable and Rugged Top View of SOT-23-6 Lead Free and Green Devices Available (RoHS Compliant) (1,2,5,6) DD DD Applications (3)G Power Management in Notebook Computer, Portable Equipment and Battery Powered System

APM2558NU N-Channel Enhancement Mode MOSFET Features Pin Description 25V/60A, D RDS(ON)=4.5m (Typ.) @ VGS=10V S RDS(ON)=7.5m (Typ.) @ VGS=4.5V G Reliable and Rugged Avalanche Rated Top View of TO-252-3 Lead Free and Green Devices Available D (RoHS Compliant) Applications G Power Management in Desktop Computer or DC/DC Converters. S N-Channel MOSFET Ordering and Mar

SM2329PSA P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-3.3A, D RDS(ON)= 85m (Max.) @ VGS=-4.5V S RDS(ON)= 120m (Max.) @ VGS=-2.5V G RDS(ON)= 210m (Max.) @ VGS=-1.8V Top View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices Available D (RoHS Compliant) G Applications Power Management in Notebook Computer, Portable Equipment and Battery Powe

SM2403PSAN P-Channel Enhancement Mode MOSFET Features Pin Description D -20V/-3.3A, S RDS(ON)= 90m (Max.) @ VGS=-4.5V G RDS(ON)= 135m (Max.) @ VGS=-2.5V RDS(ON)= 240m (Max.) @ VGS=-1.8V Top View of SOT-23N Reliable and Rugged Lead Free and Green Devices Available D (RoHS Compliant) G Applications Load switch. For Portable Equipment. S For Networking application. P

SM2030NSU N-Channel Enhancement Mode MOSFET Features Pin Description Drain 4 20V/30A, RDS(ON)= 20.5m (Max.) @ VGS=4.5V 3 Source 2 RDS(ON)= 29m (Max.) @ VGS=2.5V 1 Gate Reliable and Rugged Lead Free and Green Devices Available Top View of TO-252 (RoHS Compliant) D Applications G Power Management in Desktop Computer or DC/DC Converters. S N-Channel MOSFET Ordering

SM2558NSUC N-Channel Enhancement Mode MOSFET Features Pin Description 25V/60A, RDS(ON)=5.2m (max.) @ VGS=10V S RDS(ON)=9.5m (max.) @ VGS=4.5V D G Reliable and Rugged Avalanche Rated Top View of TO-251 Lead Free and Green Devices Available (RoHS Compliant) D Applications G Power Management in Desktop Computer or DC/DC Converters. S N-Channel MOSFET Ordering and Mar

SM2A12NSU N-Channel Enhancement Mode MOSFET Features Pin Description 200V/25A, D RDS(ON)= 70m (max.) @ VGS= 10V S 100% UIS + Rg Tested G Reliable and Rugged Lead Free and Green Devices Available Top View of TO-252-2 (RoHS Compliant) D G Applications Power Management in TV Converter. S DC-DC Converter. N-Channel MOSFET Ordering and Marking Information Package C

APM2317A P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-4.5A , D RDS(ON)=28m (typ.) @ VGS=-4.5V S RDS(ON)=38m (typ.) @ VGS=-2.5V G RDS(ON)=55m (typ.) @ VGS=-1.8V Top View of SOT-23-3 Super High Dense Cell Design Reliable and Rugged S Lead Free and Green Devices Available (RoHS Compliant) Applications G Power Management in Notebook Com

SM2201NSQG N-Channel Enhancement Mode MOSFET Features Pin Description S D 30V/10.2A, D D RDS(ON) = 10.5m (max.) @ VGS =10V RDS(ON) = 14m (max.) @ VGS =4.5V G S D Pin 1 D Reliable and Rugged DFN2x2-6 Lead Free and Green Devices Available (RoHS Compliant) (1,2,5,6) DD DD 100% UIS Tested Applications (3)G Power Management in Notebook Computer, (4)S Portable

SM2A16NSF/SM2A16NSFP N-Channel Enhancement Mode MOSFET Features Pin Description 200V/15A, RDS(ON)=156m (max.) @ VGS=10V Reliable and Rugged S S Lead Free and Green Devices Available D D G G (RoHS Compliant) Top View of TO-220FP Top View of TO-220 100% UIS + Rg Tested D Applications Power Management in TV Inverter. G S N-Channel MOSFET Ordering and Marking Infor

SM2321PSA P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-4.3A , D RDS(ON)= 56m (Max.) @ VGS=-10V S RDS(ON)= 68m (Max.) @ VGS=-4.5V G RDS(ON)= 94m (Max.) @ VGS=-2.5V Top View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices Available D (RoHS Compliant) G Applications Power Management in Notebook Computer, Portable Equipment and Battery Powe

SM2204NSQG N-Channel Enhancement Mode MOSFET Features Pin Description S D 30V/7A, D D RDS(ON) = 23m (max.) @ VGS =10V RDS(ON) = 31.5m (max.) @ VGS =4.5V G S D Pin 1 D Avalanche Rated DFN2x2-6 Reliable and Rugged Lead Free and Green Devices Available (1,2,5,6) DDDD (RoHS Compliant) 100% UIS Tested Applications (3)G Load Switch HDD (4)S DC/DC Converter N

SM2610NSC N-Channel Enhancement Mode MOSFET Features Pin Description 30V/6.6A, S D RDS(ON)= 21m (max.) @ VGS=10V D G RDS(ON)= 27m (max.) @ VGS=4.5V D D Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23-6 (RoHS Compliant) (1,2,5,6) DD DD Applications Power Management in Notebook Computer, (3)G Portable Equipment and Battery Powered Sys

SM2612NSC N-Channel Enhancement Mode MOSFET Features Pin Description 30V/5.5A, S D RDS(ON)= 26.5m (max.) @ VGS=10V D G RDS(ON)= 35m (max.) @ VGS=4.5V D D Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23-6 (RoHS Compliant) (1,2,5,6) DDDD Applications Power Management in Notebook Computer, (3)G Portable Equipment and Battery Powered Sy

SM2302NSA N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A, D RDS(ON)= 26m (max.) @ VGS=4.5V S RDS(ON)= 37m (max.) @ VGS=2.5V G ESD Protected Reliable and Rugged Top View of SOT-23-3 Lead Free and Green Devices Available D (RoHS Compliant) G Applications Power Management in Notebook Computer, Portable Equipment and Battery Powered S Systems. N-Chan

SM2601PSC P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-7.3A , S D RDS(ON)=26m (Max.) @ VGS=-4.5V D G D RDS(ON)=38m (Max.) @ VGS=-2.5V D RDS(ON)=58m (Max.) @ VGS=-1.8V Top View of SOT-23-6 Reliable and Rugged Lead Free and Green Devices Available (1,2,5,6) (RoHS Compliant) DD DD Applications (3)G Power Management in Notebook Computer,

SM2225NSQG N-Channel Enhancement Mode MOSFET Features Pin Description S D 100V/2.7A, D D RDS(ON)= 156m (max.) @ VGS=10V RDS(ON)= 176m (max.) @ VGS=4.5V G S D Pin 1 D ESD Protection DFN2x2A-6_EP 100% UIS + Rg Tested Reliable and Rugged (1,2,5,6) DDDD Lead Free and Green Devices Available (RoHS Compliant) Applications (3)G For POE Power Primary Side Switch for

SM2A06NSU N-Channel Enhancement Mode MOSFET Features Pin Description 200V/18A, D RDS(ON)=140m (max.) @ VGS=10V S Reliable and Rugged G Lead Free and Green Devices Available (RoHS Compliant) Top View of TO-252 D Applications High Current Switching. G Uninterruptible Power Supply. Inverter Systems. Display & Lighting Equipment. S N-Channel MOSFET Ordering and Markin

APM2605C P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-4.5A, S RDS(ON)=43m (typ.) @ VGS=-10V D D G RDS(ON)=60m (typ.) @ VGS=-4.5V D D Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23-6 (RoHS Compliant) (4) S Applications (3) G Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. D D D

SM2604NSC N-Channel Enhancement Mode MOSFET Features Pin Description 30V/7.4A, S RDS(ON)= 24m (max.) @ VGS=10V D D G RDS(ON)= 32.5m (max.) @ VGS=4.5V D D Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23-6 (RoHS Compliant) (1,2,5,6) DD DD Applications Power Management in Notebook Computer, (3)G Portable Equipment and Battery Powered S

SM2328NSAN N-Channel Enhancement Mode MOSFET Features Pin Description 20V/4A, D RDS(ON)= 40m (max.) @ VGS= 4.5V S RDS(ON)= 55m (max.) @ VGS= 2.5V G RDS(ON)= 85m (max.) @ VGS= 1.8V Top View of Narrow SOT-23 Reliable and Rugged Lead Free and Green Devices Available D (RoHS Compliant) G Applications Power Management in DC/AC Inverter Systems. S N-Channel MOSFET Ordering

SM2A04NSV N-Channel Enhancement Mode MOSFET Features Pin Description 200V/1.9A, RDS(ON)= 400m (max.) @ VGS= 10V G Reliable and Rugged D S Lead Free and Green Devices Available Top View SOT-223 (RoHS Compliant) D Applications Power Management in TV Inverter. G S N-Channel MOSFET Ordering and Marking Information Package Code SM2A04NS V SOT-223 Assembly Material O

APM2324AA N-Channel Enhancement Mode MOSFET Features Pin Description 20V/3A, D RDS(ON)= 50m (Typ.) @ VGS= 4.5V S RDS(ON)= 65m (Typ.) @ VGS= 2.5V G RDS(ON)= 120m (Typ.) @ VGS= 1.8V Reliable and Rugged Top View of SOT-23 Lead Free and Green Devices Available (RoHS Compliant) D G Applications Power Management in Notebook Computer, Portable Equipment and Ba

SM2501NSU N-Channel Enhancement Mode MOSFET Features Pin Description 25V/60A, Drain 4 RDS(ON)= 5m (Max.) @ VGS=10V 3 Source 2 RDS(ON)= 6m (Max.) @ VGS=4.5V 1 Gate RDS(ON)= 7.5m (Max.) @ VGS=2.5V Reliable and Rugged Top View of TO-252-3 Lead Free and Green Devices Available D (RoHS Compliant) Applications G Power Motor Controls. High Frequency Isolated DC-DC Con

APM2055NU N-Channel Enhancement Mode MOSFET Features Pin Description 20V/10A, D RDS(ON)=55m (Typ.) @ VGS=10V S RDS(ON)=75m (Typ.) @ VGS=4.5V G RDS(ON)=140m (Typ.) @ VGS=2.5V Super High Dense Cell Design Top View of TO-252 Reliable and Rugged Lead Free and Green Devices Available D (RoHS Compliant) Applications G Power Management in Desktop Computer o

SM2222CSQG Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 20V/4.5A, S2 G2 D1 D1 RDS(ON)= 32m (max.) @ VGS=4.5V D2 RDS(ON)= 48.6m (max.) @ VGS=2.5V D2 RDS(ON)= 85m (max.) @ VGS=1.8V G1 Pin 1 S1 P-Channel DFN2x2C-6_EP2 -20V/-2.7A, RDS(ON)= 85m (max.) @ VGS=-4.5V RDS(ON)= 127m (max.) @ VGS=-2.5V (3)D2 (6)D1 RDS(ON)= 230m (max.)

