Биполярный транзистор M2 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: M2
Тип материала: Ge
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 25 V
Макcимальный постоянный ток коллектора (Ic): 0.012 A
Предельная температура PN-перехода (Tj): 75 °C
Ёмкость коллекторного перехода (Cc): 1.4 pf
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора: CAN
M2 Datasheet (PDF)
dmp22m2ups-13.pdf
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DMP22M2UPS Green20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package Cooler Running Applications BVDSS RDS(ON) max TC = +25C High Conversion Efficiency Low RDS(ON) Minimizes On State Losses 2.5m @ VGS = -10V -60A -20V
bm2300.pdf
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BM2300 N Channel Enhancement Mode MOSFET 4A DESCRIPTION The BM2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook
irf6723m2d.pdf
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PD - 97441IRF6723M2DTRPbFIRF6723M2DTR1PbFApplicationsl Dual Common Drain Control MOSFETs forDirectFET Power MOSFET Multiphase DC-DC Converters Typical values (unless otherwise specified)FeaturesVDSS VGS RDS(on) RDS(on) l Replaces Two Discrete MOSFETs30V max 20V max 5.2m@ 10V 8.6m@ 4.5Vl Optimized for High Frequency Switchingl Low Profile (
hm25p06d.pdf
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HM25P06DP-Channel Enhancement Mode Power MOSFET Description The HM25P06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-25A RDS(ON)
jsm2622.pdf
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JSM2622N-Channel Enhancement Mode Power MOSFET N-Channel Enhancement Mode Power MOSFET DDescription The JSM2622 uses advanced trench technology to Gprovide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. SGeneral Features Schematic diagram VDS = 20V,ID = 50A RDS(ON) Typ =4.5m@ VGS=10V 18RDS(ON) =5.0m@ VGS=4.5V Typ
jsm2050.pdf
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N-Channel Enhancement Mode Power MOSFET DDescription The JSM2050 uses advanced trench technology to Gprovide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. SGeneral Features Schematic diagram VDS = 20V,ID = 50A RDS(ON)
irf6702m2d.pdf
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PD - 97540IRF6702M2DTRPbFIRF6702M2DTR1PbFApplicationsl Dual Common Drain Control MOSFETs forDirectFET Power MOSFET Multiphase DC-DC Converters Typical values (unless otherwise specified)FeaturesVDSS VGS RDS(on) RDS(on) l Replaces Two discrete high side MOSFETs30V max 20V max 5.2m@ 10V 8.6m@ 4.5Vl Optimized for High Frequency Switchingl Low Profile (
mhpm2a400.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MHPM2A400A60M/DMHPM2A400A60MPreliminary Data SheetHybrid Power ModuleHigh Current IGBT Module400 AMP, 600 VOLT HYBRID POWER MODULE 400 Amp, 600 Volt IGBT HalfBridge Low OnVoltage, High Speed IGBTs Excellent Short Circuit Capability Fast Soft Recovery Diodes Low Inductance PackageM6 bolts
irhm2c50se.pdf
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PD - 91252AREPETITIVE AVALANCHE AND dv/dt RATED IRHM2C50SEIRHM7C50SEHEXFET TRANSISTORN-CHANNELSINGLE EVENT EFFECT (SEE) RAD HARDProduct Summary600Volt, 0.6, (SEE) RAD HARD HEXFETPart Number BVDSS RDS(on) IDInternational Rectifiers (SEE) RAD HARD technologyIRHM2C50SE 600V 0.60 10.4AHEXFETs demonstrate immunity to SEE failure. Ad-ditionally,
auirl7766m2tr.pdf
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PD - 97648AUIRL7766M2TRAUTOMOTIVE GRADEAUIRL7766M2TR1 Automotive DirectFET Power MOSFET V(BR)DSS100V Advanced Process Technology Optimized for Automotive DC-DC andRDS(on) typ.8.0mother Heavy Load Applicationsmax. Logic Level Gate Drive 10m Exceptionally Small Footprint and Low ProfileID (Silicon Limited)51A High Power DensityQg 44nC
irfm260.pdf
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PD - 91388CIRFM260POWER MOSFET 200V, N-CHANNELTHRU-HOLE (TO-254AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) IDIRFM260 0.060 35A*HEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry design achieves very low on-state resistance combined with high transconductance. TO-254
irfm240.pdf
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PD - 90555DIRFM240JANTX2N7219JANTXV2N7219POWER MOSFETREF:MIL-PRF-19500/596THRU-HOLE (TO-254AA) 200V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFM240 0.18 18AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-si
irfm250.pdf
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PD - 90554EIRFM250JANTX2N7225JANTXV2N7225POWER MOSFETREF:MIL-PRF-19500/592THRU-HOLE (TO-254AA) 200V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFM250 0.100 27.4AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-
auirl7736m2tr.pdf
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PD - 97656AUTOMOTIVE GRADEAUIRL7736M2TRAUIRL7736M2TR1DirectFET Power MOSFET Logic LevelV(BR)DSS40V Advanced Process Technology Optimized for Automotive DC-DC, Motor Drive andRDS(on) typ.2.2m other Heavy Load Applicationsmax. 3.0m Exceptionally Small Footprint and Low Profile High Power DensityID (Silicon Limited)112A Low Parasitic
auirf7648m2tr1.pdf
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PD - 96317BAUIRF7648M2TRAUTOMOTIVE GRADEAUIRF7648M2TR1 Automotive DirectFET Power MOSFET V(BR)DSS60V Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC andRDS(on) typ.5.5mother Heavy Load Applicationsmax. 7.0m Exceptionally Small Footprint and Low Profile High Power DensityID (Silicon Limited)68A Low Parasitic Para
auirf7675m2tr.pdf
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PD -97552AUIRF7675M2TRAUTOMOTIVE GRADEAUIRF7675M2TR1DirectFET Power MOSFET Advanced Process TechnologyV(BR)DSS Optimized for Class D Audio Amplifier Applications 150V Low Rds(on) for Improved EfficiencyRDS(on) typ.47m Low Qg for Better THD and Improved Efficiencymax. 56m Low Qrr for Better THD and Lower EMIRG (typical)1.2 Low Parasitic In
auirf7736m2tr1.pdf
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PD - 96316BAUIRF7736M2TRAUTOMOTIVE GRADEAUIRF7736M2TR1 Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS40V Optimized for Automotive Motor Drive, DC-DC andRDS(on) typ.2.5mother Heavy Load Applications Exceptionally Small Footprint and Low Profile max. 3.0m High Power DensityID (Silicon Limited)108A Low Parasitic Param
auirf8736m2.pdf
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AUTOMOTIVE GRADE AUIRF8736M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 1.3m other Heavy Load Applications max. 1.9m Exceptionally Small Footprint and Low Profile High Power Density ID (Silicon Limited) 137A Low Parasitic Paramete
phm21nq15t.pdf
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PHM21NQ15TTrenchMOS standard level FETRev. 02 11 September 2003 Product dataM3D8791. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features SOT96 (SO8) footprint compatible Low thermal resistance Surface mounted package Low profile.1.3 Applications DC-to-DC primary side Portab
buk1m200-50sgtd.pdf
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BUK1M200-50SGTDQuad channel logic level TOPFETRev. 01 31 March 2003 Product data1. Product profile1.1 DescriptionQuad temperature and overload protected power switch based on TOPFET Trenchtechnology in a 20-pin surface mount plastic package.Product availability:BUK1M200-50SGTD in SOT163-1 (SO20).1.2 Features Power TrenchMOS 5V logic compatible Overtemperature pro
phm25nq10t.pdf
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PHM25NQ10TTrenchMOS standard level FETRev. 03 11 September 2003 Product dataM3D8791. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features SOT96 (SO-8) footprint compatible Low thermal resistance Surface mounted package Low profile.1.3 Applications DC-to-DC primary side Porta
buk1m200 50sdld.pdf
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BUK1M200-50SDLDQuad channel TOPFETRev. 01 02 April 2003 Product data1. Product profile1.1 DescriptionQuad temperature and overload protected logic level power MOSFET in TOPFETtechnology in a 20-pin surface mount plastic package.Product availability:BUK1M200-50SDLD in SOT163-1 (SO20).1.2 Features Power TrenchMOS 5 V logic compatible input level Overtemperature
stu9hn65m2.pdf
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STU9HN65M2 N-channel 600 V, 0.71 typ., 5.5 A MDmesh M2 Power MOSFET in an IPAK package Datasheet - production data Features Order code V R max. I DS DS(on) DTABSTU9HN65M2 600 V 0.82 5.5 A Extremely low gate charge 32 Excellent output capacitance (COSS) profile 1 100% avalanche tested Zener-protected IPAKApplications Switching applic
stb37n60dm2ag.pdf
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STB37N60DM2AG Automotive-grade N-channel 600 V, 0.094 typ., 28 A MDmesh DM2 Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT TABSTB37N60DM2AG 600 V 0.110 28 A 210 W Designed for automotive applications and 3 AEC-Q101 qualified 1 Fast-recovery body diode Extremely low gate charge and input capa
stl16n65m2.pdf
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STL16N65M2N-channel 650 V, 0.325 typ., 7.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - production dataFeaturesOrder code VDS @ TJmax RDS(on) max IDSTL16N65M2 710 V 0.395 7.5 A Extremely low gate charge1 Excellent output capacitance (Coss) profile 234 100% avalanche tested Zener-protectedPowerFLAT 5x6 HVApplications
std7n65m2.pdf
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STD7N65M2N-channel 650 V, 0.98 typ., 5 A MDmesh M2 Power MOSFET in a DPAK packageDatasheet - production dataFeaturesRDS(on) Order code VDS max IDTABSTD7N65M2 650 V 1.15 5 A3 Extremely low gate charge1 Excellent output capacitance (Coss) profile 100% avalanche testedDPAK Zener-protectedApplications Switching applicationsFigure 1. Inte
stf26n65dm2.pdf
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STF26N65DM2DatasheetN-channel 650 V, 0.156 typ., 20 A, MDmesh DM2 Power MOSFET in a TO-220FP packageFeaturesVDS RDS(on) max. ID PTOTOrder codeSTF26N65DM2 650 V 0.190 20 A 30 W Fast-recovery body diode Extremely low gate charge and input capacitance321 Low on-resistance 100% avalanche testedTO-220FP Extremely high dv/dt ruggednessD(2)
stl13n65m2.pdf
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STL13N65M2N-channel 650 V, 0.365 typ., 6.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTL13N65M2 650 V 0.475 6.5 A Extremely low gate charge Excellent output capacitance (COSS) profile 123 100% avalanche tested4 Zener-protectedPowerFLAT 5x6 HVApplications S
stl10n60m2.pdf
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STL10N60M2N-channel 600 V, 0.580 typ., 5.5 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - production dataFeaturesVDS @ Order codeTJmax RDS(on) max IDSTL10N60M2 650 V 0.660 5.5 A Extremely low gate charge123 Lower RDS(on) x area vs previous generation4 Low gate input resistancePowerFLAT 5x6 HV 100% aval
stf9hn65m2.pdf
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STF9HN65M2 N-channel 600 V, 0.71 typ., 5.5 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I DS DS(on) DSTF9HN65M2 600 V 0.82 5.5 A Extremely low gate charge Excellent output capacitance (COSS) profile 3 100% avalanche tested 2 Zener-protected 1Applications TO-220FP Switching appli
stp12n60m2.pdf
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STP12N60M2 N-channel 600 V, 0.395 typ., 9 A MDmesh M2 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTP12N60M2 600 V 0.450 9 A 85 W Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected Applications Switching applications F
stw56n65dm2.pdf
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STW56N65DM2 N-channel 650 V, 0.058 typ., 48 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features R DS(on)Order code V I P DS D TOTmax. STW56N65DM2 650 V 0.065 48 A 360 W Fast-recovery body diode 3 Extremely low gate charge and input 2capacitance 1 Low on-resistance 100% avalanche tested TO-247 Extre
stp7n65m2 stu7n65m2.pdf
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STP7N65M2, STU7N65M2 N-channel 650 V, 0.98 typ., 5 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packages Datasheet - production data Features TABR DS(on)Order code VDS ID max STP7N65M2 650 V 1.15 5 A 32 STU7N65M2 650 V 1.15 5 A TAB1TO-220 Extremely low gate charge 32 Excellent output capacitance (Coss) profile IPAK 1 100% avalanche
stp26n60m2 stw26n60m2.pdf
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STP26N60M2, STW26N60M2 N-channel 600 V, 0.14 typ., 20 A MDmesh M2 Power MOSFETs in TO-220 and TO-247 packages Datasheet - production data Features TABV @ R DS DS(on)Order code I P D TOTT max. JmaxSTP26N60M2 650 V 0.165 20 A 169 W STW26N60M2 33221 Extremely low gate charge 1 Excellent output capacitance (C ) profile OSS 100% avala
stb10n60m2 std10n60m2 stp10n60m2 stu10n60m2.pdf
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STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in DPAK, DPAK, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABTABRDS(on) 3 Order codes VDS @ TJmax max ID131DPAKSTB10N60M2D 2 PAKSTD10N60M2650 V 0.600 7.5 ASTP10N60M2TABTABSTU10N60M23 Extremely low gate ch
buh2m20.pdf
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BUH2M20APHIGH VOLTAGE NPN SILICONPOWER TRANSISTOR EXTRA HIGH VOLTAGE CAPABILITY LOW OUTPUT CAPACITANCE CHARACTERIZED FOR LINEAR MODEOPERATION.APPLICATIONS: DESIGNED SPECIFICALLY FOR DYNAMICFOCUS IN CTV AND MONITOR. 3DESCRIPTION 21The BUH2M20AP is manufactured usingMultiepitaxial Mesa technology for cost-effectiveTO-220high performance.INTERNAL SCHEMATIC D
stl16n60m2.pdf
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STL16N60M2 N-channel 600 V, 0.290 typ., 8 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features Order code V @ T R max. I DS Jmax DS(on) DSTL16N60M2 650 V 0.355 8 A Extremely low gate charge 1 Excellent output capacitance (COSS) profile 2 100% avalanche tested 34 Zener-protected Applications PowerFL
stl10n65m2.pdf
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STL10N65M2DatasheetN-channel 650 V, 0.85 typ., 4.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV packageFeaturesVDS RDS(on ) max. IDOrder codeSTL10N65M2 650 V 1.00 4.5 A12 Extremely low gate charge34 Excellent output capacitance (COSS) profilePowerFLAT 5x6 HV 100% avalanche tested Zener-protectedD(5, 6, 7, 8)8 7 6 5Applications Switch
std16n50m2 stf16n50m2 stp16n50m2.pdf
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STD16N50M2, STF16N50M2, STP16N50M2N-channel 500 V, 0.24 typ.,13 A, MDmesh M2 Power MOSFETs in DPAK, TO-220FP and TO-220 packagesDatasheet - preliminary dataFeaturesTAB3Order codes VDS @ TJmax RDS(on) max. ID1DPAKSTD16N50M2STF16N50M2 550 V 0.28 13 ASTP16N50M2TAB Extremely low gate charge Excellent output capacitance (Coss) profile3322 10
stf6n65m2 stp6n65m2 stu6n65m2.pdf
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STF6N65M2, STP6N65M2, STU6N65M2N-channel 650 V, 1.2 typ., 4 A MDmesh M2 Power MOSFETs in TO-220FP, TO-220 and IPAK packagesDatasheet - preliminary dataFeaturesTABOrder codes VDS RDS(on) max IDSTF6N65M23 3STP6N65M2 650 V 1.35 4 A2211STU6N65M2TO-220FP TO-220TAB Extremely low gate charge Excellent output capacitance (COSS) profile32 1
sti40n65m2 stp40n65m2.pdf
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STI40N65M2, STP40N65M2 N-channel 650 V, 0.087 typ., 32 A MDmesh M2 Power MOSFET in IPAK and TO-220 packages Datasheet - production data Features TAB TABOrder code V R max. I DS DS(on) DSTI40N65M2 650 V 0.099 32 A STP40N65M2 3 Extremely low gate charge 232 1 Excellent output capacitance (COSS) profile 1IPAK TO-220 100% avalanche tested
stw25n60m2-ep.pdf
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STW25N60M2-EPDatasheetN-channel 600 V, 0.175 typ., 18 A MDmesh M2 EP Power MOSFET in a TO-247 packageFeaturesVDS @ TJmax RDS(on) max. IDOrder codeSTW25N60M2-EP 650 V 0.188 18 A Extremely low gate charge3 Excellent output capacitance (COSS) profile21 Very low turn-off switching losses 100% avalanche testedTO-247 Zener-protectedD(2, TAB)
stw50n65dm2ag.pdf
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STW50N65DM2AG Automotive-grade N-channel 650 V, 0.070 typ., 38 A Power MOSFET MDmesh DM2 in a TO-247 package Datasheet - production data Features R DS(on)Order code V I P DS D TOTmax. STW50N65DM2AG 650 V 0.087 38 A 300 W AEC-Q101 qualified 3 Fast-recovery body diode 2 Extremely low gate charge and input 1capacitance Low on-resistance
stf33n60m2 sti33n60m2 stp33n60m2 stw33n60m2.pdf
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STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2N-channel 600 V, 0.108 typ., 26 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAK, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABVDS @ RDS(on) Order codes ID32 3TJmax max1212I PAKTO-220FPSTF33N60M2 26 A(1)TABSTI33N60M2650 V 0.125 STP33N60M2 26 ASTW33N60M233221
std12n60dm2ag.pdf
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STD12N60DM2AGDatasheet Automotive-grade N-channel 600 V, 380 m typ., 10 A MDmesh DM2 Power MOSFET in a DPAK packageFeaturesVDS @ TJmax RDS(on ) max. IDOrder codeTABSTD12N60DM2AG 650 V 430 m 10 A321DPAK AEC-Q101 qualified Fast-recovery body diode Extremely low gate charge and input capacitanceD(2, TAB) Low on-resistance 100% avalanche test
stb28n60m2 sti28n60m2 stp28n60m2 stw28n60m2.pdf
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STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2 N-channel 600 V, 0.135 typ., 22 A MDmesh M2 Power MOSFETs in DPAK, IPAK, TO-220 and TO-247 Datasheet - production data Features Order code V @ T R max. I DS Jmax DS(on) DSTB28N60M2 STI28N60M2 650 V 0.150 22 A STP28N60M2 STW28N60M2 Extremely low gate charge Excellent output capacitance (C ) profile
stw56n65m2.pdf
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STW56N65M2N-channel 650 V, 0.049 typ., 49 A MDmesh M2 Power MOSFET in a TO-247 packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTW56N65M2 650 V 0.062 49 A Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested32 Zener-protected1ApplicationsTO-247 Switching applicationsFigure
stw35n60dm2.pdf
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STW35N60DM2 N-channel 600 V, 0.094 typ., 28 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features R DS(on)Order code VDS ID PTOT max. STW35N60DM2 600 V 0.110 28 A 210 W Fast-recovery body diode 3 Extremely low gate charge and input 2capacitance 1 Low on-resistance 100% avalanche tested TO-247 Extremely
std22nm20nt4.pdf
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STD22NM20NN-CHANNEL 200V - 0.088 - 22A DPAKULTRA LOW GATE CHARGE MDmesh II MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) IDSTD22NM20N 200 V
stf6n60m2 stp6n60m2 stu6n60m2.pdf
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STF6N60M2, STP6N60M2, STU6N60M2N-channel 600 V, 1.06 typ., 4.5 A MDmesh II Plus low Qg Power MOSFET in TO-220FP, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABVDS @ RDS(on) 32 Order codes ID1TJmax maxIPAK3STF6N60M221STP6N60M2 650 V 1.2 4.5 ATO-220FP TABSTU6N60M2 Extremely low gate charge3 Lower RDS(on) x area vs previous
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STB28N65M2, STF28N65M2,STP28N65M2, STW28N65M2N-channel 650 V, 0.15 typ., 20 A MDmesh M2 Power MOSFETsin DPAK, TO-220FP, TO-220 and TO-247 packagesDatasheet - preliminary dataFeaturesTABOrder codes VDS RDS(on) max IDSTB28N65M233STF28N65M212650 V 0.18 20 A1STP28N65M2D2PAKTO-220FPSTW28N65M2TAB Extremely low gate charge Excellent output
stfi12n60m2.pdf
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STFI12N60M2 N-channel 600 V, 0.395 typ., 9 A MDmesh M2 Power MOSFET in an IPAKFP package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTFI12N60M2 600 V 0.450 9 A 25 W Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected Applications Switching application
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STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABTABOrder codes VDS @ TJmax RDS(on) max ID231STB24N60M2321D2PAKSTI24N60M2I2PAK650 V 0.19 18 ASTP24N60M2TABSTW24N60M2 Extremely low gate charge
stf25n60m2-ep.pdf
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STF25N60M2-EP N-channel 600 V, 0.175 typ., 18 A MDmesh M2 EP Power MOSFET in a TO-220FP package Datasheet - production data Features V @ R DS DS(on)Order code I DTJmax max. STF25N60M2-EP 650 V 0.188 18 A Extremely low gate charge Excellent output capacitance (COSS) profile Very low turn-off switching losses 32 100% avalanche tested 1
stw63n65dm2.pdf
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STW63N65DM2 N-channel 650 V, 0.042 typ., 60 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features R DS(on)Order code V I P DS D TOTmax. STW63N65DM2 650 V 0.05 60 A 446 W Fast-recovery body diode 3 Extremely low gate charge and input 2capacitance 1 Low on-resistance 100% avalanche tested TO-247 Extreme
stfu9n65m2.pdf
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STFU9N65M2DatasheetN-channel 650 V, 0.79 typ., 5 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads packageFeaturesVDS RDS(on) max. IDOrder codeSTFU9N65M2 650 V 0.90 5 A Extremely low gate charge3 Excellent output capacitance (COSS) profile21 100% avalanche testedTO-220FP Zener-protectedultra narrow leadsD(2)Applications Switching
stw35n65dm2.pdf
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STW35N65DM2DatasheetN-channel 650 V, 93 m typ., 32 A MDmesh DM2 Power MOSFET in a TO-247 packageFeaturesVDS RDS(on) max. IDOrder codeSTW35N65DM2 650 V 110 m 32 A Fast-recovery body diode3 Extremely low gate charge and input capacitance21 Low on-resistance 100% avalanche testedTO-247 Extremely high dv/dt ruggedness Zener-protectedD(2, TAB
stw56n60m2-4.pdf
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STW56N60M2-4 N-channel 600 V, 0.045 typ., 52 A MDmesh M2 Power MOSFET in a TO247-4 package Datasheet - production data Features Order code V Jmax DS(on) DDS @ T R max I STW56N60M2-4 650 V 0.055 52 A Excellent switching performance thanks to the extra driving source pin Extremely low gate charge Excellent output capacitance (C ) profile oss 100%
stf7n60m2.pdf
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STF7N60M2N-channel 600 V, 0.86 typ., 5 A MDmesh II Plus low Qg Power MOSFET in TO-220FP packageDatasheet - production dataFeaturesVDS @ RDS(on) Order code IDTJmax maxSTF7N60M2 650 V 0.95 5 A Extremely low gate charge32 Lower RDS(on) x area vs previous generation1 Low gate input resistanceTO-220FP 100% avalanche tested Zener-protectedApp
stw56n60m2.pdf
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STW56N60M2N-channel 600 V, 0.045 typ., 52 A MDmesh M2 Power MOSFET in a TO-247 packageDatasheet - production dataFeaturesRDS(on) Order code VDS @ TJmax max IDSTW56N60M2 650 V 0.055 52 A Extremely low gate charge Excellent output capacitance (Coss) profile 32 100% avalanche tested1 Zener-protectedTO-247Applications Switching application
stp18n60dm2.pdf
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STP18N60DM2 N-channel 600 V, 0.260 typ., 12 A MDmesh DM2 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I DS DS(on) DSTP18N60DM2 600 V 0.295 12 A Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Ze
stfh18n60m2.pdf
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STFH18N60M2DatasheetN-channel 600 V, 0.255 typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP wide creepage packageFeaturesVDS @TJmax RDS(on) max. IDOrder codeSTFH18N60M2 650 V 0.280 13 A Extremely low gate charge Excellent output capacitance (COSS) profileTO-220 FP wide creepage 100% avalanche testedD(2) Zener-protected Wide distance of 4.25 mm bet
stw70n60dm2.pdf
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STW70N60DM2 N-channel 600 V, 0.037 typ., 66 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTW70N60DM2 600 V 0.042 66 A 446 W Fast-recovery body diode Extremely low gate charge and input 3capacitance 2 Low on-resistance 1 100% avalanche tested Extremely high dv/d
std13n65m2.pdf
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STD13N65M2N-channel 650 V, 0.37 typ., 10 A MDmesh M2 Power MOSFET in a DPAK packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDTABSTD13N65M2 650 V 0.43 10 A Extremely low gate charge32 Excellent output capacitance (Coss) profile 1 100% avalanche tested Zener-protectedDPAKApplications Switching applicationsFigure 1. I
stw70n60m2.pdf
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STW70N60M2N-channel 600 V, 0.03 typ., 68 A MDmesh M2 Power MOSFET in a TO-247 packageDatasheet - production dataFeaturesOrder codes VDS @ TJmax RDS(on) max IDSTW70N60M2 650 V 0.040 68 A Extremely low gate charge321 Excellent output capacitance (Coss) profile 100% avalanche testedTO-247 Zener-protected ApplicationsFigure 1. Internal schematic
stb24n65m2 stf24n65m2 stp24n65m2.pdf
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STB24N65M2, STF24N65M2, STP24N65M2 N-channel 650 V, 0.185 typ., 16 A MDmesh M2 Power MOSFET in D2PAK, TO-220FP and TO-220 packages Datasheet - production data Features Order codes V R max I DS DS(on) DSTB24N65M2 STF24N65M2 650 V 0.23 16 A STP24N65M2 Extremely low gate charge Excellent output capacitance (C ) profile oss 100% avalanche tested Ze
std12n65m2.pdf
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STD12N65M2 N-channel 650 V, 0.42 typ., 8 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) DSTD12N65M2 650 V 0.5 8 A Extremely low gate charge Excellent output capacitance (COSS) profile DPAK (TO-252) 100% avalanche tested Zener-protected Figure 1: Internal schematic diagram Applicatio
stf24n60m2 stfi24n60m2 stfw24n60m2.pdf
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STF24N60M2, STFI24N60M2, STFW24N60M2 N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packagesDatasheet - production dataFeaturesOrder codes VDS @ TJmax RDS(on) max IDSTF24N60M2321 1 STFI24N60M2 650 V 0.19 18 A23TO-220FPSTFW24N60M2I2PAKFP(TO-281) Extremely low gate charge Lower RDS(on) x area
stw45n60dm2ag.pdf
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STW45N60DM2AG Automotive-grade N-channel 600 V, 0.085 typ., 34 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features V @ R DS DS(on)Order code I P D TOTTJmax. max. 34 250 STW45N60DM2AG 650 V 0.093 A W 3 Designed for automotive applications and 2AEC-Q101 qualified 1 Fast-recovery body diode Extremely low gate c
stl13n60m2.pdf
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STL13N60M2N-channel 600 V, 0.39 typ., 7 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - production dataFeaturesOrder code VDS @ TJmax RDS(on) max IDSTL13N60M2 650 V 0.42 7 A Extremely low gate charge Lower RDS(on) x area vs previous generation123 Low gate input resistance4 100% avalanche testedPowerFLAT 5x6
stw48n60m2-4.pdf
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STW48N60M2-4 N-channel 600 V, 0.06 typ., 42 A MDmesh M2 Power MOSFET in a TO247-4 package Datasheet - production data Features Order code V Jmax DS(on) DDS @ T R max I STW48N60M2-4 650 V 0.07 42 A Excellent switching performance thanks to the extra driving source pin Extremely low gate charge Excellent output capacitance (C ) profile oss 100% a
stb18n60m2 stp18n60m2 stw18n60m2.pdf
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STB18N60M2, STP18N60M2, STW18N60M2N-channel 600 V, 0.255 typ., 13 A MDmesh II Plus low Qg Power MOSFET in D2PAK, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABVDS @ RDS(on) 3 Order codes ID1 TJmax max2D PAKSTB18N60M2STP18N60M2 650 V 0.28 13 ATABSTW18N60M2 Extremely low gate charge3 3 Lower RDS(on) x area vs previous generation
stw65n65dm2ag.pdf
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STW65N65DM2AG Automotive-grade N-channel 650 V, 0.042 typ., 60 A Power MOSFET MDmesh DM2 in a TO-247 package Datasheet - production data Features R DS(on)Order code V I P DS D TOTmax. STW65N65DM2AG 650 V 0.05 60 A 446 W Designed for automotive applications and 3AEC-Q101 qualified 2 Fast-recovery body diode 1 Extremely low gate charge and inpu
stb13n60m2 std13n60m2.pdf
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STB13N60M2, STD13N60M2N-channel 600 V, 0.35 typ., 11 A MDmesh II Plus low Qg Power MOSFETs in D2PAK and DPAK packagesDatasheet - production dataFeaturesOrder codes VDS @ TJmax RDS(on) max IDSTB13N60M2TAB650 V 0.38 11 ASTD13N60M2TAB33 Extremely low gate charge11 Lower RDS(on) x area vs previous generationDPAKD2PAK Low gate input resistance
stf28n60dm2.pdf
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STF28N60DM2 N-channel 600 V, 0.13 typ., 21 A MDmesh DM2 Power MOSFET in a TO-220FP package Datasheet - production data Features V @ R DS DS(on)Order code I P D TOTT max. Jmax.STF28N60DM2 650 V 0.16 21 A 30 W Fast-recovery body diode Extremely low gate charge and input 32capacitance 1 Low on-resistance 100% avalanche tested TO-220F
std16n60m2.pdf
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STD16N60M2 N-channel 600 V, 0.280 typ., 12 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) DSTD16N60M2 600 V 0.320 12 A Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected Figure 1: Internal schematic diagram Applications D(
stw48n60m2.pdf
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STW48N60M2 N-channel 600 V, 0.06 typ., 42 A MDmesh M2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V Jmax DS(on) DDS @ T R max I STW48N60M2 650 V 0.07 42 A Extremely low gate charge Excellent output capacitance (C ) profile OSS32 100% avalanche tested 1 Zener-protected TO-247Applications Switchin
std11n65m2 stp11n65m2 stu11n65m2.pdf
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STD11N65M2, STP11N65M2, STU11N65M2N-channel 650 V, 0.6 typ., 7 A MDmesh II Plus low Qg Power MOSFETs in DPAK, TO-220 and IPAK packagesDatasheet - preliminary dataFeaturesTABTAB3Order codes VDS RDS(on) max ID1STD11N65M2DPAK3STP11N65M2 650 V 0.67 7 A21STU11N65M2TO-220TAB Extremely low gate charge Lower RDS(on) x area vs previous generation
am2931.pdf
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AM2931-110RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.3:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.400 x .500 2L SFL (S138).METAL/CERAMIC HERMETIC PACKAGEhermetically sealed.P 105 W MIN. WITH 6.2 dB GAINOUT =ORDER CODE BRANDINGAM2931-110 2931-110DESCRIPTIONPIN CONN
stw37n60dm2ag.pdf
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STW37N60DM2AG Automotive-grade N-channel 600 V, 0.094 typ., 28 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STW37N60DM2AG 600 V 0.110 28 A 210 W Designed for automotive applications and AEC-Q101 qualified 3 Fast-recovery body diode 2 Extremely low gate charge and input 1capac
stl9n60m2.pdf
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STL9N60M2N-channel 600 V, 0.76 typ., 4.8 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - production dataFeaturesOrder code VDS @ TJmax RDS(on) max IDSTL9N60M2 650 V 0.86 4.8 A Extremely low gate charge Lower RDS(on) x area vs previous generation123 Low gate input resistance4 100% avalanche testedPowerFLAT 5x
stl12n65m2.pdf
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STL12N65M2 N-channel 650 V, 0.62 typ., 5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTL12N65M2 650 V 0.75 5 A 48 W 1 Extremely low gate charge 23 Excellent output capacitance (COSS) profile 4 100% avalanche tested Zener-protected PowerFLAT 5x6 HVAp
std5n60m2 stp5n60m2 stu5n60m2.pdf
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STD5N60M2, STP5N60M2, STU5N60M2N-channel 600 V, 1.26 typ., 3.5 A MDmesh II Plus low QgPower MOSFETs in DPAK, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABOrder codes VDS @ TJmax RDS(on) max ID3STD5N60M21STP5N60M2 650 V 1.4 3.5 ADPAKSTU5N60M2TAB Extremely low gate chargeTAB Lower RDS(on) x area vs previous generation3 3 Lo
stp16n60m2 stu16n60m2.pdf
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STP16N60M2, STU16N60M2 N-channel 600 V, 0.28 typ., 12 A MDmesh M2 Power MOSFET in TO-220 and IPAK packages Datasheet - production data Features TABOrder code V R max. I DS DS(on) DSTP16N60M2 600 V 0.32 12 A STU16N60M2 3 2TAB1TO-220 Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested 32IPAK
std16n65m2.pdf
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STD16N65M2N-channel 650 V, 0.32 typ., 11 A MDmesh M2 Power MOSFET in a DPAK packageDatasheet - production dataFeaturesOrder code VDS @ TJmax RDS(on) max IDTABSTD16N65M2 710 V 0.36 11 A Extremely low gate charge32 Excellent output capacitance (Coss) profile 1 100% avalanche tested Zener-protectedDPAKApplications Switching applicationsFig
am2729.pdf
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AM2729-110RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.3:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE .400 x .500 2L SFL (S138)hermetically sealed.P 105 W MIN. WITH 6.5 dB GAINOUT =ORDER CODE BRANDINGAM2729-110 2729-110DESCRIPTIONPIN CONNE
stp43n60dm2.pdf
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STP43N60DM2 N-channel 600 V, 0.085 typ., 34 A MDmesh DM2 Power MOSFET in a TO-220 package Datasheet - production data Features V @ R DS DS(on)Order code I P D TOTTJmax. max. STP43N60DM2 650 V 0.093 34 A 250 W Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high
stfu18n65m2.pdf
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STFU18N65M2 N-channel 650 V, 0.275 typ., 12 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code V R max I DS DS(on) DSTFU18N65M2 650 V 0.33 12 A Extremely low gate charge Excellent output capacitance (C ) profile oss 100% avalanche tested 321 Zener-protected TO-220FPApplication
std9n60m2 stp9n60m2 stu9n60m2.pdf
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STD9N60M2, STP9N60M2, STU9N60M2N-channel 600 V, 0.72 typ., 5.5 A MDmesh II Plus low Qg Power MOSFET in DPAK, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABVDS @ RDS(on) Order codes ID3TJmax max1DPAK STD9N60M2STP9N60M2 650 V 0.78 5.5 ATABSTU9N60M2TAB Extremely low gate charge3 3 Lower RDS(on) x area vs previous generation2 2
stf18n65m2.pdf
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STF18N65M2N-channel 650 V, 0.275 typ., 12 A MDmesh M2 Power MOSFET in a TO-220FP packageDatasheet - production dataFeaturesRDS(on) Order code VDS IDmaxSTF18N65M2 650 V 0.33 12 A Extremely low gate charge32 Excellent output capacitance (Coss) profile1 100% avalanche testedTO-220FP Zener-protectedApplications Switching applicationsF
stf12n50m2.pdf
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STF12N50M2N-channel 500 V, 0.325 typ.,10 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP packageDatasheet - preliminary dataFeaturesOrder code VDS RDS(on) max IDSTF12N50M2 500 V 0.38 10 A Extremely low gate charge Lower RDS(on) x area vs previous generation32 Low gate input resistance1 100% avalanche testedTO-220FP Zener-protectedAppli
stf40n65m2.pdf
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STF40N65M2 N-channel 650 V, 0.087 typ., 32 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I DS DS(on) DSTF40N65M2 650 V 0.099 32 A Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested 32 Zener-protected 1Applications TO-220FP Switching appl
esm2012.pdf
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ESM2012DVNPN DARLINGTON POWER MODULE HIGH CURRENT POWER BIPOLAR MODULE VERY LOW R JUNCTION TO CASEth SPECIFIED ACCIDENTAL OVERLOADAREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE (2500V RMS) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCEINDUSTRIAL APPLICATIONS: MOTOR CONTROL UPS DC/DC & DC/AC CONVERTERSISOTOPINTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
am2729-125.pdf
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AM2729-125RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.P 125 W MIN. WITH 7.0 dB GAINOUT =.400 x .500 2LFL (S038)hermetically sealedBRANDINGORDER CODE2729-125AM2729-125DESCRIPTIONThe AM2729-125 device is a hig
stb40n60m2 stp40n60m2 stw40n60m2.pdf
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STB40N60M2, STP40N60M2,STW40N60M2N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABTABOrder codes VDS @ TJmax RDS(on) max ID2STB40N60M23132 STP40N60M2 650 V 0.088 34 AD2PAK1STW40N60M2TO-220 Extremely low gate charge Lower RDS(on) x area vs previous
stf7n65m2.pdf
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STF7N65M2N-channel 650 V, 0.98 typ., 5 A MDmesh M2 Power MOSFET in a TO-220FP packageDatasheet - preliminary dataFeaturesRDS(on) Order code VDS max IDSTF7N65M2 650 V 1.15 5 A Extremely low gate charge32 Excellent output capacitance (Coss) profile1 100% avalanche testedTO-220FP Zener-protectedApplications Switching applicationsFigure 1
std22nm20n.pdf
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STD22NM20NN-CHANNEL 200V - 0.088 - 22A DPAKULTRA LOW GATE CHARGE MDmesh II MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) IDSTD22NM20N 200 V
stf9n60m2.pdf
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STF9N60M2, STFI9N60M2N-channel 600 V, 0.72 typ., 5.5 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP and I2PAKFP packagesDatasheet - production dataFeaturesVDS @ RDS(on) Order codes IDTJmax maxSTF9N60M2650 V 0.78 5.5 ASTFI9N60M2 Extremely low gate charge321213 Lower RDS(on) x area vs previous generationTO-220FP I2PAKFP (TO-281) Low
stf15n60m2-ep stfi15n60m2-ep.pdf
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STF15N60M2-EP, STFI15N60M2-EP N-channel 600 V, 0.340 typ., 11 A MDmesh M2 EP Power MOSFET in TO-220FP and IPAKFP packages Datasheet - production data Extremely low gate charge Excellent output capacitance (COSS) profile Very low turn-off switching losses 100% avalanche tested Zener-protected Applications TO-220FP I2PAKFP (TO-281) Switching
stf12n60m2.pdf
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STF12N60M2 N-channel 600 V, 0.395 typ., 9 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTF12N60M2 600 V 0.450 9 A 25 W Extremely low gate charge Excellent output capacitance (COSS) profile 3 100% avalanche tested 2 Zener-protected 1Applications TO-220FP Switch
stf5n60m2.pdf
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STF5N60M2N-channel 600 V, 1.26 typ., 3.7 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP packageDatasheet - preliminary dataFeaturesVDS @ RDS(on) Order code IDTJmax maxSTF5N60M2 650 V 1.4 3.7 A Extremely low gate charge3 Lower RDS(on) x area vs previous generation21 Low gate input resistanceTO-220FP 100% avalanche tested Zener-protec
stf8n60dm2.pdf
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STF8N60DM2 N-channel 600 V, 550 m typ., 8 A MDmesh DM2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTF8N60DM2 600 V 600 m 8 A 25 W Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness
stp13n60m2 stu13n60m2 stw13n60m2.pdf
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STP13N60M2, STU13N60M2, STW13N60M2N-channel 600 V, 0.35 typ., 11 A MDmesh II Plus low Qg Power MOSFETs in TO-220, IPAK and TO-247 packagesDatasheet - production dataFeaturesTABTABOrder codes VDS @ TJmax RDS(on) max ID321STP13N60M2321IPAKSTU13N60M2 650 V 0.38 11 ATO-220STW13N60M2 Extremely low gate charge Lower RDS(on) x area vs previous g
sti18n65m2 stp18n65m2.pdf
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STI18N65M2, STP18N65M2N-channel 650 V, 0.275 typ., 12 A MDmesh M2 Power MOSFET in IPAK and TO-220 packagesDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDTABTABSTI18N65M2650V 0.33 12 ASTP18N65M23 32211 Extremely low gate chargeI2PAK TO-220 Excellent output capacitance (Coss) profile 100% avalanche tested Zener-prote
stb28n60m2 stp28n60m2 stw28n60m2.pdf
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STB28N60M2, STP28N60M2, STW28N60M2N-channel 600 V, 0.135 typ., 22 A MDmesh M2 Power MOSFETs in D2PAK, TO-220 and TO-247 packagesDatasheet - production dataTAB FeaturesTABVDS @ RDS(on) Order code ID3TJmax max1321STB28N60M2D2PAKTO-220STP28N60M2 650 V 0.150 22 ASTW28N60M2 Extremely low gate charge3 Excellent output capacitance (Coss) prof
stf18n60m2.pdf
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STF18N60M2N-channel 600 V, 0.255 typ., 13 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP packageDatasheet - production dataFeaturesOrder code VDS @ TJmax RDS(on) max IDSTF18N60M2 650 V 0.28 13 A Extremely low gate charge Lower RDS(on) x area vs previous generation321 Low gate input resistanceTO-220FP 100% avalanche tested Zener-protected
stb6n65m2 std6n65m2.pdf
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STB6N65M2, STD6N65M2N-channel 650 V, 1.2 typ., 4 A MDmesh M2 Power MOSFETs in D2PAK and DPAK packagesDatasheet - preliminary dataFeaturesOrder codes VDS RDS(on) max IDSTB6N65M2650 V 1.35 4 ATAB TABSTD6N65M2313 Extremely low gate charge1DPAK2D PAK Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protectedApp
stw70n65m2.pdf
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STW70N65M2 N-channel 650 V, 0.039 typ., 63 A MDmesh M2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V R max. I DS DS(on) DSTW70N65M2 650 V 0.046 63 A Extremely low gate charge Excellent output capacitance (COSS) profile 3 100% avalanche tested 2 Zener-protected 1Applications TO-247 Switching applicat
stf10n60m2.pdf
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STF10N60M2, STFI10N60M2N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP and IPAKFP packagesDatasheet - production dataFeaturesRDS(on) Order codes VDS @ TJmax max IDSTF10N60M2650 V 0.6 7.5 ASTFI10N60M2 Extremely low gate charge3 Lower RDS(on) x area vs previous generation1221 3 Low gate input resistance2T
stwa48n60dm2.pdf
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STWA48N60DM2 N-channel 600 V, 0.065 typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 long leads package Datasheet - production data Features Order code V R max. I DS DS(on) DSTWA48N60DM2 600 V 0.079 40 A Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt rugged
stf11n65m2-045y.pdf
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STF11N65M2(045Y)DatasheetN-channel 650 V, 0.60 typ., 7 A MDmesh M2 Power MOSFET in a TO-220FP narrow leads packageFeaturesVDS RDS(on) max. ID PTOTOrder codeSTF11N65M2(045Y) 650 V 0.68 7 A 25 W Extremely low gate charge321 Excellent output capacitance (COSS) profileTO-220FP narrow leads 100% avalanche tested Zener-protectedD(2) Applications
stb6n60m2 std6n60m2.pdf
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STB6N60M2, STD6N60M2N-channel 600 V, 1.06 typ., 4.5 A MDmesh II Plus low Qg Power MOSFET in D2PAK and DPAK packagesDatasheet - production dataFeaturesVDS @ RDS(on) Order codes IDTJmax maxTAB TABSTB6N60M2650 V 1.2 4.5 A3STD6N60M2131DPAK2 Extremely low gate chargeD PAK Lower RDS(on) x area vs previous generation Low gate input resistanc
stl7n60m2.pdf
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STL7N60M2 N-channel 600 V, 0.92 typ., 5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x5 package Datasheet - production data Features Order code V @ Tjmax R max I DS DS(on) DSTL7N60M2 650 V 1.05 5 A 675 Extremely low gate charge 4 Excellent output capacitance (COSS) profile 100% avalanche tested 112 Zener-protected PowerFLAT 5x5 Applic
stb33n65m2 stf33n65m2 sti33n65m2 stp33n65m2.pdf
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STB33N65M2, STF33N65M2,STP33N65M2, STI33N65M2N-channel 650 V, 0.117 typ., 24 A MDmesh M2 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABTABRDS(on) Order codes VDS max IDSTB33N65M233121STF33N65M2TO-220FPD2PAK650 V 0.14 24 ASTP33N65M2TAB TABSTI33N65M2 Extremely low gate charge Exce
stp12n50m2.pdf
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STP12N50M2N-channel 500 V, 0.325 typ.,10 A MDmesh II Plus low Qg Power MOSFET in a TO-220 packageDatasheet - preliminary dataFeaturesOrder code VDS RDS(on) max IDTABSTP12N50M2 500 V 0.38 10 A Extremely low gate charge Lower RDS(on) x area vs previous generation3 Low gate input resistance21 100% avalanche testedTO-220 Zener-protectedAppl
stw40n65m2.pdf
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STW40N65M2 N-channel 650 V, 0.087 typ., 32 A MDmesh M2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V R max. I DS DS(on) DSTW40N65M2 650 V 0.099 32 A Extremely low gate charge Excellent output capacitance (COSS) profile 3 100% avalanche tested 2 Zener-protected 1Applications TO-247 Switching applicat
stf13n60m2 stfi13n60m2.pdf
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STF13N60M2, STFI13N60M2N-channel 600 V, 0.35 typ., 11 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP and I2PAKFP packagesDatasheet - production dataFeaturesOrder codes VDS @ TJmax RDS(on) max IDSTF13N60M2650 V 0.38 11 ASTFI13N60M232 Extremely low gate charge1123TO-220FP Lower RDS(on) x area vs previous generationI2PAKFP Low gate input r
stu12n60m2.pdf
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STU12N60M2 N-channel 600 V, 0.395 typ., 9 A MDmesh M2 Power MOSFET in an IPAK package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTTABSTU12N60M2 600 V 0.450 9 A 85 W Extremely low gate charge 32 Excellent output capacitance (COSS) profile 1 100% avalanche tested Zener-protected IPAKApplications Switchi
stf11n60m2-ep.pdf
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STF11N60M2-EPDatasheetN-channel 600 V, 0.550 typ., 7.5 A MDmesh M2 EP Power MOSFET in a TO-220FP packageFeaturesVDS RDS(on) max. IDOrder codeSTF11N60M2-EP 600 V 0.595 7.5 A Extremely low gate charge Excellent output capacitance (COSS) profile321 Very low turn-off switching losses 100% avalanche testedTO-220FP Zener-protectedD(2)Applica
stl18n65m2.pdf
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STL18N65M2N-channel 650 V, 0.290 typ., 8 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - preliminary dataFeaturesVDS @ Order codesTJmax RDS(on) max IDSTL18N65M2 715 V 0.365 8 A Extremely low gate charge123 Excellent output capacitance (Coss) profile4 100% avalanche testedPowerFLAT 5x6 HV Zener-protectedApplicatio
stb33n60m2.pdf
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STB33N60M2N-channel 600 V, 0.108 typ., 26 A MDmesh II Plus low Qg Power MOSFETs in a D2PAK packageDatasheet - production dataFeaturesVDS @ RDS(on) TABOrder code IDTJmax maxSTB33N60M2 650 V 0.125 26 A3 Extremely low gate charge1 Lower RDS(on) x area vs previous generationD 2PAK MDmesh II technology Low gate input resistance 100% avalan
stb28n60dm2 stp28n60dm2 stw28n60dm2.pdf
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STB28N60DM2, STP28N60DM2, STW28N60DM2 N-channel 600 V, 0.13 typ., 21 A MDmesh DM2 Power MOSFETs in DPAK, TO-220 and TO-247 packages Datasheet - production data Features V @ R DS DS(on)Order code I P D TOTT max. Jmax.STB28N60DM2 STP28N60DM2 600 V 0.16 21 A 170 W STW28N60DM2 Fast-recovery body diode Extremely low gate charge and input capacita
stw43n60dm2.pdf
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STW43N60DM2 N-channel 600 V, 0.085 typ., 34 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features V @ DSR DS(on)Order code I P D TOTmax. TJmax. STW43N60DM2 650 V 0.093 34 A 250 W Fast-recovery body diode 3 Extremely low gate charge and input 2capacitance 1 Low on-resistance 100% avalanche tested TO-2
std8n60dm2.pdf
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STD8N60DM2DatasheetN-channel 600 V, 550 m typ., 8 A, MDmesh DM2 Power MOSFET in a DPAK packageFeaturesVDS RDS(on) max. ID PTOTOrder codeTABSTD8N60DM2 600 V 600 m 8 A 85 W321 Fast-recovery body diodeDPAK Extremely low gate charge and input capacitance Low on-resistanceD(2, TAB) 100% avalanche tested Extremely high dv/dt ruggedness Ze
stf40n60m2 stfi40n60m2 stfw40n60m2.pdf
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STF40N60M2, STFI40N60M2, STFW40N60M2N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packagesDatasheet - production dataFeaturesOrder codes VDS @ TJmax RDS(on) max IDSTF40N60M2STFI40N60M2 650 V 0.088 34 A321 STFW40N60M2123TO-220FPI2PAKFP (TO-281) Extremely low gate charge Lower RDS(on) x area
std12n50m2.pdf
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STD12N50M2N-channel 500 V, 0.325 typ.,10 A MDmesh M2 Power MOSFET in a DPAK packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTD12N50M2 500 V 0.38 10 ATAB Extremely low gate charge3 Excellent output capacitance (COSS) profile1 100% avalanche testedDPAK Zener-protectedApplications Switching applicationsFigure 1. Int
stu6n60dm2.pdf
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STU6N60DM2DatasheetN-channel 600 V, 0.95 typ., 5 A MDmesh DM2 Power MOSFET in an IPAK packageFeaturesVDS RDS(on) max. ID PTOTTAB Order codeSTU6N60DM2 600 V 1.10 5 A 60 W32 Fast-recovery body diode1 Extremely low gate charge and input capacitance Low on-resistanceIPAK 100% avalanche tested Extremely high dv/dt ruggednessD(2, TAB) Zen
stp26n65dm2.pdf
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STP26N65DM2DatasheetN-channel 650 V, 0.156 typ., 20 A, MDmesh DM2 Power MOSFET in a TO-220 packageFeaturesVDS RDS(on) max. ID PTOTOrder codeTABSTP26N65DM2 650 V 0.190 20 A 170 W Fast-recovery body diode32 Extremely low gate charge and input capacitance1 Low on-resistanceTO-220 100% avalanche tested Extremely high dv/dt ruggednessD(2, T
stw56n65m2-4.pdf
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STW56N65M2-4N-channel 650 V, 0.049 typ., 49 A MDmesh M2 Power MOSFET in a TO247-4 packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTW56N65M2-4 650 V 0.062 49 A Excellent switching performance thanks to the extra driving source pin Extremely low gate charge4 Excellent output capacitance (Coss) profile 32 100% avalanche tes
stp16n65m2 stu16n65m2.pdf
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STP16N65M2, STU16N65M2N-channel 650 V, 0.32 typ., 11 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packagesDatasheet - production dataFeaturesTABOrder code VDS @ TJmax RDS(on) max IDTABSTP16N65M2 710 V 0.36 11 ASTU16N65M2 710 V 0.36 11 A3 Extremely low gate charge23 Excellent output capacitance (Coss) profile 121 100% avalanche tested
stf16n65m2.pdf
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STF16N65M2N-channel 650 V, 0.32 typ., 11 A MDmesh M2 Power MOSFET in a TO-220FP packageDatasheet - production dataFeaturesOrder code VDS @ TJmax RDS(on) max IDSTF16N65M2 710 V 0.36 11 A Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested Zener-protectedApplicationsTO-220FP Switching applicationsFigure 1.
