MJ15011 (NPN),MJ15012 (PNP)Preferred DevicesComplementary SiliconPower TransistorsThe MJ15011 and MJ15012 are PowerBase power transistorsdesigned for high-power audio, disk head positioners, and other linearhttp://onsemi.comapplications. These devices can also be used in power switchingcircuits such as relay or solenoid drivers, dc-to-dc converters or 10 AMPEREinverters.CO

isc Silicon PNP Power Transistor MJ15012DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h = 20(Min.)@I = -2AFE CCollector-Emitter Saturation Voltage-: V )= -2.5V(Max)@ I = -4ACE(sat CComplement to the NPN MJ15011Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, disk head pos

Order this documentMOTOROLAby 2N3055A/DSEMICONDUCTOR TECHNICAL DATANPNComplementary Silicon2N3055AHigh-Power Transistors*MJ15015. . . PowerBase complementary transistors designed for high power audio, steppingmotor and other linear applications. These devices can also be used in powerswitching circuits such as relay or solenoid drivers, dctodc converters, inverters

Order this documentMOTOROLAby MJ15011/DSEMICONDUCTOR TECHNICAL DATANPNMJ15011*Advance InformationPNPMJ15012*Complementary Silicon PowerTransistors*Motorola Preferred DeviceThe MJ15011 and MJ15012 are PowerBase power transistors designed for10 AMPEREhighpower audio, disk head positioners, and other linear applications. These devicesCOMPLEMENTARYcan also be used

Order this documentMOTOROLAby MJ15018/DSEMICONDUCTOR TECHNICAL DATAMJ15015, MJ15016(See 2N3055A)NPNAdvance InformationMJ15018Complementary Silicon PowerMJ15020*TransistorsPNP. . . designed for use as high frequency drivers in Audio Amplifiers.MJ15019 High Gain Complementary Silicon Power Transistors Safe Operating Area 100% TestedMJ15021*50 V, 3.0 A, 1.

2N3055A (NPN),MJ15015 (NPN),MJ15016 (PNP)MJ15015 and MJ15016 are Preferred DevicesComplementary SiliconHigh-Power Transistorshttp://onsemi.comThese PowerBaset complementary transistors are designed forhigh power audio, stepping motor and other linear applications. These15 AMPEREdevices can also be used in power switching circuits such as relay orsolenoid drivers, dc-to-dc

2N3055AG (NPN),MJ15015G (NPN),MJ15016G (PNP)Complementary SiliconHigh-Power Transistorshttp://onsemi.comThese PowerBase complementary transistors are designed for highpower audio, stepping motor and other linear applications. These15 AMPEREdevices can also be used in power switching circuits such as relay orCOMPLEMENTARY SILICONsolenoid drivers, dc-to-dc converters, invert

2N3055A (NPN),MJ15015 (NPN),MJ15016 (PNP)MJ15015 and MJ15016 are Preferred DevicesComplementary SiliconHigh-Power Transistorshttp://onsemi.comThese PowerBaset complementary transistors are designed forhigh power audio, stepping motor and other linear applications. These15 AMPEREdevices can also be used in power switching circuits such as relay orsolenoid drivers, dc-to-dc

2N3055A (NPN),MJ15015 (NPN),MJ15016 (PNP)MJ15015 and MJ15016 are Preferred DevicesComplementary SiliconHigh-Power Transistorshttp://onsemi.comThese PowerBaset complementary transistors are designed forhigh power audio, stepping motor and other linear applications. These15 AMPEREdevices can also be used in power switching circuits such as relay orsolenoid drivers, dc-to-dc

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SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor MJ15016DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h = 20-70@I = -4A,V = -4VFE C CECollector-Emitter Saturation Voltage-: V )= -1.1 V(Max)@ I = -4ACE(sat CComplement to the NPN MJ15015APPLICATIONSDesigned for high power audio, stepping motor and otherlinear applications, and can als

isc Silicon PNP Power Transistor MJ15016DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h = 20-70@I = -4A,V = -4VFE C CECollector-Emitter Saturation Voltage-: V )= -1.1 V(Max)@ I = -4ACE(sat CComplement to the NPN MJ15015Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, step

isc Silicon NPN Power Transistor MJ15011DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h = 20(Min.)@I = 2AFE CCollector-Emitter Saturation Voltage-: V )= 2.5V(Max)@ I = 4ACE(sat CComplement to the PNP MJ15012Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, disk head positi

isc Silicon NPN Power Transistor MJ15015DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h = 20-70@I = 4A,V = 4VFE C CECollector-Emitter Saturation Voltage-: V )= 1.1 V(Max)@ I = 4ACE(sat CComplement to the PNP MJ15016Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, stepping