MJD32C-1. Аналоги и основные параметры
Наименование производителя: MJD32C-1
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 3 MHz
Статический коэффициент передачи тока (hFE): 25
Корпус транзистора: TO252
Аналоги (замена) для MJD32C-1
- подборⓘ биполярного транзистора по параметрам
MJD32C-1 даташит
8.1. Size:391K st
mjd32c.pdf 
MJD32C Low voltage PNP power transistor Datasheet - production data Features Surface-mounting TO-252 power package in TAB tape and reel Complementary to the NPN type MJD31C 3 Application 1 General purpose linear and switching equipment DPAK TO-252 Description The device is manufactured in planar technology with base island layout. The resulting transistor
8.2. Size:360K st
mjd32ct4-a.pdf 
MJD32CT4-A Automotive-grade low voltage PNP power transistor Datasheet - production data Features AEC-Q101 qualified Surface-mounting TO-252 power package in tape and reel TAB Complementary to the NPN type MJD31CT4-A 3 Applications 1 General purpose linear and switching DPAK equipment Description The device is manufactured in planar technology Figure 1. Inte
8.3. Size:49K fairchild semi
mjd32c.pdf 
MJD32/32C General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications Load Formed for Surface Mount Application (No Suffix) D-PAK I-PAK Straight Lead (I-PAK, - I Suffix) 11 Electrically Similar to Popular TIP32 and TIP32C 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherw
8.4. Size:225K nxp
mjd32c.pdf 
MJD32C 100 V, 3 A PNP high power bipolar transistor 30 September 2019 Product data sheet 1. General description PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement MJD31C 2. Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Electric
8.5. Size:367K diodes
mjd32c.pdf 
MJD32C 100V PNP HIGH VOLTAGE TRANSISTOR IN TO252 Features Mechanical Data BVCEO > -100V Case TO252 (DPAK) IC = -3A high Continuous Collector Current Case Material Molded Plastic, "Green" Molding Compound UL Flammability Classification Rating 94V-0 ICM = -5A Peak Pulse Current Moisture Sensitivity Level 1 per J-STD-020 Ideal for Power Switching or A
8.6. Size:417K diodes
mjd32cq.pdf 
NOT RECOMMENDED FOR NEW DESIGN USE MJD32CUQ MJD32CQ 100V PNP HIGH VOLTAGE TRANSISTOR IN TO252 Description Mechanical Data Case TO252 (DPAK) This Bipolar Junction Transistor (BJT) is designed to meet the Case Material Molded Plastic, "Green" Molding Compound stringent requirements of Automotive Applications. UL Flammability Classification Rating 94V-0 Moisture
8.7. Size:176K onsemi
mjd32ct4g.pdf 
MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) http //onsemi.com Complementary Power SILICON POWER TRANSISTORS Transistors 3 AMPERES DPAK For Surface Mount Applications 40 AND 100 VOLTS 15 WATTS Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount Appl
8.9. Size:176K onsemi
mjd32cg.pdf 
MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) http //onsemi.com Complementary Power SILICON POWER TRANSISTORS Transistors 3 AMPERES DPAK For Surface Mount Applications 40 AND 100 VOLTS 15 WATTS Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount Appl
8.10. Size:176K onsemi
mjd32crlg.pdf 
MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) http //onsemi.com Complementary Power SILICON POWER TRANSISTORS Transistors 3 AMPERES DPAK For Surface Mount Applications 40 AND 100 VOLTS 15 WATTS Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount Appl
8.11. Size:132K onsemi
njvmjd31ct4g-vf01 njvmjd32ct4g-vf01.pdf 
NJVMJD3xxT4G-VF01 Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching www.onsemi.com applications. Features SILICON Lead Formed for Surface Mount Applications in Plastic Sleeves POWER TRANSISTORS Straight Lead Version in Plastic Sleeves ( 1 Suffix) 3 AMPERES Lead Formed Version in 16 mm
8.12. Size:2198K jiangsu
mjd32c.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors TO-252-2L MJD32C TRANSISTOR (PNP) FEATURES 1.BASE Designed for General Purpose Amplifier and Low Speed Switching Applications Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) 2.COLLECTOR Straight Lead Version in Plastic Sleeves ( 1 Suffix)
8.13. Size:233K lge
mjd32c.pdf 
MJD32C(PNP) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Designed for general purpose amplifier and low speed switching applications. Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves ( 1 Suffix) TO-252-2L Lead Formed Version in 16 mm Tape and Reel ( T4 Suffix)
8.14. Size:1175K first silicon
mjd32c.pdf 
SEMICONDUCTOR MJD32C TECHNICAL DATA MJD32C TRANSISTOR (PNP) A I C J FEATURES Designed for General Purpose Amplifier and Low Speed Switching Applications DIM MILLIMETERS Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) A 6 50 0 2 B 5 60 0 2 Straight Lead Version in Plastic Sleeves ( 1 Suffix) C 5 20 0 2 D 1 50 0 2 Lead Formed
Другие транзисторы: MJD31-1, MJD31C, MJD31C-1, MJD31CT4, MJD31T4, MJD32, MJD32-1, MJD32C, TIP41, MJD32CT4, MJD32T4, MJD340, MJD340-1, MJD340T4, MJD350, MJD350-1, MJD350T4
