Справочник транзисторов. MJ11030

 

Биполярный транзистор MJ11030 Даташит. Аналоги


   Наименование производителя: MJ11030
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 300 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 90 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 90 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 50 A
   Предельная температура PN-перехода (Tj): 175 °C
   Статический коэффициент передачи тока (hfe): 2000
   Корпус транзистора: TO3
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MJ11030 Datasheet (PDF)

 ..1. Size:207K  inchange semiconductor
mj11030.pdfpdf_icon

MJ11030

isc Silicon NPN Darlington Power Transistor MJ11030DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 90V(Min.)(BR)CEOHigh DC Current Gain-: h = 1000(Min.)@I = 25AFE C: h = 400(Min.)@I = 50AFE CComplement to the PNP MJ11031Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devices in comp

 8.1. Size:116K  onsemi
mj11032g.pdfpdf_icon

MJ11030

MJ11028, MJ11030,MJ11032 (NPN)MJ11029, MJ11033 (PNP)High-CurrentComplementary Siliconhttp://onsemi.comPower TransistorsHigh-Current Complementary Silicon Power Transistors are for use50 AMPEREas output devices in complementary general purpose amplifierCOMPLEMENTARYapplications.DARLINGTON POWERFeaturesTRANSISTORS High DC Current Gain - hFE = 1000 (Min) @ IC = 25

 8.2. Size:116K  onsemi
mj11033g.pdfpdf_icon

MJ11030

MJ11028, MJ11030,MJ11032 (NPN)MJ11029, MJ11033 (PNP)High-CurrentComplementary Siliconhttp://onsemi.comPower TransistorsHigh-Current Complementary Silicon Power Transistors are for use50 AMPEREas output devices in complementary general purpose amplifierCOMPLEMENTARYapplications.DARLINGTON POWERFeaturesTRANSISTORS High DC Current Gain - hFE = 1000 (Min) @ IC = 25

 8.3. Size:207K  inchange semiconductor
mj11032.pdfpdf_icon

MJ11030

isc Silicon NPN Darlington Power Transistor MJ11032DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 120V(Min.)(BR)CEOHigh DC Current Gain-: h = 1000(Min.)@I = 25AFE C: h = 400(Min.)@I = 50AFE CComplement to the PNP MJ11033Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devices in com

Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: BD402 | 40968 | 41501 | BFR71 | MRF342 | MRF9411BLT3

 

 
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