MJ11030 PDF and Equivalents Search

 

MJ11030 Specs and Replacement

Type Designator: MJ11030

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 300 W

Maximum Collector-Base Voltage |Vcb|: 90 V

Maximum Collector-Emitter Voltage |Vce|: 90 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 50 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 2000

Noise Figure, dB: -

Package: TO3

 MJ11030 Substitution

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MJ11030 datasheet

 ..1. Size:207K  inchange semiconductor

mj11030.pdf pdf_icon

MJ11030

isc Silicon NPN Darlington Power Transistor MJ11030 DESCRIPTION Collector-Emitter Breakdown Voltage V = 90V(Min.) (BR)CEO High DC Current Gain- h = 1000(Min.)@I = 25A FE C h = 400(Min.)@I = 50A FE C Complement to the PNP MJ11031 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as output devices in comp... See More ⇒

 8.1. Size:116K  onsemi

mj11032g.pdf pdf_icon

MJ11030

MJ11028, MJ11030, MJ11032 (NPN) MJ11029, MJ11033 (PNP) High-Current Complementary Silicon http //onsemi.com Power Transistors High-Current Complementary Silicon Power Transistors are for use 50 AMPERE as output devices in complementary general purpose amplifier COMPLEMENTARY applications. DARLINGTON POWER Features TRANSISTORS High DC Current Gain - hFE = 1000 (Min) @ IC = 25 ... See More ⇒

 8.2. Size:116K  onsemi

mj11033g.pdf pdf_icon

MJ11030

MJ11028, MJ11030, MJ11032 (NPN) MJ11029, MJ11033 (PNP) High-Current Complementary Silicon http //onsemi.com Power Transistors High-Current Complementary Silicon Power Transistors are for use 50 AMPERE as output devices in complementary general purpose amplifier COMPLEMENTARY applications. DARLINGTON POWER Features TRANSISTORS High DC Current Gain - hFE = 1000 (Min) @ IC = 25 ... See More ⇒

 8.3. Size:207K  inchange semiconductor

mj11032.pdf pdf_icon

MJ11030

isc Silicon NPN Darlington Power Transistor MJ11032 DESCRIPTION Collector-Emitter Breakdown Voltage V = 120V(Min.) (BR)CEO High DC Current Gain- h = 1000(Min.)@I = 25A FE C h = 400(Min.)@I = 50A FE C Complement to the PNP MJ11033 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as output devices in com... See More ⇒

Detailed specifications: MJ11017, MJ11018, MJ11019, MJ11020, MJ11021, MJ11022, MJ11028, MJ11029, 9014, MJ11031, MJ11032, MJ11033, MJ1200, MJ12002, MJ12003, MJ12004, MJ12005

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