MJE18006 datasheet, аналоги, основные параметры

Наименование производителя: MJE18006  📄📄 

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 100 W

Макcимально допустимое напряжение коллектор-база (Ucb): 1000 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 450 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V

Макcимальный постоянный ток коллектора (Ic): 6 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 14 MHz

Ёмкость коллекторного перехода (Cc): 120 pf

Статический коэффициент передачи тока (hFE): 14

Корпус транзистора: TO220

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MJE18006 даташит

 ..1. Size:415K  motorola
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MJE18006

Order this document MOTOROLA by MJE18006/D SEMICONDUCTOR TECHNICAL DATA * MJE18006 Designer's Data Sheet * MJF18006 SWITCHMODE *Motorola Preferred Device NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 6.0 AMPERES The MJE/MJF18006 have an applications specific state of the art die designed 1000 VOLTS for use in 220 V line oper

 ..2. Size:95K  jmnic
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MJE18006

Product Specification www.jmnic.com Silicon NPN Power Transistors MJE18006 DESCRIPTION With TO-220C package High voltage ,high speed Improved efficiency due to low base drive requirements -High and flat DC current gain hFE -Fast switching APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts. PINNING PI

 ..3. Size:216K  inchange semiconductor
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MJE18006

isc Silicon NPN Power Transistor MJE18006 DESCRIPTION Collector-Base Breakdown Voltage- V = 1000V(Min) (BR)CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET

 0.1. Size:202K  onsemi
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MJE18006

MJE18006G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18006G has an applications specific state-of-the-art die http //onsemi.com designed for use in 220 V line-operated SWITCHMODE Power supplies and electronic light ballasts. POWER TRANSISTOR Features 6.0 AMPERES Improved Efficiency Due to Low Base Drive Requirements 1000 VOLTS - 100

Другие транзисторы: MJE1660, MJE1661, MJE170, MJE171, MJE172, MJE180, MJE18002, MJE18004, D882P, MJE18008, MJE181, MJE182, MJE1909, MJE200, MJE201, MJE2010, MJE2011