MJE18006 - описание и поиск аналогов

Order this document MOTOROLA by MJE18006/D SEMICONDUCTOR TECHNICAL DATA * MJE18006 Designer's Data Sheet * MJF18006 SWITCHMODE *Motorola Preferred Device NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 6.0 AMPERES The MJE/MJF18006 have an applications specific state of the art die designed 1000 VOLTS for use in 220 V line oper

Product Specification www.jmnic.com Silicon NPN Power Transistors MJE18006 DESCRIPTION With TO-220C package High voltage ,high speed Improved efficiency due to low base drive requirements -High and flat DC current gain hFE -Fast switching APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts. PINNING PI

isc Silicon NPN Power Transistor MJE18006 DESCRIPTION Collector-Base Breakdown Voltage- V = 1000V(Min) (BR)CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET

MJE18006G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18006G has an applications specific state-of-the-art die http //onsemi.com designed for use in 220 V line-operated SWITCHMODE Power supplies and electronic light ballasts. POWER TRANSISTOR Features 6.0 AMPERES Improved Efficiency Due to Low Base Drive Requirements 1000 VOLTS - 100

Order this document MOTOROLA by MJE18009/D SEMICONDUCTOR TECHNICAL DATA MJE18009 Designer's Data Sheet MJF18009 SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTORS The MJE/MJF18009 has an application specific state of the art die designed for 10 AMPERES use in 220 V line operated Switchmode Power supplies and electronic ballast ( light 1000 VOLTS balla

Order this document MOTOROLA by MJE18008/D SEMICONDUCTOR TECHNICAL DATA * MJE18008 Designer's Data Sheet * MJF18008 SWITCHMODE *Motorola Preferred Device NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 8.0 AMPERES The MJE/MJF18008 have an applications specific state of the art die designed 1000 VOLTS for use in 220 V line oper

Order this document MOTOROLA by MJE18004/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet * MJE18004 SWITCHMODE * MJF18004 NPN Bipolar Power Transistor *Motorola Preferred Device For Switching Power Supply Applications POWER TRANSISTOR The MJE/MJF18004 have an applications specific state of the art die designed 5.0 AMPERES for use in 220 V line operated Switchmod

Order this document MOTOROLA by MJE18002/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MJE18002* SWITCHMODE MJF18002* NPN Bipolar Power Transistor *Motorola Preferred Device For Switching Power Supply Applications The MJE/MJF18002 have an applications specific state of the art die designed POWER TRANSISTOR for use in 220 V line operated Switchmode Power supplies a

DATA SHEET www.onsemi.com Switch-mode NPN Bipolar POWER TRANSISTOR Power Transistor 8.0 AMPERES 1000 VOLTS For Switching Power Supply Applications 45 and 125 WATTS COLLECTOR MJE18008 2,4 The MJE18008 have an applications specific state-of-the-art die designed for use in 220 V line-operated switch-mode Power supplies 1 and electronic light ballasts. BASE Features 3 EMITTER

MJE18004D2G High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation http //onsemi.com Network POWER TRANSISTORS The MJE18004D2 is state-of-art High Speed High gain BIPolar 5 AMPERES, transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread ( 150 ns on storage time) make it ideally suitable

MJE18004, MJF18004 Switch-mode NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18004 have an applications specific state-of-the-art die designed for use in 220 V line-operated switch-mode Power www.onsemi.com supplies and electronic light ballasts. Features POWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements 5.0 AMPERES Hi

MJE18002G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18002G have an applications specific state-of-the-art die http //onsemi.com designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. POWER TRANSISTOR Features 2.0 AMPERES Improved Efficiency Due to Low Base Drive Requirements 100 VOLTS - 50 W

MJE18008, MJF18008 Switch-mode NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008 have an applications specific state-of-the-art die designed for use in 220 V line-operated switch-mode Power www.onsemi.com supplies and electronic light ballasts. Features POWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements 8.0 AMPERES Hi

MJE18008, MJF18008 Switch-mode NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008 have an applications specific state-of-the-art die designed for use in 220 V line-operated switch-mode Power www.onsemi.com supplies and electronic light ballasts. Features POWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements 8.0 AMPERES Hi

Product Specification www.jmnic.com Silicon NPN Power Transistors MJE18008 DESCRIPTION With TO-220C package High voltage ,high speed Improved efficiency due to low base drive requirements -High and flat DC current gain hFE -Fast switching APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts. PINNING PI

isc Silicon NPN Power Transistor MJE18008 DESCRIPTION Collector-Base Breakdown Voltage- V = 1000V(Min) (BR)CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET

isc Silicon NPN Power Transistor MJE18004 DESCRIPTION Collector-Base Breakdown Voltage- V = 1000V(Min) (BR)CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET

isc Silicon NPN Power Transistor MJE18002 DESCRIPTION Collector-Base Breakdown Voltage- V = 1000V(Min) (BR)CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET