MJE2901T datasheet и подбор замены

 ..1. Size:212K  inchange semiconductor
 mje2901t.pdf 

isc Silicon PNP Power Transistor MJE2901T DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO High DC Current Gain- h = 25-100@I = -3A FE C Complement to Type MJE2801T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as an output device in complementary audio amplifiers up to 35 watts m

 9.1. Size:129K  motorola
 mje2955t mje3055t mje2955t.pdf 

Order this document MOTOROLA by MJE2955T/D SEMICONDUCTOR TECHNICAL DATA PNP * MJE2955T Complementary Silicon Plastic NPN * MJE3055T Power Transistors . . . designed for use in general purpose amplifier and switching applications. *Motorola Preferred Device DC Current Gain Specified to 10 Amperes High Current Gain Bandwidth Product 10 AMPERE

 9.2. Size:59K  st
 mje2955t mje3055t.pdf 

MJE2955T MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary 3 2 PNP type is MJE2955T. 1 TO-220 INTERNAL SCHEMATIC DIA

 9.3. Size:37K  fairchild semi
 mje2955t.pdf 

MJE2955T General Purpose and Switching Applications DC Current Gain Specified to IC = 10 A High Current Gain Bandwidth Product fT = 2MHz (Min.) TO-220 1 1.Base 2.Collector 3.Emitter PNP Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 70 V VCEO Collector-Emitter Voltage - 60 V VEBO Emi

 9.4. Size:60K  onsemi
 mje2955t mje3055t.pdf 

MJE2955T (PNP), MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. www.onsemi.com Features 10 AMPERE High Current Gain - Bandwidth Product COMPLEMENTARY SILICON These Devices are Pb-Free and are RoHS Compliant* POWER TRANSISTORS 60 VOLTS - 75 WATTS MAXIMUM RATINGS Rating

 9.5. Size:135K  onsemi
 mje2955tg.pdf 

MJE2955T (PNP) MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. http //onsemi.com Features 10 AMPERE DC Current Gain Specified to 10 A COMPLEMENTARY SILICON High Current Gain - Bandwidth Product - POWER TRANSISTORS fT = 2.0 MHz (Min) @ IC 60 VOLTS - 75 WATTS = 500 mAd

 9.6. Size:186K  utc
 mje2955t.pdf 

UNISONIC TECHNOLOGIES CO., LTD MJE2955T PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION 1 1 The UTC MJE2955T is designed for general purpose of amplifier TO-220F1 TO-220 and switching applications. 1 1 TO-252 TO-251 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MJE2955TL-TA3-T MJE2955TG-TA3-T TO-22

 9.7. Size:10K  utc
 mje2955.pdf 

UTC MJE2955T PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE2955T is designed for general purpose of amplifier and switching applications. 1 TO-220 1 BASE 2 COLLECTOR 3 EMITTER ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified ) PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO 70 V Collector-emitter v

 9.8. Size:273K  cdil
 mje2955t mje3055t.pdf 

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS MJE2955T PNP MJE3055T NPN TO-220 Plastic Package With excellent Safe Operating Area, ideal for Hi-Fi Amplifier and Switching Regulator Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT VCEO Collector Emitter Voltage 60 V Collector Base Voltage VCB

 9.9. Size:1419K  jiangsu
 mje2955.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors TO-220-3L MJE2955 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOTR 3. EMITTER General Purpose and Switching Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emi

 9.10. Size:246K  lge
 mje2955.pdf 

MJE2955(PNP) TO-220 Transistor TO-220 1. BASE 2. COLLECTOTR 3. EMITTER 3 2 1 Features GENERAL PURPOSE AND SWITCHING APPLICATIONS. Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector C

 9.11. Size:47K  hsmc
 hmje2955t.pdf 

Spec. No. HE6736 HI-SINCERITY Issued Date 1992.12.15 Revised Date 2004.11.19 MICROELECTRONICS CORP. Page No. 1/5 HMJE2955T PNP EPITAXIAL PLANAR TRANSISTOR Description The HMJE2955T is designed for general purpose of amplifier and switching applications. TO-220 Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature .................................

 9.12. Size:165K  nell
 mje2955a.pdf 

MJE3055A(NPN) RoHS MJE2955A(PNP) SEMICONDUCTOR RoHS Nell High Power Products Complementary Silicon power transistors (10A / 60V / 75W) FEATURES Designed for general-purpose switching and amplifier applications. DC current gain specified to 10A High current gain-Band width product fT = 2 MHz (Min.) @ lC = 0.5 Adc Excellent safe operating area 1 2 3 TO-220AB DESCRIPTI

 9.13. Size:212K  inchange semiconductor
 mje2955t.pdf 

isc Silicon PNP Power Transistor MJE2955T DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO High DC Current Gain- h = 20-100@I = -4A FE C Complement to Type MJE3055T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAX