MJ11032 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

MJ11032 Specs and Replacement

Type Designator: MJ11032

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 300 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 50 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 2000

Noise Figure, dB: -

Package: TO3

MJ11032 Substitution

- BJT ⓘ Cross-Reference Search

MJ11032 datasheet

..1. Size:207K inchange semiconductor

mj11032.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor MJ11032 DESCRIPTION Collector-Emitter Breakdown Voltage V = 120V(Min.) (BR)CEO High DC Current Gain- h = 1000(Min.)@I = 25A FE C h = 400(Min.)@I = 50A FE C Complement to the PNP MJ11033 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as output devices in com... See More ⇒

0.1. Size:116K onsemi

mj11032g.pdf pdf_icon

MJ11028, MJ11030, MJ11032 (NPN) MJ11029, MJ11033 (PNP) High-Current Complementary Silicon http //onsemi.com Power Transistors High-Current Complementary Silicon Power Transistors are for use 50 AMPERE as output devices in complementary general purpose amplifier COMPLEMENTARY applications. DARLINGTON POWER Features TRANSISTORS High DC Current Gain - hFE = 1000 (Min) @ IC = 25 ... See More ⇒

8.1. Size:116K onsemi

mj11033g.pdf pdf_icon

8.2. Size:207K inchange semiconductor

mj11030.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor MJ11030 DESCRIPTION Collector-Emitter Breakdown Voltage V = 90V(Min.) (BR)CEO High DC Current Gain- h = 1000(Min.)@I = 25A FE C h = 400(Min.)@I = 50A FE C Complement to the PNP MJ11031 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as output devices in comp... See More ⇒