MJE2901T Datasheet and Replacement

isc Silicon PNP Power Transistor MJE2901TDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOHigh DC Current Gain-: h = 25-100@I = -3AFE CComplement to Type MJE2801TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as an output device in complementaryaudio amplifiers up to 35 watts m

Order this documentMOTOROLAby MJE2955T/DSEMICONDUCTOR TECHNICAL DATAPNP*MJE2955TComplementary Silicon PlasticNPN*MJE3055TPower Transistors. . . designed for use in generalpurpose amplifier and switching applications.*Motorola Preferred Device DC Current Gain Specified to 10 Amperes High Current Gain Bandwidth Product 10 AMPERE

MJE2955TMJE3055TCOMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon Epitaxial-Base NPNtransistor in Jedec TO-220 package. It isintended for power switching circuits andgeneral-purpose amplifiers. The complementary 32PNP type is MJE2955T.1TO-220INTERNAL SCHEMATIC DIA

MJE2955TGeneral Purpose and Switching Applications DC Current Gain Specified to IC = 10 A High Current Gain Bandwidth Product : fT = 2MHz (Min.)TO-22011.Base 2.Collector 3.EmitterPNP Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage - 70 V VCEO Collector-Emitter Voltage - 60 V VEBO Emi

MJE2955T (PNP),MJE3055T (NPN)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andswitching applications. www.onsemi.comFeatures10 AMPERE High Current Gain - Bandwidth ProductCOMPLEMENTARY SILICON These Devices are Pb-Free and are RoHS Compliant*POWER TRANSISTORS60 VOLTS - 75 WATTSMAXIMUM RATINGSRating

MJE2955T (PNP)MJE3055T (NPN)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andswitching applications. http://onsemi.comFeatures10 AMPERE DC Current Gain Specified to 10 ACOMPLEMENTARY SILICON High Current Gain - Bandwidth Product -POWER TRANSISTORSfT = 2.0 MHz (Min) @ IC 60 VOLTS - 75 WATTS= 500 mAd

UNISONIC TECHNOLOGIES CO., LTD MJE2955T PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION 11The UTC MJE2955T is designed for general purpose of amplifier TO-220F1TO-220and switching applications. 11TO-252TO-251 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MJE2955TL-TA3-T MJE2955TG-TA3-T TO-22

UTC MJE2955T PNP EPITAXIAL SILICON TRANSISTORHIGH VOLTAGE TRANSISTORDESCRIPTION The UTC MJE2955T is designed for general purposeof amplifier and switching applications.1TO-2201:BASE 2: COLLECTOR 3: EMITTERABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified )PARAMETER SYMBOL RATING UNITCollector-base voltage VCBO 70 VCollector-emitter v

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPLASTIC POWER TRANSISTORS MJE2955T PNPMJE3055T NPNTO-220Plastic PackageWith excellent Safe Operating Area, ideal for Hi-Fi Amplifier and Switching Regulator ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITVCEO Collector Emitter Voltage 60 VCollector Base Voltage VCB

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors TO-220-3L MJE2955 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOTR 3. EMITTER General Purpose and Switching ApplicationsMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emi

MJE2955(PNP) TO-220 TransistorTO-2201. BASE 2. COLLECTOTR 3. EMITTER 3 21Features GENERAL PURPOSE AND SWITCHING APPLICATIONS. Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector C

Spec. No. : HE6736HI-SINCERITYIssued Date : 1992.12.15Revised Date : 2004.11.19MICROELECTRONICS CORP.Page No. : 1/5HMJE2955TPNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HMJE2955T is designed for general purpose of amplifier and switchingapplications.TO-220Absolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperature .................................

MJE3055A(NPN)RoHS MJE2955A(PNP)SEMICONDUCTOR RoHS Nell High Power Products Complementary Silicon power transistors(10A / 60V / 75W)FEATURES Designed for general-purpose switching and amplifier applications. DC current gain specified to 10A High current gain-Band width product: fT = 2 MHz (Min.) @ lC = 0.5 AdcExcellent safe operating area 123TO-220AB DESCRIPTI

isc Silicon PNP Power Transistor MJE2955TDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOHigh DC Current Gain-: h = 20-100@I = -4AFE CComplement to Type MJE3055TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier and switchingapplications.ABSOLUTE MAX