MJD31C-1. Аналоги и основные параметры
Наименование производителя: MJD31C-1
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 3 MHz
Статический коэффициент передачи тока (hFE): 25
Корпус транзистора: TO252
Аналоги (замена) для MJD31C-1
- подборⓘ биполярного транзистора по параметрам
MJD31C-1 даташит
8.1. Size:383K st
mjd31c.pdf 
MJD31C Low voltage NPN power transistor Datasheet - production data Features Surface-mounting TO-252 power package in tape and reel TAB Complementary to the PNP type MJD32C 3 Application 1 General purpose linear and switching equipment DPAK TO-252 Description The device is manufactured in planar technology with base island layout. The resulting transistor Fig
8.2. Size:401K st
mjd31ct4-a.pdf 
MJD31CT4-A Low voltage NPN power transistor Datasheet - production data Features This device is qualified for automotive application TAB Surface-mounting TO-252 power package in tape and reel 3 Complementary to the PNP type MJD32C 1 Application DPAK General purpose linear and switching TO-252 equipment Description Figure 1. Internal schematic diagram The dev
8.3. Size:49K fairchild semi
mjd31c.pdf 
MJD31/31C General Purpose Amplifier Low Speed Switching Applications Load Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, - I Suffix) Electrically Similar to Popular TIP31 and TIP31C D-PAK I-PAK 11 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Uni
8.4. Size:225K nxp
mjd31c.pdf 
MJD31C 100 V, 3 A NPN high power bipolar transistor 12 September 2019 Product data sheet 1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement MJD32C 2. Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Electric
8.5. Size:226K nxp
mjd31ca.pdf 
MJD31CA 100 V, 3 A NPN high power bipolar transistor 12 September 2019 Product data sheet 1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement MJD32CA 2. Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Electr
8.6. Size:367K diodes
mjd31c.pdf 
MJD31C 100V NPN HIGH VOLTAGE TRANSISTOR IN TO252 Features Mechanical Data BVCEO > 100V Case TO252 (DPAK) IC = 3A high Continuous Collector Current Case Material Molded Plastic, "Green" Molding Compound ICM = 5A Peak Pulse Current UL Flammability Classification Rating 94V-0 Ideal for Power Switching or Amplification Applications Moisture Sensitivity Lev
8.7. Size:305K diodes
mjd31cq.pdf 
MJD31CQ 100V NPN HIGH VOLTAGE TRANSISTOR IN TO252 Description Mechanical Data Case TO252 (DPAK) This Bipolar Junction Transistor (BJT) has been designed to meet the Case Material Molded Plastic, "Green" Molding Compound stringent requirements of Automotive Applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity Level 1 per J-STD-020 Ter
8.8. Size:176K onsemi
mjd31ct4g.pdf 
MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) http //onsemi.com Complementary Power SILICON POWER TRANSISTORS Transistors 3 AMPERES DPAK For Surface Mount Applications 40 AND 100 VOLTS 15 WATTS Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount Appl
8.10. Size:176K onsemi
mjd31c1g.pdf 
MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) http //onsemi.com Complementary Power SILICON POWER TRANSISTORS Transistors 3 AMPERES DPAK For Surface Mount Applications 40 AND 100 VOLTS 15 WATTS Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount Appl
8.11. Size:176K onsemi
mjd31crlg.pdf 
MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) http //onsemi.com Complementary Power SILICON POWER TRANSISTORS Transistors 3 AMPERES DPAK For Surface Mount Applications 40 AND 100 VOLTS 15 WATTS Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount Appl
8.12. Size:132K onsemi
njvmjd31ct4g-vf01 njvmjd32ct4g-vf01.pdf 
NJVMJD3xxT4G-VF01 Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching www.onsemi.com applications. Features SILICON Lead Formed for Surface Mount Applications in Plastic Sleeves POWER TRANSISTORS Straight Lead Version in Plastic Sleeves ( 1 Suffix) 3 AMPERES Lead Formed Version in 16 mm
8.13. Size:176K onsemi
mjd31cg.pdf 
MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) http //onsemi.com Complementary Power SILICON POWER TRANSISTORS Transistors 3 AMPERES DPAK For Surface Mount Applications 40 AND 100 VOLTS 15 WATTS Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount Appl
8.14. Size:72K secos
mjd31c.pdf 
MJD31C 3A , 100V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES D-Pack (TO-252) Designed for general Excellent DC Current Gain Characteristics A PACKAGE INFORMATION C B D Package MPQ Leader Size TO-252 2.5K 13 inch G E K H F N O P M J Collector 2 Millimete
8.15. Size:2786K jiangsu
mjd31c.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors TO-252-2L MJD31C TRANSISTOR (NPN) FEA TURES 1.BASE Designed for General Purpose Amplifier and Low Speed Switching Applications. Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) 2.COLLECTOR Straight Lead Version in Plastic Sleeves ( 1 Suffix)
8.16. Size:242K lge
mjd31c.pdf 
MJD31C(NPN) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Designed for general purpose amplifier and low speed switching applications. Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves ( 1 Suffix) Lead Formed Version in 16 mm Tape and Reel ( T4 Suffix) TO-25
8.18. Size:250K inchange semiconductor
mjd31c.pdf 
isc Silicon NPN Power Transistors MJD31C DESCRIPTION DC Current Gain -h = 25(Min)@ I = 1A FE C Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR) CEO Complement to Type MJD32C DPAK for Surface Mount Applications Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and low spee
Другие транзисторы: MJD2955-1, MJD2955T4, MJD3055, MJD3055-1, MJD3055T4, MJD31, MJD31-1, MJD31C, 2N5551, MJD31CT4, MJD31T4, MJD32, MJD32-1, MJD32C, MJD32C-1, MJD32CT4, MJD32T4