SM2213PSQG P-Channel Enhancement Mode MOSFET Features Pin Description -8V/-9.4A, S D D RDS(ON) = 19m (max.) @ VGS =-4.5V D RDS(ON) = 24m (max.) @ VGS =-2.5V G S RDS(ON) = 33m (max.) @ VGS =-1.8V Pin 1 D D RDS(ON) = 45m (max.) @ VGS =-1.5V DFN2x2-6 RDS(ON) = 90m (max.) @ VGS =-1.2V Reliable and Rugged (1,2,5,6) DD DD Lead Free and Green Devices Available (RoH

SM2314NSA N-Channel Enhancement Mode MOSFET Features Pin Description 20V/4.5A , D RDS(ON)=45m (max.) @ VGS=4.5V RDS(ON)=60m (max.) @ VGS=2.5V S RDS(ON)=85m (max.) @ VGS=1.8V G Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23-3 (RoHS Compliant) D ESD Protection Applications G Power Management in Notebook Computer, Portable Equipment and Batt

SM2370NSA N-Channel Enhancement Mode MOSFET Features Pin Description D 100V/2A, RDS(ON)= 156m (max.) @ VGS=10V S RDS(ON)= 176m (max.) @ VGS=4.5V G ESD Protection Top View of SOT-23 100% UIS + Rg Tested Reliable and Rugged Lead Free and Green Devices Available D (RoHS Compliant) G Applications Power Management in TV Inveter. S N-Channel MOSFET Ordering and Markin

SM2054NSD N-Channel Enhancement Mode MOSFET Features Pin Description 20V/7.5A, RDS(ON)= 21m (max.) @ VGS= 10V S D RDS(ON)= 23m (max.) @ VGS= 4.5V G RDS(ON)= 36m (max.) @ VGS= 2.5V Reliable and Rugged Top View SOT-89 ESD Protection Lead Free and Green Devices Available D (2) (RoHS Compliant) G (1) Applications Switching Regulators S (3) Switching Converters N-Chann

SM2A12NSKP N-Channel Enhancement Mode MOSFET Features Pin Description 200V/23A, D D D D RDS(ON)= 70m (max.) @ VGS= 10V Reliable and Rugged G Lead Free and Green Devices Available S Pin 1 S S (RoHS Compliant) DFN5x6-8 ( 5,6,7,8 ) D D DD (4) Applications G Power Management in TV Converter. DC-DC Converter. S S S (1, 2, 3) N-Channel MOSFET Ordering and Marking

SM2621PSC P-Channel Enhancement Mode MOSFET Features Pin Description S -30V/-5.1A , D D G RDS(ON)= 54m (Max.) @ VGS=-10V D RDS(ON)= 65m (Max.) @ VGS=-4.5V D RDS(ON)= 92m (Max.) @ VGS=-2.5V Top View of SOT-23-6 Reliable and Rugged Lead Free and Green Devices Available (1,2,5,6) (RoHS Compliant) DD DD Applications (3)G Power Management in Notebook Comput

SM2A08NSF N-Channel Enhancement Mode MOSFET Features Pin Description 200V/10A, RDS(ON)=205m (max.) @ VGS=10V 100% UIS + Rg Tested S D Reliable and Rugged G Lead Free and Green Devices Available Top View of TO-220 (RoHS Compliant) D Applications G High Frequency DC-DC Converters. Plasma Display Panel. Power Management in TV Converter. S N-Channel MOSFET

SM2416NSAN N-Channel Enhancement Mode MOSFET Features Pin Description D 30V/0.83A , RDS(ON)=700m (max.) @ VGS=4.5V S RDS(ON)=1000m (max.) @ VGS=2.5V G RDS(ON)=1600m (max.) @ VGS=1.8V Reliable and Rugged Top View of SOT-23N Lead Free and Green Devices Available D (RoHS Compliant) ESD Protection G Applications High Speed and Analog Switching Applications. S Low volta

SM2404NSAN N-Channel Enhancement Mode MOSFET Features Pin Description D 30V/5.1A, RDS(ON)=26.5m (max.) @ VGS=10V S RDS(ON)=36.5m (max.) @ VGS=4.5V G Reliable and Rugged Top View of SOT-23N Lead Free and Green Devices Available (RoHS Compliant) D Applications G Power Magangement in Notebook Computer, Portable Equipment and Battery Powered Systems. S Load Swit

SM2A12NSF N-Channel Enhancement Mode MOSFET Features Pin Description 200V/25A, RDS(ON)= 70m (max.) @ VGS= 10V Reliable and Rugged S Lead Free and Green Devices Available D G (RoHS Compliant) Top View of TO-220 D G Applications High Frequency DC-DC converters. S Plasma Display Panel. Power Management in TV Converter. N-Channel MOSFET Ordering and Marking Informati

SM2660NSC N-Channel Enhancement Mode MOSFET Features Pin Description 60V/5A, S D RDS(ON)= 48m (max.) @ VGS=10V D G RDS(ON)= 59m (max.) @ VGS=4.5V D D Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23-6 (RoHS Compliant) (1,2,5,6) DDDD Applications (3)G High frequency DC-DC converters. (4)S N-Channel MOSFET Ordering and Marking Informa

SM2013PSKP P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-100Aa, D D RDS(ON) = 3.0m (max.) @ VGS =-10V D D RDS(ON) = 3.9m (max.) @ VGS =-4.5V RDS(ON) = 5.7m (max.) @ VGS =-2.5V G Pin 1 S S 100% UIS + Rg Tested S DFN5x6A-8_EP Reliable and Rugged Lead Free and Green Devices Available ( 5,6,7,8 ) (RoHS Compliant) DDDD Applications (4) Portable Equi

APM2301CA P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-3A D RDS(ON)= 70m (max.) @ VGS= -4.5V S RDS(ON)= 115m (max.) @ VGS= -2.5V G RDS(ON)= 250m (max.) @ VGS= -1.8V Reliable and Rugged Top View of SOT-23 Lead Free and Green Devices Available ( RoHS Compliant) D G Applications Power Management in Notebook Computer, Portable Equipment and

SM2608NSC N-Channel Enhancement Mode MOSFET Features Pin Description 30V/7.4A, S D RDS(ON)= 17m (max.) @ VGS=10V D G RDS(ON)= 21.5m (max.) @ VGS=4.5V D D Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23-6 (RoHS Compliant) (1,2,5,6) DD DD Applications Power Management in Notebook Computer, (3)G Portable Equipment and Battery Powered S

SM2300NSA N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A , D RDS(ON)=25m (max.) @ VGS=10V RDS(ON)=30m (max.) @ VGS=4.5V S RDS(ON)=40m (max.) @ VGS=2.5V G RDS(ON)=60m (max.) @ VGS=1.8V Reliable and Rugged Top View of SOT-23-3 Lead Free and Green Devices Available D (RoHS Compliant) ESD Protection G Applications Power Management in Notebook Computer

SM2290NSQG N-Channel Enhancement Mode MOSFET Features Pin Description S D 150V/1.6A, D D RDS(ON) = 360m (max.) @ VGS =10V G S ESD Protection Pin 1 D D 100% UIS Tested DFN2x2A-6_EP Reliable and Rugged (1,2,5,6) Lead Free and Green Devices Available DDDD (RoHS Compliant) Applications (3)G For POE Power Primary Side Switch for (4)S Low. Power DC/DC Converters.

SM2215PSQG P-Channel Enhancement Mode MOSFET Features Pin Description S D -20V/-9.4A, D D RDS(ON) = 19m (max.) @ VGS =-4.5V RDS(ON) = 27m (max.) @ VGS =-2.5V G S Pin 1 D D RDS(ON) = 45m (max.) @ VGS =-1.8V Super High Dense Cell Design DFN2x2-6 Reliable and Rugged (1,2,5,6) DD DD Lead Free and Green Devices Available (RoHS Compliant) Applications (3)G Powe

SM2620CSC Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 30V/4.9A, D2 S1 RDS(ON)=39m (max.) @ VGS=10V D1 G2 S2 RDS(ON)=68m (max.) @ VGS=4.5V G1 P-Channel Top View of SOT-23-6 -30V/-3A, RDS(ON)=100m (max.) @ VGS=-10V (4)D2 (6)D1 RDS(ON)=170m (max.) @ VGS=-4.5V Reliable and Rugged Lead Free and Green Devices Availabl

SM2333PSA P-Channel Enhancement Mode MOSFET Features Pin Description -12V/-6.3A, D RDS(ON) = 26m (max.) @ VGS =-4.5V S RDS(ON) = 33m (max.) @ VGS =-2.5V G RDS(ON) = 40m (max.) @ VGS =-1.8V RDS(ON) = 60m (max.) @ VGS =-1.5V Top View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices Available D (RoHS Compliant) G Applications Power Management in Notebook Comput

SM2335PSA P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-7.1A, D RDS(ON) = 22m (max.) @ VGS =-4.5V RDS(ON) = 30m (max.) @ VGS =-2.5V S RDS(ON) = 45m (max.) @ VGS =-1.8V G Reliable and Rugged Top View of SOT-23-3 Lead Free and Green Devices Available (RoHS Compliant) HBM ESD protection level pass 2KV D Note The diode connected between the gate and sour

SM2202NSQG N-Channel Enhancement Mode MOSFET Features Pin Description S D 30V/8.4A, D D RDS(ON) = 15.5m (max.) @ VGS =10V RDS(ON) = 21m (max.) @ VGS =4.5V G S D Pin 1 D Avalanche Rated DFN2x2-6 Reliable and Rugged Lead Free and Green Devices Available (1,2,5,6) DD DD (RoHS Compliant) 100% UIS Tested Applications (3)G Power Management in Notebook Computer,

SM2006NSK N-Channel Enhancement Mode MOSFET Features Pin Description D D 20V/10A, D D RDS(ON) = 18m (max.) @ VGS = 4.5V RDS(ON) = 27m (max.) @ VGS = 2.5V S S 100% UIS Tested S G Reliable and Rugged Top View of SOP-8 Lead Free Available (RoHS Compliant) ( 5,6,7,8 ) D D D D Applications (4) G Power Management in Desktop Computer or DC/DC Converters. S S