stf13n60dm2.pdf
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STF13N60DM2DatasheetN-channel 600 V, 0.310 typ., 11 A MDmesh DM2 Power MOSFET in a TO-220FP packageVDS RDS(on) max. IDOrder codesSTF13N60DM2 600 V 0.365 11 A Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance321 100% avalanche tested Extremely high dv/dt ruggednessTO-220FP Zener-protectedD(2)A
stp20n60m2-ep.pdf
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STP20N60M2-EPN-channel 600 V, 0.230 typ., 13 A MDmesh M2 EP Power MOSFET in a TO-220 packageFeaturesVDS RDS(on) max. IDOrder codeTABSTB20N60M2-EP 600 V 0.278 13 A Extremely low gate charge32 Excellent output capacitance (COSS) profile1TO-220 Very low turn-off switching losses 100% avalanche tested Zener-protectedD(2, TAB)Applications
stwa48n60m2.pdf
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STWA48N60M2 N-channel 600 V, 0.06 typ., 42 A MDmesh M2 Power MOSFET in a TO-247 long leads package Datasheet - production data Features Order code V DS @ TJmax. RDS(on) max. ID STWA48N60M2 650 V 0.07 42 A Extremely low gate charge Excellent output capacitance (C ) profile OSS 100% avalanche tested Zener-protected Applications Switching app
std11n50m2 stf11n50m2 stf11n50m2.pdf
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STD11N50M2, STF11N50M2N-channel 500 V, 0.45 typ,8 A, MDmesh II Plus low Qg Power MOSFETs in DPAK and TO-220FP packagesDatasheet - preliminary dataFeaturesOrder codes VDS @ TJmax RDS(on) max IDSTD11N50M2550 V 0.53 8 ASTF11N50M2TAB Extremely low gate charge31 Lower RDS(on) x area vs previous generation3DPAK2 Low gate input resistance1
stf16n60m2.pdf
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STF16N60M2 N-channel 600 V, 0.28 typ., 12 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I DS DS(on) DSTF16N60M2 600 V 0.32 12 A Extremely low gate charge Excellent output capacitance (COSS) profile 3 100% avalanche tested 2 Zener-protected 1Applications TO-220FP Switching applica
std13n60dm2.pdf
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STD13N60DM2DatasheetN-channel 600 V, 0.310 typ., 11 A MDmesh DM2 Power MOSFET in a DPAK packageVDS RDS(on) max. IDOrder codesTABSTD13N60DM2 600 V 0.365 11 A Fast-recovery body diode321 Extremely low gate charge and input capacitanceDPAK Low on-resistance 100% avalanche testedD(2, TAB) Extremely high dv/dt ruggedness Zener-protected
stp13n65m2 stu13n65m2.pdf
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STP13N65M2, STU13N65M2N-channel 650 V, 0.37 typ.,10 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packagesDatasheet - production dataFeaturesRDS(on) Order code VDS IDmaxTABSTP13N65M2TAB650 V 0.43 10ASTU13N65M232132 Extremely low gate charge1TO-220 Excellent output capacitance (Coss) profileIPAK 100% avalanche tested Zener-pr
stl12n60m2.pdf
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STL12N60M2 N-channel 600 V, 0.400 typ., 6.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTL12N60M2 600 V 0.495 6.5 A 52 W 1 Extremely low gate charge 23 Excellent output capacitance (COSS) profile 4 100% avalanche tested Zener-protected PowerFLAT 5x6 HV
std9n40m2.pdf
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STD9N40M2N-channel 400 V, 0.59 typ., 6 A MDmesh II Plus low Qg Power MOSFET in a DPAK packageDatasheet - preliminary dataFeaturesOrder code VDS @ TJmax RDS(on) max IDSTD9N40M2 450 V 0.8 6 ATAB Extremely low gate charge3 Lower RDS(on) x area vs previous generation1 Low gate input resistanceDPAK 100% avalanche tested Zener-protectedApplica
stp13n60dm2.pdf
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STP13N60DM2DatasheetN-channel 600 V, 0.310 typ., 11 A MDmesh DM2 Power MOSFET in a TO-220 packageFeaturesVDS RDS(on ) max. IDOrder codeTABSTP13N60DM2 600 V 0.365 11 A Fast-recovery body diode32 Extremely low gate charge and input capacitance1 Low on-resistanceTO-220 100% avalanche tested Extremely high dv/dt ruggednessD(2, TAB) Ze
stf28n60m2 stfi28n60m2.pdf
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STF28N60M2, STFI28N60M2N-channel 600 V, 0.135 typ., 22 A MDmesh M2 Power MOSFETs in TO-220FP and I2PAKFP packagesDatasheet - production dataFeaturesOrder code VDS @ TJmax RDS(on) max IDSTF28N60M2650 V 0.150 22 ASTFI28N60M23 Extremely low gate charge21 Excellent output capacitance (Coss) profile TO-220FP 123 100% avalanche tested2I PAKFP
stf24n60dm2.pdf
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STF24N60DM2N-channel 600 V, 0.175 typ., 18 A MDmesh DM2 Power MOSFET in a TO-220FP packageDatasheet - production dataFeaturesVDS @ RDS(on) Order code IDTJmax maxSTF24N60DM2 650 V 0.20 18 A Fast-recovery body diode Extremely low gate charge and input 321 capacitanceTO-220FP Low on-resistance 100% avalanche tested Extremely high dv/dt rugg
std15n50m2ag.pdf
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STD15N50M2AG Automotive-grade N-channel 500 V, 0.336 typ., 10 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features R DS(on)Order code V I P DS D TOTmax. STD15N50M2AG 500 V 0.380 10 A 85 W Designed for automotive applications and AEC-Q101 qualified Extremely low gate charge Excellent output capacitance (C ) profile OSS
stw48n60dm2.pdf
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STW48N60DM2 N-channel 600 V, 0.065 typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V R max. I DS DS(on) DSTW48N60DM2 600 V 0.079 40 A Fast-recovery body diode Extremely low gate charge and input 3capacitance 2 Low on-resistance 1 100% avalanche tested Extremely high dv/dt ruggedness
std9n65m2 stf9n65m2 stp9n65m2 stu9n65m2.pdf
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STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2N-channel 650 V, 0.79 typ., 5 A MDmesh M2 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABRDS(on) Order codes VDS max ID31DPAK STD9N65M2321 STF9N65M2650 V 0.9 5 ASTP9N65M2TO-220FPTAB STU9N65M2TAB Extremely low gate charge32 Excellent output capacit
stf13n65m2 stfi13n65m2.pdf
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STF13N65M2, STFI13N65M2N-channel 650 V, 0.37 typ., 10 A MDmesh M2 PowerMOSFETs in TO-220FP and IPAKFP packagesDatasheet - production dataFeaturesRDS(on) Order code VDS max IDSTF13N65M2650 V 0.43 10ASTFI13N65M2 Extremely low gate charge321213 Excellent output capacitance (Coss) profileTO-220FP I2PAKFP (TO-281) 100% avalanche tested
std11n50m2 stf11n50m2.pdf
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STD11N50M2, STF11N50M2DatasheetN-channel 500 V, 0.45 typ., 8 A MDmesh M2 Power MOSFETs in DPAK and TO-220FP packagesFeaturesVDS @ TJmax RDS(on)max. IDOrder code PackageTABSTD11N50M2 DPAK3550 V 0.53 8 A2STF11N50M2 TO-220FP1321 Extremely low gate chargeDPAK TO-220FP Excellent output capacitance (COSS) profile 100% avalanche tested Zen
stf9n60m2 stfi9n60m2.pdf
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STF9N60M2, STFI9N60M2N-channel 600 V, 0.72 typ., 5.5 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP and I2PAKFP packagesDatasheet - production dataFeaturesVDS @ RDS(on) Order codes IDTJmax maxSTF9N60M2650 V 0.78 5.5 ASTFI9N60M2 Extremely low gate charge321213 Lower RDS(on) x area vs previous generationTO-220FP I2PAKFP (TO-281) Low
std13n50dm2ag.pdf
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STD13N50DM2AGDatasheetAutomotive-grade N-channel 500 V, 320 m typ., 11 A MDmesh DM2 Power MOSFET in a DPAK packageFeaturesVDS RDS(on ) max. IDOrder codeTABSTD13N50DM2AG 500 V 360 m 11 A321DPAK AEC-Q101 qualified Fast-recovery body diode Extremely low gate charge and input capacitanceD(2, TAB) Low on-resistance 100% avalanche tested E
stfu16n65m2.pdf
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STFU16N65M2 N-channel 650 V, 0.32 typ., 11 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code V R max I DS DS(on) DSTFU16N65M2 650 V 0.36 11 A Extremely low gate charge Excellent output capacitance (C ) profile OSS 100% avalanche tested 321 Zener-protected TO-220FPApplications
stl18n60m2.pdf
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STL18N60M2N-channel 600 V, 0.278 typ., 9 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - production dataFeaturesVDS @ Order codeTJmax RDS(on) max IDSTL18N60M2 650 V 0.308 9 A Extremely low gate charge123 Lower RDS(on) x area vs previous generation4 Low gate input resistancePowerFLAT 5x6 HV 100% avalanche
stl20nm20n.pdf
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STL20NM20NN-CHANNEL 200V - 0.088 - 20A PowerFLATULTRA LOW GATE CHARGE MDmesh II MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) IDSTL20NM20N 200 V
stb24n60dm2 stp24n60dm2 stw24n60dm2.pdf
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STB24N60DM2, STP24N60DM2, STW24N60DM2N-channel 600 V, 0.175 typ., 18 A FDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTAB TABVDS @ RDS(on) 2Order codes ID3 TJmax max13STB24N60DM2D2PAK21STP24N60DM2 650 V 0.20 18 ATO-220STW24N60DM2 Extremely low gate charge and input capacitance32
stf12n65m2.pdf
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STF12N65M2N-channel 650 V, 0.42 typ., 8 A MDmesh M2Power MOSFET in a TO-220FP packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTF12N65M2 650 V 0.5 8 A Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested3 2 Zener-protected1 ApplicationsTO-220FP Switching applicationsFigure
stf11n65m2 stf11n65m2 stfi11n65m2.pdf
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STF11N65M2, STFI11N65M2N-channel 650 V, 0.6 typ., 7 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP and I2PAKFP packagesDatasheet - preliminary dataFeaturesOrder codes VDS RDS(on) max IDSTF11N65M2650 V 0.67 7 ASTFI11N65M2 Extremely low gate charge3 Lower RDS(on) x area vs previous generation12231 Low gate input resistance2TO-220FPI P
std7n60m2 stp7n60m2 stu7n60m2.pdf
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STD7N60M2, STP7N60M2, STU7N60M2N-channel 600 V, 0.86 typ., 5 A MDmesh II Plus low Qg Power MOSFET in DPAK, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABVDS @ RDS(on) Order codes ID3TJmax max1STD7N60M2DPAKSTP7N60M2 650 V 0.95 5 ATABSTU7N60M2TAB Extremely low gate charge332 Lower RDS(on) x area vs previous generation21
stf11n65m2 stfi11n65m2.pdf
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STF11N65M2, STFI11N65M2 N-channel 650 V, 0.6 typ., 7 A MDmesh M2 Power MOSFETs in TO-220FP and IPAKFP packages Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTF11N65M2 650 V 0.68 7 A 25 W STFI11N65M2 Extremely low gate charge TO-220FP I2PAKFP (TO-281) Excellent output capacitance (C ) profile OSS 100% avalanche teste
std5n60dm2.pdf
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STD5N60DM2DatasheetN-channel 600 V, 1.38 typ., 3.5 A MDmesh DM2 Power MOSFET in a DPAK packageFeaturesVDS RDS(on) max. ID PTOTOrder codeTABSTD5N60DM2 600 V 1.55 3.5 A 45 W321 Fast-recovery body diodeDPAK Extremely low gate charge and input capacitance Low on-resistanceD(2, TAB) 100% avalanche tested Extremely high dv/dt ruggedness
std9hn65m2.pdf
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STD9HN65M2 N-channel 600 V, 0.71 typ., 5.5 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) DSTD9HN65M2 600 V 0.82 5.5 A Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected Figure 1: Internal schematic diagram Applications D(
stb35n60dm2.pdf
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STB35N60DM2 N-channel 600 V, 0.094 typ., 28 A MDmesh DM2 Power MOSFET in a DPAK package Datasheet - production data Features R DS(on)Order code VDS ID PTOT TAB max. STB35N60DM2 600 V 0.110 28 A 210 W 3 Fast-recovery body diode 1 Extremely low gate charge and input capacitance Low on-resistance D2PAK 100% avalanche tested Extremely
stl24n60m2.pdf
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STL24N60M2N-channel 600 V, 0.186 typ., 18 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 8x8 HV packageDatasheet - production dataFeaturesOrder code VDS @ TJmax RDS(on) max IDS(2) Bottom viewS(2)S(2)STL24N60M2 650 V 0.21 18 AG(1)D(3) Extremely low gate charge Lower RDS(on) x area vs previous generation Low gate input resistancePowerFLAT
stl33n60m2.pdf
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STL33N60M2 N-channel 600 V, 0.115 typ., 22 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - production data Features Order code VDS @ T R I Jmax DS(on)max DSTL33N60M2 650 V 0.135 22 A Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested Zener-protected Applications Switching app
stb33n60dm2 stp33n60dm2 stw33n60dm2.pdf
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STB33N60DM2, STP33N60DM2, STW33N60DM2 N-channel 600 V, 0.110 typ., 24 A MDmesh DM2 Power MOSFET in DPAK, TO-220 and TO-247 packages Datasheet - production data Features Order code V @ T R max. I DS Jmax. DS(on) DSTB33N60DM2 650 V 0.130 24 A STP33N60DM2 650 V 0.130 24 A STW33N60DM2 650 V 0.130 24 A Fast-recovery body diode Extremely low gate charg
stl33n60dm2.pdf
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STL33N60DM2 N-channel 600 V, 0.115 typ., 21 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - production data Features VDS @ Order code RDS(on)max ID T Jmax5STL33N60DM2 650 V 0.140 21 A 432 Fast-recovery body diode 1 Extremely low gate charge and input capacitance Low on-resistance PowerFLAT 8x8 HV 100% ava
r07ds0531ej rjh60m2dpe.pdf
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Preliminary DatasheetRJH60M2DPE R07DS0531EJ0100600 V - 12 A - IGBT Rev.1.00Application: Inverter Aug 30, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno
r07ds0530ej rjh60m2dpp.pdf
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Preliminary DatasheetRJH60M2DPP-M0 R07DS0530EJ0100600 V - 12 A - IGBT Rev.1.00Application: Inverter Sep 02, 2011Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec
rjk03m2dpa.pdf
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Preliminary Datasheet RJK03M2DPA 30V, 45A, 2.8mmax. R07DS0766EJ0200N Channel Power MOS FET Rev.2.00High Speed Power Switching Feb 12, 2013Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DE-A(Package nam
rjh60m2dpp-m0.pdf
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Preliminary Datasheet RJH60M2DPP-M0 R07DS0530EJ0300600V - 12A - IGBT Rev.3.00Application: Inverter May 25, 2012Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (85 ns typ.) in one package Trench gate and thin wafer tech
rjh60m2dpe.pdf
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Preliminary Datasheet RJH60M2DPE R07DS0531EJ0300600V - 12A - IGBT Rev.3.00Application: Inverter May 25, 2012Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (85 ns typ.) in one package Trench gate and thin wafer technol
rej03g1492 rqm2201dnsds.pdf
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
irfm210btf fp001.pdf
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November 2001IRFM210B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.77A, 200V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 7.2 nC)planar, DMOS technology. Low Crss ( typical 6.8 pF)This advanced technology has been especially tailored to Fas
fdfm2p110.pdf
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August 2005FDFM2P110Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description ApplicationsFDFM2P110 combines the exceptional performance of Buck BoostFairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a FeaturesMicroFET package. This device is designed specifically as a single package -3.5 A
fsam20sh60a.pdf
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FSAM20SH60ASPMTM (Smart Power Module)General Description FeaturesFSAM20SH60A is an advanced smart power module UL Certified No. E209204(SPM) that Fairchild has newly developed and designed to 600V-20A 3-phase IGBT inverter bridge including controlprovide very compact and high performance ac motorICs for gate driving and protection drives mainly targeting high speed low-pow
irfm220btf fp001.pdf
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November 2001IRFM220B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.13A, 200V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to Fast
fdfm2n111.pdf
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August 2005FDFM2N111Integrated N-Channel PowerTrench MOSFET and Schottky Diode General Description ApplicationsFDFM2N111 combines the exceptional performance of Standard Buck ConverterFairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a FeaturesMicroFET package. This device is designed specifically as a single pack
irlm210a.pdf
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IRLM210AAdvanced Power MOSFETFEATURESBVDSS = 200 Vn Avalanche Rugged TechnologyRDS(on) = 1.5 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = 0.77 An Improved Gate Chargen Extended Safe Operating AreaSOT-223n Lower Leakage Current : 10 A(Max.) @ VDS = 200V2n Lower RDS(ON) : 1.185 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum Ratings
irlm220a.pdf
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IRLM220AAdvanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.13 A Improved Gate Charge Extended Safe Operating AreaSOT-223 Lower Leakage Current : 10 A(Max.) @ VDS = 200V2 Lower RDS(ON) : 0.609 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum R
fsam20sm60a.pdf
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FSAM20SM60ASPMTM (Smart Power Module)General Description FeaturesFSAM20SM60A is an advanced smart power module UL Certified No. E209204(SPM) that Fairchild has newly developed and designed to 600V-20A 3-phase IGBT inverter bridge including controlprovide very compact and high performance ac motorICs for gate driving and protection drives mainly targeting medium speed low-p
2sc5653 ne687m23.pdf
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PRELIMINARY DATA SHEETNPN SILICON TRANSISTOR NE687M23OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE: World's smallest transistor package footprint leads are completely underneath package body0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance0.251 HIGH GAIN BANDWIDTH PRODUCT:fT =
2sc5649 ne856m23.pdf
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PRELIMINARY DATA SHEETNPN SILICON TRANSISTOR NE856M23OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE: World's smallest transistor package footprint leads are completely underneath package body0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance0.251 LOW NOISE FIGURE:NF = 1.4 dB at
2sc5652 ne685m23.pdf
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PRELIMINARY DATA SHEETNPN SILICON TRANSISTOR NE685M23OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE: World's smallest transistor package footprint leads are completely underneath package body0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance0.251 HIGH GAIN BANDWIDTH PRODUCT:fT =
2sc5650 ne681m23.pdf
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PRELIMINARY DATA SHEETNPN SILICON TRANSISTOR NE681M23OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE: World's smallest transistor package footprint leads are completely underneath package body0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance0.25 HIGH GAIN BANDWIDTH PRODUCT: 1fT =
2sc5651 ne688m23.pdf
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PRELIMINARY DATA SHEETNPN SILICON TRANSISTOR NE688M23OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M03 NEW MINIATURE M23 PACKAGE: World's smallest transistor package footprint leads are completely underneath package body0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance HIGH GAIN BANDWIDTH PRODUCT:0.251fT =
buk9m24-40e.pdf
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BUK9M24-40EN-channel 40 V, 24 m logic level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetit
buk7m20-40h.pdf
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BUK7M20-40HN-channel 40 V, 20.0 m standard level MOSFET in LFPAK3329 January 2019 Product data sheet1. General descriptionAutomotive qualified standard level N-channel MOSFET in an LFPAK33 package using Trench 9TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in highperformance automotive applications.2. Features and benefits Fully aut
buk7m21-40e.pdf
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BUK7M21-40EN-channel 40 V, 21 m standard level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK33 (Power33) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 Compliant R
buk9m24-60e.pdf
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BUK9M24-60EN-channel 60 V, 24 m logic level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetit
buk9m20-40h.pdf
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BUK9M20-40HN-channel 40 V, 20.0 m logic level MOSFET in LFPAK3329 January 2019 Product data sheet1. General descriptionAutomotive qualified logic level N-channel MOSFET in an LFPAK33 package using Trench 9TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in highperformance automotive applications.2. Features and benefits Fully automotiv
buk7m27-80e.pdf
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BUK7M27-80EN-channel 80 V, 27 m standard level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK33 (Power33) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 Compliant R
buk7m22-80e.pdf
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BUK7M22-80EN-channel 80 V, 22 m standard level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK33 (Power33) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 Compliant R
buk9m28-80e.pdf
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BUK9M28-80EN-channel 80 V, 28 m logic level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetit
irfm220a.pdf
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Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.13 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V2 Low RDS(ON) : 0.626 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va
irfm214a.pdf
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Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 0.64 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V2 Lower RDS(ON) : 1.393 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic
irfm210a.pdf
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Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 0.77 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V2 Low RDS(ON) : 1.169 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va
irfm224a.pdf
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Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 1.1 Rugged Gate Oxide Technology Lower Input CapacitanceID = 0.92 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V2 Low RDS(ON) : 0.742 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va
bsm25gal120dn2.pdf
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BSM 25 GAL 120 DN2IGBT Power Module Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 25 GAL 120 DN2 1200V 38A HALF BRIDGE GAL 1 C67076-A2009-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200
sh8m24.pdf
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4V Drive Nch+Pch MOSFET SH8M24 Structure Dimensions (Unit : mm) Silicon N-channel / P-channel MOSFET SOP8Features 1) Low on-resistance. 2) Built-in G-S protection diode. 3) Small surface mount package (SOP8). Application Switching Each lead has same dimensionsPackaging specifications Inner circuit (8) (7) (6) (5)Package TapingType Code TBBasic
us6m2.pdf
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US6M2 Transistors 2.5V Drive Nch+Pch MOSFET US6M2 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET / TUMT6Silicon P-channel MOSFET Features 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in G-S Protection Diode. Abbreviated symbol : M02 ApplicationsSwitching
em6m2.pdf
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1.2V Drive Nch+Pch MOSFET EM6M2 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET / EMT6Silicon P-channel MOSFET Features 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (1.2V drive). 4) Built-in G-S Protection Diode. Each lead has same dimensionsAbbreviated symbol : M02 Applications Inner circuit Switch
sp8m24fra.pdf
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SP8M24FRADatasheet45V Nch+Pch Power MOSFETlOutlinelTr1:Nch Tr2:PchSymbolVDSS 45V -45V SOP8RDS(on)(Max.) 46m 63mID 4.5A 3.5APD 2.0W lFeaturesllInner circuitl1) Low on - resistance2) Small Surface Mount Package (SOP8)3) Pb-free lead plating ; RoHS compliant4) Halogen Free5) AEC-Q101 QualifiedlPa
sp8m21fra.pdf
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SP8M21SP8M21FRATransistorsAEC-Q101 Qualified4V Drive Nch+Pch MOSFETSP8M21SP8M21FRA Structure Dimensions (Unit : mm)Silicon N-channel MOSFET / SOP8Silicon P-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S protection diode. 3) Small and surface mount package (SOP8). Each lead has same dimensions ApplicationsSwitching Package specifications Inn
tt8m2.pdf
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2.5V Drive Nch MOSFET 1.5V Drive Pch MOSFET TT8M2 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET/ TSST8Silicon P-channel MOSFET (8) (7) (6) (5) Features 1) Low on-state resistance. (1) (2) (3) (4)2) Low voltage drive. 3) High power package. Abbreviated symbol : M02Each lead has same dimensions Application Inner circuit Switching (8) (7) (6) (5)
smm2348es.pdf
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SMM2348ESwww.vishay.comVishay SiliconixMedical N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY High Quality Manufacturing Process UsingVDS (V) 30SMM Process FlowRDS(on) () at VGS = 10 V 0.024 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.032 100 % Rg and UIS TestedID (A) 8 Material categorization:Configuration SingleFor definiti
sum25p10-138.pdf
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SUM25P10-138Vishay SiliconixP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)c Qg (Typ.) 100 % Rg and UIS Tested0.138 at VGS = - 10 V - 16.3 Material categorization:0.141 at VGS = - 7.5 V - 16.1 24 nCFor definitions of compliance please see- 100www.vishay.com/doc?999120.142 at VGS = - 6 V - 16.
sqm25n15-52.pdf
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SQM25N15-52www.vishay.comVishay SiliconixAutomotive N-Channel 150 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 150 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.052 100 % Rg and UIS TestedID (A) 25 AEC-Q101 QualifieddConfiguration Single Material categorization:For definitions of compliance pleas
sum90n08-6m2p.pdf
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SUM90N08-6m2PVishay SiliconixN-Channel 75-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A) Qg (Typ) 175 C Junction Temperature0.0062 at VGS = 10 V75 RoHS90d 75 100 % Rg and UIS Tested COMPLIANTAPPLICATIONS Power Supply- Secondary Synchronous Rectification IndustrialDTO-263 GG D S Top Vie
sqm200n04-1m1l.pdf
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SQM200N04-1m1Lwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0011 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.0013 AEC-Q101 QualifieddID (A) 200 Material categorization:Configuration Sin
sqd100n03-3m2l.pdf
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SQD100N03-3m2Lwww.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURES TrenchFET Power MOSFETPRODUCT SUMMARY 100 % Rg and UIS TestedVDS (V) 30 AEC-Q101 QualifieddRDS(on) () at VGS = 10 V 0.0032 Material categorization:RDS(on) () at VGS = 4.5 V 0.0039For definitions of compliance please seeID (A) 100www.vishay.com/doc?
sum90n03-2m2p.pdf
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SUM90N03-2m2PVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested Material categorization:0.0022 at VGS = 10 V 9030 82 nCFor definitions of compliance please see0.0027 at VGS = 4.5 V 90www.vishay.com/doc?99912TO-263APPLICATIONSD OR-ing
sup90n08-8m2p.pdf
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SUP90N08-8m2PVishay SiliconixN-Channel 75 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) RDS(on) () ID (A) Qg (Typ) 175 C Junction Temperature75 0.0082 at VGS = 10 V 100 % Rg and UIS Tested90d 58 Material categorization:For definitions of compliance please seewww.vishay.com/doc?99912TO-220AB APPLICATIONS Power S
sum27n20-78.pdf
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SUM27N20-78Vishay SiliconixN-Channel 200 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.078 at VGS = 10 V 27 Low Thermal Resistance Package2000.083 at VGS = 6 V 26 PWM Optimized for Fast Switching Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-263 Is
sqm200n04-1m7l.pdf
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SQM200N04-1m7Lwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 40 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.0017 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V 0.0020 AEC-Q101 qualified dID (A) 200Configuration Single Material categorization:
sum90n10-8m2p.pdf
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SUM90N10-8m2PVishay SiliconixN Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) RDS(on) () ID (A) Qg (Typ) 175 C Junction TemperatureRoHS0.0082 at VGS = 10 V100COMPLIANT90d 97 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Supply- Secondary Synchronous Rectification
sqm200n04-1m8.pdf
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SQM200N04-1m8www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 40 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.0018 100 % Rg and UIS testedID (A) 200 AEC-Q101 qualified dConfiguration SinglePackage TO-263-7L Material categorization: for definitions
sum23n15-73.pdf
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SUM23N15-73Vishay SiliconixN-Channel 150 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.073 at VGS = 10 V 23 Low Thermal Resistance Package1500.077 at VGS = 6 V 22.5 PWM Optimized Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchTO-2
pn2906-a pm2907-a.pdf
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145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
cmpdm202ph.pdf
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CMPDM202PHSURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMPDM202PH SILICON MOSFETis a High Current P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers High Current, Low rDS(ON), Low Threshold Volta
cdm22010-650.pdf
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CDM22010-650www.centralsemi.comSILICON N-CHANNEL POWER MOSFETDESCRIPTION:10 AMP, 650 VOLTThe CENTRAL SEMICONDUCTOR CDM22010-650 is a high current, 650 Volt N-Channel power MOSFET designed for high voltage, fast switching applications such as Power Factor Correction (PFC), lighting and power inverters. This MOSFET combines high voltage capability with low rDS(ON), low thres
cmpdm203nh.pdf
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CMPDM203NHSURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMPDM203NH SILICON MOSFETis a High Current N-Channel Enhancement-mode Silicon MOSFET, manufactured by the N-Channel DMOS Process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers High Current, Low rDS(ON), Low Threshold Volta
dmp22m2ups.pdf
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DMP22M2UPS Green20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package Cooler Running Applications BVDSS RDS(ON) max TC = +25C High Conversion Efficiency Low RDS(ON) Minimizes On State Losses 2.5m @ VGS = -10V -60A -20V
auirl7766m2tr.pdf
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AUTOMOTIVE GRADE AUIRL7766M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 100V Optimized for Automotive DC-DC and other Heavy Load Applications RDS(on) typ. 8.0m Logic Level Gate Drive max. 10m Exceptionally Small Footprint and Low Profile ID (Silicon Limited) 51A High Power Density Qg (typical) 44nC L
auirf8736m2tr.pdf
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AUTOMOTIVE GRADE AUIRF8736M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 1.3m other Heavy Load Applications max. 1.9m Exceptionally Small Footprint and Low Profile High Power Density ID (Silicon Limited) 137A Low Parasitic Paramete
auirf7648m2tr.pdf
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AUTOMOTIVE GRADE AUIRF7648M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 60V Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 5.5m Exceptionally Small Footprint and Low Profile max. 7.0m High Power Density ID (Silicon Limited) 68A Low Parasitic Parameters Qg (typic
auirl7736m2tr.pdf
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AUTOMOTIVE GRADE AUIRL7736M2TR Automotive DirectFET Power MOSFET Logic LevelV(BR)DSS 40V Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 2.2m other Heavy Load Applications max. 3.0m Exceptionally Small Footprint and Low Profile ID (Silicon Limited) 112A High Power Density Qg (typical) 52nC
auirf7675m2tr.pdf
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AUTOMOTIVE GRADE AUIRF7675M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 150V Optimized for Class D Audio Amplifier Applications Low Rds(on) for Improved Efficiency RDS(on) typ. 47m Low Qg for Better THD and Improved Efficiency max. 56m Low Qrr for Better THD and Lower EMI Rg (typical) 1.2 Low Parasiti
igcm20f60ha.pdf
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D a t a S h e e t , Aug. 2010 Control Integrated POwer System (CIPOS) IGCM2 0F60HA http://www.lspst.com F o r P o w e r M a n a g e m e n t A p p l i c a t i o n CIPOS IGCM20F60HA Revision History: 2010-08 Ver.1.1 Previous Version: Datasheet Ver. 1.0 Page Subjects (major changes since last revision) 11 tFLTCLR Authors: Junho Song, Junbae Lee and Daewoong Chung E
bsm200gb120dlc.pdf
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Technische Information / technical informationIGBT-ModuleBSM200GB120DLCIGBT-modules62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emitter voltageKollektor-Dauergleichstro
auirf7734m2 auirf7734m2tr.pdf
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AUTOMOTIVE GRADE AUIRF7734M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 3.8m Exceptionally Small Footprint and Low Profile max. 4.9m High Power Density ID (Silicon Limited) 72A Low Parasitic Parameters Qg (typic
igcm20f60ga.pdf
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D a t a S h e e t , Aug. 2010 Control Integrated POwer System (CIPOS) IGCM2 0F60G A http://www.lspst.com F o r P o w e r M a n a g e m e n t A p p l i c a t i o n CIPOS IGCM20F60GA Revision History: 2010-08 Ver.1.1 Previous Version: Datasheet Ver. 1.0 Page Subjects (major changes since last revision) 11 tFLTCLR Authors: Junho Song, Junbae Lee and Daewoong Chung
auirf7736m2tr.pdf
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AUTOMOTIVE GRADE AUIRF7736M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 2.5m Exceptionally Small Footprint and Low Profile max. 3.0m High Power Density ID (Silicon Limited) 108A Low Parasitic Parameters Qg (typi
irf60dm206.pdf
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StrongIRFET IRF60DM206 DirectFET N-Channel Power MOSFET Application Brushed motor drive applications VDSS 60V BLDC motor drive applications RDS(on) typ. Battery powered circuits 2.2m Half-bridge and full-bridge topologies max 2.9m Synchronous rectifier applications Resonant mode power supplies ID 130A
ixfh21n50 ixfh24n50 ixfh26n50 ixfm21n50 ixfm24n50 ixfm26n50 ixft24n50 ixft26n50.pdf
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VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM21N50 500 V 21 A 0.25 Power MOSFETsIXFH/IXFM/IXFT24N50 500 V 24 A 0.23 IXFH/IXFT26N50 500 V 26 A 0.20 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr 250 ns TO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to
ixth15n60 ixtm15n60 ixth20n60 ixtm20n60.pdf
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Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine
ixth20n60 ixtm20n60.pdf
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IXTH 20N60 VDSS = 600 VMegaMOSTMFETIXTM 20N60 ID25 = 20 ARDS(on) = 0.35 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C 15N60 15 ATO-204 AE (IXTM)20N60 20 AIDM TC = 25C, p
vwm270-0075x2.pdf
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VWM 270-0075X2VDSS = 75 VThree phase full bridgeID25 = 270 Awith Trench MOSFETsRDS(on) = 2.1 mL+G3 G5T1 T3 T5G1S3S5S1L1L2L3G4 G6T2 T4 T6G2S4S6S2L-ApplicationsMOSFET T1 - T6AC drivesSymbol Conditions Maximum Ratings in automobilesVDSS TVJ = 25C to 150C 75 V - electric power steering VGS 20 V - starter generator in indu
ixgm25n100.pdf
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VCES IC25 VCE(sat)Low VCE(sat) IXGH/IXGM 25 N100 1000 V 50 A 3.5 VHigh speed IGBT IXGH/IXGM 25 N100A 1000 V 50 A 4.0 VSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 M 1000 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C50 AIC90 TC = 90C25 A TO-204 AE (IXGM)ICM TC = 25C, 1 m
fdm21-05qc fmd21-05qc fdm21-05qc.pdf
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FMD 21-05QCFDM 21-05QCID25 = 21 AQ-ClassVDSS = 500 VPower MOSFETsRDSon typ. = 190 mChopper Topologiesin ISOPLUS i4-PACTMFMD FDM3 3Preliminary data5441152 2Features MOSFET Q-Class Power MOSFET technologySymbol Conditions Maximum Ratings - low RDSon- low gate charge for high frequencyVDSS TVJ = 25C to 150C 500 Voperat
ixgh20n60-a ixgm20n60-a.pdf
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VCES IC25 VCE(sat)Low VCE(sat) IGBT IXGH/IXGM 20 N60 600 V 40 A 2.5 VHigh speed IGBT IXGH/IXGM 20 N60A 600 V 40 A 3.0 VSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C40 AIC90 TC = 90C20 A TO-204 AE (IXGM)ICM TC = 25C, 1 ms
ixgm25n100a.pdf
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VCES IC25 VCE(sat)Low VCE(sat) IXGH/IXGM 25 N100 1000 V 50 A 3.5 VHigh speed IGBT IXGH/IXGM 25 N100A 1000 V 50 A 4.0 VSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 M 1000 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C50 AIC90 TC = 90C25 A TO-204 AE (IXGM)ICM TC = 25C, 1 m
ixfh15n60 ixfh20n60 ixfm15n60 ixfm20n60.pdf
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VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM 15 N60 600 V 15 A 0.50 WPower MOSFETsIXFH/IXFM 20 N60 600 V 20 A 0.35 Wtrr 250 nsN-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 MW 600 V(TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 2
fmm22-05pf.pdf
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Advance Technical InformationPolarHVTM HiPerFETVDSS = 500VFMM22-05PFN-Channel Power MOSFETID25 = 13APhase Leg Topology RDS(on) 270m 33T1trr(max) 200ns5544T2ISOPLUS i4-PakTM1122Symbol Test Conditions Maximum RatingsTJ -55 ... +150 CTJM 150 C1Tstg -55 ... +150 CIsolated TabVIS
fmm22-06pf.pdf
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Advance Technical InformationPolarHVTM HiPerFETVDSS = 600VFMM22-06PFN-Channel Power MOSFETID25 = 12APhase leg Topology RDS(on) 350m 33T1trr(max) 200ns5544T2112 ISOPLUS i4-PakTM2Symbol Test Conditions Maximum RatingsTJ -55 ... +150 CTJM 150 C1Tstg -55 ... +150 CIsolated TabVISO
ixth21n50 ixth24n50 ixtm21n50 ixtm24n50.pdf
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VDSS ID25 RDS(on)MegaMOSTMFETIXTH / IXTM 21N50 500 V 21 A 0.25 IXTH / IXTM 24N50 500 V 24 A 0.23 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VD (TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C 21N50 21 A
m28s-c.pdf
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M28S-BMCCMicro Commercial ComponentsTMM28S-C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311M28S-DPhone: (818) 701-4933Fax: (818) 701-4939Features Capable of 0.625Watts of Power Dissipation. NPN Silicon Collector-current 1.0APlastic-Encapsulate Collector-base Voltage 40V Operating and storage junction temperature range: -55OC to +1
m28s-b.pdf
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M28S-BMCCMicro Commercial ComponentsTMM28S-C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311M28S-DPhone: (818) 701-4933Fax: (818) 701-4939Features Capable of 0.625Watts of Power Dissipation. NPN Silicon Collector-current 1.0APlastic-Encapsulate Collector-base Voltage 40V Operating and storage junction temperature range: -55OC to +1
m28s-d.pdf
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M28S-BMCCMicro Commercial ComponentsTMM28S-C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311M28S-DPhone: (818) 701-4933Fax: (818) 701-4939Features Capable of 0.625Watts of Power Dissipation. NPN Silicon Collector-current 1.0APlastic-Encapsulate Collector-base Voltage 40V Operating and storage junction temperature range: -55OC to +1
om200f120cmc.pdf
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205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246,www.omnirel.comELECTRICAL CHARACTERISTICS: OM200F120CMC (Tc= 25C unless otherwise specified)Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICSCollector Emitter Breakdown Voltage, VCE=0V VCES 1200 VZero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 10AGate Emitter Leakage Current, VGE=+/-15
om200l120cmc.pdf
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205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, ww.omnirel.comELECTRICAL CHARACTERISTICS: OM200L120CMC (Tc= 25C unless otherwise specified)Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICSCollector Emitter Breakdown Voltage, VCE=0V VCES 1200 VZero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 2AGate Emitter Leakage Current, VGE=+/-15V
om200f120cma.pdf
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205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.comELECTRICAL CHARACTERISTICS: OM200F120CMA (Tc= 25C unless otherwise specified)Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICSCollector Emitter Breakdown Voltage, VCE=0V VCES 1200 VZero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 10AGate Emitter Leakage Current, VGE=+/-1
om200l120cmd.pdf
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205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.comELECTRICAL CHARACTERISTICS: OM200L120CMD (Tc= 25C unless otherwise specified)Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICSCollector Emitter Breakdown Voltage, VCE=0V VCES 1200 VZero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 2AGate Emitter Leakage Current, VGE=+/-20
om200f120cmd.pdf
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205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.comELECTRICAL CHARACTERISTICS: OM200F120CMD (Tc= 25C unless otherwise specified)Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICSCollector Emitter Breakdown Voltage, VCE=0V VCES 1200 VZero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 10AGate Emitter Leakage Current, VGE=+/-1
om200l120cma.pdf
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205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.comELECTRICAL CHARACTERISTICS: OM200L120CMA (Tc= 25C unless otherwise specified)Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICSCollector Emitter Breakdown Voltage, VCE=0V VCES 1200 VZero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 2AGate Emitter Leakage Current, VGE=+/-15
om23p06st.pdf
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OM23P06ST OM20P10ST OM12P10ST OM8P20ST OM8P25ST OM2P50STOM23P06SA OM20P10SA OM12P10SA OM8P20SA OM8P25SA OM2P50SAPOWER MOSFET IN HERMETIC ISOLATEDJEDEC PACKAGE, P-CHANNEL60V To 500V P-Channel MOSFET In AHermetic PackageDFEATURES Isolated Hermetic Metal Package P-ChannelG Fast Switching, Low Drive Current Ease of Paralleling For Added Power Available Scree
fdfm2p110.pdf
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Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
irlm220a.pdf
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Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
mtm23227.pdf
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This product complies with the RoHS Directive (EU 2002/95/EC).MTM23227Silicon N-channel MOSFETFor switching Overview PackageMTM23227 is the l N-channel MOS FET that is highly suitable ofr DC-DC Codeconverter and other switching circuits. SMini3-G1-B Pin Name Features 1: Gate 2: Source Realization of low on-resistance, using extremely fine process (4.6 mW
mtm23110.pdf
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MTM23110Silicon P-channel MOSFETFor switching Overview PackageMTM23110 is P-channel MOS FET for load switch circuits. Code SMini3-G1-B Features Pin Name Low voltage drive (1.8 V, 2.5 V, 4 V) 1: Gate Realization of low on-resistance, using extremely fine process 2: Source Contributes to miniaturization of sets, reduction of component count. 3:
mtm232270lbf.pdf
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Doc No. TT4-EA-13115Revision. 2Product StandardsMOS FETMTM232270LBFMTM232270LBFSilicon N-channel MOS FETUnit : mm For switching2.0MTM13227 in SMini3 type package0.3 0.153 Features Low drain-source On-state resistance : RDS(on) typ = 85 m (VGS = 4.0 V) Low drive voltage: 2.5 V driveHalogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 c
mtm23123.pdf
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MTM23123Silicon P-channel MOSFETFor switching Overview PackageMTM23123 is P-channel MOS FET for load switch circuits. Code SMini3-G1-B Features Pin Name Low voltage drive (2.5 V, 4 V) 1: Gate Realization of low on-resistance, using extremely fine process 2: Source Contributes to miniaturization of sets, reduction of component count. 3: Drain E
mtm232230lbf.pdf
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Doc No. TT4-EA-12901Revision. 3MOS FETMTM232230LBFMTM232230LBFNMOS FETUnit : mm 2.00.3 0.153 RDS(on) typ = 20 m (VGS = 4.0 V) 2.5 V (EU RoHS / UL-94
mtm23223.pdf
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MTM23223Silicon N-channel MOSFETFor switching Overview PackageMTM23223 is N-channel MOS FET for load switch circuits. Code SMini3-G1-B Pin Name Features 1: Gate Low voltage drive (2.5 V, 4 V) 2: Source Realization of low on-resistance, using extremely fine process 3: Drain Contributes to miniaturization of sets, reduction of component count.
