Биполярный транзистор MJ13330 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MJ13330
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 175 W
Макcимально допустимое напряжение коллектор-база (Ucb): 400 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 200 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 20 A
Предельная температура PN-перехода (Tj): 200 °C
Граничная частота коэффициента передачи тока (ft): 5 MHz
Ёмкость коллекторного перехода (Cc): 400 pf
Статический коэффициент передачи тока (hfe): 15
Корпус транзистора: TO3
MJ13330 Datasheet (PDF)
mj13330.pdf
isc Silicon NPN Power Transistor MJ13330DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 200V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for line
mj13333r.pdf
Order this documentMOTOROLAby MJ13333/DSEMICONDUCTOR TECHNICAL DATAMJ13333Designer's Data SheetSWITCHMODE Series20 AMPERENPN Silicon Power TransistorNPN SILICONPOWER TRANSISTORSThe MJ13333 transistor is designed for high voltage, highspeed, power switching400500 VOLTSin inductive circuits where fall time is critical. It is particularly suited for line operated
mj13335.pdf
isc Silicon NPN Power Transistor MJ13335DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 500V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsInvertersSolenoid and relay driversMotor controlsDeflection circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSY
mj13332.pdf
isc Silicon NPN Power Transistor MJ13332DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for line
mj13334.pdf
isc Silicon NPN Power Transistor MJ13334DESCRIPTIONLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifiers ,low frequencyswitching and motor control applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C
mj13331.pdf
isc Silicon NPN Power Transistor MJ13331DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 250V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for line
mj13333.pdf
isc Silicon NPN Power Transistor MJ13333DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS) Reversed Biased SOA with Inductive LoadsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS Switching Regulators Inverters Solenoid and Relay Drivers Motor Controls Deflection CircuitsABSOLUTE
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: DMA2610F
History: DMA2610F
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050