SM2303PSA P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-4A, D RDS(ON) = 56m (max.) @ VGS =-10V S RDS(ON) = 88m (max.) @ VGS =-4.5V G Reliable and Rugged Top View of SOT-23-3 Lead Free and Green Devices Available (RoHS Compliant) D Applications G Power Management in Notebook Computer, Portable Equipment and Battery Powered S Systems. P-Channel MOSFE

SM2F07NSU N-Channel Enhancement Mode MOSFET Features Pin Description 250V/5.2A, D RDS(ON)= 690m (Max.) @ VGS=10V S 100% UIS + Rg Tested G Reliable and Rugged Top View of TO-252-2 Lead Free and Green Devices Available (RoHS Compliant) D Applications G Power Management in TV Inverter. S N-Channel MOSFET Ordering and Marking Information Package Code SM2F07NS U TO

SM2630DSC Dual N-Channel Enhancement Mode MOSFET Features Pin Description 30V/4A, D2 S1 RDS(ON)=39m (max.) @ VGS=10V D1 G2 RDS(ON)=68m (max.) @ VGS=4.5V S2 G1 Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23-6 (RoHS Compliant) (6)D1 (4)D2 (1) (3) Applications G1 G2 Power Management in Notebook Computer, Portable Equipment and Ba

SM2054NSV N-Channel Enhancement Mode MOSFET Features Pin Description 20V/7.5A, RDS(ON)= 23.5m (max.) @ VGS= 10V G RDS(ON)= 27m (max.) @ VGS= 4.5V D S RDS(ON)= 42m (max.) @ VGS= 2.5V Reliable and Rugged Top View SOT-223 ESD Protection Lead Free and Green Devices Available D (2) (RoHS Compliant) G (1) Applications Switching Regulators S (3) Switching Converters N-Ch

SM2670NSC N-Channel Enhancement Mode MOSFET Features Pin Description 100V/2.6A, S D RDS(ON)= 156m (max.) @ VGS=10V D G RDS(ON)= 176m (max.) @ VGS=4.5V D D ESD Protection 100% UIS Tested Top View of SOT-23-6 Reliable and Rugged (1,2,5,6) Lead Free and Green Devices Available DDDD (RoHS Compliant) Applications (3)G Power Management in DC/DC Converter. (4)S

SM2A11NSF N-Channel Enhancement Mode MOSFET Features Pin Description 200V/58A, RDS(ON)= 26.5m (max.) @ VGS= 10V 100% UIS + Rg Tested S Reliable and Rugged D G Lead Free and Green Devices Available Top View of TO-220 (RoHS Compliant) D Applications G Synchronous Rectification. Power Management in Inverter Systems. S N-Channel MOSFET Ordering and Marking Informatio

SM2323PSA P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-2.9A, D RDS(ON) = 108m (max.) @ VGS =-10V S RDS(ON) = 182m (max.) @ VGS =-4.5V G Reliable and Rugged Top View of SOT-23-3 Lead Free and Green Devices Available (RoHS Compliant) ESD Protection D Note The diode connected between the gate and source serves only as protection against ESD. No gat

SM2312NSA N-Channel Enhancement Mode MOSFET Features Pin Description 30V/3A, D RDS(ON)=72m (max.) @ VGS=10V S RDS(ON)=100m (max.) @ VGS=4.5V G Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23-3 (RoHS Compliant) D Applications G DC-DC Conversion. Load Switch for PC fields. S Load Switch for Portables. N-Channel MOSFET Ordering and Marki

SM2203NSQG N-Channel Enhancement Mode MOSFET Features Pin Description S D 30V/7.4A, D D RDS(ON) = 20.5m (max.) @ VGS =10V RDS(ON) = 28.5m (max.) @ VGS =4.5V G S Pin 1 D D Reliable and Rugged DFN2x2-6 Lead Free and Green Devices Available (RoHS Compliant) (1,2,5,6) DD DD 100% UIS Tested Applications (3)G Power Management in Notebook Computer, (4)S Portable

SM2430NSAN N-Channel Enhancement Mode MOSFET Features Pin Description D 30V/1.49A , RDS(ON)= 390m (max.) @ VGS=4.5V S RDS(ON)= 420m (max.) @ VGS=4V G RDS(ON)= 820m (max.) @ VGS=2.5V Reliable and Rugged Top View of SOT-23N Lead Free and Green Devices Available D (RoHS Compliant) ESD Protection HBM>3KV, MM>200V RG Applications G High Speed and Analog Switch

SM2300NSAN N-Channel Enhancement Mode MOSFET Features Pin Description 20V/4A, D RDS(ON)= 40m (max.) @ VGS= 4.5V S RDS(ON)= 55m (max.) @ VGS= 2.5V G RDS(ON)= 85m (max.) @ VGS= 1.8V Top View of SOT-23N Reliable and Rugged Lead Free and Green Devices Available D (RoHS Compliant) G Applications Power Management in DC/AC Inverter Systems. S N-Channel MOSFET

SM2360NSA N-Channel Enhancement Mode MOSFET Features Pin Description 60V/2.7A , D RDS(ON)=104m (max.) @ VGS=10V S RDS(ON)=130m (max.) @ VGS=4.5V G Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23-3 (RoHS Compliant) D Applications G Power Management in DC/AC Inverer Systems. S N-Channel MOSFET Ordering and Marking Information SM2360NS Packa

SM2011PSKP P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-100Aa, D D RDS(ON) = 2.0m (max.) @ VGS =-10V D D RDS(ON) = 2.5m (max.) @ VGS =-4.5V RDS(ON) = 3.6m (max.) @ VGS =-2.5V G Pin 1 S S 100% UIS + Rg Tested S DFN5x6A-8_EP ESD Protection Reliable and Rugged ( 5,6,7,8 ) Lead Free and Green Devices Available DDDD (RoHS Compliant) (4) Applications

SM2A04NSU N-Channel Enhancement Mode MOSFET Features Pin Description 200V/8A, Drain 4 RDS(ON)= 400m (Max.) @ VGS= 10V 3 Source 2 Reliable and Rugged 1 Gate Lead Free and Green Devices Available (RoHS Compliant) Top View of TO-252-3 D Applications G Power Management in TV Inverter. S N-Channel MOSFET Ordering and Marking Information Package Code SM2A04NS U TO-

SM2014NSKP N-Channel Enhancement Mode MOSFET Features Pin Description 20V/13.8A, D D D D RDS(ON)= 19.5m (max.) @ VGS=4.5V RDS(ON)= 27m (max.) @ VGS=2.5V G Pin 1 Reliable and Rugged S S S Lead Free and Green Devices Available DFN5x6-8 (RoHS Compliant) ESD Protection. D (5, 6) Applications G (4) Power Management in Notebook Computer, Portable Equipment and Battery

SM2223PSQG P-Channel Enhancement Mode MOSFET Features Pin Description S D -12V/-11A, D D RDS(ON) = 13.8m (max.) @ VGS =-4.5V RDS(ON) = 19m (max.) @ VGS =-2.5V S G Pin 1 D D RDS(ON) = 26m (max.) @ VGS =-1.8V RDS(ON) = 36m (max.) @ VGS =-1.5V DFN2x2-6 Reliable and Rugged (1,2,5,6) DD DD Lead Free and Green Devices Available (RoHS Compliant) Applications (3)G

SM2310NSA N-Channel Enhancement Mode MOSFET Features Pin Description 55V/2.1A , D RDS(ON)=130m (max.) @ VGS=4.5V S RDS(ON)=180m (max.) @ VGS=2.5V G Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23-3 (RoHS Compliant) D Applications G Power Management in DC/AC Inverer Systems. S N-Channel MOSFET Ordering and Marking Information SM2310NS Pac

SM2A06NSF N-Channel Enhancement Mode MOSFET Features Pin Description 200V/18A, RDS(ON)=140m (max.) @ VGS=10V Reliable and Rugged S D Lead Free and Green Devices Available G (RoHS Compliant) Top View of TO-220 D Applications G Power Management in TV Inverter. S N-Channel MOSFET Ordering and Marking Information Package Code SM2A06NS F TO-220 Assembly Material Oper

SM2558NUB N-Channel Enhancement Mode MOSFET Features Pin Description 25V/60A, RDS(ON)=4.5m (Typ.) @ VGS=10V RDS(ON)=7.5m (Typ.) @ VGS=4.5V S D Reliable and Rugged G Avalanche Rated Lead Free and Green Devices Available Top View of TO-251 (RoHS Compliant) D 100% UIS + Rg Tested Applications G Power Management in Desktop Computer or DC/DC Converters. S N-C

SM2304NSA N-Channel Enhancement Mode MOSFET Features Pin Description 30V/5.1A, D RDS(ON)=25m (max.) @ VGS=10V S RDS(ON)=35m (max.) @ VGS=4.5V G Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23-3 (RoHS Compliant) D 100% UIS + Rg Tested Applications G Power Magangement in Notebook Computer, Portable Equipment and Battery Powered Sys

SM2260NSQG N-Channel Enhancement Mode MOSFET Features Pin Description S D 60V/5.2A, D D RDS(ON) = 48m (max.) @ VGS =10V RDS(ON) = 59m (max.) @ VGS =4.5V S G Pin 1 D D Reliable and Rugged DFN2x2-6 Lead Free and Green Devices Available (RoHS Compliant) (1,2,5,6) DDDD 100% UIS Tested Applications (3)G High frequency DC-DC converters. (4)S N-Channel MOSFET Or

SM2A02NSU N-Channel Enhancement Mode MOSFET Features Pin Description 200V/16A, D RDS(ON)=90m (Max.) @ VGS=10V S Reliable and Rugged G Lead Free and Green Devices Available (RoHS Compliant) Top View of TO-252-3 D Applications G Power Management in TV Converter. DC-DC Converter. S N-Channel MOSFET Ordering and Marking Information Package Code SM2A02NS U TO-252-3

SM2205PSQG P-Channel Enhancement Mode MOSFET Features Pin Description S D -20V/-6.5A, D D RDS(ON) = 39m (max.) @ VGS =-4.5V RDS(ON) = 56m (max.) @ VGS =-2.5V G S Pin 1 D D Reliable and Rugged DFN2x2-6 Lead Free and Green Devices Available (RoHS Compliant) (1,2,5,6) DD DD Applications (3)G Power Management in Notebook Computer, (4)S Portable Equipment and Bat

APM2303A P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-4A, D RDS(ON)=55m (max.) @ VGS=-10V S RDS(ON)=70m (max.) @ VGS=-4.5V G RDS(ON)=115m (max.) @ VGS=-2.5V Top View of SOT-23-3 Super High Dense Cell Design D Reliable and Rugged Enhance ESD Cell Protection Lead Free and Green Devices Available (RoHS Compliant) G Applications P

