MJ15011 - описание и поиск аналогов

MJ15011 (NPN), MJ15012 (PNP) Preferred Devices Complementary Silicon Power Transistors The MJ15011 and MJ15012 are PowerBase power transistors designed for high-power audio, disk head positioners, and other linear http //onsemi.com applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc-to-dc converters or 10 AMPERE inverters. CO

isc Silicon NPN Power Transistor MJ15011 DESCRIPTION Excellent Safe Operating Area DC Current Gain- h = 20(Min.)@I = 2A FE C Collector-Emitter Saturation Voltage- V )= 2.5V(Max)@ I = 4A CE(sat C Complement to the PNP MJ15012 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio, disk head positi

Order this document MOTOROLA by MJ15011/D SEMICONDUCTOR TECHNICAL DATA NPN MJ15011* Advance Information PNP MJ15012* Complementary Silicon Power Transistors *Motorola Preferred Device The MJ15011 and MJ15012 are PowerBase power transistors designed for 10 AMPERE high power audio, disk head positioners, and other linear applications. These devices COMPLEMENTARY can also be used

Order this document MOTOROLA by 2N3055A/D SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon 2N3055A High-Power Transistors * MJ15015 . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc to dc converters, inverters

Order this document MOTOROLA by MJ15018/D SEMICONDUCTOR TECHNICAL DATA MJ15015, MJ15016 (See 2N3055A) NPN Advance Information MJ15018 Complementary Silicon Power MJ15020* Transistors PNP . . . designed for use as high frequency drivers in Audio Amplifiers. MJ15019 High Gain Complementary Silicon Power Transistors Safe Operating Area 100% Tested MJ15021* 50 V, 3.0 A, 1.

2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP) MJ15015 and MJ15016 are Preferred Devices Complementary Silicon High-Power Transistors http //onsemi.com These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These 15 AMPERE devices can also be used in power switching circuits such as relay or solenoid drivers, dc-to-dc

2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP) Complementary Silicon High-Power Transistors http //onsemi.com These PowerBase complementary transistors are designed for high power audio, stepping motor and other linear applications. These 15 AMPERE devices can also be used in power switching circuits such as relay or COMPLEMENTARY SILICON solenoid drivers, dc-to-dc converters, invert

2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP) MJ15015 and MJ15016 are Preferred Devices Complementary Silicon High-Power Transistors http //onsemi.com These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These 15 AMPERE devices can also be used in power switching circuits such as relay or solenoid drivers, dc-to-dc

2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP) MJ15015 and MJ15016 are Preferred Devices Complementary Silicon High-Power Transistors http //onsemi.com These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These 15 AMPERE devices can also be used in power switching circuits such as relay or solenoid drivers, dc-to-dc

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SPTECH Product Specification SPTECH Silicon PNP Power Transistor MJ15016 DESCRIPTION Excellent Safe Operating Area DC Current Gain- h = 20-70@I = -4A,V = -4V FE C CE Collector-Emitter Saturation Voltage- V )= -1.1 V(Max)@ I = -4A CE(sat C Complement to the NPN MJ15015 APPLICATIONS Designed for high power audio, stepping motor and other linear applications, and can als

isc Silicon PNP Power Transistor MJ15016 DESCRIPTION Excellent Safe Operating Area DC Current Gain- h = 20-70@I = -4A,V = -4V FE C CE Collector-Emitter Saturation Voltage- V )= -1.1 V(Max)@ I = -4A CE(sat C Complement to the NPN MJ15015 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio, step

isc Silicon PNP Power Transistor MJ15012 DESCRIPTION Excellent Safe Operating Area DC Current Gain- h = 20(Min.)@I = -2A FE C Collector-Emitter Saturation Voltage- V )= -2.5V(Max)@ I = -4A CE(sat C Complement to the NPN MJ15011 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio, disk head pos

isc Silicon NPN Power Transistor MJ15015 DESCRIPTION Excellent Safe Operating Area DC Current Gain- h = 20-70@I = 4A,V = 4V FE C CE Collector-Emitter Saturation Voltage- V )= 1.1 V(Max)@ I = 4A CE(sat C Complement to the PNP MJ15016 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio, stepping