Биполярный транзистор MJE16106
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: MJE16106
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 100
W
Макcимально допустимое напряжение коллектор-база (Ucb): 650
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V
Макcимальный постоянный ток коллектора (Ic): 8
A
Предельная температура PN-перехода (Tj): 150
°C
Ёмкость коллекторного перехода (Cc): 300
pf
Статический коэффициент передачи тока (hfe): 6
Корпус транзистора:
TO220
Аналоги (замена) для MJE16106
MJE16106
Datasheet (PDF)
..1. Size:380K motorola
mje16106.pdf Order this documentMOTOROLAby MJE16106/DSEMICONDUCTOR TECHNICAL DATAMJE16106Designer's Data SheetNPN Silicon Power TransistorPOWER TRANSISTORSSwitchmode Bridge Series8 AMPERES400 VOLTS. . . specifically designed for use in half bridge and full bridge off line converters.100 AND 125 WATTS Excellent Dynamic Saturation Characteristics Rugged RBSOA Capability
9.1. Size:276K motorola
mje16204.pdf Order this documentMOTOROLAby MJE16204/DSEMICONDUCTOR TECHNICAL DATADesigner's Data SheetMJE16204SCANSWITCHNPN Bipolar Power Deflection TransistorFor High and Very High Resolution MonitorsPOWER TRANSISTORSThe MJE16204 is a stateoftheart SWITCHMODE bipolar power transistor. It is6.0 AMPERESspecifically designed for use in horizontal deflection circuits f
9.2. Size:425K motorola
mje16002.pdf Order this documentMOTOROLAby MJE16002/DSEMICONDUCTOR TECHNICAL DATA*MJE16002Designer's Data Sheet*MJE16004SWITCHMODE SeriesNPN Silicon Power Transistors*Motorola Preferred DeviceThese transistors are designed for highvoltage, highspeed switching of inductive5.0 AMPEREcircuits where fall time and RBSOA are critical. They are particularly wellsuited forN
9.4. Size:195K inchange semiconductor
mje16004.pdf isc Silicon NPN Power Transistor MJE16004DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed switching ofinductive circuits where fall time and RBSOA are critical.they are particularly wel
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