SM2A08NSFP N-Channel Enhancement Mode MOSFET Features Pin Description 200V/9A, RDS(ON)=205m (max.) @ VGS=10V 100% UIS + Rg Tested S D Reliable and Rugged G Lead Free and Green Devices Available Top View of TO-220FP (RoHS Compliant) D Applications G High Frequency DC-DC Converters. Plasma Display Panel. Power Management in TV Converter. S N-Channel MOSFET

SM2206NSQG N-Channel Enhancement Mode MOSFET Features Pin Description S D 20V/9A, D D RDS(ON) = 10.9m (max.) @ VGS =4.5V RDS(ON) = 15.5m (max.) @ VGS =2.5V S G Pin 1 D D RDS(ON) = 26m (max.) @ VGS =1.8V 100% UIS + Rg Tested DFN2x2A-6_EP Reliable and Rugged (1,2,5,6) DDDD Lead Free and Green Devices Available (RoHS Compliant) Applications (3)G Li-lon Battery Pac

SM2307PSA P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-6A , D RDS(ON)=29m (Max.) @ VGS=-4.5V S RDS(ON)=40m (Max.) @ VGS=-2.5V G RDS(ON)=60m (Max.) @ VGS=-1.8V Top View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) D Applications G Power Management in Notebook Computer, Portable Equipment and Battery Powered

SM2211PSQG P-Channel Enhancement Mode MOSFET Features Pin Description S D -30V/-7.9A, D D RDS(ON) = 27m (max.) @ VGS =-10V RDS(ON) = 42m (max.) @ VGS =-4.5V G S Pin 1 D D 100% UIS + Rg Tested DFN2x2A-6_EP Reliable and Rugged Lead Free and Green Devices Available (1,2,5,6) DD DD (RoHS Compliant) Applications (3)G Power Management in Notebook Computer, (4)S Port

SM2691PSC P-Channel Enhancement Mode MOSFET Features Pin Description S -150V/-1.1A , D D G RDS(ON)= 750m (Max.) @ VGS=-10V D D 100% UIS + Rg Tested Reliable and Rugged Top View of SOT-23-6 Lead Free and Green Devices Available (RoHS Compliant) (1,2,5,6) DDDD Applications (3)G Load switch for Networking application. (4)S P-Channel MOSFET Ordering and Marking Info

APM2306A N-Channel Enhancement Mode MOSFET Features Pin Description 30V/3.5A , D RDS(ON)= 65m (max.) @ VGS=10V S RDS(ON)= 90m (max.) @ VGS=5V G Super High Dense Cell Design Reliable and Rugged Top View of SOT-23-3 Lead Free and Green Devices Available D (RoHS Compliant) Applications G Power Management in Notebook Computer, Portable Equipment and Battery Powered Sys

SM2001CSK Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description D1 N-Channel D1 D2 20V/9.5A, D2 RDS(ON) =14m (max.) @ VGS = 4.5V RDS(ON) =18m (max.) @ VGS = 2.5V S1 G1 S2 P-Channel G2 -20V/-6A, Top View of SOP 8 RDS(ON) =45m (max.) @ VGS =-4.5V RDS(ON) =65m (max.) @ VGS =-2.5V (8) (7) (6) (5) D1 D1 D2 D2 100% UIS + Rg Tested Reliable and Rug

SM2305PSA P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-4.9A , D RDS(ON)=43m (Max.) @ VGS=-4.5V S RDS(ON)=58m (Max.) @ VGS=-2.5V G RDS(ON)=88m (Max.) @ VGS=-1.8V Top View of SOT-23 100% UIS + Rg Tested Reliable and Rugged Lead Free and Green Devices Available D (RoHS Compliant) Applications G Power Management in Notebook Computer, Po

SM2318NSA N-Channel Enhancement Mode MOSFET Features Pin Description 30V/4.8A, D RDS(ON)=40m (max.) @ VGS=10V S RDS(ON)=48m (max.) @ VGS=4.5V G RDS(ON)=85m (max.) @ VGS=2.5V Reliable and Rugged Top View of SOT-23-3 Lead Free and Green Devices Available D (RoHS Compliant) Applications G Power Management in Notebook Computer, Portable Equipment and Battery Powered Sy

SM2316NSA N-Channel Enhancement Mode MOSFET Features Pin Description D 30V/6.2A, RDS(ON)= 23.5m (max.) @ VGS=10V S RDS(ON)= 26m (max.) @ VGS=4.5V G RDS(ON)= 34m (max.) @ VGS=2.5V ESD Protection Top View of TSOT-23 100% UIS + Rg Tested Reliable and Rugged D Lead Free and Green Devices Available (RoHS Compliant) G Applications Load Switch. DC-DC converter. S Po

SM2363PSA P-Channel Enhancement Mode MOSFET Features Pin Description -60V/-1.8A, D RDS(ON)= 225m (max.) @ VGS=-10V RDS(ON)= 300m (max.) @ VGS=-4.5V S ESD Protection G 100% UIS+Rg Tested Top View of SOT-23 Reliable and Rugged Lead Free and Green Devices Available D (RoHS Compliant) Applications G Power Management in DC/DC Converter. Load switch. S P-Channel MOSFET

APM2701AC Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 20V/3A, D2 S1 RDS(ON)=50m (typ.) @ VGS=4.5V D1 G2 RDS(ON)=65m (typ.) @ VGS=2.5V S2 G1 P-Channel -20V/-2A, Top View of SOT-23-6 RDS(ON)=90m (typ.) @ VGS=-4.5V (4)D2 RDS(ON)=130m (typ.) @ VGS=-2.5V (6)D1 Reliable and Rugged Lead Free and Green Devices Available (

SM2A08NSU N-Channel Enhancement Mode MOSFET Features Pin Description 200V/10A, D RDS(ON)=210m (max.) @ VGS=10V S Reliable and Rugged G Lead Free and Green Devices Available (RoHS Compliant) Top View of TO-252-3 D Applications High Current Switching. G Uninterruptible Power Supply. Inverter Systems. Display & Lighting Equipment. S N-Channel MOSFET Ordering and Mark

SM2692NSC N-Channel Enhancement Mode MOSFET Features Pin Description 200V/1.2A, S D RDS(ON)= 700m (max.) @ VGS=10V D G ESD Protection D D 100% UIS + Rg Tested Reliable and Rugged Top View of SOT-23-6 Lead Free and Green Devices Available (1,2,5,6) (RoHS Compliant) DDDD Applications (3)G DC-DC converter for Networking. Load switch. (4)S N-Channel MOSFET Ord

SM2A27NSFP N-Channel Enhancement Mode MOSFET Features Pin Description 200V/4A, RDS(ON)= 660m (Max.) @ VGS=10V RDS(ON)= 740m (Max.) @ VGS=4.5V S 100% UIS + Rg Tested D G Reliable and Rugged Top View of TO-220FP Lead Free and Green Devices Available (RoHS Compliant) D (2) Applications G (1) Power Management in DC/DC Converter. S (3) N-Channel MOSFET Ordering and Mark

SM2425PSAN P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-3.7A, D RDS(ON) = 64m (max.) @ VGS =-10V S RDS(ON) = 96m (max.) @ VGS =-4.5V G Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23N (RoHS Compliant) ESD Protection D Note The diode connected between the gate and source serves only as protection against ESD. No g

APM2360A N-Channel Enhancement Mode MOSFET Features Pin Description 60V/2.7A , D RDS(ON)=104m (max.) @ VGS=10V S RDS(ON)=130m (max.) @ VGS=4.5V G 100% UIS + Rg Tested Reliable and Rugged Top View of SOT-23 Lead Free and Green Devices Available D (RoHS Compliant) Applications G Power Management in DC/AC Inverer Systems. S N-Channel MOSFET Ordering and Marking Informa

APM2300CA N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A , D RDS(ON)=25m (typ.) @ VGS=10V S RDS(ON)=32m (typ.) @ VGS=4.5V G RDS(ON)=40m (typ.) @ VGS=2.5V RDS(ON)=65m (typ.) @ VGS=1.8V Top View of SOT-23 Reliable and Rugged D Lead Free and Green Devices Available (RoHS Compliant) G Applications Power Management in Notebook Computer, Port

SM2221CSQG Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 12V/6.8A, S2 G2 D1 D1 RDS(ON)= 21m (max.) @ VGS=4.5V D2 RDS(ON)= 27m (max.) @ VGS=2.5V D2 RDS(ON)= 39m (max.) @ VGS=1.8V G1 Pin 1 S1 RDS(ON)= 62m (max.) @ VGS=1.5V DFN2x2-6 P-Channel -12V/-4.4A, RDS(ON)= 50m (max.) @ VGS=-4.5V (3)D2 (6)D1 RDS(ON)= 65

SM2A01NSF/SM2A01NSFP N-Channel Enhancement Mode MOSFET Features Pin Description 200V/65A, RDS(ON)= 28m (max.) @ VGS= 10V Reliable and Rugged S S D D G G Lead Free and Green Devices Available Top View of TO-220 Top View of TO-220-FP (RoHS Compliant) D Applications G Synchronous Rectification. Power Management in Inverter Systems. S N-Channel MOSFET Ordering and Markin

SM2208NSQG N-Channel Enhancement Mode MOSFET Features Pin Description S D 24V/12A, D D RDS(ON) = 5.8m (max.) @ VGS =10V RDS(ON) = 6.9m (max.) @ VGS =4.5V G S Pin 1 D D RDS(ON) = 10m (max.) @ VGS =2.5V 100% UIS + Rg Tested DFN2x2A-6_EP Reliable and Rugged (1,2,5,6) DDDD Lead Free and Green Devices Available (RoHS Compliant) Applications (3)G Battery Management A

SM2A01NSF/SM2A01NSFP N-Channel Enhancement Mode MOSFET Features Pin Description 200V/65A, RDS(ON)= 28m (max.) @ VGS= 10V Reliable and Rugged S S D D G G Lead Free and Green Devices Available Top View of TO-220 Top View of TO-220FP (RoHS Compliant) 100% UIS + Rg Tested D Applications G Synchronous Rectification. Power Management in Inverter Systems. S N-Ch

SM2518NUB N-Channel Enhancement Mode MOSFET Features Pin Description 25V/50A, RDS(ON)=8m (Typ.) @ VGS=10V RDS(ON)=15m (Typ.) @ VGS=4.5V S D Reliable and Rugged G Avalanche Rated Lead Free and Green Devices Available Top View of TO-251 (RoHS Compliant) 100% UIS + Rg Tested D Applications G Power Management in Desktop Computer or DC/DC Converters. S N-Channel

SM2309PSA P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-3.1A, D RDS(ON) = 95m (max.) @ VGS =-10V S RDS(ON) = 150m (max.) @ VGS =-4.5V G Reliable and Rugged Top View of SOT-23-3 Lead Free and Green Devices Available (RoHS Compliant) D G Applications Power Management in Notebook Computer, Portable Equipment and Battery Powered S Systems. P-Channel MO