utm2054l-ab3-r utm2054g-ab3-r utm2054l-ae3-r utm2054g-ae3-r.pdf
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UNISONIC TECHNOLOGIES CO., LTD UTM2054 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTM2054 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 35m @VGS=10V * RDS(ON)= 45m @VGS=4.5V * RDS(ON)= 11
utm2513.pdf
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UNISONIC TECHNOLOGIES CO., LTD UTM2513 Power MOSFET N-CHANNEL ENHANCEMENT MODE FEATURES * RDS(ON) = 10.5m(typ.) @VGS = 10 V * RDS(ON) = 16m(typ.) @VGS = 4.5 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain Lead-free: UTM2513L Halogen-free: UTM2513G 1.Gate3.Source ORDERING INFORMATION
m28s.pdf
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UNISONIC TECHNOLOGIES CO., LTD M28S NPN SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER1 FEATURES TO-92* Excellent HFE Linearity * High DC Current Gain 3* High Power Dissipation APPLICATION 1* Audio Output Driver Amplifier 2* General Purpose Switch SOT-23 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Halogen Free
utm2054.pdf
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UNISONIC TECHNOLOGIES CO., LTD UTM2054 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTM2054 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 35m @VGS=10V * RDS(ON)= 45m @VGS=4.5V * RDS(ON)= 11
apt20m22lvfr.pdf
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APT20M22LVFR200V 100A 0.022POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche T
apt20m22jvr.pdf
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APT20M22JVR200V 97A 0.022POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche
apt20m22.pdf
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APT20M22JVR200V 97A 0.022POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche
apt20m20b2fll.pdf
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APT20M20B2FLLAPT20M20LFLL200V 100A 0.020WTMFREDFET POWER MOS 7B2FLLPower MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchingT-MAXTO-264losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with excepti
apt20m20b2fllg apt20m20lfllg.pdf
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APT20M20B2FLLAPT20M20LFLL200V 100A 0.020RFREDFET POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching loss
apt20m20b2ll.pdf
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APT20M20B2LLAPT20M20LLL200V 100A 0.020WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast
apt20m22b2vfr.pdf
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APT20M22B2VFR200V 100A 0.022POWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanch
apt20m26wvr.pdf
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APT20M26WVR200V 65A 0.026POWER MOS VTO-267Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower
apt10m25bvr.pdf
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APT10M25BVR100V 75A 0.025POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower
apt10m25svr.pdf
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APT10M25SVR100V 75A 0.025POWER MOS VD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower
apt20m22jvfr.pdf
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APT20M22JVFR200V 97A 0.022POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Fast Recovery Body Diode
apt20m20b2llg apt20m20lllg.pdf
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APT20M20B2LLAPT20M20LLL200V 100A 0.020R POWER MOS 7 MOSFETT-MAXPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong wi
apt10m25.pdf
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APT10M25BVFR100V 75A 0.025POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes
apt10m25bvfr.pdf
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APT10M25BVFR100V 75A 0.025POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes
apt20m20jll.pdf
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APT20M20JLL200V 106A 0.020 WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's
apt20m22b2vr.pdf
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APT20M22B2VR200V 100A 0.022POWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D L
apt20m22lvr.pdf
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APT20M22LVR200V 100A 0.022POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.. Faster Switching 100% Avalanche Tested D Low
apt20m20jfll.pdf
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APT20M20JFLL200V 106A 0.020WTMFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent wi
sum202mn.pdf
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SUM202MNP-Channel MOSFET + PNP BJTIntegrated Power MOSFET with PNP Low VCE(sat) Switching Transistor DFN-8 8 This integrated device represents a new level of safety andboard-space reduction by combining the 20V P-Channel FET with a1 PNP Silicon Low VCE(sat) switching transistor. This newly integratedproduct provides higher efficiency and accuracy for battery poweredMOSFET
sum201mn.pdf
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SUM201MNP-Channel MOSFET + PNP BJTIntegrated Power MOSFET with PNP Low VCE(sat) Switching Transistor DFN-8 This integrated device represents a new level of safety andboard-space reduction by combining the 20V P-Channel FET with aPNP Silicon Low VCE(sat) switching transistor. This newly integratedproduct provides higher efficiency and accuracy for battery poweredMOSFET portab
cpm2-1200-0025b.pdf
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VDS 1200 VID @ 120C 50 ACPM2-1200-0025B RDS(on) 25 m Silicon Carbide Power MOSFET TM Z-FET MOSFETN-Channel Enhancement ModeFeatures Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS CompliantBenefits
ccs050m12cm2.pdf
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VDS 1.2 kVCCS050M12CM21.2kV, 50A Silicon Carbide RDS(on) (TJ = 25C) 25 mSix-Pack (Three Phase) ModuleEOFF (TJ = 150C) 0.6 mJZ-FETTM MOSFET and Z-RecTM DiodeFeatures Package Ultra Low Loss Zero Reverse Recovery Current Zero Turn-off Tail Current High-Frequency Operation Positive Temperature Coefficient on VF and VDS(on) Cu Baseplate, AlN DBCSy
bsm200gb170dlc.pdf
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Technische Information / Technical InformationIGBT-ModuleBSM 200 GB 170 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-SperrspannungTvj = 25C VCES 1700 Vcollector-emitter voltageTC = 80 C IC,nom. 200 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 400 APeriodischer Kollek
bsm200gd60dlc.pdf
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Technische Information / Technical InformationIGBT-ModuleBSM 200 GD 60 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 600 Vcollector-emitter voltageTC= 45C IC,nom. 200 AKollektor-DauergleichstromDC-collector currentTC= 25C IC 226 APeriodischer Kollektor Spitzenstrom
bsm25gb120dn2.pdf
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BSM 25 GB 120 DN2IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 25 GB 120 DN2 1200V 38A HALF-BRIDGE 1 C67076-A2109-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate-emitter voltage VGE
bsm20gd60dlc e3224.pdf
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Technische Information / Technical InformationIGBT-ModuleBSM 20 GD 60 DLC E3224IGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 600 Vcollector-emitter voltageTC= 80C IC,nom. 20 AKollektor-DauergleichstromDC-collector currentTC= 25C IC 32 APeriodischer Kollektor Spitzenst
bsm200gb120dlc.pdf
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Technische Information / Technical InformationIGBT-ModuleBSM200GB120DLCIGBT-Modulesvorlufige Datenpreliminary dataHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 1200 Vcollector-emitter voltageTC = 80 C IC,nom. 200 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 420
bsm25gd120dn2.pdf
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BSM 25 GD 120 DN2IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 25 GD 120 DN2 1200V 35A ECONOPACK 2 C67076-A2505-A67BSM 25 GD120DN2E3224 1200V 35A ECONOPACK 2K C67070-A2505-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1
bsm200gal120dlc.pdf
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Technische Information / technical informationIGBT-ModuleBSM200GAL120DLCIGBT-modules62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Vorlufige Daten / preliminary dataHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emit
bsm200ga120dn2 bsm200ga120dn2s.pdf
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BSM 200 GA 120 DN2IGBT Power Module Single switch Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 200 GA 120 DN2 1200V 300A SINGLE SWITCH 1 C67076-A2006-A70BSM 200 GA 120 DN2 S 1200V 300A SSW SENSE 1 C67070-A2006-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollect
bsm200gb120dn2.pdf
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BSM 200 GB 120 DN2IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 200 GB 120 DN2 1200V 290A HALF-BRIDGE 2 C67070-A2300-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate-emitter voltage VGE
bsm200ga120dlcs.pdf
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Technische Information / technical informationIGBT-ModuleBSM200GA120DLCSIGBT-modules62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emitter voltageKollektor-Dauergleichstr
bsm200gal120dn2.pdf
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BSM 200 GAL 120 DN2IGBT Power Module Single switch with chopper diode at collector Chopper diode like diode of BSM300GA120DN2 Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 200 GAL 120 DN2 1200V 290A HB 200GAL C67070-A2301-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE =
bsm200ga120dlc.pdf
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Technische Information / technical informationIGBT-ModuleBSM200GA120DLCIGBT-modulesIGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emitter voltageKollektor-Dauergleichstrom T = 80C I 200 ADC-collector current T = 25C I 370 APeriodischer Kollektor Spitzenstromt = 1 ms, T = 80
bsm25gd120dn2 e3224.pdf
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BSM 25 GD 120 DN2 E3224IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 25 GD 120 DN2 1200V 35A ECONOPACK 2 C67076-A2505-A67BSM 25 GD120DN2E3224 1200V 35A ECONOPACK 2K C67070-A2505-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage
bsm200ga170dn2 bsm200ga170dn2s.pdf
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BSM 200 GA 170 DN2IGBT Power Module Single switch Including fast free-wheeling diodes Package with insulated metal base plate RG on,min = 6.8 OhmType VCE IC Package Ordering CodeBSM 200 GA 170 DN2 1700V 290A SINGLE SWITCH 1 C67070-A2705-A67BSM 200 GA 170 DN2 S 1700V 290A SSW SENSE 1 C67070-A2707-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter vo
bym200b170dn2.pdf
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Technische Information / Technical InformationIGBT-ModuleBYM 200 B 170 DN2IGBT-Modulesvorlufige Datenpreliminary dataHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesSperrspannung der Diode Tvj = 25C VCES 1700 VDiode rerverse voltageDauergleichstromTC = 80 C IF 200 ADC forward currentPeriodischer Spitzenstromtp =
bsm200gb60dlc.pdf
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Technische Information / Technical InformationIGBT-ModuleBSM 200 GB 60 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 600 Vcollector-emitter voltageTc= 50C IC,nom. 200 AKollektor-DauergleichstromDC-collector currentTc= 25C IC 230 APeriodischer Kollektor Spitzenstrom
bsm200ga170dlc.pdf
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Technische Information / Technical InformationIGBT-ModuleBSM 200 GA 170 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-SperrspannungVCES 1700 Vcollector-emitter voltageTC = 80 C IC,nom. 200 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 400 APeriodischer Kollektor Spitzens
frm240.pdf
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FRM240D, FRM240R,FRM240H16A, 200V, 0.24 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 16A, 200V, RDS(on) = 0.24TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)
frm234.pdf
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FRM234D, FRM234R,FRM234H7A, 250V, 0.70 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 7A, 250V, RDS(on) = 0.70TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)
frm230.pdf
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FRM230D, FRM230R,FRM230H8A, 200V, 0.50 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 8A, 200V, RDS(on) = 0.50TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)
frm244.pdf
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FRM244D, FRM244R,FRM244H12A, 250V, 0.400 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 12A, 250V, RDS(on) = 0.400TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)
irfm250d.pdf
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IRFM250DMECHANICAL DATANCHANNELDimensions in mm (inches)POWER MOSFETVDSS 200VID(cont) 27.4A RDS(on) 0.100 FEATURES NCHANNEL MOSFET
bds12m2a.pdf
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SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS12M2A High Voltage Hermetic TO-257AB Isolated Metal Package Ideally suited for Power Linear, Switching and general Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO Collector Base Voltage 100V VCEO Collector Emitter Voltage 100V VEBO E
sgm2014am.pdf
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SGM2014AMPreliminaryGaAs N-channel Dual Gate MES FETDescriptionThe SGM2014AM is an N-channel dual gate GaAsMES FET for UHF band low-noise amplification.This FET is suitable for a wide range of applicationsincluding TV tuners, cellular radios, and DBS IFamplifiers.Features Low voltage operation Low noise: NF = 1.5dB (typ.) at 900MHz High gain: Ga = 18dB (typ.) at
scm2016.pdf
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SGM2016ANGaAs N-channel Dual-Gate MES FETDescriptionM-281The SGM2016AN is an N-channel dual-gate GaAsMES FET for UHF-band low-noise amplification. ThisFET is suitable for a wide range of applicationsincluding UHF TV tuners, cellular/cordless phone,and DBS IF amplifiers.Features Ultra-small package Low voltage operation Low noise NF = 1.2dB (typ.) at 900MHz
sgm2014.pdf
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SGM2014ANPreliminaryGaAs N-channel Dual Gate MES FETDescriptionM-281The SGM2014AN is an N-channel dual gate GaAsMES FET for UHF band low-noise amplification.This FET is suitable for a wide range of applicationsincluding TV tuners, cellular radios, and DBS IFamplifiers.Features Ultra small package Low voltage operation Low noise: NF = 1.5dB (typ.) at 900MHz
m28st.pdf
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M28ST 1A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURE High DC Current Gain and Large Current Capability CLASSIFICATION OF hFE (1) Product-Rank M28ST-B M28ST-C M28ST-D Range 300~550 500~700 650~1000 Collector 1Emitter 1112 2Collector 2223Base
sum2153.pdf
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SUM2153 0.81A , 20V , RDS(ON) 310 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SOT-363 These miniature surface mount MOSFETs utilize a high Acell density trench process to provide low RDS(on) and to E Lensure minimal power loss and heat dissipation
m28s.pdf
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M28S 1A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-23 Excellent hFE Linearity A High DC Current Gain L33Top ViewC BCLASSIFICATION OF hFE 11 2Product-Rank M28S-B M28S-C M28S-D 2K ERange 300~550 500~700 650~1000 DMarking 28S Collector H
sgm2306a.pdf
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SGM2306A5A, 30V,RDS(ON) 35m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductDescriptionSOT-89The SGM2306A utilized advanced processing techniques toachieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.The SGM2306A is universally used for all commercial-industrial surface mount applications.
sgm2310a.pdf
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SGM2310A 5 A, 60 V, RDS(ON) 115 m N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 DESCRIPTION AThe SGM2310A utilized advanced processing techniques to 4achieve the lowest possible on-resistance, extremely efficient Top ViewC Band cost-effectiveness device. The SGM231
sgm2305a.pdf
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SGM2305A -3.2 A, -30 V, RDS(ON) 80 m P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES A The SGM2305A provide the designer with best combination of fast switching, 4Top ViewC Blow on-resistance and cost-effectiveness. The SGM2305A is universally preferred
tsm240n03cx.pdf
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TSM240N03CX 30V N-Channel Power MOSFET SOT-23 Key Parameter Performance Pin Definition: 1. Gate Parameter Value Unit 2. Source 3. Drain VDS 30 V VGS = 10V 24 Note: RDS(on) (max) m MSL 1 (Moisture Sensitivity Level) VGS = 4.5V 34 per J-STD-020 Qg 4.1 nC Block Diagram Ordering Information Ordering code Package Packing TSM240N03CX RFG SOT-23 3kpcs /
tsm23n50cn.pdf
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TSM23N50CN 500V N-Channel Power MOSFET TO-3PN Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Drain 3. Source 500 0.22 @ VGS =10V 23 General Description The TSM23N50CN N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide
tsm2323 a07.pdf
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TSM2323 20V P-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Gate 39 @ VGS = -4.5V -4.7 2. Source 3. Drain -20 52 @ VGS = -2.5V -4.1 68 @ VGS = -1.8V -2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch P-Chann
tsm2311cx.pdf
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TSM2311 20V P-Channel MOSFET SOT-23 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 55 @ VGS = -4.5V -4.0 -20 85 @ VGS = -2.5V -2.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch P-Channel MOSFET Orderi
tsm2301a.pdf
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TSM2301A Taiwan Semiconductor P-Channel Power MOSFET -20V, -2.8A, 130m KEY PERFORMANCE PARAMETERS Features PARAMETER VALUE UNIT Advance Trench Process Technology VDS -20 V High Density Cell Design for Ultra Low On-resistance VGS = -4.5V 130 RDS(on) (max) m VGS = -2.5V 190 Application Qg 7.2 nC Telecom power Consumer Electronics SOT-23
tsm2328cx.pdf
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TSM2328 100V N-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 250 @ VGS =10V 1.5 100 General Description The TSM2328 utilized advanced processing techniques to achieve the lowest possible On-Resistance, extremely efficient and cost-effectiveness device. The TSM2328 is universally used for all commercial-in
tsm2314cx.pdf
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TSM2314 20V N-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 33 @ VGS = 4.5V 4.9 40 @ VGS = 2.5V 4.4 20 100 @ VGS = 1.8V 2.9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Orderin
tsm2306cx.pdf
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TSM2306 30V N-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Gate 2. Source 57 @ VGS =10V 3.5 3. Drain 30 94 @ VGS =4.5V 2.8 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No. Pa
tsm2n70ch tsm2n70cp tsm2n70cz.pdf
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TSM2N70 700V N-Channel Power MOSFET Pin Definition: TO-220 TO-251 TO-252 PRODUCT SUMMARY 1. Gate (IPAK) (DPAK) 2. Drain VDS (V) RDS(on)() ID (A) 3. Source 700 6.5 @ VGS =10V 1 General Description The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-st
tsm2310cx.pdf
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TSM2310 20V N-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 33 @ VGS = 4.5V 4 3. Drain 20 40 @ VGS = 2.5V 3.2 100 @ VGS = 1.8V 2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Info
tsm2312cx.pdf
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TSM2312 20V N-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Gate 2. Source 33 @ VGS = 4.5V 4.9 3. Drain 20 40 @ VGS = 2.5V 4.4 51 @ VGS = 1.8V 3.9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering In
tsm210n06cz.pdf
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TSM210N06 60V N-Channel Power MOSFET TO-220 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Drain 3. Source 60 3.1 @ VGS =10V 210 Features Block Diagram Advanced Trench Technology Low RDS(ON) 3.1m (Max.) Low gate charge typical @ 160nC (Typ.) Low Crss typical @ 300pF (Typ.) Ordering Information Part No. Package Packing
tsm2323cx.pdf
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TSM2323 20V P-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Gate 2. Source 39 @ VGS = -4.5V -4.7 3. Drain -20 52 @ VGS = -2.5V -4.1 68 @ VGS = -1.8V -2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch P-C
tsm2302 a07.pdf
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TSM2302 20V N-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Gate 2. Source 65 @ VGS = 4.5V 2.8 3. Drain 20 95 @ VGS = 2.5V 2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No.
tsm2n60ch tsm2n60cp tsm2n60cz.pdf
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TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 TO-252 Pin Definition: PRODUCT SUMMARY (IPAK) (DPAK) 1. Gate 2. Drain VDS (V) RDS(on)() ID (A) 3. Source 600 4.4 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFE
tsm20n50ci tsm20n50cz.pdf
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TSM20N50 500V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 500 0.3 @ VGS =10V 18 General Description The TSM20N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, prov
tsm2307cx.pdf
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TSM2307 30V P-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 95 @ VGS = -10V -3 -30 140 @ VGS = -4.5V -2 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No
tsm2308cx.pdf
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TSM2308 60V N-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 156 @ VGS = 10V 3 60 192 @ VGS = 4.5V 2.1 Block Diagram Features Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application DC-DC Power System Load Switch Ordering Information
tsm2n60scw.pdf
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TSM2N60S 600V N-Channel Power MOSFET SOT-223 Pin Definition: PRODUCT SUMMARY 1. Gate 2. Drain VDS (V) RDS(on)() ID (A) 3. Source 600 5 @ VGS =10V 0.6 General Description The TSM2N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand
tsm2611edcx6.pdf
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TSM2611ED 20V Dual N-Channel MOSFET w/ESD Protected SOT-26 Pin Definition: PRODUCT SUMMARY 1. Source 1 6. Gate 1 VDS (V) RDS(on)(m) ID (A) 2. Drain 1 5. Drain 2 3. Source 2 4. Gate 2 20 @ VGS = 4.5V 6 20 28 @ VGS = 2.5V 5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On resistance ESD Protected HBM
tsm2nb60ch tsm2nb60ci tsm2nb60cp tsm2nb60cz.pdf
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TSM2NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 600 4.4 @ VGS =10V 1 General Description The TSM2NB60 N-Channel Power MOSFET is TO-251 TO-252 (IPAK) (DPAK) produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resi
tsm2303cx.pdf
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TSM2303 30V P-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 180 @ VGS =-10V -1.3 -30 300 @ VGS =-4.5V -1.1 Block Diagram Features Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Portable Devices High Speed Switch Ordering Info
tsm2301acx tsm2301cx.pdf
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TSM2301 20V P-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Gate 130 @ VGS = -4.5V -2.8 2. Source -20 3. Drain 190 @ VGS = -2.5V -2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch P-Channel MOSFET Orderi
tsm2302cx.pdf
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TSM2302 20V N-Channel MOSFET SOT-23 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 65 @ VGS = 4.5V 2.8 20 95 @ VGS = 2.5V 2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No.
tsm2n7000kct.pdf
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TSM2N7000K 60V N-Channel MOSFET TO-92 Pin Definition: PRODUCT SUMMARY 1. Source VDS (V) RDS(on)() ID (mA) 2. Gate 3. Drain 5 @ VGS = 10V 100 60 5.5 @ VGS = 5V 100 Features Block Diagram Low On-Resistance ESD Protection High Speed Switching Low Voltage Drive Ordering Information Part No. Package Packing TSM2N7000KCT B0 TO-92 1Kpcs / Bulk
tsm2n7002kdcu6.pdf
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TSM2N7002KD 60V N-Channel MOSFET SOT-363 PRODUCT SUMMARY Pin Definition: 1. Source 2 6. Drain 2 VDS (V) RDS(on)(m) ID (A) 2. Gate 2 5. Gate 1 3. Drain 1 4. Source 1 2 @ VGS = 10V 300 60 4 @ VGS = 4.5V 200 Features Block Diagram Low On-Resistance ESD Protection High Speed Switching Low Voltage Drive Ordering Information Part No. Package Pa
tsm2318cx.pdf
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TSM2318 40V N-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 45 @ VGS = 10V 3.9 40 62.5 @ VGS = 4.5V 3.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch Stepper Motors Ordering Information Pa
tsm2n7002kcx.pdf
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TSM2N7002KCX Taiwan Semiconductor N-Channel Power MOSFET 60V, 300mA, 2 FEATURES KEY PERFORMANCE PARAMETERS Low On-Resistance PARAMETER VALUE UNIT ESD Protected 2KV VDS 60 V High Speed Switching VGS = 10V 2 Low Voltage Drive RDS(on) (max) VGS = 4.5V 4 Qg 0.4 nC APPLICATION Logic Level translators DC-DC Converter SOT-23 Note
tsm2305cx.pdf
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TSM2305 20V P-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 55 @ VGS =-4.5V -3.2 80 @ VGS =-2.5V -2.7 -20 130 @ VGS =-1.8V -2.0 Block Diagram Features Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Battery Management High Spe
tsm2n7002kcu tsm2n7002kcx.pdf
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TSM2N7002K 60V N-Channel MOSFET SOT-23 SOT-323 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (mA) 2. Source 3. Drain 2 @ VGS = 10V 300 60 4 @ VGS = 4.5V 200 Features Block Diagram Low On-Resistance ESD Protected 2KV High Speed Switching Low Voltage Drive Ordering Information Part No. Package Packing TSM2N7002KCX RF SOT-23
m28s.pdf
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 M28S TRANSISTOR (NPN) 1.EMITTER FEATURES 2.COLLECTOR High DC Current Gain and Large Current Capability 3.BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbo Parameter Value UnitVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Sustaining Voltage 20 V VEBO
fm200cd1d5b.pdf
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SEMICONDUCTORFM200CD1D5BTECHNICAL DATA150V / 200A(Common-Drain)2-PACK MOSFET MODULE FEATURES Low RDS(on)High frequency operationdv/dt ruggednessFast switchingAPPLICATION Battery Management SystemElectric VehicleOUTLINE DRAWINGINTERNAL CIRCUITUnit : mm_ _ _13 0.3 13 0.3 13 0.3+ + +676711 35235424_ _23 0.3 23 0.3+ +
gm200hb12ct.pdf
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SEMICONDUCTORGM200HB12CTTECHNICAL DATA1200V/200A 2 IN ONE PACKAGETENTATIVEFEATURES IGBT New Technology Unit : mmOUTLINE DRAWINGLow VCE(sat)Low Turn-off losses _108.5 0.2+_6.5 0.2+_ _28 0.2 28 0.2+ +Short tail currentPositive temperature coefficientG2E2APPLICATION E1AC & DC Motor controlsG1M6General purpose invertersOptimize
fm200hb1d5b.pdf
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SEMICONDUCTORFM200HB1D5BTECHNICAL DATA150V / 200A(Half - Bridge)2 - PACK MOSFET MODULE FEATURES Low RDS(on)High frequency operationdv/dt ruggednessFast switchingAPPLICATION Motor controlBattery management systemElectric vehicleUnit : mmOUTLINE DRAWINGINTERNAL CIRCUIT_ _ _13 0.3 13 0.3 13 0.3+ + +6 677 1 1 2 3 23545_ _+
aptc60skm24ct1g.pdf
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APTC60SKM24CT1GVDSS = 600V Buck chopper RDSon = 24m max @ Tj = 25C Super Junction MOSFET ID = 95A @ Tc = 25C SiC chopper diode Application AC and DC motor control 115 6 Switched Mode Power Supplies Features Q1 - Ultra low RDSon 7- Low Miller capacitance NTC8- Ultra low gate charge 3- Avalanche energy rated 4- Very rugged CR2
aptm50am24scg.pdf
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APTM50AM24SCG Phase leg VDSS = 500V Series & SiC parallel diodes RDSon = 24m typ @ Tj = 25C ID = 150A @ Tc = 25C MOSFET Power Module Application Motor control VBUS Switched Mode Power Supplies Uninterruptible Power Supplies Features Q1 Power MOS 7 MOSFETs G1- Low RDSon OUT- Low input and Miller capacitance S1- Low gate charge - Aval
aptc60dam24ct1g.pdf
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APTC60DAM24CT1GVDSS = 600V Boost chopper RDSon = 24m max @ Tj = 25C Super Junction MOSFET ID = 95A @ Tc = 25C Power Module Application AC and DC motor control 5 6 11 Switched Mode Power Supplies Power Factor Correction Features CR1 - Ultra low RDSon 3NTC- Low Miller capacitance 4Q2- Ultra low gate charge - Avalanche energy rated
aptc60am24sctg.pdf
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APTC60AM24SCTG VDSS = 600V Phase leg RDSon = 24m max @ Tj = 25C Series & SiC parallel diodes ID = 95A @ Tc = 25C Super Junction MOSFET Power Module Application Motor control Switched Mode Power Supplies Uninterruptible Power Supplies NTC2VBUSFeatures Q1- Ultra low RDSon - Low Miller capacitance G1- Ultra low gate charge OUT- Aval
m28s.pdf
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M28 STRANSISTOR(NPN)SOT23 FEATURES Excellent hFE Linearity High DC Current Gain MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 40 V CBO 3. COLLECTOR V Collector-Emitter Voltage 20 V CEOVEBO Emitter-Base Voltage 6 V I Collector Current 1 A CP Collector Power Dissipation 200 mW
cem2133.pdf
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CEM2133P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-20V, -10A, RDS(ON) = 18m @VGS = -4.5V. RDS(ON) = 27m @VGS = -2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead-free plating ; RoHS compliant.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA =
cem2182.pdf
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CEM2182N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES20V, 9.3A, RDS(ON) = 18m @VGS = 4.5V. RDS(ON) = 24m @VGS = 2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead-free plating ; RoHS compliant.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25
cem26138.pdf
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CEM26138Dual N-Channel Enhancement Mode Field Effect TransistorPRELIMINARYFEATURES30V, 7.6A, RDS(ON) = 22m @VGS = 10V. RDS(ON) = 33m @VGS = 4.5V.20V, 6A, RDS(ON) = 27m @VGS = 4.5V. RDS(ON) = 40m @VGS = 2.5V.D1 D1 D2 D2Super high dense cell design for extremely low RDS(ON).8 7 6 5High power and current handing capability.Lead-free plating ; RoHS compliant.Su
cem2187.pdf
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CEM2187P-Channel Enhancement Mode Field Effect TransistorFEATURES-20V, -7.6A, RDS(ON) = 22m @VGS = -4.5V. RDS(ON) = 32m @VGS = -2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired. D1 D1 D2 D28 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS TA = 25 C unle
cem2163.pdf
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CEM2163P-Channel Enhancement Mode Field Effect TransistorFEATURES-20V, -8.9A, RDS(ON) = 20m @VGS = -4.5V. RDS(ON) = 30m @VGS = -2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless oth
cem2281.pdf
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CEM2281P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-20V, -7.2A, RDS(ON) = 30m @VGS = -4.5V. RDS(ON) = 43m @VGS = -2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25
cem2939.pdf
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CEM2939Dual Enhancement Mode Field Effect Transistor (N and P Channel)FEATURES520V, 6.5A, RDS(ON) = 30m @VGS = 4.5V. RDS(ON) = 43m @VGS = 2.5V.-20V, -4.8A, RDS(ON) = 55m @VGS = -4.5V. RDS(ON) = 90m @VGS = -2.5V.Super high dense cell design for extremely low RDS(ON).D1 D1 D2 D2High power and current handing capability.8 7 6 5Lead free product is acquired.Sur
cem2401.pdf
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CEM2401P-Channel Enhancement Mode Field Effect TransistorFEATURES-20V, -6A, RDS(ON) = 44m @VGS = -4.5V. RDS(ON) = 65m @VGS = -2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless other
cem2192.pdf
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CEM2192Dual N-Channel Enhancement Mode Field Effect TransistorPRELIMINARYFEATURES20V, 8A, RDS(ON) = 24m @VGS = 4.5V. RDS(ON) = 35m @VGS = 2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead-free plating ; RoHS compliant.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA
cem2539.pdf
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CEM2539Dual Enhancement Mode Field Effect Transistor (N and P Channel)FEATURESD1 D2520V, 7.5A, RDS(ON) = 22m @VGS = 10V. RDS(ON) = 24m @VGS = 4.5V.*1KG1 G2 RDS(ON) = 33m @VGS = 2.5V.-20V, -4.0A, RDS(ON) = 80m @VGS = -10V. RDS(ON) = 100m @VGS = -4.5V.S1 S2 RDS(ON) = 150m @VGS = -2.5V.D1 D1 D2 D28 7 6 5Super high dense cell design for extremely lo
cem2539a.pdf
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CEM2539ADual Enhancement Mode Field Effect Transistor (N and P Channel)FEATURESD1 D2520V, 7.5A, RDS(ON) = 22m @VGS = 10V. RDS(ON) = 25m @VGS = 4.5V.G1 G2 RDS(ON) = 40m @VGS = 2.5V.-20V, -4A, RDS(ON) = 80m @VGS = -10V. RDS(ON) = 100m @VGS = -4.5V.S1 S2 RDS(ON) = 150m @VGS = -2.5V.D1 D1 D2 D28 7 6 5Super high dense cell design for extremely low RDS(
cem2407.pdf
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CEM2407P-Channel Enhancement Mode Field Effect TransistorFEATURES-20V, -5.3A, RDS(ON) = 45m @VGS = -4.5V. RDS(ON) = 65m @VGS = -2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired. D1 D1 D2 D28 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS TA = 25 C unle
m28s.pdf
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Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GMM28SFEATURESFEATURES FEATURESHigh hFE NPN silicon NPN MAXIMUM RATINGS (Ta=25 )MAXIMUM RATINGS (Ta=25)MAXIMUM RATINGS (Ta=25 )CHARACTERISTIC Symbol
gm2302.pdf
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Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM2302SOT-23 (SOT-23 Field Effect Transistors)N-Channel Enhancement-Mode MOS FETsN-Channel Enhancement-Mode MOS FETsN-Channel Enhancement-Mode MOS FET
gm2301.pdf
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Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM2301SOT-23 (SOT-23 Field Effect Transistors)P-Channel Enhancement-Mode MOS FETsP-Channel Enhancement-Mode MOS FETsP-Channel Enhancement-Mode MOS FET
wtm2222a.pdf
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WTM2222ANPN Epitaxial Planar TransistorsSOT-89P b Lead(Pb)-Free121. BASEFeatures:32. COLLECTOR3. EMITTER* Low Collector Saturation Voltage* High Speed Switching* For Complementary Use With PNP Type WTM2907AABSOLUTE MAXIMUM RATINGS (TA=25C)Rating Symbol Limits UnitVCBO VCollector-Base Voltage75VCEOVCollector-Emitter Voltage 40VEBOVEmitter-Base Vo
wtm2310a.pdf
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WTM2310AN-Channel Enhancement 3 DRAINMode Power MOSFET DRAIN CURRENT5.0 AMPERESP b Lead(Pb)-FreeDRAIN SOUCE VOLTAGE160 VOLTAGEGATEFeatures:2 SOURCE* Simple Drive Requirement.* Super High Density Cell Design for Extremely Low RDS(ON).1231. GATE2. DRAIN3. SOURCESOT-89Maximum Ratings (TA=25C Unless Otherwise Specified)Rating Symbol Value UnitVDS VD
wtm2907a.pdf
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WTM2907APNP Epitaxial Planar TransistorsSOT-89P b Lead(Pb)-Free121. BASE32. COLLECTORFeatures:3. EMITTER* Low Collector Saturation Voltage* High Spwwd Switching* For Complementary Use With NPN Type WTM2222AABSOLUTE MAXIMUM RATINGS (TA=25C)Rating Symbol Limits UnitVCBO VCollector-Base Voltage-60VCEOVCollector-Emitter Voltage -60VEBOVEmitter-Base
wnm2046b.pdf
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WNM2046BWNM2046BSingle N-Channel, 20V, 0.71A, Power MOSFET Http://www.sh-willsemi.comGVDS (V) Typical Rds(on) ()S0.220@ VGS=4.5VD20 0.260@ VGS=2.5V0.315@ VGS=1.8VDFN1006-3LDescriptionsThe WNM2046B is N-Channel enhancement MOSField Effect Transistor. Uses advanced trenchDtechnology and design to provide excellent RDS (ON)with low gate charge. This device is suit
wpm2006.pdf
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WPM2006WPM2006Power MOSFET and Schottky DiodeFeatures Featuring a MOSFET and Schottky Diode Independent Pinout to each Device to Ease Circuit Design Ultra Low VF SchottkyDFN2*2 -6LApplications Li--Ion Battery Charging High Side DC-DC Conversion Circuits High Side Drive for Small Brushless DC Motors Power Management in Portable, Battery Powered Products1
wcm2079.pdf
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WCM2079WCM2079N- and P-Channel Complementary, 20V,MOSFET http://www.sh-willsemi.comV (V) Typical R ()DS DS(on)N-Channel 0.020@V =10VGS20 0.023@V =4.5VGS(4)(3)0.028@V =-10VP-Channel GS(2)-20 0.035@V =-4.5V (1)GSSOP-8LDescriptionsThe WCM2079 is the N-Channel and P-Channelenhancement MOS Field Effect Transistor as asingle package for DC-DC converter or le
wcm2007.pdf
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WCM2007 WCM2007 N- and P-Channel, 20V, MOSFET Http://www.sh-willsemi.com V(BR)DSS RDS(on) Typical. () 0.18@ 4.5V N-Channel 0.23@ 2.5V 20 V 0.30@ 1.8V ESD protection 0.45@-4.5V P-Channel 0.60@ -2.5V -20 V 0.75@ -1.8V SOT-563 ESD protection Descriptions D1 G2 S26 5 4The WCM2007 is the N- and P-Channel enhancement MOS Field Effect Transistor as a singl
wpm2014.pdf
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WPM2014WPM2014Single P-Channel, -20V, -4.9A, Power MOSFET Http//:www.sh-willsemi.comVDS (V) Rds(on) ()0.050 @ VGS=4.5V-20 0.063 @ VGS=2.5V0.074 @ VGS=1.8VDFN2x2-6LDescriptionsD DS6 5 4The WPM2014 is P-Channel enhancement MOS DField Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)Swith low gate charge. This
wnm2046c.pdf
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WNM2046C WNM2046C Single N-Channel, 20V, 0.6A, Power MOSFET Http://www.willsemi.com GV (V) Typical R () DS DS(on)SD0.42 @ V =4.5V GS 20 0.58 @ V =2.5V GS0.84 @ V =1.8V GS DFN1006-3L Descriptions DThe WPM2046C is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS(ON)with low gate char
wnm2024.pdf
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WNM2024 WNM2024 Single N-Channel, 20V, 3.9A, Power MOSFET Http://www.sh-willsemi.com VDS (V) Rds(on) ()0.027@ VGS=4.5V20 0.031@ VGS=2.5V0.036@ VGS=1.8VSOT-23 Descriptions D 3 The WNM2024 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for us
wpm2048.pdf
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WPM2048 WPM2048 Single P-Channel, -20V, -2.2A, Power MOSFET www.sh-willsemi.com VDS (V) Rds(on) (m) 96@ VGS=-4.5V -20 135@ VGS=-2.5V SOT-23 Descriptions D 3 The WPM2048 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conver
wnm2046.pdf
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WNM2046WNM2046Single N-Channel, 20V, 0.71A, Power MOSFET Http://www.sh-willsemi.com(1)(2)GVDS (V) Typical Rds(on) ()S0.220@ VGS=4.5V (3)D20 0.260@ VGS=2.5V0.315@ VGS=1.8VDFN1006-3LDescriptions(3)The WNM2046 is N-Channel enhancement MOSField Effect Transistor. Uses advanced trenchDtechnology and design to provide excellent RDS (ON)with low gate charge. Thi
wnm2072.pdf
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WNM2072WNM2072Single N-Channel, 20V, 0.71A, Power MOSFET Http://www.sh-willsemi.comGVDS (V) Typical Rds(on) ()S0.220@ VGS=4.5VD20 0.260@ VGS=2.5V0.315@ VGS=1.8VESD ProtectedDFN1006-3LDescriptionsThe WNM2072 is N-Channel enhancement MOSField Effect Transistor. Uses advanced trenchDtechnology and design to provide excellent RDS (ON)with low gate charge. This de
wpm2015.pdf
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WPM2015WPM2015Http://www.sh-willsemi.com Single P-Channel, -20V, -2.4A, Power MOSFET VDS (V) Rds(on) ( ) 0.081@ VGS= 4.5V-200.103@ VGS= 2.5VSOT-23 DescriptionsD3The WPM2015 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use 12in DC-D
wpm2087.pdf
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WPM2087 WPM2087 Single P-Channel, -20V, -4.3A, Power MOSFET Http://www.sh-willsemi.com VDS (V) Typical RDS(on) (m) 34@ V =-4.5V GS-20 39 @ V =-3.1V GS45 @ V =-2.5V GS SOT-23 Descriptions D 3 The WPM2087 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS(ON)with low gate charge. This dev
wpm2031.pdf
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WPM2031 WPM2031 Single P-Channel, -20V, -0.65A, Power MOSFET Http://www.sh-willsemi.com VDS (V) Rds(on) () 0.495@ VGS=4.5V D -20 0.665@ VGS=2.5V S0.882@ VGS=1.8V GESD Protected SOT-723 Descriptions D The WPM2031 is P-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low
wcm2002.pdf
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wnm2030.pdf
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WNM2030 WNM2030 Http://www.sh-willsemi.com Single N-Channel, 20V, 0.95A, Power MOSFET DVDS (V) Rds(on) ( ) 0.210@ VGS=4.5V S G20 0.250@ VGS=2.5V SOT-723 0.305@ VGS=1.8V ESD Protected Descriptions D3The WNM2030 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) 12with low gate ch
wpm2019.pdf
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WPM2019 WPM2019 Http://www.sh-willsemi.com Single P-Channel, -20V, -0.73A, Power MOSFET VDS (V) Rds(on) ( )D0.480@ VGS= 4.5V-20 0.620@ VGS= 2.5VS0.780@ VGS= 1.8VGSOT-523 DescriptionsThe WPM2019 is P-Channel enhancement MOS D3Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is sui
wcm2001.pdf
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WCM2001WCM2001N- and P-Channel Complementary, 20V, MOSFET Http://www.willsemi.com V(BR)DSS RDS(on) Typ. ( m )180 @ 4.5V N-Channel 225 @ 2.5V20 V 280 @ 1.8V85 @ -4.5V P-Channel 110 @ -2.5V-20 V 150 @ -1.8VD1 G2 S26 5 4DescriptionsThe WCM2001 is the N- and P-Channel enhancement MOS Field Effect Transistor as a single 1 2 3package for DC-DC converter or Lo
wpm2083.pdf
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WPM2083 WPM2083 Single P-Channel, -20V, -2.4A, Power MOSFET Http://www.sh-willsemi.com VDS (V) Typical RDS(on) (m) DDDD81 @ VGS=-4.5V -20 SSSS110 @ VGS=-2.5V GGGGSOT-23 Descriptions D 3 The WPM2083 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate char
wpm2037.pdf
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WPM2037WPM2037Single P-Channel, -20V, -3.6A , Power MOSFET Http//:www.willsemi.com VDS (V) Rds(on) ( )0.047@ VGS= 4.5V-20 0.060@ VGS= 2.5V0.076@ VGS= 1.8VSOT-23-6L DescriptionsSD DThe WPM2037 is P-Channel enhancement MOS 6 5 4Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitabl
wpm2009d.pdf
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WPM2009DWPM2009D-20V, -4A, 42m, 2.0W, DFN3x3, P-MOSFET Http://www.willsemi.com BottomDescriptions This single P-Channel MOSFET is produced using trench process that provides minimum on resistance performance. WPM2009D isenhancement power MOSFET with 2.0W power DFN3x3-8L dissipation mounting 1 in2 pad in a DFN3x3 package. This device is suited for high power charging cir
wpm2005b.pdf
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WPM2005BWPM2005BPower MOSFET and Schottky DiodeFeaturesDFN32-8L Featuring a MOSFET and Schottky Diode Independent Pinout to each Device to Ease Circuit Design Ultra Low VF SchottkyApplications Li--Ion Battery Charging High Side DC-DC Conversion Circuits High Side Drive for Small Brushless DC Motors Power Management in Portable, Battery Powered ProductsMOS
wnm2020.pdf
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WNM2020WNM2020Http://www.sh-willsemi.com N-Channel, 20V, 0.90A, Small Signal MOSFET VDS (V) Rds(on) ( )D0.220@ VGS=4.5V20 0.260@ VGS=2.5VS0.320@ VGS=1.8VGSOT-23 DescriptionsThe WNM2020 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) Dwith low gate charge. This device is suitable for
wcm2068.pdf
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WCM2068WCM2068N- and P-Channel Complementary, 20V,MOSFET Http://www. sh- willsemi.comVDS (V) Typical RDS(on) ()0.033@ VGS=4.5VN-Channel0.037@ VGS=3.3V200.041@ VGS=2.5V0.085@VGS=- 4.5VP-ChannelSOT-23-6L0.097@VGS= -3.3V-200.110@VGS= -2.5VDescriptionsThe WCM2068 is the N-Channel andP-Channel enhancement MOS Field EffectTransistor as a single package for DC-DC
wpm2341.pdf
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WPM2341WPM2341P-Channel Enhancement Mode MosfetHttp://www.sh-willsemi.com Features Higher Efficiency Extending Battery Life Miniature SOT23-3 Surface Mount Package3 Super high density cell design for extremely low RDS (ON) 12Applications DC/DC Converter Load Switch SOT 23-3 Battery Powered System LCD Display inverter Power Management in Porta
wnm2077.pdf
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WNM2077WNM2077Single N-Channel, 20V, 0.54A, Power MOSFET Http//:www.willsemi.comV (V) Rds(on) ()DS0.420@ V =4.5VGS20 0.580@ V =2.5VGSSOT-7230.840@ V =1.8VGSESD ProtectedDescriptionsD3The WNM2077 is N-Channel enhancement MOSField Effect Transistor. Uses advanced trenchtechnology and design to provide excellent RDS (ON)1 2with low gate charge. This devi
wpm2049.pdf
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WPM2049WPM2049Single P-Channel, -20V, -0.51A, Power MOSFET Http://www.sh-willsemi.comGVDS (V) Typical Rds(on) ()S0.480@ VGS=-4.5VD-20 0.620@ VGS=-2.5V0.780@ VGS=-1.8VDFN1006-3LDescriptionsThe WPM2049 is P-Channel enhancement MOSField Effect Transistor. Uses advanced trenchDtechnology and design to provide excellent RDS (ON)with low gate charge. This device is s
wpm2065.pdf
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WPM2065WPM2065Single P-Channel, -20V, -6.9A, Power MOSFET Http://www.sh-willsemi.comD D GV (V) Typical Rds(on) ()DS0.017@ V =-4.5VGSDS-200.022@ V =-2.5VGSD D S0.032@ V =-1.8VGSESD Rating: 4000V HBMDFN2X2-6LDescriptions1 6 DThe WPM2065 is P-Channel enhancement DMOS Field Effect Transistor. Uses advanced trenchD2 5 Dtechnology and design to provi
wnm2016.pdf
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WNM2016WNM2016Http://www.sh-willsemi.com N-Channel, 20V, 3.2A, Power MOSFET VDS (V) Typical RDS(on) (m) D40 @ VGS=4.5V S20 47 @ VGS=2.5V 55 @ VGS=1.8V GSOT-23 DDescriptions3The WNM2016 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable
wnm2016a.pdf
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WNM2016A WNM2016ASingle N-Channel, 20V, 4.7A, Power MOSFET Http://www.sh-willsemi.com V (V) Typical R (m) DS DS(on)33@ V =4.5V GS39@ V =3.1V GS20 44@ V =2.5V GS66@ V =1.8V GSSOT-23 Description D3The WNM2016A is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS(ON)with low gate cha
wpm2341a.pdf
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WPM2341AWPM2341AP-Channel Enhancement Mode MosfetHttp://www.sh-willsemi.com Features Higher Efficiency Extending Battery Life Miniature SOT23-3 Surface Mount Package3 Super high density cell design for extremely low RDS (ON) 12Applications DC/DC Converter Load Switch SOT 23-3 Battery Powered System LCD Display inverter Power Management in Por
wpm2081.pdf
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WPM2081 WPM2081 Single P-Channel, -20V, -3.2A, Power MOSFET Http://www.sh-willsemi.com VDS (V) Typical RDS(on) (m) DD43 @ VGS=-4.5V -20 SS55 @ VGS=-2.5V GGSOT-23 Descriptions D The WPM2081 is P-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is
wpm2026.pdf
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WPM2026 WPM2026 Single P-Channel, -20V, -3.2A, Power MOSFET Http://www.sh-willsemi.com VDS (V) Rds(on) ( ) 0.056@ VGS= 4.5V -20 0.069@ VGS= 2.5V 0.086@ VGS= 1.8V SOT-23 Descriptions D The WPM2026 is P-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitab
wnm2021.pdf
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WNM2021WNM2021Http://www.sh-willsemi.com N-Channel, 20V, 0.89A, Small Signal MOSFET VDS (V) Rds(on) ( ) 0.220@ VGS=4.5VD20 0.260@ VGS=2.5VS0.320@ VGS=1.8VGSOT-323 DescriptionsDThe WNM2021 is N-Channel enhancement MOS 3Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable
hm2907a.pdf
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Spec. No. :HE9520 HI-SINCERITY Issued Date : 1997.06.18 Revised Date : 2007.04.17 MICROELECTRONICS CORP. Page No. : 1/4 HM2907A PNP EPITAXIAL PLANAR TRANSISTOR Description The HM2907A is designed for general purpose amplifier and high speed, medium-power switching applications. SOT-89 Features Low collector saturation voltage High speed switching For co
hm2222a.pdf
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Spec. No. :HE9521 HI-SINCERITY Issued Date : 1997.06.18 Revised Date : 2008.08.04 MICROELECTRONICS CORP. Page No. : 1/5 HM2222A NPN EPITAXIAL PLANAR TRANSISTOR Description The HM2222A is designed for general purpose amplifier and high speed, medium-power switching applications. Features SOT-89 Low collector saturation voltage High speed switching For co
am2321pe.pdf
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Analog Power AM2321PEP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.079 @ VGS = -4.5V -4.1-20battery-powered product
am90n06-04m2b.pdf
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Analog Power AM90N06-04m2BN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)4.2 @ VGS = 10V Low thermal impedance 6090a4.8 @ VGS = 4.5V Fast switching speed Typical Applications: Automotive Systems DC/DC Conversion Circuits Battery Powered Power Tools ABSOLUTE MAXIMUM RATINGS
am20n10-250de.pdf
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Analog Power AM20N10-250DEN-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m) ID (A)(rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 280 @ VG = 10V 11Sconverters and power management in portable and 100355 @ VG = 4.5V
am2392n.pdf
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Analog Power AM2392NN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) ()VDS (V) ID(A) Low r trench technology DS(on)1.2 @ VGS = 10V0.9 Low thermal impedance 1501.4 @ VGS = 5.5V0.8 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU
am2320ne.pdf
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Analog Power AM2320NEN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)18 @ VGS = 4.5V7.0 Low thermal impedance 2021 @ VGS = 2.5V6.5 Fast switching speed SOT-23 Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUT
am20p10-250d.pdf
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Analog Power AM20P10-250DP-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC 295 @ VGS = -10V 11converters and power management in portable and -100battery-powered prod
am2308ne.pdf
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Analog Power AM2308NEN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)60 @ VGS = 4.5V3.5 Low thermal impedance 3082 @ VGS = 2.5V3.0 Fast switching speed Typical Applications: Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIMUM RATINGS (TA
am20p06-135d.pdf
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Analog Power AM20P06-135DP-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC 135 @ VGS = -10V 16converters and power management in portable and -60battery-powered produc
am2391p.pdf
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Analog Power AM2391PP-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) ()VDS (V) ID(A) Low r trench technology DS(on)1.2 @ VGS = -10V -0.9 Low thermal impedance -1501.3 @ VGS = -4.5V -0.8 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost c
am2341p.pdf
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Analog Power AM2341PP - Channel 40V (D-S) MOSFETThese miniature surface mount MOSFETs utilize High Cell Density process. Low PRODUCT SUMMARYrDS(on) assures minimal power loss and conserves energy, making this device ideal VDS (V) rDS(on) ()ID (A)for use in power management circuitry. 0.082 @ VGS = -10 V -3.2Typical applications are lower voltage -40application, power
am2305p.pdf
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Analog Power AM2305PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)43 @ VGS = -4.5V -4.5 Low thermal impedance -20 54 @ VGS = -2.5V -4.1 Fast switching speed 120 @ VGS = -1.8V -2.7Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Ci
am2314n.pdf
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Analog Power AM2314NN-Channel 20V (D-S) MOSFETThese miniature surface mount MOSFETsutilize High Cell Density process. Low rDS(on)PRODUCT SUMMARYassures minimal power loss and conserves VDS (V) rDS(on) ()ID (A)energy, making this device ideal for use in 0.032 @ VGS = 4.5 V 4.6power management circuitry. Typical 20applications are power switch, power 0.044 @ VGS = 2.5V
am2339p.pdf
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Analog Power AM2339PP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)57 @ VGS = -4.5V -3.9 Low thermal impedance -3089 @ VGS = -2.5V -3.2 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIM
am2313p.pdf
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Analog Power AM2313PP - Channel Logic Level MOSFETThese miniature surface mount MOSFETs PRODUCT SUMMARYutilize High Cell Density process. Low VDS (V) rDS(on) ()ID (A)rDS(on) assures minimal power loss and conserves energy, making this device ideal 10 @ VGS = -10 V -0.2-60for use in power management circuitry. 20 @ VGS = -4.5V -0.12Typical applications are voltage contro
am2325p.pdf
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Analog Power AM2325PP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to PRODUCT SUMMARYprovide low rDS(on) and to ensure minimal VDS (V) rDS(on) (OHM) ID (A)power loss and heat dissipation. Typical 0.055 @ VGS = -4.5V -3.6applications are DC-DC converters and power management in portable and -200.089 @ VGS = -2.5V
am2306n.pdf
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Analog Power AM2306NN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m()ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 58 @ VGS = 10V 3.5circuitry. Typical applications are PWMDC-DC 30converters, power management in p
am20p02-60d.pdf
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Analog Power AM20P02-60DP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARYminimal power loss and conserves energy, making VDS (V) rDS(on) m()ID (A)this device ideal for use in power management circuitry. Typical applications are PWMDC-DC 59 @ VGS = -4.5V 24-20converters, power management in
am2300n.pdf
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Analog Power AM2300NN-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs PRODUCT SUMMARYutilize High Cell Density process. Low rDS(on)assures minimal power loss and conserves VDS (V) rDS(on) ()ID (A)energy, making this device ideal for use in 0.035 @ VGS = 4.5V 4.320power management circuitry. Typical 0.050 @ VGS = 2.5V 3.5applications are DC-DC converters,
am2344n.pdf
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Analog Power AM2344NN-Channel 40-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)26 @ VGS = 10V5.8 Low thermal impedance 4035 @ VGS = 4.5V5.0 Fast switching speed SOT-23 Typical Applications: Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIMUM RATI
am2308n.pdf
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Analog Power AM2308NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)60 @ VGS = 4.5V3.8 Low thermal impedance 3082 @ VGS = 2.5V3.3 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM
am2334ne.pdf
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Analog Power AM2334NEN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)60 @ VGS = 4.5V3.5 Low thermal impedance 3082 @ VGS = 2.5V3.0 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM
am2398n.pdf
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Analog Power AM2398NN-Channel 60V (D-S) MOSFETThese miniature surface mount MOSFETsutilize High Cell Density process. Low rDS(on)PRODUCT SUMMARYassures minimal power loss and conserves VDS (V) rDS(on) ()ID (A)energy, making this device ideal for use in 0.194 @ VGS = 10 V 2.2power management circuitry. Typical 60applications are power switch, power 0.273 @ VGS = 4.5V 1
am20p15-295d.pdf
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Analog Power AM20P15-295DP-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)295 @ VGS = -10V -10.7 Low thermal impedance -150580 @ VGS = -5.5V -7.6 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOL
am2305pe.pdf
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Analog Power AM2305PEP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)43 @ VGS = -4.5V -4.5 Low thermal impedance -20 54 @ VGS = -2.5V -4.1 Fast switching speed 120 @ VGS = -1.8V -2.7Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion C
am2314ne.pdf
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Analog Power AM2314NEN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)32 @ VGS = 4.5V5.3 Low thermal impedance 2044 @ VGS = 2.5V4.5 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM
am2359pe.pdf
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Analog Power AM2359PEP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)700 @ VGS = -10V -1.2 Low thermal impedance -60800 @ VGS = -4.5V -1.1 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MA
am2303p.pdf
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Analog Power AM2303PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low VDS (V) rDS(on) (OHM) ID (A)rDS(on) and to ensure minimal power loss and heat 0.100 @ VGS = -4.5V -2.9dissipation. Typical applications are DC-DC converters and power management in portable and -20 0.160 @ VGS = -2.5V -
am2328n.pdf
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Analog Power AM2328NN-Channel 20V (D-S) MOSFETThese miniature surface mount MOSFETsutilize High Cell Density process. Low rDS(on)PRODUCT SUMMARYassures minimal power loss and conserves VDS (V) rDS(on) ()ID (A)energy, making this device ideal for use in 0.025 @ VGS = 4.5 V 5.9power management circuitry. Typical 20applications are power switch, power 0.035 @ VGS = 2.5V
am2340n.pdf
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Analog Power AM2340NN-Channel 40-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)43 @ VGS = 10V5.2 Low thermal impedance 4064 @ VGS = 4.5V3.7 Fast switching speed Typical Applications: SOT-23 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE
am20p15-160d.pdf
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Analog Power AM20P15-160DP-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)160 @ VGS = -10V -15 Low thermal impedance -150173 @ VGS = -5.5V -14 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUT
am20n10-350d.pdf
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Analog Power AM20N10-350DN-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)420 @ VGS = 10V9.0 Low thermal impedance 100460 @ VGS = 5.5V8.6 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE
am2345p.pdf
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Analog Power AM2345PP - Channel 40V (D-S) MOSFETThese miniature surface mount MOSFETsutilize a high cell density trench process to PRODUCT SUMMARYprovide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical VDS (V) rDS(on) (O) ID (A)applications are DC-DC converters and 0.164 @ V = -10 V -3.2GSpower management in portable and -40battery-powered pr
am2342n.pdf
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Analog Power AM2342NN-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m(O) ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 86 @ V = 10V 5.2GSconverters and power management in portable and 40battery-powered products s
am2343p.pdf
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Analog Power AM2343PP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)57 @ VGS = -10V -3.9 Low thermal impedance -3089 @ VGS = -4.5V -3.2 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU
am2358n.pdf
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Analog Power AM2358NN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)92 @ VGS = 10V3.1 Low thermal impedance 60107 @ VGS = 4.5V2.9 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM
am20p03-60d.pdf
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Analog Power AM20P03-60DP-Channel 32-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 59 @ VGS = -10V 24-32battery-powered products s
am2307pe.pdf
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Analog Power AM2307PEP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYrDS(on) (m)VDS (V) ID(A)31 @ VGS = -4.5V -5.2Key Features: 44 @ VGS = -2.5V -4.4 Low r trench technology DS(on)-2056 @ VGS = -1.8V -3.9 Low thermal impedance 83 @ VGS = -1.5V -3.2 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Indust
am2394ne.pdf
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Analog Power AM2394NEN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)1200 @ VGS = 10V0.9 Low thermal impedance 1501300 @ VGS = 4.5V0.8 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MA
am2328ne.pdf
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Analog Power AM2328NEN-Channel 20V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.022 @ VGS = 4.5 V 6.5battery-powered products su
am20n10-115d.pdf
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Analog Power AM20N10-115DN-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)115 @ VGS = 10V17 Low thermal impedance 100135 @ VGS = 4.5V16 Fast switching speed Typical Applications: LED Inverter Circuits DC/DC Conversion Circuits Motor drives ABSOLUTE MAXIMUM RATINGS (TA = 2
am2302ne.pdf
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Analog Power AM2302NEN-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to PRODUCT SUMMARYprovide low rDS(on) and to ensure minimal VDS (V) rDS(on) () ID (A)power loss and heat dissipation. Typical applications are DC-DC converters and 0.076 @ VGS = 4.5V 3.420power management in portable and 0.103 @ VGS = 2.5V 2
am20n15-250b.pdf
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Analog Power AM20N15-250BN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)200 @ VGS = 10V Low thermal impedance 15021a225 @ VGS = 5.5V Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIM
am2343pe.pdf
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Analog Power AM2343PEP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)57 @ VGS = -10V -3.9 Low thermal impedance -3089 @ VGS = -4.5V -3.2 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI
am2301p.pdf
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Analog Power AM2301PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)130 @ VGS = -4.5V -2.6 Low thermal impedance -20190 @ VGS = -2.5V -2.2 Fast switching speed SOT-23 Typical Applications: Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLE
am2371p.pdf
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Analog Power AM2371PP-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features:rDS(on) ()VDS (V) ID(A) Low r trench technologyDS(on)1.2 @ VGS = -10V -1 Low thermal impedance-1001.3 @ VGS = -4.5V -0.9 Fast switching speedTypical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost converters
am2390n.pdf
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Analog Power AM2390NN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) ()VDS (V) ID(A) Low r trench technology DS(on)0.7 @ VGS = 10V1.1 Low thermal impedance 1501.2 @ VGS = 4.5V0.8 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost conv
am2301pe.pdf
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Analog Power AM2301PEP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.130 @ VGS = -4.5V -2.6-20battery-powered product
am2334n.pdf
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Analog Power AM2334NN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 60 @ VGS = 4.5V 3.5converters and power management in portable and 30battery-powered products s
am20n15-250d.pdf
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Analog Power AM20N15-250DN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)255 @ VGS = 10V12 Low thermal impedance 150290 @ VGS = 4.5V11 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost
am2330ne.pdf
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Analog Power AM2330NEN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC 32 @ VGS = 10V 5.2converters and power management in portable and 30battery-powered products suc
am20n06-90i.pdf
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Analog Power AM20N06-90IN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)94 @ VGS = 10V19 Low thermal impedance 60109 @ VGS = 4.5V18 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU
am2345pe.pdf
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Analog Power AM2345PEP - Channel 40V (D-S) MOSFETThese miniature surface mount MOSFETsutilize a high cell density trench process to PRODUCT SUMMARYprovide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical VDS (V) rDS(on) ()ID (A)applications are DC-DC converters and 0.164 @ VGS = -10 V -3.2power management in portable and -40battery-powered pr
am20n06-90d.pdf
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Analog Power AM20N06-90DN-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m() ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 94 @ VGS = 10V 19circuitry. Typical applications are PWMDC-DC 60109 @ VGS = 4.5V 18converters
am2310n.pdf
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Analog Power AM2310NN-Channel Logic Level MOSFETThese miniature surface mount MOSFETs PRODUCT SUMMARYutilize High Cell Density process. Low rDS(on) assures minimal power loss and VDS (V) rDS(on) ()ID (A)conserves energy, making this device ideal 0.065 @ VGS = 4.5V 2.2for use in power management circuitry. 300.082 @ VGS = 2.5V 2.0Typical applications are lower voltage
am20n20-125d.pdf
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Analog Power AM20N20-125DN-Channel 200-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 260 @ VGS = 10V 12converters and power management in portable and 200300 @ VGS = 5.5V 11
am2360n.pdf
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Analog Power AM2360NN-Channel 55V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) () ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.160 @ VGS = 4.5 V 2.4battery-powered products su
am20p06-175i.pdf
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Analog Power AM20P06-175IP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)175 @ VGS = -10V -14 Low thermal impedance -60200 @ VGS = -4.5V -13 Fast switching speed Typical Applications: TO-251 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits
am2336n.pdf
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Analog Power AM2336NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)32 @ VGS = 4.5V5.3 Low thermal impedance 3064 @ VGS = 2.5V3.7 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM
am2337p.pdf
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Analog Power AM2337PP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)112 @ VGS = -4.5V -2.8 Low thermal impedance -30172 @ VGS = -2.5V -2.3 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAX
am2359p.pdf
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Analog Power AM2359PP-Channel -60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)381 @ VGS = -10V -1.6 Low thermal impedance -60561 @ VGS = -4.5V -1.3 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAX
am20n10-250d.pdf
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Analog Power AM20N10-250DN-Channel 100-V (D-S) MOSFET PRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)280 @ VGS = 10V11 Low thermal impedance 100355 @ VGS = 4.5V10 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost
am2304n.pdf
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Analog Power AM2304NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)12 @ VGS = 10V8.5 Low thermal impedance 3018 @ VGS = 4.5V7.0 Fast switching speed Typical Applications: Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIMUM RATINGS (TA =
am2374n.pdf
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Analog Power AM2374NN-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)92 @ VGS = 10V3.1 Low thermal impedance 10099 @ VGS = 4.5V3.0 Fast switching speed Typical Applications: SOT-23 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE
am25p03-60d.pdf
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Analog Power AM25P03-60DP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARYminimal power loss and conserves energy, making VDS (V) rDS(on) m()ID (A)this device ideal for use in power management circuitry. Typical applications are PWMDC-DC 59 @ VGS = -4.5V 24-26.5converters, power management
am20p02-99d.pdf
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Analog Power AM20P02-99DP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARYminimal power loss and conserves energy, making VDS (V) rDS(on) (m)ID (A)this device ideal for use in power management circuitry. Typical applications are PWMDC-DC 118 @ VGS = -4.5V 17-20converters, power management i
am2324n.pdf
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Analog Power AM2324NN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYThese miniature surface mount MOSFETs utilize a high cell density trench process to VDS (V) rDS(on) () ID (A)provide low rDS(on) and to ensure minimal 0.047 @ VGS = 4.5V 4.3power loss and heat dissipation. Typical 200.055@ VGS = 2.5V 4.0applications are DC-DC converters and power management in portable and
am2361p.pdf
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Analog Power AM2361PP-Channel -60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)210 @ VGS = -10V -3.4 Low thermal impedance -60250 @ VGS = -4.5V -2.8 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAX
am2362n.pdf
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Analog Power AM2362NN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)27 @ VGS = 10V5.7 Low thermal impedance 6033 @ VGS = 4.5V5.2 Fast switching speed Typical Applications: SOT-23 DC/DC Conversion Circuits Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTHERWISE NOTED)
am2319p.pdf
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Analog Power AM2319PP - Channel Logic Level MOSFETThese miniature surface mount MOSFETs utilize High Cell Density process. Low PRODUCT SUMMARYrDS(on) assures minimal power loss and VDS (V) rDS(on) ()ID (A)conserves energy, making this device ideal for use in power management circuitry. 0.20 @ VGS = -10 V -2.1-30Typical applications are voltage control 0.30 @ VGS = -4.
