MJD2955 Specs and Replacement
Type Designator: MJD2955
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO251
- BJT ⓘ Cross-Reference Search
MJD2955 datasheet
..1. Size:188K st
mjd2955 mjd3055.pdf 
MJD2955 MJD3055 COMPLEMENTARY POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICALLY SIMILAR TO MJE2955T AND MJE3055T 3 APPLICATIONS 1 GENERAL PURPOSE SWITCHING AND AMPLIFIER DPAK DESCRIPTION TO-252 The MJD2955 and MJD3055 form (Suffix "T4") complementary PNP-NPN pairs. They a... See More ⇒
..2. Size:43K fairchild semi
mjd2955.pdf
MJD2955 General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, -I Suffix) D-PAK I-PAK 11 Electrically Similar to Popular MJE2955T 1.Base 2.Collector 3.Emitter DC Current Gain Specified to 10A High Current Gain - Bandwidth Product fT = 2... See More ⇒
..4. Size:162K onsemi
mjd2955.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
..5. Size:1647K jiangsu
mjd2955.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors MJD2955 TRANSISTOR (PNP) TO-252-2L FEATURES Designed for General Purpose Amplifier and Low Speed Switching Applications 1.BASE Electrically Simiar to MJD3055 2 2.COLLECTOR DC Current Gain Specified to10 Amperes 1 3 3.EMITTER Equivalent Circuit MJD2955=Device code ... See More ⇒
..6. Size:173K lge
mjd2955.pdf
MJD2955(PNP) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Designed for general purpose amplifier and low speed Switching applications . Electrically simiar to MJD3055. DC current gain specified to10 Amperes TO-252-2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -70 V V... See More ⇒
..7. Size:182K wietron
mjd2955.pdf
MJD2955 PNP PLASTIC ENCAPSULATE TRANSISTORS P b P b Lead(Pb)-Free Features 1.BASE 1.BASE 3 3 * Designed for General Purpose Amplifier and Low Speed 2.COLLECTOR 2.COLLECTOR 2 2 3.EMITTER 1 3.EMITTER 1 Switching Applications * DC Current Gain Specified to 10 Amperes D-PAK(TO-252) D-PAK(TO-252) MAXIMUM RATINGS (TA=25 C unless otherwise noted) Symbol Value Parameter Unit Co... See More ⇒
0.1. Size:202K motorola
mjd2955r mjd3055.pdf
Order this document MOTOROLA by MJD2955/D SEMICONDUCTOR TECHNICAL DATA NPN MJD2955 Complementary Power PNP MJD3055 Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. SILICON Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) POWER TRANSISTORS Straight Lead Version in Plastic S... See More ⇒
0.2. Size:334K mcc
mmjd2955.pdf
MCC Micro Commercial Components TM MMJD2955 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Silicon Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates PNP epitaxial planer RoHS Compliant. See ordering information) Capable of 1.25Watts of Power Dissipation. Transistors Collector-cu... See More ⇒
0.3. Size:174K onsemi
mjd2955t4g.pdf
MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN) Complementary Power http //onsemi.com Transistors DPAK For Surface Mount Applications SILICON POWER TRANSISTORS Designed for general purpose amplifier and low speed switching 10 AMPERES applications. 60 VOLTS, 20 WATTS Features Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lea... See More ⇒
0.4. Size:174K onsemi
mjd2955-1g.pdf
MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN) Complementary Power http //onsemi.com Transistors DPAK For Surface Mount Applications SILICON POWER TRANSISTORS Designed for general purpose amplifier and low speed switching 10 AMPERES applications. 60 VOLTS, 20 WATTS Features Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lea... See More ⇒
0.6. Size:174K onsemi
mjd2955g.pdf
MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN) Complementary Power http //onsemi.com Transistors DPAK For Surface Mount Applications SILICON POWER TRANSISTORS Designed for general purpose amplifier and low speed switching 10 AMPERES applications. 60 VOLTS, 20 WATTS Features Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lea... See More ⇒
Detailed specifications: MJD200, MJD200-1, MJD210, MJD210-1, MJD210T4, MJD243, MJD243-1, MJD243T4, BD333, MJD2955-1, MJD2955T4, MJD3055, MJD3055-1, MJD3055T4, MJD31, MJD31-1, MJD31C
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