MJE15028 - описание и поиск аналогов

Order this document MOTOROLA by MJE15028/D SEMICONDUCTOR TECHNICAL DATA NPN * MJE15028 Complementary Silicon Plastic MJE15030* Power Transistors PNP * MJE15029 . . . designed for use as high frequency drivers in audio amplifiers. DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) @ IC = 3.0 Adc * MJE15031 hFE = 20 (Min) @ IC = 4.0 Adc *Motorola Preferred Device

MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use as high-frequency drivers in audio amplifiers. http //onsemi.com Features 8 AMPERE High Current Gain - Bandwidth Product POWER TRANSISTORS TO-220 Compact Package COMPLEMENTARY SILICON These Devices are Pb-Free and are RoHS Compliant* 120-

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package MJE15028, MJE15030 MJE15029, MJE15031 MJE15028, 15030 NPN PLASTIC POWER TRANSISTORS MJE15029, 15031 PNP PLASTIC POWER TRANSISTORS High frequency Drivers in Audio Amplifiers PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 C DIM MIN. MAX. E B

SPTECH Product Specification SPTECH Silicon NPN Power Transistor MJE15028 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 120V(Min) CEO(SUS) High Current Gain-Bandwidth Product- f = 30MHz(Min)@ I = 0.5A T C DC current gain - h = 40 (Min) @I = 3.0 A FE C h = 20 (Min) @I = 4.0 A FE C Complement to Type MJE15029 APPLICATIONS Designed for use as high freque

isc Silicon NPN Power Transistor MJE15028 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 120V(Min) CEO(SUS) High Current Gain-Bandwidth Product- f = 30MHz(Min)@ I = 0.5A T C DC current gain - h = 40 (Min) @I = 3.0 A FE C h = 20 (Min) @I = 4.0 A FE C Complement to Type MJE15029 Minimum Lot-to-Lot variations for robust device performance and reliable operat

MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use as high-frequency drivers in audio amplifiers. http //onsemi.com Features 8 AMPERE DC Current Gain Specified to 4.0 A POWER TRANSISTORS hFE = 40 (Min) @ IC = 3.0 Adc COMPLEMENTARY SILICON = 20 (Min) @ IC = 4.0 Adc 120-150 VOLTS, 50 WATTS Coll

MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use as high-frequency drivers in audio amplifiers. http //onsemi.com Features 8 AMPERE DC Current Gain Specified to 4.0 A POWER TRANSISTORS hFE = 40 (Min) @ IC = 3.0 Adc COMPLEMENTARY SILICON = 20 (Min) @ IC = 4.0 Adc 120-150 VOLTS, 50 WATTS Coll

SPTECH Product Specification SPTECH Silicon PNP Power Transistor MJE15029 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 120V(Min) CEO(SUS) High Current Gain-Bandwidth Product- f = 30MHz(Min)@ I = -0.5A T C DC current gain - h = 40 (Min) @I = -3.0 A FE C h = 20 (Min) @I = -4.0 A FE C Complement to Type MJE15028 APPLICATIONS Designed for use as high fre

isc Silicon PNP Power Transistor MJE15029 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 120V(Min) CEO(SUS) High Current Gain-Bandwidth Product- f = 30MHz(Min)@ I = -0.5A T C DC current gain - h = 40 (Min) @I = -3.0 A FE C h = 20 (Min) @I = -4.0 A FE C Complement to Type MJE15028 Minimum Lot-to-Lot variations for robust device performance and reliable ope