MJ15015 - параметры, поиск аналогов, даташиты транзистора

Биполярный транзистор MJ15015 - описание производителя. Основные параметры. Даташиты.

   Наименование производителя: MJ15015
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 180 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 200 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 120 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
   Макcимальный постоянный ток коллектора (Ic): 15 A
   Предельная температура PN-перехода (Tj): 200 °C
   Граничная частота коэффициента передачи тока (ft): 0.8 MHz
   Ёмкость коллекторного перехода (Cc): 600 pf
   Статический коэффициент передачи тока (hfe): 20
   Корпус транзистора: TO204AA

Аналоги (замена) для MJ15015

MJ15015 Datasheet (PDF)

..1. Size:235K motorola
2n3055a mj2955a mj15015 mj15016.pdf

Order this documentMOTOROLAby 2N3055A/DSEMICONDUCTOR TECHNICAL DATANPNComplementary Silicon2N3055AHigh-Power Transistors*MJ15015. . . PowerBase complementary transistors designed for high power audio, steppingmotor and other linear applications. These devices can also be used in powerswitching circuits such as relay or solenoid drivers, dctodc converters, inverters

..2. Size:89K onsemi
2n3055a mj15015 mj15016.pdf

2N3055A (NPN),MJ15015 (NPN),MJ15016 (PNP)MJ15015 and MJ15016 are Preferred DevicesComplementary SiliconHigh-Power Transistorshttp://onsemi.comThese PowerBaset complementary transistors are designed forhigh power audio, stepping motor and other linear applications. These15 AMPEREdevices can also be used in power switching circuits such as relay orsolenoid drivers, dc-to-dc

..3. Size:208K inchange semiconductor
mj15015.pdf

isc Silicon NPN Power Transistor MJ15015DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h = 20-70@I = 4A,V = 4VFE C CECollector-Emitter Saturation Voltage-: V )= 1.1 V(Max)@ I = 4ACE(sat CComplement to the PNP MJ15016Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, stepping

0.1. Size:181K onsemi
2n3055ag mj15015g mj15016g.pdf

2N3055AG (NPN),MJ15015G (NPN),MJ15016G (PNP)Complementary SiliconHigh-Power Transistorshttp://onsemi.comThese PowerBase complementary transistors are designed for highpower audio, stepping motor and other linear applications. These15 AMPEREdevices can also be used in power switching circuits such as relay orCOMPLEMENTARY SILICONsolenoid drivers, dc-to-dc converters, invert

0.2. Size:89K onsemi
mj15015g.pdf