Справочник транзисторов. MJ16006A

 

Биполярный транзистор MJ16006A - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MJ16006A
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 150 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 1000 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 500 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 8 A
   Предельная температура PN-перехода (Tj): 200 °C
   Ёмкость коллекторного перехода (Cc): 350 pf
   Статический коэффициент передачи тока (hfe): 5
   Корпус транзистора: TO3

 Аналоги (замена) для MJ16006A

 

 

MJ16006A Datasheet (PDF)

 7.1. Size:206K  inchange semiconductor
mj16006.pdf

MJ16006A
MJ16006A

isc Silicon NPN Power Transistor MJ16006DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for lin

 8.1. Size:207K  inchange semiconductor
mj16004.pdf

MJ16006A
MJ16006A

isc Silicon NPN Power Transistor MJ16004DESCRIPTIONFast turn-off timesOperating temperature range -65~200100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsInvertersSolenoid and relay driversMotor controlsDeflection circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

 8.2. Size:207K  inchange semiconductor
mj16008.pdf

MJ16006A
MJ16006A

isc Silicon NPN Power Transistor MJ16008DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for lin

 8.3. Size:261K  inchange semiconductor
mj16002a.pdf

MJ16006A
MJ16006A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ16002A DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 500V(Min) High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line-operated switchmode applica

 8.4. Size:206K  inchange semiconductor
mj16002.pdf

MJ16006A
MJ16006A

isc Silicon NPN Power Transistor MJ16002DESCRIPTIONFast turn-off timesOperating temperature range -65~200100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsInvertersSolenoid and relay driversMotor controlsDeflection circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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