MJ9000 - аналоги, параметры транзистора - Справочник транзисторов

MJ9000 даташит

9.1. Size:207K comset
mj900-mj901-mj1000-mj1001-1.pdf pdf_icon

COMSET SEMICONDUCTORS SEMICONDUCTORS MJ900 MJ901 PNP MJ1000 MJ1001 NPN COMPLEMENTARY POWER DARLINGTONS The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. PNP types are the MJ900 and MJ901, and their compl

9.2. Size:170K comset
mj900-mj901-mj1000-mj1001.pdf pdf_icon

MJ900 MJ901 PNP MJ1000 MJ1001 NPN COMPLEMENTARY POWER DARLINGTONS The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. PNP types are the MJ900 and MJ901, and their complementary NPN types are the MJ10

9.3. Size:207K inchange semiconductor
mj900.pdf pdf_icon

isc Silicon PNP Darlington Power Transistor MJ900 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min.) (BR)CEO High DC Current Gain- h = 1000(Min.)@I = -3A FE C Low Collector Saturation Voltage- V = -2.0V(Max.)@ I = -3A CE (sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as output de

Другие транзисторы... MJ8400 , MJ8500 , MJ8501 , MJ8502 , MJ8503 , MJ8504 , MJ8505 , MJ900 , NJW0281G , MJ901 , MJ920 , MJ921 , MJD112 , MJD112-1 , MJD112T4 , MJD117 , MJD117-1 .