MJD2955 - параметры, поиск аналогов, даташиты транзистора

Биполярный транзистор MJD2955 - описание производителя. Основные параметры. Даташиты.

   Наименование производителя: MJD2955
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 20 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 70 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 10 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 2 MHz
   Статический коэффициент передачи тока (hfe): 20
   Корпус транзистора: TO251

Аналоги (замена) для MJD2955

MJD2955 Datasheet (PDF)

..1. Size:188K st
mjd2955 mjd3055.pdf

MJD2955MJD3055COMPLEMENTARY POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPES SURFACE-MOUNTING TO-252 (DPAK)POWER PACKAGE IN TAPE & REEL(SUFFIX "T4") ELECTRICALLY SIMILAR TO MJE2955TAND MJE3055T3APPLICATIONS 1 GENERAL PURPOSE SWITCHING ANDAMPLIFIERDPAKDESCRIPTION TO-252The MJD2955 and MJD3055 form(Suffix "T4")complementary PNP-NPN pairs. They a

..2. Size:43K fairchild semi
mjd2955.pdf

MJD2955General Purpose AmplifierLow Speed Switching Applications D-PAK for Surface Mount Applications Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, -I Suffix)D-PAK I-PAK11 Electrically Similar to Popular MJE2955T1.Base 2.Collector 3.Emitter DC Current Gain Specified to 10A High Current Gain - Bandwidth Product: fT = 2

..3. Size:132K onsemi
mjd2955 mjd3055.pdf

MJD2955 (PNP),MJD3055 (NPN)Complementary PowerTransistorsDPAK for Surface Mount Applicationshttp://onsemi.comDesigned for general purpose amplifier and low speed switchingapplications.SILICONFeatures POWER TRANSISTORS10 AMPERES Lead Formed for Surface Mount Applications in Plastic Sleeves(No Suffix)60 VOLTS, 20 WATTS Straight Lead Version in Plastic Sleeves (

..4. Size:162K onsemi
mjd2955.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

..5. Size:1647K jiangsu
mjd2955.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate TransistorsMJD2955 TRANSISTOR (PNP) TO-252-2L FEATURES Designed for General Purpose Amplifier and Low Speed Switching Applications 1.BASE Electrically Simiar to MJD3055 22.COLLECTOR DC Current Gain Specified to10 Amperes 133.EMITTER Equivalent Circuit MJD2955=Device code

..6. Size:173K lge
mjd2955.pdf

MJD2955(PNP)TO-251/TO-252-2L TransistorTO-2511.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Designed for general purpose amplifier and low speed Switching applications . Electrically simiar to MJD3055. DC current gain specified to10 Amperes TO-252-2LMAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -70 V V

..7. Size:182K wietron
mjd2955.pdf

MJD2955PNP PLASTIC ENCAPSULATE TRANSISTORSP bP b Lead(Pb)-FreeFeatures:1.BASE1.BASE33* Designed for General Purpose Amplifier and Low Speed 2.COLLECTOR2.COLLECTOR223.EMITTER 13.EMITTER 1 Switching Applications* DC Current Gain Specified to 10 AmperesD-PAK(TO-252)D-PAK(TO-252)MAXIMUM RATINGS (TA=25C unless otherwise noted)Symbol ValueParameter UnitCo

0.1. Size:202K motorola
mjd2955r mjd3055.pdf

Order this documentMOTOROLAby MJD2955/DSEMICONDUCTOR TECHNICAL DATANPNMJD2955Complementary PowerPNPMJD3055TransistorsDPAK For Surface Mount ApplicationsDesigned for general purpose amplifier and low speed switching applications.SILICON Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)POWER TRANSISTORS Straight Lead Version in Plastic S

0.2. Size:334K mcc
mmjd2955.pdf

MCCMicro Commercial ComponentsTM MMJD295520736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Silicon Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates PNP epitaxial planer RoHS Compliant. See ordering information) Capable of 1.25Watts of Power Dissipation.Transistors Collector-cu

0.3. Size:174K onsemi
mjd2955t4g.pdf

MJD2955,NJVMJD2955T4G (PNP)MJD3055,NJVMJD3055T4G (NPN)Complementary Powerhttp://onsemi.comTransistorsDPAK For Surface Mount ApplicationsSILICONPOWER TRANSISTORSDesigned for general purpose amplifier and low speed switching10 AMPERESapplications.60 VOLTS, 20 WATTSFeatures Lead Formed for Surface Mount Applications in Plastic Sleeves(No Suffix) Straight Lea

0.4. Size:174K onsemi
mjd2955-1g.pdf