am2318n.pdf
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Analog Power AM2318NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)160 @ VGS = 10V2.4 Low thermal impedance 30250 @ VGS = 4.5V1.9 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU
am2381p.pdf
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Analog Power AM2381PP-Channel 80-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)800 @ VGS = -10V -1.1 Low thermal impedance -80900 @ VGS = -4.5V -1.0 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI
am2327p.pdf
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Analog Power AM2327PP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) (OHM) ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 0.052 @ VGS = -4.5V -3.6circuitry. Typical applications are DC-DC converters, power management in po
am2370n.pdf
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Analog Power AM2370NN-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)280 @ VGS = 10V1.5 Low thermal impedance 100355 @ VGS = 4.5V1.3 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost con
am2398ne.pdf
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Analog Power AM2398NEN-Channel 60V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.194 @ VGS = 10 V 2.2battery-powered products suc
am2373p.pdf
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Analog Power AM2373PP-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) ()VDS (V) ID (A) Low r trench technology DS(on)6 @ VGS = -10V -0.39 Low thermal impedance -1006.5 @ VGS = -4.5V -0.37 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost
am20n10-130d.pdf
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Analog Power AM20N10-130DN-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 130 @ VGS = 10V 17converters and power management in portable and 100160 @ VGS = 4.5V 15
am2329p.pdf
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Analog Power AM2329PP-Channel 30V (D-S) MOSFETThese miniature surface mount MOSFETsutilize High Cell Density process. Low rDS(on)PRODUCT SUMMARYassures minimal power loss and conserves VDS (V) rDS(on) ()ID (A)energy, making this device ideal for use in 0.112 @ VGS = 10 V 2.5power management circuitry. Typical -30applications are power switch, power 0.172 @ VGS = 4.5V
am20p03-60i.pdf
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Analog Power AM20P03-60IP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARYminimal power loss and conserves energy, making VDS (V) rDS(on) m()ID (A)this device ideal for use in power management circuitry. Typical applications are PWMDC-DC 59 @ VGS = -10V 24-30converters, power management in
am2302n.pdf
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Analog Power AM2302NN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)76 @ VGS = 4.5V3.4 Low thermal impedance 20103 @ VGS = 2.5V3.0 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM
am2323p.pdf
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Analog Power AM2323PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low VDS (V) rDS(on) (OHM) ID (A)rDS(on) and to ensure minimal power loss and heat 0.100 @ VGS = -4.5V -2.9dissipation. Typical applications are DC-DC converters and power management in portable and -20 0.160 @ VGS = -2.5V -
am2322n.pdf
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Analog Power AM2322NN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC VDS (V) rDS(on) ()ID (A)converters and power management in portable and 0.085 @ VGS = 10V 2.5battery-powered products such
am2326n.pdf
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Analog Power AM2326NN-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETsPRODUCT SUMMARYutilize High Cell Density process. Low VDS (V) rDS(on) ()ID (A)rDS(on) assures minimal power loss and 0.070 @ VGS = 4.5V 2.2conserves energy, making this device ideal for use in power management circuitry. 200.080@ VGS = 2.5V 2.0Typical applications are DC-DC 0.120@ VG
am2347p.pdf
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Analog Power AM2347PP-Channel 40-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)39 @ VGS = -10V -4.8 Low thermal impedance -4055 @ VGS = -4.5V -4.0 Fast switching speed SOT-23 Typical Applications: Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS
am20p04-60d.pdf
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Analog Power AM20P04-60DP-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC 69 @ VGS = -10V 22converters and power management in portable and -40battery-powered products
am2317p.pdf
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Analog Power AM2317PP - Channel Logic Level MOSFETThese miniature surface mount MOSFETs PRODUCT SUMMARYutilize a high cell density trench process to VDS (V) rDS(on) () ID (A)provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical 0.30 @ VGS = -10 V -1.0-30applications are DC-DC converters and 0.50 @ VGS = -4.5V -0.9power management in portable
am2372n.pdf
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Analog Power AM2372NN-Channel 100V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) () ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 2 @ VGS = 10 V 0.7battery-powered products such a
am2340ne.pdf
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Analog Power AM2340NEN-Channel 40-V (D-S) MOSFETPRODUCT SUMMARYThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat 43 @ VGS = 10V 5.2dissipation. Typical applications are DC-DC converters and power management in portable and 40 50 @ VGS = 4.5V 4.2batter
am2342ne.pdf
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Analog Power AM2342NEN-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 86 @ VGS = 10V 5.2converters and power management in portable and 40battery-powered products s
am2330n.pdf
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Analog Power AM2330NN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m() ID (A)dissipation. Typical applications are DC-DC 32 @ VGS = 10V 5.2converters and power management in portable and 30battery-powered products suc
am2321p.pdf
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Analog Power AM2321PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)79 @ VGS = -4.5V -4.1 Low thermal impedance -20110 @ VGS = -2.5V -3.3 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI
am2358ne.pdf
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Analog Power AM2358NEN-Channel 60V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.092 @ VGS = 10 V 3.1battery-powered products suc
am2332n.pdf
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Analog Power AM2332NN-Channel 20V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.058 @ VGS = 4.5 V 4.7battery-powered products suc
am2306ne.pdf
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Analog Power AM2306NEN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m()ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 58 @ VGS = 10V 3.5circuitry. Typical applications are PWMDC-DC 30converters, power management in
am20n10-180d.pdf
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Analog Power AM20N10-180DN-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)180 @ VGS = 10V14 Low thermal impedance 100190 @ VGS = 4.5V13 Fast switching speed Typical Applications: LED Inverter Circuits DC/DC Conversion Circuits Motor drives ABSOLUTE MAXIMUM RATINGS (TA = 2
am2312n.pdf
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Analog Power AM2312NN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)10 @ VGS = 4.5V9.4 Low thermal impedance 2013 @ VGS = 2.5V8.2 Fast switching speed Typical Applications: SOT-23 Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIMUM RATIN
apm2317.pdf
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Shenzhen Tuofeng Semiconductor Technology Co., LtdAPM2317 P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-4.5A ,RDS(ON)=28m (typ.) @ VGS=-4.5VRDS(ON)=38m (typ.) @ VGS=-2.5V RDS(ON)=55m (typ.) @ VGS=-1.8V Super High Dense Cell Design Reliable and RuggedS Lead Free and Green Devices Available(RoHS Compliant)Applications G Power Management
apm2510nu.pdf
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APM2510NUN-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/50A,RDS(ON)=8.5m (typ.) @ VGS=10VG DRDS(ON)=15m (typ.) @ VGS=4.5VS Super High Dense Cell Design Avalanche Rated Top View of TO-252 Reliable and RuggedD Lead Free and Green Devices Available (RoHS Compliant)ApplicationsG Power Management in Desktop Computer orDC/DC ConvertersSN-Ch
apm2054n.pdf
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APM2054N N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/12A, RDS(ON)=35m(typ.) @ VGS=10VRDS(ON)=45m(typ.) @ VGS=4.5VRDS(ON)=110m(typ.) @ VGS=2.5V1 2 31 2 3 Super High Dense Cell Design High Power and Current Handling Capability G D SG D S TO-252, SOT-89 and SOT-223 Packages To
apm2556nu.pdf
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APM2556NUN-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/60A,RDS(ON)=4.5m (typ.) @ VGS=10VG DRDS(ON)=7.5m (typ.) @ VGS=4.5V Super High Dense Cell DesignS Reliable and Rugged Top View of TO-252 Lead Free and Green Devices AvailableD (RoHS Compliant)ApplicationsG Power Management in Desktop Computer orDC/DC ConvertersSN-Channel MOSFET
apm2509nu.pdf
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APM2509NUN-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/50A , RDS(ON)=7.5m(typ.) @ VGS=10V RDS(ON)=13m(typ.) @ VGS=4.5V Super High Dense Cell Design Avalanche Rated Top View of TO-252 Reliable and RuggedD Lead Free Available (RoHS Compliant)ApplicationsG Power Management in Desktop Computer or DC/DC ConvertersSN-Channel MOSFETOrderi
apm2014n.pdf
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APM2014NN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/30A , RDS(ON)=12m(typ.) @ VGS=4.5V RDS(ON)=18m(typ.) @ VGS=2.5V Super High Dense Cell Design for ExtremelyLow RDS(ON)1 2 3 Reliable and Rugged TO-252 PackageG D S Top View of TO-252Applications Power Management in Comput
apm2071pd.pdf
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APM2071PD P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-4A, RDS(ON)=50m(typ.) @ VGS=-4.5VG RDS(ON)=75m(typ.) @ VGS=-2.5VDS Super High Dense Cell Design Top View of SOT-89 Reliable and Rugged (2) Lead Free and Green Devices AvailableD (RoHS Compliant)Applications(1)G DC/DC ConvertersS(3)P-Channel MOSFETOrdering and Marki
apm2318a.pdf
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APM2318AN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/3A ,DRDS(ON)=35m(typ.) @ VGS=10VRDS(ON)=40m(typ.) @ VGS=4.5VGRDS(ON)=60m(typ.) @ VGS=2.5VS Super High Dense Cell Design Top View of SOT-23 Reliable and Rugged Lead Free Available (RoHS Compliant)DApplicationsG Power Management in
apm2030.pdf
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APM2030NN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A , RDS(ON)=35m(typ.) @ VGS=4.5VRDS(ON)=38m(typ.) @ VGS=2.5V Super High Dense Cell Design for ExtremelyLow RDS(ON)1 2 3 Reliable and Rugged TO-252 PackageG D S Top View of TO-252Applications Power Management in Computer
apm2513nu.pdf
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APM2513NUN-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/40A,RDS(ON)=10.5m (typ.) @ VGS=10VG DRDS(ON)=16m (typ.) @ VGS=4.5V Super High Dense Cell Design S Avalanche Rated Top View of TO-252 Reliable and RuggedD Lead Free and Green Devices Available(RoHS Compliant)GApplications Power Management in Desktop Computer orSDC/DC ConvertersN-Cha
xm2n200.pdf
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GOFORDXM2N200.DDescription The XM2N200.uses advanced trench technology and Gdesign to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features SSchematic diagram VDSS RDS(ON) ID @10V (typ) 190V 356.6m 2A High density cell design for ultra low Rdson Fully characterized avalanche voltage an
stm201n.pdf
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GreenProductSTM201NaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) TypVDSS IDRugged and reliable.110 @ VGS=10VSuface Mount Package.100V 4A170 @ VGS=4.5VS O-81C(TA=25 unless otherwise noted)ABSOLUTE MAXIMUM RATINGSSym
ssfm2506.pdf
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SSFM2506 Main Product Characteristics: VDSS 25V RDS(on) 4.1mohm(typ.) ID 60A Sch emati c di ag ram TO-252 (D-PAK) Mar ki ng a nd pin Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and revers
m28s sot-23.pdf
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ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors M28S TRANSISTOR (NPN) FEATURES Power dissipation Pcm:0.625WTamb=25 MARKING:28S MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units
m28m.pdf
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M28M(BR3DG28M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features High IC,, high hFE. / Applications Use in audio output driver stage amplifier applications. /
nsgm200gb120b.pdf
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SEMICONDUCTOR5. Small temperature dependence of the turn-off switching loss48.525 25C2E1 E2 C13-M693+0.3 4- 6.5108+0.514 14 14 2.84-0.5All dimensions in millimeters271517.848+0.362.5+0.5G1 E1E2 G230.930.522.5SEMICONDUCTORSEMICONDUCTORSEMICONDUCTORSEMICONDUCTORSEMICONDUCTOR
hm28s.pdf
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NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HM28S APPLICATIONS General Purpose And Switching Applications. ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150 TjJunction Temperature150 PCCollector Dissip ation
sm2607csc.pdf
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SM2607CSC Dual Enhancement Mode MOSFET (N- and P-Channel)Features Pin Description N-Channel 20V/5A,D2 RDS(ON)=38m(max.) @ VGS=4.5VS1D1G2 RDS(ON)=54m(max.) @ VGS=2.5VS2G1 RDS(ON)=85m(max.) @ VGS=1.8V P-ChannelTop View of SOT-23-6 -20V/-3.3A, RDS(ON)=85m(max.) @ VGS=-4.5V(4)D2(6)D1RDS(ON)=120m(max.) @ VGS=-2.5VRDS(ON)=210m(max.)
sm2217psqg.pdf
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SM2217PSQGP-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-9.9A,SDRDS(ON) = 17m(max.) @ VGS =-4.5V DDRDS(ON) = 25m(max.) @ VGS =-2.5VRDS(ON) = 40m(max.) @ VGS =-1.8V GSPin 1DD Reliable and RuggedDFN2x2-6 Lead Free and Green Devices Available(RoHS Compliant)(1,2,5,6)DDDD HBM ESD protection level pass 2KVNote : The diode connec
sm2014nsu.pdf
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SM2014NSUN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/13.8A,DRDS(ON)= 19.5m (max.) @ VGS=4.5VSRDS(ON)= 27m (max.) @ VGS=2.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-3(RoHS Compliant) ESD Protection. D (2)ApplicationsG (1) Power Management in Notebook Computer,Portable Equipment and Battery PoweredSyste
sm2518nsuc.pdf
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SM2518NSUCN-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/50A,RDS(ON)=9.5m (max.) @ VGS=10VRDS(ON)=14.5m (max.) @ VGS=4.5VSD Reliable and Rugged G Avalanche Rated Lead Free and Green Devices AvailableTop View of TO-251S(RoHS Compliant)D 100% UIS + Rg TestedGApplications Power Management in Desktop Computer or DC/DC Converters.SN-Channel
sm2337psa.pdf
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SM2337PSAP-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-5.5A,RDS(ON) = 34m (max.) @ VGS =-4.5VDRDS(ON) = 50m (max.) @ VGS =-2.5VSRDS(ON) = 75m (max.) @ VGS =-1.8VG Reliable and RuggedTop View of SOT-23-3 Lead Free and Green Devices Available(RoHS Compliant) HBM ESD protection level pass 2KV DNote : The diode connected between the gate andsour
sm2690nsc.pdf
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SM2690NSCN-Channel Enhancement Mode MOSFETFeatures Pin Description 150V/1.6A,SDRDS(ON)= 360m(max.) @ VGS=10VDG Reliable and RuggedDD Lead Free and Green Devices Available(RoHS Compliant)Top View of SOT-23-6 ESD Protection(1,2,5,6)DDDDApplications(3)G For POE Power Primary Side Switch for LowPower DC/DC Converters.(4)SN-Channel MOSFETOrderin
sm2603psc.pdf
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SM2603PSCP-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-4.3A,SRDS(ON)= 48m (max.) @ VGS=-4.5VDDRDS(ON)= 68m (max.) @ VGS=-2.5VGDRDS(ON)= 100m (max.) @ VGS=-1.8VD Reliable and RuggedTop View of SOT-23-6 Lead Free and Green Devices Available(RoHS Compliant)(1,2,5,6)DD DDApplications Power Management in Notebook Computer,Portable Equip
sm2a18dsk.pdf
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SM2A18DSK Dual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1D1D2 200V/0.9A,D2RDS(ON)= 1140m(max.) @ VGS= 10V RDS(ON)= 1300m(max.) @ VGS= 4.5VS1G1 ESD protectedS2G2 100% UIS + Rg TestedTop View of SOP-8 Reliable and Rugged Lead Free and Green Devices AvailableD1 D1 D2 D2 (RoHS Compliant)ApplicationsG1 G2 Power Management in D
sm2421psan.pdf
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SM2421PSAN P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD -30V/-4.8A,RDS(ON)= 56m (Max.) @ VGS=-10V SRDS(ON)= 68m (Max.) @ VGS=-4.5VG RDS(ON)= 94m (Max.) @ VGS=-2.5V Super High Dense Cell DesignTop View of SOT-23N Reliable and RuggedS Lead Free and Green Devices Available(RoHS Compliant)ApplicationsG Power Management in Notebook Comp
apm2304a.pdf
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APM2304A N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/5A,D RDS(ON)= 22m(typ.) @ VGS= 10VS RDS(ON)= 32m(typ.) @ VGS= 4.5VG Super High Dense Cell Design Top View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices AvailableD (RoHS Compliant)ApplicationsG Power Management in Notebook Computer,Portable Equipment and Battery Power
sm2306nsa.pdf
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SM2306NSA N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/4.7A,D RDS(ON)=40m (max.) @ VGS=10VS RDS(ON)=60m (max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-3(RoHS Compliant)DApplicationsG Power Management in Notebook Computer,Portable Equipment and Battery Powered Systems.S Load SwitchN-Chann
sm2f04nsu.pdf
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SM2F04NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 250V/10A,DRDS(ON)= 300m (Max.) @ VGS=10VS Reliable and RuggedG Lead Free and Green Devices Available(RoHS Compliant) Top View of TO-252-3DApplicationsG Power Management in TV Inverter.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM2F04NS U : TO-252-3Assembly
sm2202nsqe.pdf
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SM2202NSQEN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 30V/8.4A,DDRDS(ON) = 15.5m(max.) @ VGS =10VRDS(ON) = 21m(max.) @ VGS =4.5V GSD Pin 1D Avalanche RatedTDFN2x2-6 Reliable and Rugged Lead Free and Green Devices Available(1,2,5,6)DD DD(RoHS Compliant) 100% UIS TestedApplications(3)G Power Management in Notebook Computer,
sm2326nsan.pdf
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SM2326NSANN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/3A,DRDS(ON)= 70m(max.) @ VGS= 4.5VSRDS(ON)= 90m(max.) @ VGS= 2.5VGRDS(ON)= 110m(max.) @ VGS= 1.8VTop View of SOT-23N Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in DC/AC Inverter SystemsS DC-DC Converter
sm2f05nsu.pdf
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SM2F05NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 250V/7.4A,DRDS(ON)= 390m (Max.) @ VGS=10VS 100% UIS + Rg TestedG Reliable and RuggedTop View of TO-252-2 Lead Free and Green Devices Available(RoHS Compliant)DApplicationsG Power Management in TV Inverter.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM2F05NS U : TO
sm2319psan.pdf
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SM2319PSANP-Channel Enhancement Mode MOSFETFeatures Pin Description -40V/-3A,DRDS(ON)= 80m(max.) @ VGS= -10VSRDS(ON)= 120m(max.) @ VGS= -4.5VG Reliable and RuggedTop View of SOT-23N Lead Free and Green Devices Available(RoHS Compliant)DApplicationsG Load Switch. DC/DC Converter.SP-Channel MOSFETOrdering and Marking InformationPackage
sm2207psqg.pdf
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SM2207PSQGP-Channel Enhancement Mode MOSFETFeatures Pin Description -12V/-8.7A,SDDDRDS(ON) = 22m(max.) @ VGS =-4.5VRDS(ON) = 30m(max.) @ VGS =-2.5VG SPin 1RDS(ON) = 38m(max.) @ VGS =-1.8VDDRDS(ON) = 57m(max.) @ VGS =-1.5VDFN2x2-6 Reliable and Rugged(1,2,5,6) Lead Free and Green Devices AvailableDD DD(RoHS Compliant)Applications(3)G
sm2327psa.pdf
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SM2327PSAP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-4A, DRDS(ON)=56m (max.) @ VGS=-10VSRDS(ON)=70m (max.) @ VGS=-4.5VGRDS(ON)=100m (max.) @ VGS=-2.5VTop View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in LCD TV, Monitor,SNotebook Computer, Portable Equipment and
sm2317psa.pdf
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SM2317PSA P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-4.6A , DRDS(ON)= 48m (Max.) @ VGS=-4.5VSRDS(ON)= 70m (Max.) @ VGS=-2.5VGRDS(ON)=110m (Max.) @ VGS=-1.8VTop View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices Available(RoHS Compliant)DApplicationsG Power Management in Notebook Computer,Portable Equipment and Battery Powe
sm2a06nsfp.pdf
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SM2A06NSFP N-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/15A,RDS(ON)=140m (max.) @ VGS=10V Reliable and RuggedSDG Lead Free and Green Devices Available(RoHS Compliant)Top View of TO-220FPDApplications High Current Switching.G Uninterruptible Power Supply. Inverter Systems. Display & Lighting Equipment.SN-Channel MOSFETOrdering and Mar
sm2210nsqg.pdf
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SM2210NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 12V/12A,DDRDS(ON) = 4.3m (max.) @ VGS =4.5VRDS(ON) = 5.6m (max.) @ VGS =2.5VG SPin 1DD 100% UIS + Rg TestedDFN2x2A-6_EP Reliable and Rugged Lead Free and Green Devices Available(1,2,5,6)DDDD (RoHS Compliant)Applications(3)G Battery Management Application. Power Management Fu
sm2602nsc.pdf
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SM2602NSCN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6.2A,SDRDS(ON)= 24m (max.) @ VGS=4.5VDGRDS(ON)= 32m (max.) @ VGS=2.5VDD Reliable and RuggedTop View of SOT-23-6 Lead Free and Green Devices Available(RoHS Compliant)(1,2,5,6)DD DDApplications(3)G Power Management in Notebook Computer,Portable Equipment and Battery PoweredSystem
apm2558nu.pdf
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APM2558NU N-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/60A,DRDS(ON)=4.5m (Typ.) @ VGS=10VSRDS(ON)=7.5m (Typ.) @ VGS=4.5VG Reliable and Rugged Avalanche RatedTop View of TO-252-3 Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrdering and Mar
sm2329psa.pdf
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SM2329PSA P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-3.3A, DRDS(ON)= 85m (Max.) @ VGS=-4.5VSRDS(ON)= 120m (Max.) @ VGS=-2.5VGRDS(ON)= 210m (Max.) @ VGS=-1.8VTop View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in Notebook Computer,Portable Equipment and Battery Powe
sm2403psan.pdf
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SM2403PSAN P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD -20V/-3.3A,SRDS(ON)= 90m (Max.) @ VGS=-4.5VGRDS(ON)= 135m (Max.) @ VGS=-2.5VRDS(ON)= 240m (Max.) @ VGS=-1.8VTop View of SOT-23N Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Load switch. For Portable Equipment.S For Networking application.P
sm2030nsu.pdf
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SM2030NSU N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDrain 4 20V/30A, RDS(ON)= 20.5m (Max.) @ VGS=4.5V3 Source2 RDS(ON)= 29m (Max.) @ VGS=2.5V1 Gate Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252(RoHS Compliant)DApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrdering
sm2558nsuc.pdf
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SM2558NSUCN-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/60A,RDS(ON)=5.2m (max.) @ VGS=10VSRDS(ON)=9.5m (max.) @ VGS=4.5VDG Reliable and Rugged Avalanche RatedTop View of TO-251 Lead Free and Green Devices Available(RoHS Compliant)DApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrdering and Mar
sm2a12nsu.pdf
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SM2A12NSUN-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/25A,D RDS(ON)= 70m(max.) @ VGS= 10VS 100% UIS + Rg TestedG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-2 (RoHS Compliant)DGApplications Power Management in TV Converter.S DC-DC Converter.N-Channel MOSFETOrdering and Marking InformationPackage C
apm2317a.pdf
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APM2317A P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-4.5A ,DRDS(ON)=28m (typ.) @ VGS=-4.5VSRDS(ON)=38m (typ.) @ VGS=-2.5VG RDS(ON)=55m (typ.) @ VGS=-1.8VTop View of SOT-23-3 Super High Dense Cell Design Reliable and RuggedS Lead Free and Green Devices Available(RoHS Compliant)Applications G Power Management in Notebook Com
sm2201nsqg.pdf
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SM2201NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 30V/10.2A,DDRDS(ON) = 10.5m(max.) @ VGS =10VRDS(ON) = 14m(max.) @ VGS =4.5VGSDPin 1D Reliable and RuggedDFN2x2-6 Lead Free and Green Devices Available (RoHS Compliant)(1,2,5,6)DD DD 100% UIS TestedApplications(3)G Power Management in Notebook Computer,(4)SPortable
sm2a16nsf sm2a16nsfp.pdf
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SM2A16NSF/SM2A16NSFP N-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/15A,RDS(ON)=156m (max.) @ VGS=10V Reliable and RuggedS S Lead Free and Green Devices AvailableD DG G(RoHS Compliant)Top View of TO-220FPTop View of TO-220 100% UIS + Rg TestedDApplications Power Management in TV Inverter.GSN-Channel MOSFETOrdering and Marking Infor
sm2321psa.pdf
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SM2321PSA P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-4.3A , DRDS(ON)= 56m (Max.) @ VGS=-10VSRDS(ON)= 68m (Max.) @ VGS=-4.5VG RDS(ON)= 94m (Max.) @ VGS=-2.5VTop View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in Notebook Computer,Portable Equipment and Battery Powe
sm2204nsqg.pdf
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SM2204NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 30V/7A,DDRDS(ON) = 23m(max.) @ VGS =10VRDS(ON) = 31.5m(max.) @ VGS =4.5VGSD Pin 1D Avalanche RatedDFN2x2-6 Reliable and Rugged Lead Free and Green Devices Available(1,2,5,6)DDDD(RoHS Compliant) 100% UIS TestedApplications(3)G Load Switch HDD (4)S DC/DC ConverterN
sm2610nsc.pdf
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SM2610NSCN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/6.6A,SDRDS(ON)= 21m(max.) @ VGS=10VDGRDS(ON)= 27m(max.) @ VGS=4.5VDD Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-6(RoHS Compliant)(1,2,5,6)DD DDApplications Power Management in Notebook Computer,(3)GPortable Equipment and Battery PoweredSys
sm2612nsc.pdf
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SM2612NSCN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/5.5A,SDRDS(ON)= 26.5m(max.) @ VGS=10VDGRDS(ON)= 35m(max.) @ VGS=4.5VDD Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-6(RoHS Compliant)(1,2,5,6)DDDDApplications Power Management in Notebook Computer,(3)GPortable Equipment and Battery PoweredSy
sm2302nsa.pdf
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SM2302NSAN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A,DRDS(ON)= 26m (max.) @ VGS=4.5VSRDS(ON)= 37m (max.) @ VGS=2.5VG ESD Protected Reliable and RuggedTop View of SOT-23-3 Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in Notebook Computer,Portable Equipment and Battery PoweredSSystems.N-Chan
sm2601psc.pdf
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SM2601PSC P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-7.3A ,SDRDS(ON)=26m (Max.) @ VGS=-4.5VDGDRDS(ON)=38m (Max.) @ VGS=-2.5VDRDS(ON)=58m (Max.) @ VGS=-1.8VTop View of SOT-23-6 Reliable and Rugged Lead Free and Green Devices Available(1,2,5,6)(RoHS Compliant)DD DDApplications(3)G Power Management in Notebook Computer,
sm2225nsqg.pdf
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SM2225NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 100V/2.7A,DD RDS(ON)= 156m (max.) @ VGS=10V RDS(ON)= 176m (max.) @ VGS=4.5VGSDPin 1D ESD ProtectionDFN2x2A-6_EP 100% UIS + Rg Tested Reliable and Rugged(1,2,5,6)DDDD Lead Free and Green Devices Available(RoHS Compliant)Applications(3)G For POE Power Primary Side Switch for
sm2a06nsu.pdf
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SM2A06NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/18A,DRDS(ON)=140m (max.) @ VGS=10VS Reliable and RuggedG Lead Free and Green Devices Available(RoHS Compliant)Top View of TO-252DApplications High Current Switching.G Uninterruptible Power Supply. Inverter Systems. Display & Lighting Equipment.SN-Channel MOSFETOrdering and Markin
apm2605c.pdf
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APM2605CP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-4.5A,SRDS(ON)=43m (typ.) @ VGS=-10V DDGRDS(ON)=60m (typ.) @ VGS=-4.5VDD Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-6(RoHS Compliant)(4)SApplications(3)G Power Management in Notebook Computer,Portable Equipment and Battery PoweredSystems.D D D
sm2604nsc.pdf
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SM2604NSCN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/7.4A,SRDS(ON)= 24m(max.) @ VGS=10VDDGRDS(ON)= 32.5m(max.) @ VGS=4.5VDD Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-6(RoHS Compliant)(1,2,5,6)DD DDApplications Power Management in Notebook Computer,(3)GPortable Equipment and Battery PoweredS
sm2328nsan.pdf
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SM2328NSANN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/4A,DRDS(ON)= 40m (max.) @ VGS= 4.5VSRDS(ON)= 55m (max.) @ VGS= 2.5VGRDS(ON)= 85m (max.) @ VGS= 1.8VTop View of Narrow SOT-23 Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in DC/AC Inverter Systems.SN-Channel MOSFETOrdering
sm2a04nsv.pdf
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SM2A04NSV N-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/1.9A, RDS(ON)= 400m (max.) @ VGS= 10VG Reliable and Rugged DS Lead Free and Green Devices AvailableTop View SOT-223 (RoHS Compliant)DApplications Power Management in TV Inverter.GSN-Channel MOSFETOrdering and Marking InformationPackage CodeSM2A04NS V : SOT-223Assembly MaterialO
apm2324aa.pdf
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APM2324AAN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/3A,DRDS(ON)= 50m(Typ.) @ VGS= 4.5VSRDS(ON)= 65m(Typ.) @ VGS= 2.5VGRDS(ON)= 120m(Typ.) @ VGS= 1.8V Reliable and Rugged Top View of SOT-23 Lead Free and Green Devices Available(RoHS Compliant)DGApplications Power Management in Notebook Computer,Portable Equipment and Ba
sm2501nsu.pdf
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SM2501NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/60A,Drain 4 RDS(ON)= 5m (Max.) @ VGS=10V3Source2 RDS(ON)= 6m (Max.) @ VGS=4.5V1Gate RDS(ON)= 7.5m (Max.) @ VGS=2.5V Reliable and RuggedTop View of TO-252-3 Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Motor Controls. High Frequency Isolated DC-DC Con
apm2055nu.pdf
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APM2055NU N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/10A,D RDS(ON)=55m (Typ.) @ VGS=10VS RDS(ON)=75m (Typ.) @ VGS=4.5VG RDS(ON)=140m (Typ.) @ VGS=2.5V Super High Dense Cell DesignTop View of TO-252 Reliable and Rugged Lead Free and Green Devices AvailableD (RoHS Compliant)ApplicationsG Power Management in Desktop Computer o
sm2222csqg.pdf
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SM2222CSQG Dual Enhancement Mode MOSFET (N- and P-Channel)Features Pin Description N-Channel 20V/4.5A,S2G2D1D1 RDS(ON)= 32m (max.) @ VGS=4.5VD2 RDS(ON)= 48.6m (max.) @ VGS=2.5VD2 RDS(ON)= 85m (max.) @ VGS=1.8VG1Pin 1S1 P-ChannelDFN2x2C-6_EP2 -20V/-2.7A, RDS(ON)= 85m (max.) @ VGS=-4.5VRDS(ON)= 127m (max.) @ VGS=-2.5V(3)D2(6)D1RDS(ON)= 230m (max.)
sm2213psqg.pdf
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SM2213PSQGP-Channel Enhancement Mode MOSFETFeatures Pin Description -8V/-9.4A,SDDRDS(ON) = 19m(max.) @ VGS =-4.5V DRDS(ON) = 24m(max.) @ VGS =-2.5VGSRDS(ON) = 33m(max.) @ VGS =-1.8V Pin 1DDRDS(ON) = 45m(max.) @ VGS =-1.5VDFN2x2-6RDS(ON) = 90m(max.) @ VGS =-1.2V Reliable and Rugged (1,2,5,6)DD DD Lead Free and Green Devices Available(RoH
sm2314nsa.pdf
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SM2314NSAN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/4.5A ,DRDS(ON)=45m (max.) @ VGS=4.5VRDS(ON)=60m (max.) @ VGS=2.5VSRDS(ON)=85m (max.) @ VGS=1.8VG Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23-3(RoHS Compliant)D ESD ProtectionApplicationsG Power Management in Notebook Computer,Portable Equipment and Batt
sm2370nsa.pdf
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SM2370NSAN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 100V/2A, RDS(ON)= 156m (max.) @ VGS=10VS RDS(ON)= 176m (max.) @ VGS=4.5VG ESD ProtectionTop View of SOT-23 100% UIS + Rg Tested Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in TV Inveter.SN-Channel MOSFETOrdering and Markin
sm2054nsd.pdf
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SM2054NSDN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/7.5A, RDS(ON)= 21m (max.) @ VGS= 10VSD RDS(ON)= 23m (max.) @ VGS= 4.5VG RDS(ON)= 36m (max.) @ VGS= 2.5V Reliable and RuggedTop View SOT-89 ESD Protection Lead Free and Green Devices AvailableD (2) (RoHS Compliant)G (1)Applications Switching RegulatorsS (3) Switching ConvertersN-Chann
sm2a12nskp.pdf
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SM2A12NSKPN-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/23A,DDDD RDS(ON)= 70m (max.) @ VGS= 10V Reliable and RuggedG Lead Free and Green Devices AvailableS Pin 1SS (RoHS Compliant)DFN5x6-8( 5,6,7,8 )D D DD(4)ApplicationsG Power Management in TV Converter. DC-DC Converter.S S S(1, 2, 3)N-Channel MOSFETOrdering and Marking
sm2617psc sm2621psc.pdf
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SM2621PSC P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionS -30V/-5.1A ,DDGRDS(ON)= 54m (Max.) @ VGS=-10VDRDS(ON)= 65m (Max.) @ VGS=-4.5VD RDS(ON)= 92m (Max.) @ VGS=-2.5VTop View of SOT-23-6 Reliable and Rugged Lead Free and Green Devices Available(1,2,5,6)(RoHS Compliant)DD DDApplications(3)G Power Management in Notebook Comput
sm2a08nsf.pdf
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SM2A08NSF N-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/10A,RDS(ON)=205m (max.) @ VGS=10V 100% UIS + Rg TestedSD Reliable and RuggedG Lead Free and Green Devices AvailableTop View of TO-220(RoHS Compliant)DApplicationsG High Frequency DC-DC Converters. Plasma Display Panel. Power Management in TV Converter.SN-Channel MOSFET
sm2416nsan.pdf
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SM2416NSAN N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 30V/0.83A , RDS(ON)=700m (max.) @ VGS=4.5VSRDS(ON)=1000m (max.) @ VGS=2.5VGRDS(ON)=1600m (max.) @ VGS=1.8V Reliable and RuggedTop View of SOT-23N Lead Free and Green Devices AvailableD(RoHS Compliant) ESD ProtectionGApplications High Speed and Analog Switching Applications.S Low volta
sm2404nsan.pdf
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SM2404NSAN N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 30V/5.1A, RDS(ON)=26.5m(max.) @ VGS=10V S RDS(ON)=36.5m(max.) @ VGS=4.5VG Reliable and RuggedTop View of SOT-23N Lead Free and Green Devices Available(RoHS Compliant)DApplicationsG Power Magangement in Notebook Computer,Portable Equipment and Battery Powered Systems.S Load Swit
sm2a12nsf.pdf
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SM2A12NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/25A, RDS(ON)= 70m (max.) @ VGS= 10V Reliable and RuggedS Lead Free and Green Devices AvailableDG (RoHS Compliant)Top View of TO-220DGApplications High Frequency DC-DC converters.S Plasma Display Panel. Power Management in TV Converter.N-Channel MOSFETOrdering and Marking Informati
sm2660nsc.pdf
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SM2660NSCN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/5A,SDRDS(ON)= 48m(max.) @ VGS=10VDGRDS(ON)= 59m(max.) @ VGS=4.5VDD Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-6(RoHS Compliant)(1,2,5,6)DDDDApplications(3)G High frequency DC-DC converters.(4)SN-Channel MOSFETOrdering and Marking Informa
sm2013pskp.pdf
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SM2013PSKP P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-100Aa,DDRDS(ON) = 3.0m (max.) @ VGS =-10V DDRDS(ON) = 3.9m (max.) @ VGS =-4.5VRDS(ON) = 5.7m (max.) @ VGS =-2.5VGPin 1SS 100% UIS + Rg TestedSDFN5x6A-8_EP Reliable and Rugged Lead Free and Green Devices Available( 5,6,7,8 )(RoHS Compliant)DDDDApplications(4) Portable Equi
apm2301ca.pdf
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APM2301CA P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-3ADRDS(ON)= 70m (max.) @ VGS= -4.5VSRDS(ON)= 115m (max.) @ VGS= -2.5VGRDS(ON)= 250m (max.) @ VGS= -1.8V Reliable and RuggedTop View of SOT-23 Lead Free and Green Devices Available( RoHS Compliant)DGApplications Power Management in Notebook Computer,Portable Equipment and
sm2608nsc.pdf
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SM2608NSCN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/7.4A,SDRDS(ON)= 17m(max.) @ VGS=10VDGRDS(ON)= 21.5m(max.) @ VGS=4.5VDD Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-6(RoHS Compliant)(1,2,5,6)DD DDApplications Power Management in Notebook Computer,(3)GPortable Equipment and Battery PoweredS
sm2300nsa.pdf
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SM2300NSAN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A ,DRDS(ON)=25m (max.) @ VGS=10VRDS(ON)=30m (max.) @ VGS=4.5VSRDS(ON)=40m (max.) @ VGS=2.5VGRDS(ON)=60m (max.) @ VGS=1.8V Reliable and Rugged Top View of SOT-23-3 Lead Free and Green Devices AvailableD(RoHS Compliant) ESD ProtectionGApplications Power Management in Notebook Computer
sm2290nsqg.pdf
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SM2290NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 150V/1.6A,DDRDS(ON) = 360m (max.) @ VGS =10VG S ESD ProtectionPin 1DD 100% UIS TestedDFN2x2A-6_EP Reliable and Rugged(1,2,5,6) Lead Free and Green Devices AvailableDDDD (RoHS Compliant)Applications(3)G For POE Power Primary Side Switch for(4)SLow. Power DC/DC Converters.
