MJD32C-1 Specs and Replacement

Type Designator: MJD32C-1

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 15 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO252

 MJD32C-1 Substitution

- BJT ⓘ Cross-Reference Search

 

MJD32C-1 datasheet

 8.1. Size:391K  st

mjd32c.pdf pdf_icon

MJD32C-1

MJD32C Low voltage PNP power transistor Datasheet - production data Features Surface-mounting TO-252 power package in TAB tape and reel Complementary to the NPN type MJD31C 3 Application 1 General purpose linear and switching equipment DPAK TO-252 Description The device is manufactured in planar technology with base island layout. The resulting transistor ... See More ⇒

 8.2. Size:360K  st

mjd32ct4-a.pdf pdf_icon

MJD32C-1

MJD32CT4-A Automotive-grade low voltage PNP power transistor Datasheet - production data Features AEC-Q101 qualified Surface-mounting TO-252 power package in tape and reel TAB Complementary to the NPN type MJD31CT4-A 3 Applications 1 General purpose linear and switching DPAK equipment Description The device is manufactured in planar technology Figure 1. Inte... See More ⇒

 8.3. Size:49K  fairchild semi

mjd32c.pdf pdf_icon

MJD32C-1

MJD32/32C General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications Load Formed for Surface Mount Application (No Suffix) D-PAK I-PAK Straight Lead (I-PAK, - I Suffix) 11 Electrically Similar to Popular TIP32 and TIP32C 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherw... See More ⇒

 8.4. Size:225K  nxp

mjd32c.pdf pdf_icon

MJD32C-1

MJD32C 100 V, 3 A PNP high power bipolar transistor 30 September 2019 Product data sheet 1. General description PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement MJD31C 2. Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Electric... See More ⇒

Detailed specifications: MJD31-1, MJD31C, MJD31C-1, MJD31CT4, MJD31T4, MJD32, MJD32-1, MJD32C, TIP41, MJD32CT4, MJD32T4, MJD340, MJD340-1, MJD340T4, MJD350, MJD350-1, MJD350T4

Keywords - MJD32C-1 pdf specs

 MJD32C-1 cross reference

 MJD32C-1 equivalent finder

 MJD32C-1 pdf lookup

 MJD32C-1 substitution

 MJD32C-1 replacement