MJ9000 Specs and Replacement
Type Designator: MJ9000
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 325 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 4
Package: TO3
MJ9000 Substitution
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MJ9000 datasheet
mj900-mj901-mj1000-mj1001-1.pdf ![]()
COMSET SEMICONDUCTORS SEMICONDUCTORS MJ900 MJ901 PNP MJ1000 MJ1001 NPN COMPLEMENTARY POWER DARLINGTONS The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. PNP types are the MJ900 and MJ901, and their compl... See More ⇒
MJ900 MJ901 PNP MJ1000 MJ1001 NPN COMPLEMENTARY POWER DARLINGTONS The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. PNP types are the MJ900 and MJ901, and their complementary NPN types are the MJ10... See More ⇒
isc Silicon PNP Darlington Power Transistor MJ900 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min.) (BR)CEO High DC Current Gain- h = 1000(Min.)@I = -3A FE C Low Collector Saturation Voltage- V = -2.0V(Max.)@ I = -3A CE (sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as output de... See More ⇒
Detailed specifications: MJ8400 , MJ8500 , MJ8501 , MJ8502 , MJ8503 , MJ8504 , MJ8505 , MJ900 , NJW0281G , MJ901 , MJ920 , MJ921 , MJD112 , MJD112-1 , MJD112T4 , MJD117 , MJD117-1 .
Keywords - MJ9000 pdf specs
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