sm2215psqg.pdf
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SM2215PSQGP-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD -20V/-9.4A,DDRDS(ON) = 19m(max.) @ VGS =-4.5VRDS(ON) = 27m(max.) @ VGS =-2.5VGSPin 1DDRDS(ON) = 45m(max.) @ VGS =-1.8V Super High Dense Cell DesignDFN2x2-6 Reliable and Rugged(1,2,5,6)DD DD Lead Free and Green Devices Available(RoHS Compliant)Applications(3)G Powe
sm2620csc.pdf
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SM2620CSC Dual Enhancement Mode MOSFET (N- and P-Channel)Features Pin Description N-Channel 30V/4.9A, D2S1 RDS(ON)=39m(max.) @ VGS=10VD1G2S2 RDS(ON)=68m(max.) @ VGS=4.5VG1 P-ChannelTop View of SOT-23-6 -30V/-3A,RDS(ON)=100m(max.) @ VGS=-10V(4)D2(6)D1RDS(ON)=170m(max.) @ VGS=-4.5V Reliable and Rugged Lead Free and Green Devices Availabl
sm2333psa.pdf
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SM2333PSAP-Channel Enhancement Mode MOSFETFeatures Pin Description -12V/-6.3A,DRDS(ON) = 26m (max.) @ VGS =-4.5VSRDS(ON) = 33m (max.) @ VGS =-2.5VGRDS(ON) = 40m (max.) @ VGS =-1.8VRDS(ON) = 60m (max.) @ VGS =-1.5VTop View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in Notebook Comput
sm2335psa.pdf
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SM2335PSAP-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-7.1A,DRDS(ON) = 22m (max.) @ VGS =-4.5VRDS(ON) = 30m (max.) @ VGS =-2.5VSRDS(ON) = 45m (max.) @ VGS =-1.8VG Reliable and RuggedTop View of SOT-23-3 Lead Free and Green Devices Available(RoHS Compliant) HBM ESD protection level pass 2KV DNote : The diode connected between the gate andsour
sm2202nsqg.pdf
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SM2202NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 30V/8.4A,DDRDS(ON) = 15.5m(max.) @ VGS =10VRDS(ON) = 21m(max.) @ VGS =4.5VGSD Pin 1D Avalanche RatedDFN2x2-6 Reliable and Rugged Lead Free and Green Devices Available(1,2,5,6)DD DD(RoHS Compliant) 100% UIS TestedApplications(3)G Power Management in Notebook Computer,
sm2006nsk.pdf
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SM2006NSKN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 20V/10A,DDRDS(ON) = 18m (max.) @ VGS = 4.5VRDS(ON) = 27m (max.) @ VGS = 2.5VSS 100% UIS TestedSG Reliable and RuggedTop View of SOP-8 Lead Free Available (RoHS Compliant)( 5,6,7,8 )D D D DApplications(4)G Power Management in Desktop Computer or DC/DC Converters.S S
sm2303psa.pdf
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SM2303PSAP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-4A,DRDS(ON) = 56m (max.) @ VGS =-10VSRDS(ON) = 88m (max.) @ VGS =-4.5VG Reliable and RuggedTop View of SOT-23-3 Lead Free and Green Devices Available(RoHS Compliant)DApplicationsG Power Management in Notebook Computer,Portable Equipment and Battery PoweredSSystems.P-Channel MOSFE
sm2f07nsu.pdf
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SM2F07NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 250V/5.2A,DRDS(ON)= 690m (Max.) @ VGS=10VS 100% UIS + Rg TestedG Reliable and RuggedTop View of TO-252-2 Lead Free and Green Devices Available(RoHS Compliant)DApplicationsG Power Management in TV Inverter.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM2F07NS U : TO
sm2630dsc.pdf
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SM2630DSC Dual N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/4A,D2S1 RDS(ON)=39m(max.) @ VGS=10VD1G2 RDS(ON)=68m(max.) @ VGS=4.5VS2G1 Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-6(RoHS Compliant)(6)D1 (4)D2(1)(3)ApplicationsG1G2 Power Management in Notebook Computer,Portable Equipment and Ba
sm2054nsv.pdf
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SM2054NSVN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/7.5A, RDS(ON)= 23.5m (max.) @ VGS= 10VG RDS(ON)= 27m (max.) @ VGS= 4.5VDS RDS(ON)= 42m (max.) @ VGS= 2.5V Reliable and RuggedTop View SOT-223 ESD Protection Lead Free and Green Devices AvailableD (2) (RoHS Compliant)G (1)Applications Switching RegulatorsS (3) Switching ConvertersN-Ch
sm2670nsc.pdf
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SM2670NSCN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/2.6A,SD RDS(ON)= 156m(max.) @ VGS=10VDG RDS(ON)= 176m(max.) @ VGS=4.5VDD ESD Protection 100% UIS TestedTop View of SOT-23-6 Reliable and Rugged(1,2,5,6) Lead Free and Green Devices AvailableDDDD(RoHS Compliant)Applications(3)G Power Management in DC/DC Converter.(4)S
sm2700csc.pdf
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SM2700CSC Dual Enhancement Mode MOSFET (N- and P-Channel)FeaturesPin Description N-Channel 20V/2A,D2RDS(ON)= 125m(typ.) @ VGS= 4.5VS1D1G2RDS(ON)= 175m(typ.) @ VGS= 2.5VS2G1RDS(ON)= 280m(typ.) @ VGS= 1.8V P-Channel Top View of SOT-23-6-20V/-1.4A,RDS(ON)= 255m(typ.) @ VGS= -4.5V(4)D2(6)D1RDS(ON)= 400m(typ.) @ VGS= -2.5VRDS(ON)= 600m
sm2a11nsf.pdf
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SM2A11NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/58A, RDS(ON)= 26.5m (max.) @ VGS= 10V 100% UIS + Rg TestedS Reliable and RuggedDG Lead Free and Green Devices AvailableTop View of TO-220 (RoHS Compliant)DApplicationsG Synchronous Rectification. Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Marking Informatio
sm2323psa.pdf
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SM2323PSAP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-2.9A,D RDS(ON) = 108m (max.) @ VGS =-10VS RDS(ON) = 182m (max.) @ VGS =-4.5VG Reliable and RuggedTop View of SOT-23-3 Lead Free and Green Devices Available (RoHS Compliant) ESD ProtectionDNote : The diode connected between the gate andsource serves only as protection against ESD. Nogat
sm2312nsa.pdf
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SM2312NSA N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/3A,D RDS(ON)=72m (max.) @ VGS=10VS RDS(ON)=100m (max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-3(RoHS Compliant)DApplicationsG DC-DC Conversion. Load Switch for PC fields.S Load Switch for Portables.N-Channel MOSFETOrdering and Marki
sm2203nsqg.pdf
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SM2203NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 30V/7.4A,DDRDS(ON) = 20.5m(max.) @ VGS =10VRDS(ON) = 28.5m(max.) @ VGS =4.5VGSPin 1DD Reliable and RuggedDFN2x2-6 Lead Free and Green Devices Available (RoHS Compliant)(1,2,5,6)DD DD 100% UIS TestedApplications(3)G Power Management in Notebook Computer,(4)SPortable
sm2430nsan.pdf
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SM2430NSAN N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 30V/1.49A , RDS(ON)= 390m(max.) @ VGS=4.5VS RDS(ON)= 420m(max.) @ VGS=4VG RDS(ON)= 820m(max.) @ VGS=2.5V Reliable and RuggedTop View of SOT-23N Lead Free and Green Devices AvailableD(RoHS Compliant) ESD Protection : HBM>3KV, MM>200VRGApplications G High Speed and Analog Switch
sm2300nsan.pdf
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SM2300NSANN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/4A,DRDS(ON)= 40m(max.) @ VGS= 4.5VSRDS(ON)= 55m(max.) @ VGS= 2.5VGRDS(ON)= 85m(max.) @ VGS= 1.8VTop View of SOT-23N Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in DC/AC Inverter Systems.SN-Channel MOSFET
sm2360nsa.pdf
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SM2360NSA N-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/2.7A ,DRDS(ON)=104m (max.) @ VGS=10VS RDS(ON)=130m (max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-3(RoHS Compliant)DApplicationsG Power Management in DC/AC Inverer Systems.SN-Channel MOSFETOrdering and Marking InformationSM2360NS Packa
sm2011pskp.pdf
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SM2011PSKP P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-100Aa,DDRDS(ON) = 2.0m (max.) @ VGS =-10V DDRDS(ON) = 2.5m (max.) @ VGS =-4.5VRDS(ON) = 3.6m (max.) @ VGS =-2.5VGPin 1SS 100% UIS + Rg TestedSDFN5x6A-8_EP ESD Protection Reliable and Rugged( 5,6,7,8 ) Lead Free and Green Devices Available DDDD(RoHS Compliant)(4)Applications
sm2a04nsu.pdf
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SM2A04NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/8A,Drain 4RDS(ON)= 400m (Max.) @ VGS= 10V3Source2 Reliable and Rugged1Gate Lead Free and Green Devices Available(RoHS Compliant)Top View of TO-252-3DApplicationsG Power Management in TV Inverter.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM2A04NS U : TO-
sm2014nskp.pdf
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SM2014NSKPN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/13.8A,DDDDRDS(ON)= 19.5m (max.) @ VGS=4.5VRDS(ON)= 27m (max.) @ VGS=2.5VGPin 1 Reliable and RuggedSSS Lead Free and Green Devices AvailableDFN5x6-8(RoHS Compliant) ESD Protection.D (5, 6)ApplicationsG (4) Power Management in Notebook Computer,Portable Equipment and Battery
sm2223psqg.pdf
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SM2223PSQG P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD -12V/-11A,DDRDS(ON) = 13.8m(max.) @ VGS =-4.5VRDS(ON) = 19m(max.) @ VGS =-2.5V SGPin 1DDRDS(ON) = 26m(max.) @ VGS =-1.8VRDS(ON) = 36m(max.) @ VGS =-1.5VDFN2x2-6 Reliable and Rugged(1,2,5,6)DD DD Lead Free and Green Devices Available(RoHS Compliant)Applications(3)G
sm2310nsa.pdf
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SM2310NSA N-Channel Enhancement Mode MOSFETFeatures Pin Description 55V/2.1A ,D RDS(ON)=130m (max.) @ VGS=4.5VS RDS(ON)=180m (max.) @ VGS=2.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-3(RoHS Compliant)DApplicationsG Power Management in DC/AC Inverer Systems.SN-Channel MOSFETOrdering and Marking InformationSM2310NS Pac
sm2a06nsf.pdf
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SM2A06NSF N-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/18A,RDS(ON)=140m (max.) @ VGS=10V Reliable and RuggedSD Lead Free and Green Devices AvailableG(RoHS Compliant)Top View of TO-220DApplicationsG Power Management in TV Inverter.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM2A06NS F : TO-220Assembly MaterialOper
sm2558nub.pdf
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SM2558NUBN-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/60A,RDS(ON)=4.5m (Typ.) @ VGS=10VRDS(ON)=7.5m (Typ.) @ VGS=4.5VSD Reliable and RuggedG Avalanche Rated Lead Free and Green Devices AvailableTop View of TO-251(RoHS Compliant)D 100% UIS + Rg TestedApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-C
sm2304nsa.pdf
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SM2304NSA N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/5.1A,D RDS(ON)=25m(max.) @ VGS=10VS RDS(ON)=35m(max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-3(RoHS Compliant)D 100% UIS + Rg TestedApplicationsG Power Magangement in Notebook Computer,Portable Equipment and Battery Powered Sys
sm2260nsqg.pdf
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SM2260NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 60V/5.2A,DDRDS(ON) = 48m(max.) @ VGS =10VRDS(ON) = 59m(max.) @ VGS =4.5V SGPin 1DD Reliable and RuggedDFN2x2-6 Lead Free and Green Devices Available (RoHS Compliant)(1,2,5,6)DDDD 100% UIS TestedApplications(3)G High frequency DC-DC converters.(4)SN-Channel MOSFETOr
sm2a02nsu.pdf
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SM2A02NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/16A,DRDS(ON)=90m (Max.) @ VGS=10VS Reliable and RuggedG Lead Free and Green Devices Available(RoHS Compliant) Top View of TO-252-3DApplicationsG Power Management in TV Converter. DC-DC Converter.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM2A02NS U : TO-252-3
sm2205psqg.pdf
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SM2205PSQGP-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD -20V/-6.5A,DDRDS(ON) = 39m(max.) @ VGS =-4.5VRDS(ON) = 56m(max.) @ VGS =-2.5VGSPin 1DD Reliable and RuggedDFN2x2-6 Lead Free and Green Devices Available(RoHS Compliant)(1,2,5,6)DD DDApplications(3)G Power Management in Notebook Computer,(4)SPortable Equipment and Bat
apm2303a.pdf
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APM2303AP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-4A, D RDS(ON)=55m (max.) @ VGS=-10VS RDS(ON)=70m (max.) @ VGS=-4.5VG RDS(ON)=115m (max.) @ VGS=-2.5VTop View of SOT-23-3 Super High Dense Cell DesignD Reliable and Rugged Enhance ESD Cell Protection Lead Free and Green Devices Available(RoHS Compliant)GApplications P
sm2a08nsfp.pdf
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SM2A08NSFP N-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/9A,RDS(ON)=205m (max.) @ VGS=10V 100% UIS + Rg TestedSD Reliable and Rugged G Lead Free and Green Devices AvailableTop View of TO-220FP(RoHS Compliant)DApplicationsG High Frequency DC-DC Converters. Plasma Display Panel. Power Management in TV Converter.SN-Channel MOSFET
sm2206nsqg.pdf
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SM2206NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 20V/9A,DDRDS(ON) = 10.9m (max.) @ VGS =4.5VRDS(ON) = 15.5m (max.) @ VGS =2.5V SGPin 1DDRDS(ON) = 26m (max.) @ VGS =1.8V 100% UIS + Rg TestedDFN2x2A-6_EP Reliable and Rugged(1,2,5,6)DDDD Lead Free and Green Devices Available (RoHS Compliant)Applications(3)G Li-lon Battery Pac
sm2307psa.pdf
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SM2307PSA P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-6A , DRDS(ON)=29m (Max.) @ VGS=-4.5VSRDS(ON)=40m (Max.) @ VGS=-2.5VGRDS(ON)=60m (Max.) @ VGS=-1.8VTop View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices Available(RoHS Compliant)DApplicationsG Power Management in Notebook Computer,Portable Equipment and Battery Powered
sm2211psqg.pdf
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SM2211PSQGP-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD -30V/-7.9A,DDRDS(ON) = 27m (max.) @ VGS =-10VRDS(ON) = 42m (max.) @ VGS =-4.5VGSPin 1DD 100% UIS + Rg TestedDFN2x2A-6_EP Reliable and Rugged Lead Free and Green Devices Available(1,2,5,6)DD DD(RoHS Compliant)Applications(3)G Power Management in Notebook Computer,(4)SPort
sm2691psc.pdf
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SM2691PSC P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionS -150V/-1.1A ,DDGRDS(ON)= 750m (Max.) @ VGS=-10VDD 100% UIS + Rg Tested Reliable and RuggedTop View of SOT-23-6 Lead Free and Green Devices Available(RoHS Compliant)(1,2,5,6)DDDDApplications(3)G Load switch for Networking application.(4)SP-Channel MOSFETOrdering and Marking Info
apm2306a.pdf
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APM2306AN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/3.5A ,D RDS(ON)= 65m (max.) @ VGS=10VS RDS(ON)= 90m (max.) @ VGS=5VG Super High Dense Cell Design Reliable and RuggedTop View of SOT-23-3 Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in Notebook Computer,Portable Equipment and Battery PoweredSys
sm2001csk.pdf
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SM2001CSK Dual Enhancement Mode MOSFET (N- and P-Channel)Features Pin DescriptionD1 N-ChannelD1D2 20V/9.5A, D2 RDS(ON) =14m (max.) @ VGS = 4.5V RDS(ON) =18m (max.) @ VGS = 2.5VS1G1S2 P-ChannelG2 -20V/-6A,Top View of SOP 8 RDS(ON) =45m (max.) @ VGS =-4.5V RDS(ON) =65m (max.) @ VGS =-2.5V(8) (7) (6) (5)D1 D1 D2 D2 100% UIS + Rg Tested Reliable and Rug
sm2305psa.pdf
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SM2305PSA P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-4.9A , DRDS(ON)=43m (Max.) @ VGS=-4.5VSRDS(ON)=58m (Max.) @ VGS=-2.5VGRDS(ON)=88m (Max.) @ VGS=-1.8VTop View of SOT-23 100% UIS + Rg Tested Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in Notebook Computer,Po
sm2318nsa.pdf
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SM2318NSA N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/4.8A,D RDS(ON)=40m (max.) @ VGS=10VS RDS(ON)=48m (max.) @ VGS=4.5VG RDS(ON)=85m (max.) @ VGS=2.5V Reliable and RuggedTop View of SOT-23-3 Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in Notebook Computer,Portable Equipment and Battery Powered Sy
sm2316nsa.pdf
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SM2316NSAN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 30V/6.2A, RDS(ON)= 23.5m (max.) @ VGS=10VS RDS(ON)= 26m (max.) @ VGS=4.5VG RDS(ON)= 34m (max.) @ VGS=2.5V ESD Protection Top View of TSOT-23 100% UIS + Rg Tested Reliable and RuggedD Lead Free and Green Devices Available(RoHS Compliant)GApplications Load Switch. DC-DC converter.S Po
sm2363psa.pdf
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SM2363PSAP-Channel Enhancement Mode MOSFETFeatures Pin Description -60V/-1.8A,DRDS(ON)= 225m (max.) @ VGS=-10VRDS(ON)= 300m (max.) @ VGS=-4.5VS ESD ProtectionG 100% UIS+Rg TestedTop View of SOT-23 Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in DC/DC Converter. Load switch.SP-Channel MOSFET
apm2701ac.pdf
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APM2701AC Dual Enhancement Mode MOSFET (N- and P-Channel)Features Pin Description N-Channel 20V/3A,D2S1 RDS(ON)=50m(typ.) @ VGS=4.5VD1G2RDS(ON)=65m(typ.) @ VGS=2.5VS2G1 P-Channel-20V/-2A,Top View of SOT-23-6RDS(ON)=90m(typ.) @ VGS=-4.5V(4)D2RDS(ON)=130m(typ.) @ VGS=-2.5V (6)D1 Reliable and Rugged Lead Free and Green Devices Available(
sm2a08nsu.pdf
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SM2A08NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/10A,DRDS(ON)=210m (max.) @ VGS=10VS Reliable and RuggedG Lead Free and Green Devices Available(RoHS Compliant)Top View of TO-252-3DApplications High Current Switching.G Uninterruptible Power Supply. Inverter Systems. Display & Lighting Equipment.SN-Channel MOSFETOrdering and Mark
sm2692nsc.pdf
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SM2692NSCN-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/1.2A,SD RDS(ON)= 700m(max.) @ VGS=10VDG ESD ProtectionDD 100% UIS + Rg Tested Reliable and RuggedTop View of SOT-23-6 Lead Free and Green Devices Available(1,2,5,6)(RoHS Compliant)DDDDApplications(3)G DC-DC converter for Networking. Load switch.(4)SN-Channel MOSFETOrd
sm2a27nsfp.pdf
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SM2A27NSFP N-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/4A,RDS(ON)= 660m (Max.) @ VGS=10VRDS(ON)= 740m (Max.) @ VGS=4.5VS 100% UIS + Rg TestedDG Reliable and RuggedTop View of TO-220FP Lead Free and Green Devices Available(RoHS Compliant)D (2)ApplicationsG (1) Power Management in DC/DC Converter.S (3)N-Channel MOSFETOrdering and Mark
sm2425psan.pdf
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SM2425PSANP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-3.7A,D RDS(ON) = 64m(max.) @ VGS =-10VS RDS(ON) = 96m(max.) @ VGS =-4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23N (RoHS Compliant) ESD ProtectionDNote : The diode connected between the gate andsource serves only as protection against ESD. Nog
apm2360a.pdf
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APM2360A N-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/2.7A ,DRDS(ON)=104m (max.) @ VGS=10VS RDS(ON)=130m (max.) @ VGS=4.5VG 100% UIS + Rg Tested Reliable and RuggedTop View of SOT-23 Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in DC/AC Inverer Systems.SN-Channel MOSFETOrdering and Marking Informa
apm2300ca.pdf
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APM2300CAN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A ,DRDS(ON)=25m (typ.) @ VGS=10VSRDS(ON)=32m (typ.) @ VGS=4.5VGRDS(ON)=40m (typ.) @ VGS=2.5VRDS(ON)=65m (typ.) @ VGS=1.8V Top View of SOT-23 Reliable and RuggedD Lead Free and Green Devices Available(RoHS Compliant)GApplications Power Management in Notebook Computer,Port
sm2221csqg.pdf
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SM2221CSQG Dual Enhancement Mode MOSFET (N- and P-Channel)Features Pin Description N-Channel 12V/6.8A,S2G2D1D1 RDS(ON)= 21m(max.) @ VGS=4.5VD2 RDS(ON)= 27m(max.) @ VGS=2.5VD2 RDS(ON)= 39m(max.) @ VGS=1.8VG1Pin 1S1 RDS(ON)= 62m(max.) @ VGS=1.5VDFN2x2-6 P-Channel -12V/-4.4A, RDS(ON)= 50m(max.) @ VGS=-4.5V(3)D2(6)D1 RDS(ON)= 65
sm2a01nsfp.pdf
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SM2A01NSF/SM2A01NSFP N-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/65A, RDS(ON)= 28m (max.) @ VGS= 10V Reliable and RuggedS SD DG G Lead Free and Green Devices AvailableTop View of TO-220 Top View of TO-220-FP(RoHS Compliant)DApplicationsG Synchronous Rectification. Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Markin
sm2208nsqg.pdf
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SM2208NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 24V/12A,DDRDS(ON) = 5.8m (max.) @ VGS =10VRDS(ON) = 6.9m (max.) @ VGS =4.5VG SPin 1DDRDS(ON) = 10m (max.) @ VGS =2.5V 100% UIS + Rg TestedDFN2x2A-6_EP Reliable and Rugged(1,2,5,6)DDDD Lead Free and Green Devices Available (RoHS Compliant)Applications(3)G Battery Management A
sm2a01nsf.pdf
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SM2A01NSF/SM2A01NSFP N-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/65A, RDS(ON)= 28m(max.) @ VGS= 10V Reliable and RuggedS SD DG G Lead Free and Green Devices AvailableTop View of TO-220 Top View of TO-220FP(RoHS Compliant) 100% UIS + Rg TestedDApplicationsG Synchronous Rectification. Power Management in Inverter Systems.SN-Ch
sm2518nub.pdf
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SM2518NUBN-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/50A,RDS(ON)=8m (Typ.) @ VGS=10VRDS(ON)=15m (Typ.) @ VGS=4.5VSD Reliable and RuggedG Avalanche Rated Lead Free and Green Devices AvailableTop View of TO-251(RoHS Compliant) 100% UIS + Rg TestedDApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Channel
sm2309psa.pdf
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SM2309PSAP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-3.1A,DRDS(ON) = 95m (max.) @ VGS =-10VSRDS(ON) = 150m (max.) @ VGS =-4.5VG Reliable and RuggedTop View of SOT-23-3 Lead Free and Green Devices Available(RoHS Compliant)DGApplications Power Management in Notebook Computer,Portable Equipment and Battery PoweredSSystems.P-Channel MO
sm2308nsa.pdf
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SM2308NSA N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/5.2A ,D RDS(ON)= 35m (max.) @ VGS=10VS RDS(ON)= 45m (max.) @ VGS=4.5VG 100% UIS + Rg Tested Reliable and RuggedTop View of SOT-23 Lead Free and Green Devices Available(RoHS Compliant) D ESD ProtectionGApplications Load Switch. DC-DC converter.S Power Management Function.N-Channel
sm2004nsd.pdf
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SM2004NSD N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/7A, RDS(ON)= 22m (max.) @ VGS= 10VSD RDS(ON)= 28m (max.) @ VGS= 4.5VG RDS(ON)= 54m (max.) @ VGS= 2.5V 100% UIS and Rg testedTop View SOT-89 ESD Protection Reliable and RuggedD (2) Lead Free and Green Devices Available (RoHS Compliant)G (1)Applications Switching Regulators.S (3) Sw
sm2331psa.pdf
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SM2331PSA P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-3.9A, DRDS(ON)= 60m (Max.) @ VGS=-4.5VSRDS(ON)= 90m (Max.) @ VGS=-2.5VGRDS(ON)=150m (Max.) @ VGS=-1.8VTop View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in Notebook Computer,Portable Equipment and Battery Powere
sm2311psa.pdf
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SM2311PSAP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-3.8A,DRDS(ON) = 62m(max.) @ VGS =-10VSRDS(ON) = 90m(max.) @ VGS =-4.5VG ESD ProtectionTop View of SOT-23 100% UIS + Rg Tested Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)Applications G Power Management in Notebook Computer,Portable Equipment and Ba
sm2605psc.pdf
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SM2605PSCP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-7.5A,SDRDS(ON) = 30m(max.) @ VGS =-10VDGRDS(ON) = 45m(max.) @ VGS =-4.5VDD Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-6(RoHS Compliant)(1,2,5,6)DD DDApplications(3)G Power Management in Notebook Computer,Portable Equipment and Battery Powe
sm2613psc.pdf
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SM2613PSC P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-5.6A ,SDRDS(ON)= 45m (Max.) @ VGS=-4.5VDGRDS(ON)= 66m (Max.) @ VGS=-2.5VDDRDS(ON)=104m (Max.) @ VGS=-1.8V 100% UIS + Rg TestedTop View of SOT-23-6 Reliable and Rugged Lead Free and Green Devices Available (1,2,5,6)DD DD(RoHS Compliant)Applications(3)G Power Management in Noteb
sm2313psa.pdf
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SM2313PSA P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-3.5A, DRDS(ON)= 73m (Max.) @ VGS=-4.5VSRDS(ON)= 110m (Max.) @ VGS=-2.5VGRDS(ON)= 193m (Max.) @ VGS=-1.8VTop View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in Notebook Computer,Portable Equipment and Battery Powe
apm2309a.pdf
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APM2309A P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-2.2A,DRDS(ON)= 105m (typ.) @ VGS= -10VS RDS(ON)= 165m (typ.) @ VGS= -4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-3 (RoHS Compliant)DApplicationsG Power Management in Notebook Computer,Portable Equipment and Battery PoweredSystems.SP-Channel M
sm2315psa.pdf
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SM2315PSAP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-5A,DRDS(ON) = 42m (max.) @ VGS =-10VSRDS(ON) = 64m (max.) @ VGS =-4.5VG Reliable and RuggedTop View of SOT-23-3 Lead Free and Green Devices Available(RoHS Compliant)DGApplications Power Management in Notebook Computer,SPortable Equipment and Battery PoweredP-Channel MOSFETSystems
sm2320nsa.pdf
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SM2320NSAN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6.3A ,DRDS(ON)=23m (max.) @ VGS=10VRDS(ON)=27m (max.) @ VGS=4.5VSRDS(ON)=40m (max.) @ VGS=2.5VGRDS(ON)=72m (max.) @ VGS=1.8V ESD Protection Top View of SOT-23-3 Reliable and RuggedD Lead Free and Green Devices Available(RoHS Compliant)GApplications Power Management in Notebook Comput
sm2413psan.pdf
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SM2413PSAN P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD -20V/-3.5A,RDS(ON)= 73m (Max.) @ VGS=-4.5VSRDS(ON)= 110m (Max.) @ VGS=-2.5VGRDS(ON)= 193m (Max.) @ VGS=-1.8V Reliable and RuggedTop View of SOT-23N Lead Free and Green Devices Available(RoHS Compliant)DApplicationsG Power Management in Notebook Computer,Portable Equipment and
sm2609psc.pdf
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SM2609PSCP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-4A, SDRDS(ON) = 85m(max.) @ VGS =-10VDGDRDS(ON) = 135m(max.) @ VGS =-4.5VD Reliable and RuggedTop View of SOT-23-6 Lead Free and Green Devices Available(RoHS Compliant)(1,2,5,6)DD DDApplications(3)G Power Management in Notebook Computer,Portable Equipment and Battery Powere
apm2518nu.pdf
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APM2518NU N-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/50A,DRDS(ON)=8m (Typ.) @ VGS=10VSRDS(ON)=15m (Typ.) @ VGS=4.5VG Reliable and Rugged Avalanche RatedTop View of TO-252-3 Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrdering and Markin
sm2a18nsv.pdf
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SM2A18NSVN-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/1.1A,RDS(ON)= 1140m(max.) @ VGS= 10VG RDS(ON)= 1300m(max.) @ VGS= 4.5VDS 100% UIS+Rg tested Reliable and RuggedTop View SOT-223 Lead Free and Green Devices AvailableD (RoHS Compliant)ApplicationsG Power Management in TV Inverter.S N-Channel MOSFETOrdering and Marking In
csm260.pdf
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CSM260 N PD TC=25 250 W 2.0 W/ ID VGS=10V,TC=25 35 A ID VGS=10V,TC=100 28 A IDM 140 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.5 /W RthJA 48 /W BVDSS VGS=0V,ID=1.0mA 200 V VGS=10V,ID=28A 0.
cm2n60.pdf
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RCM2N60 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS
cm2n80f.pdf
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RC28FMN0 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 800V N-Channel VDMOS RoHS 1LDP E C21 2
cm20n60.pdf
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RCM20N60 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 2 3
cm20n50f.pdf
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RCM20N50F www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 500V N-Channel VDMOS RoHS 1 2 1 23
cm2n60c to251.pdf
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RCM2N60C www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS
cm2n80c.pdf
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RC28CMN0 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 800V N-Channel VDMOS RoHS 1LDP E C2
cm2n65c.pdf
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RCM2N65C www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS 1 LDPE C2 3
cm25n06.pdf
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RCM25N06 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 60V N-Channel Trench-MOS RoHS 1 2 3 TO-220A 4
cm20n50.pdf
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RCM20N50 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 500V N-Channel VDMOS RoHS 1 2 3
cm20n60f.pdf
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RCM20N60F www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 2 12 3
cm20n50pz.pdf
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RC2N0ZM05P www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 500V N-Channel VDMOS RoHS 121 2 33
cm20n50p.pdf
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RCM20N50P www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 500V N-Channel VDMOS RoHS 1 2 1 2 33
cm2n60f.pdf
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RCM2N60F www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS
cm20n60p to3pb.pdf
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RCM20N60P www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS
cm2n65f.pdf
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RCM2N65F www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS
cm2n60c.pdf
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RCM2N60C www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 2LDP E C122
cm220n04.pdf
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RCM220N04 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 40V N-Channel Trench-MOS RoHS 1 USP 2 3
wnm2024.pdf
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Product specificationWNM2024 Single N-Channel, 20V, 3.9A, Power MOSFET VDS (V) Rds(on) ()0.027@ VGS=4.5V20 0.031@ VGS=2.5V0.036@ VGS=1.8VSOT-23 Descriptions D 3 The WNM2024 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trenchtechnology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in 1 2 DC
wpm2015.pdf
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Product specificationWPM2015Single P-Channel, -20V, -2.4A, Power MOSFET VDS (V) Rds(on) ( )0.081@ VGS= 4.5V-200.103@ VGS= 2.5VSOT-23 DescriptionsDThe WPM2015 is P-Channel enhancement 3MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use in DC-DC conversion, power s
wnm2034.pdf
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Product specificationWNM2034N-Channel, 20V, 3.6A, Power MOSFET VDS (V) Rdson ( )0.037 @ 10V200.045 @ 4.5VDescriptionsSOT-23 The WNM2034 is N-Channel enhancement MOS DField Effect Transistor. Uses advanced trench technology 3and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion and power switch application
apm2701cg.pdf
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SMD Type MOSFETSMD Type TrMOSFETSMDTypeSMDTypeSMDType rSMDType ICSMD Type ICSMD Type oICSMD Type ansistICsProduct specificationKDS3601Features1.3 A, 100 V. RDS(ON) = 480m @VGS =10 VRDS(ON) = 530m @VGS =6VLow gate charge (3.7 nC typical)Fast switching speedHigh performance trench technology for extremely low RDS(ON)High power and current handling capabilityAbs
wnm2027.pdf
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Product specificationWNM2027N-Channel, 20V, 3.6A, Power MOSFET Rds(on) IdV(BR)DSS(Max. m) (A) 45 @ 4.5V 3.6 20 55 @ 2.5V 3.1 66 @ 1.8V 1.5 SOT-23 DDescriptions3The WNM2027 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC
wnm2025.pdf
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Product specificationWNM2025 Single N-Channel, 20V, 3.9 A, Power MOSFET VDS (V) Rds(on) ()0.027@ VGS=4.5V20 0.031@ VGS=2.5V0.036@ VGS=1.8VSOT-23-3L Descriptions D 3 The WNM2025 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trenchtechnology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in 1 2
wnm2020.pdf
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Product specificationWNM2020N-Channel, 20V, 0.90A, Small Signal MOSFET VDS (V) Rds(on) ( )0.220@ VGS=4.5V20 0.260@ VGS=2.5V0.320@ VGS=1.8VSOT-23 DescriptionsThe WNM2020 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)D3with low gate charge. This device is suitable for use in DC-DC convers
wnm2023.pdf
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Product specificationWNM2023 Single N-Channel, 20V, 3.2A, Power MOSFET VDS (V) Rds(on) ()0.038@ VGS=4.5V20 0.044@ VGS=2.5V0.052@ VGS=1.8VSOT-23-3L Descriptions D 3 The WNM2023 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trenchtechnology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC
wnm2016.pdf
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Product specificationWNM2016N-Channel, 20V, 3.2A, Power MOSFET V(BR)DSS Rds(on) 40 @ 4.5V 20 47 @ 2.5V 55 @ 1.8V SOT-23 DDescriptions3The WNM2016 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC 21conversion and power swit
wpm2341a.pdf
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Product specificationWPM2341AP-Channel Enhancement Mode MosfetFeatures Higher Efficiency Extending Battery Life Miniature SOT23-3 Surface Mount Package3 Super high density cell design for extremely low RDS (ON) 12Applications DC/DC Converter Load Switch SOT 23-3 Battery Powered System LCD Display inverter Power Management in Portable, Battery P
wpm2026.pdf
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Product specificationWPM2026 Single P-Channel, -20V, -3.2A, Power MOSFET VDS (V) Rds(on) ( ) 0.056@ VGS= 4.5V -20 0.069@ VGS= 2.5V 0.086@ VGS= 1.8V SOT-23 Descriptions D 3 The WPM2026 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in
wpm2015.pdf
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SMD Type MOSFETP-Channel MOSFETWPM2015 (KPM2015)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) =-20V ID =-2.4 A1 2+0.1+0.050.95-0.1 0.1-0.01 RDS(ON) 110m (VGS =-4.5V)+0.11.9-0.1 RDS(ON) 150m (VGS =-2.5V) Supper high density cell design1. Gate2. SourceD3. Drain31 2G S Absolute Maximum Rating
utm2054.pdf
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SMD Type MOSFETN-Channel MOSFETUTM2054 (KTM2054)1.70 0.1 Features VDS (V) = 20V ID = 5 A (VGS = 10V) RDS(ON) 40m (VGS = 10V)0.42 0.10.46 0.1 RDS(ON) 54m (VGS = 4.5V) RDS(ON) 130m (VGS = 2.5V)1.Gate Fast switching capability2.Drain3.SourceDrainGateSource Absolute Maximum Ratings Ta = 25Parameter Symbol Rat
wpm2005b.pdf
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SMD Type MOSFETP+Schottky Hybrid MOSFETWPM2005B (KPM2005B)DFN3X2-8L Unit:mm 0.35 (max)0.05 (max)0.24 (min) Features VDS (V) =-20V ID =-2.7 A (VGS =-10V) RDS(ON) 125m (VGS =-4.5V)0.25 (max)0.08 (min) RDS(ON) 160m (VGS =-2.5V)0.65 BSC0.80 0.13.00 BSC Ultra Low VF Schottky1 8A C72A C6S D3G D45 Absolu
wnm2020.pdf
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SMD Type MOSFETN-Channel MOSFETWNM2020 SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) = 20V ID = 0.83 A1 2 RDS(ON) 310m (VGS = 4.5V)+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1 RDS(ON) 360m (VGS = 2.5V) RDS(ON) 460m (VGS = 1.8V)1. Gate2. SourceD3. Drain31 2G S Absolute Maximum Ratings Ta = 2
sgm25pa12a8tfd.pdf
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SGM25PA12A8TFD 25A/1200V IGBT SGM25PA12A8TFD 25A/1200VVCE(sat)( ) =2.1V@IC=25A VCE(sat) A8 DBC
sgm200hf12a3tfd.pdf
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SGM200HF12A3TFD 200A, 1200V IGBT 0B SGM200HF12A3TFD 1B 200A1200VVCE(sat)( ) =2.2V@IC=200A VCE(sat) DBC A3
sgt10u60sdm2d.pdf
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SGT10U60SDM2D 10A600V C2SGT10U60SDM2D 4 PlusField Stop IV+ 1G UPS,SMPS PFC 3E 10A600VVCE(sat)( )=1.65V@ IC=10A
ru3030m2.pdf
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RU3030M2N-Channel Advanced Power MOSFETFeatures Pin Description 30V/30A, RDS (ON) =10m(Typ.)@VGS=10VDDD RDS (ON) =15m(Typ.)@VGS=4.5V D Super High Dense Cell Design Fast Switching Speed Low gate Charge 100% avalanche tested GSSS Lead Free and Green Devices Available (RoHS Compliant)PIN1PIN1PDFN3333DApplications Switching Applic
ru30e60m2.pdf
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RU30E60M2N-Channel Advanced Power MOSFETFeatures Pin Description 30V/60A, RDS (ON) =3m(Typ.)@VGS=10VDDD RDS (ON) =6m(Typ.)@VGS=4.5V D Super High Dense Cell Design Ulta Low On-Resistance ESD Protected(Rating 4KV HBM) Fast Switching Speed GSSS 100% avalanche testedPIN1 Lead Free and Green Devices Available (RoHS Compliant)PIN1PDFN33
ruh4040m2.pdf
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RUH4040M2N-Channel Advanced Power MOSFETFeatures Pin Description 40V/40A,RDS (ON) =5.5m(Typ.)@VGS=10V DDDDRDS (ON) =8m(Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche testedG Lead Free and Green Devices Available (RoHS Compliant)SSSPIN1PIN1PDFN3333DApplications DC/DC Converters On board power for
ruh3051m2.pdf
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RUH3051M2N-Channel Advanced Power MOSFETFeatures Pin Description 30V/50A,RDS (ON) =4.2m(Typ.)@VGS=10V DDDDRDS (ON) =6m(Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche testedG Lead Free and Green Devices Available (RoHS Compliant)SSSPIN1PIN1PDFN3333DApplications DC/DC Converters On board power for
ru30d20m2.pdf
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RU30D20M2N-Channel Advanced Power MOSFETFeatures Pin Description 30V/20A, RDS (ON) =8.5m(Typ.)@VGS=10VD2D2D1D1 RDS (ON) =11.5m(Typ.)@VGS=4.5V Super High Dense Cell Design Fast Switching Speed Low gate ChargeG2 100% avalanche testedS1G1S2 Lead Free and Green Devices Available (RoHS Compliant) PIN1PIN1PDFN3333D1 D2Applications Switchi
ru3040m2.pdf
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RU3040M2N-Channel Advanced Power MOSFETFeatures Pin Description 30V/40A,RDS (ON) =5.8m(Typ.)@VGS=10VDDDRDS (ON) =8.2m(Typ.)@VGS=4.5VDRDS (ON) =16.8m(Typ.) @VGS=2.5V Super High Dense Cell Design Fast Switching Speed Low gate Charge GSSS 100% avalanche testedPIN1 Lead Free and Green Devices Available (RoHS Compliant)PIN1PDFN3333D
ruq4040m2.pdf
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RUQ4040M2N-Channel Advanced Power MOSFETFeatures Pin Description 40V/40A,RDS (ON) =5m(Typ.)@VGS=10VDDDDRDS (ON) =6.5m(Typ.)@VGS=4.5V AEC-Q101 Qualified for Automotive Applications Ultra Low On-Resistance Uses Ruichips Advanced RUISGTTM Technology 100% Avalanche TestedGSS Lead Free and Green Devices (RoHS Compliant)SPIN1PDFN3333D
am2304.pdf
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AiT Semiconductor Inc. AM2304 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES AM2304 is available in a SOT-23 package. 30V/5.1A R = 25m(max.) @ V = 10V DS(ON) GSR = 35m(max.) @ V = 4.5V DS(ON) GS Reliable and Rugged Available in a SOT-23 package. ORDERING INFORMATION APPLICATION Power Management in Notebook Computer, Por
am2n7002.pdf
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AiT Semiconductor Inc. AM2N7002 www.ait-ic.com SMALL SIGNAL MOSFET 115mA, 60 VOLTS N-CHANNEL MOSFET DESCRIPTION FEATURES Available in SOT-23 and SC70-3 packages. ESD Protected: 1000V Available in SOT-23 and SC70-3 packages ORDERING INFORMATION N CHANNEL MOSFET Package Type Part Number AM2N7002E3R SOT-23 E3 AM2N7002E3VR SC70-3 AM2N7002C3R C3 (SOT-323) AM2N7002C3
am2303.pdf
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AiT Semiconductor Inc. AM2303 www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM2303 is the P-Channel logic enhancement -30V/-4.3A, R =50m(typ.)@V =-10V DS(ON) GSmode power field effect transistor is produced using -30V/-3.5A, R =58m(typ.)@V =-4.5V DS(ON) GShigh cell density. advanced trench technology to -30V/-2.5A, R =73m(typ.