SM2308NSA N-Channel Enhancement Mode MOSFET Features Pin Description 30V/5.2A , D RDS(ON)= 35m (max.) @ VGS=10V S RDS(ON)= 45m (max.) @ VGS=4.5V G 100% UIS + Rg Tested Reliable and Rugged Top View of SOT-23 Lead Free and Green Devices Available (RoHS Compliant) D ESD Protection G Applications Load Switch. DC-DC converter. S Power Management Function. N-Channel

SM2004NSD N-Channel Enhancement Mode MOSFET Features Pin Description 20V/7A, RDS(ON)= 22m (max.) @ VGS= 10V S D RDS(ON)= 28m (max.) @ VGS= 4.5V G RDS(ON)= 54m (max.) @ VGS= 2.5V 100% UIS and Rg tested Top View SOT-89 ESD Protection Reliable and Rugged D (2) Lead Free and Green Devices Available (RoHS Compliant) G (1) Applications Switching Regulators. S (3) Sw

SM2331PSA P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-3.9A, D RDS(ON)= 60m (Max.) @ VGS=-4.5V S RDS(ON)= 90m (Max.) @ VGS=-2.5V G RDS(ON)=150m (Max.) @ VGS=-1.8V Top View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices Available D (RoHS Compliant) G Applications Power Management in Notebook Computer, Portable Equipment and Battery Powere

SM2311PSA P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-3.8A, D RDS(ON) = 62m (max.) @ VGS =-10V S RDS(ON) = 90m (max.) @ VGS =-4.5V G ESD Protection Top View of SOT-23 100% UIS + Rg Tested Reliable and Rugged Lead Free and Green Devices Available D (RoHS Compliant) Applications G Power Management in Notebook Computer, Portable Equipment and Ba

SM2605PSC P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-7.5A, S D RDS(ON) = 30m (max.) @ VGS =-10V D G RDS(ON) = 45m (max.) @ VGS =-4.5V D D Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23-6 (RoHS Compliant) (1,2,5,6) DD DD Applications (3)G Power Management in Notebook Computer, Portable Equipment and Battery Powe

SM2613PSC P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-5.6A , S D RDS(ON)= 45m (Max.) @ VGS=-4.5V D G RDS(ON)= 66m (Max.) @ VGS=-2.5V D D RDS(ON)=104m (Max.) @ VGS=-1.8V 100% UIS + Rg Tested Top View of SOT-23-6 Reliable and Rugged Lead Free and Green Devices Available (1,2,5,6) DD DD (RoHS Compliant) Applications (3)G Power Management in Noteb

SM2313PSA P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-3.5A, D RDS(ON)= 73m (Max.) @ VGS=-4.5V S RDS(ON)= 110m (Max.) @ VGS=-2.5V G RDS(ON)= 193m (Max.) @ VGS=-1.8V Top View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices Available D (RoHS Compliant) G Applications Power Management in Notebook Computer, Portable Equipment and Battery Powe

APM2309A P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-2.2A, D RDS(ON)= 105m (typ.) @ VGS= -10V S RDS(ON)= 165m (typ.) @ VGS= -4.5V G Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23-3 (RoHS Compliant) D Applications G Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. S P-Channel M

SM2315PSA P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-5A, D RDS(ON) = 42m (max.) @ VGS =-10V S RDS(ON) = 64m (max.) @ VGS =-4.5V G Reliable and Rugged Top View of SOT-23-3 Lead Free and Green Devices Available (RoHS Compliant) D G Applications Power Management in Notebook Computer, S Portable Equipment and Battery Powered P-Channel MOSFET Systems

SM2320NSA N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6.3A , D RDS(ON)=23m (max.) @ VGS=10V RDS(ON)=27m (max.) @ VGS=4.5V S RDS(ON)=40m (max.) @ VGS=2.5V G RDS(ON)=72m (max.) @ VGS=1.8V ESD Protection Top View of SOT-23-3 Reliable and Rugged D Lead Free and Green Devices Available (RoHS Compliant) G Applications Power Management in Notebook Comput

SM2413PSAN P-Channel Enhancement Mode MOSFET Features Pin Description D -20V/-3.5A, RDS(ON)= 73m (Max.) @ VGS=-4.5V S RDS(ON)= 110m (Max.) @ VGS=-2.5V G RDS(ON)= 193m (Max.) @ VGS=-1.8V Reliable and Rugged Top View of SOT-23N Lead Free and Green Devices Available (RoHS Compliant) D Applications G Power Management in Notebook Computer, Portable Equipment and

SM2609PSC P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-4A, S D RDS(ON) = 85m (max.) @ VGS =-10V D G D RDS(ON) = 135m (max.) @ VGS =-4.5V D Reliable and Rugged Top View of SOT-23-6 Lead Free and Green Devices Available (RoHS Compliant) (1,2,5,6) DD DD Applications (3)G Power Management in Notebook Computer, Portable Equipment and Battery Powere

APM2518NU N-Channel Enhancement Mode MOSFET Features Pin Description 25V/50A, D RDS(ON)=8m (Typ.) @ VGS=10V S RDS(ON)=15m (Typ.) @ VGS=4.5V G Reliable and Rugged Avalanche Rated Top View of TO-252-3 Lead Free and Green Devices Available D (RoHS Compliant) G Applications Power Management in Desktop Computer or DC/DC Converters. S N-Channel MOSFET Ordering and Markin

SM2A18NSV N-Channel Enhancement Mode MOSFET Features Pin Description 200V/1.1A, RDS(ON)= 1140m (max.) @ VGS= 10V G RDS(ON)= 1300m (max.) @ VGS= 4.5V D S 100% UIS+Rg tested Reliable and Rugged Top View SOT-223 Lead Free and Green Devices Available D (RoHS Compliant) Applications G Power Management in TV Inverter. S N-Channel MOSFET Ordering and Marking In

CSM260 N PD TC=25 250 W 2.0 W/ ID VGS=10V,TC=25 35 A ID VGS=10V,TC=100 28 A IDM 140 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.5 /W RthJA 48 /W BVDSS VGS=0V,ID=1.0mA 200 V VGS=10V,ID=28A 0.

R C28F MN0 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 800V N-Channel VDMOS RoHS 1 LD P E C 2 1 2

R CM20N60 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 2 3

R CM2N60C www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS

R C28C MN0 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 800V N-Channel VDMOS RoHS 1 LD P E C 2

R CM20N50 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 500V N-Channel VDMOS RoHS 1 2 3

R C2N0Z M05P www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 500V N-Channel VDMOS RoHS 1 2 1 2 3 3

R CM2N60F www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS

R CM2N65F www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS

R CM220N04 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 40V N-Channel Trench-MOS RoHS 1 US P 2 3

Product specification WNM2024 Single N-Channel, 20V, 3.9A, Power MOSFET VDS (V) Rds(on) ( ) 0.027@ VGS=4.5V 20 0.031@ VGS=2.5V 0.036@ VGS=1.8V SOT-23 Descriptions D 3 The WNM2024 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in 1 2 DC

Product specification WPM2015 Single P-Channel, -20V, -2.4A, Power MOSFET VDS (V) Rds(on) ( ) 0.081@ VGS= 4.5V -20 0.103@ VGS= 2.5V SOT-23 Descriptions D The WPM2015 is P-Channel enhancement 3 MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power s

Product specification WNM2034 N-Channel, 20V, 3.6A, Power MOSFET VDS (V) Rdson ( ) 0.037 @ 10V 20 0.045 @ 4.5V Descriptions SOT-23 The WNM2034 is N-Channel enhancement MOS D Field Effect Transistor. Uses advanced trench technology 3 and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion and power switch application

SMD Type MOSFET SMD Type TrMOSFET SMDType SMDType SMDType r SMDType IC SMD Type IC SMD Type oIC SMD Type ansistICs Product specification KDS3601 Features 1.3 A, 100 V. RDS(ON) = 480m @VGS =10 V RDS(ON) = 530m @VGS =6V Low gate charge (3.7 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability Abs

Product specification WNM2027 N-Channel, 20V, 3.6A, Power MOSFET Rds(on) Id V(BR)DSS (Max. m ) (A) 45 @ 4.5V 3.6 20 55 @ 2.5V 3.1 66 @ 1.8V 1.5 SOT-23 D Descriptions 3 The WNM2027 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC

Product specification WNM2025 Single N-Channel, 20V, 3.9 A, Power MOSFET VDS (V) Rds(on) ( ) 0.027@ VGS=4.5V 20 0.031@ VGS=2.5V 0.036@ VGS=1.8V SOT-23-3L Descriptions D 3 The WNM2025 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in 1 2

Product specification WNM2020 N-Channel, 20V, 0.90A, Small Signal MOSFET VDS (V) Rds(on) ( ) 0.220@ VGS=4.5V 20 0.260@ VGS=2.5V 0.320@ VGS=1.8V SOT-23 Descriptions The WNM2020 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) D 3 with low gate charge. This device is suitable for use in DC-DC convers

Product specification WNM2023 Single N-Channel, 20V, 3.2A, Power MOSFET VDS (V) Rds(on) ( ) 0.038@ VGS=4.5V 20 0.044@ VGS=2.5V 0.052@ VGS=1.8V SOT-23-3L Descriptions D 3 The WNM2023 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC

Product specification WNM2016 N-Channel, 20V, 3.2A, Power MOSFET V(BR)DSS Rds(on) 40 @ 4.5V 20 47 @ 2.5V 55 @ 1.8V SOT-23 D Descriptions 3 The WNM2016 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC 2 1 conversion and power swit

Product specification WPM2341A P-Channel Enhancement Mode Mosfet Features Higher Efficiency Extending Battery Life Miniature SOT23-3 Surface Mount Package 3 Super high density cell design for extremely low RDS (ON) 1 2 Applications DC/DC Converter Load Switch SOT 23-3 Battery Powered System LCD Display inverter Power Management in Portable, Battery P

Product specification WPM2026 Single P-Channel, -20V, -3.2A, Power MOSFET VDS (V) Rds(on) ( ) 0.056@ VGS= 4.5V -20 0.069@ VGS= 2.5V 0.086@ VGS= 1.8V SOT-23 Descriptions D 3 The WPM2026 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in

DGF30F65M2 30A 650V Trenchstop Insulated Gate Bipolar Transistor 1 Description Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation 2 Features FS Trench Technology, Positive temperature coefficient Low saturation voltage VCE(sat), typ = 1.9V @ I =30A

DGC20F65M2 20A 650V Trenchstop Insulated Gate Bipolar Transistor 1 Description Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation 2 Features FS Trench Technology, Positive temperature coefficient Low saturation voltage VCE(sat), typ = 1.8V @ I =20A

DGC40F65M2 40A 650V Trenchstop Insulated Gate Bipolar Transistor 1 Description Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation 2 Features FS Trench Technology, Positive temperature coefficient Low saturation voltage VCE(sat), typ = 1.85V @ I =40

DGC40F120M2 40A 1200V Trenchstop Insulated Gate Bipolar Transistor 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent Vcesat and switching speed ,low gate charge. Which accords with the RoHS standard. 2 Features Low Vcesat Low gate charge Excellent switching speed Easy paralleling capability d

DGD06F65M2 6A 650V Trenchstop Insulated Gate Bipolar Transistor 1 Description Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation 2 Features FS Trench Technology, Positive temperature coefficient Low saturation voltage VCE(sat), typ = 1.73V @ I =6A

DGC75F120M2 75A 1200V Trenchstop Insulated Gate Bipolar Transistor 1 Description Using DongHai's proprietary Trench design and advance FS technology, the 1200V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation 2 Features FS Trench Technology, Positive temperature coefficient Low saturation voltage V , typ = 2.1V

DGC40H120M2 40A 1200V Trenchstop Insulated Gate Bipolar Transistor 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent Vcesat and switching speed ,low gate charge. Which accords with the RoHS standard. 2 Features Low Vcesat Low gate charge Excellent switching speed Easy paralleling capability d

DGE20F65M2 20A 650V Trenchstop Insulated Gate Bipolar Transistor 1 Description Using DongHai's proprietary Trench design and advanced FS technology, the 650V FS IGBT offers superior switching performances, high avalanche ruggedness and easy parallel operation 2 Features FS Trench Technology, positive temperature coefficient Low saturation voltage V (sat), typ = 1.8V CE @ I =

DGC50F65M2 50A 650V Trenchstop Insulated Gate Bipolar Transistor 1 Description Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation 2 Features FS Trench Technology, Positive temperature coefficient Low saturation voltage VCE(sat), typ = 1.8V @ IC =50

DJC070N65M2 70A 650V N-channel Super Junction Power MOSFET 1 Description This N-channel enhanced vdmosfets, is using advanced super junction technology and design to provide excellent 2 D V = 650V DSS Rds(on) with low gate charge. Which accords with the R =63m DS(on) (TYP) G RoHS standard. 1 I = 70A D 3 S 2 Features Fast switching Low on resistance

SMD Type MOSFET P-Channel MOSFET WPM2015 (KPM2015) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-20V ID =-2.4 A 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 RDS(ON) 110m (VGS =-4.5V) +0.1 1.9-0.1 RDS(ON) 150m (VGS =-2.5V) Supper high density cell design 1. Gate 2. Source D 3. Drain 3 1 2 G S Absolute Maximum Rating

SMD Type MOSFET N-Channel MOSFET UTM2054 (KTM2054) 1.70 0.1 Features VDS (V) = 20V ID = 5 A (VGS = 10V) RDS(ON) 40m (VGS = 10V) 0.42 0.1 0.46 0.1 RDS(ON) 54m (VGS = 4.5V) RDS(ON) 130m (VGS = 2.5V) 1.Gate Fast switching capability 2.Drain 3.Source Drain Gate Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rat

SMD Type MOSFET P+Schottky Hybrid MOSFET WPM2005B (KPM2005B) DFN3X2-8L Unit mm 0.35 (max) 0.05 (max) 0.24 (min) Features VDS (V) =-20V ID =-2.7 A (VGS =-10V) RDS(ON) 125m (VGS =-4.5V) 0.25 (max) 0.08 (min) RDS(ON) 160m (VGS =-2.5V) 0.65 BSC 0.80 0.1 3.00 BSC Ultra Low VF Schottky 1 8 A C 7 2 A C 6 S D 3 G D 4 5 Absolu

SMD Type MOSFET N-Channel MOSFET WNM2020 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 20V ID = 0.83 A 1 2 RDS(ON) 310m (VGS = 4.5V) +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 RDS(ON) 360m (VGS = 2.5V) RDS(ON) 460m (VGS = 1.8V) 1. Gate 2. Source D 3. Drain 3 1 2 G S Absolute Maximum Ratings Ta = 2

SGT10U60SDM2D 10A 600V C 2 SGT10U60SDM2D 4 Plus Field Stop IV+ 1 G UPS,SMPS PFC 3 E 10A 600V VCE(sat)( )=1.65V@ IC=10A

RU3030M2 N-Channel Advanced Power MOSFET Features Pin Description 30V/30A, RDS (ON) =10m (Typ.)@VGS=10V D D D RDS (ON) =15m (Typ.)@VGS=4.5V D Super High Dense Cell Design Fast Switching Speed Low gate Charge 100% avalanche tested G S S S Lead Free and Green Devices Available (RoHS Compliant) PIN1 PIN1 PDFN3333 D Applications Switching Applic

RU30E60M2 N-Channel Advanced Power MOSFET Features Pin Description 30V/60A, RDS (ON) =3m (Typ.)@VGS=10V D D D RDS (ON) =6m (Typ.)@VGS=4.5V D Super High Dense Cell Design Ulta Low On-Resistance ESD Protected(Rating 4KV HBM) Fast Switching Speed G S S S 100% avalanche tested PIN1 Lead Free and Green Devices Available (RoHS Compliant) PIN1 PDFN33

RUH4040M2 N-Channel Advanced Power MOSFET Features Pin Description 40V/40A, RDS (ON) =5.5m (Typ.)@VGS=10V D D D D RDS (ON) =8m (Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche tested G Lead Free and Green Devices Available (RoHS Compliant) S S S PIN1 PIN1 PDFN3333 D Applications DC/DC Converters On board power for

RUH3051M2 N-Channel Advanced Power MOSFET Features Pin Description 30V/50A, RDS (ON) =4.2m (Typ.)@VGS=10V D D D D RDS (ON) =6m (Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche tested G Lead Free and Green Devices Available (RoHS Compliant) S S S PIN1 PIN1 PDFN3333 D Applications DC/DC Converters On board power for

RU30D20M2 N-Channel Advanced Power MOSFET Features Pin Description 30V/20A, RDS (ON) =8.5m (Typ.)@VGS=10V D2D2 D1D1 RDS (ON) =11.5m (Typ.)@VGS=4.5V Super High Dense Cell Design Fast Switching Speed Low gate Charge G2 100% avalanche tested S1G1S2 Lead Free and Green Devices Available (RoHS Compliant) PIN1 PIN1 PDFN3333 D1 D2 Applications Switchi

RU3040M2 N-Channel Advanced Power MOSFET Features Pin Description 30V/40A, RDS (ON) =5.8m (Typ.)@VGS=10V D D D RDS (ON) =8.2m (Typ.)@VGS=4.5V D RDS (ON) =16.8m (Typ.) @VGS=2.5V Super High Dense Cell Design Fast Switching Speed Low gate Charge G S S S 100% avalanche tested PIN1 Lead Free and Green Devices Available (RoHS Compliant) PIN1 PDFN3333 D

RUQ4040M2 N-Channel Advanced Power MOSFET Features Pin Description 40V/40A, RDS (ON) =5m (Typ.)@VGS=10V D D D D RDS (ON) =6.5m (Typ.)@VGS=4.5V AEC-Q101 Qualified for Automotive Applications Ultra Low On-Resistance Uses Ruichips Advanced RUISGTTM Technology 100% Avalanche Tested G S S Lead Free and Green Devices (RoHS Compliant) S PIN1 PDFN3333 D

AiT Semiconductor Inc. AM2304 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES AM2304 is available in a SOT-23 package. 30V/5.1A R = 25m (max.) @ V = 10V DS(ON) GS R = 35m (max.) @ V = 4.5V DS(ON) GS Reliable and Rugged Available in a SOT-23 package. ORDERING INFORMATION APPLICATION Power Management in Notebook Computer, Por

AiT Semiconductor Inc. AM2N7002 www.ait-ic.com SMALL SIGNAL MOSFET 115mA, 60 VOLTS N-CHANNEL MOSFET DESCRIPTION FEATURES Available in SOT-23 and SC70-3 packages. ESD Protected 1000V Available in SOT-23 and SC70-3 packages ORDERING INFORMATION N CHANNEL MOSFET Package Type Part Number AM2N7002E3R SOT-23 E3 AM2N7002E3VR SC70-3 AM2N7002C3R C3 (SOT-323) AM2N7002C3

AiT Semiconductor Inc. AM2303 www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM2303 is the P-Channel logic enhancement -30V/-4.3A, R =50m (typ.)@V =-10V DS(ON) GS mode power field effect transistor is produced using -30V/-3.5A, R =58m (typ.)@V =-4.5V DS(ON) GS high cell density. advanced trench technology to -30V/-2.5A, R =73m (typ.

AiT Semiconductor Inc. AM2301 www.ait-ic.com MOSFET -20V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM2301 is the P-Channel logic enhancement -20V/-3.2A, R =90m (typ.)@V =-4.5V DS(ON) GS mode power field effect transistor is produced using -20V/-2.0A, R =130m (typ.)@V =-2.5V DS(ON) GS high cell density. Advanced trench technology to Super high density cell de

AiT Semiconductor Inc. AM2305 www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM2305 is the P-Channel logic enhancement -30V/-4A, R = 55m @V = -10V DS(ON) GS mode power field effect transistor is produced using -30V/-3A, R = 64m @V = -4.5V DS(ON) GS high cell density. Advanced trench technology to -30V/-2A, R = 85m @V = -2.5V DS(ON)

AiT Semiconductor Inc. AM2N7002K www.ait-ic.com MOSFET SMALL SIGNAL MOSFET 380mA, 60 VOLTS DESCRIPTION FEATURES The AM2N7002K is available in SOT-23 Package ESD Protected Low R DS(ON) Surface Mount Package RoHS Compliant Available in SOT-23 package ORDERING INFORMATION APPLICATION Low Side Load Switch Package Type Part Number Level Shift Circ

AiT Semiconductor Inc. AM2319 www.ait-ic.com MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES AM2319 is available in a SOT-23S package. -40V/-3A, R = 80m (max.) @ V = -10V DS(ON) GS R = 120m (max.) @ V = -4.5V DS(ON) GS Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Available in a SOT-23S package. ORDERING INFORM

AiT Semiconductor Inc. AM2306 www.ait-ic.com -30V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM2306 is the N-Channel logic enhancement -30V/3.6A, R = 45m (typ.)@V = 10V DS(ON) GS mode power field effect transistor is produced using 30V/2.8A, R = 55m (typ.)@V = 4.5V DS(ON) GS high cell density. Advanced trench technology to Super high density cell desi

AiT Semiconductor Inc. AM2N7002DW www.ait-ic.com N-CHANNEL MOSFET SMALL SIGNAL MOSFET 115mA, 60 VOLTS DESCRIPTION FEATURES Available in SOT-363 package. ESD Protected 1000V Available in SOT-363 package ORDERING INFORMATION N CHANNEL MOSFET Package Type Part Number SOT-363 AM2N7002DWC6R C6 (SC70-6) AM2N7002DWC6VR V Halogen free Package Note R Tape & Reel SPQ

AM2317 AiT Semiconductor Inc. www.ait-ic.com MOSFET -20V P-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM2317 is the P-Channel logic enhancement -20V/-4.6A, R =35m (typ.)@V =-4.5V DS(ON) GS mode power field effect transistor is produced using -20V/-4.1A,R =45m (typ.)@V =-2.5V DS(ON) GS high cell density advanced trench technology. -20V/-3.6A,R =53m (t

AiT Semiconductor Inc. AM2342 www.ait-ic.com MOSFET 20V N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM2342 is the N-Channel logic enhancement 20V/5.0A, R =25m (typ.)@V =4.5V DS(ON) GS mode power field effect transistor is produced using 20V/4.5A, R =34m (typ.)@V =2.5V DS(ON) GS high cell density. Advanced trench technology to 20V/4.0A, R =48m (typ.)@V =1.8

AiT Semiconductor Inc. AM2308 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES AM2308 is available in a SOT-23 package. 60V/2.7A, R = 104m (max.) @ V = 10V DS(ON) GS R = 130m (max.) @ V = 4.5V DS(ON) GS Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Available in a SOT-23 package. ORDERING INFORMATI

AiT Semiconductor Inc. AM2300 www.ait-ic.com MOSFET 20V N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM2300 is the N-Channel logic enhancement 20V/4.0A, R =26m (typ.)@V =4.5V DS(ON) GS mode power field effect transistor is produced using 20V/3.0A, R =31m (typ.)@V =2.5V DS(ON) GS high cell density. Advanced trench technology to 20V/2.0A, R =44m (typ.)@V =1.8

AiT Semiconductor Inc. AM2N7002W www.ait-ic.com N-CHANNEL MOSFET SMALL SIGNAL MOSFET 115mA, 60 VOLTS DESCRIPTION FEATURES Available in SOT-323 package. ESD Protected 1000V Available in SOT-323 package ORDERING INFORMATION N CHANNEL MOSFET Package Type Part Number SOT-323 AM2N702WC3R C3 (SC70-3) AM2N702WC3VR V Halogen free Package Note R Tape & Reel SPQ 3,0

Pb Free Product BLM2302 N-Channel Enhancement Mode Power MOSFET DESCRIPTION D The BLM2302 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES V = 20V,I = 2.9A D

Green Product BLM22N10 100V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM22N10 uses advanced trench technology to provide V = 100V,I = 50A DS D excellent R , low gate charge. It can be used in a wide R

ROHS Product BLM2010E N-Channel Enhancement Mode Power MOSFET Description The BLM2010E uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features V = 20V,I =7A DS D Typ.R

Pb Free Product BLM2301 P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The BLM2301 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S GENERAL FEATURES Schematic diagram V = -20V,I = -3A DS D R

Pb Free Product BLM2305 P-Channel Enhancement Mode Power MOSFET Description D The BLM2305 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features V = -20V,I = -4.2A DS D RDS(ON)

CHENMKO ENTERPRISE CO.,LTD CHM2313QGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4.6 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-74/SOT-457 FEATURE * Small flat package. (SC-74/SOT-457) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (1) (6)

CHENMKO ENTERPRISE CO.,LTD CHM2316GP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4.8 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (2) * High sat

CHENMKO ENTERPRISE CO.,LTD CHM2082JGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 11 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super High density cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * High satu

CHENMKO ENTERPRISE CO.,LTD CHM2407JGP SURFACE MOUNT Dual P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 5.3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * High

CHENMKO ENTERPRISE CO.,LTD CHM2316QGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 6 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-74/SOT-457 FEATURE * Small flat package. (SC-74/SOT-457) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (1) (6) *

CHENMKO ENTERPRISE CO.,LTD CHM20P06PAGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 13 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small flat package. ( TO-252 ) * High density cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * Rugged

CHENMKO ENTERPRISE CO.,LTD CHM2304GP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 2.8 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (2) * High sat

CHENMKO ENTERPRISE CO.,LTD CHM2301ESGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 2.8 Ampere APPLICATION * Po rtable * High speed switch FEATURE SOT-23 * Small surface mounting type. (SOT-23) * High density cell design for low RDS(ON) * Suitable for high packing density. * Rugged and reliable. (1) * High saturation current capabili

CHENMKO ENTERPRISE CO.,LTD CHM25N15LPAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 150 Volts CURRENT 25 Ampere APPLICATION * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High power and current handing capa

CHENMKO ENTERPRISE CO.,LTD CHM2331GP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 4.2 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (2) * High sat

CHENMKO ENTERPRISE CO.,LTD CHM21A2PAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 20 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High power

CHENMKO ENTERPRISE CO.,LTD CHM21A3PAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 20 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High power

CHENMKO ENTERPRISE CO.,LTD CHM2331QGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 4.2 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-74/SOT-457 FEATURE * Small flat package. (SC-74/SOT-457) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (1) (6)

CHENMKO ENTERPRISE CO.,LTD CHM2362GP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (2) * High satur

CHENMKO ENTERPRISE CO.,LTD CHM2310GP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4.8 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturati

CHENMKO ENTERPRISE CO.,LTD CHM2314GP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (2) * High satur

CHENMKO ENTERPRISE CO.,LTD CHM2703QGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 7 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-74/SOT-457 FEATURE * Small flat package. (SC-74/SOT-457) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (1) (6) *

CHENMKO ENTERPRISE CO.,LTD CHM2108JGP SURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 9.5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * High density cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * Rugged an

CHENMKO ENTERPRISE CO.,LTD CHM210BGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 100 Volts CURRENT 1.3 Ampere APPLICATION * Servo motor control. * Other switching applications. SC-59/SOT-346 FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (2) * High saturation current capability. (3)

CHENMKO ENTERPRISE CO.,LTD CHM2313GP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 3.6 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (2) * High sat

CHENMKO ENTERPRISE CO.,LTD CHM2321GP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 3.8 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (2) (3) 0.95

CHENMKO ENTERPRISE CO.,LTD CHM2323GP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4.1 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (2) * High sat

CHENMKO ENTERPRISE CO.,LTD CHM2401JGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 6 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * High power a

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT CHM2030JGP Dual Enhancement Mode Field Effect Transistor N-channel VOLTAGE 20 Volts CURRENT 6 Ampere P-channel VOLTAGE 20 Volts CURRENT 4.3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low R

CHENMKO ENTERPRISE CO.,LTD CHM2313GP-A SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 3.6 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (2) * High s

CHENMKO ENTERPRISE CO.,LTD CHM2346ESGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 2.9 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (2) * High satu

CHENMKO ENTERPRISE CO.,LTD CHM2308ESGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 5.4 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (2) * High s

CHENMKO ENTERPRISE CO.,LTD CHM2307GP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 3.2 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (2) * High sat

CHENMKO ENTERPRISE CO.,LTD CHM20N06PAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 20 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High power

CHENMKO ENTERPRISE CO.,LTD CHM2305GP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (2) * High satur

CHENMKO ENTERPRISE CO.,LTD CHM2342GP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts CURRENT 4.2 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (2) * High sat

CTM2N7002 Crownpo Technology Small Signal MOSFET Features General Description High Density Cell Design for Low RDS(ON) This N-Channel enhancement mode field effect transistor Voltage Controlled Small Signal Switch is produced using high cell density,DMOS technology.These Rugged and Reliable products have been designed to minimize on-state High Saturation Current Capability resistance

DM2G75SH6A July. 2010 High Power NPT & Rugged IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT module devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives and other applications where switching losses are sign

Preliminary D WTM D WTM Apr. 2008 DM2G150SH12A DAWIN Electronics DAWIN Electronics High Power SPT+ & Lugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power

Preliminary DM2G100SH12A Apr. 2008 High Power SPT+ & Lugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power inverters, motors drives and other applications wh

DM2G300SH6A Aug. 2009 High Power NPT & Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-3 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives and other applications where switching los

DM2G100SH6N Jan. 2012 High Power Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT module devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives and other applications where switching losses are sign

D WTM D WTM DM2G150SH6N DAWIN Electronics DAWIN Electronics Jan. 2012 High Power Rugged Type IGBT Module Equivalent Circuit and Package Description DAWIN S IGBT 7DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors dri

Preliminary D WTM D WTM DAWIN Electronics DAWIN Electronics DM2G150SH12AE Dec. 2008 High Power SPT+ & Lugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power

D WTM D WTM DM2G200SH6A DAWIN Electronics DAWIN Electronics Aug. 2009 High Power NPT & Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, moto

D WTM D WTM DM2G150SH6A DAWIN Electronics DAWIN Electronics Aug. 2009 High Power NPT & Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, moto

Preliminary D WTM D WTM DAWIN Electronics DAWIN Electronics DM2G200SH12AE Dec. 2008 High Power SPT+ & Lugged Type IGBT Module Description Equivalent Circuit and Package Equivalent Circuit and Package DAWIN S IGBT 7DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modul

D WTM D WTM DM2G200SH6N DAWIN Electronics DAWIN Electronics Jan. 2012 High Power Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power inverters, motors drive

DM2G400SH6A Aug. 2009 High Power NPT & Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-3 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives and other applications where switching los

DM2G400SH6N Jan. 2012 High Power Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-3 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives and other applications where switching losses ar

DM2G50SH6A Apr. 2008 High Power NPT & Lugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT module devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power inverters, motors drives and other applications where switching losses are

D WTM D WTM DM2G300SH6NE DAWIN Electronics DAWIN Electronics Jan. 2012 High Power Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors dri

DM2G50SH6N Jan. 2012 High Power Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT module devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives and other applications where switching losses are signif

Preliminary D WTM D WTM DM2G300SH12A DAWIN Electronics DAWIN Electronics Mar. 2008 High Power SPT+ & Lugged Type IGBT Module Description Equivalent Circuit and Package Equivalent Circuit and Package DAWIN S IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modul

DM2G100SH6A July. 2010 High Power NPT & Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT module devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives and other applications where switching losses ar

D WTM D WTM DM2G150SH6NE DAWIN Electronics DAWIN Electronics Jan. 2012 High Power Rugged Type IGBT Module Equivalent Circuit and Package Description DAWIN S IGBT module devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives 6

DM2G75SH6N Jan. 2012 High Power Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT module devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives and other applications where switching losses are signif

Preliminary D WTM D WTM Mar. 2008 DM2G200SH12A DAWIN Electronics DAWIN Electronics High Power SPT+ & Lugged Type IGBT Module High Power SPT+ & Lugged Type IGBT Module Description Equivalent Circuit and Package Equivalent Circuit and Package DAWIN S IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical syste

