MJ11032 - описание и поиск аналогов

isc Silicon NPN Darlington Power Transistor MJ11032 DESCRIPTION Collector-Emitter Breakdown Voltage V = 120V(Min.) (BR)CEO High DC Current Gain- h = 1000(Min.)@I = 25A FE C h = 400(Min.)@I = 50A FE C Complement to the PNP MJ11033 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as output devices in com

MJ11028, MJ11030, MJ11032 (NPN) MJ11029, MJ11033 (PNP) High-Current Complementary Silicon http //onsemi.com Power Transistors High-Current Complementary Silicon Power Transistors are for use 50 AMPERE as output devices in complementary general purpose amplifier COMPLEMENTARY applications. DARLINGTON POWER Features TRANSISTORS High DC Current Gain - hFE = 1000 (Min) @ IC = 25

MJ11028, MJ11030, MJ11032 (NPN) MJ11029, MJ11033 (PNP) High-Current Complementary Silicon http //onsemi.com Power Transistors High-Current Complementary Silicon Power Transistors are for use 50 AMPERE as output devices in complementary general purpose amplifier COMPLEMENTARY applications. DARLINGTON POWER Features TRANSISTORS High DC Current Gain - hFE = 1000 (Min) @ IC = 25

isc Silicon NPN Darlington Power Transistor MJ11030 DESCRIPTION Collector-Emitter Breakdown Voltage V = 90V(Min.) (BR)CEO High DC Current Gain- h = 1000(Min.)@I = 25A FE C h = 400(Min.)@I = 50A FE C Complement to the PNP MJ11031 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as output devices in comp

isc Silicon PNP Darlington Power Transistor MJ11031 DESCRIPTION Collector-Emitter Breakdown Voltage V = -90V(Min.) (BR)CEO High DC Current Gain- h = 1000(Min.)@I = -25A FE C h = 400(Min.)@I = -50A FE C Complement to the NPN MJ11030 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as output devices in c

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor MJ11033 DESCRIPTION Collector-Emitter Breakdown Voltage V(BR)CEO= -120V(Min.) High DC Current Gain- hFE= 1000(Min.)@IC= -25A hFE= 400(Min.)@IC= -50A Complement to Type MJ11032 APPLICATIONS Designed for use as output devices in complementary general purpose amplifie