am2301.pdf
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AiT Semiconductor Inc. AM2301 www.ait-ic.com MOSFET -20V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM2301 is the P-Channel logic enhancement -20V/-3.2A, R =90m(typ.)@V =-4.5V DS(ON) GSmode power field effect transistor is produced using -20V/-2.0A, R =130m(typ.)@V =-2.5VDS(ON) GShigh cell density. Advanced trench technology to Super high density cell de
am2305.pdf
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AiT Semiconductor Inc. AM2305 www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM2305 is the P-Channel logic enhancement -30V/-4A, R = 55m@V = -10V DS(ON) GS mode power field effect transistor is produced using -30V/-3A, R = 64m@V = -4.5V DS(ON) GShigh cell density. Advanced trench technology to -30V/-2A, R = 85m@V = -2.5V DS(ON)
am2n7002k.pdf
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AiT Semiconductor Inc. AM2N7002K www.ait-ic.com MOSFET SMALL SIGNAL MOSFET 380mA, 60 VOLTS DESCRIPTION FEATURES The AM2N7002K is available in SOT-23 Package ESD Protected Low R DS(ON) Surface Mount Package RoHS Compliant Available in SOT-23 package ORDERING INFORMATION APPLICATION Low Side Load Switch Package Type Part Number Level Shift Circ
am2319.pdf
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AiT Semiconductor Inc. AM2319 www.ait-ic.com MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES AM2319 is available in a SOT-23S package. -40V/-3A, R = 80m(max.) @ V = -10V DS(ON) GSR = 120m(max.) @ V = -4.5V DS(ON) GS Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Available in a SOT-23S package. ORDERING INFORM
am2306.pdf
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AiT Semiconductor Inc. AM2306 www.ait-ic.com -30V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM2306 is the N-Channel logic enhancement -30V/3.6A, R = 45m(typ.)@V = 10V DS(ON) GSmode power field effect transistor is produced using 30V/2.8A, R = 55m(typ.)@V = 4.5V DS(ON) GShigh cell density. Advanced trench technology to Super high density cell desi
am2n7002dw.pdf
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AiT Semiconductor Inc. AM2N7002DW www.ait-ic.com N-CHANNEL MOSFET SMALL SIGNAL MOSFET 115mA, 60 VOLTS DESCRIPTION FEATURES Available in SOT-363 package. ESD Protected: 1000V Available in SOT-363 package ORDERING INFORMATION N CHANNEL MOSFET Package Type Part Number SOT-363 AM2N7002DWC6R C6 (SC70-6) AM2N7002DWC6VR V: Halogen free Package Note R: Tape & Reel SPQ:
am2317.pdf
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AM2317 AiT Semiconductor Inc. www.ait-ic.com MOSFET -20V P-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM2317 is the P-Channel logic enhancement -20V/-4.6A, R =35m(typ.)@V =-4.5V DS(ON) GSmode power field effect transistor is produced using -20V/-4.1A,R =45m(typ.)@V =-2.5V DS(ON) GShigh cell density advanced trench technology. -20V/-3.6A,R =53m(t
am2342.pdf
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AiT Semiconductor Inc. AM2342 www.ait-ic.com MOSFET 20V N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM2342 is the N-Channel logic enhancement 20V/5.0A, R =25m(typ.)@V =4.5V DS(ON) GSmode power field effect transistor is produced using 20V/4.5A, R =34m(typ.)@V =2.5V DS(ON) GShigh cell density. Advanced trench technology to 20V/4.0A, R =48m(typ.)@V =1.8
am2308.pdf
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AiT Semiconductor Inc. AM2308 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES AM2308 is available in a SOT-23 package. 60V/2.7A, R = 104m(max.) @ V = 10V DS(ON) GSR = 130m(max.) @ V = 4.5V DS(ON) GS Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Available in a SOT-23 package. ORDERING INFORMATI
am2300.pdf
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AiT Semiconductor Inc. AM2300 www.ait-ic.com MOSFET 20V N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM2300 is the N-Channel logic enhancement 20V/4.0A, R =26m(typ.)@V =4.5V DS(ON) GSmode power field effect transistor is produced using 20V/3.0A, R =31m(typ.)@V =2.5V DS(ON) GShigh cell density. Advanced trench technology to 20V/2.0A, R =44m(typ.)@V =1.8
am2n7002w.pdf
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AiT Semiconductor Inc. AM2N7002W www.ait-ic.com N-CHANNEL MOSFET SMALL SIGNAL MOSFET 115mA, 60 VOLTS DESCRIPTION FEATURES Available in SOT-323 package. ESD Protected: 1000V Available in SOT-323 package ORDERING INFORMATION N CHANNEL MOSFET Package Type Part Number SOT-323 AM2N702WC3R C3 (SC70-3) AM2N702WC3VR V: Halogen free Package Note R: Tape & Reel SPQ: 3,0
blm2302.pdf
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Pb Free Product BLM2302 N-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe BLM2302 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES V = 20V,I = 2.9A D
blm22n10-p blm22n10-d.pdf
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Green Product BLM22N10 100V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM22N10 uses advanced trench technology to provide V = 100V,I = 50A DS Dexcellent R , low gate charge. It can be used in a wide R
blm2010e.pdf
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ROHS Product BLM2010E N-Channel Enhancement Mode Power MOSFET Description The BLM2010E uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features V = 20V,I =7A DS DTyp.R
blm2301.pdf
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Pb Free Product BLM2301 P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe BLM2301 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram V = -20V,I = -3A DS DR
blm2305.pdf
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Pb Free Product BLM2305 P-Channel Enhancement Mode Power MOSFET Description D The BLM2305 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features V = -20V,I = -4.2ADS D RDS(ON)
chm2313qgp.pdf
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CHENMKO ENTERPRISE CO.,LTDCHM2313QGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4.6 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-74/SOT-457FEATURE* Small flat package. (SC-74/SOT-457)* High density cell design for extremely low RDS(ON). * Rugged and reliable. (1) (6)
chm2316gp.pdf
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CHENMKO ENTERPRISE CO.,LTDCHM2316GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High sat
chm2082jgp.pdf
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CHENMKO ENTERPRISE CO.,LTDCHM2082JGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 11 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High satu
chm2407jgp.pdf
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CHENMKO ENTERPRISE CO.,LTDCHM2407JGPSURFACE MOUNT Dual P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 5.3 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High
chm2316qgp.pdf
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CHENMKO ENTERPRISE CO.,LTDCHM2316QGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 6 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-74/SOT-457FEATURE* Small flat package. (SC-74/SOT-457)* High density cell design for extremely low RDS(ON). * Rugged and reliable. (1) (6)*
chm20p06pagp.pdf
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CHENMKO ENTERPRISE CO.,LTDCHM20P06PAGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 13 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small flat package. ( TO-252 )* High density cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* Rugged
chm2304gp.pdf
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CHENMKO ENTERPRISE CO.,LTDCHM2304GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 2.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High sat
chm2301esgp.pdf
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CHENMKO ENTERPRISE CO.,LTDCHM2301ESGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 2.8 AmpereAPPLICATION* Po rtable* High speed switchFEATURESOT-23* Small surface mounting type. (SOT-23)* High density cell design for low RDS(ON)* Suitable for high packing density.* Rugged and reliable.(1)* High saturation current capabili
chm25n15lpagp.pdf
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CHENMKO ENTERPRISE CO.,LTDCHM25N15LPAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect TransistorVOLTAGE 150 Volts CURRENT 25 AmpereAPPLICATION* Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON)..094 (2.40).280 (7.10)* High power and current handing capa
chm2331gp.pdf
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CHENMKO ENTERPRISE CO.,LTDCHM2331GPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 4.2 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High sat
chm21a2pagp.pdf
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CHENMKO ENTERPRISE CO.,LTDCHM21A2PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 20 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power
chm21a3pagp.pdf
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CHENMKO ENTERPRISE CO.,LTDCHM21A3PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 20 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power
chm2331qgp.pdf
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CHENMKO ENTERPRISE CO.,LTDCHM2331QGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 4.2 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-74/SOT-457FEATURE* Small flat package. (SC-74/SOT-457)* High density cell design for extremely low RDS(ON). * Rugged and reliable. (1) (6)
chm2362gp.pdf
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CHENMKO ENTERPRISE CO.,LTDCHM2362GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 3 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High satur
chm2310gp.pdf
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CHENMKO ENTERPRISE CO.,LTDCHM2310GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.* High saturati
chm2314gp.pdf
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CHENMKO ENTERPRISE CO.,LTDCHM2314GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High satur
chm2703qgp.pdf
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CHENMKO ENTERPRISE CO.,LTDCHM2703QGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 7 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-74/SOT-457FEATURE* Small flat package. (SC-74/SOT-457)* High density cell design for extremely low RDS(ON). * Rugged and reliable. (1) (6)*
chm2108jgp.pdf
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CHENMKO ENTERPRISE CO.,LTDCHM2108JGPSURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 9.5 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged an
chm210bgp.pdf
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CHENMKO ENTERPRISE CO.,LTDCHM210BGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect TransistorVOLTAGE 100 Volts CURRENT 1.3 AmpereAPPLICATION* Servo motor control.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON).* Rugged and reliable.(2)* High saturation current capability.(3)
chm2313gp.pdf
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CHENMKO ENTERPRISE CO.,LTDCHM2313GPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 3.6 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High sat
chm2321gp.pdf
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CHENMKO ENTERPRISE CO.,LTDCHM2321GPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 3.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)(3) 0.95
chm2323gp.pdf
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CHENMKO ENTERPRISE CO.,LTDCHM2323GPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4.1 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High sat
chm2401jgp.pdf
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CHENMKO ENTERPRISE CO.,LTDCHM2401JGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 6 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High power a
chm2030jgp.pdf
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CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNT CHM2030JGPDual Enhancement Mode Field Effect TransistorN-channel: VOLTAGE 20 Volts CURRENT 6 AmpereP-channel: VOLTAGE 20 Volts CURRENT 4.3 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low R
chm2313gp-a.pdf
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CHENMKO ENTERPRISE CO.,LTDCHM2313GP-ASURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 3.6 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High s
chm2346esgp.pdf
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CHENMKO ENTERPRISE CO.,LTDCHM2346ESGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect TransistorVOLTAGE 60 Volts CURRENT 2.9 AmpereAPPLICATION* Servo motor control.* Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON).* Rugged and reliable.(2)* High satu
chm2308esgp.pdf
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CHENMKO ENTERPRISE CO.,LTDCHM2308ESGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 5.4 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High s
chm2307gp.pdf
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CHENMKO ENTERPRISE CO.,LTDCHM2307GPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 3.2 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High sat
chm20n06pagp.pdf
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CHENMKO ENTERPRISE CO.,LTDCHM20N06PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 20 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power
chm2305gp.pdf
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CHENMKO ENTERPRISE CO.,LTDCHM2305GPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High satur
chm2342gp.pdf
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CHENMKO ENTERPRISE CO.,LTDCHM2342GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts CURRENT 4.2 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High sat
ctm2n7002.pdf
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CTM2N7002Crownpo TechnologySmall Signal MOSFETFeatures General DescriptionHigh Density Cell Design for Low RDS(ON)This N-Channel enhancement mode field effect transistorVoltage Controlled Small Signal Switchis produced using high cell density,DMOS technology.TheseRugged and Reliableproducts have been designed to minimize on-stateHigh Saturation Current Capabilityresistance
dm2g75sh6a.pdf
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DM2G75SH6AJuly. 2010High Power NPT & Rugged IGBT ModuleDescription Equivalent Circuit and Package DAWINS IGBT module devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drivesand other applications where switching losses are sign
dm2g150sh12a.pdf
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PreliminaryD WTMD WTMApr. 2008DM2G150SH12ADAWIN ElectronicsDAWIN ElectronicsHigh Power SPT+ & Lugged Type IGBT ModuleDescriptionEquivalent Circuit and Package DAWINS IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power
dm2g100sh12a.pdf
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PreliminaryDM2G100SH12AApr. 2008High Power SPT+ & Lugged Type IGBT ModuleDescriptionEquivalent Circuit and Package DAWINS IGBT 7DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power inverters, motors drives and other applications wh
dm2g300sh6a.pdf
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DM2G300SH6AAug. 2009High Power NPT & Rugged Type IGBT ModuleDescription Equivalent Circuit and Package DAWINS IGBT 7DM-3 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drivesand other applications where switching los
dm2g100sh6n.pdf
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DM2G100SH6NJan. 2012High Power Rugged Type IGBT ModuleDescriptionEquivalent Circuit and Package DAWINS IGBT module devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drivesand other applications where switching losses are sign
dm2g150sh6n.pdf
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D WTMD WTMDM2G150SH6NDAWIN ElectronicsDAWIN ElectronicsJan. 2012High Power Rugged Type IGBT ModuleEquivalent Circuit and Package DescriptionDAWINS IGBT 7DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors dri
dm2g150sh12ae.pdf
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PreliminaryD WTMD WTMDAWIN ElectronicsDAWIN Electronics DM2G150SH12AEDec. 2008High Power SPT+ & Lugged Type IGBT ModuleDescriptionEquivalent Circuit and Package DAWINS IGBT 7DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power
dm2g200sh6a.pdf
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D WTMD WTMDM2G200SH6ADAWIN ElectronicsDAWIN ElectronicsAug. 2009High Power NPT & Rugged Type IGBT ModuleDescriptionEquivalent Circuit and Package DAWINS IGBT 7DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, moto
dm2g150sh6a.pdf
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D WTMD WTMDM2G150SH6ADAWIN ElectronicsDAWIN ElectronicsAug. 2009High Power NPT & Rugged Type IGBT ModuleDescriptionEquivalent Circuit and Package DAWINS IGBT 7DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, moto
dm2g200sh12ae.pdf
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PreliminaryD WTMD WTMDAWIN ElectronicsDAWIN Electronics DM2G200SH12AEDec. 2008High Power SPT+ & Lugged Type IGBT ModuleDescriptionEquivalent Circuit and Package Equivalent Circuit and PackageDAWINS IGBT 7DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modul
dm2g200sh6n.pdf
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D WTMD WTMDM2G200SH6NDAWIN ElectronicsDAWIN ElectronicsJan. 2012High Power Rugged Type IGBT ModuleDescriptionEquivalent Circuit and Package DAWINS IGBT 7DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power inverters, motors drive
dm2g400sh6a.pdf
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DM2G400SH6AAug. 2009High Power NPT & Rugged Type IGBT ModuleDescription Equivalent Circuit and Package DAWINS IGBT 7DM-3 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drivesand other applications where switching los
dm2g400sh6n.pdf
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DM2G400SH6NJan. 2012High Power Rugged Type IGBT ModuleDescription Equivalent Circuit and Package DAWINS IGBT 7DM-3 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drivesand other applications where switching losses ar
dm2g50sh6a.pdf
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DM2G50SH6AApr. 2008High Power NPT & Lugged Type IGBT ModuleDescriptionEquivalent Circuit and Package DAWINS IGBT module devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power inverters, motors drivesand other applications where switching losses are
dm2g300sh6ne.pdf
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D WTMD WTMDM2G300SH6NEDAWIN ElectronicsDAWIN ElectronicsJan. 2012High Power Rugged Type IGBT ModuleDescription Equivalent Circuit and Package DAWINS IGBT 7DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors dri
dm2g50sh6n.pdf
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DM2G50SH6NJan. 2012High Power Rugged Type IGBT ModuleDescription Equivalent Circuit and Package DAWINS IGBT module devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drivesand other applications where switching losses are signif
dm2g300sh12a.pdf
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PreliminaryD WTMD WTMDM2G300SH12ADAWIN ElectronicsDAWIN ElectronicsMar. 2008High Power SPT+ & Lugged Type IGBT ModuleDescriptionEquivalent Circuit and Package Equivalent Circuit and PackageDAWINS IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modul
dm2g100sh6a.pdf
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DM2G100SH6AJuly. 2010High Power NPT & Rugged Type IGBT ModuleDescription Equivalent Circuit and Package DAWINS IGBT module devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drivesand other applications where switching losses ar
dm2g150sh6ne.pdf
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D WTMD WTMDM2G150SH6NEDAWIN ElectronicsDAWIN ElectronicsJan. 2012High Power Rugged Type IGBT ModuleEquivalent Circuit and Package DescriptionDAWINS IGBT module devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives6
dm2g75sh6n.pdf
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DM2G75SH6NJan. 2012High Power Rugged Type IGBT ModuleDescription Equivalent Circuit and Package DAWINS IGBT module devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drivesand other applications where switching losses are signif
dm2g200sh12a.pdf
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PreliminaryD WTMD WTMMar. 2008DM2G200SH12ADAWIN ElectronicsDAWIN ElectronicsHigh Power SPT+ & Lugged Type IGBT ModuleHigh Power SPT+ & Lugged Type IGBT ModuleDescriptionEquivalent Circuit and Package Equivalent Circuit and PackageDAWINS IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical syste
dm2g50sh12a.pdf
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DM2G50SH12AMar. 2008High Power SPT+ & Lugged Type IGBT ModuleDescriptionEquivalent Circuit and Package DAWINS IGBT 7DM-1 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power inverters, motors drives and other applications where switching
dm2g75sh12a.pdf
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Mar. 2008DM2G75SH12ADM2G75SH12AHigh Power SPT+ & Lugged Type IGBT ModuleDescriptionEquivalent Circuit and Package DAWINS IGBT 7DM-1 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power inverters, motors drives and other applications whe
dim2400ess12-a.pdf
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DIM2400ESS12-A000 Single Switch IGBT Module Replaces DS5840-1.1 DS5840-2 October 2010 (LN27616) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V Non Punch Through Silicon IC (max) 2400A Isolated Cu Base with Al2O3 Substrates IC(PK) (max) 4800A Lead Free construction * Measured at the power busbars, not the auxiliary
dim200phm33-f.pdf
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DIM200PHM33-F000 Half Bridge IGBT Module Replaces DS5606-4 DS5606-5 October 2011 (LN28814) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.8V High Thermal Cycling Capability IC (max) 200A Soft Punch Through Silicon IC(PK) (max) 400A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals Le
dim200pkm33-f.pdf
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DIM200PKM33-F000 IGBT Chopper Module Replaces DS5865-2 DS5865-3 October 2011 (LN28813) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.8V High Thermal Cycling Capability IC (max) 200A Soft Punch Through Silicon IC(PK) (max) 400A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals Lead F
dim250pkm33-ts.pdf
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DIM250PKM33-TS000 IGBT Chopper Module Replaces DS6106-1 DS6106-2 July 2013 (LN30763) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 250A High Current Density Enhanced DMOS SPT IC(PK) (max) 500A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals
dim250plm33-tl.pdf
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DIM250PLM33-TL000 IGBT Chopper Module DS6115-1 July 2013 (LN30664) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10s Short Circuit Withstand IC (max) 250A High Thermal Cycling Capability IC(PK) (max) 500A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base with AlN Subs
dim250pkm33-tl.pdf
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DIM250PKM33-TL000 IGBT Chopper Module DS6117-1 July 2013 (LN30666) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10s Short Circuit Withstand IC (max) 250A High Thermal Cycling Capability IC(PK) (max) 500A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base with AlN Subs
dim250phm33-tl.pdf
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DIM250PHM33-TL000 Half Bridge IGBT Module DS6116-1 July 2013 (LN30665) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10s Short Circuit Withstand IC (max) 250A High Thermal Cycling Capability IC(PK) (max) 500A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base with AlN
dim250phm33-ts.pdf
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DIM250PHM33-TS000 Half Bridge IGBT Module DS6092-1 April 2013 (LN30402) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 250A High Current Density Enhanced DMOS SPT IC(PK) (max) 500A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals APPLICATIONS
dim2400esm17-a.pdf
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DIM2400ESM17-A000 Single Switch IGBT Module Replaces DS54447-5 DS5447-6 June 2012 (LN29603) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1700V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 2400A Non Punch Through Silicon IC(PK) (max) 4800A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the aux
dim250plm33-ts.pdf
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DIM250PLM33-TS000 IGBT Chopper Module Replaces DS6108-1 DS6108-2 July 2013 (LN30764) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 250A High Current Density Enhanced DMOS SPT IC(PK) (max) 500A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals
dim2400esm12-a.pdf
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DIM2400ESM12-A000 Single Switch IGBT Module Replaces DS5536-3.0 DS5536-4 October 2010 (LN27615) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 2400A Non Punch Through Silicon IC(PK) (max) 4800A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the
dim200plm33-f.pdf
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DIM200PLM33-F000 IGBT Chopper Module Replaces DS5864-2 DS5864-3 October 2011 (LN28812) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.8V High Thermal Cycling Capability IC (max) 200A Soft Punch Through Silicon IC(PK) (max) 400A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals Lead F
elm24604ha.pdf
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Complementary MOSFET ELM24604HA-SGeneral Description Features ELM24604HA-S uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=40V Vds=-40Vand low gate charge. Id=8A(Vgs=10V) Id=-8A(Vgs=-10V) Rds(on)
elm24603ha.pdf
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Complementary MOSFET ELM24603HA-SGeneral Description Features ELM24603HA-S uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=60V Vds=-60Vand low gate charge. Id=12A(Vgs=10V) Id=-12A(Vgs=-10V) Rds(on)
gsm2317.pdf
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GSM2317 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM2317, P-Channel enhancement mode -40V/-3.6A,RDS(ON)=52m@VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-3.2A,RDS(ON)=67m@VGS=-4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited f
gsm2319as.pdf
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GSM2319AS 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM2319AS, P-Channel enhancement mode -40V/-3.0A,RDS(ON)=90m@VGS=-10V MOSFET, uses Advanced Trench -40V/-2.4A,RDS(ON)=120m@VGS=-4.5VTechnology to provide excellent RDS(ON), low Super high density cell design for gate charge. extremely low RDS (ON) Exceptional on-resistance andThes
gsm2311.pdf
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20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2311, P-Channel enhancement mode -20V/-4.0A,RDS(ON)=56m@VGS=4.5V MOSFET, uses Advanced Trench -20V/-3.2A,RDS(ON)=70m@VGS=2.5V Technology to provide excellent RDS(ON), low -20V/-2.8A,RDS(ON)=96m@VGS=1.8V gate charge. Super high density cell design for These devices are particularly suited f
gsm2330.pdf
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GSM2330 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM2330, N-Channel enhancement mode 90V/2.8A,RDS(ON)=190m@VGS=10V MOSFET, uses Advanced Trench Technology 90V/2.0A,RDS(ON)=200m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
gsm2519.pdf
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GSM2519 GSM2519 20V N&P Pair Enhancement Mode MOSFETProduct Description Features GSM2519, N & P Pair enhancement mode N-ChannelMOSFET, uses Advanced Trench Technology to 20V/4.5A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON), low gate charge. 20V/3.6A,RDS(ON)=60m@VGS=2.5V 20V/2.4A,RDS(ON)=80m@VGS=1.8V These devices are particularly suited for low P-Channelvoltage
gsm2912.pdf
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GSM2912 GSM2912 20V N-CH Enhancement Mode MOSFET Product Description Features GSM2912, N-Channel enhancement mode 20V/4.5A,RDS(ON)=50m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.6A,RDS(ON)=60m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.4A,RDS(ON)=78m@VGS=1.8V Super high density cell design for extremely These devices are particula
gsm2336a.pdf
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GSM2336A 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2336A, N-Channel enhancement mode 30V/1.8A,RDS(ON)=380m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 30V/1.5A,RDS(ON)=480m@VGS=2.5V provide excellent RDS(ON), low gate charge. 30V/1.2A,RDS(ON)=900m@VGS=1.8V Super high density cell design for extremely These devices are p
gsm2324.pdf
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GSM2324 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM2324, N-Channel enhancement mode 100V/2.3A,RDS(ON)=285m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/1.8A,RDS(ON)=295m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for lo
gsm2303a.pdf
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GSM2303A GSM2303A 30V P-Channel Enhancement Mode MOSFET Product Description Features -30V/-2.8A,RDS(ON)=145m@VGS=-10.0V GSM2303A, P-Channel enhancement mode -30V/-2.4A,RDS(ON)=180m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-res
gsm2323.pdf
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GSM2323 GSM2323 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM2323, P-Channel enhancement mode -30V/-3.6A,RDS(ON)=150m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-3.2A,RDS(ON)=235m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited fo
gsm2301as.pdf
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20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301AS, P-Channel enhancement mode -20V/-2.4A,RDS(ON)=125m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.0A,RDS(ON)=170m@VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low voltage
gsm2367as.pdf
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20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2367AS, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=80m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.5A,RDS(ON)=98m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-2.2A,RDS(ON)=130m@VGS=-1.8V These devices are particularly suited for low Super high density cell
gsm2304a.pdf
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GSM2304A 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304A, N-Channel enhancement mode 30V/2.6A,RDS(ON)=82m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=108m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low Exce
gsm2302as.pdf
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20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2302AS, N-Channel enhancement mode 20V/2.4A,RDS(ON)=90m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/2.0A,RDS(ON)=110m@VGS=2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low Exceptional on-
gsm2330a.pdf
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GSM2330A 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM2330A, N-Channel enhancement mode 90V/2.8A,RDS(ON)=200m@VGS=10V MOSFET, uses Advanced Trench Technology 90V/2.0A,RDS(ON)=210m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
gsm2333a.pdf
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GSM2333A GSM2333A 25V P-Channel Enhancement Mode MOSFET Product Description Features -25V/-2.8A,RDS(ON)=145m@VGS=-10V GSM2333A, P-Channel enhancement mode -25V/-2.4A,RDS(ON)=180m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-resis
gsm2301s.pdf
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20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301S, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=120m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.0A,RDS(ON)=170m@VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for These devices are particularly suited for low extremely low RDS (ON) volt
gsm2341.pdf
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P-Channel Enhancement Mode MOSFET Product Description Features GSM2341, P-Channel enhancement mode -20V/-3.0A,RDS(ON)= 50m@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.6A,RDS(ON)= 64m@VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.0A,RDS(ON)= 80m@VGS=-1.8V Super high density cell design for extremely These devices are particularly suited
gsm2911.pdf
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GSM2911 GSM2911 20V P-CH Enhancement Mode MOSFET Product Description Features GSM2911, P-Channel enhancement mode P-ChannelMOSFET, uses Advanced Trench Technology to -20V/-4.5A,RDS(ON)= 96m@VGS=-4.5V provide excellent RDS(ON), low gate charge. These -20V/-3.8A,RDS(ON)=128m@VGS=-2.5V devices are particularly suited for low voltage -20V/-2.5A,RDS(ON)=180m@VGS=-1.8V po
gsm2604.pdf
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40V N-Channel Enhancement Mode MOSFET Product Description Features GSM2604, N-Channel enhancement mode 40V/20A,RDS(ON)= 22m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/12A,RDS(ON)= 40m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power
gsm2309a.pdf
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GSM2309A 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM2309A, P-Channel enhancement mode -60V/-1.8A,RDS(ON)=305m@VGS=-10V MOSFET, uses Advanced Trench -60V/-1.6A,RDS(ON)=320m@VGS=-4.5V Technology to provide excellent RDS(ON), low Super high density cell design for gate charge. extremely low RDS (ON) Exceptional on-resistance and maxim
gsm2309.pdf
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GSM2309 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM2309, P-Channel enhancement mode -60V/-1.8A,RDS(ON)=305m@VGS=-10V MOSFET, uses Advanced Trench -60V/-1.4A,RDS(ON)=320m@VGS=-4.5V Technology to provide excellent RDS(ON), low Super high density cell design for gate charge. extremely low RDS (ON) Exceptional on-resistance and maximum
gsm2354.pdf
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GSM2354 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM2354, N-Channel enhancement mode 100V/3.2A,RDS(ON)=145m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/2.6A,RDS(ON)=160m@VGS=4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
gsm2318a.pdf
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GSM2318A 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM2318A, N-Channel enhancement mode 40V/2.6A,RDS(ON)=68m@VGS=10VMOSFET, uses Advanced Trench 40V/2.2A,RDS(ON)=88m@VGS=4.5VTechnology to provide excellent RDS(ON), low Super high density cell design for gate charge. extremely low RDS (ON) These devices are particularly suited for low
gsm2301a.pdf
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20V P-Channel Enhancement Mode MOSFET Product Description Features -20V/-2.6A,RDS(ON)=120m@VGS=-4.5V GSM2301A, P-Channel enhancement mode -20V/-2.2A,RDS(ON)=170m@VGS=-2.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) These devices are particularly suited for low
gsm2337a.pdf
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GSM2337A GSM2337A 30V P-Channel Enhancement Mode MOSFET Product Description Features -30V/-1.2A,RDS(ON)=890m@VGS=-10V GSM2337A, P-Channel enhancement mode -30V/-0.6A,RDS(ON)=1450m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-resi
gsm2312.pdf
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20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2312, N-Channel enhancement mode 20V/4.0A,RDS(ON)=36m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.2A,RDS(ON)=40m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=52m@VGS=1.8V These devices are particularly suited for low Super high density cell design for e
gsm2301.pdf
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20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=105m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.4A,RDS(ON)=155m@VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) volta
gsm2306a.pdf
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GSM2306A 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2306A, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=340m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=750m@VGS=1.8V Super high density cell design for These devices are particularl
gsm2376.pdf
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GSM2376 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM2376, N-Channel enhancement mode 60V/3.6A,RDS(ON)=70m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/2.8A,RDS(ON)=78m@VGS=4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low Exce
gsm2304.pdf
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GSM2304 GSM230430V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304, N-Channel enhancement mode 30V/3.6A,RDS(ON)=78m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.8A,RDS(ON)=105m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
gsm2304as.pdf
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GSM2304AS 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304AS, N-Channel enhancement mode 30V/2.4A,RDS(ON)=65m@VGS=10VMOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=90m@VGS=4.5Vto provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low SOT-2
gsm2379.pdf
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GSM2379 GSM2379 60V P-Channel Enhancement Mode MOSFET Product Description Features -60V/-3.6A,RDS(ON)=135m@VGS=-10.0V GSM2379, P-Channel enhancement mode -60V/-2.6A,RDS(ON)=150m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-resist
gsm2307a.pdf
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GSM2307A GSM2307A 20V P-Channel Enhancement Mode MOSFET Product Description Features -20V/-1.8A,RDS(ON)=520m@VGS=-4.5V GSM2307A, P-Channel enhancement mode -20V/-1.5A,RDS(ON)=870m@VGS=-2.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-resi
gsm2367s.pdf
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20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2367S, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=65m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.4A,RDS(ON)=80m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-2.0A,RDS(ON)=105m@VGS=-1.8V These devices are particularly suited for low Super high density cell d
gsm2318.pdf
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GSM2318 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM2318, N-Channel enhancement mode 40V/3.6A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/2.8A,RDS(ON)=80m@VGS=4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) Volta
gsm2319a.pdf
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GSM2319A 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM2319A, P-Channel enhancement mode -40V/-3.0A,RDS(ON)=100m@VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-2.4A,RDS(ON)=130m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited f
gsm2308a.pdf
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GSM2308A 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM2308A, N-Channel enhancement mode 60V/2.8A,RDS(ON)=135m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/2.0A,RDS(ON)=145m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
gsm2311a.pdf
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GSM2311A 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2311A, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=68m@VGS=-4.5V MOSFET, uses Advanced Trench -20V/-2.2A,RDS(ON)=80m@VGS=-2.5V Technology to provide excellent RDS(ON), low -20V/-1.8A,RDS(ON)=105m@VGS=-1.8V gate charge. Super high density cell design for These devices are parti
gsm2324a.pdf
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GSM2324A 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM2324A, N-Channel enhancement mode 100V/2.3A,RDS(ON)=310m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/1.8A,RDS(ON)=320m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for
gsm2303.pdf
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GSM2303 GSM2303 30V P-Channel Enhancement Mode MOSFET Product Description Features -30V/-3.6A,RDS(ON)=130m@VGS=-10.0V GSM2303, P-Channel enhancement mode -30V/-3.2A,RDS(ON)=170m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-resist
gsm2306ae.pdf
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GSM2306AE 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2306AE, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/1.5A,RDS(ON)=340m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=750m@VGS=1.8V Super high density cell design for These devices are particula
gsm2308.pdf
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GSM2308 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM2308, N-Channel enhancement mode 60V/3.6A,RDS(ON)=130m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/2.8A,RDS(ON)=140m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
gsm2302s.pdf
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GSM2302S GSM2302S 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2302S, N-Channel enhancement mode 20V/3.6A,RDS(ON)=85m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.2A,RDS(ON)=100m@VGS=2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for
gsm2913w.pdf
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GSM2913W GSM2913W 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM2913W, P-Channel enhancement mode -30V/-4.5A,RDS(ON)=120m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-3.8A,RDS(ON)=155m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited
gsm2014.pdf
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GSM2014 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2014, N-Channel enhancement mode 20V/10A,RDS(ON)=14m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/8A,RDS(ON)=17m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/5A,RDS(ON)=21m@VGS=1.8V Super high density cell design for extremely These devices are particularl
gsm2343a.pdf
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GSM2343A 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2343A, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=70m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.4A,RDS(ON)=92m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-2.0A,RDS(ON)=180m@VGS=-1.8V Super high density cell design for These devices are part
gsm2323a.pdf
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GSM2323A 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM2323A, P-Channel enhancement mode -30V/-2.8A,RDS(ON)=155m@VGS=-10VMOSFET, uses Advanced Trench -30V/-2.4A,RDS(ON)=240m@VGS=-4.5VTechnology to provide excellent RDS(ON), low Super high density cell design for gate charge. extremely low RDS (ON) These devices are particularly suited for
gsm2312a.pdf
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20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2312A, N-Channel enhancement mode 20V/2.8A,RDS(ON)=45m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/2.2A,RDS(ON)=48m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/1.8A,RDS(ON)=64m@VGS=1.8V These devices are particularly suited for low Super high density cell design for
gsm2304s.pdf
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GSM2304S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304S, N-Channel enhancement mode 30V/3.6A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.5A,RDS(ON)=85m@VGS=4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (O
ssfm2508.pdf
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SSFM2508 25V N-Channel MOSFET Main Product Characteristics: VDSS 25V SSFM2508SSFM2508RDS(on) 8mohm ID 55A Marking and pin Marking and pinTO-252 DPAKTO-252 DPAKassignmentassignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low
ssfm2506l.pdf
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SSFM2506L 25V N-Channel MOSFET Main Product Characteristics: VDSS 25V SSSFFM25006SSSFFM25006SSSFFM25006SSSFFM25006S M 25 8S M 25 8S M 25 8S M 25 8SS F M 2508SS F M 2508SS F M 2508SS F M 2508SSFM2506LSSFM2506L RDS(on) 6mohm Marking and pinMarking and pinMarking and pinMarking and pinMarking and pinMarking and pinMarking and pinMarking and pin
jfam20n50d.pdf
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JFAM20N50D 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
jfhm20n60e.pdf
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JFHM20N60E 600V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
jfam24n50c.pdf
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JFAM24N50C 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
jfam20n65c.pdf
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JFAM20N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
jfam20n60e.pdf
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JFAM20N60E 600V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
jffm20n60c.pdf
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JFFM20N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
jfpc20n50c jffm20n50c.pdf
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JFFM20N50C JFPC20N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 20A, 500V, RDS(on)typ. = 0.21@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf
jfhm20n60c.pdf
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JFHM20N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
jfam20n65e.pdf
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JFAM20N65E 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
jfam20n60d.pdf
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JFAM20N60D 600V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
jfam20n50c.pdf
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JFAM20N50C 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
jfam25n50e.pdf
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JFAM25N50E 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
jfpc24n50c jffm24n50c.pdf
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JFFM24N50C JFPC24N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 24A, 500V, RDS(on)typ. = 0.19@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf
jfam20n50e.pdf
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JFAM20N50E 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
jfam20n60c.pdf
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JFAM20N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
sum201mn.pdf
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SUM201MNP-Channel MOSFET + PNP BJTIntegrated Power MOSFET with PNP Low VCE(sat) Switching Transistor DFN-8 This integrated device represents a new level of safety andboard-space reduction by combining the 20V P-Channel FET with aPNP Silicon Low VCE(sat) switching transistor. This newly integratedproduct provides higher efficiency and accuracy for battery poweredMOSFET portab
skm200gah123dkl.pdf
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SKM200GAH123DKL 1200V 200A CHOPPER Module August 2011 PRELIMINARY RoHS Compliant FEATURES Ultra Low Loss High Ruggedness High Short Circuit Capability VCE(sat) With Positive Temperature Coefficient With Fast Free-Wheeling Diodes APPLICATIONS AC and DC motor control AC servo and robot drives Power supplies Welding inverters ABSOLUTE
skm200gal123dkld110.pdf
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SKM200GAL123DKLD110 1200V 200A RECTIFIER AND CHOPPER Module August 2011 PRELIMINARY RoHS Compliant FEATURES Ultra Low Loss High Ruggedness High Short Circuit Capability VCE(sat) With Positive Temperature Coefficient With Fast Free-Wheeling Diodes APPLICATIONS AC and DC motor control AC servo and robot drives Power supplies Welding in
mm25g120b.pdf
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MM25G120B 1200V 25A IGBT October 2012 PRELIMINARY RoHS Compliant FEATURES Low switching losses Low EMI Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery VCE(sat) with positive temperature coefficient APPLICATIONS High frequency switching application Medical applications 1.Gate Motion/servo con
mm20g3r135b.pdf
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MM20G3R135B1350V 20A RC- IGBTMarch 2018 Preliminary RoHS CompliantPRODUCT FEATURES 1350V Reverse conducting IGBT with monolithic body diode VCE(sat) with positive temperature coefficient Low switching losses Low EMI123APPLICATIONS HInductive cooking1.Gate Inverterized microwave ovens2.Collector3.Emitter Resonant converters Soft switchi
mm20n050p.pdf
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MM20N050P 500V 20A N-Channel MOSFET March 2011 PRELIMINARY RoHS Compliant FEATURES Low drain-source ON resistance High forward transfer admittance Repetitive avalanche ratings Simple drive requirements Ease of paralleling APPLICATIONS 1.GATE Switching power supplies 2.DRAIN Motor controls 3.SOURCE Inverters and choppers Audio a
mm25g3u120bx.pdf
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MM25G3U120BX1200V 25A IGBTAugust 2018 Preliminary RoHS CompliantPRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery123APPLICATIONS High frequency switching application1.Gate Medical ap
mm25g3t120b.pdf
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MM25G3T120B1200V 25A IGBTApril 2018 Version 01 RoHS CompliantPRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery123APPLICATIONS High frequency switching application1.Gate Medical appli
mm20g3t135b.pdf
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MM20G3T135B1350V 20A IGBTApril 2020 Version 02 RoHS CompliantPRODUCT FEATURES 1350V IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery123APPLICATIONS Induction Heating1.Gate Soft Switching Application
ost90n65hm2f.pdf
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OST90N65HM2F Enhancement Mode N-Channel Power IGBT General Description OST90N65HM2F uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
ost75n65hm2f.pdf
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OST75N65HM2F Enhancement Mode N-Channel Power IGBT General Description OST75N65HM2F uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
ost75n120hm2f.pdf
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OST75N120HM2F Enhancement Mode N-Channel Power IGBT General Description OST75N120HM2F uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM techn
ost75n65hem2f.pdf
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OST75N65HEM2F Enhancement Mode N-Channel Power IGBT General Description OST75N65HEM2F uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM techn
ost50n65hm2f.pdf
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OST50N65HM2F Enhancement Mode N-Channel Power IGBT General Description OST50N65HM2F uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
cm200dy-12h.pdf
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CM200DY-12HPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Dual IGBTMODH-Series Module200 Amperes/600 VoltsABH E E HSC2E1 E2 C1GC KSLDescription:R - M5 THD (3 TYP.)Powerex IGBTMOD ModulesP - DIA. (2 TYP.)are designed for use in switching.110 TABJ J Japplications. Each module consistsN Nof two IGBT Transistors
cm200tu-12f.pdf
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CM200TU-12FPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignSix IGBTMOD200 Amperes/600 VoltsJT (4 TYP.)KS - NUTS (5 TYP)KRCMN PP GUP EUP GVP EVP GWP EWPL N L N LB EQMGUN EUN GVN EVN GWN EWNTC TC MEASURING MEASURINGPOINT U V W POINTDescription:J JPowerex IGBTMOD ModulesLLLare designed
cm200du-12f.pdf
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CM200DU-12FPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignDual IGBTMOD200 Amperes/600 VoltsP - NUTS (3 PLACES)TC MEASURINGPOINTAN DQ (2 PLACES)EC2E1 E2 C1FB GHFDescription:Powerex IGBTMOD Modulesare designed for use in switchingM K K JRapplications. Each module consistsof two IGBT Transisto
fm200tu-07a.pdf
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FM200TU-07APowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 6-Pack High Power www.pwrx.comMOSFET Module100 Amperes/75 VoltsAG DF NHX (11 PLACES)G QK L M LPZACABAB NPRAD AEJ7 1 13W14B E TBSATCMEASUREDAF12 6 POINTU V WZ Z ZAA AADescription:YPowerex MOSFET Modules are VK M M XQUdesig
fm200tu-2a.pdf
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FM200TU-2APowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 6-Pack High Power www.pwrx.comMOSFET Module100 Amperes/100 VoltsAG DF NHX (11 PLACES)G QK L M LPZACABAB NPRAD AEJ7 1 13W14B E TBSATCMEASUREDAF12 6 POINTU V WZ Z ZAA AADescription:YPowerex MOSFET Modules are VK M M XQUdesig
fm200tu-3a.pdf
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FM200TU-3APowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 6-Pack High Power www.pwrx.comMOSFET Module100 Amperes/150 VoltsAG DF NHX (11 PLACES)G QK L M LPZACABAB NPRAD AEJ7 1 13W14B E TBSATCMEASUREDAF12 6 POINTU V WZ Z ZAA AADescription:YPowerex MOSFET Modules are VK M M XQUdesig
cm200dy-12nf.pdf
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CM200DY-12NFPowerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Dual IGBTMODNF-Series Module200 Amperes/600 VoltsTC MEASURED POINT(BASEPLATE)AF FE EG2E2 GBJN HC2E1 E2 C1 E1G1 GDescription:Powerex IGBTMOD ModulesK K Kare designed for use in switchingM NUTS LD(3 PLACES)(2 PLACES) applications. Each module co
pnm23t703e0-2.pdf
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PNM23T703E0-2 N-Channel MOSFET Description PNM23T703E0-2 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary VDS(V) RDS(on)() VGS(th)(V) ID(A) G1 40 7.5@ VGS=10V 0.5 to 1.5 0.2 S2 Electrical characteristics per line@25( unless otherwise specified)
pnm23t100v6.pdf
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PNM23T100V6 N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary D (2) VDS(V) RDS(on)(m) ID(A) 100 110@VGS=10V 6G (1) S (3) Absolute maximum rating@25 Parameter Symbol Maximum Units Drain-Source Voltage VDS 100 VGate-Source Voltage VGS 20 V Drain Current- C
srm20n65.pdf
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Datasheet 20A, 650V, N-Channel Power MOSFET SRM20N65General Description Symbol The Sanrise SRM20N65 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM20N65 break down voltage rating is 650V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at hi
srm2n60.pdf
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Datasheet 2A, 600V, N-Channel Power MOSFET SRM2N60General Description Symbol The Sanrise SRM2N60 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM2N60 break down voltage rating is 600V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high
src65r220m2.pdf
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Datasheet220m, 650V, Super Junction N-Channel Power MOSFET SRC65R220M2General Description SymbolThe Sanrise SRC65R220M2 is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity
src65r800m2.pdf
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Datasheet800m, 650V, Super Junction N-Channel Power MOSFET SRC65R800M2General Description SymbolThe Sanrise SRC65R800M2 is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity
skm200gb12e4.pdf
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SKM200GB12E4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 314 ATj = 175 CTc =80C 242 AICnom 200 AICRM ICRM = 3xICnom 600 AVGES -20 ... 20 VVCC = 800 VSEMITRANS3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CIGBT4 ModulesInverse diodeIF Tc =25C 229 ATj = 175 CSKM200GB12E4Tc =80C 172 A
skm200gal12t4.pdf
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SKM200GAL12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 314 ATj = 175 CTc =80C 242 AICnom 200 AICRM ICRM = 3xICnom 600 AVGES -20 ... 20 VVCC = 800 VSEMITRANS3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 229 ATj = 175 CSKM200GAL12T4Tc =80
skm200gar12e4.pdf
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SKM200GAR12E4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 313 ATj = 175 CTc =80C 241 AICnom 200 AICRM ICRM = 3xICnom 600 AVGES -20 ... 20 VVCC = 800 VSEMITRANS 3tpsc VGE 15 V Tj =150C 10 sVCES 1200 VTj -40 ... 175 CIGBT4 ModulesInverse diodeIF Tc =25C 229 ATj = 175 CSKM200GAR12E4Tc =
skm200gbd123d1s.pdf
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SEMITRANS MAbsolute Maximum Ratings ValuesIGBT ModulesSymbol Conditions 1) UnitsV 1200 VCESSKM 200 GBD 123 D 1SV R = 20 k 1200 VCGR GEI T = 25/80 C 200 / 180 AC caseI Tcase = 25/80 C; tp = 1 ms 400 / 360 ACMVGES 20 VPtot per IGBT, Tcase = 25 C 1380 WT , (T ) 40 . . .+150 (125) Cj stgVisol AC, 1 min. 2 500 7) Vhumidity DIN 40 040 Class Fc
skm200gal12e4.pdf
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SKM200GAL12E4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 314 ATj = 175 CTc =80C 242 AICnom 200 AICRM ICRM = 3xICnom 600 AVGES -20 ... 20 VVCC = 800 VSEMITRANS3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CIGBT4 ModulesInverse diodeIF Tc =25C 229 ATj = 175 CSKM200GAL12E4Tc =80C 172
skm200gb12t4.pdf
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SKM200GB12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 314 ATj = 175 CTc =80C 242 AICnom 200 AICRM ICRM = 3xICnom 600 AVGES -20 ... 20 VVCC = 800 VSEMITRANS3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 229 ATj = 175 CSKM200GB12T4Tc =80C
skm200ga123d.pdf
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SEMITRANS MAbsolute Maximum Ratings ValuesIGBT ModulesSymbol Conditions 1) ... 123 D ... 123 D1 UnitsV 1200 VCESSKM 200 GA 123 D*)V R = 20 k 1200 VCGR GESKM 200 GB 123 DI T = 25/80 C 200 / 180 AC caseSKM 200 GB 123 D1 6)I Tcase = 25/80 C; tp = 1 ms 400 / 360 ACMSKM 200 GAL 123 D 6)VGES 20 VSKM 200 GAR 123 D 6)Ptot per IGBT, Tcase = 25 C 1380 W
skm200gax173d skm200gay173d.pdf
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SEMITRANS MAbsolute Maximum RatingsValuesIGBT ModulesSymbol Conditions 1)UnitsVCES 1700 VVCGR RGE = 20 k 1700 V SKM 200 GAX 173 D 6)IC Tcase = 25/80 C 220 / 150 ASKM 200 GAY 173 D 6)ICM Tcase = 25/80 C; tp = 1 ms 440 / 300 AVGES 20 VPtot per IGBT, Tcase = 25 C 1250 WTj, (Tstg) 40 ... +150 (125) CVisol AC, 1 min. 4000 Vhumidity DIN 40 040 Class F
skm200gm12t4.pdf
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SKM200GM12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 314 ATj = 175 CTc =80C 242 AICnom 200 AICRM ICRM = 3xICnom 600 AVGES -20 ... 20 VVCC = 800 VSEMITRANS 3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 229 ATj = 175 CSKM200GM12T4Tc =80C
skm200gb12v.pdf
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SKM200GB12VAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 311 ATj = 175 CTc =80C 237 AICnom 200 AICRM ICRM = 3xICnom 600 AVGES -20 ... 20 VVCC = 720 VSEMITRANS 3tpsc VGE 20 V Tj =125C 10 sVCES 1200 VTj -40 ... 175 CInverse diodeIF Tc =25C 229 ATj = 175 CSKM200GB12VTc =80C 172 AIFnom
sefm250.pdf
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SEMITRONICS CORP. SEFM250 64 Commercial Street, Freeport, N.Y. 11520 N-Channel MOSFET Phone: (516) 623-9400 Fax. (516) 623-6954 FEATURES PACKAGE Isolated Case Hermetically Sealed Package Repetitive Avalanche Rating Dynamic dv/dt Rating Ceramic Eyelets MIL STX Screening Available APPLICATIONS High Reliability Power Supplies CASE
wvm20n8.pdf
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Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM20N8(MTM20N10) Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power
wvm21n50.pdf
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Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM21N50(IRF460)Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power s
wvm28n10.pdf
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Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM28N10(IRF140)Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power s
mtm26n40e.pdf
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Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM26N40(MTM26N40E) Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of pow
wvm20n50.pdf
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Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM20N50Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power source co
wvm25n40.pdf
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Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM25N(IRF360)Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power sou
ssm2312gn.pdf
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SSM2312GNN-channel Enhancement-mode Power MOSFETLow gate-charge BVDSS 20VDSimple drive requirement R 50mDS(ON)Fast switching ID 4.3AGPb-free; RoHS compliant.SDESCRIPTIONDThe SSM2312GN is in a SOT-23-3 package, which is widely used for lowerpower commercial and industrial surface mount applications. This device is Ssuitable for low-voltage applications such as DC
ssm2306gn.pdf
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SSM2306NN-CHANNEL ENHANCEMENT-MODE POWER MOSFETCapable of 2.5V gate-drive BVDSS 20VLower on-resistance RDS(ON) 32mDSurface-mount package ID 5.3ASSOT-23GDescriptionPower MOSFETs from Silicon Standard utilize advanced processing techniques toachieve the lowest possible on-resistance in an extremely efficient andDcost-effective device.The SOT-23 package is widely use
ssm2309gn.pdf
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SSM2309GNP-channel Enhancement-mode Power MOSFETLow gate-charge BVDSS -30VDSimple drive requirement R 75mDS(ON)Fast switching ID -3.7AGPb-free; RoHS compliant.SDESCRIPTIONDThe SSM2309GN is in a SOT-23-3 package, which is widely used for lowerpower commercial and industrial surface mount applications. It is well suitedSfor low voltage applications such as DC/DC c
ssm2313gn.pdf
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SSM2313GNP-channel Enhancement-mode Power MOSFETLow gate-charge BVDSS -20VDSimple drive requirement R 120mDS(ON)Fast switching ID -2.5AGPb-free; RoHS compliant.SDESCRIPTIONDThe SSM2313GN is in a SOT-23-3 package, which is widely used for lowerpower commercial and industrial surface mount applications. This device is Ssuitable for low-voltage applications such as
ssm2307gn.pdf
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SSM2307GNP-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY DBVDSS -16VSimple Drive Requirement RDS(ON) 60mSmall Package Outline Surface Mount Device ID - 4ASSOT-23GDESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. Dprovide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effec
ssm2304agn.pdf
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SSM2304AGNN-CHANNEL ENHANCEMENT-MODE POWER MOSFETSimple drive requirement BV 30VDSSDLower gate charge R 117mDS(ON)Fast switching characteristics ID 2.5ASSOT-23-3GDescriptionDAdvanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.GSThe SS
ssm2603gy.pdf
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SSM2603GYP-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY SBVDSS -20VSimple Drive Requirement DDRDS(ON) 65mSmall Package Outline Surface Mount Device GID -5.0ADSOT-26 DDESCRIPTION DAdvanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. GThe
ssm2605gy.pdf
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SSM2605GYP-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY SFast Switching Characteristic BVDSS -30VDLower Gate Charge D RDS(ON) 80mSmall Footprint & Low Profile Package G ID - 4ADSOT-26DDESCRIPTION Advanced Power MOSFETs utilized advanced processing techniques Dto achieve the lowest possible on-resistance, extremely efficient and ost-effectiveness d
ssm2303gn.pdf
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SSM2303NP-CHANNEL ENHANCEMENT-MODE POWER MOSFETSimple drive requirement BVDSS -30VSmall package outline RDS(ON) 240mDSurface-mount device ID - 1.7ASSOT-23GDescriptionDPower MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching, low on-resistance and cost-effectiveness. GSAbsolute Maximum RatingsSymbol Parameter Rating Un
ssm25t03gh ssm25t03gj.pdf
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SSM25T03GH,JN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM25T03 acheives fast switching performanceBVDSS 30Vwith low gate charge without a complex drive circuit. It isRDS(ON) 35msuitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 20AD The SSM25T03GH is in a TO-252 package, which isPb-free; RoHS
ssm2302gn.pdf
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SSM2302NN-CHANNEL ENHANCEMENT-MODE POWER MOSFETCapable of 2.5V gate drive BVDSS 20VSmall package outline RDS(ON) 85mDSurface-mount package ID 2.8ASSOT-23GDescriptionPower MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,Dlow on-resistance and cost-effectiveness.GSAbsolute Maximum RatingsSymbol Parameter Rating Uni
ssm2602gy.pdf
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SSM2602GYN-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY Capable of 2.5V gate drive BVDSS 20VSLower on-resistance DRDS(ON) 34mDSurface mount package ID 6.3ARoHS Compliant GDSOT-26 DDESCRIPTION Advanced Power MOSFETs utilized advanced processing techniques Dto achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness
ssm2305gn.pdf
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SSM2305GNP-channel Enhancement-mode Power MOSFETLow gate-charge BVDSS -20VDSimple drive requirement R 65mDS(ON)Fast switching ID -4.2AGPb-free; RoHS compliant.SDESCRIPTIONDThe SSM2305GN is in a SOT-23-3 package, which is widely used for lowerpower commercial and industrial surface mount applications. This device is Ssuitable for low-voltage applications such as
ssm20p02gh ssm20p02gj.pdf
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SSM20P02H,JP-CHANNEL ENHANCEMENT-MODEPOWER MOSFETSimple drive requirement D BVDSS -20V2.5V gate drive capability RDS(ON) 52m Fast switching ID -18AGSDescriptionPower MOSFETs from Silicon Standard provide theGDdesigner with the best combination of fast switching,STO-252(H)ruggedized device design, low on-resistance and cost-effectiveness.The TO-252 package is wi
