All Transistors. MJ11030 Datasheet

 

MJ11030 Datasheet and Replacement


   Type Designator: MJ11030
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 300 W
   Maximum Collector-Base Voltage |Vcb|: 90 V
   Maximum Collector-Emitter Voltage |Vce|: 90 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 50 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 2000
   Noise Figure, dB: -
   Package: TO3
 

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MJ11030 Datasheet (PDF)

 ..1. Size:207K  inchange semiconductor
mj11030.pdf pdf_icon

MJ11030

isc Silicon NPN Darlington Power Transistor MJ11030DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 90V(Min.)(BR)CEOHigh DC Current Gain-: h = 1000(Min.)@I = 25AFE C: h = 400(Min.)@I = 50AFE CComplement to the PNP MJ11031Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devices in comp

 8.1. Size:116K  onsemi
mj11032g.pdf pdf_icon

MJ11030

MJ11028, MJ11030,MJ11032 (NPN)MJ11029, MJ11033 (PNP)High-CurrentComplementary Siliconhttp://onsemi.comPower TransistorsHigh-Current Complementary Silicon Power Transistors are for use50 AMPEREas output devices in complementary general purpose amplifierCOMPLEMENTARYapplications.DARLINGTON POWERFeaturesTRANSISTORS High DC Current Gain - hFE = 1000 (Min) @ IC = 25

 8.2. Size:116K  onsemi
mj11033g.pdf pdf_icon

MJ11030

MJ11028, MJ11030,MJ11032 (NPN)MJ11029, MJ11033 (PNP)High-CurrentComplementary Siliconhttp://onsemi.comPower TransistorsHigh-Current Complementary Silicon Power Transistors are for use50 AMPEREas output devices in complementary general purpose amplifierCOMPLEMENTARYapplications.DARLINGTON POWERFeaturesTRANSISTORS High DC Current Gain - hFE = 1000 (Min) @ IC = 25

 8.3. Size:207K  inchange semiconductor
mj11032.pdf pdf_icon

MJ11030

isc Silicon NPN Darlington Power Transistor MJ11032DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 120V(Min.)(BR)CEOHigh DC Current Gain-: h = 1000(Min.)@I = 25AFE C: h = 400(Min.)@I = 50AFE CComplement to the PNP MJ11033Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devices in com

Datasheet: MJ11017 , MJ11018 , MJ11019 , MJ11020 , MJ11021 , MJ11022 , MJ11028 , MJ11029 , C3198 , MJ11031 , MJ11032 , MJ11033 , MJ1200 , MJ12002 , MJ12003 , MJ12004 , MJ12005 .

Keywords - MJ11030 transistor datasheet

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