Биполярный транзистор MJE2490
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: MJE2490
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 60
W
Макcимально допустимое напряжение коллектор-база (Ucb): 40
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 3
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 3
MHz
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора:
TO220
Аналоги (замена) для MJE2490
MJE2490
Datasheet (PDF)
9.1. Size:235K motorola
mje243re.pdf 
Order this documentMOTOROLAby MJE243/DSEMICONDUCTOR TECHNICAL DATANPNComplementary Silicon Power*MJE243Plastic TransistorsPNP. . . designed for low power audio amplifier and lowcurrent, highspeed switching*MJE253applications. High CollectorEmitter Sustaining Voltage *Motorola Preferred DeviceVCEO(sus) = 100 Vdc (Min) MJE243, MJE253 High DC
9.2. Size:187K onsemi
mje243 mje253.pdf 
MJE243 - NPN,MJE253 - PNPComplementary SiliconPower Plastic TransistorsThese devices are designed for low power audio amplifier andlow-current, high-speed switching applications.http://onsemi.comFeatures4.0 AMPERES High Collector-Emitter Sustaining Voltage -POWER TRANSISTORSVCEO(sus) = 100 Vdc (Min) High DC Current Gain @ IC = 200 mAdcCOMPLEMENTARY SILICONhFE =
9.3. Size:183K onsemi
mje243g.pdf 
MJE243 - NPN,MJE253 - PNPComplementary SiliconPower Plastic TransistorsThese devices are designed for low power audio amplifier andlow-current, high-speed switching applications.http://onsemi.comFeatures4.0 AMPERES High Collector-Emitter Sustaining Voltage -POWER TRANSISTORSVCEO(sus) = 100 Vdc (Min) High DC Current Gain @ IC = 200 mAdcCOMPLEMENTARY SILICONhFE =
9.4. Size:157K onsemi
mje243g mje253g.pdf 
MJE243G (NPN),MJE253G (PNP)Complementary SiliconPower Plastic TransistorsThese devices are designed for low power audio amplifier andlow-current, high-speed switching applications.http://onsemi.comFeatures4.0 AMPERES High Collector-Emitter Sustaining VoltagePOWER TRANSISTORS High DC Current GainCOMPLEMENTARY SILICON Low Collector-Emitter Saturation Voltage
9.5. Size:203K cdil
mje243 mje253.pdf 
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL SILICON POWER TRANSISTOR MJE243TO-126 Plastic PackageECBComplementary MJE253Designed for Low Power Audio Amplifier and Low-Current, High-Speed Switching ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL Value UNITCollector Base Voltage VCBO 100 VCollector Emitter
9.6. Size:214K inchange semiconductor
mje243.pdf 
isc Silicon NPN Power Transistor MJE243DESCRIPTIONCollectorEmitter Sustaining Voltage-: V = 100 V(Min)CEO(SUS)DC Current Gain-: h = 40(Min) @ I = 0.2 AFE CLow Collector Saturation Voltage-: V = 0.3V(Max.)@ I = 0.5 ACE(sat) CComplement to the PNP MJE253Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigne
9.7. Size:213K inchange semiconductor
mje240.pdf 
isc Silicon NPN Power Transistor MJE240DESCRIPTIONCollectorEmitter Sustaining Voltage-: V = 80 V(Min)CEO(SUS)DC Current Gain-: h = 40(Min) @ I = 0.2 AFE CLow Collector Saturation Voltage-: V = 0.3V(Max.)@ I = 0.5 ACE(sat) CComplement to the PNP MJE250Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned
Другие транзисторы... 2SA1771
, 2SA178
, 2SA1790
, 2SA1791
, 2SA1792
, 2SA1793
, 2SA1794
, 2SA1795
, BC557
, 2SA1799
, 2SA17H
, 2SA18
, 2SA180
, 2SA1800
, 2SA1800O
, 2SA1800R
, 2SA1800Y
.