ssm2602y.pdf
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SSM2602YN-CHANNEL ENHANCEMENT-MODE POWER MOSFETCapable of 2.5V gate drive BVDSS 20VSDLow on-resistance RDS(ON) 34mDSurface mount package ID 5.3AGDSOT-26DDescriptionThese Power MOSFETs from Silicon Standard utilize advanced processing techniques to achieve the lowest possible on-resistanceDin an extremely efficient and cost-effective device.The SOT-26 package
ssm2316gn.pdf
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SSM2316GNN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM2316GN acheives fast switching performanceBVDSS 30Vwith low gate charge without a complex drive circuit. ItRDS(ON) 42mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 4.7AD The SSM2316GN is supplied in an RoHS-compliantPb-free; RoHS-c
ssm2310gn.pdf
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SSM2310GNN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM2310GN acheives fast switching performanceBVDSS 60Vwith low gate charge without a complex drive circuit. ItRDS(ON) 90mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 3AD The SSM2310GN is supplied in an RoHS-compliantPb-free; RoHS-com
ssm2301gn.pdf
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SSM2301NP-CHANNEL ENHANCEMENT-MODE POWER MOSFETSimple drive requirement BV -20VDSSSmall package outline RDS(ON) 130mDSurface-mount device ID -2.3ASSOT-23GDescriptionDPower MOSFETs from Silicon Standard Corp. provide thedesigner with the best combination of fast switching, lowGon-resistance and cost-effectiveness.SThe SOT-23 package is widely preferred for co
ssm20g45egh.pdf
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SSM20G45EGH/JN-channel Insulated-Gate Bipolar TransistorPRODUCT SUMMARY DESCRIPTIONThe SSM20G45E acheives fast switching performanceV 450VCES with low gate charge without a complex drive circuit. It isVCE(sat) 5V typ.suitable for use in short-duration, high-current strobeapplications, such as still-camera flash. I 130ACP The SSM20G45EGH is in a TO-252 package, which is
ssm20n03s.pdf
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SSM20N03S,PN-CHANNEL ENHANCEMENT-MODEPOWER MOSFETDynamic dv/dt rating BVDSS 30VDRepetitive-avalanche rated RDS(ON) 52m Fast switching ID 20AGSimple drive requirementSDescriptionPower MOSFETs from Silicon Standard provide theGDdesigner with the best combination of fast switching,S TO-263ruggedized device design, low on-resistance and cost-effectiveness.The TO-
ssm2030gm.pdf
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SSM2030GMN- and P-channel Enhancement-mode Power MOSFETsN-CH BVDSS 20VSimple drive requirement D2D2D2 RDS(ON) 30mLower gate charge D1D1D1D1ID 6AFast switching characteristicsG2G2P-CH BVDSS -20VPb-free; RoHS compliant. S2S2 G1SO-8 S1G1RDS(ON) 50mS1 DESCRIPTIONID -5AAdvanced Power MOSFETs from Silicon Standard provide theD2D1designer wit
ssm2761p-a.pdf
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SSM2761P-AN-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY DBVDSS 650VLower On-resistance Fast Switching Characteristic RDS(ON) 1Simple Drive Requirement ID 10AGRoHS Compliant SDESCRIPTION The TO-220 package is universally preferred for all commercial- industrial applications. The device is suited for DC-DC ,AC-DC converters for power applications. G
ssm2314gn.pdf
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SSM2314GNN-channel Enhancement-mode Power MOSFETLow gate-charge BVDSS 20VDSimple drive requirement R 75mDS(ON)Fast switching ID 3.5AGPb-free; RoHS compliant.SDESCRIPTIONDThe SSM2314GN is in a SOT-23-3 package, which is widely used for lowerpower commercial and industrial surface mount applications. This device is Ssuitable for low-voltage applications such as DC
ssm2318gen.pdf
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SSM2318GENN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM2318GEN acheives fast switching performanceBVDSS 30Vwith low gate charge without a complex drive circuit. ItRDS(ON) 720mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 1AD The SSM2318GEN is supplied in an RoHS-compliantPb-free; RoHS
ssm2304gn.pdf
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SSM2304NN-CHANNEL ENHANCEMENT-MODE POWER MOSFETSimple drive requirement BV 25VDSSSmall package outline R 117mDDS(ON)Surface-mount package I 2.5ADSSOT-23GDescriptionPower MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching, low on-resistance and cost-effectiveness.DGSAbsolute Maximum RatingsSymbol Parameter Rati
ssm20g45egj.pdf
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SSM20G45EGH/JN-channel Insulated-Gate Bipolar TransistorPRODUCT SUMMARY DESCRIPTIONThe SSM20G45E acheives fast switching performanceV 450VCES with low gate charge without a complex drive circuit. It isVCE(sat) 5V typ.suitable for use in short-duration, high-current strobeapplications, such as still-camera flash. I 130ACP The SSM20G45EGH is in a TO-252 package, which is
ssm2030sd.pdf
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SSM2030SDN AND P-CHANNELENHANCEMENT-MODE POWER MOSFETSSimple drive requirement D2 N-ch BV 20VDSSD2D1Low on-resistance R 60mDS(ON)D1Fast switching I 2.6ADP-ch BVDSS -20VG2S2PDIP-8G1 RDS(ON) 80mS1Description ID -2.3APower MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,VinVoutruggedized device design,
ssm2603y.pdf
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SSM2603YP-CHANNEL ENHANCEMENT-MODE POWER MOSFETSimple drive requirement BVDSS -20VSDSmall package outline R 65mDS(ON)DSurface-mount device ID - 4.2AGDSOT-26DDescriptionDThese power MOSFETs from Silicon Standard utilize advanced processing techniques to achieve the lowest possible on-resistancein an extremely efficient and cost-effective device.GThe SOT-2
ssm28g45em.pdf
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SSM28G45EMN-CHANNEL INSULATED-GATE BIPOLAR TRANSISTORHigh input impedance VCE 450VCHigh peak current capability ICP 130ACCC3.3V gate driveCGGEESO-8EEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCECollector-Emitter Voltage 450 VVGEGate-Emitter Voltage 6 VVGEPPulsed Gate-Emitter Voltage 8 VICPPulsed Collector Current 130 APD @ T
ssm2305agn.pdf
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SSM2305AGNP-channel Enhancement-mode Power MOSFETLow gate-charge BVDSS -30VDSimple drive requirement R 80mDS(ON)Fast switching ID -3.2AGPb-free; RoHS compliant.SDESCRIPTIONDThe SSM2305AGN is in a SOT-23-3 package, which is widely used for lowerpower commercial and industrial surface mount applications. This device is Ssuitable for low-voltage applications such a
wpm2341.pdf
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WPM2341P-channel Enhancement Mode Power MOSFETFEATURESPWM applicationsLoad switchPower managementMAXIMUM RATINGS (TA=25 unless otherwise noted)Symbol Parameter Value UnitsVDS Drain-Source voltage -20 VVGS Gate-Source voltage 12 VID Drain current -3 APD Power Dissipation 1 WTj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERIST
wnm2021.pdf
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WNM2021SOT-323 Plastic-Encapsulate MOSFETSW NM2021 N-Channel MOSFET IDV(BR)DSS RDS(on)MAX SOT-323 58m@4.5V20 V 2.3A@2.5V86m1. GATE 2. SOURCE 3. DRAIN APPLICATION FEATURE Load Switch for Portable Devices TrenchFET Power MOSFET DC/DC Converter Equivalent Circuit MARKING Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value
st3401m23rg.pdf
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ST3401M23RG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401M23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phon
qm2409g.pdf
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QM2409G P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2409G is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 75m -3.7Afor most of the small power switching and load switch applications. Applications The QM2409G meet the RoHS and Green Product req
qm2402c1.pdf
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QM2402C1 N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2402C1 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 30m 2.7Afor most of the small power switching and load switch applications. Applications The QM2402C1 meet the RoHS and Green Product req
qm2401k.pdf
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QM2401K P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2401K is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 60m -3.4Afor most of the synchronous buck converter applications . Applications The QM2401K meet the RoHS and Green Product requirement ,
qm2416c1.pdf
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QM2416C1 N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2416C1 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 65m 1.8Afor most of the small power switching and load switch applications. Applications The QM2416C1 meet the RoHS and Green Product req
qm2404c1.pdf
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QM2404C1 N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2404C1 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 33m 2.6Afor most of the small power switching and load switch applications. Applications The QM2404C1 meet the RoHS and Green Product req
qm2605s.pdf
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QM2605S N-Ch and P-Ch Fast Switching MOSFETsGeneral Description Product SummeryThe QM2605S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 42m 4.6Acharge for most of the small power switching and -20V 130m -2.8Aload switch applications. The QM2605S meet the RoHS and Gr
qm2409j.pdf
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QM2409J P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2409J is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 75m -3.7Afor most of the small power switching and load switch applications. Applications The QM2409J meet the RoHS and Green Product req
qm2416y1.pdf
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QM2416Y1 N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2416Y1 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 65m 1.8Afor most of the small power switching and load switch applications. Applications The QM2416Y1 meet the RoHS and Green Product req
qm2423k.pdf
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QM2423K P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2423K is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 40m -4.2Afor most of the small power switching and load switch applications. Applications The QM2423K meet the RoHS and Green Product requ
qm2518c1.pdf
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QM2518C1 Dual N-Ch 20V Fast Switching MOSFETs General Description Product SummeryThe QM2518C1 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 90m 1.52Afor most of the small power switching and load switch applications. Applications The QM2518C1 meet the RoHS and Green Prod
qm2416j.pdf
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QM2416J N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2416J is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 48m 4.3Afor most of the small power switching and load switch applications. Applications The QM2416J meet the RoHS and Green Product requir
qm2409k.pdf
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QM2409K P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2409K is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 75m -3.1Afor most of the small power switching and load switch applications. Applications The QM2409K meet the RoHS and Green Product req
qm2507w.pdf
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QM2507W Dual P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2507W is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 80m -3.2Afor most of the small power switching and load switch applications. Applications The QM2507W meet the RoHS and Green Product
qm2415sn8.pdf
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QM2415SN8 P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2415SN8 is the highest performance trench P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate -20V 130m -2.5Acharge for most of the small power switching and load switch applications. Applications The QM2415SN8 meet the RoHS and Green Produ
qm2418c1.pdf
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QM2418C1 N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2418C1 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 90m 1.52Afor most of the small power switching and load switch applications. Applications The QM2418C1 meet the RoHS and Green Product re
qm2409v.pdf
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QM2409V P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2409V is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 75m -3.3Afor most of the small power switching and load switch applications. Applications The QM2409V meet the RoHS and Green Product req
qm2421k.pdf
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QM2421K P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2421K is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 43m -4Afor most of the small power switching and load switch applications. Applications The QM2421K meet the RoHS and Green Product requi
qm2502s.pdf
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QM2502S Dual N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2502S is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 18.5m 7Afor most of the small power switching and load switch applications. Applications The QM2502S meet the RoHS and Green Product r
qm2605v.pdf
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QM2605V N-Ch and P-Ch Fast Switching MOSFETsGeneral Description Product SummeryThe QM2605V is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 48m 3.8Acharge for most of the small power switching and -20V 130m -2.5Aload switch applications. The QM2605V meet the RoHS and Gr
qm2407k.pdf
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QM2407K P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2407K is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 32m -4.7Afor most of the small power switching and load switch applications. Applications The QM2407K meet the RoHS and Green Product req
qm2429s.pdf
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QM2429S P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2429S is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 15m -8.5Afor most of the small power switching and load switch applications. Applications The QM2429S meet the RoHS and Green Product req
qm2414v.pdf
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QM2414V N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2414V is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 50m 3.8Afor most of the small power switching and load switch applications. Applications The QM2414V meet the RoHS and Green Product requir
qm2404j.pdf
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QM2404J N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2404J is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 28m 5.8Afor most of the small power switching and load switch applications. Applications The QM2404J meet the RoHS and Green Product requir
qm2401d.pdf
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QM2401D P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2401D is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 52m -18.4Afor most of the synchronous buck converter applications . Applications The QM2401D meet the RoHS and Green Product requirement ,
qm2410j.pdf
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QM2410J N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2410J is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 37m 5.1Afor most of the small power switching and load switch applications. Applications The QM2410J meet the RoHS and Green Product requi
qm2413k.pdf
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QM2413K P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2413K is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 155m -2.2Afor most of the small power switching and load switch applications. Applications The QM2413K meet the RoHS and Green Product req
qm2410k.pdf
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QM2410K N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2410K is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 37m 4.2Afor most of the small power switching and load switch applications. Applications The QM2410K meet the RoHS and Green Product requir
qm2404k.pdf
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QM2404K N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2404K is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 28m 4.8Afor most of the small power switching and load switch applications. Applications The QM2404K meet the RoHS and Green Product requir
qm2410d.pdf
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QM2410D N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2410D is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 25m 22Afor most of the small power switching and load switch applications. Applications The QM2410D meet the RoHS and Green Product require
qm2401v.pdf
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QM2401V P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2401V is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 60m -3.6Afor most of the small power switching and load switch applications. Applications The QM2401V meet the RoHS and Green Product requ
qm2411j.pdf
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QM2411J P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2411J is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 80m -3.6Afor most of the small power switching and load switch applications. Applications The QM2411J meet the RoHS and Green Product req
qm2413v.pdf
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QM2413V P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2413V is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 155m -2.3Afor most of the small power switching and load switch applications. Applications The QM2413V meet the RoHS and Green Product req
qm2601s.pdf
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QM2601S N-Ch and P-Ch Fast Switching MOSFETsGeneral Description Product SummeryThe QM2601S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 18m 7.2Acharge for most of the small power switching and -20V 50m -4.5Aload switch applications. The QM2601S meet the RoHS and Gree
qm2403v.pdf
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QM2403V P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2403V is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 55m -3.8Afor most of the small power switching and load switch applications. Applications The QM2403V meet the RoHS and Green Product requ
qm2602s.pdf
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QM2602S N-Ch and P-Ch Fast Switching MOSFETsGeneral Description Product SummeryThe QM2602S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 16m 7.7 Acharge for most of the small power switching and -20V 50m -4.6 A load switch applications. The QM2602S meet the RoHS and G
qm2411k.pdf
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QM2411K P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2411K is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 80m -3Afor most of the small power switching and load switch applications. Applications The QM2411K meet the RoHS and Green Product requir
qm2421m3.pdf
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QM2421M3 P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2421M3 is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 32m -24Afor most of the small power switching and load switch applications. Applications The QM2421M3 meet the RoHS and Green Product r
qm2411g.pdf
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QM2411G P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2411G is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 80m -3.6Afor most of the small power switching and load switch applications. Applications The QM2411G meet the RoHS and Green Product req
qm2502w.pdf
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QM2502W Dual N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2502W is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 22m 5.8Afor most of the small power switching and load switch applications. Applications The QM2502W meet the RoHS and Green Product r
qm2402k.pdf
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QM2402K N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2402K is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 28m 4.8Afor most of the small power switching and load switch applications. Applications The QM2402K meet the RoHS and Green Product requi
qm2710d.pdf
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QM2710D N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2710D is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 28m 22Afor most of the small power switching and load switch applications. Applications The QM2710D meet the RoHS and Green Product require
qm2520c1.pdf
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QM2520C1 Dual N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2520C1 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 115m 1.4 Afor most of the small power switching and load switch applications. Applications The QM2520C1 meet the RoHS and Green Pro
qm2417c1.pdf
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QM2417C1 P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2417C1 is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 240m -1Afor most of the small power switching and load switch applications. Applications The QM2417C1 meet the RoHS and Green Product re
qm2401c1.pdf
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QM2401C1 P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2401C1 is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 65m -1.9Afor most of the small power switching and load switch applications. Applications The QM2401C1 meet the RoHS and Green Product r
qm2427s.pdf
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QM2427S P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2427S is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 9m -10.7Afor most of the synchronous buck converter applications . Applications The QM2427S meet the RoHS and Green Product requirement wi
qm2404d.pdf
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QM2404D N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2404D is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 20m 28Afor most of the small power switching and load switch applications. Applications The QM2404D meet the RoHS and Green Product require
qm2403j.pdf
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QM2403J P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2403J is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 55m -4.3Afor most of the small power switching and load switch applications. Applications The QM2403J meet the RoHS and Green Product requ
qm2401j.pdf
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QM2401J P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2401J is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 60m -4.2Afor most of the small power switching and load switch applications. Applications The QM2401J meet the RoHS and Green Product requ
qm2604v.pdf
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QM2604V N-Ch and P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2604V is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 50m 3.8Acharge for most of the small power switching and -20V 155 m -2.3Aload switch applications. The QM2604V meet the RoHS an
qm2415sm8.pdf
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QM2415SM8 P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2415SM8 is the highest performance trench P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate -20V 130m -3.3Acharge for most of the small power switching and load switch applications. Applications The QM2415SM8 meet the RoHS and Green Produ
qm2417y1.pdf
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QM2417Y1 P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2417Y1 is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 240m -1Afor most of the small power switching and load switch applications. Applications The QM2417Y1 meet the RoHS and Green Product re
qm2402j.pdf
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QM2402J N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2402J is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 25m 5.8Afor most of the small power switching and load switch applications. Applications The QM2402J meet the RoHS and Green Product requir
qm2411sn8.pdf
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QM2411SN8 P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2411SN8 is the highest performance trench P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate -20V 80m -3.2Acharge for most of the small power switching and load switch applications. Applications The QM2411SN8 meet the RoHS and Green Produc
qm2419k.pdf
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QM2419K P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2419K is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 205m -2.3Afor most of the small power switching and load switch applications. Applications The QM2419K meet the RoHS and Green Product req
qm2418y1.pdf
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QM2418Y1 N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2418Y1 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 90m 1.52Afor most of the small power switching and load switch applications. Applications The QM2418Y1 meet the RoHS and Green Product re
qm2517c1.pdf
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QM2517C1 Dual P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2517C1 is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 240m -1Afor most of the small power switching and load switch applications. Applications The QM2517C1 meet the RoHS and Green Produ
qm2416k.pdf
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QM2416K N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2416K is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 48m 3.5Afor most of the small power switching and load switch applications. Applications The QM2416K meet the RoHS and Green Product requir
qm2504w.pdf
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QM2504W Dual N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2504W is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 22m 5.8Afor most of the small power switching and load switch applications. Applications The QM2504W meet the RoHS and Green Product r
qm2606c1.pdf
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QM2606C1 N-Ch and P-Ch Fast Switching MOSFETsGeneral Description Product SummeryThe QM2606C1 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 90m 1.52Acharge for most of the small power switching and -20V 240m -1Aload switch applications. The QM2606C1 meet the RoHS and G
qm2502m9.pdf
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QM2502M9 Dual N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2502M9 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 18.5m 11Afor most of the small power switching and load switch applications. Applications The QM2502M9 meet the RoHS and Green Produ
qm2403c1.pdf
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QM2403C1 P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2403C1 is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 60m -2Afor most of the small power switching and load switch applications. Applications The QM2403C1 meet the RoHS and Green Product req
qm2410s.pdf
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QM2410S N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2410S is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 25m 6.2Afor most of the small power switching and load switch applications. Applications The QM2410S meet the RoHS and Green Product requi
qm2415k.pdf
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QM2415K P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2415K is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 125m -2.4Afor most of the small power switching and load switch applications. Applications The QM2415K meet the RoHS and Green Product req
qm2403k.pdf
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QM2403K P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2403K is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 55m -3.6Afor most of the small power switching and load switch applications. Applications The QM2403K meet the RoHS and Green Product requ
qm2410g.pdf
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QM2410G N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2410G is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 37m 5.1Afor most of the small power switching and load switch applications. Applications The QM2410G meet the RoHS and Green Product requi
qm2607c1.pdf
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QM2607C1 N-Ch and P-Ch Fast Switching MOSFETsGeneral Description Product SummeryThe QM2607C1 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 115m 1.3 Acharge for most of the small power switching and -20V 255m -0.94 Aload switch applications. The QM2607C1 meet the RoHS
qm2702d.pdf
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QM2702D N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2702D is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 20m 28Afor most of the small power switching and load switch applications. Applications The QM2702D meet the RoHS and Green Product require
qm2608n8.pdf
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QM2608N8 N-Ch and P-Ch Fast Switching MOSFETsGeneral Description Product SummeryThe QM2608N8 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 48m 3.8Acharge for most of the small power switching and -20V 70m -3.4Aload switch applications. The QM2608N8 meet the RoHS and G
qm2401g.pdf
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QM2401G P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2401G is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 60m -4.2Afor most of the small power switching and load switch applications. Applications The QM2401G meet the RoHS and Green Product requ
qm2414k.pdf
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QM2414K N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2414K is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 50m 3.6Afor most of the small power switching and load switch applications. Applications The QM2414K meet the RoHS and Green Product requi
qm2404v.pdf
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QM2404V N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2404V is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 28m 5.1Afor most of the small power switching and load switch applications. Applications The QM2404V meet the RoHS and Green Product requi
qm2410v.pdf
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QM2410V N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2410V is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 37m 4.5Afor most of the small power switching and load switch applications. Applications The QM2410V meet the RoHS and Green Product requir
qm2420k.pdf
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QM2420K N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2420K is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 85m 3 Afor most of the small power switching and load switch applications. Applications The QM2420K meet the RoHS and Green Product require
qm2506w.pdf
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QM2506W Dual N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2506W is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 28m 5Afor most of the small power switching and load switch applications. Applications The QM2506W meet the RoHS and Green Product req
qm2423v.pdf
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QM2423V P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2423V is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 40m -4.5Afor most of the small power switching and load switch applications. Applications The QM2423V meet the RoHS and Green Product requ
qm2402v.pdf
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QM2402V N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2402V is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 28m 5.1Afor most of the small power switching and load switch applications. Applications The QM2402V meet the RoHS and Green Product requir
qm2n7002e3k1.pdf
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QM2N7002E3K1 N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2N7002E3K1 is the highest performance trench N-CH MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 60V 3 180mAcharge for most of the small power switching and load switch applications. Applications The QM2N7002E3K1 meet the RoHS and Green
qm2411v.pdf
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QM2411V P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2411V is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 80m -3.2Afor most of the small power switching and load switch applications. Applications The QM2411V meet the RoHS and Green Product requ
m28s.pdf
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RUMW UMW M28SSOT-23 Plastic-Encapsulate TransistorsM28S TRANSISTOR (NPN) SOT23 FEATURES Excellent hFE Linearity High DC Current Gain MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 40 V CBO 3. COLLECTOR V Collector-Emitter Voltage 20 V CEOV Emitter-Base Voltage 6 V EBOI Col
wml28n50c4 wmk28n50c4 wmn28n50c4 wmm28n50c4 wmj28n50c4.pdf
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WML28N5 WM C4 50C4, MK28N50CWMN2 MJ28N50C28N50C4, WMM28N50C4, WM C4 500V 0.1 S TSuper Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C4 is ate ce.
wm03p41m2.pdf
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WM03P41M2 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30 V, I = -4.1A DS DR
wm02n75m2.pdf
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WM02N75M2 N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I =7.5A DS DR
wm10n35m2.pdf
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WM10N35M2 N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 3.5A DS DR
wml25n50c4 wmo25n50c4 wmk25n50c4 wmn25n50c4 wmm25n50c4 wmj25n50c4.pdf
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WML25N50C4, WMO25N5 WM C4 W 50C4, MK25N50CWMN2 MJ25N50C25N50C4, WMM25N50C4, WM C4 500V 0.125 S0 Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM
wml26n65c4 wmo26n65c4 wmk26n65c4 wmn26n65c4 wmm26n65c4 wmj26n65c4.pdf
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WML26N65C4, WMO26N6 WM C4 W 65C4, MK26N65CWMN2 MJ26N65C26N65C4, WMM26N65C4, WM C4 650V 0.16 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM
wml26n60c4 wmk26n60c4 wmn26n60c4 wmm26n60c4 wmo26n60c4 wmj26n60c4.pdf
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WML26N60C4, WMO26N6 WM C4 W 60C4, MK26N60CWMN2 MJ26N60C26N60C4, WMM26N60C4, WM C4 600V 0.16 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM
wm15p10m2.pdf
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WM15P10M2 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -150V, I = -1A DS DR
wml26n65f2 wmo26n65f2 wmk26n65f2 wmn26n65f2 wmm26n65f2 wmj26n65f2.pdf
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WML2 N65F2, WM F2 26N65F2, WMO26N MK26N65FWMN2 N65F2, WM F2 26N65F2, WMM26N MJ26N65F 650V 0.17 S TV Super Junction Power MOSFETDescripptionWMOSTM F2 is Wa 2nd generation super ayons junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f sS D D G GG S D G SJ-MOSFE while of an extremely fa
wml25n65em wmk25n65em wmn25n65em wmm25n65em wmj25n65em.pdf
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WML25N6 MK25N65EM W 65EM, WMWMN25 WMM25N6 MJ25N65EM 5N65EM, W 65EM, WM 650V 0.165 S0 Super Junction Power MOSFETDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is ate charge perf
wm02p56m2.pdf
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WM02P56M2 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20V, I = -5.6A DS DR
wm03n86m2.pdf
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WM03N86M2 N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30V, I = 8.6A DS DR
wm04p56m2.pdf
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WM04P56M2 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -40V, I = -5.6A DS DR
wml26n65sr wmk26n65sr wmn26n65sr wmm26n65sr wmj26n65sr.pdf
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WML26N6 MK26N65S65SR, WM SR WMN2 MJ26N65S26N65SR, WMM26N65SR, WM SR 650V 0.17 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM SR is Wa new generation super ayons w junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga charge performanc WMOSTM SR is
wml28n65f2 wmk28n65f2 wmn28n65f2 wmm28n65f2 wmj28n65f2.pdf
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WML28N65F2, WM F2 MK28N65FWMN2 N65F2, WM F2 28N65F2, WMM28N MJ28N65F 650V 0.15 S TV Super Junction Power MOSFETDescripptionWMOSTM F2 is Wa 2nd generation super ayons junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f sS D D G GG S D G SJ-MOSFE while of an extremely fa body ET fferin
wml26n60c4 wmo26n60c4 wmk26n60c4 wmn26n60c4 wmm26n60c4 wmj26n60c4.pdf
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WML26N60C4, WMO26N6 WM C4 W 60C4, MK26N60CWMN2 MJ26N60C26N60C4, WMM26N60C4, WM C4 600V 0.16 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM
wm02p60m2.pdf
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Document:W0803226, Rev: B WM02P60M2 2 P-Channel MOSFET Features V = -20 V, I = -6A DS DR
wmm220n20hg3.pdf
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WMM220N20HG3 200V N-Channel Enhancement Mode Power MOSFET DescriptionWMM220N20HG3 uses Wayon's 3nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This device Gis well suited for high efficiency fast s witching applications. S.TO-263Features V = 200V,
wm03p42m2.pdf
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WM03P42M2 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30V, I = -4.2A DS DR
wm03p56m2.pdf
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WM03P56M2 P-Channel Enhancement MOSFET Features Way-on Small Single MOSFETs V = -30 V, I = -5.6A DS DR
wm10p20m2.pdf
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WM10P20M2 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -100V, I = -2A DS DR
wml28n60c4 wmk28n60c4 wmn28n60c4 wmm28n60c4 wmj28n60c4.pdf
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WML28N6 WM C4 60C4, MK28N60CWMN2 MJ28N60C28N60C4, WMM28N60C4, WM C4 600V 0.13 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C4 is ate c
wml26n60f2 wmo26n60f2 wmk26n60f2 wmn26n60f2 wmm26n60f2 wmj26n60f2.pdf
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WML2 N60F2, WM F2 26N60F2, WMO26N MK26N60FWMN2 N60F2, WM F2 26N60F2, WMM26N MJ26N60F 600V 0.17 S TV Super Junction Power MOSFETDescripptionWMOSTM F2 is Wa 2nd generation super ayons junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f sS D D G GG S D G SJ-MOSFE while of an extremely fa
wml26n65c4 wmk26n65c4 wmn26n65c4 wmm26n65c4 wmo26n65c4 wmj26n65c4.pdf
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WML26N65C4, WMO26N6 WM C4 W 65C4, MK26N65CWMN2 MJ26N65C26N65C4, WMM26N65C4, WM C4 650V 0.16 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM
wml25n80m3 wmm25n80m3 wmn25n80m3 wmj25n80m3 wmk25n80m3.pdf
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WML25N8 MM25N80M80M3, WM M3 WMN2 80M3, WM M3 25N80M3, WMJ25N8 MK25N80M 800V 0.21 S TV Super Junction Power MOSFETDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga charge performanc WMOSTM
wmm240p10hg4.pdf
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WMM240P10HG4 100V P-Channel Enhancement Mode Power MOSFET DescriptionWMM240P10HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This GSdevice is well suited for high efficiency fast switching applications. TO-263Features V = -100V, I =
wml28n65c4 wmk28n65c4 wmn28n65c4 wmm28n65c4 wmj28n65c4.pdf
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WML28N6 WM C4 65C4, MK28N65CWMN2 MJ28N65C28N65C4, WMM28N65C4, WM C4 650V 0.13 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C4 is ate c
wm03n58m2.pdf
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WM03N58M2 N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30V, I = 5.8A DS DR
wml25n70em wmk25n70em wmn25n70em wmm25n70em wmj25n70em.pdf
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WML25N7 MK25N70EM W 70EM, WMWMN25 WMM25N7 MJ25N70EM 5N70EM, W 70EM, WM 700V 0.165 S0 Super Junction Power MOSFETDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is ate charge perf
wmn22n50c4 wmm22n50c4 wmj22n50c4 wmo22n50c4 wmk22n50c4 wml22n50c4.pdf
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WMN22N50C4, WMM22N MJ22N50CN50C4, WM C4 WMO22N50C4, WMK22N ML22N50CN50C4, WM C4 500V n Power MOSFETV 0.22 Super JunctionDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C4
wm03p60m2.pdf
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WM03P60M2 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30V, I = -6A DS DR
wml28n60f2 wmk28n60f2 wmn28n60f2 wmm28n60f2 wmj28n60f2.pdf
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WML28N60F2, WM F2 MK28N60FWMN2 N60F2, WM F2 28N60F2, WMM28N MJ28N60F 600V 0.15 S TV Super Junction Power MOSFETDescripptionWMOSTM F2 is Wa 2nd generation super ayons junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f sS D D G GG S D G SJ-MOSFE while of an extremely fa body ET fferin
atm2n65tf.pdf
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ATM2N65TF N-Channel Enhancement Mode Power MOSFET Drain-Source Voltage: 650V Continuous Drain Current: 2A DESCRIPTION The ATM2N65TF is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed sw
atm2601psg.pdf
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ATM2601PSG P-Channel Enhancement Mode Power MOSFET Drain-Source Voltage -20V Continuous Drain Current -2.8A FEATURES SOT23-6 VDS = -20V,ID = -2.8A R
atm2312nsa.pdf
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ATM2312NSA N-CHANNEL ENHANCEMENT MODE POWER MOSFETDrain-Source Voltage: 20V Continuous Drain Current: 5.0A FEATURES SOT-23 Small PackageSOT-23 V =20V, I =5ADS DR 31.8m@V =4.5VDS(ON) GSR 35.6m@V =2.5VDS(ON) GS Advanced Trench TechnologyAPPLICATIONS D Load Switching for portable Application3 DC/DC Converter1 2 G SSchematic d
atm2n65te.pdf
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ATM2N65TE N-Channel Enhancement Mode Power MOSFET Drain-Source Voltage: 650V Continuous Drain Current: 2A DESCRIPTION The ATM2N65TE is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed sw
atm2302bnsa.pdf
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ATM2302BNSAN-Channel Enhancement Mode Field Effect TransistorDrain-Source Voltage: 20V Drain Current: 3AFeatures Trench Power LV MOSFET technology High power and current handing capabilityR
atm2301psa.pdf
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ATM2301PSAP-Channel Enhancement Mode Field Effect TransistorDrain-Source Voltage: -20V Drain Current: -2.5AFeatures Trench FET Power MOSFET Excellent R and Low Gate ChargeDS(on)R
atm2306nsa.pdf
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ATM2306NSAN-Channel Enhancement Mode Field Effect TransistorDrain-Source Voltage: 30V Drain Current: 3.16ADESCRIPTIONThe ATM2306NSA uses advanced trench technologyto provide excellent RDS(on) with low gate charge.This device is suitable for use as a load switch orDC/DC converter .FEATURESV =30V 1Gate 2Source 3DrainDS(V)SOT-23 Plastic PackageI =3.16ADR )47m@10V
asdm20p09zb.pdf
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ASDM20P09ZB-20V P-Channel MOSFETProduct SummaryGeneral Features R
asdm20n12zb.pdf
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ASDM20N12ZB20V N-CHANNEL MOSFETProduct SummaryFeatures 20V/12AV DS 20 V Super High Dense Cell DesignR DS(on),Typ@ VGS=4.5 V 11.5 m Reliable and RuggedI D 12 A Lead Free Available (RoHS Compliant)Applications Portable Equipment and Battery Powered Systems. DC-DC converter Load Switch Top viewDGSSOT-23-3Absolute Maximum Ratings (TA=25C Unless O
asdm2301za.pdf
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ASDM2301ZA20V P-CHANNEL MOSFET FeaturesProduct Summary High Power and current handing capabilityVDSS RDS(ON) RDS(ON) ID Lead free product is acquired(Typ) (Typ) @-4.5V @-2.5V Surface Mount Package-20V65m 83m -3AApplication PWM applicationsLoad switchPower managementtop viewDGSOT-23 Absolute Maximum Ratings (TA=25unless other
bm2300.pdf
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BM2300MOSFET ROHSN-Channel MOSFET SOT-23-FeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-Resistance Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified.)Parameter Symbol Limit UnitDrain-Source Voltage V 20 DSV Gate-Source Voltage V 12 GSContinuous Drain Cur
fdm20r120an4g.pdf
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FDM20R120AN4GSilicon Carbide Power MOSFET 1200V, 100A, 20mGeneral DescriptionThis product family offers state of the art performance. It is designed for high frequency applications here highefficiency and high reliability are required.Features High Blocking Voltag High Frequency Operation Low on-resistance Fast intrinsic diode with low reverserecoveryApplicat
hsm2627.pdf
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HSM2627 P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSM2627 is the high cell density trenched VDS -20 V P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the RDS(ON),max 9 m synchronous buck converter applications. ID -10.7 A The HSM2627 meet the RoHS and Green Product requirement with full function reliability approved. l
hsm20n02.pdf
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HSM20N02 N-Ch 20V Fast Switching MOSFETs Description Product Summary V 20 V DSThe HSM20N02 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and R 2.9 m DS(ON),typgate charge for most of the synchronous buck converter applications. I 20 A DThe HSM20N02 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function
hsm2202.pdf
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HSM2202 Dual N-Ch 20V Fast Switching MOSFETs Description Product Summary The HSM2202 is the high cell density trenched N-V 20 V DSch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 9.5 m DS(ON),TYPconverter applications. I 8 A DThe HSM2202 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full functi
hsm2903.pdf
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HSM2903 N-Ch and P-Ch Fast Switching MOSFETs Description Product Summary The HSM2903 is the high performance BVDSS RDSON ID complementary N-ch and P-ch MOSFETs with 20V 14m 10A high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck -20V 45m -6.5A converter applications. The HSM2903 meet the RoHS and Green Product requireme
hsm24p03.pdf
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HSM24P03 P-Ch 30V Fast Switching MOSFETs Description Product Summary The HSM24P03 is the high cell density trenched P- V -30 V DSch MOSFETs, which provide excellent RDSON and R 3.8 m DS(ON),typgate charge for most of the synchronous buck converter applications. I -24 A DThe HSM24P03 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full functi
jsm2302.pdf
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JSM2302/Features 1 2 /Applications DC-DC /Absolute maximum ratings(Ta=25) /Parameter / Symbol /Value /Unit -/Drain-Source Voltage V 20 V DS-/Gate-Source Voltage V 12 V GS/C
jsm2301s.pdf
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JSM2301S/Features 1 2 /Applications /Absolute maximum ratings(Ta=25) /Parameter / Symbol /Value /Unit -/Drain-Source Voltage V -20 V DS-/Gate-Source Voltage V 8 V GS/C
lpm2301b3f.pdf
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Preliminary Datasheet LPM2301 LPM2301 -20V/-2A P-Channel Enhancement Mode Field Effect Transistor General Description Features -20V/-2.0A,RDS(ON)=170m(typ.)@VGS=-2.5V The LPM2301 is the P-channel logic enhancement -20V/-2.0A,RDS(ON)=130m(typ.)@VGS=-4.5V mode power field effect transistors are produced Super high density cell design for extremely low using high
lpm2302b3f.pdf
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Preliminary Datasheet LPM2302 LPM2302 20V/3.5A N-Channel Enhancement Mode Field Effect Transistor General Description Features The LPM2302 is N-channel logic enhancement mode 20V/3.5A, RDS(ON)=50m(Typ.)@VGS=4.5V power field effect transistor, which are produced by 20V/3.0A, R =75m(Typ.)@V =2.5V DS(ON) GSusing high cell density, DMOS trench technology. Sup
wpm2341-ms.pdf
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www.msksemi.comWPM2341-MSSemiconductor CompianceAPPLICATION Load Switch for Portable Devices DC/DC ConverterFEATURE TrenchFET Power MOSFETIV(BR)DSS RDS(on)MAX D90 m@-4.5V-20 V-3 A110 m@-2.5V1. GATE2. SOURCE3. DRAINSOT-23-3LMaximum ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitDrain-Source Voltage V -20DSVGate-Sour
wpm2015-ms.pdf
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www.msksemi.comWPM2015-MSSemiconductorCompianceAPPLICATION Load Switch for Portable Devices DC/DC ConverterFEATURETrenchFET Power MOSFETIV(BR)DSS RDS(on)MAX D90 m@-4.5V-20 V-3 A110 m@-2.5V1. GATE2. SOURCE3. DRAINSOT-23-3LMaximum ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitDrain-Source Voltage V -20DSVGate-So
mem2303xg-n.pdf
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MEM2303 P-Channel MOSFET MEM2303XG-N General Description Features MEM2303XG-N Series P-channel enhancement -30V/-2.9A mode field-effect transistor , These miniature surface RDS(ON), Vgs@-10V, Ids@-2.9A = 92m mount MOSFETs utilize High Cell Density process. RDS(ON), Vgs@-4.5V, Ids@-1.9A = 115m Low RDS(ON) assures minimal power loss and High Density Cell Design For Ultra
mem2306s.pdf
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MEM2306 N-Channel MOSFET MEM2306 General Description Features MEM2306SG Series Dual N-channel enhancement 20V/5A mode field-effect transistor produced with high cell RDS(ON) =29m@ VGS=3.85V,ID=5A density DMOS trench technology, which is especially High Density Cell Design For Ultra Low On-Resistance used to minimize on-state resistance. This device surface mount pa
mem2307xg.pdf
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MEM2307XG P-Channel MOSFET MEM2307XG General Description Features MEM2307XG Series P-channel enhancement -30V/-4.1A mode field-effect transistor ,produced with high cell RDS(ON)88m@ VGS=-10V,ID=-4.1A density DMOS trench technology, which is especially RDS(ON)108m@ VGS=-4.5V,ID=-3A used to minimize on-state resistance. This device High Density Cell Design For Ultra
mem2313.pdf
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MEM2313 P-Channel MOSFET MEM2313 General Description Features MEM2313SG Series Dual P-channel -30V/-6A enhancement mode field-effect transistor, RDS(ON) =52m@ VGS=-10V,ID=-6A RDS(ON) =67m@ VGS=-4.5V,ID=-4A produced with high cell density DMOS trench technology, which is especially used to minimize High Density Cell Design For Ultra Low On-Resistance Surface mo
mem2303m3.pdf
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MEM2303 P-Channel MOSFET MEM2303M3 General Description Features MEM2303M3G Series P-channel enhancement mode -30V/-4.2A field-effect transistor ,produced with high cell density RDS(ON) =55m@ VGS=-10V,ID=-4.2A DMOS trench technology, which is especially used to RDS(ON) =62m@ VGS=-4.5V,ID=-4A minimize on-state resistance. This device particularly RDS(ON) =72m@ VGS=-2.5V,ID=-2.5
mem2301xg-n.pdf
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MEM2301XG-N P-Channel MOSFET MEM2301XG-N General Description Features MEM2301XG-N Series P-channel enhancement -20V/-2.8A mode field-effect transistor , These miniature surface RDS(ON), Vgs@-1.8V, Ids@-1.1A = 230m mount MOSFETs utilize High Cell Density process. RDS(ON), Vgs@-2.5V, Ids@-2.0A = 140m Low RDS(ON) assures minimal power loss and RDS(ON), Vgs@-4.5V, Ids@-3.1A = 9
mem2310m3.pdf
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MEM2310 N-Channel MOSFET MEM2310M3 General Description Features MEM2310M3G Series N-channel enhancement mode 30V/5.8A field-effect transistor ,produced with high cell density RDS(ON) =25m@ VGS=10V, ID=5.8A DMOS trench technology, which is especially used to RDS(ON) =28m@ VGS=4.5V, ID=5A minimize on-state resistance. This device particularly RDS(ON) =37m@ VGS=2.5V, ID=4A
mem2302x.pdf
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MEM2302 N-Channel MOSFET MEM2302X General Description Features MEM2302XG Series N-channel enhancement mode 20V/3A field-effect transistor ,produced with high cell density RDS(ON) =29m@ VGS=4.5V, ID=3A DMOS trench technology, which is especially used to RDS(ON) =36m@ VGS=2.5V, ID=2A minimize on-state resistance. This device particularly High Density Cell Design For Ultra
mem2307m3g.pdf
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MEM2307M3G P-Channel MOSFET MEM2307M3G General Description Features MEM2307M3G Series P-channel enhancement -30V/-4.1A mode field-effect transistor ,produced with high cell RDS(ON)88m@ VGS=-10V,ID=-4.1A density DMOS trench technology, which is especially RDS(ON)108m@ VGS=-4.5V,ID=-3A used to minimize on-state resistance. This device High Density Cell Design For Ultra Low
mem2301x.pdf
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MEM2301 P-Channel MOSFET MEM2301X General Description Features MEM2301XG Series P-channel enhancement mode -20V/-2.8A field-effect transistor ,produced with high cell density RDS(ON) =93m@ VGS=-4.5V,ID=-2.8A DMOS trench technology, which is especially used to RDS(ON) =113m@ VGS=-2.5V,ID=-2A minimize on-state resistance. This device particularly High Density Cell Design
mem2302xg-n.pdf
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MEM2302XG-N N-Channel MOSFET MEM2302XG-N General Description Features MEM2302XG-N Series N-channel enhancement 20V/3A mode field-effect transistor These miniature surface RDS(ON), Vgs@2.5V, Ids@2.8A = 42m mount MOSFETs utilize High Cell Density process. RDS(ON), Vgs@4.5V, Ids@3A =35m Low RDS(ON) assures minimal power loss and High Density Cell Design For Ultra L
mem2309s.pdf
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MEM2309 P-Channel MOSFET MEM2309S Description Feature -30V/-6A MEM2309SG Series P-channel enhancement RDS(ON) =53m@ VGS=-10V,ID=-6A mode field-effect transistor ,produced with high RDS(ON) =68m@ VGS=-4.5V,ID=-4A cell density DMOS trench technology, which is High Density Cell Design For Ultra Low especially used to minimize on-state On-Resistance resist
mem2302m3.pdf
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MEM2302N-Channel MOSFET MEM2302M3General Description FeaturesMEM2302M3G Series N-channel enhancement mode 20V/3Afield-effect transistor ,produced with high cell density RDS(ON) =29m@ VGS=4.5V, ID=3ADMOS trench technology, which is especially used to RDS(ON) =36m@ VGS=2.5V, ID=2Aminimize on-state resistance. This device particularly High Density Cell Design For Ultra Low
mem2310x.pdf
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MEM2310 N-Channel MOSFET MEM2310X General Description Features MEM2310XG Series N-channel enhancement mode 30V/5.8A field-effect transistor ,produced with high cell density RDS(ON) =25m@ VGS=10V, ID=5.8A DMOS trench technology, which is especially used to RDS(ON) =28m@ VGS=4.5V, ID=5A minimize on-state resistance. This device particularly RDS(ON) =37m@ VGS=2.5V, ID=4A s
mem2402.pdf
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MEM2402 N-CHANNEL Trench Power MOSFET MEM2402 General Description Features The MEM2402 combines advanced trench VDS=60VID=15A MOSFET technology with a low resistance package to RDS(ON)
pjm2301psa-s.pdf
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PJM2301PSA-S P- Enhancement Mode Field Effect Transistor Features SOT-23 VDS= -20V I = -2AD R =120m (typ) @ V =-2.5VDS(ON) GSR =88m (typ) @ V =-4.5VDS(ON) GS High power and current handing capability Halogen and Antimony Free Surface mount package1. Gate 2.Source 3.DrainMarking : S01Drain 3 Applications Battery protection Load s
pjm2305psa.pdf
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PJM2305PSAP-Channel Power MOSFETSOT-23Features Fast switching Low gate charge and RDS(ON) Low reverse transfer capacitances1. Gate 2.Source 3.Drain Marking: S5Application Schematic Diagram Load switch and in PWM applicatopnsDrain3 Power management1GateSource2Absolute Maximum Ratings Ratings at TA =25 unless otherwise specified.Paramete
pjm2300nsa-l.pdf
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PJM2300NSA-L N-Channel Enhancement Mode Power MOSFETFeatures SOT-23 Excellent R and Low Gate ChargeDS(ON) VDS= 20V I = 5.5A DR
pjm2309psc.pdf
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PJM2309PSCP-Channel Power MOSFETSOT-23-3 Features VDS= -60V I = -4AD RDS(ON)= 180m(max) @-10V2 Halogen and Antimony Free31Applications1. Gate 2.Source 3.Drain Load Switch and in PWM ApplicationsMarking: Q9 Power ManagementSchematic DiagramDrain31GateSource2Absolute Maximum Ratings Ratings at TA =25 unless otherwise specified.
pjm2302nsa.pdf
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PJM2302NSAN- Enhancement Mode Field Effect TransistorSOT-23 Features Fast Switching Low Gate Charge and RDS(on) High power and current handing capabilityApplications Battery protection1. Gate 2.Source 3.DrainMarking: M22 Load switch Power managementSchematic diagram3Drain1Gate2SourceAbsolute Maximum Ratings Ratings at TC = 25 unless
pjm2301psa.pdf
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PJM2301PSAP- Enhancement Mode Field Effect TransistorFeatures High power and current handing capabilitySOT-23 Halogen free product is acquired Surface mount package1. Gate 2.Source 3.DrainApplications Marking: M01 Battery protection Schematic Diagram Load switchDrain3 Power management1GateSource2Absolute Maximum Ratings Ratings at TA =25
pjm2302nsa-s.pdf
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PJM2302NSA-SN- Enhancement Mode Field Effect TransistorSOT-23 Features Fast Switching Low Gate Charge and RDS(on) High power and current handing capabilityApplications Battery protection1. Gate 2.Source 3.DrainMarking: 22S Load switch Power managementSchematic diagram3Drain1Gate2SourceAbsolute Maximum Ratings Ratings at TC = 25 unle
pjm2319psa.pdf
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PJM2319PSA P-Enhancement Field Effect TransistorSOT-23Features Fast Switching Ultra Low Qgd RDS(on) 80 m @V= -10VGS1. Gate 2.Source 3.DrainMarking: S19Application Schematic Diagram Load SwitchDrain DC/DC Converter31GateSource2Absolute Maximum Ratings Ratings at TA =25 unless otherwise specified.Parameter Symbol Value Unit D
pjm2309psa.pdf
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PJM2309PSAP-Channel Power MOSFETSOT-23Features VDS= -60V I = -2.0AD RDS(ON)= 200m(max) @-10V Halogen and Antimony Free1. Gate 2.Source 3.DrainApplicationsMarking: S9 Load Switch and in PWM ApplicationsSchematic Diagram Power Management Drain31GateSource2Absolute Maximum Ratings Ratings at TA =25 unless otherwise specified.Parameter
pjm2300nsa.pdf
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PJM2300NSA N-Channel MOSFETFeature SOT-23 TrenchFET Power MOSFET Excellent R and Low Gate ChargeDS(on)Applications 1. Gate 2.Source 3.Drain Load Switch for Portable DevicesMarking: M02 DC/DC ConverterSchematic diagram3Drain1Gate2SourceAbsolute Maximum Ratings Ratings at TA =25 unless otherwise specified. Parameter Symbol Maximum Units
apm2324a.pdf
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APM2324AN-Channel Enhancement Mode MOSFETChannel Enhancement Mode MOSFET Feature 20V/3A, RDS(ON) = 80m(MAX) @VGS = 4.5V. = 4.5V. RDS(ON) = 90m(MAX) @VGS = 2.5V. = 2.5V. Super High dense cell design for extremely low RSuper High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SC-59 for Surface Mount Package. Applications Power
apm2301aac.pdf
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APM2301AACP-Channel Enhancement Mode MOSFET Feature DS(ON) GS -20V/-3A R = 120m(MAX) @V = -4.5V. DS(ON) GS R = 150m(MAX) @V = -2.5V. DS(ON) Super High dense cell design for extremely low R Reliable and Rugged SC-59 for Surface Mount Package SC-59 Applications Power Management Portable Equipment and Battery Powered Systems. AT =25 U
wtm2302.pdf
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WTM2302N-Channel Enhancement Mode Power MOSFETDescription The WTM2302 uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as abattery protection or in other switching application.Features V DS = 20V, lD = 2.6AR
wtm2300.pdf
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WTM2300N-Channel Enhancement Mode Power MOSFETDescription The WTM2300 uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as abattery protection or in other switching application.Features V DS = 20V, lD = 6AR
wtm2306.pdf
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WTM2306N-Channel Enhancement Mode Power MOSFETDescription The WTM2306 uses advanced trench technology to provideexcellent R , This device is suitable for use as aDS(ON)battery protection or in other switching application.Features V DS = 30V, lD = 3.6AR
wtm2301.pdf
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WTM2301P-Channel Enhancement Mode Power MOSFET Description The WTM2301 uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as abattery protection or in other switching application.Features V DS = -20V, lD = -3AR
wtm2305.pdf
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WTM2305P-Channel Enhancement Mode Power MOSFET Description The WTM2305 uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as abattery protection or in other switching application.Features V DS = -20V, lD = -4.1AR
hgm230n10al.pdf
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HGM230N10AL P-1100V N-Ch Power MOSFETFeature 100 VVDS High Speed Power Switching, Logic Level 21.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 28RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 20 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS
htm200n03.pdf
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HTM200N03 P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level15.5RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness12 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit DrainDFN3x3 DC/DC in Telecoms and InductrialGateSrcPart Number P
hgm290n10sl.pdf
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HGM290N10SL P-1100V N-Ch Power MOSFETFeature 100 VVDS High Speed Power Switching, Logic Level 22.0RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 26RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 21 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS
htm200p03.pdf
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HTM200P03 P-130V P-Ch Power MOSFETFeature-30 VVDS High Speed Power Switching, Logic Level17.5RDS(on),typ VGS=-10V m Enhanced Avalanche Ruggedness26RDS(on),typ VGS=-4.5V m 100% UIS Tested, 100% Rg Tested-18 AID (Sillicon Limited) Lead Free, Halogen FreeDrainApplication Hard Switching and High Speed CircuitDFN3x3 DC/DC in Telecoms and
hgm210n12sl.pdf
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HGM210N12SLP-1120V N-Ch Power MOSFETFeature 120 VVDS High Speed Power Switching, Logic Level 20RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 25RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 29 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 26 A Lead Free, Halogen Free ID (Package Limited)Application Synchronou
sm2301.pdf
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SM2301P-Channel Enhancement-Mode MOSFETFeatures 1Advanced Trench Process Technology. 2High Density Cell Design for Ultra Low On-Resistance. 3Improved Shoot-Through FOM 4RoHS Compliant PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max100 @ VGS = -4.5V, ID=-2.8A 150 @ VGS = -2.5V, ID=-2.0A -20V -2.8A 170 @ VGS = -1.8V, ID=-2.0A SM2301 Pin Assignment &
sm2312srl.pdf
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SM2312SRL20V /6A Single N Power MOSFET B N02B N 20V /6A Single N Power MOSFET 6N02BGeneral Description 20 VV DS20V /6A Single N Power MOSFET 18.9 mRDS(on),TYP@VGS=10VVery low on-resistance RDS(on) @ VGS=4.5 V 42.0 mRDS(on),TYP@VGS=4.5Pb-free lead plating; RoHS compliant 6 AIDTape and reelPart ID Package Type Markinginfomation100% UIS Tested100% Rg TestedSM231
sm2305.pdf
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SM2305P-Channel Enhancement-Mode MOSFET (-20V, -4. 5A) PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 53 @ VGS = -10V,ID=-4.5A 60 @ VGS = -4.5V,ID=-4.2A -20V -4.5A 100 @ VGS = -2.5V,ID=-2.0A Features 1 Super high dense cell trench design for low RDS(on). 2 Rugged and reliable. 3 SOT-23 package 4 RoHS Compliant. SM2305 Pin Assignment & Symbol
sm2314.pdf
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SM2314N-Channel High Density Trench MOSFET (20V, 5.4A) Pb PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 30 @ VGS = 4.0V, ID=5.4A30 @ VGS = 4.0V, ID=5.4A 30 @ VGS = 4.0V, ID=5.4A 30 @ VGS = 4.0V, ID=5.4A20V 5.4A 40 @ VGS = 2.5V, ID=4.3A40 @ VGS = 2.5V, ID=4.3A 40 @ VGS = 2.5V, ID=4.3A40 @ VGS = 2.5V, ID=4.3AFeatures 1 Advanced Trench Process Technology.
