Биполярный транзистор MJE205
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: MJE205
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 65
W
Макcимально допустимое напряжение коллектор-база (Ucb): 50
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4
V
Макcимальный постоянный ток коллектора (Ic): 5
A
Предельная температура PN-перехода (Tj): 150
°C
Статический коэффициент передачи тока (hfe): 25
Корпус транзистора:
TO126
Аналоги (замена) для MJE205
MJE205
Datasheet (PDF)
9.1. Size:255K motorola
mje200re.pdf 
Order this documentMOTOROLAby MJE200/DSEMICONDUCTOR TECHNICAL DATANPNComplementary Silicon Power*MJE200Plastic TransistorsPNP. . . designed for low voltage, lowpower, highgain audio amplifier applications.*MJE210 CollectorEmitter Sustaining Voltage VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc*Motorola Preferred Device High DC Current Gain hFE = 7
9.2. Size:42K fairchild semi
mje200.pdf 
MJE200Feature Low Collector-Emitter Saturation Voltage High Current Gain Bandwidth Product : fT=65MHz @ IC=100mA (Min.) Complement to MJE210TO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V
9.3. Size:115K onsemi
mje200 mje210.pdf 
MJE200 - NPN,MJE210 - PNPPreferred Device Complementary SiliconPower Plastic TransistorsThese devices are designed for low voltage, low-power, high-gainaudio amplifier applications.http://onsemi.comFeatures5.0 AMPERES Collector-Emitter Sustaining Voltage -POWER TRANSISTORSVCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc High DC Current Gain -COMPLEMENTARY SILICONhFE
9.4. Size:164K onsemi
mje200g mje210g.pdf 
MJE200G (NPN),MJE210G (PNP)Complementary SiliconPower Plastic TransistorsThese devices are designed for low voltage, low-power, high-gainaudio amplifier applications.http://onsemi.comFeatures5.0 AMPERES High DC Current GainPOWER TRANSISTORS Low Collector-Emitter Saturation VoltageCOMPLEMENTARY SILICON High Current-Gain - Bandwidth Product Annular Construc
9.5. Size:115K onsemi
mje200g.pdf 
MJE200 - NPN,MJE210 - PNPPreferred Device Complementary SiliconPower Plastic TransistorsThese devices are designed for low voltage, low-power, high-gainaudio amplifier applications.http://onsemi.comFeatures5.0 AMPERES Collector-Emitter Sustaining Voltage -POWER TRANSISTORSVCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc High DC Current Gain -COMPLEMENTARY SILICONhFE
9.6. Size:213K inchange semiconductor
mje200.pdf 
isc Silicon NPN Power Transistor MJE200DESCRIPTIONCollectorEmitter Sustaining Voltage-: V = 25V(Min)CEO(SUS)DC Current Gain-: h = 70(Min) @ I = 500mAFE CLow Collector-Emitter Saturation Voltage-: VCE(sat)= 0.3V(Max)@ I = 500mACHigh Current-GainBandwidth ProductfT= 65MHz(Min) @ I = 100mACMinimum Lot-to-Lot variations for robust deviceperformance and
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