DM2G50SH12A Mar. 2008 High Power SPT+ & Lugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-1 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power inverters, motors drives and other applications where switching

Mar. 2008 DM2G75SH12A DM2G75SH12A High Power SPT+ & Lugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-1 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power inverters, motors drives and other applications whe

DIM2400ESS12-A000 Single Switch IGBT Module Replaces DS5840-1.1 DS5840-2 October 2010 (LN27616) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V Non Punch Through Silicon IC (max) 2400A Isolated Cu Base with Al2O3 Substrates IC(PK) (max) 4800A Lead Free construction * Measured at the power busbars, not the auxiliary

DIM200PHM33-F000 Half Bridge IGBT Module Replaces DS5606-4 DS5606-5 October 2011 (LN28814) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.8V High Thermal Cycling Capability IC (max) 200A Soft Punch Through Silicon IC(PK) (max) 400A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals Le

DIM200PKM33-F000 IGBT Chopper Module Replaces DS5865-2 DS5865-3 October 2011 (LN28813) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.8V High Thermal Cycling Capability IC (max) 200A Soft Punch Through Silicon IC(PK) (max) 400A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals Lead F

DIM250PKM33-TS000 IGBT Chopper Module Replaces DS6106-1 DS6106-2 July 2013 (LN30763) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 250A High Current Density Enhanced DMOS SPT IC(PK) (max) 500A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals

DIM250PLM33-TL000 IGBT Chopper Module DS6115-1 July 2013 (LN30664) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10 s Short Circuit Withstand IC (max) 250A High Thermal Cycling Capability IC(PK) (max) 500A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base with AlN Subs

DIM250PKM33-TL000 IGBT Chopper Module DS6117-1 July 2013 (LN30666) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10 s Short Circuit Withstand IC (max) 250A High Thermal Cycling Capability IC(PK) (max) 500A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base with AlN Subs

DIM250PHM33-TL000 Half Bridge IGBT Module DS6116-1 July 2013 (LN30665) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10 s Short Circuit Withstand IC (max) 250A High Thermal Cycling Capability IC(PK) (max) 500A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base with AlN

DIM250PHM33-TS000 Half Bridge IGBT Module DS6092-1 April 2013 (LN30402) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 250A High Current Density Enhanced DMOS SPT IC(PK) (max) 500A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals APPLICATIONS

DIM2400ESM17-A000 Single Switch IGBT Module Replaces DS54447-5 DS5447-6 June 2012 (LN29603) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 1700V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 2400A Non Punch Through Silicon IC(PK) (max) 4800A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the aux

DIM250PLM33-TS000 IGBT Chopper Module Replaces DS6108-1 DS6108-2 July 2013 (LN30764) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 250A High Current Density Enhanced DMOS SPT IC(PK) (max) 500A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals

DIM2400ESM12-A000 Single Switch IGBT Module Replaces DS5536-3.0 DS5536-4 October 2010 (LN27615) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 2400A Non Punch Through Silicon IC(PK) (max) 4800A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the

DIM200PLM33-F000 IGBT Chopper Module Replaces DS5864-2 DS5864-3 October 2011 (LN28812) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.8V High Thermal Cycling Capability IC (max) 200A Soft Punch Through Silicon IC(PK) (max) 400A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals Lead F

Complementary MOSFET ELM24604HA-S General Description Features ELM24604HA-S uses advanced trench N-channel P-channel technology to provide excellent Rds(on) Vds=40V Vds=-40V and low gate charge. Id=8A(Vgs=10V) Id=-8A(Vgs=-10V) Rds(on)

Complementary MOSFET ELM24603HA-S General Description Features ELM24603HA-S uses advanced trench N-channel P-channel technology to provide excellent Rds(on) Vds=60V Vds=-60V and low gate charge. Id=12A(Vgs=10V) Id=-12A(Vgs=-10V) Rds(on)

GSM2317 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM2317, P-Channel enhancement mode -40V/-3.6A,RDS(ON)=52m @VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-3.2A,RDS(ON)=67m @VGS=-4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited f

GSM2319AS 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM2319AS, P-Channel enhancement mode -40V/-3.0A,RDS(ON)=90m @VGS=-10V MOSFET, uses Advanced Trench -40V/-2.4A,RDS(ON)=120m @VGS=-4.5V Technology to provide excellent RDS(ON), low Super high density cell design for gate charge. extremely low RDS (ON) Exceptional on-resistance and Thes

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2311, P-Channel enhancement mode -20V/-4.0A,RDS(ON)=56m @VGS=4.5V MOSFET, uses Advanced Trench -20V/-3.2A,RDS(ON)=70m @VGS=2.5V Technology to provide excellent RDS(ON), low -20V/-2.8A,RDS(ON)=96m @VGS=1.8V gate charge. Super high density cell design for These devices are particularly suited f

GSM2519 GSM2519 20V N&P Pair Enhancement Mode MOSFET Product Description Features GSM2519, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 20V/4.5A,RDS(ON)=50m @VGS=4.5V provide excellent RDS(ON), low gate charge. 20V/3.6A,RDS(ON)=60m @VGS=2.5V 20V/2.4A,RDS(ON)=80m @VGS=1.8V These devices are particularly suited for low P-Channel voltage

GSM2912 GSM2912 20V N-CH Enhancement Mode MOSFET Product Description Features GSM2912, N-Channel enhancement mode 20V/4.5A,RDS(ON)=50m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.6A,RDS(ON)=60m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.4A,RDS(ON)=78m @VGS=1.8V Super high density cell design for extremely These devices are particula

GSM2336A 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2336A, N-Channel enhancement mode 30V/1.8A,RDS(ON)=380m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 30V/1.5A,RDS(ON)=480m @VGS=2.5V provide excellent RDS(ON), low gate charge. 30V/1.2A,RDS(ON)=900m @VGS=1.8V Super high density cell design for extremely These devices are p

GSM2324 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM2324, N-Channel enhancement mode 100V/2.3A,RDS(ON)=285m @VGS=10V MOSFET, uses Advanced Trench Technology 100V/1.8A,RDS(ON)=295m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for lo

GSM2303A GSM2303A 30V P-Channel Enhancement Mode MOSFET Product Description Features -30V/-2.8A,RDS(ON)=145m @VGS=-10.0V GSM2303A, P-Channel enhancement mode -30V/-2.4A,RDS(ON)=180m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-res

GSM2323 GSM2323 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM2323, P-Channel enhancement mode -30V/-3.6A,RDS(ON)=150m @VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-3.2A,RDS(ON)=235m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited fo

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301AS, P-Channel enhancement mode -20V/-2.4A,RDS(ON)=125m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.0A,RDS(ON)=170m @VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low voltage

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2367AS, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=80m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.5A,RDS(ON)=98m @VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-2.2A,RDS(ON)=130m @VGS=-1.8V These devices are particularly suited for low Super high density cell

GSM2304A 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304A, N-Channel enhancement mode 30V/2.6A,RDS(ON)=82m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=108m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low Exce

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2302AS, N-Channel enhancement mode 20V/2.4A,RDS(ON)=90m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/2.0A,RDS(ON)=110m @VGS=2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low Exceptional on-

GSM2330A 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM2330A, N-Channel enhancement mode 90V/2.8A,RDS(ON)=200m @VGS=10V MOSFET, uses Advanced Trench Technology 90V/2.0A,RDS(ON)=210m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

GSM2333A GSM2333A 25V P-Channel Enhancement Mode MOSFET Product Description Features -25V/-2.8A,RDS(ON)=145m @VGS=-10V GSM2333A, P-Channel enhancement mode -25V/-2.4A,RDS(ON)=180m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-resis

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301S, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=120m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.0A,RDS(ON)=170m @VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for These devices are particularly suited for low extremely low RDS (ON) volt

P-Channel Enhancement Mode MOSFET Product Description Features GSM2341, P-Channel enhancement mode -20V/-3.0A,RDS(ON)= 50m @VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.6A,RDS(ON)= 64m @VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.0A,RDS(ON)= 80m @VGS=-1.8V Super high density cell design for extremely These devices are particularly suited

GSM2911 GSM2911 20V P-CH Enhancement Mode MOSFET Product Description Features GSM2911, P-Channel enhancement mode P-Channel MOSFET, uses Advanced Trench Technology to -20V/-4.5A,RDS(ON)= 96m @VGS=-4.5V provide excellent RDS(ON), low gate charge. These -20V/-3.8A,RDS(ON)=128m @VGS=-2.5V devices are particularly suited for low voltage -20V/-2.5A,RDS(ON)=180m @VGS=-1.8V po

40V N-Channel Enhancement Mode MOSFET Product Description Features GSM2604, N-Channel enhancement mode 40V/20A,RDS(ON)= 22m @VGS=10V MOSFET, uses Advanced Trench Technology to 40V/12A,RDS(ON)= 40m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

GSM2309A 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM2309A, P-Channel enhancement mode -60V/-1.8A,RDS(ON)=305m @VGS=-10V MOSFET, uses Advanced Trench -60V/-1.6A,RDS(ON)=320m @VGS=-4.5V Technology to provide excellent RDS(ON), low Super high density cell design for gate charge. extremely low RDS (ON) Exceptional on-resistance and maxim

GSM2309 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM2309, P-Channel enhancement mode -60V/-1.8A,RDS(ON)=305m @VGS=-10V MOSFET, uses Advanced Trench -60V/-1.4A,RDS(ON)=320m @VGS=-4.5V Technology to provide excellent RDS(ON), low Super high density cell design for gate charge. extremely low RDS (ON) Exceptional on-resistance and maximum

GSM2354 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM2354, N-Channel enhancement mode 100V/3.2A,RDS(ON)=145m @VGS=10V MOSFET, uses Advanced Trench Technology to 100V/2.6A,RDS(ON)=160m @VGS=4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

GSM2318A 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM2318A, N-Channel enhancement mode 40V/2.6A,RDS(ON)=68m @VGS=10V MOSFET, uses Advanced Trench 40V/2.2A,RDS(ON)=88m @VGS=4.5V Technology to provide excellent RDS(ON), low Super high density cell design for gate charge. extremely low RDS (ON) These devices are particularly suited for low

20V P-Channel Enhancement Mode MOSFET Product Description Features -20V/-2.6A,RDS(ON)=120m @VGS=-4.5V GSM2301A, P-Channel enhancement mode -20V/-2.2A,RDS(ON)=170m @VGS=-2.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) These devices are particularly suited for low

GSM2337A GSM2337A 30V P-Channel Enhancement Mode MOSFET Product Description Features -30V/-1.2A,RDS(ON)=890m @VGS=-10V GSM2337A, P-Channel enhancement mode -30V/-0.6A,RDS(ON)=1450m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-resi