sm2302.pdf
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SM2302N-Channel Enhancement-Mode MOSFET(20V, 2.8A)Pb PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 60 @ VGS = 4.5V, ID=2.8A 20V 2.8A 115 @ VGS = 2.5V, ID=2.0A 130 @ VGS = 1.8V, ID=2.0A Features 1 Advanced Trench Process Technology. 2 High Density Cell Design for Ultra Low On-Resistance. 3 Fully Characterized Avalanche Voltage and Current. 4 Improved Shoot
sm2306.pdf
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SM2306N-Channel High Density Trench MOSFET Features1 Advanced Trench Process Technology. 2 High Density Cell Design for Ultra Low On-Resistance. 3 RoHS Compliant. PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 37 @ VGS = 10V, ID=4.0A 30V 4.0A 49 @ VGS = 4.5V, ID=3.5A SM2306 Pin Assignment & Symbol Ordering Information Ordering Number Pin Ass
sm2300nsac.pdf
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SM2300NSACwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/D
apm2305ac.pdf
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APM2305ACwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-2
wpm2341a-3-tr.pdf
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WPM2341A-3/TRwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLIC
mem2301.pdf
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MEM2301www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS
apm2300cac.pdf
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APM2300CACwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/D
qm2423k.pdf
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QM2423Kwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS
am2319p-t1.pdf
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AM2319P-T1www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-
im2132.pdf
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IM2132www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS
qm2409k.pdf
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QM2409Kwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS
tsm2314cx.pdf
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TSM2314CXwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC
apm2054ndc.pdf
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APM2054NDCwww.VBsemi.tw N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.022 at VGS = 4.5 V 6.8RoHS30 10 nC COMPLIANTAPPLICATIONS0.027 at VGS = 2.5 V 6.0 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwis
am2305pe.pdf
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AM2305PEwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23
am2336n-t1.pdf
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AM2336N-T1www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)
apm2323aac.pdf
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APM2323AACwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS
vbm2610n.pdf
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VBM2610Nwww.VBsemi.comP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY VDS (V) RDS(on) () TrenchFET Power MOSFETID (A) Qg (Typ) 100 % UIS Tested0.062 at VGS = - 10 V - 20- 60 12.50.074 at VGS = - 4.5 V - 15 APPLICATIONS Load SwitchSTO-220ABGDG D STop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter
tsm2312cx.pdf
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TSM2312CXwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC
apm2321ac.pdf
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APM2321ACwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIO
cem2163.pdf
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CEM2163www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definitiona0.015 at VGS = - 4.5 V TrenchFET Power MOSFET- 13a 100 % Rg Tested0.026 at VGS = - 2.5 V - 20 20 nC- 10 Built in ESD Protection with Zener Diode0.065 at VGS = - 1.8 V - 8 Typical E
stf6n60m2.pdf
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STF6N60M2www.VBsemi.twN hannel 650 D S Power MOSFETFEATURESPRODUCT SUMMARYVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 1.1 Reduced switching and conduction lossesQg max. (nC) 25 Ultra low gate charge (Qg)Qgs (nC) 2.0 Avalanche energy rated (UIS)Qgd (nC) 2.7Configuratio
vbzm20n10.pdf
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VBZM20N10www.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.017 at VGS = 10 V10070aCOMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersTO-220AB DGG D SSTop ViewN-Channel MOSFETABSOLUTE
vbm2102m.pdf
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VBM2102Mwww.VBsemi.comP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.167 at VGS = - 10 V- 18- 100 37 100 % Rg and UIS Tested0.180 at VGS = - 4.5 V - 14 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-220AB Power Switc
apm2701acc-trg.pdf
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APM2701ACC-TRGwww.VBsemi.twN- and P-Channel 2 V (D-S) MOSFET0 FEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFETN-Channel 200.036 at VGS = 4.5 V 4.2 100 % Rg Tested0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/ECP-Channel - 200.08
apm2308ac.pdf
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APM2308ACwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)
hm2310pr.pdf
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HM2310PRwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 4.5 V 7.1RoHS29 nC COMPLIANT60APPLICATIONS0.088 at VGS = 10 V 6.7 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise n
ssm2307g.pdf
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SSM2307Gwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATION
sm2054nsd.pdf
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SM2054NSDwww.VBsemi.tw N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.022 at VGS = 4.5 V 6.8RoHS30 10 nC COMPLIANTAPPLICATIONS0.027 at VGS = 2.5 V 6.0 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise
sgm2306a.pdf
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SGM2306Awww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.022 at VGS = 4.5 V 6.8RoHS30 10 nC COMPLIANTAPPLICATIONS0.027 at VGS = 2.5 V 6.0 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise n
apm2301ac.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
APM2301ACwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIO
wnm2016-3.pdf
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WNM2016-3www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC
vbzm20p06.pdf
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VBZM20P06www.VBsemi.comP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARY FEATURES-60VDS V TrenchFET Power MOSFETRDS(on) VGS = 10 V 100 % UIS Tested62 mRDS(on) VGS = 4.5 V 74 mAPPLICATIONSID -40A Load SwitchConfiguration SingleSTO-220ABGDG D STop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Sy
am20p06-135.pdf
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AM20P06-135www.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter S
irlm2502tr.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
IRLM2502TRwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Con
sm2323psa.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SM2323PSAwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-2
sm2312nsa.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SM2312NSAwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)
hm2310.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
HM2310www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23)G 1
wnm2020-3.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
WNM2020-3www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC
mem2302.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
MEM2302www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Conver
apm2321aac.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
APM2321AACwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATI
vbm2658.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
VBM2658www.VBsemi.comP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.0600 at VGS = - 10 V- 30- 60 67 100 % Rg and UIS Tested0.0850 at VGS = - 4.5 V - 24 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSSTO-220AB Power Swi
vbm2309.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
VBM2309www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.0092 at VGS = - 10 V - 60 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.0128 at VGS = - 4.5 V - 55APPLICATIONS Load SwitchTO-220AB Notebook Adaptor SwitchS G G D STop View
qm2416k.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
QM2416Kwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Conver
hm25p06k.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
HM25P06Kwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ)Definition0.053 at VGS = - 10 V - 25 TrenchFET Power MOSFET- 60 260.062 at VGS = - 4.5 V - 20 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS High Side Switch for Full Bridge Con
am20n10-250d.pdf
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AM20N10-250Dwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATI
apm2309ac.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
APM2309ACwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-2
am2358n-t1.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
AM2358N-T1www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23)G
apm2701ac.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
APM2701ACwww.VBsemi.twN- and P-Channel 2 V (D-S) MOSFET0 FEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFETN-Channel 200.036 at VGS = 4.5 V 4.2 100 % Rg Tested0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/ECP-Channel - 200.083 at
hm2301kr.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
HM2301KRwww.VBsemi.twP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)c Qg (Typ.)Definition0.080 at VGS = - 4.5 V - 3.1 TrenchFET Power MOSFET4.3 nC- 200.100 at VGS = - 2.5 V - 2.3 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch DC/DC Convert
hm2305pr.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
HM2305PRwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.050 at VGS = - 10 V - 7.6 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.056 at VGS = - 4.5 V - 6.0APPLICATIONS Load Switch Battery SwitchDS G G D SD P-Channel MOSFET ABS
wpm2015-3-tr.pdf
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WPM2015-3/TRwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICA
am2339p-t1.pdf
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AM2339P-T1www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS
am20n10-130d.pdf
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AM20N10-130Dwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATI
am2302n.pdf
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AM2302Nwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Conver
vbm2625.pdf
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VBM2625www.VBsemi.comP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.019 at VGS = - 10 V - 53APPLICATIONS- 60 38 nC0.026 at VGS = - 4.5 V - 42 Load SwitchTO-220ABSGDG D SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Par
apm2303ac.pdf
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APM2303ACwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-2
apm2315ac.pdf
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APM2315ACwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-2
am2340ne-t1.pdf
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AM2340NE-T1www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)
hm2300.pdf
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HM2300www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Convert
am2321p.pdf
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AM2321Pwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS
am2358ne.pdf
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AM2358NEwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23)G 1
apm2314ac.pdf
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APM2314ACwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC
wnm2021.pdf
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WNM2021www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.036 at VGS = 10 V 4 TrenchFET Power MOSFET20 0.040 at VGS = 4.5 V 3.8 4 nC Typical ESD Protection 2000 V HBM0.048 at VGS = 2.5 V 3.6 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECA
apm2317ac.pdf
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APM2317ACwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIO
sm2a18nsv.pdf
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SM2A18NSVwww.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Available in tape and reelVDS (V) 200 Dynamic dV/dt ratingRDS(on) ()VGS = 10 V 1.2 Repetitive avalanche ratedQg (Max.) (nC) 8.2 Fast switchingQgs (nC) 1.8 Ease of parallelingAvailableQgd (nC) 4.5 Simple drive requirementsConfiguration SingleDSOT-223DGSDG
tpm2601c3.pdf
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TPM26 01 C3P-Channel Enhancement-Mode MOS FETswww.sot23.com.twFeaturesApplications (typ) @VGS =4.5V. -20V, -2.3A, RDS(ON) =100m Battery protection RDS(ON) = 125m (typ) @VGS = 2.5V. Load switch Power management SOT-323 package. Ordering InformationPart Number Qty per Reel Reel SizeTPM2601C3 3000 7DSGSOT-323Absolute Maximum Ratings (TA=25C unle
tpm2008p3.pdf
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TPM2008 P3N-Channel Enhancement Mode MOSFET WWW.SOT23.COM.TWApplication Features Load/Power Switching Surface Mount Package Interfacing Switching N-Channel Switch with Low RDS(on) Battery Management for Ultra Small Portable Operated at Low Logic Level Gate Drive Electronics ESD Protected Logic Level Shift Package and Pin Configuration Circuit diagram Circ
tpm2077.pdf
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tpm2030-3.pdf
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TPM2030-3N-Channel Mosfetwww.sot23.com.twProduct SummaryApplication RDS(on)=Typ 200m@VGS= 4.5V Load/Power switch RDS(on)=Typ 250m@VGS= 2.5V Interfacing, logic switching Lead free product is acquired Battery management for ultra protable electronics Surface mount package N-channel switch with low RDS(on) Operated at low logic le
tpm2019-3.pdf
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TPM2019-3www.techpublic.com.twwww.techpublic.com.twwww.techpublic.com.twwww.techpublic.comtw.TPM2019-3www.techpublic.com.twwww.techpublic.com.twwww.techpublic.com.tw www.techpublic.com.tw www.techpublic.com.twwww.techpublic.com.twwww.techpublic.com.twwww.techpublic.com.twwww.techpublic.com.twwww.techpublic.com.twwww.techpublic.com.twwww.techpublic.com.twwww.te
tpm2101bc3.pdf
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TPM21 01 B C3P-Channel Enhancement-Mode MOS FETswww.sot23.com.twFeaturesApplications V -20V DSBattery protection I -2.0A DLoad switch R ( at V =-4.5V) 130 mohm DS(ON) GSPower management R ( at V =-2.5V) 170 mohm DS(ON) GS R ( at V =-1.8V) 250 mohm DS(ON) GSDSGSOT323Absolute Maximum Ratings (TA=25C unless otherwise
tpm2102bc3.pdf
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TPM21 02B C3N-Channel Enhancement-Mode MOS FETswww.sot23.com.twFeaturesApplications V 20V DSBattery protection I 2.5A DLoad switch R ( at V =4.5V) 70 mohm DS(ON) GSPower management R ( at V =2.5V) 98 mohm DS(ON) GSDDSG GSOT323SAbsolute Maximum Ratings (TA=25C unless otherwise specified) Parameter Symbol Limit UnitDr
tpm2008ep3-a.pdf
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TPM2008 EP3-AN-Channel Enhancement Mode MOSFET WWW.SOT23.COM.TWApplication Features Load/Power Switching Surface Mount Packagewww.sot23.com.tw Interfacing Switching N-Channel Switch with Low RDS(on) Battery Management for Ultra Small Portable Operated at Low Logic Level Gate Drive www.sot23.com.twElectronics ESD Protectedwww.sot23.com.tw Logic Level Shift
hm2n15r.pdf
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HM2N15RN-Channel Enhancement Mode Power MOSFET Description DThe HM2N15R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features VDS = 150V,ID = 2A Schematic diagram RDS(ON)
hm2301a.pdf
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HM2301A P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram VDS = -20V,ID = -3A RDS(ON)
hm25p15d.pdf
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HM25P15DP-Channel Enhancement Mode Power MOSFET Description The HM25P15D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-150V,ID =-25A Schematic diagram RDS(ON)
hm2301c.pdf
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HM2301 P-Channel Trench Power MOSFETGeneral DescriptionThe HM2301 uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as -2.5V. This device is suitable for use as abattery protection or in other switching application.FeaturesSchematic Diagram VDS = -12V,ID =-2. AR
hm25p04k.pdf
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HM25P04KP-Channel Enhancement Mode Power MOSFET Description The HM25P04K uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features VDS = -40V,ID = -25A Schematic diagram RDS(ON)
hm2n10.pdf
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N-Channel Enhancement Mode Power MOSFET Description DThe uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. General Features S VDS = 100V,ID = 2A Schematic diagram RDS(ON)
hm2n10b.pdf
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HM N-Channel Enhancement Mode Power MOSFET Description DThe HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features VDS = 100V,ID = 2A Schematic diagram RDS(ON)
hm2305b.pdf
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HM2305BP-Channel Enhancement Mode Power MOSFET Description DThe HM2305B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDS = -12V,ID = -4.1A RDS(ON)
hm2309.pdf
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HM2309P-Channel 60V(D-S)GENERAL DESCRIPTION FEATURES RDS(ON)215m@VGS=-10V The HM2309 is the P-Channel logic enhancement mode power RDS(ON)260m@VGS=-4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to Ex
hm25p04d.pdf
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HM25P04DP-Channel Enhancement Mode Power MOSFET Description The HM25P04D uses advanced trench technology and design to provide excellent RDS(ON) with low gatecharge .This device is well suited for high current load applications. General Features Schematic diagram VDS =-40V,ID =-25A RDS(ON)
hm2809dr.pdf
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HM2809DR P-Channel 60V(D-S)GENERAL DESCRIPTION FEATURES RDS(ON)188m@VGS=-10V The HM2809DR is the P-Channel logic enhancement mode power RDS(ON)266m@VGS=-4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to
hm2n70r.pdf
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H General Description VDSS 700 V HM2N70R, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization a
hm2n25.pdf
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HM2N25N-Channel Enhancement Mode Power MOSFET Description The HM2N25 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 250V,ID =2A Schematic diagram RDS(ON)
hm2301.pdf
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HM2301 P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram VDS = -20V,ID = -3A RDS(ON)
hm20n15a.pdf
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HM20N15AN-Channel Enhancement Mode Power MOSFET Description The HM20N15A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A Schematic diagram RDS(ON)
hm25n50.pdf
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HM25N50General Description VDSS 500 V HM25N50 the silicon N-channel Enhanced ID 25 A PD(TC=25) 300 W VDMOSFET, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.21 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization a
hm2301bkr.pdf
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HM2301BKR P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The HM2301BKR is the P-Channel logic enhancement mode power RDS(ON)= 0.48 @VGS=-4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)= 0.67 @VGS=-2.5V trench technology. This high density process is especially tailored to RDS(ON)= 0.95 @VGS=-1.8V minimize on-state resist
hm2302.pdf
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HM2302N-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES VDS = 20V,ID = 2.9A D3RDS(ON)
hm20n60a.pdf
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HM20N60A VDSS 600 V General Description ID 20 A HM20N60A, the silicon N-channel Enhanced PD(TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturiza
hm2310b.pdf
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HM2310BN Channel Enhancement Mode MOSFET DESCRIPTION The HM2310B is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook co
hm25q40a.pdf
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HM25Q40A3V 4M-BITSERIAL NOR FLASH WITHDUAL AND QUAD SPIPreliminary Datasheet 1HM25Q40AContentsFEATURES................................................................................................................................................................. 4GENERAL DESCRIPTION................................................................................................
hm2n70.pdf
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N- MOS / N-CHANNEL POWER MOSFETN- MOS / N-CHANNEL POWER MOSFET N- MOS / N-CHANNEL POWER MOSFETN- MOS / N-CHANNEL POWER MOSFETRoHSRoHS RoHSRoHSFEATURESFEATURESFEATURES LOW ON-RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMP
hm2369.pdf
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HM236930V P-Channel Enhancement-Mode MOSFET 30V P MOS VDS= -30V RDS(ON), Vgs@-10V, Ids@-6.0A 25m =RDS(ON), Vgs@-6.0V, Ids@-5.0A = 30m RDS(ON), Vgs@-4.5V, Ids@-3.0A = 40m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Packag
hm2306.pdf
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HM2306 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2306 uses advanced trench technology to provide Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a GBattery protection or in other Switching application. SGENERAL FEATURES VDS = 30V,ID = 5.8A Schematic diagram RDS(ON)
hm25n03d.pdf
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HM25N03D N-Channel Enhancement Mode Power MOSFET Description The HM25N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =25A RDS(ON)
hm2300d.pdf
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HM2300DN-Channel Enhancement Mode Power MOSFET Description DThe HM2300D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SSchematic diagram General Features VDS = 20V,ID = 6.0A RDS(ON)
hm2015dn03q.pdf
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HM2015DN03Q30V Half Bridge Dual N-Channel Enhancement Mode Power MOSFET Description The HM2015DN03Q is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization. It includes two specialized MOSFETs in a dual Power DFN3X3 package. The Q1 "High Side" MOSFET is desgined to minimze switching losses. The Schematic Diagram Q2"Lo
hm20n15.pdf
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HM20N15NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A RDS(ON)
hm2300b.pdf
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HM2300BN-Channel Enhancement Mode Power MOSFET Description DThe HM2300B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SSchematic diagram General Features VDS = 20V,ID = 4.5A RDS(ON)
hm2312b.pdf
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HM2312BN-Channel Enhancement Mode Power MOSFET Description DThe HM2312B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SSchematic diagram General Features VDS = 20V,ID = 4.5A RDS(ON)
hm20n120tb.pdf
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IGBT Features 1200V,20A VCE(sat)(typ.)=2.7V@VGE=15V,IC=20A High speed switching Higher system efficiency Soft current turn-off waveforms General Description KEDA PT IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating), and other soft switching applications. Absolute Maximum Ratings Sym
hm2302bwsr.pdf
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Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary VDS(V) RDS(on)() ID(A) 20 0.29@ VGS=4.5V 0.5SOT-563 S2 1 D2 6 G2 2 G1 5 4 S1 3 D1 Absolute maximum rating@25 Parameter Symbol Maximum Units Drain-Source Voltage
hm20n120t.pdf
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HM20N120TTypical Performance Characteristics Figure1:maximum DC collector current Figure2:power dissipation VS. case temprature VS. case temprature Figure3:forward SOA,TC=25,TJ150 Figure4:reverse bias SOA,TJ=150,VGE=15V - 3 - Rev1.1 November. 2011 Shenzhen H&M Semiconductor Co.Ltd http//www.hmsemi.com HM20N120TFigure5:typical IGBT output characteristics, Fi
hm2301bsr.pdf
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HM2301BSR P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The HM2301BSR is the P-Channel logic enhancement mode power RDS(ON)= 0.48 @VGS=-4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)= 0.67 @VGS=-2.5V trench technology. This high density process is especially tailored to RDS(ON)= 0.95 @VGS=-1.8V minimize on-state resist
hm25p03k.pdf
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HM25P03KP-Channel Enhancement Mode Power MOSFET DDESCRIPTION The HM25P03K uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. SSchematic diagram GENERAL FEATURES V = -30V,ID = -25A D SRDS(ON)
hm25p06d.pdf
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HM25P06DP-Channel Enhancement Mode Power MOSFET Description The HM25P06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-25A RDS(ON)
hm2302kr.pdf
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HM2302KRN-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM2302KR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES VDS = 20V,ID = 2.9A D3RDS(ON)
hm20n06.pdf
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N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =20A RDS(ON)
hm2301b.pdf
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HM2301BP-Channel Enhancement Mode Power MOSFET Description DThe HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -20V,ID = -2.5A RDS(ON)
hm20n60.pdf
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20N60 VDSS 600 VGeneral Description ID 20 AHM20N60, the silicon N-channel EnhancedPD(TC=25) 250 WVDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switchingperformance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizati
hm2341.pdf
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HM2341 P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM2341 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -30V,ID = -4.2A RDS(ON)
hm20n120ab.pdf
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IGBT Features 1200V,20A VCE(sat)(typ.)=2.7V@VGE=15V,IC=20A High speed switching Higher system efficiency Soft current turn-off waveforms General Description KEDA PT IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating), and other soft switching applications. Absolute Maximum Ratings Symbol
hm24n20ka.pdf
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N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)
hm2318b.pdf
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HM2318BN Channel Enhancement Mode MOSFET DESCRIPTION HM2318B is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer
hm2n20r.pdf
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HM2N20RN-Channel Enhancement Mode Power MOSFET Description DThe HM2N20R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. General Features S VDS = 200V,ID =2A Schematic diagram RDS(ON)
hm20p02q.pdf
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HM20P02QP-Channel Enhancement Mode Power MOSFET DDescription The HM20P02Q uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Sload switch or in PWM applications. Schematic diagram General Features VDS = -20V,ID = -20A RDS(ON)
hm25n120t.pdf
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IGBT Features 1200V, 25A ,V =2.3 V@V =15V CE(sat)(typ.) GE High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA General Description DAXINs IGBTs offer lower losses and higher energy for application such as motor drive ,UPS, inverter and other soft switching applications. Absolute Maxinmun Ratings
hm2309b.pdf
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HM2309B P-Channel 60V(D-S)GENERAL DESCRIPTION FEATURES RDS(ON)188m@VGS=-10V The HM2309B is the P-Channel logic enhancement mode power RDS(ON)266m@VGS=-4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to
hm2302f.pdf
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HM2302FN-Channel Enhancement Mode Power MOSFET Description The HM2302F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VDS = 20V,ID = 2.8A RDS(ON)
hm2310pr.pdf
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HM2310PRDescription The HM2310PR uses advanced trench technology to provide Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a GBattery protection or in other switching application. SGeneral Feature VDS =60V,ID =4.0A Schematic diagram RDS(ON)
hm2300pr.pdf
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HM2300PRN-Channel Enhancement Mode Power MOSFET Description DThe HM2300PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SGeneral Features Schematic diagram VDS = 20V,ID = 5.5A RDS(ON)
hm2328.pdf
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HM2328100V N Channel Enhancement Mode MOSFET 100 V N MOS VDS= 100V RDS(ON), Vgs@10V, Ids@1.0A = 270mRDS(ON), Vgs@4.5V, Ids@0.5A = 340mFeatures Advanced trench process technology High Density Cell Design For Ultra Low OnResistance Improved ShootThrough FOM
hm2319a.pdf
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HM2319AP-Channel Enhancement Mode Power MOSFET DDescription The HM2319A uses advanced trench technology to Gprovide excellent RDS(ON), This device is suitable for use as a load switch and battery protection applications. SSchematic diagram General Features VDS = -40V,ID = -5.0A RDS(ON)
hm2314.pdf
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HM2314N-Channel Enhancement Mode Power MOSFET Description DThe HM2314 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SSchematic diagram General Features VDS = 20V,ID = 4.5A RDS(ON)
hm2300c.pdf
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HM2300CN-Channel Enhancement Mode Power MOSFET Description DThe HM2300C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SSchematic diagram General Features VDS = 20V,ID = 6.0A RDS(ON)
hm2309d.pdf
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P-Channel Enhancement Mode Power MOSFET Description The HM2309D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features VDS =-60V,ID =-1.6A Schematic diagram RDS(ON)
hm2n20mr.pdf
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HM2N20MR200V N-Channel Enhancement Mode MOSFET Description The HM2N20MR uses advanced trench technology and design to provide excellent R with low gate charge. DS(ON) It can be used in a wide variety of applications. General Features V = 200V,I =2A DS DR
hm2301e.pdf
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HM2301EP-Channel Trench Power MOSFETGeneral DescriptionThe HM2301E uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as -2.5V. This device is suitable for use as abattery protection or in other switching application.FeaturesSchematic Diagram VDS = -12V,ID =-2.0AR
hm26n18k.pdf
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HM26N18KN-Channel Enhancement Mode Power MOSFET Description The HM26N18K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =185V,ID =26A RDS(ON)
hm2807.pdf
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HM2807 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2807 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 100V,ID =100A RDS(ON)
hm2302dr.pdf
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GENERAL DESCRIPTION FEATURES The HM2302DR is the N-Channel logic enhancement mode power RDS(ON)= 270 m @VGS=4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)= 330 m @VGS=2.5V trench technology. This high density process is especially tailored to RDS(ON)= 450 m @VGS=1.8V minimize on-state resistan
hm2301bjr.pdf
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HM2301BJR P-Channel MOSFET Description The MOSFET provide the best combination of fast switching, D3 low on-resistance and cost-effectiveness. MOSFET Product Summary V (V) R ( ) I (mA) DS DS(on) D0.45@ V =-4.5V GSG1 -20 0.62@ VGS=-2.5V -800 0.86@ V =-1.8V GSS2Absolute maximum rating@25 Parameter Symbol Value Units Drain-Source Voltage
hm25n08d.pdf
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HM25N08D N-Channel Enhancement Mode Power MOSFET Description The HM25N08D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =25A RDS(ON)
hm20n65f.pdf
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V General Description VDSS 650 ID 20 A HM20N65F, the silicon N-channel Enhanced PD(TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.37 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizati
hm25p15.pdf
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HM25P15P-Channel Enhancement Mode Power MOSFET Description The HM25P15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-150V,ID =-25A Schematic diagram RDS(ON)
hm2305d.pdf
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HM2305DP-Channel Enhancement Mode Power MOSFET Description DThe HM2305D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Sload switch or in PWM applications. Schematic diagram General Features VDS = -20V,ID = -8.0A RDS(ON)
hm20pd05.pdf
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P-Channel Enhancement Mode Power MOSFET Description The HM20PD05 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VDS = -20V,ID =- 5A RDS(ON)
hm25n06q.pdf
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HM25N06QDescription The HM25N06Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS >60V,ID =25A RDS(ON)
hm2n60.pdf
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N RN-CHANNEL MOSFET HM2N60 MAIN CHARACTERISTICS Package 2.0 A ID 600 V VDSS Rdson 4.5 @Vgs=10V6.0 nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS
hm20n15ka.pdf
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HM20N15KAN-Channel Enhancement Mode Power MOSFET Description The HM20N15KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A Schematic diagram RDS(ON)
hm2n20.pdf
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HM2N20N-Channel Enhancement Mode Power MOSFET DDescription The HM2N20 uses advanced trench technology and Gdesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. SGeneral Features Schematic diagram VDS = 200V,ID =2A RDS(ON)
hm2310.pdf
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HM2310N-Channel Enhancement Mode Power MOSFET DDESCRIPTION The HM2310 uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a SBattery protection or in other Switching application. Schematic diagram GENERAL FEATURES VDS =60V,ID =3A RDS(ON)
hm25n06d.pdf
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HM25N06DDescription The HM25N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS >60V,ID =25A RDS(ON)
hm20n15d.pdf
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HM20N15DN-Channel Enhancement Mode Power MOSFET Description The HM20N15D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =20A RDS(ON)
hm2n20pr.pdf
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HM2N20PRN-Channel Enhancement Mode Power MOSFET Description DThe HM2N20PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. General Features S VDS = 200V,ID =2A Schematic diagram RDS(ON)
hm2p10r.pdf
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HM2P10R Power MOSFET Datasheet P-Channel Enhancement Mode MOSFET FEATURES APPLICATIONS Battery Charge RDS(Typ.)
hm20n15k.pdf
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HM20N15KDescription The HM20N15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A RDS(ON)
hm25p03q.pdf
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P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 4.5V. GENERAL FEATURES S V = -30V,ID = -25A S DSchematic diagram RDS(ON)
hm20n06ka.pdf
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HM20N06KAN-Channel Enhancement Mode Power MOSFET Description The HM20N06KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =20A RDS(ON)
hm2800d.pdf
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HM2800DN-Channel Enhancement Mode Power MOSFET Description The HM2800D uses advanced trench technology to provide D2D1excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. G2G1S2S1General Features Schematic diagram VDS = 20V,ID = 5.0A RDS(O
hm20n06ia.pdf
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N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =20A Schematic diagram RDS(ON)
hm2n10mr.pdf
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N-Channel Enhancement Mode Power MOSFET Description DThe uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features VDS = 100V,ID = 2A Schematic diagram RDS(ON)
hm2907.pdf
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Pin Description Features VDSS=80VVGSS=25VID=180A RDS(ON)=4.5m(max.)@VGS=10V Low Dense Cell Design Reliable and Rugged Advanced trench process technology Applications Synchronous Rectification Power Management in Inverter S
hm24n20k.pdf
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HM24N20K N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM24N20K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =200V,ID =24A RDS(ON)
hm2312.pdf
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HM2312N-Channel Enhancement Mode Power MOSFET Description DThe HM2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SSchematic diagram General Features VDS = 20V,ID = 4.5A RDS(ON)
hm24n20.pdf
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HM24N20 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM24N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =200V,ID =24A RDS(ON)
hm2302a.pdf
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HM2302AN-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM2302A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES VDS = 20V,ID = 2.9A D3RDS(ON)
hm25p06k.pdf
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HM25P06KP-Channel Enhancement Mode Power MOSFET Description The HM25P06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-25A RDS(ON)
hm20p02d.pdf
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P-Channel Enhancement Mode Power MOSFET Description DThe uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -20V,ID = -20A RDS(ON)
hm2314b.pdf
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HM2314BN-Channel Enhancement Mode Power MOSFET Description DThe HM2314B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SSchematic diagram General Features VDS = 20V,ID = 4.5A RDS(ON)
hm2n15pr.pdf
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HM2N15PRN-Channel Enhancement Mode Power MOSFET DDescription The HM2N15PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features Schematic diagram VDS = 150V,ID = 2A RDS(ON)
hm2333.pdf
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HM2333 P-Channel Enhancement Mode Power MOSFET Description DThe HM2333 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -12V,ID = -6A RDS(ON)
hm20n60f.pdf
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Silicon N-Channel Power MOSFET HM20N60F VDSS 600 V General Description ID 20 A HM20N60F, the silicon N-channel Enhanced PD(TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching
hm25p03d.pdf
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P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 4.5V. GENERAL FEATURES S V = -30V,ID = -25A S DSchematic diagram RDS(ON)
hm2301dr.pdf
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H P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The is the P-Channel logic enhancement mode power RDS(ON)= 0.48 @VGS=-4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)= 0.67 @VGS=-2.5V trench technology. This high density process is especially tailored to RDS(ON)= 0.95 @VGS=-1.8V minimize on-state resistan
hm2301d.pdf
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H P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The is the P-Channel logic enhancement mode power RDS(ON)= 0.48 @VGS=-4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)= 0.67 @VGS=-2.5V trench technology. This high density process is especially tailored to RDS(ON)= 0.95 @VGS=-1.8V minimize on-state resistance
hm2309apr.pdf
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HM2309APRP-Channel Enhancement Mode Power MOSFET Description The HM2309APR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features Schematic diagram VDS =-60V,ID =-5A RDS(ON)
hm2341b.pdf
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HM2341B P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM2341B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -30V,ID = -4.2A RDS(ON)
hm2n65r.pdf
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HM2N65RGeneral Description VDSS 650 V HM2N65R the silicon N-channel Enhanced ID 2 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 7.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and
hm2309c.pdf
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P Channel Enhancement Mode MOSFET DESCRIPTION HM2309C is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook
hm2302bwkr.pdf
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HM2302BWKR Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The HM2302BWKR uses advanced trench technology to VDS (V) = 20V ID = 0.9 A (VGS = 4.5V) excellent RDS(ON), low gate charge and operation voltages as low as 1.8V, in the small SOT363 RDS(ON)
hm25p15k.pdf
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HM25P15KP-Channel Enhancement Mode Power MOSFET Description The HM25P15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-150V,ID =-25A RDS(ON)
hm2809d.pdf
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HM2809D P-Channel 60V(D-S)GENERAL DESCRIPTION FEATURES RDS(ON)188m@VGS=-10V The HM2809D is the P-Channel logic enhancement mode power RDS(ON)266m@VGS=-4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to
hm2302bjr.pdf
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JHM2302BJR SOT-723 Plastic-Encapsulate MOSFETS HM2302BJR N-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-723 380m@ 4.5V20V 450m@2.5V0.75A 800m@1.8V1. GATE 2. SOURCE 3. DRAIN FEATURES APPLICATION Lead Free Product is Acquired Load/Power Switching Surface Mount Package Interfacing Switching N-Channel Switch with Low RDS(on) Battery Manage
hm2p10pr.pdf
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HM2P10PR Power MOSFET Datasheet P-Channel Enhancement Mode MOSFET FEATURES APPLICATIONS Battery Charge RDS(Typ.)
hm2318apr.pdf
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HM2318 N-Channel 40V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The HM is the N-Channel logic enhancement mode power RDS(ON) 28m@VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON) 38m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)
hm2300dr.pdf
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HM2300DRN-Channel Enhancement Mode Power MOSFET Description The HM2300DR uses advanced trench technology to provide Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Gbattery protection or in other switching application. SGeneral Features VDS = 20V,ID = 8.0A Schematic diagram RDS(ON)
hm2301kr.pdf
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HM2301KR P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM2301KR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram VDS = -20V,ID = -3A RDS(ON)
hm2305pr.pdf
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HM2305PRP-Channel Enhancement Mode Power MOSFET Description DThe HM2305PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Gload switch or in PWM applications. SGeneral Features Schematic diagram VDS = -20V,ID = - .1A RDS(ON)
hm2302b.pdf
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HM2302BN-Channel Enhancement Mode Power MOSFET Description The HM2302B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VDS = 20V,ID = 2.5A RDS(ON)
hm2302e.pdf
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HM2302EN-Channel Trench Power MOSFETGeneral DescriptionThe HM2302E uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as abattery protection or in other switching application.Schematic DiagramFeatures VDS = 15V,ID =2.0AR
hm24n50a.pdf
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HM24N50A500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 25A, 500V, RDS(on)typ. = 167m@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 96nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingperformance
hm2302d.pdf
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GENERAL DESCRIPTION FEATURES The HM2302D is the N-Channel logic enhancement mode power RDS(ON)= 270 m @VGS=4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)= 330 m @VGS=2.5V trench technology. This high density process is especially tailored to RDS(ON)= 450 m @VGS=1.8V minimize on-state resistance
hm2318a.pdf
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HM2318A N-Channel 40V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The HM2318A is the N-Channel logic enhancement mode power RDS(ON) 28m@VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON) 38m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON) min
hm2803d.pdf
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HM2803DDual P-Channel Enhancement Mode Power MOSFET Description The HM2803D uses advanced trench technology to provide D2D1excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. G2G1S2S1General Features Schematic diagram VDS = -20V,ID = -5.0A RDS(ON)
hm25n03q.pdf
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HM25N03QDescription The HM25N03Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =25A RDS(ON)
hm2309al.pdf
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HM2309ALH&M Semi P-Channel Enhancement Mode Power MOSFET Description The HM2309AL uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features Schematic diagram VDS =-60V,ID =-4.6A RDS(ON)
hm2301f.pdf
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HM2301FP-Channel Enhancement Mode Power MOSFET Description DThe HM2301F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -20V,ID = -2.8A RDS(ON)
hm20n50a.pdf
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500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 20.0A, 500V, RDS(on) = 0.26 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 70nC)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche tested
hm2309dr.pdf
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HM2309DR P-Channel 60V(D-S)GENERAL DESCRIPTION FEATURES RDS(ON)188m@VGS=-10V The HM2309DR is the P-Channel logic enhancement mode power RDS(ON)266m@VGS=-4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to
hm2030q.pdf
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HM2030QDual N-Ch Fast Switching MOSFETs Product Summary Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline BVDSS RDSON ID Advanced high cell density Trench 20V 5.8m 56A technology General Description DFN3x3 Pin Configuration The is the highest performance trench N-ch MOSFETs with extreme high cell density, which provi
hm2319.pdf
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HM2319P-Channel Enhancement Mode Power MOSFET DDescription The HM2319 uses advanced trench technology to Gprovide excellent RDS(ON), This device is suitable for use as a load switch and battery protection applications. SSchematic diagram General Features VDS = -40V,ID = - A RDS(ON)
hm20n50f.pdf
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500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 20.0A, 500V, RDS(on) = 0.26 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 70nC)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalan
hm2300.pdf
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HM2300N-Channel Enhancement Mode Power MOSFET Description DThe HM2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SSchematic diagram General Features VDS = 20V,ID = 4.5A RDS(ON)
hm2305.pdf
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P-Channel Enhancement Mode Power MOSFET Description DThe uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDS = -20V,ID = -4.1A RDS(ON)
hm2807d.pdf
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HM2807D N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2807D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 100V,ID =100A RDS(ON)
hm2310c.pdf
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HM N Channel Enhancement Mode MOSFET DESCRIPTION The HM2310C is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook co
slc500mm20shn2.pdf
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SLC500MM20SHN2200V NMOSFET500AAutomotive 200 V N-Channel MOSFET,500A Half-Bridge Power Module.VDSS=200VID nom=500ARDS(ON) typ=2.5m Features Low Rdson High current density High Ruggedness HalfbridgeEasy paralleling App
mpsa70m290 mpsp70m290 mpsh70m290 mpsc70m290.pdf
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MPSA70M290,MPSP70M290,MPSC70M290,MPSH70M290FEATURES APPLICATIONS BVDSS=700V, ID=15A Switch Mode Power Supply (SMPS)RDS(on):0.29(Max)@VGS=10V Uninterruptible Power Supply (UPS)Very low FOM RDS(on)Qg Power Factor Correction (PFC) 100% avalanche tested RoHS compliantTO-262TO-220F TO-263TO-220Device Marking and Package InformationOrdering code
mpsa60m240.pdf
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MPSA60M240600V Super-Junction Power MOSFETFEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliantGAPPLICATIONS DS TO-220F Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationOrdering Code Package MarkingMPSA60M240 TO-220F MP60M240Absolute Maximum Ratin
mpsa65m280cfd.pdf
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MPSA65M280CFD650V Super-Junction Power MOSFETFEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant Ultra-fast body diode Very high commutation ruggdnessGDS TO-220FAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Resonant switching stagesDevice Marking and Pack
mpsa80m250b.pdf
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MPSA80M250B800V N-Channel Super Junction MOSFETFeaturesBVDSS=800 V, ID =18 ARDS(on) @ :0.25 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedGD Built-in ESD Diode S TO-220FApplication Switch Mode Power Supply (SMPS) TV power & LED Lighting Power
mpsa70m200cfd.pdf
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MPSA70M200CFD700V Super-Junction Power MOSFETFEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant Ultra-fast body diode Very high commutation ruggdnessGDS TO-220FAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Resonant switching stagesDevice Marking and Pack
mpsa65m210b.pdf
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MPSA65M210B650V N-Channel Super Junction MOSFETFeaturesBVDSS=650V, I D=16.8ARDS(on) @ :0.21 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedG Built-in ESD DiodeDS TO-220FApplication Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (U
mpsa60m250cfd.pdf
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MPSA60M250CFD600V Super-Junction Power MOSFETFEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant Ultra-fast body diode Very high commutation ruggdnessGDS TO-220FAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Resonant switching stagesDevice Marking and Pack
mpsa65m260 mpsp65m260 mpsh65m260 mpsc65m260 mpsy65m260.pdf
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MPSA65M260,MPSP65M260,MPSC65M260,MPSH65M260,MPSY65M260FEATURES APPLICATIONS BVDSS=650V, ID=15A Switch Mode Power Supply (SMPS)RDS(on):0.26(Max)@VGS=10V Uninterruptible Power Supply (UPS)Very low FOM RDS(on)Qg Power Factor Correction (PFC) 100% avalanche tested RoHS compliantTO-220FTO-220 TO-262 TO-263DFN 8*8Device Marking and Package Informat
legm25be120e2h.pdf
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Mar.2020 LEGM25BE120E2H IGBT Power Module Features: Applications: VCE=1200V IC=25A The inverter Low VCE(sat) Motor control and drives VCEsat with positive temperature coefficient Maximum junction temperature 175 Isolation Type Package Package Type & Internal Circuit E2 Internal Circuit Maximum Rated ValuesIGBT Inverter Symbol Parame
legm200bh120l2k.pdf
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Sep.2020LEGM200BH120L2KIGBT Power ModuleFeatures: Applications: VCE=1200V IC=200A The inverter Low VCE(sat) Motor control and drives VCEsat with positive temperature coefficient Maximum junction temperature 150 Isolation Type PackagePackage Type & Internal Circuit L2Internal CircuitMaximum Rated ValuesIGBT InverterSymbol Parameter Condi
legm200ba120l2h.pdf
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Sep.2020LEGM200BA120L2HIGBT Power ModuleFeatures Applications VCE=1200V IC=200A The inverter Low VCE(sat) Motor control and drives VCEsat with positive temperature coefficient Maximum junction temperature 150 Isolation Type PackagePackage Type & Internal Circuit L2 Internal CircuitMaximum Rated ValuesIGBT InverterSymbol Parameter Conditio
hckd5n65bm2.pdf
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HCKD5N65BM2@Trench-FS Cool-Watt IGBTHCKD5N65BM2 is a 650V5A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a anti-parallel diode,has the characteristics of lowV ,high junction temperature and strong robustness. It is very suitable for products withcesatmotor and fans driver. Features CoolWatt@ Trench-FS technology
hckd5n65am2.pdf
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HCKD5N65AM2@Trench-FS Cool-Watt IGBTHCKD5N65AM2 is a 650V5A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a anti-parallel diode,has the characteristics of lowV ,high junction temperature and strong robustness. It is very suitable for products withcesatmotor and fans driver. Features CoolWatt@ Trench-FS technology
hpm2305.pdf
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HPM2305P-Channel MOSFETs-3.9A,-20VP P HPM2305P-Channel Enhancement-Mode MOS FETs SMDP-ChannelEnhancementFeaturesMode MOS FETs-20V, -3.9A, RDS(ON)=55m @ VGS=-4.5VHigh dense cell design for extremely low RDS(ON)Rugged and reliable
hnm2302.pdf
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HNM2302N-Channel MOSFETs3.5A, 20V N N MOS HNM2302N-Channel Enhancement Mode Field Effect TransistorN-ChannelEnhancement ModeFeaturesField Effect Transistor20V, 3.5A, RDS(ON)=60m @VGS=4.5VHigh dense cell design for extremely low RDS(ON)Rugged and reliable
hpm2623.pdf
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HPM2623P-Channel MOSFETs-6A, -20V P P HPM2623P-Channel Enhancement-Mode MOSFETs SMDP-ChannelEnhancementFeaturesMode MOS FETs-20V, -6A, RDS(ON)=33m @ VGS=-4.5VHigh dense cell design for extremely low RDS(ON) Rugged a
hpm2301.pdf
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HPM2301P-Channel MOSFETs-2.8A,-20VP P HPM2301P-Channel Enhancement-Mode MOS FETsP-ChannelEnhancementFeaturesMode MOS FETs-20V, -2.8A, RDS(ON)=100m @ VGS=-10VHigh dense cell design for extremely low RDS(ON)Rugged and reliableLea
hnm2302alb.pdf
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HNM2302ALBN-Channel MOSFETs3.7A, 20V N N HNM2302ALBN-Channel Enhancement Mode Field Effect Transistor SMDN-ChannelEnhancement ModeFeaturesField Effect Transistor20V, 3.7A, RDS(ON)=50m @ VGS=4.5VHigh dense cell design for extremely low RDS(ON)
ixfm20n60.pdf
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Isc N-Channel MOSFET Transistor IXFM20N60FEATURESWith To-3 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600
apt20m22lvfr.pdf
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isc N-Channel MOSFET Transistor APT20M22LVFRFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.022(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
apt20m20lfll.pdf
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isc N-Channel MOSFET Transistor APT20M20LFLLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.02(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp
frm240.pdf
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INCHANGE Semiconductorisc N-Channel Mosfet Transistor FRM240FEATURES16A, 200V, RDS(on) = 0.24Second Generation Rad Hard MOSFET ResultsFrom New Design ConceptsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIt is specially designed and processed toexhibit minimal characteristic changes to total dose and neutronexposures
ixtm24n50.pdf
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Isc N-Channel MOSFET Transistor IXTM24N50FEATURESWith To-3 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500
apt20m20b2fll.pdf
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isc N-Channel MOSFET Transistor APT20M20B2FLLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.02(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
apt20m20b2ll.pdf
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isc N-Channel MOSFET Transistor APT20M20B2LLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.02(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp
stf18n60m2.pdf
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isc N-Channel MOSFET Transistor STF18N60M2FEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
apt10m25bvr.pdf
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isc N-Channel MOSFET Transistor APT10M25BVRFEATURESDrain Current I =75A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R =0.025(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
frm230.pdf
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INCHANGE Semiconductorisc N-Channel Mosfet Transistor FRM230FEATURES8A, 200V, RDS(on) = 0.5Second Generation Rad Hard MOSFET ResultsFrom New Design ConceptsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIt is specially designed and processed to exhibit minimalcharacteristic changes to total dose and neutron exposures.
apt20m22lvr.pdf
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isc N-Channel MOSFET Transistor APT20M22LVRFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.022(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp
pm2301.pdf
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PM2301 20V P-Channel MOSFET Description Applications The PM2301 uses advanced Trench technology and designs to provide excellent R with low gate charge. PA Switch DS(ON)This device is suitable for use in PWM, load switching and Load Switch general purpose applications. Marking Information Features TrenchFET Power MOSFET 2301 Dimensions and Pin Configurati
pm2302.pdf
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PM2302 20V N-Channel MOSFET Description Applications The PM2302 uses advanced Trench technology and DC/DC Converter designs to provide excellent R with low gate charge. Load Switch for Portable Devices DS(ON)This device is suitable for use in PWM, load switching and Battery Switch general purpose applications. Outline Drawing Features Trench Power MOSFET
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
![M2](https://alltransistors.com/images/us.png)
![M2](https://alltransistors.com/images/es.png)
![M2](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
BJT: 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS