All Transistors. MJ16006A Datasheet

 

MJ16006A Datasheet and Replacement


   Type Designator: MJ16006A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 1000 V
   Maximum Collector-Emitter Voltage |Vce|: 500 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Collector Capacitance (Cc): 350 pF
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: TO3
 

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MJ16006A Datasheet (PDF)

 7.1. Size:206K  inchange semiconductor
mj16006.pdf pdf_icon

MJ16006A

isc Silicon NPN Power Transistor MJ16006DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for lin

 8.1. Size:207K  inchange semiconductor
mj16004.pdf pdf_icon

MJ16006A

isc Silicon NPN Power Transistor MJ16004DESCRIPTIONFast turn-off timesOperating temperature range -65~200100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsInvertersSolenoid and relay driversMotor controlsDeflection circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

 8.2. Size:207K  inchange semiconductor
mj16008.pdf pdf_icon

MJ16006A

isc Silicon NPN Power Transistor MJ16008DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for lin

 8.3. Size:261K  inchange semiconductor
mj16002a.pdf pdf_icon

MJ16006A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ16002A DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 500V(Min) High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line-operated switchmode applica

Datasheet: MJ15025 , MJ15026 , MJ15027 , MJ150BK100 , MJ16002 , MJ16002A , MJ16004 , MJ16006 , D882 , MJ16008 , MJ16010 , MJ16010A , MJ16012 , MJ16014 , MJ16016 , MJ16018 , MJ16020 .

History: MJ16002

Keywords - MJ16006A transistor datasheet

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