All Transistors. MJD31C-1 Datasheet

 

MJD31C-1 Datasheet, Equivalent, Cross Reference Search

Type Designator: MJD31C-1

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 15 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO252

MJD31C-1 Transistor Equivalent Substitute - Cross-Reference Search

 

MJD31C-1 Datasheet (PDF)

4.1. mjd31ct4-a.pdf Size:260K _st

MJD31C-1
MJD31C-1

MJD31CT4-A Low voltage NPN power transistor Features This device is qualified for automotive application TAB Surface-mounting TO-252 power package in tape and reel 3 Complementary to the PNP type MJD32C 1 Application DPAK General purpose linear and switching TO-252 equipment Description Figure 1. Internal schematic diagram The device is manufactured in planar technology

4.2. mjd31c.pdf Size:260K _st

MJD31C-1
MJD31C-1

MJD31C Low voltage NPN power transistor Features Surface-mounting TO-252 power package in tape and reel TAB Complementary to the PNP type MJD32C 3 Application 1 General purpose linear and switching equipment DPAK TO-252 Description The device is manufactured in planar technology with base island layout. The resulting transistor Figure 1. Internal schematic diagram shows

4.3. mjd31c.pdf Size:49K _fairchild_semi

MJD31C-1
MJD31C-1

MJD31/31C General Purpose Amplifier Low Speed Switching Applications Load Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, - I Suffix) Electrically Similar to Popular TIP31 and TIP31C D-PAK I-PAK 11 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Coll

4.4. mjd31c.pdf Size:120K _diodes

MJD31C-1
MJD31C-1

MJD31C NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: DPAK High Collector-EmitterVoltage Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Ideally Suited for Automated Assembly Processes Ideal for Power Switching or Amplification Applications Moisture Sensitivity: Level 1 per

4.5. mjd31c.pdf Size:72K _secos

MJD31C-1

MJD31C 3A , 100V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES D-Pack (TO-252) Designed for general Excellent DC Current Gain Characteristics A PACKAGE INFORMATION C B D Package MPQ Leader Size TO-252 2.5K 13 inch G E K H F N O P M J Collector 2 Millimeter M

4.6. mjd31c.pdf Size:242K _lge

MJD31C-1
MJD31C-1

MJD31C(NPN) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Designed for general purpose amplifier and low speed switching applications. Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves (“–1” Suffix) Lead Formed Version in 16 mm Tape and Reel (“T4” Su

4.7. mjd31c.pdf Size:231K _first_silicon

MJD31C-1
MJD31C-1

SEMICONDUCTOR MJD31C TECHNICAL DATA MJD31C TRANSISTOR (NPN) A I C J FEA TURES Designed for General Purpose Amplifier and DIM MILLIMETERS A 6 50 ± 0 2 Low Speed Switching Applications. B 5 60 ± 0 2 C 5 20 ± 0 2 Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) D 1 50 ± 0 2 Straight Lead Version in Plastic Sleeves (“–1” Suffix) E 2 70

Datasheet: MJD2955-1 , MJD2955T4 , MJD3055 , MJD3055-1 , MJD3055T4 , MJD31 , MJD31-1 , MJD31C , 8050 , MJD31CT4 , MJD31T4 , MJD32 , MJD32-1 , MJD32C , MJD32C-1 , MJD32CT4 , MJD32T4 .

 


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